201133701 六、發明說明·· 【發明所屬之技術領域】 本發明係關於一種具備有保持體之基板保持裝置，兮 保持體係於例如半導體晶圓等之被處理基板之搬運時等了 用於進行保持。 【先前技術】 在用於半導體元件或電子製品等之製造之裝置中，係 具備有將被處理基板進行各種加工處理之複數個製程腔室 (process chamber)、及將被處理基板對於製程 出搬入之基板搬運裝置。 基板搬運裝置係具有驅動部、連結於驅動部之臂、連 結於臂之前端的端點操控n (endeffeet⑷ 器之上面支精體晶圓之背面，而於複數個製程= 進行被處理基板之傳遞。 取 ΠΤ7 5 -哪一休技益係以陶瓷或不鏽鋼等來製作 因此’若使臂以高速進行伸縮動作錢轉動作時，端點 =亦會叫速進行動作，因此半導體晶圓會因為施加 1體晶®之加速度的影響而在端關控^軸，而會」 無法將半導體晶圓搬運至正確位置的問題。因此，在端j 知控益（手部）之上面，設置由橡膠所構成之止滑塾，^ 之在半導體晶®之㈣的指枝£接觸 _”（參_，文獻〗之崎嶋”圖; 夕，在/、他裝置t，細顧操控 :整面氧她等所構成之陶_之：二 ==圓::面_參照例如二之 第4頁左攔第7订至第4W右搁第35行）。 4/24 201133701 [先前技術文獻] [專利文獻] 專利文獻1 :日本特開2002_35329][號公報 專利文獻2 :日本特公平5-66022號公報 【發明内容】 [發明所欲解決之課題] 例如高分子彈性财之樹脂轉性材料所形 ⑽⑺墊，當半導體晶圓等之被處理基板之溫度或周圍 之’皿度相對奴低’例如為2〇(rc以下時’被處理基板之 會有效地受到抑制。但例如為至蕭c之溫度較高時， 會因為止滑塾受熱所導致之變質或變形， =處理基板之滑動之問題。此外，溫度相對較低時法^ 有被處理基板因為續墊之㈣而緊貼，無法從基板保 ^刀開而破裂之情形。因此，在腔室間傳遞基板時，會有 3將被處理基板搬運至正確位置之問題。此外，原ς上 係藉由止滑墊與被處理基板之間的摩擦力來抑制被處理基 板之巧動，因此當超過由雙方物質所決定之最大靜摩擦力 之，速度施加於被處理基板時，被處理基板就會在基板保 持部上滑動。因此，會有搬找置之動作速度無法超越止 滑墊與被處理基板之間的最大靜摩擦力 而加快之問題。 此外，以在基板保持部之上面整面設置由氧化叙等所 構成之陶瓷而成的靜電夾盤之方法而言，係為被處理基板 之者面整面與靜電夾盤接觸。在此方法中，即使是例如3〇〇 至5〇〇°c之溫度較高時亦可使用。然而，被處理基板因為處 f步鉍中之溫度的影響或所成膜之膜的應力而翹曲成凸狀 蚪、或翹曲成凹狀時，會有被處理基板之背面不再接觸靜 5/24 201133701 電夾盤之上面，而無法充分保持被處理基板，而且， 將被處理基板搬運至正確位置之問題。 …、法 到二二使本之目的係在提供-種不會受 確位置之基=持Γ置處理基㈣曲亦可保持於正 [解決課題之手段] 係具備她《—败絲保持裝置 上述支標構件係具有與被處理基板相對之表面。 M 保持粗係具有供電壓施加之電壓施加部、及設置 述電广”:if構件之上述表_對之上述被處理基板及上 接觸 ，緣…部二_二在 == 基板’而設置成從上述支_件之上述表面1 被處理力上述電4施加部施加賴，可控制上述 【實施方式】 件、實麵11之基㈣持裝置❹備支撐構 上述支撐構件係具有與被處理基板相對之表面。 述電壓施加部之間的電絕緣體。此外， 接觸包含上述被處理基板之中心的令央；：：:;=， 板之細之_獅似編 === 上述保持體係為了 6/24 201133701 二，..而⑨置成從上述切構件之上絲面突出，且藉 二1對上34電壓施加部施加雙，可控制上述被處理基 々叹"1示3寻力。 ;基板保持裝置係具備接觸被處理基板之中央部及 =部之間的區域而突出之保持體，因此即使因為成膜步 :中之溫度或所成膜之膜的應力而於被處理基板產生麵 ^目較於載設平坦的被處理基板之情形，仍可保持被處 王土板與保持體之接觸面積使其不會大幅減少。因此，即 被處理基板之㈣’亦可在不偏離位置下穩定地保 持被處理基板。 t此，假設將倾體僅與魏絲板之t央部對應設 之月fF ’例如於㈣曲成凹狀之被處理基板予以保持 相李乂於载5又未輕曲而為平坦之被處理基板之情形，保 ，體與被處理基板之接觸面積減少，使得保持變得不穩 ^而成為位置偏離之原因。此外，將保持體僅與被處理 基板之邊緣部制設置之情形下，例諸 ，基板予以保持時，相較於載設未輕曲而為= 处^基板之情形’被處理基板與保持體之接觸面積減少， 使得保持變科敎，而成為位践離之職。或者 =持體與被處理基板之整面職設置之情形下，於被處理 ^板輕曲時’她於載設核㈣為平坦之被處理基板之 二形’被處理基板與保持體之接觸面積減少，使得保持變 =不穩定，而成為位置偏離之顧。相對於此，在本發明 紅係將㈣體對應於被處理基板之巾央部與邊緣部^間 2域而設置，因轉賴處理絲產生㈣，相較 汉平坦的被處理基板之情形，仍可保持被處理 早 7/24 201133701 體之接觸面積使其不會大幅減少’而可在不偏離位置下保 持被處理基板。 此外，由於將保持體設於中央部與邊緣部之間的區 域’因此可防止塵屑的產生或被處理基板之污染等。亦即， 將保持體與被處理基板之邊緣部對應設置之情形下，於被 處理基板翹曲成凹狀時，會有被處理基板之背面中央部接 觸載設部之情形。此外，將保持體與被處理基板之中央部 對應設置之情形下，於被處理基板翹曲成凸狀時，會有被 處理基板之邊緣部接觸載設部之情形。由於此種接觸，會 產生塵屑，而產生被處理基板之污染。為了防止此種接觸， 雖亦可考慮提高保持體的高度，惟藉由在中央部與邊緣部 之間的區域設置保持體，可將保持體之高度設計成較低。 因此，即可防止塵屑的產生或被處理基板之污染，又可將 例如供基板保持裝置收容之處理室的設計範圍擴增。 、上述被處理基板係可為圓形’而上述保持體係可設於 上述被處理基板之同心圓上。藉此，由於保持體係設於從 被處理基板之中心起相同距離的位置，因此於被處理基板 產生勉，時’可將被處理絲德曲程度大助同產生的 位置’藉由保持料以確實地保持。因此，可進_步防止 因為被處理基板之翹曲所導致之位置偏離。 上述保持體係可具有：與上述表面平行的第 1座面； 朝向上述巾央部並向下方傾斜的第2座面；及朝向上述邊 ”彖#並向下箱斜的第3座面。藉此，即使被處理基板魅 曲’亦:充分確倾處理基㈣倾體之接觸面積 ，因此 可更確實地料财保持被處理基板，且可更進-步 地確實防止因為龜曲所導致之被處理基板的位置偏離。亦 8/24 201133701 p丄被處理基板Μ成凹狀之情形下，被處理基板係以隨 =座面與弟2座面之傾斜面之方式接觸。因此，保持 =在弟1座面及第2座面之區域，與被處理基板之背面 接，，而可獲得充分的接觸面積，且可在不偏離位置下確 =進，理基板之保持。此外，被處理基板不輕曲而 下，被處理基板係接觸第1座面、第2座面 因此，保持體係在第1座面、第2座面及第3 座面之區域，與被處理基板之背面接觸，而可獲得充分的 接觸面積，且可在不偏離位置下確實地進行 第?處理基_曲成凸狀之情形下，被歧基 此二二^ 座面之傾斜面之方式接觸。因 :之=座面及第3座面之區域，與被處理基 ==，而可獲得充分的接觸面積，且可在不偏離 位置下確:r地進行被處理基板之保持。 上述保持體之剖面的上部係可具— 皮處理基板_，亦可更確實地藉：來： 持被處理基板，而可费谁一牛丄— 、术保 之被處理基板的位置偏離。：f防止因為翹曲所導致 情形下’被處理基板仍以隨動凸狀:=二= 输曲之 :充分獲得保持體與被處理基板之接:；在= 離位置下確實地進行被處縣板之 了在不偏 上述保持體係可為單極方式之靜電夹盤。 述保持脰係可為雙極方式之靜電爽盤。 上逑保持體係可設有複數個 有分別配置有上述複數個保持體之複數=件=具 亦可應用於具備有搬運被處理基板之指狀=板:;裝 201133701 置之保持體，即使因為處理步驟令之熱或成膜所形成之膜 的應力而導致被處理基板之翹曲，亦可在不偏離位置下來 搬運被處理基板。 以下一面參照圖式一面說明本發明之實施形態。 ；圖1係為顯示本發明之一實施形態之基板搬運裝置之 斜視圖。圖2 (a)係為構成® 1之基紐運裝置之一部分 之做為基板保持裝置之端點操控器之俯視圖。圖2⑻係 為圖2 (a)之線Α·Α’之剖面圖。圖3係為做為保持體之靜 電夾I之。〗面圖，目3 (a)係|貞示保持有鍾曲成凹狀之做 為被處理基板之半導體晶圓之狀態，圖3 (b)係顯示保持 有未輕曲而為平坦之半導體晶圓之狀態，目 保持有-曲成凸狀之半導體晶圓之狀態。在圖3各‘.中計 +導體晶圓〜之中心係位於圖式右側。基板搬運裝置係例 ϋ盖又置。另外’在圖式中’為使圖式易於觀看， 各構成之尺之刻度有所變更。[Technical Field] The present invention relates to a substrate holding device including a holding body, which is used for holding a substrate held by a substrate such as a semiconductor wafer. . [Prior Art] In an apparatus for manufacturing a semiconductor element, an electronic product, or the like, a plurality of process chambers for performing various processing on a substrate to be processed, and a substrate to be processed into and out of the process are provided. The substrate transfer device. The substrate transfer device includes a drive unit, an arm coupled to the drive unit, and an end point control n (end of the upper end of the end of the arm), and the plurality of processes are performed on the substrate to be processed. Take ΠΤ7 5 - Which yiyiyi is made of ceramic or stainless steel, etc. Therefore, if the arm is rotated at high speed, the end point = will also be called speed, so the semiconductor wafer will be applied by one body. The effect of the acceleration of the Crystal® is to control the axis at the end, and it is impossible to carry the semiconductor wafer to the correct position. Therefore, on the side of the control, the rubber is formed. Stop slippery, ^ in the semiconductor crystal® (4) the finger touch _" (see _, the ruggedness of the literature) map; eve, in /, he device t, take care of the manipulation: the whole face oxygen her office The composition of the pottery _: two == circle:: face _ refer to, for example, the second page of the second page, the left block, the seventh order, the fourth, the right, the third line, the third line.) 4/24 201133701 [Prior Art Document] [Patent Document] Patent Document 1: Japanese Laid-Open Patent Publication No. 2002_35329] [No. Publication Patent Document 2: Japan Special Fair 5 - [Abstract] [Problems to be Solved by the Invention] For example, a resin-transferring material of a polymer elastic material is formed in a (10) (7) pad, and the temperature of the substrate to be processed such as a semiconductor wafer or the surrounding The low 'for example, 2 〇 (when rc is less than 'the substrate to be processed is effectively suppressed. However, for example, when the temperature to the lower c is high, the deterioration or deformation due to the heat of the anti-slip , is caused, = the substrate is processed. In addition, when the temperature is relatively