TW201100190A - Laser irradiation apparatus and method of manufacturing display device using the same - Google Patents

Laser irradiation apparatus and method of manufacturing display device using the same Download PDF

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TW201100190A
TW201100190A TW099112645A TW99112645A TW201100190A TW 201100190 A TW201100190 A TW 201100190A TW 099112645 A TW099112645 A TW 099112645A TW 99112645 A TW99112645 A TW 99112645A TW 201100190 A TW201100190 A TW 201100190A
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substrate
laser
predetermined temperature
temperature
laser beam
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TW099112645A
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Chinese (zh)
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TWI472395B (en
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Young-Cheol Joo
Kwan-Hee Lee
Seung-Yong Song
Young-Seo Choi
Sun-Young Jung
Oh-June Kwon
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Samsung Mobile Display Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/10Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/60Preliminary treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • C03C17/04Surface treatment of glass, not in the form of fibres or filaments, by coating with glass by fritting glass powder
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8426Peripheral sealing arrangements, e.g. adhesives, sealants
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/30Aspects of methods for coating glass not covered above
    • C03C2218/34Masking
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8722Peripheral sealing arrangements, e.g. adhesives, sealants

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A laser irradiation apparatus for bonding a first substrate to a second substrate using bonding members and a method of manufacturing a display device using the same, the laser irradiation apparatus including a stage on which the first substrate is mounted, bonding members disposed between the first substrate and the second substrate, a laser oscillating member configured to irradiate a laser beam onto the bonding members, and a temperature maintaining member co-operating with the first substrate to maintain a temperature of the first substrate at a predetermined temperature.

Description

201100190 六、發明說明: 【發明所屬之技術領域】 具體實施例是關於雷射輻射設備及使用其來製造顯示 裝置之方法。 【先前技術】 在近幾年,顯示裝置已經延伸而包含可攜式薄型平面 顯示裝置。在平面顯示裝置中,電致發光的顯示裝置(其 是自發光型的顯示裝置)會具有優勢,舉例來說,大視角、 良好的對比度以及快速的反應速度。因此,此類顯示裝置 已經聚焦成為下個世代的顯示裝置。特別地,比起無機發 光顯示設備,包含由有機材料所形成的發光層之有機發光 顯示裝置會表現較好(舉例來說,亮度、驅動電壓以及反 應速度特徵)且可以提供多彩影像。 一般來說,有機發光顯示裝置包含第一電極、第二電 極以及-個或多個有機層,該有機層包含發光層。此類有 機層可以是介於第-電極和第二電極之間。第一電極可以 配置在基板上且可以作為陽極。—個或多個 置在第一電極上《面對第一雷μμ# ^ 了弟電極的第二電極可以作為發出 電子的陰極且可以配置在一個七 社個或多個有機層上。 因為第一電極和第二電極 膂疋易受氧化和剝落的傷 害,所以如果周圍水分或氧氣 洛的傷 Ψ , m # is ,χ ^ ^ 皮導入進有機發光顯示設備 中,弟一電極以及弟二電極會是 π宝古撒恭氺翻- 易又氧化作用和剝落物的 如害,有機發先顯不設備的壽命 97 ρI縮紐,發光效率會降低, 201100190 且色彩再現的品質會惡化。因此,當製造有機發光顯示設 備時’會典型地實施用於避免外部水分滲透進有機發光顯 示設備中的密封程序。密封程序會牽涉到層合由有機聚合 物(舉例來說,聚對苯二甲酸乙二醇酯(Polyethylene terephthalate ; PET ))所形成的薄膜於第二電極上。或者, 密封程序會牵涉到形成蓋板或蓋罩(其由金屬或玻璃所形 成,且包含保濕劑)、填入氮氣至藉由蓋板或蓋罩所形成 的内部空間以及使用密封劑(舉例來說,環氧樹脂)來封 Ο 裝蓋板或蓋罩。 【發明内容】 ,因此,具體實施例是針對雷射輻射設備以及使用其來 製造顯示裝置的方法,該方法實質上克服了一個或多個缺 點、限制及/或先前技術的劣勢。 μ具體實施例的特徵是提供雷射賴射設備,該雷射輕射 ^備可以將在雷射輻射期間所產生的壓力最小化,且因此 V最小化在切割表面的破裂。 個上述和其他的特徵和優勢可以藉由提供雷射 備而實現,其使用接合部件來接合第一基板至第二 :板,該雷射輻射設備包含平台,其上架置了第 接合部件,兑@ 土 部件盆έ π —土板和第二基板之間;雷射振盈 八!建構以輻射雷射射束至接合部件上.以及π产 維持部件,其與第一基板相配合以维持第其广-度 *預定溫度。 〇 ^、准持第—基板的溫度於 5 201100190 並且維二二“…成以加熱第-基板至預定溫肩 基板部分和未經雷射射雷射射束輕射的 衣、主雷射射束輻射的部分之間的壓力。 成維:第射::輻射接合部件時,溫度維持部件可以建構 风嘴符弟—基板於預定溫度。 預定溫度可以是大約8(rc至大約10(rc。 溫度維持部件可以配置在平台中。 :度維持部件可以配置在第-基板和平台之間。201100190 VI. Description of the Invention: [Technical Field of the Invention] A specific embodiment relates to a laser radiation apparatus and a method of manufacturing the same using the same. [Prior Art] In recent years, display devices have been extended to include portable thin flat display devices. Among flat display devices, an electroluminescence display device which is a self-luminous type display device has advantages such as a large viewing angle, a good contrast ratio, and a fast reaction speed. Therefore, such display devices have been focused on display devices of the next generation. In particular, an organic light-emitting display device comprising a light-emitting layer formed of an organic material performs better than an inorganic light-emitting display device (e.g., brightness, driving voltage, and reaction speed characteristics) and can provide a colorful image. Generally, an organic light emitting display device includes a first electrode, a second electrode, and one or more organic layers, the organic layer including a light emitting layer. Such an organic layer may be between the first electrode and the second electrode. The first electrode may be disposed on the substrate and may function as an anode. One or more of the second electrodes disposed on the first electrode "the first electrode facing the first electrode" may serve as a cathode for emitting electrons and may be disposed on one or more organic layers. Because the first electrode and the second electrode are easily damaged by oxidation and spalling, if the surrounding moisture or oxygen is scarred, m # is , χ ^ ^ skin is introduced into the organic light-emitting display device, the brother and the electrode The two electrodes will be π 宝古撒恭氺翻 - easy to oxidize and exfoliate, the organic hair first shows the life of the equipment 97 ρI shrink, the luminous efficiency will be reduced, 201100190 and the quality of color reproduction will deteriorate. Therefore, a sealing procedure for preventing external moisture from penetrating into the organic light-emitting display device is typically performed when manufacturing the organic light-emitting display device. The sealing procedure involves laminating a film formed of an organic polymer (e.g., polyethylene terephthalate (PET)) onto the second electrode. Alternatively, the sealing procedure involves forming a cover or cover (which is formed of metal or glass and containing a humectant), filling nitrogen into the interior space formed by the cover or cover, and using a sealant (for example) For example, epoxy resin) to seal the cover or cover. SUMMARY OF THE INVENTION Accordingly, the specific embodiments are directed to laser radiation devices and methods of using the same to fabricate display devices that substantially overcome one or more of the disadvantages, limitations, and/or disadvantages of the prior art. A feature of the specific embodiment is to provide a laser radiation device that minimizes the pressure generated during laser radiation, and thus V minimizes cracking at the cutting surface. The above and other features and advantages can be realized by providing a laser preparation that uses a joint member to engage a first substrate to a second: plate, the laser radiation device comprising a platform on which the first engagement member is mounted @土零件盆έ π - between the soil plate and the second substrate; laser vibration eight! Constructed to radiate a laser beam onto the joint member. and a π-producing member that cooperates with the first substrate to maintain its width-degree* predetermined temperature. 〇^, the temperature of the first-substrate is at 5 201100190 and the dimension of the substrate is to heat the first substrate to the predetermined shoulder substrate portion and the light without the laser beam, the main laser The pressure between the portions of the beam radiation. Dimension: The first shot: When the radiation is engaged, the temperature maintaining member can construct the wind nozzle to the substrate at a predetermined temperature. The predetermined temperature can be about 8 (rc to about 10 (rc. The temperature maintaining member may be disposed in the platform. The degree maintaining member may be disposed between the first substrate and the platform.

