201000393 九、發明說明： •【發明所屬之技術領域】 • 本發明涉及一種奈米碳管薄膜的製備方法。 【先前技術】 奈米碳管係九十年代初才發現的一種新型一維奈米材 料（5月參見 Helical microtubules of graphitic carbon, Nature，201000393 IX. Description of the invention: • [Technical field to which the invention pertains] • The present invention relates to a method for preparing a carbon nanotube film. [Prior Art] A new type of nano-dimensional material discovered in the early 1990s (see Helical microtubules of graphitic carbon, Nature, May).
Sumio Iijima，v〇l 354, p56(1991))。奈米碳管的特殊結構决 定了其具有特殊的性質，如高抗張强度和高熱穩定性；隨 著奈米碳管螺旋方式的變化，奈米碳管可呈現出金屬性或 半導體性等。由於奈米碳管具有理想的一維結構及在力 學、電學、熱學等領域優良的性質，其在材料科學、化學、 物理學等交又學科領域已展現出廣闊的應用前景，在科學 研究及產業應用上也受到越來越多的關注。 雖然奈米碳管性能優異，具有廣泛的應用，然一般情 况下製備得到的奈米碳管爲顆粒狀或粉末狀，這對人們的 應用造成了报多不便。 爲了製成薄臈狀的奈米碳管結構，先前的方法主要包 括：直接生長法；噴塗法或朗繆爾.佈洛節塔 Blodgett’ LB)法。其中，直接生長法一般通過控制反應條 ^，如以硫續作爲添加劑或設置多層催化劑等，通過化學 氣相沈積法直接生長得到奈米碳管薄臈結構。噴塗法一般 通過將奈米碳管粉末形成水性溶液並塗覆於-基材表面’ 經，燥後形成奈米碳管薄膜結構。LB法-般通過將一奈米 碳管溶液混入另—具有不同密度之溶液（如有機溶劑）卜 7 201000393 利用分子自組裝運動，奈来π * 一 ‘管薄膜結構。 ’、出溶液表面形成奈米碳 - ⑽，上述通過直接生長法、噴塗㈣LB靜得的 奈米碳管薄臈結構均需形^ 法獲付的 撑結構。另外，上述底上’無法實現自支 米碳管爲無序排列，無㈣结構中的奈 雷枓、隹一丰认 刀利用不米碳官良好的徑向導 ，較二:差備管—^ .爲—黑色薄膜，無法取代先前 的銦錫氧化物（IT0)材料，用於製備透明導電薄獏。 用^提供—種奈米碳管薄膜的製備方法，使採 備方法㈣的奈米碳^物具有 的導電性及較大的透明度實為必要。 1 乂好 【發明内容】 一種奈米碳管薄膜的製備 碳管陣列，形成於-基底;採::=:夺： 丄=:二具從電漿處理後的奈_陣 *4=!技：’本技術方案奈米破管薄膜的製備方 /、 優.』.，、一，採用電漿處理所述奈米碳管 可以對該以碳管陣關高度進行控制 處奈Π薄臈的透明度。其二，通過對奈米碳：::： $ ’可以去除排列不規則的奈米碳管，從而提 π “車列的順排度，使奈米碳管薄膜更易拉取。其：：：反 從奈米碳管陣列拉取得到的奈米碳管薄膜中奈；：管通: 201000393 凡德瓦爾力首尾相連，從而使奈米碳管薄膜具有自支撑結 構。其四，上述方法得到的奈米碳管薄膜中奈米碳管沿同 -方向定向排列，在該方向上奈米碳管薄膜具有優異的導 電性。 【實施方式】 以下將結合附圖詳細說明本技術方案實施例奈米碳管 薄膜的製備方法。 請參閱圖1，本技術方案實施例中奈米碳管薄膜的製 備方法主要包括以下步驟： 步驟.製備一奈米碳管陣列，優選地，該陣列爲趙 順排奈米碳管陣列。 Λ 本實施例中’ S順排奈米碳管陣列的製備方法採用化 學氣相沈積法’其具體步驟包括：（a)提供—平整基底， 該基底可選用P型或㈣梦基底，或選用形成有氧化層的 矽基底，本實施例優選爲採用4英寸的矽基底；（b)在基 底表面均勻形成一催化劑層，該催化劑層材料可選用鐵 (以）、鈷（Co)、鎳（Ni)或其任意組合的合金之一；（c) 將上述形成有催化劑層的基底在700〜900。(：的空氣中退火 約30刀釦〜9〇分鐘；⑷將處理過的基底置於反應爐中， 在保護氣體環境下加熱到·〜·。c，然後通人碳源氣體 應約5 30为知，生長得到超順排奈米碳管陣列，其高 度爲200〜400微米。該超順排奈米碳管陣列爲多個彼此平 行且垂直於基底生長的奈米碳管形成的純奈米碳管陣列。 通過上述控制生長條件，該超賴奈米碳管卩車列巾基本不 201000393 含質，如無定型碳或殘留的催化劑金屬顆粒等。該奈 米碳管陣财的奈米碳管彼此通過凡德瓦爾力緊密接觸形 成陣列。 本實施例中碳源氣可選用乙炔、乙婦、甲烧等碳氮化 合物，本實施例優選的碳源氣爲乙炔；保護氣體爲氮氣或 惰性氣體，本實施例優選的保護氣體爲氬氣。 步驟二：採用電漿處理該奈米碳管陣列。採用電衆處 理該奈米碳管陣列的方法具體包括以下㈣：首先，將太 米碳管陣列連同基底放入一真空腔體；其次，在真空腔^ 中通入反應氣冑，形成該反應氣體的電冑，使豸電聚與奈 米碳管陣列反應。 ~ μ 具體地，上述步驟二可以在一反應離子蝕刻機中進 行。首先，將奈米碳管陣列連同基底放入反應離子蝕刻機 的真空腔體中，並將該真空腔體中抽成真空。其次，在反 應離子㈣機的真^㈣巾通人反應氣體，該反應氣體可 選擇爲氧氣、氫氣或四氟化碳等。最後，在上述真空腔體 中通過輝光放電反應産生反應氣體的電漿，並與奈米碳管 陣列進行反應。具體地，上述反應氣體通過輝光放電形成 電漿，該電漿包括帶電荷的離子及電子。上述帶電荷的離 子通過撞擊奈米碳管表面對奈米碳管進行物理蝕刻，或者 通過與奈米石反官中的碳原子反應生成二氧化碳等易揮發的 反應産物對奈米碳管進行化學蝕刻。依據反應氣體的不 同，该電漿包括氧電漿、氫電漿或四氟化碳電漿等常用的 電漿。優選地，該反應氣體爲氧氣，該電漿爲氧電漿。上 201000393 述輝光放電反應的功率可以爲2〇〜3〇〇瓦，優選爲瓦。 ，反應氣體流量爲10〜1〇M票準狀態毫升/分鐘（⑽），優選 爲5〇SCCm。真空腔體内氣體壓强爲⑻帕 帕。電漿與奈米碳管陣列反應時間爲1〇秒〜丄小時^憂選 爲15秒〜8分鐘。 由於奈米碳管陣列爲一緊密排列結構，通過適當控制 腔内氣體堡强和反應時間，電聚只與奈米碳管陣列表面反 應，很難滲透到陣列内部，從而不會影響内部奈米碳管的 碳Γ車列的厚度减薄，奈米礙管陣列 不“官的面度變短。上述反應時間不能太長或 二。:上述反應時間太長時，奈米碳管陣列與電聚反應 f度，從而使奈米碳管陣列的厚度過薄，不利於奈米碳管 2膜的拉取。當上述反應時間太短時，奈米碳管陣列盥電 碳管陣列厚度仍然較厚，無法達到提高 ^卡反e薄膜透明度的目的。優選的’所述採用電漿處理 後的奈米碳管陣列的厚度爲20〜200微米。 在步驟二中，氧電漿與奈米碳管陣列表面進行反應， =而使奈米碳管陣列减薄。故，通過控制氧電浆處理料 二’可以控制奈米碳管陣列的高度。