200929348 六、發明說明： 【發明所屬之技術領域】 本發明有關用於原位（jn-Situ)監測化學機械平坦化法的 方法與系統。因此，本發明涉及化學工程、半導體科技以 及材料科學的領域。 【先前技術】 化學機械平坦化或CMP已經成為從工件移除材料而廣 泛應用的技術。特別是電腦製造產業大量依賴cMP製程對 Ο 以各種材料所製成的晶圓進行拋光，包括陶瓷、矽、玻璃、 石英、金屬以及其用於半導體製造產業的混合物。該拋光 製程一般要求將晶圓抵靠於一平坦之水平旋轉拋光墊，其 通常為多孔性或纖維狀，由如聚胺基曱酸酯（p〇|yurethane) 之耐久性有機物質所製成。為了旋轉拋光墊，係施加化學 研磨漿至該旋轉墊，該化學研磨漿含有化學溶液以及研磨 顆粒，該化學溶液能夠與該晶圓物質產生化學反應，且研 磨顆粒能幫助該拋光墊物理侵蝕該晶圓之表面。將研磨漿 〇 持續地加至旋轉之CMP拋光墊上，且施加在晶圓上之雙重 化學力及機械力致使能以所要方式拋光晶圓。 在拋光的過程中，該CMP拋光墊的孔洞或纖維會被從 工件、拋光墊上磨蝕掉的碎屑以及該研磨漿中過多的研磨 顆粒所堵住，這種累積導致該拋光墊硬化（glazing)或堅硬 (hardening)，而減少其自該工件移除材料的效率，因此， 這種型態的CMP拋光墊通常使用CMP拋光墊修整器或調 整器「修整」或「調整」，於所屬技術領域中具有通常知 識者熟知各種調整器，包括使用及製造的特定方法。 3 200929348 以通常的解釋而言，該CMP拋光墊修整器係有複數鑽 石顆粒或其他顆粒突出於一基材的圓形平坦片體，在使用 時’當該抛光墊、該片體或二者在旋轉時，該片體的工作 表面係抵掣於該CMP拋光墊的拋光表面，因此，該修整器 的鑽石顆粒凸出至該拋光墊中並且移除碎屑，也能拔除（丨丨ft) 糾結（matted)的拋光墊纖維，並且製造新的凹槽，以保留 額外的研磨顆粒，因此，該拋光墊再生且能夠維持其拋光 效能。 當使用研磨漿的拋光墊已經有效達到各種拋光構型， 如抛光墊面臨各種缺點，如研磨顆粒聚集。特別的是，因 為該水平旋轉的CMP拋光墊之離心力，從研磨漿中脫離的 研磨顆粒傾向於聚集、或積聚在該拋光墊較淺的區域，因 此’當用於拋光某些材料（如較軟的金屬）時，會產生稱為「碟 形缺陷（dishing)」的不平坦凹部。另外，因為研磨顆粒無 法物理性地附著於該拋光塾，而係自由移動，因此很難藉 由簡單地增加拋光墊旋轉速度而提高將材料自工件移除材 料的速度。 另外，在固定研磨（fixed-abrasive)的CMP拋光墊中， 研磨顆粒的出現（presence)以及該等研磨顆粒的磨損情形 能使得拋光墊所提供的拋光產生不想要的改變。固定研磨 顆粒會漸漸鬆散且漸漸無法附著於該拋光墊，當這種情形 發生’該研磨顆粒能保持呈現於該拋光墊上，因此突出於 該拋光墊的距離大於埋設之顆粒，且能刮除或損壞所被抛 光的物體。同樣地’當埋設之顆粒漸漸從該CMP拋光墊移 出（dislodge)，會在顆粒的位置產生間隙（v〇id)，而減少在 200929348 該間隙位置的掘光，增加鄰近埋設之顆粒的工作負荷β 為了讓·-由如-移徐之研磨顆粒、不恰當的修整或不一致_200929348 VI. Description of the Invention: [Technical Field] The present invention relates to a method and system for in-situ (jn-Situ) monitoring of chemical mechanical planarization. Accordingly, the present invention relates to the fields of chemical engineering, semiconductor technology, and materials science. [Prior Art] Chemical mechanical planarization or CMP has become a widely used technique for removing materials from a workpiece. In particular, the computer manufacturing industry relies heavily on cMP processes to polish wafers made from a variety of materials, including ceramics, germanium, glass, quartz, metals, and their blends for the semiconductor manufacturing industry. The polishing process generally requires that the wafer be placed against a flat, horizontally rotating polishing pad, which is typically porous or fibrous, made of a durable organic material such as polyfluorenyl phthalate (p〇|yurethane). . In order to rotate the polishing pad, a chemical polishing slurry is applied to the rotating pad, the chemical polishing slurry containing a chemical solution and abrasive particles capable of chemically reacting with the wafer material, and the abrasive particles can help the polishing pad physically erode the The surface of the wafer. The slurry is continuously applied to the rotating CMP pad and the dual chemical and mechanical forces applied to the wafer enable the wafer to be polished in the desired manner. During the polishing process, the holes or fibers of the CMP pad may be blocked by debris from the workpiece, the polishing pad, and excessive abrasive particles in the slurry, which accumulation causes the polishing pad to glazing. Or hardening, reducing the efficiency of removing material from the workpiece. Therefore, this type of CMP polishing pad is usually "trimmed" or "adjusted" using a CMP pad dresser or adjuster, in the technical field. Those of ordinary skill in the art are familiar with various regulators, including specific methods of use and manufacture. 3 200929348 By way of general explanation, the CMP pad dresser is provided with a plurality of diamond particles or other particles that protrude from a circular flat sheet of a substrate, when used, 'when the polishing pad, the sheet or both When rotating, the working surface of the sheet is against the polishing surface of the CMP polishing pad, so that the diamond particles of the dresser protrude into the polishing pad and remove the debris, and can also be removed (丨丨ft) The matted polishing pad fibers are fabricated and new grooves are made to retain additional abrasive particles so that the polishing pad regenerates and maintains its polishing performance. When a polishing pad using a slurry has been effectively achieved in various polishing configurations, such as polishing pads, various disadvantages such as abrasive particle aggregation are encountered. In particular, because of the centrifugal force of the horizontally rotating CMP pad, the abrasive particles detached from the slurry tend to aggregate or accumulate in the shallower areas of the polishing pad, thus 'when used to polish certain materials (eg, In the case of a soft metal, an uneven recess called a "dishing" is generated. In addition, since the abrasive particles are not physically attached to the polishing crucible and are free to move, it is difficult to increase the speed at which the material is removed from the workpiece by simply increasing the rotational speed of the polishing pad. Additionally, in fixed-abrasive CMP polishing pads, the presence of abrasive particles and the wear of such abrasive particles can cause undesirable changes in the polishing provided by the polishing pad. The fixed abrasive particles will gradually loosen and gradually become unable to adhere to the polishing pad. When this happens, the abrasive particles can remain on the polishing pad, so that the polishing pad is larger than the buried particles and can be scraped or Damage to the object being polished. Similarly, when the embedded particles gradually dislodge from the CMP pad, a gap (v〇id) is generated at the position of the particles, and the digging at the gap position at 200929348 is reduced, increasing the workload of the adjacent buried particles. β In order to make the -----------------
