200919583 九、發明說明： 【發明所屬之技術領域】 本發明為有關於-魏化雜透明導料贿程及其設備， 特別是指以ΑΖ0為材料之透明導電膜。以共鍛方法，將兩乾材同 時在不_轟擊面積下枚混合_，且能在室溫下製作出高透 光性及導電性佳的成品者。 【先前技術】 隨著光電產業的發展，不斷有新材料被發展出來，對於各類 新產品之要求除了輕、薄、短、小、高效率及美觀外，符合其光、 電、磁與熱之功能性需求外，若能具備高強度、高勒性、财磨耗、 耐高溫及防腐等特性，鐶然能夠成為更具有競爭優勢之產品。 因此將產品表面調質處理之高性能锻膜技術便可達成此一要 軏其中透明導電膜即是近年來電子、電力、光電領域之資訊、 通Λ、多雜及其他微機電產業下所制的熱門材料，而所謂透 明導電膜即是-種吸收紫外光及紅外光線、而可見光穿透的材 料，傳統上多使用ΙΤ〇(錮錫氧化物薄膜Indium如_e)等材 料組成的透明電膜，其兼具透明與導電兩種特性，從液晶顯示器 (LCD)、太陽電池㈤恤cell) '觸控面始―卿⑴、發光 二極體(LED)到節能玻璃等’這些都是透明導電膜發揮的舞台。而 以ΙΤ0材料中的錮薇藏量低且取得不易，隨著用量劇增，銦價格 居高不下，成本高昂，所以-直有新材料想取代它。廳更是—例， 200919583 在適當條件下可製作出與ITG她美之特性且價格低廉，極具競 爭優勢。 目前以ΑΖ0(Ζη0摻A1)這樣的材料為透明導電膜，其導電特性 良好且透光率在概以上，—般製作AZQ都以化學方法、如—敗1 方法(溶職膠法）賴鍍方法，以這些方法製作剔，都是在低真 空度（1G—2〜1G—3torr)環境下或是大氣中製作，且成品必須經過 300 C〜5G(TC退火做補氧與再結晶的處理，才會成為透明且帶有 導電性的賴。但化學方法、s。卜gel方法或濺鍍方法因為製作氣 氛環境(在大氣巾或1(Γ2〜l()-3tQiT低真空度）的限制，因此無法提 供高品質的成品。此外，傳統濺鍍方式要做共鍍調變兩種鍍材比 例’必須要兩支濺鍍搶’製鍍成分較不穩定，而且腔體中溫度很 鬲。至於化學方法、s〇i-gei方法與濺鍍方法當遇到需要在低溫製 程的基板，如：PET (聚對苯二曱酸乙二醇酯p〇lyethylene terephthalate)、PMMA(壓克力 p〇iyMethyl MethAcrylate)、pc(聚 碳酸酯Poly Carbonate)等，這些基板只能承受的工作溫度在 120°C〜200°C，超過此工作溫度會造成基板捲曲變形，由於基板 不耐高溫無法作退火處理，因而無法達到高透光導電性佳的AZ〇 薄膜。 【發明内容】 本發明主要目的，即在於提供一種氧化鋅鋁透明導電薄膜設 備，主要係可以在至溫下鑛製出ΑΖ0薄膜。其中真空藏鑛腔體内 200919583 主要設有離子麟搶、姆_基座、被基朗定之城及 品。該難品於真空濺__進行離子束雜，並且可 溫高真空度下的條件難’以—德子_練同時 多耩姑斜。 藉由上述設備鍍製綱薄膜，可以選騎兩種單一材料乾材 同時共鑛、或混合兩鋪料之單—姆難、或單—材料乾材與 混合材材频。置放姆的基座能調錄材位置，鑛製細 薄膜時就能控制兩赠被轟擊的面積來決定兩種材混合比例 =能_實_賴成分比例，可以很準確有效地調變az〇 薄膜成分的比例，製作出高透光性及導電性佳的成品。本發 =:。。〜纖高溫細程或， 火處理製程。 【實施方式】 一為讓本發明上述和其他目的、特徵及優點能更明顯易懂，以 下就特舉較佳實施例，並配合所關式，作詳細說明如下· 請參閱第-圖所示’本發明氧化_透明導電薄料備主要 係可以在室溫下鍍製出薄臈。其中真空濺鑛腔體！内主要吸 有離子濺鍍搶2、_材固定基座4 _之妹3及—，該 鍍製品5以離子束贿之真空濺體丨内進行賤鍍，並且可以 在室溫高真^度下祕件鍍製而成（高真空條件^、j π _‘W)，且以一支離子濺繼同時鍍製—樣或多樣機。 200919583200919583 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a Wei Wei-heavy transparent guide bribe and its equipment, and in particular to a transparent conductive film made of ΑΖ0. In the co-forging method, the two dry materials are mixed under the non-bombardment area at the same time, and the finished product with high transparency and conductivity can be produced at room temperature. [Prior Art] With the development of the optoelectronic industry, new materials have been developed, and the requirements for various new products are light, electric, magnetic and thermal, in addition to being light, thin, short, small, high-efficiency and beautiful. In addition to the functional requirements, if it has the characteristics of high strength, high gas, energy consumption, high temperature resistance and corrosion resistance, it can become a more competitive product. Therefore, the high-performance forging film technology that tempers the surface of the product can achieve this. Among them, the transparent conductive film is the information in the fields of electronics, electric power and optoelectronics in recent years, all kinds of miscellaneous and other micro-electromechanical industries. The popular material, the so-called transparent conductive film is a kind of material that absorbs ultraviolet light and infrared light, and visible light penetrates. Traditionally, transparent light composed of materials such as yttrium oxide film (Indium such as _e) is often used. Membrane, which has both transparent and conductive