201106488 六、發明說明： 【發明所屬之技術領域】 本發明係有關-種太陽能電池吸收層的塗佈方法，尤 其是在非真空之常麗環境下的塗饰方法。 【先前技術】 目前的太陽能電池包括單砂太陽能電池、多晶石夕太 陽能電池、非晶矽太陽能電池、銅銦鎵硒太陽能電池、染 • 料敏化太陽能電池等’其中銅銦鎵栖太陽能電池因為不需 如石夕晶太陽電池依财晶圓’也猶如轉敏化太陽能電 池的特定且昂貴之光敏化純，所需的補為銅、姻、錄 以及硒，因而具有低材料製造成本的優點，且光電轉換率 T尚達20〜3(U，軟性塑膠基板的光電轉換率可達μ%，是 相當具有發展潛力的太陽能電池。 銅銦鎵硒太陽能電池主要包括銅銦鎵二硒層與硫化 鋅層，分別當作P型層與n型層，並在銅銦鎵二栖層與 _ 硫化鋅層的界面形成p_n接面，其中銅銦鎵二硒層是沉積 在當作背面極的鉑薄層上，而銦薄層的底部為玻璃基板。 目前商業化的銅銦鎵硒太陽能電池製程主要係使用殼牌 太陽能電池公司（Shell Solar, Inc·，SSI)所開發的一系 列真空處理製程，然而真空製程需要相當昂貴的真空設備 且維修不易。 驾用技術中另有同步蒸鍵法(Coevaporation)與石西化 法(Selenization) ’用以形成銅銦鎵二硒層。同步蒸鍍法 使用分別包含銅、銦、鎵、硒的不同蒸鍍源，以蒸鍍方式， 同時加熱热錢源’藉以在鉬薄層上蒸鍍出銅銦鎵二碼層， 201106488 其中銅無的加熱溫度為l30(M40(rc，銦把的加熱溫度為 1000〜11GQ°C，鎵乾的加熱溫度為mdc喝乾的加 熱溫度為細〜35GG°C。同步蒸錢法的缺點為操作控制困 難，尤其疋銅蒸鍍源的揮發量不易控制。砸化法使用雙步 驟法(Two-st印Processing)，先將銅銦鎵賤鍵在基板上 以形成先驅質（Precursor)薄膜，接著加入氫化硒，使氫 化硒與先驅質薄膜發生反應而形成銅銦鎵二硒層。但是硒 化法的缺點為，控制組成的自由度不高，難以變化能隙的 • 大小，且薄膜的附著性較差。因此，同步蒸鍍法與砸化法 目前皆屬實驗室階段，尚未達商業量產的階段。 因此’需要-種能在常壓下形《高可靠度且高光轉換 效率之銅銦鎵二砸層的方法，以解決上述習用技術的缺 點。 【發明内容】 本發明之主要目的在提供一種太陽能電池吸收層的 非真空塗佈方法，在非真空的常壓環境下，利用超音波振 動混料機對銅銦鎵砸與混料液進行混合，以形成均句混合 的銅銦鎵砸塗料，並藉複數個超音波喷頭，將銅鋼蘇石西塗 料均勻塗佈在以輸送裝置帶動的鉬薄層上，形成厚度均句 的銅銦鎵赠料層’接著以紅外線加鱗管_銦録石西塗 料層進行烘乾處理，以去除銅銦_塗料層巾殘留的混料 液’形成具吸收光能並轉換成電能的銅銦_吸收層，藉 以形成銅銦鎵砸太陽能電池。 201106488 本發明的吸收層的塗佈方法不需真空環境，因此能大 幅降低製造設備的穌，並可在-般常壓魏下連續製造 銦鎵砸太陽能f池’提高產品的可靠度與穩定性。因 此，本發明可解決上述習知技術的缺失。 【實施方式】 以下配合圖式及元件符號對本發明之實施方式做更 詳細的綱，俾使熟㈣項技藝者在研讀本制書後能據 以實施。 本發明太陽能電池吸收層的非真空塗佈方法係包括 塗佈處理以及烘乾處理，用以在玻璃基板的鉬薄層上形成 銅铜錄ί西層。 參閱第一圖，本發明非真空塗佈方法之塗佈處理示意 圖。如第一圖所示，本發明的塗佈處理係在非真空的常壓 環土兄下，利用超音波振動混料機10對銅銦鎵晒混合物以 及混料液進行攪拌混合，以形成均勻的銅銦鎵硒塗料20。 銅銦鎵砸混合物包含粉末狀或微粒狀的銅銦鎵二砸 (Cu(InGa)Se2) ’而混料液可為純水、去離子水、酒精或丙 酮。 銅銦鎵硒塗料20經輸送管線30輸送至複數個超音波 噴頭40’该等超音波噴頭4〇的下方為具有鉬薄層6〇的坡 璃基板50,其中鉬薄層6〇沉積在玻璃基板5〇上並朝向超 音波喷頭40。玻璃基板5〇由下方的輸送裝置9〇帶動而朝 方向D前進’而該等超音波喷頭4〇的排列係相隔開並對 齊玻璃基板50的鉬薄層60，藉超音波振動噴灑效應對鉬 薄層60進行多次塗佈。每個超音波噴頭40的喷塗量是由 201106488 喷塗控制單TL( ®巾未顯* )㈣，以便將__塗料加 均勻喷灑塗佈在銦_ 6()上而形成厚度均—的銅銦錄砸 層70。201106488 VI. Description of the Invention: [Technical Field] The present invention relates to a coating method for a solar cell absorbing layer, and more particularly to a coating method in a non-vacuum environment. [Prior Art] Current solar cells include single-solar solar cells, polycrystalline solar cells, amorphous germanium solar cells, copper indium gallium selenide solar cells, dye-sensitized solar cells, etc. Because it is not necessary for the Shihuajing solar cell to be a wafer, it is also like the specific and expensive photosensitization of the sensitized solar cell, and the required supplements are copper, marriage, recording and selenium, thus having low material manufacturing cost. Advantages, and the photoelectric conversion rate T is still up to 20~3 (U, the photoelectric conversion rate of the soft plastic substrate can reach μ%, which is quite a solar cell with potential for development. The copper indium gallium selenide solar cell mainly includes a copper indium gallium selenide layer. And the zinc sulfide layer, respectively, as a P-type layer and an n-type layer, and form a p_n junction at the interface between the copper indium gallium azide layer and the _zinc sulfide layer, wherein the copper indium gallium diselenide layer is deposited as a back electrode The thin layer of platinum is the bottom of the thin layer of indium. The current commercial process of copper indium gallium selenide solar cells is mainly developed by Shell Solar, Inc. (SSI). The series vacuum processing process, however, the vacuum process requires relatively expensive vacuum equipment and is not easy to repair. In the driving technology, there are another method of coevaporation and Selenization to form a copper indium gallium selenide layer. The vapor deposition method uses different evaporation sources including copper, indium, gallium, and selenium, and vapor-deposits the same method to heat the hot money source to deposit a copper indium gallium two-layer layer on