TW200912521A

TW200912521A - Method of acquiring photomask information, method of displaying photomask quality, method of supporting manufacture of an electronic device, method of manufacturing an electronic device, and photomask product

Info

Publication number: TW200912521A
Application number: TW097126619A
Authority: TW
Inventors: Koichiro Yoshida; Kazuhisa Imura
Original assignee: Hoya Corp
Priority date: 2007-07-23
Filing date: 2008-07-14
Publication date: 2009-03-16
Also published as: KR20090010909A; CN101373324A; TWI431408B; KR101065564B1; JP5460981B2; CN101373324B; JP2009048185A

Abstract

By using an exposure condition approximate to a predetermined exposure condition, a photomask is subjected to exposure. Then, a transmitted light pattern of the photomask is acquired by image pickup means. Based on the transmitted light pattern thus acquired, transmitted light pattern data are obtained.

Description

200912521 * 九、發明說明：【發明所屬之技術領域】本發明係關於取得有關電子裝置製造所使用的光罩的資訊的光罩資訊之取得方法、顯示光罩品質的光罩之品質顯示方法、支援電子裝置製造的電子裝置之製造支援方法、電子裝置之製造方法及光罩製品。又，平面面板顯示器（FPD)裝置所代表的顯示裝置作為 ( 電子裝置，尤其是液晶顯示裝置例如薄膜電晶體（TFT)、彩色濾光器（CF)等的電子裝置的製造中，有用的光罩資料之取得方法、顯示光罩品質的光罩之品質顯示方法、支援這些電子裝置製造的電子裝置之製造支援方法及電子裴置之製造方法。【先前技術】現在，LCD (液晶顯示裝置）的領域中，具有薄膜電晶體 υ (Thin Film Transistor :以下稱作TFT)的液晶顯示裝置 (Thin Film Transistor Liquid Crystal Display:以下稱作TFT-LCD)與CRT(陰極射線管）相較，由於有容易薄型化且消耗電力低的優點，於是現在急速發展商品化。 TFT-LCD具有的概略構造，包括對應各畫素排列紅、綠、及藍的畫素圖案的彩色濾光器，在液晶層介於其間的下方與矩陣狀排列的各晝素中排列TFT的構造的TFT基板互相重豎。TFT-LCD的製造步驟數多，光是TFT基板就使用5〜6枚的光罩來製造。 2130-9836-PF;Ahddub 5 200912521 上述的情況下，提供使用4枚的光罩來進行TFT基板製造的方法。上述方法係，使用具有遮光部、透光部、及半透光部（灰階部）的光罩（以下稱作灰階光罩），藉此減低使用的遮光罩枚數。在此，所謂半透光部，係指使用遮光罩在被轉印體上轉印圖案之際，使透射的曝光光的透射量減低既定量，控制被轉印體上的光阻膜顯像後的殘膜量在既定的範圍内的部分，而具有上述半透光部以及遮光部'透光部的光罩稱作灰階光罩。使用上述灰階光罩的TFT基板的製造步驟如以下範例所不。玻璃基板上，形成閘極電極用金屬膜，藉由使用光罩的微影成像製程形成閘極電極。之後，形成閘極絕緣膜、第1半導體媒（a-Si:非晶石夕）、第2半導體膜（N + a_Si)、源極汲極用金屬膜、及正型光阻膜。其次，使用具有遮光部、透光部及半透光部的灰階光罩，曝光正型光阻膜，並顯像，藉此形成第1光阻圖案，以覆蓋TFT通道部與源極/ 汲極形成區域及資料線形成區域，且使通道部形成區域比源極/沒極形成區域薄。八第1光阻圖案作為遮光罩，姓刻源極及極用金屬膜及第2、f 1半導體膜。其次，通道部形成區域的薄光阻膜以氧產生的灰化除去，形成第2光阻圖案。然後，第2光阻圖案作為遮光罩，㈣源極/汲極用金屬膜，形成源極/汲極’其次蝕刻第2半導體膜，最後剝離殘存的第2 光阻圖案。 2l3〇-9836'PF;Ahddub 6 200912521 上述電子裝置的製造中使用的光罩的製造中，藉由評已凡成的光罩’評估圖案形狀、半透光部中形成的膜材 ;、、或膜厚。根據此評估結果，進行圖案形狀等的修正、變更，以製造下次的光罩，藉此達到合適的圖案形狀、膜材料及膜厚。 $ 專利文件1(特開2004-309327公報）中記載，評估具 $微’、、田圖案的灰階光罩之際，以使用既定光源的顯微鏡取 p =罩的透射光料’以影像處理軟體對此透射光影像施行暈化處理，得到曝光機的解析度相當的透射影像。此技術係根據上述暈化的透射光影像，預測圖案轉印至光阻膜時的光罩的透射率。又，專利文件2(特開2003-307500公報）中記載的技術係掃描光罩的半透光部，求得透射率的臨界值，再根據此臨界值評估。〇【發明内容】使用上述光罩的電子裝置的製造中，使用具有例如i 東g線的波長範圍的曝光機，對於被轉印體上設置的光阻膜，適用通過光罩的曝光步驟。不過，以上述曝光所得到的在被轉印體上的光阻圖案形狀不一定固定。例如，每曝光機的波長特性不同，又，由於曝光機的照明也經時變化，即使使用同-的光罩，透射光罩的光強度的圖案也不疋相同。特別是，上述光罩，在具有上述半透光部的灰階光罩的情況下，具有以下的問題。 2130-9836-PF;Ahddub 7 200912521 首先，使用光罩實際曝光之際，由於曝光機的光譜特性，半透光部的透射率不同。這是因為使用既定材料Z半透光性的膜時，上述半透光性的膜的透射率具有波長依存性。又，依據曝光機的光學系統以及灰階光罩上形成的圖案的形狀，由於半透光部中產生的折射影響程度不同，實際的透射率中產生差異。由於這些主因，實際透過半透光200912521 * IX. EMBODIMENT OF THE INVENTION: TECHNICAL FIELD The present invention relates to a method for obtaining mask information for obtaining information on a mask used for manufacturing an electronic device, and a method for displaying a quality of a mask for displaying a mask quality, A manufacturing support method for supporting an electronic device manufactured by an electronic device, a method of manufacturing the electronic device, and a photomask product. Further, a display device represented by a flat panel display (FPD) device is useful as an electronic device (in particular, a liquid crystal display device such as a thin film transistor (TFT), a color filter (CF), or the like. A method for obtaining a mask data, a method for displaying a quality of a mask for displaying a mask quality, a method for manufacturing an electronic device supporting the manufacture of such an electronic device, and a method for manufacturing an electronic device. [Prior Art] Now, an LCD (Liquid Crystal Display Device) In the field of thin film transistor (hereinafter referred to as TFT), a Thin Film Transistor Liquid Crystal Display (hereinafter referred to as TFT-LCD) is compared with a CRT (Cathode Ray Tube). It is easy to be thinner and consumes less power, so it is rapidly becoming commercialized. TFT-LCD has a schematic structure including a color filter for arranging pixel patterns of red, green, and blue for each pixel, in the liquid crystal layer. The TFT substrates having the structure in which the TFTs are arranged in the matrix and the respective elements in the matrix are vertically erected. The number of manufacturing steps of the TFT-LCD is large. The TFT substrate is manufactured using 5 to 6 masks. 2130-9836-PF; Ahddub 5 200912521 In the above case, a method of manufacturing a TFT substrate using four masks is provided. a light-shielding portion, a light-transmitting portion, and a photomask (hereinafter referred to as a gray scale mask) of the semi-transmissive portion (gray-scale portion), thereby reducing the number of used hoods. Here, the semi-transmissive portion is When the pattern is transferred onto the transfer target by the hood, the amount of transmission of the transmitted exposure light is reduced by a predetermined amount, and the amount of residual film after the development of the photoresist film on the transfer target is controlled within a predetermined range. The photomask having the semi-transmissive portion and the light-shielding portion 'light-transmitting portion is called a gray-scale photomask. The manufacturing steps of the TFT substrate using the above-described gray-scale photomask are as follows. The gate electrode is formed by a lithography process using a photomask, and a gate electrode is formed, and then a gate insulating film, a first semiconductor dielectric (a-Si: amorphous silicon oxide), and a second semiconductor film are formed ( N + a_Si), a metal film for source drain, and a positive photoresist film. And using a gray scale mask having a light shielding portion, a light transmitting portion, and a semi-light transmitting portion, exposing the positive resist film and developing the image, thereby forming a first photoresist pattern to cover the TFT channel portion and the source/pole a pole formation region and a data line formation region, and the channel portion formation region is thinner than the source/nopole formation region. The eighth first photoresist pattern is used as a hood, the source and the end metal film are used, and the second, f 1 Next, the thin photoresist film in the channel portion forming region is removed by ashing by oxygen to form a second photoresist pattern. Then, the second photoresist pattern serves as a light shield, and (4) a source/drain metal film forms a source. The pole/drain electrode etches the second semiconductor film, and finally removes the remaining second photoresist pattern. 2l3〇-9836'PF; Ahddub 6 200912521 In the manufacture of the photomask used in the manufacture of the above electronic device, the pattern shape and the film formed in the semi-transmissive portion are evaluated by evaluating the mask of the conventional device; Or film thickness. Based on the result of the evaluation, the shape and the like are corrected and changed to produce the next mask, thereby achieving an appropriate pattern shape, film material, and film thickness. In the case of evaluating a gray scale mask having a micro- and a pattern, a micro-photograph of a p = cover using a microscope using a predetermined light source is described in the patent document 1 (JP-A-2004-309327). The soft body is subjected to a hazy treatment on the transmitted light image to obtain a transmission image having a resolution equivalent to that of the exposure machine. This technique predicts the transmittance of the mask when the pattern is transferred to the photoresist film based on the above-described hazy transmitted light image. Further, the technique described in Patent Document 2 (JP-A-2003-307500) scans the semi-transmissive portion of the reticle to obtain a critical value of the transmittance, and evaluates it based on the critical value. 〇 SUMMARY OF THE INVENTION In the manufacture of an electronic device using the above-described photomask, an exposure machine having a wavelength range of, for example, an i-g line is used, and an exposure step by a photomask is applied to the photoresist film provided on the transfer target. However, the shape of the resist pattern on the object to be transferred obtained by the above exposure is not necessarily fixed. For example, the wavelength characteristics of each exposure machine are different, and since the illumination of the exposure machine also changes over time, even if the same mask is used, the pattern of the light intensity of the transmission mask is not the same. In particular, the photomask has the following problems in the case of the gray scale mask having the semi-transmissive portion. 2130-9836-PF; Ahddub 7 200912521 First, when the actual exposure of the photomask is used, the transmittance of the semi-transmissive portion is different due to the spectral characteristics of the exposure machine. This is because when a film having a semi-transparent property of a predetermined material Z is used, the transmittance of the semi-translucent film has a wavelength dependency. Further, depending on the optical system of the exposure machine and the shape of the pattern formed on the gray scale mask, since the degree of influence of the refraction generated in the semi-transmissive portion is different, a difference occurs in the actual transmittance. Due to these main causes, the actual transmission through the semi-transmission

部的曝光光的透射率（以下稱作實效透射率）變動。特別是，具有通道部微細化傾向的TFT的製造中，本發明者發現不能忽視上述實效透射率的變動。在以下說明具有形成以既定量減低曝光光再透射的半透光性的膜的方法，作為灰階光罩的灰階部的形成方法。所謂半透光性的膜，係透明基板的曝光光透射率為1〇〇%時，具有例如 2 0 %至6 0 %的透射率的膜。灰階光罩中，灰階部中透射光強度為Ig，足夠廣的白 (透光）區域中的透射光強度為Iw，足夠廣的黑（遮光）區域中的透射光強度為lb時，以下公式所示的值可以作為灰階部的透射率。The transmittance of the exposure light (hereinafter referred to as the effective transmittance) varies. In particular, in the manufacture of a TFT having a tendency to refine the channel portion, the inventors have found that the fluctuation of the above-described effective transmittance cannot be ignored. In the following, a method of forming a film having a semi-translucent property for reducing the re-transmission of exposure light quantitatively is described as a method of forming a gray-scale portion of a gray scale mask. The semi-translucent film is a film having a transmittance of, for example, 20% to 60% when the exposure light transmittance of the transparent substrate is 1%. In the gray scale mask, the transmitted light intensity in the gray scale portion is Ig, the transmitted light intensity in the sufficiently wide white (light transmitting) region is Iw, and the transmitted light intensity in the sufficiently wide black (light blocking) region is lb. The value shown by the following formula can be used as the transmittance of the gray scale portion.

TransniittanceC透射率）= {Ig/(!w— 在此，可以考慮根據上述半透光性的臈固有的透射率 (不論圖案形狀，以膜及曝光光決定的透射率）決定灰階部中的透射光強度Ige上述透射率的管理’灰階部的面積對曝光機的解析度夠大，又曝光光的光譜特性固定時，由於取得固定值的透射率，特別不產生問題。不過，灰階部的面積微小時，不能忽視折射的影響，半透光部的圖案形狀 2130-9836-PF;Ahddub 8 200912521 成為—部分未解析。因此，由於鄰接灰階部的遮光部、或透光部的影響，實際曝光時，透射率與半透光膜的固有透射率成為相異的值。換言之，會有半透光膜固有的透射率不能用作實效值的情況。例如，薄膜電晶體製造用的灰階光罩中，相當通道部的區域作為灰階部，使用的灰階光罩’柄當於以夾住灰階部的形狀鄰接的源極及汲極的區域以遮光部構成。上述灰階光罩中，隨著通道部的面積（寬度）變小，與鄰接的遮光部間的界限，在實際的曝光條#τ暈化（不解析），通道部的曝光光的透射率比半透光膜的固有透射率低。特別是，液晶顯示裝置製造用等的大型遮光罩用曝光機，不同於半導裝置製造用的步驟’由於解析度低，上述問題顯著。又’上述大型遮光罩用曝光機中，為了麵根據解析度的光量’光源波長具有長達i線〜g線的寬廣波長區。曝光機的光譜特性不同的話，由於解析度隨著不同，上述變動要素變得更大。最近㈣㈣晶n(TFT)中，提出藉由使通道部的寬度比習知小’以增加液晶的動作速度，或藉由縮小通道部；大小’以增加液晶的亮度等的技術。製造上述薄臈電晶體的灰階光罩中’半透光膜本身的透射率之外，形成灰階部時’可以說有必要考慮實際的曝光條件下所定義的「實效透射率」。又作為灰p白β，形成具有解析界限以下尺寸的微細的遮光圖案的灰階光罩中’根據曝光機的光譜特性，由於 2130-9836-PF;Ahddub 200912521 微細圖案的解析程度不同，發現還是必須考慮實際的曝光條件下的「實效透射率」。電子裝置的製造中，必須得到具有既定尺寸的線寬，Transniittance C transmittance) = {Ig / (! w - Here, it is conceivable to determine the transmittance in the gray scale according to the transmissivity inherent to the semi-transparent enthalpy (regardless of the pattern shape, the transmittance determined by the film and the exposure light) Transmitted light intensity Ige Management of the above transmittance "The area of the gray scale portion is sufficiently large for the resolution of the exposure machine, and when the spectral characteristics of the exposure light are fixed, the transmittance of the fixed value is obtained, and particularly no problem occurs. When the area of the part is small, the influence of the refraction cannot be ignored, and the pattern shape of the semi-transmissive portion is 2130-9836-PF; Ahddub 8 200912521 becomes—partially unresolved. Therefore, due to the light-shielding portion adjacent to the gray-scale portion or the light-transmitting portion In the actual exposure, the transmittance and the intrinsic transmittance of the semi-transmissive film are different. In other words, there is a case where the transmittance of the semi-transmissive film cannot be used as an effective value. For example, for the manufacture of a thin film transistor In the gray scale mask, the area corresponding to the channel portion is used as the gray scale portion, and the gray scale mask used is formed as a light shielding portion in the region of the source and the drain adjacent to the shape in which the gray scale portion is sandwiched. In the gray scale mask, as the area (width) of the channel portion becomes smaller, and the boundary between the adjacent light-shielding portions is dimmed (not resolved) in the actual exposure bar #τ, the transmittance ratio of the exposure light of the channel portion is smaller. The semi-transmissive film has a low intrinsic transmittance. In particular, an exposure machine for a large hood for manufacturing a liquid crystal display device is different from the step for manufacturing a semiconductor device, because the resolution is low, and the above problem is remarkable. In the exposure machine for a hood, the surface of the illuminator has a wide wavelength range of i-line to g-line in accordance with the amount of light of the resolution. When the spectral characteristics of the exposure machine are different, the variation factor becomes different depending on the resolution. More recently, in the (four) (four) crystal n (TFT), a technique of increasing the width of the liquid crystal by increasing the width of the channel portion by increasing the width of the channel portion or increasing the brightness of the liquid crystal by narrowing the channel portion or the size is proposed. In the gray scale mask of the above-mentioned thin germanium transistor, in addition to the transmittance of the semi-transmissive film itself, when the gray scale portion is formed, it can be said that it is necessary to consider the "effective transmission" defined under actual exposure conditions. In addition, as a gray-white β, a gray-scale mask having a fine light-shielding pattern having a size smaller than the resolution limit is formed. 'According to the spectral characteristics of the exposure machine, the degree of resolution of the fine pattern of 2130-9836-PF; Ahddub 200912521 is different. It has been found that it is necessary to consider the "effective transmittance" under actual exposure conditions. In the manufacture of electronic devices, it is necessary to obtain a line width having a predetermined size.