low, the substrate to be processed is close to the substrate (4), and cannot be broken from the substrate. Therefore, when the substrate is transferred between the chambers, there will be a problem. (3) The problem of transporting the substrate to be processed to the correct position. In addition, the original crucible suppresses the movement of the substrate to be processed by the friction between the anti-slip mat and the substrate to be processed, and therefore exceeds the matter determined by both substances. When the maximum static friction force is applied to the substrate to be processed, the substrate to be processed slides on the substrate holding portion. Therefore, the moving speed of the positioning operation cannot exceed the between the sliding pad and the substrate to be processed. The problem of accelerating the friction by the large static friction. The method of providing the electrostatic chuck formed by arsenic or the like on the entire surface of the substrate holding portion is the entire surface of the substrate to be processed. Electrostatic chuck contact. In this method, even if the temperature is high, for example, 3 〇〇 to 5 〇〇 ° C. However, the substrate to be processed is affected by the temperature in the step f or the film is formed. When the stress of the film is warped into a convex shape or a warped shape, the back surface of the substrate to be processed is no longer in contact with the upper surface of the electrostatic chuck, and the substrate to be processed cannot be sufficiently held, and , the problem of transporting the substrate to be processed to the correct position. ..., the law to the second two to make the purpose of the supply - the base will not be confirmed = the handle processing base (four) can also be maintained in the positive [solving the problem The means for providing the "supporting device" has the surface opposite to the substrate to be processed. M is kept thick and has a voltage application portion for voltage application, and the above-described table of the if member is used for the above-mentioned processed substrate and the upper contact, and the second portion is provided in the == substrate The above-mentioned surface 1 of the above-mentioned support member is applied by the electric force applying portion, and the base member of the above-mentioned embodiment and the solid surface 11 can be controlled. The support member has the support member and the substrate to be processed. Opposite surface. An electrical insulator between the voltage applying portions. Further, contacting the center of the substrate including the substrate to be processed;:::;=, the fineness of the board_狮似编=== The above maintaining system is 6 /24 201133701 Second, .. and 9 is placed to protrude from the upper surface of the above-mentioned cutting member, and by applying a pair of two pairs of upper 34 voltage applying portions, the above-mentioned treated substrate sigh can be controlled. The substrate holding device is provided with a holder that protrudes from a region between the central portion and the portion of the substrate to be processed, and thus is generated on the substrate to be processed due to the temperature in the film formation step or the stress of the film formed. The surface is processed better than the flat one. In the case of the board, the contact area between the king earth board and the holding body can be maintained so as not to be greatly reduced. Therefore, the (4) of the substrate to be processed can also stably maintain the substrate to be processed without deviating from the position. It is assumed that the substrate to be processed is only to be treated with the substrate fF of the tip of the Weisi plate, for example, in the (four) curved substrate, and the substrate to be processed is kept flat and not flattened. In this case, the contact area between the body and the substrate to be processed is reduced, so that the holding becomes unstable and becomes a cause of positional deviation. Further, in the case where the holding body is disposed only with the edge portion of the substrate to be processed, for example, When the substrate is held, the contact area between the substrate to be processed and the holder is reduced as compared with the case where the substrate is not lightly bent, so that the contact area between the substrate to be processed and the holder is reduced, and the position is changed. In the case where the holder and the substrate to be processed are disposed in the entire position, the contact area between the substrate to be processed and the holder in which the substrate (4) is a flat substrate to be processed is reduced when the substrate is lightly curved. To keep changing = unstable On the other hand, in the red system of the present invention, the (four) body is provided corresponding to the center of the towel portion and the edge portion of the substrate to be processed, and the yarn is generated by the transfer processing (four). In the case of a flat substrate to be processed, the contact area of the body treated 7/24 201133701 can be maintained so as not to be greatly reduced, and the substrate to be processed can be held without deviating from the position. Further, since the holder is placed in the center The region between the portion and the edge portion can thus prevent the generation of dust or the contamination of the substrate to be processed, etc., that is, in the case where the holder is disposed corresponding to the edge portion of the substrate to be processed, the substrate to be processed is warped. In the case of a concave shape, the central portion of the back surface of the substrate to be processed may be in contact with the mounting portion. Further, when the holding body is disposed corresponding to the central portion of the substrate to be processed, when the substrate to be processed is warped into a convex shape, There is a case where the edge portion of the substrate to be processed