201043383 六、發明說明： . 【發明所屬之技術領域】 本發明係關於雷射加工方法及雷射加工裝置，特別是 關於沿脆性材料基板表面之劃線預定線照射雷射光，形成 劃線槽之雷射加工方法及為實施該方法之雷射加工裝置。 【先前技術】 做為將玻璃基板、半導體基板、陶瓷基板等脆性材料 〇 基板分斷加工之方法之1種，有使用雷射光之加工方法。 在此方法係藉由先使雷射光沿脆性材料基板表面之劃線預 定線移動同時照射，形成劃線槽。之後，藉由以折斷裝置 等於脆性材料基板上對劃線槽之兩側施加按壓力而將基板 沿劃線槽分斷（參照專利文獻1及2)。 如以上之以雷射光於脆性材料基板表面形成劃線槽之 場合，被使用之雷射光係以聚光透鏡聚集，焦點位置被設 定於脆性材料基板之上面附近。藉由以上做法，在雷射光 Ο 之焦點位置產生因光能吸收而導致之消熔（ablation)，可使 焦點位置附近之脆性材料往外部蒸散。之後，藉由使焦點 位置移動同時進行消熔加工可沿劃線預定線形成劃線槽。 專利文獻1:日本特開2005_271563號公報 專利文獻2:日本特開2005-314127號公報 【發明内容】 [發明欲解決之課題] 以使用記載於專利文獻1之習知消熔加工形成劃線槽 3 201043383 之方法於消熔產生部分有衝擊壓導致之裂痕或溶融及急冷 導致之微小裂痕產生之虞。因此’有端面強度變低之虞。 此外’以使用記載於專利文獻2之習知消熔加工形成 一j線槽之方法可藉由減少被照射之脈衝雷射光之往玻璃之 熱擴散抑制熔融來抑制凹凸等表面缺陷、裂痕等之產生。 然而’在如顯示面板等非常薄(例如厚度〇 5随以下)之玻璃 基板形成劃線槽之場合’即使使用記載於專利文獻2之方 法亦無法獲得充分之端面強度。 本發明之課題在於即使在將玻璃基板等脆性材料基板 以脈衝雷射光消熔加工之場合，於加工部分亦不易產生缺 陷、裂痕等，可維持加工後之高端面強度。 [解決課題之手段j 第1毛明之雷射加工方法係沿脆性材料基板表面之劃 線預定線照射雷射光，形成劃線槽，其特徵在於：包含： 將脈衝雷射光聚光後對脆性材料基板表面照射之雷射光昭 射步驟：沿劃線預定線掃晦前述雷射光之雷射光掃猫步 驟；前述脈衝雷射光之雷射強度係、ΚΟχ⑻以上10χ 下；熱輸人量⑽m2減性材料之線膨服係數 (10— /K)之值為3000以上1〇〇ηΛ丨、，丁七卢々 上10000以下之範圍；外接於前述脈 衝雷射光之聚光徑之正方形内之脈衝數為2脈衝以上。 此種雷射加工方法係於雷射消炫加工之同時，被雷射 光照射之脆性材料基板受埶旦彡鄕 又熱衫響而加工部熔融。以此種加 工方法可抑制脆性材料基板 持高端面強度。 板之加…之缺陷或裂痕，維 發明之方法申，前 第2發明之雷射加工方法係於第 201043383 述熱輸入量（J/cm2)x脆性材料之線膨脹係數（1〇-7/κ)之值更 理想為3600以上8800以下之範圍。 第3發明之雷射加工方法係於第1發明之方法中，在 前述熱輸入量（J/cm2)x脆性材料之線膨脹係數（1〇-7/κ)之值 為3800以上7600以下之範圍之場合，前述正方形内之脈 衝數更理想為5脈衝以上。 在此’在線膨脹係數較小之場合’為使加工部熔融有 必要使熱輸入量增多。針對此點，為使脈衝雷射光之重疊 〇 率增大，使外接於前述脈衝雷射光之聚光徑之正方形内之 脈衝數為5脈衝以上較理想。 第4發明之雷射加工方法係於第丨至第3發明之任一 方法中，前述脈衝雷射光之脈衝寬度為lns以上1〇〇〇ns以 下。 在此場合，脈衝雷射光對被照射之加工部位給予熱影 響較容易。因此，不提高脈衝雷射光之雷射強度便可使加 工端面溶融。 〇 第5發明之雷射加工方法係於第丨至第4發明之任一 方法中，别述脈衝雷射光係波長3〇〇nm以下之紫外線雷射 光。 在此場合，以丨個光子能量脆性材料基板内之電子之 激發開始，可效率良好地脈衝雷射光。因此，不提高脈衝 雷射光之雷射強度便可使加工端面熔融。 第6發明之雷射加工襄置係沿脆性材料基板表面之劃 線預定線照射雷射光，形成劃線槽，其特徵在於·具備： 具有發送脈衝雷射光之雷射振盈器及將被振盈之脈衝雷射 5 201043383 光聚光後照射之聚光光學機構之雷射照射機構；使前述雷 射照射機構沿脆性材料基板表面之劃線預定線相對移動之 移動機構；前述脈衝雷射光之雷射強度係i 〇χ1〇8以上丨〇χ 10 W/cm以下，熱輸入量（J/cm2)x脆性材料之線膨脹係數 (10 /K)之值為3000以上1〇〇〇〇以下之範圍；外接於前述脈 衝雷射光之聚光徑之正方形内之脈衝數為2脈衝以上。 藉由使用此種裝置形成劃線槽，可抑制脆性材料基板 之加工端面之缺陷或裂痕，維持高端面強度。 [發明之效果] 以如以上之本發明，即使在將玻璃基板等脆性材料基 板以脈衝雷射光消熔加工之場合，於加工部分亦不易產生 缺、裂痕等，可維持加工後之高端面強度。 【實施方式】 [雷射加工裝置] 於圖1顯不本發明之一實施形態之雷射加工裝置。此 雷射加工裝置具備雷射振盪器丨、反射鏡機構2、透鏡機構 3、XY載台4。由雷射振盪器丨、反射鏡機構2、透鏡機構 3構成雷射照射機構’ ώ XY載台4構成移動機構。 雷射振盪器1係振盪脈衝雷射光。此雷射振盪器丨只 要疋YAG雷射、IR雷射等周知之脈衝雷射光之振盪器，並 未特引Ρ艮定。對應於被加工之脆性材料基才反5之材質適當 k擇可消溶加X之波長之雷射即可。此外，脈衝雷射光之 脈衝寬度為可雷射消熔加工且為對脆性材料隸5給予熱 影響而為1PS以上1000s以下，更理想為-以上i〇〇〇ns 201043383 以下之範圍較理想。 ' 纟射鏡機構2係與透鏡機構3 -起形成聚光光學機 構’變更脈衝雷射光之進行方向以使可對脆性材料基板5 從大致鉛直方向照射脈衝雷射光。做為反射鏡機構2，可使 用1或複數之鏡面，，亦可利用稜鏡、繞射光柵等。 透鏡機構3係將脈衝雷射光加以聚光者。詳言之’此 透鏡機構3係視脆性材料基板5之厚度，調整脈衝雷射光 聚光位置即焦點位置之上下方向位置。此焦點位置之調整 〇可藉由更換透鏡機構3之透鏡來調整，亦可藉由未圖示之 致動器變更透鏡機構3之上下方向之位置加以調整。 XY載台4係載置作為分斷對象之玻璃基板等脆性材料 基板5之平台’可於彼此正交之χ方向及γ方向移動。藉 由使此ΧΥ載台4於X方向及¥方向以既定速度移動，^ 自由變更載置於ΧΥ載台4之脆性材料基板5與脈衝雷射光 之相對位置。通常錢Χ Υ載台4移動’沿形成於脆性材料 基板5之表面之劃線槽6之預定線使脈衝雷射光移動。此 〇 外，加工時之χγ載台4之移動速度係以未圖示之控制部控 制，如此、，脈衝雷射光以既定之重疊率照射於脆性材料基 板5。 [消溶加工之例] 圖2係顯示利用脈衝雷射光之消熔加工之一例之圖。 如此圖所示，從雷射振盪器丨射出之脈衝雷射光被透鏡機 構3聚光在脆性材料基板5之上面附近。脈衝雷射光被吸 收之場合，如圖2(a)所示，脆性材料基板5之焦點位置附近 被加熱。 7 201043383 脆性材料基板5之隹點杨 Α '、、、點位置附近之溫度超過脆性材料 基板5之沸點之場合，如 何付 圖2(b)所示，超過沸點之部分其 成刀洛月欠。另一方面，為雜 在稍微離開焦點位置之部分則有雖 未到達脆性材料基板5 <彿點但超過熔點之部分存在。 部分如圖2(c)所示表面舍吟1 此 面會熔融，之後因散熱而溫度降低時， 即如圖2⑷所示因凝固而形成熔融痕。 圖3係從脆性材料基板5之表面觀察因消熔加工而產 生缺陷或裂痕之劃線槽6之圖。以在靠槽6不形成溶融 痕之條件、即在以抑制執旦彡鄉+ a & s之條件下使用脈衝雷射光消 溶加工之場合，如圖、儿…1 ^ 圃所不，沿形成之劃線槽6產生 31。 此外在溶融過多之場合，則如圖3⑻所示，從劃線 槽6產生裂痕32。 [聚光徑之控制] 在本發明係使脈衝雷射光之焦點位置不如以往往基板 上面附近而往下方移動，以使脈衝雷射光之在基板上面之 直徑（聚光徑）成為既定值。圖4係顯示本發明之一實施形態 之雷射加工裝置之焦點位置之示意圖。 如圖4所示，習知雷射加工裝置係將脈衝雷射光4 1聚 光成焦點位置位於脆性材料基板5之上面附近。相對於此， 本貫她形態則係與習知裝置相較，使焦點位置43往下方移 動，而調整為脈衝雷射光42之光束直徑〇在脆性材料基板 5之上面成既定之值。另外，亦可取代上述方法，改使脈衝 雷射光之焦點位置位於基板上面上方，而調整為脈衝雷射 光42之光束直徑D在脆性材料基板5之上面成既定之值。 201043383 [雷射加工方法] . 於脆性材料基板5形成劃線槽6之情料，先使脈衝 雷射光聚光而照射於跪性材料基板5之表面(雷射光照射步 驟)。之後，將此脈衝雷射光沿劃線預定線掃猫(雷射光掃晦 步驟）。藉此，沿劃線預定線形成劃線槽6。 