201002460 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種形成於脆性材料基板之端面之邊緣 線（稜線）的去角加工方法，進一步詳細而言係關於藉由雷射 束之照射進行邊緣線之尺面去角或c面去角的去角加工方 法及去角加工裝置。 此處，除了玻璃基板以外，加工對象之脆性材料基板 包含石英、單晶矽、藍寶石、半導體晶圓、及陶瓷等基板。 【先前技術】 玻璃基板等脆性材料基板係藉由加工成所欲之尺寸' 形狀而使用於各種製品。一般而言，脆性材料基板之加工 雖藉由切割（diClng)、刀輪劃線（wheei scribe)、雷射劃線 (laser scribe)等既有之加工技術來進行，不過藉由此等加工 ，術斷開之基板端面的邊緣線係非常銳利，即使是施加些 微之衝擊亦會產生破裂（chiPPing)或微裂（microcrack)等缺 陷例如，在平面顯示器（FPD)用之玻璃基板中，因邊緣缺 角所產生之破片會在FpD用基板之表面導致損傷，而對產 品之良率造成影響。 因此，為了防止在斷開基板後所產生之基板之邊 分的缺損算，後 _ 、 係邊緣線進行去角加工。 ~邊 在藉 小裂 、4之去角加工之一係有一種濕式研磨法，其 仏應大1之水—邊藉由金剛石磨石進行鈇 由濕式研磨法所丑，二、1匕 Μ 斤形成之去角加工面，會連續殘留 4 201002460 ®之強度較周圍顯著降低 痕，而使去角 相對於此，已提出一種力轨 & , 热；融法，其係沿欲進行去 角加工之邊緣線掃瞒雷射走 直立 田射束亚沿邊緣線移動雷射束之隹 點而將邊緣上予以加埶熔融 … ”、、浴蛐以進仃去角。另揭示有一種方 法（參照專利文獻1 )，其 具係在將例如破璃構件整體保持（預熱） ;車乂常溫咼之溫度的狀態下， ^ ”、' 使稜線部軟化而加以圓化來進行去角。 …、 。纟表丁使用co2雷射光源藉由加熱炫融法進行去 :加工時之雷射照射狀態的截面圖。預先使用未圖示之加 =將玻璃基板1G整體逐漸加熱至較軟化溫度低之既P 度’接著沿欲進行保持於既^溫度之玻璃基板1G之去^ 工的邊緣線51，II由聚光透鏡53將來自c〇2雷射光源5〇 之雷射光予以聚光，將焦點對準於加工部分附近並進行掃 描、。此時’藉由調整雷射輸出、掃描速度，使經雷射照射 之邊緣部分變成高温而軟化，藉此加工成使經雷射照射 邊緣部分帶圓狀。 此捋，在預熱及加工後之冷卻會耗費時間。又，必喟 將基板整體㈣m板上已形成無法加# = 、。4功迠膜的情況下，有時無法實施此方法之去角加 工。又，若預熱不夠充分則會因熱應力產生破裂（裂痕）， ’、’、去進行良好之去角加工。再者，上述加熱熔融法之 加工φ > + 月 y，有％熔融部分會變形導致其一部分（帶圓狀之部分 的一部分）較周圍鼓起，而損及基板端面之平坦度。 作為異於加熱熔融法、無須預熱之雷射照射的去角方 201002460 法’已揭示有一種雷射劃線法(專利文獻2)，其係藉由將雷 射光照射於邊緣附近來進行加熱，使玻璃基板ι〇產生裂 痕，並藉由使雷射光相對掃描於邊緣線方向，而使裂痕= 邊緣線成長，從玻璃基板分離邊緣附近以進行去角。 圖9表示使帛C〇2雷射光源藉由雷射劃線進行去角加 工時之雷射照射狀態的圖。藉由聚光透鏡53將來自c…雷 射光源5G之雷射光局部照射於玻璃基板1()之邊緣線η附 近，以較軟化溫度低之溫度進行加熱。此時，因隨著局部 熱膨脹所造成之熱應力而產生裂# 52。接著，藉由使雷射 光沿邊緣線51掃描，依序所產生之裂痕52即沿邊緣線 成長，即可分離包含邊緣線51之邊緣附近（角部分）。 根據專利文獻2，藉由進行雷射劃線之去角加工，即可 在不損及玻璃基板之精度下，實施高生產性且無須洗淨步 驟之去角加工。 專利文獻1 :曰本特開平2 — 24 1 684號公報 專利文獻2:日本特開平9一 225665號公報 【發明内容】 工所形成之加工面 射劃線進行去角加 此處’針對藉由雷射劃線之去角加 作說明。圖1 〇係藉由使用c〇2雷射之雷 工時之加工載面的放大圖。 藉由去角加工，玻璃基板10之角部分U即被分離（剝 離），玻璃基板10之邊緣線53雖會與角部分U 一起消失， 但卻另外形成去角加工面5 4。 6 201002460 右觀察此去角加工面54之截面形狀，則於玻璃基板1〇 '”有凹陷之圓弧狀的逆R面。去角加工面54凹陷之結 在/、破璃基板S之基板表面55, 50交叉的部分，即形 成個邊緣線5入58。若相較於原來之邊緣線53，此等邊 々二线，5 8之邊緣之尖銳度雖已有改善，不過即使如此凹 陷右變大時，則亦會形成銳利之邊緣。 特別疋在平面顯示器用（FPD用）玻璃基板中，於緊鄰邊 2 : 57: 58之上方有時會配置有TAB捲帶之配線，在去角 後’若於該部分殘留有銳利之邊緣時，造成TAB捲 帶斷線之可能性便會變高。 分开去角加工面54係被要求消除凹陷且須將去角部 '成為屬平面之斜面C面或朝向外側呈凸狀 之去:：’上述習知之使用-雷射之雷射劃=形成 角加工面54總是會在去角加工 照射於邊绫蠄u 座生凹陷。即使改變 逯·.彖線53之雷射的照射方向， 難以控制去角加工面之形狀。 大致相同’而 較二=广平面顯示器(FPD)用玻璃基板等中，係使用 板之加工品基Γ隨著玻璃基板之大型化，對基 對去角加工面μ 目前更高之精度或可靠性。針 因此，Γ形狀，亦要求較目前更高之精度與可靠性。 發明之目的係在於提供一種去 其可將雷射照射所形成……，去角加工裝置， 〜、^、或朝::二 成為非逆…為 4朝向外侧呈凸狀之曲面。 為了解決上述課題而構成之本發明之去角加工裝置， 7 201002460 係使用特殊之光學元件單元掃描雷射束之聚^，以 成為C面、R面、朝向基板外側 、 廿扣丄於 曲面的去角加工。 亦即，本發明之去角加工裝置 之去角m特計^ u 係進仃脆性材料基板 ^… 在於，具備：雷射光源；聚光構件， 將從雷射光源放射之雷射束加以聚光並導至基板；射束偏 :部士係設於從雷射光源經由聚光構件而到達基板之雷射 之路上，使雷射束之射入光路偏向以使雷射束所形成 之聚先點的位置進行掃描；以及基板支#部，係將基板支 撐成，對供進行去角加卫之邊緣線，彳足以邊緣線為端邊之 兩個相鄰面之斜前方朝向邊緣線照射雷射I，以使該聚光 點沿與邊緣線交叉之面掃描邊緣線附近之基板表面或基板 内部；聚光構件’係、由具有在與邊緣線交又之面形成之聚 光點之掃描軌跡從聚光構件觀看時成凹狀或直線狀的光學 參數的光學元件單元構成。 此處，脆性材料基板包含玻璃基板、石英基板、矽基 板、藍寶石基板、矽或其他半導體晶圓、及陶瓷基板。 又，雷射光源會因雷射光之波長不同而使基板之吸收 特性不同，因此可根據基板種類、是從基板表面掃描或是 掃描基板内部，選擇所使用之雷射光源。 例如對於玻璃基板，當掃描表面附近時最好使用基板 材料吸收係數大之C〇2雷射或co雷射（其中，掃描基板表 面時只要可使雷射聚光亦能使用吸收小之雷射）。另一方 面’在掃描基板内部時，最好使用基板材料吸收係數小之 YAG雷射（Nd — YAG雷射、Er — YAG雷射等）。 8 201002460 具體而令，也丨丄+ 1 例如在玻璃基板可使用波長為從193nm至 1 064nm之堂身+ a “201002460 VI. Description of the Invention: [Technical Field] The present invention relates to a method for chamfering an edge line (ridge line) formed on an end surface of a brittle material substrate, and more particularly relates to irradiation by a laser beam A chamfering processing method and a chamfering processing device for performing a facet chamfering or a c-plane chamfering of an edge line. Here, in addition to the glass substrate, the brittle material substrate to be processed includes a substrate such as quartz, single crystal germanium, sapphire, a semiconductor wafer, or ceramic. [Prior Art] A brittle material substrate such as a glass substrate is used for various products by being processed into a desired size 'shape. In general, the processing of the brittle material substrate is performed by a conventional processing technique such as cutting (diClng), cutter scribe, and laser scribe, but by such processing, The edge line of the end face of the substrate that is broken is very sharp, and even if a slight impact is applied, defects such as chipping or microcrack may occur, for example, in a glass substrate for a flat panel display (FPD), due to the edge. The fragments produced by the missing corners cause damage on the surface of the FpD substrate and affect the yield of the product. Therefore, in order to prevent the defect of the edge of the substrate which is generated after the substrate is broken, the trailing edge and the edge line are subjected to the chamfering process. ~ One side of the