201127554 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種化學機械研磨或平坦化（Chemical Mechanical Polishing or Planarization，CMP)裝置，特別是有 關於一種研磨塾調節器（pad conditioner)及其製造方法。 【先前技術】 為了解決晶片製造時光微影（photolithography)製程中光 學對焦的問題，通常會在每次金屬化和介電質沉積的製程 步驟間加入化學機械研磨或平坦化製程，以消彌晶圓表面 上的高低起伏輪廓，達到晶圓表面的高度平坦化。隨著技 術節點繼續地往32nm以下推進，半導體製程對於平坦化技 術的要求也日益嚴峻，但目前CMP仍是晶圓製造業唯一大 量採用以達到全面性平坦化的技術。 若從微觀角度來觀察晶圓研磨面，顯示在CMP製程中 材料的移除來自於研磨液（slurry)的化學成分與晶圓表面材 料的化學作用，加上研磨液中的研磨粒子（slurry particles) 不停地磨粒磨損（abrasive wear)經化學反應後的晶圓表面。 一般認為只有部分研磨液中的研磨粒子真正參與晶圓表面 的材料移除，通常這些研磨粒子被稱為活性磨粒（active abrasives)。由於研磨墊的表面粗链度，使得只有研磨墊表 面的凸點（asperities)與晶圓直接接觸，而活性磨粒就是那些 陷在研磨墊凸點與晶圓接觸面間的研磨粒子，在研磨墊凸 點的施力作用下會壓入並塑性移除晶圓表面的鈍化層 (passivation layer)。因此，在CMP製程當中，研磨塾表面 201127554 凸點有二項重要功此.（l)當做傳遞晶圓承載頭下壓力於晶 圓表面的傳力機構；（2)參與分送研磨液至晶圓表面的工作 ;(3)作為清除研磨副產物的媒介。 但是，隨著CMP研磨過程進行，研磨墊表面凸點會逐 漸被磨平成為平滑平台（mesa)結構，而晶圓磨屬、研磨塾殘 渣和凝聚（agglomeration)的研磨粒子等研磨副產物，也會逐 漸沉積在研磨塾的表面和孔洞（p〇res)中，使其表面進一步變 的又硬又滑，形成所謂的鏡面化（glazing)現象，同時也喪失 掉研磨液的承載能力。因此，晶圓移除率（wafer removal rate)也會隨CMP研磨過程進行而逐漸減小。通常CMp機台 會以研磨墊調節器來進行調節（c〇nditi〇ning)或修整 (dressing)研磨墊表面的動作，以維持長時間晶圓移除率的 穩定性和均勻性。所以研磨墊調節器具有下列三項重要任 務：（1)維持均勻的研磨墊表面凸點結構；（2)保持研磨墊表 面於穩定分配研磨液狀態；（3)參與排除研磨墊表面的晶圓 研磨副產物。 現有研磨墊調節器主要利用鑽石磨粒在研磨墊表面犁 溝以維持凸點結構。若是鑽石磨粒彼此間的凸出高度差異 大，會造成鑽石磨粒在研磨墊表面犁溝的微溝槽深淺不一 ，而使凸點大小不均，導致研磨均勻性不佳。而且，研磨 墊也會被太凸出的鑽石磨粒過度磨除，造成研磨墊使用壽 命縮短，不僅增加耗材成本，也目更換研磨塾再調整至可 工作狀態所耗費的時間，而降低CMp機台的可利用率。 然而，若是研磨墊調節器的所有鑽石磨粒凸出高度差 201127554 ' j越小，例如中華民國專利第Ϊ315691號所揭露者，則有越 高比例的鑽石接觸到研磨墊，其結果將導致在研磨墊調節 =程t ’ CMP機台施加在調節器的下壓力（d〇wnf〇r⑷被非 常多的接觸鑽石平均分擔，因而單顆接觸鑽石的荷重將變 ^非常小以致於無法在研磨墊表面犁溝形成適當深度的 微溝槽和適當大小的凸點，不能有效調節研磨墊表面，更 這論維持CMP製程長時間晶圓移除率穩定性和均勾性。 【發明内容】 • ®此’本發明之-目的’即在提供-種具有表面凹陷 圖案的樹脂黏結研磨墊調節器，藉由平均分佈於工作表面 的凹陷區來減少接觸研磨墊的鑽石磨粒數量，以增加每一 顆鑽石磨粒的荷重，而能在研磨塾表面產生適當深度的微 溝槽與適當大小的凸點，且藉由凹陷區能增加容屑空間， 並能由凹陷區的鑽石磨粒梳理凸點，以及分散研磨液和掃 除磨屑，而能降低晶圓的表面缺陷，提高CMp製程良率。 本發月之另目的，在於提供一種具有表面凹陷圖案 修的樹脂黏結研磨墊調節器的製造方法。 —於是，本發明具有纟面凹陷圖案的樹脂黏結研磨塾調 節器’係由一樹脂層和多數個部分包覆在該樹脂層内之鑽 石磨粒所構成，該樹脂層具有一分佈有該等鑽石磨粒之工 作表面’且該工作表面具有多數個平均分佈於該工作表面 的凹陷區，而該工作表面中未凹陷的部分為未凹陷區該 等凹陷區的總面積佔該工作表面之面積的2〇%至8〇%。 另-方面’纟發明具有表面凹陷圖案的樹脂黏結研磨 201127554 塾調節器的製造方法，包括下列步驟： '具有模型表面的基板’該模型表面上形成有 多數個平均分佈於該模型表面的凸起圖案，該等凸起圖案 的總面積佔该模型表面之面積的20%至80% ; 於具有$等凸#圖案的該模型表面塗佈預定厚度且可 去除的膠黏劑層； 將多數個鑽石磨粒依預定間距規則地排列於該膠黏劑 層上，並施壓於該等鑽石磨粒，藉以使該等鑽石磨粒的— 部份進入該膠黏劑層接近該模型表面； 將該結合有鑽石磨粒之基板置於一模具内，並注入樹 脂使之形成一包覆該等鑽石磨粒的樹脂層； 脫模並分離該樹脂層與該基板；及 /月除1»亥荨鑽石磨粒與該樹脂層上之膠黏劑，即可獲得 具有表面凹陷圖案的樹脂黏結研磨墊調節器。 本發明之功效，本發明具有表面凹陷圖案的樹脂黏結 研磨墊調即器，能夠藉由工作表面的凹陷區來降低接觸研 磨墊的鑽石磨粒數量，以增加位於未凹陷區的接觸鑽石磨 粒的平均荷重，而使接觸鑽石磨粒（用以犁溝的鑽石磨粒 )有足夠大的荷重，能在研磨墊表面製造大量適當大小的 凸點，有利於黏附更多的研磨粒子，和傳遞適當的研磨壓 力，可以有效降低晶圓表面的微到傷數，並進一步提昇晶 圓移除率和降低晶圓内不均勻性（within_wafer nonuniformity，WIWNU)。 再者，因為接觸鑽石磨粒有足夠大的荷重，能夠在研 201127554 磨塾表片犁出適當深度的微溝槽，讓研磨塾表面的孔洞互 相連通，有利於研磨液的輸送與涵養，提高研磨液的利用 率〇 而且，本發明可具有較高的鑽石磨粒排列密度，且各 鑽石磨粒之頂點尚度大致相同，而具有較佳的接觸鑽石磨 粒數量，能使研磨墊調節器的切削率不易鈍化，可維持較 長時間的晶圓移除率穩定性，並能降低晶圓間的不均勻性 (wafer-to-wafer nommiformity，WTWNU )，而且不會過度 磨除研磨墊，故可延長研磨墊的使用壽命，減少CMp機台 的非製程時間。 此外，凹陷區可以暫時儲存磨屑和研磨液，加大容屑 間，而不妨礙未凹陷區的鑽石磨粒的犁溝作業，同時凹陷 區的鑽石磨粒可以梳理凸點，分散研磨液以及掃除磨屑， 因此能降低晶圓的表面缺陷。 【實施方式】 <發明詳細說明> 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一個較佳實施例及三個具體例的詳細 說明中，將可清楚的呈現。 本發明具有表面凹陷圖案的樹脂黏結研磨墊調節器及 製造方法之一較佳實施例說明如下： 製乍X、有表面凹Pp圖案的樹脂黏結研磨墊調節器的實 施步驟包含： 提供一具有一模型表面的基板，該模型表面上形成有 201127554 多數個平均分佈於該模型表面的凸起圖案，該等凸起圖案 的總面積佔該模型表面之面積的2〇%至8〇% ; 於具有該等凸起圖案的該模型表面塗佈預定厚度且可 去除的膠黏劑層； 將多數個鐵石磨粒依預定間距規則地排列於該膠黏劑 層上，並施壓於該等鑽石磨粒，藉以使該等鑽石磨粒的— 部份進入該膠黏劑層接近該模型表面； 將該結合有鑽石磨粒之基板置於一模具内，並注入樹 脂使之形成一包覆該等鑽石磨粒的樹脂層； 脫模並分離該樹脂層與該基板；及 清除該等鐵石磨粒與該樹脂層上之膠黏劑，即可獲得 具有表面凹陷圖案的樹脂黏結研磨墊調節器。 較佳地-亥等凸起圖案的總面積佔該模型表面之面積 的5〇%至8〇%;凸起圖案可為圓頂形（dome)、圓㈣、直 立角柱形（例如三角柱、四角柱、六角柱等）或直立錐台 形（例如圓錐台、三角錐台、四角錐台、六角錐台等），將 多數個凸起圖案規則排列平均分佈於模型表面；或者，該 等凸起圖案亦可以是其中之一為圓頂形或圓柱形，其他為 長條形（可為直線長條或曲線長條），將多數個長條形的凸 起圖案以圓頂形或圓柱形的凸起圖案為中心呈賴射狀間隔 排列’平均分佈於該模型表面。 本發明所使用的鑽石磨粒為高溫高壓合成之工業用鑽 石’該等鑽石磨粒之粒徑以介於美國筛網14〇目至3〇目較 佳’且排列該等鑽石磨粒的間距以介於粒徑的丨.5至4.5倍 201127554 較佳。 /該等凸起圖案的凸出高度以介於該等鑽石磨粒之平均 粒徑的0.1至2倍較為合適，且以介於該等鑽石磨粒之平均 粒徑的0.2至1倍較佳。 基板的製作可利用射出成形或熱壓成形⑽咖―㈣ 方式製成塑膠材質的基板，亦可利用電鑄或壓鑄方式製成 金屬材質的基板，或者，可利用放電加工、超音波加工、 微銑削、微研磨加工、雷射加工、電子束加工或離子束加 工等方式，使基板表面形成凸起圖案。 該膠黏劑層的厚度以該等鑽石磨粒之粒徑的〇2至 倍較佳，其塗佈方式並無特殊限制，適用者可舉例如滾筒 上膠、塗刷、喷塗、網印等。所使用的膠黏劑以壓敏膠黏 劑較佳，例如氣丁橡膠壓敏膠、丁苯橡膠壓敏膠、有機矽 壓敏膠、聚乙烯基驗壓敏膠、聚氨酯壓敏膠等。 由前述步驟製得的研磨墊調節器，由一樹脂層和多數 個部分包覆在該樹脂層内之鑽石磨粒所構成，該樹脂層具 有一分佈有該等鑽石磨粒之工作表面。該工作表面具有由 該模型表面轉寫的圖形，亦即，於該模型表面的該等凸起 圖案轉寫於該工作表面形成凹陷圖案，使該工作表面具有 多數個平均分佈於該工作表面的凹陷區，而該工作表面中 未凹陷的部分為未凹陷區’該等凹陷區的總面積佔該工作 表面之面積的20%至80%。 較佳地’該等凹陷區的總面積佔該工作表面之面積的 50%至80%。凹陷區的總面積所佔工作表面之面積的比例， 201127554 可依據接觸研磨墊的鑽石數目、荷重和形成溝槽深度來決 定。 而該等凹陷區與該未凹陷區的高度差即等於該等凸起 圖案的凸出尚度，同樣地，該等凹陷區與該未凹陷區的高 度差以介於鑽石磨粒之平均粒徑的0.1至2倍較為合適，且 以介於鑽石磨粒之平均粒徑的0.2至丨倍較佳。凹陷區與未 凹陷區的高度差可依據鑽石犁溝可能形成的凸點大小高度 調整。例如，若用於欲使鑽石犁溝的深度較深之研磨墊調 整器，其犁溝所產生的凸點較大，則凹陷區與未凹陷區的 高度差可較大。 此外’該等鑽石磨粒凸出該樹脂層的部分，即為進入 黏膠劑層的部分，由於該等鑽石磨粒排列於黏膠劑層時， 其頂點接近該模型表面，而使位於該等凹陷區的鑽石磨粒 之頂點高度大致相同，且位於該非凹陷區的鑽石磨粒之頂 點尚度大致相同，並使位於該等凹陷區的鑽石磨粒之頂點 ，與位於該非凹陷區的鑽石磨粒之頂點，具有相同於凸起 圖案的凸出高度之高度差。本發明所述鑽石磨粒之頂點係 指各鑽石磨粒在黏結劑層中最接近模型表面的端點，或為 與樹脂層結合時凸出樹脂層的最高點。 <具體例1> 製備基板 參閱圖1與圖2,以射出成形方式製成一聚丙烯材質的 塑膠基板1。基板1外徑為110mm，厚度為〗5mm，並具有 直徑100mm的圓形模型表面n，模型表面u上形成有多 10 201127554 數個平均分佈於模型表面11的凸起圖案⑴。本具體例的 凸起圖案111為圓柱形，圓柱直徑為2mm，凸出高度⑻ 為50微米，兩兩凸起圖案⑴㈣心間距1〇2為3 6麵。 本具體例凸起圖案lu的總面積約佔鄕模型表面Η的面 積。 形成膠黏劑層 參閱圖3,以橡膠滾筒在基板】的模型表面u塗佈一 層膠黏劑層2，並將塗佈有膠黏劑層2的基板i置入無塵熱 風循％烤|目中’以25 C烘乾3G分鐘，供乾後膠黏劑層2的 厚度約為50微米。本具體例所用的膠黏劑為3m公司生產 的水性氣丁橡膠接觸型接著劑，商品型號TW 3〇〇。 排列鑽石磨粒 參閱圖4’藉由一厚度為〇 lmm的不錄鋼片作為模板3 模板3上以雷射鑽孔加工形成多數個直徑為〇 的圓 形穿孔3卜兩兩穿孔31的中心間距為〇 4咖，穿孔μ呈 陣列排列並佈滿直徑為1〇〇mm的圓形區域（圖未示），將模 板3置於膠黏劑層2上方’並使模板3的圓形區域對齊基 板1的模型表面U，再將多數個鐵石磨粒4散佈於模板3 上，並以壓克力毛刷輕輕來回掃動散佈在模板3上的鑽石 磨粒4’使鑽石磨粒4落人穿孔31内，並被膠黏劑層2黏 住形成暫時性結合。待模板3上每個穿孔31都大致容納一 個鑽石磨粒4之後，再以壓克力毛刷將未落入穿孔31中的 多餘鑽石磨粒4騎，然後上升模板3’留下暫時結合於膠 黏劑層2並以陣列排列的鑽石磨粒4。本具體例所使用的鑽 201127554 磨粒4之粒徑範圍介於美國筛網7〇目至⑽目之間，平 均粒控約200微米，為Ε[ΕΜΕΝ·公司所生產，型號 SDB1125。 參閱圖5，透過一厚度約為6mm的矽膠片$對排列於 黏膠劑層2的鑽石磨粒4施加約5kg/em2的均勻壓力，將錯 石磨粒4更進一步地壓入膠黏劑層2，使鑽石磨粒4的一部 伤進入膠黏劑層2接近模型表面丨丨。除了矽膠片5之外， 也可以採用其他軟質材料來使施壓均勻，例如天然橡膠或 腈橡膠（NBR)等。所施加的壓力也可選用在1至2〇kg/cm2範 圍内的壓力。 形成樹脂層 參閱圖6,在一模具6之上模61内置入鑽石磨粒4已 深抵並結合在黏膠劑層2之基板1，並與一下模6 2合模。 模具6設有0型密封圈63、排氣口 64及樹脂注入口 65。 利用模具6之排氣口 64抽真空，使模腔66内壓力低於 lmbar，再由樹脂注入口 65注入熱固性樹脂。