200941152 九、發明說明： 【發明所屬之技術領域】 本發明係關於在基板描繪圖案之技術’特別係關於縮短 在基板曝露處理能量射束之時間之技術。 【先前技術】 以往，通常藉由對形成在半導體基板及印刷基板、以及 電漿顯示裝置、液晶顯示裝置、光罩用之玻璃基板等之感 光材料（例如光阻）之層照射光，以施行圖案之描繪。 ® 例如在專利文獻1中，揭示一種包含一面以水平姿勢保 持作為描繪材料之基板，一面移動之台架、及將光束照射 於基板之上面之照射單元之圖案描繪裝置β在此種圖案描 繪裝置中’一面檢測基板位置，一面由配置於特定位置之 照射單元將光出射’藉以將特定之圖案描繪在基板之主 面。在此種直接掃描型之圖案描繪裝置中，由於不使用大 型光罩’故可彈性地對應圖案之間距及寬度之變更。 φ [專利文獻i]日本特開2005-221 596號公報 【發明内容】 [發明所欲解決之問題] 而作為-作感光材料使用之光阻，有負型與正型，在 . 負型之情形，會在其後之顯影處理中，留下曝光部分。另 方面’在正型之情形，在顯影處S中，曝·光部分會被除 王使用負型之情形，顯影液使用較多有機溶劑，故在處 理及％境方面較有問題，或因顯影時光阻會溶脹，故難以 形成微細布線。基於此等理由，在光微影步驟中，一般常 136984.doc 200941152 使用正型光阻。 圖11係表示形成有正型之光阻層之基板ι90之主面（上）與 側面（下）之圖。中央部分之光阻層RG係描繪有圖案之區 域，又’基於防止基板190搬動時產生灰塵等之理由，外 緣部分之光阻層RG需在其後之顯影步驟中被除去。 在此，如圖11所示，形成於基板之光阻層R(J多半會因 塗佈液之表面張力，而使外緣部分之厚度匕2變得大於基板 190之中央部分之厚度L1 (例如L2為L1之2倍以上）。因此， 為了除去此外緣部分之光阻層RG，有必要施行強度大於 ’、、、射於中央σρ分之光之光之照射，或施行更長時間之曝 光0 因此，在以往之光微影步驟中，需要藉由上述圖案描繪 裝置在中央部分描繪面板用之圖案後，藉由將光束等照射 於周緣部分用之曝光裝置進一步施行曝光，故曝光處理及 參 搬送相當花費時間。但，在上述基板製造之領域中，「縮 短處理基板之時間」已成至上命題，對於曝光處理之時 間’也被要求必須縮短時間。 用二m述問題而發明者…的在於提供可利 .之描繪處理，在基板全面中施行充分之能量 射束之可變照射處理之技術。 威量 [解決問題之技術手段] 為解決上述問顏，*喜, 固电 題凊求項1之發明之特徵在於：JL係蔣 Γ:::Γ具有感材層之基板之圖案描緣裝置:、且包 其保持基板；照射構件，其對保持於前述 136984.doc 200941152 保持構:彳丰^ I > 束. 您基板，照射可改變照射強度之描繪用之能量射 移動構件，其使前述保持構件對前述照射構件相對地 昭L塞及控制構件，其將多值型式之控制信號供應至前述 件，藉此對前述能量射束之照射強度進行多階段控 制。 二 又’睛求項2之發明之特徵在於：其係請求項1之發明之 5案描繪裝置，且前述控制構件係依據與基板之主面區域 、之描繪有圖案之圖案區域與前述圖案區域外之周邊區域 分別對應並包含前述能量射束之照射位置資訊之圖案區域 照射資料與周邊區域照射資料，施行前述照射構件之昭射 控制者》 ‘' 月求項3之發明之特徵在於：其係請求項2之發明之 圖案m置，且包含：資料合成構件，其係、就照射強 度以多值型式合成前述圖案區域照射資料與前述周邊區 Φ 域…射貝料’别述控制構件係依據前述資料合成構件所合 成之合成資料之各照射位置之照射強度資訊，一面使照射 強度變化’一面施行前述照射構件之照射控制。 又’請求項4之發明之特徵在於：其係請求項2或3之發 月之圖案描綠裝置，且前述基板係具有正型感材層；前述 ㈣㈣係控制前述照射構件’俾以照射強度大於前述圖 案區域之能量射束照射前述周邊區域中沿著基板端緣之特 定寬度之周緣區域者。 又’請求項5之發明之特徵在於：其係請求項⑴中任 -項之發明之圓案描繚裝置，且在前述周邊區域照射資料 136984.doc 200941152 中’包含有關基板之識別資訊之識別區域照射資料。 又，請求項ό之發明之特徵在於：其係請求項2至5中任 一項之發明之圖案描繪裝置，且在前述圖案區域照射資料 及前述周邊區域圖案資料中，未包含不施行前述能量射束 之照射之部分之位置資訊。 又，請求項7之發明之特徵在於：其係請求項丨至6中任 一項之發明之圖案描繪裝置，且前述能量射束係光束。 又，請求項8之發明之特徵在於：其係使主面具有感材 層之基板對照射可改變照射強度之描繪用之能量射束之照 射構件相對地移動而將圖案描繪於基板之圖案描繪方法， 且包含：（a)步驟，取得以多值型式具有照射強度資訊之照 射資料，該照射強度資訊係對應於前述照射構件之前述能 量射束之各照射位置者；及（b)步驟，依據前述（a)步驟所 取得之照射資料之各照射位置之照射強度資訊，一面使照 射強度變化’-面向前述基板由前述照射構件照射前述能 量射束* [發明之效果] 依據請求項1至8之發明，可依照感材層之厚度切換能量 射束之照射強度。藉此，可利用時間上連績之描繪處理在 基板全面中施行充分之能量射束之照射處理，故可縮短能 量射束之曝露處理所需之時間。 又，依據請求項2之發明，可對構成基板之主面區域之 圖案區域與周緣區域，依照各區域之感材層之厚度，一面 控制照射強度，-面施行能量射束之照射，故無必要使用 136984.doc -9- 200941152 各區域專用之照射裝置，可縮短能量射束之曝露處理所需 之時間。 叮4 又，依據請求項3之發明，可藉由使用合成之照射資 料，縮短資料處理所需之時間。 . 又，依據請求項4之發明，可利用照射強度大於圖案區 域之能量射束照射於一般感材層變厚之周緣區域，而可更 確實地使周緣區域之感材層變性。 φ & ’依據請求項5之發明’由於在周邊區域照射資料 中，包含識別區域照射資料，在圖案描繪之同時，也可呓 錄有關基板之識別資訊，故可縮短基板製造所需之時間。 又，依據請求項6之發明，由於可減少所處理之資料 量’故可縮短資料處理時間。 【實施方式】 以下’-面參照附圖，一面詳細制有關本發明之合適 之實施型態。 ❷ <1.第1實施型態〉 <1.1.構成及功能〉 圖！係表示本發明之第丨實施型態之圖案描繪裝置丨之立 ’ 體圖。又’圖2係表示圖案描繪裝置1之仰視圖。 .又，在圖1中，在圖示及說明之方便上，定義為：z軸方 向表示垂直方向’XY平面表示水平面，但該等係為掌握 關係位置所作之權宜上之定義，而非用於限定以下說明之 各方向。在以下之各圖中亦同。又，右阁 在圖2中，在說明之 方便上，以二點鏈線表示照明光學系3。 136984.doc •10- 200941152 圖案描繪裝置1係在製造液晶顯示裝置用之基板之步驟 中，在玻璃基板（以下’僅稱為「基板」）9〇之上面描繪圖 案用之裝置。係在具有感光材料（在本實施型態中，為光 阻）之層（感材層）之玻璃基板（以下，僅稱為「基板」， 描繪特定之圖案用之裝置。如圖1及圖2所示，圖案描緣裝 置1主要係具備有架台11、移動板群2、照明光學系3、雷 • 射測長器41、及控制部8。 [架台11] 架台11具有略直方體狀之外形，在其上面之略水平之區 域’具備有架橋構造體12及移動板群2。架橋構造體12係 以略水平地架在移動板群2之上方之方式固定於架台n 上。如圖1所不，架台11具有一體地支持移動板群2與架橋 構造體12之功能。 [移動板群2] 移動板群2主要係由保持基板9〇之基板保持板21、由下 〇 方支持基板保持板21之支持板22、由下方支持支持板22之 基座板23、由下方支持基座板23之基台24、使基板保持板 21在乙軸周圍轉動之轉動機構211、使支持板22向X軸方向 (副掃描方向）移動用之副掃描機構221、及使基座板23向丫 - 軸方向（主掃描方向）移動用之主掃描機構231所構成。 基板保持板21係在其上面設有格子狀之吸附溝，唯此省 略圖不，在此等吸附溝之内底部分散地設有複數吸附孔。 此等吸附孔被連接於真空泵等，藉由使該真空泵執行動 作，可將吸附溝内之環境氣體排氣。藉此，可將基板90吸 136984.doc 200941152 附保持於基板保持板21之上面。因此，基板保持板21具有 保持基板9 0之功能。 轉動機構211具有安裝於基板保持板21之（_γ)側端部之 動子、與設於支持板22之上面之定子所構成之線性馬達 211a。又，轉動機構211係在基板保持板21之中央部下面 側與支持板22之間具有轉動轴211 b。藉由使線性馬達211 a 執行動作，使動子沿著定子向X轴方向移動，並使基板保 ❹ 持板21以支持板22上之轉動軸211b為中心在特定角度之範 圍内轉動。 副掃描機構221具有安裝於支持板22之下面之動子、與 設於基座板23之上面之定子所構成之線性馬達221a。又， 副掃描機構221係在支持板22與基座板23之間，具有向副 掃描方向延伸之一對導部221 b。藉由使線性馬達221 a執行 動作，使支持板22沿著基座板23上之導部221 b向副掃描方 向移動。 ❹ 主掃描機構231具有安裝於基座板23之下面之動子、與 設於基台24上之定子所構成之線性馬達23 1 a。又，主掃描 機構23 1係在基座板23與架台11之間，具有向主掃描方向 ' 延伸之一對導部23 1 b。藉由使線性馬達23 1 a執行動作，使 - 基座板23沿著基台24上之導部231b向主掃描方向移動。因 此’在基板90保持於基板保持板21之狀態下，藉由使主掃 描機構231執行動作，可使基板90沿著主掃描方向（γ方向） 移動。又’此等移動機構係被後述之控制部8具備之移動 機構控制部8 11控制其動作。 136984.doc -12· 200941152 [照明光學系3] 照明光學系3主要係具備有雷射振盪器3 1、分束器32、 及照射單元3 3。照明光學系3係在架台11上，被設置於跨 過移動板群2所設之架橋構造體12之上部。 雷射振盈器31係依據控制部8所送出之特定之驅動信號 出射雷射光之光源裝置。由雷射振盪器31出射之雷射光係 經由未圖示之特定光學系而被引導至分束器被引導至 參 分束器32之雷射光係被設在分束器32之内部之複數半反射 鏡（未圖示）分割成光量相等之複數條（在本實施型態中，為 6條）光線。又’被分割之複數條雷射光係被出射成為沿著 分束器32之（-Y)側之面等間隔排列之互相平行之光線。 複數個（在本實施型態中，為6個）照射單元33係使由分 束器32出射之複數光線分別照射於基板9〇之上面用之光學 單元。各照射單元33係以分別對應於複數條光線之方式沿 著副掃描方向等間隔地設置於架橋構造體丨2之側面上部。 ❿ 由分束器32出射之複數光線係經由設在各照射單元33之内 部之特定光學系而照射於保持於基板保持板2丨之基板9〇之 上面。藉此’可在形成於基板90之上面之感光材料上，沿 著副掃描方向等間隔地形成特定圖案。 -更詳細言之’使基座板23向主掃描方向移動而一面使基 板90向主掃描方向移動面由照射單元33出射光束時， 在基板90之上面’會描繪出向主掃描方向斷續地被曝光之 特定寬度（例如50 nm寬度）之複數條圖案群。圖案描繪裝 置1係在完成1次之向主掃描方向之描繪時，使基板保持板 136984.doc 200941152 21向副掃描方向移動僅照射單元33之照射寬度份，並使基 板保持板U)再度-面向主掃財向移動，—面由照射單元 33斷續地出射光束。如此1案描緣裝以係-面使基板 9〇向副掃描方向偏移僅照射單元33之照射寬度份，一面重 複特定次數向主掃描方向之圖案掃描，藉以在基板9〇之全 面中描繪特疋之液晶圖案（彩色遽光片及tft陣列等應形成 在玻璃基板上之圖案）。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for drawing a pattern on a substrate, in particular, a technique for shortening the time of processing an energy beam at a substrate exposure. [Prior Art] Conventionally, light is applied to a layer of a photosensitive material (for example, a photoresist) formed on a semiconductor substrate and a printed circuit board, and a plasma display device, a liquid crystal display device, or a glass substrate for a photomask. The depiction of the pattern. For example, Patent Document 1 discloses a pattern drawing device including a gantry that moves a substrate as a drawing material in a horizontal posture, and an irradiation unit that irradiates a light beam on the upper surface of the substrate. In the middle, the position of the substrate is detected, and the light is emitted by the irradiation unit disposed at a specific position, so that a specific pattern is drawn on the main surface of the substrate. In such a direct scanning type pattern drawing device, since the large mask is not used, the change in the distance between the patterns and the width can be flexibly corresponded. φ [Patent Document i] Japanese Laid-Open Patent Publication No. 2005-221 596 [Summary of the Invention] [Problems to be Solved by the Invention] As a photosensitive material used as a photosensitive material, there are negative and positive types, in the negative type. In the case, the exposed portion is left in the subsequent development process. On the other hand, in the case of a positive type, in the developing portion S, the exposed portion of the light is removed by the king, and the developer uses more organic solvent, so there is a problem in handling and % environment, or When the photoresist is swollen during development, it is difficult to form fine wiring. For these reasons, in the photolithography step, a positive photoresist is generally used 136,984.doc 200941152. Fig. 11 is a view showing a principal surface (upper) and a side surface (bottom) of a substrate ι90 on which a positive photoresist layer is formed. The photoresist layer RG in the central portion is patterned with a pattern, and the photoresist layer RG at the outer edge portion is removed in the subsequent development step based on the reason that dust or the like is generated when the substrate 190 is prevented from being moved. Here, as shown in FIG. 11, the photoresist layer R formed on the substrate (mostly, the thickness 匕2 of the outer edge portion becomes larger than the thickness L1 of the central portion of the substrate 190 due to the surface tension of the coating liquid ( For example, L2 is twice or more of L1. Therefore, in order to remove