201005852 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種使洗淨構件接觸於例如半導體晶 或液晶顯示器用之所謂玻璃基板（LCD基板）的基板背 藉以洗淨基板的基板洗淨裝置及基板洗淨方法。 【先前技術】 φ 在半導體裝置之製造工序中，極爲重要者係將例如 導體晶圓（以下稱爲晶圓）保持在潔淨無塵的狀態。因 在各個製造過程或處理過程之前後，係按照需要而設置 洗淨晶圓之表面的製程。 又近年來，由於伴隨所謂液浸曝光或雙層圖案化的 線技術之更細微化使半導體裝置之製造工序中所含的工 數增加，且在晶圓之背面附著微粒子的風險變大，所以 設置有洗淨晶圓之背面的製程（參照專利文獻1)。 φ 使用第15圖簡單地說明洗淨晶圓之背面的裝置。 15圖所示的洗淨裝置係具備吸附保持晶圓W之背面中 部分的旋轉夾頭（spin chuck) 10，而該旋轉夾頭10係 馬達11、及藉由該馬達11之旋轉驅動而旋轉的旋轉軸 所構成。又在由前述旋轉夾頭10所吸附保持的晶圓W 下方側，係將具有刷子部1 2的洗淨構件1 3配置於前述 轉軸1 4之外側，其中刷子部1 2係例如爲將多數個塑膠 維紮束成圓柱狀的結構。前述刷子部12係在將其上面 壓於晶圓W之背面的狀態下旋轉。進而在前述洗淨裝 圓 面 半 此 有 配 序 也 第 央 由 14 之 旋 纖 按 置 -5- 201005852 係設置有使洗淨刷子1 3在基板洗淨位置與待避位置之間 移動用之未圖示的移動手段，當前述洗淨刷子13位於待 避位置時就從前述刷子部1 2之上方側供給洗淨液。在以 如此構成的洗淨裝置進行洗淨處理中，藉由對旋轉中的晶 圓W從下方側按壓處於潤濕狀態的刷子部1 2使晶圓W與 刷子部12滑動以去除晶圓W背面之微粒子。 然而，由於一旦前述刷子部12使用一定時間就會開 始污染，所以使用虛設晶圓並如與上面所述般地藉由使處 於潤濕狀態的刷子部1 2與虛設晶圓滑動，藉此進行該刷 子部12的洗淨作業。又在交換前述刷子部12之後由於會 從該刷子部1 2立即產生灰塵，所以爲了要減低來自刷子 部12的揚塵，而在交換刷子部12時流動虛設晶圓並進行 該刷子部1 2的洗淨作業。 但是，在上述洗淨裝置之刷子部12的洗淨作業中係 有如下的問題。爲了要防止刷子部12之污染而一旦定期 地流動虛設晶圓，則在流動虛設晶圓的期間並無法對製品 晶圓進行洗淨處理，而有降低晶圓生產性的問題》尤其是 當交換刷子部12時流動虛設晶圓的情況，由於爲了要使 刷子部1 2的洗淨能力穩定而要流動虛設晶圓好幾次，所 以晶圓的生產性會大幅地降低。又由於前述洗淨裝置係爲 洗淨晶圓W之背面的專用裝置，所以將刷子部1 2按壓於 晶圓W之背面的力量因係爲不會傷及晶圓W之背面的程 度之力故非常弱，且使用虛設晶圓來洗淨刷子部12需要 花較長的時間，此也成爲使晶圓生產性降低的原因之一。 -6- 201005852 (專利文獻1)日本特開平11-67705 【發明內容】 (發明所欲解決之問題） 本發明係在此情事之下而開發完成者，其目的在於提 供一種可提高基板生產性的基板洗淨裝置及基板洗淨方法 〇 φ (解決問題之手段） 本發明提供一種基板洗淨裝置，係在藉由旋轉保持手 段保持於水平的狀態下，一邊將洗淨液供給至繞著垂直軸 旋轉的基板背面，一邊使洗淨構件之刷子部接觸而洗淨該 基板背面的基板洗淨裝置，其特徵在於具備： 刷子洗淨體，係間離於藉由前述洗淨構件來洗淨基板 的位置而設置，且該刷子洗淨體的下表面是形成爲與前述 刷子部接觸而洗淨該刷子部的洗淨面：及 φ 移動手段，係使前述洗淨構件在洗淨基板的區域與藉 由前述刷子洗淨體來洗淨前述刷子部的區域之間移動；及 旋轉手段，係用以將洗淨構件之刷子部壓抵於前述刷 子洗淨體的下表面，並使刷子洗淨體與洗淨構件相對地旋 轉；以及 洗淨液供給手段，係當使前述刷子洗淨體與刷子構件 相對地旋轉時將洗淨液供給至前述刷子洗淨體的下表面與 前述刷子部之間。 又本發明提供一種基板洗淨裝置，係在藉由旋轉保持 201005852 手段保持於水平的狀態下，一邊將洗淨液供給至繞著垂直 軸旋轉的基板背面，一邊使洗淨構件之刷子部接觸而洗淨 該基板背面的基板洗淨裝置，其特徵在於具備： 刷子洗淨體，其下表面是形成爲與前述刷子部接觸而 洗淨該刷子部的洗淨面；及 移動手段，係使前述刷子洗淨體在前述洗淨構件洗淨 基板的區域與離開該區域的待機區域之間移動；及 旋轉手段，係用以將洗淨構件之刷子部壓抵於位在洗 淨基板的區域之前述刷子洗淨體的下表面，並使刷子洗淨 體與洗淨構件相對地旋轉；以及 洗淨液供給手段，係當使前述刷子洗淨體與刷子構件 相對地旋轉時將洗淨液供給至前述刷子洗淨體的下表面與 前述刷子部之間。 上述的基板洗淨裝置，較佳爲，在顯示前述刷子部與 前述刷子洗淨體之潤滑狀態的stribeck曲線圖中以可獲得 彈性流體潤滑的旋轉數之條件下進行旋轉。具體而言，較 佳爲，前述刷子部之旋轉數係例如爲200rpm以上。 又上述的基板洗淨裝置中，亦可更具備爲了去除已附 著於前述刷子洗淨體的下表面之有機物而照射紫外線的紫 外線燈。又較佳爲，前述刷子洗淨體係例如爲玻璃基板。 又本發明提供一種基板洗淨方法，係在藉由旋轉保持 手段保持於水平的狀態下，一邊將洗淨液供給至繞著垂直 軸旋轉的基板背面，一邊使洗淨構件之刷子部接觸而洗淨 該基板背面的基板洗淨方法，其特徵在於： -8- 201005852 使用刷子洗淨體，該刷子洗淨體係間離於藉由前述洗 淨構件來洗淨基板的位置而設置，且該刷子洗淨體的下表 面是形成爲與前述刷子部接觸而洗淨該刷子部的洗淨面， 並包含： 在洗淨基板之後，藉由移動手段使前述洗淨構件移動 至與前述刷子洗淨體的下表面相對向之位置的工序；及 將洗淨構件之刷子部壓抵於前述刷子洗淨體的下表面 Φ ，一邊使兩者相對地旋轉，一邊將洗淨液供給至刷子洗淨 體的下表面與刷子部之間，藉此洗淨刷子部的工序；以及 之後，使前述洗淨構件移動至洗淨基板背面的區域而 洗淨基板背面的工序。 又本發明提供一種基板洗淨方法，係在藉由旋轉保持 手段保持於水平的狀態下，一邊將洗淨液供給至繞著垂直 軸旋轉的基板背面，一邊使洗淨構件之刷子部接觸而洗淨 該基板背面的基板洗淨方法，其特徵在於： φ 使用刷子洗淨體，其下表面是形成爲與前述刷子部接 觸而洗淨該刷子部的洗淨面，並包含： 在藉由前述洗淨構件來洗淨基板之後，藉由移動手段 使前述刷子洗淨體移動並使該刷子洗淨體的下表面與洗淨 構件之刷子部相對向的工序；及 .將洗淨構件之刷子部壓抵於前述刷子洗淨體的下表面 ，一邊使兩者相對地旋轉，一邊將洗淨液供給至刷子洗淨 體的下表面與刷子部之間，藉此洗淨刷子部的工序：以及 之後，使前述刷子洗淨體從藉由洗淨構件來洗淨基板 -9- 201005852 背面的洗淨區域退避開，然後藉由洗淨構件來洗淨基板背 面的工序。 更且，本發明提供一種記憶媒體，係儲存有洗淨基板 背面的基板洗淨裝置所用的電腦程式之記憶媒體，其特徵 在於：前述程式係包含有用以執行上述基板洗淨方法之工 序0 (發明效果） 本發明的基板洗淨裝置，由於係在洗淨基板的區域使 洗淨過基板的洗淨構件朝藉由刷子洗淨體洗淨刷子部的區 域移動，以在該區域洗淨該洗淨構件，所以可不進行爲了 將洗淨構件之刷子部予以洗淨而停止基板的洗淨處理並流 動虛設晶圓的作業，且可不停止流動至基板洗淨裝置的基 板而連續地進行洗淨處理。又在洗淨構件的刷子部之洗淨 中，由於係一邊在刷子洗淨體與刷子部之間供給洗淨液一 邊將洗淨構件的刷子部按壓在刷子洗淨體的下表面，使刷 子洗淨體與洗淨構件相對地旋轉而洗淨刷子部，所以可在 短時間內進行洗淨構件的洗淨作業。藉由此等的效果來提 高基板的生產性。 【實施方式】 在以下所說明的實施形態中，係就設置於塗敷、顯影 裝置之型式的洗淨裝置加以說明，作爲基板洗淨裝置（以 下稱爲洗淨裝置）的一例。有關包含該洗淨裝置之洗淨工 -10- 201005852 序的光微影製程之具體例雖於後述，但是本洗淨裝置係例 如設置於塗敷、顯影裝置之出口附近，且擔任在將形成有 光阻膜之作爲基板的半導體晶圓（以下稱爲晶圓）之背面 予以洗淨之後朝後續的曝光裝置送出的任務。 最初一邊參照第1圖至第4圖一邊說明本實施形態的 洗淨裝置之構造。第1圖係顯示洗淨裝置2的立體圖；第 2圖係顯示其俯視圖；第3圖及第4圖係顯示縱剖視圖。 φ 如第1圖所示，洗淨裝置2，係成爲將吸附墊20a、 2〇b、旋轉夾頭3、洗淨構件5及玻璃基板6安裝於上面 開口之呈箱狀的下杯（under cup) 43的構造，其中吸附 墊20a、20b係大致水平地吸附保持從塗敷.、顯影裝置內 之搬運手段（後述的第二交接機械臂D2)所接收的晶圓 W之背面周緣部近旁；旋轉夾頭3係爲從該吸附墊2 0a、 2〇b接收晶圓W並大致水平地吸附保持晶圓W之背面中 央部的旋轉保持手段；洗淨構件5係洗淨晶圓W之背面 :玻璃基板6係爲用於洗淨該洗淨構件5的刷子洗淨體。 首先，就吸附墊20a、20b加以說明。如第1圖所示 ，洗淨裝置2係具備二個吸附墊20a、20b，二個吸附墊 20a、20b係配置成可大致平衡地支撐保持晶圓W背面之 周緣近旁部。前述吸附墊20a、20b係與未圖示的吸引管 連接，且具備作爲真空夾頭之功能，用以夾介第1圖及第 2圖所示的吸附孔28 —邊吸附一邊保持晶圓W之背面周 緣部。如第1圖所示，各自的吸附墊20a、20b係分別安 裝於細長棒狀之墊支撐部21a、21b的大致中央部，該等 -11 - 201005852 二支墊支撐部21a、21b之兩端部係分別安裝於二支橋樑 (bridge beam)部22a、2 2b，藉此可構成由墊支撐部21a 、2 1b與橋樑部22a、22b所組成的護圈（curb) 23。 二支橋樑部22a、22b之兩端，係分別固定在沿著後 述側壁而張設於下杯43所相對向的二側壁（朝向第1圖 位於正前方側的側壁與深內側的側壁）之外側的二條皮帶 24a、24b。各自的皮帶24a、24b，係捲掛在由二個一組 所構成的捲掛軸25a、25b，各捲掛軸25a、25b係安裝於 與上述二個側壁分別平行設置的二片側板26a、26b。捲 掛軸25a之一個係連接於驅動機構27，夾介捲掛軸25a、 25b或皮帶2 4a、24b使橋樑部22a、22b移動，可使已述 的護圈23整體朝第1圖及第2圖所示的X方向自如地移 動。 又如第1圖所示，各自的側板26a、26b，係藉由由滑 件27a與導軌2 7b所構成的二組升降機構27來支撐其底 面，且固定於洗淨裝置2之未圖示的框體床面。在該等的 升降機構27之一個係設置有未圖示之作爲驅動手段的驅 動機構，藉由該驅動機構使滑件2 7a在導軌27b內升降， 藉此可使已述的護圈23整體朝圖中的Z方向升降。 又在護圈23上，係跨設有用以抑制洗淨液之飛散之 呈甜甜圈狀的上杯（upper cup) 41。在該上杯41之上面 係設置有口徑比晶圓W大的開口部41a，夾介該開口部 41a可在搬運手段與吸附墊20之間進行晶圓W的交接作 業。另外，跨設於護圈23上的上杯41，係如第3圖所示 -12- 201005852 地構成伴隨護圈23之活動而朝X方向與Z方向移動。 其次就旋轉夾頭3加以說明。旋轉夾頭3係爲從下方 支擦晶圓W之背面中央部的圓板，且設置於大致呈平行 配置的二個吸附墊20a、20b之中間。如第3圖所示’旋 轉夾頭3係夾介軸部3b而連接於驅動機構（旋轉夾頭馬 達）33，藉由該旋轉夾頭馬達33而構成旋轉自如及升降 自如。又旋轉夾頭3也與未圖示的吸引管連接，且具備作 φ 爲真空夾頭之功能用以經由第1圖及第2圖所示的吸附孔 3a —邊吸附一邊保持晶圓w。 在前述旋轉夾頭3之側方，係設置有與升降機構32a 連接的三支支撐銷32俾可支撐晶圓W之背面而升降，藉 此可藉由與外部的搬運手段之連動作用而從搬運手段朝吸 附墊20a、2 0b交接晶圓W，及從旋轉夾頭3朝搬運手段 交接晶圓W。 又在旋轉夾頭3及支撐銷32之周圍，係設置有包圍 參 該等機器之由圓筒體所構成的風刀（air knife) 31。該風 刀31係沿著圓筒體之上端的周方向形成有未圖示的氣體 之噴射口，藉由從該噴射口朝晶圓W背面噴出氣體而將 洗淨液朝圓筒體之外側吹散。 其次就進行晶圓W之背面洗淨的洗淨構件5加以說 明。如第1圖及第5圖所示，前述洗淨構件5係由如下構 件所構成：刷子部5 0，係由例如將多數個塑膠纖維紮束 成圓柱狀的結構所構成；及基座51，係保持該刷子部50 :及支撐體52，係支撐該基座51之下方；以及驅動機構 -13- 201005852 53,係爲連接於前述支撐體52，且夾介該支撐體52使前 述刷子部50朝周方向旋轉的旋轉手段。又前述基座51係 相對於支撐體52構成裝卸自如。另外，作爲前述刷子部 50係除了塑膠纖維以外亦可使用尼龍纖維等，更可爲使 用多孔質且具有伸縮性的圓柱狀之海綿例如PVC海綿、 胺基甲酸乙酯海綿等所製成的構造。位於此種構造中的刷 子部50之直徑R係爲450mm以下，此例中係爲50mm， 在其上面的大致中央係形成有用以吐出洗淨液的直徑r例 如5mm之吐出孔54。又如第5圖所示，在前述支撐體51 之內部係設置有使洗淨液流通的通流管55,在前述通流 管55之另一端側係連接有夾介閥VI及調整洗淨液之溫 度的溫度調整部56供給洗淨液的洗淨液供給源57。作爲 洗淨液，係可列舉脫離子水（DIW ) 、DIW與臭氧水之混 合液、或是DIW與鹼性液之混合液等。在本實施形態中 ，吐出孔54、通流管55、閥VI、溫度調整部56及洗淨 液供給源57係相當於洗淨液供給手段。 又在前述驅動機構53之下表面係安裝有用以支撐前 面所述的洗淨構件5之支撐部46，該支撐部46係成爲彎 曲成L字型以免與晶圓W或橋樑部22b干涉。前述支撐 部46之基端，係在第1圖中從設置有旋轉夾頭3之方向 觀看洗淨構件5而固定於沿著深內側之側壁所張設的皮帶 58。前述皮帶58係捲掛在由二個一組所構成的捲掛軸59 ，此等的捲掛軸59係安裝於上述的深內側之側壁外面。 前述捲掛軸59之一方係連接於驅動機構60，可夾介皮帶 -14- 201005852 58及支撐部46使洗淨構件5自如地朝第1圖及第2圖所 示的Y方向移動。 其次就用於洗淨已述的洗淨構件5之玻璃基板6加以 說明。如第1圖及第4圖所示，玻璃基板6,係設置於被 設在前述上杯41之周邊近旁的圓筒體之基座63上。前述 基座63係設置在基座支撐部61a、61b，該基座支撐部 61a、61b係將其兩端部分別平行地安裝於二支橋樑部22 a φ 、22b。前述基座支撐部61a與基座支撐部61b之離開距 離，係爲當藉由升降機構27使橋樑部2 2a、22b下降並將 刷子部50之上面按壓在玻璃基板62之背面時，前述刷子 部50與基座支撐部61a、61b不會接觸的程度之距離。又 在前述玻璃基板6之上方側，係設置有照射紫外線的紫外 線燈62。如後所述，一旦進行幾次的前述刷子部5 0之洗 淨作業，玻璃基板6之背面就會因附著於刷子部50之有 機物等而受到污染而使該背面疏水化，且潤濕性會變差而 φ 使刷子部50之消耗加速。然後，由於因該刷子部50之消 耗而會產生微粒子，所以要從前述玻璃基板6之上方側朝 該玻璃基板6之表面全體照射紫外線，藉以去除附著於該 背面的有機物等。 此外，如第3圖所示，在下杯43之底部，係設置有 用以排出積留於下杯43內的洗淨液之排洩管44;以及用 以排除洗淨裝置2內之氣流的二支排氣管45。前述排氣 管45係爲了防止積留於下杯43之底部的洗淨液流入排氣 管45，而從下杯43之底面朝上方延伸，並且爲了避免從 -15- 201005852 上方滴落下來的洗淨液直接進入排氣管45 ’而藉由安裝 於風刀31周圍之形成環狀之蓋的內杯（inner cup) 42來 覆蓋。 又前述洗淨裝置2係具備控制部9。有關該控制部9 係一邊參照第6圖一邊加以說明。第6圖中的元件符號 90係爲匯流排，在該匯流排90係連接有晶圓洗淨程式91 、刷子洗淨程式92、CPU93以及輸入手段94等，第6圖 中係以功能方塊圖來表示此等。 前述晶圓洗淨程式91，係如後述般爲了在吸附墊20a 、20b與旋轉夾頭3之間交接從外部之搬運裝置所接收的 晶圓W，或利用洗淨構件5來洗淨晶圓W之背面，而對 各驅動部29、53、60、升降機構27、閥VI、溫度調整部 5 6等輸出動作指令。 前述刷子洗淨程式92，係如後述般爲了在洗淨晶圓 W的區域與刷子部50被洗淨的區域之間移動洗淨構件5 ，或在玻璃基板7之背面按壓刷子部50之上面來洗淨該 刷子部50，而對各驅動部29、53、60、升降機構27、閥 V 1、溫度調整部56、紫外線燈62等輸出動作指令。 前述輸入手段94，係由進行各種輸入操作的鍵盤及 滑鼠、與液晶畫面或CRT畫面等軟性開關之組合所構成 ，.且如後述般地進行刷子洗淨模式之選擇。 此等程式91、92係以儲存於記憶媒體例如軟碟（FD )、記憶卡、光碟（CD )、磁光碟（MO )、記憶卡等記 憶手段的狀態儲存於程式儲存部。 -16- 201005852 根據以上說明的構成，雖就洗淨刷子部5 0之動作一 邊參照第7圖至第9圖一邊加以說明，但是在進行此說明 之前先針對洗淨晶圓W之背面的動作做簡單說明。首先 ，例如從馬蹄形狀之搬運手段（第二交接機械臂D2)交 接晶圓W至三支支撐銷32，之後使支撐銷32下降而將晶 圓W交接至吸附墊20a、20b。此後吸附墊20，係以即使 從背面按壓刷子部50也不會移動的方式吸附保持隔著晶 φ 圓W之背面的中心區域而相對向的二處部位，且在保持 晶圓W的狀態下搬運至預定的位置，進而使晶圓W之背 面中心區域與刷子部50相對向，接著，使吸附墊20a、 20b下降而將晶圓W之背面的中心區域按壓在刷子部50 之上面。接著，在使風刀31動作防止洗淨液因迴旋進入 而附著於旋轉夾頭3之表面之後，從刷子部50之上面的 吐出孔54供給洗淨液，並且使刷子部50旋轉而開始晶圓 W之背面中心區域的洗淨作業。如第2圖所示，該洗淨作 φ 業係藉由依驅動機構29而使晶圓W朝X方向的移動與依 驅動機構60而使洗淨構件5朝Y方向的移動之組合而進 行。 若結束晶圓W之背面中心區域的洗淨作業，則使吸 附墊20a、20b移動以使晶圓W中心部位於旋轉夾頭3之 上方，其次進行晶圓W從吸附墊20a、20b朝旋轉夾頭3 之交接作業。經交接晶圓W後的旋轉夾頭3，係以與吸附 墊20a、20b大致相同的高度吸附保持晶圓W，因此前述 刷子部5 0係成爲被按壓在晶圓W的狀態。接著從刷子部 -17- 201005852 50之上面的吐出孔54供給洗淨液，並且使刷子部50旋 轉而開始晶圓W之背面外周區域的洗淨作業。如第2圖 所示，該洗淨作業係藉由旋轉夾頭之旋轉與依驅動機構 60而使洗淨構件5朝Y方向的移動之組合而進行。 若結束晶圓W之背面外周區域的洗淨作業，則使旋 轉夾頭3上升至預定的高度位置，且在此位置使晶圓W 高速旋轉，並進行甩動乾燥即所謂的旋轉乾燥，以使晶圓 W之背面乾燥。在此一旦將從晶圓W之背面中心區域的 洗淨至旋轉乾燥的工序當作一個製程，則在進行該製程 20至50次之後，就會移至洗淨刷子部50之動作。洗淨 以上的晶圓W之背面的製程，係藉由晶圓洗淨程式91來 執行。 接著就洗淨刷子部5 0的動作加以說明。一旦洗淨預 定片數的晶圓W則會從未圖示的警報產生部發出警報， 且根據此警報例如操作者會藉由輸入手段94來選擇刷子 洗淨模式。當選擇刷子洗淨模式時洗淨刷子部50係還位 在洗淨晶圓W的區域，而該洗淨刷子部5 0係如下地從晶 圓W之洗淨區域移動至刷子部50之洗淨區域。首先在進 行旋轉乾燥之後，藉由升降機構27使護圈23上升至上杯 41之下側周面不會撞到前述刷子部50之上面的程度之高 度位置。其次，如第2圖所示，藉由驅動機構60使洗淨 構件5移動至由基座支撐部61a與基座支撐部61b所夾持 的區域S。