TW200936791A

TW200936791A - Sputtering target material and sputtering target made therefrom

Info

Publication number: TW200936791A
Application number: TW097146140A
Authority: TW
Inventors: Kazuo Matsumae
Original assignee: Mitsui Mining & Smelting Co
Priority date: 2007-11-28
Filing date: 2008-11-28
Publication date: 2009-09-01
Also published as: JP2009127125A; KR20090110922A; CN101631893A; TWI411698B; WO2009069658A1; CN101631893B

Abstract

The present invention provides a sputtering target material and a sputtering target made therefrom, which can effectively decrease the happening of arcing and prevent breaking and cracking from happening. The sputtering target material according to the present invention is approximately plate-like with a rectangular sputtering face, rectangular sputtering faces and a rectangular bonding face, wherein a corner portion formed by at least three abutting faces among the plurality of faces constructing the sputtering target material is chamfered.

Description

200936791 ， · 六、發明說明：【發明所屬之技術領域】 . 本發明係有關以對角落部施作倒角處理為特徵之藏 . 鍍靶材、及由此製得之濺鍍靶。【先前技術】以往，就在製造例如半導體等電子零件用材料及電氣零件用材料之際所使用的成膜法而言，廣泛採用能夠容易控制膜厚及成分的濺鍍法。就此種濺鍍法中所使甩的濺鍍 ❹靶而言，一般係使用將由欲形成薄膜的材料所構成的濺鍍靶材與由具有優異的導電性及熱傳導性的材質所構成的底板(backing plate)藉由接合(bonding)材予以接合而成者。在使用濺鍍靶進行濺鍍處理之際，理想上應儘可能減少電弧作用（arcing)的發生以進行穩定的成膜。此外，在製 4濺鍍乾材之際亦要求藉由抑制該乾材的破裂或龜裂 (crack)的發生來獲得良好的良率。 ❹ 就能夠達到該些要求的靶材而言，於後述之專利文獻 1至3係揭示有對邊緣部施作倒角處理的t材。該些乾材的任-者皆例如對由濺鍍面與如側面之兩面所構成的邊緣部施作有倒角處理。然而，雖然該些乾材具有或多或少的改。效果i_依然無法能確實地減少電弧作用的發生。此外’在製造該些乾材之際，並無法充分地抑制無材的破裂或龜裂的發生。專利文獻1 :日本特開平11-61395號公報專利文獻2 :日本特開2000-345326號公報 3 320819 200936791 t · 專利文獻3 :曰本特開2003-55763號公報【發明内容】 (發明所欲解決之課題）本發明乃料上述情事而補者，其目的在於提供一種能夠確實地減少電弧作、裂的逾㈣“ 户用㈣生且不易發生破裂或龜，又材、及具備有此種濺鍍靶材的濺鍍靶。 (解決課題的手段）本發明的濺練材係具有矩形狀的㈣面側面及矩形狀的接合面之大致板狀者其中=狀的材所具有的複數個面之中的至少3個面抵接所开乾部係具有施作倒角處理而成的形狀。所开^的角落 ΐ理可為C倒角處理’亦可為R倒角處理。可施作於料在接理合可=於=賤鍵面侧的角落部，亦的邊材中，亦可對由2個面抵接所形成材接^㈣係將前述材與底板藉由接合此外’在上述濺鍍靶中，靶材。 β "排設置複數個前述濺鍍 (發明的效果）之二 Γ:::接，^ 因此在成為發生電弧作、的角洛部施作有倒角處理，要起點的角落部不具有尖形 320819 4 200936791 狀部。因此，只要使用本發明藏鑛乾材，便有效地抑制起因於角落部的電弧作用的發生，從濺鍍靶整體觀之電弧作用的發生亦明顯減少。此外，若使用本發明的濺鍍靶材，便能夠抑制起因於電弧作用的發生之龜裂或破裂的發生，而能夠使濺鍍靶材的利用效率格外提升。結果，便能夠實現穩定的成膜製程。並且，濺鍍處理的電漿並不僅在濺鍍面亦會繞行至侧 ® 面，在此種情形下會有起因於接合面侧的角落部的電弧作用發生之虞。而若使用對接合面侧的角落部施作有倒角處理的本發明的濺鍍靶材，便能夠抑制此種電弧作用的發生，而亦能夠有效地防止因電弧作用的撞衝而導致的龜裂及破裂的發生。此外，本發明的濺鍍乾材亦能夠有效地防止起因於存在於角落部的尖形狀部的真空包裝的破損。 ❾【實施方式】以下，依據需要一邊參照圖式一邊對本發明的濺鍍靶材及使用該濺鍍靶材製造的濺鍍靶進行詳細說明。在本說明書中，「倒角處理」係指在面與面的交會所形成的角形成出斜面或圓弧之處理。單純以「倒角處理」稱之時，嚴格來說並未限定該處理所形成的角部的形狀。但以「C倒角處理」及「R倒角處理」稱之時，各者的處理所形成的角部的形狀係限定為各別規定的形狀。 C倒角處理係指將面與面抵接的部分以預定的角度進 5 320819 200936791 行切削的加工處理，而預定的角度係通常為相對於抵接的面成45±15°。Ca%的C倒角處理係指，自抵接的各者的面起的長度相對於濺鍍靶的厚度之比例（％)為α的C倒角處理。例如C5G%係指，在濺鐘乾的厚度為10mm時，在自抵接的各者的面起5mm處切削出45± 15 °的角度之C倒角處理。200936791, · VI. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a coating which is characterized by chamfering a corner portion, a plating target, and a sputtering target prepared thereby. [Prior Art] Conventionally, in the film formation method used for producing materials for electronic parts such as semiconductors and materials for electrical parts, a sputtering method capable of easily controlling film thickness and composition has been widely used. In the sputter target of the crucible in the sputtering method, a sputtering target composed of a material to be formed into a thin film and a substrate made of a material having excellent conductivity and thermal conductivity are generally used ( The backing plate is joined by bonding materials. When sputtering is performed using a sputtering target, it is desirable to minimize the occurrence of arcing for stable film formation. Further, it is also required to obtain good yield by suppressing the occurrence of cracking or cracking of the dry material at the time of the sputtering of the dry material. ❹ In order to achieve the target of the above-mentioned requirements, Patent Documents 1 to 3, which will be described later, disclose a t-material which is subjected to chamfering treatment on the edge portion. Any of these dry materials may be chamfered, for example, by the edge portion formed by the sputter surface and the side surfaces. However, although these dry materials have more or less modifications. The effect i_ still does not reliably reduce the occurrence of arcing. Further, when these dry materials are produced, the occurrence of cracking or cracking of the uncovered material cannot be sufficiently suppressed. Patent Document 1: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 2000-345326. Problem to be Solved by the Invention The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a device that can reliably reduce arcing and cracking, and that it is less likely to be cracked or turtles, and has such a material. A sputtering target of a sputtering target. (Means for Solving the Problem) The sputtering material of the present invention has a substantially plate-like shape of a rectangular (four) plane side surface and a rectangular joint surface. At least three of the faces abut against the opened stem having a shape that is subjected to chamfering treatment. The corner of the opening can be C-chamfering treatment 'can also be R chamfering treatment. In the sapwood of the saplings on the side of the splicing, the sapwood can also be joined to the sapwood which is abutted by the two faces. In the above sputtering target, the target. β " row sets a plurality of the aforementioned sputtering (Effects of the Invention) The second Γ:::, ^, therefore, the corner portion of the corner portion where the arc is generated is chamfered, and the corner portion of the starting point does not have a pointed shape of 320819 4 200936791. Therefore, as long as By using the dry material of the present invention, the arcing action caused by the corner portion is effectively suppressed, and the occurrence of the arc effect from the overall view of the sputtering target is also significantly reduced. Further, if the sputtering target of the present invention is used, It is possible to suppress the occurrence of cracks or cracks due to the occurrence of an arc action, and it is possible to particularly improve the utilization efficiency of the sputtering target. As a result, a stable film forming process can be realized. Moreover, the plasma of the sputtering process is not only The sputtered surface also circumscribes to the side surface, in which case an arcing action occurs at the corner portion of the joint surface side, and if the corner portion on the joint surface side is chamfered The treated sputtering target of the present invention can suppress the occurrence of such an arc action, and can also effectively prevent the occurrence of cracks and cracks caused by the impact of the arc. Further, the sputtering of the present invention The material can also effectively prevent the damage of the vacuum package caused by the pointed portion existing in the corner portion. [Embodiment] Hereinafter, the sputtering target of the present invention and the sputtering target can be used as needed with reference to the drawings. The sputter target to be produced will be described in detail. In the present specification, the "chamfering treatment" refers to a process of forming a slope or an arc at an angle formed by the intersection of the surface and the surface. When it is simply referred to as "chamfering treatment", the shape of the corner formed by the treatment is not strictly limited. However, when the "C chamfering treatment" and the "R chamfering treatment" are referred to, the shape of the corner formed by the treatment of each is limited to a predetermined shape. The C chamfering treatment refers to a process of cutting a portion where the surface abuts the surface at a predetermined angle, and the predetermined angle is usually 45 ± 15° with respect to the abutting surface. The Ca% C-chamfering treatment refers to a C-chamfering treatment in which the ratio (%) of the length from the surface of each of the abutting surfaces to the thickness of the sputtering target is α. For example, C5G% means that when the thickness of the splashing bell is 10 mm, a C-chamfering treatment of an angle of 45 ± 15 ° is cut at a distance of 5 mm from the face of each of the abutting faces.

