TW200945410A - Vacuum apparatus, vacuum processing system and pressure control method of vacuum chamber - Google Patents

Vacuum apparatus, vacuum processing system and pressure control method of vacuum chamber Download PDF

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TW200945410A
TW200945410A TW097150691A TW97150691A TW200945410A TW 200945410 A TW200945410 A TW 200945410A TW 097150691 A TW097150691 A TW 097150691A TW 97150691 A TW97150691 A TW 97150691A TW 200945410 A TW200945410 A TW 200945410A
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vacuum
gas
pressure
chamber
switching mechanism
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TW097150691A
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TWI471896B (en
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Yuki Nabeyama
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a vacuum device, a vacuum treating system and a pressure control method of vacuum chamber. The rapid opening of gate valve can be prevented at the state that the supply of air for the action of gate valve in the vacuum chamber is insufficient. In a pressure control mechanism (201), when the air supplying into a cylinder (123) is stopped, the port of mechanical valve (121) is switched, and a pneumatic valve (113) is opened. The external gas gradually flows into a conveying chamber (3) in the vacuum state through a vacuum leakage port (109), a gas introduction tube (111) and a communicating hole (107). The pressure control of conveying chamber (3) is executed with a one-way valve (103) and a buffer vessel (105) at a state that the state of gas for the action of cylinder (47) is ensured. Therefore, the rapid opening of gate valve (7b) can be prevented.

Description

200945410 九、發明說明 【發明所屬之技術領域】 本發明係關於對例如平面面板顯示器（FPD )用之玻 璃基板或半導體晶圓等之被處理體，在真空條件執行電槳 處理之真空裝置’具備有該真空裝置之真空處理系統及真 空室之壓力控制方法。[Technical Field] The present invention relates to a vacuum apparatus that performs electric paddle processing under vacuum conditions, for example, a glass substrate or a semiconductor wafer for a flat panel display (FPD). There is a vacuum processing system for the vacuum device and a pressure control method for the vacuum chamber.

【先行技術】 在液晶顯示器（LCD)所代表之FPD或半導體裝置之 製造過程中，在真空下對被處理體施予蝕刻、成膜等之各 種處理。爲了利用電漿執行上述處理，使用具備有可抽真 空之真空處理室之真空處理系統。 真空處理系統中，具備與當作對被處理體之處理容器 的真空處理室鄰接，將被處理體搬運至該真空處理室之搬 運裝置的搬運室。搬運室通常與真空處理室是相同被維持 真空狀態。在真空狀態之搬運室和大氣壓開放之真空處理 系統之外部之間，爲了執行被處理體之交接，配置有構成 能夠切換真空狀態和大氣壓開啓狀態之真空預備室（裝載 鎖定室）。搬運室和真空預備室係藉由用以搬入搬出被處 理體之開口部而連通。在開口部設置有閘閥，阻斷搬運室 和真空預備室之間。即是，在使真空預備室內呈大氣壓開 啓之狀態下，藉由閘閥確保鄰接之真空狀態之搬運室之間 的氣密性。 閘閥之開關係利用自設置真空處理系統之工場之氣體 -5- 200945410 供給源（氣體壓縮器）所供給之動作用氣體之壓力而執行 。具體而言，閘閥係藉由動作用氣體之壓力，抵抗大氣壓 開啓狀態之真空預備室之間的壓力差而將搬運室內維持真 空狀態。因此，當於停電等之時工場動力下降或停止，自 氣體供給源所供給之氣體不足時，動作用氣體之壓力下降 ，閘閥則無法承受壓力差，產生急速被開啓之事態。當閘 閥急速被開啓之時，大氣快速流進搬運室內，有使搬運室 內之被處理體或構成構件破損之問題。 【發明內容】 (發明所欲解決之課題） 在真空處理系統中，爲了檢測自氣體供給源所供給之 氣體不足或停止，也執行在使閘閥動作之氣體之供給路徑 上配備壓力開關或壓力感測器。但是，壓力感測器或壓力 開關因根據電性訊號檢測氣壓下降等，故有例如因停電而 停止電力供給之時無法使用之問題。 本發明係鑑於上述情形，其目的在於即使對配備在真 空室之閘閥所供給之動作用氣體不足之時，亦可以防止閘 閥急速被開啓之真空裝置。 (用以解決課題之手段） 本發明所涉及之真空裝置屬於具備藉由自氣體供給源 所供給之動作用氣體而動作之閘閥，和藉由上述閘閥被維 持真空狀態之真空室的真空裝置，該真空裝置具備有：爲 -6 - 200945410 了將外部氣體導入至上述真空室內，被貫通形成於該真空 室之壁的連通孔；和一端側被連接於上述連通孔，另一端 形成有真空洩漏用埠之配管；和被配置在上述配管，藉由 第1控制用氣體進行開關，切換導入來自上述真空洩漏用 埠之外部氣體的第1開關機構。然後，在本發明所涉及之 真空裝置中，上述第1開關機構係當上述第1控制用氣體 之供給壓力成爲特定壓力以下時則被開啓，使外部氣體從 0 上述真空洩漏用埠導入至上述真空室。 本發明所涉及之真空裝置即使在從上述氣體供給源至 上述閘閥之上述動作用氣體之供給路徑之途中又具備有逆 止閥亦可。 再者’本發明所涉及之真空裝置中，上述第1控制用 氣體即使係藉由在較上述逆止閥接近上述氣體供給源之位 置’自上述動作用氣體之供給路徑分歧之供給路徑被供給 的與上述動作用氣體相同系統之氣體亦可。 Φ 再者’本發明所涉及之真空裝置即使在上述動作用氣 體之供給路徑中較上述逆止閥接近於上述閘閥之位置，又 具備事先貯留上述動作用氣體之緩衝槽亦可。 再者’本發明所涉及之真空裝置即使又具備控制上述 第1開關機構之開關的開關控制部亦可。此時，開關控制 部即使具備有切換對上述第1開關機構供給或阻斷上述第 1控制用氣體的第2開關機構，和以與上述動作用氣體相 同系統之第2控制用氣體動作而執行上述第2開關機構之 切換的致動器亦可。然後’在本發明所涉及之真空裝置中 200945410 ，上述致動器即使當上述第2控制用氣體之供給壓力成爲 特定壓力以下時，切換上述第2開關機構，阻斷對上述第 1開關機構供給上述第1控制用氣體亦可。 再者，在本發明所涉及之真空裝置中，上述開關控制 部即使具備有介於上述致動器和上述第2開關機構之間， 藉由推彈力調節上述第2開關機構之切換時序的推彈構件 亦可。 再者，本發明所涉及之真空裝置即使於上述真空洩漏 用埠連接惰性氣體供給源亦可。 本發明所涉及之真空處理系統係屬於在真空狀態對被 處理體執行特定處理之真空處理系統，具備有上述真空裝 置。 本發明所涉及之真空處理系統中，上述真空室即使爲 將被處理體搬運至對被處理體執行特定處理之真空處理室 亦可。或是，上述真空室即使係爲了將被處理體搬入搬出 至真空處理系統內而構成能夠切換大氣壓開啓狀態和真空 狀態之真空預備室亦可。 再者’本發明所涉及之真空處理系統即使爲對被處理 體執行電漿處理之電漿處理系統亦可。 本發明所涉及之真空室之壓力控制方法係屬於在具備 有藉由自氣體供給源所供給之動作用氣體而動作之閘閥， 和藉由上述閘閥被維持真空狀態之真空室的真空裝置，控 制上述真空室之壓力的真空室之壓力控制方法。在本發明 所涉及之真空室之壓力控制方法中，該真空裝置具備有： -8- 200945410 爲了將外部氣體導入至上述真空室之連通孔；和一端側被 連接於上述連通孔，另一端形成有真空洩漏用埠之配管； 和被配置在上述配管，藉由第1控制用氣體進行開關，切 換導入來自上述真空洩漏用埠之外部氣體的第1開關機構 ;和被設置在從上述氣體供給源至上述閘閥之上述動作用 氣體之供給路徑之途中的逆止閥。然後，在本發明所涉及 之真空室之壓力控制方法中，在使上述真空室成爲真空之 Φ 狀態下，自上述氣體供給源被供給之動作用氣體之壓力下 降之時，一邊藉由上述逆止閥防止上述動作用氣體之逆流 ’一邊開啓上述第1開關機構而自上述真空洩漏用埠將外 部氣體導入至上述真空室’並使上述真空室之壓力接近於 大氣壓。 再者’本發明所涉及之真空室之壓力控制方法中，在 上述動作用氣體之供給路徑中較上述逆止閥接近於上述閘 閥之位置’又具備事先貯留上述動作用氣體之緩衝槽亦可 Φ 以確保上述動作用氣體。 再者’本發明所涉及之真空室之壓力控制方法中，上 述第1控制用氣體即使是藉由在較上述逆止閥接近上述氣 體供給源之位置’自上述動作用氣體之供給路徑分歧之供 給路徑被供給的與上述動作用氣體相同系統之氣體，當上 述第1控制用氣體之供給壓力成爲特定壓力以下時，開啓 上述第1開關機構，將外部氣體自上述真空洩漏用埠導入 至上述真空室亦可。 再者’本發明所涉及之真空室之壓力控制方法中，上 -9- 200945410 述真空裝置即使又具備控制上述第1開關機構之開關的開 關控制部亦可。該開關控制部即使具備有切換對上述第1 開關機構供給或阻斷上述第1控制用氣體的第2開關機構 ，和以與上述動作用氣體相同系統之第2控制用氣體動作 而執行上述第2開關機構之切換的致動器亦可。此時，當 上述第2控制用氣體之供給壓力成爲特定壓力以下時，即 使致動器切換上述第2開關機構，阻斷對上述第1開關機 構供給上述第1控制用氣體，開啓上述第1開關機構將外 部氣體從上述真空洩漏用埠導入至上述真空室亦可。 再者，在本發明所涉及之真空室之控制方法中，即使 推彈構件介於上述致動器和上述第2開關機構之間，藉由 該推彈構件調節上述第2開關機構之切換時序亦可。 再者，本發明所涉及之真空室之壓力控制方法中，即 使自上述真空洩漏用埠導入之外部氣體爲惰性氣體亦可。 〔發明效果〕 若藉由本發明之真空裝置於中斷自氣體供給源供給氣 體等之時，可以開啓第1開關機構自真空洩漏用埠逐漸將 外部氣體導入至真空室內。因此，可以藉由閘閥緩和維持 真空狀態之真空室之內外之壓力差，防止閘閥急速被開啓 。因此，達到可以防止因閘閥急速開啓所產生之真空室內 之被處理體或機材破損等之事故的效果。 再者，在本發明之真空裝置中，利用第1控制用氣體 控制第1開關機構之開關。如此一來，因第1開關機構之 -10- 200945410 開關不需要電力，故即使於藉由停電等停 體之時’亦可使第1開關機構發揮功能。 停止供給電力之時無法動作的壓力感測器 電性機器爲優良。 【實施方式】 〔第1實施型態〕 以下’針對本發明之實施型態，參照 明。在此’針對具備有本發明之第1實施 的基板處理系統舉例進行說明。第1圖爲 基板處理系統之真空處理系統1 〇 〇之斜視 開啓各腔室之蓋體（省略圖示）之狀態下 部之俯視圖。該真空處理系統1 〇 〇構成具 la、lb' lc之多腔室構造。真空處理系統 對例如FPD用之玻璃基板（以下，單稱爲 行電漿處理之電漿處理系統。並且，就以 液晶顯示器（LCD)、電激發光（Electro EL)顯示器、電漿顯示面板（PDP)等。 真空處理系統1〇〇係多數大型腔室連 在中央部配置搬運室3，鄰接於其三方之 板S執行電漿處理之3個製程腔室la、U 接於搬運室3之殘留之一方之側面，配設 。該些3個製程腔室la、lb、lc、搬運室 5中之任一者皆構成真空腔室。搬運室3 止供給動作用氣 此點比起使用於 或壓力開關等之 圖面予以詳細說 型態之真空裝置 槪略性表示當作 圖，第2圖爲在 ，槪略性表示內 有多數製程腔室 100係構成用以 r「基板」）S執 FPD而言例示有 Luminescence : 結成十字形狀。 側面配設有對基 >、1C。再者，鄰 有裝載鎖定室5 3及裝載鎖定室 和各製程腔室1 a -11 - 200945410 、lb、lc之間設置有無圖式之開口部，在該開口部各配設 有具有開關功能之閘閥7a。再者，在搬運室3和裝載鎖定 室5之間配設有閘閥7b。閘閥7a、7b係在關閉狀態下氣 密密封各腔室之間’並且在打開狀態下使腔室間連通而可 移送基板S。再者’即使在裝載鎖定室5和外部大氣環境 之間配備有閘閥7c ’使在關閉狀態下維持裝載鎖定室5之 氣密性，並且在打開狀態下可在裝載鎖定室5內和外部之 間移送基板S。 在裝載鎖定室5之外側，設置有兩個匣盒指示器9a、 9b。在各匣盒指示器9a、9b上載置有各收容基板S之匣 盒11a、lib。在各匣盒11a、lib內於上下隔著間隔多段 配置有基板S。再者，各匣盒11a、lib藉由升降機構部 13a、13b構成各升降自如。在本實施型態中，構成在例如 卡匣11a可以收容未處理基板S，在另一方之匣盒lib可 以收容處理完之基板S。 在該些兩個匣盒11a、lib之間設置有用以搬運基板S 之搬運裝置15。該搬運裝置15具備有被設置成上下兩段 當作基板保持具之叉架17a及叉架17b，和可前進、退避 及旋轉支持該些叉架17a、叉架17b之驅動部19，和支持 該驅動部19之支持台21。 製程腔室1 a、1 b、1 c係被構成可以在其內部空間維 持特定減壓環境（真空狀態）。在各製程腔室la、lb、lc 內如第2圖所示般，配備有當作載置基板S之載置台的承 載器2。然後，各製程腔室la、lb、lc係在將基板S載置 -12- 200945410 在承載器2之狀態下，對基板S，執行例如真空條件下之 蝕刻處理、灰化處理、成膜處理等之電漿處理。 在本實施型態中，即使以3個製程腔室1 a、1 b、1 c 執行同種處理亦可，即使對每製程腔室執行不同種類之處 理亦可。並且，製程腔室之數量並不限定於3個，即使爲 4個以上亦可。 搬運室3係與真空處理室之製程腔室la〜ic相同， 被構成可以保持於特定減壓環境之真空室。在搬運室3之 中’如第2圖所示般，配置有搬運裝置23。搬運裝置23 構成能夠旋轉，具備有前進、退避而搬運基板S之梳齒狀 叉架25。然後，藉由搬運裝置23，在3個製程腔室la、 lb、lc及裝載鎖定室5之間執行基板S之搬運。搬運裝置 23具備被設置成上下兩段枝搬運機構，構成各個獨立而可 以執行基板S之搬出搬入。 當作真空預備室之裝載鎖定室5係被構成與各製程腔 室la〜lc及搬運室3相同可以保持於特定減壓環境。裝 載鎖定室5爲用以在位於大氣環境之匣盒lla、lib和減 壓環境之搬運室3之間執行基板S之交接。裝載鎖定室5 在反覆大氣環境和減壓環境之關係上，係構成極力縮小其 內容積》在裝載鎖定室5上下兩段設置有基板收容部27 ( 在第2圖中僅圖示上段），在各基板收容部27隔著間隔 設置有支持基板S之多數緩衝器28。在該些緩衝器28之 間隔成爲梳齒狀之叉架（例如叉架25 )之退避溝。再者， 在裝載鎖定室5內，設置有抵接於矩形狀基板S之互相對 -13- 200945410 向的角部附近而執行定位之***29。 如第2圖所示般，真空處理系統1〇〇之各構成部成爲 被連接於控制部30而被控制之構成（在第1圖中省略圖 式）。控制部30具備有：具有CPU之控制器31、使用者 介面32和記憶部33。控制器31係在真空處理系統100中 ’統籌例如製程腔室la〜lc、搬運裝置15、搬運裝置23 等之各構成部而控制。使用者介面32係由工程管理者爲 了管理真空處理系統100執行指令輸入操作之鍵盤，或使 真空處理系統100之運轉狀況可觀視而所顯示之顯示器等 所構成。記憶部33係保存有處理程式，該處理程式記錄 有用以在控制器3 1之控制下實現在真空處理系統1 〇〇所 實行之各種處理之控制程式（軟體），或處理條件資料等 。使用者介面3 2及記憶部3 3係被連接於控制器3 1。 然後，依其所需，以來自使用者介面3 2之指示等自 記憶部3 3叫出任意處理程式，使製程控制器3 1實行，依 此，在製程控制器31之控制下，執行在真空處理系統1 0 0 中的所欲處理。 上述控制程式或處理條件資料等之處理程式係可以利 用儲存於電腦可讀取之記憶媒體，例如CD-ROM、硬碟、 軟碟、快閃記憶體等之狀態者。或是，亦可自其他裝置經 例如專用迴線隨時傳送前述處理程式而在線上利用。 接著，針對構成上述般之真空處理系統1〇〇動作予以 說明。 首先，使搬運裝置15之兩片叉架17a、17b進退驅動 -14-[Prior Art] In the process of manufacturing an FPD or a semiconductor device represented by a liquid crystal display (LCD), various processes such as etching, film formation, and the like are applied to a target object under vacuum. In order to perform the above processing using plasma, a vacuum processing system having a vacuum processing chamber capable of vacuuming is used. The vacuum processing system includes a transfer chamber that is adjacent to a vacuum processing chamber that is a processing container for the object to be processed, and that transports the object to be transported to the vacuum processing chamber. The transfer chamber is usually maintained in the same vacuum state as the vacuum processing chamber. In order to perform the transfer of the object to be processed between the transfer chamber in the vacuum state and the outside of the vacuum processing system in which the atmospheric pressure is opened, a vacuum preparation chamber (load lock chamber) constituting a switchable vacuum state and an atmospheric pressure open state is disposed. The transfer chamber and the vacuum preparation chamber are connected by being carried in and out of the opening of the object to be processed. A gate valve is provided at the opening to block the between the transfer chamber and the vacuum preparation chamber. That is, the airtightness between the transfer chambers in the adjacent vacuum state is ensured by the gate valve in a state where the vacuum chamber is opened at the atmospheric pressure. The opening relationship of the gate valve is performed by the pressure of the operating gas supplied from the supply source (gas compressor) from the gas chamber of the vacuum processing system. Specifically, the gate valve maintains the inside of the conveyance chamber in a vacuum state by the pressure difference between the vacuum supply chambers in the atmospheric pressure opening state by the pressure of the operating gas. Therefore, when the power of the factory is lowered or stopped at the time of power failure or the like, when the gas supplied from the gas supply source is insufficient, the pressure of the operating gas is lowered, and the gate valve cannot withstand the pressure difference, causing a situation in which the rapid opening is caused. When the gate valve is rapidly opened, the atmosphere rapidly flows into the transfer chamber, which may cause damage to the object to be processed or components in the transfer chamber. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) In a vacuum processing system, in order to detect insufficient or stopped gas supplied from a gas supply source, a pressure switch or a pressure sense is also provided on a supply path of a gas for operating a gate valve. Detector. However, since the pressure sensor or the pressure switch detects a drop in the air pressure or the like based on the electrical signal, there is a problem that the power supply cannot be used when the power supply is stopped due to a power failure. The present invention has been made in view of the above circumstances, and an object thereof is to prevent a vacuum device in which a gate valve is rapidly opened even when an operating gas supplied from a gate valve provided in a vacuum chamber is insufficient. (Means for Solving the Problem) The vacuum device according to the present invention belongs to a vacuum valve including a gate valve that is operated by an operating gas supplied from a gas supply source, and a vacuum chamber that is maintained in a vacuum state by the gate valve. The vacuum apparatus includes: -6 - 200945410: a communication hole that introduces external air into the vacuum chamber and is formed through a wall of the vacuum chamber; and one end side is connected to the communication hole, and the other end is formed with a vacuum leak And a first switching mechanism that is disposed in the piping and that is switched by the first control gas to switch the introduction of the external air from the vacuum leaking crucible. In the vacuum apparatus according to the present invention, the first switching mechanism is turned on when the supply pressure of the first control gas is equal to or lower than a specific pressure, and the external air is introduced from the vacuum leak 0 to the Vacuum chamber. In the vacuum apparatus according to the present invention, a check valve may be provided in the middle of the supply path of the operating gas from the gas supply source to the gate valve. In the vacuum apparatus according to the present invention, the first control gas is supplied from a supply path that is different from a supply path of the operating gas at a position closer to the gas supply source than the check valve. The gas of the same system as the above-mentioned operating gas may be used. Φ In addition, the vacuum apparatus according to the present invention may have a buffer tank in which the operating gas is stored in advance, even in a supply path of the operating gas, which is closer to the gate valve than the check valve. Further, the vacuum device according to the present invention may have a switch control unit that controls a switch of the first switching mechanism. In this case, the switch control unit includes a second switching mechanism that switches the supply or the blocking of the first control gas to the first switching mechanism, and performs the second control gas operation in the same system as the operating gas. The actuator for switching the second switching mechanism may be used. In the vacuum device according to the present invention, in the above-mentioned actuator, when the supply pressure of the second control gas is equal to or lower than a specific pressure, the second switching mechanism is switched to block the supply of the first switching mechanism. The first control gas may be used. Further, in the vacuum apparatus according to the present invention, the switch control unit may be configured to adjust a switching timing of the second switching mechanism by a biasing force between the actuator and the second switching mechanism. The elastic member can also be used. Further, the vacuum apparatus according to the present invention may be connected to the inert gas supply source even in the vacuum leak. The vacuum processing system according to the present invention is a vacuum processing system that performs a specific treatment on a target object in a vacuum state, and is provided with the above-described vacuum apparatus. In the vacuum processing system according to the present invention, the vacuum chamber may be transported to a vacuum processing chamber that performs a specific treatment on the object to be processed. Alternatively, the vacuum chamber may be configured to be capable of switching between an atmospheric pressure open state and a vacuum state in order to carry the workpiece into and out of the vacuum processing system. Further, the vacuum processing system according to the present invention may be a plasma processing system that performs plasma treatment on the object to be processed. The pressure control method of the vacuum chamber according to the present invention is a vacuum device including a gate valve that is operated by an operating gas supplied from a gas supply source, and a vacuum chamber that is maintained in a vacuum state by the gate valve. The pressure control method of the vacuum chamber of the pressure of the above vacuum chamber. In the pressure control method of the vacuum chamber according to the present invention, the vacuum apparatus is provided with: -8-200945410 for introducing external air into the communication hole of the vacuum chamber; and one end side is connected to the communication hole, and the other end is formed. a piping for vacuum leakage, and a first switching mechanism that is disposed in the piping and that is switched by the first control gas to switch the external air from the vacuum leaking crucible; and is provided in the gas supply A check valve that is in the middle of the supply path of the operating gas of the gate valve. In the pressure control method of the vacuum chamber according to the present invention, when the pressure of the operating gas supplied from the gas supply source is lowered in the Φ state in which the vacuum chamber is vacuumed, the above-mentioned inverse The check valve prevents the counterflow of the operating gas from opening the first switching mechanism, and the outside air is introduced into the vacuum chamber from the vacuum leaking port, and the pressure of the vacuum chamber is close to atmospheric pressure. In the pressure control method of the vacuum chamber according to the present invention, the buffer gas may be stored in the supply path of the operating gas, and the buffer valve may be stored in the vicinity of the gate valve. Φ to ensure the above-mentioned operating gas. In the pressure control method of the vacuum chamber according to the present invention, the first control gas is different from the supply path of the operating gas by the position closer to the gas supply source than the check valve. When the supply pressure of the first control gas is equal to or lower than a specific pressure, the first switching mechanism is turned on, and the external air is introduced from the vacuum leaking port to the gas. The vacuum chamber is also available. Further, in the pressure control method of the vacuum chamber according to the present invention, the vacuum device of the above-mentioned -9-200945410 may have a switching control unit for controlling the switch of the first switching mechanism. The switch control unit includes the second switching mechanism that switches the supply or the blocking of the first control gas to the first switching mechanism, and operates the second control gas in the same system as the operating gas. The actuator for switching the switching mechanism can also be used. At this time, when the supply pressure of the second control gas is equal to or lower than the specific pressure, even if the actuator switches the second switching mechanism, the supply of the first control gas to the first switching mechanism is blocked, and the first first is turned on. The switching mechanism may introduce external air from the vacuum leaking crucible into the vacuum chamber. Further, in the vacuum chamber control method according to the present invention, even if the projectile member is interposed between the actuator and the second switching mechanism, the switching timing of the second switching mechanism is adjusted by the pushing member. Also. Further, in the pressure control method of the vacuum chamber according to the present invention, the external gas introduced from the vacuum leaking crucible may be an inert gas. [Effect of the Invention] When the gas or the like is supplied from the gas supply source by the vacuum device of the present invention, the first switching mechanism can be turned on to gradually introduce the outside air into the vacuum chamber from the vacuum leaking port. Therefore, it is possible to prevent the gate valve from being rapidly opened by the pressure difference between the inside and the outside of the vacuum chamber which maintains the vacuum state by the gate valve. Therefore, it is possible to prevent an accident such as damage to the object to be processed or the machine material in the vacuum chamber caused by the rapid opening of the gate valve. Further, in the vacuum apparatus of the present invention, the switch of the first switching mechanism is controlled by the first control gas. In this way, since the -10-200945410 switch of the first switching mechanism does not require electric power, the first switching mechanism can be made to function even when the vehicle is stopped by a power failure or the like. Pressure sensor that does not operate when power is stopped. Electrical equipment is excellent. [Embodiment] [First embodiment] Hereinafter, the embodiments of the present invention will be referred to. Here, an example of a substrate processing system including the first embodiment of the present invention will be described. Fig. 1 is a vacuum processing system of a substrate processing system. 