200930184 九、發明說明 【發明所屬之技術領域】 * 本發明係關於光微影方法，詳而言 * 曝光圖案而在形成於第一感光性材料上 上進行聚光掃描以直接繪製第二圖案後 二圖案作爲光罩而對前述第一感光性材 將前述第二感光性材料剝離後將前述第 © 顯影，以將作爲阻焊膜的第一圖案形成 成方法。 【先前技術】 印刷配線板，是將電阻、電容等的 ' 後，在零件間用配線連接來構成電路。 導體電路圖案的焊接區上，而除了該焊 路部分是用永久保護膜的阻焊膜來被覆 © 阻焊膜，是用來防止焊接電子零件 要的部分，且能避免導體電路部分直接 氧化。此外，阻焊膜也具備改善電氣特 絕緣性等的作用。 爲了將工件表面的一部分用期望的 未被覆蓋的部分實施接下來的處理，所 劑（resist)。印刷配線板所使用的阻劑 性的光硬化樹脂。除此以外的阻劑是包 阻焊劑、鍍敷處理用的抗鑛劑、蝕刻處 之是關於：根據被 的第二感光性材料 實施顯影，以該第 料進行批式曝光， 一感光性材料實施 於基板上之圖案形 電子零件予以組裝 電子零件是裝載於 接區以外的導體電 〇 時焊料附著於不必 曝露於空氣而產生 性及維持導體間的 圖案覆蓋，以僅對 採用的材料稱爲阻 ’主要爲具有感光 括：焊接處理用的 理用的抗蝕劑。 -5- 200930184 爲了在印刷配線板、半導體配線基板、液晶配線基板 等各種的配線基板上形成圖案，以往是在基板上形成感光 * 性的液狀光阻或乾膜光阻後，透過光罩來進行曝光。 - 在製造配線基板時，期待能以低價格及短交期來提供 高精度的配線，而依基板種類的不同，經常面臨多品種少 量生產及多品種彈性量生產的情況，如此每次都必須製作 對應的光罩，而導致成本上昇及交期延遲。因此，能同時 Ο 實現多品種彈性量、高精度、低成本之無光罩曝光技術， 受到強烈的要求。 這種無光罩直接繪製曝光技術，由於不用製造光罩， _ 不僅能大幅節省光罩製造設備費用、材料費，且能縮短製 造光罩所花費的時間（前置時間）而製造出印刷配線基板。 再者，無光罩直接繪製曝光技術可在檢測基板的變形及彎 曲量以校正其位置的狀態下進行曝光，因此能實現高精度 的對準。 © 就進行無光罩曝光的第1方法而言，是使用大功率的 雷射光和多面鏡，藉由掃描雷射光來在基板上直接繪製圖 案的方法。該方法適用於將較粗略的圖案進行大面積的繪 製，因此能用簡單且便宜的裝置來構成。 就進行無光罩曝光的第2方法而言，如專利文獻1(曰 本特開平1 1 -320968號公報）所記載，是使用液晶或DMD( 數位微反射鏡裝置，Digital Micro-Mirror Device)等的2維 空間光調變元件來產生2維圖案，利用投影透鏡將該圖案 直接繪製於基板上的方法。依據此方法可進行微細圖案的 -6- 200930184 繪製。這種2維光調變的特徵之2維繪製，若增大光強度可 進一步提昇繪製速度，而在專利文獻2(日本特開2 002_ ’ 182157號公報）及專利文獻3(日本特開2004-157219號公報） . 已提出光強度增大光學系統。 然而在上述第1方法’要進行大面積且高精細的繪製 會有困難’又想要縮短生產時間則必須使用大功率的雷射 光’如此會造成裝置昂貴、運轉成本上昇。 © 此外，上述第2方法所使用之2維光調變元件的耐久性 和壽命，除了取決於入射光強度以外，還和其波長有關。 因此，在適用於無光罩曝光技術的光強度區域，越靠近入 射波長短的紫外光區域（未達400nm)，光調變元件發生錯 誤動作及缺陷的機率越大，或是發生致命故障之使用壽命 有變短的傾向。因此，在朝2維光調變元件射入紫外光的 情況下，必須限制其光強度而造成曝光時間變得長時間化 ，或是使用比紫外光的波長更長之可見光（400〜8 00nm)乃 © 至紅外光（超過8 00nm)。 另一方面，習知之使用光罩的曝光裝置所採用的水銀 燈光源，在i線（365nm)、h線（4 0 5nm)、g線（436nm)具有 強的波長光譜分布。經常應用於液狀光阻的曝光之金屬鹵 素燈也是，以高效率的放射i線附近的光爲主要規格。用 來形成配線的曝光技術所使用之感光性材料，基於量產性 及作業性的觀點是將其組成設計成：所照射的光的波長越 短其感度越高，而在可見光區域形成低感度。一般而言’ 用水銀明線之i線進行曝光的情況，可實現良好的圖案化 200930184 在進行無光罩曝光的情況，使用水銀燈作爲光源並不 • 是不可能的，但水銀燈難以獲得高效率且高指向性的曝光 . 照明光。 亦即，對於無光罩曝光的光調變手段而言，長波長的 可見光比短波長的紫外光更合適。因此，要同時實現曝光 的高產能化和高精細化是有困難的。 © 爲了提昇無光罩曝光的曝光產能，已開發出適用於使 用可見光光源的無光罩曝光裝置之光阻。該等光阻，在可 見光至紅外光區域具有感光區，即使在進行無光罩曝光的 情況仍能維持良好的曝光產能。然而，這些使用使用可見 光光源的無光罩曝光專用的光阻，由於無法利用一般用紫 外光感光的光阻的情況所使用的黃光室，而必須利用暗室 或紅光室，因此在量產現場必須改變基板製造條件，且比 起在紫外光具有感光區的汎用材料，其價格更高而造成運 © 轉成本變高。 除了上述爲了專用於可見光光源而開發出的光阻以外 ，還有其他在可見光區域具有感光區的感光性材料。例如 專利文獻4(日本特開2007-2 42 371號公報）和專利文獻5(日 本特開2004-221564號公報）所揭示的含有鹵化銀乳劑層之 銀鹽相片感光性材料（以下稱鹵化銀材），即使是使用可見 光光源的無光罩曝光裝置也能以低曝光量進行均一圖案的 曝光。然而這種感光性材料，由於是屬於電磁波遮蔽材、 觸控面板用途的導電性材料，並無法作爲印刷配線板用的 -8- 200930184 絕緣材之阻焊劑來使用。 此外，對於使用半導體雷射作爲光源之光罩直接繪製 • 曝光裝置，比起抗鏟劑和抗蝕劑等的其他感光性材料，阻 . 焊劑的的感度特別低，因此曝光產能非常低。 隨著電子零件的小型化、高密度化，焊接部分的焊墊 尺寸和節距逐年變小，在阻焊膜的曝光步驟，其解析度和 形成於焊墊間的圖案的定位精度等變得很重要。因此，在 〇 阻焊膜曝光步驟，宜採用無光罩曝光。 在阻焊膜的曝光步驟，若無法獲得充分的硬化，在曝 光後的顯影步驟阻焊膜表面容易被顯影液侵蝕，可能造成 印刷配線板無法獲得必要的性能。在將曝光量加大來生產 印刷配線板的情況，不僅曝光圖案的精度會明顯降低，且 ' 生產步驟所花費的時間增加，而會對生產性造成不良影響 。因此，期望能提供一種曝光方法，即使在低曝光量下仍 能以定位精度良好的方式來形成高解析度的圖案。200930184 IX. INSTRUCTION DESCRIPTION OF THE INVENTION [Technical Field to Be Invented] * The present invention relates to a photolithography method, in detail, * exposing a pattern and performing condensed scanning on a first photosensitive material to directly draw a second pattern The second pattern is used as a mask to peel off the second photosensitive material from the first photosensitive material, and the first image is developed to form a first pattern as a solder resist film. [Prior Art] A printed wiring board is formed by connecting resistors, capacitors, etc., and wiring them between parts. The soldering circuit pattern is soldered on the soldering area except that the soldering portion is covered with a solder resist film of a permanent protective film. The solder resist film is used to prevent soldering of the electronic component and to prevent direct oxidation of the conductor circuit portion. Further, the solder resist film also has an effect of improving electrical insulation properties and the like. In order to carry out the subsequent treatment with a portion of the surface of the workpiece with the desired uncovered portion, a resist is applied. A resistive photocurable resin used in printed wiring boards. The other resist is a solder resist, an anti-mineral agent for the plating treatment, and the etching is performed by performing development on the second photosensitive material, batch exposure using the first material, and a photosensitive material. The patterned electronic component is mounted on the substrate to be assembled. The electronic component is mounted on the conductor of the contact area, and the solder adheres to the pattern which is not required to be exposed to the air and maintains the pattern between the conductors, so as to be used only for the material used. The resistance is mainly a photosensitive resist: a resist for the soldering process. -5- 200930184 In order to form a pattern on various wiring boards such as printed wiring boards, semiconductor wiring boards, and liquid crystal wiring boards, conventionally, a photosensitive liquid photoresist or dry film photoresist is formed on a substrate, and then the mask is passed through the mask. To expose. - When manufacturing wiring boards, we expect to provide high-precision wiring at low prices and short delivery times. Depending on the type of substrate, we often face a large number of small-scale production and multi-variety elastic production. Produce the corresponding mask, resulting in increased costs and delays in delivery. Therefore, it is possible to achieve a multi-varietal elastic quantity, high precision, and low cost maskless exposure technology at the same time, which is strongly demanded. This kind of matless direct drawing exposure technology, because it does not need to manufacture a photomask, _ not only can greatly reduce the cost of mask manufacturing equipment, material costs, and can shorten the time (lead time) required to manufacture the mask to produce printed wiring. Substrate. Further, the non-mask direct drawing exposure technique can perform exposure in a state where the deformation and the amount of bending of the substrate are detected to correct the position thereof, so that high-precision alignment can be realized. © For the first method of maskless exposure, a method of directly drawing a pattern on a substrate by scanning laser light using high-power laser light and a polygon mirror. This method is suitable for drawing a rougher pattern over a large area, and thus can be constructed with a simple and inexpensive device. In the second method, the liquid crystal or the DMD (Digital Micro-Mirror Device) is used as described in the Japanese Patent Publication No. Hei. A two-dimensional spatial light modulation element that produces a two-dimensional pattern, and the pattern is directly drawn on the substrate by a projection lens. According to this method, -6-200930184 drawing of fine patterns can be performed. The two-dimensional rendering of the characteristics of the two-dimensional optical modulation can further increase the drawing speed by increasing the light intensity, and Patent Document 2 (Japanese Patent Laid-Open No. 2 002 _ 182 157) and Patent Document 3 (Japanese Patent Laid-Open No. 2004) -157219. A light intensity increasing optical system has been proposed. However, in the first method described above, it is difficult to perform large-area and high-definition drawing. In order to shorten the production time, it is necessary to use high-power laser light. This causes the apparatus to be expensive and the running cost to rise. © In addition, the durability and life of the two-dimensional optical modulation element used in the second method described above depend on the incident light intensity and its wavelength. Therefore, in the light intensity region suitable for the maskless exposure technique, the closer to the ultraviolet light region (below 400 nm) where the incident wavelength is short, the greater the probability that the optical modulation component will malfunction and the defect, or the fatal