200845287 九、發明說明： 【發明所屬之技術領域】 本發明係有關吸附、保持基板 之電襞處理裝置。 頭’及具備其 【先前技術】 :亥靜電夾頭，例如設置於使既定處理氣體電渡化而將 一夕乂反予以姓刻之餘刻裝置，使用為在處理室内保持、固 疋石夕基板的機構，例如，習矣去 例如白知者已知有曰本特開平8— 46020 唬公報所揭示者。 、騎電夾頭具備形成為圓板狀的基部，形成於該基部 =在表面L夕基板的絕緣層’被該絕緣層所覆蓋之配 在絕緣層内部的電極’及將電塵施加至該電極的電壓施 加機構等，藉由電壓施加機構將電塵施加至電極，以在石夕 基板與絕緣層之間產生吸附力而吸附石夕基板。再者，該絕 緣層係由聚醯亞胺所構成。 然而，在該處理室的内面，附著有例如因氟碳氣體 (C^y氣體）之電漿化所產生的聚合物等之在蝕刻處理中所 產生之各種衍生物。又’該附著之衍生物’會形成微粒子 而成為附著在矽基板的原因，或因蝕刻氣體之電漿化所產 生之自由基耗費於與附著衍生物的反應、而成為矽基板之 餘刻進展不易的原因。 土 因此，疋期的除去附著在處理室内面之衍生物。具體 而&，雖然亦能由作業者徒手進行作業，但為了要有效的 進行除去作業，係將虛置（dummy)基板裝載於靜電夾頭上， 5 200845287 且將除去氣體（例如氧氣）供應至處理室内以電漿化，藉由 所產生之自由基或離子（氧自由基或氧離子）予以除去。又， 將虛基板裝載於靜電夹頭上之原因在於，因構成絕緣層之 聚醯亞胺會與自由基反應’故為避免此點而需保護絕緣 層。 又近年來，為了節省虛置基板對靜電夾頭之拆裝時 間’或者是為了節省虛置基板之準備費用，有未將虛置基 板褒載於靜電夾頭上，即藉由除去氣體所產生之自由基或 離子來除去附著衍生物的情形，此時，以對此種自由基或 離子具有耐性的陶瓷來取代聚醯亞胺而使用於絕緣層。 然而，陶-¾雖有較高的相對介電係數，但絕緣耐麼較 低’無法將較大的電壓施加至電極。作用於矽基板與絕緣 層間之每單位面積的吸附力F(N)，可由以下之算式i來算 出’根據該算 < 丨可以明瞭，在可施加之範圍内將—定之 電壓施加至電極時，以較薄的陶竞層厚可得到較大的吸附 力。 (算式1) F(N) = 〇·5 X ε。χ ε r X (E/t)2 其中，ε。（(^(乂观)）係真空的介電係數，ε ^係陶瓷的 相對介電係數，t(mm)係陶究的層厚，E(kv)係施加至電極 的電壓。 ^再者必而要提咼吸附力之原因在於，將氦氣等冷卻 氣體供應至矽基板之背面與絕緣層之表面之間以冷卻矽基 而抑制其/皿度上昇時’吸附力越大’則矽基板與絕緣層 200845287 越密合，供應至矽基板與絕緣層間之冷卻氣體的壓力越 高’就能更有效率的冷卻矽基板。又，必需要冷卻石夕基板 之原因在於，在形成於矽基板之膜中有不耐熱（例如光阻膜） 者。 (專利文獻1)曰本特開平8 — 46020號公報 【發明内容】 然而，即使是使用陶瓷來作為絕緣層，仍具有以下的 問題。亦即，在吸附對象之基板之背面，亦形成有例如二 氧化矽朕或聚醯亞胺膜等絕緣層，在吸附此種基板時，基 板侧之絕緣層會重疊於靜電夹頭側的絕緣層而造成絕緣^ 整體之厚度變厚，因此，吸附力降低且基板的冷卻效率i 降低。是以，吸附背面侧具有絕緣層之基板時，與吸附内 面側不具有絕緣層之基板時相較，其吸附力差異很大，會 有基板之吸附、保持不完全，無法獲得一定冷卻效果之狀 況。 又，隨著吸附何種基板所產生之吸附力的變動，在陶 甍所構成之絕緣膜的層厚越薄時，越是明顯的顯現，為了 要縮小此種吸附力的變動，必需將絕緣層的厚度設定成某 種耘度的厚度，而無法獲得高的吸附力及冷卻效率。 本發明係有鑑於以上情況而構成，其目的在於提供— 種對何種基板皆能進-步提高吸附力之靜電夾頭，及 其之電漿處理裝置。 為達成上述目的，本發明之靜電夾頭，係 基板，其特徵在於，具備： 持 200845287 基台，至少具有電極’及以覆蓋該電極之方式積層、 在表面裝載该基板的絕緣層；以及 電壓施加機構，將電壓施加至該電極； 該絕緣層，係形成為下層及上層之雙層構造，下層由 聚i藍亞胺構成，上層由陶竟構成。 依照此靜電夾帛，在#由電壓施加機構將電壓施加至 電極時，會在基板（例如矽基板或玻璃基板等）與絕緣層之 間產生吸附力而吸附、保持基板。 Γ' \ ‘ 此處，絕緣層係形成為下層及上層之雙層構造，下層 由聚醯亞胺構成，上層由陶瓷構成。此一方式，係根據本 案發明人重複專注研究的結果，該結果明確得知，相較於 僅由陶瓷形成相同層厚之絕緣層時，組合陶瓷（與聚醯亞胺 相較其相對介電係數較大，絕緣耐壓較小）與聚醯亞胺（與 陶瓷相較其相對介電係數較小，絕緣耐壓較大），其絕緣= 壓會增大。 〔 疋以，依照本發明之靜電夾頭，可加大絕緣層之絕緣 耐壓，因此，可增加施加至電極的電壓，增加施加至電極 之電壓時，能產生更大的吸附力。又，由於可施加更大的 電壓，因此，即使絕緣層之層厚增加某種程度，亦可得到 一定水準以上的高吸附力。再者，藉由使絕緣層之層厚增 加某種程度，可縮小因形成於基板背面側之絕緣層所產生 之吸附力的變動。藉此，可防止基板之吸附、保持的不完 全，在將冷卻氣體供應至基板背面與絕緣層表面之間以冷 卻基板時，能有效率的將基板冷卻。 8 200845287 又’由於在絕緣層之上岸尨 以除丰糾—+ 士 層知用陶竟，其對因除去氣體（用200845287 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to an electric discharge processing apparatus for adsorbing and holding a substrate. The head 'and the prior art: the electrostatic chuck, for example, is set in a device for electrically electrifying the predetermined process gas, and the device is used to keep the stone in the processing chamber. The mechanism of the substrate, for example, is disclosed in the Japanese Patent Publication No. Hei 8-46020. The riding chuck has a base formed in a disk shape, and is formed on the base = an insulating layer on the surface of the substrate, an electrode disposed in the insulating layer covered by the insulating layer, and applying electric dust to the substrate The voltage application mechanism of the electrode or the like applies electric dust to the electrode by a voltage applying mechanism to generate an adsorption force between the stone substrate and the insulating layer to