TW201126754A - Method for producing semoconductor light-emitting element, and photosensitive composition used for the method for producing semiconductor light-emitting element - Google Patents

Abstract

Provided is a method for producing a semiconductor light-emitting element having a current blocking layer, which is a method for producing a semiconductor light-emitting element capable of forming a current blocking layer of various shapes on various positions or layers without involving an etching process. Also provided are a semiconductor light-emitting element obtained by means of the method for producing a semiconductor light-emitting element and a photosensitive composition used in the method for producing a semiconductor light-emitting element. The method for producing a semiconductor light-emitting element having a current blocking layer is characterized by forming a pattern which can be obtained from the photosensitive composition by means of the lithography method and the pattern is used as the current blocking layer.

Description

201126754 六、發明說明： 【發明所屬之技術領域】 本發明係關於半導體發光元件之製造方法，半導體發 光元件及半導體發光元件之製造方法所用之感光性組成物 【先前技術】 Φ 半導體發光元件之領域中’爲了使活性層之發光區域 不位在光出光側之不透明電極之正下方，或者使活性層之 發光區域不位在光出光側之電極之正下方以緩和電流局部 集中在活性層，同時爲了抑制半導體基板中之光吸收，故 在半導體發光元件之內部設置稱爲電流阻止層或電流狹窄 層之絕緣膜，而提高發光效率之技術爲已知（專利文獻1〜 8卜 電流阻止層，依據半導體發光元件之功能，有必要以 φ 各種形狀形成覆蓋於各種位置或層上，例如覆蓋於電流擴 散層上之形狀。過去，電流阻止層可藉由重複進行CVD-TEOS、蝕刻等製程而形成。 [先前技術文獻] [專利文獻] [專利文獻1]特開2009- 1 7065 5號公報 [專利文獻2]特開2 007- 1 73 5 3 0號公報 [專利文獻3]特開2007- 1 5 7778號公報 [專利文獻4]特開2005-294870號公報 201126754 [專利文獻5]特開2004-296979號公報 [專利文獻6]特開2004-047662號公報 [專利文獻7]特開2003-243703號公報 [專利文獻8]特開2003-8684 1號公報 【發明內容】 [發明欲解決之課題] 然而，過去之電流阻止層之形成製程由於經過複數道 製程，故會產生作業性降低，良率降低，成本增加等問題 ’同時藉蝕刻等之製程，因在既形成之半導體層上產生缺 陷而伴隨著結晶品質下降而發生發光效率降低等之問題等 ，該製程具有該種問題。 本發明係爲解決上述問題而完成者，其目的係提供半 導體發光元件之製造方法、半導體發光元件及該半導體發 光元件之製造方法使用之感光性組成物，該方法係具有電 流阻止層之半導體發光元件之製造方法，其可在各種位置 或層上簡易地形成各種形狀之電流阻止層。 [用以解決課題之手段] 本發明列舉爲例如以下之樣態。 &lt;1&gt;一種半導體發光元件之製造方法，其爲具有電流 阻止層之半導體發光元件之製造方法，其特徵爲利用微影 法形成由感光性組成物所得之圖型，且以該圖型作爲電流 阻止層（以下亦稱爲「第一實施形態」）。 -6 - 201126754 &lt;2&gt;如前述&lt;1&gt;項所述之半導體發光元件之製造方法， 其中前述半導體發光元件具有半導體層、形成於前述半導 體層上之電流擴散層、形成於前述電流擴散層上之電極、 不與前述電極鄰接而位於電極下方且以前述電流擴散層覆 蓋之電流阻止層（以下亦稱爲「第二實施形態」）。 &lt;3&gt;如前述&lt;1&gt;或&lt;2&gt;項所述之半導體發光元件之製造 方法，其中前述感光性組成物含有聚矽氧烷（A)與感光性 I 酸產生劑（B)(以下亦稱爲「第三實施形態」）。 &lt;4&gt;一種半導體發光元件，其特徵爲藉由如前述&lt;1；&gt;至 &lt;3&gt;項中任一項所述之半導體發光元件之製造方法所獲得（ .以下亦稱爲「第四實施形態」）。 &lt;5&gt;—種感光性組成物，其特徵爲其係用於如前述 或&lt;2&gt;項所述之半導體發光元件之製造方法中（以下亦稱爲 「第五實施形態」）。 &lt;6&gt;如前述&lt;5&gt;項所述之感光性組成物，其含有聚矽氧 φ 烷（A)與感光性酸產生劑（B)(以下亦稱爲「第六實施形態」 )° &lt;7&gt;—種半導體發光元件’其特徵爲具有電流阻止層 ’該電流阻止層利用D D - M A S法，以2 9 S i - N M R測定時獲 得之源自Q 4之訊號之積分比率，以全積分比率設爲1 〇 〇 % 時，爲50%以下。 &lt;8 &gt;如則述&lt;7&gt;項所述之半導體發光元件，其具有利用 DD-MAS法以nsi_NMR測定時顯示源自τ之訊號之電流 阻止層。 201126754 [發明效果] 依據第一實施形態’具有電流阻止層之半導體發光元 件之製造方法中，由於可不經由上述製程中具有該問題之 蝕刻等製程，可在各種位置或層上形成各種形狀之電流阻 止層，故可消除製程中之該問題。 依據第二實施形態，由於可減少電流阻止層形成後形 成其他層，故在該其他層形成時’可防止對電流阻止層造 成之製程損傷（絕緣性下降）。 依據第三實施形態，於LED或半導體雷射等之以無 機成分作爲主成分之半導體發光元件中，由於與鄰接於電 流阻止層之其他層之元素成分接近，故可形成與鄰接於電 流阻止層之其他層之密著性優異之電流阻止層。據此，可 消除半導體發光元件之製造方法中製程上之問題。而且， 由於可在階差之半導體層中正確地形成目的形狀，故可使 製程寬裕度變廣。 依據第四實施形態，由於係利用消除製程中該問題之 半導體發光元件之製造方法獲得之半導體發光元件，故成 爲發光效率等性能優異之半導體發光元件。 依據第五實施形態，可有效地使用消除製程之該問題 之半導體發光元件之製造方法。 依據第六實施形態，由於可形成與鄰接於電流阻止層 之其他層之密著性優異之電流阻止層，故可更有效地使用 消除製程中該問題之半導體發光元件之製造方法。 -8 - 201126754 【實施方式】 [1 ]半導體發光元件 本發明之半導體發光元件爲第四實施形態者，且爲藉 由後述之『[2]半導體發光元件之製造方法』獲得者。半導 體發光元件之製造方法係依據半導體發光元件之構成或形 狀考量各種順序，但本發明之半導體發光元件只要具有依 據後述之『[2-1]電流阻止層之形成方法』形成之電流阻止 層即無特別限制。 半導體發光元件之電流阻止層之構成或形狀列舉爲電 流阻止型構造及電流狹窄型構造。另外，半導體發光元件 之電極構成或形狀列舉爲上部電極與下部電極成對向之一 般型，以及上部電極與下部電極同向之溝槽型。又，半導 體發光元件之半導體層之構成或形狀列舉爲例如雙異質 (Double H etero)接合型及量子井接合型。 半導體發光元件之構成或形狀之具體例列舉爲例如特 開2009-170655號公報、特開2007-173530號公報、特開 2007-157778號公報、特開2005-294870號公報、特開2004-296979號公報、特開20 04-047662號公報、特開2003-243703 號公報、特開2003-86841號公報、特開2002-329885號公報 、特開2002-06422 1號公報、特開2001-274456號公報、特開 200 1 -1 96629號公報、特開2001-1 771 47號公報、特開2001-068786號公報 '特開2000-261029號公報、特開2000-1 24502 號公報、特開平10-294531號公報、特開平09-312442號公報 -9- 201126754 及特開平09-23 79 1 6號公報中所述之構成或形狀。 又’本發明中所謂「電流阻止層」意指爲使活性層之 發光區域不位在光出光側之不透明電極正下方所用者，並 非狹義之電流阻止層，而是包含用以使活性層之發光區域 不位在光出光側之電極正下方而可緩和對活性層之局部電 流集中’同時抑制半導體基板中之光吸收而使用之電流狹 窄層之層。 本發明之半導體發光元件之代表例爲圖1所示之電流 阻止型之半導體發光元件之剖面圖。又，圖1中所示之半 導體發光元件亦爲第二實施形態中之該第四實施形態之一 例。 圖1之半導體發光元件係在藍寶石基板100上依序設 置緩衝層101、半導體層110、電流擴散層120、上部電極 131。接著’以不與前述上部電極131鄰接而位在上部電 極下方且以前述電流擴散層120覆蓋之方式設置電流阻止 層140。半導體層11〇爲雙異質接合型，且於緩衝層101 上以η型包覆層111、活性層112、p型包覆層113之順序 設置。下部電極132爲設於前述η型包覆層之一部份上且 與上部電極131同向設置。 又’圖1之半導體發光元件由於以上部電極i 3丨側爲 發光面’故電流擴散層成爲摻雜錫之氧化銦等之透明性電 極。 緩衝層1 0 1、半導體層1 1 0、電流擴散層1 20、上部電 極1 3 1及下部電極可藉習知方法，例如氣相磊晶成長法、 -10- 201126754 液相磊晶成長法 '氫化氣相成長法、有機金屬氣相成長法 (MOCVD法）、分子束磊晶法（MBE法）、有機金屬分子線磊晶 法（MOMBE法）及濺鍍法等形成膜後，視需要以光阻作爲 遮罩利用蝕刻或硏削形成。又，電流阻止層可利用後述之 『[2 -1 ]電流阻止層之形成方法』形成。 上述各種層以外，亦可依據半導體發光元件之構成或 形狀形成用以使光增幅用之反射層等。又，可使用藍寶石 φ 基板以外之基板等。 尤其是電流阻上層大多具有各種形狀之情況。例如， 可具有正方體、長方體等四角柱以及圓柱、圓錐等形狀。 本發明爲利用微影法形成由感光性組成物獲得之圖型，且 由於以該圖型作爲電流阻止層，故可將電流阻止層加工成 各種形狀。 U]半導體發光元件之製造方法 % 本發明之半導體發光元件之製造方法係依據半導體發 光元件之構成及形狀而考量各種順序，但由於具有後述之 『[2-1]電流阻止層之形成方法』中之特徵，故只要是依據 ^ [ 2 · 1 ]電流阻止層之形成方法』中所述之方法形成電流阻 止層，則無特別限制。尤其，本發明之半導體發光元件之 製造方法除使用前述之『[1]半導體發光元件』中列舉之文 獻所述之製造方法’及後述『[2 -1 ]電流阻止層之形成方法 』中所述之形成方法以外’亦可依據半導體發光元件之構 成或形狀使用各種實施形態。 -11 - 201126754 本發明之半導體發光元件之製造方法之代表例爲針對 圖2之電流阻止型之半導體發光元件（氮化物半導體發光 元件）之製造方法加以表示。又，圖2所示之半導體發光 元件之製造方法亦爲第二實施形態之一例。 首先’如圖2(a)所示，利用有機金屬氣相成長法，在 藍寶石基板200上使緩衝層201及η型GaN等之η型包覆 層211、InGaN/GaN等活性層212及ρ型GaN等之ρ型包 覆層213等之半導體層依序成長。 接著’爲了使形成下部電極232之η型包覆層211之 表面露出，故在圖2(a)之基板上形成光阻遮罩（未圖示）， 且如圖2(b)之剖面圖所示，藉由去除未形成光阻遮罩（未 圖示）之部分的半導體層210之一部分，使η型包覆層211 之表面露出。隨後，去除光阻遮罩（未圖示）。 接著’如圖2(c)所示，利用下述『[2-1]電流阻止層之 形成方法』中所述之電流阻止層之形成方法，在ρ型包覆 層213上形成電流阻止層240。隨後，以覆蓋前述電流阻 止層240之方式形成由摻雜錫之氧化銦所組成之電流擴散 層 2 2 0 〇 接著，爲了在電流擴散層220上形成上部電極231， 在η型包覆層211上形成下部電極232，而於形成光阻圖 型後，藉由真空蒸鍍等形成上部電極231及下部電極232 ，可製造電流阻止型之半導體發光元件（圖2(d))。 又，圖2之電流阻止型之半導體發光元件之製造方法 係以上述之（a)、（b)、（c)及（d)之順序製造，但並不限於該 201126754 順序，亦可適當改變其順序。且，亦可形成用以保護半導 體層之保護膜。 [2 -1 ]電流阻止層之形成方法 本發明之半導體發光元件之製造方法中之電流阻止層 之形成方法爲利用微影法形成自感光性組成物獲得之圖型 ’以該圖型作爲電流阻止層者。此處所謂微影法係在由感 φ 光性組成物獲得之塗膜上，視需要透過遮罩，選擇性照射 輻射線（波長未限定），隨後藉由顯像形成圖型之方法之總 稱。 首先，將感光性組成物塗佈於基板上，於含有溶劑等 揮發性成分之感光性組成物之情況下，使溶劑揮發形成塗 膜。又’針對感光性組成物之細節，敘述於後述『[3 ]感光 性組成物』中。前述基板爲在半導體層 '電流擴散層等層 之上形成電流阻止層之層，爲可依據半導體發光元件之構 φ 成或形狀適宜選擇者。又，塗佈感光性組成物之方法可採 用例如浸漬法、噴霧法、棒塗佈法、輥塗佈法、旋轉塗佈 法等各種塗佈方法。塗佈膜之厚度可藉由調整塗佈手段、 樹脂組成物溶液之固體成分濃度及黏度等而適宜地控制。 例如，旋轉塗佈法時，可藉由改變轉數控制塗膜之厚度。 接著，視需要透過具有所需圖型之遮罩，使所得塗膜 曝光。曝光所用之輻射線列舉爲由例如低壓水銀燈、高壓 水銀燈、金屬鹵素燈、g線步進器、h線步進器、i線步進 器、KrF步進器、ArF步進器、EB曝光裝置等照射之紫外 -13- 201126754 線、電子束、雷射光線等。又，曝光量可依據使用之光源 及塗膜膜厚等適當設定，例如，自高壓水銀燈照射之紫外 線時，塗膜之膜厚爲 0.05〜50 μιη時可成爲 100〜 20,000J/m2 左右。 曝光後，通常對曝光後之塗膜進行加熱處理（以下亦 稱該加熱處理爲「PEB」）。藉由進行PEB可使因曝光產 生之酸更有效率地作用。 PEB之條件隨著塗膜形成用之感光性組成物之成分或 固體成分濃度、及塗膜膜厚等而異，但通常在50〜180°C ，較好在60〜15(TC進行1〜60分鐘左右。 隨後，可藉由顯像形成圖型。例如，正型感光性組成 物時係使曝光部、而負型感光性組成物時係使未曝光部分 利用鹼性顯像液等顯像、溶解、去除，藉此形成所需圖型 顯像方法列舉爲淋液顯像法、噴佈顯像法 '浸漬顯像 法、槳攪顯像法等。顯像條件通常係在20〜40°C進行0.5 φ 〜1 0分鐘左右。 又，作爲鹼性顯像液列舉爲例如使氫氧化鈉、氫氧化 鉀、氨水、氫氧化四甲基銨、膽鹼等鹼性化合物以成爲1 〜1 0質量％濃度之方式溶解於水中而成之鹼性水溶液。又 ，鹼性水溶液中亦可適當調配例如甲醇、乙醇等水溶性有 機溶劑及界面活性劑等。又，以鹼性顯像液顯像後，通常 以水洗淨並乾燥。 又，顯像後亦可進行加熱處理。藉由該加熱處理’可 -14- 201126754 在所得圖型成爲電流阻止層時充分展現作爲電流阻止層之 特性，例如絕緣性等。 該硬化條件並無特別限制，通常以5 0〜6 0 0 °C之溫度 ’更好爲1分鐘〜10小時左右。又，加熱處理通常係在氮 氣中或大氣下進行。 又’亦可進行多階段加熱。藉由多階段加熱，可抑制 顯像後之圖型中所含之溶劑等突發性揮發，可使顯像後之 圖型中，感光性組成物中之成分之交聯反應等反應良好地 進行。據此，以加熱處理獲得之電流阻止層可防止電流阻 止層形成後於形成所形成之其他層之際所進行之熱處理等 之製程造成損傷。 至於多階段加熱方法列舉爲例如以二階段加熱時，第 一階段以100〜25 0°C之溫度加熱5分鐘〜2小時左右，第 二階段以250〜500 °C之溫度加熱10分鐘〜10小時左右。 本發明係使用如上述獲得之圖型作爲電流阻止層。據 此，以微影法形成自感光性組成物所得之圖型，以該圖型 作爲電流阻止層，藉此不經過上述製程所具有問題之蝕刻 等製程，可在各種位置或層上形成各種形狀之電流阻止層 〇 尤其，若形成如第二實施形態之電流阻止層，則可減 少電流阻止層形成後形成之其他層，例如電流擴散層等之 其他層之形成。因此例如以氣相嘉晶成長法、液相晶晶成 長法、氫化氣相成長法、有機金屬氣相成長法（MOCVD法 )、分子束磊晶法（MBE法）、有機金屬分子線磊晶法 -15- 201126754 (MOMBE法）及濺鍍法等製程形成其他層之際，可防止絕 緣性降低等之對既已形成之電流阻止層之不良影響（製程 損傷）。 另外，若使用含有聚矽氧烷（A)與感光性酸產生劑（B) 之感光性組成物形成如第三實施形態之電流阻止層，則於 LED或半導體雷射等之以無機成分作爲主成分之半導體發 光元件，可與鄰接於電流阻止層之其他層之元素成分近似 。據此，利用第三實施形態獲得之電流阻止層成爲與鄰接 於該電流阻止層之其他層之密著性優異者。 再者，依據第三實施形態，由於可形成透明塗膜，故 可消除曝光時成爲問題之焦點深度.之問題。因此，可形成 階差之半導體層等之焦點深度不規則之塗膜，且使該塗膜 曝光形成圖型時，可比其他感光性組成物更正確地形成目 的形狀。 [3]感光性組成物 本發明之半導體發光元件之製造方法所用之感光性組 成物（以下亦簡稱爲「感光性組成物」）只要是可藉微影法 形成圖型者即無特別限制。 該感光性組成物可爲負型感光性組成物（以下亦簡稱 爲「負型」），亦可爲正型感光性組成物（以下亦簡稱爲「 正型」）。所謂負型爲由感光性組成物獲得之塗膜中，經 輻射線照射部分作爲顯像後圖型而殘留之感光性組成物。 另一方面，所謂正型爲由感光性組成物獲得之塗膜中，輻 -16- 201126754 射線未照射部份作爲顯像後圖型而殘留之感光性組成物。 本發明之利用微影法自感光性組成物獲得之圖型，由 於作爲電流阻止層殘留於半導體發光元件中，故要求圖型 之耐光性與耐熱性等之對光與熱之安定性。據此，以獲得 對光及熱之安定性優異之圖型的負型較佳。 該感光性組成物通常包含聚合物。該聚合物可爲有機 系聚合物，亦可爲無機系聚合物。此處，所謂有機系聚合 物意指含有以碳作爲主成分之骨架（例如，由C、C與0及 C與N等所構成之骨架）之聚合物，無機系聚合物意指以 碳以外之元素作爲主成分之骨架（例如，由Si、Si與Ο、 Ti與0及Si與C等所構成之骨架）之聚合物。 亦即，本發明之感光性組成物舉例有含有以有機系聚 合物作爲主成分之有機系感光性組成物（以下亦簡稱爲「 有機系」）與含有以無機系聚合物作爲主成分之無機系感 光性組成物（以下亦簡稱爲「無機系」）。 又，本發明之感光性組成物中，就與半導體層等之其 他層之親和性或密著性之觀點而言較好爲無機系。又，如 上述，較好爲獲得對光及熱之安定性優異之圖型的無機系 。尤其’ LED及半導體雷射等之以無機成分作爲主成分之 半導體發光元件中，由於與鄰接於電流阻止層之其他層之 元素成分近似，故利用無機系可形成與鄰接於電流阻止層 之其他層之密著性優異之電流阻止層。再者，由於可形成 透明塗膜’故可消除曝光時成爲問題之焦點深度的問題而 較佳。 -17- 201126754 又，有機系時，以感光性組成物中所含之聚合物之總 量設爲1〇〇質量％時，有機系聚合物爲含有50質量％以上 (亦可爲100質量％)者。亦即，不含無機系聚合物，或即 使含有亦未達50質量％者。同樣地，無機系時，以感光性 組成物中所含之聚合物之總量設爲1 00質量％時，無機系 聚合物爲含有50質量％以上（亦可爲1〇〇質量％)者。亦即 ，不含有機系聚合物，或即使含有亦未達50質量％者。 因此，作爲本發明之感光性組成物，可列舉爲正型且 爲有機系之感光性組成物（以下亦稱爲「正-有機系」）、正 型且爲無機系之感光性組成物（以下亦稱爲「正-無機系」） 、負型且爲有機系之感光性組成物（以下亦稱爲「負-有機 系」）、負型且爲無機系之感光性組成物（以下亦稱爲「負-無機系」）之四種類。該等中，基於上述理由以負-無機系 較佳。 正-有機系可使用例如特開2009-133924號公報 '特開 200 1 -28 1 8 62號公報、特開平1 1 - 1 06606號公報、特開 2008-192774號公報、特開 2004-309776號公報及特開 20〇4- 1 25 8 1 5號公報中所述之組成物。 更具體而言’列舉爲含有利用酸之作用而變化鹼可溶 性之鹼難溶性有機系聚合物與感光性酸產生劑（例如後述 之感光性酸產生劑（B)，以下同）之組成物；含有鹼可溶性 有機聚合物與萘醌二疊氮化合物之組成物、利用萘醌二疊 氮之鹼溶解性抑制效果之組成物等。 正-無機系可使用例如特開2007-279073號公報及 201126754 2007-182555號公報等所述之組成物。 更具體而言，列舉爲含有利用酸之作用而變化鹼可溶 性之鹼難溶性無機系聚合物與感光性酸產生劑之組成物； 含有鹼可溶性無機聚合物與萘醌二疊氮化合物之組成物、 利用萘醌二疊氮之鹼溶解性抑制效果之組成物等。 負-有機系可使用例如特開2007-293 3 06號公報、特開 2003 -2 1 5 8 02號公報、特開 2004- 1 0660號公報、特開 $ 2003-258422號公報、特開 2004-10660號公報、特開 2004-171026號公報等所述之組成物。 更具體而言，舉例有含有鹼可溶性有機系聚合物及具 有自由基聚合性不飽和鍵基（例如，甲基丙烯醯基或乙烯 基等）之化合物及敏輻射線性自由基產生劑之組成物；含 有鹼可溶性之有機系聚合物與利用酸之作用進行交聯反應 之化合物（例如，具有環氧基之化合物或三聚氰胺系化合 物等）及感光性酸產生劑之組成物；含有具有鹼可溶性且 φ 爲自由基聚合性不飽和鍵基（例如甲基丙烯醯基或乙烯基 等）之有機系聚合物與敏輻射線性自由基產生劑之組成物 ;含有鹼可溶性且利用酸之作用進行交聯反應之基（例如 ’環氧基等）之有機系聚合物與感光性酸產生劑之組成物 等。 負-無機系可使用例如特開2004-212983號公報、 WO0 4/111734 號公報、WO05/036269 號公報、特開 2004-198906號公報及特開2005-266474號公報中所述之組成物 等。 19- 201126754 更具體而言’舉例有含有鹼可溶性無機系聚合物、具 有自由基聚合性不飽和鍵基（例如，甲基丙烯醯基或乙烯 基等）之化合物與敏輻射線性自由基產生劑之組成物；含 有鹼可溶性之無機系聚合物與利用酸之作用進行交聯反應 之化合物（例如’具有環氧基之化合物或三聚氰胺系化合 物等）及感光性酸產生劑之組成物；含有具有鹼可溶性且 爲自由基聚合性不飽和鍵基（例如甲基丙烯醯基或乙烯基 等）之無機系聚合物與敏輻射線性自由基產生劑之組成物 :含有具有鹼可溶性且利用酸之作用進行交聯反應之基（ 例如’環氧基等）之無機系聚合物與感光性酸產生劑之組 成物；含有金屬醇鹽之縮合物與感光性酸產生劑之組成物 等。 至於負-無機系，該等中以含有金屬醇鹽之縮合物與 感光性酸產生劑之組成物較佳，再者，金屬醇鹽之縮合物 就與其他層之親和性及密著性之方面優異，且獲得對光與 熱安定之圖型之觀點而言更好爲聚矽氧烷。又，大多爲了 提高發光效率而有不使半導體層表面平坦而爲凹凸之情況 。該情況下，有必要在凹凸表面上形成由感光性組成物所 成之塗膜。