TW201133665A - Method for forming bump - Google Patents

Method for forming bump Download PDF

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Publication number
TW201133665A
TW201133665A TW099125929A TW99125929A TW201133665A TW 201133665 A TW201133665 A TW 201133665A TW 099125929 A TW099125929 A TW 099125929A TW 99125929 A TW99125929 A TW 99125929A TW 201133665 A TW201133665 A TW 201133665A
Authority
TW
Taiwan
Prior art keywords
mask
bump
thickness
solder paste
μιη
Prior art date
Application number
TW099125929A
Other languages
Chinese (zh)
Inventor
Seiji Shibata
Tomohiko Kasahara
Shoichi Nakaji
Hiroshi Miura
Original Assignee
Tamura Seisakusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tamura Seisakusho Kk filed Critical Tamura Seisakusho Kk
Publication of TW201133665A publication Critical patent/TW201133665A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11005—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for aligning the bump connector, e.g. marks, spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
    • H01L2224/1132—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps
    • H01L2224/11901—Methods of manufacturing bump connectors involving a specific sequence of method steps with repetition of the same manufacturing step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps
    • H01L2224/11901—Methods of manufacturing bump connectors involving a specific sequence of method steps with repetition of the same manufacturing step
    • H01L2224/11902—Multiple masking steps
    • H01L2224/11903—Multiple masking steps using different masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

This invention provides a method for forming a bump which can increase a height of the bump and restrain a deviation of the height of the bump. The method for forming the bump of this invention includes: printing a solder paste on the electrodes using a first mask to form a first solder paste layer on electrodes; removing the first mask, melting the first solder paste layer and then solidifying the same to form first bumps on the electrodes; printing a solder paste on the first bumps using a second mask showing an oil proof property to form a second solder paste layer on the first bumps; removing the second mask, melting and integrating the first bumps and the second solder paste layer and then solidifying the same to form second bumps on the electrodes.

Description

201133665 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種在例如將晶片尺寸封穿. 喂，㈣安裝於母板時、或者將自㈣J 的半導體晶片裸晶（bare ehip)安裝於安裝基板 板）時等被用作連接電極的凸塊的形成方法。 土 【先前技術】 先前，雖然已知有各種方法來作為凸塊形成方法但 該方法要根據所的技術而分為若干種1如 ^ 以電鐘法或蒸鐘法所形成的焊錫膜的方法、將焊錫球 於電極上的方法、及利用印刷的焊錫膏（solder paste)°的 ，法=。藉㈣些方法設置於電極上⑽錫層或者焊錫球 在回〜爐（reflow oven)中經加熱而暫時地溶融。以此方 式所形成轉舰賴餅顧動體會藉由表面張力而 者突起狀，目此若直接冷㈣賴焊錫熔融 ，或知錫^動體凝固，則可獲得大致球狀或者突起狀的凸 塊0 ^上述凸塊形成方法中，自製造成本的觀點考慮，利 版：:焊錫膏的方法為最佳。其原因在於：由於利用網 供杰8ί^ηΡΓίηίίηβ)而形成焊錫層’故而能夠以簡 備來實施，從而容易低成本化。 几地’該利用網版印獅方法的缺點在於··所獲得的 A .失円度比其他方法所獲得的凸塊的高度更低。這是因 * ”、了防止「焊錫橋」之類的缺陷或焊錫量的偏差等問 201133665 題的發生，必需減少一次印刷中供給至電極上的焊錫的 量。若凸塊的南度低，則於安裝基板的表面存在凹凸或者 產生熱變形的情況下，與凸塊相對應的電極的接合不充分 從而有發生連接不良之虞。 根據以上的理由，在利用網版印刷的凸塊形成方法 中’尋求一種既具有低成本的優點、亦可增大凸塊高度且 可抑制凸塊高度的偏差的凸塊形成方法。對此，先前提出 了各種改良。例如’在下述專利文獻1中，揭示了一種凸 塊形成方法，其藉由重複進行隔著罩幕而將焊錫膏印刷在 基板上之後回流的步驟，而可增大凸塊高度。 先行技術文獻 專利文獻 專利文獻：日本專利特開2002-134538號公報 然而，即便使用上述專利文獻丨所揭示的方法，當在 窄間距化的電極上設置凸塊時，亦難以形成充分高度二凸 塊，從而難以抑制凸塊高度的偏差。 【發明内容】 本發明是#於」:述實際情況而完成的，提供 大凸塊高度且可抑制凸塊高度的偏差的凸塊形成方法。' 本發明的凸塊形成方法包括下述步驟： 置於部的第1罩幕將焊錫fE_ i焊锡膏層 秘多個上述電極上分別形以 b)卸下上述第1罩幕’藉由加熱使上述第1烊踢膏^ 201133665 溶融後凝固，藉此於多個上述電極上分別形成第！凸塊，· C )使用具有多個開C7部且表面顯示出防油性的第2 罩幕將谭錫膏印刷在上述第j凸塊上，而於多個上述第】 凸塊上分別形成第2焊錫膏層；以及 d)卸下上述第2罩幕，於藉由加熱使上述第i凸塊與 上述第2焊錫膏層溶融而一體化後凝固，藉此於多個上述 電極上分別形成比上述第丨凸塊更大的第2凸塊。 [發明的效果] ，據本發明的凸塊形成方法’分開進行焊錫膏的印刷 P _人以上，在第2次以後的印刷步驟中使用表面顯示 度的3第2罩幕，藉此可增大凸塊高度且可抑制凸塊高 為讓本發明之上述和其他目的、特徵和優點能更明顯 3下了文特舉較佳實施例，並配合所附圖式，作詳細說 【實施方式】201133665 VI. Description of the Invention: [Technical Field] The present invention relates to, for example, sealing a wafer size. Feeding, (4) mounting on a mother board, or mounting a semiconductor wafer bare (bare ehip) from (4) J A method of forming a bump used as a connection electrode when mounting a substrate board or the like. Soil [Prior Art] Previously, although various methods were known as the bump forming method, the method was classified into several types of solder films formed by electric clock method or steam clock method according to the technique. The method of soldering the ball on the electrode and using the solder paste