adsorb the stone substrate. Further, the insulating layer is composed of polyimine. However, various kinds of derivatives which are generated in the etching treatment, such as a polymer generated by plasma formation of a fluorocarbon gas (C?y gas), adhere to the inner surface of the processing chamber. Further, the 'deposited derivative' forms a fine particle and adheres to the ruthenium substrate, or the radical generated by the plasmonization of the etching gas is consumed by the reaction with the attached derivative to become a ruthenium substrate. The reason is not easy. Soil Therefore, in the flood season, the derivative attached to the inside of the treatment chamber is removed. Specifically, although the operator can perform the work by hand, in order to perform the removal work efficiently, the dummy substrate is loaded on the electrostatic chuck, 5 200845287 and the gas (for example, oxygen) is supplied to the cleaning device. The chamber is plasma-treated and removed by the generated free radicals or ions (oxygen radicals or oxygen ions). Further, the reason why the dummy substrate is mounted on the electrostatic chuck is that the polyimide which constitutes the insulating layer reacts with the radicals, so the insulating layer needs to be protected in order to avoid this. In recent years, in order to save the disassembly and assembly time of the dummy substrate to the electrostatic chuck or to save the preparation cost of the dummy substrate, the dummy substrate is not loaded on the electrostatic chuck, that is, by removing the gas. In the case where a free radical or an ion is used to remove an attached derivative, in this case, a polyimide which is resistant to such a radical or ion is substituted for the polyimide and used for the insulating layer. However, although Tao-3⁄4 has a higher relative dielectric constant, the insulation resistance is lower. It is impossible to apply a large voltage to the electrode. The adsorption force F(N) per unit area acting between the tantalum substrate and the insulating layer can be calculated by the following formula i. "According to this calculation, it can be understood that when a voltage is applied to the electrode within a range that can be applied, With a thinner layer of pottery, a larger adsorption force can be obtained. (Formula 1) F(N) = 〇·5 X ε. ε ε r X (E/t)2 where ε. ((^(乂))) is the dielectric constant of vacuum, the relative dielectric constant of ε^-based ceramics, t(mm) is the layer thickness of ceramics, and E(kv) is the voltage applied to the electrodes. The reason why the adsorption force must be raised is that a cooling gas such as helium gas is supplied between the back surface of the crucible substrate and the surface of the insulating layer to cool the crucible and suppress the rise in the degree of the dish. The closer the substrate and the insulating layer 200845287 are, the higher the pressure of the cooling gas supplied between the ruthenium substrate and the insulating layer is, so that the ruthenium substrate can be cooled more efficiently. Moreover, the reason why the shi shi substrate must be cooled is that it is formed in 矽In the film of the