TW200936953A - Structure of LED lens with reflective film - Google Patents

Structure of LED lens with reflective film Download PDF

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Publication number
TW200936953A
TW200936953A TW97107049A TW97107049A TW200936953A TW 200936953 A TW200936953 A TW 200936953A TW 97107049 A TW97107049 A TW 97107049A TW 97107049 A TW97107049 A TW 97107049A TW 200936953 A TW200936953 A TW 200936953A
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Taiwan
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reflective film
light
emitting diode
lens
diode lens
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TW97107049A
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Chinese (zh)
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Zhong-Hao Tian
Shun-Ting Xiao
Yan-Xing Lu
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Univ Nat Chiao Tung
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Priority to TW97107049A priority Critical patent/TW200936953A/en
Publication of TW200936953A publication Critical patent/TW200936953A/en

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Abstract

The present invention provides a structure of LED lens with reflective film, which includes: a first lens and a reflective film. The first lens has a first surface, a second surface, and a third surface, in which the second surface is extended from the edge of first surface, and the third surface is connected to the second surface and is so arranged to face the first surface. The reflective film is installed on the third surface. By controlling the light transmission rate of reflective film and the curvature of second or third surface, the structure of LED lens is able to produce various distributions of light field.

Description

200936953 〇4i>TV,'728i 九、發明說明: 【發明所屬之技術領域】 本發明係為一種具反射膜之發光二極體透鏡結構,特別為 一種應用於發光二極體封裝之具反射膜之發光二極體透鏡結 構。 【先前技術】 發光二極體是一種半導體元件,其具有體積小、壽命長、 ®耗電量低、反應速率快、耐震性特佳等優點。由於發光二極體 效能及其亮度不斷的在進步,除了已經取代過於耗電的白熾 燈、鹵素燈,並且在高亮度發光二極體問世後,就連螢光燈、 高壓氣體放電燈等也開始逐漸被取而代之。因此發光二極體從 過去只能用在電子裝置的狀態指示燈,進步到可應用於液晶顯 示器的背光模組,再擴展到電子照明及公眾顯示,如車用燈、 交通號誌燈、看板訊息跑馬燈、大型影視牆,甚至是投影機内 φ 的照明等,且其應用仍在持續延伸。 然而發光二極體為一種點光源,與傳統管狀燈泡所發出連 續且均勻分布之面光源有很大的不同,所以容易產生光場分布 不均勻等問題,如:局部區域之光強度過量或不足。有鑑於上 述問題,實際應用發光二極體時,多半會在發光二極體上加設 透鏡結構,藉以幫助改變發光二極體之出光角度,以達到所需 之光場分布。此外,由於光場分布不均勻會進一步導致物體顏 色失真,使得物體的原始色彩在實際照明時將無法真實呈現。 5 200936953 . , * 如中華民國新型專利申請案第295796號之「LED封裝結 構」中揭露了一種LED封裝結構,其包括:一基板;一紅光、 一綠光及一藍光發光半導體元件;以及複數個凹透鏡結構。每 一發光半導體元件上皆覆蓋有凹透鏡結構,藉由凹透鏡結構可 使知母一發光半導體元件之側向出光強度變大。 然而,上述前案中的凹透鏡結構只增加了發光二極體的側 向發光強度,並無法同時改善其他方向的發光強度。故,如何 ❹忐使得發光二極體各方向發光強度能得以被調控,將可増加光 場均勻度,並進一步改善上述缺點。 【發明内容】 為改善上述發光二極體光場分布不均勻之問題,本發明係 藉由反射膜之設置,以不同厚度設計之反射膜控制光通量與穿 透率,並配合第一透鏡,使得反射膜與第一透鏡之結構可調控 發光二極體之出光角度,進而達到發出各種形式光場分布之目 ❹的。 為達上述目的,本發明提供一種具反射膜之發光二極體透 鏡結構,其包括:一第一透鏡,其具有:一第一表面,其係為 平面,一弟一表面,其係由第一表面之邊緣延伸;以及一第 二表面,其係為一曲面,相接於第二表面並與該第一表面相對 6又置;以及一反射膜,設置於第三表面上。 藉由本發明的實施’至少可達到下列進步功效: 一、利用反射膜之厚度可調控光通量與反射量,進而產生各種 6 200936953 07ί1:'!ΛΠ) 形式之光場分布。 祕" 二、藉由反射膜之設置,使得發光二極體可發出強度連續且均 勻之光束。 為了使任何熟習相關技藝者了解本發明之技術内容並據 以實施,且根據本說明書所揭露之内容、中利_及胃 式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優 點,因此將在實施方式中詳細敘述本發明之詳細特徵以及優 點。 、* ❹ 【實施方式】 第1圖係為本發明之-種具反射膜之發光二極體透鏡結構 實施態樣一。第2圖係為一種使用銀金屬膜片之厚度與穿透率 /反射率關係圖。第3圖係為一種使用鋁金屬犋片之厚度與穿 透率/反射率關係圖。第4圖係為本發明之一種具反射膜之發 光二極體透鏡結構實施態樣二。第5圖係為本發明之一種具反 ❹射膜之發光二極體透鏡結構實施態樣三。第6圖係為本發明之 一種具反射膜之發光二極體透鏡結構實施態樣四。第7圖係為 ^头半球狀封裝結構之發光二極體光場分布圖。第8圖係為本 發月之種具反射膜之發光二極體透鏡結構應用光場分布圖 第9圖係為本發明之一種具反射膜之發光二極體透鏡結構 應用光場分布圖二》 如第1圖所示’本實施例係為一種具反射膜之發光二極體 透鏡結構實施態樣一,其包括:一第一透鏡1〇;以及一反射膜 7 200936953 20 ° 第一透鏡10,其具有·· 一第一表面11 ; 一第二表面12; 以及一第三表面13。