當使洗淨構件5移動至前述區域S時，在刷子 部50不位於由基座63所包圍的區域內之情況時，藉由驅 -18 - 201005852 動機構29使基座63移動，並使刷子部50位於由基座63 所包圍的區域內。 如此在使前述洗淨構件5從晶圓W之洗淨區域移動 至刷子部50之洗淨區域之後，如第7圖所示，藉由 升降機構27使基座63下降俾使刷子部50與玻璃基板6 之間的距離成爲預定的距離。之後，如第7圖（b)所示 ，從形成於刷子部5 0之上面的吐出孔5 4以預定的流量例 0 如400cc/min吐出洗淨液R，使玻璃基板6之背面潤濕， 並且藉由驅動機構53以預先設定好的旋轉數使刷子部50 旋轉。另外’從前述吐出孔54吐出的洗淨液R係藉由前 述溫度調整部56而調整至預定的溫度例如30°C。此後， 如第7圖（c)所示，藉由升降機構27使基座63下降， 以使玻璃基板6之背面接觸於刷子部50之上面。進而調 整成：使基座63下降並以預先設定好的按壓力將刷子部 50按壓在玻璃基板6。 φ 第8圖係顯示洗淨構件被洗淨之樣態的圖。一旦從吐 出孔54以40〇CC/min吐出洗淨液R至玻璃基板6之背面 ，並且一邊以 200rpm使刷子部 50旋轉一邊以例如 lN/cm2按壓該刷子部50之上面，就會在介於玻璃基板6 與刷子部50之間的洗淨液R產生壓力，而刷子部50會成 爲漂浮在洗淨液R之上的狀態。此狀態係指在顯示刷子部 50與玻璃基板6之潤滑狀態的stribeck曲線圖（參照第9 圖）中相當於包含摩擦係數//爲最小値P< 〇.〇1的曲線之 腰身部分的區域之彈性流體潤滑之意，且在此彈性流體潤 -19- 201005852 滑的狀態下洗淨刷子部50。換句話說，在洗淨液R介於 刷子部50與玻璃基板6之間的狀態下洗淨刷子部50。另 外，第9圖中的縱軸係表示摩擦係數；z，横軸係表示（洗 淨液R之黏度X刷子部50之旋轉速度）/按壓力（7? V/F ) 〇 在此一旦就彈性流體潤滑之範圍加以具體敘述則當以 最靠近腰身部分之摩擦係數P中的橫軸之（洗淨液R之 黏度X刷子部50之旋轉速度）/按壓力爲Q時，彈性流體 潤滑之範圍就成爲 kQ^Q<IQ(Q = 0_6、k = 0.2、I = 2)， 且此範圍若是在刷子部50與玻璃基板6則刷子部50之旋 轉速度 V就成爲 70rpm~500rpm。換句話說，所謂在 stribeck曲線圖中可獲得彈性流體潤滑的旋轉數，並非只 限於可獲得stribeck曲線圖中的摩擦係數之最小値的旋轉 數。當組配裝置時，雖然爲了獲得摩擦係數之最小値而設 定參數，但是實際上摩擦係數多有比該最小値稍微大的情 況。所謂彈性流體潤滑，係相當於例如汽車行駛於潮濕的 道路時輪胎與道路幾乎沒有摩擦，即使踩煞車輪胎也會對 道路打滑的狀態。因而本發明中所謂「可獲得彈性流體潤 滑的旋轉數」，係指可發揮如此作用的旋轉數。 在將前述刷子部50按壓在前述玻璃基板6預定時間 例如10秒之後，會如第7圖（d)所示藉由升降機構27 使基座63上升至預定的高度位置，並使前述刷子部50離 開前述玻璃基板6。然後在反覆進行使用第7圖（b)至 第7圖（d )所說明的一系列動作複數次例如5次之後， -20- 201005852 停止洗淨液R的供給以及刷子部5 0的旋轉，而結束刷子 部50的洗淨作業。 另一方面，結束背面之洗淨處理的晶圓W，係從旋轉 夾頭3交接至支撐銷32，之後藉由支撐銷32與搬運手段 的連動作用交接至搬運手段。然後此晶圓W係朝向後續 的曝光裝置送出，而未處理的晶圓W則搬入至洗淨裝置2 〇 φ 在結束刷子部50的洗淨作業之後，藉由升降機構27 使護圈23上升至上杯4 1之下側周面不會撞到前述刷子部 50之上面的程度之高度位置，且藉由驅動機構60使洗淨 構件5移動至晶圓W的洗淨區域。然後對重新被搬入至 洗淨裝置2的晶圓W開始進行與前面所述者同樣的背面 洗淨作業。洗淨以上的刷子部5 0之製程，係藉由刷子洗 淨程式92來執行。 另外，在開始進行刷子部50的洗淨作業時，並不被 φ 限於上述的形態亦可構成前述刷子洗淨程式92，俾於一 旦洗淨預定片數的晶圓W則可自動地選擇刷子洗淨模式 〇 又在交換刷子部50的情況時，係在將使用完的刷子 部50經由基座51而從支撐體52拆除，然後將未使用的 刷子部50經由基座51而安裝於該支撐體52之後，例如 操作者藉由輸入手段94選擇刷子洗淨模式，以進行與前 面所述者同樣的刷子部5 0之洗淨作業。 又一旦重複前述刷子部50所進行的洗淨次數，則玻 -21 - 201005852 璃基板6之背面就會因附著於刷子部50的有機物等而逐 漸被污染並使該背面疏水化，且使潤濕性變差。因此一旦 刷子部50之洗淨次數成爲預先設定好的次數，則當刷子 部50洗淨晶圓W之背面時，就會從前述紫外線燈62朝 向玻璃基板6照射紫外線，藉以去除附著於該背面的有機 物等而可進行使其親水化的處理。進行此處理的工序係涵 蓋在刷子洗淨程式92的工序中。 依據上述的實施形態，則由於在洗淨晶圓W的區域 使洗淨過晶圓W的洗淨構件5朝藉由玻璃基板6洗淨刷 子部50的區域移動，並在此區域洗淨該刷子部50，所以 爲了要洗淨刷子部50亦可不進行停止晶圓之洗淨處理而 流動虛設晶圓的作業，且不停止流動至洗淨裝置2而來的 晶圓W而可連續地進行洗淨處理。又在洗淨構件5之刷 子部50的洗淨作業中，由於使洗淨液R以預定的流量從 形成於刷子部50之上面的吐出孔54吐出，並且一邊使前 述刷子部50旋轉一邊以預先設定好的按壓力將該刷子部 5 0按壓在玻璃基板6來洗淨刷子部5 0，所以可在短時間 內進行刷子部50之洗淨作業。藉由此等的效果而提高晶 圓的生產性。 又在上述的實施形態中，由於係以在顯示刷子部50 與玻璃基板6之潤滑狀態的stribeck曲線圖中可獲得彈性 流體潤滑的旋轉數，在此實施形態中係以70rpm~500rpm 之旋轉速度V使刷子部50旋轉，換句話說，在洗淨液R 介於刷子部50與玻璃基板6之間的狀態下洗淨該刷子部 -22- 201005852 50，所以沒有刷子部50與玻璃基板6摩擦而使刷子部50 損傷之虞。因此刷子部5 0之使用壽命會變長。 另外在上述的實施形態中，雖係藉由升降機構27將 刷子部50之上面按壓在玻璃基板6之底面，但是使刷子 部50朝周方向旋轉的驅動機構53，係具有夾介支撐體51 可將刷子部50朝上下移動的功能，且藉由此驅動機構53 將刷子部50之上面按壓在玻璃基板6之底面》 φ 又在上述的實施形態中，雖然是使洗淨液R從形成於 刷子部50上面之大致中央的吐出孔54吐出以使玻璃基板 6之下表面潤濕，但是並不被限於此構成而亦可構成爲： 在玻璃基板6之下表面的大致中央部形成吐出孔，且使洗 淨液R從該吐出孔吐出而使玻璃基板6之下表面潤濕。 其次就本發明的另一實施形態加以說明。在此形態中 ’如第10圖及第11圖所示，除了使玻璃基板82在洗淨 構件5洗淨晶圓W的區域與離開該區域的待機區域之間 • 移動以外’其他成爲與在上述實施形態中所說明的洗淨裝 置2完全相同的構成。 一旦就此形態的構成加以詳述，則第1 〇圖及第1 1圖 中的元件符號80係爲與前述橋樑部22b平行設置的軌道 部’此軌道部80的兩端係分別固定在前述下杯43之上面 。另外’此例中的前述軌道部80係在以洗淨構件5來洗 淨晶圓W之背面中心區域時且當使護圈23移動至預定位 置時’設置在不與橋樑部22b相撞的位置。在前述軌道部 8〇係設置有夾介玻璃支撐體81使玻璃基板82朝Y軸方 -23- 201005852 向移動的移動機構83。在前述玻璃支撐體81之基端側係 設置有夾介導軸84使該玻璃支撐體81朝上下驅動的驅動 部85。又在前述玻璃支撐體81之前端側係設置有夾介導 軸86使玻璃基板82朝上下驅動的驅動部87。前述驅動 部85係爲了如下目的而設置：在藉由驅動部27使護圈 23上升時，使玻璃支撐體81上升至預定的高度位置以免 護圈23撞到玻璃支撐體81。 一旦就此形態中的作用加以敘述，則如前面所述般， 在藉由洗淨構件5洗淨晶圓W之後，藉由移動機構83使 玻璃基板82移動以使該玻璃基板82之下表面與洗淨構件 5之刷子部50相對向（參照第11圖）。接著藉由驅動部 87夾介導軸86使玻璃基板82下降，以使刷子部50與玻 璃基板82之間的距離成爲預定的距離。之後，使洗淨液 R以預定的流量從形成於刷子部5 0之上面的吐出孔5 4吐 出，且使玻璃基板82之背面潤濕，並且藉由驅動機構53 使刷子部50以預先設定好的旋轉數來旋轉。此後，藉由 驅動部87使玻璃基板82下降，以使玻璃基板82之背面 接觸於刷子部50之上面。進而調整成：使玻璃基板82下 降並以預先設定好的按壓力將刷子部50按壓在玻璃基板 82。然後與前面所述者同樣地在洗淨液R介於刷子部50 與玻璃基板82之間的狀態下洗淨刷子部50。即使是如此 的狀態也可獲得與上述同樣的效果。 其次就將上述的洗淨裝置2應用於塗敷、顯影裝置的 —例做簡單說明。第12圖係將曝光裝置連接於塗敷、顯 -24- 201005852 影裝置的系統之俯視圖；第13圖係該系統的立體圖。又 第1 4圖係該系統的縱剖視圖。在塗敷、顯影裝置係設置 有載具區塊（carrier block) S1，其構成··交接機械臂C 從載置於其載置台101上的密閉型之載具100取出晶圓w 並交接至處理區塊S2，交接機械臂C從處理區塊S2接收 處理完的晶圓w並送回至載具100。 本實施形態的洗淨裝置2，係構成：當從處理區塊S2 φ 朝曝光裝置4交接晶圓W時，即如第12圖所示，在介面 區塊S3之入口部進行成爲處理對象的晶圓W之背面洗淨 作業。 如第13圖所示，前述處理區塊S2於此例中係由下往 上之順序層疊第一區塊（DEV層）B1、第二區塊（BCT 層）B2、第三區塊（COT層）B3及第四區塊（TCT層） B4而構成，其中第一區塊（DEV層）B1係用以進行顯影 處理；第二區塊（BCT層）B2係用以進行形成於光阻劑 φ 膜之下層側的反射防止膜之形成處理；第三區塊（COT層 )B3係用以進行光阻劑膜之塗敷；第四區塊（TCT層） B4係用以進行形成於光阻劑膜之上層側的反射防止膜之 形成。 第二區塊（BCT層）B2與第四區塊（TCT層）B4， 係分別由塗敷單元、加熱/冷卻系之處理單元群及搬運機 械臂A2、A4所構成，其中塗敷單元係藉由旋轉塗敷（旋 塗）法來塗敷用以形成各反射防止膜的藥液；加熱/冷卻 系之處理單元群係用以進行由該塗敷單元所進行的處理之 -25- 201005852 前處理及後處理；搬運機械臂A2、A4係設置於前述塗敷 單元與處理單元群之間，且在此等單元之間進行晶圓W 的交接作業。有關第三區塊（COT層）B3除了前述藥液 爲光阻劑液以外其他爲同樣的構成。 另一方面，有關第一區塊（DEV層）B1係如第14圖 所示般在一個DEV層B1內層疊有二層的顯影單元 然後在該DEV層B1內，係設置有用以將晶圓W搬運至 此等二層之顯影單元110的搬運機械臂A1。換句話說’ 對二層之顯影單元110而言搬運機械臂A1係爲共通化的 構成。 進而在處理區塊S2，係如第13圖及第14圖所示般 設置有棚架單元U5，來自載具區塊S1的晶圓W係藉由 前述棚架單元U5之一個交接單元’例如第二區塊（BCT 層）B2所對應的交接單元D1而依次地搬運。接著晶圓W 係藉由第二區塊（BCT層）B2內的搬運機械臂A2’從該 交接單元CPL2搬運至各單元（反射防止膜單元及加熱/冷 卻系之處理單元群），且利用此等單元來形成反射防止膜 〇 之後，晶圓W係經由棚架單元U5之交接單元BF2、 設置於前述棚架單元U5之近旁之升降自如的第一交接機 械臂D1、棚架單元U5之交接單元CPL3及搬運機械臂 A3而搬入至第三區塊（COT層）B3 ’且藉以形成光阻劑 膜。進而晶圓W係被交接至搬運機械臂架單元U5 之交接單元BF3。另外已形成有光阻劑膜的晶圓W，也有 201005852 在第四區塊（TCT層）B4進一步形成有反射防止膜的情 況。在此情況下，晶圓W係經由交接單元CPL4交接至搬 運機械臂A4，且在已形成有反射防止膜之後藉由搬運機 械臂A4交接至交接單元TRS4。 另一方面，在DEV層B1內之上部，係設置有作爲搬 運手段的飛梭機械臂E，該飛梭機械臂E係專供從設置於 棚架單元U5的交接單元CPL1 1將晶圓W直接搬運至設 φ 置於棚架單元U6的交接單元CPL 12所用。已形成有光阻 劑膜或進一步形成有反射防止膜的晶圓W，係經由交接機 械臂D1從交接單元BF3、TRS4接收且交接至交接單元 CPLU，且從此處藉由飛梭機械臂E直接搬運至棚架單元 U6之交接單元CPL1 2。在此如第12圖所示般設置於棚架 單元U6與洗淨裝置2之間之作爲搬運手段的交接機械臂 D2，係構成旋轉、進退、升降自如，且具備分別專門地 搬運洗淨前後之晶圓W的例如二個機械臂。晶圓W，係 • 藉由交接機械臂D2之洗淨前專用的機械臂從TRS 12取出 ，且搬運至洗淨裝置2內藉以接受背面洗淨作業。結束洗 淨作業後的晶圓W係藉由交接機械臂D2中的洗淨後專用 的機械臂載置於TRS13之後，取入於介面區塊S3。另外 第14圖中附有CPL的交接單元係兼作爲調溫用的冷卻單 元，而附有BF的交接單元係兼作爲可載置複數個膜的晶 圓W之緩衝單元。 接著，藉由介面機械臂B而搬運至曝光裝置S4，且 在此進行預定的曝光處理之後，載置於棚架單元U6之交 -27- 201005852 接單元TRS 6並送回至處理區塊S2。其次晶圓W，係在第 一區塊（DEV層）B1進行顯影處理，且藉由搬運機械臂 A1送回至棚架單元U5中的交接機械臂C0。另外第12圖 中的U1-U4係分別爲層疊有加熱部與冷卻部的熱系單元 群。 另外，在第12圖至第14圖所示的塗敷、顯影裝置中 雖已顯示將實施形態的洗淨裝置2設置於介面區塊S3之 入口部的例子，但是設置洗淨裝置2的位置並非被限定於 此例。例如亦可在介面區塊S3內設置該洗淨裝置2，或 構成設置於處理區塊S2之入口部、例如棚架單元U5而 對形成有光阻劑膜之前的晶圓W進行背面洗淨，或設置 於載具區塊S1內。 更且，可適用本實施形態的洗淨裝置2之裝置，並未 被限定於塗敷、顯影裝置。例如在進行離子植入後之退火 工序的熱處理裝置中也可適用本洗淨裝置2。一旦在晶圓 W之背面附著有微粒子的狀態下進行退火工序，則也會在 此工序中使微粒子從晶圓W之背面進入，且在此微粒子 與表面的電晶體之間形成電流路徑。因此，在此工序之前 可藉由對晶圓W進行背面洗淨以提高製品的良率。 【圖式簡單說明】 第1圖係顯示本發明的洗淨裝置之立體圖。 第2圖係前述洗淨裝置之俯視圖。 第3圖係前述洗淨裝置之縱剖視圖。 -28- 201005852 第4圖係前述洗淨裝置之縱剖視圖。 第5圖係顯示洗淨刷子的構成之立體圖。 第6圖係顯示本發明實施形態的控制部之方塊圖。 第7圖係說明前述洗淨裝置之動作用的工序圖。 第8圖係顯示洗淨構件被洗淨之樣態的說明圖。 第 9圖係顯示洗淨構件與玻璃基板之潤滑狀態的 stribeck曲線圖。 φ 第10圖係適用上述洗淨裝置而顯示塗敷、顯影裝置 之實施形態的俯視圖。 第11圖係顯示本發明另一實施形態的洗淨裝置之立 體圖。 第12圖係顯示本發明另一實施形態的洗淨裝置之俯 視圖。 第13圖係上述塗敷、顯影裝置的立體圖。 第1 4圖係上述塗敷、顯影裝置的縱剖視圖。 0 第1 5圖係顯示習知洗淨裝置的槪略縱剖視圖。 【主要元件符號說明】 W _·半導體晶圓 2 :洗淨裝置 20a > 20b ：吸附墊 21a、21b :墊支撐部 22a、22b :橋樑部 23 :護圈 -29- 201005852 27 :升降機構 3 :旋轉夾頭 41 :上杯 5 :洗淨刷子 5 0 :洗淨構件 5 1 :基座 52 :支撐體 53 :驅動機構 5 4 :吐出孔 5 5 :通流管 5 6 :溫度調整部 5 7 :洗淨液供給源 58 :皮帶 6 :玻璃基板 60 :驅動機構 6 2 :紫外線燈 9 :控制部 -30-201005852 6. TECHNOLOGICAL FIELD OF THE INVENTION The present invention relates to a substrate for cleaning a substrate by contacting a cleaning member with a substrate of a so-called glass substrate (LCD substrate) for, for example, a semiconductor crystal or a liquid crystal display. Device and substrate cleaning method. [Prior Art] φ In the manufacturing process of a semiconductor device, it is extremely important to keep a conductor wafer (hereinafter referred to as a wafer) in a clean and dust-free state. The process of cleaning the surface of the wafer is set as needed after each manufacturing process or process. In recent years, the number of processes included in the manufacturing process of a semiconductor device has increased due to the miniaturization of the line technology by the so-called liquid immersion exposure or double-layer patterning, and the risk of attaching fine particles to the back surface of the wafer has increased. A process for cleaning the back surface of the wafer is provided (see Patent Document 1). φ The device for cleaning the back side of the wafer is briefly described using Figure 15. The cleaning device shown in Fig. 15 is provided with a spin chuck 10 that sucks and holds a portion of the back surface of the wafer W, and the rotary chuck 10 is a motor 11 and is rotated by the rotation of the motor 11. The rotation axis is composed of. Further, on the lower side of the wafer W sucked and held by the spin chuck 10, the cleaning member 13 having the brush portion 12 is disposed on the outer side of the rotating shaft 14, wherein the brush portion 12 is, for example, a majority The plastics are bundled into a cylindrical structure. The brush portion 12 