the photoresist layer RG of the other edge portion, it is necessary to perform irradiation of light having a intensity greater than ',, or light emitted from the center σρ, or for a longer period of time. Exposure 0 Therefore, in the conventional photolithography step, it is necessary to further perform exposure by exposing a pattern such as a panel to the peripheral portion by irradiating a light beam or the like to the peripheral portion by the pattern drawing device. It takes a lot of time to carry out the transfer. However, in the field of substrate manufacturing, "shortening the time for processing the substrate" has become a proposition, and it is required to shorten the time for the exposure processing. The inventor has described the problem with two m. The technology of providing a variable processing of a sufficient energy beam in the entire substrate is provided by the drawing process of the profitable image. Q Yan, *喜, The invention of the solid-state title 凊1 is characterized by: JL Department Jiang Yan::: 图案 pattern drawing device with a substrate of a sensible layer: and a substrate for holding the substrate; an illuminating member, For the above-mentioned 136,984.doc 200941152 holding structure: 彳丰^ I > beam. Your substrate, irradiation can change the intensity of the irradiation of the energy-moving member for painting, which causes the aforementioned holding member to relatively illuminate the aforementioned illuminating member And a control member that supplies a control signal of the multi-value type to the aforementioned member, thereby performing multi-stage control on the illumination intensity of the energy beam. The invention of the second item is characterized by: claim 1 According to a fifth aspect of the invention, the control device includes a pattern corresponding to a main surface area of the substrate, a pattern area in which the pattern is drawn, and a peripheral area outside the pattern area, and includes a pattern of the irradiation position information of the energy beam. The invention is characterized in that the invention is the pattern m of the invention of claim 2, which is characterized by the illumination of the area and the illumination of the surrounding area, and the invention of the invention of the invention. The method includes: a data synthesizing member, wherein the irradiation intensity is synthesized in a multi-valued manner, and the illumination data of the pattern region and the peripheral region Φ region are formed. The shot control material is a synthetic material synthesized according to the data synthesis component. In the irradiation intensity information of the irradiation position, the irradiation control of the irradiation member is performed while changing the irradiation intensity. The invention of claim 4 is characterized in that it is a pattern greening device of the month of request 2 or 3, and The substrate has a positive-type sensing layer; the fourth (4)-(4) controls the irradiation member 俾 to irradiate a peripheral region of a specific width along the edge of the substrate in the peripheral region with an energy beam having an irradiation intensity greater than the pattern region. The invention of claim 5 is characterized in that it is a description device of the invention of any one of the claims (1), and in the peripheral area illumination data 136984.doc 200941152, the identification area containing the identification information about the substrate is irradiated. data. Further, the invention of claim 1 is characterized in that the pattern drawing device of the invention of any one of claims 2 to 5, wherein the pattern region illumination material and the peripheral region pattern data do not include the aforementioned energy Location information of the portion of the beam that is illuminated. Further, the invention of claim 7 is characterized in that it is a pattern drawing device of the invention of any one of the items of the invention, wherein the energy beam is a light beam. Further, the invention of claim 8 is characterized in that the substrate having the sensing layer on the main surface is relatively moved to irradiate the irradiation member for irradiating the energy beam for changing the irradiation intensity, and the pattern is drawn on the substrate. The method includes the steps of: (a) obtaining illumination data having illumination intensity information in a multi-valued pattern, wherein the illumination intensity information corresponds to each of the illumination positions of the energy beam of the illumination member; and (b), According to the irradiation intensity information of each irradiation position of the irradiation data obtained in the above step (a), the irradiation intensity is changed - the surface of the substrate is irradiated with the energy beam by the irradiation member * [Effect of the invention] According to the request 1 to According to the invention of 8, the irradiation intensity of the energy beam can be switched in accordance with the thickness of the material layer. Thereby, it is possible to perform sufficient irradiation of the energy beam on the entire substrate by the drawing process of the time series, so that the time required for the exposure process of the energy beam can be shortened. Further, according to the invention of claim 2, the pattern region and the peripheral region constituting the main surface region of the substrate can be controlled in accordance with the thickness of the perceptual layer of each region, and the irradiation of the energy beam can be performed on the surface, so that It is necessary to use 136984.doc -9- 200941152 special illumination devices for each area to shorten the time required for the exposure of the energy beam.叮4 Further, according to the invention of claim 3, the time required for data processing can be shortened by using synthetic irradiation materials. Further, according to the invention of claim 4, the energy beam having an irradiation intensity larger than the pattern region can be irradiated to the peripheral region where the general feeling layer is thickened, and the sensor layer in the peripheral region can be more reliably denatured. φ & 'Invention according to claim 5' Because the illumination data in the surrounding area includes the illumination data of the identification area, the identification information of the substrate can be recorded at the same time as the pattern is drawn, so that the time required for the substrate manufacturing can be shortened. . Further, according to the invention of claim 6, since the amount of data to be processed can be reduced, the data processing time can be shortened. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. ❷ <1. First embodiment> <1.1. Structure and function> Fig! A diagram showing a pattern drawing device of a third embodiment of the present invention. Further, Fig. 2 is a bottom view showing the pattern drawing device 1. Moreover, in FIG. 1, in the convenience of illustration and description, it is defined that the z-axis direction represents the vertical direction and the XY plane represents the horizontal plane, but these are definitions of the expediency of grasping the relationship position, instead of The various directions described below are defined. The same is true in the following figures. Further, in the right cabinet, in Fig. 2, the illumination optical system 3 is indicated by a two-dot chain line for convenience of explanation. 