failure occurs. The service life has a tendency to become shorter. Therefore, in the case where the two-dimensional optical modulation element is incident on the ultraviolet light, it is necessary to limit the light intensity to cause the exposure time to become longer, or to use visible light having a longer wavelength than the ultraviolet light (400 to 800 nm). ) is © to infrared light (more than 800 nm). On the other hand, the mercury lamp source used in the conventional exposure apparatus using a photomask has a strong wavelength spectrum distribution on the i-line (365 nm), the h-line (405 nm), and the g-line (436 nm). A metal halide lamp that is often used for exposure to liquid photoresist is also a main specification for light in the vicinity of a highly efficient radiation i-line. The photosensitive material used in the exposure technique for forming wiring is based on the viewpoint of mass productivity and workability, and the composition thereof is designed such that the shorter the wavelength of the irradiated light, the higher the sensitivity, and the lower the sensitivity in the visible light region. . Generally speaking, the exposure of the i-line of the mercury bright line can achieve good patterning. 200930184 In the case of maskless exposure, it is not possible to use a mercury lamp as a light source, but it is difficult to obtain high efficiency of the mercury lamp. And high directivity exposure. Illumination light. That is, for a light modulation means without a reticle exposure, long-wavelength visible light is more suitable than short-wavelength ultraviolet light. Therefore, it is difficult to achieve high productivity and high definition of exposure at the same time. © In order to increase the exposure productivity of the maskless exposure, a photoresist for a maskless exposure device using a visible light source has been developed. These photoresists have a photosensitive region in the visible light to infrared region, and maintain good exposure productivity even in the case of maskless exposure. However, these masks that use a maskless exposure using a visible light source are in mass production because they cannot utilize the yellow light chamber used in the case of ultraviolet light-sensitive photoresist, and must use a dark room or a red light chamber. The substrate manufacturing conditions must be changed on site, and the price is higher than that of a general-purpose material having a photosensitive region in ultraviolet light, resulting in a higher cost of transportation. In addition to the photoresist developed in order to be dedicated to a visible light source, there are other photosensitive materials having a photosensitive region in the visible light region. For example, a silver salt photo-sensitive material containing a silver halide emulsion layer (hereinafter referred to as silver halide) disclosed in Patent Document 4 (Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. 2007-221564) The material can be exposed to a uniform pattern with a low exposure amount even in a maskless exposure apparatus using a visible light source. However, such a photosensitive material is a conductive material that is used for electromagnetic wave shielding materials and touch panels, and cannot be used as a solder resist for insulating materials of printed wiring boards -8-200930184. In addition, the direct exposure of the reticle using a semiconductor laser as a light source is much less sensitive than the other photosensitive materials such as anti-smashing agents and resists, so the exposure productivity is very low. With the miniaturization and high density of electronic components, the pad size and pitch of the soldered portion become smaller every year. In the exposure step of the solder resist film, the resolution and the positioning accuracy of the pattern formed between the pads become Very important. Therefore, in the 阻 solder mask exposure step, it is preferable to use a maskless exposure. In the exposure step of the solder resist film, if sufficient hardening is not obtained, the surface of the solder resist film in the development step after exposure is easily eroded by the developer, which may cause the printed wiring board to fail to obtain the necessary performance. In the case where the exposure amount is increased to produce a printed wiring board, not only the accuracy of the exposure pattern is remarkably lowered, but also the time taken for the production step is increased, which adversely affects productivity. Therefore, it is desirable to provide an exposure method capable of forming a high-resolution pattern in a manner of good positioning accuracy even at a low exposure amount.
G 【發明內容】 在習知技術（專利文獻1至5)的任一者都沒有提到，對 於無光罩曝光裝置的可見光光源具有低感度的感光性材料 之阻焊膜’如何以高產能進行曝光來形成圖案的技術。 於是，本發明的目的是提供出：在實施無光罩曝光時 ，可滿足低成本化及短交期化的要求水準且具有高精度及 高曝光效率之圖案形成方法。 爲了達成上述目的，本發明的圖案形成方法，其特徵 -9- 200930184 在於含有： 將對可見光具有低感度而對能量射束（含有紫外光或 ' 近紫外光）具有高感度的第一感光性材料成膜於基板上的 ， 成膜步驟、將第二感光性材料（對可見光的感度比前述第 一感光性材料更高）形成於前述第一感光性材料上的形成 步驟、對前述第二感光性材料使用無光罩直接繪製曝光裝 置（照射前述可見光所構成的曝光用光）來繪製第二圖案之 〇 第一曝光步驟、將經由該繪製後的第二感光性材料利用顯 影液處理來形成第二圖案之第一顯影步驟、對於形成於前 述第一感光性材料上的前述第二感光性材料利用前述能量 射束（含有紫外光或近紫外光）進行批式照射以將前述第二 圖案轉印於前述第一感光性材料而進行第一圖案的曝光之 ' 第二曝光步驟、從在該第二曝光步驟曝光後的第一感光性 材料除去前述第二感光性材料的剝離步驟、將在該剝離步 驟殘留的第一感光性材料利用顯影液處理來形成前述第一 ❹ 圖案的第二顯影步驟。 又本發明較佳爲，在前述圖案形成方法中，前述第一 感光性材料是由感光性阻焊膜所形成，前述第二感光性材 料是具有鹵化銀層所構成的感光性材料層。 亦即，在利用第一感光性材料（對於無光罩直接繪製 曝光裝置所使用的可見光曝光用光具有低感度）來形成第 一圖案的圖案形成方法，藉由分成以下二個階段：在形成 於前述第一感光性材料上的對可見光曝光用光具有高感度 的第二感光性材料上的圖案繪製階段、對於前述第一感光 -10- 200930184 性材料利用能量射束的批式曝光來進行光硬化的階段’以 大幅縮減圖案繪製所花費的時間。 • 如此般，爲了改善阻焊膜用的第一感光性材料對無光 . 罩直接繪製曝光裝置所使用的可見光曝光用光的低感度’ 可在前述第一感光性材料上形成對可見光曝光用光具有高 感度的第二感光性材料（例如鹵化銀材料）。如前述般，前 述對於可見光曝光用光具有高感度的第二感光性材料，由 © 於無法使用黃光室而必須利用暗室或紅光室’且在量產現 場必須改變基板的製造條件，因此本手法是熟習此技術人 士完全意想不到的。 此外，作爲本發明的第二感光性材料，例如使用專利 文獻6(日本特開2003-77350號公報）所揭示的對波長4 50nm ' 的光不具感光性的材料的情況，可使用黃光室。 在前述基板上依序形成前述第一感光性材料及前述第 二感光性材料，第一感光性材料是選擇對無光罩直接繪製 © 曝光裝置的光源具有低感度的感光性材料，另一方面，第 二感光性材料是選擇具有高感度的感光性材料。第二感光 性材料較佳爲，具備非感光性的透明膜作爲支承體，且該 透明膜具有實施脫模處理後的脫模處理面。該透明膜，係 用來支承前述第二感光性材料之對可見光具有高感度的感 光性材料層（以下稱高感度感光層），且避免高感度感光層 用的顯影液接觸第一感光性材料，又能防止高感度感光層 和第一感光性材料的相互擴散，藉此可防止污染而避免感 光性材料發生感度變動。此外，脫模處理面的作用在於： -11 - 200930184 讓在接下來的步驟之第二感光性材料的剝離變容易’且將 剝離時產生之對第一感光性材料的污染予以降低。依第一 * 感光性材料的性質，脫模處理面並不是必須的。較佳爲， . 將依脫模處理面、透明膜、高感度感光層的順序而構成之 第二感光性材料，以脫模處理面接觸第一感光性材料的方 式在7(TC以下成膜於具有前述第一感光性材料的基板上。 這是爲了防止第一感光性材料發生熱硬化。此外，該脫模 © 處理面及該透明膜較佳爲透明的（全光線（可見光至紫外光 )的穿透率90%以上）。 對於無光罩曝光裝置的光源，將期望的曝光圖案經正 負反轉後的圖案用無光罩曝光裝置進行直接繪製。由於第 二感光性材料具有高感度，相較於將低感度的第一感光性 ' 材料進行直接圖案繪製的情況，可大幅提昇曝光效率。特 別是針對阻焊膜的曝光，本發明的效果是値得高度期待的 。阻焊膜，除了在用來裝載電子零件之焊接部分，是塗布 〇 或積層於印刷配線板的圖案全面。因此’用本發明的方法 將負型阻焊膜實施曝光的情況，由於僅繪製將被覆於基板 全面的圖案反轉後的圖案，故可縮小繪製面積，而能更進 一步的縮短無光罩直接繪製曝光裝置進行圖案繪製所花費 的時間。 第一感光性材料較佳爲，對於無光罩曝光裝置的光源 用之可見光曝光用光’其感度比第二感光性材料低2倍以 上。這時的感度是指感光性材料的硬化程度。較佳爲，藉 由在無光罩曝光裝置讓第二感光性材料硬化而進行圖案繪 -12- 200930184 製之最佳曝光量以上的光照射量，第一感光性材料的光硬 化才會開始進行。這是爲了在無光罩曝光裝置進行圖案繪 製時，避免第一感光性材料發生硬化，換言之，對於無光 • 罩曝光裝置的光源用的可見光曝光用光具有非常低感度的 感光性材料，特別適用於本發明。 第二感光性材料所必備的特徵爲，藉由圖案曝光及顯 影處理會產生穿透率變化。亦即，在成膜後至曝光前的時 點，對無光罩曝光裝置的光源之穿透率爲30%〜70%，曝光 及顯影後的全光線穿透率成爲1 0%以下。第二感光性材料 的感度，是依在無光罩曝光裝置進行繪製的前後之穿透率 _ 的變化量來決定。第二感光性材料經顯影所劃定出的圖案 ’是具有可遮蔽該照明光的特徵，若對第二感光性材料的 圖案和第一感光性材料同時進行全面照射，第二感光性材 料成爲光罩，而將利用無光罩曝光裝置直接繪製出的圖案 經正負反轉後的圖案繪製在第一感光性材料上。藉由使第 ® 二感光性材料密合於被加工層之低感度的第一感光性材料 ’能防止繞射等光學偏差的發生而進行曝光，又能排除氧 阻障的影響（感光性材料的感度降低的主要原因）。 將第二感光性材料剝離後，對低感度的第一感光性材 料進行顯影’即可在第一感光性材料上形成圖案。由於圖 案是用無光罩曝光裝置來繪製的，可期待解析度的提昇。 藉由實施本發明的圖案形成方法，在無光罩曝光裝置 進行圖案繪製時’可實現能滿足低成本化及短交期化的要 求水準之高精度且高曝光效率的圖案繪製。 -13- 200930184 此外，在印刷配線板用的阻焊膜的曝光步驟，可在維 持阻焊膜的電氣特性下進行高精度的對準曝光，且能大幅 縮短圖案繪製時間。 【實施方式】 以下使用圖式來說明本發明的圖案形成方法的實施形 態，但本發明並不侷限於此。 φ 首先，使用第1圖及第2圖來說明本發明的實施形態的 槪要。 本發明之圖案形成方法具備以下步驟：在基板5上進 行第一感光性材料3的成膜之步驟P1;在具有脫膜處理面 2b的透明膜2 a之與脫膜處理面2b的相反側的面上’進行 ' 對於可見光比第一感光性材料3具有更高感度的高感度感 光層（含有鹵化銀乳劑層的銀鹽相片感光性材料）1的成膜 以形成第二感光性材料6的步驟P2 ;將第二感光性材料6 Ο 積層於第一感光性材料3上以形成高感度感光層1的步驟 P3;用未圖示的無光罩直接繪製曝光裝置（照射主波長爲 405nm的h線的藍色半導體雷射7)在高感度感光層上直接 繪製圖案之曝光步驟P4;將高感度感光層1實施顯影以形 成繪製圖案1’的步驟P5;對於形成於高感度感光層1的繪 製圖案1’、第二感光性材料6以及第一感光性材料3同時進 行批式曝光之曝光步驟P6;將高感度感光層1的繪製圖案 1 ’及第二感光性材料6除去的剝離步驟P 7 ;將第一感光性 材料3實施顯影，以在基板5上形成將繪製圖案1’反轉後的 -14- 200930184 反轉圖案（目的之硬化後的阻焊膜圖案）3 ’的步驟P8。 