第一透鏡10可以為任何導光性物質,且 其結構可以為一多邊型結構、一圓柱型結構、一球型結構、或 一非球型結構。第一透鏡10可用以調控發光二極體之出光角 度。 第一表面11,為第一透鏡10之底面,其可以為一平面, 當光線入射至第一表面11後,光線可自第一表面11入射至第 〇 一透鏡10。如第1圖所示,又第一表面11可進一步具有一凹 槽結構14,其係用以嵌入一發光二極體,並可固定發光二極體 之位置,以達到定位效果。 第二表面12,係由第一表面11之邊緣延伸。又第二表面 12可以為任何形式,如:多邊型、圓柱型、球型或非球型,其 功能為幫助調控側邊光束的折射以及反射角度。 第三表面13,係可以為一凹陷或凸起曲面,且第三表面 ❿ 13可以為一平滑曲面、一粗糖曲面、一球型曲面或一非球型曲 面…等。第三表面13相接於第二表面12,並與第一表面11 相對設置,即設置於第一表面11正上方處。當位於第一表面 11之發光二極體開啟時,光線將入射至第一表面11,且接著 入射至第二表面12及第三表面13。此時第三表面13之曲率設 計將可幫助調控入射反射膜20之光線入射與折射角度。 反射膜20,設置於第三表面13上,其係可以為一全反射 膜、一半穿透半反射膜、一半穿透半反射光學膜片、一多層光 8 200936953 學膜片或一金屬膜片…等。反射膜2 n批“丄ώ 川係用以調控被第三表面 光線核反伽2G之料,而雛發光二極 體之光通讀穿透率,如㈣厚度之金相片,會對光線產生 不同穿透率/反射率。再配合透鏡料,將使得具反射膜之發 光二極體透鏡結構能呈現各種形式光場分布。 反射膜20可以為-金屬膜片,如:銀金屬膜片、銘金屬 膜片…等’且可以為均-厚度或是非等厚度。如第2圖所示, 銀金屬膜片厚度約為Η奈求時,穿透率/反射率大約相等而 當銀金屬膜片厚度大於40奈米時,則幾乎已呈現全反射的狀 態。又如第3圖所示,鋁金屬膜片厚度約為7奈米時,穿透率 /反射率大約相等,而當鋁金屬膜片厚度大於2〇奈米時,也同 樣幾乎已呈現全反射的狀態。依據上述金屬膜片特性,可依照 不同厚度设计出各種穿透率/反射率金屬膜片。 由於金屬膜片之穿透率/反射率會隨金屬膜片種類及厚度 而變化,故可藉由不同金屬膜片與不同厚度,如金屬膜片中央 ❹之厚度小於兩側之厚度設計,使得中央與兩侧具不同之穿透率 /反射率’藉以調控發光二極體之光通量與穿透率。 上述之具反射膜之發光二極體透鏡結構,其可進一步於反 射膜20上設置一第二透鏡30、一螢光粉層40或一螢光粉層 40及一第三透鏡50 ’相關實施例說明如下: 如第4圖所示,本實施例係為一種具反射膜之發光二極體 透鏡結構實施態樣一 ’其係進一步具有一第二透鏡3 0。第二透 鏡30具有一第四表面31及一第五表面32,其中第四表面31 200936953 係藉由光學膠與反射膜20貼合,而第五表面32則與反射膜2〇 之端部及第二表面U形成一連續曲面。 第二透鏡30之材質可以為一導光物質,與第—透鏡相 同或是不相同之導光物質,並且其可以配合第一透鏡1〇設計 為多邊型結構、圓柱型結構、球型結構、或非球型結構,用以 調控由反射膜20出光之光場分布。 如第5圖所示,本實施例係為一種具反射膜之發光二極體 ❹透鏡結構實施態樣三,其係進一步具有一螢光粉層4〇,内含螢 光粉且設置於反射膜20上。螢光粉用以調整發光二極體之顏 色與色溫,不同比例之螢光粉所調配出來的顏色會有些許的不 同,這樣混色的技巧決定了顏色的細腻度,以及白光所呈現出 的亮度。 如第6圖所示,本實施例係為一種具反射膜之發光二極體 透鏡結構實施態樣四,其係進一步具有一螢光粉層4〇;以及一 第三透鏡50。螢光粉層40,設置於反射膜2〇上,不同比例螢 〇光粉決疋具反射膜之發光二極體透鏡出光顏色,且螢光粉混色 技巧將決定了顏色的豐富度。 第三透鏡50,其具有一第六表面51及—第七表面52,其 中第六表面51係與螢光粉層40貼合,而第七表面52則與反 射膜20之端部及第二表面12形成一連續曲面。第三透鏡5〇 之材質可以與第一透鏡10相同或是不相同之導光物質,並且 可以配合第一透鏡10設計為多邊型結構、圓柱型結構、球型 結構、或非球型結構,第三透鏡50設置之目的為幫助調控透 200936953 過反射膜20折射且經過螢光粉層4〇出光之光場分布。 習知半球狀發光二極體封裝,若發光二極體發出之光為朗 伯漫(lambertian)分布,則封裝後之發光二極體光場分佈如 ㈣所示,同樣也是呈現朗伯漫分布。但藉由具反射膜之發 光二極體透鏡結構實施態樣二’其中第—透鏡ig、第二透鏡 50與反射膜20冑為球型結構,並難反_ 2Q厚度,則可改 變發光二極體光場分佈。如第2圖所示,若使用銀金屬膜片, ❹ ❹ 並控制膜厚大於40奈米,且再依不.射肖度驢,使得每 -處之入射光穿透係數皆為(U ’即可得f|j如第8圖所示之應 用光場分布®-,其為在視A 6〇度時有最幼對發光強产^ 侧向光場分布。 如第3圖所示,還可以藉由使用銘金屬膜片將光穿透 調整為0.5,並控制鋁金屬膜厚介於6至8奈米,再依不同 射角度做調整’使得每-處之人射光穿透係數皆為Q 5, 得到如第9圖所示之應用光場分布圖二,其為強度均勻之、θ 分布。 &二之光場 惟上述各實施例係用以說明本發明之特點,其目的在使熟 習該技術者能瞭解本發明之内容並據以實施,而非限定本發明' 之專利範圍,故凡其他未脫離本發明所揭示之精神而完成^等 效修飾或修改,仍應包含在以下所述之申請專利範圍中。 【圖式簡單說明】 第1圖係為本發明之一種具反射膜之發光二極體透鏡結構實施 11 200936953 聊 ί編m: 態樣一。 第2圖係為一種使用銀金屬膜片之厚度與穿透率/反射率關係 圖。 第3圖係為一種使用鋁金屬膜片之厚度與穿透率/反射率關係 圖。 第4圖係為本發明之一種具反射膜之發光二極體透鏡結構實施 態樣二。 第5圖係為本發明之一種具反射膜之發光二極體透鏡結構實施 ®態樣三。 第6圖係為本發明之一種具反射膜之發光二極體透鏡結構實施 態樣四。 第7圖係為習知半球狀封裝結構之發光二極體光場分布圖。 第8圖係為本發明之一種具反射膜之發光二極體透鏡結構應用 光場分布圖一。 第9圖係為本發明之一種具反射膜之發光二極體透鏡結構應用 ❿光場分布圖二。 【主要元件符號說明】 10 ........第一透鏡 11 ........第一表面 12 ........第二表面 13 ........第三表面 14 ........凹槽結構 12 200936953 20........反射膜 30 ........第二透鏡 31 ........第四表面 32 ........第五表面 40........螢光粉層 50 ........第三透鏡 51 ........第六表面 52 ........第七表面 ❹200936953 〇4i>TV, '728i IX. Description of the Invention: [Technical Field] The present invention is a light-emitting diode lens structure with a reflective film, in particular, a reflective film for use in a light-emitting diode package Light-emitting diode lens structure. [Prior Art] A light-emitting diode is a semiconductor element which has the advantages of small volume, long life, low power consumption, fast reaction rate, and excellent shock resistance. As the efficiency and brightness of the LEDs continue to improve, in addition to replacing incandescent lamps and halogen lamps that are too power-hungry, and