contacts the mounting portion. Due to such contact, dust is generated, which causes contamination of the substrate to be processed. In order to prevent such contact, it is also conceivable to increase the height of the holding body. However, by providing the holding body in the region between the central portion and the edge portion, the height of the holding body can be designed to be low. Therefore, it is possible to prevent the generation of dust or the contamination of the substrate to be processed, and to expand the design range of the processing chamber for housing the substrate holding device, for example. The substrate to be processed may be a circular shape, and the holding system may be provided on a concentric circle of the substrate to be processed. Thereby, since the holding system is disposed at the same distance from the center of the substrate to be processed, when the substrate to be processed is generated, the position of the processed wire can be greatly assisted by the position of the treated wire. Keep it. Therefore, the positional deviation due to the warpage of the substrate to be processed can be prevented. The holding system may include a first seating surface that is parallel to the surface, a second seating surface that is inclined downward toward the center of the towel, and a third seating surface that faces the side 彖# and is inclined downward. Therefore, even if the substrate to be processed is embossed, the contact area of the substrate (four) is fully confirmed, so that the substrate to be processed can be more reliably preserved, and the substrate can be prevented from being further prevented by the turtle. The position of the substrate to be processed is shifted. When 8/24 201133701 p丄 The substrate to be processed is folded into a concave shape, the substrate to be processed is in contact with the inclined surface of the seat surface and the second seat surface. In the area between the first seat surface and the second seat surface, the back surface of the substrate to be processed is connected to the back surface of the substrate to be processed, and a sufficient contact area can be obtained, and the substrate can be held without deviation from the position. The substrate is not gently bent, and the substrate to be processed is in contact with the first seating surface and the second seating surface. Therefore, the holding system is in contact with the back surface of the substrate to be processed in the regions of the first seating surface, the second seating surface, and the third seating surface. , and a sufficient contact area can be obtained, and can be In the case where the first processing base is bent into a convex shape, it is contacted by the inclined surface of the two base surfaces of the base. Because: the area of the seat surface and the third seat surface is treated Base ==, and a sufficient contact area can be obtained, and the substrate to be processed can be held without deviation from the position. The upper portion of the cross section of the above-mentioned holding body can be treated with a skin-processing substrate, and can be more sure Borrowing: Comes: Holding the substrate to be processed, and who can pay for it - the position of the substrate to be processed is deviated. : f Prevents the substrate to be processed from being bumped due to warpage: = two = the output of the song: fully obtain the connection between the holder and the substrate to be processed:; in the = position to be surely carried out in the position of the plate is not biased above the above system can be a single-pole electrostatic chuck. The lanthanide system can be a bipolar electric static plate. The upper sputum holding system can be provided with a plurality of plural constituting the plurality of retaining bodies respectively, and the same can be applied to the finger having the substrate to be processed. Board:; installed 201133701 to hold the body, even because of the processing steps The heat of the film or the film formed by the film formation causes warpage of the substrate to be processed, and the substrate to be processed can be transported without departing from the position. Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Fig. 2(a) is a plan view showing an end effector of a substrate holding device which is part of a base device of the present invention. Fig. 2(8) is a plan view showing a substrate handling device according to an embodiment of the present invention. Figure 2 (a) is a cross-sectional view of the line Α·Α'. Figure 3 is the electrostatic clamp I as the holding body. Fig. 3, (a) series | 保持 shows that the bell is concave As a state of the semiconductor wafer of the substrate to be processed, FIG. 3(b) shows a state in which a semiconductor wafer which is not flat and flat is held, and the semiconductor wafer is bent to have a convex shape. In the center of Figure _, the center of the conductor wafer ~ is located on the right side of the drawing. Example of the substrate transfer device The cover is placed again. In addition, in the drawings, the scale of each of the components is changed in order to make the drawings easy to see.
