201028789 六、發明說明： I發明所屬之技術領域】 本發明有關於使用於半導體裝置製造等的光罩之製造 方法以及光罩。 【先前技術】 使用於半導體裝置製造等的光罩，例如在二元式罩幕 的情況’為在透明基板上使遮光膜形成圖案狀的光罩。如 上所述的光罩是經由準備在透明基板上形成遮光膜的光罩 空白片的步驟；將形成於上述遮光膜上的光阻膜圓案化以 形成光阻圖案的步驟；以上述光阻圖案作為罩幕而蝕刻上 述遮光膜，以形成遮光膜圖案的步驟來製造。 因此，在上述的光罩，其製造過程中，無法在遮光膜 圖案避免產生缺陷。並且’在此’由膜圖案的剩餘、異物 附著造成的缺陷稱為黑缺陷，雨膜圖案不足造成的缺陷稱 為白缺陷。 ----外叫本叩贼陌檢·置，存名 缺陷、黑缺陷的情況’通常可考慮使用例 聚焦離子束（FIB)法孳，祕> ^ 末⑴法等，進订局部性的膜修正 缺陷的部分，1 在 的。另一方面：膜，適當的修正是可 的另方面，黑缺陷的修正方法， 以飛濺去险褲&时i 万法 般為利用ΠΒ、雷 Μ观機去除遮光膜成份的方法。 田 I發明内容】201028789 VI. Description of the Invention: Field of the Invention The present invention relates to a method of manufacturing a photomask used in the manufacture of a semiconductor device, and a photomask. [Prior Art] In the case of a photomask for manufacturing a semiconductor device or the like, for example, in the case of a binary mask, a photomask in which a light shielding film is patterned on a transparent substrate is used. The photomask as described above is a step of preparing a mask blank by forming a light shielding film on the transparent substrate; a step of rounding the photoresist film formed on the light shielding film to form a photoresist pattern; The pattern is etched as a mask to etch the above-mentioned light-shielding film to form a light-shielding film pattern. Therefore, in the above-described photomask, in the manufacturing process, it is impossible to avoid defects in the light-shielding film pattern. Further, the defect caused by the remaining of the film pattern and the adhesion of the foreign matter is referred to as a black defect, and the defect caused by the insufficient rain film pattern is referred to as a white defect. ---- Outside the name of the thief, the thief is undetected, the name of the defect, the black defect. 'Generally consider the use of the focused ion beam (FIB) method, secret> ^ end (1) method, etc., to customize the locality The part of the membrane correction defect, 1 in. On the other hand: the film, the appropriate correction is another aspect, and the black defect correction method is a method of removing the light-shielding film component by using the smashing and smashing machine. Tian I invention content]
而，習知一 各的黑缺陷修 正方法可修 正微小的黑缺 201028789 陷區域，對於大的黑缺陷區域的情況，以習知的黑缺陷修 正方法來修正非常地費時’而沒有效率。再者，習知一般 的黑缺陷修正方法，飛濺的異物容易附著在缺陷周圍的正 常部分（透光部），有再度修正的必要。 有鑑於上述習知的情事，本發明的第一目的在於，提 供一種具有缺陷修正步驟的光罩之製造方法及光罩，該缺 陷修正步驟即使大的黑缺陷也能夠有效率地且精度良好地 ❹修正。 本發明的第二目的在於’提供一種光罩之製造方法及 光罩’可定量地評價在光罩的缺陷修正階段所產生的對準 誤差。 為了解決上述課題’本發明具有下列構成。 (構成1) 一種光罩之製造方法，包括準備在透明基板上形成有 遮光膜的光罩空白片的步驟；圖案化形成於上述遮光膜上 的光阻膜以形成光阻圖案的步驟；將上述光阻画案作為罩 幕而姓刻上述遮光膜，以形成遮光膜圖案的步驟；以及進 行形成的遮光膜圖案的缺掐檢查，在剩餘物造成的黑缺陷 存在時修正該缺陷部分的步驟，其特徵在於：修正上述缺 卩刀的步驟包括：指定上述缺陷部分的步驟；在上述光 罩上形成另一個光阻膜的步驟；在包含上述缺陷部分的既 疋區域，根據基於上述指定的缺陷部分的位置與形狀製作 的描繪資料進行周案描繪，描繪後，顯影以形成修正用光 阻圖案的步驟；以上述修正用光胆圖案作為罩幕而施以蝕 201028789 ^以去除上述缺陷部分的剩餘物的㈣’上述光阻面案 標記，上述修正用光阻圖案包含第二標記.，並且， 上述修正用光阻圈案的形成後，或者去除上述缺陷部分的 剩餘物的步驟後的至少任—者具有進行檢查的㈣，進行 &檢一的步驟包括’上述修正用光阻圖案的形成後進行檢 查的情況為’測定對應於上述第一標記的遮光膜圖案的邊 緣與上述修正用光阻圖案之中的第二襟記的邊緣的距離， 去除上述缺陷部分的剩餘物的步驟後進行檢查的情況為， 測定對應於上述第-標記的遮光膜圖案的邊緣與對應於上 述第二標記的遮光膜圖案的邊緣的距離，再檢查上述距離 是否在既定的範圍内的步驟。 (構成2) 構成1所述之光罩之製造方法，其中在實施將上述第 一標記與實施上述缺陷部分修正的步驟的情況所形成的上 述第二標記，在形成於上述透明基板上時，為將—個標記 的外形與另一個標記的外形的内部所含的形狀的組合。 (構成3) 構成2所述之光罩之製造方法，其中上述第—標記與 上述第二標記在一方向以及與其垂直的方向均具有對稱形 狀的圖案。 (構成4) 構成2或3所述之光罩之製造方法，其中上迷第_ 乐—標 記的外形上述第二標記的外形為相似形狀。 (構成5) 201028789 構成.2-4任一者所述之光罩之製造方法，其中上述第 一標記與上述第二標記均包含矩形的圖案。 (構成6) 構成14任一者所述之光罩之製造方法，其中上述檢 查步驟是在上述光罩照射光，再藉由接受其透過的光來進 行。 (構成7) ❹ 構成1〜5任一者所述之光罩之製造方法，其中上述檢 查步驟是在上述光罩照射光，再藉由接受其反射的光來進 行0 C構成8) 一種光罩，為在透明基板上具有遮光膜阖案的光罩， 藉由使用包含㈣步㈣圖案化步称在形成於透明基板上 的遽光膜形成圖案所製造的光罩之中，其特徵在於：該光 罩具亦藉由包含上述描繪步驟的囷案化，而形成於遮光膜 的第標d ’ it打形成於該光罩上的遮光膜圖案的缺陷檢 *剩餘物造成的黑缺陷存在時，藉由包含上述描緣步 驟的圖案化而修正該缺陷部分，上述第一標記與上述第二 •的Μ係之中’―個標記的外形為另—個標記的外形的 内部所含的矩形的圏案，使得測定該第—標記與藉由包含 -上述缺陷部分的帛2次的描緣步驟的圖案化以 光膜或光阻膜形成的第二標記的距離再藉由檢查上 :距離是否在既定範圍内之帛2次描緣的對準誤差的評價 成為可能 201028789 根據本發明之光罩之製造方法，進行形成於光罩 遮光膜圖案的缺陷檢查，當存在剩餘物造成的黑缺陷時， 藉由包含描繪步驟的圓案化以修正該缺陷部分，所以即使 是大的黑缺陷，也錢有效率地修正。再者，進行黑缺陷 的修正的情況，雖錢行用以形成遮光膜圏案的描繪與用 以修正黑缺陷的摇缘的2次描繪，然而由於本發明包含定 量地檢查2次描繪的對準誤差的檢查步驟，所以可評價在 光罩的黑缺陷的修正階段是否產生對準誤差以及在產生 的清況T定量地檢查對準誤差的大小。亦即分別在用以 形成第1-人的遮光膜圖案的描繪時製作特定的標記（第一標 記）以及在用以修正第2次的黑缺陷的描繪時製作特定的標 記（第二標記），並且藉由利用這些標記的例如邊緣間的距 離’評價2次的描繪的對準誤差，可定量地檢查黑缺陷的 修正階段f際產生的對準㈣。再者，纟罩幕製造途中， 評價對準誤差，所以能夠視需要在此階段進行可能的修 正（修正流程的重做），即使大的黑缺陷也可有效率地且精 度良好地修正，罩幕生產上的優點多。 