斜 斜 斜 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 。 。 。 。 。 The vacuum processing system 1 〇 constitutes a multi-chamber configuration with la, lb' lc. A vacuum processing system for a glass substrate such as an FPD (hereinafter, simply referred to as a plasma processing system for plasma processing), and a liquid crystal display (LCD), an electroluminescent (Electro EL) display, and a plasma display panel ( PDP), etc. Vacuum processing system 1 Most of the large chambers are connected to the transfer chamber 3 at the center, and the three process chambers la and U that are adjacent to the three-side board S to perform plasma processing are connected to the transfer chamber 3. One of the remaining sides is disposed, and any one of the three process chambers la, lb, lc, and the transfer chamber 5 constitutes a vacuum chamber. The transfer chamber 3 is supplied with a gas for operation. Or the pressure switch, etc., the vacuum device is described in detail as a figure, and the second figure shows that a plurality of process chambers 100 are configured to r "substrate") Luminescence is exemplified in the FPD: it is formed into a cross shape. The side is equipped with a pair of bases >, 1C. Further, an opening portion is provided between the load lock chamber 53 and the load lock chamber and each of the process chambers 1 a -11 - 200945410, lb, and lc, and a switch function is provided in each of the openings Gate valve 7a. Further, a gate valve 7b is disposed between the transfer chamber 3 and the load lock chamber 5. The gate valves 7a, 7b are hermetically sealed between the chambers in the closed state and communicate between the chambers in the open state to transfer the substrate S. Further, 'even if the gate lock valve 7c' is provided between the load lock chamber 5 and the external atmospheric environment, the airtightness of the load lock chamber 5 is maintained in the closed state, and in the open state, the inside and outside of the load lock chamber 5 can be The substrate S is transferred between. On the outer side of the load lock chamber 5, two cassette indicators 9a, 9b are provided. The cassettes 11a and 11b of the respective storage substrates S are placed on the respective cassette indicators 9a and 9b. The substrate S is placed in a plurality of stages in the respective cassettes 11a and 11b in a plurality of intervals. Further, each of the cassettes 11a and 11b is configured to be lifted and lowered by the elevating mechanism units 13a and 13b. In the present embodiment, for example, the cassette 11a can accommodate the unprocessed substrate S, and the other cassette lib can accommodate the processed substrate S. A conveying device 15 for transporting the substrate S is provided between the two cassettes 11a and 11b. The conveying device 15 includes a fork frame 17a and a fork frame 17b which are provided as upper and lower stages as a substrate holder, and a driving portion 19 for supporting, retracting, and rotating the forks 17a and the forks 17b, and supporting The support table 21 of the drive unit 19. The process chambers 1a, 1b, 1c are configured to maintain a specific reduced pressure environment (vacuum state) in their internal spaces. As shown in Fig. 2, in each of the process chambers la, lb, and lc, a carrier 2 serving as a mounting table on which the substrate S is placed is provided. Then, each of the process chambers la, lb, and lc is placed on the substrate S in the state where the substrate S is placed -12-200945410 in the carrier 2, and the substrate S is subjected to, for example, etching treatment under ash conditions, ashing treatment, film formation processing. Wait for the plasma treatment. In the present embodiment, even if the same processing is performed in the three processing chambers 1a, 1b, and 1c, it is possible to perform different kinds of processing for each processing chamber. Further, the number of process chambers is not limited to three, and may be four or more. The transfer chamber 3 is configured in the same manner as the process chambers la to ic of the vacuum processing chamber, and is configured to be held in a vacuum chamber of a specific decompression environment. In the transfer chamber 3, as shown in Fig. 2, a transfer device 23 is disposed. The conveying device 23 is configured to be rotatable, and includes a comb-toothed fork 25 that conveys the substrate S while advancing and retracting. Then, the conveyance device 23 performs conveyance of the substrate S between the three process chambers la, lb, and lc and the load lock chamber 5. The conveying device 23 is provided with two upper and lower branch conveying mechanisms, and is configured to perform the loading and unloading of the substrate S independently. The load lock chamber 5, which is a vacuum preparation chamber, is configured to be held in a specific decompression environment in the same manner as each of the process chambers la to lc and the transfer chamber 3. The load lock chamber 5 is for performing the transfer of the substrate S between the cassettes 11a, 11b located in the atmosphere and the transfer chamber 3 of the pressure reducing environment. The load lock chamber 5 is configured to reduce the internal volume as much as possible in the relationship between the atmospheric environment and the decompression environment. The substrate storage portion 27 is provided in the upper and lower stages of the load lock chamber 5 (only the upper portion is shown in Fig. 2). A plurality of buffers 28 that support the substrate S are provided at intervals in the respective substrate housing portions 27. The gaps between the buffers 28 are the relief grooves of the comb-shaped fork (e.g., the fork 25). Further, in the load lock chamber 5, a positioner 29 that abuts on the vicinity of the corner of the rectangular substrate S facing the -13-200945410 direction is provided. As shown in Fig. 2, each component of the vacuum processing system 1 is configured to be connected to the control unit 30 (the drawing is omitted in Fig. 1). The control unit 30 includes a controller 31 having a CPU, a user interface 32, and a storage unit 33. The controller 31 is controlled by the vacuum processing system 100 to co-ordinate various components such as the process chambers la to lc, the conveyance device 15, and the conveyance device 23. The user interface 32 is composed of a keyboard that the engineering manager performs a command input operation for managing the vacuum processing system 100, or a display that displays the operation state of the vacuum processing system 100 in a viewable manner. The memory unit 33 stores a processing program for recording a control program (software) for realizing various processes executed in the vacuum processing system 1 under the control of the controller 31, processing condition data, and the like. The user interface 3 2 and the memory unit 3 3 are connected to the controller 31. Then, according to the instruction of the user interface 3, an arbitrary processing program is called from the memory unit 3, and the process controller 31 is executed. According to this, under the control of the process controller 31, the execution is performed. The desired processing in the vacuum processing system 100. The processing programs such as the control program or the processing condition data can be used in a state in which a computer-readable memory medium such as a CD-ROM, a hard disk, a floppy disk, or a flash memory is used. Alternatively, it may be used online from other devices via a dedicated return line, for example, by transmitting the aforementioned processing program at any time. Next, the operation of the vacuum processing system 1 described above will be described. First, the two forks 17a, 17b of the conveying device 15 are driven forward and backward -14-

