201106115 六、發明說明： 【發明所屬之技術領域】 本發明涉及曝光裝置和使用該曝光裝置來製造設備的 設備製造方法。 【先前技術】 光刻工序包括曝光工序，該曝光工序將被稱爲掩模或 中間掩模（reticle)的原版的圖案投影至塗敷了被稱爲光 刻膠的感光劑的玻璃基板或晶片等基板上，將該基板曝光 。在FPD(平板顯示器，Flat Panel Display)的製造中， 一般可使用具有包括反射鏡的投影光學系統的曝光裝置。 專利文獻1涉及將玻璃基板等較大螢幕的被曝光體曝 光的投影光學系統。在該文獻中公開了投影光學系統，它 從物體一側起依次具有正的第1反射面、負的第2反射面 、第3反射面；而在第1反射面和第2反射面之間以及第 2反射面和第3反射面之間至少配置有兩枚透鏡。該透鏡 可配置於第2反射面的附近，該第2反射面爲光瞳面。 適應於FPD的大螢幕化和生產率的提高的要求，曝光 區域的面積在增大，入射至投影光學系統的光的能量也隨 之在增大。尤其在投影光學系統的光瞳或其附近，由於光 束收斂，所以能量密度變高。關於構成反射面的反射鏡， 通過選擇線性膨脹係數小的材質和選擇表面吸收率小的反 射膜，比較易於減小變形或進行冷卻等。 然而，由於光的入射而在透鏡中產生的熱在透鏡的周 -5- 201106115 邊部分通過支撐它的部件而容易逸出，但在透鏡的中央部 分則難以逸出。由此，在透鏡中產生例如從周邊部分向中 心部分溫度逐漸升高的不均勻的溫度分佈，這對透鏡附加 了不良的屈光度（折射力）。例如，考慮透鏡由石英所構 成的情況。因爲石英具有正的dn/dt ( η爲折射率，t爲溫 度，dn/dt表示折射率的溫度係數（由於溫度變化所帶來 的折射率的變化）），所以從周邊部分向中心部分溫度逐 漸升高的溫度分佈就對透鏡附加了正的屈光度。如此的不 良屈光度的附加，會帶來成像特性的下降。 (專利文獻1)日本特開2006-078631號公報。 【發明內容】 (發明所欲解決的課題） 本發明的目的在於，抑制由投影光學系統的透鏡可產 生的不均勻的溫度分佈所帶來的成像特性的下降。 (用以解決課題的手段） 本發明的一種曝光裝置，具有投影光學系統，該投影 光學系統將在物面上配置的原版的圖案投影至在像面上配 置的基板；上述投影光學系統具有：在上述物面至上述像 面的光路上，從上述物面起依次配置的第1平面鏡、第1 凹面鏡、凸面鏡、第2凹面鏡、第2平面鏡；和折射光學 系統，在上述第1凹面鏡和上述凸面鏡之間以及上述凸面 鏡和上述第2凹面鏡之間配置，並且具有正的屈光度，上 述折射光學系統包括：第1透鏡，由折射率的溫度變化係 -6- 201106115 數爲正的材料所構成；和第2透鏡，由折射率的溫度變 係數爲負的材料所構成。 (效果） 根據本發明，可抑制由投影光學系統的透鏡可產生 不均勻的溫度分佈所帶來的成像特性的下.降。 【實施方式】 以下參照附圖說明本發明的較佳實施方式。 (第1實施方式） 參照圖1對本發明的第1實施方式的曝光裝置進行 明。第1實施方式的曝光裝置EX1具有：照明系統IL 投影光學系統PO;原版驅動機構（未圖示），在投影 學系統PO的物面OP上配置原版9，並對其進行掃描； 基板驅動機構（未圖示），在投影光學系統P 0的像面 上配置基板18，並對其進行掃描》照明系統IL例如可 括光源LS、第1聚光透鏡3、複眼透鏡4、第2聚光透 5、狹縫規定部件6、成像光學系統7和平面反射鏡8。 源LS例如可包括汞燈1和橢圓反射鏡2。狹縫規定部件 規定原版9的照明範圍（即對原版9進行照明的狹縫形 的光的斷面形狀）。成像光學系統7被配置爲使狹縫規 部件6所規定的狹縫在物面成像。平面反射鏡8在照明 統IL中使光路彎折。 化 的 說 光 和 IP 包 鏡 光 6 狀 定 系 201106115 投影光學系統PO將配置於物面OP的原版9的圖案 投影至配置於像面IP的基板18，由此使基板18曝光。投 影光學系統PO可構成爲等倍成像光學系統、放大成像光 學系統和縮小成像光學系統的其中之一，但較佳構成爲等 倍成像光學系統。投影光學系統P 0在從物面0P至像面 IP的光路上具有從物面0P起依次配置的第1平面鏡11、 第1凹面鏡12、凸面鏡14、第2凹面鏡1 5和第2平面鏡 16。投影光學系統PO還具有折射光學系統20，該折射光 學系統2 0配置於第1凹面鏡1 2和凸面鏡1 4之間以及凸 面鏡14和第2凹面鏡15之間。包括第1平面鏡1 1的鏡 面的平面與包括第2平面鏡16的鏡面的平面相互成90度 角。第1平面鏡11和第2平面鏡16可一體地形成。第1 凹面鏡12和第2凹面鏡15可一體地構成。 折射光學系統20配置於作爲投影光學系統P0的光瞳 面的凸面鏡1 4的附近，其整體可作爲具有小的正的屈光 度的凹凸透鏡而起作用。折射光學系統20包括：第1透 鏡13a，由折射率的溫度變化係數（dn/dt)爲正的材料（ 例如：石英）所構成；和第2透鏡13b，由折射率的溫度 變化係數（dii/dt )爲負的材料（例如：螢石）所構成。折 射光學系統20典型地由第1透鏡13a和第2透鏡13b所 組成，但除了第1透鏡1 3 a和第2透鏡1 3 b，還可以包括 1個或多個透鏡。第1透鏡13a和第2透鏡13b，減小由 構成折射光學系統20的多個透鏡（包括第1透鏡1 3 a和 第2透鏡1 3 b )的溫度變化（對於折射光學系統20的光的 -8 - 201106115 照射）所引起的折射光學系統20的像差。 在由具有正的dn/dt的材料所構成的第1透鏡13a中 ，當其中央部分的溫度高於其周邊部分的溫度時，由此會 附加凸的屈光度。該凸的屈光度除了依存於溫度分佈外， 還依存於第1透鏡13a的厚度。在由具有負的dn/dt的材 料所構成的第2透鏡13b中，當其中央部分的溫度高於其 周邊部分的溫度時，由此會附加凹的屈光度。該凹的屈光 度除了依存於溫度分佈外，還依存於第2透鏡13b的厚度 。第1透鏡13a和第2透鏡13b的厚度被決定爲使得通過 對折射光學系統20的光照射而附加地產生的凸的屈光度 和凹的屈光度之差變小。當折射光學系統20由第1透鏡 13a和第2透鏡13b所組成的情況下，第1透鏡13a和第 2透鏡13b的厚度被決定爲使得通過光照射而對第1透鏡 1 3a所附加的凸的屈光度與對第2透鏡1 3b所附加的凹的 屈光度之差變小。由此，可減小由於對投影光學系統PO 的光照射（典型地是基板18的曝光）所帶來的投影光學 系統PO的光學特性（像差）的變動。 投影光學系統P 〇還可以具有：第1折射光學系統1 0 ，配置於物面OP和第1平面鏡1 1之間；和第2折射光學 系統17，配置於第2平面鏡1 6和像面IP之間。第1折射 光學系統1 0和第2折射光學系統1 7可用於投影光學系統 PO的失真和/或成像倍率的調整。第1折射光學系統1 0 和第2折射光學系統1 7可以是平行平面板。通過利用致 動器使平行平面板變形，可調節投影光學系統PO的失真 -9 - 201106115 和/或成像倍率。 (第2實施方式） 參照圖2對本發明的第2實施方式的曝光裝置EX2進 行說明。在圖2中雖然省略了照明系統IL，但實際上曝光 裝置EX2也與曝光裝置EX1同樣具有照明系統il。第2 實施方式的曝光裝置EX2與第1實施方式不同點在於：在 投影光學系統P 〇中’取代第1折射光學系統1 〇而具有第 1折射光學系統1 0' ’取代第2折射光學系統1 7而具有第 2折射光學系統1 7'。在第2實施方式中，第1折射光學系 統1 〇 ’和第2折射光學系統1 7 ·中的至少一個具有非球面， 由此可擴大原版9的照明範圍（即對原版9進行照明的狹 縫形狀的光的斷面形狀）。由於這一擴大可帶來入射至折 射光學系統20的光的能量密度的增大，所以按照本發明 構成折射光學系統20會變得更爲有用。在第2實施方式 中’投影光學系統PO可構成爲等倍成像光學系統、放大 成像光學系統和縮小成像光學系統的其中之一，但較佳爲 構成爲等倍成像光學系統。 (第3實施方式） 參照圖3對本發明的第3實施方式的曝光裝置EX3進 行說明。