of the printing method. The method is provided on the electrode by (4) methods. (10) The tin layer or the solder ball is temporarily melted by heating in a reflow oven. In this way, the formation of the transshipment cake will be raised by the surface tension, so that if it is directly cooled (4) the solder is melted, or the tin is solidified, a substantially spherical or protruding convex can be obtained. Block 0 ^ In the above bump forming method, the method of soldering paste: the solder paste is optimal from the viewpoint of manufacturing cost. This is because the solder layer can be formed by using the net for the purpose of forming a solder layer. Therefore, it is easy to reduce the cost. The disadvantage of the method of using the screen printing lion is that the obtained A is less than the height of the bump obtained by other methods. This is due to the occurrence of the problem of preventing defects such as "solder bridge" or variations in the amount of solder. It is necessary to reduce the amount of solder supplied to the electrodes in one printing. When the southness of the bump is low, when the surface of the mounting substrate has irregularities or thermal deformation, the bonding of the electrodes corresponding to the bumps is insufficient, and connection failure occurs. For the above reasons, in the bump forming method using screen printing, a bump forming method which has the advantages of low cost, can increase the height of the bump, and can suppress variations in the height of the bump can be sought. In response to this, various improvements have been proposed previously. For example, Patent Document 1 discloses a bump forming method in which the step of reflowing solder paste on a substrate after repeating the mask is repeated to increase the bump height. However, even if the method disclosed in the above-mentioned patent document is used, it is difficult to form a sufficient height of two convex when a bump is provided on a narrow-pitched electrode. The block makes it difficult to suppress the deviation of the bump height. SUMMARY OF THE INVENTION The present invention is a bump forming method that provides a large bump height and suppresses variations in bump height, which is completed in the actual case. The bump forming method of the present invention comprises the steps of: placing a first mask on the portion of the solder fE_i solder paste layer on the plurality of electrodes, b) removing the first mask "by heating" The first 烊 kicking cream ^ 201133665 is melted and solidified, thereby forming the first on each of the plurality of electrodes! a bump, C) using a second mask having a plurality of open C7 portions and exhibiting oil repellency on the surface, printing Tan solder paste on the j-th bump, and forming a plurality of the first bumps a solder paste layer; and d) the second mask is removed, and the i-th bump and the second solder paste layer are melted by heating, integrated, and solidified, thereby forming on each of the plurality of electrodes a second bump larger than the above-described second ridge bump. [Effects of the Invention] According to the bump forming method of the present invention, the printing of the solder paste is performed separately, and the third mask of the surface display degree is used in the second and subsequent printing steps. The above-described and other objects, features and advantages of the present invention will become more apparent from the description of the appended claims. 】

離;邊參㈣式—邊說明本發㈣較佳實施形 〜'所參照的圖1A〜圖1D及圖2A〜圖2D 的凸塊形成方法的—實施形態的各步驟的剖面圖Γ x 個電圖1A所示，準備設置著抗钱劑罩幕1及多 部彳罩幕1上配置具有多個開口 罩慕U幕4。此處，多個電極2分觀置於抗蚀劍 以笛t 、多個開口部1&内。而且，於配置第1罩幕4時， 第罩幕4的各開口部4a與所對應的電極2重疊的方式 6 201133665 配置。於圖1A中，第1罩幕4的下表面與抗蝕劑罩幕j 的表面接觸，各電極2面向第1罩幕4的對應的開口部4a 内的大致中央處。 抗蝕劑罩幕1是例如將感光阻焊劑（ph〇t〇sensitive solder resist)膜圖案化而形成。對於基體3而言，圖ία 中使用的是印刷配線基板，但亦可為其他電路基板或大規 模積體電路（large scale integration，LSI)晶片等的電子零 件等。 關於第1罩幕4的材質，並未作特別限定，列舉鎳、 鎳合金、不鏽鋼或者鎳鋼（invar)材等的金屬等。而且， 可使用與後述第2罩幕10相同的材質。 為了使凸塊高度容易增大，較佳為第丨罩幕4的厚度 TM1比電極2的厚度Te更厚。自同樣的觀點考慮，較佳^ 第1罩幕4的開口部如的面積比電極2的面積更大。 第,1罩幕4的厚度Τμι的較佳範圍根據電極2的厚度 TE或形狀等而不同’例如於電極2的上表面為圓形且ς 2的厚度ΤΕ& 5〜50哗的情況下，第1罩幕$的厚度τ 較佳為電極2的厚度w o.mo.o倍，更佳為^〜= 而且’第丨罩幕4的開口部4&的較佳面積範圍根 極2的面積或形狀等而不同。例如於電極2的上表面為圓 ，且其直徑為5〇〜:2〇〇 μιη的情況下，第】罩幕4的口 戸a的直位較佳為電極2的直徑的0.8〜2 5件，ρ γ 1.1〜2.0倍。 · 〇又佳為 其次，如圖1Β所示，在將規定量的焊錫膏5玫置於 201133665 第1罩幕4的整個上表面後，使用刮漿板6將焊錫膏5印 刷在電極2上，而於多個電極2上分別形成第丨焊錫膏層 7。 焊錫膏5未作特別限定，例如可使用含有焊劑與焊錫 粉末的焊錫膏。上述焊劑亦未作特別限定，可使用包含松 香系樹脂的焊劑，或者可使用包含熱固性樹脂的焊劑等。 