在此，本發明之特徵係在對脆性材料基板5進行使用 脈衝雷射光之消溶加工之同時，對脆性材料基板5給予熱 影響以使加工部熔融（以下，將此種加工稱為「熔融消熔」卜 Ο 此種熔融消熔與習知之消熔加工相較能維持端面強度。 以下，顯示根據實驗獲得之可熔融消熔之各條件。 實驗使用之雷射等之條件如下。另外，以下實驗中之 雷射光脈衝寬度在17.5〜22.Ops之範圍。脈衝寬度係依存 於使用之雷射振盪器、重複頻率及輸出而決定者。即，即 使為相同之雷射振盪器，若變更重複頻率或輸出，脈衝寬 度仍會變化。脈衝寬度在以下之實驗雖係17 5〜22 〇ps之 範圍，但如前述，為對脆性材料基板5給予熱影響而為lps ◎ 以上l〇〇〇s以下’較佳為Ins以上1000ns以下之範圍。201043383 6. Technical Field of the Invention The present invention relates to a laser processing method and a laser processing apparatus, and more particularly to irradiating laser light along a predetermined line of a line along a surface of a brittle material substrate to form a scribe groove. Laser processing method and laser processing apparatus for carrying out the method. [Prior Art] As one of methods for dividing a brittle material such as a glass substrate, a semiconductor substrate, or a ceramic substrate, there is a method of processing using laser light. In this method, a scribe groove is formed by first moving the laser light along a predetermined line of the surface of the brittle material substrate while irradiating. Thereafter, the substrate is divided along the scribe groove by applying a pressing force to both sides of the scribe groove on the substrate of the brittle material by the breaking device (see Patent Documents 1 and 2). In the case where the ray groove is formed on the surface of the brittle material substrate by laser light as described above, the laser light to be used is collected by the condensing lens, and the focus position is set near the upper surface of the brittle material substrate. By doing so, ablation due to absorption of light energy occurs at the focus position of the laser beam, and the brittle material near the focus position can be evaporated to the outside. Thereafter, the scribe groove is formed along the predetermined line of the scribe line by moving the focus position while performing the ablation processing. [Problem to be Solved by the Invention] The scribe groove is formed by the conventional melt-eliminating process described in Patent Document 1 by using the conventional method of the present invention. 3 The method of 201043383 causes the occurrence of cracks caused by impact pressure or micro-cracks caused by melting and quenching. Therefore, there is a flaw in the strength of the end face. In addition, the method of forming a j-line groove by the conventional ablation processing described in Patent Document 2 can suppress surface defects such as unevenness, cracks, etc. by reducing the thermal diffusion of the irradiated pulsed laser light to the glass. produce. However, when a scribe groove is formed in a glass substrate which is very thin (e.g., thickness 〇5 or less), such as a display panel, even if the method described in Patent Document 2 is used, sufficient end face strength cannot be obtained. An object of the present invention is to prevent defects or cracks from occurring in a processed portion even when a brittle material substrate such as a glass substrate is subjected to pulsed laser light extinction processing, and the high end surface strength after processing can be maintained. [Means for Solving the Problem] The laser processing method of the first Maoming is to irradiate laser light along a predetermined line of scribe line on the surface of the brittle material substrate to form a scribe groove, which comprises: concentrating the pulsed laser light to the brittle material Laser light irradiation step of the surface of the substrate: a step of sweeping the laser light of the laser light along the predetermined line of the scribe line; the laser intensity of the pulsed laser light, ΚΟχ(8) and above 10 ;; heat input (10) m2 reducing material The value of