進一步地，在步驟一 不米碳管陣列的生長初期’由於初始生長條件的影響，所 2的奈未碳管陣職不穩定，奈米碳管排列相對雜敗。 1種生長條件敎並生長—段時間後，奈米碳管陣 管Γ垂直基底的方向生長，形成-超順排奈米 厌* ，通過㈣二t採用《處理該奈未破管陣 11 201000393 =，可以去除上述奈米碳管陣列頂端排列較爲㈣的奈米 -碳管’得到-整齊的超順排奈米碳管陣列，從*更有= .步驟三中奈米碳管薄膜的拉取。 、 步驟三··採用一拉伸工具從奈米碳管陣列令拉取獲尸 -奈米碳管薄臈。其具體包括以下步驟：（a)從上述：： 石反官陣列中選定一定寬度的多個奈米碳管片斷，本實施例 優選爲採用具有-定寬度的膠帶接觸奈米碳管陣列以選定 -定寬度的多個奈米碳管片斷；⑴以一定速度沿基本垂 直於奈米碳管陣列生長方向拉伸該多個奈米碳管片斷，以 形成一連續的奈米碳管薄膜。 在上述拉伸過程中，該多個奈米碳管片斷在拉力作用 下沿拉伸方向逐漸脫離基底的同時，由於凡德瓦爾力作 用，該選定的多個奈米碳管片斷分別與其他奈米碳管片斷 首尾相連地連續地被拉出，從而形成一奈米碳管薄膜。該 奈米碳管薄臈爲定向排列的多個奈米碳管束首尾相連形： 的具有-定寬度的奈米碳管薄膜。該奈米碳管薄膜中夺 碳管的排列方向基本平行於奈米碳管薄膜的拉伸方向。'該 奈米碳管薄膜的微觀結構請參閱圖2。 該直接拉伸獲得的擇優取向排列的奈米碳管薄膜比益 序的奈米碳管薄膜具有更好的均句性及透明度，該奈米碳 官薄膜的光透射率可以達到9〇%。同時該直接拉伸獲得夺 米碳管薄膜的方法簡單快速，適宜進行工業化應用。 本實施例中，該奈米碳管薄膜的寬度與奈来碳管陣列 所生長的基底的尺寸有關，該奈米碳管薄膜的長度不限， 12 201000393 可根據實際需求制得。本實施例中採用4英寸的基底 二㈣f〇米碳管陣列’該奈米碳管薄膜的寬度可爲 〇::—，該奈米碳管薄膜的厚度爲。·5奈—】 請參閱圖3,奈米碳管薄膜爲從生長時間爲15分鐘的 奈米碳管陣列拉取的奈米碳管薄膜。在 Η … 10帕，氧氣流量50sccm的條件下,,、 ，氣壓 時間爲15分鐘的奈米碳管陣列。從圖3可以發現，在 380〜72G·米的可見光波長範_，奈米碳管薄 了上的光透射率。並且，隨著處理時間的變化，從上 陣列拉取得到的奈米碳管薄膜的光透 =率逐漸增大，透明度逐漸增大。其I將奈米碳”列 ==鐘後’由該陣列得到的奈米碳管薄膜的光透射率 =㈣:奈米波長的光照射下，奈米碳管薄膜最大光 透射率可以達到90%。 請參閱表1，可以發現，隨著處理時間的變長，夺米 ，管陣列高度逐漸减小’所得到的奈米碳管薄膜的光透射 率逐漸增大。具體的’在波長爲55G奈米的光的照射下， 經過乳電漿處理8分鐘後，得到的奈米碳管薄膜且有約 85%的光透射率。 樣品 編號 時間 電漿處理米碳管薄膜產沾閉在 生長 ·一 '-- 氧電漿 陣列 所得薄膜550nm 處理時間 高度 光透射率 (min) _(β m) (%) 13 201000393 1 2 3 15 15 15 1 2 4 183 168 127 78.5 79.3 80.5 84.8 -------84.8_ 可以理解，由於本實施例超順排奈米碳管陣列中的奈 米碳管非常純淨，且由於奈米碳管本身的比表面積非常 大：故該奈米碳管薄膜本身具有較强的粘性。&，該奈米 碳管薄膜可根據需要直接粘附在各種基體上。 :夕卜，可使用有機溶劑處理上述枯附在基 管薄膜表面浸潤整個夺有=劑滴落在奈米碳 右H ，機溶劑爲揮發性 有機洛劑，如乙醇、？醇、丙酮、二氯 Π:=該奈米碳管薄膜經有機溶劑浸潤2 後，在揮土性有機溶劑的表面張力的作用下 薄膜可牢固地貼附在基體表面，且表面體積比减 降低，具有良好的機械强度及韌性。 ， 本技術領域技術人員應明白，本實 方法製備多個奈米蝴膜，並將該多個奈 相同或不同的方向重叠，從而得到包含多居：二： 的薄膜結構。該奈米碳管薄膜及奈米碳管薄； 好的導電性及較大的透明度，可以作爲透明導電。 於如=屏、液晶顯示器、發光二極體等各種領域。…用 本技術方案奈米碳管薄膜的製備方法τ 其一，採用電裝處理所述奈米碳管陣列^以對該=碟 14 201000393 從而控制得到的奈米碳管薄膜的Sumio Iijima, v〇l 354, p56 (1991)). The special structure of the carbon nanotubes determines its special properties, such as high tensile strength and high thermal stability. The carbon nanotubes can exhibit metallic or semiconducting properties as the carbon nanotubes spiral. Because the carbon nanotubes have an ideal one-dimensional structure and excellent properties in the fields of mechanics, electricity, heat, etc., they have shown broad application prospects in the fields of materials science, chemistry, physics, etc., in scientific research and Industrial applications are also receiving more and more attention. Although the performance of the carbon nanotubes is excellent and has a wide range of applications, in general, the prepared carbon nanotubes are in the form of granules or powders, which has caused inconvenience to people's applications. In order to form a thin braided carbon nanotube structure, the prior methods mainly include: direct growth method; spray method or Langmuir Buloh Tower Blodgett' LB) method. Among them, the direct growth method generally obtains a carbon nanotube thin crucible structure by controlling the reaction strip, for example, by using sulfur as an additive or a multilayer catalyst, and directly growing by chemical vapor deposition. The spraying method generally forms a carbon nanotube film structure by drying the carbon nanotube powder into an aqueous solution and coating it on the surface of the substrate. The LB method is generally carried out by mixing a carbon nanotube solution into another solution having a different density (such as an organic solvent). 