136984.doc • 10 - 200941152 The pattern drawing device 1 is a device for drawing a pattern on a glass substrate (hereinafter referred to as "substrate") 9 步骤 in the step of manufacturing a substrate for a liquid crystal display device. A glass substrate (hereinafter, simply referred to as a "substrate") having a layer (sensing layer) of a photosensitive material (in the present embodiment, is a photoresist), and a device for drawing a specific pattern is shown in Fig. 1 and As shown in Fig. 2, the pattern stroke device 1 mainly includes a gantry 11, a moving plate group 2, an illumination optical system 3, a lightning length measuring device 41, and a control unit 8. [Amount 11] The gantry 11 has a substantially rectangular shape. The outer shape is provided with a bridge structure 12 and a moving plate group 2 in a slightly horizontal region. The bridge structure 12 is fixed to the frame n so as to be slightly horizontally placed above the moving plate group 2. 1, the gantry 11 has a function of integrally supporting the moving plate group 2 and the bridge structure 12. [Moving plate group 2] The moving plate group 2 is mainly composed of the substrate holding plate 21 holding the substrate 9 and the lower side. a support plate 22 supporting the substrate holding plate 21, a base plate 23 supporting the support plate 22 from below, a base 24 supporting the base plate 23 from below, and a rotating mechanism 211 for rotating the substrate holding plate 21 around the axis B, Sub-scanning mechanism 2 for supporting the support plate 22 in the X-axis direction (sub-scanning direction) 21. The main scanning mechanism 231 for moving the base plate 23 in the 丫-axis direction (main scanning direction). The substrate holding plate 21 is provided with a lattice-shaped adsorption groove on the upper surface thereof, and the drawings are omitted. A plurality of adsorption holes are provided in the bottom of the adsorption grooves. The adsorption holes are connected to a vacuum pump or the like, and by operating the vacuum pump, the ambient gas in the adsorption grooves can be exhausted. The substrate 90 is 136,984.doc 200941152 attached to the upper surface of the substrate holding plate 21. Therefore, the substrate holding plate 21 has a function of holding the substrate 90. The rotating mechanism 211 has a (_γ) side end attached to the substrate holding plate 21 A linear motor 211a composed of a stator provided on the upper surface of the support plate 22. Further, the rotation mechanism 211 has a rotation shaft 211b between the lower surface side of the central portion of the substrate holding plate 21 and the support plate 22. The linear motor 211a performs an action of moving the mover in the X-axis direction along the stator, and causes the substrate holding plate 21 to rotate within a specific angle around the rotation shaft 211b on the support plate 22. The sub-scanning mechanism 221 have A linear motor 221a composed of a mover mounted on the lower surface of the support plate 22 and a stator provided on the upper surface of the base plate 23. Further, the sub-scanning mechanism 221 is disposed between the support plate 22 and the base plate 23, and has a direction The sub-scanning direction extends one of the pair of guide portions 221b. By causing the linear motor 221a to operate, the support plate 22 is moved in the sub-scanning direction along the guide portion 221b on the base plate 23. ❹ The main scanning mechanism 231 has a linear motor 23 1 a formed by a mover mounted below the base plate 23 and a stator provided on the base 24. Further, the main scanning mechanism 23 1 is disposed between the base plate 23 and the stand 11 and has One of the pair of guides 23 1 b extends in the main scanning direction. By operating the linear motor 23 1 a , the base plate 23 is moved in the main scanning direction along the guide portion 231 b on the base 24 . Therefore, the substrate 90 can be moved in the main scanning direction (γ direction) by causing the main scanning mechanism 231 to operate while the substrate 90 is held by the substrate holding plate 21. Further, these moving mechanisms are controlled by the moving mechanism control unit 8.1 provided in the control unit 8 which will be described later. 136984.doc -12· 200941152 [Illumination Optics 3] The illumination optical system 3 mainly includes a laser oscillator 31, a beam splitter 32, and an irradiation unit 33. The illumination optical system 3 is provided on the gantry 11 and is disposed above the bridge structure 12 provided in the movable panel group 2. The laser vibrator 31 is a light source device that emits laser light in accordance with a specific driving signal sent from the control unit 8. The laser light emitted from the laser oscillator 31 is guided to the beam splitter via a specific optical system (not shown). The laser light guided to the beam splitter 32 is provided in the plural half of the beam splitter 32. A mirror (not shown) is divided into a plurality of light beams (in the present embodiment, six) of light having the same amount of light. Further, the plurality of divided laser light beams are emitted so as to be parallel to each other at equal intervals along the (-Y) side of the beam splitter 32. The plurality of (six in the present embodiment) irradiation unit 33 is an optical unit for irradiating the plurality of rays emitted from the beam splitter 32 to the upper surface of the substrate 9A. Each of the irradiation units 33 is provided at an upper portion of the side surface of the bridge structure body 2 at equal intervals in the sub-scanning direction so as to correspond to a plurality of rays.复 The plurality of rays emitted from the beam splitter 32 are irradiated onto the substrate 9 held by the substrate holding plate 2 through a specific optical system provided inside the respective irradiation units 33. Thereby, a specific pattern can be formed at equal intervals in the sub-scanning direction on the photosensitive material formed on the upper surface of the substrate 90. - In more detail, when the base plate 23 is moved in the main scanning direction and the light beam is emitted from the irradiation unit 33 by moving the substrate 90 in the main scanning direction, the upper surface of the substrate 90 is drawn intermittently in the main scanning direction. A plurality of patterns of patterns that are exposed to a particular width (eg, 50 nm width). When the pattern drawing device 1 finishes drawing in the main scanning direction once, the substrate holding plate 136984.doc 200941152 21 is moved in the sub-scanning direction by only the irradiation width portion of the irradiation unit 33, and the substrate holding plate U) is again - Moving toward the main sweeping direction, the surface is intermittently emitted by the illuminating unit 33. In the case of the first embodiment, the substrate 9 is offset by the irradiation width of the irradiation unit 33 in the sub-scanning direction, and the pattern scanning in the main scanning direction is repeated a certain number of times, thereby drawing in the entirety of the substrate 9〇. Special liquid crystal patterns (color slabs and tft arrays, etc. should be formed on the glass substrate).