°所示基板搬運裝置1〇〇係具有驅動部5〇、連 結於驅動部5G之臂6G、及連結於臂6G =處=置1之上面= 之傳遞。在本實施形態中，= 直彳二為100至30〇mm、厚度為0 5至Imm 叫曲杨"直一 之+導體Ba 0之情形而t，厚錢為Q.775mm。 如圖2所不’端點操控器1係具有基部2、從基邻2延 ==rr在本實施形態中係為2二 曰土 ά狀部3形成支撐半導體晶圓之支樓構件9。 10/24 201133701 半導體晶圓w係以與該支撐構件 過後述的靜電越被切構件9切。' 目/之方式，透 呈分離配置。半導體日_牙支指狀部3、3係 該基部2之4==二^，=”之：料、及與 係由例如氧化料之陶料所構成。#。知點#控器1 收容=二=之，，係咖 二：::與:__之背咖對= 著半導體㈣外爾有大致沿 口面朝向支撐構件9之表面之 W 7係具有開 變小之傾斜側面η直到凹二=部7之底面1〇而 側面11之内周緣中之開 ： 於俯視時’傾斜 點操控器1之凹部7對應 # a係成為搬譲。與端 凹部7對應之區域以外之心:二=1.8_。與 凹部::=r卜之指狀部3之而與 7係具有：圓形之 體晶圓W之中心20> 士 + 區或2丨，其係與包含半導 係盘半導體a π 央部對應；環狀第2區域22，发 域a其：::二^ 導體晶圓w之中心導^域心斤包夾。所謂半 =位:配置‘器二圓：口二而 在基部3'3所包夹之區域。 體之靜她“做為保持 圓弧狀之做為保持體之靜電夾盤6 11/24 201133701 由控制對後述之電壓施加部之電極15 (16)施加 控制半導體晶圓〜之保持力。在此所稱之保持力=控制來 並不限於是有保持力，亦即不限於將施加電壓進p N (導通）/OFF (關斷）控制之形態，而亦包含使保才: 制為可餸之形態。靜電夾盤5、6係從凹部7之底面'i〇作 出而設置。半導體晶圓W係藉由靜電缝5' 6局部性$ 撐與其第3區域23對應之區域而且予以吸附保持。亦即， 靜電夾盤5、6係藉由與半導體晶圓w之背面側之區域， 即包括含半導體晶圓W之中心20的中央部2〇之中央部與 半導體晶圓W之邊緣部74之間的區域接觸，來保持半導 體晶圓w。半導體晶圓w除了由靜電夾盤5、6所支撐之 區域以外，均成為從凹部7之底面1〇分離之狀態。 設半導體晶圓W之半徑為r時，環狀第3區域23之範 圍在以、’句來表示第3區域23之外圓半徑，且以約 〇.56r來表示第3區域23之内圓半徑。在本實施形態中，雖 ，假設半導體晶圓w之直徑為·_時之情形，惟不限 疋於此大小，藉由在如上所述之第3區域之範圍内設置靜 電夾盤，即使半導體晶圓W產生翹曲，仍可在靜電夾盤與 半導體晶圓獲得充分的接觸面積。 靜電夹盤5、6係設於圓形之半導體晶圓W之同心圓 73上。在本實施形態中，半導體晶圓W係在設於各指狀部 3、3之2個靜電失盤6、6與設於基部2之1個靜電夾盤5 之3點被吸附保持。 _ f電夹盤5、6係具有8mm之寬度與〇.5mm之高度（後 述之第1座面27之高度h)，從中心2〇至靜電夾盤5、6之 卜周、’彖之距離1係為119mm，而從中心20至靜電夾盤5、6 12/24 201133701 之内周緣之距離j係為lllmm。在本實施形態中’假設直 徑為300mm之半導體晶圓W之翹曲為± 1mm之情形下，靜 電夾盤5、6係配置於從中心20起為85mm以上且為130mm • 以下之區域。在此，靜電夾盤之寬度方向之中心，係設定 ' 為從中心20起為115mm附近。當靜電失盤5、6位於比從 中心起l3〇mm更外側時，半導體晶圓W輕曲成凹狀之情 形下，半導體晶圓W之背面將會接觸凹部7之底面10。當 靜電夾盤5、6位於比從中心起85mm更内側時，半導體晶 圓W翹曲成凸狀之情形下，半導體晶圓W之邊緣部74將 會接觸凹部7之底面1〇。因此’藉由將靜電夾盤5、6配置 於從中心起為85mm以上且為130mm以下之區域，即使半 導體晶圓W翹曲成凹狀或凸狀’半導體晶圓w亦不會接觸 端點操控器1 ’而可防止因為接觸所導致之塵屑之產生或半 導體晶圓W之污染等。在本實施形態中，從半導體晶圓w 之中心20起為85m以上且為13〇mm以下之區域係相當於 前述之第3區域23。 如W所述，靜電夾盤5、6為了接觸並保持半導體晶圓 W’係具備魏置有半導體晶圓w之支稽構件9之表面即 凹4 7的底面1G突出之形狀。如圖2(b)及圖3所示，靜 電失盤5 (6)之剖面敍致為六角形。靜電夾盤5⑷係 具;有第1座面27、第2座面28、及第3座面29。第丨座面 仏與底面10平行，亦即設為與凹部7之第】區域中 面平仃。第2座面28係朝向半導體晶圓冒之中心，， 朝向區域21並向下方傾斜設置。* 3座面29係 :Wa曰圓W之邊緣部74，亦即朝向第2區域22並 向下方傾斜設置。在靜電失盤5(6)中，寬度e係為8譲， 13/24 201133701 第1座面27之寬度f係為4mm，第2座面28及第3座面 29之各寬度g係為2mm，第1座面27中之高度h係為 0.5mm，第2座面28及第3座面29中之高度i係為0.4mm。 在本實施形態中，係將靜電夾盤5、6在第3區域23 呈凸狀設於半導體晶圓W之同心圓73上。藉此，即使半 導體晶圓W翹曲’亦可在該翹曲程度為相同的位置，藉由 靜電夾盤5、6來吸附保持半導體晶圓W，而可防止因為翹 曲所導致之位置偏離。相對於此，在對半導體晶圓W之背 面整面设置靜電夾盤之情形下，半導體晶圓與靜電夾盤係 因為翹曲而不會全面接觸，其接觸區域會改變，而產生位 置偏離。 再者，在本實施形態中，係藉由在靜電夾盤5、6之』 ^置第1座面27、第2座面28及第3座面I即使斗 ^晶圓W_，仍可將半導體晶圓w予以確實地吸附侍 圓步t貫地防止因為趣曲所導致之半導體晶 二’如圖3 (a)所示，半導體晶圓^ 之傾斜面之方式制。因此，靜電二^之第=面， 27與第2座面28，係在符號7〇所示之 第座面 晶圓W之背面接觸，而可獲得 域與半導體 偏離位置下確實地進行半導體晶可在不 (b)所示’在半導體晶圓w輪㈣ 之如圖3 半導體晶圓W係接觸第i座面27、莖—之情形下， 座面29之-部分。因此’靜電爽部5各第2座面⑶、第3 各第2座面座面29之；二與 之接觸輯料導❹圓w之“ 14/24 201133701 接觸面積，且可在偏 之_一圖=下+確導實==圓w 觸半因導!晶圓w係"隨動第3座面29之： ’付5虎72所示之接觸區域盥半導@ S Π W + 背面接觸，而可獲得充分·雜、牛導组曰曰囡…之 下確實地it彳f面積，且可在不偏離位置 貝地進订+導體晶圓W之吸附保持。 如：3 (a)至圖3 (c)所示，無論 ® W之翹曲，均可將半導體 生牛，版日日 觸區域70至72之寬声1心W吳靜電夾盤5、6之接 a n . 。又為、力6mm，而可防止因為半導體 日日a W之輕曲所導致之靜電夹盤不&。 牛導版 如圖3所示，做為保持體之靜電夾盤5、6係且、 呂、或金等所構成之電極15 (16)、及由用以覆蓋該電極 5(16)之乳化!呂等所構成之電絕緣體25叫。在圖3中， 二極15 (16)之寬度係為6_。在靜電夾盤$ 错由對_b(16)供給電壓來控侧電絕緣體25(^ 中^作用之吸附保持。於靜電失盤 中，係叮使用早極方式、雙極方式之任一種方式。在單極 方式中’係可使1個電極與半導體晶圓W之間產生電位差 而使半導體晶圓W吸附於靜電失盤。在雙極方式中，係可 對2個電極分別施加極性不同的電壓，使2個電極間產生 電位差而使半導體晶圓W吸附於靜電失盤。 靜電夾盤5、6係可於在氧化在呂製之端點操控器i使用 缝戒印刷技術將溥膜電極形成為圓弧狀之後，藉由將哼 電極以電祕料錢絲軸。简絕緣體Μ，係^ 使用聚贐亞胺、碳化石夕陶究、氧化铭、I化銘等，在本實 15/24 201133701 施形態中’由於係以氧她來形成端 氧化鋁做為電絕緣體。 ” /N工11，因此使用 接著使用圖4及圖5來駘--托士上丄 形狀™圖6及圖7.=== 面形狀例。在各圖中，將構成靜電爽盤的電極予 電絕緣體的圖示係予以省略。 復盖之 使用圖4來說_成單極方式之靜電夹盤 115、116之形狀例。以單極方式之情形而言，係對= 115、116施加相同極性的電壓。設於指狀部3、:: 盤6之電極m、116係分別具有圓孤狀。設於基部 電夾盤5之電極115亦具有圓弧狀。在端點操控器i上， 係設有配線130與配線131。配線130係電性連接於電極 Π6、116 ’且延伸形成至位於臂6Q與端點操控器1之 部分附近之電極取出部133。配線131係與電極ii5電性= 接且延伸形成至⑽臂60與端麟控n丨之賴部分附 之電極取出部132。各電極115、116之電極取出部、 133，係設計為：一併設於臂6〇與端點操控器丨之連結部 分附近，藉以可一起供給電壓。 在圖4中之單極方式的靜電爽盤中，雖係將電極取出 部配置於臂60與端點操控器1之連結部分附近而可一起供 給電麈，惟不限定於此。例如，如圖5所示，亦可設計成 使電極取出部135、135位於最靠近各電極116、116之處 (例如指狀部3上）之方式設置配線134、134，及使電= 取出部139位於最靠近電極115之處之方式設置配線138 而可個別供給電壓。 使用圖6來說明構成雙極方式之靜電夾盤5、6之電極 16/24 201133701 170、180、174、184 之形狀例。以 施加於電極17〇、174之電壓的極性 184之雷厭必搞Μ古糾 π m Λ切· j 以雙極方式之情形而言， [生，係與施加於電極180、 184之電壓的極性有所不同。設於各指狀部3、3之靜電夾 盤6，係具有梳齒狀電極170、180，該電極17〇、18〇係具 有複數個分獅加有不同極性之賴的齒。各電極i7〇、i8〇 之齒’係交替配置使相鄰之齒成為不同電極，而電極17〇、 180之齒均設成圓弧狀。形成靜電夾盤6之電絕緣體，係以 覆蓋電極170、180兩者之方式形成，在各指狀部3、3中， 分別各形成1個圓弧狀之靜電夾盤6、6。設於基部2之靜 電夾盤5’係具有梳齒狀電極174、ι84，該梳齒狀&電極η/、 ]84係具有複數個分別施加有不同極性之電壓的齒。各電極 =4、184之齒，係交替配置使相鄰之齒成為不同電極，且 黾極174 184之齒均设成圓弧狀。形成靜電夾盤5之電絕 緣^係以覆蓋電極174、184兩者之方式形成。在端點操 控器1上，係設有配線171，該配線171係用以將設於各指 狀部3之電極170、170與設於基部2之電極174予以電連 接，且延伸至位於臂60與端點操控器丨之連結部分附近之 電極取出部]75。再者，在端點操控器！上，係設有配線 181，該配線181係用以將設於各指狀部3、3之電極18〇、 180與设於基部2之電極184予以電連接，且延伸至位於臂The substrate transfer device 1 shown in Fig. has a drive unit 5A, an arm 6G connected to the drive unit 5G, and a transfer to the upper side of the arm 6G==1. In the present embodiment, the ratio = 100 to 30 mm, the thickness of 0 to Imm is called Qu Yang " straight one + the conductor Ba 0 and the thick money is Q.775 mm. As shown in Fig. 2, the end point manipulator 1 has a base portion 2, and is extended from the base 2 by == rr. In the present embodiment, it is a 2 bauxite. The beak portion 3 forms a branch member 9 for supporting the semiconductor wafer. 10/24 201133701 The semiconductor wafer w is cut so that the static electricity described later is cut by the cutting member 9 with the support member. 'The purpose of the /, the transparent configuration. The semiconductor day_dental finger 3, 3 is the base 2 of the 4 == two ^, = ": material, and the system is composed of, for example, cermet oxide ceramic material. #.知点# controller 1 containment =2=,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The bottom surface of the concave portion=the portion 7 is open to the inner circumference of the side surface 11: The concave portion 7 of the inclination point manipulator 1 corresponds to the movement of the concave portion 7 in a plan view. The heart other than the region corresponding to the end concave portion 7 is: Two = 1.8_. With the concave portion::=rb of the finger 3 and the 7 series: the center of the circular body wafer W20> 士+区 or 2丨, the system and the semi-conducting collar The semiconductor a π central part corresponds; the annular second area 22, the hair field a::: two ^ the conductor wafer w the center of the field is the heart of the package. The so-called half = bit: configuration 'the second circle: mouth two In the area covered by the base 3'3, the static body of the body is used as the electrostatic chuck 610/24 201133701 which is held in an arc shape as a holding body. Applying control semiconductor crystal Round ~ the retention. The term "retention force = control" as used herein is not limited to having a holding force, that is, not limited to the form in which the applied voltage is applied to the p N (on) / OFF (off) control, but also includes Awkward form. The electrostatic chucks 5, 6 are provided from the bottom surface of the recessed portion 7i. The semiconductor wafer W is locally adsorbed and held by