7 201000393 Using molecular self-assembly motion, Nai π * a 'tube thin film structure. ', the surface of the solution is formed into nanocarbon - (10), and the above-mentioned structure of the carbon nanotubes which are obtained by the direct growth method and the sprayed (4) LB are required to be obtained by the method. In addition, on the above bottom, it is impossible to realize the disordered arrangement of the self-supporting carbon tubes, and there is no (four) structure in which the Nai Lei, Yu Yifeng recognizes the knife to use the good radial guidance of the non-carbon officer, and the second: the differential preparation tube -^ It is a black film that cannot replace the previous indium tin oxide (IT0) material and is used to prepare a transparent conductive thin crucible. It is necessary to use the method of preparing a carbon nanotube film to make the conductivity and large transparency of the nanocarbon of the method (4). 1 乂好 [Summary of the invention] A carbon nanotube array for the preparation of a carbon nanotube film, formed on the substrate; mining::=::: 丄 =: two from the plasma treatment of the nano-array * 4 =! : 'The technical solution of the nano tube breaking film preparation /, excellent.", First, the use of plasma treatment of the carbon nanotubes can be controlled by the carbon tube array height transparency. Secondly, by disposing the irregular carbon nanotubes on the carbon:::: $ ', the π" alignment of the trains can be improved, and the carbon nanotube film can be pulled more easily. Its::: In the nano carbon tube film obtained from the nano carbon tube array, the tube is passed through: 201000393 Van der Waals force is connected end to end, so that the carbon nanotube film has a self-supporting structure. Fourth, the above method is obtained. The carbon nanotubes in the carbon nanotube film are aligned in the same direction, and the carbon nanotube film has excellent conductivity in this direction. [Embodiment] Hereinafter, a nano embodiment of the present technical solution will be described in detail with reference to the accompanying drawings. Referring to FIG. 1 , a method for preparing a carbon nanotube film in the embodiment of the present technical solution mainly includes the following steps: Step: preparing a carbon nanotube array, preferably, the array is Zhao Shun Pai Nano carbon tube array. Λ The method for preparing the 'S-aligned carbon nanotube array in this embodiment adopts chemical vapor deposition method'. The specific steps include: (a) providing a flat substrate, the substrate may