Ca的C倒角處理係指在自抵接的各者的面起的長度為amm處以預定的角度進行切削的加工處理，例如C3係指，自抵接的各者的面起的長度為3mm處以預定的角度進 Ο 行切削的加工處理半徑。預定的角度係一般為45±15°。 R倒角處理係指使面與面抵接的部分形成為圓弧狀的加工處理。R/3 %的R倒角處理係指，半徑的長度相對於濺鍍靶的厚度之比例（％)為Θ的加工出圓弧狀的R倒角處理。例如R5〇%係指，在濺鍍靶的厚度為10mm時，加工出半徑5mm的圓孤形狀的R倒角處理。The C chamfering treatment of Ca refers to a processing for cutting at a predetermined angle from a face of each of the abutting faces, for example, C3 means that the length from the face of each of the abutting faces is 3 mm. The processing radius of the cutting is performed at a predetermined angle. The predetermined angle is typically 45 ± 15°. The R chamfering treatment refers to a processing in which a portion where the surface abuts against the surface is formed into an arc shape. The R/3 % R chamfering treatment means that the ratio (%) of the length of the radius to the thickness of the sputtering target is an arc-shaped R chamfering process of Θ. For example, R5〇% means that when the thickness of the sputtering target is 10 mm, a rounded R chamfering process having a radius of 5 mm is processed.

Rb的R倒角處理係指加工出半徑b mm的圓弧狀的R ^ 倒角處理，例如R3係指加工出半徑3mm的圓弧狀的R倒角處理。 <濺鍍靶材> 第1圖係本發明的濺鍍靶材的一例的濺鍍靶材1之斜視圖。如第1圖所示，濺鍍靶材1係為具有矩形狀的濺鍍面2、矩形狀的側面3及矩形狀的接合面4之大致板狀的藏鑛起材。濺鍍靶材1的特徵在於，由構成濺鍍靶材1的該些複 6 320819 200936791 數個面之中的至少3個面抵接所形成的角落部A係具有施作倒角處理而成的形狀。第2圖係大致板狀的· 般的機械加工零件的斜視圖。在機械加工零件等中，「邊緣部」係指兩個面交會的部分，於第2圖係顯示有邊緣部20。在機械加工零件等中，「角落部」係指含有3個面的交點之部位，於第2圖係顯示有角落部22。該些之定義係為依據JIS B0051-2004者。濺鍍靶材1的角落部A係為濺鍍面2、接合面4之與 ® 侧面3的任3個面抵接之部分，並施作有倒角處理。此種角落部在未施作有倒角處理時，此角落部係呈現含有3個面的緣部之交點的三角錐狀。當進行濺鍍處理時，若在濺鍍靶材存在有此種的三角錐狀的角落部，則電弧作用的發生率會起因於該形狀而變得非常高。即使此種的電弧作用所產生的撞擊很小，仍會有於濺鍍靶材造成缺損之虞。此外，若所產生的撞擊很大，則會有濺鍍靶材破裂之虞。 q 本發明濺鍍靶材係藉由對該角落部A施作倒角處理而將可能存在於角落部的三角錐狀部去除，使濺鍍處理時的電弧作用的發生大幅減少，且能夠防止濺鍍靶材的缺損及破裂。具體上，此種的倒角處理可為C倒角處理，亦可為R 倒角處理。例如，於第3圖顯示對角落部A施作有C倒角處理的本發明的濺鍍靶材1的放大斜視圖。第3圖係施作有C 倒角處理的濺鍍靶材1之圖，其中，第3圖（a)係為以C1 7 320819 200936791 且以45°進行切削的c倒且以45。進行切刮& 圆弟3圏（b)係為以C2 且以倒角處理之圖，第3圖⑷係為以。的厚度皆為uj 角處理之圖。此時的機鍍把材1 •frn I- 複數個面：中=倒角處理係指將由構成該濺_材i的的角度進行=T抵接所形成的角落部A以預定。，較佳為45。。在祐工處理。預疋的角度通常係為45±15 Ο 抵接而形成在二=的處理時’能夠將由3個面而能夠有效地防止起因於一錐狀去除而成為平面形狀’ 的電弧作用。雖然A的三角錐狀而發生 20施作有倒角處理之至第3圖⑷皆係未姆邊緣部冉處理之例’但由能夠從鄰接於位去除尖狀部的觀點來看， °的邛倒角處理。看較佳為也對該些邊緣部20施作種c倒角處理係依濺鑛乾材1的厚度動，而在濺鍍靶材i K夠變 ❹ 佳為通常表示3至至2〇_左右時，較 ”之數字)的C倒角處理。Ca%的C倒角 Y至個面抵接所形成的角落部A中，藉由：在由3 二=角形狀的面的各邊的長:相對於崎二二度d成為α %之c倒_ I® 的尽 d词角處理。因此，前述Ca% 示之數字’較佳為表示3至5。之數字)的。= 理仙’自抵接的各者的面起的長度1相對於濺趣2處的厚度d的比例（％)亦即藉由進行c倒角處理而新形成的 1 8 320819 200936791 三角形狀的面的各邊的長度1相對於磯鍍靶材1的厚度d 的比率，通常為3(%)至80W、較佳為3㈤至5〇(%)之c 倒角處理。具體而言’例如在濺鍍乾材i的厚度4為1〇丽時’C·係指’自抵接的各者的面起的長度亦即藉由進行 e倒角_而新形成的^形_面的各邊的長度]成為 lmm之C倒角處理。此外，此種的可為C0·3至C5的C隹角處理。C0·3至C5的C倒角處理係 ' ❽面起的長度亦即藉由進行c倒角處理：，抵接的各者的的面的各邊的長度1成為G.3mmi 〇s新形成的一角形狀例如，C倒角處理係依濺鑛乾材j _之C倒角處理° 而對於厚度5mm的舰乾材！則/ d而能夠變動’The R chamfering treatment of Rb refers to an arc-shaped R ^ chamfering process with a radius of b mm. For example, R3 means an arc-shaped R chamfering process with a radius of 3 mm. <Splating target> Fig. 1 is a perspective view of a sputtering target 1 as an example of a sputtering target of the present invention. As shown in Fig. 1, the sputtering target 1 is a substantially plate-shaped ore-like material having a rectangular sputtering surface 2, a rectangular side surface 3, and a rectangular bonding surface 4. The sputtering target 1 is characterized in that the corner portion A formed by abutting at least three of the plurality of surfaces of the plurality of 6 320819 200936791 constituting the sputtering target 1 is subjected to chamfering treatment. shape. Fig. 2 is a perspective view of a general machined component in a substantially plate shape. In the machined parts and the like, the "edge portion" refers to a portion where two faces meet, and the edge portion 20 is shown in FIG. In the machined parts and the like, the "corner portion" means a portion including intersections of three faces, and the corner portion 22 is shown in Fig. 2 . These definitions are based on JIS B0051-2004. The corner portion A of the sputtering target 1 is a portion where the sputtering surface 2 and the bonding surface 4 abut against any three surfaces of the ® side surface 3, and is chamfered. When such a corner portion is not subjected to chamfering treatment, the corner portion presents a triangular pyramid shape having an intersection of the edges of the three faces. When the sputtering target is subjected to such a triangular pyramid-shaped corner portion in the sputtering target, the occurrence rate of the arc action is extremely high due to the shape. Even if the impact caused by such arcing is small, there is still a flaw in the sputtering target. In addition, if the impact generated is large, there is a rupture of the sputter target. q The sputtering target of the present invention removes the triangular pyramid portion which may exist in the corner portion by chamfering the corner portion A, thereby greatly reducing the occurrence of arcing during the sputtering process and preventing it from occurring. Defects and cracks of the sputter target. Specifically, the chamfering treatment may be C chamfering or R chamfering. For example, in Fig. 3, an enlarged perspective view of the sputtering target 1 of the present invention in which the corner portion A is subjected to C-chamfering treatment is shown. Fig. 3 is a view showing a sputtering target 1 which is subjected to C chamfering treatment, wherein Fig. 3(a) is a C which is cut at 45° with C1 7 320819 200936791 and cut at 45°. Scratch & Round 3 (b) is a graph with C2 and chamfered, and Figure 3 (4) is for. The thickness is the map of the uj angle processing. At this time, the plate plating material 1 • frn I - a plurality of faces: the middle = chamfering process means that the corner portion A formed by the angle T = abutting at the angle constituting the splash material i is predetermined. Preferably, it is 45. . Handled in the work. The angle of the pre-twist is usually 45 ± 15 Ο and is formed at the time of the treatment of two = 'The arc effect can be effectively prevented from being deformed by a single cone by the three faces. Although the triangular pyramidal shape of A occurs, 20 is applied to the chamfering treatment to the third figure (4), which is the case of the treatment of the edge portion of the edge, but by the point of being able to remove the pointed portion from the adjacent position, °邛Chamfer processing. It is preferable to apply the c-chamfering treatment to the edge portions 20 in accordance with the thickness of the splashing dry material 1 and to change the sputtering target i K to be preferably 3 to 2 〇. C-chamfering treatment of the "number" of the left and right sides. The C-chamfering angle of Ca% is in the corner portion A formed by the abutting of the surface by: on each side of the surface by the shape of 3 Length: Compared with the second degree d, the number of c is reduced to _ I®. Therefore, the above-mentioned Ca% indicates that the number 'is preferably a number from 3 to 5.' 'The ratio (%) of the length 1 of the face of each of the abutting faces to the thickness d of the splash 2, that is, the newly formed face of the 13 8 320819 200936791 triangular shape by the c-chamfering process The ratio of the length 1 of the side to the thickness d of the rock-plated target 1 is usually 3 (%) to 80 W, preferably 3 (5) to 5 % (%) c chamfering treatment. Specifically, for example, sputtering When the thickness 4 of the dry material i is 1 〇, the length of the 'C· is the length of each side of the self-contacting, that is, the length of each side of the newly formed ^-shaped surface by e-chamfering_ ] becomes C-chamfering of lmm. In addition, this kind of C隹3 to C5 C 隹 angle processing. C0·3 to C5 C chamfering treatment system 'The length of the ❽ surface is also c chamfering treatment: the sides of the faces of each of the abutting The length 1 becomes the newly formed corner shape of G.3mmi 〇s. For example, the C chamfering treatment is based on the C-chamfering treatment of the splashing dry material j _ and the ship dry material of the thickness of 5 mm!

