TW200935700A - over voltage protecting device and its application - Google Patents

over voltage protecting device and its application Download PDF

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Publication number
TW200935700A
TW200935700A TW97104504A TW97104504A TW200935700A TW 200935700 A TW200935700 A TW 200935700A TW 97104504 A TW97104504 A TW 97104504A TW 97104504 A TW97104504 A TW 97104504A TW 200935700 A TW200935700 A TW 200935700A
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TW
Taiwan
Prior art keywords
substrate
air chamber
electrode layer
protection device
inductor
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Application number
TW97104504A
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Chinese (zh)
Inventor
Sheng-Fu Su
Hui-Ming Feng
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Inpaq Technology Co Ltd
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Publication date
Application filed by Inpaq Technology Co Ltd filed Critical Inpaq Technology Co Ltd
Priority to TW97104504A priority Critical patent/TW200935700A/en
Publication of TW200935700A publication Critical patent/TW200935700A/en

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Abstract

An over voltage protecting device comprises a gas-room device, an inductance device disposed on the air-room device and a top substrate disposed on the inductance device. The air-room device has a first lower substrate and a second lower substrate disposed on the first lower substrate. The first lower substrate has a conductive layer and a first groove on a surface thereof, and the first groove has a predetermined width. The conductive layer is distinguished into a first conductive member and a second conductive member. The second lower substrate has a second groove corresponding to the first groove on the bottom surface thereof. The first groove and the second groove construct into an air-room. As the above-mentioned structure, the over voltage protecting device provides a low-resistance device so as to solve the problems of surge and static electricity of the transmission line.

Description

200935700 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種整合電感與中空氣室之過電壓保 _ 護裝置及其應用,尤指一種可解決傳輸線上靜電問題之過電 壓保護裝置及應用方法。 【先前技術】 隨著電子元件朝高速、省電和小體積的需求,高速數位 系統之雜訊容忍度相對的減小很多,且隨著周圍環境靜電問 題與日倶增,但元件對靜電放電之防護力卻越來越差的情況 下,使得靜電放電問題對於電子產品之影響愈加嚴重。例如 手持式裝置由於元件縮小,對於使用環境也越發敏感,在較 為乾燥的地區,靜電問題也就造成數位產品失效的因素之 一,為了確保能夠在不損傷到裝置本身的電路或元件的前提 之下正常操作這些行動設備,適當的電路保護設計是必要的 ❿趨勢。 在選擇上,除了要針對產品的特性以外,也要仔細評估 元件本身的產品參數,比如說,保險絲就要注重操作電流、 工作溫度、普通操作電壓以及最大的可容忍電壓,避免因過 ‘ 度敏感或不夠靈敏而造成產品維修上的困擾。而在過電壓保 ' 護元件方面,除了要注重操作電壓以外,對於靜電與突波問 題的處理也是重點之一突波保護器(surge protection device,SPD)是電子設備雷電防護中不可缺少的一種裝置, 過去常稱為“過電壓保護器”。突波保護器的作用是把竄入 6 200935700 電力線、信號傳輸線的瞬時過電壓限制在設備或系統所能承 受的電壓範圍内,或將強大的雷電流泄流入地表(接地), 以提供必要的保護避免設備或系統不受衝擊而損壞。200935700 IX. Description of the Invention: [Technical Field] The present invention relates to an overvoltage protection device for integrating an inductor and a medium air chamber, and an application thereof, and more particularly to an overvoltage protection device capable of solving an electrostatic problem on a transmission line And application methods. [Prior Art] With the demand for high speed, power saving and small size of electronic components, the noise tolerance of high-speed digital systems is relatively reduced, and with the increase of static electricity in the surrounding environment, the components are electrostatically discharged. Under the condition that the protection is getting worse, the electrostatic discharge problem is more and more serious for electronic products. For example, handheld devices are more sensitive to the environment of use due to component shrinkage. In relatively dry areas, electrostatic problems are one of the factors that cause digital product failure, in order to ensure that the circuit or components of the device itself can be protected. Under the normal operation of these mobile devices, proper circuit protection design is a necessary trend. In addition to the characteristics of the product, the product parameters of the component itself should be carefully evaluated. For example, the fuse should focus on the operating current, operating temperature, normal operating voltage and maximum tolerable voltage. Sensitive or not sensitive enough to cause problems in product maintenance. In terms of overvoltage protection components, in addition to paying attention to operating voltage, the handling of static and surge problems is also one of the key points. Surge protection device (SPD) is an indispensable part of lightning protection for electronic equipment. Devices, formerly known as "overvoltage protectors." The function of the surge protector is to limit the transient overvoltage of the power line and signal transmission line of the 200935700 into the voltage range that the equipment or system can withstand, or to discharge a powerful lightning current into the ground (ground) to provide the necessary Protection against damage to equipment or systems from impact.

