200952047 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種電漿處理裝置及其上電極板，特別是一種電漿增強 化學氣相沈積（PECVD)之電漿處理裝置及其上電極板。 【先前技術】 隨著消費大眾對於面板顯示器技術的接受，用於形成顯示器的基材在 尺寸上已逐漸增加，大型基板的尺寸由約500mm乘以650mm增加至約 2500mm乘以2200mm，因此，電漿增強化學氣相沈積（PECVD)之機台設 計也隨之改變。 如第1圖所示，懸吊在電漿增強化學氣相沈積（PECVD)製程機台上 的氣體擴散系統A1，在經過長期使用的狀況下，會因為地心引力等因素影 響而發生彎曲的問題，此現象後續將造成氣體擴散系統A1之上電極 (diffiiser) All與下電極（SusCeptor) Ai2之間的間距發生變化，因此在成 膜過程中，會造成多層膜（如：SiN/a-Si/N+/PV)之沈積物的均勻度 φ (迎1!01111办）與沈積率（depositionrate)不易控制，因而影響其品質。 為了解決上電極All彎曲日趨嚴重的問題，便於上電極All之部份氣 孔A111鎖入支撐螺絲（supportscrew)，使上電極A11鎖固於托板A2，藉 以支樓上電極All而減緩其受力不均而變曲的機率。然而，當氣體供應單 兀A3所供應的製程氣體在穿過上電極A1 j之氣孔A1 i i後，會回流至鎖固 兀件而使得氟離子累積於支撐螺絲處，因而造成產品在對應處產生色差 (Mum) ’嚴重造成產品不良率上升。 因此’如何避免上電極在長峨用的航下產生-曲的闕，同時防 200952047 止說離子累積於上電極鎖固支撐螺絲處而造成產品產生色差，藉此提升產 品之品質與良率，係為本案之發明人以及從事此相關行業之技術領域者亟 欲改善的課題。 【發明内容】 有鑑於此，本發明提出一種上電極板，安裝於腔體内，腔體設置有托 板，上電極板包含：第一表面；第二表面，對應第一表面；至少一氣體擴 散孔’由第一表面延伸至第二表面，用以導入製程氣體；及至少一定位孔， ❹ 位於第一表面上’用以鎖入鎖固元件而定位於托板。 本發明亦提出一種上電極板，安裝於腔體内，腔體設置有托板，上電 極板包含：第一表面；第二表面，對應第一表面；至少一氣體擴散孔，由 第一表面延伸至第二表面，用以導入製程氣體；至少一定位孔，由第一表 面延伸至第二表面，鎖固元件由第一表面鎖入定位孔而定位於托板；及至 少一封孔塊’位於定位孔内而阻隔製程氣體由第二表面流至鎖固元件。 本發明提出一種電漿處理裝置，包含：托板；下電極板，位於托板之 ® 下方；及上電極板，位於托板與下電極板之間’包含：第一表面，面向托 板；第二表面，對應第一表面，面向下電極板；至少一氣體擴散孔，由第 一表面延伸至第二表面，用以導入製程氣體至上電極板與下電極板之間； 及至少一定位孔’位於第一表面上，用以鎖入鎖固元件而定位於托板。 本發明亦提出一種電漿處理裝置，包含：托板；下電極板，位於托板 之下方；及上電極板’位於托板與下電極板之間，包含：第一表面，面向 托板；第二表面’對應第一表面，面向下電極板；至少一氣體擴散孔，由 第一表面延伸至第二表面，用以導入製程氣體至上電極板與下電極板之 200952047 間；至少一定位孔，由第一表面延伸至第二表面，鎖固元件由第一表面鎖 入定位孔而定位於托板；及至少一封孔塊，位於定位孔内而阻隔製程氣體 由第二表面流至鎖固元件’可有效降低氟離子累積於支撐螺絲處，進而降 低對產品的影響》 有關本發明的較佳實施例及其功效，茲配合圖式說明如後。 【實施方式】 第2圖與第3圖係繪示本發明之第一實施例。電漿處理裝置i包含： φ 腔體10、托板20、下電極板30、上電極板40。 腔體10概呈中空狀，由金屬材質所製成，較佳地可由鋁所製成，但不 限於此，而腔體10之内表面通常以陽極氧化處理（anodeoxidation)，而形 成铭陽極琪（anodized aluminum film)，以对電榮侵钱。 托板20位於腔體1〇内之上方位置處，由金屬材質所製成，較佳地可 由铭所製成’但不限於此’再者，托板20上佈設有複數鎖固元件21。 下電極板30位於腔體1〇内，並設置於托板2〇之下方而與托板2〇約 〇 略平行’下電極板30由金屬材質所製成，較佳地可由銘所製成，且其表面 經陽極氧化處理，但不限於此。 上電極板40位於腔體1〇内，並設置於托板2〇與下電極板30之間， 上電極板40設有相對應之第一表面4〇a與第二表面4〇b。其中，第一表面 40a實質上平行第二表面4〇b，且第一表面4〇a面向托板2〇，第二表面働 則面向下電極板3〇。此外，上電極板4〇設有複數氣體擴散孔41與複數定 位孔42，氣體擴散孔41由第一表面40a延伸至第二表面40b，用以導入製 程氣體至上電極板4〇與下電極板30之間。定位孔42位於第一表面4〇3而 200952047 未延伸至第二表面4〇b，用以鎖入鎖固亓杜 即轉21，而使上電極板40定位於把 板 20。 ' ❹ 前述說明之氣想擴散孔41於第—表面伽處設有第一擴散部如，於 第二表面働設有第二擴散部412。其中，第—擴散部4ιι由第—表面伽 朝向第二表面40b呈漸縮狀，第二擴散部412由第_表面伽朝向第二表 面働呈麵狀。氣體擴散孔41並設有連通部413連接第一擴散部叫與 第二擴散部412 ’使第一擴散部411與第二擴散部412相連通。在此，氣體 擴散孔41之結構、形狀僅是舉例’但本發明不限於此。在其它實施例中， 氣體擴散孔41可為等隨的穿孔或其他結構、形狀，糊技藝人士可依實 際需求來調整其結構。 本實施例之賴_裝置i另包^㈣健單元⑼，位於托板2〇上 方，用以供應製程氣體至腔體，其中，製程氣體可為六氟化硫、三氟 化氮、四氟化複或氣化氳，但本發明不限於此。 當氣體供應單元60供應製程氣體時，製程氣體穿過托板2〇而流入腔 體10内，並由上電極板40之第一表面4〇a流入氣體擴散孔41之第一擴散 部41卜經由連通部413而流出第二擴散部412。藉由氣體擴散孔41將製 程氣體導引至上電極板4〇的第二表面4〇b與下電極板30之間，藉此避免 製程氣體由第二表面40b流至定位孔，並防止製程氣體中的離子7〇堆積於 鎖固元件21處而造成產品在對應處產生色差（Mura)。 第4圖與第5圖係繪示本發明之第二實施例。 在本實施例中，上電極板40之定位孔幻由第一表面40a延伸至第二 200952047 表面40b，使鎖固元件21由第一表面4〇a鎖入定位孔42，藉以使上電極板 40定位於托板20。此外，上電極板4〇於定位孔42内適當位置處設有封孔 塊45，在此，封孔塊45可由金屬材質所製成，較佳地可由鋁所製成但本 發明不限於此。 前述說明之定位孔42於第一表面4〇a處設有第一定位部421，於第二 表面40b設有第二定位部422。其中，第一定位部421自第一表面4加朝向 第二表面4〇b呈漸縮狀，第二定位部422由第一表面4〇a朝向第二表面4(办 ® 呈漸擴狀。定位孔42並設有頸部423連接第-定位部421與第二定位部 422，使第一定位部似與第二定位部似2相連通。在此，定位孔42之結 構、形狀僅是舉例，但本發明不限於此。在其它實施例令，定位孔犯可為 等内控的穿孔或其他結構、形狀，相關技藝人士可依實際需求來調整其結 構。 此外’鎖固元件21鎖固於定位孔42之第一定位部421，封孔塊必則 ❹可設置於第二定位部422或頸部423，在此，封孔塊45之位置僅是舉例， 但本發明不限於此，亦可依實際需求予以改變或調整。 當氣體供應單元6〇供應製程氣體時，製程氣體穿過托板2〇而流入腔 體1〇内，並由上電極板40之第一表面40a流入氣體擴散孔41之第一擴散 部扣’經由連通部413而流出第二擴散部412。藉由氣體擴散孔41將製 程氣體導引至上電極板40的第二表面4〇b與下_板3〇之間而製輕氣 體由第二表面40b流至定位孔，經由封孔塊45阻隔製程氣體流至第一定位 部421而避免製程氣艎中的離子7〇堆積於鎖固元件21。 200952047 本發明以鎖固元件將上電極板定位於托板，防止上電極在長期使用的 情況下產生彎曲的問題，並將上電極板之定位孔以封孔設計（定位孔位於 第一表面上而未延伸至第二表面）或設置封孔塊，藉以避免製程氣體中的 離子累積於上電極之鎖固元件處而造成產品產生色差（Mura)，藉此提升產 品之品質與良率。 雖然本發明的技術内容已經以較佳實施例揭露如上，然其並非用以限 疋本發明，任何具有本領域之通常知識者，在不脫離本發明之精神所作歧 ® 許之更動與潤飾，皆應涵蓋於本發明的範疇内，本發明之保護範圍當視後 附之申請專利範圍所界定者為準。 200952047 【圖式簡單說明】 第1圖為習知電漿增強化學氣相沈積（PECYD)製程機台之示意圖。 第2圖為本發明第一實施例之電漿處理裝置的示意圖。 第3圖為本發明第一實施例之上電極板的示意圖。 第4圖為本發明第二實施例之電漿處理裝置的示意圖。 