TW200919883A - Opto-electronic semiconductor chip with quantum-well structure - Google Patents

Opto-electronic semiconductor chip with quantum-well structure Download PDF

Info

Publication number: TW200919883A
Authority: TW; Taiwan
Prior art keywords: quantum well; layer; well layer; component; layers
Prior art date: 2007-09-18

Application number

TW097135404A

Other languages

English (en)

Chinese (zh)

Inventor

Adrian Stefan Avramescu

Georg Bruederl

Christoph Eichler

Alfred Lell

Christian Rumbolz

Marc Schillgalies

Uwe Strauss

Original Assignee

Osram Opto Semiconductors Gmbh

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-09-18

Filing date

2008-09-16

Publication date

2009-05-01

2008-09-16 Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh

2009-05-01 Publication of TW200919883A publication Critical patent/TW200919883A/zh

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 171
230000005693 optoelectronics Effects 0.000 title claims abstract description 35
239000000463 material Substances 0.000 claims abstract description 103
230000004888 barrier function Effects 0.000 claims description 44
229910052738 indium Inorganic materials 0.000 claims description 33
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 31
230000005670 electromagnetic radiation Effects 0.000 claims description 29
230000005855 radiation Effects 0.000 claims description 29
229910002704 AlGaN Inorganic materials 0.000 claims description 4
235000012431 wafers Nutrition 0.000 description 39
239000002800 charge carrier Substances 0.000 description 14
239000002019 doping agent Substances 0.000 description 8
230000003595 spectral effect Effects 0.000 description 8
150000001875 compounds Chemical class 0.000 description 7
239000013078 crystal Substances 0.000 description 7
230000000694 effects Effects 0.000 description 7
239000000758 substrate Substances 0.000 description 7
239000000203 mixture Substances 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 4
239000004020 conductor Substances 0.000 description 4
238000009792 diffusion process Methods 0.000 description 4
229910052749 magnesium Inorganic materials 0.000 description 4
239000011777 magnesium Substances 0.000 description 4
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
230000007423 decrease Effects 0.000 description 3
229910052733 gallium Inorganic materials 0.000 description 3
229910052732 germanium Inorganic materials 0.000 description 3
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
239000000126 substance Substances 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
230000005611 electricity Effects 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
230000000737 periodic effect Effects 0.000 description 2
238000001228 spectrum Methods 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
229910003363 ZnMgO Inorganic materials 0.000 description 1
239000000654 additive Substances 0.000 description 1
230000000996 additive effect Effects 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
238000002425 crystallisation Methods 0.000 description 1
230000008025 crystallization Effects 0.000 description 1
230000002950 deficient Effects 0.000 description 1
230000008021 deposition Effects 0.000 description 1
239000004744 fabric Substances 0.000 description 1
238000010304 firing Methods 0.000 description 1
239000010437 gem Substances 0.000 description 1
229910001751 gemstone Inorganic materials 0.000 description 1
229910052736 halogen Inorganic materials 0.000 description 1
150000002367 halogens Chemical class 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
238000013139 quantization Methods 0.000 description 1
239000002096 quantum dot Substances 0.000 description 1
230000006798 recombination Effects 0.000 description 1
238000005215 recombination Methods 0.000 description 1
229910052707 ruthenium Inorganic materials 0.000 description 1
239000004576 sand Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Led Devices (AREA)
Semiconductor Lasers (AREA)

TW097135404A 2007-09-18 2008-09-16 Opto-electronic semiconductor chip with quantum-well structure TW200919883A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE102007044439.9A DE102007044439B4 (de)	2007-09-18	2007-09-18	Optoelektronischer Halbleiterchip mit Quantentopfstruktur

Publications (1)

Publication Number	Publication Date
TW200919883A true TW200919883A (en)	2009-05-01

Family

ID=40260641

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW097135404A TW200919883A (en)	2007-09-18	2008-09-16	Opto-electronic semiconductor chip with quantum-well structure

Country Status (3)

Country	Link
DE (1)	DE102007044439B4 (de)
TW (1)	TW200919883A (de)
WO (1)	WO2009036730A2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102315344A (zh) *	2010-07-09	2012-01-11	Lg伊诺特有限公司	发光器件、发光器件封装和包括其的发光***
CN102751393A (zh) *	2011-04-20	2012-10-24	新世纪光电股份有限公司	发光二极管结构
TWI584495B (zh) *	2015-06-18	2017-05-21	Osram Opto Semiconductors Gmbh	Optoelectronic semiconductor components