processing of the small crack, 4 corners of the processing has a wet grinding method, which should be the water of the big one - while the diamond grinding stone is used to smash by the wet grinding method, two, one 匕去 斤 斤 forming the chamfered processing surface, will continue to remain 4 201002460 ® intensity is significantly lower than the surrounding, and the degaussing relative to this, has proposed a force rail &heat; melting method, its system is going The angle processing edge line sweeping laser strikes the vertical field beam sub-edge along the edge line to move the laser beam to the point and the edge to be twisted and melted...", the bath is used to enter the corner. Another method is disclosed (refer to Patent Document 1), for example, in a state where the entire glass member is held (preheated) and the temperature of the rut is normal temperature, the ridge line portion is softened and rounded to perform chamfering. ..., . The enamel watch is performed by a heating and scattering method using a co2 laser light source: a cross-sectional view of the laser irradiation state during processing. In advance, the glass substrate 1G is gradually heated to a level P which is lower than the softening temperature, and the edge line 51 which is to be held at the temperature of the glass substrate 1G is used in advance. The optical lens 53 condenses the laser light from the c〇2 laser light source 5〇, and focuses on the vicinity of the processed portion to perform scanning. At this time, the edge portion of the laser irradiation is softened by adjusting the laser output and the scanning speed, thereby being processed so that the portion irradiated with the laser is rounded. Therefore, cooling after preheating and processing takes time. In addition, it is necessary to add # = , to the entire substrate (4) m plate. In the case of 4 power film, it is sometimes impossible to perform the chamfering process of this method. Further, if the preheating is insufficient, cracking (cracking) occurs due to thermal stress, and ',' is performed to perform good chamfering. Further, in the processing of the above-described heat-melting method φ > + y, the %-melted portion is deformed so that a part thereof (a part of the round portion) bulges from the periphery, and the flatness of the end surface of the substrate is impaired. A laser scribing method (Patent Document 2) has been disclosed as a laser scribing method (Patent Document 2) which is different from the heating and melting method and the laser irradiation without preheating, and is heated by irradiating the laser light near the edge. The glass substrate ι is cracked, and by causing the laser light to be scanned in the edge line direction, the crack = edge line is grown, and the edge is separated from the glass substrate to be chamfered. Fig. 9 is a view showing a state of laser irradiation when the 帛C〇2 laser light source is subjected to the deangulation processing by laser scribing. The laser light from the c-light source 5G is locally irradiated by the condensing lens 53 to the vicinity of the edge line η of the glass substrate 1 (), and is heated at a temperature lower than the softening temperature. At this time, crack #52 is generated due to thermal stress caused by local thermal expansion. Then, by scanning the laser light along the edge line 51, the cracks 52 sequentially formed, i.e., growing along the edge line, separate the edges (corner portions) including the edge lines 51. According to Patent Document 2, by performing the chamfering process of the laser scribing, it is possible to carry out the chamfering process which is highly productive and does not require a washing step without impairing the accuracy of the glass substrate. Patent Document 1: Japanese Patent Application Laid-Open No. Hei No. Hei 9-225665 (Patent Document 2) Japanese Laid-Open Patent Publication No. Hei 9-225665. The declination of the laser line is added for explanation. Figure 1 is an enlarged view of the processing surface of the ray by using the c〇2 laser. By the cornering process, the corner portion U of the glass substrate 10 is separated (peeled off), and the edge line 53 of the glass substrate 10 disappears together with the corner portion U, but the chamfered surface 51 is additionally formed. 