V 緣是,本發明人有感過電壓防護對於電子元件之重要 性,提出一種設計合理且有效提高過電壓防護以及抗靜電保 護之本發明。 【發明内容】 本發明之主要目的,在於提供一種整合電感與中空氣室 之過電壓保護裝置及其應用,該過電壓保護裝置可應用於傳 輸線上,以提供防突波、抗靜電等功效。 為了達成上述之目的,本發明係提供一種整合電感與中 空氣室之過電壓保護裝置,包括:一中空氣室單元,其包括: 一第一下基板,該第一下基板之一表面設有一電極層以及一 第一溝槽,其中該第一溝槽係用以將該電極層區分為一第一 0電極以及一第二電極,且該第一溝槽具有一預定寬度;以及 一設置於該第一下基板上之第二下基板,該第二下基板之下 表面設有一對應該第一溝槽之第二溝槽,其中該第一溝槽與 該第二溝槽形成一中空氣室;一設置於該中空氣室單元上之 ' 電感元件;以及一設置於該電感元件上之上基板。 ' 本發明亦提供一種整合電感與中空氣室之過電壓保護 裝置之應用方法,包括步驟如下:連接一電路單元於一電源 供應單元;以及並聯一整合電感與中空氣室之過電壓保護裝 置與該電路單元,其中該整合電感與中空氣室之過電壓保護 200935700 裝置包括:一中空氣室單元,其包括:一第一下基板,該第 一下基板之一表面設有一電極層以及一第一溝槽,其中該第 一溝槽係用以將該電極層區分為一第一電極以及一第二電 ^ 極,且該第一溝槽具有一預定寬度;以及一設置於該第一下 基板上之第二下基板,該第二下基板之下表面設有一對應該 第一溝槽之第二溝槽,其中該第一溝槽與該第二溝槽形成一 中空氣室;一設置於該中空氣室單元上之電感元件;以及一 設置於該電感元件上之上基板。 ❹ 本發明具有以下有益的效果:本發明提出之整合電感與 中空氣室之過電壓保護裝置及其應用,其可將電感與中空氣 室整合成為一過電壓保護單元,以將該過電壓保護單元與待 保護之電路早元並聯於傳輸線上’進而避免該待保護之電路 單元受到突波、靜電等所造成的影響。 為使能更進一步瞭解本發明之特徵及技術内容,請參閱 以下有關本發明之詳細說明與附圖,然而所附圖式僅提供參 考與說明用,並非用來對本發明加以限制者。 ❹ 【實施方式】 請參閱第一圖,本發明係提供一種過電壓保護裝置1, 其特徵在於該過電壓保護裝置1整合電感與中空氣室,該過 - 電壓保護裝置1可應用於一傳輸導線以達到解決靜電問題 之功效,該過電壓保護裝置1包括:一中空氣室單元10; 一設置於該中空氣室單元1 0上之電感元件2 0以及一設 置於該電感元件2 0上之上基板3 0 ;亦即該過電壓保護裝 8 200935700 置1係為一多層結構,以將電感與中空氣隙整合在單一元件 中。 ❹ 以下將針對上述每一單元進行詳細說明。請參見第一 圖,該中空氣室單〇包括—第—下基板丄〇 及一第 一下基板1 〇 2,該第二下基板1 〇 2係疊合於該第一下基 板1 0 1上。該第-下基板1 q丄之—表面設有—電極層工 〇 3並成形有一第一溝槽1 〇 1 1,該第一溝槽1 〇 i工係 :以將該電極層! 〇 3區分為一第一電極χ 〇3工以及一 弟二電極1 03 2 ;該第-溝槽1Ό1 :係由該.第—下基板 1 0 1之表面向下延伸至該第一下基板丄〇丄内部,且該篱 一溝槽1 Q 1 1具有-駭寬度w(請參考第二圖)。另一 =面該,二氣至早元1 0之第二下基板工〇 2係設置於該 第-下基板1 0 1上,且該第二下基板工〇 2之下表面成形 有-對應該第-溝槽i i i之第二溝槽丄Q 2 i(請參考 弟二圖)。故當該第二下基板丄〇2疊合於該第―下基板i 0 1上,該第二溝槽i 〇 2丄與該第—溝槽丄Q ^ ^即可形 成一中空氣室,以提供靜電防護的功能。 另外,請參考第二圖及第二A圖,該第二溝槽i 〇 2工 具有不_實施態樣。在第二A圖中,該第二溝槽丄〇2丄 係貝牙該第—下基板1 Q 2而形成—通孔。亦即本發明並不 限定該第二溝槽1 0 2 1延伸至該第二下基板1 〇 2内之 深度;該第二溝槽1 0 2 1之主要功能在於搭配該第-溝槽 1〇11以形成-令空氣室’而該第一 1^〇21所形成之中空氣室中存在有空氣,以提供= 9 200935700 氣放電(Air discharge)之靜電防, 規格或其他需求加以調整尺寸,2果;而該中空氣室可依 化調整。 且該軋室的深度亦可加以變The V edge is that the inventors have felt that the voltage protection is important for electronic components, and proposes a present invention which is reasonably designed and effectively improves overvoltage protection and antistatic protection. SUMMARY OF THE INVENTION The main object of the present invention is to provide an overvoltage protection device for integrating an inductor and a middle air chamber, and an application thereof, which can be applied to a transmission line to provide anti-surge, anti-static and the like. In order to achieve the above object, the present invention provides an overvoltage protection device for integrating an inductor and a middle air chamber, comprising: a middle air chamber unit, comprising: a first lower substrate, one surface of the first lower substrate is provided with a An electrode layer and a first trench, wherein the first trench is used to divide the electrode layer into a first 0 electrode and a second electrode, and the first trench has a predetermined width; and a a second lower substrate on the first lower substrate, a lower surface of the second lower substrate is provided with a pair of second trenches corresponding to the first trench, wherein the first trench and the second trench form a middle air a [inductive component] disposed on the central air chamber unit; and a substrate disposed on the inductive component. The present invention also provides an application method for integrating an overvoltage protection device for an inductor and a middle air chamber, comprising the steps of: connecting a circuit unit to a power supply unit; and paralleling an overvoltage protection device for integrating the inductor and the middle air chamber The circuit unit, wherein the integrated inductor and the intermediate air chamber overvoltage protection 200935700 device comprises: a middle air chamber unit, comprising: a first lower substrate, one surface of the first lower substrate is provided with an electrode layer and a first a trench, wherein the first trench is used to divide the electrode layer into a first electrode and a second electrode, and the first trench has a predetermined width; and a first trench is disposed under the first a second lower substrate on the substrate, the lower surface of the second lower substrate is provided with a pair of second trenches corresponding to the first trench, wherein the first trench and the second trench form a middle air chamber; An inductive component on the central air chamber unit; and a substrate disposed on the inductive component. The present invention has the following beneficial effects: the overvoltage protection device for