200939898 九、發明說明 【發明所屬之技術領域] 本發明是有關對液晶顯示裝置（LCD )等的平面直角 顯示器（Flat Panel Display ) ( FPD )製造用的玻璃基板 等的基板實施電漿蝕刻等的電漿處理之電感耦合電漿處理 裝置及電漿處理方法。 【先前技術】 在液晶顯示裝置（LCD)等的製造工程中，爲了對玻 璃基板實施所定的處理，而使用電漿蝕刻裝置或電漿CVD 成膜裝置等各種的電漿處理裝置。如此的電漿處理裝置， 以往大多是使用電容結合電漿處理裝置，但最近可在高真 空度下取得高密度的電漿之具有大的優點的電感耦合電漿 (Inductively Coupled Plasma: ICP)處理裝置受到注 目。 電感耦合電漿處理裝置是在收容被處理基板的處理容 器的電介體窗的外側配置高頻天線，對處理容器内供給處 理氣體，且對該高頻天線供給高頻電力，藉此使電感耦合 電漿產生於處理容器内，藉由此電感耦合電漿來對被處理 基板實施所定的電漿處理。電感耦合電漿處理裝置的高頻 天線，大多是使用形成平面狀的所定圖案之平面天線。 如此使用平面天線的電感耦合電漿處理裝置是在處理 容器内的平面天線正下方的空間產生電漿，但此時因爲是 與在天線正下方的各位置的電場強度成比例來具有高電漿 -5- 200939898 密度領域及低電漿領域的分布，所以平面天線的圖案形狀 爲決定電漿密度分布的重要因素。 可是’一台的電感耦合電漿處理裝置所應對應的用途 (application )非限於一個，需要對應於複數的用途。該 情況，爲了在各個的用途中進行均一的處理，需要使電獎 密度分布變化，爲此’以能夠使高密度領域及低密度領域 的位置有所不同的方式來準備複數個不同形狀的天線，對 應於用途來進行更換天線。 然而，對應於複數的用途來準備複數的天線，按不同 的用途來更換是非常需要多的勞力，且最近因爲LCD用 的玻璃基板顯著大型化，所以天線製造費用也成高價。 又，即使如此準備複數的天線，在所被賦予的用途中也未 必是最適條件，不得不藉由程式條件的調整來對應。 對於此，在專利文獻1中揭示有將渦巻形天線分割成 内側部份及外側部份的2個，而可流動各個獨立的高頻電 流之電漿處理裝置。若根據如此的構成，則可藉由調整供 給至内側部份的功率及供給至外側部份的功率來控制電漿 密度分布。 然而，記載於專利文獻1的技術是需要設置渦巻形天 線的内側部份用的高頻電源及外側部份用的高頻電源的2 個高頻電源，或設置電力分配電路，裝置會變大，裝置成 本會變高。並且，此情況電力損失大，電力成本變高，且 難以進行高精度的電漿密度分布控制。而且，就實際的蝕 刻處理而言，在1次的蝕刻處理中，有時會連續性地鈾刻 -6 - 200939898 複數個相異的膜，在如此的情況時，因爲最適程式條件會 依膜而有所不同，所以最好是在鈾刻處理的途中進行天線 的調整，但記載於上述專利文獻1的技術是無法對應的。 [專利文獻1]專利第3077009號公報 【發明內容】 (發明所欲解決的課題） @ 本發明是有鑑於上述情事而硏發者，其目的是在於提 供一種不會有提高裝置成本及電力成本的情況，可在電漿 處理的途中進行電漿狀態的控制之電感耦合電漿處理裝置 及電感耦合電漿處理方法。 (用以解決課題的手段） 爲了解決上述課題，本發明的第1觀點是在於提供一 種電感耦合電漿處理裝置，其特徵係具備： Q 處理室，其係收容被處理基板實施電漿處理； 載置台，其係於上述處理室内載置被處理基板； 處理氣體供給系，其係供給處理氣體至上述處理室 内； 排氣系，其係對上述處理室内進行排氣； 高頻天線，其係隔著電介體構件來配置於上述處理室 的外部，供給高頻電力，藉此在上述處理室内形成感應電 場； 電漿檢出手段，其係檢測出藉由上述感應電場來形成 200939898 於上述處理室内的電感耦合電漿的狀態； 調節手段’其係調節包含上述高頻天線的天線電路的 特性；及 控制手段，其係根據上述電漿檢出手段的電漿檢出資 訊來控制上述調節手段，控制電漿狀態。 在上述第1觀點中，上述高頻天線係具有複數的天線 部，其係藉由供給高頻電力在上述處理室内形成具有各相 異的電場強度分布之感應電場， 上述調節手段係連接至包含上述各天線部的天線電路 的其中至少一個，調節該被連接的天線電路的阻抗， 上述控制手段係控制上述調節手段，而控制上述複數 的天線部的電流値，藉此可控制形成於上述處理室内的電 感耦合電漿的電漿密度分布》 此情況，上述調節手段可爲具有可變電容器者。 又，上述控制手段係按各用途預先設定可取得最適的 電漿狀態之上述調節手段的調節參數，可根據上述電漿檢 出手段的檢出資訊來選擇對應於所實行的用途之調節參 數。 上述被處理基板係具有被積層的複數的層，上述電漿 處理係該等的層的蝕刻處理，上述控制手段係按各層來預 先設定可取得最適的電漿密度分布之上述調節手段的調節 參數，可根據上述電漿檢出手段的檢出資訊來選擇對應於 處理對象層的調節參數。 又，上述控制手段可根據上述電漿檢出手段的檢出資 -8 - 200939898 訊，以電漿狀態能夠形成適當的方式來即時（Real time ) 控制上述調節參數。 又，上述控制手段係除了根據上述電漿檢出手段的電 漿檢出資訊來控制上述調節手段以外，還可根據上述電漿 檢出手段的電漿檢出資訊來控制上述處理氣體供給系，控 制電漿狀態。 此情況，上述控制手段係按各用途預先設定可取得最 ^ 適的電漿密度分布之上述調節手段的調節參數及包含上述 處理氣體供給系的處理氣體流量、比率的處理氣體參數， 可根據上述電漿檢出手段的檢出資訊來選擇對應於所實行 的用途之調節參數及處理氣體參數。 具體而言，上述被處理基板係具有被積層的複數的 層，上述電漿處理爲該等的層的蝕刻處理時，按各層來預 先設定可取得最適的電漿密度分布之上述調節手段的調節 參數及包含上述處理氣體供給系的處理氣體流量、比率之 φ 處理氣體參數，上述控制手段可根據上述電漿檢出手段的 檢出資訊來選擇對應於所被掌握的層之調節參數及處理氣 體參數。 並且，連上述處理氣體供給系也控制時，上述控制手 段亦可根據上述電漿檢出手段的檢出資訊，以電漿狀態能 夠形成適當的方式來即時控制上述調節參數及包含上述處 理氣體供給系的處理氣體流量、比率之處理氣體參數。 或’上述控制手段係按各用途預先設定可取得最適的 電漿密度分布之上述調節手段的調節參數，根據上述電漿 -9- 200939898 檢出手段的檢出資訊，選擇對應於所實行的用途之調節參 數’且可根據上述電漿檢出手段的檢出資訊，以電漿狀態 能夠形成適當的方式來即時控制包含上述處理氣體供給系 的處理氣體流量、比率之處理氣體參數。 又，上述電漿檢出手段係對應於被處理基板的相異的 位置來設置複數個，上述控制手段係以上述複數的電漿檢 出手段的檢出資訊能夠形成一定的方式來控制上述調節手 段，而使電漿處理特性在被處理基板的面内能夠形成均 一，且可根據上述複數個電漿手段的檢出資訊的任一個來 控制上述處理氣體供給系，而控制電漿處理特性。 又，上述電漿檢出手段可適用具有接受來自電漿的發 光之受光部、及從受光器所接受的光來檢測出所定波長的 光的發光強度之光檢出部者。 此情況，上述光檢出部可爲檢測出所定波長的檢出光 及上述檢出光波長的附近的波長之參照光者，使用以上述 參照光的發光強度來規格化上述檢出光的發光強度之發光 強度作爲上述電感耦合電漿的狀態者。 本發明的第2觀點是在於提供一種電感耦合電漿處理 方法，係於設在處理室的内部的載置台上載置被處理基 板，在處理室的外部隔著電介體構件來設置一藉由供給高 頻電力在上述處理室内形成感應電場的高頻天線’對處理 室内供給處理氣體，且對上述高頻天線供給高頻電力，利 用藉此形成的感應電場在上述處理室内形成處理氣體的電 感耦合電漿，藉由該電漿來對被處理基板實施電漿處理之 -10- 200939898 電感耦合電漿處理方法，其特徵爲： 檢測出藉由上述感應電場來形成於上述處理室内的電 感耦合電漿的狀態，根據該檢出資訊來調節包含上述高頻 天線的天線電路的特性，控制電漿狀態。 在上述第2觀點中，上述高頻天線係具有複數的天線 部，其係藉由供給高頻電力在上述處理室内形成具有各相 異的電場強度分布之感應電場，可根據上述檢出資訊來調 ^ 節包含上述各天線部的天線電路的其中至少一個的阻抗， ❹ 控制上述複數的天線部的電流値，控制形成於上述處理室 内的電感耦合電漿的電漿密度分布。 此情況，上述阻抗的調節，可調節設於上述阻抗調整 的天線電路之可變電容器的電容。 又，可按各用途預先設定可取得最適的電漿狀態之天 線電路的調節參數，根據上述電感耦合電漿的狀態的檢出 資訊來選擇對應於所實行的用途之調節參數。上述被處理 φ 基板係具有被積層的複數的層，上述電漿處理爲該等的層 的蝕刻處理時，按各層來預先設定可取得最適的電漿密度 分布之上述調節手段的調節參數，可根據上述電感耦合電 漿的狀態的檢出資訊來選擇對應於處理對象層的調節參 數。 又，可根據上述電漿檢出手段的檢出資訊，以電槳狀 態能夠形成適當的方式來即時控制上述調節參數。 又’除了根據上述電感耦合電漿的檢出資訊來調節包 含上述高頻天線的天線電路的特性以外，還可根據上述電 -11 - 200939898 感耦合電漿的檢出資訊來控制上述處理氣體的供給，控制 電漿狀態。 此情況，可按各用途預先設定可取得最適的電漿狀態 之天線電路的調節參數及包含上述處理氣體流量、比率的 處理氣體參數，根據上述電感耦合電漿的狀態的檢出資訊 來選擇對應於所實行的用途之調節參數及處理氣體參數。 上述被處理基板係具有被積層的複數的層，上述電漿處理 爲該等的層的蝕刻處理時，按各層來預先設定可取得最適 的電漿密度分布之上述調節手段的調節參數及包含處理氣 體流量、比率的處理氣體參數，可根據上述電感耦合電漿 的狀態的檢出資訊來選擇對應於處理對象層的調節參數及 處理氣體參數。 並且，連上述處理氣體供給系也控制時，可根據上述 電漿檢出手段的檢出資訊，以電漿狀態能夠形成適當的方 式來即時控制上述調節參數及包含上述處理氣體供給系的 處理氣體流量、比率之處理氣體參數。 或，按各用途預先設定可取得最適的電漿密度分布之 上述調節手段的調節參數，根據上述電漿檢出手段的檢出 資訊，選擇對應於所實行的用途之調節參數’且可根據上 述電漿檢出手段的檢出資訊’以電漿狀態能夠形成適當的 方式來即時控制包含上述處理氣體供給系的處理氣體流 量、比率之處理氣體參數。 又，電感耦合電漿的狀態的檢出係對應於被處理基扳 的相異的位置在複數處進行’以該等檢出手段的檢出資訊 -12- 200939898 包含上述高頻天線的天線電路 在被處理基板的面内能夠形成 出資訊的任一個來控制上述處 處理特性。 的狀態的檢出，最好是藉由接 的光來檢測出所定波長的光的 出所定波長的檢出光及上述檢 照光，使用以上述參照光的發 的發光強度之發光強度作爲上 供一種記憶媒體，係記憶有在 電漿處理裝置的程式之記憶媒 g耦合電漿處理裝置控制於電 上述任一電感耦合電漿處理方 能夠形成一定的方式來控制 的特性，而使電漿處理特性 均一，且根據上述複數的檢 理氣體的供給，而控制電漿 又，上述電感耦合電漿 受來自電漿的光，從該接受 發光強度而進行者。 _ 此情況，較理想是檢測 ❿ 出光波長的附近的波長之參 光強度來規格化上述檢出光 述電感耦合電漿的狀態。 本發明的第3觀點係提 電腦上動作，控制電感耦合 體，其特徵爲： 上述程式係使上述電房 n 腦，而使在實行時能夠進行 法。 [發明的效果] 若根據本發明，則可藉 感應電場來形成於處理室内 電漿檢出手段的電漿檢出資 線的天線電路的特性之調節 要設置2個高頻電源或設置 由電漿檢出手段來檢測出利用 的電感耦合電漿的狀態，根據 訊來控制用以調節包含高頻天 手段，而控制電漿，所以不需 電力分配器，且可在電漿處理 -13- 200939898 的途中控制天線電路的特性。因此，不會有增加裝置成本 及電力成本的情況，可在電漿處理的途中進行電漿狀態的 控制。 【實施方式】 以下，參照圖面來說明有關本發明的實施形態。圖1 是表示本發明之一實施形態的電感耦合電漿處理裝置的剖 面圖，圖2是使用於該電感耦合電漿處理裝置的高頻天線 的平面圖。此裝置是使用於例如在FPD用玻璃基板上形成 薄膜電晶體時的金屬膜、ITO膜、氧化膜等的蝕刻、或阻 劑膜的灰化處理。在此，FPD例如可舉液晶顯示器 (LCD )、電致發光（Electro Luminescence ; EL )顯示 器、電漿顯示器面板（PDP)等。 此電漿處理裝置是具有角筒形狀的氣密本體容器1， 其係由導電性材料、例如内壁面爲被陽極氧化處理的鋁所 構成。此本體容器1是可分解地被組裝，藉由接地線la 來接地。本體容器1是藉由電介體壁2在上下區劃成天線 室3及處理室4。因此，電介體壁2是構成處理室4的頂 部壁。電介體壁2是以A1ID0□等的陶瓷、石英等所構成。 在電介體壁2的下側部份崁入處理氣體供給用的淋浴 頭框體11。淋浴頭框體11是設成十字狀，形成由下支持 電介體壁2的構造。另外，支持上述電介體壁2的淋浴頭 框體11是形成藉由複數根的吊帶（suspenders)(未圖 示）來吊起於本體容器1的頂部之狀態。 -14- 200939898 此淋浴頭框體11是導電性材料，最好是以金屬、例 如以汚染物不會產生的方式其内面被陽極氧化處理的鋁所 構成。在此淋浴頭框體11形成有延伸於水平的氣體流路 12，在此氣體流路12連通有往下方延伸的複數個氣體吐 出孔12a。另一方面，在電介體壁2的上面中央，以能夠 連通至該氣體流路12的方式設有氣體供給管20a。氣體供 給管2 0a是從本體容器1的頂部貫通至其外側，連接至包 A 含處理氣體供給源及閥系統等的處理氣體供給系20。因 〇 此，在電漿處理中，從處理氣體供給系20供給的處理氣 體會經由氣體供給管20a來供給至淋浴頭框體11内，從 其下面的氣體供給孔12a來吐出至處理室4内。 在本體容器1的天線室3的側壁3a與處理室4的側 壁4a之間設有突出於内側的支持棚5，在此支持棚5上載 置電介體壁2。 在天線室3内，於電介體壁2上，以能夠面向電介體 Q 壁2的方式配設有高頻（RF)天線13。此高頻天線13是 藉由絕緣構件所構成的間隔件1 7來隔離電介體壁2。高頻 天線1 3是具有：在外側部份綿密地配置天線線的外側天 線部1 3 a、及在内側部份綿密地配置天線線的内側天線部 13b。該等外側天線部13a及内側天線部13b是如圖2所 示構成渦卷狀的多重（四重）天線。另外，多重天線的構 成可爲内側外側皆二重的構成、或内側二重外側四重的構 成。 外側天線部13a是將4個的天線線各位移90°來使全 -15- 200939898 體能夠配置成大略矩形狀，其中央部是形成空間。並且， 往各天線線可經由中央的4個端子22a來給電。而且’各 天線線的外端部是爲了使天線線的電壓分布變化’而經由 電容器18a來連接至天線室3的側壁而被接地。但’亦可 不經由電容器18a來直接接地’且亦可在端子22a的部份 或天線線的途中，例如彎曲部l〇〇a***電容器。 並且，内側天線部13b是在外側天線部13a的中央部 的空間以4條的天線線能夠錯開各90°的位置來全體形成 大略矩形狀的方式配置。而且，往各天線線是形成可經由 中央的4個端子22 b來給電。另外，各天線線的外端部 是爲了使天線線的電壓分布變化而經由電容器18b (只 在圖2圖示）來連接至天線室3的上壁而被接地。但，亦 可不經由電容器18 b來直接接地，且亦可在端子22b的 部份或天線線的途中，例如在彎曲部l〇〇b***電容器。 而且，在内側天線部13b的最外側的天線線與外側天線部 1 3a的最内側的天線線之間形成大的空間。 在天線室3的中央部附近設有對外側天線部13a給電 的4根的第1給電構件16a及對内側天線部13b給電的4 根的第2給電構件16b (在圖1中皆只顯示1根），各 第1給電構件16a的下端是被連接至外側天線部13a的端 子22a，各第2給電構件16b的下端是被連接至内側天線 部13b的端子22b。在該等第1及第2給電構件16a及 16b是經由整合器14來連接高頻電源15。高頻電源15及 整合器14是被連接至給電線19，給電線19是在整合器 -16- 200939898 14的下游側分歧成給電線19a及19b，給電線19a會被連 接至4根的第1給電構件16a，給電線19b會被連接至4 根的第2給電構件16b。在給電線19a介在裝有可變電容 器21。因此，藉由此可變電容器21及外側天線部13a來 構成外側天線電路。另一方面，内側天線電路是僅以内側 天線部13b所構成。而且，藉由調節可變電容器21的電 容，如後述，外側天線電路的阻抗會被控制，可調整流至 外側天線電路及内側天線電路的電流的大小關係。 電漿處理中，從高頻電源15是供給感應電場形成用 之例如頻率爲13.56MHz的高頻電力至高頻天線13，藉由 如此被供給高頻電力的高頻天線13，在處理室4内形成感 應電場，利用此感應電場來使從淋浴頭框體11供給的處 理氣體電漿化。此時的電漿密度分布是藉由控制可變電容 器2 1的外側天線部1 3 a及内側天線部1 3 b的阻抗來控 制。 在處理室4内的下方，以能夠夾著電介體壁2來與高 頻天線13成對向的方式，設有用以載置 LCD玻璃基板G 的載置台23。載置台23是以導電性材料例如表面被陽極 氧化處理的鋁所構成。被載置於載置台23的LCD玻璃基 板G是藉由静電吸盤（未圖示）來吸附保持。 載置台23是被收納於絕緣體框24内，且被中空的支 柱25所支撐。支柱25是一邊維持氣密狀態一面貫通本體 容器1的底部，被配設於本體容器1外的昇降機構（未圖 示）所支撐，在基板G的搬出入時藉由昇降機構來使載置 -17- 200939898 台23驅動於上下方向。另外，在收納載置台23的絕緣體 框24與本體容器1的底部之間配設有氣密包圍支柱25的 波紋管26，藉此，即使載置台23上下作動還是可保證處 理容器4内的氣密性。並且，在處理室4的側壁4a設有 用以搬出入基板G的搬出入口 27a及予以開閉的閘閥 11。 在載置台23藉由設於中空的支柱25内的給電線25a 經由整合器28來連接高頻電源29。此高頻電源29是在電 漿處理中，將偏壓用的高頻電力，例如頻率爲3.2MHz的 高頻電力施加於載置台23。藉由此偏壓用的高頻電力，產 生於處理室4内的電漿中的離子會有效地被引入至基板 G。 而且，在載置台23内，爲了控制基板G的温度，而 設有由陶瓷加熱器等的加熱手段和冷媒流路等所構成的温 度控制機構、及温度感測器（皆未圖示）。對該等的機構 或構件的配管或配線皆是通過中空的支柱25來導出至本 體容器1外。 在處理室4的底部經由排氣管31來連接包含真空泵 等的排氣裝置30，藉由此排氣裝置30來對處理室4進行 排氣，在電漿處理中，使處理室4内設定、維持於所定的 真空環境（例如1.33Pa)。 在載置於載置台23的基板G的背面側形成有冷卻空 間（未圖示），設有用以供給He氣體（作爲一定壓力的 熱傳達用氣體）的He氣體流路33。藉由如此對基板G的 -18- 200939898 背面側供給熱傳達用氣體，可在真空下迴避基板G的温度 上昇或温度變化。 在對應於本體容器1的側壁的處理室4的部份設有由 玻璃等的透光性材料所構成的窗32。而且，設有經由此窗 32來檢測出處理室4内的電漿的發光狀態之電漿發光狀態 檢出部40。此電漿發光狀態檢出部40是具有：鄰接於窗 32來設置的受光器41、及連接至受光器41的分光器42、 _ 及連接至分光器42的光檢出器43。而且，在受光器41所 Ο 接受光的光是在分光器42被分光，其中特定波長的光的 發光強度會以光檢出器43來檢測出。藉此，可用受光器 41接受來自電漿的光，以分光器42分光，而藉由光檢出 器43來檢測出特定波長的光的發光強度，監視電漿的狀 態。例如，在進行電漿處理亦即使用氟碳化合物系氣體的 鈾刻時，例如可藉由檢測出C2的發光峰値來監視電漿的 狀態。此情況，對波長λΐ的檢出光而言，參照光爲使用 φ 檢出光的附近波長且峰値不存在的波長λ2的光，檢測出 檢出光波長λΐ的發光強度及參照光波長λ2的發光強度。 然後，利用以參照光波長λ2的發光強度除以檢出光波長 λΐ的發光強度而規格化的發光強度來監視電漿狀態。 此電漿處理裝置的各構成部是形成藉由控制部50來 控制的構成。控制部50是具有：由連接各構成部來控制 該等的電腦所構成的控制器51、及由操作員爲了管理電漿 處理裝置而進行指令的輸入操作等的鍵盤、或使電漿處理 裝置的運轉狀況可視化而顯示的顯示器等所構成的使用者 -19- 200939898 介面52、及儲存有用以藉控制器51的控制來實現在電漿 處理裝置所被實行的各種處理的控制程式、或用以對應於 處理條件來使處理實行於電漿處理裝置的各構成部的程式 亦即處方的記憶部5 3。處方是被記憶於記憶部5 2中的記 憶媒體。記憶媒體可爲硬碟那樣的固定者，或CDROΜ、 DVD、快閃記憶體等那樣的可搬性者。又，亦可由其他的 裝置例如經由專用線路來使處方適當傳送。然後，因應所 需，以來自使用者介面52的指示等，從記憶部53叫出任 意的處方，使實行於控制器5 1，在控制器5 1的控制下， 進行電漿處理裝置的所望處理。 其次，參照圖3的方塊圖來説明有關本實施形態的控 制系的主要部份。 在上述控制部50的控制器51連接進冇高頻天線13 的阻抗控制的可變電容器21、處理氣體供給系20、排氣 系30等的電漿處理裝置的構成部。並且，在控制器51連 接光檢出器43，以分光器42來分光在受光器41所接受之 來自電漿的光，其中特定波長的光的發光強度會在光檢出 器43被檢測出，其資料會被輸入至控制器5丨。例如使用 C2的峰値作爲檢出光來輸入其發光強度，且以其附近波長 作爲參照光輸入，在控制器51中的運算部中求取由該等 所被規格化的發光強度。然後，控制器51會根據該規格 化的發光強度的變化來輸出控制信號至可變電容器21，調 節其電容，如後述般可控制阻抗來控制電漿密度分布。 又’控制器51不僅如此還可根據上述規格化的發光 -20- 200939898 強度來至少控制處理氣體供給系20，控制處理氣體的流 量、流量比等的程式條件，而來控制電漿的狀態。在此程 式條件的控制中，控制參數亦可加上處理室4内的壓力， 此情況可根據規格化的發光強度來控制排氣裝置3 0，控制 處理室4内的壓力來控制電漿的狀態。 其次，說明有關高頻天線13的阻抗控制。圖4是表 示高頻天線13的給電電路。如此圖所示，來自高頻電源 0 1 5的高頻電力是經由整合器14來供給至外側天線電路 6 1 a及内側天線電路6 1 b。在此，外側天線電路6 1 a是以 外側天線部1 3 a及可變電容器2 1所構成，因此外側天線 電路61a的阻抗Zout可藉由調節可變電容器21的位置而 使其電容變化來變化。另一方面，内側天線電路61b是只 由内側天線部13b所構成，其阻抗Zin爲固定。此時，外 側天線電路61a的電流lout可使對應於阻抗Zout的變化 而變化。而且，内側天線電路61b的電流Iin是對應於 φ Zout與Zin的比率來變化。將此時的I〇ut及Iin的變化顯 示於圖5。如該圖所示，藉由可變電容器21的電容調節來 使Zout變化，可使外側天線電路61a的電流lout及内側 天線電路61b的電流Iin自由地變化。因此，可控制流至 外側天線部1 3 a的電流及流至内側天線部1 3 b的電流，藉 此可控制電漿密度分布。因此，本實施形態在進行電漿處 理時可使用電漿發光狀態檢出部40來檢測出電漿的發光 狀態的變化，根據此來控制可變電容器21的電容，進而 能夠控制最適的電漿狀態。 200939898 其次，說明有關使用以上那樣構成的電感耦合電漿鈾 刻裝置來對LCD玻璃基板G實施電漿蝕刻處理時的處理 動作。 首先，在開啓閘閥27的狀態下，從此藉由搬送機構 (未圖示）來將基板G搬入至處理室4内’在載置於載置 台23的載置面之後，藉由静電吸盤（未圖示）來將基板 G固定於載置台23上。其次，在處理室4内由處理氣體 供給系20來使處理氣體從淋浴頭框體11的氣體吐出孔 12a吐出至處理室4内，且利用排氣裝置30經由排氣管 31來對處理室4内進行真空排氣，藉此將處理室内例如維 持於0.66〜26· 6P a程度的壓力環境。並且，此時在基板G 的背面側的冷卻空間中，爲了迴避基板G的温度上昇或温 度變化，而經由He氣體流路3 3來供給作爲熱傳達用氣體 的He氣體。 其次，由高頻電源15來例如施加13.56MHz的高頻至 高頻天線13，藉此隔著電介體壁2在處理室4内形成均一 的感應電場。藉由如此形成的感應電場，在處理室4内使 處理氣體電漿化，產生高密度的電感耦合電漿。 在如此產生電感耦合電漿的狀態下，對LCD玻璃基 板G實施電漿處理、例如電漿蝕刻處理。·此電漿處理時， 在電漿鈾刻多層的積層構造時等，在1次的電漿處理之間 會有最適的電漿狀態變化的情況。因此，本實施形態中是 在電漿處理時，藉由電漿發光狀態檢出部40來即時檢測 出電漿發光狀態，根據其結果來調節高頻天線13的天線 -22- 200939898 電路的阻抗，控制電漿狀態。 亦即，高頻天線13是上述般爲具有：在外側部份密 集地配置天線線的外側天線部13a、及在内側部份密集地 配置天線線的内側天線部13b之構造，且在外側天線部 13a連接可變電容器21，因此可藉由調節可變電容器21 的位置來調節外側天線電路6 1 a的阻抗。因此，如圖5的 模式所示，可使外側天線電路6 1 a的電流lout及内側天線 I 電路61b的電流Iin自由地變化。亦即，藉由調節可變電 容器2 1的位置，可控制流至外側天線部1 3 a的電流及流 至内側天線部13b的電流。電感耦合電漿是在高頻天線13 正下方的空間產生電漿，但在該時的各位置的電漿密度是 與在各位置的電場強度成比例，因此藉由如此控制流至外 側天線部1 3 a的電流及流至内側天線部.1 3 b的電流，可控 制電漿密度分布。因此，可根據藉由電漿發光狀態檢出部 40所檢測出的電漿發光強度的變化來調節（控制）可變電 φ 容器2 1的位置，而控制電漿狀態。 