201128791 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種化學水浴單面鍍膜方法及裝置，尤指一種 使基板的一待加工面上圍成一封閉的容納空間，於容納空間灌入 一需要量的前趨物溶液，並置入一熱水槽中，即可於基板的單面 沉積化合物薄膜，進而達到簡化製程，節省工時，提高沉積鍍膜 σσ質，大幅減少前趨物溶液的使用量，減少材料浪費及避免環境 鲁 污染’而能有效降低成本之目的者。 【先前技術】 按習知電子產品所使用到的化合物薄膜，都會應用到化學沉 積技術。例如習知鋼銦鎵硒CIGS型薄膜太陽能電池（其基本結構 如圖1所示），因為硫化鎘是直接且為寬能隙的材料，硫化鎘薄膜 可以作為薄臈太陽能電池的緩衝層，而且利用化學水浴沉積法來 /儿積硫仡鎘薄膜，不僅製程簡單，成本低廉，而且其膜厚相當地 φ均勻，可供製成高效率的薄膜太陽能電池。 習知化學浴沉積法（Chemical Bath Deposition, CBD)是一種 ㊉見的製備半導體薄朗技術，亦為化學沉積技術的-種。習知 的主要方法疋將整個基板完全浸入含有金屬離子及〇Η_ ϋ2_ 離子的化學水魏巾，藉由洲水溶㈣溫度及賊，使金屬離 子與0『、s2-、Se2-離子產生化學反應，而使化合物半導體薄膜沉積 在基板上'-般化學水浴沉積法，是一種非真空的沉積半導體薄 膜的方法，其工作溫餘低，触簡單，易於大量製造，可有效 201128791 降低成本。再者，習知技術中使用化學水浴沉積法沉積成型的半 導體薄膜有：硫化鎖s、德鎖Se、碼化鋅驗、氧化鋅如〇、 硫化銦InS、栖化銦InSe、硫化銅CuS、碼化鋼㈣、硫化錯邮等 半導體薄膜，其中已有許多的半導體薄膜被使用在 M〇-CIS(CIGS)-Buffer iayer-Zn〇結構的CIS(CIGS)系薄膜太陽能 電池中（如圖1所示），而當作緩衝層（Buffer layer)，最常見 的則是以硫化親S«CIS(CIGS)系薄膜太陽能電池的緩衝層。 鲁 由於省知的化學浴沉積法(Chemical Bath Deposition，CBD) 操作的方式，係將基材浸人化學練巾_ —定時間，而在基材 表面沉積形鱗導體_。但習知的化學浴_設備，係使基材 完全浸入化學藥液之中，導致基材雙面都會沉積鑛膜，而實際應 用上只需要基板-面題，若兩面鍍驗形成龍的浪費，造成 成本增加。雖然，習知技術忖針對軟f可撓性課基板做單面 鐘膜的技術，如台灣新型第_4〇3號專利“一種挽性基材連續式 •化學水浴沉積之裝置，，，其係藉著一加熱傳動裝置的一加熱器， 及一側的基材滾捲單元’使基材連續輸人時可被加熱傳動裝置暫 時·料’同時輸入化學藥財，藉加熱器配合化學藥液的反應， 而於可撓性基材沉積氧化物薄膜。然而，前述的專利案所揭露的 内容，係針對可撓性塑膠基板進行單面鑛膜，與本發明的技術手 段完全不相同，而無法相提並論。 【發明内容】 本發㈣—目的，在提供—種可縣滅已賴於基板上的 201128791 半導體薄膜進行單面沉積化合物薄膜’藉以簡化製程，節省工時， 提尚沉積鍍膜品質，大幅減少前趨物溶液的使用量，減少材料浪 費及避免環境污染，而能有效降低成本的化學水浴單面鍍膜方法 及裝置。本發明人因鑑於習知技術中’尚無一種可對硬質基板或 硬質基板上之化合物薄膜進行有效地單面鍍臈之技術，本發明人 乃設計使基板的一待加工面上圍成一封閉的容納空間，使容納空 間可供填灌入一需要量而用以沉積化合物薄膜的前趨物溶液，使 φ 刚趨物溶液覆蓋住基板的待加工面，再將基板置入一熱水池中， 藉由熱水的加熱，使前趨物於基板的該面上沉積化合物薄膜。 達成此目的之技術手段，係準備有一固定組件包括有一第一 密封框條、-基框、-蓋板及一迫緊手段，利用蓋板、基板及第 一密封框顏成-容納空間，並錢f手段妙固定，再於該容 、’内工間/瞿入$要量的别趨物溶液，將基框連同基板及前趨物溶 液置入-熱水槽之熱水中進行化學水舰積程序，藉由熱水的溫 φ度作用，即可使前趨物溶液於基板上沉積一化合物薄膜。 本發邮二目的，在提供—種可有效保絲板的化學水浴單 面鑛膜的裝置。基於上述第—目的中的技術手段，本發明加設有 一第二密封框條，以第二密封框條配合第一密封框條上下失住基 板周緣，以避免基板直接與蓋板及基框接觸，並形成緩衝，故可 有效避免基板受損。 本么月第—目的’在提供—種可有效保護基板，簡化結構及 確保密封性的化學水浴單面_的裝置。基於上述第-目的中的 201128791 技術手段，本發明加設有一第二密封框條’且第二密封框條與第 一密封框條以橡膠一體成型，並於内環面形成一嵌槽，可供基板 周緣嵌入，使第二密封框條配合第一密封框條上下夾住基板周 緣，不僅避免基板直接與蓋板及基框接觸，形成緩衝，以有效避 免基板受損。 【實施方式】 壹·本發明的構想及原理 • 由於習知化學水浴沉積技術，是準備整桶的前趨物溶液，再 將基板置入桶内的前趨物溶液中，藉由製程條件的控制，而使前 趨物溶液於基板上沉積一層金屬化合物薄膜。然而，前述習知的 技術方法’實際操作時會產生下列的缺失： 1 ·雙面鍍膜，造成浪費：基板整個浸入前趨物溶液，兩面 均與前趨物溶液接觸，而於兩面都沉積化合物薄膜，造成浪費。 2 ·使用後的前趨物溶液，組成之化學成份會改變，無法達 #到再-人况積的仏準需求，欲再行沉積加工，一種方式係須整桶更 換新的⑴趨物*液’然而卻造成材料的浪費且會致使用後的前 趨物溶液之化學物財魏理，而污_竟，另―種方式則是分 析成伤比率’再添加相對短缺的成份，補足達到標準需求，再行 ’儿積加工細’分析及補雄為浪費卫時，並不符合經濟效益。 3再者’ S知技術為了便於化學水浴沉積法的進行，例如 便於基板於賊物溶㈣旋轉，—般毅絲板以直接的方式浸 入前趨齡液L，整個基板由上至下各雜承受前趨物溶 201128791 液的壓力便不同’會造成沉積之化合物薄膜的厚度不约的現象， 大大地降低沉積鍍膜的品質。 為了解決上述的問題及缺失，本發明人乃設計一種可對其板 進行單面沉積化合物薄膜的方法及裝置，尤其是可應用於太陽能 光電半導體薄膜的沉積加工。 本發明主要的構想’疋设計使基板的一待加工面上圍成一封 閉的容触間，使容納空間可供填灌人—需要量而用以沉積化合 • 物薄膜的前趨物溶液，使前趨物溶液覆蓋住基板的待加工面，再 將基板置人-熱水池中，藉由熱水的加熱，使前趨物於基板的該 面上沉積化合物薄膜。如此即可有效解決上述的缺失。亦即，利 用前述本發明的構想，便可達成以下的功效： 1♦單面鍍膜：基板僅-面為待加工面與前趨物溶液接觸， 故可達到單面鍍膜的功效。 2 ·減少前趨物溶液的·及浪費，^可確保前趨物溶液的 藝組成成份均-，提升沉積品質：基板之待加工面的容納空間其 容量只要以有效沉積-層化合物_的前趨物溶液即可，前趨 物溶液的使用量極少，不會造成浪費，而且灌入容輕間的前趨 物溶液的組成成份是可確保均一。 3 .基板可平置進行化學水浴沉積，確絲板整個等加工面 所沉積化合物細的厚度均一，以提狀積加工品質。 4 .基板待加工面上封·納空間灌人需要量的前趨物溶 液’即可將之置入熱水槽中進行化學沉積，利用熱水的熱量，可 201128791 加快化合物薄膜的沉積速率，節省工時，相對降低成本。 A ·本發明的具體實_及較佳實施例 為便於審查貞詳細轉及本發明技術領域巾熟習此技術者能 據以實施，兹將上述無的具體實施例詳述如后。 2· 1本發明的基本具體實施例 明參看圖1、2所7F ’本發明之化學水浴單面鍍膜技術的第 -種具體實_ ’係包括有下列基本的步驟·· _ ⑷準備有一固定組件10 ’其用以固定-基板20，基板20具 有相反朝向的頂面21及底面22,基板20的頂面 21為一待加工面 210 ’藉固疋組件1〇與基板2〇之待加工φ 21配合而圍成一賴 的容納空間Η，該固定組件10包括有： 具有彈性之第-密封框條12，其底部臨近其内環壁形成一 沿著該内環壁環繞的第一壓合段12〇 ; 一基框13 ’其包括有成型為-體的-框形邊板13G及-框形底 φ板⑶’ δ玄底板⑶之外周邊連接於該邊板⑽的底邊，使該邊板⑽ 内面與该底板131之頂面圍成一框形容槽既； 一蓋板14，其供與該基框13及該基板20相對蓋合；及 迫緊手段15 ’其提供該基框13之該底板131與該蓋板14 相互靠合的一迫緊力量； (b) 將第一密封框條12之第一壓合段120貼合於基板20之待加 工面21的周緣； (c) 將該第一密封框條12連同該基板2〇周緣置入該基框13之 201128791 該容槽132内； (d) 將該蓋板14與該基框13對合，使該蓋板14之周緣貼壓於該 第一密封框條12的頂部，並使該蓋板14、該基板2〇及該第一密封 框條12圍成一容納空間11 ; (e) 以該迫緊手段15使該蓋板14向該基框13之該底板131靠合 並迫緊固定’並使該第一密封框條12之該第一壓合段12〇迫緊該基 板20的頂面21之周緣’以該第一密封框條12迫緊於該基板2〇及該 鲁 蓋板14之間’進而使該容納空間11有效密封； (f) 於該容納空間11灌入一需要量的前趨物溶液16，該前趨物 溶液16係供於該基板2〇之該待加工面21〇沉積一化合物薄膜； (g) 將該基框13連同該基板2〇置入一熱水槽3〇之熱水31中以 進行化學水浴沉積程序，藉由該熱水31的溫度作用，而使該前趨 物溶液17於該基板20上沉積一化合物薄膜。 2. 2本發明的第一較佳實施例 鲁 如圖3、4所示，基於前述的基本具體實施例，為了使玻璃 基板20之底面22周緣也受到彈性緩衝支持，本發明的第一種較佳 實施例，係配合設有一具有彈性之第二密封框條121，第二密封框 條121的頂部臨近其内環壁形成一沿著該内環壁環繞的第二壓合 段122。而在前述步驟(b)的操作中，則將第一密封框條12之第一 壓合段120貼合於基板20之頂面21(即待加工面21〇)的周緣，及第 二密封框條121之第二壓合段122貼合於基板2〇之底面22的周緣。 而在前述步驟(c)的操作中，則將第二密封框條121連同第一密封 201128791 框條12絲板20周緣置入基框13之容槽132内；而在前述步驟(e) 的操作中，便可使該第一密封框條12之該第一壓合段12〇與該第二 也、封框條121之該第二壓合段122分別迫緊該基板2〇的頂面21之周 緣及底面22之周、緣。因此，藉由第二密封框條121的設置，可避免 基板20直接與基框13接觸，獲得緩衝支持，避免基板2〇受損。 2.3本發明的第二較佳實施例 如圖5至7所示，基於前述的基本具體實施例，為了使玻璃 φ 基板20之底面22周緣也受到彈性緩衝支持，以及節省組裝之工時 及提咼容納空間11的密閉性，本發明的第二種較佳實施例，係配 合設有一具有彈性之第二密封框條121，第二密封框條121的頂部 臨近其内環壁形成一沿著該内環壁環繞的第二壓合段丨22，而且第 一密封框條12與第二密封框條121係以橡膠一體成型，僅留第一壓 合段120與第二壓合段122之間具有間距而形成一嵌槽，嵌槽 123可供該基板20的周緣喪入。