又在第2圖中，4代表基板5上的導體部；7代表曝光步 • 驟P4所使用的無光罩直接繪製曝光裝置的第1曝光光源的 • 藍色半導體雷射，可射出主波長爲h線（波長405nm)之可 見光。8代表：從曝光步驟S6所使用的第2照射光源射出 之能量射束（在全射出能量中，以1%〜100%的強度來含有 3 5 0〜45 Onm的紫外光或近紫外光）。 〇 作爲無光罩直接繪製曝光裝置（未圖示），例如包括： 以射出可見光的藍色半導體雷射爲第1曝光光源，使用大 功率的雷射光和多面鏡來掃描雷射光以在基板上直接繪製 圖案的裝置；使用液晶或DMD(數位微反射鏡裝置）等的2 維空間光調變元件來產生2維圖案，利用投影透鏡將該圖 " 案直接繪製於基板上的裝置。 接著詳細說明各個步驟。 本發明所使用的第一感光性材料3，是配線基板製造 © 用的負型i線用感光性材料，在配線基板的製程主要照射 3 5 0〜4 5 Onm的紫外光~近紫外光，以進行光微影加工。該 感光性材料3雖有各式各樣的目的及用途，但將印刷配線 基板上之除焊接區以外的導體電路部分以永久保護膜的方 式進行被覆的阻焊膜，由於在使用藍色半導體雷射作爲第 1曝光光源之無光罩曝光裝置進行繪製時，其曝光效率特 別差，因此對於本發明可獲得良好的效果。 此外，第3圖係顯示，對本發明的圖案形成方法所使 用的高感度感光層1及第一感光性材料3照射主波長爲h線 -15- 200930184 (波長40 5 nm)的藍色半導體雷射光時的硬化舉動（曝光量和 顯影後的感光性材料的膜厚的關係）之一實施例。可作爲 ' 第一感光性材料3之感光性材料’是藉由讓高感度感光層1 • 完全硬化的曝光量以上的光照射量才會開始進行硬化的材 料。在曝光步驟P4進行高感度感光層1的繪製時，照明光 透過中間層（透明膜2a及脫模處理面2b)而到達第一感光性 材料膜3時，若第一感光性材料3的感度接近高感度感光層 © 1的感度，第一感光性材料3也會進行曝光硬化。 在本發明，爲了在曝光步驟P4利用無光罩曝光裝置 在高感度感光層1上繪製反轉圖案（對於在第一感光性材料 3最終形成的期望圖案呈正負反轉的圖案），在將高感度感 光層1實施曝光時，若第一感光性材料3也同樣的進行硬化 ，則可能無法獲得期望的圖案。因此，在曝光步驟P4， 第一感光性材料3的硬化開始時點的曝光量，必須比高感 度感光層1的硬化終了時點的曝光量更大，因此高感度感 ® 光層1和第一感光性材料3較佳爲，在無光罩曝光裝置進行 圖案繪製前，對於從無光罩曝光裝置的第1曝光光源射出 的曝光波長（主波長爲h線）其感度有2倍以上的差距，其 差距越大越適合本發明。 本發明所使用的第一感光性材料3的形態，不論是乾 膜狀或液狀皆可’在任一者的情況下，只要在配線基板等 的被曝光物的表面能用既定方法進行適當的成膜即可。步 驟P1之在基板上進行第一感光性材料3的成膜的方法，並 沒有特別的限定，例如第一感光性材料3爲膜狀的情況， -16 - 200930184 可狀本 ;塗 等輥 法' 層法料 積塗材 空噴性 真用光 、 採 法可 層， 積況 用情 採的 第 之 明 發 感 3 膜 成 之 等 性法在 光π ， 塗享 感轉膜 旋的 第、lr £ 後 在法 料 材 液於 爲適 2 m ， 的範圍’最小加工尺寸爲l/zm左右。在此使用的感 光性材料3 ’宜爲以環氧樹脂、環氧丙烯酸酯樹脂等爲主 成分之感光性材料。按照被曝光物的構造和用途，當然也 能使用在此例示以外的感光性材料的組成。 Ο 在步驟P2’爲了形成第二感光性材料6，是將高感度 感光層1成膜於透明膜2a上，其成膜方法沒有特別的限定 ，例如高感度感光層1爲膜狀的情況，可採用積層法、真 空積層法等；在高感度感光層1爲液狀的情況，可採用噴 塗法、輥塗法、旋轉塗布法等。作爲透明膜2a，可使用聚 ' 對苯二甲酸乙二酯、聚丙烯等的聚合體膜。作爲高感度感 光層1，在曝光步驟P4，例如用無光罩曝光裝置（以藍色 半導體雷射作爲第1曝光光源）直接繪製圖案時，在成膜後 © 對於h線（波長405nm)的照射必須具有高感度，且在曝光 顯影後，必須以能遮蔽全光線的方式產生光穿透率變化而 定影成光罩圖案丨’。又第一感光性材料3爲負型的情況’ 不拘其種類，高感度感光層1可使用負型及正型之任一個 反應型。負型感光性材料，受光照射的部分會硬化’未照 射部分則可經由顯影而溶解；相對於此’正型感光性材料 ，受光照射的部分經由顯影會被溶解，而未照射部分則會 硬化。不管是任一個反應型的高感度感光層1，在曝光步 驟P4都能用無光罩曝光裝置繪製出反轉的光罩圖案（對 -17- 200930184 於應形成於第一感光性材料3之期望圖案3’呈反轉）。 此外，也能在第一感光性材料3形成透明膜2a，進一 • 步在其上方形成高感度感光層1。然而’若另外製作出第 • 二感光性材料6，再將其成膜於第一感光性材料3的方法， 由於能減少第一感光性材料3的受傷較佳。按照第一感光 性材料3的物性，並不限定於上述的手法。 在步驟P 3，作爲在第一感光性材料3上形成積層膜6 © 的方法，並沒有特別的限定，例如可採用積層法、真空積 層法等。爲了防止第一感光性材料3發生熱硬化’成膜時 的溫度宜爲70 °C以下，但按照第一感光性材料3的物性， 並不限定於此條件。 在曝光步驟P4，是用無光罩曝光裝置來在高感度感 ' 光層1直接繪製圖案。然後，在步驟P5，使用對應於高感 度感光層1的顯影液來讓高感度感光層1之未曝光部溶解， 藉此獲得繪製圖案1’。這時，爲了避免顯影液接觸第一感 © 光性材料3，必須使透明膜2a和第一感光性材料3形成密 合。關於顯影液的種類，只要按照高感度感光層1所使用 的感光性材料的種類來適當的選擇即可。 曝光步驟P6所使用的第2照射光源，是能照射能量射 束8(在全射出能量中，以1%〜100%的強度來含有 3 50〜450nm的紫外光或近紫外光）的光源，具體而言，例 如爲金屬鹵素燈、低〜超高壓水銀燈、氙氣燈、鹵素燈等 的放電燈，或半導體雷射光源等。較佳爲容易控制照射能 量的半導體雷射、便宜且容易保養的金屬鹵素燈，只要是 -18- 200930184 可對大面積進行均一照射的光源即可。再者，可按照使用 目的'感光性材料，基於消耗電力、照射量的控制性等來 作選擇，當然也能將前述光源組合複數個來使用。 - 此外，在曝光步驟P6進行第2光照射時，由於不須實 施對準’故能在被曝光物未固定的狀態或移動中實施。具 體而言，可在被曝光物的搬運過程進行照射，因此第2照 射所花費的曝光時間完全不會影響產能。 © 在曝光步驟P6，以繪製圖案1’作爲光罩而將第一感 光性材料3實施全面批式照射而使其硬化後，在剝離步驟 P7將脫模處理面2b、透明膜2a以及繪製圖案1’予以剝離 。剝離的方法沒有特別的限定。接著，在步驟P8，使用 對應於第一感光性材料3的顯影液，藉由讓第一感光性材 料3的未曝光部溶解，而在基板5上獲得反轉圖案3’。按照 需要來進行熱硬化及後加熱等的處理，以促進期望圖案3 ’ 的硬化。 ® 在上述說明中，作爲第二感光性材料6，雖是採用包 含高感度感光層1、透明膜2a及脫模處理面2b合計3層的 構造，當然，第二感光性材料也能僅將高感度感光層1直 接形成於第一感光性材料上，接著實施繪製、除去。 〔實施例〕 接著說明本發明的實施例。將第一感光性材料3之鹼 溶解型的負型液狀感光性阻焊劑（曰立化成工業株式會社 製，SR7200G)，以膜厚25//m左右的方式塗布在厚〇.5mm -19- 200930184 的兩面銅面積層板5上，藉此製作成被曝光物。此外’將 含有相對於明膠溶液的體積比爲〇 6的碘溴化銀粒子（平均 ' 粒子尺寸爲球相當徑lym以下，且含有5莫耳％的碘化銀） • 之高感度感光層1，以銀附著量成爲〇.3mol/m2的方式塗布 在厚度100μ m的聚對苯二甲酸乙二酯（PET)膜2a而構成第 二感光性材料6。於50 °C下，將該第二感光性材料6積層在 上述阻焊層上。 〇 在曝光步驟P4，使用以主波長爲h線（波長4〇5nm)的 藍色半導體雷射7作爲第1光源之無光罩曝光裝置，以曝光 量10、20、30mJ/cm2對高感度感光層1進行圖案繪製。在 本實施例，是採用ORC製作所製的紫外線光量計UV-M03 A所測定出的曝光量値。在步驟P5，用鹼溶液進行顯 影，用酸溶液使圖案定影後，在曝光步驟P6，將上述阻 焊層和上述高感度感光層1的圖案形成部以面內均一的方 式同時進行光照射。在本實施例，爲了使該阻焊層硬化’ ® 是使用半導體雷射光源（照射含有3 50~45〇nm的紫外光或 近紫外光的能量射束8)並以曝光量800nU/cm2進行全面批 式照射。接著，在剝離步驟P7，從阻焊層將高感度感光 層1的圖案部和PET膜剝離。在步驟P8，用1重量％、30 °C的碳酸鈉水溶液實施顯影，而獲得與用無光罩曝光裝置 繪製的圖案呈正負反轉之圖案3’。 對於形成於該阻焊層的通孔開口圖案進行外觀觀察， 結果顯示於表1。在此，實施例1〜3是僅改變無光罩曝光裝 置的主波長的h線的曝光量，比較例1〜3則未設置高感度 -20- 200930184 感光層1，而是改變無光罩曝光裝置的主波長h線的曝光 量而將通孔圖案直接繪製於阻焊層的情況。繪製圖案的資 料尺寸是指，收納於無光罩曝光裝置的測試圖案的通孔開 口的資料尺寸。在本實施例1 ~3及比較例1〜3，是針對將 Φ 70//m的圖案資料實施曝光的情況，調查實際在阻焊層 開口的通孔開口徑。 無光罩直接繪製曝光 阻焊層的通孔徑70μιη曝 光部位的實際開口徑 高感度感光層 曝光量 繪製圖案的 資料尺寸 實施例1 有 10mJ/cm2 70μτη 42.6μηι 實施例2 有 20mJ/cm2 70μιη 56·8μπι 實施例3 有 30mJ/cm2 70μηι 51.7μπι 比較例1 Μ y\\\ 30mJ/cm2 70μπι 完全溶解，未留下圖案 比較例2 Μ /»、、 500mJ/cm2 70μηι 未開口 比較例3 te /tw 800mJ/cm2 70μιη 53.1μιη ❹ 〔表1〕 Ο 如實施例1所示，在曝光量10mj/cm2下，因曝光不足 而造成實際開口徑稍小。此顯示出，在這種程度的曝光量 下，即使是對高感度感光層1進行圖案繪製，在阻焊層形 成圖案時仍會發生銀析出量不足的情形。然而，在實施例 2之曝光量20mJ/cm2下’可獲得充分的實際開口徑且無缺 陷的形狀（通孔形狀的情況是接近真圓）。在曝光量 30mJ/cm2下也顯示良好的圖案形狀（實施例3)，但曝光量 爲40mJ/cm2以上時，由於過度曝光而造成高感度感光層1 -21 - 200930184 本身無法進行圖案繪製。因此，僅從實際開口徑來看’以 20mJ/cm2的曝光量爲最佳，但考慮到曝光量越多會對鹵化 • 銀材的硬化程度（耐顯影液性、殘膜厚等）更有利’因此曝 . 光量以20~30mJ/cm2的範圍爲佳。亦即，宜將無光罩曝光 裝置的曝光量例如控制在20~30mJ/cm2的範圍。 另一方面，如比較例所示，在未使用鹵化銀層而僅用 無光罩曝光裝置（照射主波長爲h線）將該阻焊層實施曝光 〇 的情況，由於該阻焊層對主波長h線的感度低，在比較例 1之曝光量30rnJ/cm2下，阻焊層根本無法硬化，在顯影步 驟會完全溶解。又如比較例2所示在將曝光量增加至 500mJ/cm2時，阻焊層可硬化，在圖案資料尺寸爲500μιη之 大通孔形狀的情況雖會開口，但在資料尺寸爲70μπι之小通 ' 孔形狀的情況，由於曝光量不足，實施顯影會造成其形狀 變形，並無法維持期望的圖案形狀。再者，若要以無缺陷 的方式獲得與具有高感度感光層1的情況同等級的實際開 ❹ 口徑，由於上述阻焊層對主波長h線的感度低，如比較例 3所示必須使用高達8 00 mJ/cm2的曝光量。 如以上所說明，依據本發明的實施形態，可將無光罩 曝光裝置進行圖案繪製時所使用的主波長爲h線之藍色半 導體雷射的曝光量減少至20~30mJ/cm2，又藉由將無光罩 曝光裝置的繪製圖案進行正負反轉，而能獲得期望的圖案 。此外’依據本發明的實施形態，用無光罩曝光裝置對高 感度感光層1進行圖案繪製所花費的時間，比起直接繪製 於阻焊層的情況可縮短成1/15〜1/10。 -22- 200930184 接著說明其他形態的實施例。將第一感光性材料3之 鹼溶解型的負型液狀感光性阻焊劑（太陽墨水製造株式會 • 社製，PSR-4000 AUS300)，以膜厚25μιη左右的方式塗布 - 在厚〇.8mm的兩面銅面積層板5(日立化成工業株式會社製 MCL-E-67)上，藉此製作成被曝光物。此外，在厚度ΙΟΟμιη 的聚對苯二甲酸乙二酯（PET)膜2a上，塗布含有鹵化銀的 明膠溶液（作爲高感度感光層1)而構成第二感光性材料6( 〇 柯尼卡美能達醫療印刷器材株式會社製CUHE-100E)。於 5 下，將該第二感光性材料6積層在上述阻焊層上。 在曝光步驟P4，使用以主波長爲h線（波長405nm)的 藍色半導體雷射7作爲第1光源之無光罩曝光裝置，以曝光 量20、30、40mJ/cm2對高感度感光層1進行圖案繪製。在 ’ 本實施例，是採用 ORC製作所製的紫外線光量計UV- M03A所測定出的曝光量値。在步驟P5，用鹼溶液（柯尼 卡美能達醫療印刷器材株式會社製CDM-681)進行顯影， © 用酸溶液（柯尼卡美能達醫療印刷器材株式會社製CFL-881)使圖案定影後，在曝光步驟P6，將上述阻焊層和上 述高感度感光層1的圖案形成部以面內均一的方式同時進 行光照射。在本實施例，爲了使該阻焊層硬化，是使用超 高壓UV(紫外線）燈（USHIO電機株式會社製USH-5 00D， 照射含有3 5 0〜45 0nm的紫外光或近紫外光的能量射束8)並 以曝光量500mJ/cm2進行全面批式照射。接著，在剝離步 驟P7，從阻焊層將高感度感光層1的圖案部和PET膜剝離 。在步驟P8，用1重量％、3(TC的碳酸鈉水溶液實施顯影 -23- 200930184 ，而獲得與用無光罩曝光裝置繪製的圖案呈正負反轉之圖 案3,。 • 對於形成於該阻焊層的通孔開口圖案進行外觀觀察， 結果顯示於表2。在此，實施例4〜6是僅改變無光罩曝光裝 置的主波長的h線的曝光量，比較例4〜7則未設置高感度 感光層1，而是改變無光罩曝光裝置的主波長h線的曝光 量而將通孔圖案直接繪製於阻焊層的情況。繪製圖案的資 〇 料尺寸是指，收納於無光罩曝光裝置的測試圖案的通孔開 口的資料尺寸。在本實施例4〜6及比較例4〜7，是針對將 φ 1 5 0 // m的圖案資料實施曝光的情況，調查實際在阻焊層 開口的通孔開口徑。 〔表2〕 無光罩直接繪製曝光 阻焊層的通孔徑150μιη曝 光部位的實際開口徑 高感度感光層 h線曝光量 繪製圖案的 資料尺寸 實施例4 有 20mJ/cm2 150μιη 128.2μπι 實施例5 有 30mJ/cm2 150μιη 143.0μιη 實施例6 有 40mJ/cm2 150μιη 145.7μπι 比較例4 30mJ/cm2 150μηι 完全溶解，未留下圖案 比較例5 Μ 1000mJ/cm2 150μηι 未開口 比較例6 Μ j \ \\ 1500mJ/cm2 150μιη 127.8μηι 比較例7 M j\\\ 2000mJ/cm2 150μηι 120.5μηιG [Disclosure] It is not mentioned in any of the prior art (Patent Documents 1 to 5) how the solder resist film of the photosensitive material having low sensitivity to the visible light source of the reticle exposure apparatus has high productivity. A technique of performing exposure to form a pattern. Accordingly, an object of the present invention is to provide a pattern forming method which can meet the required level of cost reduction and short lead time and has high precision and high exposure efficiency when performing maskless exposure. In order to achieve the above object, the pattern forming method of the present invention, characterized by -9-200930184, comprises: a first sensitivity having a low sensitivity to visible light and a high sensitivity to an energy beam (containing ultraviolet light or 'near ultraviolet light) Forming a film on the substrate, forming a film, forming a second photosensitive material (higher sensitivity to visible light than the first photosensitive material) on the first photosensitive material, and forming the second The photosensitive material is directly drawn by an exposure device (exposure light composed of the visible light) to draw a second pattern, and a first exposure step is performed by using the developing solution after the drawing of the second photosensitive material. a first developing step of forming a second pattern, and performing the batch