在圖3中雖然省略了照明系統IL，但實際上曝光 裝置EX3也與曝光裝置EX1同樣具有照明系統IL。第3 實施方式的曝光裝置EX3與第1實施方式不同點在於··在 -10- 201106115 投影光學系統PO中’取代第1折射光學系統10而具有第 1折射光學系統10·’取代第2折射光學系統17而具有第 2折射光學系統1 7 ’。在第3實施方式中，第1折射光學系 統10'和第2折射光學系統17·中的至少一個具有非球面， 並且第1透鏡13a和第2透鏡13b中的至少一個具有非球 面。由此可擴大原版9的照明範圍（即對原版9進行照明 的狹縫形狀的光的斷面形狀）。由於這一擴大可帶來入射 至折射光學系統2 0的光的能量密度的增大，所以按照本 發明構成折射光學系統20會變得更爲有用。在第3實施 方式中’投影光學系統PO可構成爲等倍成像光學系統、 放大成像光學系統和縮小成像光學系統的其中之一，但較 佳爲構成爲放大成像光學系統。 (第4實施方式） 本發明的較佳實施方式的設備製造方法，例如適用於 半導體設備、FPD的設備的製造。例如，液晶顯示裝置可 通過形成透明電極的工序而製造》形成透明電極的工序可 包括：在蒸鍍了透明導電膜的玻璃基板上塗敷感光劑的工 序；使用上述的曝光裝置將塗敷了感光劑的玻璃基板曝光 的工序；和將玻璃基板顯影的工序。 雖然本發明參照示例性實施方式進行了說明，但需理 解的是本發明不局限於公開的示例性實施方式。後附的申 請專利的範圍應作最寬範圍的解釋，以包括所有的變形和 等價的結構和功能。 -11 - 201106115 【圖式簡單說明】 圖1是槪要表示本發明的第丨實施方式的曝光裝置的 結構的圖。 圖2是槪要表示本發明的第2實施方式的曝光裝置的 結構的圖。 圖3是槪要表示本發明的第3實施方式的曝光裝置的 結構的圖。 【主要元件符號說明】 EX1 :曝光裝置 EX2 :曝光裝置 EX3 :曝光裝置 IL :照明系統 IP :像面 LS :光源 OP :物面 P 〇 :投影光學系統 1 :汞燈 2 :橢圓反射鏡 3 :第1聚光透鏡 4 :複眼透鏡 5 :第2聚光透鏡 6 :狹縫規定部件 -12- 201106115 7 :成像光學系統 8 :平面反射鏡 9 :原版 1 〇 :第1折射光學系統 10'=第1折射光學系統 1 1 :第1平面鏡 12 :第1凹面鏡 13 :第2透鏡 1 3 a :第1透鏡 1 3 b :第2透鏡 1 4 :凸面鏡 1 5 :第2凹面鏡 16 :第2平面鏡 17 :第2折射光學系統 17':第2折射光學系統 1 8 :基板 20 __折射光學系統 -13-201106115 VI. Description of the Invention: TECHNICAL FIELD The present invention relates to an exposure apparatus and an apparatus manufacturing method using the same to manufacture an apparatus. [Prior Art] The photolithography process includes an exposure process of projecting a pattern of a master, called a mask or a reticle, onto a glass substrate or wafer coated with a sensitizer called a photoresist. The substrate is exposed on the substrate. In the manufacture of an FPD (Flat Panel Display), an exposure apparatus having a projection optical system including a mirror can be generally used. Patent Document 1 relates to a projection optical system that exposes an exposed object of a large screen such as a glass substrate. This document discloses a projection optical system having a positive first reflecting surface, a negative second reflecting surface, and a third reflecting surface in order from the object side; and between the first reflecting surface and the second reflecting surface At least two lenses are disposed between the second reflecting surface and the third reflecting surface. The lens may be disposed in the vicinity of the second reflecting surface, and the second reflecting surface is a pupil surface. In response to the demand for large screen and increased productivity of FPD, the area of the exposed area is increasing, and the energy of light incident on the projection optical system is also increased. Especially in the vicinity of the pupil of the projection optical system or the vicinity thereof, since the light beam converges, the energy density becomes high. Regarding the mirror constituting the reflecting surface, it is easier to reduce the deformation or the cooling by selecting a material having a small linear expansion coefficient and a reflecting film having a small surface absorptivity. However, the heat generated in the lens due to the incidence of light is easily escaping through the portion supporting the periphery of the lens at the side of the lens, but it is difficult to escape at the central portion of the lens. Thereby, an uneven temperature distribution such as a gradual increase in temperature from the peripheral portion to the central portion is generated in the