substrate, there is a case where the film is not heat-resistant (for example, a photoresist film). [Patent Document 1] Japanese Patent Laid-Open No. Hei 8-46020 SUMMARY OF INVENTION However, even if ceramic is used as the insulating layer, the following problems occur. In other words, an insulating layer such as ruthenium dioxide or a polyimide film is formed on the back surface of the substrate to be adsorbed, and when the substrate is adsorbed, the insulating layer on the substrate side overlaps the insulation on the electrostatic chuck side. The layer causes the insulation ^ the thickness of the whole becomes thicker Therefore, the adsorption force is lowered and the cooling efficiency i of the substrate is lowered. Therefore, when the substrate having the insulating layer on the back side is adsorbed, the adsorption force is greatly different from that when the substrate having the insulating layer on the inner side is adsorbed. The adsorption and retention of the substrate are incomplete, and a certain cooling effect cannot be obtained. Further, as the adsorption force of the substrate is adsorbed, the thickness of the insulating film formed by the ceramic tile is thinner. In order to reduce such fluctuations in the adsorption force, it is necessary to set the thickness of the insulating layer to a certain thickness, and it is not possible to obtain a high adsorption force and cooling efficiency. The present invention is constructed in view of the above circumstances. The purpose of the present invention is to provide an electrostatic chuck capable of further improving the adsorption force, and a plasma processing apparatus thereof. The electrostatic chuck of the present invention is a substrate, characterized in that it has : holding the 200845287 abutment, having at least an electrode 'and an insulating layer laminated on the surface to cover the electrode; and a voltage applying mechanism to apply voltage The insulating layer is formed into a two-layer structure of a lower layer and an upper layer, the lower layer is composed of polyi-imine, and the upper layer is composed of ceramics. According to the electrostatic chuck, a voltage is applied by a voltage applying mechanism. When it reaches the electrode, an adsorption force is generated between the substrate (for example, a germanium substrate or a glass substrate) and the insulating layer to adsorb and hold the substrate. Γ' \ ' Here, the insulating layer is formed into a two-layer structure of a lower layer and an upper layer. The lower layer is composed of polyimine and the upper layer is composed of ceramic. This method is based on the results of repeated intensive studies by the inventors of the present invention, and the result clearly shows that the combination is formed when the insulating layer of the same layer thickness is formed only by ceramics. Ceramics (relative to polyimine, its relative dielectric constant is larger, insulation withstand voltage is smaller) and polyimine (relative to ceramics, its relative dielectric constant is smaller, insulation withstand voltage is larger), its insulation = The pressure will increase. [According to the electrostatic chuck