the line expansion coefficient (10-/K) is 3,000 or more and 1 〇〇ηΛ丨, and the range of 10000 or less is less than 10000; the number of pulses circumscribing the square of the collecting light of the pulsed laser light is 2 pulses or more. This laser processing method is performed at the same time as the laser ray reduction processing, and the substrate of the brittle material irradiated with the laser light is smashed by the heat and the heat is blown. This processing method can suppress the high end strength of the brittle material substrate. The method of the invention is the method of the invention. The laser processing method of the second invention is described in 201043383. The heat input amount (J/cm2) x the linear expansion coefficient of the brittle material (1〇-7/ The value of κ) is more preferably in the range of 3,600 or more and 8800 or less. According to a third aspect of the invention, in the method of the first aspect, the linear expansion coefficient (1〇-7/κ) of the heat input amount (J/cm2) x brittle material is 3800 or more and 7600 or less. In the case of the range, the number of pulses in the square is more preferably 5 pulses or more. Here, when the coefficient of linear expansion is small, it is necessary to increase the amount of heat input in order to melt the processed portion. In view of this, in order to increase the overlap ratio of the pulsed laser light, it is preferable that the number of pulses externally connected to the square of the collecting light path of the pulsed laser light is 5 pulses or more. The laser processing method according to the fourth aspect of the invention is the method of any of the third to third invention, wherein the pulsed laser light has a pulse width of lns or more and 1 〇〇〇 ns or less. In this case, it is easier for the pulsed laser light to impart thermal influence to the irradiated processed portion. Therefore, the processing end face can be melted without increasing the laser intensity of the pulsed laser light. The laser processing method according to the fifth aspect of the invention is directed to any one of the fourth to fourth inventions, wherein the pulsed laser light is ultraviolet laser light having a wavelength of 3 〇〇 nm or less. In this case, the excitation of electrons in the substrate of one photon energy brittle material is started, and the laser light can be efficiently pulsed. Therefore, the processing end face can be melted without increasing the laser intensity of the pulsed laser light. The laser processing apparatus according to the sixth aspect of the invention is characterized in that the laser beam is irradiated along a predetermined line of the surface of the brittle material substrate to form a scribe groove, and is characterized in that: a laser oscillator having a laser beam for transmitting a pulse and a vibration detector to be oscillated Laser pulse laser 5, 201043383 Laser irradiation mechanism of a collecting optical mechanism irradiated by light; a moving mechanism for relatively moving the laser irradiation mechanism along a predetermined line of the surface of the brittle material substrate; the aforementioned pulsed laser light The laser intensity is i 〇χ1〇8 or more 丨〇χ 10 W/cm or less, and the heat input amount (J/cm2) x the linear expansion coefficient (10 /K) of the brittle material is 3,000 or more and less than 1 〇〇〇〇. The range of the number of pulses circumscribing the square of the collecting path of the pulsed laser light is 2 pulses or more. By forming the scribe groove by using such a device, it is possible to suppress defects or cracks in the processed end surface of the brittle material substrate and