6 201002460 When the cross-sectional shape of the chamfered surface 54 is observed from the right, the glass substrate 1〇'” has a concave arc-shaped reverse R surface. The chamfered surface 54 is recessed and the substrate of the glass substrate S is recessed. The portion where the surfaces 55, 50 intersect, that is, the edge line 5 is formed into 58. If compared with the original edge line 53, the sharpness of the edge of the edge is improved, but even if it is so concave When it becomes larger, it will also form a sharp edge. Especially in the glass substrate for flat panel display (FPD), the wiring of the TAB tape may be arranged on the side immediately above the side 2: 57: 58. After 'there is a sharp edge left in this part, the possibility of breaking the TAB tape will become higher. Separate the chamfering surface 54 is required to eliminate the depression and the dehorning part must be a flat bevel The C-face or the outward direction is convex:: 'The above-mentioned use--the laser strike of the laser = forming the angled working surface 54 will always be irradiated on the edge 绫蠄u seat recess in the chamfering process. Even if it changes 逯·. The direction of the laser of the 53 line 53 is difficult to control the shape of the chamfered surface In the case of a glass substrate or the like for a flat panel display (FPD), the substrate is processed to have a higher precision with respect to the base-angled processing surface μ as the glass substrate is enlarged. Reliability. The needle therefore requires a higher precision and reliability than the current one. The object of the invention is to provide a laser that can be formed by laser irradiation, ..., an angle-cutting device, ~, ^, or The second: is a non-reverse... a curved surface that is convex toward the outside. The chamfering apparatus of the present invention configured to solve the above problems, 7 201002460 uses a special optical element unit to scan a laser beam. The chamfering process of the C-plane, the R-plane, the outer side of the substrate, and the buckle is applied to the curved surface. That is, the chamfering device of the chamfering apparatus of the present invention is integrated into the brittle material substrate. Having: a laser source; a concentrating member, concentrating the laser beam radiated from the laser source and guiding it to the substrate; beam deflection: the ray is set at a lightning flux from the laser source to the substrate via the concentrating member Laser beam The entrance optical path is deflected to scan the position of the convergence point formed by the laser beam; and the substrate support portion supports the substrate to be edge-lined for the degaussing edge The oblique front of the two adjacent faces illuminates the laser beam I toward the edge line such that the spot is scanned along the surface intersecting the edge line to scan the surface of the substrate or the inside of the substrate near the edge line; the concentrating member is The scanning trajectory of the condensed spot formed by the surface intersecting the edge line is formed by an optical element unit having a concave or linear optical parameter when viewed from the concentrating member. Here, the brittle material substrate includes a glass substrate, a quartz substrate, and a crucible. a substrate, a sapphire substrate, a germanium or other semiconductor wafer, and a ceramic substrate. Further, since the laser light source has different absorption characteristics of the substrate due to the difference in wavelength of the laser light, it can be scanned or scanned from the substrate surface depending on the type of the substrate. Inside the substrate, select the laser source to be used. For example, for a glass substrate, it is preferable to use a C〇2 laser or a co-laser having a large absorption coefficient of the substrate material when scanning the vicinity of the surface (wherein, when the surface of the substrate is scanned, it is also possible to use a small laser to absorb the laser light. ). On the other hand, when scanning the inside of the substrate, it is preferable to use a YAG laser (Nd-YAG laser, Er-YAG laser, etc.) having a small absorption coefficient of the substrate material. 8 201002460 Specifically, 丨丄+ 1 For example, a glass substrate can be used with a wavelength from 193 nm to 1 064 nm + a "