according to the present invention, the insulation withstand voltage of the insulating layer can be increased, and therefore, the voltage applied to the electrode can be increased, and when the voltage applied to the electrode is increased, a larger adsorption force can be generated. Further, since a larger voltage can be applied, even if the thickness of the insulating layer is increased to some extent, a high adsorption force of a certain level or more can be obtained. Further, by increasing the layer thickness of the insulating layer to some extent, variation in the adsorption force due to the insulating layer formed on the back surface side of the substrate can be reduced. Thereby, the adsorption and retention of the substrate can be prevented, and when the cooling gas is supplied between the back surface of the substrate and the surface of the insulating layer to cool the substrate, the substrate can be efficiently cooled. 8 200845287 And because of the removal of the gas on the surface of the insulation layer, it is used to remove the gas.
Am 内面的衍生物）之電漿化所產生之自由 基或離子具有耐性，因此難以受到腐敍。 —再者’較佳為’該絕緣層之層厚為1.2mm以下。將一 =電壓施加至電極時，由於絕緣層之層厚越厚則吸附力 越小，因此基於此觀點’上述方式為較佳作法。 又’較佳為，該上層之声厘 从— a炙層/子為0.1mm以上。其原因在 方；，右薄於0.1_則強度將會非f的弱。 帝 °亥包[&加機構亦可將J 0kv g下之電塵施加至該 电極。其原因在於’在-般的電壓施加機構Μ堇能將電壓 施加至10kv左右，為了施加在此以上的電塵，必需要高 價專用L加機構，及構㈣電夾収其他構件有不 耐高電壓之虞。 車乂佺為，遠上層之層厚ti(mm)及該下層之層厚 t2(mm)，係设定成每單位面積之吸附力刚滿足下式關係： F °*5 χ ε 〇 χ ε X X (E/Ctj+t^)2 > 3325 (Ν) (其中，ε 0(C/(Vxm))係真空的介電係數卜8 85χΐ〇·12)，· εχ係該絕緣層之相對介電係數Url wr2/(tl xer2 + t2 χ erl係該上層之相對介電係數，係該下層之相 對介電係數；E(kv)係施加至該電極之電壓，採取1〇汴幻及 〇.5^Vbx田中值較小者之電壓；Vbx(kv)係該絕緣層的絕緣 耐£ (qxVbi+LxVbJ ; Vbjkv/mm)係該上層的絕緣耐壓， Vbjkv/mm)係該下層的絕緣耐壓）。 藉此 T彳乂付疋水準以上的高吸附力，亦即3325(N) 200845287 以上的吸附力，因此，即使在吸附形成有絕緣層之基板時 吸附力降低，仍可防止基板之吸附、保持不完全，或無法 得到一定冷卻效果的情況。 又本卷明之電漿處理裝置，其特徵在於，至少具備： 上述靜電夾頭； 處理至，具有封閉空間，該靜電夾頭之基台係配置於 内部； 氣體供應機構，將處理氣體供應至該處理室内；以及 電漿產生機才冓，使供應1該處王里室内之處理氣體電聚 化； 藉由已電漿化之處理氣體，對該靜電夹頭之基台上所 保持的基板進行處理。 依照該電漿處理裝置，由於且供 衣置田於具備上述之靜電夾頭，因 此’可對該靜電夹頭所伴括夕I > 、/r保符之基板進仃效果更佳的電漿處 理（例如蝕刻處理、灰化處理、及成膜處理等）。 因此，依照本發明之靜電夾頭及電襞處理裝置’將絕 緣層分為由聚醯亞胺構成之下層，及由陶:光構成之上層之 雙層構造，以提高絕緣層之絕緣 ^ 〇承w /土 杈咼可施加至電極 之電壓，即使絕緣層的層厚 一 卞9刀口呆禋耘度仍能產生一定水 準以上的高吸附力，藉此，能 匕70王的保持作為吸附對象的 各種基板，且能提高冷卻效果。 【實施方式】 以下根據附圖說明本發明之呈體 /、篮κ苑形態。又，圖1 係頒示本發明一實施形態 触刻I置之概略構成的截面 10 200845287 圖，圖2係顯示本實施形態之基板保持裳置之概略構成的 截面圖。 如圖1及圖2所示，本例之電漿處理裝置的姓刻裝置 1，具備具封閉空間、在内部配置蝕刻對象之矽基板κ的 處理室1 1，用以保持矽基板κ的基板保持裝置汕用以 f \The free radical or ion generated by the plasmalization of the derivative of Am) is resistant and therefore difficult to be rotted. Further, it is preferable that the thickness of the insulating layer is 1.2 mm or less. When a voltage is applied to the electrode, the thicker the thickness of the insulating layer is, the smaller the adsorption force is. Therefore, the above embodiment is a preferred method. Further, it is preferable that the sound of the upper layer is 0.1 mm or more from - a layer/sub. The reason is in the square; if the right is thinner than 0.1_, the intensity will be weaker than f. Emperor ° Haibao [& plus mechanism can also apply electric dust under J 0kv g to the electrode. The reason is that 'the voltage application mechanism can apply a voltage to about 10 kV. In order to apply the above-mentioned electric