金屬醇鹽之縮合物爲聚矽氧烷時，由於提高所 得塗膜之透明性，故就在凹凸表面上亦精密度良好地形成 目的圖型之觀點而言更好。 再者，上述所謂鹼可溶性之聚合物爲由該聚合物所成 之塗膜相對於2.38質量％之氫氧化四銨水溶液（鹼性液）之 溶解度爲1 00埃/秒以上之聚合物。同樣地，所謂鹼難溶 201126754 性之聚合物爲由該聚合物所成之塗膜相對於2.3 8質量％之 氫氧化四銨水溶液（鹼性液）之溶解度未達1 〇 〇埃/秒之聚合 物。 以下針對第六實施形態之含有聚矽氧烷（A)與感光性 酸產生劑（B)之感光性組成物加以說明。 [3-1]第六實施形態 聚矽氧烷（A)較好爲使矽烷化合物縮合獲得之聚合物 。更詳言之，較好爲以使由RaSUOR^h-a表示之矽烷化合 物（以下稱爲「化合物（al )」）及以Si(OR2)4表示之矽烷化 合物（以下稱爲「化合物（a2)」）所選出之至少一種矽院化 合物縮合獲得之聚合物。 又，化合物（al)中，R表示氫原子、氟原子、碳數i 〜5之直鏈狀或分支狀烷基、氰基、氰基烷基、或烷基羰 基氧基，R1表示一價有機基，a表示1〜3之整數。 又，化合物（a2)中，R2表示一價有機基。 化合物（al)之R1中之一價有機基列舉爲烷基、烯基、 芳基、烯丙基、縮水甘油基等。 至於化合物（al)較好爲甲基三甲氧基矽烷、甲基三乙 氧基矽烷、甲基三正丙氧基矽烷、甲基三異丙氧基矽烷、 乙基三甲氧基矽烷、乙基三乙氧基矽烷、二甲基二甲氧基 矽烷、二甲基二乙氧基矽烷、二乙基二甲氧基矽烷、二乙 基二乙氧基矽烷、乙烯基三甲氧基矽烷、苯基三甲氧基矽 烷等。 -21 - 201126754 化合物（a2)之R2中之一價有機基可直接使用化合物 (al)之R1中之一價有機基。但，化合物（a2)之R2與化合 物（al)之R1可相同亦可不同。 至於化合物（a2)列舉爲四甲氧基矽烷、四乙氧基矽烷 、四正丙氧基矽烷、四異丙氧基矽烷、四正丁氧基矽烷、 四第二丁氧基矽烷、四第三丁氧基矽烷、四苯氧基矽烷等 。該等中較好爲四甲氧基矽烷、四乙氧基矽烷。 構成聚矽氧烷（A)之水解性矽烷化合物可僅使用化合物（al) 及化合物（a2)，但亦可視需要倂用以R3x(R4〇)3.xSi-(R7)z-Si(〇R5)3-yR6y 表示之水解性矽烷化合物（以下稱爲「化合物（a3)」）。 又，化合物（a3)中，R3〜R6爲相同或不同，分別表示 一價有機基，X及y爲相同或不同，表示〇〜2之數，R7 表示氧原子、伸苯基、或以- (CH2)n -表示之基（其中，η爲 1〜6之整數），ζ表示〇或1。 化合物（a3)之R3〜R6中之一價有機基可分別直接使用 化合物（al)之R1中之一價有機基。但，化合物（a3)之r3〜 R6與化合物（a 1)之R 1可分別相同亦可不同。 化合物（a3)中，z = 0之化合物（a3)較好爲六甲氧基二矽 烷、六乙氧基二矽烷、1，1，2,2·四甲氧基- ：ι，2·二甲基二砂 烷、1，1，2,2-四乙氧基-1，2-二甲基二矽烷、mi四甲氧 基-1，2-二苯基二矽烷、1，2-二甲氧基-四甲基二砂 烷、1，2-二乙氧基-1，1，2,2-四甲基二矽烷、；!，2-二甲氧基_ 1，1，2,2-四苯基二矽烷、1，2-二乙氧基四苯基二矽 烷等。 -22- 201126754 化合物（a3)中’ z=l之化合物（a3)較好爲雙（三甲氧基 矽烷基）甲烷、雙（三乙氧矽烷基）甲烷、丨，2_雙（三甲氧基矽 烷基）乙烷、1,2-雙（三乙氧基矽烷基）乙烷、二甲氧基甲 基矽烷基）-1-(三甲氧基矽烷基）甲烷' 1_(二乙氧基甲基矽 烷基）-1-(三乙氧基矽烷基）甲烷、1-(二甲氧基甲基矽烷基 )-2-(三甲氧基矽烷基）乙烷、ι_(二乙氧基甲基矽烷基）·2_( 三乙氧基矽烷基）乙烷、雙（二甲氧基甲基矽烷基）甲烷、雙 φ (二乙氧基甲基矽烷基）甲烷、1,2-雙（二甲氧基甲基矽烷基） 乙烷、1，2-雙（二乙氧基甲基矽烷基）乙烷、丨，2_雙（三甲氧 基矽烷基）苯、1，2-雙（三乙氧基矽烷基）苯、1,3-雙（三甲氧 基矽烷基）苯、1,3-雙（三乙氧基矽烷基）苯、I，4-雙（三甲氧 基矽烷基）苯、1，4-雙（三乙氧基矽烷基）苯等。 以聚矽氧烷（A )中所含之全部構成單位之合計爲1 0 0 莫耳°/。時’源自化合物（al)之構成單位之含有比例較好爲 30〜100莫耳％，更好爲60〜100莫耳％，又更好爲7〇〜 φ 1 〇〇莫耳。/。。源自化合物（al)之構成單位之含有比例爲30 〜1 〇〇莫耳％時，與半導體層等之其他層之親和性或密著 性優異，同時可精密度良好地在凹凸表面上形成目的圖型 0 源自化合物（a2)之構成單位之含有比例以源自化合物 (al)之構造單位之含有比例作爲1〇〇質量份時，較好爲〇 〜70質量份，更好爲0〜40質量份。源自化合物（a2)之構 成單位之含有比例爲0〜70質量份時，就與半導體層等其 他層之親和性或密著性優異，同時可在凹凸表面上精密度 -23- 201126754 良好地形成目的圖型之觀點而言爲較佳。 又，源自化合物（a3)之構成單位之含有比例以源自化 合物（a 1)之構造單位之含有比例作爲1〇〇質量份時，較好 爲50質量份以下，更好爲〇〜40質量份，又更好爲0〜30 質量份。源自化合物U3)之構成單位之含有比例爲50質量 份以下時，圖型形成中，不會因含有源自聚矽氧烷中之化 合物（al)及化合物（a2)之各化合物之構成單位而妨礙效果 ，且可更有效地獲得包含源自化合物（a3)之構成單位之效 果。 聚矽氧烷（A)之利用尺寸排除層析（SEC)法之聚苯乙烯 換算重量平均分子量較好爲 1000〜1 00000，更好爲 1000 〜10000。該重量平均分子量爲1000〜100000時，可抑制 硬化前不期望之凝膠化，且同時可並存優異之塗佈性與高 的儲存安定性。 又，爲了調整感光性組成物之硬化特性，亦可添加具 有交聯基之倍半矽氧烷類，例如八[(1，2-乙氧基-4-環己基） 二甲基矽氧基]倍半矽氧烷、八[(3-縮水甘油氧基丙基）二 甲基矽氧基]倍半矽氧烷等。 又，進行縮合反應後，較好進行例如甲醇、乙醇等低 級醇類等之反應副產物的去除處理。據此，通常，由於可 使用之後述溶劑之純度高，故可獲得更優異之塗佈性，同 時亦可獲得優異之保存安定性。 聚矽氧烷（A)可由聚合物溶液單離而使用，亦可直接 使用聚合物溶液。又，作爲聚合物溶液使用時，亦可視需 -24- 201126754 要將溶劑置換成後述溶劑。 感光性酸產生劑（B)(以下亦稱爲「酸產生劑」）爲藉由 曝光產生酸之成分。藉由含有酸產生劑（B)，由酸產生劑 (B)產生之酸可促進聚矽氧烷（A)之交聯，結果進行膜之硬 化並進行機械特性優異之圖型之形成。曝光之光源列舉爲 例如可見光、紫外線、遠紫外線、X射線、電子束等帶電 粒子束等之輻射線（ArF準分子雷射（波長193nm)或KrF準 分子雷射（長248nm))等。 至於酸產生劑（B )可使用習知化合物，例如可使用特 開2008-192774號公報、特開2007-256935號公報、特開 2007- 1 78 903號公報中所述之化合物。 更具體而言，可使用鑰鹽化合物（包含噻吩鑰鹽化合 物）' 含鹵素之化合物、重氮酮化合物、楓化合物、磺酸 化合物、重氮甲烷化合物、磺醯亞胺化合物等。酸產生劑 (B)可僅使用一種，亦可倂用兩種以上。 酸產生劑（B)中，就與聚矽氧烷（A)之相溶性，或感光 性組成物之解像度或感度之觀點而言，較好爲鑰鹽化合物 ，而且更好爲噻吩鑰鹽化合物。 前述鑰鹽化合物列舉爲1-(4,7-二正丁氧基萘-1-基）四 氫噻吩鎗鹽化合物、1-(4-正丁氧基萘-1-基）四氫噻吩鐵鹽 化合物、1-(6-正丁氧基萘-2-基）四氫噻吩鑰鹽化合物、ΙΟ ,5-二甲基 -4-羥基 苯基） 四氫 噻吩鐵 鹽化合 物等噻 吩鑰鹽 化合物；雙（4-第三丁基苯基）碘鑰鹽化合物、二苯基碘鑰 鹽化合物等碘鑰鹽化合物；三苯基锍鹽化合物、4 -第三丁 -25- 201126754 基苯基二苯基锍鹽化合物、4-環己基苯基二苯基锍鹽化合 物、4-甲烷磺醯基苯基二苯基毓鹽化合物等毓鹽化合物； 鱗鹽化合物；重氮鑰鹽化合物：吡啶鑰鹽化合物等。 酸產生劑（B)之含量並無特別限制，就確保感度及解 像性之觀點而言，相對於聚矽氧烷1〇〇質量份，通常爲 0.1〜30質量份，較好爲〇.1〜20質量份，更好爲0.1〜15 質量份。在前述較佳範圍內感度及解像性優異，同時可充 分獲得對於輻射線之透明性，更容易獲得良好圖型形狀。 本發明之第六實施形態除上述成分以外亦可含有其他 成分。其他成分亦可適當地含有溶劑、酸擴散抑制劑、界 面活性劑、增感劑、酸增生劑、交聯劑、光暈防止劑、保 存安定劑、消泡劑等。 所謂溶劑爲控制第六實施形態之整體狀態（例如黏度 等），且可良好地展現聚矽氧烷（A)及酸產生劑（B)個別功能 而使用者。至於溶劑可較好地使用有機溶劑等，列舉爲例 如甲基乙基酮、環己酮等酮系有機溶劑；γ-丁內酯等酯系 溶劑；丙二醇單甲基醚乙酸酯、二乙二醇單乙基醚乙酸酯 等二醇單醚單酯類；丙二醇單甲基醚、丙二醇單乙基醚等 烷基醚類；4-甲基-2-戊醇等烷基醇類等。 所謂酸擴散控制劑爲具有控制藉由輻射線自感光性酸 產生劑產生之酸在塗膜中之不必要之擴散，且抑制非照射 區域中非所欲之化學反應之作用。前述酸擴散控制劑較好 爲不會因輻射線之照射或加熱改變鹼性之三乙胺、三辛基 胺、2-苯基咪唑、2-苯基苯并咪唑、Ν-第三丁氧基羰基- 2- -26- 201126754 苯基苯并咪唑等含氮有機化合物。 界面活性劑係爲了改善塗膜平坦化、基板外緣平坦化 、條紋等而添加。該種界面活性劑列舉爲矽氧系界面活性 劑、氟系界面活性劑、丙烯酸系界面活性劑等。更具體而 言，歹IJ 舉爲 EF TOP EF301、EF303、EF352(TORKEMU PRODUCT 公司製造）、MEGAFACE F171、F172、F173(大日本油墨化學 工業公司製造）、FLORARD FC430、FC431(住友3M公司製造 )、SURFLON S-381、S-382、SC101、SC 102、SC 103、SC 104 、SC105、SC106(旭硝子公司製造）、FTERGENT 25 0 ' 25 1、 222F、FTX-218(NEOS公司製造）等氟系界面活性劑等。 如上述’本發明之半導體發光元件係利用微影法，形 成自含有聚矽氧烷（A)及酸產生劑（B)之感光性組成物所得 之圖型，使用該圖型作爲電流阻止層。該電流阻止層利用 DD-MAS法，以29Si-NMR測定時獲得之源自Q4之訊號之 積分比率’以全積分比率設爲1 0 0 %時，爲5 0 %以下。 再者，聚矽氧烷（A)爲使含有前述化合物（al)與前述化 合物（a2)之混合物縮合而得之聚矽氧烷時，電流阻止層利 用DD-MAS法以29Si-NMR測定時獲得源自T之訊號。 又’所謂源自Q4之訊號係表示矽原子透過氧原子與 4個其他矽原子鍵結之狀態之源自矽原子之訊號，且化學 位移在-125〜- l〇5ppm之範圍之訊號（以四甲基矽烷之訊號 之29Si訊號作爲〇ppm)。 又’所自胃源自T之訊號表不源自T1之訊號、源自T2 之訊號及源自T3之訊號組合之訊號，且化學位移在-80 -27- 201126754 〜_4〇ppm之範圍之訊號（以四甲基矽烷之訊號之29Si訊號 作爲Oppm)。 所謂源自T1之訊號表示矽原子透過氧原子與—個其 他矽原子結合’且透過氧原子與兩個氫原子或碳原子鍵結 ’且源自處於與一個氫原子或碳原子鍵結之狀態之矽原子 之訊號。所謂源自T2之訊號表示矽原子透過氧原子與兩 個其他矽原子結合，且透過氧原子與一個氫原子或碳原子 鍵結’且源自處於與一個氫原子或碳原子鍵結之狀態之矽 原子之訊號。所謂源自T3之訊號表示矽原子透過氧原子 與三個其他矽原子結合，且源自處於與一個氫原子或碳原 子鍵結之狀態之矽原子之訊號。 利用DD-MAS法進行29Si-NMR之測定條件細節如下 〇 裝置：BRUKER公司製造，設備名稱「AVANCE300」 分析方法：將粉末樣品0.5g充塡於MAS滾筒中，以 DD-MAS法測定固體29Si-NMR。MAS轉數爲5kHz，重複 之等待時間爲30秒，累積次數2800次。 [實施例] 以下列舉實施例更具體說明本發明之實施形態。但， 本發明並不受該等實施例之任何限制。又，「份」及「％ 」若未特別說明則爲質量基準。 [1_]感光性組成物之製備 -28- 201126754 [實施例1至U ] 如下表1所示，藉由調配、溶解各成分，獲得實施例 1至1 1之感光性組成物。 -29- 5BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating a semiconductor light-emitting device, a photosensitive composition for a method for fabricating a semiconductor light-emitting device and a semiconductor light-emitting device. [Prior Art] Φ Field of Semiconductor Light-Emitting Element In order to make the light-emitting region of the active layer not directly under the opaque electrode on the light-emitting side, or to make the light-emitting region of the active layer not directly under the electrode on the light-emitting side, the current is locally concentrated on the active layer while relaxing In order to suppress light absorption in a semiconductor substrate, an insulating film called a current blocking layer or a current narrowing layer is provided inside the semiconductor light emitting element, and a technique for improving luminous efficiency is known (Patent Documents 1 to 8 include a current blocking layer, Depending on the function of the semiconductor light-emitting element, it is necessary to form a shape covering various positions or layers, for example, over the current diffusion layer, in various shapes of φ. In the past, the current blocking layer can be repeatedly processed by CVD-TEOS, etching, or the like. [Previous Technical Literature] [Patent Literature] [Patent Document 1] JP-A-2005-294870, JP-A-2005-294870, JP-A-2005-294870, JP-A-2005-294870, JP-A-2005-294870, JP-A-2005-294870 [Patent Document 5] JP-A-2004- 047, 196, JP-A-2003-243, 703 SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] However, in the past, the formation process of the current blocking layer has been subjected to a plurality of processes, which causes problems such as reduced workability, reduced yield, and increased cost. This process has such a problem that defects occur in the semiconductor layer formed, and the crystal quality is lowered due to a decrease in crystal quality, etc. The present invention has been made to solve the above problems, and the object thereof is to provide semiconductor light emission. A photosensitive composition used in a method for producing a device, a semiconductor light-emitting device, and a method for producing the semiconductor light-emitting device, the method comprising a method of manufacturing a semiconductor light-emitting device having a current blocking layer, Current blocking layer is easily formed in various shapes or positions of the various layers. [Means for solving the Problem] The present invention include, for example, the state of the sample. &lt;1&gt; A method of producing a semiconductor light-emitting device, which is a method for producing a semiconductor light-emitting device having a current blocking layer, characterized in that a pattern obtained from a photosensitive composition is formed by a lithography method, and the pattern is used as the pattern A current blocking layer (hereinafter also referred to as "first embodiment"). -6 - 201126754 &lt;2&gt; as described above The method of manufacturing a semiconductor light-emitting device according to the above aspect, wherein the semiconductor light-emitting device has a semiconductor layer, a current diffusion layer formed on the semiconductor layer, an electrode formed on the current diffusion layer, and not adjacent to the electrode A current blocking layer (hereinafter also referred to as "second embodiment") located under the electrode and covered by the current diffusion layer. &lt;3&gt; as described above &lt;1&gt; or The method for producing a semiconductor light-emitting device according to the above aspect, wherein the photosensitive composition contains polysiloxane (A) and a photosensitive acid generator (B) (hereinafter also referred to as "third embodiment") ). &lt;4&gt; A semiconductor light emitting element characterized by being as described above &lt;1;&gt; to The method for producing a semiconductor light-emitting device according to any one of the items of the present invention, which is also referred to as "the fourth embodiment". &lt;5&gt; - a photosensitive composition characterized by being used as described above or The method of manufacturing a semiconductor light-emitting device according to the above item (hereinafter also referred to as "the fifth embodiment"). &lt;6&gt; as described above The photosensitive composition according to the item <5>, which comprises a polyoxyxanthene (A) and a photosensitive acid generator (B) (hereinafter also referred to as "sixth embodiment"). &lt;7&gt;-Semiconductor light-emitting element 'characterized by having a current blocking layer', the current blocking layer is obtained by the DD-MAS method, and the integral ratio of the signal derived from Q 4 obtained by 2 9 S i - NMR is When the total integration ratio is set to 1 〇〇%, it is 50% or less. &lt;8 &gt; as described The semiconductor light-emitting device according to the item <7>, which has a current blocking layer which exhibits a signal derived from τ when measured by nsi_NMR by