200945410 ’自收容未處理基板之匣盒lla接取基板S,各輋 載鎖定室5之上下兩段基板收容部27之緩衝器28 於使叉架17a、17b退避之後，關閉裝載鎖定 大氣側之閘閥7c。之後，使裝載鎖定室5內排氣， 減壓至特定真空度。接著，打開搬運室3和裝載鐘 之間的閘閥7b，藉由搬運裝置23之叉架25，接思 於裝載鎖定室5之基板收容部27之基板S。 接著，藉由搬運裝置23之叉架25，將基板S 製程腔室la、lb、lc中之任一者，交接至承載器： ’在製程腔室la、lb、lc內對基板S實施蝕刻等 處理。接著’處理完之基板S從承載器2被交接至 置23之叉架25，自製程腔室la、lb、lc被搬出》 然後，基板S係以與上述相反之路徑，經由裝 室5，藉由搬運裝置15被收容在匣盒lib。並且， 處理完之基板S返回至原來之匣盒lla亦可。 接者’ 一面篸照第3圖及第4圖，針對被配霪 室3和裝載鎖定室5之間之閛閥7b之構造和動作 單說明。閘閥7b係自搬運室3側開關被設置在裝 室5之側壁5a的基板搬入搬出口 5b。在此，閘閥 作藉由該閘閥7b被維持真空狀態之真空室的搬運 成本實施型態所涉及之真空裝置。閘閥7b係以閉 基板S以水平姿勢搬入搬出之基板搬入搬出口 5b ’具有形成.水平縱長之閥體4 1，和支撐該閥體4 1 43a、43b，和藉由該連桿43a、43b而連結於閥體 ξ置於裝 〇 室5之 將內部 I定室5 【被收容 搬入至 2。然後 ί之特定 i搬運裝 i載鎖定 即使將 i在搬運 ;予以簡 丨載鎖定 7b和當 室3構 I塞可將 的方式 之連桿 41之能 200945410 夠升降移動之水平縱長的可動塊體45。連桿43a、43b各 被掛架於可動塊體45之左側面和閥體4 1之左側面之間， 及可動塊體45之右側面和閥體4 1之右側面之間（並且， 在第3圖及第4圖中，僅圖示左側面之連桿43a、43b)。 再者，閘閥7b具備有供給用以使可動塊體45上下移 位之驅動力的汽缸47，和導引可動塊體45之配置成垂直 的導軌49。在該導軌49之上端部，設置有抵接於可動塊 體45之上面而使可動塊體45停止之停止器51。再者，在 閥體41之上面，設置有用以迴避與頂棚部53摩擦之旋轉 體（滾筒5 5 )。 可動塊體45係與汽缸47之活塞桿47a連結，對應於 活塞桿47a之進退而於上下移位。該可動塊體45 —邊在 垂直配置之導軌49上滑動，一邊被導引。即是，當使汽 缸47動作，並使活塞桿47a於上下前出、退避時，可動 塊體45則在導軌49之導引下在垂直方向升降移動。因此 ’經可動塊體45、連桿43a、43b連結於活塞桿47a之閥 體41也在上下移位，密封基板搬入搬出口 5b，或是解除 密封基板搬入搬出口 5b。當開啓閘閥7b時，則如第3圖 所示般’閥體41被放置在低於基板搬入搬出口 5b之待機 位置’可動塊體45在較閥體41更低之待機位置待機。 由第3圖所示之開啓狀態關閉閘閥7b之時，使汽缸 47動作’而以特定行程使活塞桿47a前進（上升）。如此 一來。如第4圖所示般，可動塊體45和閥體41自各個原 位置互相平行垂直上升，閥體41之滾筒55抵接於頂棚面 -16- 200945410 53，接著可動塊體45抵接於停止器51。然後，連稈 、43b動作，將閥體41朝向基板搬入搬出口 5擠壓， 至基板搬入搬出口 5b之周圍（側壁）。於該動作之 滾筒55在頂棚面53朝水平方向轉動，依此閥體41 朝水平移動。因在基板搬入搬出口 5b之周圍，安裝 型環等之密封構件（無圖示），故閥體41可以持有 密性密封基板搬入搬出口 5 b。閘閥7b於封閉狀態之 裝載鎖定室5內則被設置成大氣壓開啓狀態，搬運室 被設置成真空狀態。即是，閥體4 1自真空側抵抗大 而密封基板搬入搬出口 5b。 由第4圖所示之關閉狀態開啓閘閥7b之時，使 47動作，使汽缸47動作並使活塞桿47a僅下降與前 作時相同之行程。依此，藉由密封過程之動作之相反 ，可動塊體45及閥體41各返回至原來之待機位置， 基板搬入搬出口 5b之密封。 使閘閥7b予以開關驅動之汽缸47，係藉由自當 置有真空處理系統100之工場全體之動力一部分的氣 給源所供給之動作氣體而動作。氣體供給源不僅閘閥 也分配於真空處理系統100內之其他裝置，或外部系 因此，由於某些情形例如急速增加工場內所需之氣體 停電、空氣壓縮器故障等之原因，當停止或減少供給 用氣體時，則有閘閥7b無法維持於關閉狀態之情形。 當停止或減少供給驅動汽缸47之動作用氣體之 閥體41及可動塊體45無法承受大氣壓，閥體41從 43a 推壓 時， 順暢 有〇 高氣 時， 3則 氣壓 汽缸 進動 動作 解除 作設 體供 7b - 統。 ，或 動作 時， 基板 -17- 200945410 搬入搬出口 5b被推離，並且可動塊體45下降而開啓基板 搬入搬出口 5b。然後，空氣急速從大氣壓之裝載鎖定室5 進入至真空側之搬運室3。如此急速之壓力變動及空氣流 入所導致之衝擊，係嚴重到可使搬運室3內之基板S或搬 運裝置23破損。 第5圖係本實施型態所涉及之真空處理系統1〇〇中之 壓力控制機構200之構成。在真空處理系統100中，於停 止或減少供給來自氣體供給源3 0 0之動作用氣體之時，爲 了防止閘閥7b急速被開啓之事態，設置有壓力控制機構 200。針對該壓力控制機構200，一面參照第5圖一面予以 說明。 壓力控制機構2 00於停止或減少供給來自氣體供給源 3 00之動作用氣體之時，將閘閥7b維持於特定時間密封狀 態，並且使真空側之搬運室3內之壓力上升緩和與裝載鎖 定室5內之壓力差。壓力控制機構200具備有被設置在將 來自氣體供給源3 00之動作用氣體供給至閘閥7b之汽缸 47的氣體供給配管101上之逆止閥103，和被配置在較該 逆止閥1 03靠氣體供給方向之下游側的氣體供給配管1 0 1 上之緩衝槽105，以作爲連接於閘閥7b者。 再者，壓力控制機構200具備有被貫通形成在搬運室 3之壁（例如底壁3〇之連通孔107，和一端側被連接於 該連通孔107，另一端側形成真空洩漏用埠109之狹隘流 路的氣體導入配管111，和當作開閉以該氣體導入配管 111所產生之流路之第1開關機構的氣體操作閥113，以 -18- 200945410 作爲附屬於搬運室3者。在氣體操作閥丨1 3連接有控制用 氣體配管1 1 5，藉由當作經該控制用氣體配管丨丨5而被供 給之第1控制用氣體控制氣體操作閥1 1 3之開關。 被設置在氣體供給配管1 0 1上之逆止閥1 03，係防止 因停電等之理由，使得氣體供給源3 00停止，並且中斷動 作用氣體之供給之時，氣體從相對性成爲正壓之閘閥7b 側逆流至成爲負壓之氣體供給源3 0 0側之事態。再者，藉 由在較逆止閥1 03靠氣體供給路徑之下游側設置貯留特定 量氣體之緩衝槽1 05，則可以確保爲了在特定時間持續驅 動閘閥7b之汽缸47所需量的氣體。如此一來，逆止閥 103和緩衝槽105係發輝於中斷來自氣體供給源300之動 作用氣體之供給時，可以同時動作確保動作用氣體，並將 藉由閘閥7b所產生之密封狀態極力維持較長之功能。因 此，於例如短時間停止來自氣體供給源3 00供給動作用氣 體之時等，則可能一邊以逆止閥1 〇3防止氣體逆流’一邊 使用蓄積於緩衝槽1 〇5內之動作用氣體而將閛閥7b維持 在密封狀態。 接著，針對被設置在搬運室3之連通孔1〇7和氣體導 入配管1 1 1和氣體操作閥1 1 3之作用予以說明。連通孔 107爲被形成在搬運室3之底壁3a的貫通孔。並且’連通 孔1 07即使形成在搬運室3之側壁亦可。在連通孔1 〇7連 接有氣體導入配管111。 氣體導入配管111具備狹隘之流路’形成持有大流路 阻抗。在氣體導入配管111之途中，配設有氣體操作閥 -19- 200945410 113。再者，在氣體導入配管111之另一端側，形成有導 入外部氣體之真空洩漏用埠109。即是，連通孔107經氣 體導入配管111連接於真空洩漏用埠109，藉由氣體導入 配管111所產生之流路係被構成依據氣體操作閥113而控 制開關。 氣體操作閥1 1 3係藉由經控制用氣體配管1 1 5被供給 之第1控制用氣體而動作之常開型的閥。氣體操作閥1 1 3 在特定壓力以上執行藉由經控制用氣體配管1 1 5被供給之 第1控制用氣體之供給的期間係維持關閉狀態。控制用氣 體配管115爲供給驅動閘閥7b之汽缸47之動作用氣體的 氣體供給配管101之分歧。即是，爲自與上述第1控制用 氣體和上述動作用氣體相同之氣體供給源300所供給之相 同系統之氣體。控制用氣體配管115在較逆止閥1〇3靠氣 體供給方向之上流側，自氣體供給配管1 〇 1分歧。 如上述般’藉由控制用氣體配管1 1 5所供給之第1控 制用氣體，因係與驅動閘閥7b之汽缸47的動作用氣體相 同系統之氣體’故在執行動作用氣體之供給期間也持續供 給第1控制用氣體。但是’當產生因例如停電等停止或減 少供給來自氣體供給源3 00之動作用氣體之事態時，也停 止或減少供給第1控制用氣體。當上述第1控制用氣體成 爲特定壓力以下例如O.IMPa以下之時，氣體操作閥n3 則切換成開啓狀態。 當開啓氣體操作閥113時’成爲自真空浅漏用淳1〇9 經氣體導入配管111及連通孔107而連通至搬運室3內之 -20- 200945410 狀態。氣體導入配管111係被設定成流路阻抗大。被設定 成例如搬運室3之容積爲12m3，真空時之內部壓力爲1 Pa 之時，當氣體操作閥1 1 3被開啓時，則以大約1 . 5〜2小 時搬運室3內成爲大氣壓。 如此一來，構成由於停電等之情形，使得停止或減少 供給自氣體供給源3 00所供給之氣體時，氣體操作閥1 1 3 被開啓，例如大氣等之外部氣體經真空洩漏用埠109、氣 體導入配管111及連通孔而逐漸流入至真空狀態之搬 運室3內。然後，藉由導入外部氣體，真空狀態之搬運室 3內之壓力因逐漸接近於大氣壓，故從大氣壓之裝載鎖定 室5側施加至閘閥7b之閥體4 1之壓力逐漸緩和。 如上述般，在本實施型態中，於中斷來自氣體供給源 300之氣體之時，藉由逆止閥1〇3和緩衝槽105，可以確 保爲了維持該面閘閥7b之關閉狀態所需之氣體（即是爲 了驅動汽缸47所需之氣體）。在該狀態下，開啓連接於 搬運室3之氣體操作閥113而自流路阻抗大之狹隘氣體導 入配管111，將外部氣體逐漸導入至真空狀態之搬運室3 內，依此可以緩和裝載鎖定室5和搬運室3之間的壓力差 ，防止閘閥7b急速被開啓之事態。因此，達到即使在停 止供給用以使閘閥7b動作之動作用氣體之時，亦可以防 止因閘閥7b急速開啓而產生基板S或搬運裝置23破損等 之事故的效果。 再者，壓力控制機構2 0 0係利用與閘閥7 b之動作用 氣體相同系統（相同氣體供給源3 00 )之第1控制用氣體 -21 - 200945410 ，控制氣體操作閥113之開關，爲不需要電力之機構。因 此，壓力控制機構200即使於因停電等停止供給動作用氣 體之時，也能發揮功能。此點比起在氣體供給配管101裝 備於停止供給電力之時無法動作的壓力感測器或壓力開關 等之電性機器之時爲優良。 並且，在第5圖中，於較氣體供給配管101上之逆止 閥103靠氣體供給方向下游側裝配有緩衝槽105。但是， 僅藉由從逆止閥103至汽缸47爲止之間的氣體供給配管 1 0 1，可以確保在特定時間可以將閘閥7b維持在關閉狀態 之充分量的氣體時，即使不設置緩衝槽105亦可。 〔第2實施型態〕 接著，一面參照第6圖以及第8圖，針對本發明之第 2實施型態所涉及之壓力控制機構20 1予以說明。第6圖 係本實施型態所涉及之壓力控制機構201之構成。該壓力 控制機構20 1係與第1實施形態之壓力控制機構200相同 ，爲可適用於真空處理系統1〇〇者。因此，在此以與第1 實施型態不同點爲中心進行說明。第6圖至第8圖中，針 對與第1實施型態相同之構成賦予相同符號，省略說明。 壓力控制機構201具備有被設置在將來自氣體供給源 3 00之動作用氣體供給至閘閥7b之汽缸47的氣體供給配 管101上之逆止閥103，和被配置在較該逆止閥103靠氣 體供給方向之下游側的氣體供給配管101上之緩衝槽105 ，以作爲連接於閘閥7b者。 -22- 200945410 再者，壓力控制機構20 1具備有被設置在搬運室3之 底壁3a之連通孔1 07，和具有一端側被連接於該連通孔 1 07，另一端側形成有真空洩漏用埠1 09之狹隘流路的氣 體導入配管111，和當作開關該氣體導入配管111之第1 開關機構之氣體操作閥113，和當作切換氣體流入至該氣 體操作閥113之第2開關機構的機械閥121，和當作執行 切換機械閥121之致動器的汽缸123，和存在於機械閥 1 2 1和汽缸1 2 3之間的推彈構件之彈簧1 2 5，以作爲附屬 於搬運室3者。機械閥1 2 1和汽缸1 2 3和彈簧1 2 5係當作 控制氣體操作閥1 1 3之開關的開關控制部而發揮功能。 在氣體操作閥113連接有控制用氣體配管115，藉由 經該控制用氣體配管1 1 5而被供給之第1控制用氣體控制 氣體操作閥1 1 3之開關。在本實施型態中，控制用氣體配 管115係在途中分歧成將第1控制用氣體供給至機械閥 1 2 1之配管1 1 5 a，和將第2控制用氣體供給至汽缸1 23之 配管1 15b。 逆止閥103及緩衝槽105之構成及作用因與第1實施 型相同’故省略說明。再者，連通孔107和氣體操作閥 113之構成及作用也與第1實施形態相同。 第7圖及第8圖係放大表示開關控制部之構成。機械 閥1 2 1爲具有彈簧1 2 1 a，利用該彈簧1 2 1 a之推彈力執行 開/關之切換的開關部121b，和具有三個埠A、B、C之3 埠閥。埠A被連接於配管115a。璋B係經配管115c而連 接於氣體操作閥113。埠C被連接於大氣開放口 127。 -23- 200945410 第7圖爲機械閥121爲「開」’經從埠A至埠B之流 路而氣體被供給至氣體操作閥113之狀態。連接於大氣開 放口 127之埠C則關閉。第8圖爲機械閥121爲「關」， 爲關閉埠A而中斷對氣體操作閥113供給氣體之狀態。形 成有連接於大氣開放口 127之埠C打開而從埠B至埠C 之氣體流路 在機械閥121之埠A打開之狀態下，被傳送至氣體操 作閥113之第1控制用氣體，係與使閘閥7b之汽缸47動 作之動作用氣體相同，自氣體供給源3 00經配管1 15a、 1 1 5 C被供給。 汽缸123爲執行機械閥121之開關部121b之開/關之 切換的驅動部。該汽缸123藉由與閘閥7b之汽缸47動作 之動作用氣體相同，當作自氣體供給源3 00經配管115b 所供給之第2控制用氣體之第2控制用氣體而予以動作。 即是，當自氣體供給源300供給氣體時，汽缸123之活塞 桿123a前進，如第7圖所示般，機械閥121之開關部 121b成爲被推進之狀態，使埠A-B間連通。如此一來， 在供給來自氣體供給源3 00之氣體之狀態下，機械閥1 2 1 之開關部121b經常成爲開（on)，成爲在埠A-B間流入 氣體之狀態。 另外，當停止自氣體供給源300供給氣體時，或氣壓 下降時，則如第8圖所示般，汽缸123之活塞桿123a後 退，開關部121b藉由彈簧121a之推彈力被推回而成爲「 關」，使機械閥121之埠A-B間阻斷。 -24- 200945410 彈簧125係介於汽缸123和機械閥121之間，執行微 調整汽缸123之活塞桿123a推壓機械閥121之開關部 121b之時的推壓力。在被供給至汽缸123之氣體之壓力下 降之過程中，利用該彈簧125之推彈力高精度調節機械閥 121之開關部121b切換成關（OFF)之時序。在本實施型 態中，於例如自氣體供給源300被供給之第2控制用氣體 之壓力在0.35〜0.4MPa左右之範圍內之時，汽缸123之 活塞桿123a退避，被設置成機械閥121之開關部121b切 換成關（OFF )。如此一來，彈簧125係作用成在所求取 之壓力範圍執行機械閥1 2 1之切換。即是，彈簧1 25係當 作微調整成於第2控制用氣體之壓力在特定範圍內之時執 行機械閥121之開/關之切換（換言之氣體操作閥113之 開關切換）之閥切換時序調節手段而發揮功能者。 由第7圖所示之狀態，當被供給至汽缸123之氣體停 止或降低至特定壓力時，則如第8圖所示般，阻斷機械閥 121之埠A-B間。依此，開啓氣體操作閥1 13，外部氣體 (例如空氣）經真空洩漏用埠1 〇9、流路阻抗之大的氣體 導入配管111及連通孔107而逐漸流入至真空狀態之搬運 室3內。藉由導入來自連通孔107之外部氣體，真空狀態 之搬運室3內之壓力因漸漸接近於大氣壓，故從大氣壓開 放狀態之裝載鎖定室5側施加至閘閥7b之閥體41之壓力 逐漸緩和。搬運室3中之如此壓力控制藉由逆止閥103及 緩衝槽105，在確保汽缸47之動作用氣體之狀態下執行， 依此即使在例如因停電等而停止供給用以使閘閥7b動作 -25- 121 200945410 之動作用氣體之時，亦可以防止閘閥7b急速被開啓。 在本實施型態中，設置當作開關控制部之機械閥 和汽缸1 2 3和彈簧1 2 5，成爲控制氣體操作閥1 1 3之 的構成。因此，比起僅使用氣體操作閥113之第1實 態，則有可以藉由開關控制部高精度調整氣體操作閥 之開關時序。並且，於可藉由機械閥121和汽缸123 特定壓力範圍內調節開關氣體操作閥113之時序之時 可以省略彈簧125。 本實施型態中之其他構成、作用以及效果則與第 施型態相同。並且，在本實施型態中，亦可以使用自 供給源3 0 0所供給之與閘閥7b之動作用氣體不同系 氣體，以當作第1控制用氣體。 〔第3實施型態〕 接著，一面參照第9圖以及第1〇圖，針對本發 第3實施型態所涉及之壓力控制機構202a、202b予 明。第9圖及第1 0圖係表示本實施型態所涉及之壓 制機構202a、202b之構成。該壓力控制機構202a、 係與第1及第2實施形態之壓力控制機構200、201 ，爲可適用於真空處理系統100者。因此，在此以與 及第2實施型態不同點爲中心進行說明。第9圖至！ 圖中，針對與第1實施型態相同之構成賦予相同符號 略說明。 在第1實施形態之壓力控制機構200中，藉由氣 開關 施型 113 ，在 ，則 1實 氣體 統之 明之 以說 力控 202b 相同 第1 I 10 ，省 體操 200945410 作閥113被開關之氣體導入配管111之端部之真空洩 埠109成爲大氣開放狀態（參照第5圖）。對此，在 施型態之壓力控制機構202a中，則如第9圖所示般 真空洩漏用埠1 09連接於N2氣體供給源1 3 1。因此， 於停止自氣體供給源3 0 0供給汽缸47之動作用氣體 是產生壓力下降而開啓氣體操作閥113之時，來自1 體供給源131之N2氣體經真空洩漏用埠109、氣體導 管111及連通孔107而逐漸被導入至搬運室3之構成 N2氣體幾乎不含有水分，一般也當作真空腔室之 用氣體被利用。藉由將真空洩漏用埠109連接於N2 供給源1 3 1，於自氣體供給源3 00再次開始供給當作 動力之氣體之時，則必須重新執行搬運室3之沖洗處 ，比起自氣體操作閥113導入外部氣體之時較爲有利 且，並不限定於N2氣體，亦可使用例如Ar等之惰性 或乾氣體等。 再者，本實施型態之構成亦可以適用於第6圖〜 圖所示之第2實施型態之壓力控制機構201。第1 0圖 示與第2實施型態相同，在具備有當作開關控制部之 閥121和汽缸123和彈簧125之構成中，將真空洩漏 109連接於N2氣體供給源131之壓力控制機構202b 。此時也取得與上述相同之作用效果。 本實施型態中之其他構成、作用以及效果與第1 實施型態相同。 以上，雖然敘述本發明之實施型態，但是本發明 漏用 本實 ，將 成爲 ，或 Ϊ2氣 入配 Ο 沖洗 氣體 工場 理等 。並 氣體 第8 係表 機械 用埠 之例 及2 並不 -27- 200945410 限定於上述實施型態，當然可作各種之變形。例如，在上 述實施型態中，說明舉出將FPD用基板當作處理對象之基 板處理系統爲例予以說明，但是亦可以適用於以例如將半 導體晶圓當作對象之基板處理系統。 再者，在上述實施型態中，雖然以真空狀態之搬運室 和大氣壓開放狀態之裝載鎖定室爲例予以說明，但是本發 明之壓力控制機構若爲藉由氣體動作之閘閥抵抗兩個空間 之壓力差而密封開口部之構造，同樣可以適用。例如，即 使針對真空狀態之裝載鎖定室和外部之大氣環境之間的閘 閥7c(參照第1圖、第2圖），亦可以適用本發明之壓力 控制機構。 【圖式簡單說明】 第1圖爲槪略性表示真空處理系統之斜視圖。 第2圖爲第1圖之真空處理系統的俯視圖。 第3圖爲表示閘閥被開啓之狀態的剖面圖。 第4圖爲表示閘閥被封閉之狀態的剖面圖。 第5圖爲用以說明表示本發明之第1實施型態所涉及 之壓力控制機構之構成的圖面。 第6圖爲用以說明表示本發明之第2實施型態所涉及 之壓力控制機構之構成的圖面。 第7圖爲說明機械閥呈開之狀態的圖面。 第8圖爲說明機械閥呈關之狀態的圖面。 第9圖爲用以說明表示本發明之第3實施型態所涉及 -28- 200945410 之壓力控制機構之構成例的圖面。 第1 〇圖爲用以說明表示本發明之第3實施型態所涉 及之壓力控制機構之另外構成例的圖面。 【主要元件符號說明】 la、lb、lc:製程腔室 2 :承載器 3 :搬運室 5 :裝載鎖定室 7b :閘閥 47 :汽缸 1 0 0 :真空處理系統 1 0 1 :氣體供給配管 :逆止閥 1〇5 :緩衝槽 1 〇 7 :連通孔 109 :真空洩漏用埠 1 1 1 :氣體導入配管 1 1 3 :氣體操作閥 1 1 5 :控制用氣體配管 1 2 1 :機械閥 123 :汽缸 1 25 :彈簧 127 :大氣開放口 -29- 200945410 13 1 : N2氣體供給源 3 00 :氣體供給源 S :基板 -30-200945410 'The substrate S is taken from the cassette 11a for accommodating the unprocessed substrate, and the buffer 28 of the upper and lower stages of the substrate accommodating portion 27 of each of the load lock chambers 5 is closed after the forks 17a and 17b are retracted. Gate valve 7c. Thereafter, the inside of the load lock chamber 5 is exhausted, and the pressure is reduced to a specific degree of vacuum. Next, the gate valve 7b between the transfer chamber 3 and the loading bell is opened, and the substrate S of the substrate housing portion 27 of the lock chamber 5 is taken into consideration by the fork 25 of the transport device 23. Next, any one of the substrate S process chambers la, lb, and lc is transferred to the carrier by the fork 25 of the carrier device: 'The substrate S is etched in the process chambers la, lb, and lc. Wait for processing. Then, the processed substrate S is transferred from the carrier 2 to the fork 25 of the set 23, and the self-made process chambers la, lb, and lc are carried out. Then, the substrate S is routed through the chamber 5 in the opposite path to the above. It is housed in the cassette lib by the transport device 15. Further, the processed substrate S may be returned to the original cassette 11a. The picker's description of the structure and operation