於使用松香系樹脂來作為焊劑的樹脂成分的情況下，自確 保適當黏度的觀點考慮，較佳為使用二醇（glyc〇丨）系溶 劑等來作為溶劑，更佳為使用二乙二醇單己醚（hexyl出 glycol)、己基卡必醇（hexylcarbit〇1)、丁基卡必醇叫 carbitol )乙一醇單丁醚（ethylene glycol monobutyl ether)。再者，上述適當的黏度是指於溫度25。〇的條件下 藉由MdC0m黏度計所測定出的黏度為150〜450 Pa.s左 右。 其次’卸下第i罩幕4,將設置著抗蝕劑罩幕！、多個 ^極^多個第1蟬錫膏層7的基體3放入至回流爐（未 ^ ，以規定溫度加熱規定時間。此時，焊錫膏5中 =::1=化‘散發。另-方面’焊錫膏5中的焊錫 為大致球上 藉由焊騎融體的表面張力而成 例如以室溫大)起進狀回流射取出基體3， 如圖C)進仃冷部，從而上述焊錫熔融體凝固， 劑的-1八::各電極2上形成著第1凸塊8。此時，焊 ^作為殘留膜9而殘留於第！凸塊8的周圍。 、-人’藉由醇（alcohol)系清洗液等清洗基體3，如 8 201133665 圖ID所示’除去殘留膜9。 然後，如圖2八所示，準備具 面顯示出防油性的第2罩幕1〇，將 ，口部10a且表 抗_罩幕1上。此處，於配置第，幕10配置於 =1〇的各開口部10a與所對應f 10 , ’以第2 重疊的方式配置。於圖从中，第2g2 (第1凸塊8) 触劑罩幕1的表面接觸，各第〗 1G的下表面與抗 的對應的開口部10a内的大致中央|。8面向第2罩幕1〇 關於第2罩幕1G，可使用例如對 罩幕的表面進行防油處理所得的 =有防油性的通用 材料構成的罩幕等^當對不具有防生=具有防油性的 進行防油處理時，鉦需對通用罩I 、通用罩幕的表面 理，較佳為針L 的整個表面進行防油處 油：::通行防 罩幕防油處理方法並未作特別限定:在 ΐίί:ΐ氟的化學吸附單分子膜或氟樹脂的方法， ^者由3氟的非電解複合電鍍等形成防油層的方法等。作 ，上述氟樹脂的具體例’可列舉以聚四氟乙烯 (P〇lyt伽fluoroethylene)為代表的氣系樹脂、及偏二氣乙 婦（vuiyhdene fluoride),系樹脂，例如偏二氟乙稀的均聚 物（homopolymer) ’或偏二氟乙烯與可共聚合的單體（例 如四氟乙稀、氟乙稀、六氟⑽等）的共聚物。此外，還 可在上述氟樹脂中摻雜（曱基)丙烯酸酯系樹脂。 為了使凸塊高度容易增大，較佳為第2罩幕1〇的厚度 201133665 極2的厚度Te更厚。自同樣的觀點考慮，較佳為 10的開口部l〇a的面積比電極2的面積更大。 τ ·+、π2罩幕1〇的厚度Tm2的較佳範圍根據電極2的厚度 2二厘]大等而不同’例如於電極2的上表面為圓形且電極 、又1^為5〜5〇 μιη的情況下，第2罩幕ι〇的厚度 Μ2較佳為電極2的厚度Τε的〇 8〜2〇 〇倍更佳為上卜 ㈣ί °而且’第2罩幕1〇的開口部1〇&的較佳面積範圍 又電極2的面積或形狀等而不同。例如於電極2的上表 面為圓形且其直徑為5〇〜2〇〇 μιη的情況下，第2罩幕10 =開口部10a的直徑較佳為電極2的直徑的〇 8〜3 5倍， 更佳為1.1〜3·〇倍。 而且’第2罩幕1〇的厚度Τμ2較佳為與第丨罩幕4 j厚度丁⑷相同或為該厚度Τμι以上。其原因在於：可進 步增大凸塊高度且可進一步抑制凸塊高度的偏差。自同 ，觀點考慮，第2罩幕1Q的厚度I與第二幕4』 度TMi的比（TM2/Tmi)較佳為L〇以上，更佳為丨丨以上。 自確實防止焊錫橋的觀點考慮，上述比（WTmi) 較佳為5.0以下，更佳為2 〇以下。 其次，如圖2B所示，將規定量的焊錫膏5放置於第2 的整個上表面後，使用刮漿板6將焊錫膏5印刷在 ^ 1凸塊8上’而於多個第1凸塊8上分別形成第2焊錫 膏層11。 這樣，於第2罩幕10的開口部i〇a整體被焊錫膏5 填充後’卸下第2罩幕1G。此時，第2罩幕1G的表面顯 201133665 性’因此剝離良好，第！凸塊8上的焊錫量的偏 差付以抑制。藉此，可抑制凸塊高度的偏差。 為了更有效抑制凸塊高度的偏差，二乙二醇單己醚（焊 錫膏中所包含的普通溶劑）相對於第2轉】 觸角較佳為於25t時為3〇。〜5()。，更佳為％。〜^。面3 接觸角（接觸角Θ)能夠藉由將1 溶劑滴至罩幕上，並 利用Θ/2法而測定。關於測定裝置，例如可使用接觸角計 CA-DT (KyowaInterface Science 公司製造）。 繼而，將設置著抗钱劑罩幕i、多個電極2、多個第i 凸塊8及多個第2焊錫膏層η的基體3放人至 圖示）中，以規定溫度加熱規定時間。此時，焊錫_膏5中 的焊劑的-部分氣化·散發。另—方面，焊錫f 5中的焊錫 ^子溶融而與第丨凸塊8 -體化，並且藉由焊錫炫融體的 表面張力域為大致球狀或者突起狀。錢，自回流爐中 取出基體3,例如以室溫（饥）進行冷卻，從而上 錫熔融體凝固，如圖2C所示，於各電▲ 2上形成比上述 第1凸塊8更大的第2凸塊12。此時，焊劑的—部分作^ 殘留膜9而殘留於第2凸塊12的周圍。 ‘ 其次，藉由醇系清洗液等清洗基體3，如圖2D所示， 除去殘留膜9 〇藉由姻以上的方法形成凸塊可增大凸 塊高度Η(距離抗_罩幕！的上表面的高度），且; 凸塊高度Η的偏差。 以上’對本發明的—實施形態崎了說明，但本發明 並不限錄上述實施形態。例如，亦可於形成第2凸塊12 11 201133665 (圖2D)後，進一步進行圖2A〜圖2D所示的步驟1次 以上’從而形成比第2凸塊12更大的第3凸塊（未圖示）。 而且，上述實施形態中使用的是設置著抗蝕劑罩幕的 基體，但亦可不設置抗蝕劑罩幕，而直接將罩幕配置於基 體上進行印刷。 而且，上述實施形態中設置用於除去焊劑的殘留膜的 清洗步驟，但亦可不除去殘留膜。 而且，上述實施形態中，利用第1罩幕進行印刷時的 焊錫膏與利用第2罩幕進行印刷時的焊錫膏可不必使用相 同的焊錫膏》 【實例】 以下表示實例’對本發明進行更具體的說明。該些實 例不過為本發明中的最佳實施形態的一例，本發明並不受 該些實例所限定。 (所使用的罩幕） 以下表示印刷步驟中所使用的罩幕（均為pR〇cess LAB. MICRON股份有限公製造，圓形開μ的直徑： 95 jim)的詳細情況。再者，以下「接觸角」均為二乙二 醇單己_對於罩幕下表面的接觸角（25。〇。而且，關於 通用罩幕A〜D，因二乙二醇單己_人罩幕下表面，故 而無法進行接觸角的測定。 防油性罩幕A:商品名：奈米罩幕，厚度： 接觸角：40。 30 μιη , 防油性罩幕Β :商品名：奈米罩幕，厚度：37叫，接 12 201133665 觸角：40。 防油性罩幕C :商品名：奈米罩幕，厚度.：43 μιη，接 觸角：40。 防油性罩幕D :商品名：奈米罩幕’厚度.50 μπι， 接觸角：40。 通用罩幕A :商品名：凸塊罩幕，厚度：30 μιη，接 觸角：無法測定 通用罩幕Β :商品名：凸塊罩幕，厚度：37μιη，接觸 角：無法測定 通用罩幕C :商品名：凸塊罩幕，厚度：43 μιη，接觸 角：無法測定 通用罩幕D :商品名：凸塊罩幕，厚度：50 μιη，接 觸角：無法測定 (實例1) 於形成著圓形銅箔焊盤（焊盤直徑：75 μιη，焊盤厚 度：12 μιη，焊盤最小間距：125 μιη)的環氧玻璃基板上 塗佈感光阻焊劑（TAMURAKAKEN股份有限公司製造， 商品名：FINDEDEL DSR_330BGX)，藉由光微影（photo lithography)步驟，以焊盤及其周圍開口的方式圖案化而 形成抗勉劑罩幕（厚度：15〜20 μιη)。其次，於所形成的 抗钱劑罩幕的開口部内（焊盤上），使用防油性罩幕Α並 利用金屬刮漿板印刷焊錫膏（TAMURA KAKEN股份有限 公司製造，商品名：LFSOLDER LF-204)，將峰值溫度設 定為260°C進行回流步驟，從而於焊盤上形成第1凸塊。 13 201133665 其次，於所獲得的第1凸塊上，使用防油性罩幕B並利用 金屬刮漿板印刷焊錫膏（TAMURA ΚAKEN股份有限公司 製造’商品名：LFSOLDER LF-204)，將峰值溫度設定為 26〇°C進行回流步驟，於焊盤上形成第2凸塊，從而獲得試 驗片。關於所獲得的試驗片進行下述評估。將結果表示於 表1中。 (1) 凸塊高度的測定 關於所獲得的第2凸塊’利用光學顯微鏡對距離該抗 ，劑罩幕的上表面的高度（圖2D的凸塊高度H)進行測 疋經測疋的凸塊為焊盤間距125 μιη的區域内的凸塊（總 數.100個）’表1中表示各凸塊的實測值的平均值。 (2) 凸塊高度的偏差的評估 ，於（1)的凸塊高度的測定中所獲得的各凸塊的實測 值而算出標準偏差，並按照下述基準進行評估。 ◎:標準偏差小於1.5μιη 〇 .標準偏差為1·5 μιη以上且小於2.0 μιη △.標準偏差為2.0 μιη以上且小於3 〇 μιη Χ ·標準偏差為3.0 μιη以上 (實例2〜13及比較例1〜κ) 堍π ϋ於實例2〜13及比較例9〜12，除了在實例1的凸 以外成方法中使用分別表示於表1的第1罩幕及第2罩幕 :以與實例1相_方法製作試驗片，且以相同方式 卜了 f估將結果表示於表1。而且，關於比較例1〜8， *實例1的凸塊形成方法中使用分別表示於表i的第 201133665 1罩幕進行第2次印刷步驟以外，以與實例1相同的方法 製作試驗片，且以相同方式進行評估。將結果表示於表1 中。 