after the introduction of high-brightness LEDs, even fluorescent lamps, high-pressure gas discharge lamps, etc. It began to gradually be replaced. Therefore, the light-emitting diode can only be used in the status indicator of the electronic device in the past, and can be applied to the backlight module applicable to the liquid crystal display, and then extended to electronic lighting and public display, such as car lights, traffic lights, billboards. Message marquees, large video walls, and even φ lighting in projectors, and their applications continue to extend. However, the light-emitting diode is a kind of point light source, which is very different from the continuous and evenly distributed surface light source emitted by the conventional tubular light bulb, so it is easy to cause problems such as uneven light field distribution, such as excessive or insufficient light intensity in a local area. . In view of the above problems, when a light-emitting diode is actually applied, a lens structure is often added to the light-emitting diode to help change the light-emitting angle of the light-emitting diode to achieve a desired light field distribution. In addition, due to the uneven distribution of the light field, the color of the object is further distorted, so that the original color of the object will not be realistically displayed during actual illumination. 5 200936953 . , * The "LED package structure" of the Republic of China New Patent Application No. 295796 discloses an LED package structure comprising: a substrate; a red light, a green light and a blue light emitting semiconductor component; A plurality of concave lens structures. Each of the light-emitting semiconductor elements is covered with a concave lens structure, and the lateral light-emitting intensity of the light-emitting semiconductor element can be increased by the concave lens structure. However, the concave lens structure in the above case only increases the lateral luminous intensity of the light-emitting diode, and cannot simultaneously improve the luminous intensity in other directions. Therefore, how to make the luminous intensity of the light-emitting diodes in all directions can be adjusted, and the uniformity of the light field can be added, and the above disadvantages are further improved. SUMMARY OF THE INVENTION In order to improve the problem of uneven distribution of the light field of the light-emitting diode, the present invention controls the light flux and the transmittance by using a reflective film designed with different thicknesses by the arrangement of the reflective film, and is matched with the first lens. The structure of the reflective film and the first lens can adjust the light-emitting angle of the light-emitting diode, thereby achieving the purpose of emitting various forms of light field distribution. In order to achieve the above object, the present invention provides a light-emitting diode lens structure having a reflective film, comprising: a first lens having: a first surface, which is a flat surface, and a surface of the first An edge of the surface extends; and a second surface is a curved surface that is connected to the second surface and is disposed opposite to the first surface; and a reflective film is disposed on the third surface. At least the following advancements can be achieved by the implementation of the present invention: 1. The thickness of the reflective film can be used to adjust the luminous flux and the amount of reflection, thereby producing a variety of light field distributions in the form of 200936953 07ί1: '!