第5圖為本發明第二實施例之上電極板的示意圖。 【主要元件符號說明】200952047 IX. Description of the Invention: [Technical Field] The present invention relates to a plasma processing apparatus and an upper electrode plate thereof, and more particularly to a plasma enhanced chemical vapor deposition (PECVD) plasma processing apparatus and an upper electrode thereof board. [Prior Art] With the acceptance of the panel display technology by the consumer, the size of the substrate used to form the display has gradually increased, and the size of the large substrate has been increased from about 500 mm by 650 mm to about 2500 mm by 2200 mm, thus, The design of the machine for slurry enhanced chemical vapor deposition (PECVD) has also changed. As shown in Figure 1, the gas diffusion system A1 suspended on a plasma enhanced chemical vapor deposition (PECVD) process machine will bend under the influence of gravity and other factors after long-term use. The problem, this phenomenon will cause the spacing between the upper diffuser and the lower electrode (SusCeptor) Ai2 of the gas diffusion system A1 to change, so that during the film formation process, a multilayer film (such as SiN/a-) is caused. The uniformity φ of the deposits of Si/N+/PV) (willing to 1!01111) and the deposition rate are not easily controlled, thus affecting its quality. In order to solve the problem that the upper electrode All is becoming more and more severe, a part of the air holes A111 of the upper electrode All is locked into the support screw, so that the upper electrode A11 is locked on the support plate A2, thereby relieving the upper electrode A1 to slow down the force. The probability of variation due to unevenness. However, when the process gas supplied from the gas supply unit A3 passes through the air holes A1 ii of the upper electrode A1 j, it will flow back to the locking member to cause the fluorine ions to accumulate at the support screw, thereby causing the product to be generated at the corresponding place. Color difference (Mum) 'severely caused the product defect rate to rise. Therefore, 'how to avoid the upper electrode to produce a curved 阙 under the long raft, while preventing 200952047 from accumulating ions accumulated at the upper electrode locking support screw, resulting in chromatic aberration of the product, thereby improving the quality and yield of the product. It is the subject of the inventor of this case and those who are engaged in the technical field of this related industry. SUMMARY OF THE INVENTION In view of this, the present invention provides an upper electrode plate that is mounted in a cavity, the cavity is provided with a pallet, the upper electrode plate includes: a first surface; a second surface corresponding to the first surface; at least one gas The diffusion hole ' extends from the first surface to the second surface for introducing the process gas; and at least one positioning hole ❹ is located on the first surface for locking the locking member to be positioned on the pallet. The invention also provides an upper electrode plate installed in the cavity, the cavity is provided with a pallet, the upper electrode plate comprises: a first surface; a second surface corresponding to the first surface; at least one gas diffusion hole, the first surface Extending to the second surface for introducing the process gas; at least one positioning hole extending from the first surface to the second surface, the locking component being locked by the first surface into the positioning hole and positioned on the pallet; and at least one hole block 'Locating in the positioning hole to block the process gas from flowing from the second surface to the locking element. The present invention provides a plasma processing apparatus comprising: a