dust, it is necessary to use a high-priced dedicated L-adding mechanism, and the structure (4) is electrically clamped to other members. The voltage is the same. The rut is that the layer thickness ti (mm) of the upper layer and the layer thickness t2 (mm) of the lower layer are set such that the adsorption force per unit area just satisfies the following relationship: F °*5 χ ε 〇χ ε XX (E/Ctj+t^)2 > 3325 (Ν) (where ε 0 (C/(Vxm)) is the dielectric constant of the vacuum 8 8 85 χΐ〇 · 12), · ε χ is the relative of the insulating layer The dielectric constant Url wr2/(tl xer2 + t2 χ erl is the relative dielectric constant of the upper layer, which is the relative dielectric constant of the lower layer; E(kv) is the voltage applied to the electrode, taking 1 〇汴 〇 and 〇 .5^Vbx The voltage of the lower median value; Vbx(kv) is the insulation resistance of the insulation layer (qxVbi+LxVbJ; Vbjkv/mm) is the insulation resistance of the upper layer, Vbjkv/mm) is the insulation of the lower layer Withstand voltage). Therefore, the high adsorption force above the level of T, which is the adsorption force of 3325(N) 200845287 or more, can prevent the adsorption and retention of the substrate even when the adsorption force is lowered when the substrate on which the insulating layer is formed is adsorbed. Incomplete, or unable to achieve a certain cooling effect. Further, the plasma processing apparatus of the present invention includes at least: the electrostatic chuck; the processing has a closed space, the base of the electrostatic chuck is disposed inside; and the gas supply mechanism supplies the processing gas to the a processing chamber; and a plasma generator to electrically polymerize the processing gas in the interior of the chamber; the substrate held on the base of the electrostatic chuck is processed by the plasma processing gas deal with. According to the plasma processing apparatus, since the electrostatic chuck is provided in the above-described electric discharge processing apparatus, the electrostatic chuck can be accompanied by a slurry having a better effect on the substrate of the electrostatic chuck. Processing (for example, etching treatment, ashing treatment, film formation treatment, etc.). Therefore, the electrostatic chuck and the electric discharge processing apparatus according to the present invention divide the insulating layer into a lower layer composed of polyimide, and a double layer structure composed of ceramic: light to improve the insulation of the insulating layer.承w / soil can be applied to the voltage of the electrode, even if the layer thickness of the insulation layer is 9 刀 禋耘 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 王 王 王 王 王 王 王A variety of substrates, and can improve the cooling effect. [Embodiment] Hereinafter, the form of the invention/the basket of the present invention will be described with reference to the drawings. 1 is a cross-sectional view showing a schematic configuration of a substrate in which a contact is placed in an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a schematic configuration of a substrate in which the substrate is held in the present embodiment. As shown in FIG. 1 and FIG. 2, the surname apparatus 1 of the plasma processing apparatus of the present embodiment includes a processing chamber 1 having a closed space and a substrate κ on which an etching target is placed, and a substrate for holding the substrate κ. Hold device for f \