the thin layer of molybdenum, 201106488 The heating temperature is l30 (M40 (rc, indium heating temperature is 1000~11GQ °C, gallium dry heating temperature is mdc dry heating temperature is fine ~35GG ° C. The disadvantage of synchronous steaming method is operation control Difficulty, especially the evaporation amount of the bismuth copper evaporation source is difficult to control. The hydration method uses a two-step process (First-stamp Processing), first bonding the copper indium gallium on the substrate to form a precursor film, and then adding Selenium hydrogenation causes the hydrogenated selenium to react with the precursor film to form a copper indium gallium diselenide layer. However, the disadvantage of the selenization method is that the degree of freedom in controlling the composition is not high, and it is difficult to change the size of the energy gap and the adhesion of the film. Poor Therefore, the simultaneous vapor deposition method and the deuteration method are currently in the laboratory stage, and have not yet reached the stage of commercial mass production. Therefore, it is required to form a high-reliability and high-light conversion efficiency of copper indium gallium difluoride under normal pressure. The method of the layer is to solve the disadvantages of the above conventional techniques. SUMMARY OF THE INVENTION The main object of the present invention is to provide a non-vacuum coating method for an absorption layer of a solar cell, which utilizes ultrasonic vibration mixing under a non-vacuum atmospheric environment. The machine mixes the copper indium gallium bismuth and the mixed liquid to form a uniform mixed copper indium gallium arsenide coating, and uniformly coats the copper steel sulphide coating with the conveying device by a plurality of ultrasonic jet nozzles. On the thin layer of molybdenum, a copper-indium-gallium gift layer with a uniform thickness is formed, followed by drying with an infrared scaly tube_indium-recording stone coating layer to remove the copper-indium-coating layer residual mixture. A copper indium-absorbing layer that absorbs light energy and converts it into electrical energy, thereby forming a copper indium gallium germanium solar cell. 201106488 The coating method of the absorption layer of the invention does not require a vacuum environment, so the manufacturing equipment can be greatly reduced, and the indium gallium germanium solar energy pool can be continuously manufactured under the normal pressure to improve the reliability and stability of the product. . Therefore, the present invention can solve the above-mentioned drawbacks of the prior art. [Embodiment] Hereinafter, the embodiment of the present invention will be described in more detail with reference to the drawings and the component symbols, so that the skilled (4) skilled person can implement it after studying the book. The non-vacuum coating method of the solar cell absorbing layer of the present invention comprises a coating treatment and a drying treatment for forming a copper-copper layer on a thin layer of molybdenum of the glass substrate. Referring to the first figure, a schematic diagram of the coating treatment of the non-vacuum coating method of the present invention. As shown in the first figure, the coating treatment of the present invention is carried out by using an ultrasonic vibration mixer 10 to stir and mix the copper indium gallium mixture and the mixed liquid under a non-vacuum atmospheric pressure ring. Copper indium gallium selenide coating 20. The copper indium gallium ruthenium mixture contains powdered or particulate copper indium gallium dichloride (Cu(InGa)Se2)' and the mixed solution may be pure water, deionized water, alcohol or acetone. The copper indium gallium