the electrostatic slit 5'6 in a region corresponding to the third region 23. That is, the electrostatic chucks 5, 6 are formed by the region on the back side of the semiconductor wafer w, that is, the central portion of the central portion 2 including the center 20 of the semiconductor wafer W, and the edge portion 74 of the semiconductor wafer W. Contact between the areas to maintain the semiconductor wafer w. The semiconductor wafer w is separated from the bottom surface 1 of the concave portion 7 except for the region supported by the electrostatic chucks 5, 6. When the radius of the semiconductor wafer W is r, the range of the annular third region 23 indicates the outer radius of the third region 23 by "sentence", and the inner circle of the third region 23 is expressed by about 56.56r. radius. In the present embodiment, although the diameter of the semiconductor wafer w is assumed to be _, it is not limited to this size, and an electrostatic chuck is provided in the range of the third region as described above, even if the semiconductor The wafer W is warped, and a sufficient contact area can be obtained between the electrostatic chuck and the semiconductor wafer. The electrostatic chucks 5, 6 are disposed on concentric circles 73 of a circular semiconductor wafer W. In the present embodiment, the semiconductor wafer W is adsorbed and held at three points of the electrostatic chucks 6, 6 provided in the respective finger portions 3, 3 and one of the electrostatic chucks 5 provided in the base portion 2. _ f electric chucks 5, 6 have a width of 8 mm and a height of 〇. 5 mm (the height h of the first seat surface 27 to be described later), from the center 2 〇 to the electrostatic chuck 5, 6 of the week, '彖之The distance 1 is 119 mm, and the distance j from the center 20 to the inner circumference of the electrostatic chuck 5, 6 12/24 201133701 is lllmm. In the present embodiment, when the warpage of the semiconductor wafer W having a diameter of 300 mm is ± 1 mm, the electrostatic chucks 5 and 6 are disposed in a region of 85 mm or more and 130 mm or less from the center 20. Here, the center of the width direction of the electrostatic chuck is set to be near 115 mm from the center 20. When the electrostatic loss discs 5, 6 are located outside the l3 mm from the center, the semiconductor wafer W is slightly curved into a concave shape, and the back surface of the semiconductor wafer W will contact the bottom surface 10 of the recess 7. When the electrostatic chucks 5, 6 are located more than 85 mm from the center, the semiconductor wafer W is warped into a convex shape, and the edge portion 74 of the semiconductor wafer W will contact the bottom surface 1 of the recess 7. Therefore, by disposing the electrostatic chucks 5 and 6 in a region of 85 mm or more and 130 mm or less from the center, even if the semiconductor wafer W is warped into a concave shape or a convex shape, the semiconductor wafer w does not contact the end point. The manipulator 1' prevents the generation of dust due to contact or contamination of the semiconductor wafer W. In the present embodiment, a region of 85 m or more and 13 mm or less from the center 20 of the semiconductor wafer w corresponds to the third region 23 described above. As described in W, the electrostatic chucks 5, 6 have a shape in which the bottom surface 1G of the concave portion 47, which is the surface of the support member 9 on which the semiconductor wafer w is placed, is protruded in order to contact and hold the semiconductor wafer W'. As shown in Fig. 2(b) and Fig. 3, the cross section of the static loss plate 5 (6) is hexagonal. The electrostatic chuck 5 (4) has a first seating surface 27, a second seating surface 28, and a third seating surface 29. The second seat surface 仏 is parallel to the bottom surface 10, that is, it is set to be flush with the middle surface of the first portion of the recess 7. The second seating surface 28 is oriented toward the center of the semiconductor wafer and is inclined downward toward the region 21. * 3 seat surface 29 series: The edge portion 74 of the Wa round W, that is, the second region 22 is inclined downward. In the static loss plate 5 (6), the width e is 8 譲, 13/24 201133701 The width f of the first seating surface 27 is 4 mm, and the widths g of the second seating surface 28 and the third seating surface 29 are 2 mm, the height h of the first seating surface 27 is 0.5 mm, and the height i of the second seating surface 28 and the third seating surface 29 is 0.4 mm. In the present embodiment, the electrostatic chucks 5, 6 are provided in the third region 23 in a convex shape on the concentric circles 73 of the semiconductor wafer W. Thereby, even if the semiconductor wafer W is warped, the semiconductor wafer W can be adsorbed and held by the electrostatic chucks 5 and 6 at the same position of warpage, thereby preventing positional deviation due to warpage. . On the other hand, in the case where an electrostatic chuck is provided on the entire surface of the back surface of the semiconductor wafer W, the semiconductor wafer and the electrostatic chuck are not in full contact due to warpage, and the contact area thereof is changed to cause positional deviation. Furthermore, in the present embodiment, even if the first seating surface 27, the second seating surface 28, and the third seating surface I are placed on the electrostatic chucks 5 and 6, the wafer W_ can be placed. The semiconductor wafer w is surely adsorbed to prevent the semiconductor crystal 2' caused by the distortion of the semiconductor wafer 2 as shown in Fig. 3 (a). Therefore, the second surface 27 of the static electricity, 27 and the second seating surface 28 are in contact with the back surface of the wafer W of the first surface shown by the symbol 7A, and the semiconductor crystal is reliably obtained at a position deviating from the semiconductor. The portion of the seating surface 29 may be in the case where the semiconductor wafer W is in contact