例如，在電漿蝕刻多層的積層構造時，在層的交替處 等，例如依據C2的發光強度的變化來檢測出電漿的發光 狀態的變化，根據此來調整可變電容器21的位置，而可 控制成適合於新的層的電漿狀態，進行電漿處理。此情 況，將進行各層的蝕刻時的可變電容器的位置預先設定於 表格，可依據發光強度的變化來檢測出層的交替處，此時 根據上述表格來變更其位置。又，有時例如在層的途中需 要切換處方來變更電漿狀態。具體而言，爲了迴避過蝕 -23- 200939898 刻，在途中使蝕刻速度降低時等，例如可預先掌握該層的 蝕刻時間，在電漿發光狀態變化後經過所定時間後切換處 方。 又，亦可藉由電漿發光狀態檢出部40來檢測出電漿 的發光強度，由該檢出値來即時掌握電漿狀態，根據該檢 出資訊來隨時控制可變電容器21的位置，即時控制電漿 狀態。 又，亦可一邊視電漿的發光狀態一邊控制處理氣體的 流量或處理室内壓力等的程式條件，藉此來控制電漿狀 態。此情況的控制是可將設定處理氣體的流量或處理室内 的壓力等的程式條件之處方預先設定於表格，藉由檢測出 發光強度的變化來掌握處方的切換時間，或根據發光強度 的檢出値來即使掌握電漿狀態，根據此檢出資訊來隨時控 制處理氣體的流量或處理室内的壓力等的程式條件，即時 控制電漿狀態。 又，可變電容器21的位置控制是可將進行各層的蝕 刻時的可變電容器的位置預先設定於表格，依據發光強度 的變化來檢測出層的交替處時根據上述表格來進行，且處 理氣體的流量或處理室内壓力等的程式條件的控制是可根 據發光強度的檢出値來即時掌握電漿狀態，根據此檢出資 訊來即時進行。 如此根據可變電容器2 1的位置之阻抗控制或程式條 件的控制，並非限於在1次的蝕刻的途中變更電漿狀態 時，亦可適用於解除複數次重複蝕刻時的電漿狀態的歷時 -24- 200939898 變化。 可是，在如此監視電漿的特定波長的發光強度來檢測 出電漿狀態時，以往爲了排除各種的不安定要素，除了如 此的特定波長的發光強度以外，還會進行檢測出作爲參照 用的惰性氣體波長的發光強度，計算該等的商等來規格 化。200939898 IX. EMBODIMENT OF THE INVENTION [Technical Field] The present invention relates to a substrate such as a glass substrate for manufacturing a flat panel display (FPD) such as a liquid crystal display device (LCD), which is subjected to plasma etching or the like. Inductively coupled plasma processing device and plasma processing method for plasma processing. [Prior Art] In the manufacturing process of a liquid crystal display device (LCD) or the like, various plasma processing apparatuses such as a plasma etching apparatus or a plasma CVD film forming apparatus are used in order to perform a predetermined process on a glass substrate. In such a plasma processing apparatus, conventionally, a capacitor-coupled plasma processing apparatus has been used, but inductively coupled plasma (ICP) processing which has a large advantage in obtaining high-density plasma under high vacuum has recently been used. The device is noticed. In the inductively coupled plasma processing apparatus, a high frequency antenna is disposed outside the dielectric window of the processing container accommodating the substrate to be processed, a processing gas is supplied into the processing container, and high frequency power is supplied to the high frequency antenna, thereby making the inductance The coupled plasma is generated in the processing vessel, whereby the plasma treatment is performed on the substrate to be processed by inductively coupling the plasma. In the high-frequency antenna of the inductively coupled plasma processing apparatus, a planar antenna which forms a predetermined pattern in a planar shape is often used. The inductively coupled plasma processing apparatus using the planar antenna thus generates plasma in a space directly under the planar antenna in the processing container, but at this time, it has high plasma because it is proportional to the electric field strength at each position directly below the antenna. -5- 200939898 Distribution in the density field and low plasma area, so the pattern shape of the planar antenna is an important factor in determining the plasma density distribution. However, the application of the one type of inductively coupled plasma processing apparatus is not limited to one and needs to be used for a plurality of applications. In this case, in order to perform uniform processing for each application, it is necessary to change the density of the electric prize density, and to prepare a plurality of antennas of different shapes in such a manner that the positions in the high-density field and the low-density field can be different. Replace the antenna for the purpose. However, in order to prepare a plurality of antennas for a plurality of applications, it is very labor intensive to replace them for different purposes, and recently, since the glass substrate for LCDs has been significantly enlarged, the antenna manufacturing cost has become high. Further, even if a plurality of antennas are prepared in this way, it is not necessarily an optimum condition in the application to be provided, and it is necessary to respond by adjustment of the program conditions. In this regard, Patent Document 1 discloses a plasma processing apparatus that divides a vortex antenna into two inner and outer portions, and can flow independent high-frequency currents. According to such a configuration, the plasma density distribution can be controlled by adjusting the power supplied to the inner portion and the power supplied to the outer portion. However, the technique described in Patent Document 1 is to provide two high-frequency power sources for the high-frequency power source for the inner portion of the vortex antenna and the high-frequency power source for the outer portion, or to provide a power distribution circuit, and the device becomes large. The cost of the device will become higher. Further, in this case, power loss is large, power cost is high, and it is difficult to perform high-precision plasma density distribution control. Further, in the case of the actual etching treatment, in a single etching process, a plurality of different films may be continuously uranium-etched -6 - 200939898, in which case the optimum program conditions are determined by the film. However, it is preferable to adjust the antenna in the middle of the uranium engraving process, but the technique described in the above Patent Document 1 cannot be used. [Patent Document 1] Japanese Patent No. 30777009 [Disclosure] (Problems to be Solved by the Invention) @ The present invention has been made in view of the above circumstances, and an object thereof is to provide a device cost and power cost that are not improved. In the case of an inductively coupled plasma processing apparatus and an inductively coupled plasma processing method capable of controlling the plasma state on the way of plasma processing. In order to solve the above problems, a first aspect of the present invention provides an inductively coupled plasma processing apparatus, characterized in that: a Q processing chamber for storing a substrate to be processed for plasma treatment; a mounting table for placing a substrate to be processed in the processing chamber; a processing gas supply system for supplying a processing gas into the processing chamber; and an exhaust system for exhausting the processing chamber; and a high frequency antenna Arranging the high-frequency electric power outside the processing chamber via the dielectric member to generate an induced electric field in the processing chamber; and the plasma detecting means detecting the induced electric field to form 200939898 a state of the inductively coupled plasma in the processing chamber; an adjustment means 'which adjusts characteristics of the antenna circuit including the high frequency antenna; and a control means for controlling the adjustment based on the plasma detection information of the plasma detecting means Means to control the state of the plasma. In the first aspect, the radio-frequency antenna includes a plurality of antenna portions that form an induced electric field having a different electric field intensity distribution in the processing chamber by supplying high-frequency power, and the adjustment means is connected to the At least one of the antenna circuits of the antenna portions adjusts an impedance of the connected antenna circuit, and the control means controls the current means according to the control means to control the current 値 of the plurality of antenna portions, thereby being controllable in the processing Plasma density distribution of inductively coupled plasma in the room. In this case, the above adjustment means may be a variable capacitor. Further, the control means sets an adjustment parameter of the adjustment means for obtaining an optimum plasma state in advance for each use, and the adjustment parameter corresponding to the executed application can be selected based on the detection information of the plasma detection means. The substrate to be processed has a plurality of layers to be laminated, and the plasma treatment is an etching treatment of the layers. The control means sets the adjustment parameters of the adjustment means for obtaining an optimum plasma density distribution in advance for each layer. The adjustment parameter corresponding to the processing target layer can be selected based on the detection information of the plasma detecting means. Further, the control means may control the adjustment parameter in a timely manner in accordance with the detection state of the plasma detecting means, -8 - 200939898, in such a manner that the plasma state can be formed in an appropriate manner. Further, the control means may control the processing gas supply system based on the plasma detection information of the plasma detecting means, in addition to controlling the adjusting means based on the plasma detecting information of the plasma detecting means. Control the plasma state. In this case, the control means sets the adjustment parameter of the adjustment means for obtaining the optimum plasma density distribution and the processing gas parameter including the flow rate and ratio of the processing gas of the processing gas supply system in advance for each application. The detection information of the plasma detection means selects the adjustment parameters and the processing gas parameters corresponding to the used application. Specifically, the substrate to be processed has a plurality of layers to be laminated, and when the plasma treatment is an etching treatment of the layers, adjustment of the adjustment means for obtaining an optimum plasma density distribution is set in advance for each layer. The parameter and the φ process gas parameter including the process gas flow rate and the ratio of the process gas supply system, wherein the control means can select the adjustment parameter and the process gas corresponding to the layer to be grasped based on the detection information of the plasma detection means. parameter. Further, when the processing gas supply system is controlled, the control means may control the adjustment parameter and include the processing gas supply in an appropriate manner in a plasma state based on the detection information of the plasma detecting means. The process gas parameters of the process gas flow rate and ratio. Or the above-mentioned control means presets the adjustment parameters of the above-mentioned adjustment means for obtaining an optimum plasma density distribution for each use, and selects the corresponding information according to the detection information of the detection means of the plasma-9-200939898 According to the detection parameter of the plasma detecting means, the processing gas parameter including the flow rate and the ratio of the processing gas of the processing gas supply system can be instantly controlled in an appropriate manner in the plasma state. Further, the plasma detecting