及用以控制基板保持裝置 置38、電漿產生裝置41、 制裝置（未圖示）。 降低處理室η内之壓力的排氣裝置35,用以將處理氣體 供應至處理室U内的氣體供應裝置38，使供應至處理室 11内之處理氣體電漿化的電漿產生裝置41，用以將高頻 電壓施加至基板保持裝置20之本體23的第i高頻電源二^ 2〇、排氣裝置35、氣體供應裝 及第1尚頻電源44之作動的控 即該處理室U，係由具有相互連通之内部空間的下部容 器I2及上部容器13所構成，上部容器n形成為較下部 容器12小。在下部容器12的側壁’形成有供矽基板κ之 搬入、搬出之開口部12a ’該開口部12a係藉擋門Μ而開 "玄基板保持裝置20之構成，具備用以吸附、保持矽基 板κ的靜電夾頭21，將該靜電夾頭21所保持之矽基板κ 冷部的冷卻機構3〇，及用以昇降靜電夾頭21之基台22的 昇降汽缸3 3。 ' ,该靜電夾頭21，具備由配置在下部容器12内之金屬 製本體23、及積層在該本體23上面之絕緣膜24、電極乃、 絕緣層26構成的基台22，及將直流電壓施加至電極μ的 11 200845287 直流電源29，在本體23的下面連接昇降_ 汁丨牛，飞缸33，絕緣體 24係形成於本體23的上面，電極25 ^係形成於絕緣膜24 的上面，絕緣層26係形成於電極25的上面。 該絕緣層26,係形成為聚醯亞胺層”及陶瓷層μ的 雙層結構，聚醯亞胺層27係形成於電極 1 的上面，陶兗 層28係形成於聚醯亞胺層27的上面。矽基板〖係裝载於 陶究層28的表面’在陶-泛層28的表面形成有未圖示之複 數個槽。And for controlling the substrate holding device 38, the plasma generating device 41, and the device (not shown). An exhaust device 35 for reducing the pressure in the process chamber η, for supplying the process gas to the gas supply device 38 in the process chamber U, and a plasma generator 41 for plasma-treating the process gas supplied into the process chamber 11, The processing chamber U for controlling the operation of the i-th high-frequency power source 2, the exhaust device 35, the gas supply device, and the first frequency-frequency power source 44 for applying the high-frequency voltage to the body 23 of the substrate holding device 20 The lower container I2 and the upper container 13 having internal spaces that communicate with each other are formed, and the upper container n is formed smaller than the lower container 12. In the side wall ' of the lower container 12, an opening portion 12a for carrying in and out of the substrate κ is formed. The opening portion 12a is opened by a threshold and is configured to absorb and hold the crucible. The electrostatic chuck 21 of the substrate κ, the cooling mechanism 3 of the substrate κ cold portion held by the electrostatic chuck 21, and the lift cylinder 33 for raising and lowering the base 22 of the electrostatic chuck 21 are provided. The electrostatic chuck 21 includes a metal body 23 disposed in the lower container 12, an insulating film 24 laminated on the body 23, an electrode 22, and an insulating layer 26, and a DC voltage. The 11 200845287 DC power supply 29 applied to the electrode μ is connected to the lower surface of the body 23 to connect the lift _ juice yak, the flying cylinder 33, and the insulator 24 is formed on the upper surface of the body 23, and the electrode 25 is formed on the upper surface of the insulating film 24, and is insulated. A layer 26 is formed on the upper surface of the electrode 25. The insulating layer 26 is formed into a two-layer structure of a polyimide layer and a ceramic layer μ. The polyimide layer 27 is formed on the surface of the electrode 1, and the ceramic layer 28 is formed on the polyimide layer 27. The top surface of the pottery layer 28 is formed on the surface of the pottery layer 28 by a plurality of grooves (not shown).