properties, from liquid crystal display (LCD), solar cell (five) cell) 'touch surface start-qing (1), light-emitting diode (LED) to energy-saving glass, etc. The stage where the conductive film plays. However, the amount of roses in the ΙΤ0 material is low and difficult to obtain. With the sharp increase in the amount of indium, the price of indium is high and the cost is high, so there is a new material to replace it. In the hall, for example, 200919583 can produce the characteristics of ITG with its low price and competitive advantage under appropriate conditions. At present, a material such as ΑΖ0 (Ζη0 doped with A1) is a transparent conductive film, and its conductive property is good and the light transmittance is more than or equal. Generally, AZQ is produced by a chemical method such as a method of dissolving 1 The method is to make the tick in these ways, all in the low vacuum (1G-2~1G-3torr) environment or in the atmosphere, and the finished product must pass 300 C~5G (TC annealing for oxygen and recrystallization) It will become transparent and conductive. But the chemical method, s. gel method or sputtering method is limited by the atmosphere (in the air towel or 1 (Γ2~l()-3tQiT low vacuum)) Therefore, it is impossible to provide a high-quality finished product. In addition, the conventional sputtering method has to be co-plated and modulated. The ratio of the two plating materials is required to be two sputterings. The plating composition is unstable, and the temperature in the cavity is very low. As for chemical methods, s〇i-gei methods and sputtering methods, when encountering substrates that require low temperature processes, such as PET (polyethylene terephthalate), PMMA (acrylic p 〇iyMethyl MethAcrylate), pc (polycarbonate Poly Carbonate), etc. The substrate can only withstand the operating temperature of 120 ° C ~ 200 ° C, beyond this working temperature will cause the substrate to curl deformation, because the substrate is not resistant to high temperature can not be annealed, so it can not achieve AZ film with high light transmission and good conductivity. SUMMARY OF THE INVENTION The main object of the present invention is to provide a zinc oxide aluminum transparent conductive film device, which can mainly produce a ΑΖ0 film at a temperature to a temperature. In the vacuum reservoir, 200919583 is mainly provided with ion lining. _ pedestal, the city of Kilanding and the product. The difficult product in the vacuum splash __ ion beam, and the conditions under the high temperature and vacuum can be difficult to 'de German _ practice at the same time more than a slant. The above-mentioned equipment is coated with a thin film, which can be used to ride two kinds of single materials, dry materials, or a mixture of two materials, or a single material dry material and mixed material frequency. Adjusting the position of the recording material, when the fine film is made of minerals, the area of the two gifts can be controlled to determine the mixing ratio of the two materials. The ratio of the two materials can be accurately and effectively adjusted to the proportion of the az〇 film composition. High light transmission