ΛΠ. Secret 2. The second step of the reflective film allows the light-emitting diode to emit a continuous and uniform beam of intensity. In order to make the technical content of the present invention known to those skilled in the art and to implement it, and according to the content disclosed in the specification, the Chinese and the stomach, any person skilled in the art can easily understand the related objects and advantages of the present invention. The detailed features and advantages of the present invention will be described in detail in the embodiments. [Embodiment] FIG. 1 is a first embodiment of a light-emitting diode lens structure having a reflective film of the present invention. Figure 2 is a graph showing the relationship between thickness and transmittance/reflectance using a silver metal diaphragm. Figure 3 is a graph showing the relationship between thickness and penetration/reflectance using an aluminum metal tantalum. Fig. 4 is a second embodiment of a light-emitting diode lens structure with a reflective film of the present invention. Fig. 5 is a third embodiment of a light-emitting diode lens structure with a reverse-reflection film according to the present invention. Fig. 6 is a fourth embodiment of a light-emitting diode lens structure with a reflective film according to the present invention. Figure 7 is a light field distribution diagram of the light-emitting diode of the head hemispherical package structure. 8 is a light field distribution diagram of a light-emitting diode lens structure with a reflective film according to the present month. FIG. 9 is a light field distribution diagram of a light-emitting diode lens structure with a reflective film according to the present invention. As shown in FIG. 1 , the present embodiment is an embodiment of a light-emitting diode lens structure having a reflective film, comprising: a first lens 1 〇; and a reflective film 7 200936953 20 ° first lens 10, having a first surface 11; a second surface 12; and a third surface 13. The first lens 10 may be any light guiding substance, and its structure may be a polygonal structure, a cylindrical structure, a spherical structure, or an aspherical structure. The first lens 10 can be used to regulate the exit angle of the light-emitting diode. The first surface 11 is a bottom surface of the first lens 10, which may be a plane. When light is incident on the first surface 11, light may be incident from the first surface 11 to the first lens 10. As shown in Fig. 1, the first surface 11 further has a recessed structure 14 for embedding a light-emitting diode and fixing the position of the light-emitting diode to achieve a positioning effect. The second surface 12 extends from the edge of the first surface 11. The second surface 12 can be in any form, such as a polygonal, cylindrical, spherical or aspherical shape, which functions to help regulate the refraction of the side beams and the angle of reflection. The third surface 13 may be a concave or convex curved surface, and the third surface ❿ 13 may be a smooth curved surface, a coarse sugar curved surface, a spherical curved surface or an aspherical curved surface, or the like. The third surface 13 is in contact with the second surface 12 and is disposed opposite to the first surface 11 , that is, disposed directly above the first surface 