且其光阻殘膜值在既定範圍的光阻圖案，可以實現上述光阻圖案的光罩是必須的。於是，按照此規格，光罩的製造中’有利於製造既定的線寬、且具有提供既定的光阻殘膜值的實效透射率的半透光部的光罩。在此，光罩可以是以下2類型中的任一型。第丨型係在曝光條件下，根據具有解析界限以下的線寬的圖案，調整曝光光的透射量的微細圖案型的灰階光罩（稱作微細圖案型灰階光罩）。第2型係使用透射曝光光-㈣的半彡光膜調整透射4#半灰階型的灰階光罩（稱作半透光膜型灰階光罩）。 …本發明者發現，實際上電子裝置的製造中使用的曝光條件（特定的曝光波長分佈、特定的光學條件）中，特定的光罩圖案’特別是半透光膜部分的線寬等，且有將有窄面積 '細部位處（例如，寬度未滿3微米的圖荦部位） ^的結果’評估此光罩，或判斷使用此光罩製造電子裝是有條件（総輯的顯像條件、條件）本發明係鑑於上述實際情況所提供的曝光機的光學系統產生的由仵到反映土幻王因、光源的弁雄顯像特性等的各主因的光罩性能、曰、光阻的要的電子裝置的光罩資訊/提供可以製造所〜·方法、π 法、電子裝置之製造支援方 °°質顯示方去、電子農置之製造方法及光 2130-983β-PF/Ahddub 200912521 罩製品為目的。又，要製造電子裝置的光罩，在使用曝光機進行光罩的曝光之際，為了在被轉印體上的光阻膜形成所要的光阻圖案，上述光罩在實際使用的曝光機的曝光條件下發揮，必須知道光罩的特性。上述實際應用的曝光條件下，發揮的光罩特)生作為資訊，如果提供與作為製品的光罩間的關聯，在電子裝置的製造上是極有用的。根據上述的觀點，本發明=們有以下的發現點。遮光罩使用者，如果有上述的光罩貝λ，可以掌握例如使用本身的曝光機是否可以穩疋也製&所要的光阻圖案，或是，使用本身的曝光機曝光之際如何控制變動要素，是否容易得到所要的光阻圖案，又’預先掌握曝光容易產生的不良，檢討預先設定的曝光Further, a photoresist pattern having a photoresist residual film value within a predetermined range is necessary for realizing the photomask of the above resist pattern. Thus, according to this specification, in the manufacture of a photomask, it is advantageous to manufacture a mask having a predetermined line width and a semi-transmissive portion which provides a practical transmittance of a predetermined photoresist residual film value. Here, the photomask may be of any of the following two types. The third type is a fine pattern type gray scale mask (referred to as a fine pattern type gray scale mask) which adjusts the transmission amount of exposure light according to a pattern having a line width equal to or lower than the analysis limit under exposure conditions. Type 2 A translucent exposure light-(4) semi-thin film is used to adjust a transmissive 4# half-gray type gray scale mask (referred to as a semi-transmissive film type gray scale mask). The inventors have found that, in actuality, the exposure conditions (specific exposure wavelength distribution, specific optical conditions) used in the manufacture of the electronic device, the specific mask pattern 'particularly the line width of the semi-transmissive film portion, and the like, and There is a result of evaluating the reticle with a narrow area 'fine part (for example, a portion of the pattern having a width of less than 3 μm) ^, or judging that the use of the reticle to manufacture the electronic device is conditional (the imaging condition of the sequel) (Conditions) The present invention is based on the optical system of the exposure machine provided by the above-mentioned actual conditions, and the reticle performance, flaws, and photoresists of the main causes, such as reflecting the illusion of the earth, the photographic characteristics of the light source, and the like. The reticle information of the required electronic device/provided that the manufacturing method can be manufactured, the method, the π method, the manufacturing support of the electronic device, the quality display method, the manufacturing method of the electronic farm, and the light 2130-983β-PF/Ahddub 200912521 cover Products for the purpose. Further, in order to manufacture a photomask of an electronic device, when the exposure of the photomask is performed using an exposure machine, in order to form a desired photoresist pattern on the photoresist film on the transfer target, the photomask is used in an actual exposure machine. Under the exposure conditions, you must know the characteristics of the mask. Under the above-mentioned practical application of the exposure conditions, the reticle is used as information, and if it is provided in association with the reticle as a product, it is extremely useful in the manufacture of electronic devices. From the above viewpoints, the present invention has the following findings. The hood user, if there is the above-mentioned reticle λ, can grasp, for example, whether the use of the own exposure machine can be stabilized and the desired photoresist pattern, or how to control the change when using the exposure machine itself. The element, whether it is easy to get the desired photoresist pattern, and 'pre-accuracy of the exposure is easy to occur, review the preset exposure

條件的變更，又，盛I H 雙更又曝先以外的步驟（例如光阻顯像步驟）中，可以檢討消除不良的條件。不過’製造光罩的遮光罩製造’由於沒有保有光罩使用者使用的曝光機，遮光罩製平衣&磾貫掌握先罩使用者所要的光罩特性，再提供給光罩使用者，並非易事。為了解決上述的課題，達成上述的目的，本發明且有以下的任一結構。 [結構1] 根據本發明的光罩資訊 _ 貞疑取^法，係對於㈣加工的被加工層上形成的光阻膜，使用具有遮光部、透光部、及半透光部所形成的既定轉印條件下進行曝光，上述光阻膜^的先罩在既定的曝光 a尤阻臈變成具有上述蝕刻加工中成 2130-9836-PF;Ahddub 200912521 為遮光罩的光阻感胳 θ 東膜里不同的部位的光阻圖案，取得關於其中使用的上述弁罢认这屹尤罩的資訊的光罩資訊之取得方法，包括使用近似上述既宏& Rg + & & 疋的曝先條件的曝光條件，對上述光近似上述光罩的例試# I .隹—成r c元罩-戈 ^式先罩進订曝光；經由攝影裝置取得上述光罩或上述測試光罩的透射光圖案；產生光罩資訊，包Conditions can be changed, and in addition, steps other than exposure (such as photoresist development steps) can be reviewed to eliminate bad conditions. However, the 'manufacturing of the hood for the reticle' is not provided with the exposure machine used by the reticle user, and the hood is made of the hood and the reticle characteristics required by the user are provided to the reticle user. Not easy. In order to solve the above problems, the present invention achieves the above object and has any of the following configurations. [Structure 1] According to the reticle information of the present invention, the photoresist film formed on the processed layer of (4) is formed by using a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion. Under the predetermined transfer conditions, the first mask of the photoresist film is changed to a predetermined exposure to become 2130-9836-PF in the etching process; Ahddub 200912521 is a opaque photoresist θ east film. The method of obtaining the mask information of the different parts in the above, and obtaining the information about the mask used in the above, including the use of the above-mentioned macro & Rg + && Conditional exposure conditions, the above-mentioned light approximating the above-mentioned photomask example test I 隹成 rc 元罩 - 戈戈式式式进进 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Produce reticle information, package

含根據取得的^射光^案的透射㈣㈣H 述光罩資訊至上述光罩。 π [結構2] 上述被加工層具有結構1的光罩資訊之取得方法中係使用於液晶顯示裝置製造。 [結構3] 具有結構1的光罩資訊之敢 ^ ^ Μ % ^ 方法_，上述透光部的曝先先透射率為觸時，上述半透光部具有錢形成既定透射率未滿峨的半透光膜的部分。 [結構4] ’上述半透光部下形成解析界限具有結構1的光罩資訊之取得方法中在透明基板上’具有上述既定的曝光條件以下的尺寸的微細遮光圖案的部分。 [結構5] 具有結構3或4的光資訊包含對於曝光條件變透射率的變化傾向的資訊革資訊之取得方法中，上述光罩化的有關上述半透光部的曝光光 [結構6] 上述光罩在半具有結構3的光罩資訊之取得方法中 2130-9836-PF;Ahddub 200912521 透光部中具有半透光膜，上述光罩資訊包含對於上述半透光的膜厚或膜質變化的上述半透光部的曝光光透射率的變化傾向的資訊。 [結構7] 具有結構34 4的光軍資訊之取得方法中，上述光罩資訊包含對於圖案線寬的變化的有關上述半透光部的曝光光透射率的變化傾向的資訊。 [結構8] 根據本發明的光罩之品質顯示方法，係對於姓刻加工的被加工層上形成的光阻膜，使用具有遮光部、透光部、及半透光部所形成的既定轉印圖案的光罩，在既定的曝光條件下進行曝光，上述光阻膜變成具有上述钱刻加工中成為遮光罩的光阻殘膜量不同的部位的光阻圖案，顯示其中使用的上述光罩的品質的光罩品質顯示方法，包括，使用近似上述既定的曝光條件的曝光條件，對上述光罩或近似上述光罩的測試光罩進行曝光，經由攝影裝置取得上述光 =上述測試光罩的透射光圖案，產生包含根據取得的透射光圖案的透射并Jgj宏：备# 边射九圖案貝枓的光罩資訊的步驟，以及對應上述光罩資訊至上述光罩的步驟。 [結構9 ] 具有結構8的光罩之品質顯具不方法中，上述被加工層系使用於液晶顯示裝置製造。 [結構10] 具有結構8的光罩之品質顯示方法中，上述透光部的 2130-9836-PF;Ahddub 200912521 曝光光透射率為100%時，上述半透光部具有在透明基板上形成既定透射率未滿100%的半透光膜的部分。 [結構11] 具有結構8的光罩之品質顯示方法中，上述半透光部在透明基板上，具有上述既定的曝光條件下形成解析界限以下的尺寸的微細遮光圖案的部分。 [結構12] 具有結構10或11的光罩之品質顯示方法中，上述光罩資訊包含對於曝光條件的變化的有關上述半透光部的曝光光透射率的變化傾向的資訊。 [結構13] 八有~構1〇的光罩之品質顯示方法中，上述光罩在半透光部中具有半透光膜，上述光罩資訊包含對於上述半透光的膜厚或膜質變化的有關上述半透光部的曝光光透射率的變化傾向的資訊。 [結構14] 具有結構1G或U的光罩之品f顯示方法中，上述光罩資訊包含對於㈣線寬的變化的㈣上述半透光部的曝光光透射率的變化傾向的資訊。 [結構15] 根據本發明的電子裝置之製造支援方法，係對於飯刻加工的被加工層上形成的光阻膜，使用具有遮光部、透光部、及半透光部所形成的既定轉印圖案的光罩，在既定的曝光條件下進行曝光，包含上述光阻膜變成具有上述钱刻 2130-9836-PF;Ahddub 200912521 加工中成為遮光罩的光阻殘膜量不同的部位的光阻圖案之步驟，支援電子裝置製造的電子裝置之製造支援方法’，包括，使用近似上述既定的曝光條件的曝光條件，對上述光罩或近似上述光罩的測試光罩進行曝光，、經由攝影裳置取得上述光罩或上述測試光罩的透射光圖案’產生包含根據取得的透射光圖案的透射光圖案資料的光罩資訊的步驟，以及對應上述光罩資訊至上述光罩的步驟。 [結構16]The reticle information is transmitted to the reticle according to the transmitted (four) (four) H of the obtained light. π [Structure 2] The above-mentioned processed layer The method of obtaining the mask information having the structure 1 is used in the manufacture of a liquid crystal display device. [Structure 3] The reticle information of the structure 1 is ^^^ Μ % ^ method _, the first transmission rate of the light transmitting portion is time-sensitive, and the semi-transmissive portion has money to form a predetermined transmittance which is not full. Part of a semi-transparent film. [Structure 4] The above-described semi-transmissive portion is formed with a portion of the fine light-shielding pattern having the size below the predetermined exposure condition on the transparent substrate in the method of obtaining the mask information having the structure 1. [Structure 5] The light information having the structure 3 or 4 includes the exposure light of the semi-transmissive portion of the reticle in the method of obtaining information on the change in the transmittance of the exposure condition [Structure 6] The reticle has a semi-transmissive film in the light transmissive portion of the semi-transparent film in the method for obtaining the reticle information having the structure 3; the hood information includes the film thickness or the film quality change for the semi-transparent film. Information on the tendency of the exposure light transmittance of the semi-transmissive portion to change. [Structure 7] In the method of obtaining the optical information having the structure 34 4, the mask information includes information on a change tendency of the exposure light transmittance of the semi-transmissive portion with respect to a change in the line width of the pattern. [Structure 8] The method for displaying the quality of the photomask according to the present invention is to use a predetermined rotation formed by the light-shielding portion, the light-transmitting portion, and the semi-transmissive portion of the photoresist film formed on the layer to be processed. The mask of the printed pattern is exposed under a predetermined exposure condition, and the resist film is a resist pattern having a portion where the amount of the residual photoresist of the hood is different in the etching process, and the reticle used therein is displayed. The method for displaying a quality of the mask quality includes exposing the mask or the test mask adjacent to the mask using an exposure condition that approximates the predetermined exposure condition, and obtaining the light through the photographing device = the test mask Transmitting the light pattern produces a step of including reticle information according to the transmitted transmission light pattern and JGj macro: preparation # 边面九 pattern 枓, and a step corresponding to the reticle information to the reticle. [Structure 9] In the method of the quality display of the photomask having the structure 8, the above-mentioned processed layer is used in the manufacture of a liquid crystal display device. [Structure 10] In the quality display method of the photomask having the structure 8, when the light transmittance of the light transmitting portion is 2130-9836-PF and Ahddub 200912521 is 100%, the semi-transmissive portion is formed on the transparent substrate. A portion of the semi-transmissive film having a transmittance of less than 100%. [Structure 11] In the quality display method of the reticle having the structure 8, the semi-transmissive portion has a portion on the transparent substrate which has a fine light-shielding pattern having a size equal to or less than the analysis limit under the predetermined exposure conditions. [Structure 12] In the quality display method of the photomask having the structure 10 or 11, the mask information includes information on a change tendency of the exposure light transmittance of the semi-transmissive portion with respect to a change in exposure conditions. [Structure 13] In the method for displaying a quality of a photomask having a structure of 〇1, the reticle has a semi-transmissive film in the semi-transmissive portion, and the reticle information includes a film thickness or a film quality change for the semi-transmissive light. Information on the tendency of the exposure light transmittance of the semi-transmissive portion to change. [Structure 14] In the method of displaying a photomask having a structure 1G or U, the mask information includes information on a tendency of a change in the light transmittance of the semi-transmissive portion in the (four) line width. [Structure 15] According to the manufacturing support method of the electronic device of the present invention, a predetermined rotation formed by the light-shielding portion, the light-transmitting portion, and the semi-transmissive portion is used for the photoresist film formed on the workpiece layer processed by the rice processing. The mask of the printed pattern is exposed under a predetermined exposure condition, and the photoresist film including the above-mentioned photoresist film becomes the photoresist having the difference of the amount of the residual photoresist film which becomes the hood of Ahddub 200912521. The step of patterning, the method of supporting the manufacture of an electronic device for supporting the manufacture of an electronic device, includes exposing the photomask or the test mask of the photomask to the exposure mask using an exposure condition that approximates the predetermined exposure condition. The step of obtaining the transmitted light pattern of the photomask or the test mask generates a mask information including the transmitted light pattern data according to the acquired transmitted light pattern, and a step of corresponding to the mask information to the mask. [Structure 16]