irradiation on the second photosensitive material formed on the first photosensitive material by using the energy beam (including ultraviolet light or near-ultraviolet light) to apply the second a second exposure step of patterning the first photosensitive material to perform exposure of the first pattern, and exposing from the second exposure step A first photosensitive material after the step of removing the second release of the photosensitive material, a developing step of forming a second pattern using the first developer ❹ processed in the first step of peeling the photosensitive material remaining. Further, in the pattern forming method, the first photosensitive material is formed of a photosensitive solder resist film, and the second photosensitive material is a photosensitive material layer composed of a silver halide layer. That is, the pattern forming method of forming the first pattern by using the first photosensitive material (having low sensitivity to the visible light exposure light used for directly drawing the exposure device without the mask) is divided into the following two stages: in formation a pattern drawing stage on the second photosensitive material having high sensitivity to visible light exposure light on the first photosensitive material, and a batch exposure using the energy beam for the first photosensitive source 01 200930184 material The stage of photohardening 'the time taken to draw the pattern sharply. • In this way, in order to improve the first photosensitive material for the solder resist film, the low sensitivity of the visible light exposure light used in the exposure device can be directly formed on the first photosensitive material. The light has a high sensitivity second photosensitive material (for example, a silver halide material). As described above, the second photosensitive material having high sensitivity to light for visible light exposure must utilize a dark room or a red light chamber because of the inability to use the yellow light chamber, and the manufacturing conditions of the substrate must be changed at the mass production site. This technique is completely unexpected to those skilled in the art. Further, as the second photosensitive material of the present invention, for example, in the case of a material which is not photosensitive to light having a wavelength of 4 50 nm ' disclosed in Patent Document 6 (JP-A-2003-77350), a yellow light chamber can be used. . The first photosensitive material and the second photosensitive material are sequentially formed on the substrate, and the first photosensitive material is a photosensitive material having a low sensitivity to a light source directly drawing the exposure device to the mask. The second photosensitive material is selected from a photosensitive material having high sensitivity. The second photosensitive material preferably has a non-photosensitive transparent film as a support, and the transparent film has a release-treated surface after the release treatment. The transparent film is used to support the photosensitive material layer (hereinafter referred to as a high-sensitivity photosensitive layer) having high sensitivity to visible light of the second photosensitive material, and the developer for the high-sensitivity photosensitive layer is prevented from contacting the first photosensitive material. Further, mutual diffusion of the high-sensitivity photosensitive layer and the first photosensitive material can be prevented, thereby preventing contamination and avoiding sensitivity variation of the photosensitive material. Further, the effect of the release-treated surface is to: -11 - 200930184 to facilitate the peeling of the second photosensitive material in the next step' and to reduce the contamination of the first photosensitive material which occurs when peeling off. According to the nature of the first * photosensitive material, the release treatment surface is not necessary. Preferably, the second photosensitive material which is formed in the order of the release-treated surface, the transparent film, and the high-sensitivity photosensitive layer is formed into a film at 7 (TC or less) so that the release-treated surface contacts the first photosensitive material. On the substrate having the first photosensitive material. This is to prevent the first photosensitive material from being thermally hardened. Further, the release treatment surface and the transparent film are preferably transparent (total light (visible to ultraviolet light) The transmittance of 90% or more. For the light source of the maskless exposure device, the pattern of the desired exposure pattern after positive and negative inversion is directly drawn by the maskless exposure device. Since the second photosensitive material has high sensitivity Compared with the case where the low-sensitivity first photosensitive material is directly patterned, the exposure efficiency can be greatly improved. Especially for the exposure of the solder resist film, the effect of the present invention is highly expected. Except that in the soldering part for loading electronic parts, the pattern of coating or stacking on the printed wiring board is comprehensive. Therefore, the exposure of the negative type solder resist film by the method of the present invention is carried out. Since only the pattern after the pattern inversion of the entire substrate is drawn is drawn, the drawing area can be reduced, and the time taken for the patterning by the direct drawing exposure device without the photomask can be further shortened. The first photosensitive material is preferably used. Therefore, the visible light exposure light for the light source of the reticle exposure apparatus is less than twice as sensitive as the second photosensitive material. The sensitivity at this time refers to the degree of hardening of the photosensitive material. Preferably, by The reticle exposure device hardens the second photosensitive material to perform the light irradiation amount above the optimum exposure amount of the pattern -12-200930184, and the light hardening of the first photosensitive material starts. When the mask exposure apparatus performs patterning, it is possible to prevent the first photosensitive material from being hardened, in other words, a photosensitive material having a very low sensitivity for visible light exposure light for a light source of the non-lighting cover exposure apparatus, and is particularly suitable for use in the present invention. The necessary feature of the two photosensitive materials is that the transmittance change occurs by pattern exposure and development processing, that is, after film formation to exposure. At the time before the light, the transmittance of the light source of the maskless exposure device is 30% to 70%, and the total light transmittance after exposure and development becomes 10% or less. The sensitivity of the second photosensitive material is The amount of change in the transmittance _ before and after the drawing is performed by the reticle exposure device is determined. The pattern defined by the development of the second photosensitive material has a feature that can shield the illumination light, and if the second sensitization is applied The pattern of the material and the first photosensitive material are simultaneously irradiated comprehensively, and the second photosensitive material becomes a mask, and the pattern directly drawn by the maskless exposure device is drawn in the first photosensitive property by the pattern of positive and negative inversion. In the material, the first photosensitive material which is in contact with the low-sensitivity of the second photosensitive material can be prevented from being exposed by optical deviation such as diffraction, and the influence of the oxygen barrier can