means is provided in plural depending on the different positions of the substrate to be processed, and the control means controls the adjustment by the detection information of the plurality of plasma detecting means. According to the method, the plasma processing characteristics can be uniform in the surface of the substrate to be processed, and the processing gas supply system can be controlled based on any of the detection information of the plurality of plasma means to control the plasma processing characteristics. Further, the plasma detecting means can be applied to a light detecting portion having a light receiving portion that receives the light receiving portion from the plasma and the light received from the light receiving device to detect the light emission intensity of the predetermined wavelength. In this case, the light detecting unit may be a reference light that detects the detection light of the predetermined wavelength and the wavelength of the wavelength near the wavelength of the detected light, and normalizes the light emission of the detected light by using the light emission intensity of the reference light. The intensity of the intensity of the light is used as the state of the inductively coupled plasma. A second aspect of the present invention provides an inductively coupled plasma processing method in which a substrate to be processed is placed on a mounting table provided inside a processing chamber, and a dielectric member is disposed outside the processing chamber. A high-frequency antenna that supplies high-frequency power to generate an induced electric field in the processing chamber supplies a processing gas to the processing chamber, and supplies high-frequency power to the high-frequency antenna, thereby forming an inductance of the processing gas in the processing chamber by the induced electric field formed thereby. a coupling plasma, a plasma processing method for plasma treatment of a substrate to be processed by the plasma - 200939898 inductively coupled plasma processing method, characterized by: detecting inductive coupling formed in the processing chamber by the induced electric field The state of the plasma adjusts the characteristics of the antenna circuit including the above-described high frequency antenna based on the detection information, and controls the plasma state. In the second aspect, the high-frequency antenna includes a plurality of antenna portions that form an induced electric field having a different electric field intensity distribution in the processing chamber by supplying high-frequency power, and can be based on the detection information. The adjustment includes an impedance of at least one of the antenna circuits of the antenna portions, and controls a current 値 of the plurality of antenna portions to control a plasma density distribution of the inductively coupled plasma formed in the processing chamber. In this case, the impedance can be adjusted to adjust the capacitance of the variable capacitor provided in the impedance-adjusted antenna circuit. Further, the adjustment parameters of the antenna circuit for obtaining an optimum plasma state can be set in advance for each application, and the adjustment parameters corresponding to the executed application can be selected based on the detection information of the state of the inductively coupled plasma. The φ substrate to be processed has a plurality of layers to be laminated, and when the plasma treatment is an etching treatment of the layers, the adjustment parameters of the adjustment means for obtaining an optimum plasma density distribution are set in advance for each layer. The adjustment parameter corresponding to the processing target layer is selected based on the detection information of the state of the inductively coupled plasma. Further, the adjustment parameter can be instantly controlled in an appropriate manner in the state of the electric paddle based on the detection information of the plasma detecting means. Further, in addition to adjusting the characteristics of the antenna circuit including the above-described high frequency antenna based on the detection information of the above-described inductively coupled plasma, the processing gas can be controlled according to the detection information of the above-mentioned electric -11 - 200939898 inductively coupled plasma. Supply, control plasma status. In this case, the adjustment parameters of the antenna circuit that can obtain the optimum plasma state and the processing gas parameters including the flow rate and ratio of the processing gas can be set in advance for each application, and the corresponding information can be selected based on the detection information of the state of the inductively coupled plasma. Adjustment parameters and process gas parameters for the purposes of the application. The substrate to be processed has a plurality of layers to be laminated, and when the plasma treatment is an etching treatment of the layers, adjustment parameters and processing including the adjustment means for obtaining an optimum plasma density distribution are set in advance for each layer. The processing gas parameter of the gas flow rate and the ratio may select an adjustment parameter and a processing gas parameter corresponding to the processing target layer based on the detection information of the state of the inductively coupled plasma. Further, when the processing gas supply system is controlled, the adjustment parameter and the processing gas including the processing gas supply system can be instantly controlled in an appropriate manner in accordance with the detection information of the plasma detecting means. Process gas parameters for flow rate and ratio. Or, according to each application, an adjustment parameter of the above-mentioned adjustment means for obtaining an optimum plasma density distribution is set in advance, and an adjustment parameter corresponding to the used application is selected according to the detection information of the plasma detection means, and The detection information of the plasma detecting means "in the plasma state, an appropriate manner can be formed to instantly control the processing gas parameters including the flow rate and ratio of the processing gas of the processing gas supply system. Further, the detection of the state of the inductively coupled plasma is performed at a plurality of locations corresponding to the different positions of the processed substrate, and the detection information of the detection means is used. - 200939898 The antenna circuit including the above-mentioned high frequency antenna Any of the information can be formed in the plane of the substrate to be processed to control the above-described processing characteristics. In the detection of the state, it is preferable that the detected light of the predetermined wavelength of the light of the predetermined wavelength and the detection light are detected by the received light, and the luminous intensity of the emission intensity of the reference light is used as the upper supply. A memory medium is a memory medium in which a plasma processing device of a plasma processing device is controlled by a plasma processing device controlled by any of the above inductively coupled plasma processes to be capable of forming a certain manner to control characteristics, and plasma processing is performed. The characteristics are uniform, and the plasma is controlled according to the supply of the plurality of test gases, and the inductively coupled plasma is subjected to light from the plasma to receive the intensity of the light. In this case, it is preferable to normalize the state of detecting the optically inductively coupled plasma by detecting the reference intensity of the wavelength near the wavelength of the pupil light. According to a third aspect of the present invention, an inductive coupling body is controlled to operate on a computer, and the program is configured to enable the electric house to be operated. [Effects of the Invention] According to the present invention, it is possible to adjust the characteristics of the antenna circuit of the plasma inspection and supply line formed by the plasma detecting means in the processing chamber by the induced electric field, and to set two high-frequency power sources or to be provided by the plasma. The detection means detects the state of the inductively coupled plasma used, according to the control to adjust the high frequency containing means, and controls the plasma, so no power distributor is needed, and can be processed in the plasma-13-200939898 Control the characteristics of the antenna circuit on the way. Therefore, there is no increase in device cost and power cost, and plasma state control can be performed on the way of plasma processing. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention, and Fig. 2 is a plan view showing a high frequency antenna used in the inductively coupled plasma processing apparatus. This device is used for etching a metal film, an ITO film, an oxide film, or the like, or an ashing treatment of a resist film, for example, when a thin film transistor is formed on a glass substrate for FPD. Here, the FPD may, for example, be a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP) or the like. This plasma processing apparatus is an airtight main body container 1 having a rectangular tube shape, which is made of a conductive material, for example, an inner wall surface made of anodized aluminum. The body container 1 is disassemblably assembled and grounded by a grounding wire la. The main body container 1 is divided into an antenna chamber 3 and a processing chamber 4 by the dielectric wall 2 in the upper and lower portions. Therefore, the dielectric wall 2 is the top wall constituting the processing chamber 4. The dielectric wall 2 is made of ceramic such as A1ID0□ or quartz. A shower head casing 11 for supplying a processing gas is injected into a lower portion of the dielectric wall 2. The shower head housing 11 is formed in a cross shape and has a structure in which the dielectric wall 2 is supported by the lower portion. Further, the shower head casing 11 supporting the above-described dielectric wall 2 is formed in a state in which it is suspended from the top of the main body container 1 by a plurality of suspenders (not shown). -14- 200939898 The shower head frame 11 is made of a conductive material, and is preferably made of metal, for example, aluminum whose inner surface is anodized so that contaminants do not occur. The shower head housing 11 is formed with a gas flow path 12 extending horizontally, and the gas flow path 12 communicates with a plurality of gas discharge holes 12a extending downward. On the other hand, a gas supply pipe 20a is provided at the center of the upper surface of the dielectric wall 2 so as to be able to communicate with the gas flow path 12. The gas supply pipe 20a penetrates from the top of the main body container 1 to the outside thereof, and is connected to the processing gas supply system 20 including the processing gas supply source, the valve system, and the like. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied into the shower head housing 11 via the gas supply tube 20a, and is discharged from the lower gas supply hole 12a to the processing chamber 4. Inside. Between the side wall 3a of the antenna chamber 3 of the main body container 1 and the side wall 4a of the processing chamber 4, a support shed 5 projecting inside is provided, and the support shed 5 is placed on the support shed 5. In the antenna chamber 3, a high frequency (RF) antenna 13 is disposed on the dielectric wall 2 so as to face the dielectric Q wall 2. This high-frequency antenna 13 isolating the dielectric wall 2 by a spacer 17 composed of an insulating member. The high-frequency antenna 13 has an outer antenna portion 13a that is disposed with the antenna line densely disposed on the outer portion, and an inner antenna portion 13b that is disposed with the antenna line densely disposed on the inner portion. The outer antenna portion 13a and the inner antenna portion 13b are multiplexed (quadruple) antennas that form a spiral shape as shown in Fig. 2 . Further, the configuration of the multiple antennas may be such that the inner side outer side is doubled or the inner side outer side quadruple. In the outer antenna portion 13a, the four antenna wires are each displaced by 90° so that the entire -15-200939898 body can be arranged in a substantially rectangular shape, and the central portion thereof is a forming space. Further, each antenna line can be powered via the four central terminals 22a. Further, the outer end portions of the antenna wires are connected to the side walls of the antenna room 3 via the capacitor 18a in order to change the voltage distribution of the antenna wires, and are grounded. However, it is also possible to directly ground the conductors without a capacitor 18a, and it is also possible to insert a capacitor in the middle of the terminal 22a or on the way of the antenna wire, for example, the bent portion 10a. Further, the inner antenna portion 13b is disposed in a space in the central portion of the outer antenna portion 13a so that the four antenna wires can be shifted by 90 degrees, and the entire antenna portion 13b is formed in a substantially rectangular shape. Further, each antenna line is formed to be electrically supplied via four terminals 22b at the center. Further, the outer end portion of each antenna wire is grounded via a capacitor 18b (illustrated only in Fig. 2) to the upper wall of the antenna chamber 3 in order to change the voltage distribution of the antenna wire. However, it is also possible to directly ground without the capacitor 18b, and it is also possible to insert a capacitor in the middle of the terminal 22b or on the way of the antenna line, for example, at the bent portion 10b. Further, a large space is formed between the outermost antenna line of the inner antenna portion 13b and the innermost antenna line of the outer antenna portion 13a. In the vicinity of the center portion of the antenna room 3, four first power feeding members 16a for supplying power to the outer antenna portion 13a and four second power feeding members 16b for powering the inner antenna portion 13b are provided (only one is shown in Fig. 1). The lower end of each of the first power feeding members 16a is a terminal 22a that is connected to the outer antenna portion 13a, and the lower end of each of the second power feeding members 16b is a terminal 22b that is connected to the inner antenna portion 13b. The first and second power feeding members 16a and 16b are connected to the high frequency power source 15 via the integrator 14. The high-frequency power source 15 and the integrator 14 are connected to the power supply line 19, and the power supply line 19 is branched into the electric wires 19a and 19b on the downstream side of the integrator-16-200939898, and the electric wire 19a is connected to the fourth. The power feeding member 16a and the power feeding line 19b are connected to the four second power transmitting members 16b. A variable capacitor 21 is interposed in the supply line 19a. Therefore, the outer antenna circuit is constituted by the variable capacitor 21 and the outer antenna portion 13a. On the other hand, the inner antenna circuit is constituted only by the inner antenna portion 13b. Further, by adjusting the capacitance of the variable capacitor 21, as will be described later, the impedance of the outer antenna circuit is controlled to be rectified to the magnitude relationship of the currents of the outer antenna circuit and the inner antenna circuit. In the plasma processing, the high frequency power source 15 is supplied with a source for generating an induced electric field, for example, a frequency of 13. The high-frequency power of 56 MHz is applied to the high-frequency antenna 13 to form an induced electric field in the processing chamber 4 by the high-frequency antenna 13 to which the high-frequency power is supplied, and the processing gas supplied from the shower head housing 11 is used by the induced electric field. Plasma. The plasma density distribution at this time is controlled by controlling the impedance of the outer antenna portion 13a and the inner antenna portion 13b of the variable capacitor 21. Below the inside of the processing chamber 4, a mounting table 23 on which the LCD glass substrate G is placed is provided so as to be opposed to the high-frequency antenna 13 with the dielectric wall 2 interposed therebetween. The mounting table 23 is made of a conductive material such as aluminum whose surface is anodized. The LCD glass substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown). The mounting table 23 is housed in the insulator frame 24 and supported by the hollow column 25. The support column 25 is supported by a lifting mechanism (not shown) disposed outside the main body container 1 while being kept in an airtight state, and is placed by the elevating mechanism at the time of loading and unloading of the substrate G. -17- 200939898 Table 23 is driven in the up and down direction. Further, a bellows 26 that hermetically surrounds the stay 25 is disposed between the insulator frame 24 that houses the mounting table 23 and the bottom of the main body container 1, whereby the gas in the processing container 4 can be secured even if the mounting table 23 is moved up and down. Confidentiality. Further, the side wall 4a of the processing chamber 4 is provided with a carry-out port 27a for carrying in and out of the substrate G, and a gate valve 11 for opening and closing. The high frequency power supply 29 is connected to the mounting table 23 via the integrator 28 via the power supply line 25a provided in the hollow pillar 25. This high-frequency power source 29 is a high-frequency power for biasing in plasma processing, for example, a frequency of 3. 2 MHz of high frequency power is applied to the stage 23. By the high frequency power for this biasing, ions generated in the plasma in the processing chamber 4 are efficiently introduced to the substrate G. Further, in the mounting table 23, in order to control the temperature of the substrate G, a temperature control mechanism including a heating means such as a ceramic heater, a refrigerant flow path, and the like, and a temperature sensor (not shown) are provided. The piping or wiring of the mechanisms or members is led out to the outside of the body container 1 through the hollow struts 25. An exhaust device 30 including a vacuum pump or the like is connected to the bottom of the processing chamber 4 via an exhaust pipe 31, whereby the processing chamber 4 is exhausted by the exhaust device 30, and the processing chamber 4 is set in the plasma processing. Maintain in a given vacuum environment (eg 1. 33Pa). A cooling space (not shown) is formed on the back side of the substrate G placed on the mounting table 23, and a He gas flow path 33 for supplying He gas (a gas for heat transfer at a constant pressure) is provided. By supplying the heat transfer gas to the back side of the substrate -18-200939898 in this manner, the temperature rise or the temperature change of the substrate G can be avoided under vacuum. A window 32 made of a light transmissive material such as glass is provided in a portion of the processing chamber 4 corresponding to the side wall of the main body container 1. Further, a plasma light-emitting state detecting portion 40 that detects the light-emitting state of the plasma in the processing chamber 4 via the window 32 is provided. The plasma light-emitting state detecting unit 40 includes a light receiver 41 provided adjacent to the window 32, a spectroscope 42 connected to the photoreceiver 41, and a photodetector 43 connected to the spectroscope 42. Further, the light received by the light receiver 41 is split by the spectroscope 42, and the light intensity of the light of a specific wavelength is detected by the photodetector 43. Thereby, the light from the plasma can be received by the photoreceptor 41, and the spectroscope 42 can be split, and the light intensity of the light of a specific wavelength can be detected by the photodetector 43, and the state of the plasma can be monitored. For example, in the case of plasma treatment, that is, uranium engraving using a fluorocarbon-based gas, for example, the state of the plasma can be monitored by detecting the luminescence peak of C2. In this case, for the detected light of the wavelength λ ,, the reference light is light having a wavelength λ2 in which the vicinity of the light is detected by φ and the peak 値 does not exist, and the light-emitting intensity of the detected light wavelength λ 及 and the reference light wavelength λ 2 are detected. Luminous intensity. Then, the plasma state is monitored by dividing the luminous intensity of the reference light wavelength λ2 by the luminous intensity of the detected light wavelength λ 而 and normalizing the luminous intensity. Each component of the plasma processing apparatus is configured to be controlled by the control unit 50. The control unit 50 includes a controller 51 including a computer that controls the respective components to control the computer, and a keyboard for inputting an instruction by the operator to manage the plasma processing device, or a plasma processing device. The user -19-200939898 interface 52 composed of a display or the like which is displayed by visualizing the operation state, and a control program for storing various processes executed by the plasma processing apparatus by the control of the controller 