具有結構15的電子裝置之製造支援方法中，上述電子裝置係液晶顯示裝置。 [結構17] 具有結構15的電子裝置之製造支衣知叉後方法中，上述透光部的曝光光透射率為1〇〇%時，上述牛透先部具有在透明基板上形成既定透射率未滿職的半透光膜的 [結構18 ] 八有、，·α構15的光電子裝置透光部在透明基板上，具有上錢上述半 M FF ^ ίγ λα ρ 疋的曝光條件下形成解析下的尺寸的微細遮光圖案的部分。 [結構19] 根據本發明的電子裝置之 ijh J, r & , ,，係對於钱刻加工的被加工層上形成的光阻膜及半透光部所形成的既部、透光部、條件下進行❹ 轉卩®案的光罩’在既定的曝光條件下進仃曝光’包含上述光 t ^ ^ ^ ^ 1 茭战具有上述蝕刻加工 T成為遮先罩的光阻 U们位的光阻圖案之步 2130-9836-PF；Ahddub 15 200912521 驟’電子裝置的製造方法中，包括，根據上述結構工中記 =取得方法產生的光罩資訊，#定曝光條件，根據上述、、、定的曝光條件，對上述光罩進行曝光的步驟。 [結構20] &具有結構19的電子裝置之製造方法中，根據上述光罩身訊’決定上述光阻的顯像條件、或上耗刻加條件。 χ·* [結構21] 光罩製品包括根據上述結構丨中記載的取得方法之罩資訊、及上述光罩。根據本發明的光罩資訊之取得方法中，使用近似既定的曝光條件的曝光條件（即，使用的曝光裝置可以再現模仿實際使用的曝光裝置的曝光條件的曝光條件），進行曝光此光罩的㈣錢案經由攝料置取得，再根據取得的透射光圖案，得到透射光圖案資料，由於產生包含上述透射光圖案資料的光罩資訊，根據上述光罩資m，可以決定反映曝光機的光學系統引起的主因、光源的光譜特性、光阻的顯像特性等的各主因的光罩曝光條件、被轉印體的加工條件。光罩此時’可以使用近似實際曝光中使用的光罩所作成的〇上述光罩資訊之取得方法，可、2、益拓仏和7 j以適用於電子裝置製造中使用的光罩。又’液晶顯示裝置作為上述電子裴置時別有用。X，本發明中，半透光部可以是在透明基板上形 2130-9836-PF;Ahddub 16 200912521 成半透光臈，以及在透明基板上形成曝光條件下的解析界限以下的尺寸的微細遮光圖案其之中任_。又，本發明中，光罩資訊可以包含對於光罩的半透光部的透射率的容許範圍臨界值。 f 根據本發明的光罩之品質顯示方法中，由於包括產生光罩資訊的步驟’使用近似既定曝光條件的曝光條件，對光罩進行曝光，以攝影裝置取得上述光罩的透射光圖案，再根據取得的透射光㈣，產生包含透射麵㈣料的光罩資訊；以及對應步驟，對應光罩資訊至對應此光罩資訊的光罩；根據上述光罩資訊’可以決定反映曝光機的光學系統引起的主因、光源的光譜特性、光阻的顯像特性等的各主因的光罩曝光條件、被轉印體的加工條件。此光罩的品質顯示方法可以適用於電子袭置製造中使用的光罩。又’可以是液晶顯示裝置作為此電子裝置。又，本發明中，半透光料以是在透明基板上形成半透光膜，以及在透明基板上形成曝光條件下的解析界限以下的尺寸的微細遮光圖案其t任一。又本發明中，光罩資訊可以包含對於光罩的半透光部的透射率的容許範圍臨界值。根據本發明的電子裝置之製造支援方法中，由於包括產生光罩資訊的步驟’使用近似既定曝光條件的曝光條件’對光罩U是近似光罩的測試光罩）進行曝光，以攝影裝置取得上述光罩的透射光圖案’再根據取得的透射光圖案’產生包含透射光圖案資料的光罩資訊；以及對歸驟，對應光罩資訊至對應此光罩資訊的光罩；#由提供如上述 2130-9836-PF;Ahddub 17 200912521 對應的資訊給電子裝置製造，可以決定反映曝光機的光學系統引起的主因、光源的光譜特性、光阻的顯像特性等的各主因的光罩曝光條件、被轉印體的加工條件。於是，可以迅速決定電子裝詈嗔』i告腺& 丁蒗罝裟&時的條件，可以實現高良率的生產條件。此電子裝置之製造支援方法，可以是液晶顯示裝置作為應用的電子裝置。又，本發明中，半透光部可以是在透明基板上形成半透夯眩，^ / 透光膜以及在透明基板上形成曝光條件下的解析界限以下的尺寸的微細遮光圖案其中任一。又本發明中’光罩資訊可以包含對於光罩的半透光部的透的容許範圍臨界值。根據本發明的電子裝置之製造方法中，由於根據明的光罩資訊之取得方法所取得的光罩資訊，製造電子裝二決：反映曝光機的光學系統引起的主因、光源的光譜特性、光阻的顯像特性等的各主因的光罩曝光條件印體的加工條件，可以製造高效率、高良率的電子裝置轉又，此電子裝置之製造方法中，根據光罩資訊，決定光罩的曝光條件、氺U日描M 、疋先阻膜的顯像條件、或蝕刻加工的蝕刻 ::、…可以製造反映曝光機的光學系統引起的主因、光源的光譜特性、光阻的顯像特性等的各主因的電子裝置。 …又’藉由本發明的光罩製品用於電子裝置之製造以决疋反映曝光機的光學系缔击+ m 性、光阻的顯像特== 光源的光譜特、，象特/·生專的各主因的曝光條件。又擇或決定被轉選被轉印體的加工（顯像、钱刻）條件，有助於製造 2130-9836-PF；Ahddub 18 200912521 良率、製造效率。【實施方式】以下’說明用以實施本發明的最佳實施例。 [根據本發明的光罩資訊之取得方法的概要] 根據本發明的光罩資訊之取得方法，係使用在透明基板上形成既定的轉印圖案的光罩，對轉印體使用曝光裝置進行曝光之時，根據以攝影裝置捕捉的光罩透射光的光強度刀佈可以預測經由曝光裝置的曝光實際轉印至被轉印體的圖案的光罩資訊之取得方法。在此，所謂的被轉印體係在玻璃基板等中形成所要的膜，且以光阻膜覆蓋。本發明的光罩資訊可以收容在媒體内，媒體係包含紙、記憶體等的電子記錄媒體，如果是資訊記錄媒體的話，就沒有限制。更具體地，作出近似曝光裝置的曝光條件的曝光條件，藉此將光罩或近似光罩的測試光罩曝光，得到的光罩育訊包含從透射光圖案得到的資料。於是，對應上述光罩資訊與光罩。在此所謂的對應，可以採用的方法有光罩資訊中包含與光罩對應的資訊，或光罩中顯示與光罩資訊對應的資訊等。、° 所謂曝光條件近似，例如，曝光波長近似。曝光光具有波長區的情況下，最大的光強度的曝光波長可以相同。更好的是，可以選擇具有與實際曝光波長相同的波長區的 2130-9836-PF;Ahddub 19 200912521 曝光條件。又’所謂曝光條件近似，也包含光學系統近似。例如成像系統的NA(開口數）略同，或（7( —致性）略同。在此’所謂NA略同’係對於實際的曝光機的να，例不為了得到光罩資訊而應用的光學系統為ΝΑ±〇〇〇5的情况。所谓σ略同，係對於實施的曝光機的σ，例示士〇. 〇 5 的範圍。又’不只是成像系統，最好照明系統的ΝΑ也略同。In the manufacturing support method of the electronic device having the structure 15, the electronic device is a liquid crystal display device. [Structure 17] In the method of manufacturing the electronic device having the structure 15, in the method after the light-emitting portion has an exposure light transmittance of 1%, the bovine transparent portion has a predetermined transmittance on the transparent substrate. [Structural 18] of the semi-transparent film of the unsatisfactory [structure 18] The light-transmitting portion of the optoelectronic device of the octagonal, and α-structure 15 is formed on the transparent substrate and has an exposure under the exposure conditions of the above-mentioned half M FF ^ γ λ α ρ 疋The portion of the fine shading pattern of the undersize. [Structure 19] The ijh J, r & , , of the electronic device according to the present invention is a portion, a light-transmitting portion formed by a photoresist film and a semi-transmissive portion formed on a processed layer processed by a money carving process, Under the condition, the reticle of the ❹ 卩案 ' 仃在在 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' Step 2130-9836-PF; Ahddub 15 200912521 The manufacturing method of the electronic device includes, according to the above-mentioned structure, the reticle information generated by the method, and the exposure condition, according to the above, The exposure condition is a step of exposing the reticle. [Structure 20] & In the method of manufacturing an electronic device having the structure 19, the development condition of the photoresist or the upper processing condition is determined based on the mask body. χ·* [Structure 21] The photomask product includes the cover information according to the acquisition method described in the above configuration, and the photomask. According to the method for obtaining reticle information of the present invention, exposure conditions for approximating predetermined exposure conditions (that is, exposure means for emulating an exposure condition of an exposure device actually used can be reproduced by using an exposure device), and exposure of the reticle is performed. (4) The money case is obtained through the photographing device, and the transmitted light pattern data is obtained according to the obtained transmitted light pattern. Since the mask information including the transmitted light pattern data is generated, according to the mask m, the optical of the exposure machine can be determined. The main cause of the system, the spectral characteristics of the light source, the development characteristics of the photoresist, and the like, the reticle exposure conditions of the main cause, and the processing conditions of the transfer target. The reticle can be used at a time to approximate the reticle information used in the actual exposure, and the reticle can be used for the manufacture of electronic devices. Further, the liquid crystal display device is useful as the above-described electronic device. X, in the present invention, the semi-transmissive portion may be formed on a transparent substrate 2130-9836-PF; Ahddub 16 200912521 semi-transparent tantalum, and a fine shading formed on the transparent substrate to a size below the resolution limit under exposure conditions The pattern is among them. Further, in the present invention, the mask information may include an allowable range threshold value for the transmittance of the semi-transmissive portion of the mask. f. According to the quality display method of the photomask of the present invention, the step of generating the mask information is performed by exposing the mask using an exposure condition that approximates a predetermined exposure condition, and obtaining a transmitted light pattern of the mask by the photographing device, and then Generating reticle information including the transmissive surface (four) according to the obtained transmitted light (4); and corresponding steps, corresponding to the reticle information to the reticle corresponding to the reticle information; according to the reticle information 'can be determined to reflect the optical system of the exposure machine The main cause of the light source, the spectral characteristics of the light source, the development characteristics of the photoresist, and the like, and the processing conditions of the transfer target. The quality display method of the reticle can be applied to a reticle used in the manufacture of electronic devices. Further, it may be a liquid crystal display device as the electronic device. Further, in the present invention, the semi-transparent material is formed by forming a semi-transmissive film on a transparent substrate and forming a fine light-shielding pattern having a size equal to or lower than an analytical limit under exposure conditions on the transparent substrate. In still another aspect of the invention, the mask information may include an allowable range threshold value for the transmittance of the semi-transmissive portion of the mask. According to the manufacturing support method of the electronic device of the present invention, the step of generating the mask information "exposing the exposure mask using the approximate exposure condition to the exposure mask of the mask U is an exposure mask" is performed by the photographing device. The transmitted light pattern of the reticle generates a reticle information containing the transmitted light pattern data according to the obtained transmitted light pattern; and a reticle corresponding to the reticle information corresponding to the reticle information; The above-mentioned information of 2130-9836-PF; Ahddub 17 200912521 is applied to the manufacture of electronic devices, and it is possible to determine the reticle exposure conditions of the main causes reflecting the main cause of the optical system of the exposure machine, the spectral characteristics of the light source, and the development characteristics of the photoresist. The processing conditions of the transferred body. As a result, the conditions for electronic mounting and the conditions of the electronic device can be quickly determined, and high-yield production conditions can be achieved. The manufacturing support method of the electronic device may be an electronic device to which the liquid crystal display device is applied. Further, in the present invention, the semi-transmissive portion may be formed by forming a semi-transparent glare on the transparent substrate, a light-transmissive film, and a fine light-shielding pattern having a size equal to or lower than an analysis limit under exposure conditions on the transparent substrate. Further, in the present invention, the reticle information may include an allowable range threshold value for the transmissive portion of the reticle. According to the method of manufacturing an electronic device of the present invention, the electronic device is manufactured by the reticle information obtained by the method for obtaining the reticle information, which reflects the main cause of the optical system of the exposure machine, the spectral characteristics of the light source, and the light. Depending on the processing conditions of the reticle exposure conditions, such as the development characteristics of the resist, it is possible to manufacture a high-efficiency, high-yield electronic device. In the manufacturing method of the electronic device, the reticle is determined based on the reticle information. Exposure conditions, 氺U-day M, development conditions of the first resist film, or etching by etching::, can produce the main cause caused by the optical system of the exposure machine, the spectral characteristics of the light source, and the development characteristics of the photoresist The electronic device of each main cause. ...by' the use of the reticle article of the present invention for the manufacture of an electronic device to reflect the optical system of the exposure machine, the m-effect, the development of the photoresist, the characteristic of the light source, the image of the light source, The exposure conditions of each main cause. It also selects or determines the conditions for processing (development, engraving) of the transferred body, which contributes to the manufacture of 2130-9836-PF; Ahddub 18 200912521 yield and manufacturing efficiency. [Embodiment] The following is a description of a preferred embodiment for carrying out the invention. [Outline of the method for obtaining the mask information according to the present invention] The method for obtaining the mask information according to the present invention is to use a mask that forms a predetermined transfer pattern on a transparent substrate, and expose the transfer body using an exposure device. At this time, the method of obtaining the mask information that is actually transferred to the pattern of the transfer target by the exposure of the exposure device can be predicted based on the light intensity of the light transmitted by the photomask captured by the photographing device. Here, the transfer-receiving system forms a desired film in a glass substrate or the like and is covered with a photoresist film. The photomask information of the present invention can be contained in a medium, and the media includes an electronic recording medium such as paper or memory. If it is an information recording medium, there is no limitation. More specifically, an exposure condition is obtained that approximates the exposure conditions of the exposure apparatus, whereby the mask of the reticle or the reticle is exposed, and the resulting reticle contains information obtained from the transmitted light pattern. Thus, the reticle information and the mask are corresponding. In the so-called correspondence, a method may be employed in which the mask information includes information corresponding to the mask, or information corresponding to the mask information is displayed in the mask. , ° The so-called exposure conditions are approximate, for example, the exposure wavelength is similar. In the case where the exposure light has a wavelength region, the exposure wavelength of the maximum light intensity may be the same. More preferably, 2130-9836-PF; Ahddub 19 200912521 exposure conditions having the same wavelength region as the actual exposure wavelength can be selected. Further, the so-called exposure condition approximation also includes an optical system approximation. For example, the NA (number of openings) of the imaging system is slightly the same, or (7 (synonymous) is slightly the same. Here, the so-called NA is the same as the να of the actual exposure machine, and is not applied for obtaining the mask information. The optical system is ΝΑ±〇〇〇5. The so-called σ is the same, for the σ of the exposure machine to be implemented, for example, the range of gentry. 〇5. Also 'not only the imaging system, but also the illumination system. with.

又’可以應用攝影系統的ΝΑ略同、且具有〇r幾乎相同的光學系統的曝光條件。又，本發明中，在近似實際曝光條件的曝光條件下，得到光罩的透射光圖案資料，但此近似的曝光條件，只要近似曝光波長、曝光光學系統中之任一即可。更好的是，曝光波長、曝光光學系統都近似。或者，光罩資訊可以包含最近似實際曝光的條件，且應用複數相異的條件時包含各透射光的圖案資料。例如，變化曝光光強度、光譜特性時的透射光圖案資料，也可以與近似上述曝光的條件共同包含在光罩資訊中。一本發明中，近似上述光罩的測試光罩，可以由與上述，罩相同的素料（具有透明基板、半透光膜時的材料及膜厚々、斤作$ 1包含近似上述光罩内所含的轉印圖案的圖案。例如上述光罩_’對應m的通道部，包含遮光部所 :的半透光部的轉印圖案時，包含同樣的形狀、同樣的線寬的轉印圖案的測試光罩符合上述光罩。士；〃有上述光罩的半透光部中使用的半透光膜’膜厚、媒質(組成)變化時’測定複數的透射率變化， 2130-9836-PF;Ahddub 200912521 可以包含此資訊作為光罩資訊的一部分。又，對於上述光罩的圖牵，仂 ^ ^ 、業依—疋的規則變化圖案線見’測定此時的透射率蠻化，牙丨、,—人Further, it is possible to apply the exposure conditions of the optical system in which the photographic system is similar and has almost the same 〇r. Further, in the present invention, the transmitted light pattern data of the photomask is obtained under exposure conditions under actual exposure conditions, but the approximate exposure conditions may be any one of the exposure wavelength and the exposure optical system. More preferably, the exposure wavelength and exposure optical system are similar. Alternatively, the mask information may contain conditions that most closely approximate the actual exposure, and the pattern data of each transmitted light is included when a plurality of different conditions are applied. For example, the transmitted light pattern data when the exposure light intensity and the spectral characteristics are changed may be included in the mask information together with the conditions similar to the above exposure. In one aspect of the invention, the test mask similar to the mask may be made of the same material as the above-mentioned cover (the material and the film thickness of the transparent substrate and the semi-transmissive film, and the thickness of the film is approximately 1). For example, the pattern of the transfer pattern contained in the mask _' corresponds to the transfer portion of the semi-transmissive portion of the light-shielding portion, and includes the same shape and the same line width. The patterned test reticle conforms to the above-mentioned reticle. The transmissivity change of the semi-transparent film used in the semi-transmissive portion of the reticle described above is measured, and the change in transmittance is measured. 2130-9836 -PF; Ahddub 200912521 can include this information as part of the mask information. Also, for the above-mentioned mask, the rule of the 变化^^, industry----the rule of change pattern is seen as 'measuring the transmittance at this time. Gums, - people