is rotated in a state where the upper surface of the brush portion 12 is pressed against the back surface of the wafer W. Further, in the above-mentioned cleaning device, the circular surface is half-aligned, and the center is also provided by the spinner press---5-201005852, and the cleaning brush 13 is moved between the substrate cleaning position and the to-be-avoided position. In the illustrated moving means, when the cleaning brush 13 is at the position to be avoided, the cleaning liquid is supplied from the upper side of the brush portion 12. In the cleaning process by the cleaning apparatus configured as described above, the wafer W and the brush portion 12 are slid by pressing the brush portion 12 in the wet state from the lower side of the rotating wafer W to remove the wafer W. Microparticles on the back. However, since the contamination is started once the brush portion 12 is used for a certain period of time, the dummy wafer is used and the brush portion 12 in the wet state is slid with the dummy wafer as described above. The cleaning operation of the brush portion 12. Further, since the dust is immediately generated from the brush portion 12 after the brush portion 12 is exchanged, in order to reduce the dust from the brush portion 12, the dummy wafer is flowed while the brush portion 12 is exchanged, and the brush portion 12 is performed. Washing work. However, the following problems are caused in the cleaning operation of the brush portion 12 of the above-described cleaning device. In order to prevent contamination of the brush portion 12, once the dummy wafer is periodically flowed, the product wafer cannot be cleaned during the flow of the dummy wafer, and there is a problem of reducing wafer productivity, especially when exchanged. In the case where the dummy portion of the brush portion 12 flows, the dummy wafer is flown several times in order to stabilize the cleaning ability of the brush portion 12, and the productivity of the wafer is greatly reduced. Further, since the cleaning device is a dedicated device for cleaning the back surface of the wafer W, the force of pressing the brush portion 12 against the back surface of the wafer W is such that it does not damage the back surface of the wafer W. Therefore, it is very weak, and it takes a long time to wash the brush portion 12 using a dummy wafer, which is one of the reasons for the decrease in wafer productivity. -6-201005852 (Patent Document 1) Japanese Patent Laid-Open No. 11-67705 [Disclosure] The present invention has been developed under the circumstances, and an object thereof is to provide a substrate productivity improvement. Substrate cleaning device and substrate cleaning method 〇 φ (Means for Solving the Problem) The present invention provides a substrate cleaning device which supplies a cleaning liquid while being held horizontal by a rotation holding means A substrate cleaning device that washes the back surface of the substrate with the vertical axis rotated while contacting the brush portion of the cleaning member, and further includes a brush cleaning body that is separated from the cleaning member by the cleaning member The bottom surface of the brush cleaning body is provided, and the cleaning surface of the brush cleaning body is formed by contacting the brush portion to wash the brush portion and the φ moving means for cleaning the substrate a region between the region where the brush portion is washed by the brush cleaning body; and a rotating means for pressing the brush portion of the cleaning member against the brush cleaning body a lower surface, and the brush cleaning body is rotated relative to the cleaning member; and the cleaning liquid supply means supplies the cleaning liquid to the brush cleaning body when the brush cleaning body and the brush member are rotated relative to each other The lower surface is between the aforementioned brush portion. Further, the present invention provides a substrate cleaning apparatus which is configured to contact a brush portion of a cleaning member while supplying a cleaning liquid to a back surface of a substrate that rotates about a vertical axis while being held horizontal by means of a rotation holding 201005852. Further, the substrate cleaning device for cleaning the back surface of the substrate includes: a brush cleaning body, a lower surface of which is a cleaning surface that is formed in contact with the brush portion to wash the brush portion; and a moving means The brush cleaning body moves between a region where the cleaning member cleans the substrate and a standby region that is separated from the region; and a rotating means for pressing the brush portion of the cleaning member against the region where the substrate is cleaned The lower surface of the brush cleaning body and the brush cleaning body and the cleaning member are rotated relative to each other; and the cleaning liquid supply means for cleaning the liquid when the brush cleaning body and the brush member are rotated relative to each other It is supplied between the lower surface of the brush cleaning body and the brush portion. Preferably, the substrate cleaning device rotates under the condition that the number of rotations of the elastic fluid lubrication can be obtained in a stribeck graph showing the lubrication state of the brush portion and the brush cleaning body. Specifically, it is preferable that the number of rotations of the brush portion is, for example, 200 rpm or more. Further, in the above-described substrate cleaning apparatus, an ultraviolet lamp for irradiating ultraviolet rays in order to remove an organic substance attached to the lower surface of the brush cleaning body may be further provided. Further preferably, the brush cleaning system is, for example, a glass substrate. Further, the present invention provides a substrate cleaning method in which a cleaning liquid is supplied to a back surface of a substrate that is rotated about a vertical axis while being held horizontal by a rotation holding means, and the brush portion of the cleaning member is brought into contact with each other. A method of cleaning a substrate on the back surface of the substrate, wherein: -8-201005852 is a brush cleaning body, wherein the brush cleaning system is disposed apart from a position at which the substrate is washed by the cleaning member, and the The lower surface of the brush cleaning body is a cleaning surface that is formed in contact with the brush portion to wash the brush portion, and includes: after cleaning the substrate, moving the cleaning member to the brush washing by moving means a step of facing the lower surface of the clean body; and pressing the brush portion of the cleaning member against the lower surface Φ of the brush cleaning body, and supplying the cleaning liquid to the brush while rotating the two relative to each other The step of washing the brush portion between the lower surface of the clean body and the brush portion; and thereafter, moving the cleaning member to a region where the back surface of the substrate is cleaned to wash the back surface of the substrate. Further, the present invention provides a substrate cleaning method in which a cleaning liquid is supplied to a back surface of a substrate that is rotated about a vertical axis while being held horizontal by a rotation holding means, and the brush portion of the cleaning member is brought into contact with each other. A method of cleaning a substrate on the back surface of the substrate, wherein: φ is a brush cleaning body, and a lower surface thereof is a cleaning surface that is formed in contact with the brush portion to wash the brush portion, and includes: After the cleaning member washes the substrate, the brush cleaning body is moved by moving means, and the lower surface of the brush cleaning body faces the brush portion of the cleaning member; and the cleaning member is The brush portion is pressed against the lower surface of the brush cleaning body, and the cleaning liquid is supplied between the lower surface of the brush cleaning body and the brush portion while rotating the brush portion, thereby washing the brush portion. After that, the brush cleaning body is washed away from the washing area on the back surface of the substrate -9-201005852 by the cleaning