食持°p件可以S熱線(hot Wire ) ’其建構成加孰 基板至預定溫度並維持第一基板於預定溫度。’、 接α部件可以是由溶塊所形成。 ^雷射輻射°又備可以更進一步地包含具有圖案的光罩, 圖案對應於接合部件的位置,以便讓雷射射束僅輕射接 合部件。 第基板可以包含複數個元件,每一個元件具有有機 發光單元,望-龙 乐二基板可以配置在第一基板上以密封複數個 凡件’且接合部件可以配置在第〆基板和第二基板之間並I 圍繞者複數個元件。 至 > 一個上述和其他的特徵和優勢可以藉由提供使用 雷射輕射設備來製造平面顯示設備之方法而實現’該雷射 輻射設備是使用接合部件來接合第一基板至第二基板,該 方法包含施加接合部件至第二基板;將第一基板接合至第 一基板,木置經接合的第一基板和第二基板於雷射輻射設 備的平台上,維持第一基板和第二基板於預定溫度;以及 6 201100190 .輻射雷射射束於接合部件上,以熔融接合部件並密封第— 基板和第二基板。 維持第一基板和第二基板於預定溫度可以包含加熱第 一基板和第二基板至預定溫度,該預定溫度不會造成形成 在第一基板上的發光單元退化,並且維持第—基板和第二 基板於預定溫度。 維持第一基板和第二基板於預定溫度可以包含維持第 一基板和第二基板於大約8(rc至大約10{rc的溫度。 〇 接合部件可以是由熔塊所形成。 當雷射射束輻射接合部件時,可以維持第一基板和第 二基板於預定溫度。 至少一個上述和其他的特徵和優勢可以藉由提供雷射 輻射'^備而實現,該雷射輻射設備是使用接合部件來接合 第基板至第一基板,該雷射輻射設備包含雷射振盪部 件,其經建構以輻射雷射射束至接合部件上;溫度維持部 件其用於維持第一基板於預定溫度;以及平台,其經建 U構以容納第—基板、第二基板和溫度維持部件。 【實施方式】 韓國專利申請案第10-2009-0038453號(2009年4月 3〇日申請於韓國智慧財產局)且命名為「雷射輻射設備及 使用其來製造平面顯示設備的方法」是整併於此,以作為 參考。 … 例具體實施例現在將參考隨附圖式而更完整地在下 7 201100190 方描迷;然而’他們可以不同形式來體現且不應該被理解. 成限制於在此所陳述的具體實施例。再者,提供這些具體 實施例’以使這個揭示將徹底且完整,並完整地傳達本發 明的範疇給擅長此技術者。 在圖式中’層和區域的尺寸會被擴大,以用於清楚說 明。亦將了解的是:當層或元件被提及為「在另一層或基 板上」時’它可以直接在其他層或基板上或亦可以出現中 間層更進-步地’將了解的是:當層被提及為「在另一 層下」時,b可以直接在下方且亦可以出現一個或多個中ς、 間層。此夕卜’亦將了解的是:當層被提及為「在兩層之間」 時匕可以疋在兩層間的唯一層,或亦可以出現一個或多 個中間層。自始自終,相似的元件代碼指的是相似的元件。 圖1說明根據具體實施例之雷射轄射設備1〇〇的透視. 圖。圖2說明了圖i的雷射輻射設備1〇〇的剖視圖。參考 圖1和圖2’雷射輻射設備1〇〇可以包含平台ιι〇、雷射振 盪部件120、光罩14〇以及溫度維持部件15〇。 ,第一基板101和第二基板102可以架置在平台11〇上。I) 當雷射射束輻㈣,平台11G可以固定地支撐第—基板101 以及第二基板102。接合部件103可以配置在第一基板1〇1 和第二基板1〇2之間。 雷射振盪部件120可以輻射雷射射束於在第一基板1〇1 和第二基102之間的接合部# 1〇3上,以熔融接合部件 至第-基;^ 101和第二基板1〇2。雷射振盈部件⑽可 以包含雷射頭121以及雷射頭導件122。雷射頭ΐ2ι可以藉 201100190 由雷射頭導件122而支撐,且可以移動地架置上述第一基 板101和第二基板丨Oh雷射頭121可以輻射雷射射束於接 合部件103上,且可以沿著雷射頭導件122而同步地移動 上述第一基板101和第二基板1〇2。 光罩140可以架置於第二基板102的頂表面上。光罩 140可以具有對應於接合部件1〇3的圖案,使得來自於雷射 頭121的雷射射束可以僅輻射在接合部件1〇3上且可以阻 隔而避免輻射到發光單元1 〇4。 ° 接合部件103(其可以配置在第一基板101和第二基板 102之間)可以藉由來自於雷射頭121的雷射射束而熔融至 第一基板ιοί和第二基板102。因此,第一基板ι〇ι和第二 基板102可以被接合在一起。接合部件1〇3可以是由熔塊 所形成。雖然術語熔塊可以泛指粉末狀的玻璃,它可以廣 泛地代表:舉例來說,包含有機材料的膠狀玻璃及/或經由 雷射射束輻射而硬化的固態玻璃。 溫度維持部件15〇可以維持第一基板101和第二基板 ’ 1〇2於預定溫度。在雷射射束輻射於第一基板1〇丨和第二美 板102上之前,溫度維持部件15〇可以加熱第一基板一1〇\ 和第二基板102於預定溫度。當雷射射束輻射於第一基板 101和第二基板102上時,溫度維持部件15〇亦可以維持第 一基板101和第二基板1〇2於預定溫度。或者,當雷射射 束輻射於第一基板101和第二基才反1〇2上的同時,溫度維 持部件150可以加熱並維持第一基板1〇1和第二基板jo? 於預定溫度。 201100190 由於當藉由雷射頭121而輻射的雷射射束輻射於第-基板101和第二基板102上時,溫度維持部# 15〇維持第 -基板101和第二基板102於預定溫度,所以在溶塊、第 -基板101和第二基板102中的麼力可以優勢地降低。關 於磨力’當雷射射束輻射接合部# 103日夺,接合部件103 (舉例來》兒,熔塊)可以被加熱到大約8⑼。C至大約1 〇〇〇 °c。因為雷射射束可以集令於接合部件1〇3上,且可以藉 由光罩140而阻隔以避免輻射到發光單元104,所以發心 元刚不會受到雷射射束影響。然而,塵力會產生在經雷 射射束輻射的基板101、102的部分和未經雷射射束輻射的 基板1〇卜102的部分之間’且因此當基板ι〇ι和1〇2為斜 角時,切割表面會發生非期望的破裂。因為經雷射射束輻 射的基板⑻、102的部分(即,經輕射部分)“埶至高 溫:且未經雷射射束輻射的基板1〇1、1〇2的部分(即,未 經輪射部分)不會加熱,所以會產生屬力,且因此基板⑻、 102的部分之間會有溫差。 备击射射束輻射時,溫度維持部件15〇會 和維持基板101、1〇2於預定溫度而有益地最 =:經輕射部分和基板的― —基板 101 可以配置 的每一者可 的接合部件 ,圖3說明了 ® 1的雷射輻射設備100的第 之平面圖。參考圖3,複數個元件q、c2...、 於第—基板101上。複數個元件、C2…、^ 以包含發光單元104和圍繞著發光單元 201100190 103。一旦第一基板101和第二基板l〇2彼此接合,第—基 板101和第二基板丨02可以呈斜角而對應複數個元件C1、 C1…、cn的零件,且複數個元件C1…、Cn的每一者可 以用作為例如平面顯示裝置。 C) ο 雷射射束可以輻射於複數個元件Ci、C1…、Cn的各個 。103。也就是說,雷射頭121可以輻射雷射射束於 第兀*件Q的接合部件103,且接著可以輻射雷射射束於 相鄰第一元件Cl等的第二元件C2的接合部件ι〇3上。、 一在第一基板上的複數個元件Cl、C1.··、Cn的相鄰 元件間的間隔「t」可以是例如大約數毫米至大約幾十毫米 (mm)。因此,當雷射射束輻射第-元件C丨的接合部: 103時’僅雷射射束正在輻射的第—元件的接合部件⑻ 會加熱至高溫。相鄰第—元件^的第二元件C2的接合部件 103不會藉由雷射射束而加熱。在典型的顯示裝置中,麼力 會產生在對應於第一元侔Γ 1Λ1 件c!之經雷射射束輻射的基板 101、102的部分和對庫於當-_ … 對應於第-讀c2之未經雷射射束輻射 的基板101、102的部分之門 P刀之間。因此,微小破裂會發生在第 一基板101和第二基板1〇2 τ 且田第一基板101和第二 土板102為斜角時,在切割表面上會發生毛邊。 然而,根據具體實施例,因為第一基板ι〇ι和第二基 板102可以藉由溫度維持 ^ , ± 件150而維持基板於預定溫 度,甚至當雷射射束輻射在 上時,對應於第-元件c之„板1〇1和第二基板102 1()2 ^^八 1么雷射射束輻射的基板101、 102的部分和對應於第二元 1 之未經雷射射束輻射的基 201100190 板ιοί、102的部分之間的溫差可以降低。因此,對應於第 一元件Q之經雷射射束輻射的基板1〇卜1〇2的部分和對應 於第二元件a之未經雷射射束輻射的基板1〇1、1〇2的部分 之間的壓力可以降低,因此,當第一基板1〇1和第二基板 102為斜角時,切割表面上的破裂可以降低4,因為二一 基板HH和第二基板1G2可以加熱並料於預定溫度,在 雷射射束輻射後的雷射退火程序可以省略,因而有益地增 加生產量。 溫度維持料150彳以加熱並維持第一基板1〇1和第 ,基板102於不造成發光單元1〇4退化的預定溫度。如果 兀件C,、C2…、(^為平面顯示裝置,發光單元1〇4可以是 有機發光顯示裝置。在此案例中,因為能不造成有機發光 顯示裝置退化的預定溫度會是大約10(rc,溫度維持部件 15?可以加熱並維持第一基*反1〇1和第二基板1〇2於大約 8〇 C至大約1〇(rc的溫度。當第一基板1〇丨和第二基板⑺2 的溫度維持於大約8(rc至大約i〇〇°c時,可以避免發光單 π 104的非期望退化且可以降低切割表面的破裂。 圖4說明了圖i的雷射輻射設備1〇〇的修改的剖視 圖厶如圖1和圖2所說明,溫度維持部件!5〇可以配置在 平。中。或者,如圖4所說明,溫度維持部件15〇可 置在平α 11〇上。參考圖4,第一基板可以架置在 維持4件15G i。溫度維持部件i 5()可以是熱線,該 熱線可以加熱並維持第一基才反1〇1和第二基板Μ於預定 溫度。 12 201100190 現在將解釋根據具體實施例之製造顯示裝置的方法。 可以準備第一基板101和第二基板1〇2。發光單元1〇4可以 配置於第一基板101上,且接合部件1〇3可以配置於第二 基板10 2上。 接著,第一基板101和第二基板102可以彼此接合, 在此方式中,接合部件103可以圍繞各個發光單元104。 接著,可以與彼此接合之第一基板101和第二基板102 可以架置於雷射輻射設備100的平台110上。當雷射射束 輕射於第一基板101和第二基板1〇2上時,平台η〇可以 固定地支撐第一基板101和第二基板102。 接著,可以加熱並維持第一基板101和第二基板102 於預定胤度。如果顯示裝置是有機發光顯示裝置,且發光 單70 104疋有機發光裝置,預定溫度可以是大約80。C至大 約1〇〇 c維持溫度在這些數量之間可以幫助確保有機發光 裝置不會退化。 田力…和維持第一基板101和第二基板102於預定溫 ο f時’可以ϋ射雷射射束於接合料1G3J1,以熔融接合 P牛 並选封第—基板1 ο 1和第二基板102。接合部件 103可以是由熔塊所形成。 根據具體實施例的有機發光顯示裝置的 件的剖視圖。發伞„ _ ^ 先早το 300的詳細構造是如圖5所說明 參考圖 5,、包-k 複數個薄膜電晶體(TFT ) 320可以配置 有機發光二極體330可以配置於TFT 32〇 _t 有機發光二極體a 3〇可以包含像素電極33丨,其電性連接 13 201100190 TFT 320, D己數ϋ電極335,其配置於基板如的整個表面 的上方,以及中間層333,其配置在像素電極Ml和記數器 電極335之間。中間層333可以包含發光層。 TFT 320的每一者可以包含閘極電極321、源極和汲極 電極323 '半導體層327、閘極絕緣層313以及中間絕緣層 315。TFT 320的每一者可以配置於基板3〇ι上。具體實施 例不限制於圖5所說明的TFT32(),且可以使用各種tft, 舉例來說’由有機材料所形成的有機TFT(包含半導體層 327)和由矽所形成的矽TFT。如為所希由例如氧化矽或 形成的緩衝層311可以更進—步地配置在τρτ32〇 和基板3 01之間。 有機發光二極體330可以包含彼此面對之像素電極Mi 和記數器電極335。有機發光二極體330亦可以包含中間層 333,其由有機材料所形成並形成在像素電極331和記數器 電極335之間。包含至少-個發光層的中間層333可以藉 由堆疊複數個層而形成,其將在下方解釋。 ^ 像素電極331可以作為陽極,而記數器電極奶可以 作為陰極。然而,像辛雷格〜 1豕京電極331和記數器電極335的極性 是可以顛倒的。 舉例來說’像素電極331可以是透明電極或反射電極 如果像素電極331是透明電極,像素電極331可以是由 如1丁0、IZO、ZnO或In2〇3所形成。