of the damper valve 7b between the accommodating chamber 3 and the load lock chamber 5 will be described with reference to Figs. 3 and 4. The gate valve 7b is provided on the substrate loading/unloading port 5b of the side wall 5a of the chamber 5 from the transfer chamber 3 side switch. Here, the gate valve is a vacuum apparatus according to a mode of carrying out a vacuum chamber in which the gate valve 7b is maintained in a vacuum state. The gate valve 7b is a substrate loading/unloading port 5b that is loaded and unloaded in a horizontal posture by a closed substrate S. The valve body 41 having a horizontally long length is formed, and the valve body 4 1 43a, 43b is supported, and the connecting rod 43a, 43b is connected to the valve body and placed in the mounting chamber 5, and is housed in the fixed chamber 5 [accommodated and moved into 2. Then, the specific i-loading device is locked even if i is being transported; the load-locking 7b and the link 41 in the way that the chamber 3 can be opened can be moved to the horizontal length of the movable block. Body 45. The links 43a, 43b are respectively hung between the left side of the movable block 45 and the left side of the valve body 41, and between the right side of the movable block 45 and the right side of the valve body 41 (and, In Figs. 3 and 4, only the left side links 43a, 43b) are shown. Further, the gate valve 7b is provided with a cylinder 47 for supplying a driving force for moving the movable block 45 up and down, and a guide rail 49 for guiding the movable block 45 to be vertically arranged. At the upper end portion of the guide rail 49, a stopper 51 that abuts against the upper surface of the movable block 45 to stop the movable block 45 is provided. Further, on the upper surface of the valve body 41, a rotating body (roller 5 5) for avoiding friction with the ceiling portion 53 is provided. The movable block 45 is coupled to the piston rod 47a of the cylinder 47, and is vertically displaced corresponding to the advance and retreat of the piston rod 47a. The movable block 45 is slid while being vertically aligned on the guide rail 49 and guided. That is, when the cylinder 47 is actuated and the piston rod 47a is moved up and down and retracted, the movable block 45 is moved up and down in the vertical direction under the guidance of the guide rail 49. Therefore, the valve body 41 connected to the piston rod 47a via the movable block 45 and the links 43a and 43b is also displaced up and down, and the sealing substrate is carried into the carry-out port 5b or the sealing substrate carrying-in port 5b is released. When the gate valve 7b is opened, as shown in Fig. 3, the valve body 41 is placed at a standby position lower than the substrate loading/unloading port 5b. The movable block 45 stands by at a lower standby position than the valve body 41. When the gate valve 7b is closed by the open state shown in Fig. 3, the cylinder 47 is actuated to advance (rise) the piston rod 47a with a specific stroke. So come. As shown in Fig. 4, the movable block 45 and the valve body 41 are vertically parallel to each other from the respective home positions, and the drum 55 of the valve body 41 abuts against the ceiling surface-16-200945410, and then the movable block 45 abuts Stopper 51. Then, the stalks and 43b are operated, and the valve body 41 is pressed toward the substrate loading/unloading port 5 to the periphery (side wall) of the substrate loading/unloading port 5b. The roller 55 in this operation is rotated in the horizontal direction on the ceiling surface 53, whereby the valve body 41 is moved horizontally. Since a sealing member (not shown) such as a ring is attached around the substrate loading/unloading port 5b, the valve body 41 can hold the sealing substrate loading/unloading port 5b. The gate valve 7b is set to an atmospheric pressure open state in the closed lock lock chamber 5, and the transfer chamber is set to a vacuum state. That is, the valve body 4 1 is prevented from being large from the vacuum side, and the sealing substrate is carried into the carry-out port 5b. When the gate valve 7b is opened in the closed state shown in Fig. 4, 47 is actuated to operate the cylinder 47 and the piston rod 47a is lowered only by the same stroke as the previous one. Accordingly, by the reverse of the operation of the sealing process, the movable block 45 and the valve body 41 are returned to the original standby position, and the substrate is loaded into the transfer port 5b. The cylinder 47 for driving the gate valve 7b is operated by an operating gas supplied from a gas supply source which is a part of the power of the entire plant of the vacuum processing system 100. The gas supply source not only distributes the gate valve to other devices in the vacuum processing system 100, but also externally. Therefore, when some conditions are, for example, a sudden increase in gas blackout required in the workshop, air compressor failure, etc., when the supply is stopped or reduced When the gas is used, there is a case where the gate valve 7b cannot be maintained in the closed state. When the valve body 41 and the movable block 45 that supply the operating gas of the driving cylinder 47 are stopped or reduced, the atmospheric pressure cannot be withstood, and when the valve body 41 is pressed from 43a, when the air is smoothly ventilated, the pneumatic cylinder preloading operation is canceled. Set the body for 7b - system. When the operation is performed, the substrate -17-200945410 is moved in and out of the port 5b, and the movable block 45 is lowered to open the substrate loading/unloading port 5b. Then, the air rapidly enters from the load lock chamber 5 at the atmospheric pressure to the transfer chamber 3 on the vacuum side. Such a rapid pressure fluctuation and an impact caused by the inflow of air are so severe that the substrate S or the transporting device 23 in the transfer chamber 3 can be broken. Fig. 5 is a view showing the configuration of a pressure control mechanism 200 in the vacuum processing system 1 of the present embodiment. In the vacuum processing system 100, when the operating gas from the gas supply source 300 is stopped or reduced, the pressure control mechanism 200 is provided to prevent the gate valve 7b from being rapidly turned on. The pressure control mechanism 200 will be described with reference to Fig. 5 . When the pressure control mechanism 200 stops or reduces the supply of the operating gas from the gas supply source 300, the gate valve 7b is maintained in a sealed state for a specific time, and the pressure rise in the transfer chamber 3 on the vacuum side is relaxed and the lock chamber is locked. The pressure difference within 5. The pressure control mechanism 200 includes a check valve 103 provided on the gas supply pipe 101 that supplies the operating gas from the gas supply source 300 to the cylinder 47 of the gate valve 7b, and is disposed in the check valve 103. The gas tank on the downstream side in the gas supply direction is supplied to the buffer tank 105 on the pipe 1 0 1 as a connection to the gate valve 7b. Further, the pressure control mechanism 200 is provided with a communication hole formed in the wall of the transfer chamber 3 (for example, the communication hole 107 of the bottom wall 3), and one end side is connected to the communication hole 107, and the other end side is formed with a vacuum leak port 109. The gas introduction pipe 111 of the narrow flow path and the gas operation valve 113 for opening and closing the first switching mechanism of the flow path generated by the gas introduction pipe 111 are attached to the transfer chamber 3 as -18-200945410. The control valve 丨1 is connected to the control gas pipe 1 1 5, and is controlled by the first control gas supplied to the control gas pipe 丨丨5 to control the gas operation valve 1 1 3 . The check valve 103 on the gas supply pipe 1 0 1 prevents the gas supply source 300 from being stopped due to a power failure or the like, and the gas is supplied from the opposite side to the positive pressure gate valve 7b when the supply of the operating gas is interrupted. The side is reversed to the side of the gas supply source that becomes the negative pressure, and the buffer tank 105 for storing a specific amount of gas is provided on the downstream side of the gas supply path by the check valve 103. In order to be at a specific time The amount of gas required to drive the cylinder 47 of the gate valve 7b is continued. In this manner, when the check valve 103 and the buffer tank 105 are energized to interrupt the supply of the operating gas from the gas supply source 300, the operating gas can be simultaneously operated. And the sealing state generated by the gate valve 7b is maintained as long as possible. Therefore, for example, when the supply of the operating gas from the gas supply source 300 is stopped for a short time, it is possible to use the check valve 1 〇 3 The backflow of the gas is prevented, and the shutoff valve 7b is maintained in a sealed state by using the operating gas stored in the buffer tank 1 〇 5. Next, the communication hole 1〇7 and the gas introduction pipe 1 1 1 provided in the transfer chamber 3 are provided. The operation of the gas operation valve 1 1 3 will be described. The communication hole 107 is a through hole formed in the bottom wall 3a of the transfer chamber 3, and the communication hole 107 may be formed in the side wall of the transfer chamber 3. The gas introduction pipe 111 is connected to the gas introduction pipe 