maintain high end face strength. [Effects of the Invention] In the case of the above-described invention, even when a brittle material substrate such as a glass substrate is subjected to pulsed laser light melting processing, defects or cracks are less likely to occur in the processed portion, and high end surface strength after processing can be maintained. . [Embodiment] [Laser processing apparatus] A laser processing apparatus according to an embodiment of the present invention is shown in Fig. 1. This laser processing apparatus includes a laser oscillator 丨, a mirror mechanism 2, a lens mechanism 3, and an XY stage 4. The laser irradiation mechanism is constituted by the laser oscillator 丨, the mirror mechanism 2, and the lens mechanism 3. The XY stage 4 constitutes a moving mechanism. The laser oscillator 1 is an oscillating pulsed laser light. This laser oscillator is only known as a YAG laser, an IR laser, etc., and is known as a pulsed laser oscillator. Corresponding to the material of the brittle material to be processed, the material of the inverse 5 is appropriate. Further, the pulse width of the pulsed laser light is laser-evaporable and is preferably 1 to 1000 s to 1000 s or less for the brittle material, and more preferably - 〇〇〇 2010 201043383 or less. The mirror mechanism 2 and the lens mechanism 3 form a collecting optical mechanism. The direction in which the pulsed laser light is changed is changed so that the pulsed laser light can be irradiated from the substantially vertical direction to the brittle material substrate 5. As the mirror mechanism 2, one or a plurality of mirrors can be used, and a 稜鏡, a diffraction grating or the like can also be used. The lens mechanism 3 is a person who collects pulsed laser light. In detail, the lens mechanism 3 adjusts the thickness of the brittle material substrate 5, and adjusts the position of the pulsed laser light condensing position, that is, the position in the up and down direction of the focus position. The adjustment of the focus position can be adjusted by changing the lens of the lens mechanism 3, or can be adjusted by changing the position of the lens mechanism 3 in the up and down direction by an actuator (not shown). The XY stage 4 is placed on the platform of the brittle material substrate 5 such as a glass substrate to be separated, and is movable in the χ direction and the γ direction orthogonal to each other. By moving the crucible table 4 at a predetermined speed in the X direction and the ¥ direction, the position of the brittle material substrate 5 placed on the crucible table 4 and the pulsed laser light can be freely changed. Usually, the crucible 4 is moved to move the pulsed laser light along a predetermined line formed by the scribe groove 6 formed on the surface of the brittle material substrate 5. In addition, the moving speed of the χγ stage 4 during processing is controlled by a control unit (not shown), and thus the pulsed laser light is irradiated onto the brittle material substrate 5 at a predetermined overlapping ratio. [Example of Dissolution Processing] Fig. 2 is a view showing an example of a melting process using pulsed laser light. As shown in the figure, the pulsed laser light emitted from the laser oscillator is collected by the lens mechanism 3 near the upper surface of the brittle material substrate 5. When the pulsed laser light is absorbed, as shown in Fig. 2(a), the vicinity of the focal position of the brittle material substrate 5 is heated. 