integrating the inductor and the middle air chamber and the application thereof, which can integrate the inductor and the middle air chamber into an overvoltage protection unit to protect the overvoltage The unit and the circuit to be protected are connected in parallel to the transmission line in advance, thereby preventing the circuit unit to be protected from being affected by the surge, static electricity, and the like. For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings. ❹ [Embodiment] Referring to the first figure, the present invention provides an overvoltage protection device 1 characterized in that the overvoltage protection device 1 integrates an inductor and a middle air chamber, and the overvoltage protection device 1 can be applied to a transmission. The wire is used to solve the problem of solving the static electricity problem. The overvoltage protection device 1 includes: a middle air chamber unit 10; an inductive component 20 disposed on the middle air chamber unit 10; and a magnetic component 20 disposed on the inductive component 20 The upper substrate 30; that is, the overvoltage protection device 8 200935700 is a multi-layer structure to integrate the inductance and the middle air gap in a single component. ❹ Each unit above will be described in detail below. Referring to FIG. 1 , the middle air chamber unit includes a first-lower substrate and a first lower substrate 1 〇 2 , and the second lower substrate 1 〇 2 is superposed on the first lower substrate 1 0 1 . on. The first to the lower substrate 1 is provided with an electrode layer 3 and a first trench 1 〇 1 1 is formed, and the first trench 1 is formed by the electrode layer! The 〇3 is divided into a first electrode χ 〇 3 and a second electrode 1300; the first groove 1 Ό 1 is extended from the surface of the first to lower substrate 110 to the first lower substrate Inside, the fence 1 Q 1 1 has a width -w (see the second figure). The second lower substrate 2 is disposed on the first lower substrate 110, and the lower surface of the second lower substrate 2 is formed with a pair. The second groove 丄Q 2 i of the first groove iii should be referred to (refer to the second figure). Therefore, when the second lower substrate 丄〇2 is superposed on the first lower substrate i 0 1 , the second trench i 〇 2 丄 and the first trench 丄 Q ^ ^ can form a middle air chamber. To provide the function of static electricity protection. In addition, please refer to the second figure and the second figure A, the second groove i 〇 2 has a non-implementation. In the second A diagram, the second trench 丄〇2 丄 is the first to the lower substrate 1 Q 2 to form a through hole. That is, the present invention does not limit the depth of the second trench 1 0 2 1 extending into the second lower substrate 1 ; 2; the main function of the second trench 1 0 2 1 is to match the first trench 1 〇11 is formed to form an air chamber, and the air is present in the air chamber formed by the first squirrel 21 to provide an electrostatic discharge, specification or other requirement for the air discharge of the air supply. 2, and the middle air chamber can be adjusted according to the situation. And the depth of the rolling chamber can also be changed

此外,該第一電極丄〇 3丄I 型亦右吝插參#能採4 亥第二電極1 0 3 2之外 U有夕種^態樣。請茶考第 該第一下基板1()1之示意圖,樣之 二電極1 G 3 2靠近該第—溝槽 極1 0 3 1與該弟 ❹ 齊平之端面。另外嗜來者筮二Λ 1之一端均形成一 i之第Α圖’其為該第-下基板10 J二;=不意圖,且顯示該第-電極1031與 川與該第二雷極/二:’觀’該第-電極1 ;::別:广尖端a,而該第-溝槽m;i= 31與該第二電極1032之尖端A而 m *社不規則外觀。尖端A形成具有端點之外觀可 達成尖端放㈣功效,而更進—步提高靜電防護的效果。 ❹ 請復參考第-圖’在該中空氣室單元iq之上設置有一 ◦。在本實施财,該電感元件2 Q係為一立體 螺疋电感。該電感元件20包括-第-中基板20!以及一 设置於該第-中基板2 〇 1上之第二中基板2 〇 2,該第一 中基板2 G 1設有—第—環形電極層2 Q 3,該第二中基板 2 0 2設有一第二環形電極層2〇4以及一貫穿該第二中 基板2 Gj之第三電極層2 Q 5 ,其帽第—環形電極層2 〇 3、該第二環形電極層2 0 4以及該第三電極層2 0 5形 成立體螺旋狀電感結構。該第三電極唐2 0 5係先成形- 200935700 貫穿該第二中基板^ ^ % 〇 2之穿孔,再將導電材料成型於該穿 20!= Γ第三電極層2 0 5。再者,該電感元件 J (J上方再進一步設有一卜其也 • 0。 基板3 0’以保護該電感元件2 今第另下::二t製程上的考量’該第-下基板101、 基板1 ◦ 2、該第—中基板2 0 1、該第二令基板 2 土基板3〇具有相同面積尺寸;而該第一下基板 Π:弟二下基板1〇2、該第-中基板2〇1、該第 土 Q 2與遠上基板3 〇係為-絕緣材料或-鐵電 材料。該絕緣材料至少包㈣元素之氧化物,如氧化链 AL03)、鈦疋素之氧化物,如氧化鈦⑺〇2)或石夕元素 之氧化物,如氧切(Sl02)等氧化物材料,但不以上述為 :丄:外’該第一下基板1 0 1、該第二下基板1 0 2、該 弟-中基板2 0 1、該第二中基板2 〇 2與該上基板3 〇均 可為-積層式薄膜(m咖ayer thin film),且 ❹1〇士2與該第-中基板20工最佳為可增加感值的材料:再 者’遠電極層1 〇 3、該第-環形電極層2 〇 3、該第二環 形電極層204以及該第三電極層2〇5之材質係包括金 (An、)、銀(Ag)、鈀(Pd)、翻(pt)、鎢(w)、銅(叫 及上过元素之合金及上述元素之混合物所組成之群組。 • $請參考第四® ’其表示該電感元件2 〇之第二實施態 樣,。在本實施例中,該電感元件2 0係為一平面型電感g 0 ,該平面型電感2〇,包括一令基板2 0 1,以及一成 型於該中基板201’上之蛇紋電極2〇6。故本發明並不 11 200935700 限定該電感元件2 0之類型,其可為立體電感、平面電感或 其他形式之電感結構。