圖3係表示照射單元33之内部構成之立體圖。在圖3中， 雖僅顯不1個照射單元33之内部構成，但其他照射單元33 也具有同等之内部構成。如圖3所示，照射單元33主要係 在直方體狀之框體内部，具有使光線通過之貫通孔33ι、 使通過貫通孔331之光線向下方反射之反射鏡332、縮小投 影透鏡及各種反射鏡等（未圖示）所構成之投影照明光學系 333。此等各構成分別被固定於框體内部而成為一體。 另外，雖省略圖示，但在投影照明光學系333，在光程 上之特定位置備置有作為光繞射元件之GLV(Grating Ught Valve :光柵光閥），可藉由改變光繞射量而可改變由照射 單元33出射之光束之照射強度（光量密度）。又，在本實施 型態中’藉由控制此光繞射元件之光線之繞射量，可控制 由照射單元33出射之光束之導通•切斷。又，此光繞射元 件係受到來自後述照射控制部812之多值型式（8位元）之控 制信號所控制。 通過具有以上構成之投影照明光學系333之光線照射至 基板90之上面時’塗佈於基板9〇之光阻會感光而將圖案描 136984.doc -14· 200941152 繪在基板90。又’在本實施型態中，雖將光繞射元件配置 於投影照明光學系333，但不限定於此，例如也可藉由在 反射鏡3 3 2之位置配置光繞射元件而使該光繞射元件兼具 有反射鏡332之功能。 [雷射測長器41] 再回到圖1，雷射測長器41具備有未圖示之雷射光源（半 ' 導體雷射）、線性干涉系及接收器，具有檢測被檢測對象 物之位置（測長）之功能。雷射測長器41配置於基座板23之 (-Y)側。 在雷射測長器41中，由雷射光源出射之光束入射於設置 在基座板23之反射鏡411。而’其反射光在線性干涉系與 原來之光束相干涉而被接收器受光。依據來自該接收器之 輸出，可尚精度地檢測有關基座板23之主掃描方向之位 置。又，基板保持板21之主掃描方向之位置係依存於基座 板23之主掃描方向之移動，故雷射測長器41所檢測之基座 φ 板23之位置資訊相當於保持於基板保持板21之基板90之主 掃描方向之位置資訊。在本實施型態之圖案描繪裝置i 中，依據雷射測長器41之檢測結果，決定來自照射單元33 之光束之照射時點。 .[控制部8] 圖4係表示圖案描繪裝置丨之各部與控制部8之間之連接 之區塊圖。 控制部8主要係電性連接於作為移動板群2之移動機構之 轉動機構211、副掃描機構221、主掃描機構231、照明光 136984.doc 200941152 學系3之雷射振盈器31、照射單元33及雷射測長器41。 又，控制部8主要具備有運算部8丨、記憶部82、輸入部83 及顯示部84,具有施行上述圖案描繪裝置1之各構成之控 制之功能。 運算部8 1主要具備有移動機構控制部8丨丨、照射控制部 812及資料合成部813。移動機構控制部811係控制移動板 群2之各移動機構之動作。資料合成部813留待後述，具有 ^ 產生合成記錄有應對基板90照射光束之位置資訊等之各種 資料（圖案區域照射資料821、周緣區域照射資料822、及 識別區域照射資料）之合成資料824之功能。 照射控制部812係依據資料合成部813所產生之合成資料 824、與雷射測長器41對基板9〇之位置之檢測結果，施行 來自照明光學系3，特別是來自照射單元33之光束之照射 控制。又，照射控制部812係藉由對設於照射單元33之光 繞射元件（GLV)輸出多值型式（在本實施型態中’為8位元） Φ 之數位控制信號，而具有多階段（256階段）控制由照射單元 33輸出之光束之照射強度之功能。 又，在此之多值係指包含照射強度為零之情形之值在内 3值以上（在非為零之照射強度’則為2值以上）。又，所謂 - 多階段係指包含照射強度為零之情形之階段在内3階段以 上（在非為零之照射強度，則為2階段以上）。即，來自照射 單元3 3之光束之照射並非僅係受到導通/切斷控制，在導 通時之照射強度方面，也至少受到2階段以上之控制。例 如，採行3階段控制光束之照射強度（強度分為零、弱、強） 136984.doc 200941152 之情形，使光阻層較薄之基板90之中央部分以較弱之強度 曝光，使光阻層較厚之基板90之周緣部分以較強之強度曝 光。藉此，可在時間上連續之一連串之掃描之曝光處理 中’確實使基板9〇之各區域之光阻變性。 控制部8之構成中，一時地記憶資料之RAM、專用於讀 取之ROM、及磁碟裝置等符合作為記憶部“之具體例，也 . 彳使用可搬動性之光磁碟及記憶卡等記憶媒體、及該等之 φ 冑取裝置° X ’按紐及開關類（含鍵盤及滑鼠）等符合作為 輸入部83,但如觸控面板顯示器―般，也可採用兼具有顯 不器84之功能之輸入部。液晶顯示器及各種燈等符合作為 顯示器84。 操作員可經由輸入部83設定基板保持板2丨之主掃描方向 之移動速度、及產生於基板90上之複數光照射區域之間隔 等又，藉由操作員之輸入等，可儲存含光束照射於基板 9〇之照射位置資訊之資料（圖案區域照射資料821、周緣區 ❿ 域照射資料822、識別區域照射資料卜在此，一面參照圖 5至圖7, 一面具體地說明有關包含基板9〇上之各區域、與 對應於各區域之光束照射位置資訊之資料。 ' [圖案區域901] 圖5係表示在基板9〇之主面區域9〇〇之各區域之位置之 圖。一般，在一塊基板90之中央部分描繪著複數面板用圖 案在本實施型態中，如圖5所示，在主面區域9〇〇之中央 邛分之4處配置（設定）有圖案區域9〇1，此圖案區域9〇ι之— 個份相當於形成單一面板用圖案之區域。又，對應於圖案 136984.doc -17- 200941152 區域901之光束之照射位置資訊係被記錄於圖案區域照射 資料821。 [周緣區域902] 又，基板90之主面區域900中，在圖案區域901外之區域 (周邊區域）含有周緣區域902。所謂周緣區域902，係沿著 周邊區域中之基板90之端緣之特定寬度之區域，且包含光 • 阻層RG之厚度厚於圖案區域901之部分之區域（參照圖 u)。又，在本實施型態中，周緣區域902係包含主面區域 〇 900之外側之區域。又，對應於周緣區域902之光束之照射 位置資訊係被記錄於周緣區域照射資料822。 [識別區域903] 在周邊區域中’除了周緣區域902以外，含有識別區域 903。所謂識別區域903，係指位於上述各圖案區域9〇1附 近之區域而記錄有識別資訊（例如批號等）之區域。在識別 區域903中，描繪識別資訊作為條碼，在其後之步驟中， φ 該識別資訊被特定之讀取裝置所讀取。又，對應於識別區 域903之光束之照射位置資訊係被記錄於識別區域照射資 料。 ' [圖案區域照射資料821] ' 圖6係表示圖案區域9〇1描繪用之圖案區域照射資料821 之圖。圖案區域照射資料821係將有關CAD(c〇mputer Aided Design system—電腦輔助設計）所設計之布線圖案之 資料光柵掃描化之圖像資料’各畫素對應於基板9〇上之各 部分。 136984.doc -18- 200941152 更具體而言，首先，使略寬於基板90之主面區域900之 區域在空間上展開後’依據CAD資料，在各晝素設定照射 之位置與不施行照射之位置》進一步在各畫素設定有關光 束之照射強度之資訊（照射強度值）。即，使照射強度資訊 對應於各照射位置。此照射強度值係以8位元表現 (〇〇(HEX)〜FF(HEX))之多值型式被記錄，FF(HEX)時，照 射強度最大，OO(HEX)時，照射強度為零（切斷照射）。在 本實施型態之圖案區域照射資料821中，對有關對應於圖 案區域901内之非曝光部分及周邊區域（圖案區域9〇1外）之 部分之晝素，將照射強度值設定為OO(HEX)，對有關圖案 區域901中之照射光束之畫素，將照射強度值設定為 55(HEX) 〇 [周緣區域照射資料822] 圖7係表示周緣區域902描繪用之周緣區域照射資料822 之圖。周緣區域照射資料822係與圖案區域照射資料821同 Q 樣之圖像資料。又’在本實施型態中，在周緣區域照射資 料822所含之各晝素中，在對應於周緣區域902之晝素中， 將照射強度值設定為FF(HEX)，有關對應於周緣區域902 外之畫素，則將照射強度值設定為00(HEX)。 • [識別區域照射資料] 識別區域照射資料雖省略圖示，但屬於與圖案區域照射 資料821及周緣區域照射資料822同樣之圖像資料，在對應 於記錄識別資訊之識別區域903内之曝光部分之晝素中， 將照射強度值設定為55(HEX)，在對應於識別區域903内之 136984.doc -19- 200941152 非曝光部分及識別區域903外之區域之畫素，將照射強度 值設定為OO(HEX)。 [合成資料824] 圖8係表示基板90描繪用之合成資料824之圖。如前所 述’合成資料824係資料合成部813所產生之資料，且將圖 案區域照射資料821、周緣區域照射資料822、及識別區域 • 照射資料合成為一（具體上，施行求出各晝素之照射強度 值之最大值之邏輯和運算處理）之資料。 更具體而言，算出有關合成資料824之畫素座標位置 (Xn，Yn)之畫素之照射控制值之情形，比較各照射資料所 含之畫素（Χη，Υη)之照射強度資訊，選擇照射強度最大之 值（最大照射強度值）作為合成資料824之晝素（Χη，Υη)之照 射強度。例如，各照射資料（圖案區域照射資料821、周緣 區域照射資料822、及識別區域照射資料）所含之畫素 (Χη，Υη)之照射強度值依序為〇〇(hex)、ff(HEX)、 ❹ 00(HEX)之情形，選擇FF(HEX)作為合成資料824之畫素 (Xn，Yn)之照射控制值。資料合成部8丨3係以如此方式產生 合成資料824。 依據本實施型態之合成資料824，可利用充分大於（2倍 .以上）光阻層RG之厚度較薄之圖案區域9〇1之照射強度，對 光阻層RG之厚度較厚之周緣區域902(參照圖π)施行光束 之照射（照射強度值*FF(HEX)>55(HEX))。因此，可在其 後之顯影步驟確實除去基板9〇之周緣部分之光阻層 又由於在周邊區域之照射資料中含有識別區域照射資 136984.doc -20- 200941152 料’在圖案描繪之同時’也可記錄有關基板9〇之識別資訊 (在本實施型態中’為面板單位之識別資訊），故可縮短基 板處理（識別資訊之記錄）所需之時間。 以上係圖案描綠裝置1之構成及功能之說明。其次，說 明有關圖案描繪裝置動作。 < 1.2.動作> 圖9係表示圖案描繪裝置丨之動作之流程之圖。首先，在 操作員輸入各照射資料（圖案區域照射資料821、周緣區域 照射資料822、及識別區域照射資料）時，圖案描繪裝置i 使資料合成部813執行動作而產生上述之合成資料824(步 驟si) ^所產生之合成資料824被儲存於記憶部82 ^ 其次，利用未圖示之搬送機器人等將主面上預先塗佈正 型感光材料之基板90搬入基板保持板21上，並載置於基板 保持板21之上面。基板90被形成於基板保持板21之吸附孔 所吸引，並以略水平姿勢被保持於基板保持板之上面（步 驟 S2)。 其次，執行施行載置於基板保持板21之基板9〇之定位之 對準（步驟S3)。具體上，圖案描繪裝置1係藉由未圖示之 攝影機等將預先形成於基板9〇之上面之特定位置之記號 (標記）攝像，利用控制部8分析脫離理想狀態之位置（理想 位置）之偏移量。而，藉由移動機構控制部811使轉動機構 211、副掃描機構221及主掃描機構231執行動作，而修正 脫離基板90之理想位置之偏移量。藉此，使基板9〇之位置 高精度對正於理想的位置。 136984.doc 21 · 200941152 其次，對修正配置位置後之基板9〇執行藉由光束照射之 圖案描繪（步驟S4)。圖1〇係表示使基板9〇移動至移動開始 位置之狀態之圖。在此步驟中，首先，移動機構控制部 811使各移動機構執行動作，以便使基板9〇到達主掃描方 向之特定之移動開始位置。具體上，如圖1〇所示，使基板 90移動至使使基板9〇之主掃描方向之前方端（+γ側之端部） 之位置到達比照射單元33之位置更靠近（γ)側之位置。 ❹ 基板9〇向特定之移動開始位置 之移動完成時，接著，移 動機構控制部811使主掃描機構231執行動作，而使基板9〇 開始向主掃描方向移動。又，與此同時，照射控制部M2 依據合成資料824與雷射測長器41所輸出之基板9〇之位置 資訊，向照射單元33輸出控制信號。藉此，在特定時點， 由照射單元33向移動於主掃描方向之基板9〇出射光束。 第1次之（+Υ)方向之曝光處理結束時（往程），副掃描機構 22 1被驅動使基板向副掃描方向（例如（+χ)側）移動特定 〇 寬度份。此移動量相當於照射單元33之照射寬度份。而， 當基板90移動時，主掃描機構231被驅動，基板9()開始向（_ Y)方向移動。與此同時，由照射單幻3週期性地照射脈衝 光’將圖案等描縿在基板9〇(復程）。藉由持續此往復動作 特定次數，在基板9G之全面形成（描繪}圖案q，在此掃 描時’在周緣區域902及識別區域9〇3，也被施行依據合成 資料8M之曝光處理。 在步驟S4，被指緣圖案（及周緣區域902與識別區 域903被曝光）後之基板9〇被搬送機器人等由基板保持板u 136984.doc -22- 200941152 之上面被搬出（步驟S5)。又，被描繪在基板9〇之各圖案係 在其後之步驟被顯影處理而成為特定之液晶圖案。 以上係有關圖案描緣裝置1之動作之說明。 在本實把型態中，圖案描繪裝置丨因具備有光束之照射 錢可變之照射單元33 ’ &可依照感材層《厚度切換照射 強度。藉此，可在時間上連續地在基板9〇之全面中施行可 變之光束之照射，故可對形成在基板9〇上之感材層施行充 φ 分之曝光處理。藉此，無必要使用基板90之各區域專用之 曝光裝置（例如，周邊曝光裝置及記錄識別資訊之編號裝 置等），故可縮短光束之曝露處理所需之時間。又，由於 也無必要向專用裝置之搬送，故可縮短搬送時間，同時可 抑制基板90之損傷等引起之良率之降低。 <2.第2實施型態> 在上述實施型態中，雖說明圖案區域照射資料821(參照 圖6)及周邊區域照射資料（包含周緣區域照射資料822及識 ❹ 別區域照射資料）中，含有不施行光束之照射（即，照射強 度值=00(ΗΕΧ))部分之晝素資料之情形，但並不限定於 此。即，也可取得圖案區域照射資料及周邊區域照射資料 作為不含有不施行光束之照射部分之位置資訊之資料。 •更具體而言，在上述實施型態中，在產生照射資料之 際’設定比基板之主面區域9〇〇略寬之區域後，對所有書 素位置分配零或有限之照射強度值，但在本實施型態中， 在圖案區域、周緣區域及識別區域之各區域中，使照射資 料僅含有具有非為零之照射強度值之位置（晝素座標位 136984.doc -23· 200941152 置）。使各曝光區域（圖案區域、周緣區域、識別區域）展開 至比所設定之主面區域900略寬之區域而在空間上加以合 成，但對未含有作為對任一曝光區域内之資料均賦予有限 之照射強度值之座標之座標位置（未被列為對任一曝光區 域内之資料均賦予有限之照射強度值之對象之座標位置， 即非曝光座標位置），提供00(HEX)作為曝光強度值。 如此，可藉由在圖案區域及周邊區域分別產生照射資 ❹ 料，以減少處理之資料量，故可縮短產生合成資料824等 之時及轉送於記憶部82之際等之資料處理時間。 <3.變形例> 以上雖已說明有關本發明之實施型態，但，本發明並不 限定於上述實施型態，可實施種種之變形。 例如，在上述實施型態中，雖在照射單元33設置作為光 繞射元件之GLV，可依照各畫素變更照射強度，但不限定 於此。例如，也可準備複數光源，藉由選擇依照所希望之 © 照射強度使用之光源數，而使光束之照射強度呈現多階 段。又，也可藉由使用減光濾光片，施行照射強度之多階 段控制。又’例如也可藉由可變光衰減器使通過分束器32 後之光線衰減’多階段控制照射強度。 此等之情形，雖難以依照各晝素座標位置使照射強度變 化，但如上述實施型態一般，在以同一照射強度使特定畫 素以上之集合區域（例如圖案區域9〇1及周緣區域9〇2)分別 施行曝光時，如此等之構成亦屬有效。 又，在上述實施型態中’雖說明在執行對準及描繪處理 136984.doc •24· 200941152 等之則，預先產生合成資料824(參照圖9)，但當然不限定 於此例如，也可預先取得圖案區域照射資料82 1、周緣 區域照射資料822、及識別區域照射資料作為照射資料， 在施行掃描處理之時，一面參照各照射資料，一面決定由 ⑲射單元33出射光束之時點。更詳細言之，也可將照射控 制4812構&為：在出射控制用之時點信號之產生時，可 從對應於基板90之位置之各照射資料之各晝素之照射強度 ❹值中，選擇最大之值（邏輯和運算處理），將依據該值之控 制信號輸出至照射單元33。 又，在上述實施型態中，雖說明以256階段（〇〇(ΗΕχ)〜 FF(HEX))施行照射強度之控制，但當然不限定於此。但， 考慮如圖11所說明之形成於基板9〇上之光阻層RG之各區 域之厚度，最好將圖案描繪裝置丨構成為至少可利用3階段 以上（包含零之情形）之照射強度施行照射。 又’在上述實施型態中’雖將圖案區域9〇丨之光束之照 φ 射強度設定為一定（照射強度值=55(HEX))，但當然不限定 於此，可適當地加以變更。例如，也可藉由測定圖案區域 901内之各部分之光阻層rg之膜厚，而以比膜厚較薄之部 分略大之照射強度將光束照射至較厚之部分。藉此，可依 照膜厚適切地施行曝光處理。 又’將周緣區域902之範圍、及該區域之光束之照射強 度設定為同條件之情形，也可預先對圖案區域照射資料 821附加而產生有關周緣區域9〇2之光束之照射資訊。 又’在上述實施型態中’對於基座板23之主掃描方向， 136984.doc -25- 200941152 為檢測位置而使用雷射測長器41，但當然不限定於此。例 如，也可藉由設於線性馬達231a或導部231b之編碼器檢測 基座板23之位置。 又，在上述實施型態中，雖說明一面使移動板群2向主 掃描方向移動，一面由照射單元33照射光束，但不限定於 此種方式。例如，圖案描繪裝置也可採用一面將移動板群 固定（即固定基板90)，一面移動照射單元33，藉以施行圖 案描繪之構成。 ❹ 士 又，在上述實施型態中，雖說明檢測主掃描方向之基座 板23與照射單元33之相對位置，但不限定於此。例如，也 可檢測有關副掃描方向之相對位置。此情形，也可提高有 關副掃描方向之描緣精度。 又，在上述實施型態中，雖利用光述作為照射於基板9〇 之旎量射束，但不限定於此。例如，也可利用電子束、離 子束、X線等》 〇 又，在上述實施型態中，雖說明有關形成正型光阻層 RG之基板90,但本發明也可在曝光處理形成負型感材層 之基板90之際適用。 另外，在上述實施型態及各變形例中所說明之各構成， -只要不相互矛盾，皆可適宜地予以組合。 【圖式簡單說明】 圖1係表示本發明之第丨實施型態之圖案描繪裝置之立體 圖。 圖2係表示圊案描繪裝置之仰視圖。 136984.doc -26· 200941152 圖3係表示照射單元之内部構成之立體圖。 圖4係表示圖案描繪裝置之各部與控制部之間之連接之 區塊圖。 圖5係表示在基板之主面區域之各區域之位置之圖。 圖ό係表示圖案區域描繪用之圖案區域照射資料之圖。 圖7係表示周緣區域描繪用之周緣區域照射資料之圖。 圖8係表示基板描繪用之合成資料之圖。 