pallet; a lower electrode plate located below the pallet®; and an upper electrode plate located between the pallet and the lower electrode plate ′ including: a first surface facing the pallet; a second surface corresponding to the first surface facing the lower electrode plate; at least one gas diffusion hole extending from the first surface to the second surface for introducing the process gas to between the upper electrode plate and the lower electrode plate; and at least one positioning hole 'Located on the first surface for locking the locking element and positioned on the pallet. The present invention also provides a plasma processing apparatus comprising: a pallet; a lower electrode plate located below the pallet; and an upper electrode plate Between the pallet and the lower electrode plate, comprising: a first surface facing the pallet; The second surface 'corresponding to the first surface facing the lower electrode plate; at least one gas diffusion hole extending from the first surface to the second surface for introducing the process gas to the upper electrode plate and the lower electrode plate 200952047; at least one positioning hole Extending from the first surface to the second surface, the locking element is locked by the first surface into the positioning hole and positioned on the pallet; and at least one aperture block is located in the positioning hole to block the process gas from flowing from the second surface to the lock The solid element 'is effectively reduced the accumulation of fluoride ions at the support screw, thereby reducing the influence on the product." The preferred embodiment of the present invention and its effects are described below with reference to the drawings. [Embodiment] Figs. 2 and 3 show a first embodiment of the present invention. The plasma processing apparatus i includes: a φ cavity 10, a pallet 20, a lower electrode plate 30, and an upper electrode plate 40. The cavity 10 is substantially hollow and made of a metal material, preferably made of aluminum, but is not limited thereto, and the inner surface of the cavity 10 is usually anodoxidated to form Ming Aoqi. (anodized aluminum film), in order to invade the money. The pallet 20 is located above the cavity 1 , and is made of a metal material, preferably made of the name 'but not limited to'. Further, the pallet 20 is provided with a plurality of locking elements 21 . The lower electrode plate 30 is located in the cavity 1〇 and is disposed below the pallet 2〇 and is slightly parallel to the pallet 2”. The lower electrode plate 30 is made of a metal material, preferably made of Ming. And the surface thereof is anodized, but is not limited thereto. The upper electrode plate 40 is located in the cavity 1〇 and is disposed between the pallet 2〇 and the lower electrode plate 30. The upper electrode plate 40 is provided with a corresponding first surface 4〇a and a second surface 4〇b. Wherein, the first surface 40a is substantially parallel to the second surface 4〇b, and the first surface 4〇a faces the pallet 2〇, and the second surface 働 faces the lower electrode plate 3〇. In addition, the upper electrode plate 4 is provided with a plurality of gas diffusion holes 41 and a plurality of positioning holes 42 extending from the first surface 40a to the second surface 40b for introducing the process gas to the upper electrode plate 4 and the lower electrode plate. Between 30. The positioning hole 42 is located on the first surface 4〇3 and 200952047 does not extend to the second surface 4〇b for locking the locking member 21, and the upper electrode plate 40 is positioned on the plate 20. The imaginary diffusion hole 41 described above is provided with a first diffusion portion at the first surface gamma, for