倒角處理，對於厚度10mm的機/為C0·3至C4的C 至C5的c倒角處理。 *材1則較佳為C0.3 具體上’此種的C倒角處Chamfering treatment, c-chamfering treatment for C/C5 with a thickness of 10 mm/C0·3 to C4. *Material 1 is preferably C0.3, specifically such a C chamfer

NC 〇紙的手工作業、平面磨床、雷射加轉由使用磨石或砂削、磨機(grinder)、或者放電加工、、機械加工、此外，於第4圖顯示對角落立、方法來施作。的之g 濺鍍的濺鍍靶材1的放大顯示圖。第卩Α施作有R倒角處倒角處理之圖，第4圖（b)係施圖(a)係施作有幻第4圖（c)係施作有R3的R 汉2的R倒角處理材1的厚度皆為10mm。角處理之圖。此時的如上所述，R倒角處理複數個面之中的至少3個面抵^由構成該機錄材】 9形成的角落部A作居 200936791 圓弧狀的加工處理。在施作有如此的處理時，能夠將由^ 個面抵接=成在角落部A的三角錐狀去除而作成為曲面狀，而能夠有效地防止起因於位於角落部A的三角錐狀邻而發生的電弧作用。雖然第4圖⑷至第4 _皆係未對邊緣部20施作有倒角處理之例，但由能夠從鄰接於角落部a 的部位去除尖狀部的觀點來看，較佳為也對該些邊緣部Μ 施作倒角處理。Manual work of NC crepe paper, surface grinder, and laser rotation are performed by using grindstone or sanding, grinder, or electric discharge machining, machining, and, in addition, Figure 4 shows the application of the corners and methods. Work. An enlarged view of the sputtered target 1 of the sputter. The third is applied as a graph of chamfering at the R chamfering, and the fourth graph (b) is a graph (a) is applied as a magical figure 4 (c) is an R of R R 2 The thickness of the chamfered material 1 was 10 mm. Angle processing map. At this time, as described above, at least three of the plurality of faces of the R chamfering process are processed by the corner portion A formed by the machine recording material 9 in the arc of 200936791. When such a treatment is applied, the triangular surface of the corner portion A can be removed by abutting the surface to be curved, and the triangular pyramidal shape at the corner portion A can be effectively prevented. The arcing that occurs. 4(4) to 4th are examples in which the edge portion 20 is not chamfered, but it is preferable that the tip portion can be removed from the portion adjacent to the corner portion a. The edge portions are chamfered.

此種R倒角處理係依濺鑛乾W的厚度d而亦能夠變動，而在濺鍍靶材1的厚度d為2mm至20mm左右時，較佳為R0%(冷通常表示3至8〇數字，心數字㈣倒角處理。該倒角處理係Γ半 Ο 度相對於賤_材1的厚度d的比例(％)通常為3(%)至 80(%)、較佳為3(%)至5〇(%)之R倒角處理。在此，例如在雜乾材i的厚度4為1Gmm時，R_係指加工出半徑長度為lmm的圓弧狀之處理。因此，就前述倒角處理而言’在織錄材1的厚度為5mm時，較佳為半徑。15随 =4咖的R倒角處理，在舰树i的厚度為腕以時，較佳為半徑0.3111111至8mm的R倒角處理。此外，此種的R倒角處理亦可為R〇 3至R5的r 〇角處理。R〇.UR5W倒角處理係指，半徑^的長度 .mm至〇.5mm之R倒角處理。 c倒角處理所採具體上，此種的R倒角處理係藉由與用之方法相同的方法來施作。發月的錢鑛乾材係只要由至少3個面抵接所形成的 320819 10 200936791 只要為施述的倒角處理而成的形狀便可。例如，的曲面形狀係只=倒角處理的角落部，則形成該角落部形成的曲面便可。王現於一部分具有藉由該尺倒角處理而形成角落部的曲&但就本發明的濺脉材1而言，較佳為的曲面。形狀之全部皆為藉由R倒角處理而形成此外，在第q胃. ❹ 的角落部周邊之葬⑻中’對於位在施作有c倒角處理 23c，復可為施^由C倒角處理所新形成的邊緣部23a至第5圖係顧Γ倒角處理的形狀。對側面33a至33=知的淹錄材的一例之斜視圖，雖然施作有R倒角處理、賤錢面32抵接的邊緣部35a至35b 理。第6圖係顯、1 =對角㈣並未施作有任何倒角處 43a 5下發明的濺鍍靶材1的一例之斜視圖，對側面43a至43b盥濺护而,^ 作有R倒肖虛裡接的邊緣部&至仏施 ❹ 箆5圖所-’並且對角落部亦施作有R倒角處理。如 :至:施:有為:::^^ 會形成叫緣一’在衫部36仍 Y . L 及35b的R倒角處理而產生的稜線有此種稜線W尖狀部_存在於角落部36時，在2鍍處理之際電弧作用會變得容易自該部分發生，並且亦有電弧作用作為開端使龜裂容易發生，進而成為乾材破裂的原因之虞。而若為本發明的錢鍍減！，則如第6圖所示，由於對由雜面2及側面43a至43b所構成的3個祕接所形 32〇819 11 200936791 能夠成的角落部A係施作有R倒角處理，因此不存在示的稜線X，在角落部A並未形成有尖狀第5圖所另外，雖然第6圖係以對角落部A施作有汉有效地防止起因於稜線X的電弧作用之發生 ’ 理的本發明的濺鍍靶材1為例來與習知例進行比★甸角處但如上所述，對本發明的濺鍍靶材〗的角落=比較說明，角處理並非限於R倒角處理，亦可為c _=施作的匈角落部A施作的倒角處理而言，從亦將鄰接。隹就辦部位的尖狀部媒實地去除的觀點來看，較、角洛部A的Such R chamfering treatment can also vary depending on the thickness d of the splash dry W, and when the thickness d of the sputtering target 1 is about 2 mm to 20 mm, it is preferably R0% (cold usually means 3 to 8 〇). The number, the heart number (4) chamfering treatment. The ratio (%) of the chamfering treatment system to the thickness d of the 贱 material 1 is usually 3 (%) to 80 (%), preferably 3 (%). R to the 5° (%) R chamfering treatment. Here, for example, when the thickness 4 of the dry matter i is 1 Gmm, R_ means processing of an arc having a radius of 1 mm in length. For the chamfering treatment, 'when the thickness of the weaving material 1 is 5 mm, it is preferably a radius. 15 with the R chamfering treatment of =4 coffee, when the thickness of the ship i is a wrist, preferably the radius is 0.3111111 to 8mm R chamfering treatment. In addition, this R chamfering treatment can also be the r 〇 angle treatment of R〇3 to R5. R〇.UR5W chamfering treatment means the length of the radius ^. mm to 〇.5mm R chamfering treatment. c chamfering treatment specifically, such R chamfering treatment is applied by the same method as the method used. The monthly money and mineral dry material system is composed of at least 3 faces. Affected by the formation of 320819 10 200936791 only For the chamfering process, the shape can be processed. For example, if the curved surface shape is only the corner portion of the chamfering process, the curved surface formed by the corner portion can be formed. The corner processing is formed by the corner processing. However, in the sputtering material 1 of the present invention, a curved surface is preferable. All of the shapes are formed by R chamfering treatment, and in addition, in the qth stomach. In the burial (8) around the corner portion, the c-chamfering process 23c is applied to the position, and the shape of the edge portion 23a to the fifth image which is newly formed by the C chamfering process is applied. An oblique view of an example of the side surface 33a to 33=the known flooded material is applied to the edge portions 35a to 35b which are subjected to the R chamfering process and the face 32 is abutted. Fig. 6 shows the line, 1 = diagonal (4) An oblique view of an example of the sputtering target 1 which has not been subjected to any chamfering portion 43a 5, and the side surfaces 43a to 43b are splashed and protected, and the edge portion & As for the 仏 ❹ 箆 5 map - 'and the corners are also treated with R chamfering. For example: to: Shi: There is:::^^ will form a name called a 'in the shirt 36 is still Y. The ridge line generated by the R chamfering treatment of L and 35b has such a ridge line W. When it is present in the corner portion 36, the arc action becomes easy to occur from the portion at the time of the 2 plating treatment, and there is also an arc effect. The crack is likely to occur at the beginning, which is a cause of cracking of the dry material. However, if the money is reduced by the present invention, as shown in Fig. 6, the pair of the surface 2 and the side faces 43a to 43b are formed. The three secret joints 32〇819 11 200936791 The corner portion A that can be formed is subjected to R chamfering treatment, so there is no ridgeline X shown, and the corner portion A is not formed with a pointed shape. In the sixth embodiment, the sputtering target 1 of the present invention which effectively prevents the arcing action caused by the ridgeline X from being applied to the corner portion A is compared with the conventional example. However, as described above, the corner of the sputtering target of the present invention = comparison shows that the angular treatment is not limited to the R chamfering treatment, and may be the chamfering treatment of the H _= applied Hungarian corner A. , will also be adjacent.隹隹隹隹部位的的的部位尖尖尖尖尖尖尖尖尖尖尖尖尖尖