圖9係表示圖案描繪裝置之動作之流程之圖。 圖1 〇係表示使基板移動至移動開始位置之狀態之圖。 圖11係表示形成有正型之光阻層之基板之主面（上）與側 面（下）之圖。 【主要元件符號說明】 1 圖案描繪裝置 2 移動板群 3 照明光學系 8 控制部 10 基板保持板 21 基板保持板 33 照射單元 41 雷射測長器 90 基板 221 副掃描機構 231 主掃描機構 333 投影照明光學系 136984.doc 200941152 811 移動機構控制部 812 照射控制部 813 資料合成部 821 圖案區域照射資料 822 周緣區域照射資料 824 合成資料 - 900 主面區域 ❿ 901 圖案區域 902 周緣區域 903 識別區域 RG 光阻層 136984.doc -28-FIG. 3 is a perspective view showing the internal structure of the irradiation unit 33. In Fig. 3, although only the internal configuration of one irradiation unit 33 is shown, the other irradiation units 33 have the same internal configuration. As shown in FIG. 3, the irradiation unit 33 is mainly formed in a rectangular parallelepiped frame, and has a through hole 331 through which light passes, a mirror 332 that reflects light passing through the through hole 331, a reduced projection lens, and various reflections. A projection illumination optical system 333 composed of a mirror or the like (not shown). Each of these components is fixed to the inside of the casing and integrated. Further, although not shown in the drawings, in the projection illumination optical system 333, a GLV (Grating Ught Valve) as a light diffraction element is provided at a specific position on the optical path, and the amount of light diffraction can be changed. The irradiation intensity (light amount density) of the light beam emitted from the irradiation unit 33 can be changed. Further, in the present embodiment, by controlling the amount of diffraction of the light of the light diffraction element, the conduction and the cutting of the light beam emitted from the irradiation unit 33 can be controlled. Further, the light diffracting element is controlled by a control signal from a multi-value type (8-bit) of the irradiation control unit 812 which will be described later. When the light having the projection illumination optical system 333 having the above configuration is irradiated onto the upper surface of the substrate 90, the photoresist applied to the substrate 9 is light-sensitive, and the pattern 136984.doc -14·200941152 is drawn on the substrate 90. Further, in the present embodiment, the light diffraction element is disposed in the projection illumination optical system 333. However, the present invention is not limited thereto. For example, the light diffraction element may be disposed at the position of the mirror 332. The light diffractive element also functions as a mirror 332. [Laser length measuring device 41] Returning to Fig. 1, the laser length measuring device 41 is provided with a laser light source (semi-conductor laser), a linear interference system, and a receiver (not shown), and has an object to be detected. The function of the position (measuring length). The laser length measuring device 41 is disposed on the (-Y) side of the base plate 23. In the laser length measuring device 41, a light beam emitted from a laser light source is incident on a mirror 411 provided on the base plate 23. And the reflected light is received by the receiver by the linear interference system interfering with the original beam. Depending on the output from the receiver, the position of the main scanning direction of the base plate 23 can be accurately detected. Further, since the position of the substrate holding plate 21 in the main scanning direction is dependent on the movement in the main scanning direction of the base plate 23, the position information of the susceptor φ plate 23 detected by the laser length measuring device 41 is equivalent to being held on the substrate. Position information of the main scanning direction of the substrate 90 of the board 21. In the pattern drawing device i of the present embodiment, the irradiation timing of the light beam from the irradiation unit 33 is determined in accordance with the detection result of the laser length measuring device 41. [Control unit 8] Fig. 4 is a block diagram showing the connection between the respective portions of the pattern drawing device 与 and the control unit 8. The control unit 8 is mainly electrically connected to the rotating mechanism 211, the sub-scanning mechanism 221, the main scanning mechanism 231, and the illumination light 136984.doc 200941152 as the moving mechanism of the moving plate group 2, and the laser oscillator 31, irradiation Unit 33 and laser length measuring device 41. Further, the control unit 8 mainly includes a calculation unit 8A, a storage unit 82, an input unit 83, and a display unit 84, and has a function of performing control of each configuration of the pattern drawing device 1. The calculation unit 8 1 mainly includes a movement mechanism control unit 8A, an irradiation control unit 812, and a material synthesizing unit 813. The moving mechanism control unit 811 controls the operation of each moving mechanism of the moving plate group 2. The data synthesizing unit 813 has a function of generating a synthetic material 824 that synthesizes and records various kinds of materials (pattern area irradiation data 821, peripheral area irradiation data 822, and identification area irradiation data) that are combined with position information for irradiating the light beam on the substrate 90. . The illumination control unit 812 performs the light beam from the illumination optical system 3, particularly from the illumination unit 33, based on the composite data 824 generated by the data synthesis unit 813 and the detection result of the position of the substrate 9A with the laser length detector 41. Irradiation control. Further, the illumination control unit 812 has a multi-stage by outputting a multi-value type (in the present embodiment, '8-bit) Φ digital control signal to the light diffraction element (GLV) provided in the illumination unit 33. (256 stages) The function of controlling the illumination intensity of the light beam output by the illumination unit 33. In addition, the multi-value here means three or more values including the value of the case where the irradiation intensity is zero (two or more values in the non-zero irradiation intensity). Further, the term "multi-stage" means three stages or more including the stage of the case where the irradiation intensity is zero (two stages or more in the case of non-zero irradiation intensity). That is, the irradiation of the light beam from the irradiation unit 33 is not only controlled by the on/off, but also controlled by at least two stages in terms of the irradiation intensity at the time of conduction. For example, in the case of a 3-stage control beam illumination intensity (intensity is zero, weak, strong) 136984.doc 200941152, the central portion of the thinner substrate 90 is exposed to a weaker intensity, so that the photoresist The peripheral portion of the thicker substrate 90 is exposed with a stronger intensity. Thereby, it is possible to surely denature the photoresist of each region of the substrate 9 in the exposure processing of one successive series of scans in time. In the configuration of the control unit 8, the RAM for temporarily storing data, the ROM dedicated to reading, and the disk device conform to the specific example of the memory unit, and also use the removable optical disk and the memory card. And other memory media, and these φ capture devices ° X 'buttons and switches (including keyboard and mouse), etc. as the input part 83, but as the touch panel display - can also be used The input unit of the function of the device 84. The liquid crystal display and various lamps and the like are matched as the display 84. The operator can set the moving speed of the substrate