如果像素電極如 反射電極,像素電極331可以包含由例如Ag、Mg、A1、PtThe food holder may have a hot wire which is configured to twist the substrate to a predetermined temperature and maintain the first substrate at a predetermined temperature. The a-part member may be formed of a dissolution block. The laser radiation can further comprise a patterned reticle corresponding to the position of the engaging member so that the laser beam only illuminates the engaging member. The first substrate may include a plurality of components, each of the components having an organic light emitting unit, and the two substrates may be disposed on the first substrate to seal a plurality of the plurality of parts, and the bonding members may be disposed on the second substrate and the second substrate And I surround the components. To the above, one or the other features and advantages can be achieved by providing a method of manufacturing a flat display device using a laser light-emitting device that uses a bonding member to bond the first substrate to the second substrate, The method includes applying a bonding component to a second substrate; bonding the first substrate to the first substrate, placing the bonded first substrate and the second substrate on the platform of the laser radiation device, maintaining the first substrate and the second substrate At a predetermined temperature; and 6 201100190. The radiation laser beam is beamed onto the joint member to melt the joint member and seal the first substrate and the second substrate. Maintaining the first substrate and the second substrate at the predetermined temperature may include heating the first substrate and the second substrate to a predetermined temperature, the predetermined temperature does not cause degradation of the light emitting unit formed on the first substrate, and maintaining the first substrate and the second The substrate is at a predetermined temperature. Maintaining the first substrate and the second substrate at the predetermined temperature may include maintaining the first substrate and the second substrate at a temperature of about 8 (rc to about 10 {rc. The 〇 joint member may be formed by the frit. When the laser beam The first substrate and the second substrate may be maintained at a predetermined temperature when the component is radiated. At least one of the above and other features and advantages may be achieved by providing laser radiation using a bonding component. Bonding the substrate to the first substrate, the laser radiation device comprising a laser oscillating member configured to radiate a laser beam onto the bonding member; the temperature maintaining member for maintaining the first substrate at a predetermined temperature; and a platform It is constructed to accommodate the first substrate, the second substrate, and the temperature maintaining member. [Embodiment] Korean Patent Application No. 10-2009-0038453 (applied to the Korea Intellectual Property Office on April 3, 2009) The method of "Laser radiation device and the method for manufacturing the same using the same" is hereby incorporated by reference. Completely described in the following paragraphs; however, they may be embodied in different forms and should not be construed as being limited to the specific embodiments set forth herein. Further, these specific embodiments are provided to make this disclosure The scope of the present invention is fully and fully conveyed to those skilled in the art. In the drawings, the dimensions of layers and regions will be expanded for clarity of explanation. It will also be understood that when layers or components are mentioned When it is "on another layer or substrate" it can be directly on other layers or substrates or the intermediate layer can be further advanced. It will be understood that when the layer is referred to as "under another layer" , b can be directly below and one or more of the middle and middle layers can also appear. This will also be understood: when the layer is mentioned as "between two layers", it can be placed between the two floors. The sole layer, or one or more intermediate layers may also be present. From the beginning, the similar component code refers to a similar component. Figure 1 illustrates the perspective of a laser igniting device 1 根据 according to a specific embodiment. Figure 2. Figure 2 illustrates the figure i A cross-sectional view of the radiation device 1A. Referring to Figures 1 and 2, the laser radiation device 1A may include a stage ιι, a laser oscillating member 120, a reticle 14A, and a temperature maintaining member 15A. The 101 and the second substrate 102 may be mounted on the stage 11A. I) When the laser beam (four), the stage 11G may fixedly support the first substrate 101 and the second substrate 102. The joint member 103 may be disposed between the first substrate 1〇1 and the second substrate 1〇2. The laser oscillating member 120 may radiate a laser beam on the joint portion #1〇3 between the first substrate 〇1 and the second base 102 to melt the joint member to the first base; the first substrate and the second substrate 1〇2. The laser oscillating member (10) can include a laser head 121 and a laser head guide 122. The laser head ΐ2ι can be supported by the laser head guide 122 by 201100190, and the first substrate 101 and the second substrate 丨Oh laser head 121 can be movably mounted to radiate the laser beam on the joint member 103. And the first substrate 101 and the second substrate 1〇2 may be synchronously moved along the laser head guide 122. The photomask 140 may be placed on the top surface of the second substrate 102. The photomask 140 may have a pattern corresponding to the joint member 1〇3 such that the laser beam from the laser