此外，雖然第6圖係為對邊緣部45a至45/f處理。倒角處理之態樣，但如第3圖及第4圖示 ^作有R 部未施作有倒角處理之態樣。亦即，如第=邊緣不，於本發明的濺鍍靶材丨係只，丨、 #王第4圖所 :犧理便可’而從將尖狀部更確有較佳為對邊緣部亦施作有倒角處理規點來看，藏脉材！的角落部“^_ 在屬於濺鍍面2的背面側之桩 ^成4個’且钱合面4側亦形成4彻 ^ 上述的角落部的倒角處理係 =4個。若將理之撞擊的麟面2侧的角心^成在直接文到機錢處電弧作用的發生。 ’則能夠更有效地抑制然而，亦有濺鍍處理之撞至賤娜材的侧面的情形，且2該贿處理條件而到達傳達至接合面的情形。在受到^撞擊從婦的側面甚至機齡材1的接合面侧的角落A f擊之時’若於形成在存在有尖狀部，則有助 320819 12 200936791 ίη作用發生的可能性。此外，該電弧作用的發生亦可能成為濺鍍靶材1的龜裂或破裂的誘因。因此，較佳為對形成在濺鍍靶材〗的接合為對理，以去除部A亦施作倒角處除了4為電弧作用的發生·的尖狀部。藉由接合材使濺錄材！在其接合面與底板接合此而能夠製造⑽錄。所製造出係於出貨時二真空包裝進行梱包，但料f知的濺_，則由於在角落Further, although Fig. 6 is a treatment of the edge portions 45a to 45/f. The chamfering treatment is the same, but as shown in Fig. 3 and Fig. 4, there is a case where the R portion is not subjected to chamfering. That is, if the edge = edge is not, the sputter target of the present invention is only 丨, 王, #王第4图: Satisfaction can be 'from the tip portion is more preferred to the edge portion Also applied as a chamfering treatment point, Tibetan veins! The corner portion "^_ has four piles on the back side of the sputter surface 2 and four sides on the side of the money joint surface 4". The chamfering treatment system of the corner portion described above = four. The angle of the impact on the side 2 of the lining is formed by the arcing effect directly from the machine to the machine. 'It can be more effectively suppressed. However, there is also the case where the sputter treatment hits the side of the enamel material, and 2 When the bribe processing condition is reached and the conveyance is reached to the joint surface, when the impact is from the side of the woman or even the corner Af of the joint surface side of the machine-aged material 1, if it is formed in the presence of the pointed portion, there is Assist 320819 12 200936791 ίη The possibility of occurrence of the action. In addition, the occurrence of the arc action may also be a cause of cracking or cracking of the sputtering target 1. Therefore, it is preferable that the bonding formed on the sputtering target is For the reason, the removal portion A is also used as a chamfered portion except for the occurrence of arcing. In addition, the spattering material can be manufactured by bonding the sputter material to the joint surface and the bottom plate. Manufactured when the two vacuum packaging is carried out at the time of shipment, but the material is known to be splashed _ in the corner