be P type or (4) Dream base, or choose The crucible substrate formed with the oxide layer is preferably a 4-inch germanium substrate; (b) a catalyst layer is uniformly formed on the surface of the substrate, and the catalyst layer material may be iron, cobalt or cobalt. (Ni) or one of the alloys of any combination thereof; (c) the substrate on which the catalyst layer is formed is aged at 700 to 900. (: air is annealed for about 30 knives for 9 minutes; (4) the treated substrate is placed In the reaction furnace, heated to a protective gas atmosphere to ~ ~ · c, and then the human carbon source gas should be about 5 30, the growth of a super-sequential carbon nanotube array, the height of 200 ~ 400 microns. The super-sequential carbon nanotube array is a plurality of pure carbon nanotube arrays formed by a plurality of carbon nanotubes that are parallel to each other and perpendicular to the substrate. The super-resolved carbon nanotubes are arranged by the above controlled growth conditions. Basically, it does not contain 201000393, such as amorphous carbon or residual catalyst metal particles, etc. The carbon nanotubes of the carbon nanotubes are in close contact with each other to form an array by van der Waals force. In this embodiment, carbon source gas can be used. Carbonitrides such as acetylene, women, and Preferably, the carbon source gas of the embodiment is acetylene; the shielding gas is nitrogen or an inert gas, and the preferred shielding gas of the embodiment is argon. Step 2: treating the carbon nanotube array with a plasma. The method for the carbon nanotube array specifically includes the following (4): first, placing the array of carbon nanotubes together with the substrate into a vacuum chamber; secondly, introducing a reaction gas in the vacuum chamber to form an electric enthalpy of the reaction gas, The ruthenium electropolymer is reacted with the carbon nanotube array. ~ μ Specifically, the above step 2 can be performed in a reactive ion etching machine. First, the carbon nanotube array and the substrate are placed in a vacuum chamber of the reactive ion etching machine. And vacuuming the vacuum chamber. Secondly, in the reaction ion (4) machine, the reaction gas is selected from oxygen, hydrogen or carbon tetrafluoride. Finally, a plasma of the reaction gas is generated by a glow discharge reaction in the above vacuum chamber, and reacted with the carbon nanotube array. Specifically, the above reaction gas forms a plasma by glow discharge, and the plasma includes charged ions and electrons. The charged ions physically etch the carbon nanotubes by striking the surface of the carbon nanotubes, or chemically etch the carbon nanotubes by reacting with the carbon atoms in the nanostrip reaction to form a volatile reaction product such as carbon dioxide. . Depending on the reaction gas, the plasma includes conventional plasmas such as oxygen plasma, hydrogen plasma or carbon tetrafluoride plasma. Preferably, the