本具體例所 使用的熱固性樹脂是以STRUERS A/S公司所製的環氧樹脂 (EPOFIX RESIN)及硬化劑（EPOFIX HARDENER)以重 量比25 : 3的比例混合而成。 藉由真空注入（vacuum impregnation)，有刺於排除模腔 66内之空氣，以及吸附在鑽石磨粒4表面的氣體，如此將 使得樹脂的浸潤更為充分，並可降低樹脂與鑽石磨粒4間 形成微觀孔隙的可能性。 參閱圖7,待熱固性樹脂在常溫下硬化12小時後進行 12 201127554 脫模程序，使硬化的樹脂層7連同與樹脂層7形成永久性 結合之鑽石磨粒4從模具6和基板】表面脫開。接著將樹 脂層7具有錯石磨粒4和膠黏劑層2之一側浸泡於甲乙嗣 (methyl ethyl ketone)溶劑中並施以超音波震盪約2〇分鐘， 再以不織布擦拭清除沾黏在鑽石磨粒4露出樹脂層7的部 分及樹脂層7表面的膠黏劑層2，使鐵石磨粒4原來被膠黏 劑層2覆蓋的部分露出樹脂層7’接著以超音波震盈清洗後 ，以壓縮空氣吹乾’即可獲得一由樹脂層7與鑽石磨粒4 參201127554 VI. Description of the Invention: [Technical Field] The present invention relates to a chemical mechanical polishing or planarization (CMP) device, and more particularly to a polishing pad conditioner and Its manufacturing method. [Prior Art] In order to solve the problem of optical focusing in the photolithography process during wafer fabrication, a chemical mechanical polishing or planarization process is usually added between each metallization and dielectric deposition process step to eliminate the crystal The high and low undulations on the circular surface achieve a high degree of planarization of the wafer surface. As technology nodes continue to move below 32nm, the semiconductor process is becoming more and more demanding for flattening technology, but CMP is still the only technology in the wafer manufacturing industry to achieve comprehensive flattening. If the wafer grinding surface is observed from a microscopic point of view, it is shown that the material removal in the CMP process comes from the chemical action of the slurry chemical composition and the wafer surface material, plus the abrasive particles in the slurry (slurry particles) ) Abrasive wear of chemically reacted wafer surfaces. It is generally believed that only a portion of the abrasive particles in the slurry actually participate in material removal from the wafer surface, which is commonly referred to as active abrasives. Due to the thick chain surface of the polishing pad, only the asperities of the surface of the polishing pad are in direct contact with the wafer, and the active abrasive particles are the abrasive particles trapped between the bumps of the polishing pad and the contact surface of the wafer. The passivation layer of the wafer surface is pressed and plastically removed by the application of the pad bumps. Therefore, in the CMP process, the bump surface 201127554 bump has two important functions. (1) as the transfer force of the transfer wafer carrier under the surface of the wafer; (2) participate in the distribution of the slurry to the crystal Work on a round surface; (3) as a medium to remove grinding by-products. However, as the CMP polishing process proceeds, the bumps on the surface of the polishing pad are gradually smoothed into a smooth mesa structure, and grinding by-products such as wafer grinding, grinding residue, and agglomerating abrasive particles are also It will gradually deposit on the surface and pores of the grinding crucible, making its surface further hard and slippery, forming a so-called glazing phenomenon, and also losing the carrying capacity of the slurry. Therefore, the wafer removal rate also gradually decreases as the CMP grinding process proceeds. Usually, the CMp machine uses a pad conditioner to adjust or dress the surface of the pad to maintain stability and uniformity of wafer removal for long periods of time. Therefore, the polishing pad adjuster has the following three important tasks: (1) maintaining a uniform polishing pad surface bump structure; (2) maintaining the surface of the polishing pad to stably distribute the slurry; and (3) participating in the wafer to remove the surface of the polishing pad. Grinding by-products. Existing polishing pad conditioners primarily utilize diamond abrasive grains to furrow the surface of the polishing pad to maintain the bump structure. If the difference in the height of the diamond abrasive grains between the two is large, the micro-grooves of the diamond abrasive grains on the surface of the polishing pad may be different in depth, and the bump size may be uneven, resulting in poor grinding uniformity. Moreover, the polishing pad is also excessively removed by the excessively protruding diamond abrasive grains, resulting in a shortened service life of the polishing pad, which not only increases the cost of consumables, but also reduces the time taken for the grinding crucible to be adjusted to the operable state, and reduces the CMp machine. The availability of the station. However, if all the diamond abrasive grain protrusion height difference of the polishing pad adjuster is smaller, such as disclosed in the Republic of China Patent No. 315691, a higher proportion of diamonds are in contact with the polishing pad, and the result will result in Grinding pad adjustment = path t 'The pressure applied by the CMP machine to the regulator (d〇wnf〇r(4) is evenly shared by a large number of contact diamonds, so the load of a single contact diamond will become so small that it cannot be used in the polishing pad The surface furrows form micro-trenches of appropriate depth and appropriately sized bumps, which cannot effectively adjust the surface of the polishing pad, and further maintain the stability and uniformity of the wafer removal rate for a long time in the CMP process. [Invention] • The 'invention of the present invention' is to provide a resin bonded abrasive pad conditioner having a surface recess pattern, which reduces the number of diamond abrasive grains contacting the polishing pad by averaging the concave regions distributed on the working surface to increase each The weight of the diamond abrasive particles, which can produce appropriate depth of micro-grooves and appropriate size bumps on the surface of the