7 201043383 When the temperature near the position of the brittle material substrate 5 is higher than the boiling point of the brittle material substrate 5, how to exceed the boiling point is shown in Fig. 2(b) . On the other hand, in the portion which is slightly away from the focus position, there is a portion which does not reach the brittle material substrate 5 < As shown in Fig. 2(c), the surface of the surface is melted, and then the temperature is lowered by heat dissipation, i.e., as shown in Fig. 2 (4), a melt mark is formed by solidification. Fig. 3 is a view showing the scribe groove 6 in which defects or cracks are generated by the ablation processing from the surface of the brittle material substrate 5. In the case where the solvent is not formed by the groove 6 without the formation of a melting mark, that is, in the case of suppressing the use of pulsed laser light to dissolve the process, the figure is shown in Fig. 1 , 儿The scribe groove 6 produces 31. Further, when there is too much melting, as shown in Fig. 3 (8), cracks 32 are generated from the scribe grooves 6. [Control of the collecting path] In the present invention, the focus position of the pulsed laser light is not moved as it is in the vicinity of the upper surface of the substrate, so that the diameter (light collecting path) of the pulsed laser light on the substrate surface becomes a predetermined value. Fig. 4 is a view showing a focus position of a laser processing apparatus according to an embodiment of the present invention. As shown in Fig. 4, the conventional laser processing apparatus condenses the pulsed laser light 4 1 into a focus position near the upper surface of the brittle material substrate 5. On the other hand, the present embodiment is such that the focus position 43 is moved downward as compared with the conventional device, and the beam diameter 调整 adjusted to the pulsed laser light 42 is set to a predetermined value on the brittle material substrate 5. Alternatively, instead of the above method, the focus position of the pulsed laser light may be placed above the upper surface of the substrate, and the beam diameter D of the pulsed laser light 42 may be adjusted to a predetermined value above the brittle material substrate 5. 201043383 [Laser processing method] The scribed groove 6 is formed on the brittle material substrate 5, and the pulsed laser light is first condensed and irradiated onto the surface of the inert material substrate 5 (laser light irradiation step). Thereafter, the pulsed laser light is swept along the line of the scribe line (the laser bounce step). Thereby, the scribe groove 6 is formed along the predetermined line of the scribe line. Here, the present invention is characterized in that the brittle material substrate 5 is subjected to a dissolution treatment using pulsed laser light, and a heat effect is applied to the brittle material substrate 5 to melt the processed portion (hereinafter, this processing is referred to as "melting elimination". Such a melt-disintegration can maintain the strength of the end face compared with the conventional melt-eliminating process. Hereinafter, the conditions of the melt-meltable melt obtained by the experiment are shown. The conditions of the laser used in the experiment are as follows. The laser light pulse width in the experiment is in the range of 17.5 to 22.Ops. The pulse width depends on the laser oscillator used, the repetition frequency and the output. That is, even if it is the same laser oscillator, if the change is repeated The frequency or output, the pulse width will still change. The pulse width is in the range of 17 5~22 〇ps in the following experiments, but as mentioned above, the thermal influence on the brittle material substrate 5 is lps ◎ above l〇〇〇s The following 'better is in the range of 1000 ns or less above Ins.