holding plate 2 in the main scanning direction and the plurality of lights generated on the substrate 90 via the input unit 83. The interval between the irradiation areas and the like can be stored by the operator's input or the like, and the information of the irradiation position information of the light beam irradiated on the substrate 9 can be stored (the pattern area irradiation data 821, the peripheral area area irradiation data 822, the identification area irradiation data Here, with reference to FIG. 5 to FIG. 7, the information on the respective regions on the substrate 9 and the beam irradiation position information corresponding to each region will be specifically described. '[Pattern region 901] FIG. A view showing the positions of the respective regions of the main surface region 9 of the substrate 9A. Generally, a pattern for a plurality of panels is drawn in a central portion of a substrate 90 in the present embodiment, as shown in FIG. The central portion of the surface area 9 is arranged (set) with a pattern area 9〇1, which is equivalent to an area forming a single panel pattern. Further, corresponding to the pattern 136984. Doc -17- 200941152 The irradiation position information of the light beam of the area 901 is recorded in the pattern area irradiation material 821. [Circumference area 902] Further, in the main surface area 900 of the substrate 90, the area outside the pattern area 901 (peripheral area) The peripheral region 902 is included. The peripheral region 902 is a region of a specific width along the edge of the substrate 90 in the peripheral region, and includes a region in which the thickness of the photoresist layer RG is thicker than the portion of the pattern region 901 (refer to FIG. Further, in the present embodiment, the peripheral region 902 includes a region on the outer side of the main surface region 〇 900. Further, the irradiation position information of the light beam corresponding to the peripheral region 902 is recorded in the peripheral region illumination data 822. [Identification area 903] In the peripheral area, the identification area 903 is included in addition to the peripheral area 902. The identification area 903 refers to an area located near the respective pattern areas 910 and recorded with identification information (for example, a lot number, etc.). In the recognition area 903, the identification information is depicted as a barcode, and in the subsequent step, φ the identification information is read by the specific reading device. Further, the illumination position information of the light beam corresponding to the identification area 903 is The information is recorded in the identification area. '[Pattern area illumination data 821]' Fig. 6 is a view showing the pattern area illumination data 821 for the pattern area 〇1 drawing. The pattern area irradiation data 821 is an image data for which the data of the wiring pattern designed by CAD (c〇mputer Aided Design system) is raster-received, and each pixel corresponds to each part on the substrate 9. 136984.doc -18- 200941152 More specifically, first, after the area slightly wider than the main surface area 900 of the substrate 90 is spatially expanded, 'based on the CAD data, the irradiation position is set at each element and the irradiation is not performed. Position" further sets information on the irradiation intensity of the light beam (irradiation intensity value) in each pixel. That is, the irradiation intensity information is made to correspond to each irradiation position. This irradiation intensity value is recorded in a multi-value pattern of octet performance (HEX to FF (HEX)), and the irradiation intensity is the largest at FF (HEX) and zero at OO (HEX). Cut off the illumination). In the pattern area irradiation material 821 of the present embodiment, the illumination intensity value is set to OO for the pixel corresponding to the portion corresponding to the non-exposed portion and the peripheral region (outside the pattern region 9〇1) in the pattern region 901. HEX), for the pixel of the illumination beam in the pattern region 901, the illumination intensity value is set to 55 (HEX) 〇 [peripheral region illumination data 822]. FIG. 7 shows the peripheral region illumination data 822 for the peripheral region 902. Figure. The peripheral area illumination data 822 is the same as the image data of the pattern area illumination data 821. Further, in the present embodiment, among the respective elements contained in the peripheral region irradiation data 822, the irradiation intensity value is set to FF (HEX) in the element corresponding to the peripheral region 902, and the corresponding peripheral region is associated with For the 902 outside the pixel, the illumination intensity value is set to 00 (HEX). • [Identification area illumination data] Although the identification area illumination data is omitted, it belongs to the same image data as the pattern area illumination data 821 and the peripheral area illumination data 822, and the exposure part in the identification area 903 corresponding to the record identification information. In the element, the irradiation intensity value is set to 55 (HEX), and the illumination intensity value is set in the pixel corresponding to the area outside the 136984.doc -19-200941152 non-exposed portion and the recognition region 903 in the recognition region 903. It is OO (HEX). [Synthetic Data 824] FIG. 8 is a view showing the synthesized material 824 for drawing the substrate 90. As described above, the synthetic material 824 is a data generated by the data synthesizing unit 813, and the pattern area irradiation data 821, the peripheral area irradiation data 822, and the identification area/irradiation data are synthesized into one (specifically, the calculation is performed for each 昼The data of the logical sum of the maximum value of the illumination intensity value. More specifically, the illumination control value of the pixel of the pixel position (Xn, Yn) of the synthesized data 824 is calculated, and the illumination intensity information of the pixels (Χη, Υη) contained in each illumination data is compared and selected. The maximum value of the irradiation intensity (the maximum irradiation intensity value) is used as the irradiation intensity of the halogen (Χη, Υη) of the synthetic data 824. For example, the illumination intensity values of the pixels (Χη, Υη) contained in each of the irradiation data (the pattern area irradiation data 821, the peripheral area irradiation data 822, and the identification area irradiation data) are 〇〇 (hex), ff (HEX). In the case of ❹ 00 (HEX), FF (HEX) is selected as the illumination control value of the pixel (Xn, Yn) of the synthesized material 824. The data synthesizing unit 8丨3 generates synthetic material 824 in this manner. According to the synthetic material 824 of the present embodiment, the peripheral region of the photoresist layer RG having a thicker thickness than the thickness of the pattern region 9〇1 having a thinner thickness than the (2 times or more) photoresist layer RG can be utilized. 902 (refer to Fig. π) is irradiated with a light beam (irradiation intensity value * FF (HEX) > 55 (HEX)). Therefore, in the subsequent development step, the photoresist layer of the peripheral portion of the substrate 9 is surely removed, and the identification region is irradiated by the illumination material in the peripheral region. 