(un-tuned)拋光條件等情形所產生的損害最小化，該CMP 拋光墊、CMP拋光墊調整器和/或被拋光之物體能使用下述 方法來檢測’藉此能調整處理條件，以改善拋光和修整過 ' 程。可惜的是’此方法表示晶圓會表現出刮痕或其他損害 和/或晶圓會在拋光和修整參數適當調整前處於拋光程序 中。此外’為了最佳的拋光效果而讓系統最適化或一致化 © 而在拋光步驟和/或調整步驟之間進行小的調整必須耗費大 量的時間。 【發明内容】 本發明提供化學機械平坦化過程原位（in_situ)監測的系 統與方法。該系統包括一 CMP拋光塾，一具有至少一半透 明部的CMP拋光墊修整器以及一光學感應器，該光學感應 器係能建構為透過該CMP拋光墊修整器的半透明部而光學 性地與該拋光墊結合。藉由使用這種系統，該CMp能在使 © 用時被監測，且能監測加工的情況而不需要停止拋光和/或 修整；再者’該系統在完整性下降（丨ntegrjty degradatj〇n) 後無需移除該CMP拋光墊、CMP拋光墊調整器或二者的 部份材料即能監測。事實上這種系統對於很多目前正在操 作之CMP系統需要有最小化的調整。 °亥系統能監測CMP的條件，如研磨漿圖案（S|urry Patte「ns)和脫落物圖案（slough patterns)，以及該CMP樾The damage caused by (un-tuned) polishing conditions and the like is minimized, and the CMP pad, CMP pad adjuster, and/or the object to be polished can be detected by the following method 'by thereby adjusting the processing conditions to improve Polished and trimmed. Unfortunately, this method indicates that the wafer will exhibit scratches or other damage and/or the wafer will be in the polishing process before the polishing and trim parameters are properly adjusted. In addition, the system is optimized or consistent for optimum polishing results. It takes a lot of time to make small adjustments between the polishing step and/or the adjustment step. SUMMARY OF THE INVENTION The present invention provides systems and methods for in-situ monitoring of chemical mechanical planarization processes. The system includes a CMP polishing pad, a CMP pad dresser having at least half of the transparent portion, and an optical sensor that can be optically configured to transparently pass through the translucent portion of the CMP pad dresser The polishing pad is bonded. By using such a system, the CMp can be monitored while it is being used, and the processing can be monitored without the need to stop polishing and/or trimming; in addition, the system is degraded in integrity (丨ntegrjty degradatj〇n) It can be monitored without removing some of the material of the CMP pad, CMP pad adjuster or both. In fact, this system requires minimal adjustments for many of the CMP systems currently in operation. The °H system can monitor CMP conditions such as slurry pattern (S|urry Patte "ns" and slough patterns), and the CMP樾
光墊和CMP拋光墊修整器的條件，cMP拋光墊的條件包 括如埋叹之顆粒的出現、埋設之顆粒的磨損情形以及CMP 200929348 抛光塾的耗損；同樣地，CMP拋光墊修整器的條件包括如 —埋-設之顆粒的出現以及磨損情形。 _ 本發明也呈現原位監測一化學機械平坦化法之至少一 態樣的方法。在一態樣中，這種方法包括以一 CMP拋光墊 修整器修整一 CMP拋光墊，該CMP拋光墊修整器具有至 ' 少一半透明部，該方法尚包含透過該CMp拋光墊修整器觀 測（view)化學機械平坦化的效能特性。在一態樣中，該方法 也可包括在化學機械平坦化過程中調整一操作參數，以回 © 應所觀測到的效能特性。 同樣地，增進CMP拋光墊調整的方法包括以一具有至 少一半透明部之CMP拋光墊修整器修整一 CMP拋光墊， 該方法尚包括透過該CMP拋光墊修整器半透明部觀測化學 機械平坦化過程的效能特性，且調整一操作參數，以回應 該所觀測之效能特性，這種調整能夠使得該效能特性最佳 化。 現在僅概括性且較廣地描述出本發明的各種特徵，因 〇 此在接下來的詳細說明中可更進一步地理解，並且在本領 域所做的貢獻可能會有更佳的領會，而本發明的其他特徵 將會從接下來的詳細說明及其附圖和申請專利範圍中變得 更為清晰，也可能在實行本發明時得知。 【實施方式】 在揭露與敘述本發明之前，需要了解本發明並非限制 於在此所揭露之特定的結構、方法步驟以及材料，而是可 延伸至所屬技術領域具通常知識者能思及之等效結構、方 法步驟及材料’而以下說明中所使用專有名詞的目的只是 200929348 在敘述特定實施例，並非意欲對本發明有任何的限制。 值:得注意的是在本說明書及其申請專利範圍所侮用的 早數型態字眼如「一」和「該」，除非在上下文中清楚明 白的指示為單數，不然這些單數型態的先行詞亦包括複數 對象，因此例如「- CMP拋光塾修整氣」包括一個或多個 這樣的修整器，「一操作參數」包括一個或多個這種操作 參數，「該顆粒」包括一個或多個這種顆粒。 定義 © 以下是在本發明的說明及專利範圍中所出現之專有名 詞的定義。 所述的「實質上（substantially)」是指步驟、特性、性 質、狀態、結構、項目或結果的完全、接近完全的範圍或 程度。例如，當二個或多個物體被指出彼此之間間隔有— 「實質上」一致的距離，一物體「實質上」為半透明 (translucent)係指該物體係完全透明或幾乎完全透明，實質 上半透明也可包括透明。而離絕對完全確實可允許的偏差 〇 可在不同情況下依照說明書上下文來決定。然而，通常來 說接近元全就如同獲得絕對或完整的完全具有相同的總體 結果。所述的「實質上地」在當使用於負面含意亦同等適 用’以表示完全或接近完全缺乏步驟、特性、性質、狀態、 結構、項目或結果。換句話說，只要沒有可測量的影響， 一「實質上沒有」一成分或元件仍可實際上包含這個項目。 「修整（dressing)」和「調整（conditioning)」係可互換 的’其係指藉由從拋光墊移除碎屑而再生一 CMP拋光墊的 過程’也能選擇性地拔除（lift)糾結（matted)的拋光墊纖維， 200929348 並且製造新的凹槽。同樣地，「修整器（d「esser)」和「調 整器（conditioner)」能夠交換.使用，且係指用於修整 的裝置。 這裡所述的複數組成物，基於方便可出現在_般的常 見列舉令，然而這些列舉可解釋為列舉中的單一構件單獨 或個別地被定義’因此，這樣列舉中的單—構件不能視為 任何單獨基於在—般族群中無相反表示之解釋的相㈣舉 中實際上相等的其他構件。 漠度、數量、顆粒粒徑、體積以及其他數值上的資料 可是以範圍的形式來加以呈現或表示，而需要瞭解的是這 種範圍形式的使用僅基於方便性以及簡潔，因此在解釋時， 應具有相當的彈性，不僅包括在範圍中明確顯示出來以作 為限制之數值，同時亦可包含所有個別的數值以及在數值 範圍中的次範圍，#同每一個數值以及次範圍被明確地引 述出來一般。 例如一個數值範圍「約1到約5」應該解釋成不僅僅 包括明確引述出來的大'約！到大約5,同時還包括在此指 定範圍内的每一個數值以及次範圍，因此，包含在此一^ 值範圍中的每一個數值，例如2、3及4，或例如 以及3-5等的次範圍等，也可以是個別的,、2、34 此相同原則適用在僅有引述—數值的範圍中，再者和這5樣 的闡明應該能應用在無論是一範圍的幅度或所述的特徵 中0 本發明 發現化學機械平坦化能被原位監測，、士接+ 接·種在過程中的 8 200929348 監測能更了解處理過程，除此之外，所集合的資訊能用以 改善在處理過程十啲化學機械平坦化程序。在此所迷的系 統以及方法更有助於對目前所使用之設備以及系統作所需 之最j化調€纟^態樣中，纟此所述的系統與方法仰 賴透過—CMP拋光墊修整器之半透明部而光學感應該加工 •過程。在一態樣中，該半透明部為該CMP拋光墊修整器的 貫〜部份，因此能夠在該修整器之物理形狀或外觀沒有太 大的重組情況下進行監測，用此方法無需從該修整器移除 © 材料或選擇性移除研磨顆粒，該修整器結構堅固 (structurally sound)，而且能用於大多數目前有的設備。 根據在此所述的實施例，提供可應用於各原位監測系 統、原位監測方法以及改善CMP拋光墊條件之方法的各種 細節。因此，一特定實施例的討論係與其他相關實施例之 上下文的討論相關且獲得支持。 有很多晶圓之C Μ P拋光墊拋光的端點偵測系統以及方 法。在這種端點偵測系統中，由不同於拋光墊之材料所製 〇 成的視窗係配合該拋光墊，而在拋光時以雷射光束朝向該 晶圓’反射的光線反應該晶圓層的粗糙度和/或組成。此技 術係在拋光銅的時候一起使用，而非銅材料（即氮化组阻障 層）的露出即為該拋光程序結束的指示。The conditions of the light pad and the CMP pad dresser, the conditions of the cMP pad include the presence of particles such as smear, the wear of the embedded particles, and the wear of the CMP 200929348 polishing pad; likewise, the conditions of the CMP pad dresser include Such as the appearance of burial particles and wear. The present invention also presents a method of monitoring at least one aspect of a chemical mechanical planarization method in situ. In one aspect, the method includes trimming a CMP pad with a CMP pad dresser having at least half of the transparent portion, the method further comprising observing through the CMp pad dresser ( View) The performance characteristics of chemical mechanical planarization. In one aspect, the method can also include adjusting an operating parameter during the chemical mechanical planarization to return to the observed performance characteristics. Similarly, a method of enhancing CMP pad adjustment includes trimming a CMP pad with a CMP pad dresser having at least half of a transparent portion, the method further comprising observing a chemical mechanical planarization process through the CMP pad dresser translucent portion. The performance characteristics, and adjusting an operational parameter to reflect the observed performance characteristics, such adjustment can optimize the performance characteristics. The various features of the present invention are now described broadly and broadly, as they may be further understood in the following detailed description, and may be better appreciated in