the DD-MAS method. [Effect of the Invention] According to the first embodiment, in the method of manufacturing a semiconductor light-emitting device having a current blocking layer, various shapes of current can be formed at various positions or layers without performing a process such as etching having the above-described process. Blocking the layer eliminates this problem in the process. According to the second embodiment, since the formation of the current blocking layer can be reduced to form another layer, it is possible to prevent the process of causing the current blocking layer from being damaged (insulation property is lowered) when the other layer is formed. According to the third embodiment, in the semiconductor light-emitting device having an inorganic component as a main component such as an LED or a semiconductor laser, since it is close to an elemental component of another layer adjacent to the current blocking layer, it can be formed adjacent to the current blocking layer. The current blocking layer of the other layers is excellent in adhesion. According to this, the problem in the manufacturing process in the method of manufacturing the semiconductor light emitting element can be eliminated. Further, since the desired shape can be accurately formed in the semiconductor layer of the step difference, the process margin can be broadened. According to the fourth embodiment, the semiconductor light-emitting device obtained by the method for manufacturing a semiconductor light-emitting device which eliminates the problem in the process is a semiconductor light-emitting device having excellent luminous efficiency and the like. According to the fifth embodiment, a method of manufacturing a semiconductor light emitting element which eliminates the problem of the process can be effectively used. According to the sixth embodiment, since the current blocking layer excellent in adhesion to the other layers adjacent to the current blocking layer can be formed, the method of manufacturing the semiconductor light emitting element which eliminates the problem in the process can be more effectively used. -8 - 201126754 [Embodiment] [1] Semiconductor light-emitting device The semiconductor light-emitting device of the present invention is the fourth embodiment, and is obtained by "[2] Manufacturing method of semiconductor light-emitting device" which will be described later. The method of manufacturing a semiconductor light-emitting device is based on the configuration or shape of the semiconductor light-emitting device. However, the semiconductor light-emitting device of the present invention has a current blocking layer formed by a method of forming [2-1] a current blocking layer, which will be described later. There are no special restrictions. The configuration or shape of the current blocking layer of the semiconductor light emitting element is exemplified by a current blocking type structure and a current narrow type structure. Further, the electrode configuration or shape of the semiconductor light-emitting device is generally a type in which the upper electrode and the lower electrode are opposed to each other, and the upper electrode and the lower electrode are in the same groove shape. Further, the configuration or shape of the semiconductor layer of the semiconductor light-emitting device is exemplified by, for example, a double heterojunction type and a quantum well junction type. Specific examples of the configuration and shape of the semiconductor light-emitting device are disclosed in, for example, JP-A-2009-170655, JP-A-2007-173530, JP-A-2007-157778, JP-A-2005-294870, JP-A-2004-296979 Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Unexamined Patent Publication No. Publication No. JP-A No. 2000-261. The configuration or shape described in Japanese Laid-Open Patent Publication No. Hei 10-294531, No. Hei 09-312442, No. Hei. Further, the term "current blocking layer" as used in the present invention means that the light-emitting region of the active layer is not positioned directly under the opaque electrode on the light-emitting side, and is not a narrow current blocking layer but includes an active layer. The light-emitting region is not located directly under the electrode on the light-emitting side, but can relax the layer of the current confinement layer used to suppress the local current concentration of the active layer while suppressing light absorption in the semiconductor substrate. A representative example of the semiconductor light-emitting device of the present invention is a cross-sectional view of the current-blocking type semiconductor light-emitting device shown in Fig. 1. Further, the semiconductor light-emitting device shown in Fig. 1 is also an example of the fourth embodiment in the second embodiment. The semiconductor light-emitting device of Fig. 1 is provided with a buffer layer 101, a semiconductor layer 110, a current diffusion layer 120, and an upper electrode 131 in this order on the sapphire substrate 100. Next, the current blocking layer 140 is provided so as not to be adjacent to the upper electrode 131 and to be positioned below the upper electrode and to be covered by the current diffusion layer 120. The semiconductor layer 11 is a double heterojunction type, and is provided on the buffer layer 101 in the order of the n-type cladding layer 111, the active layer 112, and the p-type cladding layer 113. The lower electrode 132 is provided on one of the n-type cladding layers and disposed in the same direction as the upper electrode 131. Further, in the semiconductor light-emitting device of Fig. 1, since the upper surface of the upper electrode i 3 is a light-emitting surface, the current-diffusion layer is a transparent electrode such as tin-doped indium oxide. The buffer layer 110, the semiconductor layer 110, the current diffusion layer 120, the upper electrode 133, and the lower electrode can be by conventional methods, such as vapor phase epitaxial growth method, -10-201126754 liquid phase epitaxial growth method After forming a film by a hydrogenation vapor phase growth method, an organometallic vapor phase growth method (MOCVD method), a molecular beam epitaxy method (MBE method), an organometallic molecular line epitaxy method (MOMBE method), and a sputtering method, if necessary, The photoresist is used as a mask by etching or boring. Further, the current blocking layer can be formed by a "method of forming a [2 - 1 ] current blocking layer" which will be described later. In addition to the above various layers, a reflective layer or the like for amplifying light may be formed depending on the configuration or shape of the semiconductor light emitting element. Further, a substrate other than the sapphire φ substrate or the like can be used. In particular, the upper layer of the current resistance mostly has various shapes. For example, it may have a quadrangular prism such as a cube, a rectangular parallelepiped, or the like, and a shape such as a cylinder or a cone. The present invention is a pattern obtained by a photosensitive composition by a lithography method, and since the pattern is used as a current blocking layer, the current blocking layer can be processed into various shapes. U] Method of manufacturing a semiconductor light-emitting device % The method for manufacturing a semiconductor light-emitting device according to the present invention is based on the configuration and shape of the semiconductor light-emitting device. However, the method of forming a [2-1] current blocking layer will be described later. There is no particular limitation on the formation of the current blocking layer in accordance with the method described in the "Method for forming a current blocking layer of ^ [ 2 · 1 ]". In particular, the method for producing a semiconductor light-emitting device of the present invention is the same as the method of manufacturing described in the above-mentioned "[1] semiconductor light-emitting device" and the "method for forming a current blocking layer of [2 - 1 ]" described later. In addition to the formation method described above, various embodiments may be used depending on the configuration or shape of the semiconductor light-emitting element. -11 - 201126754 A representative example of the method for producing a semiconductor light-emitting device of the present invention is shown in the method for manufacturing a current-blocking type semiconductor light-emitting device (nitride semiconductor light-emitting device) of Fig. 2 . Further, the method of manufacturing the semiconductor light-emitting device shown in Fig. 2 is also an example of the second embodiment. First, as shown in FIG. 2(a), an n-type cladding layer 211 such as a buffer layer 201 or n-type GaN, an active layer 212 such as InGaN/GaN, and ρ are formed on the sapphire substrate 200 by an organometallic vapor phase growth method. The semiconductor layer such as the p-type cladding layer 213 such as GaN is sequentially grown. Next, in order to expose the surface of the n-type cladding layer 211 forming the lower electrode 232, a photoresist mask (not shown) is formed on the substrate of FIG. 2(a), and a cross-sectional view is shown in FIG. 2(b). As shown, the surface of the n-type cladding layer 211 is exposed by removing a portion of the semiconductor layer 210 where a portion of the photoresist mask (not shown) is not formed. Subsequently, the photoresist mask (not shown) is removed. Then, as shown in FIG. 2(c), a current blocking layer is formed on the p-type cladding layer 213 by the method of forming the current blocking layer described in the following [[2-1] Method of Forming Current Barrier Layer]. 