136984.doc -20- 200941152 "At the same time as the pattern is drawn" It is also possible to record the identification information on the substrate 9 (in the present embodiment, 'the identification information of the panel unit'), so that the time required for the substrate processing (recording of the identification information) can be shortened. The above description of the configuration and function of the pattern green device 1. Next, the operation of the pattern drawing device will be described. <1.2. Operation> Fig. 9 is a view showing the flow of the operation of the pattern drawing device. First, when the operator inputs the respective irradiation data (the pattern area irradiation data 821, the peripheral area irradiation data 822, and the identification area irradiation data), the pattern drawing device i causes the material synthesizing unit 813 to perform an operation to generate the above-described synthesized material 824 (step Si) The generated synthetic material 824 is stored in the memory unit 82. Next, the substrate 90 on which the positive photosensitive material is applied in advance on the main surface is carried onto the substrate holding plate 21 by a transfer robot or the like (not shown), and placed thereon. On the upper surface of the substrate holding plate 21. The substrate 90 is attracted by the adsorption holes formed in the substrate holding plate 21, and is held on the upper surface of the substrate holding plate in a slightly horizontal posture (step S2). Next, the alignment of the positioning of the substrate 9 placed on the substrate holding plate 21 is performed (step S3). Specifically, the pattern drawing device 1 captures a mark (mark) which is formed in advance at a specific position on the upper surface of the substrate 9 by a camera or the like (not shown), and analyzes the position (ideal position) from the ideal state by the control unit 8. Offset. On the other hand, the movement mechanism control unit 811 causes the rotation mechanism 211, the sub-scanning mechanism 221, and the main scanning mechanism 231 to operate to correct the amount of shift from the ideal position of the substrate 90. Thereby, the position of the substrate 9 is accurately aligned to an ideal position. 136984.doc 21 · 200941152 Next, the pattern drawing by the light beam irradiation is performed on the substrate 9A after the correction of the arrangement position (step S4). Fig. 1 is a view showing a state in which the substrate 9 is moved to the movement start position. In this step, first, the moving mechanism control unit 811 causes each of the moving mechanisms to perform an operation to cause the substrate 9 to reach a specific movement start position of the main scanning direction. Specifically, as shown in FIG. 1A, the substrate 90 is moved so that the position of the square end (the end portion on the +γ side) in the main scanning direction of the substrate 9 is closer to the (γ) side than the position of the irradiation unit 33. The location. ❹ When the movement of the substrate 9 to the specific movement start position is completed, the movement mechanism control unit 811 causes the main scanning unit 231 to operate to move the substrate 9 向 in the main scanning direction. At the same time, the irradiation control unit M2 outputs a control signal to the irradiation unit 33 based on the position information of the synthetic material 824 and the substrate 9〇 output from the laser length measuring device 41. Thereby, at a specific timing, the light beam is emitted from the irradiation unit 33 toward the substrate 9 that is moved in the main scanning direction. When the exposure processing in the first (+Υ) direction is completed (the forward process), the sub-scanning mechanism 22 1 is driven to move the substrate in the sub-scanning direction (for example, the (+χ) side) by a specific width portion. This amount of movement corresponds to the irradiation width portion of the irradiation unit 33. On the other hand, when the substrate 90 moves, the main scanning mechanism 231 is driven, and the substrate 9 () starts moving in the (Y) direction. At the same time, the pulsed light is periodically irradiated by the illumination single illusion 3 to trace the pattern or the like on the substrate 9 (return). By continuing the reciprocating operation a certain number of times, the entire surface of the substrate 9G is formed (drawing the pattern q, and at the time of scanning, the peripheral region 902 and the identification region 9〇3 are also subjected to exposure processing in accordance with the synthesized material 8M. In S4, the substrate 9 that has been subjected to the finger edge pattern (and the peripheral region 902 and the identification region 903 is exposed) is carried out by the transfer robot or the like from the upper surface of the substrate holding plate u 136984.doc -22- 200941152 (step S5). Each of the patterns drawn on the substrate 9 is developed to be a specific liquid crystal pattern in the subsequent steps. The above description relates to the operation of the pattern striating device 1. In the present embodiment, the pattern drawing device 丨The irradiation unit 33' can be switched according to the thickness of the material layer "thickness", whereby the irradiation of the variable beam can be continuously performed in the entire substrate 9〇 in time. Therefore, the photosensitive layer formed on the substrate 9 can be subjected to exposure processing, whereby it is not necessary to use an exposure device dedicated to each region of the substrate 90 (for example, peripheral exposure device and recording recognition) Since the numbering device of the information is not used, the time required for the exposure processing of the light beam can be shortened. Moreover, since it is not necessary to transport to the dedicated device, the transportation time can be shortened, and the yield caused by the damage of the substrate 90 can be suppressed. <2. Second embodiment> In the above embodiment, the pattern area irradiation data 821 (refer to FIG. 6) and the peripheral area irradiation data (including the peripheral area irradiation data 822 and the identification area) will be described. In the case of the irradiation data, the case where the halogen material is not irradiated (that is, the irradiation intensity value = 00 (ΗΕΧ)) is not limited thereto. That is, the pattern region irradiation data and the peripheral region can also be obtained. The illuminating data is used as information that does not contain positional information of the irradiated portion where the light beam is not applied. More specifically, in the above embodiment, the setting is set to be slightly wider than the main surface area 9 基板 of the substrate when the illuminating data is generated. After the region, all the pixel positions are assigned zero or finite illumination intensity values, but in the present embodiment, in the regions of the pattern region, the peripheral region, and the recognition region, The data only contains the position with non-zero illumination intensity value (the symmetry position 136984.doc -23· 200941152). The exposure area (pattern area, peripheral area, recognition area) is expanded to the main surface set. Region 900 is a region that is slightly wider and spatially synthesized, but does not contain coordinates that are coordinates that give a limited illumination intensity value to any of the exposed regions (not listed as being in any of the exposed regions) The data is given to the coordinate position of the object of the limited illumination intensity value, that is, the non-exposure coordinate position), and 00 (HEX) is provided as the exposure intensity value. Thus, by