而在前述步驟(b)的操作中，則將 鲁第一密封框條12之第一壓合段120貼合於基板20之頂面21(即待加 工面210)的周緣’及第二密封框條12ι之第二壓合段丨22貼合於基 板20之底面22的周緣，使基板2〇嵌入嵌槽123内。而在前述步驟(c) 的操作中’則將第二密封框條121連同第一密封框條12與基板2〇周 緣置入基框13之容槽132内；而在前述步驟(e)的操作中，便可使 該第一密封框條12之該第一壓合段120與該第二密封框條121之該 第二壓合段122分別迫緊基板20的頂面21之周緣及底面22之周 緣。因此，藉由第一密封框條12與第二密封框條121成型為一體， 201128791 不僅可避免基板20直接與基框13接觸，獲得緩衝支持，避免基板 20受損，而且只要將基板2〇周緣嵌入嵌槽丨23，即可與第一密封框 條12與第一密封框條121組合，節省組裝之工時，更可提高容納空 間11的密閉性，以有效避免前趨物溶液16洩出。 2.4本發明的第三較佳實施例 如圖1、3及5所示，基於前述的基本具體實施例，為了使 用者將剞趨物溶液16灌入容納空間η，以有效避免前趨物溶液托 • 溢出，及受周遭環境污染，本發明的一種較佳實施例，係於蓋板 14上設有一穿孔14〇，經由穿孔14〇可供前趨物溶液16被充入容納 空間11，穿孔140可以一塞體141封閉。 2.5本發明的迫緊手段之具體實施例 如圖1、3及5所示，基於前述的基本具體實施例，本發明 迫緊手段15的一種具體實施例，係包括複數個夾具15〇，每一該夾 具150包括有一上扣部151、一下扣部152及一鎖緊手段，夾具15〇 • 附裝於基框13上時，上扣部151位於蓋板14頂面，下扣部152位於 該基框13之該底板131底面，上扣部151與下扣部152為一體成型並 呈师，而鎖緊手段係於上扣部151設一貫穿的螺孔153，並設有一 螺栓154 ’螺栓154螺鎖於螺孔153，螺栓154的底端頂推蓋板14， 而使蓋板14向基框13之底板131靠合，進而夾合固定基框13與蓋板 14 〇 請配合參看圖8所示’本發明迫緊手段15的一種具體實施 例，係包括複數個夾具150 ’每一夾具15〇包括有一上扣部、一 201128791 下扣部152及一鎖緊手段，夾具150附裝於基框13上時，上扣部151 位於蓋板14頂面，下扣部152位於基框13之底板131底面，上扣部 151與下扣部152為分體，二者可相互套接而呈可相對移動狀態， 上扣部151與下扣部152連設有一快拆結構，利用快拆結構可控制 是上扣部151與下扣部152相對靠合，以分別推移蓋板μ與基框 13，而使蓋板14與基框13固定。前述的快拆結構，主要係於上扣 部151與下扣部152穿設一軸桿155 ’軸桿155—端套設螺帽156，另 φ 一端以一轉軸157而樞接一扳柄158的樞接部159，樞接部159周面 相對轉軸157的轴心呈非圓形且逐漸偏離該軸心的曲面mo，當扳 柄158相對轴桿155旋轉至一角度，使樞接部159之曲面160較遠偏 轉軸157之軸心的部位接觸上扣部151，即可將上扣部151靠向下扣 部152，進而將蓋板14與基框13夾合固定。 參·本發明之操作 請參看圖9至1 1所示，本發明操作時，其基板2〇可為玻璃， • 或是基板的頂面21(即待加工面210)上已鍍覆有一層太陽能光 電半導體薄膜22，若是基板20上已鍍覆有一層太陽能光電半導體 薄膜22 (例如CIGS系薄膜或CIS系薄臈），則利用本發明可在太陽 能光電半導體薄膜22上沉積一層化合物薄膜23，其化合物薄膜23 為一硫化鎘CdS薄膜’以做為該太陽能半導體薄膜22之緩衝層。操 作步驟如下： 先將一體的第一密封框條12與第二密封框條121套於基板的 周緣，使基板20周緣嵌入嵌槽123，並使第一密封框條12的第一壓 [s] 12 201128791 合段120貼合於基板20之頂面21周緣，而第二密封框條121的第二 壓合段122貼合於基板20之底面22周緣； 將第一密封框條12與第二密封框條121連同基板2〇周緣置入 容槽132内； 將該蓋板14與基框13對合，使蓋板14之周緣貼壓於第一密封 框條12的頂部，並使蓋板14、基板2〇及第一密封框條12圍成一容 納空間11 ; φ 以夾具150附裝於基框，使下扣部貼於基框之底板的底面’而 上扣部151位於蓋板14上方，再鎖緊螺栓154，以螺栓154頂推蓋板 14向基框13之底板131靠合，使蓋板14、基框13與基板2〇一併固 定，並使該第一密封框條12迫緊於該基板2〇及該蓋板14之間，以 使該容納空間11有效密封，且使第二密封框條121迫緊於基板2〇及 基框13之底板131之間； 自穿孔140而將用以沉積化合物薄膜23(即硫化鑛⑽薄膜）之 φ 需要畺的則趨物溶液17，灌入容納空間Π内，再以塞體141封閉住 穿孔140，因本操作實例，係欲沉積硫化鎘C(jS薄膜，故前趨物溶 液17包括有鎘離子溶液、硫離子溶液、複合劑溶液及緩衝溶液， 其中，鑛離子溶液係選自氯化録、硫酸鎘、醋酸鎘及破化鎘其中 一種’硫離子溶液係選自硫脲、硫代乙醯胺及硫酸其中一種，複 合劑溶液係選自氨水、NTA、EDTA&Ethylenediamine其中一種， 而緩衝溶液係選自氯化銨、醋酸銨及硫酸銨其中一種，本操作實 例，前趨物溶液17係由硫酸鎘、硫脲、氣化銨及氨水混合而成； 201128791 及 將基框13連同基板20置入-熱水槽3〇之熱水31中以進行化學 水浴沉_序，躺使猶趨物溶贿於基板默太陽能光電半 導體薄膜22上沉積厚度約30〜50_化合物薄膜23(即硫化鑛⑽ 薄膜）。 肆•結論 藉由上述之詳細說明，可歸納本發明具有下列幾個主要優點 1·單面鑛膜：基板僅-面為待加工面與前趨物溶液接觸， 故可達到單面鍍膜的功效。 2.減少前趨物溶液的使用及浪f，且可確保前趨物溶液的 組成成份均-，提升沉積品f:基板之待加I面的容納空間，发 容量只要足以有魏積-層化合物_的前趨物溶液即可，前趨 物溶液的使用量極少，不會造成浪費，而且灌入容納空間的前趨 物溶液的組成成份是可確保均一。 3基板可平置進订化學水浴沉積，確保基板整個等加工面 所沉積化合物薄膜的厚度均―，以提升沉積加工品質。 4 ·基板待加工面上咖容納空㈣人需要量的前趨物溶 液’即可狀置人熱水針進行化秋積，湘熱水賴量，可 加快化合___速率，科工時，彳目對降低成本。 以上所述’僅為本發明夕"όΓ At P1 仃的>、體實施例，並非用以限定 本發明之·_，凡舉依射列申料·騎述 徵以及其㈣岭之祕魏料財施，t觀紐本發明i 201128791 專利範圍内。 本發明所频狀对料概jg之驗魏，未見於同類 技術而具新碰，且較習知技術具進步性，並能供產業充份利用， 已符合發明專利要件，爰依法具文提对請，謹請鈞局 專利’以維護本申請人合法之權益。 ""卞 【圖式簡單說明】 圖1為本發明第一種實施例之分解示意圖； • 圖2為本發明第一種實施例之斷面示意圖； 圖3為本發明第二種實施例之分解示意圖； 圖4為本發明第二種實施例之斷面示意圖； 圖5為本發明第三種實施例之分解示意圖； 圖6為本發明第三種實施例之斷面示意圖； 圖7為本發明圖6中擷自圓a之放大示意圖； 圖8為本發明之迫緊手段的另一種實施例示意圖； 鲁 ® 9為本發明之操作流程示意圖； 圖10為本發明於基板上鍍覆有化合物薄膜之示意圖； 圖11為本發明圖1〇令擷自圓B之放大示意圖； 圖1 2為習知CIGS薄膜太陽能電池示意圖。 【主要元件符號說明】 固定組件10 第一壓合段120 容納空間11 第一密封樞條u 第一密封框條121第一壓合段 [s] 15 201128791 嵌槽123 基框13 邊板130 底板131 容槽132 蓋板14 穿孔140 塞體141 迫緊手段15 夾具150 上扣部151 下扣部152 螺孔153 螺栓154 軸桿155 螺帽156 &轉軸157 扳柄158 樞接部159 曲面160 前趨物溶液17 基板20 頂面21 待加工面210 底面22 熱水槽30 熱水31201128791 VI. Description of the Invention: [Technical Field] The present invention relates to a chemical water bath single-side coating method and apparatus, and more particularly to a method for enclosing a surface to be processed of a substrate into a closed receiving space for filling the receiving space By entering a required amount of the precursor solution and placing it in a hot water tank, a compound film can be deposited on one side of the substrate, thereby simplifying the process, saving man-hours, improving the σσ quality of the deposited coating, and greatly reducing the precursor solution. The amount of use, reducing material waste and avoiding environmental pollution, and can effectively reduce costs. [Prior Art] Compound films used in conventional electronic products are applied to chemical deposition techniques. For example, the conventional steel indium gallium selenide CIGS thin film solar cell (the basic structure is shown in Figure 1), because cadmium sulfide is a direct and wide energy gap material, cadmium sulfide film can be used as a buffer layer for thin tantalum solar cells, and the use of chemistry The water bath deposition method/child sulphide cadmium film is not only simple