abrasive crucible, and can increase the chip space by the recessed area, and can be The diamond abrasive grains in the trap area comb the bumps, and disperse the grinding liquid and sweep the grinding debris, which can reduce the surface defects of the wafer and improve the yield of the CMp process. Another purpose of this month is to provide a surface concave pattern repair. A method of manufacturing a resin bonded abrasive pad conditioner. - Thus, the resin bonded abrasive 塾 adjuster of the present invention has a resin layer and a plurality of diamond abrasive grains partially covered in the resin layer The resin layer has a working surface on which the diamond abrasive grains are distributed and the working surface has a plurality of recessed regions evenly distributed on the working surface, and the unembossed portion of the working surface is an unrecessed region. The total area of the area accounts for 2% to 8% of the area of the working surface. Another aspect of the invention is the invention of a method for manufacturing a resin bonded abrasive having a surface depression pattern 201127554 , adjuster, comprising the following steps: 'having a model surface a plurality of convex patterns uniformly distributed on the surface of the model are formed on the surface of the substrate, and the total area of the convex patterns occupies the surface of the model 20% to 80% of the area; coating the surface of the model having a convex pattern of $; a predetermined thickness and a removable adhesive layer; and regularly arranging a plurality of diamond abrasive grains at a predetermined interval on the adhesive a layer of pressure on the diamond abrasive particles, such that a portion of the diamond abrasive particles enters the adhesive layer adjacent to the surface of the mold; the substrate incorporating the diamond abrasive particles is placed in a mold, And injecting a resin to form a resin layer covering the diamond abrasive grains; demolding and separating the resin layer and the substrate; and removing the adhesive on the resin layer from the 1荨A resin bonded polishing pad conditioner having a surface concave pattern can be obtained. The effect of the present invention is that the resin bonded polishing pad adjusting device having a surface concave pattern can reduce the diamond contacting the polishing pad by the concave portion of the working surface. The amount of abrasive particles to increase the average load of the contact diamond abrasive particles in the unconcave area, so that the diamond abrasive particles (the diamond abrasive grains used to furrow) have a sufficient load to make a large number of appropriate sizes on the surface of the polishing pad. Bump Conducive to adhering more abrasive particles, and delivering appropriate grinding pressure, can effectively reduce the micro-to-injury of the wafer surface, and further improve the wafer removal rate and reduce wafer inhomogeneity (within_wafer nonuniformity, WIWNU ). Furthermore, because of the large enough load contact with the diamond abrasive particles, the micro-grooves of appropriate depth can be plowed in the grinding of the 201127554 grinding table, so that the pores on the surface of the grinding crucible are connected to each other, which is beneficial to the transportation and cultivation of the polishing liquid, and improves The utilization rate of the slurry 〇 Moreover, the present invention can have a higher diamond abrasive grain arrangement density, and the apex of each diamond abrasive grain is about the same, and the number of contact diamond abrasive particles is better, and the polishing pad adjuster can be used. The cutting rate is not easy to passivate, can maintain the wafer removal rate stability for a long time, and can reduce the wafer-to-wafer nommiformity (WTWNU) without excessively grinding the polishing pad. Therefore, the service life of the polishing pad can be prolonged, and the non-process time of the CMp machine can be reduced. In addition, the recessed area can temporarily store the grinding debris and the grinding liquid, increase the gap between the chips, without hindering the furrow operation of the diamond abrasive grains in the unconcave area, and the diamond abrasive grains in the recessed area can comb the bumps, disperse the slurry and The wear debris is removed, thus reducing the surface defects of the wafer. [Embodiment] The foregoing and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments Presentation. A preferred embodiment of the resin bonded polishing pad adjuster and method for manufacturing the surface recessed pattern of the present invention is as follows: The step of implementing the resin bonded polishing pad adjuster having the surface concave Pp pattern comprises: providing one with one a substrate on the surface of the model having a plurality of projection patterns 201127554 uniformly distributed on the surface of the model, the total area of the convex patterns occupies 2% to 8% of the area of the surface of the model; The model surface of the convex pattern is coated with a predetermined thickness and a removable adhesive layer; a plurality of iron abrasive grains are regularly arranged on the adhesive layer at a predetermined interval, and pressure is applied to the diamond grinding Granules, whereby a portion of the diamond abrasive particles enters the adhesive layer adjacent to the surface of the mold; the substrate in which the diamond abrasive particles are bonded is placed in a mold, and the resin is injected to form a coating a resin layer of diamond abrasive particles; demolding and separating the resin layer and the substrate; and removing the iron abrasive grains and the adhesive on the