再者’藉由本發明的罩幕’藉由與遮光膜周案的形成 同時形成的特定的標記（第一標記），進行形成於光罩上的 遮光膜圖案的缺陷檢查，當剩餘物造成的黑缺陷存在時， 藉由含有描綠步驟的圖案化修正該缺陷部分的情況可定 量地檢查黑缺陷的修正階段實際產生的對準誤差的大小。 亦即，上述第—標記與用以修正黑缺陷的描繪時形成於遮 光膜的特定標記（第二標記）的關係之中，為一個標記的外 201028789 形與另-個標記的外形的内部所含的矩形的圖#，且藉由 評價這些標記的例如邊緣間的距離，可定量地檢查在黑缺 陷的修正階段實際產生的對準誤差。其的 製造途中，可評價對準誤差，所以能夠視需要在此== 夠進行可能的修正（修正過程的重做等）。 I货施方式】 φ 以下，根據圖式說明實施本發明的最佳形態。 第1圖為用以說明根據本發明光罩之製造方法妁實施 形態依步驟順序的典型上視圖。 使用的遮罩空白片為在透明基板1上形成以鉻為主成 份的遮光膜2,且在其上塗佈光阻，再形成光阻膜。首先， 對於光阻膜進行既定的周案的描繪。描飧通常使用電子線 或光（短波長光）居多，而在本實施形態是使用電子線。因 此’本實施形態是使用正型光阻作為上述光阻。其攻，對 ® 於上述光阻膜描繪既定的裝置囷案，再藉由於描繪後進行 顯影，以形成光阻圖案3 (參照第1 (a)圓）。並且，在上述 裝置圖案描搶的同時指繪特定的標記圖案。此特定的標吃 圖案是用來評價在後續進行黑缺陷修正情況的描緣時的對 準誤差’例如描繪於形成基板上的裝置圖案的區域的外側 的區域。因此，上述光阻圖案包含上述特定的標記圖案的 描繪、以顯影形成的標記（第一標記）。第一標記詳如後述。 其次，以上述光阻圖案3作為蝕刻罩幕而蝕刻遮光琪2 以形成遮光膜圖案（參照第1(b)圖）。由於使用以鉻為主成 201028789 份的遮光膜2’所以蚀刻的方法可以是乾蚀刻或溼钮刻任一 者，然而本實施形態是利用溼蝕刻。 如此可在透明基&丨1得到形成有既定遮光膜圓案 的光罩（參照第1(c)圖）。 針對製造的上述光罩，使用缺陷檢查裝置的缺陷檢查 的結果，在光罩的一部分存在如帛1(c)圖所示包含小區域 與大區域的黑缺陷6。如上述第Ka)、㈤圖所示，此為例 如覆蓋光阻圖案3的開口部的異物5,而妨礙開口部的遮光 膜的蝕刻所產生的缺陷。 其欠，根據缺陷檢查之特定的黑缺陷6的位置資訊與 形狀資訊製作上述黑缺陷6或者包含此之既定區域内的正 常描繪圖案資料。 其次，在上述光罩上的例如全面地形成與上述相同的 正变光阻膜，然後將上述製作的包含描繪圖案資料的必要 資訊輸人描繪機，再根據上述描繪㈣資料於上述黑缺陷6 或包含此的既定區域上進行圖案描繪。接著，描繪後顯 影而形成光阻圖案4。藉此，去除黑缺陷6區域上的光阻膜， 而露出遮光膜2(參照第i⑷圖）。並且，在此㈣步驟定 位的同時，在光罩的角落等使用預先設置的對準標記。再 者，此第2次缺陷修正用的描繪時同時描繪特定的標記圖 案。此特定的標記圖案是藉由與上述第一標記組合，而評 價此第2次的描緣時的對準誤差的圖案，與上述第一標記 的if況同樣地，在形成例如基板上的裝置圖案的區域的外 侧區域描緣，使得與上述第一標記成為既定的位置關係（距 201028789 離關係）。因此，上述光阻圖案4包含藉由上述第2次的描 繪、顯影所形成的標記（第二標記第二標記詳如後述。 其-人，以上述光阻圖案4作為軍幕，而進行姓刻。姓 刻方法，鉻遮光膜的情況’例如乾蝕刻或溼蝕刻任一者皆 可，然而本實施形態是利用特別是可進行局部蝕刻的溼蝕 刻0 藉由上述蝕刻，可去除黑缺陷6區域上不需要妁遮光 φ 膜2 ’而露出透明基板1(參照第1(e)圖）。 接著，藉由去除殘存的光阻圖案，可得到施以上述黑 缺m修正的光罩（參照第1(f)躅）。 其次，參照第2圖，針對進行修正上述黑缺陷用的第2 次指繪時的對準誤差的檢查方法加以說明。第2圖為用以 說明上述實施形態的檢查方法的特定標記面案形成部分的 步驟順序的剖面圈（左半邊）以及上視圖（右半邊）。 形成上述遮光膜圖案（罩幕圖案）用的光阻圖案3中所 ® 含有的第一標記’在本實施形態是使用4種類的圖案心B、 C、D為1套（參照第2(a)圖）。A、B.、C、D任一者皆為矩形 的圖案’ A為中央具有小的笼形的開孔（無光阻）部分的光阻 圖案’B為中央具有小的矩形的光阻圖案，c為具有將既定 寬度的開孔部分成為矩形的圖案，D為在中央具有大的矩形 的開孔部分的圖案。 以下的步驟與上述第1圖的步驟完全相同。亦即，將 含有如上所述的第一標記的光阻圖案3作為蝕刻罩幕，而 蝕刻遮光膜2 (參照第2(b)圖），去除殘存的光阻圖案，可 11 201028789 得到形成有相當於上述第一標記A、B、C、D的遮光膜圖案 的光罩（參照第2(c)圖）。 其次’藉由得到的光罩的圖案檢查發現需要修正的黑 、陷的障況，在上述先罩上形成另一個光阻膜，再根據對 應上述黑缺陷的描繪圖案資料進行圖案描繪，描繪後顯影 而形成光阻圖案4 (參照第2(d)圖）。 本實施形態之中，上述光阻圖案4所含的第二標記， 係分別對應上述第一標記A ' B、c、D，而使用4種類的圖 案a、b、c、d作為1套（參照第2(d)圖）ea、b、c、d任 一者皆為矩形的圖案，a為比第一標記A大的矩形的圖案， b為比第一標記β大的矩形的圖案，c為比第一標記c小 的矩形的圖案，d為比第一標記d小的矩形的囷案。 如上所述本實施形態是將第一標記A舆第二標記a、第 一標記B與第二標記b、第一標記c與第二標記c、第一標 記D與第二標記d分別組合而使用。這些第一標記與第二 標記形成於透明基板上時，為其中一個標記的外形為另一 個福記的外形的内部所含的形狀。再者，這些第—標記與 第二標記具有在一方向以及與此垂直的方向均具有對稱的 形狀的圖案。再者，這些第一標記的外形與第二標記的外 形為矩形的相似形，並且，這些標記的圖案資料包含具有 共通的重心的矩形的圖案。 因此’本實施形態之中，第一標記a、b、c、d舆第二 標記a、b、c、d形成於透明基板上時，各別的組合之中， 是在透明基板表面的上視的一方向上，以第—^ 矛 棵記的邊 201028789 緣第#記邊緣、第二標記邊緣、第一標記的邊緣的順 序列（標β己C、c、D、d的情況），或者第二標記的邊緣、 第"""標記邊缓、楚__ ΛΛ 第標記邊緣 '第二標記的邊緣的順序配 列（標記A、a、B、b的情況）（參照第2(d)圖）。 、在此，進仃上述黑缺陷的情況，藉由第2次的描繪形 成光P H案4的形成後（參照第2⑷圖），進行檢查的情況， 測定相當於第-標記的膜圖案的邊緣與在上述光阻圖案^ ❹之中的第二標記的邊緣的距離，再藉由檢查此距離是否在 既定範圍内，而評價第2次的描缚時的對準誤差。總之， 本實施形態的情況’如第3圖所示，4種類的圖案的任一種 之中，在例如X方向測定相當於第一標記的A的遮光膜之 圖案的邊緣與光阻圖案4之中第二標記的a的邊緣的距離 ^與in’再似〇ηΑ-ΏΑ)/2評價對準誤差的大小，並檢查此值 是否在預先設定的既定範圍（容許範圍）内。第一標記的β . 與第二標記的b、第一標記的C與第二標記的c、第-標記 的D與第二標記的4各別的組合也同樣地進行檢查。再者， 針對Y方向的對準誤差可同樣地進行評價。在第2⑷圖以 及第3圖之中’標不〇記號的位置為本實施形態較佳的測 又仅置。 如上所述，在用以進行黑缺陷修正的第2次的描繪所 形成的光阻圓案4形成後，進行檢查，當對準誤差的大小 超過容許範圍時，能夠去除上述光阻圖案4，藉由再一次光 阻膜形成、進行描繪（光阻圖案的重做），而進行修正。 如上所述’視需要在上述光阻圖案4的形成後進行檢 13 201028789 查後·’將含有上述第二標記的光阻圖案4作為蝕刻罩幕， 蝕刻遮光膜2(參照第2(e)囷），去除殘存的光阻圖案，可 形成相當於第一標記a、b、c、d與第二標記a、b、c、d(的 組合）的膜圖案（參照第2(f)囷）。 在此最終步驟後，進行對準誤差的檢查的情況，如第3 圖所示，例如在X方向，測定相當於第一標記的c的遮光 膜圖案的邊緣與相當於第二標記的c的遮光膜圖案的邊緣 的距離nk與nc，再以（ΙΠ(；_ηε)/2評價對準誤差的大小，並檢 查此值疋否在預先設定的既定範圍（容許範圍）内。再者， 針對Υ方向的對準誤差可同樣地進行評價。在第2(f)圖， 標示〇記號的位置為本實施形態較佳的測定位置。並且， 在階段，也有因標記的圖案而消失的情況（例如第一標記 A、第一標記b、第二標記d)，然雨在上述光阻圖案4的形 成後的階段’藉由第一標記與第二標記的組合可進行檢查。 排除製造流程的CD(關鍵尺寸）誤差（圖案的縮小）的因 素’為了純粹地僅評價對準誤差的因素，可檢出各別在例 _ 如X轴、Y軸的方向的對準誤差的有無的第一標記與第二標 記’較佳在一方向以及與其垂直的方向均具有對稱形狀的 周案（例如左右對稱 '上下對稱再者，第一標記與第二 標記較佳配置成’這些的邊緣間的距離可利用丨次的測定 而精度良好地測定的位置關係。再者，第一標記的外形與 第一標記的外形較佳為相似形狀’使得第一標記與第二f 記的邊緣間的距離的測定變得容易。 再者’如本實施形態所述’檢查用的圖案，將複數個 14 201028789 圖案成套使用也適合。特別是在藉由第2次描繪的光阻圖 案4形成後的階段進行檢查的情況，是在基板上承載著光 阻阖案的狀態下進行檢查，所以光阻的透過率也會影響。 再者’反射光與透過光的任一者的測定方面，藉由是否測 定精度較高（是否藉由任一情況可得到較高的對比），由於 在測定時可選擇測定容易的標記的圖案，所以較佳。視情 況’可在反射光、透過光的兩者進行檢查。 φ 總之，如本實施形態，在每個製品中，可將複數個檢 查用標記的圓案（第一標記與第二標記的組合）成套使用， 或者在每個製品選擇1種類至_2種類左右使用也可以。 並且，在以上的實施形態使用的第一標記A、E、C、D 以及第二標記a、b、c、d僅是顯示代表性的例子，為了達 成本發明的效果，標記的形狀、大小、第一標記與第二標 記的組合、其位置關係等，當然沒有限定上述實施形態的 必要。 