be eliminated ( The main reason for the decrease in sensitivity of photosensitive materials). After the second photosensitive material is peeled off, the low-sensitivity first photosensitive material is developed to form a pattern on the first photosensitive material. Since the pattern is drawn with a maskless exposure device, an increase in resolution can be expected. By carrying out the pattern forming method of the present invention, when the pattern is drawn by the maskless exposure apparatus, it is possible to realize pattern drawing with high precision and high exposure efficiency which can meet the required level of cost reduction and short delivery. -13- 200930184 In addition, in the exposure step of the solder resist film for printed wiring boards, high-precision alignment exposure can be performed while maintaining the electrical characteristics of the solder resist film, and the pattern drawing time can be greatly shortened. [Embodiment] The embodiment of the pattern forming method of the present invention will be described below using the drawings, but the present invention is not limited thereto. φ First, a summary of an embodiment of the present invention will be described using Figs. 1 and 2 . The pattern forming method of the present invention comprises the steps of: forming a film P1 of the first photosensitive material 3 on the substrate 5; and opposite sides of the transparent film 2a having the release-treated surface 2b from the release-treated surface 2b. Forming a high-sensitivity photosensitive layer (silver salt photo-sensitive material containing a silver halide emulsion layer) having a higher sensitivity than the first photosensitive material 3 to form a second photosensitive material 6 Step P2; step P3 of depositing the second photosensitive material 6 on the first photosensitive material 3 to form the high-sensitivity photosensitive layer 1; directly drawing the exposure device with a mask (not shown) (the main wavelength of the irradiation is 405 nm) a blue semiconductor laser of the h-line 7) an exposure step P4 for directly drawing a pattern on the high-sensitivity photosensitive layer; a step P5 of developing the high-sensitivity photosensitive layer 1 to form the drawn pattern 1'; for forming a high-sensitivity photosensitive layer The exposure pattern P6 of the drawing pattern 1 ′ of the first photosensitive material 6 and the first photosensitive material 3 is simultaneously subjected to batch exposure; the drawing pattern 1 ′ of the high-sensitivity photosensitive layer 1 and the second photosensitive material 6 are removed. Stripping step P 7 ; Step 3 embodiment developing a photosensitive material to form on the substrate 5 is drawn '-14-200930184 reverse pattern (solder resist pattern after hardening purposes) 3 by inverting' 1 pattern P8. Further, in Fig. 2, 4 represents a conductor portion on the substrate 5; 7 represents a maskless step used in the exposure step P4, and directly draws a blue semiconductor laser of the first exposure light source of the exposure device to emit a dominant wavelength. It is visible light of h line (wavelength 405 nm). 8 represents an energy beam emitted from the second irradiation light source used in the exposure step S6 (in the total emission energy, ultraviolet light or near-ultraviolet light of 3 50 to 45 Onm is contained at an intensity of 1% to 100%) .直接 Directly drawing an exposure device (not shown) as a mask without, for example, including: a blue semiconductor laser that emits visible light as a first exposure light source, and high-power laser light and a polygon mirror for scanning laser light on a substrate A device for directly drawing a pattern; a device that uses a two-dimensional spatial light modulation element such as a liquid crystal or a DMD (Digital Micromirror Device) to generate a two-dimensional pattern, and directly draws the image on the substrate by using a projection lens. Next, each step will be described in detail. The first photosensitive material 3 used in the present invention is a negative-type i-line photosensitive material for wiring substrate manufacturing ©, and the wiring substrate is mainly irradiated with ultraviolet light to near-ultraviolet light of 3 5 0 to 4 5 nm. For photolithography. The photosensitive material 3 has various purposes and uses, but a solder resist film which is covered with a permanent protective film on a printed wiring board other than the soldering region is used as a blue semiconductor. When the laser is drawn as a maskless exposure apparatus of the first exposure light source, the exposure efficiency thereof is particularly inferior, so that a good effect can be obtained in the present invention. In addition, FIG. 3 shows that the high-sensitivity photosensitive layer 1 and the first photosensitive material 3 used in the pattern forming method of the present invention are irradiated with a blue semiconductor ray having a dominant wavelength of h line -15-200930184 (wavelength 40 5 nm). An example of the hardening behavior at the time of light emission (the relationship between the amount of exposure and the film thickness of the photosensitive material after development). The photosensitive material which can be used as the 'photosensitive material of the first photosensitive material 3' is a material which is hardened by the amount of light irradiation of the high-sensitivity photosensitive layer 1 which is completely cured. When the high-sensitivity photosensitive layer 1 is drawn in the exposure step P4, when the illumination light passes through the intermediate layer (the transparent film 2a and the release-treated surface 2b) and reaches the first photosensitive material film 3, the sensitivity of the first photosensitive material 3 is obtained. Near the sensitivity of the high-sensitivity photosensitive layer © 1, the first photosensitive material 3 is also subjected to exposure hardening. In the present invention, in order to draw a reverse pattern on the high-sensitivity photosensitive layer 1 using the maskless exposure device at the exposure step P4 (for a pattern in which the desired pattern finally formed in the first photosensitive material 3 is positively and negatively inverted), When the high-sensitivity photosensitive layer 1 is exposed, if the first photosensitive material 3 is similarly cured, a desired pattern may not be obtained. Therefore, in the exposure step P4, the exposure amount at the start of the hardening of the first photosensitive material 3 must be larger than the exposure amount at the end of the hardening of the high-sensitivity photosensitive layer 1, and thus the high-sensitivity® light layer 1 and the first photosensitive light Preferably, the material 3 has a difference in sensitivity between the exposure wavelength (the main wavelength is h line) emitted from the first exposure light source of the maskless exposure device before the pattern is drawn by the maskless exposure device. The larger the difference, the more suitable for the present invention. The form of the first photosensitive material 3 to be used in the present invention can be appropriately formed by a predetermined method on the surface of the exposed object such as a wiring board, in the case of either a dry film or a liquid. It can be formed into a film. The method of forming the film of the first photosensitive material 3 on the substrate in the step P1 is not particularly limited. For example, the first photosensitive material 3 is in the form of a film, and -16 - 200930184 can be used; 'Layer method, the material is coated with air, and the light is sprayed, and the method can be layered. The first condition is the same as the feeling of the film. 3 The method of forming the film is in the light π, and the coating is used to change the film. After the lr £ is in the range of 2 m, the minimum