51, or The memory portion 53 which is a prescription which is a program which is applied to each component of the plasma processing apparatus in accordance with the processing conditions. The prescription is a memory medium that is memorized in the memory unit 52. The memory medium can be a fixed person such as a hard disk, or a portable person such as a CDRO, a DVD, or a flash memory. Further, the prescription may be appropriately transmitted by another device, for example, via a dedicated line. Then, if necessary, an arbitrary prescription is called from the memory unit 53 by an instruction from the user interface 52, and the controller 5 is executed under the control of the controller 51 to perform the plasma processing apparatus. deal with. Next, the main part of the control system according to the present embodiment will be described with reference to the block diagram of Fig. 3. The controller 51 of the control unit 50 is connected to a component of the plasma processing apparatus such as the variable capacitor 21 for impedance control of the high-frequency antenna 13, the processing gas supply system 20, and the exhaust system 30. Further, the controller 51 is connected to the photodetector 43 to split the light from the plasma received by the photoreceptor 41 by the spectroscope 42, wherein the luminous intensity of the light of a specific wavelength is detected at the photodetector 43. , its data will be input to the controller 5丨. For example, the peak intensity of C2 is used as the detected light to input the light-emission intensity, and the wavelength in the vicinity thereof is used as the reference light input, and the light-emitting intensity normalized by the controller is obtained by the calculation unit in the controller 51. Then, the controller 51 outputs a control signal to the variable capacitor 21 in accordance with the change in the normalized luminous intensity, and adjusts the capacitance thereof, and controls the impedance to control the plasma density distribution as will be described later. Further, the controller 51 can control the state of the plasma by controlling at least the processing gas supply system 20 based on the intensity of the normalized illuminating -20-200939898, controlling the flow rate of the processing gas, the flow rate ratio, and the like. In the control of the program condition, the control parameter can also be added to the pressure in the processing chamber 4, which can control the exhaust device 30 according to the normalized luminous intensity, and control the pressure in the processing chamber 4 to control the plasma. status. Next, the impedance control of the high frequency antenna 13 will be described. Fig. 4 is a power supply circuit showing the high frequency antenna 13. As shown in the figure, the high frequency power from the high frequency power source 0 15 is supplied to the outer antenna circuit 6 1 a and the inner antenna circuit 6 1 b via the integrator 14. Here, since the outer antenna circuit 61a is constituted by the outer antenna portion 13a and the variable capacitor 21, the impedance Zout of the outer antenna circuit 61a can be changed by adjusting the position of the variable capacitor 21 Variety. On the other hand, the inner antenna circuit 61b is constituted only by the inner antenna portion 13b, and its impedance Zin is fixed. At this time, the current lout of the external antenna circuit 61a can be changed corresponding to the change of the impedance Zout. Moreover, the current Iin of the inner antenna circuit 61b changes in accordance with the ratio of φ Zout to Zin. The changes of I〇ut and Iin at this time are shown in Fig. 5. As shown in the figure, Zout is changed by the capacitance adjustment of the variable capacitor 21, and the current lout of the outer antenna circuit 61a and the current Iin of the inner antenna circuit 61b can be freely changed. Therefore, the current flowing to the outer antenna portion 13a and the current flowing to the inner antenna portion 13b can be controlled, whereby the plasma density distribution can be controlled. Therefore, in the present embodiment, when the plasma processing is performed, the plasma light-emitting state detecting unit 40 can detect the change in the light-emitting state of the plasma, thereby controlling the capacitance of the variable capacitor 21 and controlling the optimum plasma. status. 200939898 Next, a description will be given of a processing operation when plasma etching processing is performed on the LCD glass substrate G by using the inductively coupled plasma uranium etching apparatus configured as described above. First, in a state where the gate valve 27 is opened, the substrate G is carried into the processing chamber 4 by a transport mechanism (not shown). After being placed on the mounting surface of the mounting table 23, the electrostatic chuck (by electrostatic chuck) The substrate G is fixed to the mounting table 23 (not shown). Next, in the processing chamber 4, the processing gas supply system 20 discharges the processing gas from the gas discharge hole 12a of the shower head housing 11 into the processing chamber 4, and the exhaust chamber 30 is used to treat the processing chamber via the exhaust pipe 31. 4 evacuated in the vacuum, thereby maintaining the processing chamber, for example, at 0. 66~26· 6P a degree of pressure environment. In the cooling space on the back side of the substrate G, He gas as a heat transfer gas is supplied through the He gas flow path 3 3 in order to avoid temperature rise or temperature change of the substrate G. Next, for example, a high frequency power source 15 is applied. A high frequency to high frequency antenna 13 of 56 MHz forms a uniform induced electric field in the processing chamber 4 via the dielectric wall 2. By the induced electric field thus formed, the processing gas is plasmatized in the processing chamber 4 to produce a high-density inductively coupled plasma. The LCD glass substrate G is subjected to a plasma treatment such as a plasma etching treatment in a state where the inductively coupled plasma is thus produced. In the plasma treatment, when the plasma uranium is engraved in a multi-layered structure, there is a case where an optimum plasma state changes between plasma treatments. Therefore, in the present embodiment, at the time of plasma processing, the plasma light-emitting state detecting unit 40 detects the plasma light-emitting state instantaneously, and adjusts the impedance of the antenna of the high-frequency antenna 13 from the antenna-22-200939898 according to the result. , control the state of the plasma. In other words, the high-frequency antenna 13 has a structure in which the outer antenna portion 13a in which the antenna wires are densely arranged on the outer portion and the inner antenna portion 13b in which the antenna wires are densely arranged on the inner portion is provided. The portion 13a is connected to the variable capacitor 21, so that the impedance of the outer antenna circuit 61a can be adjusted by adjusting the position of the variable capacitor 21. Therefore, as shown in the mode of Fig. 5, the current lout of the outer antenna circuit 61a and the current Iin of the inner antenna I circuit 61b can be freely changed. That is, by adjusting the position of the variable capacitor 21, the current flowing to the outer antenna portion 13a and the current flowing to the inner antenna portion 13b can be controlled. The inductively coupled plasma generates plasma in a space directly under the high frequency antenna 13, but the plasma density at each position at this time is proportional to the electric field strength at each position, and thus flows to the outer antenna portion by such control 1 3 a current and flow to the inner antenna section. A current of 1 3 b controls the plasma density distribution. Therefore, the position of the variable electric φ container 21 can be adjusted (controlled) based on the change in the luminous intensity of the plasma detected by the plasma light-emitting state detecting portion 40, and the plasma state can be controlled. For example, when the plasma is etched into a multi-layered laminated structure, the change in the light-emitting state of the plasma is detected at the alternating portion of the layers or the like, for example, according to the change in the light-emission intensity of C2, and the position of the variable capacitor 21 is adjusted accordingly. It can be controlled to be suitable for the plasma state of the new layer and subjected to plasma treatment. In this case, the position of the variable capacitor at the time of etching each layer is set in advance in a table, and the alternating portions of the layers can be detected in accordance with the change in the luminous intensity. At this time, the position is changed according to the above table. Further, for example, it is necessary to switch the prescription to change the plasma state in the middle of the layer. Specifically, in order to avoid the overetching -23-200939898, when the etching speed is lowered in the middle, for example, the etching time of the layer can be grasped in advance, and the predetermined time is elapsed after the plasma light-emitting state changes, and then the position is switched. Further, the plasma light-emitting state detecting unit 40 can detect the light-emission intensity of the plasma, and the plasma state can be immediately grasped by the detection port, and the position of the variable capacitor 21 can be controlled at any time based on the detection information. Instantly control the plasma state. Further, the plasma state can be controlled by controlling the flow rate of the processing gas or the processing chamber pressure depending on the state of light emission of the plasma. In this case, the program condition of setting the flow rate of the processing gas or the pressure in the processing chamber can be set in advance in the table, and the switching time of the prescription can be grasped by detecting the change in the luminous intensity, or the detection of the luminous intensity can be performed. In the meantime, even if the plasma state is grasped, the program conditions such as the flow rate of the processing gas or the pressure in the processing chamber can be controlled at any time based on the detection information, and the plasma state can be instantly controlled. Further, the position control of the variable capacitor 21 is such that the position of the variable capacitor when etching the respective layers can be set in advance in a table, and when the alternating portions of the layers are detected in accordance with the change in the luminous intensity, the processing is performed according to the above table. The control of the program conditions such as the flow rate or the processing chamber pressure allows the plasma state to be instantly grasped based on the detection of the luminous intensity, and the detection information is immediately performed based on the detected information. The impedance control or the program condition control according to the position of the variable capacitor 21 is not limited to the change of the plasma state in the middle of the etching, and may be applied to the discharge of the plasma state during the repeated etching. 24-200939898 Change. However, when the state of the plasma is detected by monitoring the intensity of the specific wavelength of the plasma, conventionally, in order to eliminate various unstable elements, in addition to the emission intensity of the specific wavelength, the inertness as the reference is detected. The luminous intensity of the gas wavelength is normalized by calculating the quotient of these.