參#由上述實施形態說明’根據本發明，可得到以下所 述的效果。 U)進行形成於光罩上的遮光膜圖案的缺陷檢查，當剩 餘物造成的黑缺陷存在時，藉由含有描繪步驟的面案化修 正該缺陷部分，所以即使是大的黑缺陷，也能夠有效率地 修正。 (2)進行黑缺陷修正的情況，雖然是進行用以形成遮光 膜圖案的描繪與修正黑缺陷的描繪的2次推繪，然而本發 明可在光罩的黑缺陷的修正階段定量地檢查實際產生的對 15 201028789 準誤差的大小。亦即，分別製作用以形成第1次的遮光膜 圖案的描繪時特定的標記（第一標記）、用以修正第2次的 黑缺陷的描繪時特定的標記（第二標記），再藉由以這些標 記的例如邊緣間的距離，來評價第2次描繪的對準誤差， 而可定量地檢查在黑缺陷的修正階段實際產生的對準誤 差。 (3)再者，由於在罩幕的製造途中，可評價對準誤差， 所以視需要在此階段能夠進行可能的修正（修正過程的重 做等）’即使是大的黑缺陷，也可以有效率地、且精度良好⑩ 地修正，罩幕生產上的優點多。 以上，參照較佳的實施形態說明本發明，然而本發明 不限定於上述實施形態。在記載於申請專利範圍的本發明 的精神、範1内，此技術領域之人士可理解而將本發明作 各種變更。 I圖式簡單說明】 笛 / 第1(a)〜（f)圖為用以說明根據本發明光罩之製造方法 的實施形態依步驟順序的模式上視圖。 第2(a)〜（f)圖為用以說明上述實施形態之對準誤差的 檢查方法的特定標記圖案形成部分的步驟順序的剖面圖以 及上視周。 第3圖為用以說明上述檢查方法之特定標記圓案 部分的上視圓。 16 201028789 【主要元件符號說明】 1 透明基板 2 遮光膜 3 光阻圖案 4 光阻圖案 5 異物 6 黑缺陷However, the conventional black defect correction method can correct a small black defect 201028789. In the case of a large black defect area, it is very time-consuming to correct by the conventional black defect correction method. Further, in the conventional black defect correction method, the splashed foreign matter tends to adhere to the normal portion (light transmitting portion) around the defect, and it is necessary to correct it again. In view of the above-described circumstances, it is a first object of the present invention to provide a method of manufacturing a mask having a defect correcting step and a mask which can efficiently and accurately perform even large black defects. ❹Fixed. A second object of the present invention is to provide a method of manufacturing a photomask and a photomask, which can quantitatively evaluate an alignment error generated in a defect correction stage of a photomask. In order to solve the above problems, the present invention has the following constitution. (Configuration 1) A method of manufacturing a photomask comprising the steps of preparing a mask blank having a light-shielding film formed on a transparent substrate; and patterning a photoresist film formed on the light-shielding film to form a photoresist pattern; The step of forming the light-shielding film by using the above-mentioned photoresist pattern as a mask to form a light-shielding film; and performing the defect inspection of the formed light-shielding film pattern, and correcting the defective portion in the presence of black defects caused by the residue The method of modifying the boring tool includes: a step of designating the defective portion; a step of forming another photoresist film on the reticle; and an erbium region including the defect portion, according to the designation based on the Depicting the position and shape of the defect portion, depicting the data, drawing, and then developing to form a correction photoresist pattern; applying the above-mentioned correction light pattern as a mask to etch 201028789 ^ to remove the defect portion (4) the above-mentioned photoresist mask mark, the correction resist pattern includes a second mark, and the above correction After the formation of the barrier pattern, or at least any one of the steps of removing the residue of the defective portion, the step of performing the inspection includes the step of performing the inspection of the photoresist pattern after the correction. In the case where the distance between the edge of the light-shielding film pattern corresponding to the first mark and the edge of the second scratch of the correction resist pattern is measured, and the remaining portion of the defective portion is removed, the inspection is performed. And measuring the distance between the edge of the light-shielding film pattern corresponding to the first mark and the edge of the light-shielding film pattern corresponding to the second mark, and checking whether the distance is within a predetermined range. (Configuration 2) The method of manufacturing a photomask according to the first aspect, wherein the second mark formed by performing the step of correcting the first mark and performing the defect portion is formed on the transparent substrate A combination of the shape of the inside of one mark and the shape of the inside of the shape of another mark. (Aspect 3) The method of manufacturing a photomask according to the second aspect, wherein