processing size is about l/zm. The photosensitive material 3' used herein is preferably a photosensitive material mainly composed of an epoxy resin, an epoxy acrylate resin or the like. The composition of the photosensitive material other than the above-described examples can of course be used depending on the structure and use of the object to be exposed. Ο In the step P2', in order to form the second photosensitive material 6, the high-sensitivity photosensitive layer 1 is formed on the transparent film 2a, and the film forming method is not particularly limited. For example, the high-sensitivity photosensitive layer 1 is in the form of a film. A layering method, a vacuum lamination method, or the like may be employed. When the high-sensitivity photosensitive layer 1 is in a liquid state, a spray coating method, a roll coating method, a spin coating method, or the like may be employed. As the transparent film 2a, a polymer film of polyethylene terephthalate or polypropylene can be used. As the high-sensitivity photosensitive layer 1, in the exposure step P4, for example, when the pattern is directly drawn by the maskless exposure apparatus (the blue semiconductor laser is used as the first exposure light source), after the film formation © for the h line (wavelength 405 nm) The irradiation must have a high sensitivity, and after exposure and development, it is necessary to produce a reticle pattern 丨' by changing the light transmittance in such a manner as to shield the entire light. In the case where the first photosensitive material 3 is of a negative type, the high-sensitivity photosensitive layer 1 may be of either a negative type or a positive type. In the negative photosensitive material, the portion irradiated with light is hardened. The unirradiated portion can be dissolved by development. In contrast to the 'positive photosensitive material, the portion irradiated with light is dissolved by development, and the portion not irradiated is hardened. . Regardless of any of the reaction type high-sensitivity photosensitive layers 1, an inverted mask pattern can be drawn by the maskless exposure device in the exposure step P4 (for -17-200930184, it should be formed on the first photosensitive material 3). The pattern 3' is expected to be inverted). Further, it is also possible to form the transparent film 2a on the first photosensitive material 3, and further form the high-sensitivity photosensitive layer 1 thereon. However, if the second photosensitive material 6 is separately produced and then formed into the first photosensitive material 3, it is preferable to reduce the damage of the first photosensitive material 3. The physical properties of the first photosensitive material 3 are not limited to the above-described methods. In the step P3, the method of forming the laminated film 6 © on the first photosensitive material 3 is not particularly limited, and for example, a laminate method, a vacuum lamination method, or the like can be employed. In order to prevent the first photosensitive material 3 from being thermally cured, the temperature at the time of film formation is preferably 70 ° C or lower, but the physical properties of the first photosensitive material 3 are not limited to these conditions. In the exposure step P4, the mask is directly drawn by the maskless exposure device in the high-sensitivity 'light layer 1'. Then, in step P5, the developer corresponding to the high-sensitivity photosensitive layer 1 is used to dissolve the unexposed portion of the high-sensitivity photosensitive layer 1, whereby the drawing pattern 1' is obtained. At this time, in order to prevent the developer from coming into contact with the first photosensitive material 3, it is necessary to form the transparent film 2a and the first photosensitive material 3 to be in close contact with each other. The type of the developer may be appropriately selected in accordance with the type of the photosensitive material used for the high-sensitivity photosensitive layer 1. The second irradiation light source used in the exposure step P6 is a light source capable of irradiating the energy beam 8 (containing ultraviolet light of 30 to 450 nm or near-ultraviolet light with an intensity of 1% to 100% in total emission energy). Specifically, it is, for example, a metal halide lamp, a low-to-high pressure mercury lamp, a xenon lamp, a halogen lamp, or the like, or a semiconductor laser light source. It is preferably a semiconductor laser which is easy to control the irradiation energy, and a metal halide lamp which is inexpensive and easy to maintain, as long as it is a light source which can uniformly irradiate a large area in -18-200930184. Further, it is possible to select the photosensitive material according to the purpose of use, based on the power consumption, the controllability of the irradiation amount, and the like, and it is of course possible to use the above-mentioned light source in combination. Further, when the second light irradiation is performed in the exposure step P6, since the alignment is not required, it can be carried out in a state where the object to be exposed is not fixed or moved. Specifically, the exposure can be performed during the conveyance of the object to be exposed, so that the exposure time required for the second irradiation does not affect the productivity at all. © In the exposure step P6, after the first photosensitive material 3 is subjected to full batch irradiation and hardening by drawing the pattern 1' as a mask, the release-treated surface 2b, the transparent film 2a, and the drawing pattern are removed in the peeling step P7. 1' is stripped. The method of peeling is not particularly limited. Next, in step P8, the reversal pattern 3' is obtained on the substrate 5 by dissolving the unexposed portion of the first photosensitive material 3 using the developer corresponding to the first photosensitive material 3. The treatment such as thermal hardening and post-heating is performed as needed to promote the hardening of the desired pattern 3'. In the above description, the second photosensitive material 6 has a structure including three layers of the high-sensitivity photosensitive layer 1, the transparent film 2a, and the release-treated surface 2b. Of course, the second photosensitive material can also be used only. The high-sensitivity photosensitive layer 1 is directly formed on the first photosensitive material, and then drawn and removed. [Examples] Next, examples of the invention will be described. The negative-type liquid photosensitive solder resist of the first photosensitive material 3 (SR7200G, manufactured by Keli Chemical Industry Co., Ltd.) was applied to a thickness of about 25/m to a thickness of about 5 mm -19. - On the double-sided copper area laminate 5 of 200930184, the exposed object is produced. Further, 'the high-sensitivity photosensitive layer 1 containing silver iodobromide particles having a volume ratio of 〇6 to the gelatin solution (average 'particle size is equal to or less than the ball diameter lym and containing 5 mol% of silver iodide) The amount of silver adhered was applied to a polyethylene terephthalate (PET) film 2a having a thickness of 100 μm to form a second photosensitive material 6 in a manner of 3 mol/m 2 . The second photosensitive material 6 was laminated on the above solder resist layer at 50 °C.