雷射：DPSSL(半導體雷射激發固體雷射）、最大輸出7W 波長：266nm 基板1:OA10 (製品名：曰本電氣玻璃社製） 厚度：〇.3mm 線膨脹係數：38(10·7/Κ) 基板2 : D263 (製品名：SCHOTT社製） 厚度：0.3mm 線膨脹係數：73(1(Γ7/Κ) 9 201043383 <關於掃瞒速度> •實驗1 - 針對基板1 ’將基板上面之聚光徑調整為8.47#m，進 订1次掃瞒之結果，能以下述條件進行熔融消熔。 ⑴重複頻率60kHz，掃瞄速度20mm/s〜80mm/s (•i)重複頻率90kHz’掃瞒速度20mm/s〜150mm/s -實驗2- 針對基板1，將基板上面之聚光徑調整為2172μιη， 進仃1次掃瞄之結果，能以下述條件進行熔融消熔。 (I) 重複頻率60kHz，掃瞄速度2〇niIn/s〜80mm/s (II) 重複頻率90kHz，掃瞄速度20mm/s〜70mm/s -實驗3- 針對基板2，將基板上面之聚光徑調整為8 47以m，進 行1人掃陁之結果，能以下述條件進行溶融消炼。 (0重複頻率60kHz，掃瞄速度 (⑴重複頻率90kHz，掃瞄速度60mm/s〜260mm/s -實驗4- 針對基板2，將基板上面之聚光徑調整為2172//m， 進仃1次掃瞄之結果，能以下述條件進行熔融消熔。 ⑴在重複頻率60kHz下，僅能在非常有限之範圍獲得 炼融消溶。 ⑴）重複頻率90kHz，掃瞄速度5〇mm/s〜 80rnm/s <關於雷射強度〉 •實驗5- 60kHz及90kHz下，可進行 針對基板1，於重複頻率 10 201043383 炼融消熔之雷射強度係1.50><1〇8〜8.88父109(\¥/(；1112)。 -實驗6- 針對基板2，於重複頻率60kHz及90kHz下，可進行 溶融消熔之雷射強度係1.50><108〜8.88\109(评/〇1112)。 <關於熱輸入量> -實驗7- 針對基板1，以重複頻率60kHz、聚光徑8.47# m及 21·72 /Z m進行實驗之結果，在熱輸入量為ι841〜 O 1770-3(J/cm2)之範圍可進行熔融消熔。 -實驗8- 針對基板1，以重複頻率90kHz、聚光徑8.47 // m及 21.72^ m進行實驗之結果，在熱輸入量為115.1〜1180.2 (J/cm2)之範圍可進行炫融消熔。 -實驗9- 針對基板2，以重複頻率60kHz、聚光徑8.47// m及 21.72/z m進行實驗之結果，在熱輸入量為460.4〜1180.2 〇 (J/cm2)之範圍可進行熔融消熔。 ••實驗1 0- 針對基板2，以重複頻率90kHz、聚光徑8.47# m及 21.72// m進行實驗之結果，在熱輪入量為57.5〜393.4 (J/cm2)之範圍可進行熔融消熔。 [定義] 此處’ 「雷射強度」及「熱輸入量」係以下述式（1)及 式（2)定義者。 11 201043383 (式i) 寬度（s)x光束 面積 雷射強度（w/cm2)=脈衝能量（j)/(脈衝 (cm2)) (式2) 熱輸入量（J/cm2)=脈衝能量（J)/(正方形内之脈衝數時 接於聚光徑之正方形之面積（cm2)) 另外，「正方形内之脈衝數」係以下述式（3)定義者（參 照圖5) 。 ^ (式3) 正方形内之脈衝數=聚光徑（mm)/脈衝間隔（mm) =聚光徑（mm)/(掃瞄速度（mm/s)/重複頻率（Hz)) [熔融消熔之總結] 由以上之實驗結果，可進行熔融消熔之條件如下。 雷射強度：1.0父108〜1.(^101()()^/(；1112)—基板1'2共通 熱輸入量：基板 1-100(与 11 5.1)〜2000〇 1170.3)(J/cm2) iJ 基板 2—50(与 57.5)〜1200(与 11 80.2)(J/cm2) 正方形内之脈衝數：基板1 — 5.0脈衝以上 基板2 — 2 · 0脈衝以上 此外，得知線膨脹係數較大之玻璃會以較低之熱輸入熔 融。此外，得知由於基板2之線膨脹係數73(1 (Τ7/Κ)為基板 1之線膨脹係數38(1 0·7/Κ)之2倍程度，故可熔融消熔之熱 輸入量及脈衝數亦為基板1之1/2程度。 12 201043383 在此，若求取各基板之「熱輸入量（J/cm2)x線膨脹係數 (10_7/Κ)」之值，則得如下結果。 基板 1 : 3800〜76000 基板 2 : 3650〜87600 由以上’若將可熔融消熔之條件一般化，則得如下結果。 (a) 雷射強度：ι.0χ1〇8〜1 〇xl〇10(w/cm2) (b) 熱輸入量（J/cm2)x線膨脹係數（1〇_7/κ) : 3〇〇〇以上 10000以下Laser: DPSSL (semiconductor laser excited solid laser), maximum output 7W Wavelength: 266nm Substrate 1: OA10 (product name: manufactured by Sakamoto Electric Glass Co., Ltd.) Thickness: 〇.3mm Linear expansion coefficient: 38 (10·7/ Κ) Substrate 2: D263 (product name: manufactured by SCHOTT) Thickness: 0.3 mm Linear expansion coefficient: 73 (1 (Γ7/Κ) 9 201043383 <About broom speed> • Experiment 1 - Substrate for substrate 1 ' The above-mentioned condensing path is adjusted to 8.47#m, and the result of one broom can be melted and melted under the following conditions: (1) Repeating frequency of 60 kHz, scanning speed of 20 mm/s to 80 mm/s (•i) repetition frequency 90 kHz 'broom speed 20 mm/s to 150 mm/s - Experiment 2 - For the substrate 1, the light collecting path on the substrate was adjusted to 2172 μm, and as a result of one scanning, melting and melting were performed under the following conditions. I) Repeat frequency 60kHz, scan speed 2〇niIn/s~80mm/s (II) Repeat frequency 90kHz, scan speed 20mm/s~70mm/s - Experiment 3 - For substrate 2, the light collecting path above the substrate Adjusted to 8 47 in m, the result of one person broom can be melted and refined under the following conditions: (0 repetition frequency 60 kHz, scanning speed ((1) The complex frequency is 90 kHz, and the scanning speed is 60 mm/s to 260 mm/s. - Experiment 4: For the substrate 2, the light collecting path on the substrate is adjusted to 2172/m, and the result of one scan is performed under the following conditions. Melt melting and melting. (1) At a repetition frequency of 60 kHz, refining and dissolving can only be obtained in a very limited range. (1) Repeat frequency 90 kHz, scanning speed 5 〇 mm/s to 80 rnm/s <About laser intensity> • Experiment 5-60 kHz and 90 kHz, the laser intensity for the substrate 1 at the repetition frequency 10 201043383 is 1.50><1〇8~8.88 parent 109(\¥/(;1112). 