处科變化了以包含此資訊作為光罩I 訊的一部分。上述的光罩資訊，如疋半透光部中使用微細圖案的光罩的話’在掌握此變化引起的透射率變化作為上述微細圖案的線寬方面是有用％。上述的光罩資部，另一方面’如果是半透光部中使用半透光膜的光罩的話，在掌握此半透光部本身的線寬變化_透射率變化有用的。後述有關可以適用本發明的測試光罩的範例。本發明的光罩中，半透光部係透射一部分曝光光的部分。此部分在透明基板上包含形成的半透光性膜、或是在曝光條件下以遮光性膜形成解析界限以下的尺寸㈣細圖案、更以半透光性膜形成上述微細圖案等。此部分更包含以遮光部夾住且在解析界限以下的尺寸的透光部作為半透光部功能的情況。本發明中，所胡透射率圖案資料，係根據攝影裝置得到的透射光圖案而形成的資料，或是追加其他的資訊至得到的透射光圖案而形成的資料。透射率圖案資料，例如，可以是對於半透光部的區域的大小（遮光部所夾住的半透光部的寬度等）的變化，有關曝光光的透射量變化的資料’或者，也可以是對於曝光光的光量及波長變化，有關曝光光的透射量變化的資料。更可以疋附加實際上使用光罩形成光阻圖案之際的光阻處理 2130-9836-PF/Ahddub 21 200912521 條件（顯像條件等）的資料。透射率圖案資料，例如，如後述，可以是第丄圖的曲線所示的資料。又，本發明中，如上述，實際適用於光罩曝光的曝光料下，半透光部中的透射光對透射部的透射光的比例稱作貫政透射率。半透光部中，有實效透射率分佈時，為了方便，峰值作為實效透射率。此數值，相關於使用上述光罩在被轉印體上形成的、光阻圖案的上述部分的光阻殘膜值。、 —所謂半透光部，即透射上述曝光條件下的透光部的曝光光的透射率為100%時，具有比1〇〇%小的透射率（比〇大）的部分。半透光部最好具有具有2〇〜6〇%的實際透射率。因此，使上述光阻圖案的光阻殘膜與對應透光部或遮光的部分不同厚度。於是，膜固有的透射率，係透明基板上形成的膜具有定作為對於曝光光的波長、及曝光機的 /、 5大的膜形成面的、對於曝光光的入射量的透射光的量。即，曝光光的波長及曝光機的光學條件（辟明糸統、攝影系統的NA、4)，對光透㈣不影響的程度下’面積夠大的膜形成面中，實效透射率與上述曝光條下的固有透射率相等。另n例如’如果形成膜的半透光部的面積小的話，受到鄰接上述半透光部的其他部分(遮光部'透光部）的影響，對於在曝光條件下的曝光光的實致透射率，不同 2130-9836-PF；Ahddub 22 200912521 於膜固有的透射率。於疋，以本發明取得的光罩資訊中，在近似實際的曝光機的光學條件下，根據以攝影裝置所得到的遮光罩透射圖案的光強度分佈，預測被轉印體上的光阻圖案、或其光阻圖案作為遮光罩加工的被加工層圖案尺寸的結果值、光罩的透射率的變動所產生的這些形狀變動等，可以進行各種解析、評估。特別疋，本發明中，根據一對平行的遮光部的邊緣所夹的半透光部區域的中心的實效透射率，推測由上述遮光罩的曝光所得到的光阻圖案中的上述一對平行的遮光部的邊綠所爽的區域對應的形狀、上述—對平行的遮光部的邊綠間對應的既定透射率臨界值間隔、或殘膜值，因此，可以決定曝光條件。x，此光罩資訊可以用於決定對於曝光後的被轉印體的顯像及蝕刻的條件。第1圖係顯示一對平行的遮光部的邊綠所夹的半透光 β的中〜的實效透射率與其變化的曲線圖。如第1圖所示，一對平行的遮光冑SP1、SP2的邊緣所失的半透光部 up的寬度變窄時，實效透射率變低^目反地，—對平遮光部SP卜SP2的邊緣所夾的半透光部Hp的寬度變寬只效透射率變阿。因此，對於光罩的測試曝光中，半光部的實效透射率比所教的透射率高時，可以進行將半先部的寬度（-對平行的遮光部間的距離）變窄的補正 =地’對於_光罩的測試曝光中’半透光部的實效透射率比所希望的透射率低時，可以進行料透光部的寬度（一 2130-9836-PF/Ahddub 〇3 200912521 對平行的遮光部間的距離）變寬的補正。另一方面，關於既疋的光罩’半透光部的線寬的面内不均存在時，參考第1 圖，起源於線寬的變動，可以在實際曝光中先行知道實效透射率的變動在哪個範圍内。又，半透光部的寬度與實效透射率之間的關係，如第丨圖所示，根據曝光條件而變化。因此，光罩使用者，在曝光前，對於曝光條件的變化，可以推測形成的光阻殘膜。又，在此’如果半透光膜型灰階〆光罩的膜設計（半透光膜的膜厚、膜材料的決定）改變的 % 話，由於實效透射率改變，膜設計與實效透射率間的相關可以包含在本發明的光罩資訊中。又，以此光罩資訊之取得方法所取得的光罩資訊包括的資訊不只關於最終製品的光罩，還有製造光罩的途中的中間體。又，此光罩中，不只包括使用半透光膜的灰階光罩，還有使用微細圖案的灰階光罩。本發明的光罩，可以如下製造。即，在透明基板上準〇備依序以半透光膜、及遮光膜堆叠的空白光罩。上述空白光罩上，對應遮光部與半透光部的區域形成光阻圖案，並以上述光阻圖案作為遮光罩，蝕刻露出的遮光膜。以上述光阻圖案或遮光膜作為遮光罩，藉由触刻露出的半透光膜，形成透光部。其次，至少在包含想作為遮光部之處的區域，形成光阻圖案，以上述光阻圖案作為遮光罩，藉由姓刻露出的遮光膜，形成半透光部及遮光部。因此，透明基板上，彳以％•到以半透光膜構成的半透光冑、半透光膜及遮光膜的堆疊膜構成的遮光部、及透光部形成的光罩。 2130-9836-PF; Ahddub 24 200912521 又’本發明的光罩也可以如下製作。即，在透明基板上準備形成遮光膜的空白光罩。上述空白光罩上，對應遮光部的區域形成光阻圖案’並以上述光阻圖案作為遮光罩’藉由蝕刻露出的遮光膜，形成遮光膜圖案。其次，除去光阻圖案後’在基板全面形成半透光膜。於是，對應半透光部（或半透光部及遮光部）的區域中，形成光阻圖案，並以上述光阻圖案作為遮光罩，藉由蝕刻露出的半透光膜’形成透光部及半透光部。因此，在透明基板上，可以得到半透光部、遮光膜與半透光膜的堆疊膜構成的遮光部、及透光部形成的光罩。又，本發明的光罩也可以製造如下。即，在透明基板上形成遮光膜的空白光罩上，對應遮光部及透光部的區域中，形成光阻圖案，以上述光阻圖案作為遮光罩，藉由蝕刻露出的遮光膜，露出對應半透光部的區域的透明基板。其次，除去光阻圖案後，在基板全面形成半透光膜，在對應遮光部及半透光部的區域形成光阻圖案，以上述光阻圖案為遮光罩，藉由蝕刻露出的半透光膜（以及半透光膜及遮光膜），可以形成透光部及遮光部、以及半透光部。又，如上述，也可以作為灰階光罩，具有依遮光膜的微細圖案調整透射率的半透光部。本發明中’品質顯示包括添加上述光罩資訊作為上述光罩的附屬資訊，或光罩及上述光罩資訊對應的狀態下，以通訊手段傳達及揭示。通信手段可以由通訊電路構成戋物理的媒體構成。 2130-9836-PF;Ahddub 25 200912521 [本發明中使用的資訊取得手段的構成] 此光罩資訊的取得方法中’如第2圖所示，可以使用檢查裝置。此檢查裝置中’光罩3以光罩維持部3a維持。此光罩維持部3a，以光罩3的主平面為略錯直的狀態，支夺光罩3的下端部及側緣部近旁，傾斜此光罩3而維持固疋。此光罩維持部3a可以維持以光罩3來說大型(例如主平面1 220随（毫米）xl4〇〇mm，厚13龍）且各種大小的光罩 3。即，此光罩維持部3a中，由於主要支持主平面為略鉛直狀態的光罩3的下端部’即使光罩3的大小不同，也可以以相同的支持部材支持光罩3的下端部。 =在此，所謂略錯直，即第2圖所示離開錯直的角度Θ :好約1〇度以内。又’離開鉛直的角度在2度至10度的色圍内更好’而在4度至10度的範圍内更好。於是，藉由使^持傾斜光罩3的光罩持光罩3的過裎中，π、， I⑽維防止光罩3翻倒’並穩定維持、固疋光罩3。又，收_4*，m 持先罩3完全鉛直的話，光罩3的全 «量集中在下_ ’增大損傷光罩3的可能性。藉用土 ::傾斜先罩3的維持部％，光罩3的重量分散J 的支持,=，可以防止料3的損傷。複數於疋’檢查裝置中，由於光13的主平面如上述維持 T以抑制檢查裝置的設置面積增大，同時可以抑制微粒往光罩上落下。了以抑於疋’檢查裝置具有發出既定波長的光可以使用例如鹵紊柊人s上疋碌1 〇素燈、金屬鹵化物燈、UPH燈（超高壓水銀 2130-9836-pF；Ahddub _ λ 6 200912521 燈）’作為光源1。於是，檢查裝置具有照明光學系統2，引導來自光源工的檢查光並照射檢查光至由光罩維持部3a所維持的光罩 3。此照明光學系統2，為了可改變開口數（NA)，具有開口光圈機構2-卜又，照明光學系統2,最好具有用以調整光罩3内檢查光的照射範圍的視野光圈2_2。經過照明光學系統2的檢查光，照射至光罩維持部％所維持的光罩3 = {' 照射至光罩3的檢查光，透過光罩3,人射至對物鏡系統4。此對物鏡系統4具有光圈機構4]，因此開口數⑽The department changed to include this information as part of the mask I. The above-mentioned mask information, such as a mask using a fine pattern in the semi-transmissive portion, is useful in grasping the change in transmittance due to the change as the line width of the fine pattern. On the other hand, in the case of the photomask portion in which the semi-transmissive film is used in the semi-transmissive portion, it is useful to grasp the change in the line width-transmittance of the semi-transmissive portion itself. An example of a test reticle to which the present invention can be applied will be described later. In the photomask of the present invention, the semi-transmissive portion transmits a portion of the portion of the exposure light. This portion includes a semi-translucent film formed on the transparent substrate, or a size (4) fine pattern which is equal to or less than the analysis limit of the light-shielding film under exposure conditions, and a fine pattern formed by a semi-translucent film. This portion further includes a case where the light transmitting portion sandwiched by the light shielding portion and having a size below the analysis limit function as a semi-transmissive portion. In the present invention, the Hu transmittance pattern data is data formed by a transmitted light pattern obtained by a photographing device, or data obtained by adding other information to the obtained transmitted light pattern. The transmittance pattern data may be, for example, a change in the size of the region of the semi-transmissive portion (the width of the semi-transmissive portion sandwiched by the light-shielding portion, etc.), and a change in the amount of transmission of the exposure light'. It is a data on the change in the amount of exposure light and the change in the amount of transmission of the exposure light. It is also possible to attach a photo-resistance treatment 2130-9836-PF/Ahddub 21 200912521 condition (development condition, etc.) at the time of actually forming a photoresist pattern using a photomask. The transmittance pattern data, for example, as described later, may be the data shown by the curve of the figure. Further, in the present invention, as described above, the ratio of the transmitted light in the semi-transmissive portion to the transmitted light in the transmissive portion is referred to as the coherent transmittance in the exposure material which is actually applied to the exposure of the mask. In the semi-transmissive portion, when there is a practical transmittance distribution, the peak serves as an effective transmittance for convenience. This value relates to the residual photoresist film value of the above-described portion of the photoresist pattern formed on the object to be transferred using the above-described reticle. In the case of the semi-transmissive portion, that is, when the transmittance of the light that is transmitted through the light-transmitting portion under the above-described exposure conditions is 100%, the transmittance is larger than 1% by weight (larger than 〇). The semi-transmissive portion preferably has an actual transmittance of from 2 〇 to 6 〇%. Therefore, the photoresist film of the photoresist pattern is made to have a different thickness from the portion corresponding to the light transmitting portion or the light shielding portion. Then, the transmittance of the film is such that the film formed on the transparent substrate has an amount of transmitted light which is set as the incident light amount with respect to the wavelength of the exposure light and the film formation surface of the exposure machine. That is, the wavelength of the exposure light and the optical conditions of the exposure machine (the clear system, the NA of the imaging system, 4), and the degree of the light transmission (four) do not affect the degree of the area of the film formation surface, the effective transmittance and the above The inherent transmittance under the exposure strip is equal. Further, for example, 'if the area of the semi-transmissive portion forming the film is small, it is affected by the other portion (light-shielding portion 'light-transmitting portion) adjacent to the semi-transmissive portion, and the actual transmission of the exposure light under the exposure condition Rate, different 2130-9836-PF; Ahddub 22 200912521 Intrinsic transmittance in the film. In the mask information obtained by the present invention, the photoresist pattern on the transfer target is predicted based on the light intensity distribution of the hood transmission pattern obtained by the photographing device under the optical condition of the actual exposure machine. Or, the photoresist pattern can be variously analyzed and evaluated as a result of the size of the layer pattern of the processed layer processed by the mask and the shape variation caused by the variation of the transmittance of the mask. In particular, in the present invention, the pair of parallels in the resist pattern obtained by the exposure of the hood is presumed based on the effective transmittance of the center of the semi-transmissive region sandwiched by the edges of the pair of parallel light-shielding portions. The shape of the light-shielding portion corresponding to the region where the green color is cool, and the predetermined transmittance threshold value or the residual film value corresponding to the edge green of the parallel light-shielding portion can determine the exposure conditions. x, the mask information can be used to determine the conditions for development and etching of the exposed object after exposure. Fig. 1 is a graph showing the effect of the medium transmittance of the semi-transmissive β of the pair of parallel light-shielding portions, and the change thereof. As shown in Fig. 1, when the width of the semi-transmissive portion up lost by the edges of the pair of parallel shading pads SP1, SP2 is narrowed, the effective transmittance becomes lower, and the flat shading portion SP is SP2. The width of the semi-transmissive portion Hp sandwiched by the edge is widened, and the transmittance is only changed. Therefore, in the test exposure of the reticle, when the effective transmittance of the semi-light portion is higher than the taught transmittance, the correction of narrowing the width of the semi-first portion (the distance between the parallel opaque portions) can be performed. In the test exposure of the _mask, when the effective transmittance of the semi-transmissive portion is lower than the desired transmittance, the width of the transparent portion of the material can be performed (a 2130-9836-PF/Ahddub 〇3 200912521 parallel) The distance between the shades is widened. On the other hand, when the in-plane unevenness of the line width of the semi-transmissive portion of the mask of the cymbal is present, referring to the first figure, the variation of the line width is derived, and the change of the effective transmittance can be known first in the actual exposure. In which range. Further, the relationship between the width of the semi-transmissive portion and the effective transmittance is varied depending on the exposure conditions as shown in the first drawing. Therefore, the mask user can estimate the formed photoresist residual film before the exposure. Moreover, here, if the film design of the semi-transmissive film type gray scale reticle (the thickness of the semi-transmissive film, the determination of the film material) is changed, the film design and the effective transmittance are changed due to the change in the effective transmittance. The correlation between the two can be included in the reticle information of the present invention. Moreover, the reticle information obtained by the method of obtaining the reticle information includes information not only on the reticle of the final product but also on the middle of the reticle. Further, in the reticle, not only a gray scale mask using a semi-transmissive film but also a gray scale mask using a fine pattern is included. The photomask of the present invention can be produced as follows. That is, a blank mask in which a semi-transmissive film and a light-shielding film are sequentially stacked is prepared on the transparent substrate. In the blank mask, a photoresist pattern is formed in a region corresponding to the light shielding portion and the semi-light transmitting portion, and the exposed light shielding film is etched by using the photoresist pattern as a light shielding mask. The light-receiving portion is formed by the above-mentioned photoresist pattern or light-shielding film as a light-shielding film by the semi-transmissive film exposed by the contact. Next, at least in a region including a portion to be a light-shielding portion, a photoresist pattern is formed, and the light-resisting pattern is used as a light-shielding mask, and a semi-transmissive portion and a light-shielding portion are formed by a light-shielding film which is exposed by a surname. Therefore, on the transparent substrate, a light-shielding portion composed of a semi-transparent ytterbium, a semi-transmissive film, and a light-shielding film, and a light-shielding portion formed of a light-transmitting portion are formed. 2130-9836-PF; Ahddub 24 200912521 Further, the photomask of the present invention can also be produced as follows. That is, a blank mask for forming a light shielding film is prepared on the transparent substrate. In the blank mask, a photoresist pattern is formed in a region corresponding to the light-shielding portion, and the light-shielding film is formed by etching the exposed light-shielding film as the light-shielding pattern. Next, a semi-transmissive film is formed entirely on the substrate after the photoresist pattern is removed. Then, a photoresist pattern is formed in a region corresponding to the semi-transmissive portion (or the semi-transmissive portion and the light-shielding portion), and the light-resisting portion is formed by etching the exposed semi-transparent film as the light-shielding mask. And a semi-transmissive portion. Therefore, on the transparent substrate, a light-shielding portion composed of a semi-transmissive portion, a stacked film of the light-shielding film and the semi-transmissive film, and a photomask formed of the light-transmitting portion can be obtained. Further, the photomask of the present invention can also be manufactured as follows. In other words, in the blank mask on which the light-shielding film is formed on the transparent substrate, a photoresist pattern is formed in a region corresponding to the light-shielding portion and the light-transmitting portion, and the photoresist pattern is used as a light-shielding mask, and the exposed light-shielding film is exposed to expose A transparent substrate in the region of the semi-transmissive portion. Next, after removing the photoresist pattern, a semi-transmissive film is formed on the entire surface of the substrate, and a photoresist pattern is formed in a region corresponding to the light-shielding portion and the semi-transmissive portion, and the light-resisting pattern is used as a light-shield, and the semi-transparent light is exposed by etching. The film (and the semi-transmissive film and the light-shielding film) can form a light transmitting portion, a light blocking portion, and a semi-light transmitting portion. Further, as described above, the gray scale mask may have a semi-transmissive portion in which the transmittance is adjusted in accordance with the fine pattern of the light-shielding film. In the present invention, the quality display includes the addition of the reticle information as an attachment information of the reticle, or a communication means to convey and reveal in a state in which the reticle and the reticle information correspond. The communication means can be constituted by a communication circuit and a physical medium. 2130-9836-PF; Ahddub 25 200912521 [Configuration of information acquisition means used in the present invention] In the method of acquiring the mask information, as shown in Fig. 2, an inspection apparatus can be used. In the inspection apparatus, the mask 3 is held by the mask holding portion 3a. In the reticle maintaining portion 3a, the main surface of the reticle 3 is slightly displaced, and the lower end portion and the side edge portion of the reticle 3 are supported, and the reticle 3 is tilted to maintain the solid state. The reticle maintaining portion 3a can maintain a large size (e.g., a main plane 1 220 with (mm) x 14 mm, a thickness of 13 dragons) and various sizes of the reticle 3 in the reticle 3 . In other words, in the reticle maintaining portion 3a, the lower end portion of the reticle 3 which mainly supports the main plane in a slightly vertical state can support the lower end portion of the reticle 3 with the same supporting member even if the size of the reticle 3 is different. = Here, the so-called slightly wrong straight, that is, the angle of leaving the straight line as shown in Fig. 2: within about 1 degree. Further, it is better to leave the vertical angle in the color range of 2 to 10 degrees and more preferably in the range of 4 to 10 degrees. Then, by holding the mask of the tilt mask 3 in the overhang of the mask 3, π, I (10) prevent the mask 3 from falling over and stably maintain and fix the mask 3. Further, when the hood 4 is completely vertical, the total amount of the reticle 3 is concentrated on the lower _ and the possibility of damaging the reticle 3 is increased. By borrowing the soil: the maintenance portion % of the tilting cover 3, the weight of the photomask 3 is dispersed by the support of J, and the damage of the material 3 can be prevented. In the plurality of inspection devices, since the main plane of the light 13 is maintained as described above to suppress an increase in the installation area of the inspection device, it is possible to suppress the particles from falling onto the mask. In order to prevent the 疋' inspection device from emitting light of a predetermined wavelength, for example, a halogen 柊柊疋 1 1 1 〇〇金属金属金属金属金属金属金属金属金属金属金属金属金属金属金属金属金属金属金属金属金属金属超超超超超超超超超超超超超超超超超超超6 200912521 Light) 'As light source 1. Then, the inspection apparatus has the illumination optical system 2, guides the inspection light from the light source worker, and irradiates the inspection light to the reticle 3 held by the reticle holder 3a. The illumination optical system 2 has an aperture mechanism 2-b in order to change the number of apertures (NA), and the illumination optical system 2 preferably has a field aperture 2_2 for adjusting the illumination range of the inspection light in the mask 3. The inspection light that has passed through the illumination optical system 2 is irradiated to the mask 3 that is maintained by the mask holding portion % = {' inspection light that is irradiated onto the mask 3, passes through the mask 3, and the person is incident on the objective lens system 4. The pair of objective lens systems 4 have an aperture mechanism 4], so the number of openings (10)

可變。此對物鏡系，统4可以具備例如：第4(模擬鏡）I 透射光罩3的檢查光入射’將此光束加上無限遠補正成為平行光；以及第2群（成像鏡）4b，使經過此第1群的成像。此檢查裝置中，由於照明光學系統2的開口數與對物兄糸'4的開口數分別可變，照明光學系、统2的開口數對 C ί對物鏡系統4的開口數之比，即，Σ · m 值（σ . —致性）為可變。一致性σ係照明光學系铋9 M „ 的開口數之比。的開口數對對物鏡系統4 經過對物鏡系統4的光束，由槁 # t卜播旦^ 九朿由攝影部（攝影裝置）5受先。此攝影部5拍攝又丼缸a -扯、& 例如，可以使用CCD(電 ° ° ^ )等的攝影元件作為此攝影部5。影影:二查褒置t，有關經由攝影部5所得到的攝等，設置：来圖理、演算、與既定的臨界值的比較及顯示等-置由未圖示的控制裝置及顯示裝置執行。 2130-9836-PF/Ahdclub ^ 200912521variable. The pair of objective lens systems 4 may include, for example, a fourth (analog mirror) I transmission light of the transmission mask 3, 'incorporating the light beam with infinity to become parallel light; and a second group (imaging mirror) 4b, Imaging through this first group. In this inspection apparatus, since the number of openings of the illumination optical system 2 and the number of openings of the object 糸 '4 are variable, the ratio of the number of openings of the illumination optical system 2 to the number of openings of the objective lens system 4 is , Σ · m value (σ.) is variable. The ratio of the number of openings of the uniform σ-system illumination optical system 铋9 M „. The number of apertures to the objective lens system 4 passes through the beam of the objective lens system 4, by the 摄影# t卜播旦^九朿 by the photography department (photographic device) 5, the photographing unit 5 is photographed and the cylinder is a-pulled, and the photographing unit such as a CCD (electric ° ° ^ ) can be used as the photographing unit 5. For example, the photographing unit 2: The photographing and the like obtained by the photographing unit 5 are set such that the graph, the calculation, the comparison with the predetermined threshold value, and the display are performed by a control device and a display device (not shown). 2130-9836-PF/Ahdclub ^ 200912521