head 121 may be radiated only on the joint member 1〇3 and may be blocked to avoid radiation to the light-emitting unit 1〇4. The bonding member 103 (which may be disposed between the first substrate 101 and the second substrate 102) may be fused to the first substrate ι and the second substrate 102 by a laser beam from the laser head 121. Therefore, the first substrate ι and the second substrate 102 can be joined together. The joint member 1〇3 may be formed of a frit. Although the term frit may refer broadly to powdered glass, it can be broadly represented, for example, as a colloidal glass comprising an organic material and/or as a solid glass that is hardened by irradiation of a laser beam. The temperature maintaining member 15A can maintain the first substrate 101 and the second substrate '1' at a predetermined temperature. The temperature maintaining member 15A may heat the first substrate -1 and the second substrate 102 at a predetermined temperature before the laser beam is radiated onto the first substrate 1 and the second substrate 102. The temperature maintaining member 15A can also maintain the first substrate 101 and the second substrate 1〇2 at a predetermined temperature when the laser beam is radiated onto the first substrate 101 and the second substrate 102. Alternatively, while the laser beam is radiated onto the first substrate 101 and the second substrate, the temperature maintaining member 150 may heat and maintain the first substrate 1〇1 and the second substrate jo at a predetermined temperature. 201100190, when the laser beam radiated by the laser head 121 is radiated onto the first substrate 101 and the second substrate 102, the temperature maintaining portion #15 maintains the first substrate 101 and the second substrate 102 at a predetermined temperature, Therefore, the force in the dissolution block, the first substrate 101, and the second substrate 102 can be advantageously reduced. Regarding the grinding force 'when the laser beam radiation joint portion 103 is taken, the joint member 103 (for example, the frit) can be heated to about 8 (9). C to about 1 〇〇〇 °c. Since the laser beam can be placed on the joint member 1〇3 and can be blocked by the reticle 140 to avoid radiation to the light-emitting unit 104, the core element is not affected by the laser beam. However, the dust force is generated between the portion of the substrate 101, 102 that is irradiated by the laser beam and the portion of the substrate 1 that is not irradiated by the laser beam 'and thus the substrates ιι and 1〇2 When it is beveled, undesired cracking can occur on the cutting surface. Because the portion of the substrate (8), 102 that is irradiated by the laser beam (ie, through the light-emitting portion) "spots to a high temperature: and the portion of the substrate 1〇1, 1〇2 that is not irradiated by the laser beam (ie, not The passing portion does not heat, so a force is generated, and thus there is a temperature difference between the portions of the substrates (8), 102. When the radiation of the target beam is irradiated, the temperature maintaining member 15 and the sustaining substrate 101, 1〇 2 beneficially at a predetermined temperature =: each of the achievable joint members of the light-emitting portion and the substrate - substrate 101, Figure 3 illustrates a first plan view of the laser radiation device 100 of the ® 1. 3, a plurality of elements q, c2, ..., on the first substrate 101. The plurality of elements, C2, ..., include the light emitting unit 104 and surrounds the light emitting unit 201100190 103. Once the first substrate 101 and the second substrate L〇2 are bonded to each other, and the first substrate 101 and the second substrate 丨02 may be obliquely angled to correspond to a plurality of components C1, C1, . . . , cn, and each of the plurality of components C1 . . . , Cn may be used as, for example. Flat display device C) ο Laser beam can be radiated in multiple Each of the pieces Ci, C1, ..., Cn. 103. That is, the laser head 121 can radiate the laser beam to the joint member 103 of the second member Q, and then can radiate the laser beam adjacent to the first The bonding member ι 3 of the second element C2 of the element C1 or the like. The interval "t" between the adjacent elements of the plurality of elements C1, C1, . . . , Cn on the first substrate may be, for example, approximately From millimeters to about tens of millimeters (mm). Therefore, when the laser beam radiates the joint of the first element C: 103, only the joint member (8) of the first element to which the laser beam is radiating is heated to a high temperature. The joint member 103 of the second member C2 adjacent to the first member is not heated by the laser beam. In a typical display device, the force is generated in the portion of the substrate 101, 102 corresponding to the laser beam radiation corresponding to the first element Λ1Λc! and the pair is stored in -_ ... corresponds to the first reading Between the gates P of the portions of the substrates 101, 102 that are not irradiated by the laser beam of c2. Therefore, when the minute crack occurs in the first substrate 101 and the second substrate 1〇2 τ and the first substrate 101 and the second earth plate 102 are at an oblique angle, burrs are formed on the cut surface. However, according to a specific embodiment, since the first substrate ι and the second substrate 102 can maintain the substrate at a predetermined temperature by the temperature maintaining, the member 150, even when the laser beam is irradiated, corresponding to the first - a portion of the substrate 101, 102 of the element c and the second substrate 102 1 (1), and a portion of the substrate 101, 102 irradiated with the laser beam and the unradiated beam radiation corresponding to the second element The temperature difference between the portions of the base 201100190 board ιοί, 102 can be reduced. Therefore, the portion of the substrate 1 corresponding to the laser beam radiation of the first element Q and the portion corresponding to the second element a The pressure between the portions of the substrates 1〇1, 1〇2 irradiated by the laser beam can be lowered, so that when the first substrate 1〇1 and the second substrate 102 are beveled, the crack on the cut surface can be lowered. 