in process, low in cost, but also has a uniform film thickness of φ, which can be used for making high-efficiency thin film solar cells. The Chemical Bath Deposition (CBD) is a kind of semiconductor thinning technology, which is also a kind of chemical deposition technology. The main method of the prior art is to completely immerse the entire substrate in a chemical water Wei towel containing metal ions and 〇Η_ϋ2_ ions, and chemically react the metal ions with the 0′, s2-, Se2- ions by the temperature of the water (4) and the thief. The compound semiconductor thin film is deposited on the substrate. The general chemical water bath deposition method is a non-vacuum method for depositing a semiconductor thin film. The working temperature is low, the touch is simple, and it is easy to mass-produce, which can effectively reduce the cost of 201128791. Furthermore, conventional semiconductor films deposited by chemical water bath deposition in the prior art include: vulcanization locks, de-Se, zinc-coded tests, zinc oxide such as antimony, indium sulfide InS, indium indium, and copper sulfide CuS. Semiconductor films such as coded steel (4), vulcanized mislabeling, etc., many of which have been used in MIS-CIS (CIGS)-Buffer iayer-Zn〇 structure CIS (CIGS) thin film solar cells (Figure 1 As shown in the figure), as a buffer layer, the most common one is a buffer layer of a vulcanized S«CIS (CIGS) thin film solar cell. Due to the well-known chemical bath deposition (CBD) operation method, the substrate is immersed in a chemical polishing towel for a certain time, and a scaled conductor _ is deposited on the surface of the substrate. However, the known chemical bath_equipment is to completely immerse the substrate in the chemical liquid, which causes the mineral film to be deposited on both sides of the substrate, but the substrate-face problem is only needed in practical applications. If the two sides are plated to form a waste of dragons , causing an increase in costs. Although, the prior art is a technique for making a single-sided clock film for a soft f flexible circuit substrate, such as the Taiwan Patent No. 4, No. 3, "a continuous substrate chemical water bath deposition device, By a heater of a heating transmission device, and a substrate rolling unit on one side, when the substrate is continuously input, the heating transmission device can be temporarily charged and the chemical medicine can be input at the same time, and the heater is combined with the chemical medicine. In the reaction of the liquid, an oxide film is deposited on the flexible substrate. However, the disclosure of the aforementioned patent is directed to a single-sided mineral film for a flexible plastic substrate, which is completely different from the technical means of the present invention. [Invention] The present invention provides a single-sided deposition of a compound film on the substrate of the 201128791 semiconductor film, which can be used to simplify the process, save man-hours, and improve the quality of deposition coating. A chemical water bath single-side coating method and apparatus capable of reducing the amount of the precursor solution, reducing material waste and avoiding environmental pollution, and effectively reducing the cost. In the prior art, there is no technology for effectively performing one-side rhodium plating on a hard substrate or a compound film on a rigid substrate. The inventors have designed to enclose a sealed surface of a substrate to be processed. Having a receiving space for filling a desired amount of a precursor solution for depositing a compound film, so that the φ rigid solution covers the surface to be processed of the substrate, and then placing the substrate in a hot water pool, by The heating of the hot water causes the precursor to deposit a film of the compound on the surface of the substrate. The technical means for achieving this purpose is to prepare a fixing component comprising a first sealing frame strip, a base frame, a cover plate and a pressing means The cover plate, the substrate and the first sealing frame are used to form a space for accommodating, and the money f is fixed, and the base frame and the substrate are combined with the volume and the amount of the solution. And the precursor solution is placed in the hot water of the hot water tank to carry out a chemical water ship program, and by the action of the temperature of the hot water, the precursor solution can deposit a compound film on the substrate. Purpose, in providing The utility model relates to a chemical water bath