然而，當電漿處理裝置的窗32因生成物等而被污染 時，當然透過率會降低，發光強度全體會降低，但全部的 波長的發光強度並非以一定的比例來變化，依波長其透過 率的降低程度會有所不同，依窗32的狀態，每個波長的 發光強度會大不同。因此，即使像以往那樣使用惰性氣體 波長的發光強度作爲參照用，規格化的發光強度的値還是 會依窗32的狀態而大不同。 例如，若電漿發光狀態檢出用爲使用<：2的發光強 度，參照光爲使用Ar等惰性氣體的發光強度來檢測出規 φ 格化的發光強度，則窗32在新品的狀態下是形成圖6 (a)所示，但進行100次電漿處理後的窗在污染的狀態 下是形成圖6(b)所示般大幅度降低。 於是，本實施形態是使用檢出光波長λΐ附近的波 長，即不具峰値的波長作爲參照光波長λ2，將以參照光波 長λ2的發光強度除以檢出光波長λΐ的發光強度的値作爲 規格化的發光強度。亦即，若爲檢出光波長λΐ附近的波 長，則即使窗32的透過率變化，其透過特性還是會與檢 出光波長幾乎相同，且因爲不具峰値，所以可高精度求取 -25- 200939898 規格化的發光強度。此情況，由以更高精度來求取規格化 的發光強度的觀點來看，較理想是使用檢出光波長λ2的 ±10nm的波長作爲參照光波長λ2。並且，此時的參照光波 長λ2的發光強度，較理想是檢出光波.長U的發光強度的 2 0 %以下。 例如，若使用C2作爲檢出光，使用其附近波長 (± 1 Onm以内）作爲參照光，而來檢測出以參照光的光強 度（C2的發光強度的15%)除以檢出光的光強度而規格化 的發光強度，則窗3 2在新品的狀態下是形成圖7 ( a )所 示，進行100次電漿處理後，窗32在污染的狀態下是形 成圖7(b)所示，可知即使窗32被污染，規格化的發光 強度幾乎不變化。 其次，實際按照本實施形態來顯示有關進行蝕刻處理 的結果。 在此是說明有關對具有圖8所示的TFT元件形成用的 積層構造的玻璃基板G實施電漿蝕刻處理時。圖8的玻璃 基板是在玻璃基體1〇丨上形成底塗層（Under coat)膜 102，在其上形成多晶矽膜1〇3’更形成成爲閘絕緣膜的 Si02膜104，且在其上形成成爲閘電極的金屬層之後，藉 由蝕刻來形成閘電極1 〇 5 ’然後在全面形成作爲層間絕緣 膜的SiNx膜106，更在其上形成作爲層間絕緣膜的Si02 膜 1 07。 將具有如此構造的玻璃基板G安裝於圖1的電漿處理 裝置，在此玻璃基板0的閘電極105的兩側部份依序蝕刻 -26- 200939898However, when the window 32 of the plasma processing apparatus is contaminated by the product or the like, the transmittance is naturally lowered, and the total luminous intensity is lowered. However, the luminous intensity of all the wavelengths does not change at a constant ratio, and the wavelength is transmitted through the wavelength. The degree of reduction in the rate will vary, and depending on the state of window 32, the intensity of illumination at each wavelength will vary greatly. Therefore, even if the luminous intensity of the inert gas wavelength is used as a reference as in the related art, the normalized luminous intensity 値 varies greatly depending on the state of the window 32. For example, when the plasma light-emitting state is detected using the light-emitting intensity of <:2, the reference light is detected by the light-emitting intensity of an inert gas such as Ar, and the window 32 is in a new state. Fig. 6(a) is shown, but the window after 100 times of plasma treatment is greatly reduced as shown in Fig. 6(b) in a state of contamination. Therefore, in the present embodiment, the wavelength near the wavelength λ 检 of the detected light, that is, the wavelength having no peak 作为 is used as the reference light wavelength λ2, and the illuminating intensity at the reference light wavelength λ2 is divided by the illuminating intensity at the detected light wavelength λ 値. Normalized luminous intensity. In other words, if the wavelength near the wavelength λ 光 is detected, even if the transmittance of the window 32 changes, the transmission characteristic is almost the same as the wavelength of the detected light, and since there is no peak, the accuracy can be accurately determined -25 - 200939898 Normalized luminous intensity. In this case, from the viewpoint of obtaining a normalized luminous intensity with higher precision, it is preferable to use a wavelength of ±10 nm of the detected light wavelength λ2 as the reference light wavelength λ2. Further, the light-emission intensity of the reference light wavelength λ2 at this time is preferably 20% or less of the light-emission intensity of the light beam. For example, when C2 is used as the detection light, and the nearby wavelength (±1 Onm) is used as the reference light, the light intensity of the reference light (15% of the luminous intensity of C2) is detected by dividing the light of the detected light. The strength and normalized luminous intensity, the window 32 is formed in the state of the new product as shown in Fig. 7 (a), and after 100 times of plasma treatment, the window 32 is formed in a state of contamination in Fig. 7(b). It can be seen that even if the window 32 is contaminated, the normalized luminous intensity hardly changes. Next, the result of performing the etching treatment is actually shown in accordance with this embodiment. Here, the case where the plasma etching treatment is performed on the glass substrate G having the laminated structure for forming the TFT element shown in Fig. 8 will be described. The glass substrate of FIG. 8 is formed with an undercoat film 102 on a glass substrate, on which a polysilicon film 1〇3' is formed to form a SiO2 film 104 which becomes a gate insulating film, and is formed thereon. After the metal layer of the gate electrode is formed, the gate electrode 1 〇 5 ' is formed by etching, and then the SiNx film 106 as an interlayer insulating film is entirely formed, and the SiO 2 film 107 as an interlayer insulating film is further formed thereon. The glass substrate G having such a configuration is mounted on the plasma processing apparatus of FIG. 1, and the both sides of the gate electrode 105 of the glass substrate 0 are sequentially etched -26-200939898
Si02 膜 107、SiNx 膜 106、Si02 膜 104、多晶矽膜 103， 而形成接觸孔108。 將蝕刻此時的Si〇2膜107、SiNx膜106、3102膜104 時之可變電容器21的位置及處方顯示於表1。如該表1所 示，在最初的Si02膜107的鈾刻時，處方爲使用第1處 方（氣體流量比SF6 : Ar=l : 9、壓力l.OPa、上下高頻 9kW/4kW)，且將可變電容器21的位置設爲40%來形成 電漿，藉此進行蝕刻，在SiNx膜106的蝕刻時，最初是 將處方維持於第1處方，且將可變電容器21的位置設爲 40%來進行蝕刻，途中將處方切換至第2處方（氣體流量 比 C4F8 : H2 : Ar=l : 1 : 3、壓力 1 .3Pa、上下高頻 5kW /5kW)，且將可變電容器21的位置設爲45%，而變更電 漿狀態來繼續蝕刻，在Si〇2膜104的蝕刻時，是將處方 維持於第 2處方，且將可變電容器21的位置變更成 8 5 %，藉此變更電獎狀態進行鈾刻。 [表1] 表格No. 處方 膜 電容器位置 1 第1處方 SiO2107 40% 2 第1處方 SiNxl06 40% 3 第2處方 SiNxl06 45% 4 第2處方 SiO2104 85% 將如此的刻處理時之電漿的發光強度顯示於圖 9。在此是使用CN的峰値波長的3 8 8nm作爲檢出光波 長。從第1處方往第2處方的變更及可變電容器21的位 -27- 200939898 置之往45%的變更是設定於從最初的發光強度的變化點 (從Si02膜107往SiNx膜106的交替處）起5秒後。並 且，在到達第2次的發光強度的變化點（從SiNx膜106 往Si02膜104的交替處）的時間點將可變電容器21的位 置變更成8 5 %。藉由如此進行蝕刻，可以良好的形狀來進 行蝕刻。另外，可變電容器21的位置0〜100 %是相當於 例如100〜5 OOpF的電容變化，藉由使可變電容器21的位 置變化，可使外側天線部13a與内側天線部13b的電流値 變化。例如，可爲：至可變電容器21的位置爲5 0 %爲 止，外側天線部1 3a的電流値要比内側天線部1 3b更大， 在50%幾乎相同，一旦超過50%，則相反的内側天線部 1 3b的電流値要比外側天線部1 3a更大之控制。 其次，說明有關使用根據檢出光波長λΐ及參照光波 長λ2的發光強度檢出手法來監視電漿狀態的實例。 針對10片的玻璃基板以同一處方來連續進行使用 C4H8氣體及Η2氣體的接觸孔蝕刻，監視該時的電漿狀 態。在此是使用C2的峰値波長作爲檢出光波長λΐ，使用 其附近波長作爲參照光波長λ2，而來檢測出以參照光的光 強度除以檢出光的光強度而規格化的發光強度。該時之規 格化的發光強度的歷時變化是形成圖10(a)所示般。一 般在使用氟碳化合物氣體來進行接觸孔蝕刻時，蝕刻特性 會隨裝置内的各種歷時變化而容易形成不安定，在此蝕刻 中也會有第5片以後發光強度變強的傾向。其次，求取各 基板的蝕刻速率及選擇比（Si02/poly-Si )的結果，如圖 200939898 10(b)所示，具體而言，因爲第1片的選擇比低，所以 底層膜消失，且在選擇比變高的第1〇片會發生因蝕刻停 止所造成的膜殘留。此圖10(b)所示的結果是與（a)的 監視結果幾乎對應，可確認電漿狀態的監視結果反映了實 際的電漿狀態。 其次，同様地進行使用C4H8氣體及H2氣體的接觸孔 蝕刻時，使用同樣的規格化的（：2的發光強度來監視電漿 狀態，以發光強度能夠形成一定的方式，即時控制C4H8 氣體及H2氣體的流量。該時的規格化的發光強度的歷時 變化是形成圖11 (a)所示，該時的各基板的蝕刻速率及 選擇比（Si02/poly-Si)是形成圖11 (b)所示，從第1片 到第10片爲止，不會有底層膜的削去或膜殘留的情況發 生，可維持安定的飩刻性能。由此可確認能夠根據上述電 漿狀態的監視結果來高精度控制蝕刻狀態。 其次，說明有關本發明的其他實施形態。 圖12是模式性地顯示本發明的其他實施形態的電感 耦合電漿處理裝置的水平剖面圖。在圖12中，對與圖1 相同者賦予同樣的符號，而省略説明。 此電漿處理裝置是在本體容器1的側壁之對應於處理 室4的部份設有玻璃等的透光性材料所構成的窗32a、 3 2b。窗32a是設在對應於載置台23上的玻璃基板G的中 心部的位置，窗32b是設在對應於邊緣部的位置。而且， 設有經由該等窗32a、32b來檢測出處理室4内的玻璃基 板G的中心部及邊緣部的電漿的發光狀態之電漿發光狀態 -29- 200939898 檢出部40a、40b。電漿發光狀態檢出部40a是具有：鄰接 於窗3 2a而設置的受光器41a、及連接至受光器41a的分 光器42a、及連接至分光器42a的光檢出器43a。同樣， 電漿發光狀態檢出部40b是具有：鄰接於窗32b而設置的 受光器41b、及連接至受光器41b的分光器42b、及連接 至分光器42b的光檢出器43b。然後，在受光器41a、41b 所受光的光是在分光器42a、42b被分光，其中特定波長 的光會以光檢出器43a、43b來檢測出。藉此，可以受光 器41a、41b來接受來自電漿的光，以分光器42 a、42b來 分光，而藉由光檢出器43a、43b來檢測出特定波長的光 的發光強度，監視電漿的狀態。具體而言，檢出光波長λΐ 的發光強度及參照光波長λ2的發光強度會被檢測出。 在光檢出器43a、43b所被檢測出的發光強度會被輸 入至控制部70，在控制部70的運算部71進行必要的運 算。具體而言，若將在光檢出器43 a所被檢測出的檢出光 的發光強度設爲λία，將參照光的發光強度設爲λ2α，將 在光檢出器43 b所被檢測出的檢出光的發光強度設爲 λΐΐ)，將參照光的發光強度設爲λ21»，則在邊緣部之規格化 的發光強度 Xlb/X2b、在中心部之規格化的發光強度 λ la/X2 a、及在邊緣部之規格化的發光強度與在中心部之規 格化的發光強度的比（λ11)/λ21) ) / ( λ1α/λ2α )會被運算。 並且，在控制部70的天線阻抗控制部72是以在運算部7 1 所被運算的（λ1ΐ5/λ21) ) / ( Xla/X2a )能夠形成一定的方式 來調整可變電容器21的位置，控制高頻天線13的任一天 -30- 200939898 線部的阻抗，而來控制電漿處理的面内均一性。而且’在 控制部70的氣體流量控制部73是以λ11)/λ21)或Xla/X2a 能夠形成一定的方式來調整氣體流量，以能夠歷時性地安 定成所定値的方式來控制飩刻速率或選擇比等的處理參 數。此情況，藉由交替或同時進行利用可變電容器21的 位置調整之天線阻抗控制、及氣體流量控制，將可確保如 此的電漿處理的面内均一性及蝕刻特性的安定性。 A 另外，上述實施形態是在100〜5 00pF的範圍使用可 變的電容器，但可藉由適當選擇接地於天線線外端的電容 器18a，18b的値，或在天線線途中***電容器時該電容 器的値，來變更對電漿密度分布控制有效的可變電容器的 可變範圍，例如在10〜2000 pF的範圍的一部份或全部的 領域只要是可變的電容器便可充分地適用。 其次，說明有關以控制中的電漿狀態能夠形成目標的 電漿狀暇之方式來控制調節參數或處理氣體參數的具體 ❹ 例。 爲了以控制中的電漿狀態能夠形成目標的電漿狀態之 方式進行控制，例如只要決定目標的發光強度（以下稱爲 目標發光強度），以控制對象之所被檢測出的發光強度 (以下稱爲控制發光強度）能夠追隨目標發光強度的方 式，隨時控制可變電容器的位置等的調節參數、處理氣體 的流量、比率及處理室内的壓力等的處理氣體參數即可。 隨時控制上述調節參數、處理氣體參數的方法，例如 可舉利用目標發光強度與控制發光強度的偏差之控制。在 -31 - 200939898 此所謂偏差是定義爲目標發光強度與控制發光強度的偏差 量（以目標發光強度除以目標發光強度與控制發光強度的 差者）。 (第1例） 利用上述偏差來控制處理氣體參數例如處理氣體的流 量時，有以所被控制的處理氣體的流量（以下稱爲反饋流 量）作爲偏差的一次函數控制的方法。圖13是表示一次 函數控制的一例。 圖13中的縱軸是反饋流量，横軸是偏差。此例是偏 差爲10%時，將反饋流量設爲3sccm。由於爲一次函數控 制，因此反饋流量是對偏差的大小成比例増加。 (第2例） 就一次函數控制而言，由於反饋流量對偏差量的比例 爲一定，因此爲了對於大的偏差迅速地進行反饋，而需要 增大設定一次函數的比例定數。然而，一旦增大設定比例 定數，則對於少的偏差而言，有可能形成必要以上大的反 饋流量。其結果，例如圖14所示，會有控制發光強度在 目標發光強度附近重複増減（追逐擺動（hunting)現象） 的情況發生。 第2例是爲了抑制上述那樣控制發光強度的追逐擺動 現象，而於偏差大時，增大反饋流量對偏差量的比例，在 偏差小時，縮少反饋流量對偏差量的比例之例。 · -32- 200939898 在第2例中，是將反饋流量設爲偏差的指數函數來控 制。圖1 5是表示指數函數控制的一例。 圖15中的縱軸是反饋流量，横軸是偏差。在此例中 也是偏差爲10°/。時，將反饋流量設爲3sccm。但，由於爲 指數函數控制，所以反饋流量是對偏差的大小成指數函數 地増加。 若如此利用指數函數控制，則與一次函數控制作比 ^ 較，當偏差大時，可擴大反饋流量對偏差量的比例，當偏 差小時，可縮小反饋流量對偏差量的比例。其結果，當偏 差大時，可使控制發光強度高速地追隨目標發光強度（高 速追隨），隨著控制發光強度接近目標發光強度，可慢慢 地調整控制發光強度而成爲目標發光強度（微調整追 隨）。藉此，如圖16所示，可抑止控制發光強度的追逐 擺動現象。 另外，本發明並非限於上述實施形態，亦可爲各種的 φ 變形。例如，上述實施形態是顯示將可變電容器連接至外 側天線部的例子，但並非限於此，如圖1 7所示，亦可在 内側天線部13b側設置可變電容器2Γ。此情況，藉由調 節可變電容器21'的位置來使其電容變化，可令内側天線 電路61b的阻抗Zin變化，藉此如圖18那樣可使外側天 線電路61a的電流lout、及内側天線電路61b的電流Iin 變化。 並且，高頻天線的構造並非限於上述構造，可採用具 有同様機能的其他各種圖案者。而且，上述實施形態是將 -33- 200939898 高頻天線分成在外側形成電漿的外側天線部及在内側形成 電漿的内側天線部，但並非一定要分成外側及内側，也可 採用各種的分法。又，並非限於形成電漿的位置相異的天 線部時，亦可分成電漿分布特性相異的天線部。又，上述 實施形態是顯示有關將高頻天線分成外側及内側的2個 時’但亦可分成3個以上。例如，可舉分成外側部份及中 央部份以及該等的中間部份的3個。 又’爲了調整阻抗，而設置可變電容器，但亦可爲可 變線圈等其他的阻抗調整手段。 又，有關電漿發光強度的檢出手法也非限於上述實施 形態’例如亦可取代使用分光器，而使用濾光器來檢測出 特定波長的發光強度。 又，利用目標發光強度與控制發光強度的偏差來控制 處理氣體的流量之方法也非限於一次函數控制或指數函數 控制，只要將縱軸設爲反饋量，將横軸設爲目標電漿狀態 與控制中電漿狀態的偏差量之偏差而圖表化時，像指數函 數曲線那樣以向下凸出的曲線來顯示偏差與反饋量的關係 者即可。向下凸出的曲線，例如可舉拋物線、雙曲線等的 曲線，指數函數以外，亦可使用描繪拋物線、雙曲線的函 數、或方程式來控制。 又，上述實施形態是舉例說明電漿處理爲電漿蝕刻處 理時，但並非限於此，亦可適用於灰化、或CVD成膜等 其他的電漿處理裝置。又，被處理基板爲使用FPD基板， 但本發明並非限於此，亦可適用於處理半導體晶圓等其他 -34- 200939898 的基板時。 另外，以上的電漿發光強度的檢出手法或處理氣體供 給系的控制手法並非限於電感耦合電漿處理裝置，亦可使 用於電容結合電漿處理裝置等的電漿處理裝置。 【圖式簡單說明】 圖1是表示本發明之一實施形態的電感耦合電漿處理 i 裝置的剖面圖。 圖2是表示使用於圖1的電感耦合電漿處理裝置的高 頻天線的平面圖。 圖3是表示本實施形態的控制系的主要部份的方塊 圖。 圖4是表示使用於圖1的電感耦合電漿處理裝置的高 頻天線的給電電路圖。 圖5是表示伴隨圖4的給電電路的阻抗變化之外側天 Q 線電路的電流lout及内側天線電路的電流Iin的變化圖。 圖6是表示參照光爲使用Ar的發光強度時，比較窗 未被污染時與被污染時所被檢測出的發光強度。 圖7是表示參照光爲使用檢出光附近的波長時，比較 窗未被污染時與被污染時所被檢測出的發光強度。 