with the i-th seat surface 27 and the stem as shown in FIG. 3 of the semiconductor wafer w wheel (four) as shown in (b). Therefore, the second electrostatic charging portion 5 has the second seating surface (3) and the third female seating surface 29; and the second contact with the material guide circle w "14/24 201133701 contact area, and can be biased" A picture = lower + true guide == circle w touch half guide! Wafer w system " follow the third seat surface 29: 'Pay the contact area shown by 5 tiger 72 盥 semi-conductor @ S Π W + With the back contact, it is possible to obtain a sufficient area, a bovine lead group, a positive area, and an adsorption holding of the conductor wafer W without deviating from the position. For example: 3 (a ) As shown in Figure 3 (c), regardless of the warpage of the W, the semiconductor can be used to produce a wide range of sounds, from the 70 to 72, to the wide-angle 1 and W-electrostatic chucks 5 and 6. The force is 6mm, and it can prevent the electrostatic chuck from being caused by the lightness of the semiconductor day and day. The cow guide plate is shown in Fig. 3 as the electrostatic chuck 5 and 6 of the holding body. An electrode 15 (16) composed of LV, or gold, and an electrical insulator 25 composed of an emulsifier, etc., for covering the electrode 5 (16). In Fig. 3, the pole 15 (16) The width is 6_. In the electrostatic chuck, the error is supplied by _b(16). In the unipolar mode, one electrode and the semiconductor can be used in the unipolar mode. A potential difference is generated between the wafers W to cause the semiconductor wafer W to be adsorbed to the electrostatic chuck. In the bipolar method, voltages of different polarities can be applied to the two electrodes, and a potential difference is generated between the two electrodes to make the semiconductor wafer. W is adsorbed on the electrostatic loss plate. The electrostatic chuck 5, 6 can be used to make the 溥 electrode be arc-shaped after the ruthenium is used in the end effector i of the ruthenium. The secret material Qiansi shaft. Simple insulator Μ, system ^ Use polyimine, carbon stone 陶 陶, oxidation Ming, I Hua Ming, etc., in this real 15/24 201133701 application form 'because of the oxygen to form her The end alumina is used as an electrical insulator. " / N work 11, so use the following Figure 4 and Figure 5 - 托 丄 丄 TM shape Figure 6 and Figure 7. = = = face shape example. In each figure The illustration of the electrode that constitutes the electrostatic cooling plate to the electrical insulator is omitted. Fig. 4 shows an example of the shape of the electrostatic chucks 115, 116 in a unipolar manner. In the case of the unipolar method, voltages of the same polarity are applied to = 115, 116. The fingers 3, :: The electrodes m and 116 of the disk 6 have a circular shape. The electrode 115 provided on the base electric chuck 5 also has an arc shape. On the end point controller i, the wiring 130 and the wiring 131 are provided. It is electrically connected to the electrode crucible 6, 116' and extends to the electrode extraction portion 133 located near the portion of the arm 6Q and the end effector 1. The wiring 131 is electrically connected to the electrode ii5 and extends to form an electrode extraction portion 132 attached to the portion of the arm 60 and the end of the arm. The electrode extracting portions 133 of the electrodes 115 and 116 are designed to be disposed in the vicinity of the connecting portion between the arm 6A and the end effector , so that the voltage can be supplied together. In the unipolar electrostatic discharge tray of Fig. 4, the electrode extraction portion is disposed in the vicinity of the connection portion between the arm 60 and the end point manipulator 1, and the electric power can be supplied together, but is not limited thereto. For example, as shown in FIG. 5, it is also possible to arrange the wiring 134, 134 so that the electrode extraction portions 135, 135 are located closest to the respective electrodes 116, 116 (for example, on the fingers 3), and to make the electricity = take out The portion 139 is located closest to the electrode 115 so that the wiring 138 is provided and the voltage can be individually supplied. An example of the shape of the electrodes 16/24 201133701 170, 180, 174, and 184 constituting the electrostatic chucks 5 and 6 of the bipolar mode will be described with reference to Fig. 6 . The polarity of the voltage 184 applied to the electrodes 17 〇, 174 is unmistakable. m m Λ Λ j j j j j j j j 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在The polarity is different. The electrostatic chuck 6 provided in each of the fingers 3, 3 has comb-shaped electrodes 170, 180 which have a plurality of lions with teeth of different polarities. The teeth of the respective electrodes i7 and i8 are alternately arranged such that the adjacent teeth are different electrodes, and the teeth of the electrodes 17 and 180 are arcuate. The electrical insulator forming the electrostatic chuck 6 is formed so as to cover both of the electrodes 170 and 180, and one arc-shaped electrostatic chucks 6, 6 are formed in each of the finger portions 3, 3, respectively. The electrostatic chuck 5' provided at the base portion 2 has comb-shaped electrodes 174, ι 84 having a plurality of teeth to which voltages of different polarities are applied, respectively. The teeth of each electrode = 4, 184 are alternately arranged such that adjacent teeth become different electrodes, and the teeth of the drain 174 184 are arcuate. The electrical insulation forming the electrostatic chuck 5 is formed to cover both of the electrodes 174, 184. The terminal manipulator 1 is provided with a wiring 171 for electrically connecting the electrodes 170, 170 provided on the respective fingers 3 and the electrodes 174 provided on the base 2, and extending to the arm. 60 electrode extraction portion near the connection portion of the end effector ]] 75. Again, in the endpoint manipulator! The wiring 181 is provided to electrically connect the electrodes 18A and 180 provided on the finger portions 3 and 3 to the electrode 184 provided on the base 2, and extends to the arm.