11 . When the light emitting diodes on the first surface 11 are turned on, light rays are incident on the first surface 11 and then incident on the second surface 12 and the third surface 13. The curvature of the third surface 13 at this point will help to modulate the angle of incidence and refraction of the incident reflective film 20. The reflective film 20 is disposed on the third surface 13 and may be a total reflection film, a half penetrating semi-reflective film, a half penetrating semi-reflective optical film, a multilayer light, or a metal film. Piece...etc. The reflective film 2 n batch "丄ώ 系 系 system is used to regulate the anti-gamma 2G material of the third surface light nucleus, and the light reading transmittance of the light-emitting diode, such as (4) the thickness of the gold photo, will produce different light. Transmissibility/reflectance. In combination with the lens material, the light-emitting diode structure with reflective film can exhibit various forms of light field distribution. The reflective film 20 can be a metal film, such as a silver metal film, The metal film ... etc. can be either a uniform thickness or a non-equal thickness. As shown in Fig. 2, when the thickness of the silver metal film is about Η, the transmittance/reflectance are approximately equal and the silver metal film is equal. When the thickness is more than 40 nm, it is almost in a state of total reflection. As shown in Fig. 3, when the thickness of the aluminum metal film is about 7 nm, the transmittance/reflectance is about equal, and when the aluminum metal film is When the thickness of the sheet is more than 2 nanometers, it is almost in the state of total reflection. According to the characteristics of the above metal diaphragm, various transmittance/reflectance metal diaphragms can be designed according to different thicknesses. Rate/reflectance will vary with metal diaphragm type and thickness Therefore, by different metal diaphragms and different thicknesses, such as the thickness of the center of the metal diaphragm is less than the thickness of the two sides, so that the center and the sides have different transmittance / reflectivity 'to adjust the light-emitting diode Light flux and transmittance. The above-mentioned light-emitting diode lens structure with a reflective film may further be provided with a second lens 30, a phosphor layer 40 or a phosphor layer 40 and a first layer on the reflective film 20. The related embodiment of the three-lens 50' is described as follows: As shown in FIG. 4, the present embodiment is an embodiment of a light-emitting diode lens structure having a reflective film, which further has a second lens 30. The second lens 30 has a fourth surface 31 and a fifth surface 32, wherein the fourth surface 31 200936953 is bonded to the reflective film 20 by optical glue, and the fifth surface 32 is opposite to the end of the reflective film 2 The two surfaces U form a continuous curved surface. The material of the second lens 30 may be a light guiding material, which is the same as or different from the first lens, and may be designed as a polygonal structure in cooperation with the first lens 1 . Cylindrical structure Or an aspherical structure for regulating the light field distribution of the light emitted by the reflective film 20. As shown in FIG. 5, the embodiment is a third embodiment of the light-emitting diode lens structure with a reflective film. The system further has a