240. Subsequently, a current diffusion layer composed of tin-doped indium oxide is formed in such a manner as to cover the current blocking layer 240. Next, in order to form the upper electrode 231 on the current diffusion layer 220, the n-type cladding layer 211 is formed. The lower electrode 232 is formed thereon, and after forming the photoresist pattern, the upper electrode 231 and the lower electrode 232 are formed by vacuum deposition or the like, whereby a current-blocking type semiconductor light-emitting element can be manufactured (FIG. 2(d)). Further, the method of manufacturing the current-blocking type semiconductor light-emitting device of FIG. 2 is manufactured in the order of (a), (b), (c), and (d) described above, but is not limited to the order of 201126754, and may be appropriately changed. Its order. Further, a protective film for protecting the semiconductor layer may be formed. [2 -1] Method of forming current blocking layer The method of forming a current blocking layer in the method for producing a semiconductor light emitting device of the present invention is a pattern obtained by forming a self-photosensitive composition by a lithography method. Block the layer. Here, the lithography method is a general term for a method of forming a pattern by developing a pattern on a coating film obtained from a photosensitive composition, optionally passing through a mask, selectively irradiating radiation (wavelength is not limited), and then developing a pattern by development. . First, a photosensitive composition is applied onto a substrate, and when a photosensitive composition containing a volatile component such as a solvent is contained, the solvent is volatilized to form a coating film. Further, the details of the photosensitive composition are described in "[3] Photosensitive Composition" which will be described later. The substrate is a layer in which a current blocking layer is formed on a layer such as a current diffusion layer of a semiconductor layer, and is appropriately selected depending on the structure or shape of the semiconductor light-emitting element. Further, as a method of applying the photosensitive composition, various coating methods such as a dipping method, a spray method, a bar coating method, a roll coating method, and a spin coating method can be employed. The thickness of the coating film can be appropriately controlled by adjusting the coating means, the solid content concentration and viscosity of the resin composition solution, and the like. For example, in the spin coating method, the thickness of the coating film can be controlled by changing the number of revolutions. Next, the resulting coating film is exposed through a mask having a desired pattern as needed. The radiation used for exposure is exemplified by, for example, a low pressure mercury lamp, a high pressure mercury lamp, a metal halide lamp, a g line stepper, an h line stepper, an i line stepper, a KrF stepper, an ArF stepper, an EB exposure device. Irradiation of UV-13- 201126754 lines, electron beams, laser light, etc. Further, the exposure amount can be appropriately set depending on the light source to be used and the film thickness of the coating film, for example, when the ultraviolet ray is irradiated from the high pressure mercury lamp, the film thickness of the coating film is 0. When it is 05~50 μιη, it can be around 100~ 20,000J/m2. After the exposure, the film after the exposure is usually subjected to heat treatment (hereinafter referred to as "PEB"). The acid produced by the exposure can be more efficiently acted by performing PEB. The condition of the PEB varies depending on the composition of the photosensitive composition for forming a coating film, the solid content concentration, and the thickness of the coating film, but is usually 50 to 180 ° C, preferably 60 to 15 (TC is carried out 1 to 1). After about 60 minutes, the pattern can be formed by development. For example, when the positive photosensitive composition is used for the exposed portion, and for the negative photosensitive composition, the unexposed portion is made of an alkaline developing solution or the like. Image, dissolution, and removal, thereby forming a desired pattern development method are enumerated as a liquid immersion imaging method, a spray imaging method, an immersion imaging method, an paddle stirring method, etc. The development condition is usually 20~ 40 ° C for 0. 5 φ ~ 1 0 minutes or so. In addition, as an alkaline developing solution, for example, a basic compound such as sodium hydroxide, potassium hydroxide, aqueous ammonia, tetramethylammonium hydroxide or choline is dissolved in water so as to have a concentration of 1 to 10% by mass. It is an alkaline aqueous solution. Further, a water-soluble organic solvent such as methanol or ethanol, a surfactant, or the like may be appropriately added to the aqueous alkaline solution. Further, after development with an alkaline developing solution, it is usually washed with water and dried. Moreover, heat treatment can also be performed after development. By the heat treatment '14-201126754, when the pattern obtained becomes a current blocking layer, characteristics such as insulation properties and the like are sufficiently exhibited. The curing condition is not particularly limited, and is usually from a temperature of from 50 to 600 ° C, preferably from about 1 minute to about 10 hours. Further, the heat treatment is usually carried out in nitrogen or in the atmosphere. Also, multi-stage heating can be performed. By multi-stage heating, it is possible to suppress sudden volatilization such as a solvent contained in the pattern after development, and it is possible to react well in a cross-linking reaction of components in the photosensitive composition in the pattern after development. get on. According to this, the current blocking layer obtained by the heat treatment can prevent damage caused by the heat treatment or the like which is performed at the time of forming the other layers formed after the formation of the current blocking layer. As for the multi-stage heating method, for example, when heating in two stages, the first stage is heated at a temperature of 100 to 250 ° C for 5 minutes to 2 hours, and the second stage is heated at a temperature of 250 to 500 ° C for 10 minutes to 10 minutes. Hours or so. The present invention uses the pattern obtained as described above as the current blocking layer. According to this, the pattern obtained from the photosensitive composition is formed by the lithography method, and the pattern is used as the current blocking layer, whereby various processes can be formed at various positions or layers without performing the etching process such as the problem of the above process. The current blocking layer of the shape, in particular, if the current blocking layer of the second embodiment is formed, it is possible to reduce the formation of other layers formed after the formation of the current blocking layer, for example, other layers such as a current diffusion layer. Therefore, for example, gas phase growth method, liquid crystal growth method, hydrogenation vapor phase growth method, organometallic vapor phase growth method (MOCVD method), molecular beam epitaxy (MBE method), organometallic molecular line epitaxy When the process such as the method of the -15-201126754 (MOMBE method) and the sputtering method forms another layer, it is possible to prevent the adverse effect (process damage) on the formed current blocking layer, such as a decrease in insulation. When a photosensitive composition containing a polyoxyalkylene (A) and a photosensitive acid generator (B) is used as the current blocking layer of the third embodiment, an inorganic component such as an LED or a semiconductor laser is used. The semiconductor light-emitting element of the main component can be approximated to the elemental composition of the other layers adjacent to the current blocking layer. Accordingly, the current blocking layer obtained by the third embodiment is excellent in adhesion to other layers adjacent to the current blocking layer. Further, according to the third embodiment, since the transparent coating film can be formed, the depth of focus which becomes a problem at the time of exposure can be eliminated. The problem. Therefore, a coating film having an irregular depth of focus of a semiconductor layer or the like having a step can be formed, and when the coating film is exposed to form a pattern, the desired shape can be formed more accurately than other photosensitive compositions. [3] Photosensitive composition The photosensitive composition (hereinafter also simply referred to as "photosensitive composition") used in the method for producing a semiconductor light-emitting device of the present invention is not particularly limited as long as it can form a pattern by a lithography method. The photosensitive composition may be a negative photosensitive composition (hereinafter also referred to simply as "negative"), or may be a positive photosensitive composition (hereinafter also referred to simply as "positive"). The negative type is a photosensitive composition which is left as a pattern after development by a radiation-irradiated portion of the coating film obtained from the photosensitive composition. On the other hand, the positive type is a photosensitive composition which is left as a post-development pattern in the coating film obtained from the photosensitive composition, and the unexposed portion of the radiation of the radiation of -16-201126754. In the pattern obtained by the lithography method from the photosensitive composition of the present invention, since the current blocking layer remains in the semiconductor light-emitting device, the light and heat stability of the pattern such as light resistance and heat resistance are required. Accordingly, it is preferable to obtain a negative pattern of a pattern excellent in light and heat stability. The photosensitive composition usually contains a polymer. The polymer may be an organic polymer or an inorganic polymer. Here, the organic polymer means a polymer containing a skeleton having carbon as a main component (for example, a skeleton composed of C, C and 0, and C and N, etc.), and the inorganic polymer means The element is a polymer of a skeleton of a main component (for example, a skeleton composed of Si, Si, and yttrium, Ti and 0, and Si and C, etc.). In other words, the photosensitive composition of the present invention contains an organic photosensitive composition containing an organic polymer as a main component (hereinafter also referred to as "organic") and an inorganic material containing an inorganic polymer as a main component. A