_ 帝 射’雷射光源則可使用Nd— YAG雷射、ArF 準刀子田射、及KrF準分子雷射等。又，例如在石夕基板可 使用波長為UOS以上之雷射。 … 作為聚光構件之光學元件單元能使用透 =鏡單元。-般而言，透鏡單元中可藉由調整其折射ί =布龙透鏡曲面形狀，反射鏡單元可藉由調整其反射面形 來設計射出光相對於射入透鏡單元、反射鏡單元之射 入光的光路方向戋 ⑽ 4先點。因此，用於本發明之光學元件 早疋（透鏡單元、及鉍於@ 射鏡早70 )之光學參數，能使用藉由射束 ==入光路偏向時藉聚光構件形成之聚光點之掃描 ^ ㈣件觀看時成凹狀或直線狀的光學參數者。此 外，用以取得上述掃描軌^ ^ ^ ^ ^ ^ ^ ^ ^ ^ — 尤学參數，可藉由進行幾何 β限凡素法之分析、或試行錯誤之設計來求出。 人透η Α處所私之光學^件單元並非單透鏡，而係如組 。透鏡般作成將複數個透鏡或反射鏡串聯排列的構造，藉 A件整體亦包含聚光點之掃描軌跡從聚光構件 成凹狀者。 :據本發明，係將光學系統配置成，從雷射光源放射 雷射束經由射束偏向部、聚光構件，而對供進行基板之 ，角加m線從基板之斜前方方向照射。射 =係使從雷射光源放射之雷射光束對聚光構件的射入光 =向。聚光構件因射入光路藉射束偏向部而偏向，從聚 構件射出之雷射光束的行進方向亦偏向。其結果，声由 9 201002460 從4光構件射出$愛 雷射束而形成之聚光點的位置， 板之邊緣線附近掃描。〇 係在基 光學參數（在與邊绫结六^ 從用具有一 面形成之聚光點之掃描軌跡從 聚先構件規看時成凹狀或直線狀的光學參數）的光學元件單 因此邊緣線附近之聚光點之掃描執跡從聚 時成凹狀或直線狀。接著，使以 者使聚先點在基板表面或基板内 :田，p會沿其執跡產生剝離熔融現象，而沿聚光點 掃描軌跡^去基板之—部分。因&，當掃描軌跡為直線狀 時’即進行c面之去角加工，當掃描執跡從聚光構件觀看 成：狀時’即進行對應該凹狀決定之R面、拋物面、橢圓 面等之凸狀的去角加工。 、根據本發明，可將藉由雷射照射所形成之去角加工面 开v成為C面、R面、或朝向外側呈凸狀之曲面。 上述發明中，聚光構件亦可係由f0透鏡或^反 構成之光學元件單元。 兄 將聚光構件作成由f(9透鏡或f(9反射鏡構成之光學元 件單兀吩之聚光點之掃描執跡由於成直線狀，因此能進行C 面之去角加工。 上述發明中，聚光構件亦可係將非遠心之f 0透鏡與平 面平行板組合而成的光學元件單元。 將聚光構件作成非遠心之透鏡與平面平行板組合 而成的光學元件單元時之聚光點之掃描執跡由於係朝向基 板外側成凸狀’因此能進行該凸狀之去角加工。 上述發明中，亦可具備使基板側或雷射束侧移動以使 201002460 .玄聚光點沿該邊緣線相對移動之移送機構。 猎此，可沿邊緣線進行邊緣線整體之去角加工。 羊之平：：月亦可為’該基板支撐部係由將基板裝載成水 對觉成’該聚光構件及射束偏向部，係配置成以相 之基板之邊緣線傾斜45度的方向為尹心方向 使u聚先點掃描於該邊緣線。_ Emperor's laser source can use Nd-YAG laser, ArF quasi-knife field, and KrF excimer laser. Further, for example, a laser having a wavelength of UOS or higher can be used for the Shih-hs. ... As the optical element unit of the concentrating member, a transparent mirror unit can be used. In general, in the lens unit, by adjusting the refractive ί = Bron lens surface shape, the mirror unit can adjust the reflection surface shape to design the injection light to be injected with respect to the injection lens unit and the mirror unit. The direction of the light path of the light 10 (10) 4 first point. Therefore, the optical parameters used in the optical element of the present invention (the lens unit, and the aperture of the lens 70) can be used by the condensing point formed by the condensing member when the beam is deflected into the optical path. Scan ^ (four) pieces of optical parameters that are concave or linear when viewed. In addition, the parameters for obtaining the above-mentioned scan track ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ - can be obtained by analyzing the geometric β-limit method or designing the trial error. The optical unit that the person wears through is not a single lens, but is like a group. A lens is formed in a structure in which a plurality of lenses or mirrors are arranged in series, and the scanning trajectory of the condensed spot is also concave from the condensing member. According to the invention, the optical system is arranged such that the laser beam is radiated from the laser light source via the beam deflecting portion and the condensing member, and the substrate is supplied with the m-line at an angle obliquely forward from the substrate. Shot = is the incident light of the laser beam emitted from the laser source to the concentrating member. The condensing member is deflected by the incident optical path by the beam deflecting portion, and the traveling direction of the laser beam emitted from the collecting member is also biased. As a result, the position of the condensed spot formed by the projection of the $-ray beam from the 4-light member by 9 201002460 is scanned near the edge line of the panel. The optical component of the enthalpy in the base optical parameter (in the optical parameter of the concave or linear shape when viewed from the poly-front member by the scanning trajectory of the condensing point formed by one side) The scanning traces of the nearby spotlights are concave or linear from the time of gathering. Next, the other is placed on the surface of the substrate or in the substrate: p, which will cause the peeling and melting phenomenon along the track, and scan the track along the spot to remove the portion of the substrate. Because &, when the scanning trajectory is linear, the c-plane chamfering is performed, and when the scanning trajectory is viewed from the concentrating member: the R-plane, the paraboloid, and the elliptical surface corresponding to the concave shape are determined. Wait for the convex shape of the chamfering. According to the present invention, the chamfered surface formed by the laser irradiation can be a C-plane, an R-plane, or a curved surface which is convex toward the outside. In the above invention, the concentrating member may be an optical element unit composed of an f0 lens or an inverse. The concentrating member is made of f (9 lens or f (9-mirror optical element single loupe), and the scanning trace of the light-converging point is linear, so the C-plane can be chamfered. The concentrating member may be an optical element unit in which a non-telecentric f 0 lens and a plane parallel plate are combined. Concentration when the concentrating member is formed as an optical element unit