201123536 六、發明說明： 【發明所屬之技術領域】 一種發光元件，特別是一種關於基板具有内部散射中心 之發光元件及其製造方法。 〇 【先前技術】 發光二極體(light-emitting diode, LED)的發光原理是利 用電子在η型半導體與p型半導體間移動的能量差，以光的 形式將能量釋放’這樣的發光原理係有別於白熾燈發熱的發 光原理，因此發光二極體被稱為冷光源。此外，發光二極體 具有鬲耐久性、壽命長、輕巧、耗電量低等優點，因此現今 Q 的…、月市場對於發光一極體寄予厚望，將其視為新一代的照 明工具，已逐漸取代傳統光源，並且應用於各種領域，如交 通號誌、背光模組、路燈照明、醫療設備等。 第1圖係習知之發光元件結構示意圖，如第J圖所示， 習知之發光元件湖’包含有—透明基板1G、一位於透明基 板W上之半導體疊層12，以及至少—電極14位於上述半導 體曼層12上，其中上述之铸體疊層12由上而下至少包含 201123536 一第一導電型半導體層12〇、一活性層122,以及一第二導 電型半導體層124。 此外，上述之發光元件10〇更可以進一步地與其他元件 δ連接以形成一發光裝置(Ught_emi出ng。第2圖 為習知之發光裝置結構示意圖，如第2圖所示，一發光裝置 ^ a具有至少一電路202之次載體(sub-mount)20 ;至 〇 ^焊料(Solder)22位於上述次載體20上，藉由此焊料22 將上述發光元件100黏結固定於次載體2〇上並使發光元件 100之基板10與次載體2〇上之電路2〇2形成電連接；以及， -電性連接結構24 ’以雜連接發光元件⑽之電極14與 次麵20上之電路202 ;其中，上述之次載體％可以是導 線架(lead frame)或大尺寸鑲嵌基底(_論§ sub_e)，以方 ❹便發光裝置200之電路規劃並提高其散熱效果。 然而’如第1圖所示’於習知之發光元件1〇〇中，由於 透明基板1G之表面係—平絲面，且透明基板ig之折射率 與外部環境之折射率不同，因此活性層122所發出之光線a 由基板進人外部環境時’容易形成全反射(τ_201123536 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting element, and more particularly to a light-emitting element having an internal scattering center on a substrate and a method of manufacturing the same. 〇[Prior Art] The principle of illuminating a light-emitting diode (LED) is to use the energy difference between electrons moving between an n-type semiconductor and a p-type semiconductor to release energy in the form of light. Different from the principle of illuminating the incandescent lamp, the illuminating diode is called a cold light source. In addition, the light-emitting diode has the advantages of durability, long life, light weight, low power consumption, etc. Therefore, the current market of Q... has a high expectation for the light-emitting body, and it is regarded as a new generation of lighting tools. It gradually replaces traditional light sources and is used in various fields such as traffic signs, backlight modules, street lighting, medical equipment, etc. 1 is a schematic view showing the structure of a conventional light-emitting element. As shown in FIG. J, a conventional light-emitting element lake 'includes a transparent substrate 1G, a semiconductor laminate 12 on a transparent substrate W, and at least an electrode 14 is located above. On the semiconductor layer 12, the above-mentioned cast layer stack 12 includes at least 201123536 a first conductive semiconductor layer 12A, an active layer 122, and a second conductive semiconductor layer 124 from top to bottom. In addition, the above-mentioned light-emitting element 10 can be further connected to other elements δ to form a light-emitting device (Ught_emi ng. FIG. 2 is a schematic structural view of a conventional light-emitting device, as shown in FIG. 2, a light-emitting device a sub-mount 20 having at least one circuit 202; a solder 22 on the sub-carrier 20, by which the light-emitting element 100 is bonded and fixed to the sub-carrier 2 The substrate 10 of the light-emitting element 100 is electrically connected to the circuit 2〇2 on the secondary carrier 2〇; and the electrical connection structure 24' is connected to the electrode 14 of the light-emitting element (10) and the circuit 202 on the sub-surface 20; The above-mentioned secondary carrier % may be a lead frame or a large-sized mosaic substrate (_sub_e) to plan the circuit of the light-emitting device 200 and improve the heat dissipation effect thereof. However, as shown in Fig. 1 In the conventional light-emitting element 1 ,, since the surface of the transparent substrate 1G is a flat surface, and the refractive index of the transparent substrate ig is different from the refractive index of the external environment, the light a emitted by the active layer 122 is entered by the substrate. External environment Total reflection (τ_
InternalInternal