…Λ檢查裝置中’對於使用既定的曝光光所得到的衫衫像’或者’根據攝影影像得到的光強度分佈，以於制部執行^的演算，彳以求得在使用其他曝光光的料、影如像，或疋，光強度分佈。例如，此檢查裝置中，在g線、h線及i線相同的光強度比的曝光條件中得到光強度分佈時’可以求得g線、h線及i線的光強度比為1 : 的+光條件下曝光時的光強度分佈。因此，此檢查襄置中也包含曝光裝置内使用的照明光源種類、個體差及曝光裝置内使用的照明經時變化產生的每波長的強度變動，可以評估再現實際制㈣光裝置巾的曝光條件，又，、一裝置中，假定所希望的光阻的殘膜量時，可以簡便求得可達成的最適當的曝光條件。吏用此才欢查裝置進行有關本發明的光罩資訊之取得方法中’照明光學系 '統2與對物鏡系統4及攝影部5之間，夾住維持主平面略錯直的光I 3(在此為賴光罩），在對峙的位置中分別配設，冑兩者的光軸一致的狀態下，進行檢查光的照射及受光。這些照明光學系統2、對物鏡系統* 及攝〜邛5 ’可以由未圖示的移動操作部支持可能的移動操作。此移動操作部使照明光學系統2、對物鏡系統4及攝影部5的各光軸互相一致的㈣，可以對光罩3的主平面平行移$ it匕檢查裝置中，ϋ由設置如此的移動操作部，即使檢查大型的光罩時，不必在主平面上往平行方向移動光罩3 ’可以全面檢查光罩3的主平面，X，可以選擇性檢查主平面上所希望的部位。 2130-9836-PF;Ahddub 28 200912521 於是，此檢查裝置中，藉由控制部及鏡系統4及攝影部5可以分機構，對物刀乃j彺先軸方向移對物鏡系統4及攝影部5可以互為獨立地改作1些相對距離。此檢查裝置_，、光罩3的韁由對物鏡系統4及摄$ # 可以獨立地往光軸方向移動，可及攝影4 5 仃曝光的曝光裝置的狀態下的攝影… ：罩]進 4的焦距，可以以攝影部5 ' '鏡系統 1 ΰ拍攝先罩3的暈化像。於是’此檢查裝置的控制部’控制照明光學系視野光圈2-2及開口光圈機構2 、异圃μ德，對物鏡糸統4的開口先圈機構4-卜驅動機構、移動操作部。上述使用此檢查裝置的光罩資訊之取得方法中，對物在 ^開口數（NA)及Σ值（照明光學系統2的開口數對於對物鏡糸統4的開口數的比)維持在既定值的狀態下，便…月“糸統2、對物鏡系統4及攝影部這些光軸-致的狀態下’在光罩維持部3維持的光罩3的主平面上往平面方向移動操作的同時，可以在光軸方向互為獨立移動操作對物鏡系統4及攝影部5。 [本發明的目標光罩] 根據本發明的光罩資訊之取得方法的目標光罩，不口是完成的光罩，也包括製造光罩途中的中間體作為製品了又’不特別限制此光罩的種類及用途。即，可以檢查在透明基板的主表面上具有遮光部、透光部及半透光部（灰階部）的灰階光罩。又，灰階部中，包含形成半透光膜的半透光部、以及 2130-9836-PF;Ahddub 29 200912521 曝光條件下的解析界限以下的微細圖案產生的灰階部兩者。即，灰階遮光罩中，包含兩者：具有灰階部的光罩（半透光膜型灰階光罩），灰階部中形成曝光光的透射光量比 100%小（例如40〜60%)的半透光性膜；以及具有灰階部的光罩（微細圖案型灰階遮光罩），藉由具有在曝光條件下的解析界限以下的遮光性、或半透光性的微細圖案，減低透射光量。 [關於灰階光罩] 在此，說明關於根據本發明的光罩的檢查裝置中成為檢查對象的灰階光罩。具有TFT的液晶顯示裝置，即TFT_LCD，相較於陰極射線官（CRT )’由於容易薄型化且消耗電力低的優點，現在達到廣泛使用中。TFT-LCD具有在矩陣狀上排列的各晝素中排列TFT構造的TFT基板、以及對應各晝素排列紅（R)、綠（G)、藍（B)的畫素圖案的顏色濾光器以液晶層介於其間互相重豎的構造。上述的TFT-LCD，製造步驟數多，且光疋TFT基板，就使用5到6枚的光罩來製造。如此的狀況下，提供使用4枚的光罩來進行TFt基板的製造。此方法’使用具有遮光部、透光部及灰階部的灰階光罩，藉此減低使用的遮光罩枚數。第3圖及第4圖中，顯示使用灰階光罩的TFT基板的製造步驟的一範例。首先’如第3圖中（a)所示，在玻璃基板2〇1上，形成問極電極用金屬膜’並以使用光罩的微影成像步驟形成閘極電極202。之後’依序形成閘極絕緣膜2〇3 '第1半導體 2130-9836-PF;Ahddub 30 200912521 膜U-Si)204、第2半導體膜（N + a_Si)2〇5、源極/汲極用金屬膜206以及正型光阻膜2〇7。其次，如第3圖中（b)所示，使用具有遮光部1〇1、透光部102及灰階部103的灰階光罩1〇〇，將正型光阻膜2〇7 曝光、顯像，形成第i光阻圖案2〇7A。第i光阻圖案2〇7八覆k TFT通道部、源極汲極形成區域及資料線形成區域，且TFT通道部形成區域比覆蓋源極/汲極形成區域薄。 ( 接著，如第3圖中（c)所示，第1光阻圖案2〇7A作為遮光罩，蝕刻源極/汲極用金屬膜2〇6、第2及第i半導體膜 205、204。其次，如第4圖中（a)所示，藉由以氧灰化，使光阻圖案207全體減少，除去通道部形成區域的薄光阻膜，形成第2光阻圖案207B。之後，如第4圖中（b)所示，第2光阻圖案2 0 7B作為遮光罩，蝕刻源極汲極用金屬膜2 〇 6，形成源極/汲極206A、206B，其次蝕刻第2半導體膜2〇5。最 C. 後，如第4圖中（c)所示，剝離殘存的第2光阻圖案207ββ 在此使用的灰階光罩100，如第5圖所示，具有對應源極/汲極的遮光部101Α、101β、透光部1〇2以及對應tft 通道部的灰階部103。灰階部1〇3,係使用灰階光罩1〇〇的大型LCD用曝光裝置的曝光條件下，解析界限以下的微細圖案構成的遮光圖案103A形成的區域。遮光部1〇1Α、1〇1β 及遮光圖案103A，通常都是由鉻或鉻化合物等相同的材料構成的相同厚度的膜所形成。使用上述灰階光罩的大型lcd 用曝光裝置的解析界限’在階梯方式的曝光裝置中約3# 2130-9836-PF/Ahddub 31 200912521 m比(：米），在鏡投影方式的曝光裝置中約4 “瓜。因此，灰 Ρ白部1〇3中’透射部103β的間距寬及遮光圖案103Α的線寬’分別為曝光褒置的曝光條件下的解析界限以下的例如未滿3 # m。 ―上述微細圖案型的灰階部1〇3的設計中，用以具有遮光部101A、101B與透光部1〇2之間的半透光（灰階）效果的微細圖案’有作成線和間距型，或是作成點（網點）型，或是作成其他的圖案的選擇。x，如果是線和間距型時，可乂適田叹β十線寬為多少、光透射的部分與遮光部分的比率、全體的透射率到何種程度的設計等。半透光膜型的灰階光罩，例如，可以如下製造。在此，舉例說明TFT基板的圖案。此圖案，如第3(b)圖中所說明的’由對應TFT基板的源極及波極的圖案所形成的遮光部 1對應TFT基板的通道的圖案所形成的灰階冑以及在這些圖案周圍形成的透光部1〇2所構成。耳先，準備在透明基板上依序形成半透光膜及遮光膜的空白遮光罩，上述空白遮光罩上形成光阻臈。其次，進行圖案描繪，藉由顯像’在對應圖案的遮光部及灰階部的區域中形成光阻圖案。其次’藉由以適當的方法蝕刻，除去不形成光阻圖案的透光部對應的區域的遮光膜與其下層的半透光膜，形成圖案。因此，形成透光部102，同時，圖案的遮光部1〇1與灰階部103所對應的區域的遮光圖案形成。因此，除去殘存的光阻圖案後’再在基板上形成光阻膜，進行圖案猫繪， 32 2l30-9836-PF;Ahddub 200912521 藉由顯像’在圖案的遮光部1〇1對應的區域中形成光阻圖案0 其次，藉由適當的蝕刻，只除去不形成光阻圖案的灰階部…的區域的遮光膜。藉此，形成由半透光膜的圖案所產生的灰階部1 03，同時，形成遮光部1〇1的圖案。 [關於灰階光罩的資訊取得方法]...in the inspection device, 'for the use of a predetermined exposure light, the shirt image 'or' is based on the light intensity distribution obtained from the photographic image, so that the calculation of the execution of the image is performed to obtain the material for using other exposure light. , like the image, or 疋, light intensity distribution. For example, in the inspection apparatus, when the light intensity distribution is obtained in the exposure conditions of the same light intensity ratio of the g line, the h line, and the i line, the light intensity ratio of the g line, the h line, and the i line can be determined to be 1: + Light intensity distribution at the time of exposure under light conditions. Therefore, the inspection device also includes the illumination source type used in the exposure device, the individual difference, and the intensity variation per wavelength generated by the illumination used in the exposure device over time, and can evaluate the exposure conditions of the actual (4) optical device towel. Further, in a device, when the residual film amount of the desired photoresist is assumed, the most appropriate exposure conditions that can be achieved can be easily obtained. In the method for obtaining the mask information according to the present invention, the illumination optical system 2 and the objective lens system 4 and the imaging unit 5 sandwich the light I 3 which is slightly misaligned to maintain the main plane. (here, the ray mask) is disposed in each of the positions of the cymbals, and the inspection light is irradiated and received in a state where the optical axes of the two are aligned. These illumination optical systems 2, the objective lens system*, and the camera 邛5' can support possible movement operations by a moving operation unit not shown. The movement operation unit causes the illumination optical system 2 to match the optical axes of the objective lens system 4 and the imaging unit 5 with each other (4), and can move the main plane of the reticle 3 in parallel with the inspection device, and set such movement. In the operation unit, even when the large reticle is inspected, it is not necessary to move the reticle 3 in the parallel direction on the principal plane. The main plane of the reticle 3 can be completely inspected, and X can selectively check the desired portion on the principal plane. 2130-9836-PF; Ahddub 28 200912521 Therefore, in the inspection apparatus, the control unit, the mirror system 4, and the photographing unit 5 can be divided into a mechanism, and the object knife is moved in the direction of the first axis to the objective lens system 4 and the photographing unit 5 They can be changed independently to each other by a relative distance. The inspection device _, the reticle 3 of the reticle 3 can be independently moved to the optical axis direction by the objective lens system 4 and the camera # #, and can be photographed in the state of the exposure device of the exposure of 4 5 ......: hood] 4 The focal length can be used to capture the hazy image of the hood 3 in the photographic unit 5'' Mirror System 1 。. Then, the control unit of the inspection device controls the illumination optical system field stop 2-2, the aperture mechanism 2, and the opening, the opening mechanism 4, the movement mechanism, and the movement operation unit. In the method for obtaining the mask information using the inspection apparatus described above, the number of openings (NA) and the threshold value (the ratio of the number of openings of the illumination optical system 2 to the number of openings of the objective lens system 4) are maintained at a predetermined value. In the state of the moon, "the system 2, the objective lens system 4, and the imaging unit are in the optical axis state" while moving in the planar direction on the principal plane of the mask 3 maintained by the mask holding portion 3 The objective lens system 4 and the photographing unit 5 can be independently moved in the optical axis direction. [Target mask of the present invention] The target mask of the method for obtaining the mask information according to the present invention is not a completed mask. Also, the intermediate body in the middle of manufacturing the reticle is used as a product, and the type and use of the reticle are not particularly limited. That is, it is possible to inspect the main surface of the transparent substrate to have a light shielding portion, a light transmitting portion, and a semi-light transmitting portion ( a gray scale mask of the gray scale portion. Further, the gray scale portion includes a semi-transmissive portion forming a semi-transmissive film, and 2130-9836-PF; Ahddub 29 200912521 produces a fine pattern below the analysis limit under exposure conditions. Both grayscale parts. The step hood includes both: a photomask having a gray scale portion (a semi-transmissive film type gray scale mask), and the amount of transmitted light forming the exposure light in the gray scale portion is smaller than 100% (for example, 40 to 60%) a translucent film; and a photomask (fine pattern gray scale hood) having a gray scale portion, which has a light-shielding property or a semi-transparent fine pattern having an analytical limit or lower under exposure conditions, thereby reducing transmission [About the gray scale mask] Here, a gray scale mask to be inspected in the inspection apparatus of the photomask according to the present invention will be described. A liquid crystal display device having a TFT, that is, a TFT_LCD, is compared with a cathode ray officer ( CRT) is now widely used due to its advantages of being easy to be thinner and consumes less power. The TFT-LCD has a TFT substrate in which TFTs are arranged in a matrix arranged in a matrix, and corresponding to each pixel arrangement red (R) The color filter of the green (G) and blue (B) pixel patterns has a structure in which the liquid crystal layers are vertically overlapped with each other. The TFT-LCD described above has a large number of manufacturing steps and a TFT substrate. Made with 5 to 6 masks. Next, it is possible to manufacture a TFt substrate by using four masks. This method uses a gray scale mask having a light shielding portion, a light transmitting portion, and a gray scale portion, thereby reducing the number of hoods used. And Fig. 4 shows an example of a manufacturing process of a TFT substrate using a gray scale mask. First, as shown in Fig. 3(a), a metal film for a gate electrode is formed on the glass substrate 2?1. 'The gate electrode 202 is formed by a lithography imaging step using a photomask. Then, a gate insulating film 2〇3' is formed in order to form a first semiconductor 2130-9836-PF; Ahddub 30 200912521 film U-Si) 204, 2 a semiconductor film (N + a_Si) 2 〇 5, a source/drain metal film 206, and a positive type resist film 2 〇 7. Next, as shown in FIG. 3(b), the positive-type resist film 2〇7 is exposed by using a gray scale mask 1 having the light-shielding portion 1〇1, the light-transmitting portion 102, and the gray-scale portion 103. Development, the i-th photoresist pattern 2〇7A is formed. The i-th photoresist pattern 2〇7 8 covers the TFT channel portion, the source drain formation region, and the data line formation region, and the TFT channel portion formation region is thinner than the source/drain formation region. (Currently, as shown in FIG. 3(c), the first photoresist pattern 2A7A serves as a light shield to etch the source/drain metal film 2?6 and the second and ith semiconductor films 205 and 204. Next, as shown in FIG. 4(a), the photoresist pattern 207 is entirely reduced by oxygen ashing, and the thin photoresist film of the channel portion forming region is removed to form the second photoresist pattern 207B. As shown in (b) of the figure, the second photoresist pattern 2 0 7B serves as a light shield, and the source/drain metal film 2 〇6 is etched to form the source/drain electrodes 206A and 206B, and the second semiconductor film 2 is etched second. 5. After C., as shown in (c) of FIG. 4, the remaining second photoresist pattern 207ββ is used. The gray scale mask 100 used herein has a corresponding source/汲 as shown in FIG. The extreme light-shielding portions 101A, 101β, the light-transmitting portion 1〇2, and the gray-scale portion 103 corresponding to the tft channel portion. The gray-scale portion 1〇3 is an exposure condition of an exposure device for a large LCD using a gray scale mask 1〇〇. Next, a region formed by the light-shielding pattern 103A composed of fine patterns having a lower limit is analyzed. The light-shielding portions 1〇1Α, 1〇1β, and the light-shielding pattern 103A are usually made of chromium or chromium. A film of the same thickness composed of the same material is formed. The resolution limit of the exposure device using a large-scale lcd of the above gray scale mask is about 3# 2130-9836-PF/Ahddub 31 200912521 m in the stepwise exposure apparatus (:m), about 4" melon in the exposure apparatus of the mirror projection type. Therefore, the width of the transmission portion 103β and the line width of the light-shielding pattern 103Α in the ash white portion 1〇3 are the exposures of the exposure devices, respectively. For example, less than 3 #m below the analysis limit under the condition. The design of the gray pattern portion 1〇3 of the fine pattern type is used to have a semi-transparent relationship between the light-shielding portions 101A and 101B and the light-transmitting portion 1〇2. The fine pattern of the light (grayscale effect) has a line and pitch type, or is made as a dot (mesh) type, or as a choice of other patterns. x, if it is a line and a pitch type, What is the β-line width, the ratio of the light-transmissive portion to the light-shielding portion, and the degree of transmittance of the entire light, etc. The semi-transmissive film type gray scale mask can be manufactured, for example, as follows. Describe the pattern of the TFT substrate. This pattern, such as the third ( b) the gray scale 形成 formed by the pattern of the light-shielding portion 1 formed by the pattern of the source and the wave of the corresponding TFT substrate corresponding to the channel of the TFT substrate, and the light-transmitting portion 1 formed around the patterns 〇2 is composed of a blank hood in which a semi-transmissive film and a light-shielding film are sequentially formed on a transparent substrate, and a photoresist 形成 is formed on the blank hood. Secondly, pattern drawing is performed by imaging A photoresist pattern is formed in a region of the light-shielding portion and the gray-scale portion of the corresponding pattern. Secondly, the light-shielding film of the region corresponding to the light-transmitting portion where the photoresist pattern is not formed and the semi-transmissive film of the lower layer thereof are removed by etching by an appropriate method. Form a pattern. Therefore, the light transmitting portion 102 is formed, and at the same time, the light shielding portion 1?1 of the pattern is formed with the light shielding pattern of the region corresponding to the gray scale portion 103. Therefore, after removing the remaining photoresist pattern, a photoresist film is formed on the substrate, and a pattern cat drawing is performed, 32 2l30-9836-PF; Ahddub 200912521 is developed by the image in the region corresponding to the light-shielding portion 1〇1 of the pattern. Formation of photoresist pattern 0 Next, only a light-shielding film of a region where the gray scale portion of the photoresist pattern is not formed is removed by appropriate etching. Thereby, the gray scale portion 103 produced by the pattern of the semi-transmissive film is formed, and at the same time, the pattern of the light blocking portion 1〇1 is formed. [How to obtain information on gray-scale masks]