4. Since the two substrates HH and the second substrate 1G2 can be heated and fed to a predetermined temperature, the laser annealing process after the laser beam irradiation can be omitted, thereby advantageously increasing the throughput. The temperature maintenance material is heated to 150 Torr. Maintaining the first substrate 1〇1 and the first substrate 102 without causing the light emitting unit 1预定4 Degraded predetermined temperature. If the components C, C2, ..., are planar display devices, the light-emitting unit 1〇4 may be an organic light-emitting display device. In this case, since the organic light-emitting display device is not degraded The predetermined temperature may be about 10 (rc, temperature maintaining member 15? may heat and maintain the first base *reverse 〇1 and the second substrate 〇2 at a temperature of about 8 〇C to about 1 〇 (rc. When the temperature of the substrate 1 and the second substrate (7) 2 is maintained at about 8 (rc to about i 〇〇 °c), undesired degradation of the illuminating single π 104 can be avoided and cracking of the cut surface can be reduced. Fig. 4 illustrates Fig. A modified cross-sectional view of the laser radiation device 1A, as illustrated in Figures 1 and 2, the temperature maintaining member !5〇 can be placed in a flat. Alternatively, as illustrated in Figure 4, the temperature maintaining member 15 can be placed Referring to Fig. 4, the first substrate can be mounted to maintain 4 pieces of 15G i. The temperature maintaining part i 5 () can be a hot wire, which can heat and maintain the first base to reverse 1 〇 1 and The second substrate is at a predetermined temperature. 12 201100190 will now be explained according to the specific A method of manufacturing a display device according to an embodiment. A first substrate 101 and a second substrate 1〇2 may be prepared. The light emitting unit 1〇4 may be disposed on the first substrate 101, and the bonding member 1〇3 may be disposed on the second substrate 10 Next, the first substrate 101 and the second substrate 102 may be bonded to each other, in this manner, the bonding member 103 may surround each of the light emitting units 104. Next, the first substrate 101 and the second substrate 102 which may be bonded to each other may be The rack is placed on the platform 110 of the laser irradiation apparatus 100. When the laser beam is lightly incident on the first substrate 101 and the second substrate 1〇2, the stage n〇 can fixedly support the first substrate 101 and the second substrate. 102. Next, the first substrate 101 and the second substrate 102 may be heated and maintained at a predetermined temperature. If the display device is an organic light emitting display device and the light emitting unit is 70 104 疋 organic light emitting device, the predetermined temperature may be about 80. C to about 1 〇〇 c Maintaining temperature between these quantities can help ensure that the organic light-emitting device does not degrade. Tian Li... and maintaining the first substrate 101 and the second substrate 102 at a predetermined temperature ο" can lasing the laser beam to the bonding material 1G3J1 to melt-bond the P-bull and select the first substrate 1 ο 1 and the second substrate 102. The joint member 103 may be formed of a frit. A cross-sectional view of a member of an organic light emitting display device according to a specific embodiment. The detailed structure of the hairpin „ _ ^ first early το 300 is as illustrated in FIG. 5 with reference to FIG. 5 , and the package-k plurality of thin film transistors (TFT ) 320 may be configured with the organic light emitting diode 330 and may be disposed on the TFT 32 〇 _ The organic light-emitting diode a 3〇 may include a pixel electrode 33丨 electrically connected to the 13 201100190 TFT 320, the D-number electrode 335 disposed above the entire surface of the substrate, and the intermediate layer 333, the configuration thereof Between the pixel electrode M1 and the counter electrode 335. The intermediate layer 333 may include a light emitting layer. Each of the TFTs 320 may include a gate electrode 321, a source and a drain electrode 323 'a semiconductor layer 327, a gate insulating layer 313 and an intermediate insulating layer 315. Each of the TFTs 320 may be disposed on the substrate 3. The specific embodiment is not limited to the TFT 32() illustrated in FIG. 5, and various tfts may be used, for example, 'from organic materials. The formed organic TFT (including the semiconductor layer 327) and the germanium TFT formed of germanium may be further disposed between the τρτ32〇 and the substrate 301 as the buffer layer 311 formed by, for example, ytterbium oxide. Organic light-emitting