single-sided mineral film device for protecting the silk plate. Based on the technical means in the above-mentioned first object, the invention is provided with a second sealing frame strip, and the second sealing frame strip is matched with the first sealing frame strip up and down. The periphery of the substrate prevents the substrate from directly contacting the cover plate and the base frame, and forms a buffer, so that the substrate can be effectively prevented from being damaged. This month's first-purpose 'is provided to effectively protect the substrate, simplify the structure and ensure the sealing property. The device of the chemical water bath single-sided_. According to the technical means of 201128791 in the above-mentioned first object, the present invention is provided with a second sealing frame strip' and the second sealing frame strip and the first sealing frame strip are integrally formed with rubber and are inside. The annular surface forms a recessed groove for embedding the periphery of the substrate, so that the second sealing frame strip cooperates with the first sealing frame strip to sandwich the periphery of the substrate, so as not only avoids the substrate directly contacting the cover plate and the base frame, thereby forming a buffer to effectively avoid the substrate. [Embodiment] 构想· The concept and principle of the present invention • Due to the conventional chemical water bath deposition technique, a pre-body solution of the whole barrel is prepared, and then the substrate is placed in the barrel. In solution, by controlling the process conditions, the deposition of the precursor solution of a metal compound film on the substrate. However, the above-mentioned technical method 'the actual operation will produce the following defects: 1 · Double-sided coating, causing waste: the substrate is entirely immersed in the precursor solution, both sides are in contact with the precursor solution, and the compound is deposited on both sides. The film is wasteful. 2 · After using the precursor solution, the chemical composition of the composition will change, and it is impossible to reach the demand of #再再-人况, and to perform deposition processing, one way is to replace the new one with a whole barrel (1) The liquid 'has caused a waste of material and will cause the chemical of the precursor solution after use, and the pollution is _, the other way is to analyze the rate of injury' and then add the relative shortage of ingredients to make up The standard demand, and then the 'child's processing fine' analysis and the supplement of the male to waste Wei, is not in line with economic benefits. 3 In addition, 'S know the technology in order to facilitate the chemical water bath deposition method, for example, to facilitate the substrate to dissolve in the thief (four), the general silk plate is directly immersed in the pre-aged liquid L, the entire substrate from top to bottom The pressure of the precursor solution 201128791 is different, which will cause the thickness of the deposited compound film to be inconsistent, which greatly reduces the quality of the deposited coating. In order to solve the above problems and deficiencies, the inventors have devised a method and apparatus for depositing a compound film on one side of a board, and particularly, it is applicable to deposition processing of a solar photovoltaic semiconductor film. The main idea of the present invention is that the design of the substrate is such that a surface to be processed of the substrate encloses a closed contact space, so that the accommodation space can be filled with a filling body - a precursor solution for depositing a compound film The precursor solution covers the surface to be processed of the substrate, and then the substrate is placed in a hot pool, and the precursor film deposits a compound film on the surface of the substrate by heating with hot water. This can effectively solve the above-mentioned shortcomings. That is, with the above concept of the present invention, the following effects can be achieved: 1♦ Single-sided coating: The surface of the substrate is only in contact with the precursor solution to be processed, so that the effect of single-sided coating can be achieved. 2 ·Reducing the waste of the precursor solution and ensuring that the composition of the precursor solution is uniform - and the deposition quality is improved: the capacity of the substrate to be processed is as long as the effective deposition layer compound The trending solution can be used, the amount of the precursor solution is extremely small, and no waste is caused, and the composition of the precursor solution poured into the light-weight chamber can ensure uniformity. 