the field. Other features of the invention will become apparent from the Detailed Description, the appended claims and the appended claims. The present invention is not limited to the specific structures, method steps, and materials disclosed herein, but may be extended to those of ordinary skill in the art. The structure of the invention, the method steps, and the materials are used for the purpose of describing the specific embodiments, and are not intended to limit the invention in any way. Value: It should be noted that the early-type words such as "a" and "the" are used in the specification and the scope of the claims, unless the singular is clearly indicated in the context, otherwise the singular type is advanced. The term also includes plural objects, such as "- CMP polishing 塾 trimming gas" includes one or more such trimmers, "an operating parameter" includes one or more of such operating parameters, and "the particle" includes one or more This kind of particles. DEFINITIONS © The following are definitions of proprietary terms that appear in the description and patent claims of the present invention. By "substantially" is meant a complete, near-complete range or extent of a step, characteristic, nature, state, structure, item, or result. For example, when two or more objects are indicated to have a "substantially" consistent distance from each other, an object "substantially" translucent means that the system is completely transparent or nearly completely transparent, substantially Upper translucency may also include transparency. Deviations from absolute absolute allowable 〇 can be determined in different situations according to the context of the manual. However, it is usually close to the meta-completion as if it were absolutely or completely identical with the same overall result. The phrase "substantially" when used in a negative sense is equally applicable to mean completely or nearly completely lacking steps, characteristics, properties, states, structures, items or results. In other words, a "substantially no" component or component can actually contain the item as long as there is no measurable effect. "dressing" and "conditioning" are interchangeable 'which refers to the process of regenerating a CMP pad by removing debris from the polishing pad' and can also selectively lift tangles ( Matted) polishing pad fiber, 200929348 and manufactures new grooves. Similarly, "diseker" (d"esser" and "conditioner" can be exchanged, used, and referred to as a device for trimming. The plural compositions described herein may be present in a common list order based on convenience, however, these enumerations may be interpreted as a single component in the list being defined individually or individually 'Thus, such a single member in the list cannot be regarded as Any other component that is actually equal based on the phase (4) that is not interpreted in the opposite sense in the general population. Indifferentness, quantity, particle size, volume, and other numerical data may be presented or represented in a range, and it is to be understood that the use of such a range of forms is based on convenience and simplicity, so when interpreted, It should be fairly flexible, including not only the numerical values that are explicitly shown in the range as a limitation, but also all individual values and sub-ranges in the range of values, with each numerical value and sub-range being explicitly quoted. general. For example, a range of values "about 1 to about 5" should be interpreted to include not only the large quotes that are explicitly quoted! Up to about 5, including every value and sub-range within the specified range, therefore, each value included in the range of values, such as 2, 3, and 4, or for example, 3-5, etc. The sub-range, etc., can also be individual, 2, 34. The same principle applies to the range of quote-value only, and the 5 clarifications should be applicable to either the range of magnitude or the stated In the feature of the invention, it is found that the chemical mechanical planarization can be monitored in situ, and that the monitoring can better understand the processing process, in addition to the monitoring, in addition, the collected information can be used to improve The process of the Shiyan chemical mechanical flattening process. The systems and methods disclosed herein are more conducive to the most versatile aspects of the equipment and systems currently in use, and the systems and methods described herein rely on the CMP pad polishing. The translucent portion of the device optically senses the process and process. In one aspect, the translucent portion is a portion of the CMP pad dresser, so that monitoring can be performed without much reorganization of the physical shape or appearance of the dresser. The dresser removes the © material or selectively removes the abrasive particles. The trimmer is structurally sound and can be used in most existing devices. In accordance with the embodiments described herein, various details are provided that are applicable to various in situ monitoring systems, in situ monitoring methods, and methods of improving CMP pad conditions. Accordingly, the discussion of a particular embodiment is related to and supported by the discussion of the context of other related embodiments. There are many wafer C Μ P polishing pad polished endpoint detection systems and methods. In such an end point detection system, a window made of a material different from the polishing pad is fitted to the polishing pad, and the polishing layer reflects the wafer layer with light reflected from the laser beam toward the wafer during polishing. Roughness and / or composition. This technique is used together when polishing copper, and the exposure of the non-copper material (i.e., the nitride layer barrier layer) is an indication of the end of the polishing process.