而該中基板2 0 1’與該中基板2 0 1’之特性,如尺寸、材質等均與立體電感相同,在此不加 以贅述。 藉由該中空氣室單元1 0、該電感元件2 0以及該上基 板2 0所形成之層狀元件,即為本發明之過電壓保護裝置 1 ;該過電壓保護裝置1可應用於電路之突波防護及抗靜電 之功能,以下將針對該過電壓保護裝置1的應用方法及所達 ® 成的效果進行說明。 請參考第五圖,本發明係將該過電壓保護裝置1應用於 元件之保護,而第五圖中亦顯示出該過電壓保護裝置1之等 效電路方塊。該過電壓保護裝置1之應用步驟如下: 步驟(1):連接一電路單元2於一電源供應單元3。 步驟(2):並聯該整合電感與中空氣室之過電壓保護裝 置1與該電路單元2以提供該電路單元2過電壓保護之功 Q 能。該第一電極1 0 3 1與該第二電極1 0 3 2分別利用外 電極與該電感元件2 0之兩電極達成電性連接’再將該具有 外電極之過電壓保護裝置1並聯於該電路單元2,即可提供 該電路單元2 —過電壓以及突波之保護功能。該過電壓保護 裝置1之結構已揭露於前文,在此不再加以贅述。 ' 請參考第六圖,其為本發明之過電壓保護裝置1在實際 應用上針對元件保護所達成的具體實驗數據。實驗曲線X 表示在電路上僅利用電感進行靜電防護,可發現雖然單獨使 用電感時,其優點在於觸發電壓在小數值之靜電電壓時較 12 200935700 小,但是該觸發電壓會隨著靜電電壓的上升而增加;若單獨 利用中空氣室進行電路保護時,該觸發電壓維持為一定值 (實驗曲線γ),故在小數值之靜電電壓仍需要較大的觸發 電壓才會開啟該中空氣室之保護功能。相反地,在電路上並 聯一本發明所提出之過電壓保護裝置1,由實驗曲線Z則可 以發現,在較小之靜電電壓時,該過電壓保護裝置1之表現 類似單一電感,亦即只需要小數值之觸發電壓即可啟動該過 電壓保護裝置1 ;而在較大的靜電電壓時,該過電壓保護裝 ❿置1之特性又偏向於單一中空氣室,即觸發電壓並不會因為 靜電電壓的上升而增加,藉以增加該過電壓保護裝置1在高 靜電電壓的應用性。 另外’在進行南速糸統的南頻數據傳輸線路保護日牙5必 須特別注意靜電放電(Electrostatic Discharge, ESD)防護裝置 的電性特性。現有的各種防護裝置均能夠提供有效的靜電放 電保護功能,但不能以犧牲系統的信號完整性為代價。因 此,在把靜電放電防護裝置導入電路設計之前,必須對其電 容有所考慮。具有極低電容值的防護裝置能夠在提供靜電放 電保護功能,並同時保持高速數據信號的數據完整性,而本 案所具備之中空氣室結構則可視為一種低容值的裝置。 綜上所述,本發明具有下列諸優點: - 1、本發明提出之過電壓保護裝置1可整合電感與中空 氣室之結構,且將該過電壓保護裝置1裝設於電路中,可以 有效解決傳輸線的靜電問題。 13 200935700 2、另一方面,本發明之過電壓保護裝置1之特性相當 於過電壓保護/靜電放電保護(OVP/ESD)元件,且該過電 壓保護裝置1之氣隙結構為一低容值裝置,其可避免在高頻 訊號中產生衰減現象。 惟以上所述僅為本發明之較佳實施例,非意欲侷限本發 明之專利保護範圍,故舉凡運用本發明說明書及圖式内容所 為之等效變化,均同理皆包含於本發明之權利保護範圍内, 合予陳明。 ❹ 【圖式簡單說明】 第一圖係本發明之過電壓保護裝置之分解圖。 第二圖係本發明之過電壓保護裝置之中空氣室單元之第一實 施態樣侧視圖。 第二A圖係本發明之過電壓保護裝置之中空氣室單元之第二 實施態樣側視圖。 Q 第三圖係本發明之第一電極與第二電極之第一實施態樣示意 圖。 第三A圖係本發明之第一電極與第二電極之第二實施態樣示 意圖。 . 第四圖係本發明之過電壓保護裝置之第二實施例分解圖。 第五圖係本發明應用該過電壓保護裝置之電路方塊圖。 第六圖係本發明之過電壓保護裝置之過電壓保護功效數據 圖。 14 200935700 【主要元件符號說明】 1 過 電壓保護裝置 10 中 空氣室單元 1 0 1 第 一下基板 1 0 1 1 第 一溝槽 1 0 2 第 二下基板 1 0 2 1 第 二溝槽 1 0 3 電 極層 1 0 3 1 第 一電極 1 0 3 2 第 二電極 電感元件 2 0’ 平面型電感 2 0 1 第一中基板 2 0 1 1 2 3 中基板 2 0 2 第二中基板 2 0 3 第一環形電極層 2 0 4 第二環形電極層 2 0 5 第三電極層 2 0 6 蛇紋電極 15 1 0 上基板 2 2 電路單元 3 3 電源供應單元 A 尖端 W 預定寬度 X、Y、Z實驗曲線In addition, the first electrode 丄〇 3丄I type is also right 吝 参 # 能 能 能 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 Please refer to the schematic diagram of the first lower substrate 1 () 1 , and the second electrode 1 G 3 2 is close to the end surface of the first groove 1 1 3 3 and the dipole. In addition, the enthalpy of the enthalpy of the second Λ1 形成1 forms a second diagram of the i', which is the first-lower substrate 10 J 2; = not intended, and shows the first electrode 1031 and the second and the first lightning pole / Two: 'View' the first electrode 1;:: other: wide tip a, and the first groove m; i = 31 and the tip A of the second electrode 1032 and m * an irregular appearance. The tip A forms an appearance with an end point to achieve the effect of tipping (four), and further improves the effect of static electricity protection. ❹ Please refer to the figure-Fig. 'Set a 之上 above the air chamber unit iq. In this implementation, the inductive component 2 Q is a three-dimensional screw inductor. The inductive component 20 includes a first-middle substrate 20! and a second intermediate substrate 2 〇2 disposed on the first-middle substrate 2 〇1. The first intermediate substrate 2 G 1 is provided with a first-to-ring electrode layer 2 Q 3, the second intermediate substrate 220 is provided with a second ring electrode layer 2〇4 and a third electrode layer 2 Q 5 penetrating through the second intermediate substrate 2 Gj, and the cap-ring electrode layer 2 〇 3. The second ring electrode layer 504 and the third electrode layer 205 form a three-dimensional spiral inductor structure. The third electrode is formed by first forming - 200935700 through the perforation of the second intermediate substrate ^^% 〇 2, and then forming a conductive material on the through 20!= Γ third electrode layer 205. Furthermore, the inductive component J (J is further provided with a top surface of the substrate.) to protect the inductive component 2, and the second substrate is considered to be the second substrate. The first substrate 22, the second substrate 2 土2, and the second substrate 2 土 have the same area size; and the first lower substrate Π: the second substrate 〇2, the first-middle substrate 2〇1, the soil Q 2 and the upper substrate 3 are an insulating material or a ferroelectric material. The insulating material contains at least an oxide of an element (such as an oxidized chain AL03) and an oxide of titanium azide. For example, titanium oxide (7) 〇 2) or an oxide of the stone element, such as an oxygen material such