對於使用上述灰階光罩取得光罩資訊，在反映實際的曝光條件的條件下得到透射光圖案是有用的。灰階光罩中’在遮光罩上形成的圖案形狀，影響使用此遮光罩的曝光在被轉印體上形成的光阻膜厚及光阻膜的形狀。例如’不只是平面的圖案形狀的評#，還必須評估灰階部的光透射率Μ在適t的範_、灰階部與遮光部的界線的光透射量如何突出（清晰或暈化情況）。 …特別疋，如果是具有微細圖案所形成的灰階部的灰階光罩的情況下，使用光罩實際曝光時，不解析微細圖案，而當作實質上均-的透射率的程度在非解析狀態下使用。在遮光罩的製造過程中，或是出貨前的階段，更有必要在進行缺陷修正的階段中檢查此狀態。根據本發明的光罩資, %早貝讯之取侍方法中，藉由減低透射灰階部的曝光光的量，並斟卫減低對此區域的光阻的照射量，以近似實際的曝光條件，古拌干仟了以问積確度進行選擇性地改變光阻膜厚的灰階光罩檢杳，且可以离锫放& — J以回積確度預測以實際曝光得到的光罩圖案形狀。例如，第6圖顯示’改變曝光條件時，灰階光罩的透 33 2130-9836-PF;Ahddub 200912521 射光的透射光分佈。第6圖所示的圖案，顯示2遮光部（對應TFT中源極、汲極）、以及與2遮光部鄰接且在中央部設置的半透光部 (對應通道部）所構成的圖案。在此，中央的半透光部中，曝光機的改造界限由線寬下降的圖案（水平方向上，排列微細透光部-微細遮光部-微細透光部）形成。在此，更使用4階段不同解析度的光學系統，拍攝透射光圖案’愈向右，解析度愈低，帛6圖的下段顯示透射光圖案曲線的峰值變低。此部分的濃度顯示使用此灰階光罩時此部分的「實效透射率」，因此以灰階部形成的光阻膜的殘膜量受到影響。此4解像條件中，愈向右，愈近似實際曝光機的條件。因此，根據第6圖的下段所示的透射光圖案，可以掌握適用於灰階光罩的曝光的曝光條件、以及藉由曝光條件得到在被轉印體上的光阻圖案的形狀的相關性。又，上述實際的曝光條件下的非解析的狀態中得到攝影影像時，因必要經過適當的演算，評估通道部與源極、没極部之間的邊界部分的清晰度，也可以預測光阻的立體形狀。此時，第2圖中，例如具有解析界限以下的微細圖案構成的半透光部的光罩3,設置於檢查裝置中，例如，藉由對物鏡系統4的開口數及—致性σ成為與實際使用的曝光機近似的既定值，攝影裝置5内的攝影面中，與以實際曝光產生圖案轉印時相同，得到微細圖案的非解析狀態的 2130-9836-PF;Ahddub 34 200912521 影像。於是，拍攝的影像資料以演算部處理，#此可以得到遮光罩圖案的透射光圖案。從透射光圖案得到的透射光圖案-貝料可以成為本發明的光罩資訊的一部分。光罩資訊更可以包含對於光罩的半透光部的透射率的容許範圍的臨界值資訊。 [關於測試光罩] 根據本發明的光罩資訊中，曝光條件的變化（具有與圖案的線寬CD之間的相關關係），隨著半透光膜的固有透射率(依賴膜厚、膜質)的變化，可以包含半透光部的實效透射率的變化傾向。上述的資訊例如可以表現如帛】抑)圖的曲線。在此’既定的曝光條件（曝光量）等，對於半透光膜的固有透射率，&變圖案的線寬，敎對此的實效透射 f的依存性。第13(b)圖中分別以橫軸表示通道部（半透光部）的線寬，以縱軸表示實效透射率。又，n : 表示實遮光罩的圖案資料，T1±x%、T1±y%*別表示膜固有的透射率。 ^如上述，為了將光罩中使用的半透光膜的固有的透射率變化、圖案的形狀（線寬等）產生的實效透射率的變化傾向包含在光罩資訊内，如預先在第7圖中的一範例所示，使用測試光罩U，可以得到光透射圖案資料。例如可以使用下述之物作為本發明近似光罩的測試光罩。測試光罩11 ’依據圖案形狀變化，可以掌握實效透射率變化。使用模擬上述曝光機的曝光手段的光罩資訊取得方法中，依據複數的圖案形狀，用以準確、迅速得到透射 2130-9836-PF;Ahddub 35 200912521 光圖案。再加上，或，取而 “ 影部的光譜感度特性等 < 光阻膜的光譜感度、攝合的因子的條件，使用上關於包3不能與曝光機條件整用上迷測試光罩，對被鲑HP栌推〜光測試，制進行光阻于破轉印體進仃曝件下的光阻圖案形狀的傾向的話果掌握複數的條測試光罩U中，如匕在光罩資訊内。的基板上，相同的『式圖奎a圖所示，例如800_920mffi 排列成矩陣狀。各:二，呈有在X… 案12’如第7(b)圖所示，形成具有在X軸方向和¥軸方向上各排们列的單位圖宰=成剩餘的部分，可以配置適 ^ ® t 13〇夏遇田的其他測試圖案圖中的範例，在周圍部配置M 案例如’第7(b) 闽丨配置位置基準符號PM，在置一般解析度圖案Ph 、邛配本發明的測試圖案中，各安JSJ，^ 皁位圖案13可以是相同的圖案，C例如帛8圖所示，最的、分別不同的圖案。在迹的評估步驟中有用形圖案）在X軸方向排列、】13(楔在Y方向以g 案列13中，形狀私變化。即，各單位圖案歹" 向也好或Y方向冰拉分“，入方夂〜，#列順序根據-定的規則而變化。各早位圖案13由遮光腹來忐。+留， ^料成此皁位圖案13在第8(a) a〜u」顯示的γ軸方向 7Q , 見度鸣奴狀改變的夾的透光部Μ中，遮光膜所構成的圖荦13中it 間距的圖案。-個個的單位圖案13中，兩侧的一對遮光部叫’在第8⑷圖中〜21」所示的„ 轴方向上’疋相同的，而在中央的透光部 2l30-9836-PF；Ahddub 36 200912521 13~2形成的遮光線的線寬，在x軸方向上，往「丨〜21」，以一定的間距變細。又，各早位圖案13’也可以以遮光膜及半透光膜形成。此時，早位圖案13，夾在寬度階段變化的_對遮光部中，成為半透光膜形成的圖案。gp，半透光膜形成的區域，成為由一對平行的遮光部的邊緣所夾住的區域（半透光部）。藉由排列上述單位圖案13,如第8(b)圖所示，可以近似遮光部所夾的灰階部的透射率逐漸變大的光罩。例如，薄膜電晶體中的通道部形成用的灰階光罩令，可以近似逐漸變化灰階部的光透射率的狀態。另一方面，各單位圖案列13中，在γ方向上，附上 u」’兩側的遮光部的線寬逐漸變小。例如，薄膜電晶體中的通道部形成用的灰階光罩中，如第8(b)圖所示，可以近似通道部的寬度逐漸變大的狀態。又，在此，由於後述的理由，各單位圖案列13中的一對遮光部的線寬變化間距’最好等於中央的遮光線的線寬變化間距。另一方面，如此排列的單位圖案列1 3，經由斜方向的觀察、評估’可以評估上述遮光罩的線寬（CD(Cri1：ical Dimensi〇n(臨界範圍）））變動所產生對轉印至被轉印體的影響。例如「al、b2、c3…」的排列，還是以一定的規則變化圖案形狀，此規則為中央的遮光線以一定的間距變細的同時，兩側的遮光部的線寬也以一定的間距變細。可以近似光罩製造步驟中的因素等、種種的理由所產生的光罩的CD變動（線寬以既定量變大或以既定量變小）。 37 2l30-9836-PF；Ahddub 200912521 因此使用上述測S式光罩，實施根據本發明的光罩資訊之取得方法時，檢查裝置所得到的光強度分佈、與^ 同的測s式光罩進行曝光所得到的被轉寫體上的光阻圖案之間的相關性，可以在與各圖案形狀的變化間的關係中掌握。It is useful to obtain the transmitted light pattern under the condition that the actual exposure conditions are obtained by using the gray scale mask described above to obtain the mask information. The pattern shape formed on the hood in the gray scale mask affects the thickness of the photoresist film formed on the transfer target by the exposure of the hood and the shape of the photoresist film. For example, it is not only the evaluation of the planar pattern shape, but also the light transmittance of the gray-scale portion Μ, how the light transmission amount of the boundary of the gray-scale portion and the light-shielding portion is prominent (clear or hazy) ). ... In particular, in the case of a gray scale mask having a gray scale portion formed by a fine pattern, when the photomask is actually exposed, the fine pattern is not analyzed, and the degree of transmittance which is substantially uniform - is not Used in the parsing state. During the manufacturing process of the hood or during the pre-shipment phase, it is more necessary to check this status during the stage of defect correction. According to the photomask of the present invention, in the method of picking up the light, the amount of exposure light in the transmission gray scale portion is reduced, and the amount of exposure of the photoresist in this region is reduced to approximate the actual exposure. Under the condition that the guzzle is dry, the gray-scale reticle inspection for selectively changing the thickness of the photoresist film is performed, and the reticle pattern obtained by the actual exposure can be predicted from the & && shape. For example, Figure 6 shows the transmission light distribution of the gray-scale reticle of the gray-scale reticle when changing the exposure conditions; Ahddub 200912521. The pattern shown in Fig. 6 shows a pattern of two light-shielding portions (corresponding to the source and the drain of the TFT) and a semi-transmissive portion (corresponding channel portion) provided adjacent to the two light-shielding portions and provided at the center portion. Here, in the central semi-transmissive portion, the reforming limit of the exposure machine is formed by a pattern in which the line width is lowered (in the horizontal direction, the fine light transmitting portion is arranged - the fine light blocking portion - the fine light transmitting portion). Here, the optical system of the four-stage resolution is further used, and the higher the resolution of the transmitted light pattern is, the lower the resolution is, and the lower portion of the 帛6 pattern shows that the peak of the transmitted light pattern curve becomes lower. The concentration of this portion shows the "effective transmittance" of this portion when the gray scale mask is used, so the residual film amount of the photoresist film formed by the gray scale portion is affected. In this 4 resolution condition, the closer to the right, the closer the conditions of the actual exposure machine. Therefore, according to the transmitted light pattern shown in the lower stage of Fig. 6, it is possible to grasp the exposure conditions suitable for the exposure of the gray scale mask, and the correlation of the shape of the photoresist pattern on the object to be transferred by the exposure conditions. . Further, when a photographed image is obtained in an unanalyzed state under the above-described actual exposure conditions, it is necessary to perform an appropriate calculation to evaluate the sharpness of the boundary portion between the channel portion and the source and the non-polar portion, and it is also possible to predict the photoresist. The three-dimensional shape. In the second embodiment, for example, the mask 3 having the semi-transmissive portion formed of the fine pattern having the analysis limit or less is provided in the inspection device, for example, by the number of openings and the σ of the objective lens system 4 The predetermined value approximate to the exposure machine actually used is the same as that in the case where the pattern is transferred by the actual exposure in the image pickup surface in the photographing device 5, and the image of 2130-9836-PF in the non-analytical state of the fine pattern is obtained; Ahddub 34 200912521 image. Therefore, the captured image data is processed by the calculation unit, and the transmitted light pattern of the hood pattern can be obtained. The transmitted light pattern from the transmitted light pattern - batting can be part of the reticle information of the present invention. The mask information may further contain information on the margin value of the allowable range of the transmittance of the semi-transmissive portion of the reticle. [About test reticle] According to the reticle information of the present invention, the change in exposure conditions (having a correlation with the line width CD of the pattern), with the inherent transmittance of the semi-transmissive film (depending on film thickness, film quality) The change may include a tendency of a change in the effective transmittance of the semi-transmissive portion. The above information can be expressed, for example, as a curve of a graph. Here, the predetermined transmittance conditions (exposure amount) and the like, the intrinsic transmittance of the semi-transmissive film, the line width of the & variable pattern, and the dependence of the effective transmission f on this. In Fig. 13(b), the line width of the channel portion (semi-transmissive portion) is indicated by the horizontal axis, and the effective transmittance is indicated by the vertical axis. Further, n : indicates the pattern data of the real hood, and T1 ± x% and T1 ± y% * indicate the inherent transmittance of the film. ^ As described above, in order to change the specific transmittance of the semi-transmissive film used in the mask, the change in the effective transmittance due to the shape (line width, etc.) of the pattern is included in the mask information, as previously in the seventh As shown in an example in the figure, the light transmission pattern data can be obtained by using the test mask U. For example, the following can be used as the test reticle of the approximate reticle of the present invention. The test mask 11' changes in accordance with the shape of the pattern to grasp the change in the effective transmittance. The reticle information obtaining method using the exposure means for simulating the above exposure machine is used to accurately and quickly obtain a transmission pattern of 2130-9836-PF and Ahddub 35 200912521 according to a plurality of pattern shapes. In addition, or, in addition, the "spectral sensitivity characteristics of the shadow portion, etc., the spectral sensitivity of the photoresist film, and the factor of the factor of the photographing, the use of the test mask 3 cannot be used with the exposure machine condition. In the case of the 鲑栌栌光光光光光光光光光光光光光光光光光光光光光光光鲑鲑鲑鲑鲑鲑鲑鲑鲑鲑鲑鲑鲑鲑鲑On the substrate, the same "Figure quetia diagram" shows, for example, 800_920mffi arranged in a matrix. Each: two, presented in X... Case 12' as shown in Figure 7(b), formed on the X-axis The unit diagram of each row in the direction and the direction of the ¥ axis = the remaining part, you can configure the example in the other test pattern of the ^ ^ t 13〇 Xia Yutian, and configure the M case in the surrounding part, for example, '7 (b闽丨 Configuring the position reference symbol PM, in the general resolution pattern Ph, the test pattern of the present invention, each of the JSJ, ^ soap pattern 13 may be the same pattern, C, for example, shown in Figure 8, the most Different patterns. Useful patterns in the evaluation step of the trace) Directional arrangement,] 13 (Wedge in the Y direction in the case of the case 13, the shape changes privately. That is, each unit pattern 歹 " to the good or Y direction ice pull ", into the square ~, # column order according to - Each of the early patterns 13 is covered by a light-shielding belly. +Remaining, the material is formed into the soap pattern 13 in the γ-axis direction 7Q shown in the 8th (a) a~u". In the light-transmitting portion 改变 of the changed clip, the pattern of the it-pitch in the pattern 13 formed by the light-shielding film. - In the unit pattern 13 of each unit, the pair of light-shielding portions on both sides are called '21 in the 8th (4) figure. The line width of the shading line formed in the center of the light transmitting portion 2l30-9836-PF; Ahddub 36 200912521 13~2 is shown in the "axis direction", in the x-axis direction, to "丨~21" Further, each of the early patterns 13' may be formed of a light-shielding film and a semi-transmissive film. In this case, the early pattern 13 is sandwiched between the _ pair of light-shielding portions whose width changes. a pattern formed by a semi-transmissive film. gp, a region formed by a semi-transmissive film, which is a region sandwiched by edges of a pair of parallel light-shielding portions (semi-transmissive portion) By arranging the unit pattern 13 as described above, as shown in Fig. 8(b), it is possible to approximate the mask in which the transmittance of the gray scale portion sandwiched by the light shielding portion is gradually increased. For example, the channel portion in the thin film transistor is formed. The gray scale mask used can approximate the state in which the light transmittance of the gray scale portion is gradually changed. On the other hand, in each unit pattern row 13, the line of the light shielding portion on both sides of the u"' is attached in the γ direction. For example, in the gray scale mask for forming the channel portion in the thin film transistor, as shown in Fig. 8(b), the width of the channel portion can be approximated. Further, here, For the reason described later, the line width variation pitch ' of the pair of light shielding portions in each unit pattern row 13 is preferably equal to the line width variation pitch of the central light shielding line. On the other hand, the unit pattern row 13 thus arranged, through the observation and evaluation of the oblique direction, can evaluate the line width (CD (Cri1: ical Dimensi〇n)) of the hood to be transferred. To the influence of the transferred body. For example, the arrangement of "al, b2, c3..." changes the pattern shape with a certain rule. This rule is that the central shading line is tapered at a certain pitch, and the line widths of the shading portions on both sides are also spaced at a certain interval. Thinning. It is possible to approximate the CD variation of the reticle caused by various factors such as factors in the mask manufacturing step (the line width is increased in size or reduced in size). 37 2l30-9836-PF; Ahddub 200912521 Therefore, when the method for obtaining the reticle information according to the present invention is implemented by using the S-type reticle described above, the light intensity distribution obtained by the inspection device is performed with the same s-type reticle. The correlation between the photoresist patterns on the transferred body obtained by the exposure can be grasped in the relationship with the change in the shape of each pattern.

又，如第7圖中的（b)所示，單位圖案13，在測試光罩11中’在X方向及Y方向以9〇。的角度排列。可以評估電子裝置例如液晶面板，在製造時產生的χ方向及γ方向的圖案的解析度不均-主因。例如’ #光裝置的掃描方向及與此垂直的方向1，如果產生解析度上的差異的話，可以評估如此的解析度的差異狀態。又，此時，雖然說明測試光罩u作為單位圖案13 如第8(a)圖所示，寬度階段狀變化的一對遮光部13_丨所夾的透光部13-2中，具有配置遮光膜產生的遮光線的線和間距的圖f (楔形圖案），但本發明的測試光罩並不限於此。不同的測試圖案，如第9圖及第1〇圖所示，第9圖所示的測試圖案12’的單位圖帛13,纟有正方形框狀的透光部13-2’ 、及在此透光部透光部13_2, 框狀的遮光部13-1 ’一個單位圖案13 方向。内形成的正方形中，可以評估4 第ίο圖所示的測試圖案12”的單位圖案13”，具有正八角形的框狀的透光部i"，’、及在此透光部13_2”内形成的正八角形的框狀的遮光部丨3-1 ” ，一個單位圖案 13”中，可以評估8方向。 ' 2130-9836-PF/Ahddub 200912521 又’作為不同的形能楚· 第8⑷圖中測試圖案的寬度階段狀變化的一對逨#郫路+以反丨白止_ 對遮^所爽的部分中，形成半透光膜（對透光。卩減低既定量透射率為目 # 幻所又置的膜）’也可以作為箪位圖案。此時，使用此、、丨々㈣此測以罩’可以進行評估具有形成半透光膜的灰階部的灰階光罩。配置半透光膜的m製造用灰階遮光罩可以近似對應通道的部分。Further, as shown in (b) of Fig. 7, the unit pattern 13 is 9 在 in the X direction and the Y direction in the test mask 11. Arranged in perspective. It is possible to evaluate the resolution unevenness-main cause of the pattern of the x-ray direction and the gamma direction which are generated at the time of manufacture by an electronic device such as a liquid crystal panel. For example, the scanning direction of the optical device and the direction 1 perpendicular thereto can evaluate the difference state of such resolution if a difference in resolution is generated. In addition, in this case, the test mask u is described as the unit pattern 13 as shown in the eighth (a) diagram, and the light-transmitting portion 13-2 sandwiched between the pair of light-shielding portions 13_丨 having a stepwise change in width has a configuration. The figure f (wedge pattern) of the line and the pitch of the light-shielding line generated by the light-shielding film, but the test mask of the present invention is not limited thereto. Different test patterns, as shown in FIG. 9 and FIG. 1 , a unit diagram 13 of the test pattern 12 ′ shown in FIG. 9 , a square frame-shaped light transmitting portion 13 - 2 ′, and The light transmitting portion light transmitting portion 13_2 and the frame light blocking portion 13-1' are one unit pattern 13 direction. In the square formed inside, the unit pattern 13" of the test pattern 12" shown in FIG. 4 can be evaluated, and the frame-shaped light transmitting portion i", having a regular octagon shape, and the light transmitting portion 13_2" are formed therein. The positive octagonal frame-shaped shading 丨 3-1 ” , one unit pattern 13 ′′, can be evaluated in 8 directions. ' 2130-9836-PF/Ahddub 200912521 and 'as a different shape energy Chu · 8 (4) test The width of the pattern is changed in a stepwise manner. A pair of 逨#郫路+ 丨丨止 _ 对对对对对半半半半半半半半半半半半半半半半半半半半半半半半半半半半半The film ") can also be used as a clamp pattern. At this time, using this, 丨々(4), the cover can be used to evaluate a gray scale mask having a gray scale portion forming a semi-transmissive film. The gray scale hood for the m manufacturing of the light film can approximate the portion corresponding to the channel.

f -Lf -L

▲在此，根據本發明的光罩資訊之取得方法中，一面改變曝光條件，-面進行複數回的照射，最好得到各回照射產生的測試光罩的攝影影像。複數不同的條件所產生的測試光罩的透射光光強度分佈資料，提供與上述測試光罩由實際曝光所產生的光阻圖案間的比較對照，藉此可以得到更多的資訊。例如，一面以既定量改變開口數（NA), 一面進行照射，或者，以既定量改變開口數（NA)或一致性（σ )，一面進行照射等。以上述得到的透射光的光強度分佈資料，可以累積作為資料庫。此資料庫的一部分或全部可以作為光罩資訊。 [關於檢查光的光譜特性（丨）] 於是’作為此檢查裝置中的光源1(第2圖），相同於實際執行曝光的曝光裝置中的曝光光，又，最好使用發出具有略相等波長分佈的檢查光之光源。具體而言，此檢查光，如第11(a)圖所示，至少包含g 線（波長436nm(毫微米））、h線（405nm)、或i線（365nm) 其中任一，或是包含全部這些波長成分，或是可以是這些波長成分中任意2個以上混合的合成光。通常，FPD製造 2130-9836-PF;Ahddub 39 200912521 用的大型遮光罩曝光之際，因為使用這些波長的合成光作為曝光光，此檢查裝置t應用所希望的光強度比例中的合成光，藉此可以成為近似曝光條件的條件。於是，此檢查光，透過光學濾光器等的波長選擇濾光器6(第2圖），藉由照射至光罩3,調整光罩3上的各波長成分的混合比。如帛11(b)圖所示，可以使用具有切割既定波長以下或既定波長以上的光束的特性的濾光器，作為此波長選擇濾光器6。此檢查裝置中，藉由光源i所發出的檢查光的波長分佈與曝光裝置中曝光光的波長分佈相$，或是略相同，可以成為近似實際曝光條件的曝光條件。又此檢查裝置中，如帛n(c)圖所示，可以選擇使用具有只透射以光源1(第2圖）所發出的g線為主的特性的第1遽光器、具有只透射以光源1所發出的h線為主的特性的第2濾光器、以及具有只透射以光源1所發出的i 線為主的特性的第3濾光器，作為波長選擇滤光器。 ⑺此時’刀別求仔使用第i濾光器時以攝影部5(第2圖) :得到的光強度資料dg、使用第2濾光器時以攝影部5所 U的光強度貝料dh、使用第3據光器時以攝影部5所得到的光強度資料di、因此。各光強度資料dg、dh、di，分別進行既定的加權後，經由加法，可以算出以既定的光強度比混合§線、h 線及1線的光束照射在光罩3時得到的光強度資料。各光強度資料dg、dh、di的加權，例如，假設來自檢 2130-9836-PF;Ahddub 200912521 查裝置的光源1的光束中，g線、h線及i線的強度比率為 Π.00: 1.20: 1.30]，而來自實際曝光裝置的光源的曝光光中’ g線、h線及i線的強度比率為[j. 〇〇 : 〇. 95 : 15]。此時，光強度資料dg應乘的係數為〗.〇〇，光強度資料 dh應乘的係數fh為〇.95/12〇( = 〇. 79)，光強度資料心應乘的係數 fi 為 1. 15/1 _ 30( = 0. 88)。這些相加的資料，即[fgxdgHhxdh + fixdi]，為曝光裝置中曝光光照射在光罩3時所得到的光強度分佈的顯示資料。又，利用控制裝置作為演算裝置，可以藉由此控制裝置進行上述演算。根據此方法，可以得到近似實際曝光條件的曝光條件下的光罩的透射光圖案。 [關於檢查光的光譜特性（2)] 檢查裝置的光源1所發出的檢查光，即使具有不同於曝光裝置的曝光光的波長分佈，如下述，可以得到近似曝光裝置中的曝光狀態的透射光圖案。檢查裝置中’如上所述’可以選擇使用具有只透射以光源1所發出的g線為主的特性的第丨濾光器、具有只透射以光源1所發出的h線為主的特性的第2據光器、以及具有只透射以光源1所發㈣i線為主的特性的第3濾光器’作為波長選擇濾光器。 " 於是，使用測試光罩u(第7圖），如第12圖所示，求得使用第1濾光器時攝影部5(第2圖）所得到的第i美準光強度資料Ig、使用第2滤光器時攝影部5所得到的； 2基準光強度資# Ih、以及使用帛3濾光器時攝影裝置5 2l30-9836-PF;Ahddub 41 200912521 所得到的第3基準光強度資料H。這些基準光強度資料 Ig、Ih、I i係光源1的光譜分佈、攝影部5的光譜感度分佈、及各濾光器光譜透射率相乘的結果，更乘以檢查裝置中透射來自光源1的檢查光的各光學元件的光譜透射率的結果。 (▲ In the method of obtaining the reticle information according to the present invention, the exposure condition is changed, and the surface is irradiated in multiples, and it is preferable to obtain a photographic image of the test reticle generated by each illuminating. The transmitted light intensity distribution data of the test mask produced by a plurality of different conditions provides a comparison with the photoresist pattern produced by the actual exposure of the test mask, thereby obtaining more information. For example, the irradiation is performed while the number of openings (NA) is changed quantitatively, or the number of openings (NA) or the consistency (σ) is quantitatively changed. The light intensity distribution data of the transmitted light obtained as described above can be accumulated as a database. Some or all of this database can be used as a mask information. [About the spectral characteristics of the inspection light (丨)] Then, as the light source 1 (Fig. 2) in this inspection apparatus, the exposure light in the exposure apparatus which is the same as the exposure actually performed, and preferably, is emitted with a slightly equal wavelength. Distributed light source for inspection light. Specifically, the inspection light, as shown in FIG. 11(a), includes at least one of a g line (wavelength 436 nm (nanometer)), an h line (405 nm), or an i line (365 nm), or includes All of these wavelength components may be combined light of any two or more of these wavelength components. Usually, FPD manufactures 2130-9836-PF; when the large hood for Ahddub 39 200912521 is exposed, since the synthesized light of these wavelengths is used as the exposure light, the inspection device t applies the synthesized light in the desired light intensity ratio, This can be a condition for approximating the exposure conditions. Then, the inspection light is transmitted through the wavelength selective filter 6 (Fig. 2) of the optical filter or the like, and the mixture ratio of the respective wavelength components on the mask 3 is adjusted by irradiation to the mask 3. As shown in Fig. 11(b), a filter having a characteristic of cutting a light beam of a predetermined wavelength or lower or a predetermined wavelength or more can be used as the wavelength selection filter 6. In this inspection apparatus, the wavelength distribution of the inspection light emitted by the light source i is equal to or slightly the same as the wavelength distribution of the exposure light in the exposure apparatus, and can be an exposure condition approximate to the actual exposure condition. Further, in the inspection apparatus, as shown in 帛n(c), it is possible to selectively use a first illuminator having a characteristic of transmitting only the g line emitted from the light source 1 (Fig. 2), and having only transmission. The second filter having the characteristic of the h line emitted by the light source 1 and the third filter having the characteristic of transmitting only the i line emitted by the light source 1 serve as a wavelength selective filter. (7) At this time, when the i-th filter is used, the photographing unit 5 (Fig. 2): the obtained light intensity data dg, and when the second filter is used, the light intensity of the photographing unit 5 is used. Dh, the light intensity data di obtained by the photographing unit 5 when the third photodetector is used, therefore. Each of the light intensity data dg, dh, and di is subjected to a predetermined weighting, and the light intensity data obtained by mixing the light beams of the § line, the h line, and the first line with the predetermined light intensity ratio in the mask 3 can be calculated. . The weighting of each light intensity data dg, dh, and di, for example, assuming that the intensity ratio of the g-line, the h-line, and the i-line in the light beam of the light source 1 of the inspection device is 2130-9836-PF; Ahddub 200912521 is Π.00: 1.20: 1.30], and the intensity ratio of the 'g-line, h-line, and i-line in the exposure light from the light source of the actual exposure device is [j. 〇〇: 〇. 95: 15]. At this time, the coefficient of the light intensity data dg should be multiplied by 〇〇.〇〇, the coefficient fh of the light intensity data dh should be 〇.95/12〇 (= 〇. 79), and the coefficient fi of the light intensity data should be multiplied. 1. 15/1 _ 30 ( = 0. 88). The added data, i.e., [fgxdgHhxdh + fixdi], is a display of the light intensity distribution obtained when the exposure light is irradiated onto the reticle 3 in the exposure apparatus. Further, by using the control device as the calculation device, the above calculation can be performed by the control device. According to this method, the transmitted light pattern of the reticle under the exposure conditions of the actual exposure conditions can be obtained. [Regarding the spectral characteristics of the inspection light (2)] The inspection light emitted from the light source 1 of the inspection device, even if it has a wavelength distribution of the exposure light different from the exposure device, as described below, the transmitted light of the exposure state in the approximate exposure device can be obtained. pattern. In the inspection apparatus, 'as described above', it is possible to selectively use a second filter having a characteristic of transmitting only the g line emitted from the light source 1, and having a characteristic of transmitting only the h line emitted by the light source 1. 2 A light filter and a third filter 'having a characteristic of transmitting only the (four) i line emitted from the light source 1 as a wavelength selective filter. " Then, using the test mask u (Fig. 7), as shown in Fig. 12, the i-th quasi-light intensity data Ig obtained by the photographing unit 5 (Fig. 2) when the first filter is used is obtained. The second reference light obtained by the imaging unit 5 when using the second filter; 2 reference light intensity # Ih, and the third reference light obtained by the imaging device 5 2l30-9836-PF when using the 帛3 filter; Ahddub 41 200912521 Strength data H. The reference light intensity data Ig, Ih, I i, the spectral distribution of the light source 1, the spectral sensitivity distribution of the imaging unit 5, and the spectral transmittance of each filter are multiplied by the transmission device from the light source 1 The result of examining the spectral transmittance of each optical element of light. (