resin layer to obtain a resin bond having a surface concave pattern Sanding pad conditioner. Preferably, the total area of the raised pattern such as Hai is 5% to 8% of the area of the surface of the model; the raised pattern may be a dome, a circle, or an upright column (eg, a triangular prism, four a corner post, a hexagonal column, etc.) or an upright frustum shape (for example, a truncated cone, a triangular frustum, a quadrangular frustum, a hexagonal frustum, etc.), the plurality of raised patterns are regularly arranged evenly on the surface of the model; or, the raised patterns One of them may be dome-shaped or cylindrical, the other is elongated (may be a straight strip or a curved strip), and the plurality of elongated convex patterns are dome-shaped or cylindrical convex. The patterns are arranged at the center of the pattern at intervals of 'average distribution on the surface of the model. The diamond abrasive particles used in the present invention are high temperature and high pressure synthetic industrial diamonds. The particle size of the diamond abrasive grains is preferably between 14 mesh and 3 mesh in the US mesh and the spacing of the diamond abrasive grains is arranged. It is preferably 丨5 to 4.5 times 201127554 which is between the particle diameters. / The convex patterns have a convex height of 0.1 to 2 times the average particle diameter of the diamond abrasive grains, and preferably 0.2 to 1 times the average particle diameter of the diamond abrasive grains. . The substrate can be fabricated into a plastic substrate by injection molding or hot stamping (10) coffee-(4), or can be made of a metal substrate by electroforming or die-casting, or can be processed by electrical discharge, ultrasonic machining, or micro-machining. Milling, micro-grinding, laser processing, electron beam processing or ion beam processing, etc., to form a convex pattern on the surface of the substrate. The thickness of the adhesive layer is preferably 〇2 to twice the particle diameter of the diamond abrasive grains, and the coating method thereof is not particularly limited, and may be, for example, a roller coating, a coating, a spray coating, or a screen printing. Wait. The adhesive to be used is preferably a pressure-sensitive adhesive such as a gas-filled rubber pressure-sensitive adhesive, a styrene-butadiene rubber pressure-sensitive adhesive, an organic pressure-sensitive adhesive, a polyvinyl pressure-sensitive adhesive, a polyurethane pressure-sensitive adhesive or the like. The polishing pad conditioner obtained by the foregoing steps is composed of a resin layer and a plurality of diamond abrasive grains partially covered in the resin layer, the resin layer having a working surface on which the diamond abrasive grains are distributed. The working surface has a pattern transferred from the surface of the model, that is, the convex patterns on the surface of the model are written on the working surface to form a concave pattern, so that the working surface has a plurality of evenly distributed on the working surface. The recessed area, and the unrecessed portion of the working surface is an unrecessed area, and the total area of the recessed areas accounts for 20% to 80% of the area of the working surface. Preferably, the total area of the recessed areas is from 50% to 80% of the area of the working surface. The ratio of the total area of the recessed area to the area of the working surface, 201127554, can be determined by the number of diamonds that contact the polishing pad, the load, and the depth of the groove. And the height difference between the recessed area and the un-recessed area is equal to the convexity of the convex patterns, and similarly, the height difference between the concave area and the unembossed area is equal to the average grain of the diamond abrasive grains. 0.1 to 2 times the diameter is suitable, and is preferably 0.2 to 丨 times the average particle diameter of the diamond abrasive grains. The height difference between the recessed area and the unrecessed area may be adjusted according to the height of the bumps that may be formed by the diamond furrow. For example, if the polishing pad adjuster used for deeper depth of the diamond furrow has a larger bump formed by the furrow, the height difference between the recessed area and the unrecessed area may be larger. In addition, the portions of the diamond abrasive grains that protrude from the resin layer are the portions that enter the adhesive layer. Since the diamond abrasive grains are arranged on the adhesive layer, the apex thereof is close to the surface of the mold. The apex heights of the diamond abrasive grains in the recessed areas are substantially the same, and the apex of the diamond abrasive grains located in the non-recessed area are substantially the same, and the apex of the diamond abrasive grains located in the concave areas and the diamonds located in the non-recessed area The apex of the abrasive grain has a height difference equal to the convex height of the convex pattern. The apex of the diamond abrasive grain of the present invention means the end point of each diamond abrasive grain closest to the surface of the mold in the adhesive layer, or the highest point of the resin layer protruding when combined with the resin layer. <Specific Example 1> Preparation of substrate Referring to Fig. 1 and Fig. 2, a plastic substrate 1 made of polypropylene was produced by injection molding. The substrate 1 has an outer diameter of 110 mm, a thickness of 5 mm, and a circular model surface n having a diameter of 100 mm. The surface of the model u is formed with a plurality of 10 201127554 convex patterns (1) evenly distributed on the