lens, which adds a bad refracting power (refractive power) to the lens. For example, consider the case where the lens is made of quartz. Since quartz has a positive dn/dt (η is the refractive index, t is the temperature, dn/dt is the temperature coefficient of the refractive index (the change in the refractive index due to the temperature change)), so the temperature from the peripheral portion to the central portion A gradually increasing temperature distribution adds positive diopter to the lens. The addition of such a poor diopter brings about a decline in imaging characteristics. (Patent Document 1) Japanese Laid-Open Patent Publication No. 2006-078631. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) An object of the present invention is to suppress a decrease in imaging characteristics due to a non-uniform temperature distribution which can be generated by a lens of a projection optical system. (Means for Solving the Problem) An exposure apparatus according to the present invention includes a projection optical system that projects a pattern of an original plate disposed on an object surface onto a substrate disposed on an image surface; the projection optical system has: a first plane mirror, a first concave mirror, a convex mirror, a second concave mirror, and a second plane mirror arranged in order from the object surface on the optical path of the object surface to the image plane; and a refractive optical system in the first concave mirror and the Between the convex mirrors and between the convex mirror and the second concave mirror, and having a positive refracting power, the refracting optical system includes: a first lens composed of a material having a positive refractive index temperature change -6-201106115; The second lens and the second lens are made of a material having a negative temperature coefficient of change in refractive index. (Effects) According to the present invention, it is possible to suppress the downs and downs of the imaging characteristics caused by the uneven temperature distribution of the lens of the projection optical system. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. (First Embodiment) An exposure apparatus according to a first embodiment of the present invention will be described with reference to Fig. 1 . The exposure apparatus EX1 of the first embodiment includes an illumination system IL projection optical system PO, a master drive mechanism (not shown), and a master plate 9 is placed on the object surface OP of the projection system PO and scanned; the substrate drive mechanism (not shown), the substrate 18 is placed on the image plane of the projection optical system P 0 and scanned. The illumination system IL may include, for example, the light source LS, the first condensing lens 3, the fly-eye lens 4, and the second condensing light. Through the slit, the slit defining member 6, the imaging optical system 7, and the plane mirror 8. The source LS may include, for example, a mercury lamp 1 and an elliptical mirror 2. The slit defining member defines the illumination range of the original plate 9 (i.e., the sectional shape of the slit-shaped light that illuminates the original plate 9). The imaging optical system 7 is configured to image the slit defined by the slit gauge member 6 on the object surface. The plane mirror 8 bends the optical path