A good electrical conductivity product. The present invention is a high-temperature process or a fire treatment process. [Embodiment] The above and other objects, features and advantages of the present invention will become more apparent and obvious. The preferred embodiment, together with the closed type, is described in detail below. Please refer to the figure - the oxidation of the present invention. The transparent conductive thin material is mainly prepared by plating a thin crucible at room temperature. The cavity is mainly immersed in ion sputtering, 2, _ material fixed base 4 _ sister 3 and -, the plating product 5 is immersed in the vacuum splatter of the ion beam, and can be high at room temperature The secret piece is plated (high vacuum condition ^, j π _'W), and is coated with a pair of ions and simultaneously coated or sampled. 200919583
如第三圖、第五第七_紅減3，該崎3為兩錄 材共錄’或單—树兩種材概製，抑或是單-材料崎3a結合 有混合材料練3b鄕，此時每—練材3料單—材料乾材H 也能是混合材躲材3b。_雜賴製的結合 3a 4加以固定。 U疋基座 氧化鋅紹透明導電薄膜製程之鍍製方法為： 步驟-、蚊料束，解料舰搶2卫作_，使其成 ^為帶有能量的離子光束21以撞擊縛3，可以藉由離子光束21 的能量調變800V〜2000V與離子光束21電流密度的多寡 ImA/cm2〜20raA/cm2及離子光束21的撞擊乾材3的面積的大小。乾 材3的面積的大小範圍係小至離子滅鑛槍2端面面積大小 單一輕材3面積大小； 步驟二、決定㈣方式，如第五圖至第七圖，卿對兩種單 材料乾材同時共鍍、或混合兩種材料之單—材料乾材鑛製、或 、單-材·材與混合材料姆共鑛、或單—材料之單^料乾材 鑛製’來鑛製ΑΖ0薄膜。若以金屬Zn與A1兩⑽才如例，則採用 雙把共鍍。/亦可用氧化物ZnO乾材與A1兩乾材共鍍方式； • 步驟二、決定真空濺鍍腔體丨中通入之氣體與其流量，通入 靶材製鍵所需的氣體(例如：氧氣），控制製鑛所需的流量，並穩 定製鍍時的真空度於1χ1〇4〜5χ1(γ4 tQrr制； 〜 步驟四、混合成分比例，控制離子束21撞擊把材3的面積的 200919583 大小，用調整靶材固定基座4高低位置，能移動靶材3上下位置 與離子束21轟擊位置，如第三圖及第四圖所示；能夠調整至離子 : 束轟擊上面單一靶材，或調整至離子束轟擊下面單一靶材，藉以 : 控制兩種靶材3材料混合成分比例就能鍍製出ΑΖ0薄膜。因此， ΑΖ0的成分就能以兩乾材的轟擊面積或乾材基座上升高度來決定 混合比例，進一步分析出實際成分比例之後，就能準確有效地調 變所需的成分； 步驟五、室溫下鍍製出鍍製品5，離子束21撞擊靶材3所濺 擊產生的祀材原子沉積於鍍製品5形成薄膜，改變製程中離子束 21撞擊靶材3的比例，控制離子束21能量輸出，能鍍製具有高均 勻性、高緻密性之品質優良厚度約50nm〜1〇〇〇nm之薄膜，並具有 高透光性及導電性佳的鍍製品5。 【圖式簡單說明】 第一圖所示係本發明以高真空狀態下製作樣品示意圖。 第二圖所示係本發明靶材固定狀態示意圖。 第三圖所雜本發明就兩狀的轟擊面積_將綺基座上升高 度之調整狀態示意圖。 第四圖所示係本發明兩树的轟擊面積比例調整狀態示意圖。 ，第五圖所示係本發明所使用之單一材料乾材及混合材料: 意圖。 不 第六圖所示係本發明以兩種不同單—材料之妹結合之示意圖。 200919583 第七圖所示係本發明以單一材料乾材與混合材料把材結合之示意 圖。 : 【主要元件符號說明】 1 .....................真空濺鍍腔體 2 .....................離子濺鍍搶 21...................••離子束 3 .....................靶材 3a.....................單一材料靶材 3b.....................混合材料把材 把材固定基座 鍍製品 10As shown in the third figure, the fifth and seventh _ red minus 3, the saki 3 is a two-recorded material, or a single-tree structure, or a single-material saki 3a combined with a mixed material, 3b, Whenever - the material material 3 material list - material dry material H can also be mixed material hiding material 3b. _ The combination of the hybrid system 3a 4 is fixed. The plating method of the U 疋 氧化 氧化 绍 透明 透明 transparent conductive film process is: Step -, the mosquito bundle, the disintegration ship grabs 2 Guards _, making it into an ion beam 21 with energy to hit the binding 3, The energy of the ion beam 21 can be adjusted by the amount of the current density of 800V to 2000V and the current density of the ion beam 21, ImA/cm2 to 20raA/cm2, and the area of the ion beam 21 striking the dry material 3. The size of the area of the dry material 3 is as small as the area of the end face of the ion eliminator 2, the size of a single light material, and the size of the area. Step 2: Determine the method