surface 11 of the model. The convex pattern 111 of this specific example is cylindrical, the cylindrical diameter is 2 mm, the convex height (8) is 50 μm, and the two-two convex pattern (1) (four) has a core spacing of 1 〇 2 of 36 faces. The total area of the raised pattern lu of this specific example accounts for about the area of the surface of the model. Forming an adhesive layer Referring to FIG. 3, a layer of adhesive layer 2 is coated on the surface of the substrate by a rubber roller, and the substrate i coated with the adhesive layer 2 is placed in a dust-free hot air. In the present case, it is dried at 25 C for 3 G minutes, and the thickness of the adhesive layer 2 is about 50 μm after drying. The adhesive used in this specific example is an aqueous gas-butyl rubber contact type adhesive produced by 3M Company, and the product type is TW 3〇〇. Arrange the diamond abrasive grains as shown in Fig. 4' by using a non-recorded steel sheet having a thickness of 〇lmm as a template. The template 3 is laser-drilled to form a plurality of circular perforations of the diameter of the circular perforation. The pitch is 〇4 coffee, the perforation μ is arranged in an array and is covered with a circular area having a diameter of 1 mm (not shown), and the template 3 is placed above the adhesive layer 2 and the circular area of the template 3 is made. Aligning the model surface U of the substrate 1, and then spreading a plurality of the iron abrasive grains 4 on the template 3, and gently sweeping the diamond abrasive grains 4' scattered on the template 3 with an acrylic brush to make the diamond abrasive grains 4 The person is dropped into the perforation 31 and adhered by the adhesive layer 2 to form a temporary bond. After each of the perforations 31 on the template 3 substantially accommodates one diamond abrasive grain 4, the excess diamond abrasive grains 4 that have not fallen into the perforations 31 are rided with an acrylic brush, and then the riser template 3' is temporarily bonded to Adhesive layer 2 and diamond abrasive grains 4 arranged in an array. The drill used in this specific example 201127554 abrasive grain 4 has a particle size ranging from 7 mesh to (10) mesh of the US mesh, and an average particle size of about 200 micrometers. It is produced by ΕΜΕΝ[ΕΜΕΝ· Company, model SDB1125. Referring to FIG. 5, a uniform pressure of about 5 kg/cm 2 is applied to the diamond abrasive grains 4 arranged on the adhesive layer 2 through a crepe film having a thickness of about 6 mm, and the shale abrasive grains 4 are further pressed into the adhesive. Layer 2 causes a portion of the diamond abrasive grain 4 to enter the adhesive layer 2 near the surface of the mold. In addition to the crepe film 5, other soft materials may be used to make the pressure uniform, such as natural rubber or nitrile rubber (NBR). The applied pressure can also be selected from a pressure in the range of 1 to 2 〇 kg/cm2. Formation of Resin Layer Referring to Fig. 6, a mold 61 is embedded in a mold 6 and the diamond abrasive grains 4 are deepened and bonded to the substrate 1 of the adhesive layer 2, and are clamped to the lower mold 62. The mold 6 is provided with a 0-type seal ring 63, an exhaust port 64, and a resin injection port 65. The vacuum is applied to the exhaust port 64 of the mold 6, so that the pressure in the cavity 66 is lower than 1 mbar, and the thermosetting resin is injected from the resin injection port 65. The thermosetting resin used in this specific example was obtained by mixing an epoxy resin (EPOFIX RESIN) manufactured by STRUERS A/S Co., Ltd. and a curing agent (EPOFIX HARDENER) at a weight ratio of 25:3. By vacuum impregnation, there is a stinging of the air in the cavity 66 and the gas adsorbed on the surface of the diamond abrasive grain 4, which will make the resin infiltrate more fully and reduce the resin and the diamond abrasive grain 4 The possibility of forming microscopic pores. Referring to Fig. 7, after the thermosetting resin is hardened at room temperature for 12 hours, a 12 201127554 demolding process is performed to disengage the hardened resin layer 7 from the surface of the mold 6 and the substrate together with the diamond abrasive grains 4 which are permanently bonded to the resin layer 7. . Next, the resin layer 7 has one side of the wrong stone abrasive 4 and the adhesive layer 2 soaked in a methyl ethyl ketone solvent and subjected to ultrasonic vibration for about 2 minutes, and then wiped with a non-woven cloth to remove the adhesive. The diamond abrasive grains 4 are exposed to the portion of the resin layer 7 and the adhesive layer 2 on the surface of the resin layer 7, so that the portion of the iron abrasive grains 4 originally covered by the adhesive layer 2 is exposed to the resin layer 7' and then washed with ultrasonic shock. , by blowing air with compressed air, you can get a resin layer 7 and diamond abrasive particles 4