而本案的揭露很少提出有侵略性的方法以及設備，其 能夠監測且對於各種加工條件以及因素（包括監測的非端點 基本條件以及因素）產生一致的即時回應（even reahtime response)。再者，所述的方法以及裝置不僅能夠用於拋光， 還能用於以CMP拋光墊修整器修整一 CMP拋光墊。CMP 200929348 拋光墊的調整並無端點偵測，而是當拋光速率變得太低和/ 或當刮蝕-速率趁過一定的門檻(threshold)時替換該GMP振 光墊，這種情況是該CMP拋光墊修整器自然使用以及磨損 的結果：該修整器尖端的鈍化，當該CMP拋光墊修整器的 最高尖端被磨損時’該等被磨損的尖端支撐工作負荷，最 後較低的尖端會因為該等被磨損之尖端而無法被壓掣而穿 過該拋光墊的表面，而接著該拋光墊表面由於切割碎屑的 累積而變滑，然後該晶圓的移除率顯著地衰退，且刮蝕速 〇 率增加。 藉著拋光墊調整時的原位監測能監測各種參數，如該 專切割尖端的穿透情形、凹槽尺寸、凹槽的數目以及凹槽 的圖案。若該凹槽變寬且其數目減少，則修整的效率會降 低。這種參數能被量化，且其中能用以預測移除率的衰減。 當修改修整和/或拋光的條件以產生較佳的設備磨損，且與 修整和/或拋光條件一致，能利用這種數據指出時間。如一 非限制性的範例，當修整器的顆粒開始磨損時能施以較大 ® 的力量，藉此能保持形成凹槽的效率，因此延長修整器和/ 或CMP拋光墊的壽命，藉由增加CMp拋光墊調整器的壽 命，不僅降低操作成本，還能增加產能以及效率，即能延 長機器停工期之間的時間。 在一實施例中，原位監測化學機械平坦化過程之系統 包括一 CMP拋光墊以及一 CMP拋光墊修整器。該CMp拋 光墊修整器至少-部分為半透明的，一光學感應器係能建 構為透過該CMP拋光墊修整器的半透明部而光學性地與該 拋光墊結合，因此能原位監測化學機械平坦化。由於至少 200929348 部份的 CMP拋光墊修整器為半透明，該光學感應器能夠穿 過該材料觀測該CMP拋光墊.以及CMp拋光墊修整舊的玉 作表面，這種監測無須干擾處理過程即可達成。該光學感 應器透過該CMP拋光墊修整器而光學性地與該拋光墊結 合，該感應器不會干擾或減損處理過程或工件的整體性。 該CMP拋光墊的半透明程度和區域皆可不同。該cMp 拋光墊的半透明區域可為預先決定用於監測的區域；再者， 該CMP拋光墊修整器的大部分或甚至實質上為全部皆為實 © 質上半透明的，其中半透明區域係大於光學感應器所需的， 而額外的感應器能包含在設計中，或一單一光學感應器能 建構為監測多於一個區域，在後者的情形中，該光學感應 器能在處理過程中、在處理步驟之間（如在修整作用之間）或 任意地、依監測需要以及加工過程允許的任何時間重新定 位0 在一態樣中，該CMP拋光墊修整器可為實心的。在這 種情形中，該光學感應器通常能建構為從該CMp拋光墊修 〇 整器的背面觀測該CMP拋光墊，因此，該CMp拋光墊修 整器提供一光學感應器能藉此觀測的區域，但仍保持一實 心且元整之修整器的特性。如一非限制性的範例，該修整 器不具有視窗或其他間隙，再者，該修整器並無其他材料 在該實心修整器（即視窗）中。在另一種設置中，該光學感應 器能建構為穿過該CMP拋光墊修整器的側邊而光學性地與 該C Μ P抛光塾結合。 雖然該CMP拋光墊修整器的任何部分能為半透明或透 明的’以使知一光學感應器能作用，在一實施例中，該C μ ρ 11 200929348 拋光墊修整器的半透明或透明部係一碟狀修整器的中央區 •域。很多目前使用之CMP.翁光會修登器.包括一缺乏切割尖 端的中央部，因此，一孔洞能刺穿或設置於此區域。在一 態樣中，該孔洞能堵住或吻合於一玻璃片、壓克力片或其 他半透明或透明材料片。在另一態樣中，該孔洞包括一有 機材料或實質上由一有機材料所組成。在另一實施例中， 該CMP拋光墊修整器的整個背面（backing)為半透明或透明 的，如樹脂。 雖然任何型態的材料皆能用於製造一 CMP拋光墊修整 器’其係半透明而能用於製造一態樣之CMP拋光墊修整器 的半透明區，但該CMP拋光墊修整器能包括固化的有機材 料。該固化的有機材料之非限制性的範例包括胺基樹脂 (amino resins)、壓克力樹脂（acrylate resins)、醇酸樹脂 (alkyd resins)、聚酯樹脂（polyester resins)、聚醯胺樹脂 (polyamide resins)、聚亞酿胺（polyimide resins)、聚氨酯 (polyurethane resins)、紛搭樹月旨（phenolic resins)、盼搭 / 乳膠樹脂（phenolic/latex resins)、環氧樹脂（epoxy resins)、異氰酸樹脂（isocyanate resins)、異氰酸酯樹脂 (isocyanurate resins)、聚矽氧烧樹月旨（polysiloxane resins)、反應性乙烯基樹月旨（reactive vinyl resins)、聚乙 稀樹脂（polyethylene resins)、聚丙稀樹月旨（polypropylene resins)、聚苯乙稀樹脂（polystyrene resins)、聚苯氧基樹 脂（phenoxy resins)、二萘喪苯樹月旨（perylene resins)、聚 職樹脂（polysulfone resins)、丙稀-丁二稀-苯乙稀樹脂 (acrylonitrile-butadiene-styrene resins)、丙稀酸樹脂 12 200929348 (acrylic res ins)以及聚碳酸酯樹脂（p〇|yCarb〇nate resjns)。 在一特定的實施-例电-r•該…C M p:拋光_墊修整器包括環氧樹脂 或實質上由環氧樹脂所組成。在另一特定的實施例中，該 CMP拋光墊修整器包括聚氨酯樹脂或實質上由 所組成。在又-實施例中，該CMP抛光塾修整器包括^ 酿胺或實質上由聚亞醯胺所組成。 許多添加物能包含在該有機材料中以助於使用。例如， 可使用額外的交聯劑以及填充劑以促進該有機材料層的硬 ©化特性。此外，能使用溶劑以改變該有機材料在未硬化狀 態的特性。而且，一強化材料可設置在至少一部分之硬化 的有機材料層，這種強化材料可用於增強該有機材料層的 強度，且因此再改善該超研磨顆粒的保持率。在一態樣中， 該強化材料可包括陶究材料、金屬或其組合。陶变材料的 範例包括氧化魅、碳化銘、二氧化石夕、碳化石夕、氧化錐、 碳化锆以及其混合物。 ❹ 此外，在-態樣中，一交聯劑或一有機金屬化合物可 塗佈於各超研磨顆粒的表面，以有助於該超研磨顆粒藉由 化學鍵結㈣持在該有機材料基f中的保持卜使用於製 造CMP拋光墊修整器的各種樹脂在美國申請案第 1 1/223,786號中討論到，且結合於此做為參考。產生半透The disclosure of this case seldom proposes aggressive methods and equipment that can monitor and produce a consistent reahtime response to various processing conditions and factors, including monitored non-endpoint basic conditions and factors. Moreover, the described method and apparatus can be used not only for polishing, but also for trimming a CMP pad with a CMP pad dresser. CMP 200929348 The polishing pad is adjusted without endpoint detection, but instead when the polishing rate becomes too low and/or when the scratch-rate is over a certain threshold, the GMP pad is replaced. The natural use of the CMP pad dresser and the result of wear: the passivation of the tip of the dresser, when the highest tip of the CMP pad dresser is worn, the worn tip supports the workload, and the lower tip is because The worn tip is unable to be crushed through the surface of the polishing pad, and then the polishing pad surface becomes slippery due to the accumulation of cutting debris, and then the removal rate of the wafer is significantly degraded and scraped The rate of eclipse increases. In-situ monitoring by polishing pad adjustment can monitor various parameters such as the penetration of the cutting tip, the size of the groove, the number of grooves, and the pattern of the grooves. If the groove is widened and the number thereof is reduced, the efficiency of trimming is lowered. This parameter can be quantified and can be used to predict the attenuation of the removal rate. This data can be used to indicate time when the conditioning and/or polishing conditions are modified to produce better equipment wear and consistent with conditioning and/or polishing conditions. As a non-limiting example, when the particles of the dresser begin to wear, a greater amount of force can be applied, thereby maintaining the efficiency of forming the grooves, thereby extending the life of the dresser and/or CMP pad by increasing The life of the CMp polishing pad adjuster not only reduces operating costs, but also increases productivity and efficiency, which increases the time between machine downtimes. In one embodiment, the system for monitoring the chemical mechanical planarization process in situ includes a CMP pad and a CMP pad dresser. The CMp polishing pad conditioner is at least partially translucent, and an optical sensor can be constructed to optically bond with the polishing pad through the translucent portion of the CMP pad conditioner, thereby enabling in situ monitoring of chemical machinery flattened. Since at least part of the 200929348 CMP pad dresser is translucent, the optical sensor can observe the CMP pad through the material and the CMp pad to trim the old jade surface without disturbing