diode 330 can The pixel electrode Mi and the counter electrode 335 face each other. The organic light emitting diode 330 may also include an intermediate layer 333 formed of an organic material and formed between the pixel electrode 331 and the counter electrode 335. The intermediate layer 333 of at least one of the light-emitting layers may be formed by stacking a plurality of layers, which will be explained below. ^ The pixel electrode 331 can function as an anode, and the counter electrode milk can serve as a cathode. However, like Sinhale ~ The polarity of the first electrode 331 and the counter electrode 335 can be reversed. For example, the pixel electrode 331 can be a transparent electrode or a reflective electrode. If the pixel electrode 331 is a transparent electrode, the pixel electrode 331 can be Formed by IZO, ZnO or In2 3. If the pixel electrode is a reflective electrode, the pixel electrode 331 may comprise, for example, Ag, Mg, A1, Pt

Pd ' Au ' Ni ' Nd ' ir » /-V ^ 或Cr所形成的反射層以及由例: 14 201100190 ITO、IZO、ZnO或Ιη203所形成的層。 記數器電極335可以是透明電極或反射電極。如果記 數器電極335是透明電極,記數器電極335可以包含由例 如Li、Ca、LiF/Ca、LiF/Α卜Α1及/或Mg所形成的層,以 面對在像素電極331和記數器電極335之間的中間層333。 此外’辅助電極或匯流排電極線可以由透明電極所形成, 該透明電極是由例如ITO、IZ0、Zn〇或In2〇3的材料所形 成。如果記數器電極335是反射電極,記數器電極335可 Ο 以藉由沉積例如Li、Ca、LiF/Ca、LiF/Al、Α1及/或Mg而 形成。 像素界定層(PDL) 319可以在像素電極33丨的外部形 成預定厚度,以覆蓋像素電極331的周圍區域^ pDL 319 可以界定發光區域且可以增加像素電極33丨和記數器電極 335之間的空間,以降低在像素電極331的周圍區域之電 場PDL 319亦可以避免像素電極331和記數器電極335 之間的短路。 ◎ 包含至少一個發光層的中間層333可以配置在像素電 極331和記數器電極335之間。中間層333可以由例如低 分子的有機材料或高分子的有機材料所形成。 如果中間層333是由低分子的有機材料所形成,中間 層333可以具有單層結構或多層結構,也就是說是藉由堆 疊例如電洞注入層(HIL)、電洞傳送層(HTL)、有機發 射層(EML)、電子傳送層(ETL)及/或電子注入層(EIL) .所形成。低分子的有機材料之範例可以包含例如銅苯二曱 15 201100190 藍(CuPc; copper phthalocyanine)、N,N'-二(萘-1-基)·Ν,Ν,- 一本基聯苯胺(ΝΡΒ ; N,N'-di(naphthalene-l-yi). NA’-diphenyl-benzidine )以及三(8-羥基喹啉)化鋁(Alq3 ; tris-(8-hydroxyquinoline)aluminum)。低分子的有機材料可 以藉由例如使用光罩或類似者的真空沉積而形成。 如果中間層3 3 3是由高分子的有機材料所形成,中間 層333可以具有包含例如HTL和EML的結構。HTL可以包 含例如聚(3,4-二氧乙基塞吩)(PEDOT ; poly(3,4-ethylene-dioxythiophene),且 EML 可以包含例如 基於聚本基乙烯(p〇ly_phenyienevjnyiene )或基於聚第 (polyfluorene )的高分子的有機材料。 有機發光二極體330可以電性連接至TFT 320,該TFT 320是配置在有機發光二極體33〇的下方。如果使用覆蓋 TFT 320的平坦化層317,有機發光二極體33〇可以配置於 平坦化層317上,且有機發光二極體33〇的像素電極331 可以透過形成在平坦化層317中的接觸孔洞而電性連接至 TFT 320。 形成於基板301上的有機發光二極體33〇可以藉由密 封基板302而密封。密封基板3〇2可以由任何各種材料而 形成,舉例來說,如上所述的玻璃和塑膠。 因為藉由密封程序來阻隔100%的外部雜質(舉例來 說’水分或氧氣){無法實行的,所以使用密封程序來避 免外部雜質進入頂部發射主動矩陣的有機發光顯示裝置不 會是良好的解決方案’也就是說’其是特別易受水分的傷 4 201100190 害°此外’在頂部發射主動矩陣的有機發光顯示設備中使 用密封程序的確會是困難的。因此,已經建議了使用熔塊 來作為密封劑以改善基板和蓋罩之間的黏合性之封裝。 封裝會牵涉到施加熔塊至玻璃基板,以完全地密封基 板和蓋罩之間的空間’因而更有效地保護有機發光顯示設 備。詳細地’封裝會牵涉到施加熔塊至有機發光顯示裝置 的密封部分,以及藉由移動雷射輻射設備而輻射雷射射束 於有機發光顯示裝置的密封部分上以使熔塊硬化。 如果雷射射束是局部地輻射以熔融熔塊而不影響週遭 境,壓力會建立在經雷射射束輻射的部分和未經雷射射 束輻射的部分之間,且微小的破裂會發生在熔塊和基板 中。又’當基板為斜角時,毛邊會形成在切割表面上,且 基板會破裂。 如上所述,根據具體實施例之雷射輻射設備和使用雷 射轄射設備來製造平面顯示裝置的方法可以避免當雷射射 束輻射時所產生的壓力,且因此可以降低㈣表面的破裂。A reflective layer formed of Pd ' Au ' Ni ' Nd ' ir » /-V ^ or Cr and a layer formed by the example: 14 201100190 ITO, IZO, ZnO or Ιη203. The counter electrode 335 may be a transparent electrode or a reflective electrode. If the counter electrode 335 is a transparent electrode, the counter electrode 335 may include a layer formed of, for example, Li, Ca, LiF/Ca, LiF/Α1, and/or Mg to face the pixel electrode 331 and The intermediate layer 333 is between the electrodes 335. Further, the auxiliary electrode or the bus bar electrode line may be formed of a transparent electrode which is formed of a material such as ITO, IZ0, Zn〇 or In2〇3. If the counter electrode 335 is a reflective electrode, the counter electrode 335 can be formed by depositing, for example, Li, Ca, LiF/Ca, LiF/Al, Α1, and/or Mg. A pixel defining layer (PDL) 319 may be formed to a predetermined thickness outside the pixel electrode 33A to cover the surrounding area of the pixel electrode 331. The pDL 319 may define a light emitting region and may increase between the pixel electrode 33A and the counter electrode 335. The space to lower the electric field PDL 319 at the peripheral region of the pixel electrode 331 can also avoid a short circuit between the pixel electrode 331 and the counter electrode 335. ◎ An intermediate layer 333 including at least one light emitting layer may be disposed between the pixel electrode 331 and the counter electrode 335. The intermediate layer 333 may be formed of, for example, a low molecular organic material or a high molecular organic material. If the intermediate layer 333 is formed of a low molecular organic material, the intermediate layer 333 may have a single layer structure or a multilayer structure, that is, by stacking, for example, a hole injection layer (HIL), a hole transport layer (HTL), An organic emission layer (EML), an electron transport layer (ETL), and/or an electron injection layer (EIL) are formed. Examples of low molecular organic materials may include, for example, copper benzoquinone 15 201100190 blue (CuPc; copper phthalocyanine), N, N'-bis(naphthalen-1-yl) hydrazine, hydrazine, - a benzyl aniline (ΝΡΒ) N,N'-di(naphthalene-l-yi). NA'-diphenyl-benzidine) and tris-(8-hydroxyquinoline)aluminum. The low molecular organic material can be formed by, for example, vacuum deposition using a photomask or the like. If the intermediate layer 323 is formed of a high molecular organic material, the intermediate layer 333 may have a structure including, for example, an HTL and an EML. The HTL may comprise, for example, poly(3,4-diethoxyethylphene) (PEDOT; poly(3,4-ethylene-dioxythiophene), and the EML may comprise, for example, based on polybenzene