in the illumination system IL. In the projection optical system PO, the projection optical system PO projects the pattern of the original sheet 9 disposed on the object surface OP onto the substrate 18 disposed on the image plane IP, thereby exposing the substrate 18. The projection optical system PO can be constructed as one of an equal magnification imaging optical system, an enlarged imaging optical system, and a reduced imaging optical system, but is preferably constructed as an equal magnification imaging optical system. The projection optical system P 0 has a first plane mirror 11 , a first concave mirror 12 , a convex mirror 14 , a second concave mirror 15 , and a second plane mirror 16 which are disposed in this order from the object plane 0P on the optical path from the object plane 0P to the image plane IP. The projection optical system PO further has a refractive optical system 20 disposed between the first concave mirror 1 2 and the convex mirror 14 and between the convex mirror 14 and the second concave mirror 15. The plane including the mirror surface of the first plane mirror 1 1 and the plane including the mirror surface of the second plane mirror 16 are at an angle of 90 degrees to each other. The first plane mirror 11 and the second plane mirror 16 can be integrally formed. The first concave mirror 12 and the second concave mirror 15 can be integrally formed. The refractive optical system 20 is disposed in the vicinity of the convex mirror 14 which is the pupil plane of the projection optical system P0, and functions as a concave-convex lens having a small positive refractive power as a whole. The refractive optical system 20 includes: a first lens 13a composed of a material having a temperature coefficient of variation (dn/dt) of a refractive index (for example, quartz); and a second lens 13b having a temperature variation coefficient of a refractive index (dii) /dt ) is composed of a negative material (for example, fluorite). The refractive optical system 20 is typically composed of a first lens 13a and a second lens 13b, but may include one or more lenses in addition to the first lens 13a and the second lens 13b. The first lens 13a and the second lens 13b reduce temperature changes (for the light of the refractive optical system 20) of the plurality of lenses (including the first lens 13a and the second lens 13b) constituting the refractive optical system 20. -8 - 201106115 Irradiation of the refractive optical system 20 caused by the illumination. In the first lens 13a composed of a material having a positive dn/dt, when the temperature of the central portion thereof is higher than the temperature of the peripheral portion thereof, convex diopter is thereby added. The convex refracting power depends on the thickness of the first lens 13a in addition to the temperature distribution. In the second lens 13b composed of a material having a negative dn/dt, when the temperature of the central portion thereof is higher than the temperature of the peripheral portion thereof, concave refracting power is thereby added. The concave refracting power depends on the thickness of the second lens 13b in addition to the temperature distribution. The thickness of the first lens 13a and the second lens 13b is determined such that the difference between the convex refracting power and the concave