15 201133665 【表1】The side ginseng (four) type - the side view of the preferred embodiment of the present invention (4) FIG. 1A to FIG. 1D and FIG. 2A to FIG. 2D are the cross-sectional views of the steps of the embodiment. As shown in the electric diagram 1A, the anti-money agent mask 1 and the plurality of enamel masks 1 are prepared to have a plurality of open mask U-screens 4. Here, the plurality of electrodes 2 are placed in the resist sword in a plurality of openings 1 & Further, when the first mask 4 is disposed, the openings 4a of the second mask 4 are disposed so as to overlap the corresponding electrodes 2 6 201133665. In FIG. 1A, the lower surface of the first mask 4 is in contact with the surface of the resist mask j, and each electrode 2 faces the substantially center of the corresponding opening 4a of the first mask 4. The resist mask 1 is formed, for example, by patterning a photosensitive solder resist film. In the case of the base 3, a printed wiring board is used for the drawing, but it may be an electronic component such as another circuit board or a large scale integration (LSI) chip. The material of the first mask 4 is not particularly limited, and examples thereof include a metal such as nickel, a nickel alloy, stainless steel, or an invar material. Further, the same material as that of the second mask 10 to be described later can be used. In order to easily increase the height of the bump, it is preferable that the thickness TM1 of the second mask 4 is thicker than the thickness Te of the electrode 2. From the same viewpoint, it is preferable that the opening portion of the first mask 4 has an area larger than that of the electrode 2. The preferred range of the thickness Τμ of the mask 4 is different depending on the thickness TE or the shape of the electrode 2, for example, when the upper surface of the electrode 2 is circular and the thickness ς 2 is ΤΕ & 5 to 50 ,, The thickness τ of the first mask $ is preferably the thickness of the electrode 2 w o.mo.o times, more preferably ^~= and the preferred area of the opening portion 4& of the second mask 4 is the root 2 The area or shape varies. For example, in the case where the upper surface of the electrode 2 is a circle and the diameter thereof is 5 〇 to 2: 〇〇 μηη, the straight position of the opening a of the mask 4 is preferably 0.8 to 2 5 of the diameter of the electrode 2. , ρ γ 1.1 to 2.0 times. · 〇 〇 为其 为其 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , A second solder paste layer 7 is formed on each of the plurality of electrodes 2. The solder paste 5 is not particularly limited, and for example, a solder paste containing a flux and a solder powder can be used. The flux is not particularly limited, and a flux containing a rosin-based resin or a flux containing a thermosetting resin can be used. When a rosin-based resin is used as the resin component of the flux, it is preferable to use a glycol (glyc®) solvent or the like as a solvent, and more preferably a diethylene glycol single, from the viewpoint of ensuring an appropriate viscosity. Hexyl ether (hexyl out of glycol), hexylcarbitol (hexylcarbit〇1), butyl carbitol called carbitol) ethylene glycol monobutyl ether (ethylene glycol monobutyl ether). Furthermore, the above appropriate viscosity means at a temperature of 25. Under the condition of 〇, the viscosity measured by the MdC0m viscometer is 150~450 Pa.s. Next, 'Remove the i-mask 4, which will be equipped with a resist mask! The base 3 of the plurality of first solder paste layers 7 is placed in a reflow furnace (not heated at a predetermined temperature for a predetermined period of time. At this time, the solder paste 5 =: 1:1 = spurred). On the other hand, the solder in the solder paste 5 is formed by reflowing the substrate 3 from the surface of the solder ball by the surface tension of the solder bump, for example, at room temperature, as shown in FIG. The solder melt is solidified, and the first bump 8 is formed on each of the electrodes 1 to 8:8. At this time, the solder ^ remains as the residual film 9 and remains in the first! The periphery of the bump 8. The human body is cleaned by an alcohol cleaning solution or the like, and the residual film 9 is removed as shown in Fig. ID of 201132665. Then, as shown in Fig. 2, a second mask 1 that exhibits oil repellency is prepared, and the mouth portion 10a is placed on the shield 1 . Here, in the arrangement, each of the openings 10a of the curtain 10 arranged at =1 与 and the corresponding f 10 , ′ are arranged to overlap the second. In the figure, the surface of the 2g2 (first bump 8) contact agent mask 1 is in contact with each other, and the lower surface of each of the first 1G is substantially centered in the corresponding opening portion 10a. 8 facing the second mask 1 〇 Regarding the second mask 1G, for example, a mask made of a general-purpose