ethylene (p〇ly_phenyienevjnyiene) or based on poly (Polyfluorene) polymer organic material. The organic light-emitting diode 330 may be electrically connected to the TFT 320, which is disposed under the organic light-emitting diode 33. If a planarization layer 317 covering the TFT 320 is used. The organic light-emitting diode 33A can be disposed on the planarization layer 317, and the pixel electrode 331 of the organic light-emitting diode 33 can be electrically connected to the TFT 320 through a contact hole formed in the planarization layer 317. The organic light emitting diode 33 on the substrate 301 can be sealed by sealing the substrate 302. The sealing substrate 3 can be formed of any of various materials, for example, glass and plastic as described above. Procedure to block 100% of external impurities (for example 'moisture or oxygen'), which cannot be implemented, so use a sealing procedure to avoid external impurities entering the top emission active matrix of the organic light-emitting display The placement will not be a good solution 'that is to say' it is particularly vulnerable to moisture damage 4 201100190 harmful ° In addition to the use of sealing procedures in the top emission active matrix of organic light-emitting display devices can indeed be difficult. Therefore, already It is recommended to use a frit as a sealant to improve the adhesion between the substrate and the cover. The package involves applying a frit to the glass substrate to completely seal the space between the substrate and the cover' and thus more effective Protecting the organic light-emitting display device. In detail, the package may involve applying a frit to the sealing portion of the organic light-emitting display device, and irradiating the laser beam to the sealed portion of the organic light-emitting display device by moving the laser radiation device to Hardening the frit. If the laser beam is locally radiated to melt the frit without affecting the surroundings, the pressure builds up between the portion irradiated by the laser beam and the portion not irradiated by the laser beam, and Tiny cracks can occur in the frit and the substrate. Also, when the substrate is beveled, the burrs are formed on the cutting surface and the substrate breaks. , According to the radio transmitting apparatus administer laser irradiation apparatus of the embodiment and use of particular embodiments mine producing flat display device can be avoided when the pressure at the exit laser beam generated by the radiation, and (iv) can be reduced fracture surface.

範例舉體實施例已經在此揭示,雖然使用了特定術 语’但它們是用來概略性且敘述性地解釋並沒有限制的目 的。因此,揸長此技術者將了解:各種形式和細節的改變 將不會背離本發明的精神和範疇, 圍所陳述。 ^以如下方巾請專利範 【圖式簡單說明】 對於擅長此技術者,藉由參者隨 柯由 > 哼ϋ附圖式而詳細地敘述 17 201100190 範例舉體實施例 易見,其中: 以及 过彳”他的特徵和優勢將變得更顯而 雷射輻射設備的第一基板的平面圖; 的圖1的雷射輻射設備之剖視圖; 圖1說明了根據具體實施例 圖2說明了圖1的雷射轄射 圖3說明了圖1的 圖4說明了經修改 之雷射輻射設備的透視圖; 設備的剖視圖; 的 圖5說明了根據具體實施例的 剖視圖。 部分有機發光顯示設備 【主要元件符號說明】 100 雷射賴射設備 101 第一基板 102 第二基板 103 接合部件 104 發光單元 110 平台 120 雷射振堡部件 121 雷射頭 122 雷射頭導件 140 光罩 150 溫度維持部件 300 發光單元 301 基板 18 201100190 302 311 313 315 317 319 320 321 () 323 327 330 331 333 335 Ci C2 O t 密封基板 緩衝層 閘極絕緣層 中間絕緣層 平坦化層 像素界定層 薄膜電晶體 閘極電極 源極和没極電極 半導體層 有機發光二極體 像素電極 中間層 記數器電極 第一元件 第二元件 相鄰元件的間隔 19Exemplary embodiments have been disclosed herein, although specific terminology has been used, but they are used for purposes of illustration and not limitation. Therefore, it will be appreciated by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention. ^Please refer to the patent specification for the following squares [Simplified description of the drawings] For those who are good at this technology, the detailed description of the example is made by the reference person with the reference of the figure. 201100190 Example of the example is easy to see, wherein: And a cross-sectional view of the first substrate of the laser radiation device; the laser radiation device of FIG. 1; FIG. 1 illustrates a diagram of FIG. 2 according to a specific embodiment. Figure 3 of Figure 1 illustrates a perspective view of a modified laser radiation device; a cross-sectional view of the device; Figure 5 illustrates a cross-sectional view of a particular embodiment of the organic light-emitting display device. DESCRIPTION OF KEY SYMBOLS] 100 laser radiation apparatus 101 First substrate 102 Second substrate 103 Bonding part 104 Light-emitting unit 110 Platform 120 Laser vibration member 121 Laser head 122 Laser head guide 140 Photomask 150 Temperature maintenance unit 300 light unit 301 substrate 18 201100190 302 311 313 315 317 319 320 321 () 323 327 330 331 333 335 Ci C2 O t sealed substrate buffer layer gate insulation interlayer insulation A pixel define layer planarizing layer a thin film transistor gate electrode and the source electrode of the semiconductor layer not OLED pixel electrode layer, counter electrodes of the first intermediate member second member 19 spaced adjacent elements

Claims (1)