phosphor layer 4, containing phosphor powder and disposed on the reflective film 20. The phosphor powder is used to adjust the color and color temperature of the LED, and the color of the phosphor powder is differently proportioned. There will be some differences, so the technique of color mixing determines the fineness of the color and the brightness of the white light. As shown in Fig. 6, this embodiment is a light-emitting diode structure with a reflective film. In a fourth aspect, the system further has a phosphor layer 4; and a third lens 50. The phosphor layer 40 is disposed on the reflective film 2, and the phosphorescent powder of different proportions is illuminated by the reflective film. The color of the diode lens is light, and the phosphor mixing technique determines the richness of the color. The third lens 50 has a sixth surface 51 and a seventh surface 52, wherein the sixth surface 51 is bonded to the phosphor layer 40, and the seventh surface 52 is opposite to the end of the reflective film 20 and the second lens 52. Surface 12 forms a continuous curved surface. The material of the third lens 5〇 may be the same as or different from the first lens 10, and may be designed as a polygonal structure, a cylindrical structure, a spherical structure, or an aspherical structure in cooperation with the first lens 10. The purpose of the third lens 50 is to help regulate the light field distribution of the 200936953 over-reflecting film 20 and the light exiting through the phosphor layer 4. In the conventional hemispherical light-emitting diode package, if the light emitted by the light-emitting diode is a lambertian distribution, the light-emitting diode light distribution after the package is as shown in (4), and the Lambertian diffuse distribution is also exhibited. . However, by using the light-emitting diode lens structure with a reflective film, the second lens ig, the second lens 50 and the reflective film 20 are spherical structures, and it is difficult to reverse the thickness of the 2Q, and the light-emitting two can be changed. Polar body light field distribution. As shown in Fig. 2, if a silver metal diaphragm is used, ❹ ❹ and the film thickness is controlled to be greater than 40 nm, and the incident light transmittance coefficient is (U ' The f|j can be obtained as shown in Fig. 8 by applying the light field distribution®-, which has the youngest pair of illuminating intensity and the lateral light field distribution when viewing A 6 degrees. As shown in Fig. 3, It is also possible to adjust the light penetration to 0.5 by using the metal film of the inscription, and control the thickness of the aluminum metal film to be between 6 and 8 nm, and then adjust according to different angles of incidence, so that the light penetration coefficient of each person is Q 5, the applied light field distribution diagram 2 as shown in Fig. 9 is obtained, which is a uniform intensity θ distribution. The second embodiment of the light field is used to illustrate the features of the present invention, and the purpose thereof is It will be understood that those skilled in the art will be able to understand the invention and the invention may be practiced without departing from the scope of the invention, and other equivalent modifications or modifications may be included without departing from the spirit of the invention. In the scope of the patent application described below. [Simplified description of the drawings] Figure 