111. The gas introduction pipe 111 has a narrow flow path 'to form a large flow path impedance. In the middle of the gas introduction pipe 111, a gas operation valve is provided -19-200945410 113 Further, a vacuum leaking port 109 for introducing an outside air is formed on the other end side of the gas introduction pipe 111. That is, the communication hole 107 is connected to the vacuum leak port 109 via the gas introduction pipe 111, and the gas introduction pipe 111 is provided. The generated flow path is configured to control the switch in accordance with the gas operation valve 113. The gas operation valve 1 1 3 is a normally open type valve that is operated by the first control gas supplied through the control gas pipe 1 15 The gas operation valve 1 1 3 is maintained in a closed state while the supply of the first control gas supplied through the control gas pipe 1 15 is performed at a specific pressure or higher. The control gas pipe 115 is a branch of the gas supply pipe 101 to which the operating gas for driving the cylinder 47 of the gate valve 7b is supplied. That is, it is a gas of the same system supplied from the gas supply source 300 which is the same as the first control gas and the above-mentioned operating gas. The control gas pipe 115 is on the flow side from the gas supply direction of the check valve 1〇3, and is branched from the gas supply pipe 1 〇1. As described above, the first control gas supplied by the control gas pipe 1 15 is the same as the gas for operating the gas of the cylinder 47 of the gate valve 7b. Therefore, during the supply of the operating gas. The first control gas is continuously supplied. However, when a state in which the operating gas from the gas supply source 300 is supplied is stopped or reduced due to, for example, a power failure, the supply of the first control gas is stopped or reduced. When the first control gas is equal to or lower than a specific pressure, for example, 0.1 MPa or less, the gas operating valve n3 is switched to the open state. When the gas operation valve 113 is opened, it is brought into the state of -20-200945410 from the vacuum shallow drain 淳1〇9 through the gas introduction pipe 111 and the communication hole 107 to be communicated to the inside of the transfer chamber 3. The gas introduction pipe 111 is set to have a large flow path impedance. When the volume of the transfer chamber 3 is set to 12 m3, and the internal pressure during vacuum is 1 Pa, when the gas operation valve 1 13 is opened, the inside of the transfer chamber 3 becomes atmospheric pressure for about 1.5 to 2 hours. In this way, when the gas supplied from the gas supply source 300 is stopped or reduced due to a power failure or the like, the gas operation valve 1 13 is turned on, and the external gas such as the atmosphere is leaked by the vacuum 109, The gas introduction pipe 111 and the communication hole gradually flow into the transfer chamber 3 in a vacuum state. Then, by introducing the outside air, the pressure in the transfer chamber 3 in the vacuum state is gradually approached to the atmospheric pressure, so that the pressure applied to the valve body 4 1 of the gate valve 7b from the load lock chamber 5 side of the atmospheric pressure is gradually relaxed. As described above, in the present embodiment, when the gas from the gas supply source 300 is interrupted, by the check valve 1〇3 and the buffer tank 105, it is possible to secure the closed state of the face gate valve 7b. Gas (i.e., the gas required to drive cylinder 47). In this state, the gas operation valve 113 connected to the transfer chamber 3 is opened, and the narrow gas introduction pipe 111 having a large flow path impedance is introduced, and the external air is gradually introduced into the transfer chamber 3 in a vacuum state, whereby the load lock chamber 5 can be alleviated. The pressure difference between the chamber and the transfer chamber 3 prevents the gate valve 7b from being rapidly turned on. Therefore, even when the operating gas for operating the gate valve 7b is stopped, it is possible to prevent an accident such as breakage of the substrate S or the conveying device 23 due to the rapid opening of the gate valve 7b. Further, the pressure control mechanism 2000 controls the gas operation valve 113 by using the first control gas-21 - 200945410 of the same system as the operating gas of the gate valve 7 b (the same gas supply source 300). An institution that needs electricity. Therefore, the pressure control mechanism 200 can function even when the supply of the operating gas is stopped due to a power failure or the like. This point is superior to an electric machine such as a pressure sensor or a pressure switch that is inoperable when the gas supply pipe 101 is installed to stop supplying electric power. Further, in Fig. 5, the buffer tank 105 is attached to the downstream side of the gas supply direction of the check valve 103 on the gas supply pipe 101. However, it is possible to ensure a sufficient amount of gas that can maintain the gate valve 7b in the closed state at a specific time by the gas supply pipe 10 1 between the check valve 103 and the cylinder 47, even if the buffer tank 105 is not provided. Also. [Second Embodiment] Next, a pressure control mechanism 20 1 according to a second embodiment of the present invention will be described with reference to Figs. 6 and 8. Fig. 6 is a view showing the configuration of a pressure control mechanism 201 according to this embodiment. The pressure control mechanism 20 1 is the same as the pressure control mechanism 200 of the first embodiment, and is applicable to the vacuum processing system 1 . Therefore, the description will be focused on differences from the first embodiment. In the sixth to eighth embodiments, the same configurations as those in the first embodiment are denoted by the same reference numerals and will not be described. The pressure control mechanism 201 includes a check valve 103 provided on the gas supply pipe 101 that supplies the operating gas from the gas supply source 300 to the cylinder 47 of the gate valve 7b, and is disposed closer to the check valve 103. The gas on the downstream side in the gas supply direction is supplied to the buffer tank 105 on the pipe 101 as a connection to the gate valve 7b. -22- 200945410 Further, the pressure control mechanism 20 1 is provided with a communication hole 107 provided in the bottom wall 3a of the transfer chamber 3, and has one end side connected to the communication hole 107, and the other end side is formed with a vacuum leak. A gas introduction pipe 111 for a narrow flow path of 埠09, a gas operation valve 113 as a first switching mechanism for switching the gas introduction pipe 111, and a second switch for flowing a switching gas into the gas operation valve 113 The mechanical valve 121 of the mechanism, and the cylinder 123 as the actuator that performs the switching of the mechanical valve 121, and the spring 1 2 5 of the pushing member existing between the mechanical valve 1 2 1 and the cylinder 1 2 3 are attached. It belongs to the transfer room 3. The mechanical valve 1 2 1 and the cylinder 1 2 3 and the spring 1 2 5 function as a switch control unit that controls the switch of the gas operating valve 1 13 . A control gas pipe 115 is connected to the gas operating valve 113, and the first control gas supplied through the control gas pipe 1 15 controls the switching of the gas operating valve 1 1 3 . In the present embodiment, the control gas pipe 115 is branched in the middle to supply the first control gas to the pipe 1 1 5 a of the mechanical valve 1 2 1 and the second control gas to the cylinder 1 23 Piping 1 15b. The configuration and operation of the check valve 103 and the buffer tank 105 are the same as those of the first embodiment, and thus the description thereof will be omitted. Further, the configuration and operation of the communication hole 107 and the gas operation valve 113 are also the same as those of the first embodiment. Fig. 7 and Fig. 8 show the configuration of the switch control unit in an enlarged manner. The mechanical valve 1 2 1 is a switch portion 121b having a spring 1 2 1 a, performing switching of ON/OFF by the spring force of the spring 1 2 1 a, and a 3-way valve having three turns A, B, and C.埠A is connected to the pipe 115a.璋B is connected to the gas operation valve 113 via the pipe 115c.