部存在有錄部，因此經常發生h包裝破損。而本發明的滅錄材！則由於對角落料施作有倒角處理而將尖狀部自角洛部去除’因此能夠減少真空包震破損的發生。就本發明的濺鍍靶材1的材質而言，並未特別限制，可舉出例如ITO (Indium Tin Oxide ;氧化銦錫)的以銦或錫為主成分的金屬氧化物、鋁、銅、鈦、鉻、鉬、AZ〇 (鋁_ 鋅氧化物）等。其中，較佳為屬於靶材尺寸特別需要大型化的平面顯示器（flat panel display)用成膜所採用的材料之 ITO (Indium Tin Oxide)。 <減:鍍乾> Ο 本發明的滅鑛乾通常係藉由接合材將.一片上述的'歲鍍靶材1接合於底板而製造。就底板的材質而言，並未特別限定，可適宜地使用具有優異導電性/熱傳導性的純鋼、、銅系合金等。就接合材的材質而言，亦取決於濺錢靶材及底板的材質，並未特別限定，例如可使用銦系、錫系、銀系、鋅系等銲接合金、銲材、樹脂等。此外’本發明的濺鍍靶係如第7圖之濺鍍乾5〇的俯 320819 13 200936791 視圖所示’亦可為藉接合材將該些濺鍍靶材1在]且使用而製造的濺錄5〇，即所謂的多一：口面接合於底板52 個減難材！係在複數處形成有角落部A時，雖然於各該些複數個角落部A之钽只要至少對 :有上述倒角處理便可。但從能的發生的觀點來看，較佳 2地抑制電弧作用落部A亦施作有倒角處理。此外成奸村！的角〇 =:處的部位係大致區分成部位cZi，對位於哪個部位的角落部立D，而要採用的濺鑛裝置的互適性來決定便可處理貝L要依據與所藉由上述方式，能夠將在實施 :::::的發生原因之形成在•二:= 實：除，而能夠更有效地防止電弧作用的發生。〇以下’根據實施例更具體地說明本說明，作非限疋於該些實施例。 -本發月並進行S。，使賴製得㈣錄材並按照以下的評價項目《接合時的缺損》接I姑/製的底板。將該賤鑛％材從底板剝下，再度使用於進行接合°重複10次上述的接合步驟，確認於濺鍍靶材有無產生缺損。 320819 14 200936791 〇：接合面的邊緣部全周中，完全沒有產生缺損。 △:接合面的邊緣部全周中，產生1至3處的缺損。 X :接合面的邊緣部全周中，產生4處以上的缺損。 t 《包裝時的破損》對經真空包裝的濺鍍靶，在真空包裝用膜的剩餘部分的折入作業、梱包行程、或搬運行程之際，施加通常500g 左右的負何。因此，如第8圖所示，包裝時的破損的評價係以如下 ® 的方式進行：使用厚度l〇〇//m的真空包裝用膜（聚丙烯-聚乙烯製雙層構造膜）將所製得的濺鍍靶材進行真空包裝，且以上表面為接合面、下表面為濺鍍面的方式配置。接著，使用彈簧秤62將真空包裝用膜的剩餘部分以500g 的力從上表面上方朝箭頭方向（垂直方向）拉引，確認此時真空包裝有無破損。〇.真空包裝無產生破損。 Q X:真空包裝產生破損。《電弧作用發生次數》使用所製得的濺鍍靶，在下述的濺鍍條件下施行濺鍍處理，並藉由電孤作用計數器（// Arc Monitor MAM Genesis/ Landmark Technology Co., Ltd 製）計數電弧作用發生次數。濺鍍條件製程壓力=〇.4Pa 投入電力量= 3W/cm2 15 320819 200936791 濺鍍時間=3小時成膜溫度=室溫 [實施例1] 如第6圖所示’製作寬度150mmx長度635mmx厚度 10mm的大致板狀的ιτο濺鍍靶材（Sn〇2=1〇wt%、相對密度99.8%) ’且對邊緣部45a至45c施作R1的倒角處理，並且對位於濺鍍面2的4個角落部a施作R1的倒角處理。接著，使用上述接合材將該濺鍍靶材1接合於無氧銅製的底板(230mmx750mmx20mm)，而製作得濺鍍靶。使用所製得的濺鑛把’針對上述各評價項目進行評價。於表^ 顯示所得的評價結果。 [比較例1] 如第5圖所示，製作寬度15〇mmx長度635mmx厚度 l〇mm的大致板狀的IT〇濺鍍靶材（Sn〇2=i〇wt%、相對密度99.8%)，且對邊緣部35a至35b施作ri的倒角處理。接著，與實施例1賴地進行而製作得舰乾，並進行各項評價。於表1顯示所得的評價結果。 [實施例2] 製作由表1顯示的材質所構成的IT〇缝㈣，且對位於濺鍍面2的4個角落部部Α施作C0.3的倒角處理， ^且對位於接合面的邊緣部及角落部施作CG.5的倒角處接著與實施例1同樣地進行而製作得藏鍵乾，並進行各項評價。於表1顯示所得的評價結果。 320819 16 200936791 .There is a recording department in the department, so the h package is often damaged. And the destruction material of the invention! Then, since the corner portion is chamfered, the tip portion is removed from the corner portion. Therefore, the occurrence of vacuum wrap damage can be reduced. The material of the sputtering target 1 of the present invention is not particularly limited, and examples thereof include metal oxides containing indium or tin as main components of ITO (Indium Tin Oxide), aluminum, and copper. Titanium, chromium, molybdenum, AZ〇 (aluminum_zinc oxide), and the like. Among them, ITO (Indium Tin Oxide) which is a material used for film formation for a flat panel display which is particularly required to have a large size of a target material is preferable. <Decrease: Plating Dry> 灭 The ore-killing dryness of the present invention is usually produced by joining a piece of the above-mentioned 'plated steel target 1 to the bottom plate by a joining material. The material of the bottom plate is not particularly limited, and a pure steel having excellent conductivity/thermal conductivity, a copper-based alloy, or the like can be suitably used. The material of the bonding material is also not particularly limited depending on the material of the sputtering target and the substrate. For example, a solder alloy such as an indium-based, tin-based, silver-based or zinc-based alloy, a consumable material, a resin, or the like can be used. In addition, the sputtering target of the present invention is as shown in the view of FIG. 7 of the sputtering of the dry 〇320819 13 200936791 view, which can also be used for the sputtering target 1 by the bonding material. Record 5 〇, the so-called one more: the mouth is joined to the bottom plate 52 to reduce the hard material! When the corner portion A is formed at a plurality of points, it is sufficient that at least the pair of corner portions A are provided with the chamfering treatment described above. However, from the viewpoint of the occurrence of energy, it is preferable to suppress the arc action. The drop portion A is also subjected to chamfering treatment. In addition to adultery! The corner 〇 =: the part is roughly divided into the part cZi, and the D is located at the corner of the part, and the compatibility of the splashing device to be used determines the basis and the way to be treated. It is possible to prevent the occurrence of arcing more effectively by forming the cause of the implementation of ::::: in the second: = real: divided. The following description is more specifically described in accordance with the embodiments, and is not limited to the embodiments. - This month and S. According to the following evaluation item "Defect at the time of joining", we will pick up the bottom plate of the I. The niobium ore% material was peeled off from the bottom plate, and was again used for bonding. The above-described joining step was repeated 10 times to confirm whether or not the sputter target was defective. 320819 14 200936791 〇: There is no defect at all in the edge of the joint surface. △: A defect of 1 to 3 occurred in the entire circumference of the edge portion of the joint surface. X: Four or more defects occur in the entire circumference of the edge portion of the joint surface. t "Damage at the time of packaging" A vacuum-packed sputtering target is applied with a load of approximately 500 g at the time of the folding operation, the bag stroke, or the conveyance stroke of the remaining portion of the film for vacuum packaging. Therefore, as shown in Fig. 8, the evaluation of the damage at the time of packaging was carried out as follows: a film for vacuum packaging (polypropylene-polyethylene double-layer structure film) having a thickness of l〇〇//m was used. The obtained sputtering target was vacuum-packed, and the upper surface was a joint surface, and the lower surface was a sputter surface. Next, the remaining portion of the film for vacuum packaging was pulled with a force of 500 g from the upper surface toward the direction of the arrow (vertical direction) using a spring balance 62, and it was confirmed whether or not the vacuum package was damaged at this time. 〇. The vacuum packaging is not damaged. Q X: Damaged vacuum packaging. "Number of arcing occurrences" Using the sputtering target prepared, sputtering treatment was performed under the sputtering conditions described below, and an electric soli counter (//Arc Monitor MAM Genesis/ Landmark Technology Co., Ltd.) was used. Count the number of arcing occurrences. Sputtering condition Process pressure = 〇.4Pa Input power amount = 3W/cm2 15 320819 200936791 Sputtering time = 3 hours Film forming temperature = room temperature [Example 1] As shown in Fig. 6 'Make width 150 mm x length 635 mm x thickness 10 mm The substantially plate-shaped πτο sputtering target (Sn 〇 2 = 1 〇 wt%, relative density 99.8%) 'and the edge portions 45a to 45c are subjected to a chamfering treatment of R1, and to the sputtering surface 2 The corner portion a is applied as a chamfering process for R1. Next, the sputtering target 1 was bonded to a bottom plate (230 mm x 750 mm x 20 mm) made of an oxygen-free copper using the above-mentioned bonding material to prepare a sputtering target. The resulting evaluation items were evaluated using the obtained splashing. The obtained evaluation results are shown in Table 2. [Comparative Example 1] As shown in Fig. 5, a substantially plate-shaped IT 〇 sputtering target having a width of 15 mm × 635 mm × a thickness of 10 mm was produced (Sn 〇 2 = i 〇 wt %, relative density: 99.8%). Further, chamfering processing of ri is applied to the edge portions 35a to 35b. Next, the ship was made in the same manner as in Example 1, and various evaluations were carried out. The evaluation results obtained are shown in Table 1. [Example 2] An IT quilting (four) composed of the materials shown in Table 1 was produced, and a chamfering process of C0.3 was applied to the four corner portions of the sputtering surface 2, and the pair was placed on the joint surface. The edge portion and the corner portion were applied as chamfered portions of CG.5, and then, in the same manner as in Example 1, a key was produced, and various evaluations were performed. The evaluation results obtained are shown in Table 1. 320819 16 200936791 .