member, and then the back surface of the substrate is washed by the cleaning member. Furthermore, the present invention provides a memory medium storing a computer program memory medium for cleaning a substrate cleaning device on a back surface of the substrate, wherein the program includes a process 0 for performing the substrate cleaning method ( According to the substrate cleaning device of the present invention, the cleaning member for cleaning the substrate is moved to the region where the brush portion is washed by the brush cleaning body in the region where the substrate is cleaned, and the substrate is washed in the region. Since the cleaning member is used, the cleaning process of the cleaning member is stopped, the cleaning process of the substrate is stopped, and the operation of the dummy wafer is performed, and the substrate can be continuously washed without stopping the flow to the substrate cleaning device. deal with. In the cleaning of the brush portion of the cleaning member, the brush portion of the cleaning member is pressed against the lower surface of the brush cleaning body while the cleaning liquid is supplied between the brush cleaning body and the brush portion. Since the cleaning body and the cleaning member rotate relative to each other to wash the brush portion, the cleaning operation of the cleaning member can be performed in a short time. The productivity of the substrate is improved by the effects of the like. [Embodiment] In the embodiment described below, a cleaning device provided in a coating and developing device will be described as an example of a substrate cleaning device (hereinafter referred to as a cleaning device). A specific example of the photolithography process including the cleaning apparatus of the cleaning apparatus -10-201005852 will be described later, but the cleaning apparatus is provided, for example, near the exit of the coating and developing apparatus, and will be formed. The back surface of a semiconductor wafer (hereinafter referred to as a wafer) having a photoresist film as a substrate is cleaned and then sent to a subsequent exposure device. First, the structure of the cleaning device of the present embodiment will be described with reference to Figs. 1 to 4 . Fig. 1 is a perspective view showing the cleaning device 2; Fig. 2 is a plan view thereof; and Figs. 3 and 4 are longitudinal sectional views. φ As shown in Fig. 1, the cleaning device 2 is a box-shaped lower cup in which the adsorption pads 20a and 2b, the rotary chuck 3, the cleaning member 5, and the glass substrate 6 are attached to the upper surface. The structure of the cup 43 is such that the adsorption pads 20a and 20b are substantially horizontally adsorbed and held in the vicinity of the peripheral edge portion of the wafer W received from the coating means and the conveying means (the second transfer robot D2 to be described later) received in the developing device. The rotary chuck 3 is a rotation holding means for receiving the wafer W from the adsorption pads 20a, 2〇b and substantially holding and holding the central portion of the back surface of the wafer W; the cleaning member 5 is for cleaning the wafer W Back surface: The glass substrate 6 is a brush cleaning body for washing the cleaning member 5. First, the adsorption pads 20a and 20b will be described. As shown in Fig. 1, the cleaning device 2 includes two adsorption pads 20a and 20b, and the two adsorption pads 20a and 20b are arranged to support the peripheral portion of the back surface of the wafer W in a substantially balanced manner. The adsorption pads 20a and 20b are connected to a suction pipe (not shown) and have a function as a vacuum chuck for sandwiching the adsorption holes 28 shown in Figs. 1 and 2 to hold the wafer W while adsorbing. The peripheral part of the back side. As shown in Fig. 1, the respective adsorption pads 20a and 20b are attached to substantially the center portions of the elongated rod-shaped pad supporting portions 21a and 21b, respectively, and the ends of the two-pad supporting portions 21a and 21b are -11 - 201005852 The parts are attached to the bridge beams 22a and 22b, respectively, whereby a curb 23 composed of the pad supporting portions 21a and 21b and the bridge portions 22a and 22b can be formed. The two ends of the two bridge portions 22a and 22b are respectively fixed to the two side walls (the side walls facing the front side and the side walls on the deep side facing the first figure) which are disposed on the side wall of the lower cup 43 along the side wall which will be described later. Two outer belts 24a, 24b. The respective belts 24a, 24b are wound around two winding shafts 25a, 25b, and the respective winding shafts 25a, 25b are attached to the two side panels 26a, 26b which are provided in parallel with the two side walls, respectively. One of the winding shafts 25a is connected to the drive mechanism 27, and the bridge winding shafts 25a, 25b or the belts 24a, 24b move the bridge portions 22a, 22b, so that the entire retainer 23 described above can be directed to the first and second figures. The X direction shown moves freely. Further, as shown in Fig. 1, each of the side plates 26a and 26b supports the bottom surface thereof by two sets of lifting mechanisms 27 composed of a slider 27a and a guide rail 27b, and is fixed to the cleaning device 2 (not shown). The frame bed surface. A drive mechanism as a drive means (not shown) is provided in one of the lift mechanisms 27, and the slide mechanism 27a is lifted and lowered in the guide rail 27b by the drive mechanism, whereby the retainer 23 as described above can be integrated. Lift up in the Z direction in the picture. Further, on the retainer 23, an upper cup 41 having a doughnut shape for suppressing the scattering of the washing liquid is provided. An opening 41a having a larger diameter than the wafer W is provided on the upper surface of the upper cup 41, and the opening of the wafer W can be performed between the conveying means and the adsorption pad 20 with the opening 41a interposed therebetween. Further, the upper cup 41 which is placed over the retainer 23 is moved in the X direction and the Z direction in association with the movement of the retainer 23 as shown in Fig. 3 -12-201005852. Next, the rotary chuck 3 will be described. The rotary chuck 3 is a circular plate that wipes the center portion of the back surface of the wafer W from below and is disposed between the two adsorption pads 20a and 20b which are disposed substantially in parallel. As shown in Fig. 3, the rotary chuck 3 is coupled to the drive mechanism (rotary chuck motor) 33 by the interposing shaft portion 3b, and is configured to be rotatable and freely movable by the rotary chuck motor 33. Further, the rotary chuck 3 is also connected to a suction pipe (not shown), and has a function of φ being a vacuum chuck for holding the wafer w while sucking through the adsorption holes 3a shown in Figs. 1 and 2 . On the side of the rotary chuck 3, three support pins 32 connected to the elevating mechanism 32a are provided to support the back surface of the wafer W to be lifted and lowered, thereby being able to be connected with an external transport means. The transport means delivers the wafer W to the adsorption pads 20a, 20b, and transfers the wafer W from the rotary chuck 3 to the transport means. Further, around the rotary chuck 3 and the support pin 32, an air knife 31 composed of a cylindrical body surrounding the machines is provided. The air knife 31 is formed with an injection port of a gas (not shown) along the circumferential direction of the upper end of the cylindrical body, and the cleaning liquid is discharged toward the outside of the cylindrical body by ejecting gas from the ejection opening toward the back surface of the wafer W. Blow off. Next, the cleaning member 5 for cleaning the back surface of the wafer W will be described. As shown in FIGS. 1 and 5, the cleaning member 5 is composed of a member in which a brush portion 50 is formed by, for example, a structure in which a plurality of plastic fibers are bundled into a column shape, and a base 51. Keeping the brush portion 50 and the support body 52 under the support base 51; and driving mechanism-13-201005852 53, for connecting to the support body 52, and