as oxygen cut (S102), but not as described above: 丄: outer 'the first lower substrate 110, the second lower substrate 1 0 2, the younger-middle substrate 2 0 1 , the second intermediate substrate 2 〇 2 and the upper substrate 3 〇 can both be a laminated film (maka ayer thin film), and ❹ 1 gentleman 2 and the first The medium substrate 20 is preferably a material capable of increasing the inductance: further, 'the far electrode layer 1 〇 3 , the first ring electrode layer 2 〇 3 , the second ring electrode layer 204 , and the third electrode layer 2 The material of 〇5 includes a group of gold (An,), silver (Ag), palladium (Pd), turn (pt), tungsten (w), copper (called alloy of the upper element and a mixture of the above elements) Group. • Please refer to the fourth version 'which indicates the second embodiment of the inductor element 2 ,. In this embodiment, the inductor element 20 is a planar inductor g 0 , and the planar inductor 2 〇 〇 一 〇 一 一 一 一 一 2 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇 蛇Inductor or other form of inductance structure, and the characteristics of the middle substrate 2 0 1 ' and the middle substrate 2 0 1 ', such as size, material, etc., are the same as the three-dimensional inductance, and will not be described herein. The unit 10, the inductive element 20 and the layered element formed by the upper substrate 20 are the overvoltage protection device 1 of the present invention; the overvoltage protection device 1 can be applied to surge protection and antistatic of the circuit The function of the overvoltage protection device 1 and the following Please refer to the fifth figure. The present invention applies the overvoltage protection device 1 to the protection of components, and the fifth diagram also shows the equivalent circuit block of the overvoltage protection device 1. The application steps of the protection device 1 are as follows: Step (1): connecting a circuit unit 2 to a power supply unit 3. Step (2): paralleling the overvoltage protection device 1 of the integrated inductor and the middle air chamber with the circuit unit 2 Providing the Q energy of the overvoltage protection of the circuit unit 2. The first electrode 1 0 3 1 and the second electrode 1 0 3 2 are electrically connected to the electrodes of the inductive component 20 by the external electrode respectively. The overvoltage protection device 1 having an external electrode is connected in parallel to the circuit unit 2, thereby providing the protection function of the circuit unit 2 for overvoltage and surge. The structure of the overvoltage protection device 1 has been disclosed in the foregoing and will not be further described herein. Please refer to the sixth figure, which is the specific experimental data of the overvoltage protection device 1 of the present invention for component protection in practical applications. The experimental curve X indicates that only the inductor is used for electrostatic protection on the circuit. It can be found that although the inductor is used alone, the advantage is that the trigger voltage is smaller than the 12200935700 when the electrostatic voltage is small, but the trigger voltage will rise with the electrostatic voltage. And increase; if the circuit is protected by the air chamber alone, the trigger voltage is maintained at a certain value (experimental curve γ), so the electrostatic voltage of a small value still needs a large trigger voltage to open the protection of the air chamber. Features. Conversely, in parallel with the overvoltage protection device 1 proposed by the invention, it can be found from the experimental curve Z that the performance of the overvoltage protection device 1 is similar to a single inductor at a small electrostatic voltage, that is, only The overvoltage protection device 1 can be activated by a small value of the trigger voltage; and at a large electrostatic voltage, the overvoltage protection device 1 is biased toward a single central air chamber, that is, the trigger voltage is not The increase in electrostatic voltage is increased to increase the applicability of the overvoltage protection device 1 at a high electrostatic voltage. In addition, the protection of the eclipse 5 of the South-frequency data transmission line of the Southspeed system must pay special attention to the electrical characteristics of the Electrostatic Discharge (ESD) protection device. All of the existing guards provide effective ESD protection, but