光源1的光譜分佈、攝影部5的光譜感度分佈及各光學元件的光譜透射率對於波長是不同的。因此，有的拍攝圖案，根據攝影中使用的各檢查光線、h線、i線）的波長不同，成為不同的圖案。其次’第1至第3的基準光強度資料ig、ih、u為互為相等的準位，先求出有關各基準強度資料Ig、Ih、Ii的第1至第3係數α、召、r。即，如第J 2圖所示，求出各係數α、Θr，使第i基準光強度資料Ig乘以第i係數 <2的結果、第2基準光強度資料Ih乘以第2係數冷的結果、和第3基準光強度資料Η乘以第3係數^的結果成為相：的準位。在此，所謂相等的準位’係例如各基準光強度資料Ig、Ih、Π的峰值強度互為相等。此檢查裝置中，預先求出使各基準光強度資料〖g、丨匕、 Π成為互等準位的第！至第3係數α、々、r，這些係數 α、々、r由使用檢查裝置的使用者掌握。光罩時’關於此光罩， 1光強度資料Jg，使光強度資料Jh，以及 3光強度資料Ji。於是，進行檢查關於檢查對象的使用第1》慮光益根據攝影部5求出第用第2濾光器根據攝影部5求出第2 使用第3濾光器根據攝影部5求出第 213〇-9836-PF;Ahddub 42 200912521 其次，藉由第1光強度資料Jg乘以第1係數α、第2 光強度資料Jh乘以第2係數冷、第3光強度資料ji乘以第3係數7 ’補正光源1的光譜分佈、攝影部5的光譜感度分佈及檢查裝置的各光學元件的光譜透射率產生的影響，求出使用上述光罩對被曝光體的光阻曝光時的曝光狀態對應的光強度資料[axJg，ySxJh，rxJi]。上述的演算，如上所述’使用控制裝置作為演算裝置，可以藉由此控制裝置進行。又，知道曝光裝置的光譜特性，即，曝光裝置光源的光譜分佈及曝光裝置的各光學元件的光譜透射率時，可以先決定對應這些光譜特性的係數u、V、W。例如，求出g 線的強度為1 · 0時的h線光強度（例如〇. 91 0 4 )及i線的光強度（例如1 _ 0 7 4 6)’可以使用這些合計為1的光強度比（例如，0.335: 0.305: 0.360)，作為係數 u、v、w。於是’對應這些曝光裝置的光譜特性的係數，對應並乘以第1至第3光強度資料，藉此可以更正確地求出經由曝光裝置使用上述光罩對光阻曝光時的曝光狀態所對應的光強度資料[uxaxJg，vx/SxJh，wxxxJi]。又’知道光阻的光譜感度特性（吸收光譜）時，可以先決定對應此光譜感度特性的係數X、y、Z。求出例如g線的吸收量為1. 〇時的h線的吸收量（例如1. 6571)以及i線的吸收量（例如k 8812) ’可以使用這些合計為1的吸收比 (例如，0.220 : 0.365 : 0.415)，作為係數 x、y、z。於是’對應此光譜特性的係數’對應並乘以第丨至第 2130-9836-PF；Ahddub 43 200912521The spectral distribution of the light source 1, the spectral sensitivity distribution of the imaging unit 5, and the spectral transmittance of each optical element are different for the wavelength. Therefore, some of the photographing patterns are different depending on the wavelengths of the respective inspection rays, h lines, and i-lines used in photographing. Next, the first to third reference light intensity data ig, ih, and u are mutually equal levels, and the first to third coefficients α, ZH, r are obtained first for each of the reference intensity data Ig, Ih, and Ii. . In other words, as shown in Fig. 2, the coefficients α and Θr are obtained, and the i-th reference light intensity data Ig is multiplied by the i-th coefficient <2, and the second reference light intensity data Ih is multiplied by the second coefficient. The result of the comparison with the third reference light intensity data Η multiplied by the third coefficient ^ becomes the level of the phase. Here, the "equal level" is, for example, the peak intensities of the respective reference light intensity data Ig, Ih, and Π are equal to each other. In this inspection apparatus, the reference light intensity data 〖g, 丨匕, Π are mutually obtained in advance! Up to the third coefficients α, 々, r, these coefficients α, 々, r are grasped by the user who uses the inspection device. When the reticle is on this reticle, 1 light intensity data Jg, light intensity data Jh, and 3 light intensity data Ji. Then, the inspection is performed on the object to be inspected. The second filter is obtained by the imaging unit 5, and the second filter is obtained by the imaging unit 5. The third filter is obtained by the imaging unit 5. 〇-9836-PF; Ahddub 42 200912521 Next, the first light intensity data Jg is multiplied by the first coefficient α, the second light intensity data Jh is multiplied by the second coefficient cold, and the third light intensity data ji is multiplied by the third coefficient 7' The influence of the spectral distribution of the correction light source 1, the spectral sensitivity distribution of the imaging unit 5, and the spectral transmittance of each optical element of the inspection apparatus, and the exposure state corresponding to the exposure of the photoresist to the exposed object using the mask. Light intensity data [axJg, ySxJh, rxJi]. As described above, the calculation using the control device as the calculation device can be performed by the control device. Further, when the spectral characteristics of the exposure apparatus, that is, the spectral distribution of the light source of the exposure apparatus and the spectral transmittance of each optical element of the exposure apparatus, the coefficients u, V, and W corresponding to these spectral characteristics can be determined first. For example, the light intensity of the h line when the intensity of the g line is 1 · 0 (for example, 91. 91 0 4 ) and the light intensity of the i line (for example, 1 _ 0 7 4 6) can be used. The intensity ratio (for example, 0.335: 0.305: 0.360) is taken as the coefficient u, v, w. Then, the coefficients corresponding to the spectral characteristics of the exposure devices are multiplied by the first to third light intensity data, whereby the exposure state when the photoresist is exposed to the photoresist by the exposure device can be more accurately determined. Light intensity data [uxaxJg, vx/SxJh, wxxxJi]. Further, when the spectral sensitivity characteristic (absorption spectrum) of the photoresist is known, the coefficients X, y, and Z corresponding to the spectral sensitivity characteristics can be determined first. For example, the absorption amount of the g-line is 1. The absorption amount of the h-line (for example, 1.571) and the absorption amount of the i-line (for example, k 8812) can be used as the absorption ratio of 1 (for example, 0.220). : 0.365 : 0.415), as the coefficients x, y, z. Then the 'corresponding coefficient of this spectral characteristic' corresponds and multiplied by the second to the second 2130-9836-PF; Ahddub 43 200912521

3光強度資料’藉此可以更正確地求出經由曝光裝置使用上述光罩對光阻曝光時的曝光狀態所對應的光強度資料[X xa xjg’ yx/3 xJh, ζχγ xJi](或是[xxux α xjg，yXvx^5 xjh， zxwx r x J l ])。使用控制部作為演算部，經由控制部也可以執行上述的演算。 [根據本發明的光罩之品質顯示方法] 根據本發明的光罩之品質顯示方法，對應如上述取得的光罩資訊至對應此光罩資訊的光罩。對應之際，光罩及光罩資訊中’可以以可認識的形態附加上述光罩固有的識別資訊。此光罩資訊之品質顯示方法中，有關各光罩，由於可以對應光罩資訊，當使用此光罩以曝光裝置進行曝光之時，如上述，可以適當設定曝光條件，還可以適當設定曝光後的光阻顯像條件、飫刻條件等。 [根據本發明的電子裝置之製造支援方法] 根據本發明的電子裝置之製造支援方法，如第13(a) 圖所示，藉由先對應如上述取得的光罩資訊至對應此光罩資訊的光罩，支援使用此光罩的電子裝置的製造。第13 (a)圖中顯示一範例。電子裝置之製造支援方法中，步驟1中，準備光罩的圖案資料（CAD資料），步驟2 中，根據此圖案資料進行光罩的製造。步驟3中，進行製 ie的光罩的元工評估。到此為止，係通常的遮光罩製造過程。於是，使用如第2圖所示的硬體模擬器作為檢查裝置，確上述遮光罩的性能，此時，發明者在先前提出採用近 2130-9836-PF；Ahddub 44 200912521 似實際的遮光罩的曝光條件的條件。於是，確認遮光罩性能後’再出貨。 ^另一方面，本發明中，預先取得光罩資訊，上述光罩資訊在與光罩相關聯的狀態下，提供給使用者，藉此，支援使用光罩的光罩使用者製造電子裝置的過程。 f3 Light intensity data 'This makes it possible to more accurately determine the light intensity data [X xa xjg' yx/3 xJh, ζχγ xJi] corresponding to the exposure state when the mask is exposed to the photoresist by the exposure device (or [xxux α xjg, yXvx^5 xjh, zxwx rx J l ]). The control unit can be used as an arithmetic unit, and the above-described calculation can be executed via the control unit. [Quality display method of photomask according to the present invention] According to the quality display method of the photomask of the present invention, the mask information obtained as described above corresponds to the mask corresponding to the mask information. Correspondingly, in the mask and mask information, the identification information inherent to the mask can be added in an identifiable manner. In the quality display method of the reticle information, since the reticle can correspond to the reticle information, when the reticle is used for exposure by the exposure device, as described above, the exposure condition can be appropriately set, and the exposure can be appropriately set. The photoresist development conditions, engraving conditions, and the like. [Manufacturing Support Method of Electronic Device According to the Present Invention] According to the manufacturing support method of the electronic device of the present invention, as shown in Fig. 13(a), the mask information obtained as described above is first matched to the corresponding mask information. The reticle supports the manufacture of electronic devices using the reticle. An example is shown in Figure 13 (a). In the manufacturing support method of the electronic device, in step 1, the pattern data (CAD data) of the photomask is prepared, and in step 2, the mask is manufactured based on the pattern data. In step 3, the component evaluation of the mask of the mask is performed. So far, it is a normal hood manufacturing process. Therefore, using the hardware simulator as shown in Fig. 2 as the inspection device, the performance of the above hood is confirmed. At this time, the inventors have previously proposed the use of the nearly opaque hood of the near 2130-9836-PF; Ahddub 44 200912521. The conditions of the exposure conditions. Then, after confirming the performance of the hood, it is re-shipped. On the other hand, in the present invention, the reticle information is obtained in advance, and the reticle information is provided to the user in a state associated with the reticle, thereby supporting the reticle user using the reticle to manufacture the electronic device. process. f

取得光罩資訊之際，例如，第13(3)圖的步驟4中，先作成測試光罩。此測試光罩的作成，係參考上述光罩的圖案，且包含近似的圖案以模擬上述光罩的曝光的同時，進行包含複數線寬的半透光部等的設計。步驟5令，使用上述的檢查裝置（模擬器），應用近似上述光罩的實際的曝光條件的條件，得到光罩的透射光的透射光圖案。最好得到適用複數的曝光條件時的透射光圖案。於是，根據上述透射光圖案，產生透射光圖案資料。在此’用以得到透射光圖案資料而使用的光罩，除了測。式光罩，當然可以是上述光罩本身。但只有此資訊的情兄下不此掌握半透光部的線寬變化所產生的透射光圓案資料的變化。步驟6中，對應製造的光罩與對應此光罩的光罩資孔送至電子裝置的製造過程，或是提供給參與電子裝置的製造過程的使用者。如上述的本發明中，在與上述光罩相關連的狀態下，猎由提供上述透射光圖案資料，光罩使用者可以預測此光罩在供曝光時所得到的光阻圖案，還可以決定適用於曝光的曝光條件。 45 2l30-9836-PF;Ahddub 200912521 此電子裝置之製造支援方法中，有關各光罩，因為對應光罩資訊’冑用此光罩以曝光裝置曝生進行曝光時，如上述’可以適當設定曝光條件，還可以適#設定曝光後的光阻的顯像條件、蝕刻條件。又，光罩的製造、以及使用此光罩的電子敦置的製造即使由不同的製造者執行時，藉由光罩製造者實施根據本發明的電子裝置的製造支援方法，電子裝置的製造者使用光罩製造者交貨的光罩以曝光裝置進行曝光之時，如上所述，也可以適當設定曝光條件，還可以適當設定曝光後的光阻的顯像條件、偏彳條件等，所以可以準確執行電子裝置的製造。 ^ [電子裝置之製造方法] 當製造液晶顯示裝置等的電子裝置時，一般眾所皆知的製造過程中’藉由使用根據上述本發明的光罩資訊，可以適當決定曝光條件，還可以預測曝光得到的光阻圖案。因此，可以迅速製造良好的電子裝置（液晶顯示裝置等）。因此，可以良率佳且在短期間内穩定得到對於電子裳置所希望的性能。、 [光罩製品] 本發明還適用於包含根據本發明的光罩資訊之取得方法所產生的光罩資訊以及上述光罩的所有光罩製品。【圖式簡單說明】 [第1圖]用以說明一對平行的遮光部的邊緣所夾的半 2130-9836-PF;Ahddub 46 200912521 透光部的中心的實效透射率。 [第2圖]顯示根據本發明的光罩資訊之取得方法中蚀用的檢查震置結構的側面圖。 &中使 [第3(a)〜（c)圖]顯示使用灰階光造步驟（前半）的。的製、[第广:)〜(C)圖]顯示使用灰階光罩的TFT基板的製造步驟（後半）的剖面圖。 [第5圖]係顯示灰階光罩結構的平面圖。 [第6圖]係顯示第的攝弟Ζ圖所不的檢查裝置中所得到影資料中的灰階部狀態圖。 [第7(a)、（b)圖]係顯示根據本發明的光罩資訊之取得方法中使用的測試光罩的結構平面圖。 [第。（a) (b)圖]係顯示第7(a)、⑻圖所示的測試光罩中的單位圖案平面圖。When the mask information is obtained, for example, in step 4 of Fig. 13 (3), a test mask is first formed. The test reticle is formed by referring to the pattern of the reticle and including an approximate pattern to simulate exposure of the reticle, and designing a semi-transmissive portion including a plurality of line widths. Step 5: Using the above-described inspection apparatus (simulator), a condition of approximating the actual exposure conditions of the reticle is applied to obtain a transmitted light pattern of transmitted light of the reticle. It is preferable to obtain a transmitted light pattern when a plurality of exposure conditions are applied. Thus, according to the above transmitted light pattern, transmitted light pattern data is generated. Here, the reticle used to obtain the transmitted light pattern material is measured. The reticle can of course be the reticle itself. However, only the brother of this information does not grasp the change in the transmitted light round data generated by the change in the line width of the semi-transmissive portion. In step 6, the corresponding reticle and the reticle corresponding to the reticle are sent to the manufacturing process of the electronic device or to the user participating in the manufacturing process of the electronic device. In the above invention, in the state associated with the reticle, the hunter can provide the light-transmitting pattern data, and the reticle user can predict the photoresist pattern obtained by the reticle for exposure, and can also determine Exposure conditions for exposure. 45 2l30-9836-PF; Ahddub 200912521 In the manufacturing support method of the electronic device, as for the respective masks, because the mask information is used, when the mask is exposed to the exposure device, the exposure can be appropriately set as described above. Conditions, it is also possible to set the development conditions and etching conditions of the photoresist after exposure. Moreover, the manufacture of the photomask and the manufacture of the electronic device using the photomask are performed by a different manufacturer, and the manufacturer of the electronic device is manufactured by the photomask manufacturer to perform the manufacturing support method of the electronic device according to the present invention. When exposure is performed by the exposure apparatus using the mask delivered by the mask manufacturer, as described above, the exposure conditions can be appropriately set, and the development conditions and the hemiplesis conditions of the photoresist after the exposure can be appropriately set, so that Accurate execution of the manufacture of electronic devices. ^ [Manufacturing Method of Electronic Device] When manufacturing an electronic device such as a liquid crystal display device, it is generally known that in the manufacturing process, by using the photomask information according to the present invention described above, the exposure conditions can be appropriately determined, and prediction can be made. The resulting photoresist pattern is exposed. Therefore, a good electronic device (liquid crystal display device or the like) can be quickly manufactured. Therefore, the desired performance can be obtained stably for a short period of time and stably obtained for a short period of time. [Photomask article] The present invention is also applicable to reticle information generated by the method of obtaining reticle information according to the present invention, and all reticle products of the reticle. [Simple diagram of the drawing] [Fig. 1] is used to illustrate the half of the pair of parallel shading portions, 2130-9836-PF; Ahddub 46 200912521 The effective transmittance of the center of the light transmitting portion. [Fig. 2] A side view showing an inspection striking structure which is etched in the method of obtaining reticle information according to the present invention. & [Mt. 3(a) to (c)] shows the use of the gray scale photolithography step (first half). The system, [the wide:) to (C)] is a cross-sectional view showing a manufacturing step (second half) of a TFT substrate using a gray scale mask. [Fig. 5] is a plan view showing the structure of the gray scale reticle. [Fig. 6] is a state diagram of the gray scale portion in the image data obtained in the inspection apparatus which is not shown in the first photograph. [Fig. 7(a), (b)] is a plan view showing the structure of a test reticle used in the method of obtaining reticle information according to the present invention. [No. (a) (b) Figure] shows a plan view of the unit pattern in the test mask shown in Figures 7(a) and (8).