埠C is connected to the open air port 127. -23- 200945410 Fig. 7 shows a state in which the mechanical valve 121 is "on", and the gas is supplied to the gas operating valve 113 via the flow path from 埠A to 埠B. Connected to the atmosphere opening 127 and then closed. Fig. 8 is a view showing that the mechanical valve 121 is "OFF", and the supply of gas to the gas operating valve 113 is interrupted in order to close the 埠A. When the gas flow path from the 埠B to the 埠C is opened and the gas flow path from the 开放B to the 埠C is opened, the first control gas is sent to the gas operation valve 113 in a state where the gas flow path from the 开放B to the 埠C is opened. The gas supply source 300 is supplied from the gas supply source 300 through the pipes 1 15a and 1 1 5 C in the same manner as the operating gas for operating the cylinder 47 of the gate valve 7b. The cylinder 123 is a drive unit that performs switching of the opening/closing of the switch portion 121b of the mechanical valve 121. The cylinder 123 is operated as the second control gas of the second control gas supplied from the gas supply source 300 through the pipe 115b by the same operation gas as the operation of the cylinder 47 of the gate valve 7b. In other words, when the gas is supplied from the gas supply source 300, the piston rod 123a of the cylinder 123 advances. As shown in Fig. 7, the switch portion 121b of the mechanical valve 121 is pushed forward, and the 埠A-B is communicated. As a result, in a state where the gas from the gas supply source 300 is supplied, the switch portion 121b of the mechanical valve 1 2 1 is always turned on, and the gas flows between the 埠A-B. When the gas supply from the gas supply source 300 is stopped or the air pressure is lowered, as shown in Fig. 8, the piston rod 123a of the cylinder 123 is retracted, and the switch portion 121b is pushed back by the elastic force of the spring 121a. "OFF", the mechanical valve 121 is blocked between the AB. -24- 200945410 The spring 125 is interposed between the cylinder 123 and the mechanical valve 121, and performs the pressing force when the piston rod 123a of the cylinder 123 is pressed against the switch portion 121b of the mechanical valve 121. In the process of lowering the pressure of the gas supplied to the cylinder 123, the timing of switching the switch portion 121b of the mechanical valve 121 to OFF is precisely adjusted by the spring force of the spring 125. In the present embodiment, for example, when the pressure of the second control gas supplied from the gas supply source 300 is in the range of about 0.35 to 0.4 MPa, the piston rod 123a of the cylinder 123 is retracted and is provided as the mechanical valve 121. The switch unit 121b is switched to OFF. In this way, the spring 125 acts to perform the switching of the mechanical valve 1 2 1 within the determined pressure range. That is, the spring 125 is used as a micro-adjustment to switch the on/off switching of the mechanical valve 121 (in other words, the switching of the gas operation valve 113) when the pressure of the second control gas is within a specific range. Those who use the means of adjustment to function. In the state shown in Fig. 7, when the gas supplied to the cylinder 123 is stopped or lowered to a specific pressure, as shown in Fig. 8, the gap between the axes A and B of the mechanical valve 121 is blocked. In this way, the gas-operated valve 13 is opened, and the external gas (for example, air) gradually flows into the transfer chamber 3 in a vacuum state by the vacuum leaking 埠1 〇9, the gas introduction pipe 111 having the large flow path impedance, and the communication hole 107. . By introducing the outside air from the communication hole 107, the pressure in the transfer chamber 3 in a vacuum state gradually approaches atmospheric pressure, so that the pressure applied to the valve body 41 of the gate valve 7b from the side of the load lock chamber 5 in the atmospheric pressure open state is gradually relaxed. The pressure control in the transfer chamber 3 is performed by the check valve 103 and the buffer tank 105 in a state in which the operating gas of the cylinder 47 is secured, whereby the supply of the gate valve 7b is stopped even if, for example, due to a power failure or the like - When the operating gas of 25-121 200945410 is used, it is also possible to prevent the gate valve 7b from being quickly turned on. In the present embodiment, a mechanical valve serving as a switch control portion, a cylinder 1 2 3 and a spring 1 2 5 are provided, and the gas operation valve 1 1 3 is controlled. Therefore, compared with the first embodiment in which only the gas operation valve 113 is used, the switching timing of the gas operation valve can be adjusted with high precision by the switch control unit. Further, the spring 125 can be omitted when the timing of the switching gas operating valve 113 can be adjusted within a specific pressure range of the mechanical valve 121 and the cylinder 123. Other configurations, operations, and effects of the present embodiment are the same as those of the first embodiment. Further, in the present embodiment, a gas different from the operating gas supplied from the supply source 300 to the gate valve 7b may be used as the first control gas. [Third embodiment] Next, the pressure control mechanisms 202a and 202b according to the third embodiment of the present invention will be described with reference to the ninth and first drawings. Fig. 9 and Fig. 10 show the configuration of the pressing mechanisms 202a and 202b according to the present embodiment. The pressure control mechanism 202a and the pressure control mechanisms 200 and 201 of the first and second embodiments are applicable to the vacuum processing system 100. Therefore, the description will be focused on differences from the second embodiment. Figure 9 to! In the drawings, the same components as those in the first embodiment are denoted by the same reference numerals. In the pressure control mechanism 200 of the first embodiment, by the gas switch type 113, the gas control unit 202b is the same as the first I 10 , and the provincial gymnastics 200945410 is the gas that the valve 113 is switched on. The vacuum vent 109 of the end portion of the introduction pipe 111 is in an open state (see Fig. 5). On the other hand, in the pressure control mechanism 202a of the embodiment, the vacuum leaking 埠1 09 is connected to the N2 gas supply source 133 as shown in Fig. 9. Therefore, when the operating gas supplied to the cylinder 47 from the gas supply source 300 is stopped to open the gas operating valve 113, the N2 gas from the one-body supply source 131 passes through the vacuum leaking port 109 and the gas conduit 111. The N2 gas which is gradually introduced into the transfer chamber 3 and the communication hole 3 is almost free of moisture, and is generally used as a gas for a vacuum chamber. By connecting the vacuum leak port 109 to the N2 supply source 1 3, when the supply of the gas as the power is resumed from the gas supply source 300, the flushing of the transfer chamber 3 must be re-executed, compared to the self-gas. It is advantageous when the operation valve 113 introduces an external air, and is not limited to the N 2 gas, and an inert or dry gas such as Ar may be used. Further, the configuration of this embodiment can be applied to the pressure control mechanism 201 of the second embodiment shown in Fig. 6 to Fig. 2 . In the same manner as in the second embodiment, the first embodiment shows a vacuum control 109 connected to the pressure control mechanism 202b of the N2 gas supply source 131 in the configuration including the valve 121 as the switch control unit, the cylinder 123, and the spring 125. . At this time, the same effects as described above are also obtained. Other configurations, operations, and effects of the present embodiment are the same as those of the first embodiment. Although the embodiment of the present invention has been described above, the present invention may be used as a ventilating gas, or the like. The gas is the eighth embodiment of the mechanical enthalpy and the second is not -27-200945410. The invention is limited to the above-described embodiment, and various modifications are of course possible. For example, in the above-described embodiment, a substrate processing system in which the substrate for FPD is treated is described as an example, but it can also be applied to a substrate processing system in which, for example, a semiconductor wafer is used. Further, in the above embodiment, the transfer chamber in the vacuum state and the load lock chamber in the open air state are taken as an example, but the pressure control mechanism of the present invention is resistant to the two spaces by the gate valve operated by the gas. The configuration in which the pressure difference is used to seal the opening portion is also applicable. For example, the pressure control mechanism of the present invention can be applied even to the gate valve 7c (see Figs. 1 and 2) between the load lock chamber in the vacuum state and the outside atmosphere environment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view schematically showing a vacuum processing system. Fig. 2 is a plan view of the vacuum processing system of Fig. 1. Fig. 3 is a cross-sectional view showing a state in which the gate valve is opened. Fig. 4 is a cross-sectional view showing a state in which the gate valve is closed. Fig. 5 is a view for explaining the configuration of a pressure control mechanism according to a first embodiment of the present invention. Fig. 6 is a view for explaining the configuration of a pressure control mechanism according to a second embodiment of the present invention. Fig. 7 is a view showing a state in which the mechanical valve is opened. Fig. 8 is a view showing the state in which the mechanical valve is closed. Fig. 9 is a view for explaining a configuration example of a pressure control mechanism of -28-200945410 showing a third embodiment of the present invention. The first drawing is a view for explaining another configuration example of the pressure control mechanism according to the third embodiment of the present invention. [Description of main component symbols] la, lb, lc: process chamber 2: carrier 3: transfer chamber 5: load lock chamber 7b: gate valve 47: cylinder 1 0 0: vacuum processing system 1 0 1 : gas supply piping: reverse Stop valve 1〇5: Buffer tank 1 〇7: Communication hole 109: Vacuum leak 埠1 1 1 : Gas introduction pipe 1 1 3 : Gas operation valve 1 1 5 : Control gas pipe 1 2 1 : Mechanical valve 123 : Cylinder 1 25 : Spring 127 : Atmospheric open port -29- 200945410 13 1 : N2 gas supply source 3 00 : Gas supply source S : Substrate -30-