圖8是表示具有實際按照本發明的實施形態來進行電 漿蝕刻處理時使用的積層構造之玻璃基板的剖面圖。 圖9是表示電漿蝕刻圖8的積層構造時的電漿的發光 強度的圖表。 -35- 200939898 圖ι〇是表示使用以鄰接於檢出光的發光強度的波長 的參照光的發光強度來規格化檢出光的發光強度之發光強 度時的發光強度的歷時變化的實例及該時的蝕刻特性。 圖11是表示使用以鄰接於檢出光的發光強度的波長 的參照光的發光強度來規格化檢出光的發光強度之發光強 度時的發光強度的歷時變化的實例及該時的蝕刻特性。 圖12是表示本發明的其他實施形態的電感耦合電漿 處理裝置的模式水平剖面圖。 _ 圖13是表示一次函數控制的一例。 圖14是表示一次函數控制的結果。 圖1 5是表示指數函數控制的一例。 圖16是表示指數函數控制的結果。 圖17是表示高頻天線的給電電路的其他例。 圖18是表示伴隨圖17的給電電路的阻抗變化之外側 天線電路的電流lout及内側天線電路的電流Iin的變化 圖。 〇 【主要元件符號說明】 1 :本體容器 2:電介體壁（電介體構件） 3 :天線室 4 :處理室 1 3 :高頻天線 14 :整合器 -36- 200939898 1 5 :高頻電源 20 :處理氣體供給系 21:可變電容器（調整手段） 23 :載置台 3 0 :排氣裝置 32 :窗 40 :電漿發光狀態檢出部The SiO 2 film 107, the SiNx film 106, the SiO 2 film 104, and the polysilicon film 103 form a contact hole 108. Table 1 shows the positions and prescriptions of the variable capacitor 21 when the Si〇2 film 107, the SiNx film 106, and the 3102 film 104 are etched at this time. As shown in Table 1, in the uranium engraving of the first SiO 2 film 107, the first prescription was used (gas flow ratio SF6: Ar = 1:9, pressure l. OPa, upper and lower high frequency 9 kW / 4 kW), and When the position of the variable capacitor 21 is 40% to form a plasma, etching is performed. When the SiNx film 106 is etched, the prescription is first maintained in the first prescription, and the position of the variable capacitor 21 is set to 40. % is etched, and the prescription is switched to the second prescription (gas flow ratio C4F8: H2: Ar=l: 1:3, pressure 1. 3Pa, upper and lower frequency 5kW /5kW), and the position of the variable capacitor 21 is set. When it is set to 45%, the plasma state is changed to continue the etching. When the Si〇2 film 104 is etched, the prescription is maintained in the second prescription, and the position of the variable capacitor 21 is changed to 85 %. The state of the electric prize is uranium engraved [Table 1] Table No. Prescription film capacitor position 1 First prescription SiO2107 40% 2 First prescription SiNxl06 40% 3 Second prescription SiNxl06 45% 4 Second prescription SiO2104 85% Lightning of plasma during such engraving The intensity is shown in Figure 9. Here, 380 nm of the peak wavelength of CN is used as the detected light wavelength. The change from the first prescription to the second prescription and the change of the variable capacitor 21 to -27-200939898 to 45% are set at the change point from the first luminous intensity (alternating from the SiO 2 film 107 to the SiNx film 106) After 5 seconds. Further, the position of the variable capacitor 21 is changed to 85 % at the time point of the change in the second luminous intensity (alternating from the SiNx film 106 to the SiO 2 film 104). By etching in this way, etching can be performed in a good shape. Further, the position 0 to 100% of the variable capacitor 21 is a capacitance change corresponding to, for example, 100 to 510 pF, and the current 値 of the outer antenna portion 13a and the inner antenna portion 13b can be changed by changing the position of the variable capacitor 21. . For example, the current to the outer antenna portion 13a is larger than the inner antenna portion 13b, and the current is substantially the same at 50%, and once it exceeds 50%, the opposite is true. The current of the inner antenna portion 13b is larger than the control of the outer antenna portion 13a. Next, an example will be described in which the state of the plasma is monitored using the illuminance intensity detection method based on the detected light wavelength λ ΐ and the reference light wavelength λ 2 . With respect to ten glass substrates, contact hole etching using C4H8 gas and helium 2 gas was continuously performed in the same prescription, and the state of the plasma at that time was monitored. Here, the peak wavelength of C2 is used as the detected light wavelength λΐ, and the nearby wavelength is used as the reference light wavelength λ2, and the light intensity of the reference light is divided by the light intensity of the detected light to normalize the light-emitting intensity. . The temporal change in the normalized luminous intensity at this time is as shown in Fig. 10(a). When contact hole etching is generally performed using a fluorocarbon gas, etching characteristics tend to be unstable with various changes in the device, and there is a tendency that the illuminating intensity becomes stronger after the fifth film. Next, the etching rate and the selection ratio (SiO 2 /poly-Si ) of each substrate are obtained, as shown in FIG. 200939898 10 (b). Specifically, since the selection ratio of the first sheet is low, the underlying film disappears. Further, the film remaining due to the etch stop occurs when the first ruthenium having a higher specific ratio is selected. The result shown in Fig. 10(b) is almost in accordance with the monitoring result of (a), and it can be confirmed that the monitoring result of the plasma state reflects the actual plasma state. Next, when the contact hole etching using C4H8 gas and H2 gas is performed in the same manner, the same normalized (:2 luminous intensity is used to monitor the plasma state, and the luminous intensity can be formed in a certain manner, and the C4H8 gas and H2 can be instantly controlled. The flow rate of the gas. The temporal change of the normalized luminous intensity at this time is as shown in Fig. 11 (a), and the etching rate and the selection ratio (SiO 2 /poly-Si) of each substrate at this time are formed as Fig. 11 (b). As shown in the figure, from the first sheet to the tenth sheet, no peeling of the underlying film or film retention occurs, and stable engraving performance can be maintained. This confirms that the result of the monitoring of the plasma state can be confirmed. Fig. 12 is a horizontal cross-sectional view schematically showing an inductively coupled plasma processing apparatus according to another embodiment of the present invention. Fig. 12 is a cross-sectional view showing the etching state of the present invention. The same reference numerals will be given to the same reference numerals, and the description will be omitted. The plasma processing apparatus is provided with a window 32a made of a light-transmitting material such as glass in a portion of the side wall of the main body container 1 corresponding to the processing chamber 4. 3 2b. The window 32a is provided at a position corresponding to the center portion of the glass substrate G on the mounting table 23, and the window 32b is provided at a position corresponding to the edge portion. Further, the window 32b is provided to be detected via the windows 32a, 32b. The plasma light-emitting state of the light-emitting state of the plasma in the center portion and the edge portion of the glass substrate G in the processing chamber 4 is -29-200939898. The detecting portions 40a and 40b. The plasma light-emitting state detecting portion 40a has a window adjacent to the window. The photoreceiver 41a provided in the 3 2a, the spectroscope 42a connected to the photoreceiver 41a, and the photodetector 43a connected to the spectroscope 42a. Similarly, the plasma light-emitting state detecting portion 40b has a window 32b adjacent to the window 32b. The light receiver 41b and the spectroscope 42b connected to the photoreceiver 41b and the photodetector 43b connected to the spectroscope 42b are provided. Then, the light received by the photoreceptors 41a, 41b is in the spectroscopes 42a, 42b. The light is split, and light of a specific wavelength is detected by the light detectors 43a, 43b. Thereby, the light from the plasma can be received by the light receivers 41a, 41b, and the light splitters 42a, 42b are used to split the light, and the light is taken. The light intensity of light of a specific wavelength is detected by the light detectors 43a, 43b The state of the plasma is monitored. Specifically, the detected light intensity of the light wavelength λ 及 and the light intensity of the reference light wavelength λ 2 are detected. The detected light intensity of the light detectors 43 a and 43 b is input. To the control unit 70, the calculation unit 71 of the control unit 70 performs a necessary calculation. Specifically, when the light-emission intensity of the detected light detected by the photodetector 43a is λία, the reference light is used. The luminous intensity is λ2α, and the luminous intensity of the detected light detected by the photodetector 43b is λΐΐ), and the luminous intensity of the reference light is λ21», and the normalized illuminating at the edge portion is obtained. The intensity Xlb/X2b, the normalized luminous intensity λ la/X2 a at the center portion, and the ratio of the normalized luminous intensity at the edge portion to the normalized luminous intensity at the central portion (λ11) / λ21) / (λ1α/λ2α ) will be calculated. Further, the antenna impedance control unit 72 of the control unit 70 adjusts the position of the variable capacitor 21 so that the calculation unit 7 1 (λ1ΐ5/λ21)) / (Xla/X2a) can be formed in a constant manner, and controls the position. The impedance of the line portion of the HF antenna 13 on any day -30-200939898, to control the in-plane uniformity of the plasma treatment. Further, 'the gas flow rate control unit 73 of the control unit 70 can adjust the gas flow rate so that λ11)/λ21) or Xla/X2a can be formed in a constant manner, so that the etch rate can be controlled in such a manner that it can be stabilized in a predetermined manner. Select the processing parameters of the ratio. In this case, by performing the antenna impedance control using the position adjustment of the variable capacitor 21 or the gas flow rate control alternately or simultaneously, it is possible to ensure the in-plane uniformity of the plasma treatment and the stability of the etching characteristics. Further, in the above embodiment, a variable capacitor is used in the range of 100 to 500 pF, but the capacitor 18a, 18b which is grounded to the outer end of the antenna line can be appropriately selected, or the capacitor can be inserted when the capacitor is inserted in the middle of the antenna line. In other words, the variable range of the variable capacitor effective for controlling the plasma density distribution can be changed. For example, a part or all of the range of 10 to 2000 pF can be sufficiently applied as long as it is a variable capacitor. Next, a specific example of controlling the adjustment parameters or the processing gas parameters in such a manner that the plasma state of the plasma in the control can form a target can be described. In order to control the state of the plasma in which the target plasma state can be formed, for example, the target luminous intensity (hereinafter referred to as the target luminous intensity) is determined to control the detected luminous intensity of the object (hereinafter referred to as In order to control the luminous