201100190 七、申請專利範圍: _ ^種使用接合部件來接合卜基板至第二基板的雷 田^ °又備’該雷射輻射設備包含: 平台,其上架置了該第一基板; _卩件其配置在該第一基板和該第二基板之間; 雷射振盈Dp件,其經建構以輕射雷射射束於該接合部 件上;以及 a度維持。p件,其與該第一基板相配合以維持該第一 基板的溫度於預定溫度。 2·根據申請專利範圍第1項的雷射輻射設備,其中該溫 A寺卩件是建構成加熱該第_基板至該預定溫度並且維 X第基板於邊預定溫度,以降低經雷射射束輻射的基 板。卩刀和未經雷射射束輻射的部分之間的壓力。 3.根據申請專利範圍第1項的雷射輯射設備,其中當雷 射射束輕射該接合部件時,該溫度維持部件是建構成維持 該第—基板於該預定溫度。 …广根據申請專利範圍第1項的雷射輻射設備,其中該預 定溫度是大約8(TC至大約10(rc。 5.根據申請專利範圍第i項的雷射輕射設備,其中該溫 度維持部件是配置在該平台中。 6·根據中凊專利範圍第i項的雷射轄射設備,其中該溫 度維持部件是配置在該第一基板和該平台之間。 7·根據申請專利範圍第丨項的雷射輻射設備,其中該溫 維持。卩件是熱線,其建構成加熱該第—基板至該預定溫 20 201100190 度並維持該第一基板於該預定溫度。 8 ·根據申請專利範圍第1項的雷射輻射設備,其中該接 合部件是由該熔塊所形成。 9.根據申請專利範圍第1項的雷射輻射設備,其更進一 步地包含具有圖案的光罩’該圖案對應於該接合部件的位 置,以便讓雷射射束僅輻射該接合部件。 1 〇.根據申請專利範圍第1項的雷射輻射設備,其中: 該第一基板包含具有有機發光單元的複數個元件; Ο 該第二基板是配置在該第一基板上,以密封複數個元 件;以及 該接合部件是配置在該第一基板和該第二基板之間並 圍繞著複數個元件。 11_ 一種使用雷射輕射設備來製造平面顯示設備之方 法,該雷射輻射設備使用接合部件來接合第一基板至第二 基板,該方法包含: 施加該接合部件至該第二基板; 〇 接合該第一基板至該第二基板; 架置經接合的該第一基板和該第二基板於該雷射轄射 設備的平台上; 維持該第一基板和該第二基板於預定溫度;以及 韓射雷射射束於該接合部件上’以炼融該接合部件並 密封該第一基板和該第二基板。 12.根據申请專利範圍第11項的方法,其中維持該第一 基板和該第二基板於該預定溫度包含: 21 201100190 加熱該第一基板和該第二基板至該預定溫度,該預定 溫度不造成形成於該第一基板上的發光單元退化;以及 維持該第一基板和該第二基板於該預定溫度。 13.根據申請專利範圍第12項的方法,其中維持該第— 一基板和該 基板和該第二基板於該預定溫度包含維持該第 第二基板於大約80 ° C至大約1 〇〇。C的溫度。 14.根據申請專利範圍第丨丨項的方法,其中該接合部件 是由熔塊所形成。 I5.根據申請專利範圍第 …… 田由町射果福射 該接合部件時,該[基板和該第二基板是維持於該預定 溫度。 種使用接合部件來接合第一基板至第二基板的雷 。t叹備,該雷射輻射設備包含: 件上:振盪』件’其經建構以輻射雷射射束於該接合部 溫度維持部件 以及 其用於維持該第一基板於預定溫度; 平台,其經建構以容納 溫度維持部件。 該第一基板、該第二基板和該 八、圖式: (如次頁) 22201100190 VII. Patent application scope: _ ^ Kind of use of the joint member to bond the substrate to the second substrate of Lei Tian ^ ° and the 'the laser radiation device includes: a platform on which the first substrate is mounted; _ 卩It is disposed between the first substrate and the second substrate; a laser oscillation Dp piece is constructed to lightly laser beam onto the joint member; and a degree is maintained. And a p-piece that cooperates with the first substrate to maintain the temperature of the first substrate at a predetermined temperature. 2. The laser radiation apparatus according to claim 1, wherein the temperature A temple element is constructed to heat the first substrate to the predetermined temperature and the dimension X substrate is at a predetermined temperature to reduce the laser beam. Beam irradiated substrate. The pressure between the file and the portion that is not irradiated by the laser beam. 3. The laser array apparatus of claim 1, wherein the temperature maintaining member is configured to maintain the first substrate at the predetermined temperature when the laser beam is lightly incident on the joint member. ...the laser radiation apparatus according to claim 1, wherein the predetermined temperature is about 8 (TC to about 10 (rc. 5. The laser light-emitting device according to the scope of claim i, wherein the temperature is maintained The component is disposed in the platform. The laser ray-receiving device according to the invention of claim 5, wherein the temperature maintaining component is disposed between the first substrate and the platform. The laser radiation device of the present invention, wherein the temperature is maintained. The component is a hot wire, which is configured to heat the first substrate to the predetermined temperature 20 201100190 degrees and maintain the first substrate at the predetermined temperature. 8 · According to the patent application scope The laser radiation apparatus of the first aspect, wherein the joint member is formed by the frit. The laser radiation apparatus according to claim 1, further comprising a mask having a pattern. In the position of the joint member, so that the laser beam radiates only the joint member. The laser radiation device according to claim 1, wherein: the first substrate comprises organic hair a plurality of components of the light unit; Ο the second substrate is disposed on the first substrate to seal the plurality of components; and the bonding component is disposed between the first substrate and the second substrate and surrounds the plurality of 11_ A method of manufacturing a flat display device using a laser light-emitting device, the laser radiation device using a bonding member to bond a first substrate to a second substrate, the method comprising: applying the bonding member to the second substrate; 〇 bonding the first substrate to the second substrate; mounting the bonded first substrate and the second substrate on a platform of the laser ray-receiving device; maintaining the first substrate and the second substrate at a predetermined temperature And a Korean laser beam on the bonding member to smelt the bonding member and seal the first substrate and the second substrate. 12. The method according to claim 11, wherein the first substrate is maintained And the second substrate comprises: 21 201100190 heating the first substrate and the second substrate to the predetermined temperature, the predetermined temperature not being formed on the first base The illuminating unit is degraded; and the first substrate and the second substrate are maintained at the predetermined temperature. The method of claim 12, wherein the first substrate and the substrate and the second substrate are maintained The predetermined temperature includes a temperature at which the second substrate is maintained at a temperature of from about 80 ° C to about 1 ° C. The method according to claim 3, wherein the joint member is formed of a frit. According to the scope of the patent application... When the field member shoots the joint member, the [substrate and the second substrate are maintained at the predetermined temperature. The use of the joint member to join the first substrate to the second substrate The laser radiation device comprises: an oscillating member that is configured to radiate a laser beam at the junction temperature maintaining member and to maintain the first substrate at a predetermined temperature; It is constructed to accommodate a temperature maintaining component. The first substrate, the second substrate, and the eighth figure: (as in the next page) 22
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