not at the expense of the signal integrity of the system. Therefore, the capacitance must be considered before introducing the ESD protection device into the circuit design. Guards with extremely low capacitance values provide electrostatic discharge protection while maintaining the data integrity of high-speed data signals, and the air chamber structure in this case can be considered a low-capacity device. In summary, the present invention has the following advantages: - 1. The overvoltage protection device 1 of the present invention can integrate the structure of the inductor and the middle air chamber, and the overvoltage protection device 1 is installed in the circuit, which can be effective Solve the static problem of the transmission line. 13 200935700 2. On the other hand, the overvoltage protection device 1 of the present invention has characteristics equivalent to an overvoltage protection/electrostatic discharge protection (OVP/ESD) component, and the air gap structure of the overvoltage protection device 1 is a low capacitance value. A device that avoids attenuation in high frequency signals. The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, the equivalents of the present invention and the equivalents of the drawings are all included in the present invention. Within the scope of protection, Chen Ming is awarded. ❹ [Simplified description of the drawings] The first figure is an exploded view of the overvoltage protection device of the present invention. The second drawing is a side view of a first embodiment of an air chamber unit in the overvoltage protection device of the present invention. Figure 2A is a side elevational view of a second embodiment of the air chamber unit of the overvoltage protection device of the present invention. Q is a schematic view of a first embodiment of the first electrode and the second electrode of the present invention. The third A diagram is a second embodiment of the first electrode and the second electrode of the present invention. The fourth figure is an exploded view of a second embodiment of the overvoltage protection device of the present invention. The fifth figure is a circuit block diagram of the overvoltage protection device of the present invention. Fig. 6 is a graph showing the overvoltage protection efficiency data of the overvoltage protection device of the present invention. 14 200935700 [Description of main components] 1 Over-voltage protection device 10 Air chamber unit 1 0 1 First lower substrate 1 0 1 1 First trench 1 0 2 Second lower substrate 1 0 2 1 Second trench 1 0 3 electrode layer 1 0 3 1 first electrode 1 0 3 2 second electrode inductance element 2 0' planar inductor 2 0 1 first middle substrate 2 0 1 1 2 3 medium substrate 2 0 2 second middle substrate 2 0 3 First ring electrode layer 2 0 4 second ring electrode layer 2 0 5 third electrode layer 2 0 6 serpentine electrode 15 1 0 upper substrate 2 2 circuit unit 3 3 power supply unit A tip W predetermined width X, Y, Z Experimental curve

Claims (1)

200935700 十、申請專利範圍: 1、 一種整合電感與中空氣室之過電壓保護裝置,包括: 一中空氣室單元,其包括: 一第一下基板,該第一下基板之一表面設有一電極層 以及一第一溝槽,其中該第一溝槽係用以將該電極 層區分為一第一電極以及一第二電極,且該第一溝 槽具有一預定寬度;以及 一設置於該第一下基板上之第二下基板,該第二下基 ® 板之下表面設有一對應該第一溝槽之第二溝槽,其 中該第一溝槽與該第二溝槽形成一中空氣室; 一設置於該中空氣室單元上之電感元件;以及 一設置於該電感元件上之上基板。 2、 如申請專利範圍第1項所述之整合電感與中空氣室之過 電壓保護裝置,其中該電感元件包括一第一中基板以及 一設置於該第一中基板上之第二中基板,該第一中基板 設有一第一環形電極層,該第二中基板設有一第二環形 電極層以及一貫穿該第二中基板之第三電極層,其中該 第一環形電極層、該第二環形電極層以及該第三電極層 形成一立體螺旋狀電感結構。 . 3、如申請專利範圍第2項所述之整合電感與中空氣室之過 . 電壓保護裝置,其中該第一下基板、該第二下基板、該 第一中基板、該第二中基板與該上基板具有相同面積尺 寸0 16 200935700 4、 如申請專利範圍第2項所述之整合電感與中空氣室之過 電壓保護裝置,其中該第一下基板、該第二下基板、該 第一中基板、該第二中基板與該上基板係為一絕緣材料 或一鐵電材料。 5、 如申請專利範圍第4項所述整合電感與中空氣室之過電 壓保護裝置,其中該絕緣材料至少包括鋁元素之氧化 物、鈦元素之氧化物或梦元素之氧化物。 6、 如申請專利範圍第2項所述之整合電感與中空氣室之過 ❹ 電壓保護裝置,其中該電極層、該第一環形電極層、該 第二環形電極層以及該第三電極層之材質係選自金 (Au)、銀(Ag)、鈀(Pd)、鉑(Pt)、鎢(W)、銅(Cu) 及其合金及其混合物所組成之群組。 7、 如申請專利範圍第1項所述之整合電感與中空氣室之過 電壓保護裝置,其中該電感元件係為一立體電感元件或 一平面電感元件。 8、 如申請專利範圍第1項所述之整合電感與中空氣室之過 ® 電壓保護裝置,其中該第二溝槽係貫穿該第二下基板。 9、 如申請專利範圍第1項所述之整合電感與中空氣室之過 電壓保護裝置,其中該第一電極以及該第二電極鄰近該 第一溝槽之一端均形成一尖端。 1 0、一種整合電感與中空氣室之過電壓保護裝置之應用方 法,包括步驟如下: 連接一電路單元於一電源供應單元;以及 並聯一整合電感與中空氣室之過電壓保護裝置與該電 17 200935700 路單元,其中該整合電感與中空氣室之過電壓保護裝 置包括: . 一中空氣室單元,其包含: 一第一下基板,該第一下基板之一表面設有一電極 層以及一第一溝槽,其中該第一溝槽係用以將該 電極層區分為一第一電極以及一第二電極,且該 第一溝槽具有一預定寬度;以及 一設置於該第一下基板上之第二下基板,該第二下 _ 基板之下表面設有一對應談第一溝槽之第二溝 槽,其中該第一溝槽與該第二溝槽形成一中空氣 室; 一設置於該中空氣室單元上之電感元件;以及 一設置於該電感元件上之上基板。 1 1、如申請專利範圍第1 0項所述之整合電感與中空氣室 之過電壓保護裝置之應用方法’其中該電感元件包括一 第一中基板以及一設置於該第一中基板上之第二中基 ® 板,該第一中基板設有一第一環形電極層,該第二中基 板設有一第二環形電極層以及一貫穿該第二中基板之 第三電極層,其中該第一環形電極層、該第二環形電極 層以及該第三電極層形成一立體螺旋狀電感結構。 