201117410 六、發明說明： 【發明所屬之技術領域】 本發明係有關-種光伏裳置的餘刻製程控制方法，尤 其是指運用自動製程_控制法來監”晶片祕刻率之 -種光伏裝置#_程_方法’藉以達到穩定賴刻製 程參數。 【先前技術】 目前在光伏裝置的製造裎序中之蝕刻製程，係在一矽 晶片（silicon wafer)送入蝕刻機台前’先以人工方式做該矽 晶片之蝕刻製程前重量量測，完成蝕刻製程後，將該矽晶 片移出機台’再以人工方式做該矽晶片之蝕刻製程後重量 量測，並以人工方式計算钱刻製程前與姓刻製程後之重量 差異，而得出該#刻機台的钕刻率（etching rate)，然後與預 定的餘刻率比較，以決定是否調整钱刻製程的參數，例如 機台製程溫度、蝕刻液濃度、矽晶片傳送裝置的傳送速度 等等。 因為上述之程序是以人工方式進行，無法對每一片晶 片進行上述之程序，只能用隨機選取方式，然而，隨機選 取的方式無法「隨時」監控'、記錄並調整碎晶片的餘刻製 程參數。 【發明内容】 本發明為了改善上述i知技術的無法「隨時」監控缺 201117410 點’以期能隨時監控、記錄並調整矽晶 在此提供-種光伏裝置的刻製_制方、_製程參數， 動製程回饋控制法來監控矽晶片的蝕刻率法，其係運用自 本發明運用的自動製程回饋控制法，^ 本身自動在機台内量韻刻製程前與 ^係由餘刻機台 某一個特定的物理量，例如重量或者尺^,程後矽晶片之 刻製程前與蝕刻製程後之該物理量差異、，，亚自動計算蝕 台的蝕刻率（etching rate)，然後該蝕刻人=得出該蝕刻機 率比較，以自動判斷是否調整蝕刻製程二^與預定的蝕刻 製程溫度、蝕刻液濃度、矽晶片傳送裝1、、參數’例如機台 如此週而復始，對每一片送入蝕刻機台的 =送迷度等等。 程序，並且自動回饋钱刻率的記錄以^敕紅石夕晶片做上述 達到能隨時監控矽晶片的蝕刻率鱼你二，刻製程參數， 升蝕刻製程的良率。 健的蝕刻製程，以提 本發明將在下述以—實施例說縣 程控制方法的原理與實施方式。襞置的蝕刻製 【實施方式】 為使貴審查委員能對本發明之特徵 更進-步的認知與瞭解，下文特將本發明之目的及功能有 以及設計的理念原由進行說明，相關細部結構 本發明之特點，詳細說明㈣如下：—委員可以了解 本發明提供一種光伏裝番 在光伏裝置的#刻程序t用^製程控制方法，复 整晶片的婦，以達到穩定的=參^ 201117410 批j顧-所示，該圖係為本 控制方法之一實施例的流程示意圖。如圖 例先伙裝置賴職程控制方法係包括有下列步驟：^ 步驟1:將一晶片送入-飿刻機台； 步驟2:在該蝕刻機台内測量 製程前無刻製程後之竿―.:ί Μ片在侧 計算、記錄其_| 量的差異’並由此 步=預動判斷該綱率與舰刻機台内 :之預疋值疋否有差異’若為否，則重新回 若為是，則往下進行步驟4 ; 步驟4 :由麵刻機台計算餘刻製程參數修正值· 步^驟^該侧機台自動修正其餘刻製程參數，並且回 在本實施例步驟2令該特定的物理量 片的質量或者是尺寸例如厚度，而步 了 乂疋該矽日曰 製程的參數’可以是機台製程溫度 = 片傳送裝置的傳送速度。‘ 夜辰度或者矽曰曰 如此週而復始地對每—片送入钱刻機台内的石夕曰片重 ^上述程序，並且自動回饋餘刻率的記錄以調整^ 參數，達到能隨時監控矽晶片的餘刻率鱼 程，以提升蝕刻製程的良率。 ’、-健的蝕亥】裝 以下以-實際例子說明本實施例。已知條件如下，餘 刻機台長度為2G50mm’起始時’⑨晶片傳送裝置 速度為L2 m/min，侧製程之預定目標值為兹刻製程前盘 201117410 蝕刻製程後之質量差為0 5g, 裝置傳送速度之基本調整比例：：中0二設， m/min/g)。依循本發·刻製程控制方法之製程:—η(0.! 步驟1 ’將一晶片送入該钱刻機台； 步驟2 ··在舰職__聰 德 矽晶片的質量的差異值為0.39g ; 步驟3 ··由紐刻機台自動判斷出該石 異值與該侧機台内設之預定值吻有 ^ = 進行步驟4; ^住下 步驟4 :由紐職台計算出_結果差異值q 預定值吗之土值為(〇· - (〇.5幻=(-0.llg) 了 O.llg)，換算成H片傳送裝置的傳送速度之ς 正值為(-O.llg) * (0.1 m/min/g)二（_〇 〇1 m/min);- 步驟5 :由該餘刻機台自動將石夕晶片傳送裝置的傳送 度修正為（1.2 m/niin) + (_0〇1 m/min) = (ι 19 rn/njin) ’然後再回到步驟}。 · 由上述第一次修正後’矽晶片傳送裝置的傳送速度變 更為1.19m/min，蝕刻機台長度不變(2〇5〇mm)。然後再回到 步驟1將下一片矽晶片送入該蝕刻機台，並繼續重覆相同的蝕 刻製程，完整的程序如下； 步驟1，將下一月晶片送入該蝕刻機台； 步驟2 :在該钱刻機台内測量钱刻製程前與姓刻製程後該 梦晶片的質量的差異值為〇.49g ; 步驟3 :由該蝕刻機台自動判斷出該矽晶片之餘刻結果差 201117410 異值與該蝕刻機台内設之預定值〇.5g有差異，所以往下 進行步驟4; 步驟4 :由該钮刻機台計算出蝕刻結果差異值〇 49g與 預定值 〇.5g 之差值為（〇.49g) - (〇.5g) = (-O.Olg)(少 了 〇.〇lg)’換算成矽晶片傳送裝置的傳送速度之修 正值為（_〇.〇lg) * (0.1 m/min/g) = (-0.001 m/min); 步驟5:由該钱刻機台自動將矽晶片傳送裝置的傳送速201117410 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a process control method for a photovoltaic wafer, in particular to a photovoltaic device using an automatic process_control method to monitor the wafer secret rate. #_程_方法' is used to achieve stable process parameters. [Prior Art] Currently, the etching process in the manufacturing process of photovoltaic devices is preceded by a silicon wafer before being sent to the etching machine. The method performs the weight measurement before the etching process of the germanium wafer, and after the etching process is completed, the germanium wafer is removed from the machine table, and then the weight measurement of the etching process of the germanium wafer is manually performed, and the money engraving process is manually calculated. The difference between the weight of the front and the last name is obtained, and the etching rate of the #刻机台 is obtained, and then compared with the predetermined residual rate to determine whether to adjust the parameters of the process, such as the machine process. Temperature, etchant concentration, transfer speed of the wafer transfer device, etc. Since the above procedure is performed manually, the above procedure cannot be performed for each wafer, only Random selection can be