the first mark and the second mark have a symmetrical pattern in one direction and a direction perpendicular thereto. (Configuration 4) The manufacturing method of the reticle according to 2 or 3, wherein the shape of the second mark of the first _ music mark is a similar shape. (Claim 5) The method of manufacturing a photomask according to any one of the above items, wherein the first mark and the second mark each comprise a rectangular pattern. (Attachment 6) The method of manufacturing a reticle according to any one of the preceding claims, wherein the illuminating step is performed by irradiating light to the reticle and receiving light transmitted therethrough. (Attachment 7) The method of manufacturing the reticle according to any one of the above 1 to 5, wherein the illuminating step is performed by illuminating the reticle and receiving light reflected by the reticle. a cover, which is a photomask having a light-shielding film on a transparent substrate, is characterized by using a photomask formed by forming a pattern on a transparent film formed on a transparent substrate by a (four) step (four) patterning step. The photomask has also been formed by the above-described drawing step, and the black mark formed by the defect of the light-shielding film pattern formed on the photomask by the first d'it formed on the mask is present. And correcting the defective portion by patterning including the above-described striking step, wherein the first mark and the second one of the tethers are included in the inside of the outer shape of the other mark The rectangular pattern is such that the distance between the first mark and the second mark formed by the light film or the photoresist film by patterning of the rubbing step including the defective portion is further examined by: Whether the distance is within 2 times of the established range Evaluation of the alignment error of the edge becomes possible 201028789 According to the manufacturing method of the reticle of the present invention, the defect inspection formed on the reticle film pattern is performed, and when there is a black defect caused by the residue, by the case including the drawing step The correction is made to correct the defective part, so even if it is a large black defect, the money is efficiently corrected. Further, in the case of correcting the black defect, although the drawing for forming the light-shielding film and the second drawing for correcting the sharp edge of the black defect are performed, the present invention includes the pair of quantitatively inspecting the second drawing. Since the inspection step of the quasi-error is performed, it is possible to evaluate whether or not an alignment error occurs in the correction stage of the black defect of the reticle and to quantitatively check the magnitude of the alignment error in the generated condition T. That is, a specific mark (first mark) is created at the time of drawing to form the first-person light-shielding film pattern, and a specific mark (second mark) is produced when the second black-defective pattern is corrected. And by using the distance between the marks, for example, the distance between the edges, to evaluate the alignment error of the drawing twice, the alignment (four) generated by the correction phase f of the black defect can be quantitatively checked. Furthermore, since the alignment error is evaluated during the manufacture of the mask, it is possible to perform possible correction (rework of the correction process) at this stage as needed, and even large black defects can be corrected efficiently and accurately. There are many advantages in curtain production. Further, by the mask of the present invention, defect inspection of the light-shielding film pattern formed on the photomask is performed by a specific mark (first mark) formed simultaneously with the formation of the light-shielding film case, when the residue is caused In the presence of a black defect, the size of the alignment error actually generated in the correction phase of the black defect can be quantitatively checked by correcting the defective portion by patterning including the greening