interposing the support body 52 to make the brush A rotating means for rotating the portion 50 in the circumferential direction. Further, the susceptor 51 is detachably attached to the support body 52. In addition, as the brush portion 50, a nylon fiber or the like may be used in addition to the plastic fiber, and a structure made of a porous and stretchable cylindrical sponge such as a PVC sponge or a urethane sponge may be used. . The brush portion 50 located in such a structure has a diameter R of 450 mm or less, in this example, 50 mm, and a discharge hole 54 having a diameter r of, for example, 5 mm for discharging the cleaning liquid is formed substantially at the center of the upper portion. Further, as shown in Fig. 5, a through-flow pipe 55 through which the cleaning liquid flows is provided inside the support body 51, and a sandwich valve VI is attached to the other end side of the flow-through pipe 55, and the cleaning is adjusted. The temperature adjustment unit 56 of the liquid temperature supplies the cleaning liquid supply source 57 of the cleaning liquid. Examples of the washing liquid include deionized water (DIW), a mixed liquid of DIW and ozone water, or a mixed liquid of DIW and an alkaline liquid. In the present embodiment, the discharge port 54, the through-flow pipe 55, the valve VI, the temperature adjustment unit 56, and the cleaning liquid supply source 57 correspond to the cleaning liquid supply means. Further, a support portion 46 for supporting the cleaning member 5 described above is attached to the lower surface of the drive mechanism 53, and the support portion 46 is bent into an L shape so as not to interfere with the wafer W or the bridge portion 22b. The base end of the support portion 46 is fixed to the belt 58 which is stretched along the side wall of the deep inner side in the direction in which the cleaning chuck 5 is viewed from the direction in which the rotary chuck 3 is provided. The belt 58 is wound around a winding shaft 59 composed of two sets, and the winding shaft 59 is attached to the outside of the side wall of the deep inner side. One of the winding shafts 59 is connected to the drive mechanism 60, and the cleaning member 5 can be moved in the Y direction shown in Figs. 1 and 2 so as to be interposed between the belts -14 - 201005852 58 and the support portion 46. Next, the glass substrate 6 for washing the cleaning member 5 described above will be described. As shown in Figs. 1 and 4, the glass substrate 6 is provided on a base 63 of a cylindrical body provided near the periphery of the upper cup 41. The base 63 is provided on the base supporting portions 61a and 61b, and the base supporting portions 61a and 61b are attached to the two bridge portions 22a to φ and 22b, respectively, in parallel at both ends. The distance between the susceptor support portion 61a and the susceptor support portion 61b is such that when the bridge portions 22a, 22b are lowered by the elevating mechanism 27 and the upper surface of the brush portion 50 is pressed against the back surface of the glass substrate 62, the aforementioned brush The distance between the portion 50 and the base support portions 61a, 61b is not in contact. Further, an ultraviolet lamp 62 that emits ultraviolet rays is provided on the upper side of the glass substrate 6. As will be described later, once the cleaning operation of the brush portion 50 is performed several times, the back surface of the glass substrate 6 is contaminated by the organic matter adhering to the brush portion 50, and the back surface is hydrophobized, and the wettability is obtained. It will deteriorate and φ accelerates the consumption of the brush portion 50. Then, since the fine particles are generated by the consumption of the brush portion 50, the entire surface of the glass substrate 6 is irradiated with ultraviolet rays from the upper side of the glass substrate 6, whereby organic substances adhering to the back surface and the like are removed. Further, as shown in Fig. 3, at the bottom of the lower cup 43, a drain pipe 44 for discharging the washing liquid accumulated in the lower cup 43 is provided; and two branches for removing the airflow in the washing device 2 are provided. Exhaust pipe 45. The exhaust pipe 45 extends upward from the bottom surface of the lower cup 43 in order to prevent the cleaning liquid accumulated in the bottom portion of the lower cup 43 from flowing into the exhaust pipe 45, and is prevented from dripping from above -15-201005852. The cleaning liquid directly enters the exhaust pipe 45' and is covered by an inner cup 42 which is attached to the air knife 31 and which forms an annular cover. Further, the cleaning device 2 includes a control unit 9. The control unit 9 will be described with reference to Fig. 6 . The component symbol 90 in Fig. 6 is a bus bar, and a wafer cleaning program 91, a brush cleaning program 92, a CPU 93, an input means 94, and the like are connected to the bus bar 90, and a functional block diagram is shown in Fig. 6. To express this. The wafer cleaning program 91 is used to transfer the wafer W received from the external transfer device between the adsorption pads 20a and 20b and the rotary chuck 3, or to clean the wafer by the cleaning member 5, as will be described later. On the back side of W, an operation command is output to each of the drive units 29, 53, 60, the elevating mechanism 27, the valve VI, and the temperature adjustment unit 56. The brush cleaning program 92 moves the cleaning member 5 between the region where the wafer W is cleaned and the region where the brush portion 50 is cleaned, or presses the brush portion 50 on the back surface of the glass substrate 7 as will be described later. The brush portion 50 is washed, and an operation command is output to each of the driving portions 29, 53, 60, the elevating mechanism 27, the valve V1, the temperature adjusting portion 56, the ultraviolet lamp 62, and the like. The input means 94 is composed of a combination of a keyboard and a mouse for performing various input operations, and a soft switch such as a liquid crystal screen or a CRT screen, and the brush cleaning mode is selected as will be described later. The programs 91 and 92 are stored in the program storage unit in a state stored in a memory medium such as a floppy disk (FD), a memory card, a compact disc (CD), a magneto-optical disc (MO), or a memory card. -16-201005852 According to the configuration described above, the operation of the cleaning brush portion 50 will be described with reference to FIGS. 7 to 9. However, before the description, the operation of cleaning the back surface of the wafer W is performed. Do a brief explanation. First, for example, the wafer W is transferred from the horseshoe-shaped conveying means (second transfer robot D2) to the three support pins 32, and then the support pin 32 is lowered to transfer the wafer W to the adsorption pads 20a, 20b. After that, the adsorption pad 20 adsorbs and holds the two portions facing each other across the center region of the back surface of the crystal φ circle W so as not to move even when the brush portion 50 is pressed from the back surface, and holds the wafer W while holding the wafer W. After transporting to a predetermined position, the center area of the back surface of the wafer W faces the brush portion 50, and then the adsorption pads 20a and 20b are lowered to press the center area of the back surface of the wafer W against the upper surface of the brush portion 50. Then, after the air knife 31 is operated to prevent the cleaning liquid from adhering to the surface of the rotary chuck 3 due to the swirling entry, the cleaning liquid is supplied from the discharge hole 54 on the upper surface of the brush portion 50, and the brush portion 50 is rotated to start the crystal. Washing operation in the center area of the back of the circle W. As shown in Fig. 2, the cleaning operation φ is performed by a combination of the movement of the wafer W in the X direction by the drive mechanism 29 and the movement of the cleaning member 5 in the Y direction by the drive mechanism 60. When the cleaning operation of the central portion of the back surface of the wafer W is completed, the adsorption pads 20a and 20b are moved so that the center portion of the