the process. Achieved. The optical sensor is optically coupled to the polishing pad through the CMP pad dresser, the sensor does not interfere with or detract from the integrity of the process or workpiece. The degree of translucency and area of the CMP pad can vary. The translucent area of the cMp polishing pad can be pre-determined for monitoring; further, most or even substantially all of the CMP pad dresser is translucent, wherein the translucent area More than the optical sensor required, and additional sensors can be included in the design, or a single optical sensor can be constructed to monitor more than one area, in the latter case, the optical sensor can be processed Repositioning 0 between processing steps (eg, between trimming effects) or arbitrarily, as needed for monitoring, and at any time allowed by the process. In one aspect, the CMP pad dresser can be solid. In this case, the optical sensor can generally be constructed to view the CMP pad from the back of the CMp pad repairer, so that the CMp pad conditioner provides an area from which the optical sensor can be viewed. However, it still maintains the characteristics of a solid and integral trimmer. As a non-limiting example, the trimmer does not have a window or other gap, and in addition, the trimmer has no other material in the solid trimmer (i.e., the window). In another arrangement, the optical sensor can be constructed to optically bond with the C Μ P polishing pad through the sides of the CMP pad conditioner. Although any portion of the CMP pad dresser can be translucent or transparent to enable a known optical sensor to function, in one embodiment, the C μ ρ 11 200929348 polishing pad conditioner is translucent or transparent. The central area of the dish trimmer. Many of the currently used CMP. Weng Guanghui repairers include a central portion that lacks a cutting tip, so that a hole can be pierced or placed in this area. In one aspect, the aperture can be blocked or anastomosed to a piece of glass, acrylic or other translucent or transparent material. In another aspect, the aperture comprises an organic material or consists essentially of an organic material. In another embodiment, the entire backing of the CMP pad conditioner is translucent or transparent, such as a resin. While any type of material can be used to fabricate a CMP pad dresser that is translucent and can be used to fabricate a translucent area of a CMP pad dresser, the CMP pad dresser can include Cured organic material. Non-limiting examples of the cured organic material include amino resins, acrylate resins, alkyd resins, polyester resins, and polyamide resins ( Polyamide resins), polyimide resins, polyurethane resins, phenolic resins, phenolic/latex resins, epoxy resins, Isocyanate resins, isocyanurate resins, polysiloxane resins, reactive vinyl resins, polyethylene resins, polypropylene Polypropylene resins, polystyrene resins, phenoxy resins, perylene resins, polysulfone resins, propylene -acrylonitrile-butadiene-styrene resins, acrylic resin 12 200929348 (acrylic res ins) and polycarbonate resin (p〇|yC Arb〇nate resjns). In a particular implementation - an example of electricity - r • the ... C M p: polishing _ pad conditioner includes epoxy or consists essentially of epoxy. In another particular embodiment, the CMP pad dresser comprises or consists essentially of a polyurethane resin. In still another embodiment, the CMP polishing 塾 conditioner comprises or consists essentially of polyamine. Many additives can be included in the organic material to aid in use. For example, additional crosslinking agents and fillers can be used to promote the hard acidation characteristics of the organic material layer. Further, a solvent can be used to change the properties of the organic material in an uncured state. Moreover, a reinforcing material may be disposed on at least a portion of the hardened organic material layer, which reinforcing material may be used to enhance the strength of the organic material layer, and thus to improve the retention of the superabrasive particles. In one aspect, the reinforcing material can comprise a ceramic material, a metal, or a combination thereof. Examples of ceramic materials include oxidizing, carbonizing, sulphur dioxide, carbon carbide, oxidizing cones, zirconium carbide, and mixtures thereof. Further, in the aspect, a crosslinking agent or an organometallic compound may be coated on the surface of each superabrasive particle to facilitate the superabrasive particle being held in the organic material group f by chemical bonding (4) A variety of resins for use in the manufacture of CMP pad dressers are discussed in U.S. Patent Application Serial No. 1 1/223,786, the disclosure of which is incorporated herein by reference. Produce semi-transparent