3. The substrate can be placed flat for chemical water bath deposition, and the thickness of the deposited compound on the whole processing surface of the silk plate is uniform, so as to improve the processing quality. 4. The substrate on the surface to be processed is sealed and the required space for the precursor solution can be placed in a hot water tank for chemical deposition. With the heat of hot water, the deposition rate of the compound film can be accelerated by 201128791, saving Working hours, relatively lower costs. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to facilitate the review, the detailed description of the present invention can be implemented by those skilled in the art, and the specific embodiments described above are described in detail below. 2· 1 Basic Embodiment of the Invention Referring to Figures 1 and 2, 7F, the first embodiment of the chemical water bath single-side coating technology of the present invention includes the following basic steps. _ (4) Preparation for a fixed The component 10' is used for fixing the substrate 20, and the substrate 20 has an oppositely facing top surface 21 and a bottom surface 22. The top surface 21 of the substrate 20 is a surface to be processed 210' to be processed by the substrate 1 and the substrate 2 The fixing member 10 includes: an elastic first-seal frame strip 12 having a bottom portion adjacent to the inner ring wall to form a first pressure surrounding the inner ring wall A base frame 13' includes a frame-shaped side plate 13G and a frame-shaped bottom plate (3)'. The outer periphery of the δ floor (3) is connected to the bottom edge of the side plate (10). The inner surface of the side plate (10) and the top surface of the bottom plate 131 are surrounded by a frame-shaped cavity; a cover plate 14 for covering the base frame 13 and the substrate 20; and a pressing means 15' a pressing force of the bottom plate 131 of the base frame 13 and the cover plate 14 abutting each other; (b) the first pressure of the first sealing frame strip 12 The segment 120 is attached to the periphery of the surface 21 to be processed of the substrate 20; (c) the first sealing frame strip 12 is placed in the cavity 132 of the base frame 13 along with the periphery of the substrate 2; (d) The cover plate 14 is engaged with the base frame 13 such that the periphery of the cover plate 14 is pressed against the top of the first sealing frame strip 12, and the cover plate 14, the substrate 2 and the first sealing frame strip are attached. 12 enclosing a receiving space 11; (e) pressing the cover plate 14 against the bottom plate 131 of the base frame 13 by the pressing means 15 and tightening and fixing the first sealing frame 12 The pressing portion 12 〇 is pressed to the periphery of the top surface 21 of the substrate 20 to press the first sealing frame 12 between the substrate 2 and the slab 14 to further effectively seal the accommodating space 11; (f) depositing a required amount of the precursor solution 16 in the accommodating space 11 for depositing a compound film on the surface 21 to be processed of the substrate 2; (g) The base frame 13 and the substrate 2 are placed in a hot water tank 31 of the hot water tank 3 to perform a chemical water bath deposition process, and the precursor solution 17 is caused by the temperature of the hot water 31. The upper plate 20 is deposited a compound film. 2. The first preferred embodiment of the present invention is shown in FIGS. 3 and 4. Based on the foregoing basic embodiment, in order to support the periphery of the bottom surface 22 of the glass substrate 20 by elastic cushioning, the first aspect of the present invention In a preferred embodiment, a resilient second sealing frame strip 121 is provided. The top of the second sealing frame strip 121 forms a second pressing section 122 along the inner ring wall adjacent to the inner ring wall. In the operation of the foregoing step (b), the first pressing section 120 of the first sealing frame strip 12 is attached to the periphery of the top surface 21 of the substrate 20 (ie, the surface 21 to be processed), and the second sealing. The second pressing section 122 of the frame strip 121 is attached to the periphery of the bottom surface 22 of the substrate 2 . In the operation of the foregoing step (c), the second sealing frame strip 121 is placed in the cavity 132 of the base frame 13 along with the circumference of the first sealing 201128791 frame 12 wire; and in the foregoing step (e) In operation, the first pressing section 12 of the first sealing frame strip 12 and the second pressing section 122 of the second sealing strip 121 are respectively pressed against the top surface of the substrate 2〇. The circumference of the 21 and the circumference and edge of the bottom surface 22. Therefore, by the arrangement of the second sealing frame strip 121, the substrate 20 can be prevented from directly contacting the base frame 13, and buffer support can be obtained to prevent the substrate 2 from being damaged. 