in which a non-telecentric lens and a plane parallel plate are combined Since the scanning trace of the dot is convex toward the outer side of the substrate, the convex chamfering process can be performed. In the above invention, the substrate side or the laser beam side may be moved to make the 201002460. The edge line is relatively moved to the transfer mechanism. Hunting, the edge line can be completely chamfered along the edge line. The sheep flat:: month can also be 'the substrate support is made by loading the substrate into water pair' The concentrating member and the beam deflecting portion are arranged such that the direction in which the edge line of the phase substrate is inclined by 45 degrees is the direction of the Yin direction, and the u concentrating point is scanned on the edge line.
下進精可在將基板穩定地裝載於水平之平台上的狀態 下進仃去角加工。 U 心/述發明中’射束偏向部亦可係藉由電流鏡或多面鏡 構成。 當為電流鏡時，可藉由反射鏡之擺動運動，又， :面：時可藉由反射鏡之旋轉運動’藉此均 ：機 構正確且以良好再現性使朝向聚光構件之雷射束偏向。 上述發明中，亦可進一步具備深度調整機構，係藉由 使基板或該聚光構件之位置移 9 AV 杪纫於笛射束之照射方向，以 調整該聚光點於基板之深度方向的位置。 门 措此’能將聚光點於基板内之深度位置配 力預定深度進行去角加工，藉以進行所欲深度= 並使：产Π行較深之去角加工時，係進行淺去角加工， 並使冰度和緩地變化而進行較深之去角加工 整深度方向之掃描位置—邊從邊 由—邊調 終點，即能進行不過度極端之去角加工。 對移動 201002460 【實施方式】 以下，使用圖式針對本發明之實施形態作說明。此處， 係針對玻璃基板之去角 加工作說明。 此外，本發明當然並不限於以下說明之實施形態，在 不超出本發明之要旨的範圍係包含各種形態。 圖1係表示本發明之一實施形態之脆性材料基板之去 角加工装置LM的圖。圈2得矣千圓1 圃2係表不圖1之知描光學系統的放 去角加設有滑動平台2，其係沿平行設置於 後方：架台1上的一對導轨3,4,來回移動於圖丨之紙面前 便方向（以下稱為γ方向）。 螺浐"… ⑴於兩導軌3,4之間，係形成為 、干”後方向設置’而固定於該 則螺合於該螺桿5，葬由…土 勒十。2之支梓6 以社 藉由馬達（未圖示）使螺桿5正、逆轉，The lowering precision can be processed in a state where the substrate is stably loaded on a horizontal platform. In the U-heart/described invention, the beam deflecting portion may be constituted by a current mirror or a polygon mirror. In the case of a current mirror, the oscillating motion of the mirror can be used, and: the surface can be rotated by the mirror 'by the rotation of the mirror'; thereby: the mechanism is correct and the reproducibility of the laser beam toward the concentrating member Bias. In the above invention, the depth adjustment mechanism may be further provided by shifting the position of the substrate or the light collecting member by 9 AV to the irradiation direction of the flute beam to adjust the position of the light collecting point in the depth direction of the substrate. . The door can be used to perform the deburring process at a depth corresponding to the depth of the spot in the substrate, so as to perform the desired depth = and to make the deeper chamfering process And make the ice degree change slowly and carry out the deeper chamfering processing of the scanning position in the whole depth direction - the edge from the side to the side of the edge, that is, the exfoliation processing can be performed without excessive extremes. Mobile 201002460 [Embodiment] Hereinafter, embodiments of the present invention will be described using the drawings. Here, the working description is given for the chamfering of the glass substrate. It is a matter of course that the present invention is not limited to the embodiments described below, and various aspects are included in the scope of the invention. Fig. 1 is a view showing a chamfering material processing apparatus LM of a brittle material substrate according to an embodiment of the present invention. Circle 2 has a thousand rounds 1 圃 2 series is not shown in Figure 1. The sliding angle of the optical system is provided with a sliding platform 2, which is arranged in parallel at the rear: a pair of guide rails 3, 4 on the gantry 1 Move back and forth in the direction of the paper in front of the picture (hereinafter referred to as the gamma direction). Screws " (1) between the two rails 3, 4, formed into a dry "post-direction" and fixed to the screw screw 5, buried by ... Tuller 10. 2 The screw 5 is positively and reversely rotated by a motor (not shown).
W使滑動平台？、、八逡畆。，丄 W 十口2/°導執3,4來回移動於Y方向。 於滑動平台2上，水平之么 回移動於圖i之左右方…° 置成沿導執8來 7之支桿ίο，Λ· 下稱為X方向)。於固定在台座 由螺桿10正、a 藉由馬達9旋轉之螺桿10，藉 υ正、逆轉，台座7 g 於台座7上，設有用以二導軌8來回移動於X方向。 之調整的升降平二u 行高度方向(以下稱為Z方向) j邛降十台u、及裝 螭基板G係以水平之#能 及引失碩之吸附平台12,玻 時，欲進行i & 4 疋於该吸附平台12之上。此 人适仃去角加工之邊绦 後述雷Μ φ 〃 ELv係以朝向上方，且支撐成 疋田射束可從傾斜45度。 且叉保成 此外，玻璃基板〇係利。 攝〜機20及形成在基板之對 12 201002460 準標記（未圖示）進行定位，使邊緣線EL朝向γ方向。在基 板G為一定之情況下，亦可以預先將定位用導件設於吸二 平台12表面，使基板之一部分抵接於導件的方式進行定位。 於玻璃基板G之上方，安裝有雷射光源、13、電流鏡 14(射束偏向部）、及透鏡單元15(聚光構件）。電流鏡14與 透鏡單7G 15係構成掃描光學系統i 6。 雷射光源13係使用Nd ~ YAG雷射#、、盾^ , ACJ笛射先源。雷射光源13 係在xz面***出方向為朝向左斜下方45度。 電流鏡14係將反射鏡設置於從雷射光源13射出之雷 射束之光路上，以將雷射束射出至右斜下方，並藉由 鏡之擺動運動，使射束之射' h 更射束之射出方向在χζ面内偏向。此時之 2鏡14之擺動運動的範圍，係依據加卫對象物所要進行 之去角加工的角度範圍來調整。 =元15係將從電流鏡14射出之雷射束予以聚 而… 。