selenide coating 20 is transported through a transfer line 30 to a plurality of ultrasonic jets 40'. Below the ultrasonic jet nozzles 4, a glass substrate 50 having a thin layer of molybdenum 6 turns, wherein a thin layer of molybdenum 6 is deposited on the glass. The substrate 5 is turned up and directed toward the ultrasonic showerhead 40. The glass substrate 5 is driven by the lower conveying device 9 而 to advance in the direction D, and the arrangement of the ultrasonic nozzles 4 隔开 is spaced apart and aligned with the thin layer of molybdenum 60 of the glass substrate 50, by the ultrasonic vibration spraying effect The molybdenum thin layer 60 is coated a plurality of times. The amount of spray of each ultrasonic nozzle 40 is controlled by a spray control single TL (201 not shown) (4), so that the __ paint can be evenly sprayed on the indium _ 6 () to form a thickness - The copper indium is recorded in layer 70.
一立接者錢第二圖’本發財真空塗佈方法的烘乾處理 不°如第—圖所7F ’本發明的烘乾處理係在非真空的 常壓環境下，_魏個紅外線加舰管100產生紅外線 熱輻射，朝方向H對銅銦鎵_ 70 it行縣處理，以去 除銅銦鎵_ 7〇中的殘餘混淑，形成具雜光能並轉 換成電能__娜㈣，當作太魏的主要光電 ’其/該等紅外線加熱燈管⑽的排·相隔開並 一知鎵晒，?’且銅銦鎵石西層7 Q的厚度為n $咖。 >閱第一圖本發明非真空塗佈方法的供乾處理 之溫度曲線圖。如第三圖所示，本發明的處理包括加 熱處理與料卩處理，相為加熱財曲㈣與冷卻溫度 曲線S2’其中加熱溫度曲線S1的加熱速率為2〜10ΐ/ 分，而冷卻溫度曲線S2的冷卻速率為2〜1(rc /分且 烘乾處理的最高加熱溫度T1為30〜250它。 、α上所述者僅為用以轉本發明之較佳實施 例丄並非企圖據_本㈣做任何形式上之關，是以 =1:==所作有關本發明之任何修飾或 更自仍應匕括在本發明意圖保護之範疇。 【圖式簡單說明】 ί一圖為本發日_真空塗佈方法的塗佈處理示意圖。 第-圖為本發明非真空塗佈方法的供乾處理示意圖。 201106488 第三圖為本發明非真空塗佈方法的烘乾處理之溫度曲線 圖。 【主要元件符號說明】 10超音波振動混料機 20銅銦鎵硒塗料 30輸送管線 40超音波喷頭 50玻璃基板 60鉬薄層 70銅銦鎵硒層 90輸送裝置 100紅外線加熱燈管 D方向 Η方向 S1加熱溫度曲線 S2冷卻溫度曲線 Τ1最高加熱溫度The second picture of the first person's money, the drying process of the vacuum coating method of the present is not as the first - Figure 7F 'The drying process of the invention is in a non-vacuum atmospheric environment, _Wei infrared plus ship The tube 100 generates infrared heat radiation, and treats the copper indium gallium _ 70 it in the direction H to remove the residual mixture in the copper indium gallium _ 7 ,, forming a stray light energy and converting it into electric energy __娜(四), when The main optoelectronics of Taiwei 'their/the infrared heating lamps (10) are separated by a row and know the gallium, and the thickness of the copper indium gallium layer 7 Q is n $ coffee. > Referring to the first graph, the temperature profile of the dry treatment of the non-vacuum coating method of the present invention. As shown in the third figure, the treatment of the present invention includes a heat treatment and a material treatment, and the heating is a heating curve (4) and a cooling temperature curve S2' wherein the heating rate S1 is heated at a rate of 2 to 10 Å/min, and the cooling temperature curve is obtained. The cooling rate of S2 is 2~1 (rc/min and the highest heating temperature T1 of the drying process is 30~250. The above is only the preferred embodiment for transferring the invention, and is not an attempt) This (4) is to be in any form, and is to be construed as being in accordance with any modification of the present invention, or from the scope of the present invention. Schematic diagram of the coating process of the vacuum coating method. The first figure is a schematic diagram of the dry processing of the non-vacuum coating method of the present invention. 201106488 The third figure is a temperature profile of the drying process of the non-vacuum coating method of the present invention. [Main component symbol description] 10 ultrasonic vibration mixer 20 copper indium gallium selenide coating 30 transfer pipeline 40 ultrasonic nozzle 50 glass substrate 60 molybdenum thin layer 70 copper indium gallium selenide layer 90 conveyor device 100 infrared heating lamp D direction Η direction S1 heating temperature curve S 2 cooling temperature curve Τ1 maximum heating temperature