6- For the substrate 2, at a repetition frequency of 60 kHz and 90 kHz, the laser intensity of melting and melting can be 1.50><108~8.88\109 (evaluation / 〇1112). <About heat input amount> Experiment 7 - For the substrate 1, the results of the experiment were carried out at a repetition frequency of 60 kHz, a light collecting path of 8.47 #m and 21·72 /Z m, and the heat input amount was in the range of ι 841 to O 1770-3 (J/cm 2 ). Melting and melting--Experiment 8 - For the substrate 1, the experiment was carried out with a repetition frequency of 90 kHz, a light collecting path of 8.47 // m and 21.72 ^ m, and the heat input amount was 115.1 to 11 The range of 80.2 (J/cm2) can be melted and melted. - Experiment 9 - For the substrate 2, the results of the experiment were carried out at a repetition frequency of 60 kHz, a light collecting diameter of 8.47 / / m and 21.72 / zm, and melting de-melting was possible in a range of a heat input amount of 460.4 to 1180.2 〇 (J/cm 2 ). . ••Experiment 1 0—For the substrate 2, the results of experiments with a repetition rate of 90 kHz, a condensing diameter of 8.47 # m and 21.72// m were performed in the range of 57.5 to 393.4 (J/cm 2 ). Defusion. [Definition] Here, "Laser intensity" and "heat input amount" are defined by the following formulas (1) and (2). 11 201043383 (Formula i) Width (s) x Beam area Laser intensity (w/cm2) = Pulse energy (j) / (Pulse (cm2)) (Formula 2) Heat input (J/cm2) = pulse energy ( J) / (the area of the square in which the number of pulses in the square is connected to the square of the light collecting path (cm2)) The "number of pulses in the square" is defined by the following formula (3) (see Fig. 5). ^ (Formula 3) Number of pulses in a square = Convergence diameter (mm) / Pulse interval (mm) = Convergence diameter (mm) / (Scanning speed (mm/s) / Repetition frequency (Hz)) [Melt elimination Summary of melting] From the above experimental results, the conditions for melting and melting can be as follows. Laser intensity: 1.0 parent 108~1. (^101()()^/(;1112)—substrate 1'2 common heat input: substrate 1-100 (with 11 5.1)~2000〇1170.3) (J/ Cm2) iJ substrate 2-50 (and 57.5) to 1200 (and 11 80.2) (J/cm2) Number of pulses in the square: Substrate 1 - 5.0 pulses or more Substrate 2 - 2 · 0 pulses or more In addition, the coefficient of linear expansion is known Larger glass will melt with lower heat input. Further, it is found that since the linear expansion coefficient 73 (1 (Τ7/Κ) of the substrate 2 is twice the linear expansion coefficient 38 (1 0·7/Κ) of the substrate 1, the heat input amount which can be melted and melted and The number of pulses is also about 1/2 of the substrate 1. 12 201043383 Here, when the value of "heat input amount (J/cm2) x linear expansion coefficient (10_7/Κ)" of each substrate is obtained, the following results are obtained. Substrate 1 : 3800 to 7600 Substrate 2 : 3650 to 87600 From the above, if the conditions for melting and melting are generalized, the following results are obtained: (a) Laser intensity: ι.0χ1〇8~1 〇xl〇10( w/cm2) (b) Heat input amount (J/cm2) x-ray expansion coefficient (1〇_7/κ) : 3〇〇〇 or more and 10000 or less