又，藉由電流鏡14使射出方向偏向， 而知為雷射束往透鏡+ + u 早（15之射入位置的結果’從透鏡單 兀15射出之雷射束之聚光 邊緣線EL之面内）掃卜# 面内（亦即’正交於 呈凹” 從透鏡單元側觀看時 呈凹狀（朝向基板外側呈凸狀）。 點例如’如圖2所示，藉由電流鏡14之擺動運動 點之择描軌跡即成為^Fuu2ur()。動聚先 此處說明透鏡單元15之具體例。透鏡單元& 成將非遠心之透鏡與平面平 - 订板，，且合而成的透籍置 兀，而可將聚光點之掃描勅 边鏡早 田執跡汉成如上述連結F0, F1, F2之 13 201002460 弓瓜R0的形狀（朝向基板外侧呈凸狀）。 電流鏡14與透鏡單元係固定於裝置之框架， 與_ - 、 稽由此等 光子元件而形成之聚光點之位置及聚光點的掃描執跡， 於成為一定之位置及軌跡，因此可預先藉由幾何計算由 實測）求出表示聚光點之座標（F〇, F1 F2 3以 的函數。 之座‘)或軌跡(弧 二因此，在固定玻璃基板G之後，藉由進行滑動平台2 台座7、及升降平台U之χγζ方向的位置調整，使聚3 、W makes the sliding platform? , gossip. , 丄 W Ten mouths 2/° guides 3, 4 move back and forth in the Y direction. On the sliding platform 2, the horizontal back moves to the left and right of the figure i... The pole is set along the guide 8 to 7 ίο, Λ· is referred to as the X direction). The pedestal 7 is fixed on the pedestal. The screw 10 is rotated by the motor 10 and the pedestal 7g is mounted on the pedestal 7. The pedestal 8 is moved back and forth in the X direction. The adjustment of the lift level is the height of the u-row line (hereinafter referred to as the Z direction) j邛 drop ten sets u, and the mounting base plate G is horizontally able to and can be lost to the adsorption platform 12, when it is glass, want to carry out i & 4 is above the adsorption platform 12. This person is suitable for the edge of the cornering process. The Thunder φ 〃 ELv system is oriented upwards, and the support beam can be tilted by 45 degrees. And the fork is made in addition, the glass substrate is good. The camera 20 and the pair formed on the substrate 12 201002460 are positioned (not shown) so that the edge line EL faces the γ direction. In the case where the substrate G is constant, the positioning guide may be provided on the surface of the suction platform 12 in advance, and one of the substrates may be positioned to abut against the guide. Above the glass substrate G, a laser light source 13, a current mirror 14 (beam deflecting portion), and a lens unit 15 (concentrating member) are mounted. The current mirror 14 and the lens unit 7G 15 constitute a scanning optical system i6. The laser source 13 uses Nd ~ YAG laser #, shield ^, ACJ flute source. The laser light source 13 has an emission direction in the xz plane which is 45 degrees obliquely downward toward the left. The current mirror 14 is arranged on the optical path of the laser beam emitted from the laser light source 13 to emit the laser beam obliquely downward to the right, and by the oscillating motion of the mirror, the beam is shot 'h more The direction in which the beam is emitted is deflected in the face. At this time, the range of the oscillating motion of the mirror 14 is adjusted in accordance with the angular range of the chamfering process to be performed by the object to be conditioned. = Element 15 is a collection of laser beams emitted from the current mirror 14 to... Moreover, the direction of the emission is deflected by the current mirror 14, and it is known that the laser beam is directed toward the lens + + u (the result of the incident position of 15 'the spotlight edge line EL of the laser beam emitted from the lens unit 15 In-plane) In-plane (that is, 'orthogonal to concave') is concave when viewed from the lens unit side (convex toward the outside of the substrate). The point is, for example, as shown in FIG. 2, by the current mirror 14 The selected trajectory of the oscillating motion point becomes ^Fuu2ur(). The kinetic aggregation first describes a specific example of the lens unit 15. The lens unit & is a non-telecentric lens and a flat-border, and The scanning of the concentrating point can be performed by the early smear of the smear of the smear. The shape of the F0, F1, F2 is as follows: the shape of the squash R0 is convex (toward the outer side of the substrate). The lens unit is fixed to the frame of the device, and the position of the condensed spot formed by the _-, the photon element, and the scanning trace of the condensed spot are at a certain position and trajectory, so that it can be used in advance The geometric calculation is obtained by the actual measurement). The coordinates indicating the convergence point (F〇, F1 F2 3) are obtained. Therefore, the seat ‘ or the trajectory (the arc 2), after fixing the glass substrate G, by adjusting the position of the sliding platform 2 pedestal 7 and the lifting platform U in the χγ direction, the poly 3,