1 2、如申請專利範圍第1 1項所述之整合電感與中空氣室 之過電壓保護裝置之應用方法,其中該第一下基板、該 第二下基板、該第一中基板、該第二中基板與該上基板 具有相同面積尺寸。 18 200935700 1 3、如申請專利範圍第1 1項所述之整合電感與中空氣室 之過電壓保護裝置之應用方法,其中該第一下基板、該 第二下基板、該第一中基板、該第二中基板與該上基板 係為一絕緣材料或一鐵電材料。 1 4、如申請專利範圍第1 3項所述整合電感與中空氣室之 過電壓保護裝置之應用方法,其中該絕緣材料至少包括 銘元素之氧化物、鈦元素之氧化物或叾夕元素之氧化物。 1 5、如申請專利範圍第1 1項所述之整合電感與中空氣室 ❹ 之過電壓保護裝置之應用方法,其中該電極層、該第一 環形電極層、該第二環形電極層以及該第三電極層之材 質係選自金(Au )、銀(Ag )、鈀(Pd )、鉑(Pt )、鎢 (W)、銅(Cu)及其合金及其混合物所組成之群組。 1 6、如申請專利範圍第1 0項所述之整合電感與中空氣室 之過電壓保護裝置之應用方法,其中該電感元件係為一 立體電感元件或一平面電感元件。 1 7、如申請專利範圍第1 0項所述之整合電感與中空氣室 ® 之過電壓保護裝置之應用方法,其中該第二溝槽係貫穿 該第二下基板。 1 8、如申請專利範圍第1 0項所述之整合電感與中空氣室 之過電壓保護裝置之應用方法,其中該第一電極以及該 第二電極鄰近該第一溝槽之一端均形成一尖端。 19200935700 X. Patent application scope: 1. An overvoltage protection device for integrating an inductor and a middle air chamber, comprising: a middle air chamber unit, comprising: a first lower substrate, an electrode is disposed on one surface of the first lower substrate And a first trench, wherein the first trench is used to divide the electrode layer into a first electrode and a second electrode, and the first trench has a predetermined width; and a first groove is disposed in the first a second lower substrate on the substrate, the lower surface of the second lower substrate is provided with a pair of second trenches corresponding to the first trench, wherein the first trench and the second trench form a middle air a device; an inductive component disposed on the central air chamber unit; and a substrate disposed on the inductive component. 2. The overvoltage protection device for integrating the inductor and the middle air chamber according to claim 1, wherein the inductor component comprises a first intermediate substrate and a second intermediate substrate disposed on the first intermediate substrate, The first middle substrate is provided with a first ring electrode layer, the second middle substrate is provided with a second ring electrode layer and a third electrode layer penetrating the second middle substrate, wherein the first ring electrode layer, the first The second ring electrode layer and the third electrode layer form a three-dimensional spiral inductor structure. 3. The voltage-protecting device, wherein the first lower substrate, the second lower substrate, the first intermediate substrate, and the second intermediate substrate are the voltage-protecting device of the integrated inductor and the middle air chamber according to claim 2; An over-voltage protection device for integrating an inductor and a middle air chamber according to the second aspect of the invention, wherein the first lower substrate, the second lower substrate, the first The middle substrate, the second middle substrate and the upper substrate are an insulating material or a ferroelectric material. 5. The over-voltage protection device for integrating the inductor and the middle air chamber according to claim 4, wherein the insulating material comprises at least an oxide of aluminum element, an oxide of titanium element or an oxide of a dream element. 6. The overvoltage protection device for integrated inductor and middle air chamber according to claim 2, wherein the electrode layer, the first ring electrode layer, the second ring electrode layer, and the third electrode layer The material is selected from the group consisting of gold (Au), silver (Ag), palladium (Pd), platinum (Pt), tungsten (W), copper (Cu), alloys thereof, and mixtures thereof. 7. The overvoltage protection device for integrated inductor and middle air chamber according to claim 1, wherein the inductance component is a three-dimensional inductance component or a planar inductance component. 8. The integrated inductor and middle air chamber over voltage protection device of claim 1, wherein the second trench extends through the second lower substrate. 9. The overvoltage protection device of the integrated inductor and the intermediate air chamber according to claim 1, wherein the first electrode and the second electrode form a tip adjacent to one end of the first trench. 