step. That is, the above-mentioned first mark is in the relationship with the specific mark (second mark) formed on the light-shielding film when the black defect is corrected, and is the inside of the outer shape of one mark and the outer shape of the other mark. The graph # of the rectangle is included, and by evaluating the distance between the marks, for example, between the edges, the alignment error actually generated in the correction stage of the black defect can be quantitatively checked. The alignment error can be evaluated during the manufacturing process, so that it is possible to perform a possible correction (rework of the correction process, etc.) as needed. I. The following describes the best mode for carrying out the invention based on the drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a typical top view for explaining a manufacturing method of a photomask according to the present invention, in a step-by-step sequence. The mask blank used is a light-shielding film 2 mainly composed of chromium on the transparent substrate 1, and a photoresist is applied thereon to form a photoresist film. First, the photoresist film is subjected to a predetermined depiction of the case. The drawing usually uses electron lines or light (short-wavelength light), and in the present embodiment, an electron beam is used. Therefore, in the present embodiment, a positive photoresist is used as the photoresist. In the attack, a predetermined device is drawn on the photoresist film, and then developed by drawing to form a photoresist pattern 3 (see the first (a) circle). Further, a specific mark pattern is indicated while the above-described device pattern is being drawn. This particular bid pattern is used to evaluate the alignment error when the trace of the black defect correction is subsequently performed, for example, the area outside the area of the device pattern on which the substrate is formed. Therefore, the above-mentioned photoresist pattern includes the above-described drawing of the specific mark pattern and the mark (first mark) formed by development. The first mark will be described later in detail. Next, the light-shielding film 2 is etched by using the photoresist pattern 3 as an etching mask to form a light-shielding film pattern (see FIG. 1(b)). Since the light-shielding film 2' which is mainly composed of chromium in 201028789 parts is used, the etching method may be either dry etching or wet button etching. However, this embodiment utilizes wet etching. Thus, a mask having a predetermined light-shielding film case can be obtained in the transparent substrate & 1 (see Fig. 1(c)). As a result of the defect inspection of the defect inspection apparatus, the black mask 6 containing a small area and a large area as shown in Fig. 1(c) is present in a part of the mask. As shown in the above-mentioned Ka) and (5), this is, for example, a foreign matter 5 covering the opening of the photoresist pattern 3, and hinders the defects caused by the etching of the light-shielding film of the opening. It owes the black defect 6 or the normal drawing pattern data in the predetermined area including the position information and the shape information of the specific black defect 6 of the defect inspection. Next, for example, the same positive-change photoresist film is formed on the photomask as described above, and then the necessary information including the pattern data to be drawn is input to the drawing machine, and the black defect 6 is based on the above-mentioned drawing (4). Or patterning on a given area containing this. Next, the photoresist pattern 4 is formed after the development. Thereby, the photoresist film on the black defect 6 region is removed, and the light shielding film 2 is exposed (refer to the i-th (4) diagram). Further, at the same time as the step (4) is positioned, a predetermined alignment mark is used at a corner of the reticle or the like. Further, in the drawing for the second defect correction, a specific mark pattern is simultaneously drawn. The specific mark pattern is a pattern for evaluating the alignment error at the time of the second stroke by combining with the first mark, and