明實心物質的樹脂能個別使用或結合使用，以產生—CMP 拋光墊修整H的半透明部或半透明體，而用於本發明所述 的系統與方法中。 卿拋光塾修整器的半透明部而光學性地座 拋光塾結合’以供觀察和監測各種與該處理過㈣ 13 200929348 (即該修整過程和該CMP二者）和該CMP拋光墊與該CMP 拋光墊修整器其中之二或二者條件有關的各種特徵.飞能I 測該流體以及碎屑在化學機械平坦化過程中相遇的動向， 如研磨漿圖案以及脫落物圖案。該研磨漿或用於幫助CMp 化學部份之流體的監測能洞悉複雜的拋光過程。研磨漿的 動向會影響至少一部份的拋光，再者，研磨漿圖案可洞悉 與該CMP拋光墊、CMP拋光墊修整器以及欲被拋光之物 的化學和/或物理交互作用。而且，了解研磨漿圖案可洞悉 © 最適化的設備旋轉或其他速度，也洞悉從CMP拋光墊引入 或移除流體的最適化方法。 同樣的’脫落物圖案能洞悉拋光和修整。脫落物的動 向此解釋、甚至預測一 CMP樾光墊的物理狀態。通常脫落 物會導致CMP拋光墊的不利情形，如碟形缺陷（dishing)。 些CMP拋光墊能建構為使脫落物的均勻流通過該cMF> 拋光墊直到其被移除為止，其他的CMp拋光墊則可建構為 私疋的流體和指定的脫落物路徑。當藉由一 CMp拋光墊整 ❹胃的半透明部而被監測時，無論想要的脫落物動向為何， 壺月b被知悉。在此所述的方法與系統能同時用以監測多於 個樣的化學機械平坦化程序。—範例為研磨聚和脫落 物机的圖案，通常的情況係研磨漿涵蓋（picks up)脫落物且 二者無法完全區分。具有研磨漿和脫落物流圖案二者的研 磨漿和/或脫落物能明顯地轉變成促進與所使用之光學感應 器的相容性。非限制性的範例包括具有顆粒狀結晶結構的 粒子、著色劑或丨R活性添加物。在此所述的這種原位監測 不須是連續性的，而要能在處理過程中具有小的時間間隔 14 200929348 (設備允許範圍）的情況下執行。 …本發明〜之為.統能用=以4貞測該CMP —抛_光塾一個或多.俯-物. 理態樣和/或效能態樣。該CMP拋光墊負責對欲拋光或平 坦化的物體進行拋光，該CMP拋光墊提供機械研磨，且一 般保持或保留使用於過程中的化學研磨漿。當超過一 CMP 拋光墊的使用壽命時’直接磨蝕的效果會降低，且其表面 更會被脫落物的滯留和/或刮银該表面而被影響，且可能被 研磨漿的化學侵姓而被影響。為了抵銷一些這種力量，該 © CMp拋光墊能藉由一 CMP拋光墊修整器而被修整或調整。 可惜的是，雖然調整過程有助於CMP拋光墊，但時間 久了 ’該調整過程會磨損且可能損害該CMP拋光墊，因此， 該CMP拋光墊的工作表面會因為使用而規則地變化，然而 無論該CMP拋光墊的老化程度’重要的是監測該cmΡ樾 光墊的情況’以確保適當的抛光或平坦化。原位監測的系 統能在使用時進行監測。例如這種監測包括在修整時該CMp 拋光墊的粗糙度、凹槽的數目以及凹槽的平均寬度等。 〇 能監測該CMP拋光墊的各種態樣。在一態樣中，該CMp 拋光墊包括埋設之顆粒，通常埋設之顆粒包括研磨顆粒， 如鑽石、立方氮化硼、氧化鋁、氧化锆以及碳化鎢，放置 這種顆粒以配合一預先決定之圖案，或能隨意地放置在該 CMP拋光墊的工作表面上。本發明之系統係建構為感應在 CMP拋光墊中埋设之顆粒的出現，一或多個埋設之顆粒的 損失會增加其他顆粒的工作負荷，且會刮蝕欲拋光之物體， 而且還會在顆粒附著之處留下間隙，因此，顆粒保持率有 助於監測，若正在進行原位監測’則當一顆粒不再為埋入 15 200929348 的，則能向系統提供警告，且讓系統立即執行減少顆粒損 :—失或遺漏之谮在不良影響-的翁翁r毋者，該光學感應器能 建構為感應在該CMP拋光墊中埋設之顆粒的保持率程度， 該保持率程度能用以在顆粒從該CMP拋光墊脫離之前預期 顆粒的損失。 在某種CMP拋光墊中一起作用的個別埋設之顆粒對於 CMP的機械研磨態樣負責，該顆粒的角度與尖銳度能指出 所能提供何種型態（侵略性至鈍化）的研磨。當該等顆粒變 〇 鈍，欲被拋光的物體可需要額外的處理時間和/或較多的處 理壓力。在一態樣中，本發明之系統能建構為感應埋設之 顆粒的情況；同樣地，無論在該CMP拋光墊中是否出現埋 設之顆粒，該光學感應器能夠建構為感應一 CMp拋光墊的 消耗情況，這種消耗情況係基於所述的參數，包括但不限 制在脫落物圖案及組成、顆粒出現（part丨·c|e presence)、顆 粒磨損、CMP拋光墊的輪廓、預先決定和確認之拋光墊的 缺陷、調整之效率等。 P 在一些態樣中’ 一系統能建構為監測CMP拋光墊修整 器的態樣，就此而論，一 CMP拋光墊修整器有很多態樣能 受到監測，C Μ P拋光墊修整器常常包括埋設之顆粒，故能 監測該等顆粒的出現與情況。能被監測之效能態樣非限制 性的範例包括埋入該CMP拋光墊修整器之顆粒的出現、埋 設之顆粒的保持率程度、埋設之顆粒的磨耗情形以及CMp 拋光墊修整器的一般磨耗情形。 該光學感應器係與CMP拋光塾和CMP抛光塾調整器 涵蓋於系統令’其可為任何能透過一 CMP拋光墊修整器之 200929348Resins of solid materials can be used individually or in combination to produce a translucent or translucent body of a CMP pad to trim H for use in the systems and methods of the present invention. Clearing the translucent portion of the 塾 trimmer and optically polishing the 塾 in combination with 'for observation and monitoring of various treatments with (4) 13 200929348 (ie both the trimming process and the CMP) and the CMP polishing pad and the CMP Each of the polishing pad conditioners has two or more conditions related to it. The energy can measure the movement of the fluid and debris during the chemical mechanical planarization, such as the slurry pattern and the shedding pattern. The slurry or monitoring of the fluid used to assist the chemical portion of the CMp provides insight into the complex polishing process. The movement of the slurry affects at least a portion of the polishing, and further, the slurry pattern provides insight into the chemical and/or physical interaction with the CMP pad, the CMP pad dresser, and the object to be polished. Moreover, understanding the slurry pattern can provide insight into the optimum equipment rotation or other speeds, as well as the optimum method of introducing or removing fluid from the CMP pad. The same 'shedding pattern' provides insight into polishing and finishing. The movement of the detachment explains and even predicts the physical state of a CMP pad. Often the shedding can cause undesirable conditions for CMP pads, such as dishing. Some CMP polishing pads can be constructed such that a uniform flow of exfoliated material passes through the cMF> polishing pad until it is removed, and other CMp polishing pads can be constructed as a private fluid and a specified shedding path. When the translucent portion of the stomach is monitored by a CMp polishing pad, the pot b is known regardless of the desired movement of the shedding. The methods and systems described herein can be used simultaneously to monitor more than a variety of chemical mechanical planarization procedures. - The example is a pattern of abrasive poly- and shedding machines, in which case the slurry picks up the shedding and the two cannot be completely distinguished. The abrasive slurry and/or shedding material having both the slurry and the shedding stream pattern can be significantly converted to promote compatibility with the optical sensor used. Non-limiting examples include particles having a particulate crystalline structure, a colorant or a 丨R active additive. Such in-situ monitoring as described herein need not be continuous, but can be performed with a small time interval 14 200929348 (equipment allowable range) during processing. ... the invention is the same as the system can be used to measure the CMP - throwing _ light 塾 one or more. The CMP pad is responsible for polishing an object to be polished or flattened that provides mechanical polishing and generally retains or retains the chemical slurry used in the process. When the service life of a CMP polishing pad exceeds the service life, the effect of direct abrasion will be reduced, and the surface will be affected by the retention of the detachment and/or the silvering of the surface, and may be affected by the chemical attack of the slurry. influences. To offset some of this force, the © CMp polishing pad can be trimmed or adjusted with a CMP pad dresser. Unfortunately, although the adjustment process contributes to the CMP pad, it takes a long time 'the adjustment process will wear out and may damage the CMP pad. Therefore, the working surface of the CMP pad will change regularly due to use. Regardless of the degree of aging of the CMP pad, it is important to monitor the condition of the cm pad to ensure proper polishing or planarization. In situ monitoring systems can be monitored while in use. For example, such monitoring includes the roughness of the CMp polishing pad, the number of grooves, and the average width of the grooves during trimming. 