photosensitive composition (hereinafter also referred to simply as "inorganic"). Further, the photosensitive composition of the present invention is preferably an inorganic system from the viewpoint of affinity or adhesion to other layers such as a semiconductor layer. Further, as described above, it is preferred to obtain a pattern of inorganic materials excellent in light and heat stability. In particular, in a semiconductor light-emitting device having an inorganic component as a main component such as an LED or a semiconductor laser, since it is similar to an element component of another layer adjacent to the current blocking layer, it can be formed by an inorganic system and adjacent to the current blocking layer. A current blocking layer with excellent adhesion to the layer. Further, since the transparent coating film can be formed, the problem of the depth of focus which becomes a problem at the time of exposure can be eliminated. -17- 201126754 In the case of the organic system, when the total amount of the polymer contained in the photosensitive composition is 1% by mass, the organic polymer is contained in an amount of 50% by mass or more (or 100% by mass). )By. That is, the inorganic polymer is not contained, or even if it contains less than 50% by mass. In the case of the inorganic system, when the total amount of the polymer contained in the photosensitive composition is 100% by mass, the inorganic polymer is contained in an amount of 50% by mass or more (or 1% by mass). . That is, it does not contain an organic polymer, or even if it contains less than 50% by mass. Therefore, the photosensitive composition of the present invention is a positive-type, organic-based photosensitive composition (hereinafter also referred to as "positive-organic"), and a positive-type and inorganic-based photosensitive composition ( The following is also referred to as "positive-inorganic"), a negative-type organic photosensitive composition (hereinafter also referred to as "negative-organic"), and a negative-type inorganic inorganic photosensitive composition (hereinafter also referred to as It is called the "negative-inorganic system". Among these, a negative-inorganic system is preferred for the above reasons. The positive-organic system can be used, for example, in Japanese Laid-Open Patent Publication No. 2009-133924, Japanese Patent Application Publication No. JP-A No. Hei. No. Hei. No. Hei. No. Hei. The composition described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. More specifically, it is a composition which contains an alkali-insoluble organic polymer which changes alkali solubility by the action of an acid, and a photosensitive acid generator (for example, the photosensitive acid generator (B) mentioned later, same. A composition containing an alkali-soluble organic polymer and a naphthoquinone diazide compound, a composition utilizing an alkali solubility-inhibiting effect of naphthoquinone diazide, and the like. For the positive-inorganic system, for example, the compositions described in JP-A-2007-279073 and JP-A-2011-26754-A No. 2007-182555 can be used. More specifically, it is a composition containing an alkali-insoluble inorganic polymer which changes alkali solubility by an action of an acid, and a photosensitive acid generator; a composition containing an alkali-soluble inorganic polymer and a naphthoquinone diazide compound A composition which utilizes the solubility-inhibiting effect of naphthoquinone diazide. The negative-organic system can be used, for example, in Japanese Laid-Open Patent Publication No. 2007-293 3 06, Japanese Patent Laid-Open Publication No. Publication No. JP-A-2003- No. A composition described in, for example, JP-A-2004-171026. More specifically, a composition containing an alkali-soluble organic polymer and a compound having a radical polymerizable unsaturated bond group (for example, a methacrylic acid group or a vinyl group) and a radiation-sensitive linear radical generating agent are exemplified. a compound containing an alkali-soluble organic polymer and a compound which is crosslinked by an action of an acid (for example, a compound having an epoxy group or a melamine compound) and a photosensitive acid generator; containing an alkali-soluble and φ is a composition of an organic polymer of a radically polymerizable unsaturated bond group (for example, a methacrylonitrile group or a vinyl group) and a linear radiation radical generating agent; it is alkali-soluble and crosslinked by an action of an acid A composition of an organic polymer and a photosensitive acid generator of a reaction group (for example, 'epoxy group or the like). For the negative-inorganic system, for example, the composition described in JP-A-2004-212983, WO 04/111734, WO05/036269, JP-A-2004-198906, and JP-A-2005-266474 can be used. . 19- 201126754 More specifically, 'exemplified by a compound containing an alkali-soluble inorganic polymer, a radically polymerizable unsaturated bond group (for example, a methacrylonitrile group or a vinyl group), and a radiation-sensitive linear radical generator a composition comprising: an alkali-soluble inorganic polymer and a compound which undergoes a crosslinking reaction by an action of an acid (for example, a compound having an epoxy group or a melamine compound) and a photosensitive acid generator; A composition of an inorganic polymer which is alkali-soluble and which is a radically polymerizable unsaturated bond group (for example, a methacrylonitrile group or a vinyl group) and a linear radiation radical generating agent: contains an alkali-soluble and utilizes an acid A composition of an inorganic polymer and a photosensitive acid generator which are subjected to a crosslinking reaction (for example, 'epoxy group or the like); a composition containing a metal alkoxide condensate and a photosensitive acid generator; and the like. As for the negative-inorganic system, the composition of the condensate containing a metal alkoxide and the photosensitive acid generator is preferred, and the affinity and adhesion of the condensate of the metal alkoxide to other layers are preferred. It is superior in terms of aspect and is preferably a polyoxyalkylene from the viewpoint of obtaining a pattern of light and heat stability. Further, in order to improve the luminous efficiency, there is a case where the surface of the semiconductor layer is not flat and irregularities are formed. In this case, it is necessary to form a coating film made of a photosensitive composition on the uneven surface. When the condensate of the metal alkoxide is a polysiloxane, since the transparency of the obtained coating film is improved, it is more preferable from the viewpoint of forming a target pattern with excellent precision on the uneven surface. Further, the above-mentioned alkali-soluble polymer is a coating film formed from the polymer with respect to 2. A 38% by mass aqueous solution of tetraammonium hydroxide (alkaline solution) having a solubility of 100 Å/sec or more. Similarly, the so-called alkali insoluble 201126754 polymer is a coating film formed by the polymer relative to 2. 3 8 mass% of the tetraammonium hydroxide aqueous solution (alkaline solution) has a solubility of less than 1 〇 / / sec of the polymer. The photosensitive composition containing the polyoxyalkylene (A) and the photosensitive acid generator (B) of the sixth embodiment will be described below. [3-1] Sixth embodiment The polyoxyalkylene (A) is preferably a polymer obtained by condensing a decane compound. More specifically, it is preferably a decane compound represented by RaSUOR^ha (hereinafter referred to as "compound (al)") and a decane compound represented by Si(OR2)4 (hereinafter referred to as "compound (a2)" a polymer obtained by condensation of at least one brothel compound selected. Further, in the compound (al), R represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group having a carbon number of i to 5, a cyano group, a cyanoalkyl group or an alkylcarbonyloxy group, and R1 represents a monovalent value. The organic group, a represents an integer of 1 to 3. Further, in the compound (a2), R2 represents a monovalent organic group. The monovalent organic group in R1 of the compound (al) is exemplified by an alkyl group, an alkenyl group, an aryl group, an allyl group, a glycidyl group or the like. The compound (al) is preferably methyltrimethoxydecane, methyltriethoxydecane, methyltri-n-propoxydecane, methyltriisopropoxydecane, ethyltrimethoxydecane or ethyl. Triethoxy decane, dimethyl dimethoxy decane, dimethyl diethoxy decane, diethyl dimethoxy decane, diethyl diethoxy decane, vinyl trimethoxy decane, benzene Trimethoxy decane and the like. -21 - 201126754 The one-valent organic group in R2 of the compound (a2) can be directly used as the one-valent organic group in the R1 of the compound (al). However, R2 of the compound (a2) and R1 of the compound (al) may be the same or different. The compound (a2) is exemplified by tetramethoxy decane, tetraethoxy decane, tetra-n-propoxy decane, tetraisopropoxy decane, tetra-n-butoxy decane, tetra-butoxy decane, and tetrad. Tributoxydecane, tetraphenoxydecane, and the like. Among these, tetramethoxy decane and tetraethoxy decane are preferred. The hydrolyzable decane compound constituting the polyoxyalkylene (A) may be used only for the compound (al) and the compound (a2), but may be used as R3x(R4〇)3 as needed. xSi-(R7)z-Si(〇R5)3-yR6y represents a hydrolyzable decane compound (hereinafter referred to as "compound (a3)"). Further, in the compound (a3), R3 to R6 are the same or different and each represents a monovalent organic group, and X and y are the same or different and each represents a number of 〇~2, and R7 represents an oxygen atom, a phenyl group, or a (CH2)n - represents the base (where η is an integer from 1 to 6), and ζ represents 〇 or 1. The one-valent organic group in R3 to R6 of the compound (a3) can be directly used as the one-valent organic group in R1 of the compound (al). However, R3 to R6 of the compound (a3) and R1 of the compound (a1) may be the same or different. In the compound (a3), the compound (a3) wherein z = 0 is preferably hexamethoxydioxane, hexaethoxydioxane, 1,1,2,2·tetramethoxy-: ι, 2·dimethyl Dioxanes, 1,1,2,2-tetraethoxy-1,2-dimethyldioxane, mi tetramethoxy-1,2-diphenyldioxane, 1,2-dimethyl Oxy-tetramethyldisane, 1,2-diethoxy-1,1,2,2-tetramethyldioxane, ;!,2-dimethoxy _ 1,1,2,2 - tetraphenyldioxane, 1,2-diethoxytetraphenyldioxane, and the like. -22- 201126754 The compound (a3) of 'z=l in the compound (a3) is preferably bis(trimethoxydecyl)methane, bis(triethoxydecylalkyl)methane, anthracene, 2_bis(trimethoxy).