example, a second diffusion portion 412 is provided on the second surface. The first diffusion portion 412 is tapered from the first surface gaze toward the second surface 40b, and the second diffusion portion 412 is planarly oriented from the _surface gaze toward the second surface 働. The gas diffusion hole 41 is provided with a communication portion 413 that connects the first diffusion portion and the second diffusion portion 412' to connect the first diffusion portion 411 with the second diffusion portion 412. Here, the structure and shape of the gas diffusion hole 41 are merely exemplified, but the present invention is not limited thereto. In other embodiments, the gas diffusion holes 41 may be perforated or other structures and shapes, and the artisan may adjust the structure according to actual needs. The device of the present embodiment further includes a (four) health unit (9) located above the pallet 2 for supplying process gas to the cavity, wherein the process gas may be sulfur hexafluoride, nitrogen trifluoride or tetrafluorocarbon. The chemical or chemical vaporization is carried out, but the invention is not limited thereto. When the gas supply unit 60 supplies the process gas, the process gas passes through the pallet 2 and flows into the cavity 10, and flows into the first diffusion portion 41 of the gas diffusion hole 41 from the first surface 4〇a of the upper electrode plate 40. The second diffusion portion 412 flows out through the communication portion 413. The process gas is guided to the second surface 4〇b of the upper electrode plate 4〇 and the lower electrode plate 30 by the gas diffusion hole 41, thereby preventing the process gas from flowing from the second surface 40b to the positioning hole, and preventing the process gas The ions 7〇 are deposited at the locking element 21, causing the product to produce a chromatic aberration (Mura) at the corresponding point. 4 and 5 show a second embodiment of the present invention. In this embodiment, the positioning hole of the upper electrode plate 40 extends from the first surface 40a to the second surface 2009b of the 200952047, so that the locking component 21 is locked into the positioning hole 42 by the first surface 4〇a, thereby making the upper electrode plate 40 is positioned on the pallet 20. In addition, the upper electrode plate 4 is provided with a sealing block 45 at a suitable position in the positioning hole 42. Here, the sealing block 45 may be made of a metal material, preferably made of aluminum, but the invention is not limited thereto. . The positioning hole 42 described above is provided with a first positioning portion 421 at the first surface 4a, and a second positioning portion 422 is provided at the second surface 40b. The first positioning portion 421 is tapered from the first surface 4 toward the second surface 4〇b, and the second positioning portion 422 is tapered from the first surface 4〇a toward the second surface 4. The positioning hole 42 is provided with a neck portion 423 connecting the first positioning portion 421 and the second positioning portion 422, so that the first positioning portion is similar to the second positioning portion. The structure and shape of the positioning hole 42 are only For example, the present invention is not limited thereto. In other embodiments, the positioning holes may be perforated or other structures and shapes, and the related art may adjust the structure according to actual needs. Further, the locking element 21 is locked. The first positioning portion 421 of the positioning hole 42 may be disposed on the second positioning portion 422 or the neck portion 423. The position of the sealing block 45 is merely an example, but the invention is not limited