is formed on, for example, a substrate as in the case of the first mark. The outer region of the pattern region is drawn so as to have a predetermined positional relationship with the first mark (from 201028789). Therefore, the photoresist pattern 4 includes marks formed by the second drawing and development described above (the second mark and the second mark are described in detail later), and the person uses the photoresist pattern 4 as a military screen to perform the last name. In the case of the chrome-shielding film, for example, dry etching or wet etching can be used. However, in this embodiment, wet etching can be performed by using a partial etching, in particular, by removing the black defect by the above etching. The transparent substrate 1 is exposed in the region without the need to shield the light-shielding film 2' (see Fig. 1(e)). Next, by removing the remaining photoresist pattern, the mask with the black missing m correction can be obtained (see First (f) 躅). Next, a method of inspecting an alignment error in the second fingerprinting for correcting the black defect will be described with reference to Fig. 2. Fig. 2 is a view for explaining the above embodiment. The cross-sectional circle (left half) and the top view (right half) of the step sequence of the specific mark pattern forming portion of the inspection method. The first of the photoresist patterns 3 for forming the above-mentioned light-shielding film pattern (mask pattern) Mark 'in this real In the form, four sets of pattern hearts B, C, and D are used as one set (see Fig. 2(a)). Any of A, B., C, and D is a rectangular pattern 'A is a small cage at the center. The photoresist pattern 'B of the open-cell (non-resistance) portion is a photoresist pattern having a small rectangular shape at the center, c is a pattern having a rectangular portion having a predetermined width, and D is a large rectangle at the center. Pattern of the opening portion. The following steps are exactly the same as those of the above-mentioned Fig. 1. That is, the photoresist pattern 3 containing the first mark as described above is used as an etching mask, and the light shielding film 2 is etched (see 2(b))), removing the remaining photoresist pattern, 11 201028789 A mask having a light-shielding film pattern corresponding to the first marks A, B, C, and D is obtained (see FIG. 2(c)). Secondly, by the pattern inspection of the obtained photomask, it is found that the black and the trapping conditions that need to be corrected are formed, another photoresist film is formed on the first mask, and the pattern is drawn according to the pattern data corresponding to the black defect, and the image is drawn after the drawing. Development is performed to form the photoresist pattern 4 (see Fig. 2(d)). The second mark included in the photoresist pattern 4 corresponds to the first marks A' B, c, and D, and four types of patterns a, b, c, and d are used as one set (see the second (d). )) ea, b, c, d are all rectangular patterns, a is a rectangular pattern larger than the first mark A, b is a rectangular pattern larger than the first mark β, and c is the first A pattern of a rectangle having a small mark c, and d is a rectangular shape smaller than the first mark d. As described above, in the present embodiment, the first mark A, the second mark a, the first mark B, and the second mark b, The first mark c is used in combination with the second mark c, the first mark D and the second mark d. When the first mark and the second mark are formed on the transparent substrate, the shape of one of the marks is another blessing The shape of the interior contains the shape. Further, the first mark and the second mark have a pattern having a symmetrical shape in both the direction and the direction perpendicular thereto. Further, the outer shape of the first marks and the outer shape of the second marks are rectangular similar shapes, and the pattern data of the marks includes a rectangular pattern having a common center of gravity. Therefore, in the present embodiment, when the first marks a, b, c, d, the second marks a, b, c, and d are formed on the transparent substrate, the