10. An application method for an overvoltage protection device integrating an inductor and a middle air chamber, comprising the steps of: connecting a circuit unit to a power supply unit; and connecting an overvoltage protection device for integrating the inductor and the middle air chamber with the electric The circuit unit of the 200935700, wherein the integrated voltage and the over-voltage protection device of the middle air chamber comprises: a middle air chamber unit, comprising: a first lower substrate, an electrode layer and an electrode layer on one surface of the first lower substrate a first trench, wherein the first trench is used to divide the electrode layer into a first electrode and a second electrode, and the first trench has a predetermined width; and a first lower substrate is disposed on the first trench a second lower substrate, the lower surface of the second lower substrate is provided with a second trench corresponding to the first trench, wherein the first trench and the second trench form a middle air chamber; An inductive component on the central air chamber unit; and a substrate disposed on the inductive component. 1 . The application method of an overvoltage protection device for integrating an inductor and a middle air chamber according to claim 10, wherein the inductor component comprises a first middle substrate and a first medium substrate a second intermediate substrate, the first intermediate substrate is provided with a first annular electrode layer, the second intermediate substrate is provided with a second annular electrode layer and a third electrode layer penetrating the second intermediate substrate, wherein the first A ring electrode layer, the second ring electrode layer and the third electrode layer form a three-dimensional spiral inductor structure. The application method of the integrated inductor and the intermediate air chamber overvoltage protection device according to the above-mentioned patent application, wherein the first lower substrate, the second lower substrate, the first intermediate substrate, the first The second medium substrate has the same area size as the upper substrate. 18 200935700 1 3, the application method of the integrated inductor and the intermediate air chamber overvoltage protection device as described in claim 11, wherein the first lower substrate, the second lower substrate, the first intermediate substrate, The second intermediate substrate and the upper substrate are an insulating material or a ferroelectric material. 1 . The application method of the overvoltage protection device for integrating the inductor and the middle air chamber according to claim 13 of the patent application scope, wherein the insulating material comprises at least an oxide of the element element, an oxide of the titanium element or an element of the cerium element. Oxide. The application method of the overvoltage protection device for integrating the inductor and the middle air chamber according to the above-mentioned patent application, wherein the electrode layer, the first ring electrode layer, the second ring electrode layer and The material of the third electrode layer is selected from the group consisting of gold (Au), silver (Ag), palladium (Pd), platinum (Pt), tungsten (W), copper (Cu), alloys thereof, and mixtures thereof. . The application method of the overvoltage protection device for integrating the inductor and the middle air chamber as described in claim 10, wherein the inductance component is a three-dimensional inductance component or a planar inductance component. The application method of the integrated inductor and the intermediate air chamber ® overvoltage protection device according to claim 10, wherein the second trench is penetrated through the second lower substrate. The application method of the overvoltage protection device for integrating the inductor and the middle air chamber according to claim 10, wherein the first electrode and the second electrode are adjacent to one end of the first trench. Cutting edge. 19
TW97104504A 2008-02-05 2008-02-05 over voltage protecting device and its application TW200935700A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409918B (en) * 2010-03-10 2013-09-21 Wei Kuang Feng Multi-layer semiconductor element package structure with surge-proof function and method of manufacturing the same
TWI417994B (en) * 2010-04-06 2013-12-01 Zowie Technology Corp Semiconductor element package structure with protection function

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409918B (en) * 2010-03-10 2013-09-21 Wei Kuang Feng Multi-layer semiconductor element package structure with surge-proof function and method of manufacturing the same
TWI417994B (en) * 2010-04-06 2013-12-01 Zowie Technology Corp Semiconductor element package structure with protection function

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