2.3. A second preferred embodiment of the present invention, as shown in FIGS. 5 to 7, is based on the foregoing basic embodiment, in order to allow the outer periphery of the bottom surface 22 of the glass φ substrate 20 to be elastically cushioned, and to save assembly time and effort. The second preferred embodiment of the present invention is provided with a second sealing frame strip 121 having elasticity. The top of the second sealing frame strip 121 is formed adjacent to the inner ring wall thereof along the second sealing frame 121. a second pressing section 22 surrounded by the inner ring wall, and the first sealing frame strip 12 and the second sealing frame strip 121 are integrally formed of rubber, leaving only the first pressing section 120 and the second pressing section 122 A groove is formed to form a groove, and the groove 123 is provided for the periphery of the substrate 20. In the operation of the foregoing step (b), the first pressing section 120 of the first sealing frame strip 12 is attached to the periphery of the top surface 21 of the substrate 20 (ie, the surface to be processed 210) and the second sealing. The second pressing portion 22 of the frame 1212 is attached to the periphery of the bottom surface 22 of the substrate 20, so that the substrate 2 is embedded in the recess 123. In the operation of the foregoing step (c), the second sealing frame strip 121 is placed in the cavity 132 of the base frame 13 together with the first sealing frame strip 12 and the periphery of the substrate 2; and in the foregoing step (e) In operation, the first pressing section 120 of the first sealing frame strip 12 and the second pressing section 122 of the second sealing frame strip 121 can respectively press the periphery and the bottom surface of the top surface 21 of the substrate 20 respectively. The circumference of 22. Therefore, by forming the first sealing frame strip 12 and the second sealing frame strip 121 integrally, the 201128791 can not only avoid the substrate 20 directly contacting the base frame 13, obtaining buffer support, and avoiding damage to the substrate 20, and only the substrate 2 is 〇 The peripheral edge is embedded in the groove 23, which can be combined with the first sealing frame strip 12 and the first sealing frame strip 121, thereby saving assembly time, and improving the airtightness of the receiving space 11 to effectively avoid the leakage of the precursor solution 16 Out. 2.4 A third preferred embodiment of the present invention, as shown in Figures 1, 3 and 5, is based on the foregoing basic embodiment, in order to allow the user to pour the enthalpy solution 16 into the accommodating space η to effectively avoid the precursor solution • overflowing, and contaminated by the surrounding environment, a preferred embodiment of the present invention is provided with a perforation 14〇 on the cover plate 14 through which the precursor solution 16 can be filled into the receiving space 11, the perforation 140 It can be closed by a plug body 141. 2.5 Specific Embodiment of the Tightening Means of the Present Invention As shown in FIGS. 1, 3 and 5, based on the foregoing basic embodiments, a specific embodiment of the pressing means 15 of the present invention includes a plurality of jigs 15〇, each The clamp 150 includes an upper buckle portion 151, a lower buckle portion 152 and a locking means. When the clamp 15 is attached to the base frame 13, the upper buckle portion 151 is located on the top surface of the cover plate 14, and the lower buckle portion 152 is located at the top surface. The bottom surface of the bottom plate 131 of the base frame 13 is integrally formed and formed by the upper buckle portion 151 and the lower buckle portion 152, and the locking means is provided with a threaded hole 153 extending through the upper buckle portion 151, and a bolt 154 'bolt is provided. 