thereto. It can also be changed or adjusted according to actual needs. When the gas supply unit 6 is supplied with the process gas, the process gas passes through the pallet 2〇 and flows into the cavity 1〇, and flows into the gas from the first surface 40a of the upper electrode plate 40. The first diffusion portion buckle of the diffusion hole 41 flows out through the communication portion 413 to the second expansion a portion 412. The process gas is guided by the gas diffusion hole 41 between the second surface 4b of the upper electrode plate 40 and the lower plate 3, and the light gas flows from the second surface 40b to the positioning hole through the sealing hole. The block 45 blocks the process gas from flowing to the first positioning portion 421 to prevent the ions 7〇 in the process gas from accumulating on the locking member 21. The present invention uses the locking member to position the upper electrode plate on the pallet to prevent the upper electrode from being in the long-term. In the case of use, a problem of bending occurs, and the positioning hole of the upper electrode plate is designed to be sealed (the positioning hole is located on the first surface without extending to the second surface) or a sealing block is provided to avoid ions in the process gas. Accumulating at the locking component of the upper electrode causes the product to produce chromatic aberration (Mura), thereby improving the quality and yield of the product. Although the technical content of the present invention has been disclosed above in the preferred embodiment, it is not limited to In the present invention, any changes and modifications made by those skilled in the art without departing from the spirit of the invention are intended to be included in the scope of the present invention. Please refer to the definition of patent scope. 200952047 [Simple description of the diagram] Figure 1 is a schematic diagram of a conventional plasma enhanced chemical vapor deposition (PECYD) process machine. Figure 2 is a diagram of the first embodiment of the present invention. 3 is a schematic view of a top electrode plate according to a first embodiment of the present invention. Fig. 4 is a schematic view showing a plasma processing apparatus according to a second embodiment of the present invention. Schematic diagram of the electrode plate above the example. [Main component symbol description]
1............電漿處理裝置 10............腔體 20 ............托板 21 ............鎖固元件 30............下電極板 40 ............上電極板 40a...........第一表面 40b...........第二表面 41 ............氣體擴散孔 411 ...........第一擴散部 412 ...........第二擴散部 413 ...........連通部 42 ............定位孔 421 ...........第一定位部 422 ...........第二定位部 11 200952047 423 ...........辦p 45............封孔塊 60............氣體供應單元 70............離子 A1............氣體擴散系統1............The plasma processing apparatus 10............cavity 20............table 21.. ..........locking element 30............lower electrode plate 40.........upper electrode plate 40a.... .......the first surface 40b...........the second surface 41............the gas diffusion hole 411 ........ ...first diffusing portion 412 ........... second diffusing portion 413 ........... communicating portion 42 ......... Positioning hole 421 ...........first positioning portion 422 ........... second positioning portion 11 200952047 423 ........... 45............sealing block 60............gas supply unit 70.........ion A1... .........gas diffusion system
All...........上電極 A111...........氣孔All...........Upper electrode A111...........Pneumatic hole
A12...........下電極 A2............托板 A3............氣體供應單元A12........... lower electrode A2............ pallet A3............gas supply unit
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