所組成的具有表面凹陷圖案的樹脂黏結研磨墊調節器( 參閱圖8 )。 為了使脫模程序更易於進行，當然亦可在模具6内面 與基板1的模型表面1!塗覆適當的脫模劑，如聚乙烯醇 (polyvinyl alcohol)、聚四 a 乙稀（P〇lytetrafluoroethylene)、 聚二甲基矽氧烷（dimethyl p〇lysil〇xane)或蠟等。 研磨墊調節器 參閱圖8與圖9,說明具體例…具有表面凹陷圖案的 樹脂黏結研磨墊調節器100,由一樹脂層7和多數個部分包 覆在樹脂層7内之鑽石磨粒4所構成，樹脂層7具有一分 佈有該等鑽石磨粒4之工作表面71，且卫作表面71具有多 數個平均分佈於工作表面71的凹陷區711，而工作表面71 中未凹陷的部分為未凹陷區712。在圖8中，因鑽石磨粒4 尺寸小且排列密集，僅以排列密集的小點表示。 樹脂層7的工作表面71是由基板丨的模型表面u轉寫 而成，工作表面71的直徑與模型表面u同樣為i〇〇mm， 13 201127554 模型表面11的凸起圖案U1在工作表面71形成凹陷區7ιι ’故凹陷區711與凸起圖案i"同樣為圓柱形且直徑為 2mm，各凹陷區71ι的凹陷深度7〇1約為％微米，兩兩凹 陷區711的中心間距702為3 6mm。全部凹陷區7ΐι的總面 積約佔24%工作表面71的面積。 由於排列鑽石磨粒4時，有施加壓力而使各鑽石磨粒4 的頂點接近基板1的模型表面u，因此鑽石磨粒4與樹脂 層7結合後，位於未凹陷區712的各鑽石磨粒4的頂點高 度大致相同，且位於凹陷區711的各鑽石磨粒4的頂點高度 大致松同，而因凹陷區711的凹陷深度7〇1約5〇微米，所 以位於凹陷區711的鑽石磨粒4之頂點與位於未凹陷區712 的鑽石磨粒4之頂點具有約5〇微米的高度差7〇3。 在本具體例中’排列在1 〇〇mm直徑的工作表面71上的 所有鑽石磨粒4數量約為49,〇〇〇顆，而位於未凹陷區712 的鑽石磨粒4數量約為37,2〇〇顆。因為位於未凹陷區712 的鑽石磨粒4才能接觸研磨墊用以在研磨墊犁溝，故本具 體例能接觸研磨墊的鑽石磨粒4數量最多約為37,2〇〇顆。 <具體例2> 具體例2的實施步驟與具體例1大致相同，於此不再 重述’僅以具體例2製成之具有表面凹陷圖案的樹脂黏結 研磨塾調節器1〇〇’來說明具體例2與具體例1的差異。 參閱圖10’具體例2的各凹陷區711，為圓柱形，且直 徑約為4mm，凹陷深度約為100微米，兩兩凹陷區711，的 中心間距702’約為5mm，該等凹陷區711，沿中心線夾角為 14 201127554 :二三個方向規則排列，全部凹陷區7ιι，的總面_ 仕1〇〇咖的工作表面π面積的則，因此，位於未凹陷 區712,的鑽石磨粒4，約為 於禾凹陷 磨粒4,尺寸小且排列密隼：圖 <具體紗 f讀㈣小點表示。 具體例3的實施步驟與具體例1大致相同，於此不再 重=僅以具體例3製成之具有表面凹陷圖案的樹脂黏結 研磨墊調節器贈，來說明具體例3與具體例^差異。A resin bonded abrasive pad conditioner having a surface recess pattern (see Fig. 8). In order to make the demolding process easier, it is of course also possible to apply a suitable release agent such as polyvinyl alcohol or polytetraethylene (P〇lytetrafluoroethylene) on the inner surface of the mold 6 and the mold surface 1 of the substrate 1. ), dimethyl p〇lysil〇xane or wax. Polishing pad adjuster Referring to Fig. 8 and Fig. 9, a specific example of a resin bonded polishing pad conditioner 100 having a surface recessed pattern, a resin layer 7 and a plurality of diamond abrasive grains 4 partially covered in a resin layer 7 are illustrated. The resin layer 7 has a working surface 71 on which the diamond abrasive grains 4 are distributed, and the visor surface 71 has a plurality of recessed regions 711 evenly distributed on the working surface 71, and the unembossed portion of the working surface 71 is The recessed area 712. In Fig. 8, since the diamond abrasive grains 4 are small in size and densely arranged, they are represented only by small dots arranged in a dense arrangement. The working surface 71 of the resin layer 7 is transferred from the model surface u of the substrate ,, and the diameter of the working surface 71 is the same as the surface u of the model i, 13 201127554 The convex pattern U1 of the model surface 11 is on the working surface 71 Forming the recessed area 7 ιι ', the recessed area 711 and the raised pattern i" are also cylindrical and have a diameter of 2 mm, the recessed depth 7 〇 1 of each recessed area 71 ι is about % micrometer, and the center-to-center spacing 702 of the two recessed areas 711 is 3 6mm. The total area of all recessed areas 7 ΐ is approximately 24% of the area of the working surface 71. Since the diamond abrasive grains 4 are arranged with pressure applied so that the apexes of the respective diamond abrasive grains 4 are close to the mold surface u of the substrate 1, the diamond abrasive grains 4 are combined with the resin layer 7, and the diamond abrasive grains located in the non-recessed regions 712 are applied. The apex heights of 4 are substantially the same, and the heights of the apexes of the diamond abrasive grains 4 located in the recessed regions 711 are substantially the same, and the diamond abrasive grains located in the recessed regions 711 due to the recessed depths of the recessed regions 711 of 7〇1 are about 5 μm. The apex of 4 has a height difference of about 7 〇 3 and a height difference of 7 〇 3 from the apex of the diamond abrasive grain 4 located in the unrecessed area 712. In this embodiment, the number of all diamond abrasive grains 4 arranged on the working surface 71 of the diameter of 1 mm is about 49, and the number of diamond abrasive grains 4 located in the non-recessed area 712 is about 37. 2 〇〇. Since the diamond abrasive grains 4 located in the unrecessed area 712 can contact the polishing pad for furrowing in the polishing pad, the number of diamond abrasive grains 4 which can be contacted with the polishing pad can be up to about 37, 2 pieces. <Specific Example 2> The implementation procedure of Concrete Example 2 is substantially the same as that of Concrete Example 1, and the resin-bonded abrasive 塾 adjuster 1' having a surface depression pattern made only by the specific example 2 is not repeated here. The difference between Specific Example 2 and Specific Example 1 will be described. Referring to FIG. 10', each recessed area 711 of the specific example 2 is cylindrical, and has a diameter of about 4 mm, a recessed depth of about 100 μm, and a center-to-center spacing 702' of the two recessed areas 711 of about 5 mm. The recessed areas 711 , along the center line angle is 14 201127554: two or three directions are regularly arranged, all the recessed areas 7 ιι, the total surface _ 仕 1 〇〇 的 的 的 工作 工作 工作 工作 , , , 因此 因此 因此 因此 因此 712 712 712 712 4, about the granules of the granules 4, small in size and arranged in a dense manner: Figure < concrete yarn f read (four) small dots. The implementation steps of the specific example 3 are substantially the same as those of the specific example 1, and the weight of the specific example 3 is different from that of the concrete example of the specific example 3. .
參閱圖1卜具體例3的各凹陷區711，，為正方柱形且 正方柱的邊長約為7mm ’凹陷深度約為1〇〇微米兩兩凹 陷區7U”的中心間距7〇2，，約為1〇mm，全部凹陷區川”的 總面積約佔直徑100_的工作表面71，，面積的49%，因此Referring to FIG. 1 , each of the recessed regions 711 of the specific example 3 has a square pillar shape and a side length of the square pillar is about 7 mm, and a center-to-center spacing 7〇2 of the recessed depth of about 1 μm and two recessed regions 7U”, About 1〇mm, the total area of all the depressions is about 70% of the working surface 71, and 49% of the area.