used. However, the random selection method cannot monitor, record and adjust the residual process parameters of the chip. SUMMARY OF THE INVENTION In order to improve the above-mentioned i-knowledge technology, the present invention cannot monitor and record at any time in the future, in order to monitor, record, and adjust the engraving method and process parameters of the photovoltaic device provided herein. The process feedback control method is used to monitor the etch rate method of the ruthenium wafer, which is based on the automatic process feedback control method applied by the present invention, and the automatic process itself is automatically performed in the machine before the machine is programmed with a machine. a specific physical quantity, such as a weight or a ruler, a difference in the physical quantity before and after the etching process of the wafer, and a sub-automatic calculation of an etching rate of the etching station, and then the etching person = Etching probability comparison, to automatically determine whether to adjust the etching process and the predetermined etching process temperature, the etching solution concentration, the wafer transfer device 1, the parameter 'for example, the machine is repeated, and each piece is sent to the etching machine = send Lost and so on. The program, and automatically return the record of the money rate to the above, to achieve the above-mentioned etch rate of the wafer can be monitored at any time, the process parameters, the yield of the etch process. The etch process is described to teach the principles and implementation of the process control method in the following embodiments. Etching system of the device [Embodiment] In order to enable the reviewing committee to further understand and understand the features of the present invention, the purpose and function of the present invention and the concept of the design are explained below, and the related detailed structure is explained. The characteristics of the invention, the detailed description (4) is as follows: - The committee members can understand that the present invention provides a method for controlling the photovoltaic device in the photovoltaic device, and the method for controlling the wafer is to stabilize the wafer = 201117410 batch j As shown in the figure, the figure is a schematic flow chart of an embodiment of the control method. The following example includes the following steps: ^ Step 1: Feed a wafer into the engraving machine; Step 2: After measuring the process without etching in the etching machine - .: ί Μ 计算 计算 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在If the answer is yes, proceed to step 4; Step 4: Calculate the residual process parameter correction value from the surface engraving machine. Step ^ The side machine automatically corrects the remaining engraving parameters, and returns to the steps in this embodiment. 2, the quality of the particular physical tablet or the size, such as thickness, and the parameter of the process can be the machine process temperature = the transfer speed of the film transfer device. 