[比較例2] 製作由表1顯示的材質所構成的ITO濺鍍靶材，對邊 …緣部及角落部無皆施作倒角處理。 . 接著’與實施例1同樣地進行而製作得濺鍍靶，並進打各項評價。於表i顯示所得的評價結果。 [實施例3至9、比較例3至5] 製作由表1顯示的材質所構成的ITO濺鍍靶材，且按照表1顯不的内容對邊緣部或角落部施作倒角處理。 ❹ 接著’與貫施例1同樣地進行而製作得濺鍍乾，並進行各項評價。於表1顯示所得的評價結果。 [實施例10] 製作2片寬度i5〇mmx長度635mmx厚度10mm的大致板狀的1T0濺鍍靶材（SnO2=10wt%、相對密度99.7%)，且對邊緣部45a至45c施作R1的倒角處理，並且對位於接合面的邊緣部及角落部施作C3的倒角處理。〇接著’使用上述接合材將該2片濺鍍靶材接合於底板’而製作得並排設置有2片濺鍍靶材的多分割濺鍍靶。2 片滅鑛乾材係以各者的長邊為平行排列的方式配置，其間隔為0.3mm。針對濺鍍面則對角落部B施作R1的倒角處理’亦對位於2片滅鑛乾材對峙的分割部之角落部A施作倒角處理。使用所製得的多分割濺鍍耙，針對上述各評價項目進行評價，於表1 _示所得的評價結果。 [實施例11] 除了按照表1顯示的内容施作位於濺鍍面及接合面的 17 320819 200936791[Comparative Example 2] An ITO sputtering target material composed of the materials shown in Table 1 was produced, and the edges and corner portions were not chamfered. Then, a sputtering target was produced in the same manner as in Example 1, and various evaluations were carried out. The obtained evaluation results are shown in Table i. [Examples 3 to 9 and Comparative Examples 3 to 5] An ITO sputtering target made of the material shown in Table 1 was produced, and the edge portion or the corner portion was chamfered according to the contents shown in Table 1. ❹ Next, sputtering was carried out in the same manner as in Example 1, and various evaluations were carried out. The evaluation results obtained are shown in Table 1. [Example 10] Two substantially plate-shaped 1T0 sputtering targets (SnO2 = 10 wt%, relative density: 99.7%) having a width of i5 mm × 635 mm x a thickness of 10 mm were produced, and R1 was applied to the edge portions 45a to 45c. The corner processing is performed, and the chamfering process of C3 is applied to the edge portion and the corner portion of the joint surface. 〇 Next, the two sputter targets were bonded to the underlayer by using the above-mentioned bonding material, and a multi-split sputtering target in which two sputtering targets were arranged side by side was produced. Two pieces of ore-killing dry material are arranged in such a manner that the long sides of each are arranged in parallel, and the interval is 0.3 mm. The chamfering process of applying the R1 to the corner portion B for the sputter surface is also performed by chamfering the corner portion A of the divided portion of the two pieces of the ore-killing dry material. Using the obtained multi-split sputtering ruthenium, evaluation was performed for each of the above evaluation items, and the obtained evaluation results are shown in Table 1. [Example 11] Except that the contents shown in Table 1 were applied to the sputter surface and the joint surface 17 320819 200936791

Hem部的㈣處理，*對位於2片濺鍍乾材重的刀#_1部的角落部A無施作倒角處理之外，其餘與實施例 1 〇 1¾ M it㈣製作得多分割雜把。使賴製得的多分割濺鍍靶’針對上述各評價項目進行評價，於表1顯示所得的評價結果。 [實施例12] 製作4片寬度i5〇mmx長度635mmx厚度的大致板狀的IT0濺鍍靶材(SnO2=10wt%、相對密度99.5%)，The (4) treatment of the Hem part, * the chamfering treatment of the corner portion A of the knife #_1 portion of the two sputter dry materials is not the same as the embodiment 1 〇 13⁄4 M it (4). The multi-split sputtering target produced by Lai was evaluated for each of the above evaluation items, and the evaluation results obtained are shown in Table 1. [Example 12] Four substantially plate-shaped IT0 sputtering targets having a width of i5 mm x 635 mm and a thickness of 635 mm x were produced (SnO2 = 10 wt%, relative density: 99.5%).

且對位於接合面的邊緣部施作C0.3的倒角處理。接著’使用上述接合材將該4片賤鍍乾材接合於底板’而製作得並排設置有4片濺鑛把材的多分割賤锻乾。4 片濺鍍靶材係以各者的2邊與其他濺鍍靶材的2邊平行排列的方式配置，其間隔為〇.3mm。針對濺鍍面則對角落部 B施作C2的倒角處理，對位於4片濺鍍鞑材對峙的分割部之角落部A無施作倒角處理。使用所製得的多分割濺鍍Further, a chamfering treatment of C0.3 is applied to the edge portion of the joint surface. Next, the four pieces of the ruthenium plated dry material were joined to the bottom plate by the above-mentioned joining material, and the multi-segmented upset dryness in which four pieces of splashing materials were arranged side by side was produced. The four sputtering targets were arranged such that the two sides of each of them were arranged in parallel with the two sides of the other sputtering targets, and the interval was 〇3 mm. For the sputtered surface, the corner portion B is subjected to a chamfering process of C2, and the corner portion A of the divided portion of the four sputtered coffins facing the crucible is not subjected to chamfering. Use of multi-split sputtering

把，針對上述各評價項目進行評價，於表丨顯評價結果。 [實施例13；) 除了按照表1顯示的内容施作位於濺鍍面及接合面，邊緣部及角落部的倒角處理之外，其餘與實施例12同樣: 進行而製作得多分割濺鍍靶。使用所製得的多分割濺乾’針對上述各評價項目進行評價，於表丨顯示所得的. 價結果。 [實施例14至15] 320819 18 200936791 除了取代ITO濺鐘乾材而改製作Sn〇2_5wt%Ta2〇5乾材（相對密度98%、寬度I50mmx長度635mmx厚度6mm)， . 且按照表1顯示的内容施作位於濺鑛面及接合面的邊緣部 . 及角落部的倒角處理之外，其餘與實施例1同樣地進行而製作得濺鍍靶，並進行各項評價。於表1顯示所得的評價結果。 [實施例16至17] 除了取代ITO濺鍍靶材而改製作Zn0_2wt%Al203靶 @ 材（相對密度99%、寬度15〇mmx長度635mmx厚度10mm)，且按照表1顯示的内容施作位於濺鑛面及接合面的邊緣部及角落部的倒角處理之外，其餘與實施例1同樣地進行而製作得濺鍍靶，並進行各項評價。於表1顯示所得的評價結果。 [實施例18、比較例6] 除了取代ITO濺鍍靶材而改製作ZnO-2wt%Ga2〇3靶〇材(相對密度99%、寬度I50mmx長度635mmx厚度7mm)，且按照表1顯示的内容施作位於濺鍍面及接合面的邊緣部及角落部的倒角處理之外，其餘與實施例1同樣地進行而製作得濺鍍靶，並進行各項評價。於表1顯示所得的評價結果。 [實施例19、比較例7] 除了取代ITO濺鍍靶材而改製作A1靶材（純度 99.999%、寬度150mmx長度635mmx厚度16mm)，且按照表1顯示的内容施作位於藏鍍面的邊緣部及角落部的倒角 19 320819 200936791 處理之外，其餘與實施例1同樣地進行而製作得賤錢乾，並進行各項評價。於表1顯示所得的評價結果。 [實施例20、比較例8] 除了取代ITO濺鍍靶材而改製作Cu靶材（純度 99.999%、寬度I50mmx長度635mmx厚度2mm)，且按照表1顯示的内容施作位於濺鍍面的邊緣部及角落部的倒角處理之外，其餘與實施例1同樣地進行而製作得濺鍍靶，並進行各項評價。於表1顯示所得的評價結果。 [實施例21、比較例9] 除了取代ITO濺鍍靶材而改製作M〇靶材（純度 99.95%、寬度15〇mmx長度635咖X厚度4mm)，且按照表 1顯示的内容施作位於濺鍍面的邊緣部及角落部的倒角處理之外，其餘與實施例1同樣地進行而製作得濺鍍靶，並進行各項評價。於表1顯示所得的評價結果。 320819 20 200936791"[表 i]In the evaluation of each of the above evaluation items, the results of the evaluation are evaluated. [Example 13;) The same as in Example 12 except that the sputtering surface and the joint surface, the chamfering treatment of the edge portion and the corner portion were applied in accordance with the contents shown in Table 1, and the multi-split sputtering was performed. target. The obtained multi-segment splashing was used to evaluate each of the above evaluation items, and the obtained price results were shown in the table. [Examples 14 to 15] 320819 18 200936791 In addition to replacing the ITO splashing clock dry material, a Sn 〇 2 _ 5 wt % Ta 2 〇 5 dry material (relative density 98%, width I 50 mm x length 635 mm x thickness 6 mm) was prepared, and the contents shown in Table 1 were applied. A sputtering target was produced in the same manner as in Example 1 except that the edge portion of the sputtering surface and the joint surface and the chamfering treatment of the corner portion were formed, and various evaluations were performed. The evaluation results obtained are shown in Table 1. [Examples 16 to 17] In addition to replacing the ITO sputtering target, a Zn0 2 wt % Al 203 target material (relative density 99%, width 15 〇 mm x length 635 mm x thickness 10 mm) was prepared, and the contents shown in Table 1 were applied to be splashed. A sputtering target was produced in the same manner as in Example 1 except that the edge portion and the corner portion of the joint surface and the joint surface were chamfered, and various evaluations were performed. The evaluation results obtained are shown in Table 1. [Example 18, Comparative Example 6] A ZnO-2 wt% Ga2〇3 target crucible (relative density 99%, width I50 mmx length 635 mmx thickness 7 mm) was produced instead of the ITO sputtering target, and the contents shown in Table 1 were shown. A sputtering target was produced in the same manner as in Example 1 except that chamfering treatment was applied to the edge portion and the corner portion of the sputtering surface and the bonding surface, and various evaluations were performed. The evaluation results obtained are shown in Table 1. [Example 19, Comparative Example 7] An A1 target (purity: 99.999%, width: 150 mm x length: 635 mm x thickness: 16 mm) was produced instead of the ITO sputtering target, and the contents shown in Table 1 were applied to the edge of the plating surface. In the same manner as in the first embodiment, the chamfering of the portion and the corner portion was carried out in the same manner as in the first embodiment, and the evaluation was carried out. The evaluation results obtained are shown in Table 1. [Example 20, Comparative Example 8] A Cu target (purity: 99.999%, width I50 mm x length 635 mm x thickness: 2 mm) was produced instead of the ITO sputtering target, and the contents shown in Table 1 were applied to the edge of the sputtering surface. In the same manner as in Example 1, except for the chamfering treatment of the portion and the corner portion, a sputtering target was produced, and various evaluations were performed. The evaluation results obtained are shown in Table 1. [Example 21, Comparative Example 9] An M 〇 target (purity 99.95%, width 15 〇 mm x length 635 coffee X thickness 4 mm) was produced instead of the ITO sputtering target, and the contents shown in Table 1 were applied. A sputtering target was produced in the same manner as in Example 1 except that the edge portion and the corner portion of the sputtering surface were chamfered, and each evaluation was performed. The evaluation results obtained are shown in Table 1. 320819 20 200936791"[Table i]