矽alkyl)ethane, 1,2-bis(triethoxydecyl)ethane, dimethoxymethyl decyl)-1-(trimethoxydecyl)methane '1_(diethoxymethyl) Base alkyl)-1-(triethoxydecyl)methane, 1-(dimethoxymethyldecyl)-2-(trimethoxydecyl)ethane, iota (diethoxymethyl)矽alkyl)·2_(triethoxydecyl)ethane, bis(dimethoxymethyldecyl)methane, double φ (diethoxymethyl fluorenyl) methane, 1,2-double (two Methoxymethyl decyl) ethane, 1,2-bis(diethoxymethyl decyl)ethane, hydrazine, 2-bis(trimethoxydecyl)benzene, 1,2-bis (three Ethoxyalkyl) benzene, 1,3-bis(trimethoxydecyl)benzene, 1,3-bis(triethoxydecyl)benzene, I,4-bis(trimethoxydecyl)benzene , 1,4-bis(triethoxydecyl)benzene, and the like. The total of all the constituent units contained in the polyoxyalkylene (A) is 10.0 mol%. The content ratio of the constituent unit derived from the compound (al) is preferably from 30 to 100 mol%, more preferably from 60 to 100 mol%, still more preferably from 7 〇 to φ 1 〇〇 mol. /. . When the content ratio of the constituent unit derived from the compound (al) is 30 to 1% by mole, it is excellent in affinity or adhesion to other layers such as a semiconductor layer, and can be formed on the uneven surface with high precision. When the content ratio of the constituent unit derived from the compound (a2) is from the content ratio of the structural unit derived from the compound (al) as 1 part by mass, it is preferably from 〇 to 70 parts by mass, more preferably 0. ~40 parts by mass. When the content ratio of the constituent unit derived from the compound (a2) is from 0 to 70 parts by mass, it is excellent in affinity or adhesion to other layers such as a semiconductor layer, and can be excellent in the surface of the uneven surface -23-201126754. It is preferable from the viewpoint of forming a target pattern. In addition, when the content ratio of the constituent unit derived from the compound (a3) is 1 part by mass based on the content of the structural unit derived from the compound (a1), it is preferably 50 parts by mass or less, more preferably 〇~40. The mass fraction is preferably from 0 to 30 parts by mass. When the content ratio of the constituent unit derived from the compound U3) is 50 parts by mass or less, the constituent unit of the compound containing the compound (al) derived from the polysiloxane and the compound (a2) is not formed in the pattern formation. This hinders the effect and can more effectively obtain the effect of including the constituent unit derived from the compound (a3). The polystyrene (A) is a polystyrene by size exclusion chromatography (SEC) method. The weight average molecular weight is preferably from 1,000 to 10,000, more preferably from 1,000 to 10,000. When the weight average molecular weight is from 1,000 to 100,000, undesired gelation before curing can be suppressed, and at the same time, excellent coatability and high storage stability can be coexisted. Further, in order to adjust the hardening characteristics of the photosensitive composition, a sesquiterpene oxide having a crosslinking group such as octa[(1,2-ethoxy-4-cyclohexyl)dimethylammonium may be added. And sesquiterpene oxide, octa[(3-glycidoxypropyl) dimethyl methoxy] sesquiterpene oxide, and the like. Further, after the condensation reaction, it is preferred to carry out the removal treatment of reaction by-products such as a lower alcohol such as methanol or ethanol. According to this, in general, since the purity of the solvent to be described later is high, more excellent coatability can be obtained, and excellent storage stability can be obtained at the same time. The polyoxyalkylene (A) can be used by being isolated from the polymer solution, and the polymer solution can also be used as it is. Further, when it is used as a polymer solution, it is also necessary to replace the solvent with a solvent described later in the case of -24-201126754. The photosensitive acid generator (B) (hereinafter also referred to as "acid generator") is a component which generates an acid by exposure. By the acid generating agent (B), the acid generated by the acid generator (B) promotes crosslinking of the polyoxyalkylene (A), and as a result, the film is hardened and a pattern having excellent mechanical properties is formed. The light source for exposure is exemplified by radiation such as visible light, ultraviolet light, far ultraviolet ray, X-ray, electron beam or the like, such as a charged particle beam (ArF excimer laser (wavelength 193 nm) or KrF quasi-molecular laser (length 248 nm)). As the acid generator (B), a conventional compound can be used. For example, a compound described in JP-A-2008-192774, JP-A-2007-256935, and JP-A-2007-17881 can be used. More specifically, a key salt compound (including a thiophene key compound) 'halogen-containing compound, a diazoketone compound, a maple compound, a sulfonic acid compound, a diazomethane compound, a sulfonimide compound, or the like can be used. The acid generator (B) may be used alone or in combination of two or more. The acid generator (B) is preferably a key salt compound, and more preferably a thiophene key compound, from the viewpoint of compatibility with the polyoxyalkylene (A) or the resolution or sensitivity of the photosensitive composition. . The above key salt compound is exemplified by 1-(4,7-di-n-butoxynaphthalen-1-yl)tetrahydrothiophene gun salt compound, 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophene iron. Salt compound, 1-(6-n-butoxynaphthalen-2-yl)tetrahydrothiophene key compound, hydrazine, 5-dimethyl-4-hydroxyphenyl) tetrahydrothiophene iron salt compound, etc. ; bis(4-tert-butylphenyl) iodine salt compound, diphenyl sulfonium salt compound and the like iodine salt compound; triphenyl sulfonium salt compound, 4 - third butyl - 25, 201126754 phenyl a phenyl sulfonium salt compound, a 4-cyclohexyl phenyl diphenyl sulfonium salt compound, a sulfonium salt compound such as a 4-methanesulfonyl phenyl diphenyl sulfonium salt compound; a scaly salt compound; a diazo salt salt compound: a pyridine key Salt compounds, etc. The content of the acid generator (B) is not particularly limited, and from the viewpoint of ensuring sensitivity and resolution, it is usually 0% by mass based on 1 part by mass of the polyoxysiloxane. 1 to 30 parts by mass, preferably 〇. 1 to 20 parts by mass, more preferably 0. 1 to 15 parts by mass. In the above preferred range, the sensitivity and the resolution are excellent, and at the same time, the transparency to the radiation can be sufficiently obtained, and a good pattern shape can be more easily obtained. The sixth embodiment of the present invention may contain other components in addition to the above components. Other components may suitably contain a solvent, an acid diffusion inhibitor, a surfactant, a sensitizer, an acid proliferation agent, a crosslinking agent, a halo preventing agent, a retention stabilizer, an antifoaming agent, and the like. The solvent is a user who controls the overall state (e.g., viscosity, etc.) of the sixth embodiment and exhibits the individual functions of the polyoxane (A) and the acid generator (B). As the solvent, an organic solvent or the like can be preferably used, and examples thereof include a ketone organic solvent such as methyl ethyl ketone or cyclohexanone; an ester solvent such as γ-butyrolactone; propylene glycol monomethyl ether acetate; a glycol monoether monoester such as diol monoethyl ether acetate; an alkyl ether such as propylene glycol monomethyl ether or propylene glycol monoethyl ether; an alkyl alcohol such as 4-methyl-2-pentanol; . The acid diffusion controlling agent has an effect of controlling unnecessary diffusion of an acid generated from a photosensitive acid generator by radiation, and suppressing an undesired chemical reaction in a non-irradiated region. The acid diffusion controlling agent is preferably a triethylamine, a trioctylamine, a 2-phenylimidazole, a 2-phenylbenzimidazole or a ruthenium-tertiary butoxide which does not change under irradiation or irradiation with radiation. Carbocarbonyl- 2--26- 201126754 Nitrogen-containing organic compounds such as phenyl benzimidazole. The surfactant is added for the purpose of improving the flatness of the coating film, flattening the outer edge of the substrate, streaks, and the like. Such a surfactant is exemplified by a ruthenium-based surfactant, a fluorine-based surfactant, an acrylic surfactant, and the like. More specifically, 歹IJ is EF TOP EF301, EF303, EF352 (manufactured by TORKEMU PRODUCT), MEGAFACE F171, F172, F173 (manufactured by Dainippon Ink and Chemicals, Inc.), FLORARD FC430, FC431 (manufactured by Sumitomo 3M), Fluorine interface such as SURFLON S-381, S-382, SC101, SC 102, SC 103, SC 104, SC105, SC106 (made by Asahi Glass Co., Ltd.), FTERGENT 25 0 '25 1 , 222F, FTX-218 (manufactured by NEOS) Active agent, etc. As described above, the semiconductor light-emitting device of the present invention is formed by a lithography method from a photosensitive composition containing a polysiloxane (A) and an acid generator (B), and the pattern is used as a current blocking layer. . The current blocking layer was subjected to the DD-MAS method, and the integral ratio ′ of the signal derived from Q4 obtained by 29Si-NMR measurement was 50% or less when the total integration ratio was set to 100%. Further, when the polyoxyalkylene (A) is a polyoxyalkylene obtained by condensing a mixture of the compound (al) and the compound (a2), the current blocking layer is measured by 29 Si-NMR by the DD-MAS method. Get the signal from T. Moreover, the signal originating from Q4 is a signal derived from a helium atom through a state in which a helium atom is bonded to four other helium atoms, and the chemical shift is in the range of -125 to -1 〇 5 ppm ( The 29Si signal of the signal of tetramethyl decane is 〇ppm). The signal from T is not derived from the signal of T1, the signal from T2 and the signal from T3, and the chemical shift is in the range of -80 -27- 201126754 ~_4〇ppm. Signal (the 29Si signal of the signal of tetramethyl decane is used as Oppm). The signal originating from T1 means that the helium atom is bonded to the other helium atom through the oxygen atom and is bonded to the two hydrogen atoms or carbon atoms through the oxygen atom and is derived from the state of being bonded to a hydrogen atom or a carbon atom. The signal of the atom. The signal derived from T2 means that the ruthenium atom is bonded to two other ruthenium atoms through the oxygen atom, and the oxygen atom is bonded to a hydrogen atom or a carbon atom, and the source is in a state of being bonded to a hydrogen atom or a carbon atom. The signal of the atom. The signal derived from T3 indicates that a helium atom is bonded to three other helium atoms through an oxygen atom, and is derived from a signal of a helium atom in a state of being bonded to a hydrogen atom or a carbon atom. The measurement conditions of 29Si-NMR by the DD-MAS method are as follows 〇 Device: manufactured by BRUKER, the device name "AVANCE300" Analysis method: Powder sample 0. 