154 is screwed to the screw hole 153, the bottom end of the bolt 154 pushes the cover plate 14 to make the cover plate 14 abut against the bottom plate 131 of the base frame 13, and then the fixed base frame 13 and the cover plate 14 are clamped together. 8 shows a specific embodiment of the pressing means 15 of the present invention, comprising a plurality of clamps 150' each of the clamps 15 includes an upper buckle portion, a 201128791 lower buckle portion 152 and a locking means, and the clamp 150 is attached. When the base frame 13 is on, the upper buckle portion 151 is located on the top surface of the cover plate 14, and the lower buckle portion 152 is located on the base frame 13. The bottom surface of the plate 131, the upper fastening portion 151 and the lower fastening portion 152 are separated, and the two can be sleeved to each other to be relatively movable. The upper fastening portion 151 and the lower fastening portion 152 are respectively provided with a quick release structure, and the quick release structure is utilized. It can be controlled that the upper buckle portion 151 and the lower buckle portion 152 are opposed to each other to respectively push the cover plate μ and the base frame 13 to fix the cover plate 14 and the base frame 13. The quick release structure is mainly configured such that the upper buckle portion 151 and the lower buckle portion 152 are disposed with a shaft 155 'shaft 155-end sleeve nut 156, and the other end of the φ is pivotally connected to a trigger 158 by a shaft 157. The pivoting portion 159, the circumferential surface of the pivoting portion 159 is non-circular with respect to the axis of the rotating shaft 157 and gradually deviates from the curved surface mo of the axial center. When the trigger 158 is rotated to an angle with respect to the shaft 155, the pivoting portion 159 is The portion of the curved surface 160 that is closer to the axial center of the yaw axis 157 contacts the upper fastening portion 151, so that the upper fastening portion 151 is pressed against the downward fastening portion 152, and the cover plate 14 and the base frame 13 are sandwiched and fixed. Referring to Figures 9 to 11, the operation of the present invention, the substrate 2 can be glass, or the top surface 21 of the substrate (i.e., the surface 210 to be processed) is plated with a layer. In the solar photovoltaic semiconductor film 22, if a solar photovoltaic film 22 (for example, a CIGS film or a CIS thin film) is plated on the substrate 20, a compound film 23 can be deposited on the solar photovoltaic film 22 by the present invention. The compound film 23 is a cadmium sulfide CdS film 'as a buffer layer of the solar semiconductor film 22. The operation steps are as follows: First, the integrated first sealing frame strip 12 and the second sealing frame strip 121 are sleeved on the periphery of the substrate, so that the periphery of the substrate 20 is embedded in the recessed groove 123, and the first pressure of the first sealing frame strip 12 is [s 12 201128791 The junction 120 is attached to the periphery of the top surface 21 of the substrate 20, and the second pressing section 122 of the second sealing frame 121 is attached to the periphery of the bottom surface 22 of the substrate 20; the first sealing frame 12 and the first sealing frame 12 The second sealing frame strip 121 is placed in the cavity 132 along with the periphery of the substrate 2; the cover plate 14 is engaged with the base frame 13 such that the periphery of the cover plate 14 is pressed against the top of the first sealing frame strip 12, and the cover is closed. The plate 14, the substrate 2 and the first sealing frame 12 enclose a receiving space 11; φ is attached to the base frame by the clamp 150, and the lower buckle is attached to the bottom surface of the bottom plate of the base frame; and the upper fastening portion 151 is located at the cover Above the board 14, the bolt 154 is locked, and the bottom plate 131 of the base frame 13 is pushed up by the bolt 154, and the cover 14 and the base frame 13 are fixed together with the base plate 2, and the first seal is fixed. The frame strip 12 is pressed between the substrate 2 and the cover plate 14 to effectively seal the receiving space 11 and press the second sealing frame strip 121 against the substrate 2〇. Between the bottom plate 131 of the base frame 13 and the plenum solution 17 for depositing the compound film 23 (ie, the sulfide ore (10) film) from the perforation 140, into the receiving space, and then the plug body 141 is closed by the perforation 140. Because of the operation example, the cadmium sulfide C (jS