material having oil-repellent properties obtained by oil-repelling the surface of the mask can be used. When oil-repellent treatment is carried out, it is not necessary to apply the oil-proof oil to the surface of the universal cover I and the universal cover, and it is preferable to carry out the oil-proof oil on the entire surface of the needle L:: In particular, a method of chemically adsorbing a monomolecular film or a fluororesin of ΐίί: fluorinated fluorine, a method of forming an oil-repellent layer by electroless electrolytic plating of 3 fluorine, or the like. Specific examples of the fluororesin include a gas resin represented by polytetrafluoroethylene (P〇lyt fluoroethylene), and a vuiyhdene fluoride, a resin such as vinylidene fluoride. Ho homopolymer 'or a copolymer of vinylidene fluoride and a copolymerizable monomer such as tetrafluoroethylene, fluoroethylene, hexafluoro (10), and the like. Further, a sulfonated resin may be doped with a (fluorenyl) acrylate-based resin. In order to increase the height of the bump easily, it is preferable that the thickness of the second mask 1 2011 201133665 is thicker than the thickness Te of the pole 2. From the same viewpoint, the area of the opening portion 10a which is preferably 10 is larger than the area of the electrode 2. The preferred range of the thickness Tm2 of the τ ·+, π2 mask 1 不同 varies depending on the thickness 2 厘米 of the electrode 2], for example, the upper surface of the electrode 2 is circular and the electrode is 1 5 to 5 In the case of 〇μιη, the thickness Μ2 of the second mask 〇 is preferably 〇8 to 2 times the thickness of the electrode 2 更 ε is more preferably the upper (four) ί ° and the opening 1 of the second mask 1 〇 The preferred area range of 〇& is different depending on the area or shape of the electrode 2. For example, in the case where the upper surface of the electrode 2 is circular and the diameter thereof is 5 〇 to 2 〇〇 μιη, the diameter of the second mask 10 = the opening portion 10a is preferably 〇 8 to 3 times the diameter of the electrode 2 More preferably, it is 1.1~3·〇 times. Further, the thickness Τμ2 of the second mask 1 is preferably the same as or smaller than the thickness 1/4 of the second mask 4 j. The reason for this is that the height of the bump can be further increased and the deviation of the height of the bump can be further suppressed. From the viewpoint of the viewpoint, the ratio (TM2/Tmi) of the thickness I of the second mask 1Q to the second screen 4TM is preferably L〇 or more, more preferably 丨丨 or more. From the viewpoint of surely preventing the solder bridge, the above ratio (WTmi) is preferably 5.0 or less, more preferably 2 Å or less. Next, as shown in FIG. 2B, after a predetermined amount of the solder paste 5 is placed on the entire second upper surface, the solder paste 5 is printed on the bump 8 by using the squeegee 6 to be used in the plurality of first bumps. A second solder paste layer 11 is formed on each of the blocks 8. In this way, after the entire opening portion i〇a of the second mask 10 is filled with the solder paste 5, the second mask 1G is removed. At this time, the surface of the second mask 1G is 201133665, so the peeling is good, the first! The variation in the amount of solder on the bumps 8 is suppressed. Thereby, variation in the height of the bump can be suppressed. In order to more effectively suppress the deviation of the height of the bump, the diethylene glycol monohexyl ether (the ordinary solvent contained in the solder paste) is preferably 3 Å at 25 t with respect to the second rotation. ~5(). More preferably, %. ~^. The contact angle (contact angle Θ) of the face 3 can be measured by dropping a solvent onto the mask and using the Θ/2 method. As the measuring device, for example, a contact angle meter CA-DT (manufactured by Kyowa Interface Science Co., Ltd.) can be used. Then, the anti-money agent mask i, the plurality of electrodes 2, the plurality of i-th bumps 8 and the plurality of second solder paste layers η are placed in the figure 3 and heated at a predetermined temperature for a predetermined time. . At this time, the portion of the flux in the solder paste 5 is vaporized and emitted. On the other hand, the solder in the solder f 5 is melted and the second bump 8 is formed, and the surface tension region of the solder fused body is substantially spherical or protruding. Money, the substrate 