refracting power which are additionally generated by the light irradiation to the refracting optical system 20 becomes small. When the refractive optical system 20 is composed of the first lens 13a and the second lens 13b, the thicknesses of the first lens 13a and the second lens 13b are determined such that the convexity is added to the first lens 13a by light irradiation. The difference between the diopter and the concave diopter added to the second lens 13b becomes small. Thereby, variation in optical characteristics (aberration) of the projection optical system PO due to light irradiation to the projection optical system PO (typically exposure of the substrate 18) can be reduced. The projection optical system P 〇 may further include: a first refractive optical system 10 disposed between the object plane OP and the first plane mirror 11; and a second refractive optical system 17 disposed at the second plane mirror 16 and the image plane IP between. The first refractive optical system 10 and the second refractive optical system 17 can be used for adjustment of distortion and/or imaging magnification of the projection optical system PO. The first refractive optical system 10 and the second refractive optical system 17 may be parallel plane plates. The distortion of the projection optical system PO -9 - 201106115 and/or the imaging magnification can be adjusted by deforming the parallel plane plate by means of an actuator. (Second Embodiment) An exposure apparatus EX2 according to a second embodiment of the present invention will be described with reference to Fig. 2 . Although the illumination system IL is omitted in Fig. 2, the exposure device EX2 actually has the illumination system il as well as the exposure device EX1. The exposure apparatus EX2 of the second embodiment differs from the first embodiment in that the first refractive optical system 1 ′′ is replaced by the first refractive optical system 1 在 in the projection optical system P ' instead of the second refractive optical system. There is a second refractive optical system 1 7'. In the second embodiment, at least one of the first refractive optical system 1 〇' and the second refractive optical system 1 7 has an aspherical surface, thereby expanding the illumination range of the original plate 9 (that is, narrowing the illumination of the original plate 9) The cross-sectional shape of the slit shape of light). Since this enlargement can bring about an increase in the energy density of light incident on the refractive optical system 20, it becomes more useful to constitute the refractive optical system 20 in accordance with the present invention. In the second embodiment, the projection optical system PO may be configured as one of an equal magnification imaging optical system, an amplification imaging optical system, and a reduced imaging optical system, but is preferably configured as an equal magnification imaging optical system. (Third Embodiment) An exposure apparatus EX3 according to a third embodiment of the present invention will be described with reference to Fig. 3 . Although the illumination system IL is omitted in Fig. 3, the exposure device EX3 actually has the illumination system IL as well as the exposure device EX1. The exposure apparatus EX3 of the third embodiment differs from the first embodiment in that, in the projection