film is deposited, the precursor solution 17 includes a cadmium ion solution, a sulfur ion solution, a complex solution and a buffer solution, wherein the mineral ion solution system It is selected from the group consisting of chloride, cadmium sulfate, cadmium acetate and cadmium sulfide. One of the 'sulfur ion solutions is selected from one of thiourea, thioacetamide and sulfuric acid. The complex solution is selected from the group consisting of ammonia, NTA, EDTA & Ethylenediamine. One of them, and the buffer solution is selected from one of ammonium chloride, ammonium acetate and ammonium sulfate. In this operation example, the precursor solution 17 is formed by mixing cadmium sulfate, thiourea, ammonium sulfate and ammonia; 201128791 and The base frame 13 together with the substrate 20 is placed in the hot water tank 31 of the hot water tank 3 for chemical water bathing, and the lying material is allowed to be brittle on the substrate solar photovoltaic semiconductor film 22 to deposit a thickness of about 30~50_ compound. Film 23 (ie sulfur Mineral (10) film) 肆• Conclusions From the above detailed description, it can be concluded that the invention has the following main advantages: 1. Single-sided mineral film: the substrate only faces the surface to be processed and the precursor solution, so it can be reached The effect of single-sided coating 2. Reduce the use of the precursor solution and the wave f, and ensure that the composition of the precursor solution is -, improve the deposition material f: the storage space of the substrate to be added I, the hair capacity as long as It is sufficient to have a precursor solution of the Wei-layer compound _, the amount of the precursor solution is extremely small, no waste is generated, and the composition of the precursor solution poured into the accommodating space can ensure uniformity. 3 The substrate can be placed in a flat chemical bath to ensure the thickness of the deposited compound film on the entire processing surface of the substrate to improve the deposition processing quality. 4 · The substrate to be processed on the surface of the coffee to accommodate the empty (four) people need the amount of the precursor solution 'can be placed in the hot water needle to carry out the autumn product, the amount of water can be accelerated, can speed up the ___ rate, scientific time The focus is on reducing costs. The above description is only for the present invention "όΓ At P1 仃>, the embodiment, is not intended to limit the invention _, where the stipulations of the stipulations of the stipulations, the riding of the levy and the secret of its (four) ridge Wei Caicai, t-view New Zealand invention i 201128791 patent scope. The invention of the frequency-matching material of the invention is not seen in the same technology and has a new touch, and is more advanced than the conventional technology, and can be fully utilized by the industry, and has met the requirements of the invention patent, For the sake of the request, I would like to ask the Department of Patent to 'maintain the legitimate rights and interests of this applicant. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an exploded perspective view of a first embodiment of the present invention; FIG. 2 is a schematic cross-sectional view showing a first embodiment of the present invention; Figure 4 is a schematic cross-sectional view showing a second embodiment of the present invention; Figure 5 is a schematic cross-sectional view showing a third embodiment of the present invention; 7 is an enlarged schematic view of the 撷 self-circle a in FIG. 6; FIG. 8 is a schematic view showing another embodiment of the pressing means of the present invention; Lu® 9 is a schematic diagram of the operation flow of the present invention; FIG. 11 is an enlarged schematic view of the self-circle B of FIG. 1 according to the present invention; FIG. 1 is a schematic diagram of a conventional CIGS thin film solar cell. [Main component symbol description] Fixing assembly 10 First pressing section 120 Receiving space 11 First sealing hinge u First sealing frame strip 121 First pressing section [s] 15 201128791 Inserting groove 123 Base frame 13 Side plate 130 Base plate 131 Cassette 132 Cover plate 14 Perforation 140 Plug body 141 Tightening means 15 Clamp 150 Upper buckle 151 Lower buckle 152 Screw hole 153 Bolt 154 Shaft 155 Nut 156 & Rotary shaft 157 Trigger 158 Pivot 159 Curved surface 160 Precursor solution 17 Substrate 20 Top surface 21 Surface to be processed 210 Bottom surface 22 Hot water tank 30 Hot water 31