3 is taken out from the reflow furnace, for example, cooled at room temperature (hunger), so that the upper tin melt solidifies, as shown in FIG. 2C, forming a larger electrode than the first bump 8 on each electric horn 2 Second bump 12. At this time, the portion of the flux is left as the residual film 9 and remains around the second bump 12. Next, the substrate 3 is cleaned by an alcohol-based cleaning solution or the like, as shown in Fig. 2D, and the residual film 9 is removed. The bump height can be increased by the method of forming a bump or the like (the distance anti-mask is on the upper side) The height of the surface), and the deviation of the height of the bumps. The above description of the embodiments of the present invention has been described, but the present invention is not limited to the above embodiments. For example, after the second bumps 12 11 201133665 ( FIG. 2D ) are formed, the steps shown in FIGS. 2A to 2D may be further performed one time to form a third bump larger than the second bumps 12 ( Not shown). Further, in the above embodiment, the substrate provided with the resist mask is used. However, the mask may be directly placed on the substrate for printing without providing a resist mask. Further, in the above embodiment, the cleaning step for removing the residual film of the flux is provided, but the residual film may not be removed. Further, in the above-described embodiment, it is not necessary to use the same solder paste for the solder paste used for printing by the first mask and the solder paste for printing with the second mask. [Examples] The following examples are shown to more specifically describe the present invention. instruction of. These examples are merely examples of the best mode of the invention, and the invention is not limited by the examples. (The mask used) The following shows the details of the mask used in the printing step (both manufactured by pR〇cess LAB. MICRON Co., Ltd., diameter of circular opening μ: 95 jim). Furthermore, the following "contact angles" are the contact angles of diethylene glycol alone to the lower surface of the mask (25. 而且. Also, regarding the universal masks A to D, due to the diethylene glycol alone Surface, therefore, the contact angle cannot be measured. Oil-repellent mask A: Trade name: Nano-mask, thickness: Contact angle: 40. 30 μιη, oil-proof cover Β : Trade name: nano-mask, thickness: 37 call, pick 12 201133665 Tentacle: 40. Oil-proof cover C: trade name: nano-mask, thickness: 43 μιη, contact angle: 40. Oil-proof cover D: trade name: nano-mask thickness .50 μπι, contact angle: 40. Universal mask A: trade name: bump mask, thickness: 30 μιη, contact angle: can not be measured universal cover Β: trade name: bump mask, thickness: 37μιη, contact Angle: Unable to measure universal mask C: Product name: Bump mask, thickness: 43 μιη, Contact angle: Unusable universal mask D: Trade name: Bump mask, thickness: 50 μιη, Contact angle: Unmeasured (Example 1) Formed a round copper foil pad (pad diameter: 75 μm, soldered A photosensitive solder resist (manufactured by TAMURAKAKEN Co., Ltd., trade name: FINDEDEL DSR_330BGX) was coated on a glass substrate having a disk thickness of 12 μm and a minimum pad pitch of 125 μm, by a photo lithography step. An anti-caries agent mask (thickness: 15 to 20 μm) is formed by patterning the opening of the pad and its surroundings. Secondly, oil repellency is used in the opening portion (on the pad) of the formed anti-money agent mask. The mask was rubbed and printed with a metal squeegee (manufactured by TAMURA KAKEN Co., Ltd., trade name: LFSOLDER LF-204), and the peak temperature was set to 260 ° C to carry out a reflow step, thereby forming a first convex on the pad. 13 201133665 Next, on the first bump obtained, use the oil-repellent mask B and use a metal squeegee to print solder paste (trade name: LFSOLDER LF-204, manufactured by TAMURA ΚAKEN Co., Ltd.) The temperature was set to 26 ° C to carry out a reflow step, and a second bump was formed on the pad to obtain a test piece. The following evaluation was performed on the obtained test piece. The results are shown in Table 1. (1) Measurement of the bump height With respect to the obtained second bump 'the height of the upper surface of the resist mask (the bump height H of FIG. 2D) by the optical microscope, the convexity of the bump was measured. The block is a bump in