optical system PO, the first refractive optical system 10 is replaced with the first refractive optical system 10 and the second refractive optical system 10 is replaced by the second refractive optical system 10 The optical system 17 has a second refractive optical system 17'. In the third embodiment, at least one of the first refractive optical system 10' and the second refractive optical system 17' has an aspherical surface, and at least one of the first lens 13a and the second lens 13b has an aspherical surface. Thereby, the illumination range of the original plate 9 (i.e., the cross-sectional shape of the slit-shaped light that illuminates the original plate 9) can be enlarged. Since this enlargement can bring about an increase in the energy density of light incident on the refractive optical system 20, it is more useful to constitute the refractive optical system 20 in accordance with the present invention. In the third embodiment, the projection optical system PO can be constituted as one of an equal magnification imaging optical system, an enlarged imaging optical system, and a reduced imaging optical system, but is preferably configured as an enlarged imaging optical system. (Fourth Embodiment) A device manufacturing method according to a preferred embodiment of the present invention is applied to, for example, a semiconductor device or an FPD device. For example, the liquid crystal display device can be manufactured by a process of forming a transparent electrode. The step of forming a transparent electrode may include a step of applying a sensitizer on a glass substrate on which a transparent conductive film is deposited; and applying the sensitization using the above-described exposure apparatus a step of exposing the glass substrate of the agent; and a step of developing the glass substrate. While the invention has been described with respect to the exemplary embodiments, it is understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the appended patent application is to be interpreted in its broadest scope to include all modifications and equivalent structures and functions. -11 - 201106115 [Brief Description of the Drawings] Fig. 1 is a view showing the configuration of an exposure apparatus according to a third embodiment of the present invention. Fig. 2 is a view showing the configuration of an exposure apparatus according to a second embodiment of the present invention. Fig. 3 is a view showing the configuration of an exposure apparatus according to a third embodiment of the present invention. [Description of main component symbols] EX1: Exposure device EX2: Exposure device EX3: Exposure device IL: Illumination system IP: Image plane LS: Light source OP: Object plane P 〇: Projection optical system 1: Mercury lamp 2: Elliptical mirror 3: First concentrating lens 4 : fly-eye lens 5 : second condensing lens 6 : slit defining member -12 - 201106115 7 : imaging optical system 8 : plane mirror 9 : original plate 1 : first refractive optical system 10 '= First refracting optical system 1 1 : first plane mirror 12 : first concave mirror 13 : second lens 1 3 a : first lens 1 3 b : second lens 1 4 : convex mirror 1 5 : second concave mirror 16 : second plane mirror 17: second refractive optical system 17': second refractive optical system 18: substrate 20__refracting optical system-13-