〇 Various aspects of the CMP pad can be monitored. In one aspect, the CMp polishing pad comprises embedded particles, typically embedded particles comprising abrasive particles, such as diamond, cubic boron nitride, alumina, zirconia, and tungsten carbide, placed to match a predetermined The pattern, or can be placed on the working surface of the CMP pad at will. The system of the present invention is constructed to sense the presence of particles embedded in a CMP pad, and the loss of one or more buried particles increases the working load of the other particles and erodes the object to be polished, but also in the particles There is a gap in the attachment, so the particle retention rate is helpful for monitoring. If in-situ monitoring is in progress, then when a particle is no longer buried 15 200929348, it can provide warning to the system and let the system perform immediately. Particle damage: the loss or omission of defects in the adverse effects of the Weng Weng, the optical sensor can be constructed to sense the degree of retention of the particles embedded in the CMP polishing pad, the degree of retention can be used in The loss of particles is expected before the particles are detached from the CMP polishing pad. Individually embedded particles that act together in a CMP polishing pad are responsible for the mechanically ground state of the CMP, the angle and sharpness of the particle indicating which type of (aggressive to passivated) grinding can be provided. When the particles become blunt, the object to be polished may require additional processing time and/or more processing pressure. In one aspect, the system of the present invention can be constructed to sense the presence of embedded particles; likewise, whether or not embedded particles are present in the CMP pad, the optical sensor can be constructed to sense the consumption of a CMp polishing pad. In the case of this, the consumption is based on the parameters described, including but not limited to the shedding pattern and composition, the presence of particles (part丨·c|e presence), particle wear, contours of the CMP pad, pre-determined and confirmed. Defects in the polishing pad, efficiency of adjustment, etc. P In some aspects, a system can be constructed to monitor the appearance of a CMP pad dresser. As such, a CMP pad dresser can be monitored in many ways. C Μ P pad dressers often include burying. The particles can monitor the appearance and condition of the particles. Non-limiting examples of performance aspects that can be monitored include the presence of particles embedded in the CMP pad conditioner, the degree of retention of buried particles, the wear of buried particles, and the general wear of CMp pad dressers. . The optical sensor and CMP polishing 塾 and CMP polishing 塾 adjuster are included in the system so that it can be passed through any CMP pad dresser 200929348
半透明部而光學性與CMP拋光墊結合的任何種類，光學感 應器可為任何形文，--包括:但不限制焚丨R感應器：脈衝光感 應益（pulsating light sensor)、雷射光感應器以及光纖感應 器。在一特定實施例中，該光學感應器包括紅外線雷射器 或實質上由紅外線雷射器組成。使用於本發明之方法與系 統中的紅外線雷射器之非限制性的範例包括具有約1微米 之紅外線波長的Nd : YAG雷射器。當然也可以使用其他種 類的雷射器《再者，該光學感應器為攝影機型態的裝置， © 其係用以透過半透明部觀測（若有需要可結合燈具）該CMP 拋光墊。在這種情形中，數據能傳遞至另一位置，如用以 觀測的監測器。 在一實施例中，該光學感應器能建構為傳遞數據至一 控制器，藉此，由原位監測系統所產生的資訊能用來在過 程中調整操作參數；換句話說，一光學感應器能建構為透 過一 CMP拋光墊修整器之半透明部光學性地與一 cMp拋 光墊結合，藉此監測處理過程的情況，且又能傳遞CMp情 況的數據至一控制器，以自動調整該CMp拋光墊和/或CMp 拋光墊修整器的至少一操作參數。 在一些實施例中，包含多於一個的感應器係有幫助的， 与·種額外的感應器為一種類，其不會透過該CMp拋光墊修 整盗之半透明部與該CMP拋光墊光學性地結合，而是建構 為與該CMP拋光墊、CMp拋光墊修整器或系統其他方面 以非可視性的方法或以非透過半透明部的路徑結合。例如， 一壓力感應器可裝設在該CMp拋光墊修整器上。又如另一 範例，光學感應器係建構為從該系統的側角（Sjde angle) 17 200929348 與該CMP拋光墊修整器和/或CMP拋光墊結合，因此無法 觀測該修整器再者，-：感應器能建構為透過一 _ CIVM3.择志二 墊移除的部分光學性地結合一 CMP拋光墊修整器。還有很 多本發明之光學感應器和既有之額外感應器可能之組合的 實施例，故可了解僅能大略介紹所有可能的組合，但無法 在此詳盡的描述。 在另一排列態樣中，多於一個的光學感應器建構為透 過該CMP拋光墊修整器光學性地與該CMP拋光塾結合， Ο 為了有助於達成這種排列，複數光學感應器能建構為透過 該CMP拋光墊修整器相同的半透明部光學性地與該cmp 拋光墊結合。另外，在該CMP拋光墊修整器包括複數半透 明部的情況下’光學感應器能建構為使用至少兩個不同的 半透明部以光學性地與該C Μ P拋光墊結合。這種排列提供 較大的CMΡ拋光墊覆蓋面積’因此可能產生更準確的數 據。在該CMP拋光墊修整器實質上為半透明的情況下，該 等光學感應器能以任何方法排列以使其能夠透過該CMp拋 ® 光塾修整器而與該C Μ P拋光塾光學性結合。 該系統能用以監測一化學機械平坦化過程。一種化學 機械平坦化過程至少一種態樣的原位監測方法包括以一 CMP拋光墊修整器修整一㈣抛光墊，該cMp抛光整修 整器包括至/半透明部。該方法又包括透過該抛光 墊修整器觀測化學機械平坦化的效能特性。 實&例中，該方法尚包括在化學機械平坦化過 程中調整-操作參數，以回應所觀測到的效能特性。這種 調整為手動調整或為自動調整。在獲得數據以及調整操作 18 200929348Any type of translucent portion that is optically combined with a CMP pad, the optical sensor can be any form, including: but not limited to incinerated R sensor: pulsed light sensor, laser light sensor And fiber optic sensors. In a particular embodiment, the optical sensor comprises or consists essentially of an infrared laser. Non-limiting examples of infrared lasers for use in the methods and systems of the present invention include Nd:YAG lasers having an infrared wavelength of about 1 micron. Of course, other types of lasers can be used. "Further, the optical sensor is a camera-type device, and the CMP polishing pad is used to observe the translucent portion (if necessary, the lamp can be combined). In this case, the data can be passed to another location, such as a monitor for observation. In one embodiment, the optical sensor can be configured to communicate data to a controller whereby information generated by the in situ monitoring system can be used to adjust operating parameters during the process; in other words, an optical sensor Can be constructed to be optically coupled to a cMp polishing pad through a translucent portion of a CMP pad dresser to monitor the condition of the process and to transfer data from the CMp condition to a controller to automatically adjust the CMp At least one operating parameter of the polishing pad and/or the CMp polishing pad conditioner. In some embodiments, it may be helpful to include more than one sensor, and an additional type of sensor that does not pass through the CMp polishing pad to trim the