抑對準於設定在邊緣線EL上或邊緣線EL 面的位置。 77工預疋 〃接者’針對去角加卫裝置LM之控制系統作說明 係控制系統的方塊圖。去角加工裝置L M具備 種β制眘^ #各· 控制：枓、§又疋參數、及程式(軟體)之記憶體，以 執仃運算處理之CPU構成的控制部5〇。 >二控制部50係控制以下各驅動系統，亦即駆動用以進 平纟2、台座7、升降平台11之定位或移動之馬達(馬 達9等）的平台驅動部51;驅動吸附平台12之吸引夹頭的 及附…2;驅動電流鏡14之射束偏向部驅動部 連接射照射的雷射驅動部…又，控制部5。係 =由鍵盤、滑氣等構成之輸入部56、及在顯示書面上 仃各種顯不之顯示部57，並形成為可在晝面顯示必要資 Λ，且輸入必要之指令或設定。 、 板對去角加去㈣作作說明。將基 附平台12，並使用攝影機20進行位置調整。 14 201002460 接著，使邊緣線EL朝向v + ^ 朝向Y方向並藉由滑動平台 及升降平台11進行位晋锏斂 卞^ 2 口厓7 ,Α ώ 置調整，以使聚光點F0之座桿到達 邊緣線EL·上或其附近 H知到運 町近之加工預定面的深度。 此時，只要使A庙，& , 、升降平台Η連動移動，即能使 基板移動於傾斜方向，㈤ H h沾 口此此使用作為聚光點F0於基板之 冰度方向的位置調整機構。 攸l 接著，驅動電流鏡14 ^ 久由射无源1 3，使雷射走a彳嘉络 口 在4光點藉由剝離溶融除去美妬妊 料而形成去角加工面。 仏喊除去基板材 在涵蓋邊緣線EL之全 送滑動平么2 ,,之王長進仃去角時，係以—定速度移 動技γ射束之知描面（ΧΖ面）使基板G移 向。此時，亦可間歇移送滑動平台 對相同加工位置進行複數次掃描。 域田射束It is aligned with the position set on the edge line EL or the edge line EL plane. The splicer of the LM is described in the block diagram of the control system of the angling device LM. The chamfering machine L M is provided with a control unit 5 configured by a CPU that performs a calculation process, such as a memory of a β system, a control unit, and a program (software). > The second control unit 50 controls the following drive systems, that is, the platform drive unit 51 for pulsing the motor (motor 9 or the like) for positioning or moving the raft 2, the pedestal 7, and the lifting platform 11; and driving the adsorption platform 12 The suction chuck is attached to the chuck 2; the beam deflecting portion driving portion of the driving current mirror 14 is connected to the laser driving unit that emits radiation, and the control unit 5. The input unit 56 composed of a keyboard, an air blower, and the like, and the display unit 57 that displays various types of display are written, and is formed so that necessary information can be displayed on the side, and necessary instructions or settings are input. The board is added to the corner (4) for explanation. The platform 12 will be attached and positionally adjusted using the camera 20. 14 201002460 Next, the edge line EL is oriented toward the v + ^ direction toward the Y direction and is moved by the sliding platform and the lifting platform 11 to adjust the position of the cliff 7 and the 7 , to adjust the seatpost of the concentrating point F0. When reaching the edge line EL· or in the vicinity thereof, I know the depth of the processing plan surface near the Yunmachi. At this time, as long as the A temple, the &, and the lifting platform are moved in tandem, the substrate can be moved in the oblique direction, and (5) the H h is used as the position adjusting mechanism of the light collecting point F0 in the ice direction of the substrate. .攸l Next, drive the current mirror 14 ^ for a long time to shoot passive 1 3, so that the laser strikes a 彳 络 口 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 。 。 。 。 。 。 。 。 。 。 。 。 Screaming to remove the base plate in the cover edge line EL, the full slide is 2, and when the king grows into the corner, the substrate G is moved to the surface of the gamma beam by the fixed speed gamma beam . At this time, the sliding platform can also be intermittently transferred to perform multiple scans on the same processing position. Field beam
又’在欲形成勤；、'这 I 行去角加工介 工面時’係分成複數次進 订去角加工。亦即，如圖 退 聚光點設定於接近邊_人之去角加工係將 、逻緣踝EL·之較淺位置，一邊往 動一邊進行加工，第方向移 ,A , 第一-人移動則使聚光點之位置逐漸偏蒋 至基板内部側，以只费/ 心研褐移 1以反覆進行同樣之加工。 其次，針對變形實施例作說明。 ® 5係使聚光構件 由Θ透鏡15a來取代透鏡單 =光學系統的放大圖。此時，由於聚光點5 跡在XZ面内孫3古& 斯1 内係呈直線狀，因此可進行c面之去角加工。 又，由於若將透鏡單元15之曲面形狀、 折射率等弁7 千千4、及 予參數予以適當設計，則可製作能描緣所欲之 15 201002460 掃描軌跡的自由& &m ,, ,面透鏡，因此即可使用此自由曲面透鏡 、。工面形成為拋物面、橢圓面、或任意之自由曲面。 二，亦可使用反射鏡以取代透鏡，來描繪與透鏡之掃描 軌跡相同的轨跡。 又使射束偏向部由電流鏡取代為容而於 同樣之去角加卫。 #代為夕面鏡時亦能進行 、圖6係掃描光學系統之變形例。對與圖2相同之 賦予相同符號，省略其說明。圖2之 係以電流鏡14掃广隹勒夕你¥ / 田先予糸統中’雖 於、…… 田…點之位置，但此處係代替電流鏡14， #動：=15之平面平行板安裝擺動機構(未圖示)，藉由 機構，而實質地構成與圖2相同之掃描軌跡。 一二圖7係將聚光構件由非遠心…射鏡與平面平 订«成的單元15b取代時之掃描光學系統之放大圖。 行板:ΓΓΓ與圖2所說明之非遠心之f0透鏡與平面平 丁板之、，、且合b同樣地，能伟命古 F1 m點之掃描軌跡成為連結F0, ，之弧R〇的形狀（朝向基板外側呈凸狀）。 加工使用此等掃描光學系統時亦能進行與_ 2相同之去角 又，藉由使用有限元素法設計具有適當之光 二球面透鏡或非球面反射鏡’而亦能僅以單透鏡或單反射 鏡，形成與非遠心之β透鏡及平面平 — 的光學系統。 d组合透鏡相等 又，在沿邊緣線EL進行去角加工時，圖2之去角加工 中，雖係移動裝载基板G之滑動平台2,不過亦可 16 201002460 移動掃描光學系統（電流鏡14、透鏡單元1 5)側。 以上’雖針對玻璃基板之去角加工作了說明，不過針 對其他脆性材料基板，亦可根據基板材料各自之吸收特性 來選擇可使用之雷射光源，藉此實現相同之去角加工。 【圖式簡單說明】 圖1係表示本發明之一實施形態之脆性材料基板之去 角加工裝置之構成的圖。 圖2係圖1之掃描光學系統的放大圖。 圖3係圖^去角加工裝置之控制系統的方塊圖 圖4係表示形成較深之去角加工面時之步驟的圖 圖5係掃描光學系統之變形例的放大圖。 