Reflection，TIR)，降低發光元件1〇〇之光摘出效率。 201123536 【發明内容】 -種發“件製造方法，其轉至少包含：提供—基板， 碱槪發光疊層祕板之上m射於基板内部形成 複數個内部散射中心。 【實施方式】 ° 本㈣揭示-種發光树及其製造絲，為了使本發明 之敘述更加詳盡與完備，請參照下列描述並配合第3A圖至 第3J圖之圖式。 第3A圖至第3J圖為本發明製造流程結構示意圖，如第 3A圖所示，提供一基板3〇，其中基板3〇包含一第一表面 3〇2與一第二表面3〇4，其中第一表面3〇2係與第二表面3〇4 ❹ 树，接著’如第3B圖所示，形成複數半導體蠢晶層31於 此基板30之第一表面3〇2上，其中半導體遙晶層3ι由下而 上至少包含-第-導電型料體層31〇、一活性層312，以 及一第二導電型半導體層314。 隨後’如第3C圖所示，细郷侧技雜刻上述半 導體蠢晶層31 ’以裸露部分基板3〇並且使半導體蟲晶層31 形成複數台狀結構之發光疊層32，其中每一發光疊層32均 201123536 裸露部分之第一導電型半導體層310。 - 隨後’如3D圖所示，可以形成至少一電極40於發光疊 層32上。在一實施例中’也可在發光疊層32與電極間選擇 性的形成一透明導電氧化層38 (Transparent Conductive Oxide，TCO) 〇 隨後，如3E-3F圖所示，以雷射能量0.05〜〇.35W，速度 〇 1〇0〜600 mm/sec且焦距為距離基板10-20μιη之雷射光束照 射基板30之第二表面3〇4’以形成複數個基板内部粗化結構 作為内部散射中心36 (scattering center)，其長度可約為 1〜25μιη，寬度可約為2〜5μηι，形狀可為圓點狀、長方體或 其他圖形，且其中上述内部散射中心36之任何一端並不接 觸基板30之上下表面。當反射光打到上述内部散射中心36 〇 時，會產生散射而增加發光角度，減少電極40對光的吸收， 以增加光線輸出。在—實施财，此雷狀束可為一紅外線 田射，例如可為 Nd_YAG laser、Nd-YV04 laser、Nd-YLF laser 或鈦藍寶石雷射⑽anium laser)。如圖3F、3G所示，上述内 部散射中々36可酬紐t分佈祕㈣，包括電極40下 f °在一實施例中，以上述製造方法，如圖3H所示上述内 精射中心36之部分結構也可細基板侧壁。 201123536 最後，再如第圖所示，在基板3〇之第二表面3〇4以 :雷射361劈裂。再如第3J圖所示，以形成複數發光元件_。 在-實施例中’也可於形成複數台狀結構之發光疊層幻 後，先以雷射光束照射基板3〇之第二表面3〇4，以形成複數 個基板内部粗化結構作為内部散射中心36 (scattering center) ’之後再於發光疊層32上形成電極4〇。 〇 在一實施例中’發光元件300之除了基板内具有内部散 射中心36外，基板之四個侧壁可皆為實質不平整表面。在 另一較佳實施例中，發光元件300除了基板之四個側壁可皆 為實質不平整表面’第一表面302也可為一實質不平整表面。 上述之基板30之材質可以是藍寶石、氧化辞 (ZnO)等透明基板’於本實施例中則係採用藍寶石基板；而 發光疊層32由下而上包含第一導電型半導體層31〇、活性 〇 312以及第一導電型半導體層314，其材料包含一種或一種 以上之物質選自鎵(Ga)、鋁(A1)、銦(In)、砷(As)、磷(P)、氮 (N)以及矽(Si)所構成之群組，諸如氮化鎵(GaN)系列材料或磷 化在呂鎵銦(AlGalnP)系列材料等。 此外，透明導電氧化層38之材質選自包含一種或一種 以上之材料選自氧化銦錫(ITO)、氧化銦(In〇)、氧化錫 201123536 (SnO)、氧化編錫(CTO)、氧化錄錫(ΑΤΟ)、氧化録辞(AZO) 與氧化鋅(ZnO)所構成之群組。 « .以上所述之實施例僅係為說明本發明之技術思想及特 點，其目的在使發明技術所屬領域中具有通常知識者能夠瞭 解本發明之内容並據以實施，當不能以之限定本發明之專利 範圍，即大凡依本發明所揭示之精神所作之均等變化或修 〇 飾’仍應涵蓋在本發明之專利範圍内。 【圖式簡單說明】 第1圖為f知之發光元件結構示意圖。 第2圖為f知之發綠置結構示意圖。 第3A圖至第3J圖為本發明製造流程結構示意圖。 【主要元件符號說明】 100 發光元件 10 透明基板 12 半導體疊層 14 電極 120 第一導電型半導體層 122 活性層 124 第二導電型半導體層 200 發光裝置 20 次載體 202 電路 201123536 22 焊料 24 電性連接結構 30 基板 302 第一表面 304 第二表面 32 發光疊層 310 第一導電型半導體層 312 活性層 314 第二導電型半導體層 36 内部散射中心 300 發光元件 361 雷射 38 透明導電氧化層 40 電極Reflection, TIR), reducing the light extraction efficiency of the light-emitting element. 201123536 SUMMARY OF THE INVENTION - A method for manufacturing a piece of material, comprising at least: providing a substrate, wherein an alkali luminescent stack is formed on the substrate to form a plurality of internal scattering centers. [Embodiment] ° (4) In order to make the description of the present invention more detailed and complete, please refer to the following description and cooperate with the drawings of Figures 3A to 3J. Figures 3A to 3J show the manufacturing process of the present invention. The structure diagram, as shown in FIG. 3A, provides a substrate 3, wherein the substrate 3 includes a first surface 3〇2 and a second surface 3〇4, wherein the first surface 3〇2 and the second surface 3 〇4 ❹ tree, then 'as shown in FIG. 3B, forming a plurality of semiconductor stray layer 31 on the first surface 3〇2 of the substrate 30, wherein the semiconductor crystal layer 3 ι includes at least −first-conducting from bottom to top a material layer 31〇, an active layer 312, and a second conductive semiconductor layer 314. Subsequently, as shown in FIG. 3C, the semiconductor doped layer 31' is etched with a thin portion of the substrate and Forming the semiconductor crystal layer 31 into a plurality of mesas The light-emitting laminate 32, wherein each of the light-emitting laminates 32 has a bare portion of the first conductive semiconductor layer 310 of 201123536. - Subsequently, as shown in FIG. 3D, at least one electrode 40 may be formed on the light-emitting laminate 32. In the example, a transparent conductive oxide layer 38 (TCO) may be selectively formed between the light-emitting layer 32 and the electrode. Subsequently, as shown in FIG. 3E-3F, the laser energy is 0.05 to 〇.35W. a laser beam having a focal length of 1〇0 to 600 mm/sec and a focal length of 10-20 μm from the substrate irradiates the second surface 3〇4' of the substrate 30 to form a plurality of internal coarsening structures of the substrate as internal scattering centers 36 (scattering) The center may have a length of about 1 to 25 μm, a width of about 2 to 5 μm, a shape of a dot, a rectangular parallelepiped