reaction gas is oxygen, and the plasma is an oxygen plasma. The power of the glow discharge reaction described above may be 2 〇 3 〇〇 watts, preferably watts. The flow rate of the reaction gas is 10 to 1 〇M in a quasi-state of ML/min ((10)), preferably 5 〇 SCCm. The gas pressure in the vacuum chamber is (8) Papa. The reaction time of the plasma and the carbon nanotube array is 1 丄 丄 丄 ^ ^ ^ 忧 忧 忧 忧 为 为 为 为 为 为 为 为 为 为Since the carbon nanotube array is a tightly arranged structure, by appropriately controlling the gas barrier strength and reaction time in the chamber, the electropolymer only reacts with the surface of the carbon nanotube array, and it is difficult to penetrate into the interior of the array, thereby not affecting the internal nanometer. The thickness of the carbon nanotubes of the carbon tube is thinned, and the nanometer obstructs the array without the official surface being shortened. The above reaction time cannot be too long or two.: When the reaction time is too long, the carbon nanotube array and the electricity are The polymerization reaction f degree, so that the thickness of the carbon nanotube array is too thin, which is not conducive to the pulling of the carbon nanotube 2 film. When the above reaction time is too short, the thickness of the carbon nanotube array of the carbon nanotube array is still relatively thin. Thick, can not achieve the purpose of improving the transparency of the anti-e film. The preferred 'the plasma treated carbon nanotube array has a thickness of 20 to 200 microns. In step two, oxygen plasma and nano carbon The surface of the tube array is reacted, and the carbon nanotube array is thinned. Therefore, the height of the carbon nanotube array can be controlled by controlling the oxygen plasma treatment material 2'. Further, in step 1 of the carbon nanotube array Early growth' due to initial growth The influence of the pieces is not stable, and the carbon nanotubes are unstable. The growth conditions of the carbon nanotubes are relatively poor. One growth condition is 敎 and grows. After a period of time, the carbon nanotubes grow in the direction of the vertical base and form. - Super-shunning nano-disgusting *, through (four) two t using "treatment of the Neflon array 11 201000393 =, can remove the above-mentioned carbon nanotube array top arrangement (four) of the nano-carbon tube 'get - neat super Aligning the array of carbon nanotubes, from * more =. In step 3, the carbon nanotube film is pulled. Step 3 · Using a stretching tool to pull the corpse from the carbon nanotube array The carbon tube is thinner, which comprises the following steps: (a) selecting a plurality of carbon nanotube segments of a certain width from the above:: stone reverse array, in this embodiment, preferably contacting the nanometer with a tape having a constant width The carbon tube array is selected from a plurality of carbon nanotube segments of a predetermined width; (1) stretching the plurality of