translucent portion and the CMP pad. In combination, it is constructed to be combined with the CMP pad, CMp pad conditioner or other aspects of the system in a non-visible manner or in a path that is non-transmissive. For example, a pressure sensor can be mounted on the CMp pad dresser. As another example, the optical sensor is constructed to be combined with the CMP pad dresser and/or CMP pad from the side angle of the system 17 200929348, so the trimmer cannot be observed, -: The sensor can be constructed to optically incorporate a CMP pad dresser through a portion of the _CIVM3. There are also many embodiments of the optical sensor of the present invention and possible combinations of additional sensors, so it is understood that only a brief description of all possible combinations can be made, but it cannot be described in detail herein. In another arrangement, more than one optical sensor is configured to optically bond to the CMP polishing pad through the CMP pad conditioner, Ο to facilitate the alignment, the complex optical sensor can be constructed The optically bonded mat is bonded to the cmp polishing pad by the same translucent portion of the CMP pad conditioner. Additionally, where the CMP pad dresser includes a plurality of transflective portions, the optical sensor can be constructed to use at least two different translucent portions to optically bond to the C Μ P polishing pad. This arrangement provides a larger CMΡ polishing pad coverage area' thus may result in more accurate data. Where the CMP pad dresser is substantially translucent, the optical sensors can be arranged in any manner to enable optical coupling with the C Μ P polishing pad through the CMp polishing reticle . The system can be used to monitor a chemical mechanical planarization process. A chemical mechanical planarization process in which at least one aspect of the in-situ monitoring method comprises trimming a (four) polishing pad with a CMP pad dresser, the cMp polishing conditioner comprising a to/translucent portion. The method further includes observing the performance characteristics of the chemical mechanical planarization through the polishing pad conditioner. In the real & example, the method also includes adjustment-operating parameters during chemical mechanical planarization in response to observed performance characteristics. This adjustment is either manual or automatic. Getting data and adjusting operations 18 200929348
參數以回應該數櫨> M 據之間的時間延遲各有不同，其係依照不 目應用從即時（r抑卜tlme)至如二拋光步輝期間。修整對於 CMP搬光塾從較舊的至較新的cMp拋光墊有不同的影響， 因此，一個觀測到的效能㈣包括修整的程度，若該修整 太具有侵略性，則能在修整時調整；同樣地，若修整不夠 具有侵略性，其可調整以達到一最理想的修整過程。 在—特定的實施例中，為了增進CMP拋光塾調整過程 的方法包括以- CMP拋光墊修整器修整一 CMp抛光塾， ©—效能特性能透過該CMP抛光塾修整器的半透明部而觀 測，能調整一操作參數以回應所觀測到的效能特性，以使 得該效能特性最適化。在一些情形中，使一效能特性最適 化需要複數次調諧調整（tuning adjustment)。 在此敘述用以原位監測CMP過程的系統以及方法。藉 由在過程中監測這種系統，對於設備以及方法皆能有較^ 的了解以及且被最適化。再者，這種揭露能促進CMp拋光 墊以及CMP拋光墊調整器未來的設計。原位監測也能對於 © 操作參數即時調整，因此該系統能夠微調或在其他系統之 加工時間部分最適化，又能保持在最佳化標準，如該CMp 拋光墊和CMP拋光墊修整器緩慢地磨損。 當然，需要瞭解的是以上所述之排列皆僅是在描述本 發明原則的應用，許多改變及不同的排列亦可以在不脫離 本發明之精神和範圍的情況下被於本領域具通常知識者所 設想出來，而申請範圍也涵蓋上述的改變和排列。因此’ 儘管本發明被特定及詳述地描述呈上述最實用和最佳實施 例’於本領域具通常知識者可在不偏離本發明的原則和觀 19 200929348 點的情況下做許多如尺寸、材料、形狀、樣式、功能、操 —_一 :..作_:方―法、：組_裝和，使用等變動。 -- 一 【圖式簡單說明】 無 【主要元件符號說明】 無The time delay between the parameters and the number of data is different, and it is applied from the instant (r) to the second step. Trimming has different effects on CMP transfer enamels from older to newer cMp polishing pads. Therefore, an observed performance (4) includes the degree of trimming, and if the trimming is too aggressive, it can be adjusted during trimming; Similarly, if the trimming is not aggressive enough, it can be adjusted to achieve an optimal finishing process. In a particular embodiment, the method for enhancing the CMP polishing process includes trimming a CMp polishing pad with a -CMP pad conditioner, and the ©-performance characteristic is observed through the translucent portion of the CMP polishing pad conditioner. An operational parameter can be adjusted in response to the observed performance characteristic to optimize the performance characteristic. In some cases, optimizing a performance characteristic requires a plurality of tuning adjustments. Systems and methods for monitoring CMP processes in situ are described herein. By monitoring such systems in the process, both equipment and methods can be better understood and optimized. Furthermore, this disclosure promotes the future design of CMp polishing pads and CMP pad conditioners. In-situ monitoring also allows for immediate adjustment of the © operating parameters, so the system can be fine-tuned or optimized for processing time in other systems while maintaining optimal standards such as the CMp polishing pad and CMP pad dresser slowly abrasion. Of course, it is to be understood that the above-described arrangements are merely illustrative of the application of the principles of the invention, and many variations and different arrangements can be employed in the field without departing from the spirit and scope of the invention. It is envisaged, and the scope of application also covers the above changes and arrangements. Thus, although the present invention has been described with particularity and specificity in the specific and preferred embodiments of the present invention, those of ordinary skill in the art can do many such as size, without departing from the principles of the invention and Material, shape, style, function, operation—_一:..作_:方法,:组_装和,使用等变化变化。 -- A [Simple diagram description] None [Main component symbol description] None
2020