separately generating the irradiation material in the pattern area and the peripheral area, By reducing the amount of data to be processed, it is possible to shorten the data processing time when the synthetic material 824 or the like is generated and when it is transferred to the memory unit 82. <3. Modifications> Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made. For example, in the above embodiment, the GLV as the optical diffraction element is provided in the irradiation unit 33, and the irradiation intensity can be changed in accordance with each pixel, but the invention is not limited thereto. For example, a plurality of light sources can also be prepared, and the intensity of the light beam is presented in multiple stages by selecting the number of light sources to be used in accordance with the desired © illumination intensity. Further, multi-stage control of the irradiation intensity can be performed by using a dimming filter. Further, the illumination intensity can be controlled in multiple stages by, for example, attenuating the light passing through the beam splitter 32 by a variable optical attenuator. In such a case, although it is difficult to change the irradiation intensity in accordance with the position of each elemental coordinate, as in the above-described embodiment, a collection region of a specific pixel or more is provided with the same irradiation intensity (for example, the pattern region 9〇1 and the peripheral region 9). 〇 2) When performing exposure separately, the composition of such is also valid. Further, in the above-described embodiment, it is described that the synthetic material 824 (see FIG. 9) is generated in advance when the alignment and drawing processing 136984.doc • 24· 200941152 is performed, but it is of course not limited thereto. The pattern area irradiation data 821, the peripheral area irradiation data 822, and the identification area irradiation data are acquired in advance as irradiation data, and when the scanning processing is performed, the timing at which the light beam is emitted by the 19-beam unit 33 is determined while referring to the respective irradiation data. More specifically, the illumination control 4812 can be configured to: in the case of the generation of the point signal for the emission control, from the illumination intensity threshold of each element of each of the illumination data corresponding to the position of the substrate 90, The maximum value (logical sum operation processing) is selected, and a control signal according to the value is output to the illumination unit 33. Further, in the above-described embodiment, the control of the irradiation intensity is performed in the 256th step (〇〇(ΗΕχ) to FF(HEX)), but it is of course not limited thereto. However, considering the thickness of each region of the photoresist layer RG formed on the substrate 9A as illustrated in Fig. 11, it is preferable to form the pattern drawing device 照射 to have an irradiation intensity of at least three stages (including the case of zero). Perform irradiation. Further, in the above-described embodiment, the ray intensity of the light beam of the pattern region 9 is set to be constant (irradiation intensity value = 55 (HEX)), but it is of course not limited thereto, and can be appropriately changed. For example, by measuring the film thickness of the photoresist layer rg of each portion in the pattern region 901, the light beam may be irradiated to a thicker portion with an irradiation intensity slightly larger than a portion having a thin film thickness. Thereby, the exposure treatment can be appropriately performed in accordance with the film thickness. Further, in the case where the range of the peripheral region 902 and the irradiation intensity of the light beam in the region are set to the same condition, the pattern region irradiation material 821 may be added in advance to generate irradiation information on the light beam of the peripheral region 9〇2. Further, in the above-described embodiment, the laser length measuring device 41 is used for the main scanning direction of the base plate 23, and 136984.doc -25 - 200941152 is the detection position, but it is of course not limited thereto. For example, the position of the base plate 23 can also be detected by an encoder provided on the linear motor 231a or the guide portion 231b. Further, in the above-described embodiment, the light beam is irradiated by the irradiation unit 33 while moving the moving plate group 2 in the main scanning direction, but the present invention is not limited to this. For example, the pattern drawing device may be configured by moving the irradiation unit 33 while fixing the moving plate group (i.e., fixing the substrate 90), thereby performing pattern drawing. Further, in the above embodiment, the relative position of the susceptor plate 23 and the irradiation unit 33 in the main scanning direction is described, but the present invention is not limited thereto. For example, the relative position of the sub-scanning direction can also be detected. In this case, the accuracy of the stroke in the sub-scanning direction can also be improved. Further, in the above-described embodiment, the light beam is irradiated onto the substrate 9A, but the beam is not limited thereto. For example, an electron beam, an ion beam, an X-ray, or the like may be used. In the above embodiment, although the substrate 90 for forming the positive photoresist layer RG is described, the present invention may also form a negative type in the exposure process. The substrate 90 of the sensor layer is suitable for use. Further, the respective configurations described in the above embodiment and each modification can be combined as appropriate without any contradiction. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a pattern drawing device according to a third embodiment of the present invention. Figure 2 is a bottom plan view showing the file drawing device. 136984.doc -26· 200941152 Fig. 3 is a perspective view showing the internal structure of the irradiation unit. Fig. 4 is a block diagram showing the connection between the respective portions of the pattern drawing device and the control portion. Fig. 5 is a view showing the position of each region in the main surface area of the substrate. The figure is a diagram showing the illumination data of the pattern area used for the pattern area drawing. Fig. 7 is a view showing the irradiation data of the peripheral region for the peripheral region drawing. Fig. 8 is a view showing synthetic data for drawing a substrate. Fig. 9 is a view showing the flow of the operation of the pattern drawing device. Fig. 1 is a view showing a state in which the substrate is moved to the movement start position. Fig. 11 is a view showing a principal surface (upper side) and a side surface (bottom) of a substrate on which a positive type photoresist layer is formed. [Description of main component symbols] 1 Pattern drawing device 2 Moving plate group 3 Illumination optical system 8 Control unit 10 Substrate holding plate 21 Substrate holding plate 33 Irradiation unit 41 Laser length measuring device 90 Substrate 221 Sub scanning mechanism 231 Main scanning mechanism 333 Projection Illumination optical system 136984.doc 200941152 811 Movement mechanism control unit 812 Irradiation control unit 813 Data synthesis unit 821 Pattern area illumination data 822 Peripheral area illumination data 824 Synthetic data - 900 Main surface area 901 Pattern area 902 Peripheral area 903 Recognition area RG light Resistive layer 136984.doc -28-