No. 靶材質尺寸 (寬度X長度X 厚度） T 緣部處理嶔1 T 1 I 理 ^2 B 邊緣 f 處理 B 1 I 理接合時的缺損包 % 時損電孤作用發生次數 •實施例1 ITO(10%SnO2)相對密度:99.8% 150x635x10 R1 R1 無無 X 〇 10 比較例1 nO(10%SnO2)相對密度:99.8% 150x635x10 R1 無無無 X X 56 實施例2 ITO(10%Sn〇2)相對密度:99.6% 150x635x7 無 C0.3 C0.5 C0.5 〇〇 19 比較例2 ITO(10%SnO2)相對密度:99.6% 150x635x7 無無無無 X X 98 實施例3 ITO(10%SnO2)相對密度:99.5% 150x635x5 C1 C1 R1 C2 〇〇 21 比車交例3 rr〇(10%Sn〇2)相對密度:99.5% 150x635x5 C1 無無無 X X 88 實施例4 ITO(10%Sn〇2)相對密度:99.9% 150x635x10 C3 R5 R2 R2 〇〇 15 比較例4 rr〇(10%Sn〇2)相對密度:99.9% 150x635x10 C3 無 R1 無 Δ X 81 實施例5 ITO(10%SnO2)相對密度:99.8% 150x635x15 C5 C5 R5 R5 〇〇 22 實施例ό rr〇(10%SnO2)相對密度:99.8% 150x635x15 C5 無無 C2 Δ X 84 實施例7 rr〇(10%Sn〇2)相對密度:99.8% 150x635x5 R0.3 R1 C0.3 R0.3 〇〇 17 實施例8 HO(10%Sn〇2)相對密度·· 99.8% 150x635x5 R0.3 無 C2 R2 〇 X 62 實施例9 rr〇(10%Sn〇2)相對密度:99.7% 150x635x4 R3 R4 R0.5 R0.5 〇〇 9 比較例5 rr〇(10%SnO2)相對密度:99.7% 150x635x4 R3 無 C0.5 無 Δ X 59 實施例10 rr〇(10%Sn〇2)相對密度:99.7% (多分割祀） 150x635x10 R1 R1姑 C3 C3 〇〇 13 實施例Π rr〇(10%SnO2)相對密度:99.7% (多分割乾） 150x635x10 R1 無無 R0.5 △ X 79 實施例12 ITO(10%Sn〇2)相對密度： 99.5%(多分割乾） 150x635x10 無 C2586 C0.3 無 Δ 〇 24 實施例13 ITO(10%SnO2)相對密度:99.5% (多分割把） 150x635x10 無無 R1 C1 〇 X 94 實施例14 Sn〇r5%Ta205 相對密度：98% 150x635x6 R5 C5 無無 X 〇 17 實施例15 Sn〇2-5%Ta205 相對密度：98% 150x635x6 R5 無 C1 R1 〇 X 45 實施例16 Zn0-2%A1203 相對密度：99% 150x635x10 R0.5 C2 R1.5 C1 〇〇 23 實施例17 Zn0-2%A1203 相對密度：99% 150x635x10 R0.5 無 R3 C0.3 〇 X 83 實施例18 Zn0-2%Ga203 相對密度：99% 150x635x7 R2 R3 無 R1 △ 〇 16 比較例ό ZnO~2%Ga203 相對密度：99% 150x635x7 R2 無 C1 無 Δ X 57 實施例19 A1 (純度 99.999%) 150x635x16 C0.5 C1 / / / 〇 9 比較例7 A1 (純度 99.999%) 150x635x16 C0.5 無 / / / X 33 實施例20 Cu (純度 99.999%) 150x635x2 R2 R2 / / / 〇 5 比較例8 Cu (純度 99.999%) 150x635x2 R2 無 / / / X 29 實施例21 Mo (純度 99.95%) 150x635x4 C2 C2 / / / 〇 18 比較例9 Mo (純度 99_95%) 150x635x4 C2 無 / / X 71 21 320819 200936791 於由濺鍍面與側面構成的2個面抵接所形成的邊緣部之處理 ※二：於形成在濺鍍面的4個角落部之處理 ※3:於由接合面與侧面構成的2個面抵接所形成的邊緣部之處理 ※斗：於形成在接合面的4個角落部之處理 ※5 :於形成在多分割靶50的4個角落部B之處理 ※6 :於形成在多分割靶50的4個角落部B之處理【圖式簡單說明】第1圖係本發明的濺鍍靶材的一例之斜視圖。第2圖係大致板狀的一般的機械加工零件的斜視圖。第3圖係本發明的濺鍍靶材的一例的角落部A的放大斜視圖。⑷係顯示對角落部A施作有C1的倒角處理，（b) 係顯示對角落部A施作有C2的倒角處理，（c)係顯示對角落部A施作有C3的倒角處理。第4圖係本發明的濺鍍靶材的一例的角落部A的放大斜視圖。（a)係顯示對角落部A施作有R1的倒角處理，（b) 係顯示對角落部A施作有R2的倒角處理，（c)係顯示對角落部A施作有R3的倒角處理。第5圖係習知的濺鍍靶材的一例之斜視圖。對邊緣部 33a至33b施作有R倒角處理。第6圖係本發明的濺鍍靶材的一例之斜視圖。對邊緣部45a至45c施作有R倒角處理，並且對角落部A施作有 22 320819 200936791 R倒角處理。第7圖係並排設置複數片濺鍍靶材1而成的濺鍍靶50 之俯視圖。第8圖係顯示在實施例包裝時的破裂的評價方法之示意圖。【主要元件符號說明】 1、 10 •濺鍍靶材 2、 32 滅鍍面 © 3、33a、33b、43a、43b 侧面 4 接合面 20、23a至23c 邊緣部 22、36 角落部 35a、35b、45a至45c藉由R倒角處理而形成曲面的邊緣部 50 52 濺鍍靶（多分割濺鍍靶）底板No. Target material size (width X length X thickness) T Edge processing 嵚1 T 1 I ^^2 B Edge f Processing B 1 I Defective package % at the time of bonding The number of occurrences of loss of electrical isolation • Example 1 ITO (10% SnO2) Relative density: 99.8% 150x635x10 R1 R1 No X 〇 10 Comparative Example 1 nO (10% SnO2) Relative density: 99.8% 150x635x10 R1 No XX 56 Example 2 ITO (10% Sn 〇 2) Relative density: 99.6% 150x635x7 No C0.3 C0.5 C0.5 〇〇19 Comparative Example 2 ITO (10% SnO2) Relative density: 99.6% 150x635x7 No XX 98 Example 3 ITO (10% SnO2) relative Density: 99.5% 150x635x5 C1 C1 R1 C2 〇〇21 Example 3 rr〇(10%Sn〇2) Relative density: 99.5% 150x635x5 C1 No XX 88 Example 4 ITO (10%Sn〇2) relative Density: 99.9% 150x635x10 C3 R5 R2 R2 〇〇15 Comparative Example 4 rr〇(10%Sn〇2) Relative density: 99.9% 150x635x10 C3 No R1 No Δ X 81 Example 5 ITO (10% SnO2) Relative density: 99.8 % 150x635x15 C5 C5 R5 R5 〇〇22 Example ό rr〇(10%SnO2) Relative density: 99.8% 150x635x15 C5 No C2 Δ X 84 Example 7 rr〇 (10%Sn〇2) Relative density: 99.8% 150x635x5 R0.3 R1 C0.3 R0.3 〇〇17 Example 8 HO (10%Sn〇2) relative density ·· 99.8% 150x635x5 R0.3 No C2 R2 〇X 62 Example 9 rr 〇(10%Sn〇2) Relative density: 99.7% 150x635x4 R3 R4 R0.5 R0.5 〇〇9 Comparative Example 5 rr〇(10%SnO2) Relative density: 99.7% 150x635x4 R3 No C0.5 No Δ X 59 Example 10 rr〇(10%Sn〇2) Relative density: 99.7% (multiple split 祀) 150×635x10 R1 R1 CC3 C3 〇〇13 Example Π rr〇(10%SnO2) Relative density: 99.7% (multi-segment dry 150x635x10 R1 No R0.5 △ X 79 Example 12 ITO (10%Sn〇2) Relative density: 99.5% (multi-split dry) 150x635x10 No C2586 C0.3 No Δ 〇24 Example 13 ITO (10%SnO2 Relative density: 99.5% (multiple split) 150x635x10 no R1 C1 〇X 94 Example 14 Sn〇r5%Ta205 Relative density: 98% 150x635x6 R5 C5 No X 〇17 Example 15 Sn〇2-5%Ta205 Relative density: 98% 150x635x6 R5 No C1 R1 〇X 45 Example 16 Zn0-2% A1203 Relative density: 99% 150x635x10 R0.5 C2 R1.5 C1 〇〇23 Example 17 Zn0-2% A1203 Relative density: 99 % 150x635x10 R0 .5 No R3 C0.3 〇X 83 Example 18 Zn0-2%Ga203 Relative density: 99% 150x635x7 R2 R3 No R1 △ 〇16 Comparative example ZnO ZnO~2%Ga203 Relative density: 99% 150x635x7 R2 No C1 No Δ X 57 Example 19 A1 (purity 99.999%) 150x635x16 C0.5 C1 / / / 〇9 Comparative Example 7 A1 (purity 99.999%) 150x635x16 C0.5 No / / / X 33 Example 20 Cu (purity 99.999%) 150x635x2 R2 R2 / / / 〇5 Comparative Example 8 Cu (purity 99.999%) 150x635x2 R2 none / / / X 29 Example 21 Mo (purity 99.95%) 150x635x4 C2 C2 / / / 〇18 Comparative Example 9 Mo (purity 99_95%) 150x635x4 C2 No / / X 71 21 320819 200936791 Treatment of the edge portion formed by the contact between the two surfaces of the sputtered surface and the side surface *2: Treatment at the four corners of the sputter surface *3: Treatment of the edge portion formed by the contact between the two surfaces formed by the joint surface and the side surface * The treatment of the four corner portions formed on the joint surface *5 : formed in the four corner portions of the multi-divided target 50 Treatment of B *6 : Processing in the four corner portions B formed in the multi-divided target 50 [Simplified description of the drawing] Sputtering a perspective view showing an example of target. Fig. 2 is a perspective view of a general machined part having a substantially plate shape. Fig. 3 is an enlarged perspective view showing a corner portion A of an example of a sputtering target of the present invention. (4) shows that the corner portion A is subjected to C1 chamfering treatment, (b) shows that the corner portion A is subjected to C2 chamfering, and (c) shows that the corner portion A is subjected to C3 chamfering. deal with. Fig. 4 is an enlarged perspective view showing a corner portion A of an example of a sputtering target of the present invention. (a) shows that the corner portion A is subjected to a chamfering process of R1, (b) shows that the corner portion A is subjected to a chamfering process of R2, and (c) shows that the corner portion A is provided with R3. Chamfer processing. Fig. 5 is a perspective view showing an example of a conventional sputtering target. The edge portions 33a to 33b are subjected to R chamfering treatment. Fig. 6 is a perspective view showing an example of a sputtering target of the present invention. The edge portions 45a to 45c are subjected to R chamfering treatment, and the corner portion A is subjected to chamfering treatment of 22 320819 200936791 R. Fig. 7 is a plan view showing a sputtering target 50 in which a plurality of sputtering targets 1 are arranged side by side. Fig. 8 is a view showing the evaluation method of the crack at the time of packaging of the embodiment. [Description of main component symbols] 1, 10 • Sputtering target 2, 32 Exfoliation surface © 3, 33a, 33b, 43a, 43b Side 4 Joint faces 20, 23a to 23c Edge portions 22, 36 Corner portions 35a, 35b, 45a to 45c form a curved edge portion by R chamfering treatment 50 52 sputtering target (multi-split sputtering target)