respective combinations are on the surface of the transparent substrate. The side of the view is upward, with the edge of the first-th spear, 201028789, the edge of the edge, the edge of the second mark, and the edge of the edge of the first mark (in the case of the standard β C, c, D, d), or The edge of the second mark, the """ mark edge slow, Chu __ ΛΛ the edge of the mark edge of the second mark is arranged in the order (in the case of marks A, a, B, b) (refer to the second ( d) Figure). In the case where the black defect is formed, the edge of the film pattern corresponding to the first mark is measured by the second drawing after forming the light PH case 4 (see the second (4) figure). The alignment error at the second tracing is evaluated by checking whether the distance is within a predetermined range from the edge of the second mark among the photoresist patterns. In the case of the present embodiment, as shown in FIG. 3, in any of the four types of patterns, for example, the edge of the pattern of the light shielding film corresponding to the first mark A and the photoresist pattern 4 are measured in the X direction. The distance ^ and in' of the edge of the second mark a are evaluated as the magnitude of the alignment error, and it is checked whether the value is within a predetermined range (allowable range) set in advance. The combination of the first mark β and the second mark b, the first mark C and the second mark c, the first mark D and the second mark 4 are also examined in the same manner. Furthermore, the alignment error for the Y direction can be similarly evaluated. In the second (4) and third figures, the position of the mark is a preferred measurement of the present embodiment. As described above, after the resist pattern 4 formed by the second drawing for performing the black defect correction is formed, the inspection is performed, and when the magnitude of the alignment error exceeds the allowable range, the photoresist pattern 4 can be removed. The correction is performed by forming and performing drawing (rework of the photoresist pattern) again with the photoresist film. As described above, 'After the formation of the photoresist pattern 4 as needed, the inspection is performed 13 201028789. 'The photoresist pattern 4 including the second mark is used as an etching mask to etch the light shielding film 2 (refer to the second (e)囷), removing the remaining photoresist pattern to form a film pattern corresponding to the first marks a, b, c, d and the second marks a, b, c, d (refer to the second (f) 囷). After the final step, the alignment error is checked. As shown in FIG. 3, for example, in the X direction, the edge of the light shielding film pattern corresponding to the first mark c and the c corresponding to the second mark are measured. The distances nk and nc of the edges of the light-shielding film pattern are evaluated by (ΙΠ(;_ηε)/2, and the value of the alignment error is checked, and it is checked whether the value is within a predetermined range (allowable range) set in advance. The alignment error in the Υ direction can be similarly evaluated. In the second (f) diagram, the position indicating the 〇 mark is a preferred measurement position in the embodiment, and at the stage, the pattern is lost due to the pattern of the mark ( For example, the first mark A, the first mark b, and the second mark d), in the stage after the formation of the photoresist pattern 4 described above, can be inspected by the combination of the first mark and the second mark. Factor of CD (key size) error (reduction of pattern) 'In order to purely evaluate only the factor of alignment error, it is possible to detect the presence or absence of the alignment error in the direction of the X-axis and the Y-axis, respectively. Mark and second mark 'better on one side A circumferential shape having a symmetrical shape to both the direction and the direction perpendicular thereto (for example, the left-right symmetry 'up and down symmetry, and the first mark and the second mark are preferably arranged to be 'the distance between the edges can be measured with high precision. Further, the positional relationship of