，位於未凹陷區712”的鑽石磨粒4，，約為24,9〇〇顆。在圖U 中’因鑽石磨纟4”尺寸小且排列密集，僅以排列密集的小 點表示。 <發明的效果> 鑽石磨粒犁溝實驗 以單顆鑽石磨粒在不同荷重下，在發泡聚氨酯（ polyurethane f0am)製成的研磨墊表面犁溝，測量溝槽的深 度並觀察溝槽的形貌。將鑽石磨粒的不同荷重與其在研磨 墊表面舉溝形成的溝槽深度的結果記載於表1，並繪製兩者 的關係圖如圖12所示。 表1 鑽石磨粒荷重（N) 0.1 0.4 0.7 ------ 10 溝槽深度（um) 21 38 46 A · u ---, 79 15 201127554 由圖12可知，鑽石磨粒的荷重越大，在研磨墊上形成 的溝槽深度越深。 再由圖13至圖16的電子顯微鏡（SEM)影像來觀察溝 槽形貌，其中圖13、14、15、16分別為荷重〇.ιΝ、〇 4N、 0.7N、1.ON的鑽石磨粒在研磨墊所形成的溝槽影像。從圖 13至〗6皆可看到一道在研磨墊上切削所形成的溝槽其磨 損破壞機構可解釋為··研磨墊材料遭受尖銳鑽石切刀刺入 後’由於黏著與機械互鎖（mechanical interl〇ck)效應在鑽 石切刃處造成大量應力集中，當研磨墊材料無法再進一步 承受大量塑性變形後，研磨墊材料被撕裂堆積在溝槽的軌鲁 跡上。通常被撕裂的研磨墊材料仍有部分附著在溝槽的一 側或另一側，沿著溝槽軌跡形成不連續的點狀凸點形貌。 比較圖13至圖16可知，鑽石磨粒荷重越大，溝槽的深度 越深，而沿著溝槽軌跡上的不連續點狀凸點的體積也越大 。因此，在適當的荷重下，鑽石磨粒的切刀會挖開研磨墊 表面已經鏡面化的表層，重新讓下層的孔洞露出並犁出 適當深度的微溝槽，讓研磨墊表面的孔洞互相連通，有利 於研磨液的輸送與涵養，提高研磨液的利用率，不僅可以鲁 有效地調節研磨墊，更可以在研磨墊表面製造出適當大小 的點狀凸點以傳遞研磨壓力，維持穩定的晶圓移除率。 發明功效 本發明具有表面凹陷圖案的樹脂黏結研磨墊調節器1〇〇 100、100”，能夠以較大的排列密度排列鑽石磨粒4、4， 4，並藉由工作表面71、71，、71，，的凹陷區711、711，、 16 201127554 711”來降低接觸研磨墊的鑽石磨粒4、4,、4”數量，以增加 位於未凹陷區712、712，、712，，的接觸鑽石磨粒4、4，、曰4” 的平均荷重，而使接觸鑽石磨粒4、4，、4”（用以㈣的鑽 石磨粒）有足夠大的荷重’能在研磨墊表面製造大量適當 大小的凸點，有利於黏附更多的研磨粒子，和傳遞適當的 研磨壓力，可以有效降低晶圓表面的微刮傷數，並進一步 提昇晶圓移除率和降低曰曰曰®以均自性（whhin-wafer nonuniformity，WIWNU)。The diamond abrasive grains 4, located in the unrecessed area 712", are about 24, 9 inches. In Figure U, 'Diamond Diamond 4' is small in size and densely packed, and is only indicated by densely packed dots. <Effects of the Invention> The diamond abrasive grain furrow experiment measures the depth of the groove and observes the groove by measuring the groove depth on the surface of the polishing pad made of foamed polyurethane (monomer f0am) under a single load of a single diamond abrasive grain. The appearance. The results of the different loads of the diamond abrasive grains and the groove depth formed by the groove on the surface of the polishing pad are shown in Table 1, and the relationship between the two is shown in Fig. 12. Table 1 Diamond abrasive load (N) 0.1 0.4 0.7 ------ 10 Groove depth (um) 21 38 46 A · u ---, 79 15 201127554 It can be seen from Figure 12 that the greater the load of diamond abrasive grains The depth of the groove formed on the polishing pad is deeper. The morphology of the trench is observed by electron microscopy (SEM) images of Figures 13 to 16, wherein Figures 13, 14, 15, and 16 are diamond abrasive grains of Ν.Ν, 〇4N, 0.7N, and 1.ON, respectively. An image of the groove formed by the polishing pad. From Fig. 13 to Fig. 6, we can see a groove formed by cutting on the polishing pad. The wear and tear mechanism can be explained as... The polishing pad material is subjected to the sharp diamond cutter after the penetration. Due to the adhesion and mechanical interlocking (mechanical interl The 〇ck) effect causes a large amount of stress concentration at the diamond cutting edge. When the polishing pad material can no longer undergo a large amount of plastic deformation, the polishing pad material is torn and accumulated on the track trace of the groove. The generally torn abrasive pad material still partially adheres to one side or the other of the grooves, forming discontinuous point-like bump topography along the groove tracks. Comparing Fig. 13 to Fig. 16, it can be seen that the larger the diamond abrasive grain load is, the deeper the depth of the groove is, and the larger the volume of the discontinuous point bump along the groove track is. Therefore, under the proper load, the cutter of the diamond abrasive will dig the surface of the surface of the polishing pad that has been mirror-finished, and then re-expose the hole of the lower layer and plow the micro-groove of appropriate depth to connect the holes on the surface of the polishing pad. It is beneficial to the transportation and conservation of the polishing liquid, and improves the utilization rate of the polishing liquid. It can not only effectively adjust the polishing pad, but also can produce a spot-like bump on the surface of the polishing pad to transmit the grinding pressure and maintain the stable crystal. Round removal rate. EFFICIENCY OF THE INVENTION The present invention has a resin-bonded polishing pad conditioner 1 〇〇 100, 100" having a surface depression pattern, which is capable of arranging diamond abrasive grains 4, 4, 4 with a large arrangement density, and by working surfaces 71, 71, 71,, the recessed areas 711, 711,, 16 201127554 711" to reduce the number of diamond abrasive grains 4, 4, 4" contacting the polishing pad to increase the contact diamonds located in the unrecessed areas 712, 712, 712, The average load of the abrasive grains 4, 4, and 4", so that the diamond abrasive grains 4, 4, 4" (for the diamond abrasive grains used in (4) have a sufficient load" can make a large amount of appropriate on the surface of the polishing pad. The size of the bumps helps to adhere more abrasive particles, and delivers the appropriate grinding pressure, which can effectively reduce the number of micro-scratches on the wafer surface, and further improve the wafer removal rate and reduce the 曰曰曰® Whhin-wafer nonuniformity (WIWNU).
再者’因為接觸鑽石磨粒4、4,、4，，有足夠大的荷重， 能夠在研磨墊表片犁出適當深度的微溝槽，讓研磨墊表面 的孔洞互相連通，有利於研磨液的輸送與涵養，提高研磨 液的利用率。 而且，本發明可具有較高的鑽石磨粒4、4,、4”排列密 度’且錢石磨粒4、4’、4”之頂點高度大致相同，而具有 較佳的接觸鑽石錄4、4,、4”數量，能使研磨塾調節器 ⑽、1〇〇’、100”的切削率不易鈍化，可維持較長時間的晶 圓移除率穩定性，並能降低晶圓間的不均勻性（心知如· wafer nonunif〇rmity，WTWNU )，而且不會過度磨除研磨: ，故可延長研磨墊的使用壽命，減少CMp機台的非製程時 間0 此外，參閱圖17，以具體例1為例說明，本發明具有 表面凹陷圖案的樹脂黏結研磨墊調節器100在—研磨塾8 表面工作時，藉由未凹陷區712的鑽石磨粒4在研磨墊8 表面形成微溝槽81及凸點82，而凹陷區711可以暫時儲存 17 201127554 磨屑83和研磨液84，加大容屑間，而不妨礙未凹陷區7i2 的鑽石磨粒4的犁溝作業，同時凹陷區711的鑽石磨粒4可 以梳理凸點82，分散研磨液84以及掃除磨屑83，因此能 降低晶圓的表面缺陷。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一俯視示意、圖，說明本發明具有表面凹陷圖案鲁 的樹脂點結研磨塾調節器及製作方法的具體例i中製備基 板的實施步驟； 圖2是一圖1的局部截面示意圖，說明該基板； 圖3是一示意圖，說明該具體例丨形成膠黏劑層的實 施步驟； 圖4是一不意圓，說明該具體例丨排列鑽石磨粒的實 施步驟； 圖5是一示意圖，說明該具體例i施加壓力於鑽石磨_ 粒的實施步驟； 圖6是一示意圖，說明該具體例丨利用模具形成樹脂 層的實施步驟； 圖7是一示意圖，說明該具體例丨形成樹脂層後脫模 的實施步驟； 圖8是一俯視示意圖，說明該具體例丨的研磨墊調節 18 201127554 圖9是一圖8的局部截面示意圖，說明該研磨墊調節 32 · 器， 圖10是一俯視示意圖，說明本發明具有表面凹陷圖案 的樹脂黏結研磨墊調節器的具體例2 ; 圖11疋一俯視示意圖，說明本發明具有表面凹陷圖案 的樹脂黏結研磨墊調節器的具體例3 ; 圖12是一說明鑽石磨粒的荷重與其在研磨墊表面形成 微溝槽深度的關係曲線圖； 圖13是一鑽石磨粒荷重〇 1N在研磨墊表面形成微溝槽 的電子顯微鏡影像照片； 圖14是一鑽石磨粒荷重〇 4N在研磨墊表面形成微溝槽 的電子顯微鏡影像照片； 圖丨5是一鑽石磨粒荷重〇 7N在研磨墊表面形成微溝槽 的電子顯微鏡影像照片； ® 16是—鑽石磨粒荷重1.0N在研磨墊表面形成微溝槽 的電子顯微鏡影像照片；及 圖17 9 疋一示意圖，說明該具體例1的研磨墊調節器在 -研磨塾進行調節作業。 