60 62 A B60 62 A B

C、D d 真空包裝膜彈簧秤濺鍍靶材的角落部濺鍍靶50的角落部多分割錢鍵把中位^各鞋材的角落部A之部位滅鍍乾材1的厚度自抵接的各者的面起的長度 X 形成在角落部的稜線 23 320819C, D d vacuum packaging film spring scale sputter target corner portion of the sputter target 50 multi-divided money key to the middle of each corner of the corner material A of each shoe material to dry the thickness of the dry material 1 self-contact The length X of each face is formed at the corner of the ridgeline 23 320819

Claims

200936791 七、申請專利範圍： 1. 一種濺鍍靶材，係具有矩形狀的濺鍍面、矩形狀的侧面及矩形狀的接合面之大致板狀者，其中，由該濺鍍靶材所具有的複數個面之中的至少3個面抵接所形成的角落部係具有施作倒角處理而成的形狀。 2. 如申請專利範圍第1項之濺鍍靶材，其中，前述倒角處理係為C倒角處理。 3. 如申請專利範圍第2項之濺鍍靶材，其中，前述C倒 ◎ 角處理係為Ca %的C倒角處理（前述Ca %中的α表示 3至80之數字）。 4. 如申請專利範圍第2項之濺鍍靶材，其中，前述C倒角處理係為C0.3至C5且以45°進行切削的C倒角處理。 5. 如申請專利範圍第1項之濺鍍靶材，其中，前述倒角處理係為R倒角處理。 ❹ 6. 如申請專利範圍第5項之濺鍍靶材，其中，前述R倒角處理係為R β %的R倒角處理（前述R /3 %中的/5表示 3至80之數字）。 7. 如申請專利範圍第5項之濺鍍靶材，其中，前述R倒角處理係為R0.3至R5的R倒角處理。 8. 如申請專利範圍第1至7項中任一項之濺鍍靶材，其中，前述倒角處理係施作於形成在濺鍍面侧的角落部。 9. 如申請專利範圍第1至7項中任一項之濺鍍靶材，其 24 320819 200936791 中，前述倒角處理係施作於形成在接合面侧的角落部。 10.如申請專利範圍第1至7項中任一項之濺鍍靶材，其中，對由2個面抵接所形成的邊緣部施作有倒角處理。 , 11.如申請專利範圍第1至7項中任一項之濺鍍靶材，其中，該濺鍍靶材係由ΠΌ所構成。 12. —種濺鍍靶，係將申請專利範圍第1至11項中任一項之滅鍍乾材與底板藉由接合材接合而成。 13. 如申請專利範圍第12項之濺鍍靶，其中，並排設置有 ® 複數個申請專利範圍第1至11項中任一項之濺鍍靶材。 ◎ 25 320819200936791 VII. Patent Application Range: 1. A sputtering target having a substantially plate-shaped sputtering surface, a rectangular side surface, and a rectangular joint surface, wherein the sputtering target has The corner portion formed by abutting at least three of the plurality of faces has a shape which is subjected to chamfering. 2. The sputtering target according to claim 1, wherein the chamfering treatment is C chamfering. 3. The sputtering target according to claim 2, wherein the C-cut angle treatment is Ca% C-chamfering treatment (a in the aforementioned Ca% represents a number from 3 to 80). 4. The sputtering target according to claim 2, wherein the C-chamfering treatment is a C-chamfering treatment of C0.3 to C5 and cutting at 45°. 5. The sputtering target according to claim 1, wherein the chamfering treatment is R chamfering. ❹ 6. The sputtering target according to claim 5, wherein the R chamfering treatment is R β % R chamfering treatment (the /5 of the aforementioned R / 3 % represents a number from 3 to 80) . 7. The sputtering target according to claim 5, wherein the R-chamfering treatment is R-chamfering treatment of R0.3 to R5. 8. The sputtering target according to any one of claims 1 to 7, wherein the chamfering treatment is applied to a corner portion formed on the side of the sputtering surface. 9. The sputtering target according to any one of claims 1 to 7, wherein the chamfering treatment is applied to a corner portion formed on the joint surface side in 24 320819 200936791. The sputtering target according to any one of claims 1 to 7, wherein the edge portion formed by abutting the two faces is chamfered. 11. The sputtering target according to any one of claims 1 to 7, wherein the sputtering target is composed of ruthenium. A sputter target which is obtained by joining a dry plating material and a bottom plate of any one of claims 1 to 11 by a bonding material. 13. The sputtering target of claim 12, wherein the sputtering target of any one of the plurality of patent applications 1 to 11 is disposed side by side. ◎ 25 320819