时[第9圖]係顯示帛7(a)、⑻圖所示的測試光罩中的單位圖案的其他範例的平面圖。 m [第1〇圖]係顯示第7(小⑻圖所示的測試光罩中的單位圖案的又其他範例的平面圖。 [第11(a)圖]係顯示第2圖所示的光罩的檢查裝置中的光源的光譜特性的曲線圖。 [第11(b)圖]係顯示第2圖所示的光罩的檢查裝置中使用的波長選擇濾光器的光譜特性的曲線圖。 [第11(c)圖]係顯示第2圖所示的光罩的檢查裝置中使用的波長選擇濾光器的光譜特性的其他範例曲線圖。 2130-9836-PF;Ahddub 47 200912521 [第12圖]係顯示第2圖所示的光罩的檢查裝置中的光源的光譜特性、檢查裝置中構成攝影部的攝影元件的光譜感度分#、及檢查裝置中對應各濾光器所得到的基準光強度貝料的曲線圖’以及各基準光強度資料乘以對應的係數的狀態曲線圖。 [第13(a)圖]係顯示根據本發明的電子裝置之製造支援方法中的步驟流程圖。 [第13(b)圖]係_ 13(a)圖中的曲線的放大圖。【主要元件符號說明】 1〜光源·， 101〜遮光部； 10 2〜透光部； 103A〜遮光圖案； 100〜灰階光罩； 101A、101B〜遮光部； 10 3〜灰階部； 103B〜透射部； 11〜測試遮光罩； 12〜測試圖案； 12，〜測試圖案， 12”〜測試圖案； 13〜單位圖案； 1 3 ’’〜單位圖案； 1 3 ’〜單位圖案； 1 3 -1〜遮光部； 13 - Γ〜遮光部； 13 -1”〜遮光部； 13 - 2〜透光部； 13 - 2 ’’〜透光部； 1 3 - 2 ’〜透光部； 2〜照明光學系統； 201〜玻璃基板； 202〜閘極電極； 2 0 3〜閘極絕緣膜； 204〜第1半導體膜； 205〜第2半導體膜； 2 0 6〜源極/汲極用金屬 2130-9836-PF;Ahddub 48 200912521 207〜正型光阻膜； 207A〜第1光阻圖案； 2-1〜開口光圈機構； 3〜光罩； 4〜對物鏡系統； 4a〜第1群（模擬鏡）； 5〜攝影部（攝影裝置）； HP〜半透光部； HP〜半透光部； PM〜位置基準符號； PP〜一般解析度圖案；〜源極/汲極； 20 7B〜第2光阻圖案； 2-2〜視野光圈； 3a〜光罩維持部； 4-1〜開口光圈機構； 4b〜第2群（成像鏡）， δ〜波長選擇濾光器； g線、h線、i線〜檢查光 NA〜開口數； PM〜位置基準符號； SP1、SP2〜遮光部； SP1、SP2〜遮光部； T1 . Ref〜貫遮光罩的圖案資料； Tl±x%、Tl±y%〜膜固有的透射率 2130-9836-PF/Ahddub 49[Fig. 9] is a plan view showing another example of the unit pattern in the test mask shown in Figs. 7(a) and (8). m [Fig. 1] is a plan view showing still another example of the unit pattern in the test mask shown in Fig. 7 (Fig. 11(a)] showing the mask shown in Fig. 2 A graph of the spectral characteristics of the light source in the inspection apparatus. [Fig. 11(b)] is a graph showing the spectral characteristics of the wavelength selective filter used in the inspection apparatus for the mask shown in Fig. 2. Fig. 11(c) is a diagram showing another example of the spectral characteristics of the wavelength selective filter used in the inspection apparatus for the mask shown in Fig. 2. 2130-9836-PF; Ahddub 47 200912521 [Fig. 12] The spectral characteristics of the light source in the inspection apparatus of the mask shown in Fig. 2, the spectral sensitivity score of the imaging element constituting the imaging unit in the inspection apparatus, and the reference light obtained by the respective filters in the inspection apparatus are displayed. A graph of the intensity of the billet and a state graph of the respective reference light intensity data multiplied by the corresponding coefficient. [Fig. 13 (a)] is a flow chart showing the steps in the manufacturing support method of the electronic device according to the present invention. Fig. 13(b)] is an enlarged view of the curve in the figure _ 13(a). 】 1 ~ light source ·, 101 ~ light blocking part; 10 2 ~ light transmitting part; 103A ~ light blocking pattern; 100 ~ gray scale mask; 101A, 101B ~ light blocking part; 10 3 ~ gray scale part; 103B ~ transmission part; ~ test hood; 12 ~ test pattern; 12, ~ test pattern, 12" ~ test pattern; 13 ~ unit pattern; 1 3 '' ~ unit pattern; 1 3 ' ~ unit pattern; 1 3 -1 ~ shade; 13 - Γ ~ shading portion; 13 -1" ~ shading portion; 13 - 2 ~ light transmitting portion; 13 - 2 '' ~ light transmitting portion; 1 3 - 2 '~ light transmitting portion; 2 ~ lighting optical system; ~ glass substrate; 202 ~ gate electrode; 2 0 3 ~ gate insulating film; 204 ~ 1st semiconductor film; 205 ~ 2nd semiconductor film; 2 0 6 ~ source / drain metal 2130-9836-PF; Ahddub 48 200912521 207~ positive resist film; 207A~1st resist pattern; 2-1~open aperture mechanism; 3~mask; 4~to objective lens system; 4a~1st group (analog mirror); 5~ Photographic department (photographic device); HP ~ semi-transparent portion; HP ~ semi-transmissive portion; PM ~ position reference symbol; PP ~ general resolution pattern; Pole / bungee; 20 7B ~ 2nd photoresist pattern; 2-2 ~ field of view aperture; 3a ~ mask maintenance part; 4-1 ~ aperture mechanism; 4b ~ 2 group (imaging mirror), δ ~ wavelength selection Filter; g line, h line, i line ~ check light NA ~ number of openings; PM ~ position reference symbol; SP1, SP2 ~ light blocking part; SP1, SP2 ~ light blocking part; T1. Ref ~ pattern of hood ; Tl ± x%, Tl ± y% ~ film inherent transmittance 2130-9836-PF / Ahddub 49

Claims

200912521 十、申請專利範圍： 1. 一種光罩資訊之取得方法， a 蝕刻加工的被加工形成的光阻膜，使用具有遮光部、透光部、及半透光部所形成的既定轉印圖案的光行曝光，上述光阻膜變成具有上述=的：光條件下進 ^, 兩上这蝕刻加工中成為遮光罩的光阻殘膜量不同的部位Μ 的上述光罩的資訊，上述方法包括#取传關於其中使用、使用近似上述既定的曝光條件的曝光條件，對上述光罩或近似上述光罩的測試光罩進行曝光. 圖案經由攝影裝置取得上述光罩或:述測試光罩的透射光安f生光罩資訊’包含根據取得的透射光圖案的透射光圖案資料；以及對應上述光罩資訊至上述光罩。法 ^申請專利範圍第1項所述的光罩資訊之取得方其中’上述被加工層孩佶用贋货使用於液晶顯示裝置製造。法 ^申請專利範圍第1項所述的光罩資訊之取得方 ”中，上述透光部的曝光光透射率為刪時，上述丰透光部具有在透明基板上形成光膜的部分。 &成既疋透射率未滿職的半透 =申請專利範圍第1項所述的光罩資訊之取得方法上述半透光部在透明基板上，具有上述既定的 ^條件下形成解析界限以下的尺寸的微細遮光圖案^ 2l30-9836-PF；Ahddub 50 200912521 5. 如申請專利範圍第3或4項所述的光罩資訊之取得方法’其中’上述光罩資訊包含對於曝光條件變化的有關上述半透光部的曝光光透射率的變化傾向的資訊。 6. 如申請專利範圍第3項所述的光罩資訊之取得方法’其中’上述光罩在半透光部中具有半透光膜，上述光罩資訊包含對於上述半透光的膜厚或膜質變化的上述半透光部的曝光光透射率的變化傾向的資訊。 ( 7.如申請專利範圍第3或4項所述的光罩資訊之取得方法’其中，上述光罩資訊包含對於圖案線寬的變化的有關上述半透光部的曝光光透射率的變化傾向的資訊。 8. —種光罩之品質顯示方法，對於钕刻加工的被加工層上形成的光阻膜，使用具有遮光部、透光部、及半透光部所形成的既定轉印圖案的光罩，在既定的曝光條件下進行曝光’上述光阻膜變成具有上述蝕刻加工中成為遮光罩的光阻殘膜量不同的部位的光阻圖案，顯示其中使用的上 {：) 述光罩的品質，上述方法包括：使用近似上述既定的曝光條件的曝光條件，對上述光罩或近似上述光罩的測試光罩進行曝光，經由攝影裝置取知·上述光罩或上述測試光罩的透射光圖案，產生包含根據取得的透射光圖案的透射光圖案資料的光罩資訊的步驟；以及對應上述光罩資訊至上述光罩的步驟。 9·如申請專利範圍第8項所述的光罩之品質顯示方法，其中，上述被加工層係使用於液晶顯示裝置製造。 2130-9836^pf；Ahddub 51 200912521 10·如申請專利範圍第8項所述的光罩之品質顯示方法’其中’上述透光部的曝光光透射率為100%時，上述半透光部具有在透明基板上形成既定透射率未滿10 0%的半透光膜的部分。 11. 如申請專利範圍第8項所述的光罩之品質顯示方法其中’上述半透光部在透明基板上，具有上述既定的曝光條件下形成解析界限以下的尺寸的微細遮光圖案的部分。 12. 如申請專利範圍第1 〇或丨丨項所述的光罩之品質顯示方法，其中，上述光罩資訊包含對於曝光條件的變化的有關上述半透光部的曝光光透射率的變化傾向的資訊。 13. 如申請專利範圍第1 〇項所述的光罩之品質顯示方法，其中，上述光罩在半透光部令具有半透光膜，上述光罩資訊包含對於上述半透光的膜厚或膜質變化的有關上述半透光部的曝光光透射率的變化傾向的資訊。 14. 如申請專利範圍第丨0或丨丨項所述的光罩之品質顯不方法，其中，上述光罩資訊包含對於圖案線寬的變化的有關上述半透光部的曝光光透射率的變化傾向的資訊。 15. —種電子裝置之製造支援方法，對於蝕刻加工的被加工層上形成的光阻膜，使用具有遮光部、透光部、及半透光部所形成的既定轉印圖案的光罩，在既定的曝光條件下進行曝光，包含上述光阻膜變成具有上述蝕刻加工中成為遮光罩的光阻殘膜量不同的部位的光阻圖案之步驟，支援電子裝置製造的電子裝置，上述方法包括： 2130-9836-PF;Ahddub 52 200912521 使用近似上述既定的曝光條件的曝光條件，對上述光 :或近似上述光罩的測試光罩進行曝光，'經由攝影裝置取付^述光罩或上述測試光罩的透射光圖案，產生包含根據取得的透射光圖案的透射光圖案資料的光罩資訊的步驟；以及對應上述光罩資訊至上述光罩的步驟。200912521 X. Patent application scope: 1. A method for obtaining reticle information, a etched processed photoresist film, using a predetermined transfer pattern formed by a light shielding portion, a light transmitting portion, and a semi-light transmitting portion In the light exposure, the photoresist film has the information of the photomask under the light condition of the above-mentioned =0, and the reticle having the difference in the amount of the residual photoresist of the hood during the etching process, the method includes #取传。 The exposure mask of the reticle or the reticle is exposed to an exposure condition in which the exposure condition is used, and the reticle or the transmission of the test reticle is obtained by the photographic device. The light-receiving reticle information 'containing transmitted light pattern data according to the obtained transmitted light pattern; and corresponding to the reticle information to the reticle. The method of obtaining the reticle information described in the first paragraph of the patent application is in which the above-mentioned processed layer is used for the manufacture of a liquid crystal display device. In the method of obtaining the mask information according to the first aspect of the invention, the light transmittance of the light transmitting portion is cut, and the light transmitting portion has a portion where a light film is formed on the transparent substrate. The method of obtaining the reticle information according to the first aspect of the invention, wherein the semi-transmissive portion has a resolution limit or less on the transparent substrate under the predetermined conditions. The size of the fine light-shielding pattern ^ 2l30-9836-PF; Ahddub 50 200912521 5. The method of obtaining the mask information as described in claim 3 or 4, wherein the above-mentioned mask information includes the above-mentioned changes in exposure conditions 6. The method of obtaining the reticle information of the semi-transmissive portion, wherein the reticle has a semi-transparent film in the semi-transmissive portion. The reticle information includes information on a tendency of change in exposure light transmittance of the semi-transmissive portion of the semi-transmissive film thickness or film quality. (7) The light according to claim 3 or 4 cover In the method of obtaining information, the mask information includes information on a change tendency of the exposure light transmittance of the semi-transmissive portion with respect to a change in the line width of the pattern. 8. A method for displaying the quality of the mask, for engraving The photoresist film formed on the processed layer is exposed to light under a predetermined exposure condition using a mask having a light-shielding portion, a light-transmitting portion, and a predetermined transfer pattern formed by the semi-transmissive portion. A photoresist pattern having a portion having a different amount of residual photoresist as a hood in the etching process, and displaying the quality of the upper {:) reticle used therein, the method comprising: using an exposure that approximates the predetermined exposure condition And exposing the photomask or the test mask corresponding to the photomask to a light-transmitting pattern of the photomask or the test mask, and generating a transmitted light pattern data according to the obtained transmitted light pattern. a step of reticle information; and a step of corresponding to the reticle information to the reticle. 9. The reticle of claim 8 The quality display method, wherein the processed layer is used in the manufacture of a liquid crystal display device. 2130-9836^pf; Ahddub 51 200912521 10: The quality display method of the photomask according to claim 8 of the patent application When the exposure light transmittance of the light portion is 100%, the semi-transmissive portion has a portion in which a semi-transmissive film having a predetermined transmittance of less than 100% is formed on the transparent substrate. 11. As described in claim 8 In the quality display method of the photomask, the semi-transmissive portion has a portion of the fine light-shielding pattern having a size equal to or less than the analysis limit under the predetermined exposure conditions on the transparent substrate. 12. The scope of the patent application is 第1丨The method of displaying a quality of a photomask according to the above aspect, wherein the mask information includes information on a change tendency of exposure light transmittance of the semi-transmissive portion with respect to a change in exposure conditions. 13. The method according to claim 1, wherein the reticle has a semi-transmissive film in the semi-transmissive portion, and the reticle information includes a film thickness for the semi-transmissive light. Or information on the change tendency of the exposure light transmittance of the semi-transmissive portion of the film quality. 14. The method according to claim 2, wherein the reticle information comprises an exposure light transmittance of the semi-transmissive portion for a change in a line width of the pattern. Information about changing trends. 15. A method of manufacturing an electronic device, wherein a mask having a predetermined transfer pattern formed by a light shielding portion, a light transmitting portion, and a semi-light transmitting portion is used for a photoresist film formed on a processed layer to be processed. The step of performing exposure under predetermined exposure conditions includes a step of forming a photoresist pattern having a portion of the photoresist having a different amount of residual photoresist in the etching process, and supporting the electronic device manufactured by the electronic device, wherein the method includes : 2130-9836-PF; Ahddub 52 200912521 Exposing the above-mentioned light: or the test mask of the above-mentioned reticle using an exposure condition approximate to the above-mentioned predetermined exposure conditions, 'receiving the reticle or the above test light via the photographic device The transmitted light pattern of the cover generates a step of reticle information including the transmitted light pattern data according to the obtained transmitted light pattern; and a step of corresponding to the reticle information to the reticle.

16_如申明專利範圍第15項所述的電子裝置之製造支援方法’其中，上述電子裝置係液晶顯示裝置。 < 17.如中請專利範圍帛15項所述的電子裝置之製造支援方法，其中，上述透光部的曝光光透射率為im時，上述半透光部具有在透明基板上形成既定透㈣未滿函的半透光膜的部分。 <18.如申請專利範圍第15項所述的電子裝置之製造支援方法，#中，上述半透光部在透明基板上，具有上述既疋的曝光條件下形成解析界限以下的尺寸的微細遮光圖案的部分。 19.-種電子裝置之製造方法’對於蝕刻加工的被加工層上形成的光阻膜，使用具有遮光部、透光部、及半透光部所形成的既定轉印圖索的水g . — 圖案的先罩’在既定的曝光條件下進 :曝光’包含上述光阻膜變成具有上述蝕刻加工中成為遮光罩的光阻殘膜量不同的部位的光阻圖案法包括：根據上述申請專利範圍第的光罩資訊，決定曝光條件， 1項中所述的取得方法產根據上述決定的曝光條件生 213〇-9836-PF;Ahddub 53 200912521 對上述光罩進行曝光的步驟。 20.如申請專利範圍第]9 法，其令，根據上述光罩警^所述的電子裝置之製造方〜手貧訊，決定或上述蝕刻加工的蝕刻條件。、述光阻的顯像條件、 21.—種光罩製品，的取得方法之光罩、據申明專利範圍乎頁訊、及上述光罩。項所述 2130-9836-PF；Ahddub 54The manufacturing method of the electronic device according to the fifteenth aspect of the invention, wherein the electronic device is a liquid crystal display device. The method of manufacturing an electronic device according to the above aspect of the invention, wherein the semi-transmissive portion has a predetermined transparent surface on the transparent substrate. (4) The part of the semi-transparent film that is not full. In the above-mentioned semi-transmissive portion, on the transparent substrate, the semi-transmissive portion has a size which is equal to or smaller than the analysis limit under the exposure conditions described above. Part of the shading pattern. 19. Method of Manufacturing Electronic Device A water g having a predetermined transfer pattern formed by a light shielding portion, a light transmitting portion, and a semi-light transmitting portion is used for a photoresist film formed on a processed layer to be processed. — The mask of the pattern ′ is carried out under predetermined exposure conditions: the photoresist pattern method including the above-mentioned photoresist film having a portion having a different amount of photoresist remaining as a hood in the etching process includes: The reticle information of the range determines the exposure condition, and the acquisition method described in the item 1 produces 213〇-9836-PF according to the exposure condition determined above; Ahddub 53 200912521 exposes the reticle. 20. The method of claim 9, wherein the etching condition of the etching process is determined according to the manufacturing method of the electronic device described above. The development conditions of the photoresist, the reticle of the reticle product, the method of obtaining the refractory, the clarification of the patent range, and the reticle. Item 2130-9836-PF; Ahddub 54