圖6係掃描光學系統之變形例的放大圖 圖7係掃描光學系統之變形例的放大圖 加熱熔融法進行去 雷射劃線法進行去In addition, when it is desired to form a diligent work, the 'I-line chamfering the working surface' is divided into a plurality of custom-made chamfering processes. That is to say, as shown in the figure, the defocused spot is set to be close to the edge _ person's detour processing system, the shallow edge of the edge 踝 EL ·, while moving forward, the first direction, A, first-person movement Then, the position of the light-converging point is gradually biased to the inner side of the substrate, and the same processing is repeated in order to carry out the brown shift only 1 . Next, a description will be given of a modified embodiment. ® 5 is a magnified view of the optical system in which the concentrating member is replaced by a Θ lens 15a. At this time, since the spot 5 is traced in the XZ plane, the Sun 3 & 1 is linear, so the c-plane chamfering can be performed. Further, if the curved surface shape, the refractive index, and the like of the lens unit 15 are appropriately designed, and the parameters can be appropriately designed, the free && m of the scanning track of the 2010 201060 can be created. , a face lens, so you can use this free-form lens. The work surface is formed as a paraboloid, an elliptical face, or an arbitrary freeform surface. Second, a mirror can be used instead of the lens to depict the same trajectory as the scanning trajectory of the lens. In addition, the beam deflecting portion is replaced by a current mirror and is added to the same corner. #代以夕镜镜 can also be performed, Figure 6 is a modification of the scanning optical system. The same reference numerals are given to the same as in Fig. 2, and the description thereof will be omitted. Figure 2 is the current mirror 14 sweeping the wide 隹 夕 ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ A swinging mechanism (not shown) is attached, and the scanning trajectory similar to that of FIG. 2 is substantially constituted by the mechanism. Fig. 7 is an enlarged view of the scanning optical system in which the concentrating member is replaced by a unit 15b which is not a telecentric lens and a plane. The row board: ΓΓΓ is the same as the non-telecentric f0 lens illustrated in Fig. 2, and the same as the b-plane of the plane flat plate, the scanning trajectory of the F1 m point of the weimugu can be connected to F0, and the arc R〇 Shape (convex to the outside of the substrate). When using these scanning optical systems, the same chamfering angle as _ 2 can be performed. By using a finite element method to design a suitable optical double-spherical lens or aspherical mirror, it is also possible to use only a single lens or a single mirror. An optical system that forms a non-telecentric beta lens and a flat plane. d. The combined lenses are equal. When the chamfering is performed along the edge line EL, in the chamfering process of FIG. 2, although the sliding platform 2 of the loading substrate G is moved, it is also possible to move the scanning optical system (current mirror 14). , lens unit 1 5) side. The above has been described for the chamfering of the glass substrate. However, for other brittle material substrates, the laser light source that can be used can be selected according to the absorption characteristics of the substrate material, thereby achieving the same chamfering process. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the configuration of a chamfering apparatus for a brittle material substrate according to an embodiment of the present invention. 2 is an enlarged view of the scanning optical system of FIG. 1. Fig. 3 is a block diagram showing a control system of the deangulation processing apparatus. Fig. 4 is a view showing a step of forming a deeper chamfered processing surface. Fig. 5 is an enlarged view showing a modification of the scanning optical system. Fig. 6 is an enlarged view showing a modification of the scanning optical system. Fig. 7 is an enlarged view of a modification of the scanning optical system. The heating and melting method is performed by the de-lasing method.
圖8係表示使用C〇2雷射光源藉由 角加工時之雷射照射狀態的截面圖。 圖9係表示使用C〇2雷射光源藉由 角加工時之雷射照射狀態的圖。 線法進行去角加工時 圖1 〇係使用c 〇2雷射藉由雷射則 之加工戴面的放大圖。 【主要元件符號說明】 2 滑動平台 7 台座 17 201002460 11 升降平台 12 吸附平台 13 雷射光源 14 電流鏡（射束偏向部） 14a 多面鏡 15 透鏡單元（聚光構件） 1 5 a f 0透鏡 15b 單元 16 掃描光學系統 18Fig. 8 is a cross-sectional view showing a state of laser irradiation by angular processing using a C 〇 2 laser light source. Fig. 9 is a view showing a state of laser irradiation by angular processing using a C 〇 2 laser light source. When the line method is used for the chamfering process, Fig. 1 is an enlarged view of the processed surface of the laser using the c 〇2 laser by laser. [Main component symbol description] 2 Slide platform 7 pedestal 17 201002460 11 Lifting platform 12 Adsorption platform 13 Laser light source 14 Current mirror (beam deflecting portion) 14a Polygon mirror 15 Lens unit (concentrating member) 1 5 af 0 lens 15b unit 16 scanning optical system 18