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102009015569B9 (de)	2009-03-30	2023-06-29	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Optoelektronischer Halbleiterchip
DE102009040438A1 (de) *	2009-07-24	2011-01-27	Osram Opto Semiconductors Gmbh	Optoelektronischer Halbleiterkörper mit einer Quantentopfstruktur
DE102012217681A1 (de) *	2012-09-27	2014-03-27	Osram Opto Semiconductors Gmbh	Optoelektronisches Bauteil und Verfahren zum Betreiben eines optoelektronischen Bauteils
DE102013104351B4 (de)	2013-04-29	2022-01-20	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips
CN105226145B (zh) *	2014-06-23	2019-05-31	中国科学院物理研究所	量子阱结构、发光二极管外延结构及发光二极管
DE102016101046A1 (de) *	2016-01-21	2017-07-27	Osram Opto Semiconductors Gmbh	Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102019100625A1 (de) *	2019-01-11	2020-07-16	Osram Opto Semiconductors Gmbh	Optoelektronisches halbleiterbauelement mit mehrfach-quantentopfstruktur und optoelektronische halbleitervorrichtung

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JP3226070B2 (ja) *	1993-10-04	2001-11-05	キヤノン株式会社	半導体光素子
GB2298735A (en) *	1995-03-08	1996-09-11	Sharp Kk	Semiconductor device having a miniband
FR2747485B1 (fr)	1996-04-15	1998-05-15	France Telecom	Structure a puits quantiques notamment pour composants actifs en onde guidee insensibles a la polarisation et de grande puissance de saturation et composant comprenant cette structure
US5719894A (en)	1996-09-25	1998-02-17	Picolight Incorporated	Extended wavelength strained layer lasers having nitrogen disposed therein
JP3854693B2 (ja) *	1996-09-30	2006-12-06	キヤノン株式会社	半導体レーザの製造方法
JP3433038B2 (ja) *	1997-02-24	2003-08-04	株式会社東芝	半導体発光装置
US6570179B1 (en) *	1998-01-14	2003-05-27	Mp Technologies, Llc	III-V semiconductors separate confinement superlattice optoelectronic devices
JPH11251685A (ja)	1998-03-05	1999-09-17	Toshiba Corp	半導体レーザ
FR2784515B1 (fr) *	1998-10-07	2000-11-10	Commissariat Energie Atomique	Laser a semiconducteur a spectre de gain accordable
DE19955747A1 (de)	1999-11-19	2001-05-23	Osram Opto Semiconductors Gmbh	Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6897484B2 (en) *	2002-09-20	2005-05-24	Sharp Kabushiki Kaisha	Nitride semiconductor light emitting element and manufacturing method thereof
US20040179566A1 (en) *	2003-03-11	2004-09-16	Aharon El-Bahar	Multi-color stacked semiconductor lasers
JP4412918B2 (ja)	2003-05-28	2010-02-10	シャープ株式会社	窒化物半導体発光素子及びその製造方法
WO2005020396A1 (ja)	2003-08-26	2005-03-03	Sony Corporation	ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法
US7138648B2 (en)	2003-12-17	2006-11-21	Palo Alto Research Center Incorporated	Ultraviolet group III-nitride-based quantum well laser diodes
KR100649749B1 (ko) *	2005-10-25	2006-11-27	삼성전기주식회사	질화물 반도체 발광 소자

2007
- 2007-09-18 DE DE102007044439.9A patent/DE102007044439B4/de active Active
2008
- 2008-08-29 WO PCT/DE2008/001445 patent/WO2009036730A2/de active Application Filing
- 2008-09-16 TW TW097135404A patent/TW200919883A/zh unknown

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102315344A (zh) *	2010-07-09	2012-01-11	Lg伊诺特有限公司	发光器件、发光器件封装和包括其的发光***
CN102315344B (zh) *	2010-07-09	2015-11-25	Lg伊诺特有限公司	发光器件、发光器件封装和包括其的发光***
CN102751393A (zh) *	2011-04-20	2012-10-24	新世纪光电股份有限公司	发光二极管结构
TWI584495B (zh) *	2015-06-18	2017-05-21	Osram Opto Semiconductors Gmbh	Optoelectronic semiconductor components

Also Published As

Publication number	Publication date
WO2009036730A3 (de)	2009-08-06
DE102007044439B4 (de)	2022-03-24
WO2009036730A2 (de)	2009-03-26
DE102007044439A1 (de)	2009-03-19

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