(c)正方形内之脈衝數 5脈衝以上（線膨脹係數小時） 在此，於圖6顯不以熔融消熔獲得之劃線槽6之狀熊。 如此圖所示，在利用熔融消熔之加卫下，+會產生缺^及 裂痕’可以高精度形成劃線槽6。 山 卜圖7係比較因溶融消熔而端面被熔融之場合，與 端面未熔融之場合之端面強度之圖。於此圖中，資料Ρ〇(_) ^習知藉由端面未炫融之消熔形成劃線槽，並對基板作用 :荷重，對不同荷重描繪端面破損機率者。此外，資料们⑷ 係藉由將基板i熔融消熔形成劃線槽之場合、資料叫♦) :藉由將基板2熔融消熔形成劃線槽之場合之分別與資料 P0相同之破損率資料。 劃線槽之場合，在荷重 在以溶融消溶形成劃線 之間破損，可知端面強 由此圖可知，在以習知消熔形成 到達lOOMPa之前便已破損。反之， 槽之場合，在荷重為250〜425MPa 度遠比習知加工方法高。 由於調整脈衝雷 如上述，利用本實施形態之加工方法 13 201043383 射光之雷射強度、熱輸入量以熔融消熔形成劃線槽，故可 抑制基板之加工端面之缺陷或裂痕，維持高端面強度。 [其他實施形態] 本發明並不限定於如以上之實施形態，在不脫離本發明 之範圍内可有各種變形或修正。 作為對象之基板並不限於前述基板丨及2，可對各種玻 璃基板或其他脆性材料基板適用本發明。 【圖式簡單說明】 圖1係顯示利用本發明之一實施形態之雷射加工裝置 之構成之示意圖。 、 圖2係顯示利用脈衝雷射光之消熔加工之一 圖3係從脆性材料基板之表面觀察因消熔办 工之一例之圖。 缺陷或裂痕之劃線槽之圖。 u工而產生(c) Number of pulses in a square 5 pulses or more (hours of linear expansion coefficient) Here, in Fig. 6, a bear of a scribe groove 6 obtained by melt melting is shown. As shown in the figure, the scribe groove 6 can be formed with high precision by the occurrence of defects and cracks by the use of the melt-elimination. Fig. 7 is a graph showing the strength of the end face in the case where the end face is melted due to melting and melting, and the end face strength in the case where the end face is not melted. In this figure, the data Ρ〇(_) ^ conventionally forms a scribe groove by the melting of the end face without thawing, and acts on the substrate: load, and the probability of damage of the end face is drawn for different loads. In addition, the data (4) is a case where the substrate i is melted and melted to form a scribe groove, and the data is called ♦): the damage rate data which is the same as the data P0 when the substrate 2 is melted and melted to form a scribe groove . In the case of the scribed groove, the load was broken between the scribe lines formed by the melt dissolving, and it was found that the end face was strong. As can be seen from the figure, it was broken before the conventional de-melting formation reached 100 MPa. On the other hand, in the case of a groove, the load is 250 to 425 MPa, which is much higher than the conventional processing method. Since the adjustment pulse is as described above, the laser beam intensity and the heat input amount of the present embodiment are melted and melted to form the scribe groove by the processing method 13 201043383. Therefore, the defect or crack of the processed end surface of the substrate can be suppressed, and the high end surface strength can be maintained. . [Other Embodiments] The present invention is not limited to the above embodiments, and various modifications and changes can be made without departing from the scope of the invention. The substrate to be used is not limited to the above-described substrates 2 and 2, and the present invention can be applied to various glass substrates or other brittle material substrates. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the configuration of a laser processing apparatus according to an embodiment of the present invention. Fig. 2 shows one of the ablation processing using pulsed laser light. Fig. 3 is a view showing an example of a sintering process from the surface of a brittle material substrate. A diagram of a scribed groove of a defect or crack. u work
之示意圖。 内之脈衝數」之圖。 之表面觀察以利用本發明之一 工玻璃基板之場合之劃線槽之 工方法形成劃線槽之場合與 工方法形成劃線槽之場 圖7係比較以以往之加工方法 利用本發明之一實施形態之雷射加 合之端面強度之圖。 【主要元件符號說明】 雷射振盪器 14 201043383 2 反射鏡機構 3 透鏡機構 4 XY載台 5 脆性材料基板 6 劃線槽Schematic diagram. The graph of the number of pulses inside. The surface is observed by the method of the scribe groove in the case of using the glass substrate of the present invention. The scribe groove is formed in the same manner as the method of forming the scribe groove. FIG. 7 is a comparison with the conventional processing method. A diagram of the strength of the end face of the laser addition of the embodiment. [Main component symbol description] Laser oscillator 14 201043383 2 Mirror mechanism 3 Lens mechanism 4 XY stage 5 Brittle material substrate 6 Slot groove
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