曝光In the exposure step P4, a maskless exposure apparatus using a blue semiconductor laser 7 having a main wavelength of h line (wavelength 4 〇 5 nm) as the first light source is used, and the exposure amount is 10, 20, 30 mJ/cm 2 for high sensitivity. The photosensitive layer 1 is patterned. In the present embodiment, the exposure amount 値 measured by the ultraviolet light meter UV-M03 A manufactured by ORC was used. In the step P5, development is carried out with an alkali solution, and the pattern is fixed with an acid solution. Then, in the exposure step P6, the solder resist layer and the pattern forming portion of the high-sensitivity photosensitive layer 1 are simultaneously irradiated with light in a uniform manner in the plane. In this embodiment, in order to harden the solder resist layer, a semiconductor laser light source (irradiating an energy beam 8 containing ultraviolet light of about 50 to 45 nm or near ultraviolet light) is used and the exposure amount is 800 nU/cm 2 . Full batch irradiation. Next, in the peeling step P7, the pattern portion of the high-sensitivity photosensitive layer 1 and the PET film are peeled off from the solder resist layer. At the step P8, development was carried out with a 1% by weight aqueous solution of sodium carbonate at 30 °C to obtain a pattern 3' which was positively and negatively reversed with the pattern drawn by the maskless exposure apparatus. The appearance of the via opening pattern formed in the solder resist layer was observed, and the results are shown in Table 1. Here, Examples 1 to 3 are exposure amounts of the h line which only change the main wavelength of the maskless exposure apparatus, and Comparative Examples 1 to 3 are not provided with the high sensitivity -20-200930184 photosensitive layer 1, but the mask is changed. The exposure amount of the main wavelength h line of the exposure apparatus is used to directly draw the via pattern on the solder resist layer. The material size of the drawing pattern refers to the data size of the through-hole opening of the test pattern accommodated in the maskless exposure apparatus. In the first to third embodiments and the comparative examples 1 to 3, the pattern data of Φ 70//m was exposed, and the opening diameter of the through hole which is actually opened in the solder resist layer was examined. No mask directly draws the through hole of the exposure solder resist layer. 70 μm. Actual opening diameter of the exposed portion. High sensitivity. Photosensitive layer exposure amount. Data size of the pattern. Example 1 There are 10 mJ/cm 2 70 μτη 42.6 μηι Example 2 There are 20 mJ/cm 2 70 μιη 56· 8μπι Example 3 There is 30mJ/cm2 70μηι 51.7μπι Comparative Example 1 Μ y\\\ 30mJ/cm2 70μπι Completely dissolved, no pattern is left. Comparative Example 2 Μ /»,, 500mJ/cm2 70μηι Unopened Comparative Example 3 te /tw 800 mJ/cm 2 70 μm n 53.1 μηη 〔 [Table 1] Ο As shown in Example 1, the actual opening diameter was slightly small due to insufficient exposure at an exposure amount of 10 mj/cm 2 . This shows that even at the exposure amount of this level, even if the high-sensitivity photosensitive layer 1 is patterned, the amount of silver deposition may be insufficient when the solder resist layer is patterned. However, a sufficient actual opening diameter and no defect shape can be obtained at the exposure amount of 20 mJ/cm 2 of Example 2 (the case of the shape of the through hole is close to a true circle). A good pattern shape (Example 3) was also exhibited at an exposure amount of 30 mJ/cm2, but when the exposure amount was 40 mJ/cm2 or more, the high-sensitivity photosensitive layer 1-21-200930184 itself could not be patterned due to overexposure. Therefore, it is best to use the exposure amount of 20 mJ/cm2 from the actual opening diameter. However, it is more advantageous to reduce the degree of hardening of the silver material and the silver material (developing liquid resistance, residual film thickness, etc.) in consideration of the exposure amount. Therefore, the amount of light is preferably in the range of 20 to 30 mJ/cm2. That is, the exposure amount of the maskless exposure apparatus should be controlled, for example, in the range of 20 to 30 mJ/cm2. On the other hand, as shown in the comparative example, the solder resist layer is exposed to light without using a silver halide layer and only the maskless exposure apparatus (the main wavelength of the irradiation is h line), since the solder resist layer is mainly The sensitivity of the wavelength h line was low, and under the exposure amount of 30 rnJ/cm 2 of Comparative Example 1, the solder resist layer could not be hardened at all, and was completely dissolved in the developing step. Further, as shown in Comparative Example 2, when the exposure amount was increased to 500 mJ/cm 2 , the solder resist layer was hardened, and although the pattern size was 500 μm, the shape of the large via hole was opened, but the data size was 70 μm. In the case of the shape of the hole, since the amount of exposure is insufficient, the development is caused to cause deformation of the shape, and the desired pattern shape cannot be maintained. Further, if the actual opening diameter of the same level as that of the case having the high-sensitivity photosensitive layer 1 is obtained in a non-defective manner, since the solder resist layer has low sensitivity to the main wavelength h line, it must be used as shown in Comparative Example 3. Up to 8 00 mJ/cm2 exposure. As described above, according to the embodiment of the present invention, the exposure amount of the blue semiconductor laser having the main wavelength h line used for pattern drawing of the maskless exposure device can be reduced to 20 to 30 mJ/cm 2 , and The desired pattern can be obtained by positively and negatively inverting the drawing pattern of the maskless exposure apparatus. Further, according to the embodiment of the present invention, the time taken to pattern the high-sensitivity photosensitive layer 1 by the maskless exposure apparatus can be shortened to 1/15 to 1/10 as compared with the case where the solder resist layer is directly drawn. -22- 200930184 Next, an embodiment of another embodiment will be described. A negative-type liquid photosensitive solder resist (PSR-4000 AUS300, manufactured by Sun Ink Co., Ltd., manufactured by Sun Ink Co., Ltd.) of the first photosensitive material 3 is applied at a film thickness of about 25 μm - at a thickness of 8 mm. The double-sided copper area laminate 5 (MCL-E-67, manufactured by Hitachi Chemical Co., Ltd.) was used to prepare an object to be exposed. Further, on a polyethylene terephthalate (PET) film 2a having a thickness of ΙΟΟμηη, a gelatin solution containing silver halide (as the high-sensitivity photosensitive layer 1) is applied to constitute a second photosensitive material 6 (〇Konica Minolta) CUHE-100E, manufactured by Tatsuma Medical Printing Equipment Co., Ltd.). At 5, the second photosensitive material 6 is laminated on the solder resist layer. In the exposure step P4, a maskless exposure apparatus using a blue semiconductor laser 7 having a main wavelength of h line (wavelength 405 nm) as a first light source is used, and a high-sensitivity photosensitive layer 1 is applied at an exposure amount of 20, 30, 40 mJ/cm 2 . Perform pattern drawing. In the present embodiment, the exposure amount 値 measured by the ultraviolet light meter UV-M03A manufactured by ORC was used. In step P5, development was carried out using an alkali solution (CDM-681, manufactured by Konica Minolta Medical Printing Co., Ltd.), and the pattern was fixed by an acid solution (CFL-881 manufactured by Konica Minolta Medical Printing Co., Ltd.). In the exposure step P6, the solder resist layer and the pattern forming portion of the high-sensitivity photosensitive layer 1 are simultaneously irradiated with light in a uniform manner in-plane. In the present embodiment, in order to harden the solder resist layer, an ultrahigh-pressure UV (ultraviolet) lamp (USH-5 00D manufactured by USHIO Electric Co., Ltd.) is used to irradiate energy containing ultraviolet light of 350 to 450 nm or near-ultraviolet light. The beam 8) was subjected to full batch irradiation at an exposure amount of 500 mJ/cm2. Next, in the peeling step P7, the pattern portion of the high-sensitivity