the first mark and the outer shape of the first mark are preferably similar in shape 'to make it easier to measure the distance between the first mark and the edge of the second mark. In the pattern for inspection described in the present embodiment, a plurality of 14 201028789 patterns are also used in a set, and in particular, the inspection is performed at a stage after the second pattern of the photoresist pattern 4 is formed, and is carried on the substrate. In the state where the photoresist is inspected, the transmittance of the photoresist is also affected. In addition, the measurement of either of the reflected light and the transmitted light is highly accurate (whether or not In this case, a high contrast can be obtained. Since it is possible to select a pattern of an easy-to-measure mark at the time of measurement, it is preferable to examine both the reflected light and the transmitted light as the case may be. In short, as in the present embodiment, in each product, a plurality of rounds for inspection marks (combination of the first mark and the second mark) may be used in combination, or one type to one type of _2 may be selected for each product. The first marks A, E, C, and D and the second marks a, b, c, and d used in the above embodiments are merely representative examples, and in order to achieve the effects of the present invention, the marks are used. The shape, the size, the combination of the first mark and the second mark, the positional relationship thereof, and the like are of course not limited to the above-described embodiments. 〈# is explained by the above embodiment. According to the present invention, the following effects can be obtained. a defect inspection of the light-shielding film pattern formed on the photomask, and when the black defect caused by the residue exists, the defect portion is corrected by the surface formation including the drawing step, so that even a large black defect can be Correctly improved. (2) In the case of performing black defect correction, although the drawing for forming the light shielding film pattern and the drawing of the black defect are performed, the present invention can quantitatively check the actual value in the correction stage of the black defect of the mask. The resulting pair of 15 201028789 quasi-error size. In other words, a mark (first mark) specific for drawing when forming the first light-shielding film pattern and a mark (second mark) for correcting the second black defect are separately produced, and then borrowed. The alignment error of the second drawing is evaluated by the distance between the marks, for example, the distance between the edges, and the alignment error actually generated in the correction stage of the black defect can be quantitatively checked. (3) Furthermore, since the alignment error can be evaluated during the manufacturing of the mask, it is possible to perform possible correction at this stage (rework of the correction process, etc.) even if it is a large black defect, there may be It is highly efficient and accurate, and it has many advantages. The present invention has been described above with reference to preferred embodiments, but the present invention is not limited to the embodiments described above. It will be understood by those skilled in the art that the present invention can be variously modified in the spirit and scope of the invention as set forth in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 (a) to (f) are schematic top views for explaining an embodiment of a method of manufacturing a photomask according to the present invention in order of steps. The second (a) to (f) are cross-sectional views showing the procedure of the specific mark pattern forming portion of the inspection method for the alignment error of the above embodiment, and the upper view. Fig. 3 is a top view circle for explaining a specific mark round portion of the above inspection method. 16 201028789 [Description of main component symbols] 1 Transparent substrate 2 Light-shielding film 3 Photoresist pattern 4 Photoresist pattern 5 Foreign matter 6 Black defect
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