wafer W is positioned above the rotary chuck 3, and then the wafer W is rotated from the adsorption pads 20a and 20b. Handover of the chuck 3. Since the spin chuck 3 after the transfer of the wafer W adsorbs and holds the wafer W at substantially the same height as the adsorption pads 20a and 20b, the brush portion 50 is pressed against the wafer W. Then, the cleaning liquid is supplied from the discharge port 54 on the upper surface of the brush portion -17-201005852 50, and the brush portion 50 is rotated to start the cleaning operation of the outer peripheral region of the back surface of the wafer W. As shown in Fig. 2, the cleaning operation is performed by a combination of the rotation of the rotary chuck and the movement of the cleaning member 5 in the Y direction by the drive mechanism 60. When the cleaning operation of the outer peripheral area of the back surface of the wafer W is completed, the rotary chuck 3 is raised to a predetermined height position, and the wafer W is rotated at a high speed at this position, and the so-called spin drying is performed by tumbling drying. The back side of the wafer W is dried. Here, once the process of washing from the center of the back surface of the wafer W to the spin drying is regarded as one process, the process of moving the brush portion 50 is performed after the process is performed 20 to 50 times. The process of cleaning the back surface of the wafer W is performed by the wafer cleaning program 91. Next, the operation of washing the brush portion 50 will be described. When the predetermined number of wafers W is washed, an alarm is generated from an alarm generating unit (not shown), and based on the alarm, for example, the operator selects the brush cleaning mode by the input means 94. When the brush cleaning mode is selected, the cleaning brush portion 50 is also positioned in the region where the wafer W is cleaned, and the cleaning brush portion 50 is moved from the cleaning region of the wafer W to the cleaning of the brush portion 50 as follows. Net area. First, after the spin drying, the retainer 23 is raised by the elevating mechanism 27 to a position where the lower peripheral surface of the upper cup 41 does not hit the upper surface of the brush portion 50. Next, as shown in Fig. 2, the cleaning mechanism 5 is moved by the drive mechanism 60 to the region S held by the susceptor support portion 61a and the susceptor support portion 61b. When the cleaning member 5 is moved to the aforementioned region S, when the brush portion 50 is not located in the region surrounded by the susceptor 63, the susceptor 63 is moved by the -18-201005852 moving mechanism 29, and The brush portion 50 is located in a region surrounded by the base 63. After the cleaning member 5 is moved from the cleaning region of the wafer W to the cleaning region of the brush portion 50, as shown in Fig. 7, the susceptor 63 is lowered by the elevating mechanism 27, so that the brush portion 50 is The distance between the glass substrates 6 becomes a predetermined distance. Thereafter, as shown in Fig. 7(b), the cleaning liquid R is discharged from the discharge hole 5 4 formed on the upper surface of the brush portion 50 at a predetermined flow rate of 0, for example, 400 cc/min, and the back surface of the glass substrate 6 is wetted. And the brush unit 50 is rotated by the drive mechanism 53 with a predetermined number of rotations. Further, the cleaning liquid R discharged from the discharge port 54 is adjusted to a predetermined temperature, for example, 30 ° C by the temperature adjustment unit 56 described above. Thereafter, as shown in Fig. 7(c), the susceptor 63 is lowered by the elevating mechanism 27 so that the back surface of the glass substrate 6 contacts the upper surface of the brush portion 50. Further, the susceptor 63 is lowered and the brush portion 50 is pressed against the glass substrate 6 with a predetermined pressing force. Fig. 8 is a view showing a state in which the cleaning member is washed. When the cleaning liquid R is discharged from the discharge hole 54 at 40 〇CC/min to the back surface of the glass substrate 6, and the brush portion 50 is rotated at 200 rpm, the upper portion of the brush portion 50 is pressed at, for example, 1 N/cm 2 . The cleaning liquid R between the glass substrate 6 and the brush portion 50 generates pressure, and the brush portion 50 is in a state of floating above the cleaning liquid R. This state means that the stribeck graph (refer to Fig. 9) showing the lubrication state of the brush portion 50 and the glass substrate 6 corresponds to the coefficient of friction// is the minimum 値P. < 〇. The curve of the waist portion of the curve of the 〇1 is elastic fluid lubrication, and the brush portion 50 is washed in a state where the elastic fluid is -19-201005852. In other words, the brush portion 50 is washed in a state where the cleaning liquid R is interposed between the brush portion 50 and the glass substrate 6. Further, the vertical axis in Fig. 9 indicates the coefficient of friction; z, and the horizontal axis indicates (the viscosity of the cleaning liquid R X the rotational speed of the brush portion 50) / the pressing force (7? V/F) 〇 once it is The range of the elastic fluid lubrication is specifically described. When the horizontal axis of the friction coefficient P closest to the waist portion P (the viscosity of the cleaning liquid R X the rotational speed of the brush portion 50) / the pressing force is Q, the elastic fluid is lubricated. The scope becomes kQ^Q <IQ (Q = 0_6, k = 0.2, I = 2), and in the range of the brush portion 50 and the glass substrate 6, the rotational speed V of the brush portion 50 is 70 rpm to 500 rpm. In other words, the number of revolutions in which the elastic fluid lubrication can be obtained in the stribeck graph is not limited to the number of revolutions at which the minimum coefficient of friction in the stribeck graph can be obtained. When the apparatus is assembled, although the parameters are set in order to obtain the minimum enthalpy of the friction coefficient, in reality, the friction coefficient is often slightly larger than the minimum enthalpy. The so-called elastic fluid lubrication is equivalent to, for example, when the automobile is traveling on a wet road, the tire and the road have almost no friction, and even if the tire is stepped on, the road is slipped. Therefore, the term "the number of rotations at which the elastic fluid can be obtained" in the present invention means the number of rotations that can perform such an action. After the brush portion 50 is pressed against the glass substrate 6 for a predetermined time, for example, 10 seconds, the susceptor 63 is raised to a predetermined height position by the elevating mechanism 27 as shown in Fig. 7(d), and the brush portion is raised. 50 leaves the aforementioned glass substrate 6. Then, after repeatedly performing a series of operations described in FIGS. 7(b) to 7(d), for example, 5 times, -20-201005852 stops the supply of the cleaning liquid R and the rotation of the brush portion 50, The cleaning operation of the brush unit 50 is completed. On the other hand, the wafer W which has finished the cleaning process of the back surface is transferred from the spin chuck 3 to the support pin 32, and then transferred to the transport means by the operation of the support pin 32 and the transport means. Then, the wafer W is sent to the subsequent exposure device, and the unprocessed wafer W is carried into the cleaning device 2 〇φ. After the cleaning operation of the brush portion 50 is completed, the retainer 23 is raised by the lifting mechanism 27. The lower peripheral surface of the upper cup 4 1 does not hit the upper surface of the brush portion 50, and the cleaning member 5 is moved to the washing area of the wafer W by the drive mechanism 60. Then, the wafer W newly loaded into the cleaning device 2 is started to perform the same back surface cleaning operation as described above. The process of washing the above brush portion 50 is performed by the brush cleaning program 92. Further, when the cleaning operation of the brush portion 50 is started, the brush cleaning program 92 may be configured without being limited to the above-described form, and the brush may be automatically selected