the area of the pad pitch of 125 μm (total number of .100). The average value of the measured values of each bump is shown in Table 1. (2) Evaluation of the deviation of the height of the bump, in (1) The standard deviation was calculated from the measured values of the respective bumps obtained in the measurement of the bump height, and evaluated according to the following criteria. ◎: The standard deviation is less than 1.5 μm 〇. The standard deviation is 1·5 μm or more and less than 2.0 μm Δ. The standard deviation is 2.0 μm or more and less than 3 〇μιη Χ · The standard deviation is 3.0 μm or more (Examples 2 to 13 and Comparative Examples) 1 to κ) 堍 π 实例 in Examples 2 to 13 and Comparative Examples 9 to 12, except that the first mask and the second mask respectively shown in Table 1 were used in the method other than the convex method of Example 1: The phase was prepared by the method, and the results were shown in Table 1 in the same manner. Further, with respect to Comparative Examples 1 to 8, in the bump forming method of Example 1, a test piece was produced in the same manner as in Example 1 except that the second printing step of the 201133665 1 mask shown in Table i was used. Evaluate in the same way. The results are shown in Table 1. 15 201133665 [Table 1]

第1罩幕 第2罩幕 凸塊高 度（μπ〇 凸塊高度 的偏差 實例1 防油性罩幕A(厚度30 μπ〇 防油性罩幕Β (厚度37 μιη) 41 ◎ 實例2 防油性罩幕Α(厚度30 μιη〕 防油性罩幕C (厚度43 μιη: 43 ◎ 實例3 防油性罩幕Α(厚度30 μιη) 防油性罩幕D(厚度50 μιη) 50 ◎ 實例4 通用罩幕Α (厚度30 μπι) 防.油性罩幕Β (厚度37 μιη) 40 ◎ 實例5 通用罩幕Α (厚度30 μιη) 防油性罩幕C (厚度43 μιη) 43 ◎ 實例6 通用罩幕Α (厚度30 μιη) 防油性罩幕D (厚度50 μιη) 51 ◎ 實例7 防油性罩幕Β (厚度37 μιη) 防油性罩幕Β (厚度37 μιη: 49 ◎ 實例8 防油性罩幕Β (厚度37 μιη) 防油性罩幕C (厚度43 μιη) 54 ◎ 實例9 防油性罩幕Β (厚度37μχη) 防油性罩幕D(厚度50 μιη〕 57 ◎ 實例10 通用罩幕Β (厚度37 μιη) 防油性罩幕Β (厚度37 μιη〕 49 ◎ 實例11 通用罩幕Β (厚度37 μιη) 防油性罩幕C (厚度43 μιη) 53 ◎ 實例12 通用罩幕Β (厚度37 μιη) 防油性罩幕D(厚度50 μιη) 56 ◎ 實例13 防油性罩幕C (厚度43 μιη〕 防油性罩幕Β (厚度37 μιη) 40 〇 比較例 1 防油性罩幕Α(厚度30 μπι: - 26 Δ 比較例 2 防油性罩幕Β (厚度37 μιη: - 34 Δ 比較例 3 防油性罩幕C (厚度43 μιη: - 27 Δ 比較例 4 防油性罩幕D(厚度50 μπι〕 - 24 Δ 比較例 5 通用罩幕Α (厚度30 μιη) - 25 Δ 比較例 6 通用罩幕Β (厚度37 μιη) - 32 Δ 比較例 7 通用罩幕C (厚度43 μιη) - 23 Δ 比較例 8 通用罩幕D (厚度50 μιη) 19 X 比較例 9 防油性罩幕Α(厚度30 μιη) 通用罩幕Β (厚度37 μιη 34 Δ 比較例 10 通用罩幕Α (厚度30 μιη 通用罩幕C (厚度43 μιη) 39 Δ 比較例 11 防油性罩幕Α(厚度30 μιη: 通用罩幕C (厚度43 μιη 46 X 比較例 12 通用罩幕Α (厚度30 μιη) 通用罩幕D (厚度50 μιη) 50 X 16 201133665 =表1所示，本發明的實例與比較例相比，任— 大&地：ί侍良好的結果。由此可知，根據本發明，可增 Μ又且可抑制凸塊高度的偏差。尤其關於第2罩幕 =〜舆Γ革幕的厚度相同或為第1軍幕的厚度以= 實’ 12 ’抑制凸塊高度的偏差的效果優異。 —雖然本發明已啸佳實施例揭露如上，然其並非用以 限=本發明，任何熟習此技藝者，在不脫離本發明之精神 和fc圍内’當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1A〜圖1D是表示本發明的凸塊形成方法的一實施 形態的各步驟的剖面圖。 圖2A〜圖2D是表示本發明的凸塊形成方法的一實施 形態的各步驟的剖面圖。 【主要元件符號說明】 1 :抗蝕劑罩幕 la :抗蝕劑罩幕的開口部 2 :電極 3 =基體 4 :第1罩幕 4a :第1罩幕的開口部 5:焊錫膏 6:刮漿板 7.第1焊锡膏層 17 201133665 8 :第1凸塊 9 :殘留膜 10 :第2罩幕 10a :第2罩幕的開口部 11 :第2焊錫膏層 12 :第2凸塊 Η :凸塊高度 ΤΕ :電極2的厚度 TM1 :第1罩幕4的厚度 TM2:第2罩幕10的厚度 181st cover 2nd cover curtain height (μπ〇 bump height deviation example 1 Oil-proof cover A (thickness 30 μπ〇 oil-proof cover 厚度 (thickness 37 μιη) 41 ◎ Example 2 Oil-proof cover Α (thickness 30 μιη) Oil-repellent cover C (thickness 43 μιη: 43 ◎ Example 3 Oil-repellent cover Α (thickness 30 μιη) Oil-repellent cover D (thickness 50 μιη) 50 ◎ Example 4 Universal cover Α (thickness 30 Μπι) Anti-oily curtain Β (thickness 37 μιη) 40 ◎ Example 5 Universal cover Α (thickness 30 μιη) Oil-repellent cover C (thickness 43 μιη) 43 ◎ Example 6 Universal cover Α (thickness 30 μιη) Oily mask D (thickness 50 μιη) 51 ◎ Example 7 Oil-proof cover Β (thickness 37 μιη) Oil-repellent cover Β (thickness 37 μιη: 49 ◎ Example 8 Oil-proof cover 厚度 (thickness 37 μιη) Oil-proof cover Curtain C (thickness 43 μιη) 54 ◎ Example 9 Oil-repellent cover Β (thickness 37μχη) Oil-repellent cover D (thickness 50 μηη) 57 ◎ Example 10 Universal cover Β (thickness 37 μιη) Oil-repellent cover Β (thickness 37 μιη] 49 ◎ Example 11 Universal cover Β (thickness 37 μιη) Oil-repellent cover C (thickness 4 3 μιη) 53 ◎ Example 12 Universal cover Β (thickness 37 μιη) Oil-repellent cover D (thickness 50 μιη) 56 ◎ Example 13 Oil-repellent cover C (thickness 43 μιη) Oil-repellent cover Β (thickness 37 μιη) 40 〇Comparative Example 1 Oil-repellent cover Α (thickness 30 μπι: - 26 Δ Comparative Example 2 Oil-repellent cover Β (thickness 37 μιη: - 34 Δ Comparative Example 3 Oil-repellent cover C (thickness 43 μιη: - 27 Δ Comparative Example 4 Oil-repellent mask D (thickness 50 μπι) - 24 Δ Comparative Example 5 Universal mask