1 is a reflection film of the present invention. Optical diode structure implementation 11 200936953 聊ί编 m: Aspect 1. Figure 2 is a graph showing the relationship between thickness and transmittance/reflectance of a silver metal diaphragm. Figure 3 is an aluminum metal film. The relationship between the thickness of the sheet and the transmittance/reflectance. Fig. 4 is a second embodiment of the light-emitting diode lens structure with a reflective film of the present invention. Fig. 5 is a reflective film of the present invention. The light-emitting diode lens structure is implemented in the third embodiment. FIG. 6 is a fourth embodiment of the present invention, which is a light-emitting diode structure with a reflective film. FIG. 7 is a light-emitting diode of a conventional hemispherical package structure. Polar body light field distribution diagram. Fig. 8 is a light field distribution diagram of a light-emitting diode lens structure with a reflection film according to the present invention. Fig. 9 is a light-emitting diode with a reflection film of the present invention. The lens structure is applied to the light field distribution diagram 2. [Main component symbol description] 10 ........ First lens 11 ........ First surface 12 ........ Two surfaces 13 . . . third surface 14 ........ groove structure 12 200936953 20........ reflective film 30 ........ Two lenses 31........fourth surface 32........fifth surface 40........fluorescent powder layer 50........third Lens 51 ........sixth surface 52 ........seventh surface ❹

Claims (1)

200936953 十、申請專利範圍: 1· 一種具反射膜之發光二極體透鏡結構,其包括: 一第一透鏡,其具有:一第一表面,其係為一平面;一第 一表面,其係由該第一表面之邊緣延伸;以及一第二表 面,其係為一曲面,相接於該笫二表面並與該第一表面 相對設置;以及 一反射膜,設置於該第三表面上。 2. 如申請專利範圍第1項所述之具反射膜之發光二極體透鏡 ❹ 結構,其中該第一透鏡係為一多邊塑結構、一圓柱型結構: 一球型結構、或一非球型結構。 3. 如申請專利範圍第1項所述之具反射膜之發光二極體透鏡 結構’其中該第一表面係具有一凹槽結構。 4. 如申請專利範圍第1項所述之具反射膜之發光二極體透鏡 結構’其中該第三表面係為係為一凹陷曲面或一凸起曲面。 5. 如申請專利範圍第1項所述之具反射膜之發光二極體透鏡 φ 結構,其中該第三表面係為一平滑曲面、一粗糙曲面、一 球型曲面、或一非球型曲面。 6. 如申請專利範圍第1項所述之具反射膜之發光二極體透鏡 結構’其中該反射膜係為一全反射膜。 7. 如申請專利範圍第1項所述之發光二極體透鏡結構,其中 該反射膜係為一半穿透半反射膜。 8. 如申請專利範圍第1項所述之具反射膜之發光二極體透鏡 結構’其中該反射膜係為一半穿透半反射光學膜片。 200936953 I ::睛=範圍第1項所述之具反射膜之發光二極體透鏡 、-構其中該反射膜係為一多層光學膜片結構。 ι〇·:η:範圍第1項所述之具反射膜之發光二極體透鏡 …構j其中該反射膜係為一銀金屬膜片。 範圍第1項所述之具反射膜之發光二極體透鏡 ’、該反射膜係為一 I呂金屬膜片。 ❹ I2::請:利範圍第1項所述之具反射膜之發光二極體透鏡 、σ冓〃中該反射膜之厚度係為均一厚度。 13=请ί利範圍第1項所述之具反射膜之發光二極體透鏡 ^冓,/、中該反射膜之厚度係為非等厚度。 14· =申料利範圍第1項所述之具反射膜之發光二極體透鏡 結構,其進—步具有—第二透鏡,其具有一第四表面及一 第五表面,其中該第四表面係與該反射膜貼合而該第五 表面則與該反射膜之端部及該第二表面形成一連續曲面。 .如申凊專利範圍第1項所述之發光二極體透鏡結構,其進 —步具有一螢光粉層,其係設置於該反射膜上。 .如申請專利範圍第1項所述之具反射膜之發光二極體透鏡 、'。構,其進一步具有一螢光粉層,其係設置於該反射膜上; =、及第二透鏡’其具有一第六表面及一第七表面,其中 該第六表面係與該螢光粉層貼合,而該第七表面則與該反 、膜獏之^部及該第二表面形成一連續曲面。 15200936953 X. Patent Application Range: 1. A light-emitting diode lens structure with a reflective film, comprising: a first lens having: a first surface, which is a plane; a first surface, Extending from an edge of the first surface; and a second surface that is a curved surface that is adjacent to the second surface and disposed opposite the first surface; and a reflective film disposed on the third surface. 2. The light-emitting diode lens structure with a reflective film according to claim 1, wherein the first lens is a polygonal plastic structure, a cylindrical structure: a spherical structure, or a non- Spherical structure. 3. The light-emitting diode lens structure with a reflective film according to claim 1, wherein the first surface has a groove structure. 