intensity), it is possible to control the processing parameters such as the adjustment parameter of the position of the variable capacitor, the flow rate of the processing gas, the ratio, and the pressure in the processing chamber at any time so as to follow the target luminous intensity. The method of controlling the above-mentioned adjustment parameters and processing gas parameters at any time may be, for example, control using the deviation between the target luminous intensity and the control luminous intensity. In -31 - 200939898, the so-called deviation is defined as the deviation between the target luminous intensity and the control luminous intensity (the difference between the target luminous intensity divided by the target luminous intensity and the controlled luminous intensity). (First example) When the process gas parameter, for example, the flow rate of the process gas, is controlled by the above-described variation, there is a method of controlling the flow rate of the process gas to be controlled (hereinafter referred to as feedback flow rate) as a linear function of the deviation. Fig. 13 is a diagram showing an example of the primary function control. The vertical axis in Fig. 13 is the feedback flow rate, and the horizontal axis is the deviation. In this case, when the deviation is 10%, the feedback flow rate is set to 3 sccm. Since it is controlled once, the feedback flow is proportional to the magnitude of the deviation. (Second example) In the case of the primary function control, since the ratio of the feedback flow rate to the deviation amount is constant, in order to quickly perform feedback for a large deviation, it is necessary to increase the proportional constant of the set primary function. However, once the set ratio is increased, it is possible to form a feedback flow which is larger than necessary for a small deviation. As a result, for example, as shown in Fig. 14, there is a case where the control luminous intensity is repeatedly reduced (seeking hunting phenomenon) in the vicinity of the target luminous intensity. In the second example, in order to suppress the chasing and swinging phenomenon of controlling the luminous intensity as described above, when the deviation is large, the ratio of the feedback flow rate to the deviation amount is increased, and when the deviation is small, the ratio of the feedback flow rate to the deviation amount is reduced. · -32- 200939898 In the second example, the feedback flow rate is set as an exponential function of the deviation to control. Fig. 15 is an example showing the control of the exponential function. The vertical axis in Fig. 15 is the feedback flow rate, and the horizontal axis is the deviation. In this case, the deviation is also 10°/. When the feedback flow is set to 3sccm. However, since it is controlled by an exponential function, the feedback flow is exponentially added to the magnitude of the deviation. If the exponential function control is used in this way, compared with the one-time function control, when the deviation is large, the ratio of the feedback flow to the deviation amount can be expanded, and when the deviation is small, the ratio of the feedback flow to the deviation amount can be reduced. As a result, when the deviation is large, the control illuminating intensity can follow the target illuminating intensity at high speed (high speed following), and as the control illuminating intensity approaches the target illuminating intensity, the control illuminating intensity can be gradually adjusted to become the target illuminating intensity (fine adjustment) follow). Thereby, as shown in Fig. 16, it is possible to suppress the chasing phenomenon of controlling the luminous intensity. Further, the present invention is not limited to the above embodiment, and various φ deformations are also possible. For example, although the above embodiment shows an example in which the variable capacitor is connected to the external antenna portion, the present invention is not limited thereto, and as shown in Fig. 17, a variable capacitor 2A may be provided on the side of the inner antenna portion 13b. In this case, by adjusting the position of the variable capacitor 21' to change its capacitance, the impedance Zin of the inner antenna circuit 61b can be changed, whereby the current lout of the outer antenna circuit 61a and the inner antenna circuit can be made as shown in FIG. The current Iin of 61b changes. Further, the configuration of the radio-frequency antenna is not limited to the above configuration, and various other patterns having the same function can be employed. Further, in the above embodiment, the high-frequency antenna of -33-200939898 is divided into an outer antenna portion in which plasma is formed on the outer side and an inner antenna portion in which plasma is formed on the inner side. However, it is not necessarily divided into the outer side and the inner side, and various points may be employed. law. Further, it is not limited to the antenna portion in which the positions of the plasmas are different, and may be divided into antenna portions having different plasma distribution characteristics. Further, in the above embodiment, the two antennas are divided into two outer and inner sides, but they may be divided into three or more. For example, it can be divided into an outer portion and a central portion, and three of the intermediate portions. Further, a variable capacitor is provided for adjusting the impedance, but other impedance adjusting means such as a variable coil may be used. Further, the detection method of the plasma luminous intensity is not limited to the above embodiment. For example, instead of using a spectroscope, a filter can be used to detect the luminous intensity at a specific wavelength. Further, the method of controlling the flow rate of the processing gas by using the deviation between the target luminous intensity and the control luminous intensity is not limited to the one-time function control or the exponential function control, and the vertical axis is set as the feedback amount, and the horizontal axis is set as the target plasma state and When the deviation of the deviation amount of the plasma state in the control is controlled, the relationship between the deviation and the feedback amount may be displayed by a downwardly convex curve like the exponential function curve. The curve that protrudes downward, for example, a curve such as a parabola or a hyperbola, or an exponential function, can also be controlled by a function of drawing a parabola, a hyperbola, or an equation. Further, in the above embodiment, the plasma treatment is exemplified as the plasma etching treatment. However, the present invention is not limited thereto, and may be applied to other plasma processing apparatuses such as ashing or CVD film formation. Further, the substrate to be processed is an FPD substrate, but the present invention is not limited thereto, and may be applied to other substrates of -34 to 200939898 such as semiconductor wafers. Further, the above-described detection method of the plasma luminous intensity or the control method of the processing gas supply system is not limited to the inductively coupled plasma processing apparatus, and may be used for a plasma processing apparatus in which a capacitor is combined with a plasma processing apparatus or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a plan view showing a high frequency antenna used in the inductively coupled plasma processing apparatus of Fig. 1. Fig. 3 is a block diagram showing the main part of the control system of the embodiment. Fig. 4 is a power supply circuit diagram showing a high frequency antenna used in the inductively coupled plasma processing apparatus of Fig. 1. Fig. 5 is a graph showing changes in current lout of the outer side Q-line circuit and current Iin of the inner antenna circuit in addition to the impedance change of the power supply circuit of Fig. 4; Fig. 6 is a view showing the illuminance intensity detected when the reference window is not contaminated and the case where the reference light is used when the illuminating intensity of Ar is used. Fig. 7 is a view showing the illuminating intensity detected when the reference window is at a wavelength near the detected light, when the comparison window is not contaminated and when it is contaminated. Fig. 8 is a cross-sectional view showing a glass substrate having a laminated structure used in actual plasma etching treatment according to an embodiment of the present invention. Fig. 9 is a graph showing the luminescence intensity of the plasma when the plasma is etched in the laminated structure of Fig. 8. -35-200939898 is an example of the temporal change of the luminous intensity when the luminous intensity of the luminous intensity of the detected light is normalized using the luminous intensity of the reference light adjacent to the wavelength of the luminous intensity of the detected light, and Etching characteristics. Fig. 11 is a view showing an example of the temporal change of the luminous intensity when the luminous intensity of the light emission intensity of the detected light is normalized by the light emission intensity of the reference light having a wavelength adjacent to the emission intensity of the detected light, and the etching characteristics at that time. Fig. 12 is a schematic horizontal cross-sectional view showing an inductively coupled plasma processing apparatus according to another embodiment of the present invention. FIG. 13 is a diagram showing an example of the primary function control. Fig. 14 is a diagram showing the result of the primary function control. Fig. 15 is an example showing the control of the exponential function. Fig. 16 is a diagram showing the result of the exponential function control. Fig. 17 is a view showing another example of the power feeding circuit of the radio-frequency antenna. Fig. 18 is a graph showing changes in the current lout of the antenna circuit and the current Iin of the inner antenna circuit in the outer side of the impedance change of the power supply circuit of Fig. 17. 〇【Main component symbol description】 1 : Main body container 2: Dielectric wall (dielectric member) 3 : Antenna room 4 : Processing chamber 1 3 : High frequency antenna 14 : Integrator -36- 200939898 1 5 : High frequency Power supply 20: Process gas supply system 21: Variable capacitor (adjustment means) 23: Mounting table 3 0: Exhaust device 32: Window 40: Plasma light-emitting state detecting portion
41 :受光器 42 :分光器 43 :光檢出器 5 0 :控制部 5 1 :控制器 52 :使用者介面 5 3 :記憶部 6 1 a :外側天線電路 6 1 b :内側天線電路 G :基板 -3741: light receiver 42: spectroscope 43: photodetector 50: control unit 5 1 : controller 52: user interface 5 3 : memory unit 6 1 a : outer antenna circuit 6 1 b : inner antenna circuit G: Substrate-37