在圖6中之雙極方式之靜電夾盤中，雖係將電極取出 部配置於臂6G與端點操控n丨之連結部分附近使得可一起 供給電Μ，惟不限定於此。例如，如圖7所示，亦可設計 17/24 201133701 f各個電極之電極取出部175、185、172、182分別位於 最靠近各電極17G、18G、174、184之處之方式來設置各配 線176、186、173、183 ’而可個別供給電麗。 本毛明並非僅限定於上述實施形態，在不脫離本發明 之要旨之範圍内均可作各種變更。 y 在上述貫細形態中，靜電夾盤之剖面中之上部 形狀雖為具有3個座面之形狀，惟不限定於此。以下使用 圖8至圖1G進行酬。圖8 (a)係為具備有具有另一剖面 乂狀之月f電夾盤之端點操控器之俯視圖，圖8⑻係為圖 a)之B_B’之剖面圖。圖9係為設於圖8所示之端點操 二之4夾盤之剖面®。® 1㈣為具有再另-剖面形狀 评電夾盤之剖面圖。另外，對與上述實施形態相同之構 成’係賦予_符號，而省略其說明。 如圖8及圖9所示，設於端點操控器ι〇ι之靜電爽盤 私丄及2〇6之^面形狀亦可為矩形。靜電夾盤2〇5 (206) :電極215 (216)、及用以覆蓋此電極215 (216)之電 之 、广緣體225⑽）所構成。靜電夾盤2〇5 (2〇6)係具有與 之座面227。在此種構成中，亦藉由在第3區 pLi· °又置凸狀之静電失盤，而與上述實施形態相同地，可 低施因為半導體晶圓W之鍾曲所導致半導體晶圓W之位置 =等或因為接酬導致之㈣之魅或半導體晶圓w 此外’如圖10所示，具有電極315與覆蓋該電極315 ^絕緣體325之靜電夹盤3G5之上部327亦可設計成具 狀之曲©的構造。在此種構成巾，亦藉由在第3區域 设置凸狀之靜電夾盤，而與上述實施形態相同地，可防 18/24 201133701 止因為半導體晶圓w之翹曲所導致半導體晶圓％之位置偏 離；或因為接觸所導致之塵屑之產生或半導體晶圓〜之、、亏 染等。再者，由於上部327具有凸狀之曲面形狀，因此^ 使半導體晶圓W翹曲’半導體晶圓w亦會以隨動凸狀之上 部327之曲面之方式接觸，因此可充分確保半導體晶圓w 與靜電夾盤305之接觸面積。 此外，在此雖係省略圖示，惟亦可將靜電失盤之剖面 形狀设為上邊較底邊還短的梯形。此情形下，係設置與相 當於梯形之上邊的底面1〇平行之第丨座面、隨動半導體晶 圓W之Μ曲之第2座面、及第3座面。因此，即使半導體 晶圓W產—钱曲’半導體晶圓w亦會在屬於斜錐部分之= 2座面、« 3座面接觸，因此可充分獲得接觸面積，而不會 產生靜電夾盤不良，而不易產生位置偏離。 此外，在上述實施形態中，俯視時，各靜電夾盤5、6、 6雖係各設1個於端點操控器±，惟例如亦可將圓弧狀之靜 電夾盤朝徑方向排列複數個來構成。 此外，在上述實施形態中，設於基部2之靜電失盤$ 雖未成為延伸至端點操控器！之端部之形狀，惟亦可設為 在同心圓73上延伸至端賴控ϋ 1之端部之形狀。 此外’在上述實施形態中，電絕緣體25等雖係覆蓋電 極16而與電極16接觸’惟若設置於電極16與半導體晶圓 w之間，則亦可不與電極16接觸。 此外’在圖4之單極方式之靜電夾盤中，雖係設為一 起將相同極性的電壓施加於電極取出部132、133，惟亦可 使施加於電極取出部132與電極取出部133之電壓之極性 不同’而㈣整面之雙極方式之靜電夾盤來使 19/24 201133701 用。此外’在圖4之單極方式之靜電夾盤中，雖係設為一 起將相同極性的電壓施加於電極取出部i35、139， 使施加於電極取出部135與電極取出部139之電壓之極性 不同，而做為涵蓋晶圓整面之雙極方式之靜電夾盤來使用。 此外’在上述實施形態巾，雖係顯示在基板搬運裳置 之手部設置凸狀之保持體以做為基板保持t置之例，惟不 =定於此。例如’如圖n所示，亦可在用於成膜處理等之 I程腔室内之基板載設台設置本發明之凸狀之保持體。圖 n (a)係為具備基板載設台4G2做為支撐被處理基板之半 導體晶圓W之支撐構件的基板保持裝置彻之平面圖，圖 n (b)係為其剖面圖。 如圖/11所示，基板保持裝置400係具備：基板載設台 402 ’及靜電夾盤4〇卜該靜電夾盤4〇1係具有設為從基板 載設台402之表面至半導體晶圓同心圓上的凸狀電絕 、、彖奴。基板载设台402係具有：第1區域421，其係對應於 =央。P，s玄中央部係包括載設半導體晶圓w時之半導體晶 圓w之中心；第2區域422，其與半導體晶圓w之邊緣部 對應；及第3區域423’其由第1區域421與第2區域似 所包夾。靜電夾盤401係設於第3區域423。在此種構成中， 亦可藉由在第3區域423設置靜電夾盤4〇卜來防止因為半 導體晶圓W之触所導致半導體晶圓w之位置偏離或因為 接觸所導致塵屑之產生或半導體晶圓w之污染等。 【圖式簡單說明】 圖1為本發明之一實施形態之基板搬運裝置之斜視圖。 圖2為構成圖1所示之基板搬運裝置之一部分之端點 操控器之俯視圖及剖面圖。 20/24 201133701 圖 圖3為設於圖2所示之端點 攝控器之靜電失盤之剖面 盤之電極之平面形狀之 圖4為顯不早極方式之靜電失 俯視圖。 狀之俯視圖 俯視圖圖。6為顯示雙極方式之靜μ盤之電極之平面形狀之 圖7為顯示另一 狀之俯視圖。 雙極方式之靜電夾盤之電極之平面形 運襄置之一部分之 之靜電夾盤之剖面 圖8為構成另一實施形態之基板搬 端點操控器之俯視圖及剖面圖。 圖9為設於圖8所示之端點操控器 圖。 圖10為再另一實施形態之靜電夾盤之剖面圖。 圖11為再另一實施形態之基板保持裴置之概略俯視圖 及剖面圖。 【主要元件符號說明】 1、101 端點操控器 2 基部 3 指狀部 5 、 6 、 50 、 205 、 206 、 305 、 401 靜電夾盤 7 凹部 9 支撐構件 21/24 201133701 10 底面 11 傾斜側面 15 、 16 、 115 、 116、170、174 、 180、184、215 216 、 315 電極 20 中心 21 > 421 第1區域 22 > 422 第2區域 23、423 第3區域 25 、 26 、 225 、 226 ' 325 電絕緣體 27 第1座面 28 第2座面 29 第3座面 60 臂 70 接觸區域 73 同心圓 74 邊緣部 100 基板搬運裝置 130 ' 131 ' 134 138 ' 171 > 173 、 176 、 181 、 183 > 186 配線 132、133、135 139 ' 175 > 185 電極取出部 22/24 201133701 200 、 400 基板保持裝置 227 座面 327 上部 402 、 420 基板載設台 a 直徑 b、c、d 厚度 e、f、g 寬度 h 向度 i、j 距離 W 半導體晶圓 23/24In the electrostatic chuck of the bipolar mode in Fig. 6, the electrode extraction portion is disposed in the vicinity of the connection portion between the arm 6G and the end point control n, so that the electric power can be supplied together, but is not limited thereto. For example, as shown in FIG. 7, the electrode extraction portions 175, 185, 172, and 182 of the respective electrodes may be designed to be located closest to the electrodes 17G, 18G, 174, and 184, respectively. 176, 186, 173, 183 'and can be supplied separately. The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention. y In the above-described fine form, the upper portion of the cross section of the electrostatic chuck has a shape of three seating surfaces, but is not limited thereto. The following is performed using Figs. 8 to 1G. Fig. 8(a) is a plan view of an end point manipulator having a monthly electric chuck having another cross-sectional shape, and Fig. 8(8) is a cross-sectional view taken along line B_B' of Fig. a). Fig. 9 is a section of the 4 chucks of the end point operation shown in Fig. 8. ® 1 (4) is a cross-sectional view of the evaluation chuck with a further cross-sectional shape. Incidentally, the same configurations as those of the above-described embodiment are denoted by the _ symbol, and the description thereof is omitted. As shown in Fig. 8 and Fig. 9, the static shape of the end point controller ι〇ι and the shape of the surface of the 〇6 can also be rectangular. The electrostatic chuck 2〇5 (206) is composed of an electrode 215 (216) and a wide-body 225 (10) for covering the electrode 215 (216). The electrostatic chuck 2〇5 (2〇6) has a seating surface 227. In such a configuration, the electrostatic wafer is further convex in the third region pLi·°, and the semiconductor wafer can be lowered due to the curvature of the semiconductor wafer W as in the above embodiment. Position of W = equal or due to remuneration (4) Charm or semiconductor wafer w In addition, as shown in FIG. 10, the upper portion 327 of the electrostatic chuck 3G5 having the electrode 315 and the insulator 325 covering the electrode 315 ^ may also be designed The structure of the singular song ©. In the above-described constituent napkin, by providing the convex electrostatic chuck in the third region, it is possible to prevent the semiconductor wafer from being warped due to the warpage of the semiconductor wafer w as in the above-described embodiment. The position is deviated; or the dust generated by the contact or the semiconductor wafer, the dye, etc. Furthermore, since the upper portion 327 has a convex curved shape, the semiconductor wafer W is warped. The semiconductor wafer w is also contacted by the curved surface of the convex upper portion 327, so that the semiconductor wafer can be sufficiently ensured. w Contact area with electrostatic chuck 305. Further, although the illustration is omitted here, the cross-sectional shape of the electrostatic loss plate may be a trapezoid