'The night time or the 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 矽曰曰 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石The remaining rate of the wafer is fished to increase the yield of the etching process. ', - Jian's Eclipse" The following describes the present embodiment with a practical example. The known conditions are as follows, the length of the machine is 2G50mm' at the beginning of the '9 wafer transfer device speed is L2 m / min, the predetermined target value of the side process is the engraved process before the disk 201117410 after the etching process, the mass difference is 0 5g , the basic adjustment ratio of the transmission speed of the device:: 0, 2, m/min/g). According to the process of the hair and engraving process control method: - η (0.! Step 1 'send a wafer into the money machine; Step 2 · · The difference in the quality of the ship's __ Congde 矽 wafer 0.39g ; Step 3 ·· The New Engraving Machine automatically judges that the stone value and the predetermined value in the side machine have a kiss ^ = proceed to step 4; ^ Stay in Step 4: Calculated by New Jobs _ The difference value q is the predetermined value of the soil value (〇· - (〇.5幻=(-0.llg) O.llg), which is converted to the transfer speed of the H-chip transfer device. .llg) * (0.1 m/min/g) two (_〇〇1 m/min); - Step 5: The transfer degree of the Shixi wafer transfer device is automatically corrected to (1.2 m/niin by the remaining machine) + (_0〇1 m/min) = (ι 19 rn/njin) ' Then go back to step}. · After the first correction described above, the transfer speed of the wafer transfer device was changed to 1.19m/min, etching. The length of the machine is unchanged (2〇5〇mm). Then return to step 1 to send the next wafer to the etching machine, and continue to repeat the same etching process. The complete procedure is as follows; Step 1, will be The wafer is sent to the etching machine in January; Step 2: In the money machine, the difference between the mass of the dream wafer and the last name is 〇.49g; Step 3: The etching machine automatically determines the difference of the remaining result of the 矽 wafer 201117410 The difference value is different from the predetermined value 〇.5g in the etching machine, and step 4 is performed in the past; Step 4: The difference between the etching result difference value 〇49g and the predetermined value 〇.5g is calculated by the button engraving machine The value is (〇.49g) - (〇.5g) = (-O.Olg) (less 〇.〇lg)' The correction value of the transfer speed converted to the 矽 wafer transfer device is (_〇.〇lg) * (0.1 m/min/g) = (-0.001 m/min); Step 5: Automatic transfer of the transfer speed of the wafer transfer device by the machine
度修正為（1.19 m/min) + (-0.001 m/min) = (1.189 m/min)，四捨玉入約等於119 m/min，也就是維持 不變’然後再回到步驟1。 ' 週而復始地對每一片送入蝕刻機台内的矽晶片重 =虹辽莸序，並且自動回饋蝕刻率的記錄以調整蝕刻製乐》 ^ 此隨時監控矽晶片的餘刻率與穩健的餘刻製 輊，以k升蝕刻製程的良率。. 裂 劍太述者，僅為本發明之實施例，當不能以之限The degree is corrected to (1.19 m/min) + (-0.001 m/min) = (1.189 m/min), and the four rounds of jade are approximately equal to 119 m/min, that is, remain unchanged' and then return to step 1. 'Weighing each piece into the etching machine in the etched wafer weight = Hongliao order, and automatically feedback the etch rate record to adjust the etching process" ^ This time to monitor the residual rate of the 矽 wafer and a stable moment Curing, the yield of the process is increased by k liters. The cracking sword is only an embodiment of the present invention, when it is not possible
變化及修飾，仍將不失::範圍所做之均等 明之精神和_，故都應視為本發明的進—步實施狀况， 201117410 【圖式簡單說明】 圖一係為本發明光伏裝置蝕刻製程控制方法之流程示意 圖。 【主要元件符號說明】 1〜5-步驟Changes and modifications will still be lost: the spirit of the scope and the _, and therefore should be regarded as the implementation status of the present invention, 201117410 [Simplified description of the drawings] Figure 1 is the photovoltaic device of the present invention Schematic diagram of the process of the etching process control method. [Main component symbol description] 1~5-step