carbon nanotube segments at a rate substantially perpendicular to the growth direction of the carbon nanotube array to form a continuous nanometer Carbon tube film. The plurality of carbon nanotube sheets during the above stretching process While gradually pulling off the substrate in the stretching direction under the action of the tensile force, the selected plurality of carbon nanotube segments are continuously pulled out from the other end of the carbon nanotube segments, respectively, due to the van der Waals force, thereby forming a carbon nanotube film which is an end-to-end connection of a plurality of aligned carbon nanotube bundles: a carbon nanotube film having a constant width. The carbon nanotube tube in the carbon nanotube film The alignment direction is substantially parallel to the stretching direction of the carbon nanotube film. 'The microstructure of the carbon nanotube film is shown in Figure 2. The preferred orientation of the aligned carbon nanotube film obtained by direct stretching is better than that of the order. The carbon nanotube film has better uniformity and transparency, and the light transmittance of the nano carbon film can reach 9〇%. At the same time, the direct stretching method for obtaining the carbon nanotube film is simple and rapid, and is suitable for industrialization. In this embodiment, the width of the carbon nanotube film is related to the size of the substrate on which the carbon nanotube array is grown, and the length of the carbon nanotube film is not limited, and 12 201000393 can be prepared according to actual needs. In the present embodiment, a 4-inch substrate is used. The width of the carbon nanotube film can be 〇::-, and the thickness of the carbon nanotube film is . · 5奈—] Referring to Figure 3, the carbon nanotube film is a carbon nanotube film drawn from a carbon nanotube array with a growth time of 15 minutes. Under the condition of Η10 Pa, oxygen flow rate of 50 sccm, and, the carbon nanotube array with a pressure time of 15 minutes. It can be seen from Fig. 3 that at a wavelength of visible light of 380 to 72 G·m, the carbon nanotubes are thinner on the light transmittance. Moreover, as the processing time changes, the light transmittance rate of the carbon nanotube film obtained from the upper array is gradually increased, and the transparency is gradually increased. The light transmittance of the carbon nanotube film obtained from the array is (I): the maximum light transmittance of the carbon nanotube film can reach 90. %. Please refer to Table 1. It can be found that as the processing time becomes longer, the rice is tapped and the height of the tube array is gradually reduced. The light transmittance of the obtained carbon nanotube film gradually increases. The specific wavelength is Under the irradiation of 55G nanometer light, after 8 minutes of treatment with the milk plasma, the obtained carbon nanotube film has a light transmittance of about 85%. Sample No. Time