Claims (1)

200945410 十、申請專利範圍 1. 一種真空裝置，具備藉由自氣體供給源所供給之 動作用氣體而動作之閘閥，和藉由上述閘閥被維持真空狀 態之真空室，其特徵爲：具備 爲了將外部氣體導入至上述真空室內，被貫通形成於 該真空室之壁的連通孔；和 —端側被連接於上述連通孔，另一端形成有真空拽漏 用埠之配管；和 被配置在上述配管，藉由第1控制用氣體進行開關， 切換導入來自上述真空洩漏用埠之外部氣體的第1開關機 構， 上述第1開關機構係當上述第1控制用氣體之供給壓 力成爲特定壓力以下時則被開啓，使外部氣體從上述真空 洩漏用埠導入至上述真空室。 2 ·如申請專利範圍第1項所記載之真空裝置，其中 > 上述真空裝置係在從上述氣體供給源至上述閘閥之上 述動作用氣體之供給路徑之途中，又具備有逆止閥。 3 ·如申請專利範圍第2項所記載之真空裝置，其中 > 上述第1控制用氣體係藉由在較上述逆止閥接近上述 氣體供給源之位置，自上述動作用氣體之供給路徑分歧之 供給路徑被供給的與上述動作用氣體相同系統之氣體。 4.如申請專利範圍第2或3項所記載之真空裝置， -31 - 200945410 其中， 上述真空裝置係在上述動作用氣體之供給路徑中較上 述逆止閥接近於上述閘閥之位置，又具備事先貯留上述動 作用氣體之緩衝槽。 5 ·如申請專利範圍第1至4項中之任一項所記載之 真空裝置，其中， 上述真空裝置又具備控制上述第1開關機構之開關的 開關控制部， 上述開關控制部具備有切換對上述第1開關機構供給 或阻斷上述第1控制用氣體的第2開關機構，和 以與上述動作用氣體相同系統之第2控制用氣體動作 而執行上述第2開關機構之切換的致動器， 上述致動器係當上述第2控制用氣體之供給壓力成爲 特定壓力以下時，切換上述第2開關機構，阻斷對上述第 1開關機構供給上述第1控制用氣體。 6. 如申請專利範圍第5項所記載之真空裝置，其中 上述開關控制部又具備有介於上述致動器和上述第2 開關機構之間’藉由推彈力調節上述第2開關機構之切換 時序的推彈構件。 7. 如申請專利範圍第1至6項中之任一項所記載之 真空裝置，其中， 上述真空洩漏用埠連接有惰性氣體供給源。 8. 一種真空處理系統，在真空狀態下對被處理體執 -32- 200945410 行特定處理，其特徵爲： 具備有申請專利範圍第1至7項中之任—項所記載之 真空裝置。 9.如申請專利範圍第8項所記載之真空處理系統， 其中， 上述真空室爲將被處理體搬運至用以對處理體執行特 定處理之真空處理室的真空搬運室。 ❹ 10·如申請專利範圍第8項所記載之真空處理系統， 其中， 上述真空室係爲了將被處理體搬入搬出至真空處理系 統內而構成能夠切換大氣壓開啓狀態和真空狀態之真空預 備室。 1 1 .如申請專利範圍第8至1 〇項中之任一項所記載 之真空處理系統，其中， 係對被處理體執行電漿處理的電漿處理系統。 φ 1 2·—種真空室之壓力控制方法，在具備有藉由自氣 體供給源所供給之動作用氣體而動作之閘閥，和藉由上述 閘閥被維持真空狀態之真空室的真空裝置中，控制上述真 空室之壓力，其特徵爲： 上述真空裝置具備有：用以將外部氣體導入至上述真 空室之連通孔；和 一端側被連接於上述連通孔，另一端形成有真空洩漏 用埠之配管；和 被配置在上述配管，藉由第1控制用氣體進行開關， -33- 200945410 切換導入來自上述真空洩漏用埠之外部氣體的第1開關機 構；和 被設置在從上述氣體供給源至上述閘閥之上述動作用 氣體之供給路徑之途中的逆止閥， 在使上述真空室成爲真空之狀態下，自上述氣體供給 源被供給之動作用氣體之壓力下降之時，一邊藉由上述逆 止閥防止上述動作用氣體之逆流，一邊開啓上述第1開關 機構而自上述真空洩漏用埠將外部氣體導入至上述真空室 ’並使上述真空室之壓力接近於大氣壓。 1 3 ·如申請專利範圍第〗2項所記載之壓力控制方法 ,其中， 在上述動作用氣體之供給路徑中較上述逆止閥接近於 上述閘閥之位置，又具備事先貯留上述動作用氣體之緩衝 槽’以確保上述動作用氣體。 14.如申請專利範圍第12或13項所記載之真空室之 壓力控制方法，其中， 上述第1控制用氣體係藉由在較上述逆止閥接近上述 氣體供給源之位置，自上述動作用氣體之供給路徑分歧之 供給路徑被供給的與上述動作用氣體相同系統之氣體，當 上述第1控制用氣體之供給壓力成爲特定壓力以下時，開 啓上述第1開關機構，將外部氣體自上述真空洩漏用埠導 入至上述真空室。 1 5 .如申請專利範圍第1 2至1 4項中之任一項所記載 之真空室之壓力控制方法，其中， -34- 200945410 上述真空裝置又具備控制上述第1開關機構之開關的 開關控制部， 上述開關控制部具備有切換對上述第1開關機構供給 或阻斷上述第1控制用氣體的第2開關機構，和 以與上述動作用氣體相同系統之第2控制用氣體動作 而執行上述第2開關機構之切換的致動器， 當上述第2控制用氣體之供給壓力成爲特定壓力以下 φ 時’上述致動器切換上述第2開關機構，阻斷對上述第1 開關機構供給上述第1控制用氣體，開啓上述第1開關機 構而自上述真空洩漏用埠導入外部氣體至上述真空室。 1 6.如申請專利範圍第1 5項所記載之真空室之壓力 控制方法，其中， 使推彈構件介於上述致動器和上述第2開關機構之_ ’藉由該推彈構件調節上述第2開關機構之切換時序。 1 7 ·如申請專利範圍第1 2至1 6項中之任一項所記載 φ 之真空室之壓力控制方法，其中， 自上述真空洩漏用埠所導入之外部氣體爲惰性氣體。 -35-200945410 X. Patent Application No. 1. A vacuum device comprising a gate valve operated by an operating gas supplied from a gas supply source, and a vacuum chamber maintained in a vacuum state by the gate valve, characterized in that it is provided for The outside air is introduced into the vacuum chamber, and is penetrated through a communication hole formed in a wall of the vacuum chamber; and the end side is connected to the communication hole, and the other end is formed with a piping for vacuum leaking; and the pipe is disposed at the pipe When the first control gas is switched, the first switching mechanism for introducing the external air from the vacuum leaking port is switched, and the first switching mechanism is when the supply pressure of the first control gas is equal to or lower than a specific pressure. It is turned on, and external air is introduced into the vacuum chamber from the vacuum leaking crucible. (2) The vacuum device according to the first aspect of the invention, wherein the vacuum device further includes a check valve in the middle of the supply path of the operating gas from the gas supply source to the gate valve. 3. The vacuum device according to the second aspect of the invention, wherein the first control gas system is different from the supply path of the operating gas by a position closer to the gas supply source than the check valve The supply path is supplied with the same system as the above-described operating gas. 4. The vacuum device according to the second or third aspect of the invention, wherein the vacuum device is provided in the supply path of the operating gas, and the check valve is closer to the gate valve than the check valve. The buffer tank for the above-mentioned operating gas is stored in advance. The vacuum device according to any one of claims 1 to 4, wherein the vacuum device further includes a switch control unit that controls a switch of the first switch mechanism, and the switch control unit includes a switch pair The second switching mechanism that supplies or blocks the first control gas by the first switching mechanism and the actuator that performs switching of the second switching mechanism by operating the second control gas in the same system as the operating gas When the supply pressure of the second control gas is equal to or lower than a specific pressure, the actuator switches the second switching mechanism to block the supply of the first control gas to the first switching mechanism. 6. The vacuum device according to claim 5, wherein the switch control unit is further provided between the actuator and the second switch mechanism to adjust the switching of the second switch mechanism by a pushing force Timing push members. 7. The vacuum device according to any one of claims 1 to 6, wherein the vacuum leaking port is connected to an inert gas supply source. A vacuum processing system which performs a specific treatment on a to-be-processed object in a vacuum state, and is characterized in that it has a vacuum device as described in any one of claims 1 to 7. 9. The vacuum processing system according to claim 8, wherein the vacuum chamber is a vacuum transfer chamber that transports a workpiece to a vacuum processing chamber for performing a specific treatment on the processing body. The vacuum processing system according to the eighth aspect of the invention, wherein the vacuum chamber is configured to be capable of switching between an atmospheric pressure open state and a vacuum state in order to carry the workpiece to be carried in and out of the vacuum processing system. The vacuum processing system according to any one of claims 8 to 1, wherein the plasma processing system for performing plasma treatment on the object to be processed is used. Φ 1 2 - a pressure control method for a vacuum chamber, in a vacuum device including a gate valve that is operated by an operating gas supplied from a gas supply source, and a vacuum chamber that is maintained in a vacuum state by the gate valve Controlling the pressure of the vacuum chamber, wherein the vacuum device includes: a communication hole for introducing external air into the vacuum chamber; and one end side connected to the communication hole, and the other end of which is formed with a vacuum leak a piping; and a first switching mechanism that switches between the first control gas and the first control gas, -33-200945410 to introduce and introduce the external air from the vacuum leaking crucible; and is provided from the gas supply source When the pressure of the operating gas supplied from the gas supply source is lowered, the check valve in the middle of the supply path of the operating gas of the gate valve is lowered by the above-mentioned inverse The check valve prevents the flow of the above-mentioned operating gas from flowing back, and opens the first switching mechanism from the vacuum leaking Gas introduced into the vacuum chamber 'and the pressure of the vacuum chamber is close to atmospheric pressure. The pressure control method according to the second aspect of the invention, wherein the operation gas supply path has a position in which the check valve is close to the gate valve, and the operating gas is stored in advance. The buffer tank 'to ensure the above-mentioned operating gas. The pressure control method of a vacuum chamber according to claim 12, wherein the first control gas system is operated from the operation at a position closer to the gas supply source than the check valve. When the supply pressure of the first control gas is equal to or lower than a specific pressure, the first switching mechanism is turned on, and the external gas is supplied from the vacuum when the supply pressure of the first control gas is equal to or lower than a specific pressure. The leak is introduced into the vacuum chamber. The vacuum chamber pressure control method according to any one of claims 1 to 4, wherein the vacuum device further includes a switch for controlling a switch of the first switching mechanism. In the control unit, the switch control unit includes a second switching mechanism that switches the supply or the blocking of the first control gas to the first switching mechanism, and performs the second control gas operation in the same system as the operating gas. When the supply pressure of the second control gas is equal to or less than a specific pressure φ, the actuator switches the second switching mechanism to block the supply of the first switching mechanism to the first switching mechanism. The first control gas is turned on by the first switching mechanism, and the external air is introduced into the vacuum chamber from the vacuum leaking crucible. 1. The pressure control method of a vacuum chamber according to claim 15, wherein the pusher member is interposed between the actuator and the second switch mechanism by the push member to adjust the above Switching timing of the second switching mechanism. The pressure control method of the vacuum chamber of φ according to any one of the first to second aspects of the invention, wherein the external gas introduced from the vacuum leaking crucible is an inert gas. -35-
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