5 g was charged in a MAS cylinder, and solid 29Si-NMR was measured by the DD-MAS method. The MAS revolutions are 5 kHz, the repetition wait time is 30 seconds, and the cumulative number of times is 2800. [Examples] Hereinafter, examples of the present invention will be described more specifically by way of examples. However, the invention is not limited by the examples. In addition, "parts" and "%" are quality standards unless otherwise specified. [1_] Preparation of photosensitive composition -28-201126754 [Examples 1 to U] As shown in the following Table 1, the photosensitive compositions of Examples 1 to 1 were obtained by blending and dissolving the respective components. -29- 5

201126754201126754

CSI ω 質量份 800 800 800 800 800 800 | 800| ω 800 800 800 800 1-Η o 03 C&gt; CN] o Ο] o r-H o CO t-H o r—( o t-H o (Μ 〇 o 03 o T-H i—i 1 0.02 1 0.02 1 0.02 | 寸 DQ CO PQ CM r-H T-H T-H iq o t-H t-H t-H CSJ PQ CSI r*H PQ CM CM RAl 卜 o T-H CO o t-H LO o t-H 寸 &lt; o T-H 〇 o o CO o t—H o CSJ o r-H i-H U〇〇J 〇 i—i 實施例 T-1 03 CO 寸 LO CO 卜 00 0¾ o r—HCSI ω mass 800 800 800 800 800 800 | 800| ω 800 800 800 800 1-Η o 03 C&gt; CN] o Ο] o rH o CO tH or—( o tH o (Μ 03o 03 o TH i – i 1 0.02 1 0.02 1 0.02 | inch DQ CO PQ CM rH TH TH iq o tH tH tH CSJ PQ CSI r*H PQ CM CM RAl 卜 o TH CO o tH LO o tH inch &lt; o TH 〇oo CO ot — H o CSJ o rH iH U〇〇J 〇i—i Example T-1 03 CO inch LO CO 00 03⁄4 or—H

-30- 201126754 表1中各成分詳細如下。 A 1成分： 於經氮氣置換之燒瓶內添加2 0 %馬來酸水溶液1份及 超純水6 9份且加熱至6 5 °C。接著，於1小時內將混合四 甲氧基矽烷25份 '甲基三甲氧基矽烷55份、乙嫌基三甲 氧基矽烷36份及丙二醇單乙基醚14份而成之溶液滴加於 反應容器內，在6 5 °C攪拌2小時。使該反應液恢復至室溫 獲得聚矽氧烷A 1。 A2成分： 於經氮氣置換之燒瓶內添加20%馬來酸水溶液1份及 超純水6 9份且加熱至6 5 °C。接著，於1小時內將混合四 甲氧基矽烷20份、甲基三甲氧基矽烷55份、烯丙基三甲 氧基矽烷30份及丙二醇單乙基醚14份而成之溶液滴加於 φ 反應容器內，在6 5 °C攪拌2小時。使該反應液恢復至室溫 獲得聚矽氧烷A2。 A3成分： 於經氮氣置換之燒瓶內添加甲基三甲氧基矽烷67份 、四乙氧基矽烷19份及丙二醇單乙基醚13〇份，經攪拌 後’在6 0 °C於1小時內將〇 . 1 %草酸水溶液2 4 0份滴加於 反應容器內，在溶液溫度8 5 r攪拌4小時。使該反應液恢 復至室溫獲得聚矽氧烷A 3。 -31 - 201126754 A4成分： 於經氮氣置換之燒瓶內添加草酸0.05份、甲基三甲 氧基矽烷20份、四乙氧基矽烷7份、苯基三甲氧基矽烷 29份及1-甲氧基-2-丙醇25份，經攪拌後，將溶液之溫度 加熱至60 °C。接著，滴加蒸餾水1 8份，滴加結束後，於 1 〇〇°C攪拌溶液3小時。使該反應液恢復至室溫獲得聚矽 氧院A4 » A5成分： 於經氮氣置換之燒瓶內添加甲基三甲氧基矽烷60份 、四乙氧基矽烷40份及1-甲氧基-2-丙醇20份，經攪拌 後，將溶液之溫度加熱至6 0 °C。接著，滴加0. 1 %草酸水 溶液3 8份，滴加結束後，於1 〇 〇 °c攪拌溶液2小時。使該 反應液恢復至室溫獲得聚矽氧烷A 5。 A6成分： 於經氮氣置換之燒瓶內添加甲基三甲氧基矽烷70份 、四乙氧基矽烷20份及丨_甲氧基-2-丙醇22份，攪拌後 ，將溶液之溫度加熱至6 0 °C。接著，滴加〇 · 1 %草酸水溶 液3 9份，滴加結束後，於1 〇 〇乞攪拌溶液2小時。使該反 應液恢復至室溫獲得聚矽氧烷A6。 A7成分： -32- 201126754 於經氮氣置換之燒瓶內添加甲基三甲氧基矽烷40份 、四乙氧基矽烷60份及1-甲氧基-2-丙醇18份，經攪拌 後，將溶液之溫度加熱至6(TC。接著，滴加〇. 1 %草酸水 溶液3 7份，滴加結束後，於1 〇〇°C攪拌溶液2小時。使該 反應液恢復至室溫獲得聚矽氧烷A7。 B1成分：1-(4-正丁氧基萘-1-基）四氫噻吩鑰三氟甲烷 磺酸鹽 B2成分：三苯基銃九氟正丁烷磺酸鹽 B3成分：1-(4,7-二正丁氧基萘-1-基）-四氫噻吩鑰三 氟甲烷磺酸鹽 B4成分：2-[2-(呋喃-2-基）乙炔基-4,6-雙（三氯甲基）-s-三嗪 酸擴散抑制劑（C 1〜C 3成分） C 1成分：2-苯基苯并咪唑 C2 :三辛基胺 C3成分：N-第三丁氧基羰基-2-苯基苯并咪唑 界面活性劑（D 1成分） D1成分：二甲基聚矽氧烷-聚氧伸烷基共聚物（砂氧系 界面活性劑） 溶劑（E1〜E3成分） E1成分：丙二醇單乙基醚 -33- 201126754 E2成分：丙二醇單甲基醚 [2] 電流阻止層之形成 將實施例1至1 1之感光性組成物旋轉塗佈於矽晶圓 或GaN基板上，隨後使用加熱板於l〇〇°C加熱5分鐘，製 作厚度0.5μιη之塗膜。接著，使用對準器（Karl Suss公司 製造，型式「MA-100」），透過各種圖型遮罩以自高壓水 銀燈照射之紫外線（波長3 65nm)曝光。隨後，使用加熱板 於120 °C加熱10分鐘（PEB)，使用2.38質量％濃度之氫氧 化四甲基銨水溶液在23 t浸漬、顯像60秒。以所得圖型 作爲電流阻止層。目的圖型形狀示於圖3。 又，各基板之表面狀態如下。 矽晶圓：表面上有約〇.4μιη之氧化矽膜之略平坦矽晶 圓基板-30- 201126754 The ingredients in Table 1 are detailed below. A 1 component: 1 part of a 20% aqueous solution of maleic acid and 6 parts of ultrapure water were added to a nitrogen-substituted flask and heated to 65 ° C. Next, a solution of 25 parts of tetramethoxydecane, 55 parts of 'methyltrimethoxydecane, 36 parts of ethyltrimethoxydecane, and 14 parts of propylene glycol monoethyl ether was added dropwise to the reaction over 1 hour. Stir in a container at 6 5 ° C for 2 hours. The reaction solution was returned to room temperature to obtain a polyoxyalkylene A 1 . A2 component: 1 part of a 20% aqueous solution of maleic acid and 6 parts of ultrapure water were added to a nitrogen-substituted flask and heated to 65 °C. Next, a solution of 20 parts of tetramethoxynonane, 55 parts of methyltrimethoxydecane, 30 parts of allyltrimethoxydecane, and 14 parts of propylene glycol monoethyl ether was added dropwise to φ over 1 hour. The reaction vessel was stirred at 65 ° C for 2 hours. The reaction solution was returned to room temperature to obtain polyoxane A2. A3 component: 67 parts of methyltrimethoxy decane, 19 parts of tetraethoxy decane and 13 parts of propylene glycol monoethyl ether were added to a flask substituted with nitrogen, and after stirring, 'at 60 ° C for 1 hour 2 0 0 parts of a 1% aqueous solution of oxalic acid was added dropwise to the reaction vessel, and the mixture was stirred at a solution temperature of 8 5 r for 4 hours. The reaction solution was returned to room temperature to obtain polyoxane A 3 . -31 - 201126754 A4 component: 0.05 parts of oxalic acid, 20 parts of methyltrimethoxydecane, 7 parts of tetraethoxydecane, 29 parts of phenyltrimethoxydecane, and 1-methoxyl were added to a nitrogen-substituted flask. 25 parts of 2-propanol, after stirring, the temperature of the solution was heated to 60 °C. Then, 18 parts of distilled water was added dropwise, and after the completion of the dropwise addition, the solution was stirred at 1 ° C for 3 hours. The reaction solution was returned to room temperature to obtain a polyoxane A4 » A5 component: 60 parts of methyltrimethoxydecane, 40 parts of tetraethoxydecane, and 1-methoxy-2 were added to a nitrogen-substituted flask. 20 parts of propanol, after stirring, the temperature of the solution was heated to 60 °C. Next, 3 parts of a 0.1% aqueous solution of oxalic acid was added dropwise, and after completion of the dropwise addition, the solution was stirred at 1 ° C for 2 hours. The reaction solution was returned to room temperature to obtain a polyoxane A 5 . A6 component: 70 parts of methyltrimethoxy decane, 20 parts of tetraethoxy decane and 22 parts of 丨-methoxy-2-propanol were added to a nitrogen-substituted flask, and after stirring, the temperature of the solution was heated to 6 0 °C. Then, 39 parts of a 1% aqueous solution of oxalic acid was added dropwise, and after the dropwise addition was completed, the solution was stirred at 1 Torr for 2 hours. The reaction solution was returned to room temperature to obtain polyoxane A6. A7 component: -32- 201126754 40 parts of methyltrimethoxy decane, 60 parts of tetraethoxy decane and 18 parts of 1-methoxy-2-propanol were added to a nitrogen-substituted flask, and after stirring, The temperature of the solution was heated to 6 (TC. Then, 3 parts of a 1% aqueous solution of oxalic acid was added dropwise, and after the dropwise addition, the solution was stirred at 1 ° C for 2 hours. The reaction solution was returned to room temperature to obtain a polyfluorene. Oxane A7. B1 component: 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophene trifluoromethanesulfonate B2 component: triphenylsulfonium nonafluoro-n-butanesulfonate B3 component: 1-(4,7-Di-n-butoxynaphthalen-1-yl)-tetrahydrothiophene trifluoromethanesulfonate B4 component: 2-[2-(furan-2-yl)ethynyl-4,6 - bis(trichloromethyl)-s-triazine acid diffusion inhibitor (C 1 to C 3 components) C 1 component: 2-phenylbenzimidazole C2: trioctylamine C3 component: N-third Oxycarbonyl-2-phenylbenzimidazole surfactant (component D1) D1 component: dimethyl polyoxane-polyoxyalkylene copolymer (sandoxy surfactant) solvent (E1 to E3) Ingredients) E1 component: propylene glycol monoethyl ether-33- 201126754 E2 composition: C Alcohol monomethyl ether [2] Formation of current blocking layer The photosensitive compositions of Examples 1 to 11 were spin-coated on a tantalum wafer or a GaN substrate, followed by heating at a temperature of 5 ° C for 5 minutes using a hot plate. A coating film having a thickness of 0.5 μm was produced, and then exposed to ultraviolet rays (wavelength of 3 65 nm) irradiated from a high pressure mercury lamp through various pattern masks using an aligner (manufactured by Karl Suss, model "MA-100"). It was heated at 120 ° C for 10 minutes (PEB) using a hot plate, and immersed and developed for 24 seconds at 23 t using a 2.38 mass% aqueous solution of tetramethylammonium hydroxide. The resulting pattern was used as a current blocking layer. The shape is shown in Fig. 3. Further, the surface state of each substrate is as follows. 矽 Wafer: a slightly flat 矽 wafer substrate having a yttrium oxide film of about 4.4 μm