or the like, and wherein either end of the internal scattering center 36 does not contact the upper and lower surfaces of the substrate 30. When the reflected light hits the internal scattering center 36 ,, scattering occurs to increase the illuminating angle, and the absorption of light by the electrode 40 is reduced to increase the light output. In the implementation, the ray beam can be a red The line field shot can be, for example, a Nd_YAG laser, a Nd-YV04 laser, an Nd-YLF laser or a titanium sapphire laser (10) anium laser. As shown in Figures 3F and 3G, the above internal scattering has a reproducible distribution (4), including In the embodiment, in the above manufacturing method, a part of the structure of the inner fine center 36 shown in FIG. 3H may also be a thin substrate sidewall. 201123536 Finally, as shown in the figure, on the substrate 3 The second surface of the crucible is 3〇4 to: the laser 361 is split. Further, as shown in FIG. 3J, a plurality of light-emitting elements _ are formed. In the embodiment, after the illuminating stack of the plurality of mesa structures is formed, the second surface 3〇4 of the substrate 3 is irradiated with a laser beam to form a plurality of internal roughening structures of the substrate as internal scattering. A center 36 is formed on the light-emitting layer 32 after the center 36 (scattering center). In one embodiment, the four sides of the substrate of the light-emitting element 300, except for the internal scattering center 36 in the substrate, may be substantially uneven surfaces. In another preferred embodiment, the light-emitting element 300 can be substantially non-flat surface except for the four side walls of the substrate. The first surface 302 can also be a substantially uneven surface. The material of the substrate 30 may be a transparent substrate such as sapphire or oxidized ZnO. In the present embodiment, a sapphire substrate is used; and the light-emitting layer 32 includes a first conductive semiconductor layer 31 from the bottom to the top. The germanium 312 and the first conductive semiconductor layer 314 are made of one or more materials selected from the group consisting of gallium (Ga), aluminum (Al), indium (In), arsenic (As), phosphorus (P), and nitrogen (N). And a group of bismuth (Si), such as a gallium nitride (GaN) series material or a phosphide in the AlGalnP series. In addition, the material of the transparent conductive oxide layer 38 is selected from the group consisting of one or more materials selected from the group consisting of indium tin oxide (ITO), indium oxide (In〇), tin oxide 201123536 (SnO), oxidized tin (CTO), and oxidation record. A group of tin (ΑΤΟ), oxidation (AZO) and zinc oxide (ZnO). The embodiments described above are merely illustrative of the technical spirit and characteristics of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and implement them. The scope of the invention, that is, the equivalent variations or modifications made by the spirit of the invention, should still be covered by the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the structure of a light-emitting element of the same. Figure 2 is a schematic diagram of the structure of the green structure of the f. 3A to 3J are schematic views showing the structure of the manufacturing process of the present invention. [Main component symbol description] 100 Light-emitting element 10 Transparent substrate 12 Semiconductor laminate 14 Electrode 120 First conductive type semiconductor layer 122 Active layer 124 Second conductive type semiconductor layer 200 Light-emitting device 20 Sub-carrier 202 Circuit 201123536 22 Solder 24 Electrical connection Structure 30 substrate 302 first surface 304 second surface 32 light emitting laminate 310 first conductive type semiconductor layer 312 active layer 314 second conductive type semiconductor layer 36 internal scattering center 300 light emitting element 361 laser 38 transparent conductive oxide layer 40 electrode