plasma treatment of the carbon nanotube film is produced in the growth · a '-- oxygen plasma array film 550nm processing time high light transmittance (min) _ (β m) (%) 13 201000393 1 2 3 15 15 15 1 2 4 183 168 127 78.5 79.3 80.5 84.8 --- ----84.8_ It can be understood that the carbon nanotubes in the ultra-sequential carbon nanotube array of the present embodiment are very pure, and since the specific surface area of the carbon nanotube itself is very large: the carbon nanotube film It has a strong viscosity. &, the carbon nanotube film can be directly adhered to as needed On various substrates: Xi Bu, can be treated with an organic solvent to adhere to the surface of the base tube film soaked in the entire body. The agent is dripped on the nano carbon right H, the solvent is a volatile organic agent, such as ethanol, alcohol , acetone, dichloropurine: = the carbon nanotube film is infiltrated with an organic solvent 2, the film can be firmly attached to the surface of the substrate under the surface tension of the volatile organic solvent, and the surface volume ratio is reduced, It has a good mechanical strength and toughness. It should be understood by those skilled in the art that the present method can prepare a plurality of nano-films, and overlap the same or different directions of the plurality of naphthalenes to obtain a multi-dwelling: two: Thin film structure. The carbon nanotube film and the carbon nanotube are thin; good conductivity and large transparency can be used as transparent conductive. Such as = screen, liquid crystal display, light-emitting diode and other fields. Technical Solution The preparation method of the carbon nanotube film is as follows. First, the carbon nanotube array is electrically treated to control the obtained carbon nanotube film by the dish 14 201000393.
該方向上奈米碳管薄膜具有優異的導電性。 管陣列的高度進行控制， 透明度。其二，通過對奈 排列不規則的奈米碳管， 度，使奈来破瞢Μ腔承且 β综上所述，本發明確已符合發明專利之要件，遂依法 提出專利申請。惟，以上所述者僅為本發明之較佳實施例， 自不能以此限制本案之申請專利範圍。舉凡習知本案技藝 之人士援依本發明之精神所作之等效修飾或變化，皆應涵 蓋於以下申請專利範圍内。 〜 【圖式簡單說明】 圖1爲本技術方案實施例奈米碳管薄膜的製備方法的 流裎示意圖。 圖2爲本技術方案實施例獲得的的奈米碳管薄膜的掃 描電鏡照片。 圖3爲本技術方案實施例電漿處理後的奈米碳管薄臈 的透射率曲線。 15The carbon nanotube film has excellent electrical conductivity in this direction. The height of the tube array is controlled, transparency. Secondly, by arranging the irregular carbon nanotubes on the Nai, the Nailai breaks through the cavity and the β is comprehensively described. The invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application in this case. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. ~ [Simplified description of the drawings] Fig. 1 is a schematic flow diagram of a method for preparing a carbon nanotube film according to an embodiment of the present invention. Fig. 2 is a scanning electron micrograph of a carbon nanotube film obtained in an embodiment of the present invention. Fig. 3 is a graph showing the transmittance of the carbon nanotubes after the plasma treatment in the embodiment of the present invention. 15