having a shorter upper side than the bottom side. In this case, a second seating surface that is parallel to the bottom surface 1〇 of the upper side of the trapezoid, a second seating surface that follows the distortion of the semiconductor wafer W, and a third seating surface are provided. Therefore, even if the semiconductor wafer W-Qiqu' semiconductor wafer w is in contact with the 2-seat surface and the «3-seat surface of the tapered portion, the contact area can be sufficiently obtained without causing electrostatic chuck failure. It is not easy to produce positional deviation. Further, in the above-described embodiment, each of the electrostatic chucks 5, 6, and 6 is provided in the end point manipulator ± in the plan view, but for example, the arc-shaped electrostatic chuck may be arranged in the radial direction. Coming up. Further, in the above embodiment, the electrostatic loss disc $ provided on the base portion 2 does not extend to the end point manipulator! The shape of the end portion may be set to a shape extending on the concentric circle 73 to the end portion of the control raft 1. Further, in the above embodiment, the electric insulator 25 or the like is covered with the electrode 16 and is in contact with the electrode 16. However, if it is provided between the electrode 16 and the semiconductor wafer w, the electrode 16 may not be in contact with the electrode 16. Further, in the electrostatic chuck of the unipolar type of FIG. 4, the voltages of the same polarity are applied to the electrode extraction portions 132 and 133 together, but they may be applied to the electrode extraction portion 132 and the electrode extraction portion 133. The polarity of the voltage is different' and (4) the double-pole electrostatic chuck on the whole surface is used for 19/24 201133701. Further, in the electrostatic chuck of the unipolar method of Fig. 4, the voltages of the same polarity are applied to the electrode extraction portions i35 and 139 together, and the polarity of the voltage applied to the electrode extraction portion 135 and the electrode extraction portion 139 is applied. It is used as an electrostatic chuck that covers the entire surface of the wafer in a bipolar manner. Further, in the above-described embodiment, the holder is provided with a convex holding member in the hand of the substrate transporting, and the holding member is held as a substrate, but it is not limited to this. For example, as shown in Fig. n, the convex holding body of the present invention may be provided in a substrate mounting table for use in a film forming process or the like. Fig. 1(a) is a plan view showing a substrate holding device including a substrate mounting table 4G2 as a supporting member for supporting a semiconductor wafer W of a substrate to be processed, and Fig. 7(b) is a cross-sectional view thereof. As shown in FIG. 11 , the substrate holding device 400 includes a substrate mounting table 402 ′ and an electrostatic chuck 4 . The electrostatic chuck 4 〇 1 has a surface from the surface of the substrate mounting table 402 to the semiconductor wafer. The convexity on the concentric circles, the slaves. The substrate mounting table 402 has a first region 421 corresponding to the central portion. P, s central portion includes the center of the semiconductor wafer w when the semiconductor wafer w is placed; the second region 422 corresponds to the edge portion of the semiconductor wafer w; and the third region 423' is composed of the first region 421 and the second area seem to be sandwiched. The electrostatic chuck 401 is provided in the third region 423. In such a configuration, the electrostatic chuck 4 can be disposed in the third region 423 to prevent the position of the semiconductor wafer w from being deviated due to the contact of the semiconductor wafer W or the generation of dust due to contact or Contamination of semiconductor wafers, etc. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a substrate transfer device according to an embodiment of the present invention. Figure 2 is a plan view and a cross-sectional view of an end effector constituting a portion of the substrate transfer device shown in Figure 1. 20/24 201133701 Figure 3 is the planar shape of the electrode of the cross-section disk of the electrostatic loss plate of the end point camera shown in Figure 2. Figure 4 is a top view of the static loss of the display mode. Top view of the shape. Top view. 6 is a plan view showing the planar shape of the electrode of the static mode of the bipolar mode. Fig. 7 is a plan view showing the other shape. Cross section of the electrostatic chuck of one of the planar electrodes of the electrostatic chuck of the bipolar mode Fig. 8 is a plan view and a cross-sectional view of the substrate carrying end effector of another embodiment. Figure 9 is a diagram of the endpoint manipulator shown in Figure 8. Figure 10 is a cross-sectional view showing an electrostatic chuck of still another embodiment. Fig. 11 is a schematic plan view and a cross-sectional view showing a substrate holding device according to still another embodiment. [Main component symbol description] 1, 101 End point manipulator 2 Base 3 Fingers 5, 6, 50, 205, 206, 305, 401 Electrostatic chuck 7 Recess 9 Support member 21/24 201133701 10 Bottom surface 11 Slanted side 15 , 16, 115, 116, 170, 174, 180, 184, 215 216, 315 electrode 20 center 21 > 421 first area 22 > 422 second area 23, 423 third area 25, 26, 225, 226 ' 325 Electrical insulator 27 First seating surface 28 Second seating surface 29 Third seating surface 60 Arm 70 Contact area 73 Concentric circle 74 Edge portion 100 Substrate handling device 130 ' 131 ' 134 138 ' 171 > 173 , 176 , 181 , 183 > 186 Wiring 132, 133, 135 139 '175 > 185 Electrode take-out portion 22/24 201133701 200, 400 substrate holding device 227 Seat surface 327 Upper portion 402, 420 Substrate mounting table a Diameter b, c, d Thickness e, f, g width h dimension i, j distance W semiconductor wafer 23/24