GaN基板：具有高度1.2μιη〜0.4μηι突起之ρ型GaN 基板。GaN基板時之塗膜膜厚表示自高度1_2μιη之突起的 厚度。 [3] 電流阻止層之評價 [3-1]圖型形狀 以電子顯微鏡SEM觀察前述『[2]電流阻止層之形成 』中於各種基板上形成之電流阻止層之形狀’以下列基準 進行評價。評價結果示於表2。 良好：目的之圖型形狀上面形成面積之80%以上。 201126754 稍良好：目的之圖型形狀上面形成面積之未達8 0 %且 60%以上。 不良：目的之圖型形狀上面僅形成面積之未達60%。 [3-2]密著性 將實施例1至12之感光性組成物旋轉塗佈於矽晶圓 或GaN基板上，隨後使用加熱板於120°C加熱1〇分鐘，製 作厚度0.5μιη之塗膜。將所得塗膜張貼於JIS K5400-5-6之 透明膠帶上，評價剝離該透明膠帶時之塗膜殘留。評價基 準如下。評價結果示於表2。 良好：塗膜未被剝離而殘留 不良：塗膜被剝離 [3 - 3 ]絕緣性 於具有如圖4之銅箔2圖型（銅箔膜厚=10μηι)之絕緣 性評價用基板3上塗佈實施例1至1 1之感光性組成物， 使用加熱板於l〇〇°C加熱5分鐘，製作在銅箔2上具有厚 度ΙΟμιη塗膜之基板。隨後，使用對流式烘箱在120°C加 熱10分鐘，使塗膜硬化形成絕緣性評價用膜。以該膜之 體積電阻率（Ω · cm)作爲初期絕緣性。又，各電極間之絕 緣性評價用膜之體積爲1.6xl(T8cm3。隨後使該膜在400°C 燒成，燒成後之膜體積電阻率（Ω · cm)作爲燒成後之絕緣 性。絕緣性之評價基準如下。評價結果示於表2。 良好：體積電阻率1〇ΜΩ · cm以上 -35- 201126754 不良：體積電阻率未達1〇14Ω · cm 表2] _ 實施例 基板 圖型形狀 密著性 絕緣性 圓形 正方形 橢圓 初期 燒成後 1 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 2 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 3 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 4 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 5 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 6 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 7 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 8 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 9 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 10 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 11 矽基板 良好 良好 良好 良好 良好 良好 GaN基板 良好 良好 良好 [4]半導體發光元件 如上述之實施例1至1 1之感光性組成物以微影法獲 -36- 201126754 得之電流阻止層由於可簡易地在各種基板上形成各種形狀 ，故可獲得具有發光效率等良好性能之半導體發光元件。 [5 ]電流阻止層 [實施例1 2〜1 6 ] 以使膜厚成爲1 〇μιη之方式將實施例9〜1 1之感光性 組成物塗佈於矽晶圓上後，以下表3所示之條件加熱處理 獲得塗膜。硏削所得塗膜且以DD-MAS法進行29Si-NMR 之測定。結果示於表3。又，以D D - M A S法進行之2 9 S i -NMR之測定條件之細節如下。 裝置：BRUKER公司製，設備名「AVANCE3 00」 分析方法：將粉末樣品〇.5g充塡於MAS滾筒中，以 DD-MAS法測定固體29Si-NMR。MAS轉數爲5kHz，重複 之等待時間爲30秒，累積次數2800次。 [表3] 實施例 12 13 14 15 16 感光性; 阻成物 實施例9 實施例9 實施例9 實施例10 實施例11 加熱處 理條件 氛圍氣 大氣下 氮氣下 大氣下 大氣下 大氣下 加熱溫度 300°C 500。。 500°C 300。。 500°c 加熱時間 1小時 1小時 1小時 1小時 1小時 Q4訊號之積分比率 10% 19% 17% 8% 31% T訊號之積分比率 70% 70% 60% 90% 40%GaN substrate: a p-type GaN substrate having a height of 1.2 μm to 0.4 μm. The film thickness of the coating film in the case of the GaN substrate indicates the thickness of the protrusions from the height of 1 - 2 μm. [3] Evaluation of current blocking layer [3-1] Shape of the pattern The shape of the current blocking layer formed on various substrates in the above [[2] Formation of current blocking layer] was observed by electron microscope SEM. . The evaluation results are shown in Table 2. Good: 80% or more of the area formed on the shape of the figure. 201126754 Slightly good: less than 80% and more than 60% of the area formed on the shape of the target. Poor: The shape of the figure is only 60% of the area formed above. [3-2] Adhesion The photosensitive compositions of Examples 1 to 12 were spin-coated on a tantalum wafer or a GaN substrate, and then heated at 120 ° C for 1 minute using a hot plate to prepare a coating having a thickness of 0.5 μm. membrane. The obtained coating film was placed on a scotch tape of JIS K5400-5-6, and the coating film remaining when the scotch tape was peeled off was evaluated. The evaluation criteria are as follows. The evaluation results are shown in Table 2. Good: the coating film was not peeled off and remained poor: the coating film was peeled off [3 - 3 ] Insulating on the substrate 3 for insulation evaluation having the pattern of the copper foil 2 as shown in Fig. 4 (copper foil film thickness = 10 μηι) The photosensitive compositions of Examples 1 to 1 were heated at 10 ° C for 5 minutes using a hot plate to prepare a substrate having a coating film having a thickness of ΙΟ μη on the copper foil 2. Subsequently, the coating film was cured by heating at 120 ° C for 10 minutes in a convection oven to form a film for evaluation of insulation. The volume resistivity (Ω · cm) of the film was used as the initial insulating property. Further, the volume of the film for evaluating the insulating property between the electrodes was 1.6 x 1 (T8 cm 3 ), and then the film was fired at 400 ° C, and the film volume resistivity (Ω · cm) after firing was used as the insulating property after firing. The evaluation criteria of the insulation are as follows. The evaluation results are shown in Table 2. Good: Volume resistivity 1 〇Μ Ω · cm or more - 35 - 201126754 Poor: Volume resistivity is less than 1 〇 14 Ω · cm Table 2] _ Example substrate diagram After the initial firing of the shape-insulated insulating circular square ellipse, the substrate is good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good Good GaN substrate is good and good. 4 矽 The substrate is good, good, good, good, good, good, good GaN substrate, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good矽The substrate is good and good. Good GaN substrate is good and good. 8 矽 The substrate is good, good, good, good, good, good, good GaN substrate, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good, good The ruthenium substrate is good, good, good, good, good, good, good GaN substrate, good, good, good [4] semiconductor light-emitting device, such as the above-mentioned photosensitive compositions of Examples 1 to 1 obtained by lithography, -36-201126754, the current blocking layer is simple Since various shapes are formed on various substrates, a semiconductor light-emitting device having excellent performance such as luminous efficiency can be obtained. [5] Current blocking layer [Examples 1 2 to 1 6 ] The film thickness is set to 1 〇 μηη. After the photosensitive composition of Examples 9 to 1 1 was applied onto a ruthenium wafer, a coating film was obtained by heat treatment under the conditions shown in the following Table 3. The obtained coating film was diced and subjected to 29Si-NMR measurement by the DD-MAS method. The results are shown in Table 3. Further, the conditions of the 2 9 S i -NMR measurement by the DD - MAS method were The device is as follows: Device: BRUKER company, device name "AVANCE3 00" Analytical method: The powder sample 〇.5g is charged in the MAS roller, and the solid 29Si-NMR is measured by the DD-MAS method. The MAS rotation number is 5 kHz, repeating The waiting time is 30 seconds and the cumulative number is 2800 times. [Table 3] Example 12 13 14 15 16 Photosensitivity; Resistor Example 9 Example 9 Example 9 Example 10 Example 11 Heat treatment conditions Ambient gas Atmospheric atmosphere Under atmospheric nitrogen atmosphere under atmospheric atmosphere 300 °C 500. . 500 ° C 300. . 500°c Heating time 1 hour 1 hour 1 hour 1 hour 1 hour Q4 signal point rate 10% 19% 17% 8% 31% T signal score ratio 70% 70% 60% 90% 40%

【圖式簡單說明】 圖1爲電流阻止型半導體發光元件之一例之剖面圖 -37- 201126754 圖2爲說明半導體發光元件之製造方法之一例之剖面 圖。 圖3爲說明圖型形狀之評價所用之圖型形狀之一例之 模式圖。 圖4爲說明電絕緣性評價用基材之一例之模式圖。 圖5爲實施例12之以DD-MAS法利用29Si-NMR測定 之NMR圖》 圖6爲實施例13之以DD-MAS法利用29Si-NMR測定 之NMR圖。 圖7爲實施例14之以DD-MAS法利用29Si-NMR測定 之NMR圖。 圖8爲實施例15之以DD-MAS法利用29 Si-NMR測定 之NMR圖。 圖9爲實施例16之以DD-MAS法利用29Si-NMR測定 之NMR圖。 【主要元件符號說明】 1 :樹脂基板 2 :銅箔 3 :絕緣性評價用之基材 100，200 :藍寶石基板 1〇1 ， 201 :緩衝層 110，210:半導體層 111，211 : η型包覆層 -38- 201126754 1 1 2，2 1 2 :活性層 113，213: p型包覆層 1 2 0，2 2 0 :電流擴散層 131，231 :上部電極 132，232:下部電極 1 4 0，2 4 0 :電流阻止層BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an example of a current-sense-type semiconductor light-emitting device. -37-201126754 Fig. 2 is a cross-sectional view showing an example of a method of manufacturing a semiconductor light-emitting device. Fig. 3 is a schematic view showing an example of a pattern shape used for evaluation of the shape of the pattern. 4 is a schematic view showing an example of a substrate for electrical insulation evaluation. Fig. 5 is an NMR chart of Example 12 measured by 29Si-NMR in the DD-MAS method. Fig. 6 is an NMR chart of Example 13 measured by 29Si-NMR in the DD-MAS method. Fig. 7 is an NMR chart of Example 14 as measured by 29Si-NMR in the DD-MAS method. Figure 8 is an NMR chart of Example 15 as measured by 29 Si-NMR in the DD-MAS method. Figure 9 is an NMR chart of Example 16 as measured by 29Si-NMR in the DD-MAS method. [Description of main component symbols] 1 : Resin substrate 2 : Copper foil 3 : Substrate for insulation evaluation 100, 200 : Sapphire substrate 1 〇 1, 201 : Buffer layer 110, 210: Semiconductor layer 111, 211 : η-type package Cladding-38- 201126754 1 1 2,2 1 2 : Active layer 113, 213: p-type cladding layer 1 2 0, 2 2 0 : current diffusion layer 131, 231: upper electrode 132, 232: lower electrode 1 4 0,2 4 0 : current blocking layer

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Claims (1)

201126754 七、申請專利範圍： 1. —種半導體發光元件之製造方法，其爲具有電流阻 止層之半導體發光元件之製造方法，其特徵爲利用微影法 形成由感光性組成物所得之圖型，且以該圖型作爲電流阻 止層。 2. 如申請專利範圍第1項之半導體發光元件之製造方 法，其中前述半導體發光元件具有半導體層、形成於前述 半導體層上之電流擴散層、形成於前述電流擴散層上之電 極、不與前述電極鄰接而位於電極下方且以前述電流擴散 層覆蓋之電流阻止層。 3 ·如申請專利範圍第1或2項之半導體發光元件之製 造方法，其中前述感光性組成物含有聚矽氧烷（A)與感光 性酸產生劑（B)。 4.—種半導體發光元件，其特徵爲藉由如申請專利範 圍第1至3項中任一項之半導體發光元件之製造方法所獲 得。 5 ·—種感光性組成物，其特徵爲其係用於如申請專利 範圍第1或2項中之半導體發光元件之製造方法中。 6 .如申請專利範圍第5項之感光性組成物，其含有聚 矽氧烷（A)與感光性酸產生劑（B)。 7.—種具有電流阻止層之半導體發光元件，其特徵爲 具有電流阻止層，該電流阻止層利用 DD-MAS法，以 29Si-NMR測定時獲得之源自Q4之訊號之積分比率，以全 積分比率設爲100%時，爲50%以下 201126754 8 .如申請專利範圍第7項之半導體發光元件，其具有 利用DD-MAS法以29Si-NMR測定時顯示源自T之訊號之 電流阻止層。201126754 VII. Patent application scope: 1. A method for manufacturing a semiconductor light-emitting device, which is a method for manufacturing a semiconductor light-emitting device having a current blocking layer, characterized in that a pattern obtained by a photosensitive composition is formed by a lithography method, This pattern is used as a current blocking layer. 2. The method of manufacturing a semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device has a semiconductor layer, a current diffusion layer formed on the semiconductor layer, an electrode formed on the current diffusion layer, and not A current blocking layer that is adjacent to the electrode and is under the electrode and covered by the aforementioned current diffusion layer. The method of producing a semiconductor light-emitting device according to claim 1 or 2, wherein the photosensitive composition contains polysiloxane (A) and a photosensitive acid generator (B). A semiconductor light-emitting device, which is obtained by the method for producing a semiconductor light-emitting device according to any one of claims 1 to 3. A photosensitive composition characterized by being used in a method of producing a semiconductor light-emitting device according to claim 1 or 2. 6. The photosensitive composition of claim 5, which comprises a polyoxyalkylene (A) and a photosensitive acid generator (B). 7. A semiconductor light-emitting device having a current blocking layer, characterized by having a current blocking layer which utilizes a DD-MAS method to obtain an integral ratio of a signal derived from Q4 obtained by 29Si-NMR measurement to When the integral ratio is set to 100%, it is 50% or less. 201126754. The semiconductor light-emitting device of claim 7, which has a current blocking layer which exhibits a signal derived from T when measured by 29Si-NMR by the DD-MAS method. . -41 --41 -