photosensitive layer 1 and the PET film are peeled off from the solder resist layer. In step P8, development -23-200930184 is carried out with 1% by weight of 3% aqueous solution of sodium carbonate, and a pattern 3 which is positively and negatively reversed with the pattern drawn by the maskless exposure apparatus is obtained, and is formed in the resistance. The through hole opening pattern of the solder layer was observed in appearance, and the results are shown in Table 2. Here, Examples 4 to 6 are exposure amounts of the h line which only changed the dominant wavelength of the maskless exposure apparatus, and Comparative Examples 4 to 7 were not. The high-sensitivity photosensitive layer 1 is provided, and the exposure amount of the main wavelength h-line of the maskless exposure device is changed to directly draw the via pattern on the solder resist layer. The size of the pattern of the pattern is referred to as The data size of the through-hole opening of the test pattern of the mask exposure apparatus. In the fourth to sixth embodiments and the comparative examples 4 to 7, the pattern data of φ 1 5 0 // m was exposed, and the investigation was actually carried out. The opening diameter of the through hole of the solder resist layer is opened. [Table 2] The through hole of the exposure solder resist layer is directly drawn without a mask. 150 μm The actual opening diameter of the exposed portion is high. The photosensitive layer h line exposure amount is drawn. The data size of the pattern is as follows. 20mJ/cm2 150μιη 128 .2μπι Example 5 There are 30mJ/cm2 150μηη 143.0μιη Example 6 40mJ/cm2 150μηη 145.7μπι Comparative Example 4 30mJ/cm2 150μηι Completely dissolved, leaving no pattern Comparative Example 5 Μ 1000mJ/cm2 150μηι Unopened Comparative Example 6 Μ j \ \\ 1500mJ/cm2 150μιη 127.8μηι Comparative Example 7 M j\\\ 2000mJ/cm2 150μηι 120.5μηι
如實施例4所示，在曝光量20mJ/cm2下，因曝光不足 而造成實際開口徑稍小。此顯示出，在這種程度的曝光量 下，即使是對高感度感光層1進行圖案繪製，在阻焊層形 -24- 200930184 成圖案時仍會發生銀析出量不足的情形。然而，在實施例 5之曝光量3〇111*1/(：1112下’可獲得充分的實際開口徑且無缺 ' 陷的形狀（通孔形狀的情況是接近真圓）。在曝光量 . 40mJ/cm2下也顯示良好的圖案形狀（實施例6)，但曝光量 爲50mJ/cm2以上時，由於過度曝光而造成高感度感光層1 的開口徑變大，如此也會造成阻焊層的開口徑變大。因此 ，僅從實際開口徑來看，以30mJ/Cm2的曝光量爲最佳，但 ❹ 考慮到曝光量越多會對鹵化銀材的硬化程度（耐顯影液性 、殘膜厚等）更有利，因此曝光量以30〜40m〗/cm2的範圍爲 佳。亦即，宜將無光罩曝光裝置的曝光量例如控制在 30~40mJ/cm2的範圍。 另一方面，如比較例4〜7所示，在未使用鹵化銀層而 僅用無光罩曝光裝置（照射主波長爲h線）將該阻焊層實施 曝光的情況，由於該阻焊層對主波長h線的感度低，在比 較例4之曝光量30mJ/Cm2下，阻焊層根本無法硬化，在顯 © 影步驟會完全溶解。又如比較例5所示在將曝光量增加至 1 000mJ/cm2時，阻焊層可硬化，在圖案資料尺寸爲5 00μιη 之大通孔形狀的情況雖會開□，但在資料尺寸爲1 50μιη之 小通孔形狀的情況，由於曝光量不足，實施顯影會造成其 形狀變形，並無法維持期望的圖案形狀。如比較例6所示 ’若照射1 500mJ/cm2的曝光量，雖可形成資料尺寸150μιη 的通孔形狀’但無法以無缺陷的方式獲得與具有高感度感 光層1的情況同等級的實際開口徑。如比較例7所示，若進 一步增大曝光量，由於過度曝光而造成開口徑變小。在未 -25- 200930184 設置高感度感光層1的情況下，在曝光量1 500mJ/cm2時的 開口徑最大，其和實施例4的開口徑爲大致相同的數値。 ' 亦即，藉由使用高感度感光層1來進行曝光，可提昇阻焊 • 層的解析度。 如以上所說明，依據本發明的實施形態，可將無光罩 曝光裝置進行圖案繪製時所使用的主波長爲h線之藍色半 導體雷射的曝光量減少至30〜40mJ/cm2，又藉由將無光罩 〇 曝光裝置的繪製圖案進行正負反轉，而能獲得期望的圖案 。此外，依據本發明的實施形態，用無光罩曝光裝置對高 感度感光層1進行圖案繪製所花費的時間，比起直接繪製 於阻焊層的情況可縮短成1 /20。 【圖式簡單說明】 第1圖係顯示本發明的圖案形成方法的一實施形態之 步驟圖。 © 第2(P1)〜（P8)圖是依序顯示第1圖所示的步驟P1-P8的 槪略截面。 第3圖係係顯示，對本發明的圖案形成方法所使用的 高感度感光層1及第一感光性材料3照射主波長爲h線的藍 色半導體雷射光時的硬化舉動。 【主要元件符號說明】 1 :高感度感光層 2a :透明膜 -26- 200930184 2b :脫模處理面 3 :第一感光性材料 ' 4 :導體部 . 5 :基板 6 :第二感光性材料 7 :藍色半導體雷射 8 :能量射束 © 1’：繪製圖案（光罩圖案） 3 ’ ：期望圖案As shown in Example 4, the actual opening diameter was slightly small due to insufficient exposure at an exposure amount of 20 mJ/cm2. This shows that even at the exposure amount of this level, even if the high-sensitivity photosensitive layer 1 is patterned, the amount of silver deposition may be insufficient when the solder resist layer is formed into a pattern of -24 to 200930184. However, in the exposure amount of Example 5, 3〇111*1/(:1112', a sufficient actual opening diameter can be obtained and there is no shortage of shape (the shape of the through hole is close to a true circle). The exposure amount is 40 mJ. A good pattern shape is also exhibited under /cm2 (Example 6), but when the exposure amount is 50 mJ/cm2 or more, the opening diameter of the high-sensitivity photosensitive layer 1 becomes large due to overexposure, which also causes the solder resist layer to be opened. Therefore, the exposure amount of 30 mJ/cm 2 is the best in terms of the actual opening diameter, but the degree of hardening of the silver halide material is considered in consideration of the exposure amount (developing liquid resistance, residual film thickness) Etc.) is more advantageous, so the exposure amount is preferably in the range of 30 to 40 m / cm 2 , that is, the exposure amount of the maskless exposure device is preferably controlled, for example, in the range of 30 to 40 mJ/cm 2 . In Examples 4 to 7, the solder resist layer was exposed without using a silver halide layer and using only a maskless exposure apparatus (the main wavelength of the irradiation was h line), since the solder resist layer was on the main wavelength h line. The sensitivity is low, and the solder resist layer cannot be hardened at all under the exposure amount of 30 mJ/cm 2 of Comparative Example 4. When the exposure amount is increased to 1 000 mJ/cm 2 as shown in Comparative Example 5, the solder resist layer can be hardened, and the pattern of the large through-hole shape of the pattern data size of 500 μm is opened. However, in the case of a small through-hole shape having a data size of 1 50 μm, since the exposure amount is insufficient, development of the shape causes deformation of the shape thereof, and the desired pattern shape cannot be maintained. As shown in Comparative Example 6, if the irradiation is performed at 500 mJ/cm 2 . The exposure amount can be formed into a through-hole shape of a material size of 150 μm, but the actual opening diameter of the same level as that of the case having the high-sensitivity photosensitive layer 1 cannot be obtained in a defect-free manner. As shown in Comparative Example 7, if it is further increased The exposure amount is small due to overexposure. In the case where the high-sensitivity photosensitive layer 1 is not provided in the range of -25 to 200930184, the opening diameter at the exposure amount of 1 500 mJ/cm 2 is the largest, and the opening diameter of the embodiment 4 is the same. It is approximately the same number. ' That is, by using the high-sensitivity photosensitive layer 1 for exposure, the resolution of the solder resist layer can be improved. As explained above, according to an embodiment of the present invention, The exposure amount of the blue semiconductor laser whose main wavelength is h line used for pattern drawing by the mask exposure device is reduced to 30 to 40 mJ/cm 2 , and the pattern of the maskless exposure device is positively and negatively inverted. Further, according to the embodiment of the present invention, the time taken to pattern the high-sensitivity photosensitive layer 1 by the maskless exposure apparatus can be shortened compared to the case where the solder resist layer is directly drawn. 1 / 20. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a step of an embodiment of a pattern forming method of the present invention. © 2 (P1) to (P8) are sequentially shown in Fig. 1 A schematic cross section of steps P1-P8. Fig. 3 is a view showing the hardening behavior when the high-sensitivity photosensitive layer 1 and the first photosensitive material 3 used in the pattern forming method of the present invention are irradiated with blue semiconductor laser light having a dominant wavelength h-line. [Explanation of main component symbols] 1 : High-sensitivity photosensitive layer 2a : Transparent film -26- 200930184 2b : Release treatment surface 3 : First photosensitive material ' 4 : Conductor portion. 5 : Substrate 6 : Second photosensitive material 7 : Blue Semiconductor Laser 8 : Energy Beam © 1 ': Draw Pattern (Photomask Pattern) 3 ' : Expected Pattern
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