once the predetermined number of wafers W are washed. In the cleaning mode, when the brush portion 50 is exchanged, the used brush portion 50 is removed from the support body 52 via the susceptor 51, and then the unused brush portion 50 is attached to the brush portion 50 via the susceptor 51. After the support 52, for example, the operator selects the brush cleaning mode by the input means 94 to perform the cleaning operation of the brush portion 50 similar to that described above. When the number of times of cleaning by the brush portion 50 is repeated, the back surface of the glass substrate - 6105055 is gradually contaminated by the organic matter adhering to the brush portion 50, and the back surface is hydrophobized. The wetness deteriorates. Therefore, when the number of times of cleaning of the brush portion 50 is set to a predetermined number of times, when the brush portion 50 washes the back surface of the wafer W, ultraviolet rays are irradiated from the ultraviolet lamp 62 toward the glass substrate 6, thereby being removed from the back surface. The organic matter or the like can be subjected to a treatment for hydrophilizing. The process of performing this process is carried out in the process of the brush cleaning program 92. According to the above embodiment, the cleaning member 5 that has washed the wafer W is moved to the region where the brush portion 50 is washed by the glass substrate 6 in the region where the wafer W is cleaned, and is washed in this region. Since the brush portion 50 is cleaned, the operation of the dummy wafer can be performed without stopping the cleaning process of the wafer, and the wafer W flowing to the cleaning device 2 can be continuously stopped without stopping the wafer W. Washed. In the cleaning operation of the brush portion 50 of the cleaning member 5, the cleaning liquid R is discharged from the discharge hole 54 formed on the upper surface of the brush portion 50 at a predetermined flow rate, and while the brush portion 50 is rotated, The brush portion 50 is pressed against the glass substrate 6 by the preset pressing force to wash the brush portion 50, so that the brush portion 50 can be washed in a short time. By this effect, the productivity of the crystal is improved. Further, in the above-described embodiment, the number of rotations of the elastic fluid lubrication is obtained in the stribeck graph showing the lubrication state of the brush portion 50 and the glass substrate 6, and in this embodiment, the rotation speed is 70 rpm to 500 rpm. V rotates the brush portion 50, in other words, the brush portion -22-201005852 50 is washed in a state where the cleaning liquid R is interposed between the brush portion 50 and the glass substrate 6, so that the brush portion 50 and the glass substrate 6 are not provided. Rubbing causes the brush portion 50 to be damaged. Therefore, the service life of the brush portion 50 becomes long. Further, in the above-described embodiment, the upper surface of the brush portion 50 is pressed against the bottom surface of the glass substrate 6 by the elevating mechanism 27, but the driving mechanism 53 for rotating the brush portion 50 in the circumferential direction has the intervening support body 51. The brush portion 50 can be moved up and down, and the upper surface of the brush portion 50 is pressed against the bottom surface of the glass substrate 6 by the drive mechanism 53. φ In the above embodiment, the cleaning liquid R is formed. The discharge hole 54 in the substantially central portion of the upper surface of the brush portion 50 is discharged to wet the lower surface of the glass substrate 6. However, the present invention is not limited to this configuration, and may be configured to form a discharge at a substantially central portion of the lower surface of the glass substrate 6. The hole is discharged, and the cleaning liquid R is discharged from the discharge hole to wet the lower surface of the glass substrate 6. Next, another embodiment of the present invention will be described. In this embodiment, as shown in Fig. 10 and Fig. 11, except that the glass substrate 82 is moved between the region where the wafer W is cleaned by the cleaning member 5 and the standby region away from the region, The cleaning device 2 described in the above embodiment has exactly the same configuration. When the configuration of this embodiment is described in detail, the element symbol 80 in the first and fourth figures is a rail portion that is provided in parallel with the bridge portion 22b. Both ends of the rail portion 80 are fixed to the lower side. Above the cup 43. Further, the above-described rail portion 80 in the example is disposed when the cleaning member 5 is used to clean the back center region of the wafer W and when the retainer 23 is moved to the predetermined position, is disposed so as not to collide with the bridge portion 22b. position. A moving mechanism 83 that moves the glass substrate 82 toward the Y-axis -23 - 201005852 is provided on the rail portion 8 . A drive portion 85 that sandwiches the guide shaft 84 to drive the glass support 81 upward and downward is provided on the proximal end side of the glass support 81. Further, on the front end side of the glass support body 81, a drive portion 87 for sandwiching the guide shaft 86 to drive the glass substrate 82 upward and downward is provided. The drive unit 85 is provided for raising the glass support 81 to a predetermined height position when the retainer 23 is raised by the drive unit 27 to prevent the guard ring 23 from colliding with the glass support 81. Once the effect in this form is described, after the wafer W is cleaned by the cleaning member 5 as described above, the glass substrate 82 is moved by the moving mechanism 83 so that the lower surface of the glass substrate 82 is The brush portion 50 of the cleaning member 5 faces each other (see Fig. 11). Then, the glass substrate 82 is lowered by the driving portion 87 by the interposing shaft 86 so that the distance between the brush portion 50 and the glass substrate 82 becomes a predetermined distance. Thereafter, the cleaning liquid R is discharged from the discharge hole 54 formed on the upper surface of the brush portion 50 at a predetermined flow rate, and the back surface of the glass substrate 82 is wetted, and the brush portion 50 is set in advance by the drive mechanism 53. A good number of rotations to rotate. Thereafter, the glass substrate 82 is lowered by the driving portion 87 so that the back surface of the glass substrate 82 comes into contact with the upper surface of the brush portion 50. Further, it is adjusted such that the glass substrate 82 is lowered and the brush portion 50 is pressed against the glass substrate 82 with a predetermined pressing force. Then, in the same manner as described above, the brush portion 50 is washed in a state where the cleaning liquid R is interposed between the brush portion 50 and the glass substrate 82. Even in such a state, the same effect as described above can be obtained. Next, a description will be given of an example in which the above-described cleaning device 2 is applied to a coating and developing device. Fig. 12 is a plan view showing a system for connecting an exposure apparatus to a coating device, and Fig. 13 is a perspective view of the system. Further, Fig. 14 is a longitudinal sectional view of the system. In the coating and developing device, a carrier block S1 is provided, and the transfer robot C takes out the wafer w from the sealed carrier 100 placed on the mounting table 101 and delivers it to Processing block S2, the transfer robot C receives the processed wafer w from the processing block S2 and sends it back to the carrier 100. In the cleaning device 2 of the present embodiment, when the wafer W is transferred from the processing block S2 φ to the exposure device 4, as shown in Fig. 12, the processing is performed at the entrance of the interface block S3. The back side of the wafer W is cleaned. As shown in Fig. 13, the processing block S2 is stacked in the first block (DEV layer) B1, the second block (BCT layer) B2, and the third block (COT) in this example from bottom to top. a layer B3 and a fourth block (TCT layer) B4, wherein the first block (DEV layer) B1 is used for development