4. The light-emitting diode lens structure of the reflective film according to claim 1, wherein the third surface is a concave curved surface or a convex curved surface. 5. The illuminating diode lens φ structure having a reflective film according to claim 1, wherein the third surface is a smooth curved surface, a rough curved surface, a spherical curved surface, or an aspherical curved surface. . 6. The light-emitting diode lens structure with a reflective film as described in claim 1, wherein the reflective film is a total reflection film. 7. The light-emitting diode lens structure of claim 1, wherein the reflective film is a semi-transparent semi-reflective film. 8. The light-emitting diode lens structure with a reflective film as described in claim 1, wherein the reflective film is a half-transmissive semi-reflective optical film. 200936953 I:Eye=Scope The light-emitting diode lens with a reflective film according to Item 1, wherein the reflective film is a multilayer optical film structure. 〇 〇: η: The light-emitting diode lens of the reflective film according to the first item, wherein the reflective film is a silver metal film. The light-emitting diode lens of the reflective film according to the first aspect, wherein the reflective film is an I-Lu metal film. ❹ I2:: Please note: The thickness of the reflective film in the luminescent film of the reflective film described in item 1 of the Scope is a uniform thickness. 13=Please note that the thickness of the reflective film is unequal thickness in the light-emitting diode lens of the reflective film described in Item 1. The light-emitting diode lens structure with a reflective film according to claim 1, further comprising a second lens having a fourth surface and a fifth surface, wherein the fourth The surface is bonded to the reflective film, and the fifth surface forms a continuous curved surface with the end of the reflective film and the second surface. The illuminating diode lens structure of claim 1, further comprising a phosphor layer disposed on the reflective film. A light-emitting diode lens with a reflective film as described in claim 1 of the patent application, '. The structure further has a phosphor layer disposed on the reflective film; and a second lens having a sixth surface and a seventh surface, wherein the sixth surface is associated with the phosphor The layer is bonded, and the seventh surface forms a continuous curved surface with the opposite portion of the film and the second surface. 15
TW97107049A 2008-02-29 2008-02-29 Structure of LED lens with reflective film TW200936953A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10505086B2 (en) 2017-09-29 2019-12-10 Au Optronics Corporation Light source device
TWI705586B (en) * 2014-09-26 2020-09-21 晶元光電股份有限公司 Light-emitting device
US11011681B2 (en) 2013-11-14 2021-05-18 Epistar Corporation Light-emitting device and the method of manufacturing the same
US11165000B2 (en) 2014-07-28 2021-11-02 Epistar Corporation Light-emitting apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011681B2 (en) 2013-11-14 2021-05-18 Epistar Corporation Light-emitting device and the method of manufacturing the same
US11165000B2 (en) 2014-07-28 2021-11-02 Epistar Corporation Light-emitting apparatus
TWI705586B (en) * 2014-09-26 2020-09-21 晶元光電股份有限公司 Light-emitting device
US10505086B2 (en) 2017-09-29 2019-12-10 Au Optronics Corporation Light source device
TWI708408B (en) * 2017-09-29 2020-10-21 友達光電股份有限公司 Light source device

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