19 201127554 【主要元件符號說明】 100 ···. …研磨墊調節器 7 ....... …樹脂層 100,… …研磨墊調節器 71…… …工作表面 100，，… …研磨墊調節器 71’……· …工作表面 1 ....... …基板 7 Γ，…· …工作表面 11…… …模型表面 711 ···· …凹陷區 111 ··· …凸起圖案 71Γ ··· …凹陷區 101 ···· …凸出高度 711，，··· …凹陷區 102 ··· …中心間距 712 ···· …未凹陷區 2 ....... …膠黏劑層 712,… …未凹陷區 3 ....... …模板 712，，··· …未凹陷區 31…… …穿孔 701 ··· …凹陷深度 4 ....... …鑽石磨粒 702 ···· …中心間距 4,…… …鑽石磨粒 702,… …中心間距 4”…… …鑽石磨粒 702，，.·. …中心間距 5 ....... …矽膠片 703 ···_ …高度差 …招目 0 ....... 〇 ....... 棋具 〇 * *' ^ m 3fcr 61…… …上模 81…… …微溝槽 62…… …下模 82…… …凸點 Q ^...... 〇 J...... Ο J …磨/肖 64…… …排氣口 84…… …研磨液 65…… —知ί月a注入口 66…… •…模腔Furthermore, 'because of the contact with the diamond abrasive grains 4, 4, 4, there is a large enough load to plow the micro-grooves of appropriate depth on the polishing pad surface, so that the holes on the surface of the polishing pad communicate with each other, which is beneficial to the polishing liquid. Transportation and conservation, improve the utilization of the slurry. Moreover, the present invention can have a higher diamond abrasive grain 4, 4, 4" arrangement density ' and the apex height of the rock stone abrasive grains 4, 4', 4" is substantially the same, and has a better contact diamond record 4, The 4, 4" quantity can make the cutting rate of the grinding 塾 adjuster (10), 1〇〇', 100" difficult to passivate, maintain the stability of wafer removal rate for a long time, and can reduce the inter-wafer Uniformity (known as wafer nonunif〇rmity, WTWNU), and does not excessively remove the grinding: so it can extend the life of the polishing pad and reduce the non-process time of the CMp machine. 0 In addition, refer to Figure 17, to For example, the resin bonded abrasive pad conditioner 100 having the surface recess pattern of the present invention forms a microgroove 81 on the surface of the polishing pad 8 by the diamond abrasive grains 4 of the unrecessed region 712 when the surface of the polishing pad 8 is operated. And the bump 82, and the recessed area 711 can temporarily store the 17 201127554 wear debris 83 and the polishing liquid 84 to increase the inter-chip shaving without disturbing the furrow operation of the diamond abrasive grain 4 of the unrecessed area 7i2, while the recessed area 711 Diamond Abrasive 4 can comb the bumps 82, disperse the slurry 84 and sweep The wear debris 83, therefore, can reduce surface defects of the wafer. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are all It is still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a top plan view showing a step of preparing a substrate in a specific example i of a resin dot knot polishing 塾 adjuster having a surface recess pattern and a manufacturing method; FIG. 2 is a view 1 is a partial cross-sectional view showing the substrate; FIG. 3 is a schematic view showing the steps of forming the adhesive layer in the specific example; FIG. 4 is a schematic diagram showing the implementation steps of arranging the diamond abrasive grains in the specific example; Figure 5 is a schematic view showing the specific example i of applying pressure to the diamond grinding granules; Figure 6 is a schematic view showing the specific example of the step of forming a resin layer using a mold; Figure 7 is a schematic view showing the DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 8 is a top plan view illustrating a polishing pad adjustment of the specific example 18 201127554 FIG. 9 is a partial cross-sectional view of FIG. 8 illustrating the polishing pad adjustment 32 . FIG. 10 is a top plan view showing a specific example 2 of the resin bonded polishing pad adjuster having a surface recess pattern according to the present invention; FIG. Specific Example 3 of a resin bonded abrasive pad conditioner having a surface depression pattern; FIG. 12 is a graph showing the relationship between the load of the diamond abrasive grains and the depth of the micro-groove formed on the surface of the polishing pad; FIG. 13 is a diamond abrasive grain load.电子 1N forms an electron microscope image of the micro-groove on the surface of the polishing pad; FIG. 14 is an electron microscope image of a diamond abrasive grain load 〇 4N forming a micro-groove on the surface of the polishing pad; FIG. 5 is a diamond abrasive grain load 〇 7N electron micrograph image of the micro-groove formed on the surface of the polishing pad; ® 16 is an electron microscope image of a diamond grindstone load of 1.0 N forming a micro-groove on the surface of the polishing pad; and Figure 17 is a schematic view showing the specific The polishing pad conditioner of Example 1 was subjected to an adjustment operation in the -grinding crucible. 19 201127554 [Explanation of main component symbols] 100 ···. ... polishing pad adjuster 7. . . . resin layer 100, ... polishing pad adjuster 71 ... ... working surface 100,, ... polishing pad Regulator 71'...·...Working surface 1 . . . ...substrate 7 Γ,...·Working surface 11... Model surface 711 ···· ... recessed area 111 ··· 71Γ ··· ... recessed area 101 ···· ... protruding height 711, ..... ... recessed area 102 ··· ... center spacing 712 ····...not recessed area 2 ......... Adhesive layer 712, ... not recessed area 3 . . . template 712, ..... ... not recessed area 31 ... ... perforation 701 · · · ... recess depth 4 ...... ... diamond abrasive grain 702 ···· ... center spacing 4, ... diamond abrasive grain 702, ... center spacing 4" ... ... diamond abrasive grain 702,,..... center spacing 5 ..... .. ...矽片703···_ ...height difference...eyes 0....... 〇....... Chess 〇* *' ^ m 3fcr 61...... ...Upper 81......... Micro-groove 62...the lower die 82...the bump Q ^...... 〇J...... Ο J ... Grinding / Shaw 64... ...exhaust port 84... ...grinding liquid 65... - knowing ί月a injection port 66... •... Cavity
2020