of (4), as shown in the fifth to seventh figures, At the same time, a total of two materials - a dry material or a mineral material, or a single material / material and a mixed material, or a single material - a dry material of the material . If metal Zn and A1 (10) are used as an example, double-plated co-plating is used. / Can also use oxide ZnO dry material and A1 two dry materials co-plating method; • Step 2, determine the gas and its flow through the vacuum sputtering chamber ,, the gas required to pass the target key (for example: oxygen ), control the flow required for ore production, and stabilize the vacuum degree during plating at 1χ1〇4~5χ1 (γ4 tQrr system; ~ Step 4, mixing composition ratio, control ion beam 21 hits the area of the material 3 of 200919583 size Fixing the height and position of the base 4 by adjusting the target, and moving the upper and lower positions of the target 3 and the bombarding position of the ion beam 21, as shown in the third and fourth figures; capable of adjusting to the ion: beam bombarding the single target above, or Adjusted to the single target under the ion beam bombardment, by: controlling the ratio of the mixed components of the two target materials 3 can be used to plate the ΑΖ0 film. Therefore, the composition of ΑΖ0 can rise with the bombardment area of two dry materials or the dry material pedestal. The height is used to determine the mixing ratio, and after further analysis of the actual composition ratio, the required components can be accurately and effectively modulated; Step 5. The plated product 5 is plated at room temperature, and the ion beam 21 strikes the target 3 to be splashed. Coffin atom Depositing on the plated product 5 to form a film, changing the ratio of the ion beam 21 striking the target 3 in the process, controlling the energy output of the ion beam 21, and plating the quality with high uniformity and high compactness. The thickness is about 50 nm~1〇〇〇 The film of nm has a highly transparent and highly conductive plated product 5. [Simplified description of the drawings] The first figure shows a schematic diagram of the sample produced by the present invention under high vacuum. The second figure shows the invention. Schematic diagram of the fixed state of the target. The third figure is a schematic diagram of the adjustment state of the two-shaped bombardment area _ the height of the susceptor hoisting height. The fourth figure shows the state of the bombardment area ratio adjustment of the two trees of the present invention. The fifth figure shows the single material dry material and mixed material used in the present invention: Intent. The sixth figure shows a schematic diagram of the present invention combining two different single-material sisters. 200919583 The invention combines a single material dry material and a mixed material material. : [Main component symbol description] 1 .....................vacuum sputtering cavity 2 .....................Ion Splashing 21. .................••Ion beam 3 .....................target 3a.... .................single material target 3b.....................mixing material and fixing material Base plated product 10