processing; the second block (BCT layer) B2 is used for forming photoresist The formation of the anti-reflection film on the lower layer side of the film φ film; the third block (COT layer) B3 is used for coating the photoresist film; the fourth block (TCT layer) B4 is used to form The reflection preventing film is formed on the layer side of the photoresist film. The second block (BCT layer) B2 and the fourth block (TCT layer) B4 are respectively composed of a coating unit, a heating/cooling processing unit group, and transport robots A2 and A4, wherein the coating unit is The chemical solution for forming each of the anti-reflection films is applied by spin coating (spin coating); the processing unit group of the heating/cooling system is used for performing the processing by the coating unit - 25 - 201005852 Pre-processing and post-processing; the transport robots A2 and A4 are disposed between the coating unit and the processing unit group, and the wafer W is transferred between the units. The third block (COT layer) B3 has the same configuration except that the chemical liquid is a photoresist liquid. On the other hand, regarding the first block (DEV layer) B1, as shown in FIG. 14, a two-layer developing unit is stacked in one DEV layer B1, and then in the DEV layer B1, it is provided to use the wafer. W is transported to the transport robot A1 of the developing unit 110 of the two layers. In other words, the transport robot A1 is configured to be common to the two-layer developing unit 110. Further, in the processing block S2, a scaffolding unit U5 is provided as shown in FIGS. 13 and 14, and the wafer W from the carrier block S1 is connected to a transfer unit of the scaffolding unit U5, for example. The delivery unit D1 corresponding to the second block (BCT layer) B2 is sequentially transported. Then, the wafer W is transported from the transfer unit CPL2 to the respective units (the anti-reflection film unit and the processing unit group of the heating/cooling system) by the transfer robot A2' in the second block (BCT layer) B2, and is utilized. After the units are formed to form the anti-reflection film, the wafer W is transferred to the first transfer robot D1 and the scaffold unit U5 which are disposed at the vicinity of the scaffold unit U5 via the delivery unit BF2 of the scaffolding unit U5. The transfer unit CPL3 and the transfer robot A3 are carried into the third block (COT layer) B3' to form a photoresist film. Further, the wafer W is transferred to the delivery unit BF3 of the transport robot boom unit U5. Further, the wafer W on which the photoresist film has been formed may have a case where the anti-reflection film is further formed in the fourth block (TCT layer) B4 of 201005852. In this case, the wafer W is transferred to the transport robot A4 via the delivery unit CPL4, and is transferred to the delivery unit TRS4 by the transport robot A4 after the anti-reflection film has been formed. On the other hand, in the upper portion of the DEV layer B1, a shuttle robot E as a transport means for exclusively feeding the wafer W from the transfer unit CPL1 1 provided in the scaffold unit U5 is provided. Directly transported to the transfer unit CPL 12 where φ is placed in the scaffolding unit U6. The wafer W on which the photoresist film or the anti-reflection film is further formed is received from the transfer units BF3, TRS4 via the transfer robot D1 and transferred to the transfer unit CPLU, and is directly used by the shuttle robot E from here. Transfer to the delivery unit CPL1 2 of the scaffolding unit U6. Here, as shown in Fig. 12, the transfer robot D2, which is provided as a transport means between the scaffolding unit U6 and the cleaning device 2, is configured to be rotatable, advancing and retracting, and freely movable, and is provided separately before and after being separately transported and washed. For example, two robot arms of the wafer W. The wafer W is taken out from the TRS 12 by a robot arm dedicated to cleaning before the transfer robot D2, and transported to the cleaning device 2 to receive the back surface cleaning operation. The wafer W after the completion of the cleaning operation is placed on the TRS 13 by the robot arm dedicated for cleaning after the transfer robot D2, and is taken in the interface block S3. Further, the transfer unit with the CPL attached to Fig. 14 serves as a cooling unit for temperature adjustment, and the transfer unit with BF is also used as a buffer unit for the wafer W on which a plurality of films can be placed. Then, it is transported to the exposure device S4 by the interface robot B, and after the predetermined exposure process is performed, it is placed on the -27-201005852 of the scaffolding unit U6 and connected to the unit TRS 6 and sent back to the processing block S2. . Next, the wafer W is subjected to development processing in the first block (DEV layer) B1, and returned to the transfer robot C0 in the rack unit U5 by the transport robot A1. Further, U1-U4 in Fig. 12 are heat-unit groups in which a heating unit and a cooling unit are stacked, respectively. Further, in the coating and developing apparatus shown in Figs. 12 to 14, the example in which the cleaning device 2 of the embodiment is provided at the inlet portion of the interface block S3 is shown, but the position of the cleaning device 2 is provided. It is not limited to this example. For example, the cleaning device 2 may be provided in the interface block S3, or the inlet portion provided in the processing block S2, for example, the scaffolding unit U5, may be used to perform backside cleaning of the wafer W before the photoresist film is formed. Or set in the carrier block S1. Further, the apparatus to which the cleaning apparatus 2 of the present embodiment is applicable is not limited to the coating and developing apparatus. For example, the cleaning device 2 can be applied to a heat treatment apparatus that performs an annealing step after ion implantation. When the annealing step is performed in a state in which fine particles are adhered to the back surface of the wafer W, fine particles are allowed to enter from the back surface of the wafer W in this step, and a current path is formed between the fine particles and the surface transistor. Therefore, the wafer W can be back-cleaned before the process to improve the yield of the article. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a cleaning device of the present invention. Fig. 2 is a plan view of the above cleaning device. Fig. 3 is a longitudinal sectional view of the above washing apparatus. -28- 201005852 Fig. 4 is a longitudinal sectional view of the above washing apparatus. Fig. 5 is a perspective view showing the configuration of a washing brush. Fig. 6 is a block diagram showing a control unit according to an embodiment of the present invention. Fig. 7 is a view showing a process for the operation of the cleaning device. Fig. 8 is an explanatory view showing a state in which the cleaning member is washed. Fig. 9 is a stribeck graph showing the lubrication state of the cleaning member and the glass substrate. Fig. 10 is a plan view showing an embodiment of a coating and developing apparatus which is applied to the above-described cleaning apparatus. Fig. 11 is a perspective view showing a washing apparatus according to another embodiment of the present invention. Fig. 12 is a plan view showing a washing apparatus according to another embodiment of the present invention. Figure 13 is a perspective view of the above coating and developing device. Fig. 14 is a longitudinal sectional view of the above coating and developing device. 0 Figure 15 shows a schematic longitudinal cross-sectional view of a conventional cleaning device. [Description of main component symbols] W _·Semiconductor wafer 2: Cleaning device 20a > 20b: Adsorption pads 21a, 21b: Pad support portions 22a, 22b: Bridge portion 23: Retaining ring -29-201005852 27: Lifting mechanism 3 : Rotating chuck 41 : Upper cup 5 : Washing brush 5 0 : Washing member 5 1 : Base 52 : Supporting body 53 : Driving mechanism 5 4 : Discharge hole 5 5 : Flow tube 5 6 : Temperature adjusting portion 5 7 : Cleaning liquid supply source 58 : Belt 6 : Glass substrate 60 : Driving mechanism 6 2 : Ultraviolet lamp 9 : Control section -30-