Α (thickness 30 μηη) - 25 Δ Comparative Example 6 Universal mask Β (thickness 37 μιη) - 32 Δ Comparative Example 7 General Mask C (thickness 43 μιη) - 23 Δ Comparative Example 8 Universal mask D (thickness 50 μm) 19 X Comparative Example 9 Oil-repellent mask 厚度 (thickness 30 μηη) Universal mask Β (thickness 37 μιη 34 Δ Comparative example 10 Universal Cover Α (Thickness 30 μη 通用 General Curtain C (Thickness 43 μιη) 39 Δ Comparative Example 11 Oil-repellent cover Α (thickness 30 μηη: Universal Cover C (Thickness 43 μιη 46 X Comparative Example 12 Universal Cover Α (thickness 30 μιη) Universal mask D (thickness 50 μιη) 50 X 16 201133665 = Table 1, shown Examples compared with Comparative Example out either - Big & in: Good results ί paternity. From this, it can be seen that according to the present invention, it is possible to increase the deviation of the height of the bumps. In particular, the second mask = ~ tantalum curtain has the same thickness or the thickness of the first military curtain is excellent in the effect of suppressing the variation in the height of the bump by = '12'. Although the present invention has been disclosed as above, it is not intended to limit the invention, and any person skilled in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A to Fig. 1D are cross-sectional views showing respective steps of an embodiment of a bump forming method of the present invention. Fig. 2A to Fig. 2D are cross-sectional views showing respective steps of an embodiment of a bump forming method of the present invention. [Description of main component symbols] 1 : Resist mask curtain la : Opening portion 2 of resist mask: Electrode 3 = Base 4 : First mask 4a : Opening portion 5 of first mask: Solder paste 6: Squeegee plate 7. First solder paste layer 17 201133665 8 : First bump 9 : Residual film 10 : Second mask 10 a : Opening portion 11 of second mask: Second solder paste layer 12 : Second bump Η : bump height ΤΕ : thickness of electrode 2 TM1 : thickness of first mask 4 TM 2 : thickness of second mask 10 18

Claims (1)

201133665 七、申請專利範圍： 1. 一種凸塊形成方法，包括下述步驟： a) 使用具有多個開口部的第丨罩幕將 的多個電極上— b) 卸下上述第1罩幕’藉由加熱使上述第丨焊錫膏層 熔融後凝固，藉此於多個上述電極上分卿成第】凸塊； c) 使用具有個開口部^表面顯示出防油性的第2 罩幕將焊錫膏印刷在上述第i凸塊上，而於多個上 凸塊上分別形成第2焊錫膏層；以及 …d)卸下上述第2罩幕’藉由加熱使上述第1凸塊與上 述第2焊齡層熔融而—體化後凝固，藉此於多個上述電 極上分別形成比上述第丨凸塊更大的第2凸塊。 2. 如申請專利範圍第1項所述之凸塊形成方法，其中 上述第1罩幕及上述第2罩幕的厚度均比上述電極的 厚度更厚’上述第1罩幕及上述第2罩幕關口部的面積 均比上述電極的面積更大。 3. 如申請專利細第1項所述之凸塊形成方法，其中 .上述第2罩幕的厚度與上述第1罩幕的厚度相同或為 上述第1罩幕的厚度以上。 4. 如申請專利範圍第1項所述之凸塊形成方法，其包 括如下步驟：於上述d)步驟後’進一步進行上述c)及d) 步驟1次以上，藉此於多個上述電極上分別形成比上述第 2凸塊更大的第3凸塊。 201133665 5.如申請專利範圍第1項至第4項中任一項所述之凸 塊形成方法，其中 二乙二醇單己醚相對於上述第2罩幕的表面的接觸角 於25°C時為30°〜50°。 20201133665 VII. Patent application scope: 1. A bump forming method comprising the following steps: a) using a plurality of electrodes of a second mask having a plurality of openings - b) removing the first mask " The second solder paste layer is melted by heating and solidified to form a first bump on the plurality of electrodes; c) soldering is performed using a second mask having an opening portion and exhibiting oil repellency a paste is printed on the ith bump, and a second solder paste layer is formed on each of the plurality of upper bumps; and d) the second mask is removed; the first bump and the first portion are heated by heating 2 The solder age layer is melted and solidified, and the second bumps larger than the second bumps are formed on the plurality of electrodes. 2. The bump forming method according to claim 1, wherein the thickness of each of the first mask and the second mask is thicker than a thickness of the electrode: the first mask and the second mask The area of the curtain opening is larger than the area of the above electrode. 3. The bump forming method according to claim 1, wherein the second mask has a thickness equal to or greater than a thickness of the first mask or a thickness of the first mask. 4. The bump forming method according to claim 1, comprising the steps of: further performing the above steps c) and d) one or more times after the step d), thereby applying to the plurality of electrodes A third bump larger than the second bump is formed separately. The method for forming a bump according to any one of claims 1 to 4, wherein a contact angle of diethylene glycol monohexyl ether with respect to a surface of the second mask is 25 ° C The time is 30 ° ~ 50 °. 20
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