又 以下為較佳，陶瓷層 28 絕緣層26之層厚以1.2mm 之層厚以0.1mm以上為較佳。又，直流電源μ之構成， 較佳係能施加10kv以下之直流電壓。又，陶瓷層28之層 厚及聚醯亞胺層27之層厚q之厚度設定，較佳係使^ 每單位面積之吸附力F(N)滿足以下算式2的關係。 八 (算式2)Further preferably, the thickness of the ceramic layer 28 insulating layer 26 is preferably 0.1 mm or more with a layer thickness of 1.2 mm. Further, in the configuration of the DC power source μ, it is preferable to apply a DC voltage of 10 kV or less. Further, the thickness of the ceramic layer 28 and the thickness q of the polyimide layer 27 are preferably set such that the adsorption force F(N) per unit area satisfies the relationship of the following formula 2. Eight (Equation 2)
吸附力F X ε X ε Λ {Ε/(ΐι+ί2))2 > 3325 (Ν)Adsorption force F X ε X ε Λ {Ε/(ΐι+ί2)) 2 > 3325 (Ν)
其中，e〇(C/(Vxm))係真空的介電係數（=8·85χΐ〇·12); ε 乂係絕緣層26之相對介電係數（ε " χε χε。χ e π)) , ε rl係陶瓷層28之相對介電係數，£ ^係聚醯亞胺 層27之相對介電係數；E(kv)係施加至電極25之電壓，採 取10(kv)及〇.5xVbx當中值較小者之電壓；Vbjkv)係絕緣 層26的絕緣耐壓（tiXVbi+t2xVb2) ; Vbi(kv/mm)係陶瓷層28 的絕緣耐壓，Vb2(kv/mm)係聚醯亞胺層27的絕緣耐壓。 再者，在0.5xVbx較i〇kv為低時，將大小為〇 5xV、之電 墨施加至電極25的原因在於，基於安全的理由。 12 200845287 又，依照該靜電夾頭21，在直流電源29將直流電壓 施加至電極25時，在矽基板K與絕緣層26之間會產生吸 附力而吸附、保持石夕基板Κ。 再者，如上述，使絕緣層26為雙層構造之原因在於， 本案發明人反複專注研究的結果，得知組合陶瓷與聚醯亞 胺之方式，相較於相同層厚之絕緣層僅由陶瓷來形成時， 絕緣耐壓將會變大。因此，若是層厚相同，相較於僅使用 陶瓷來形成，陶瓷與聚醯亞胺之雙層構造能對電極25施 加較大的電壓，藉由施加電壓的增大，而能增大吸附力。 此外，圖3至圖5係顯示陶瓷層28之相對介電係數ε η為10，聚醯亞胺層27的相對介電係數ε d為3·4，陶瓷 層28的絕緣耐壓Vbi為15(kv/mm)，聚醯亞胺層27的絕 緣耐壓Vh為205(kv/mm)時，改變陶瓷層28的層厚、及 木fe亞胺層27的層厚q，而分別求出絕緣層26的相對介 電係數ε x、絕緣層26的絕緣耐壓Vbx(kv)、施加至電極25 的電壓為0.5xVbx(kv)時的吸附力F(N)、及施加至電極25 的電壓為10kv時的吸附力F(N)之結果。再者，圖3係顯 示絕緣層26的層厚〇14^2)為12mm時，圖4係顯示絕緣層 26的層厚（t】+t2)為imm時，圖5係顯示絕緣層26的層厚 (ti+t2)為 〇.5mm 時。 根據上述圖3至圖5可以了解，在組合陶瓷與聚醯亞 胺後’絕緣耐塵會增強而使可施加至電極的電壓變大， 藉由施加更大的電壓至電極25，而能產生更大的吸附力。 又，絕緣層26所能產生的吸附力，舉例而言，係僅由層 13 200845287 厚 1 mm之陶警 以上之吸附力。《自知靜電夾頭所無法得到的3325N 。亥Μ機構30，具備配置成 絕緣膜24、雷田&口 22(本體23、 ° 、聚醯亞胺層2 7、及陶瓷> 2 8彳之北$ 側貫通、於陶变層 及门尤廣28)之月面 將冷卻氣體(例如氦〜 的複數個供應# 31 ’及 官3 1之上端開口立 田分仏應 邛貰出的冷卻氣體供應部32。Where e〇(C/(Vxm)) is the dielectric constant of vacuum (=8·85χΐ〇·12); ε 乂-based insulating layer 26 is relative to dielectric constant (ε " χε χε.χ e π)) , the relative dielectric constant of the ε rl ceramic layer 28, and the relative dielectric constant of the polyimide layer 27; E(kv) is the voltage applied to the electrode 25, and is taken as 10 (kv) and 〇.5xVbx The voltage of the smaller value; Vbjkv) is the insulation withstand voltage of the insulating layer 26 (tiXVbi+t2xVb2); the insulating withstand voltage of the Vbi(kv/mm) ceramic layer 28, and the Vb2 (kv/mm) polyimine layer 27 insulation withstand voltage. Further, when 0.5xVbx is lower than i〇kv, the reason why the ink of size 〇 5xV is applied to the electrode 25 is for safety reasons. Further, according to the electrostatic chuck 21, when a DC voltage is applied to the electrode 25 by the DC power source 29, an adsorption force is generated between the 矽 substrate K and the insulating layer 26 to adsorb and hold the 夕 Κ substrate Κ. Further, as described above, the reason why the insulating layer 26 has a two-layer structure is that the inventors of the present invention have repeatedly focused on the results of the research, and it is known that the method of combining the ceramic and the polyimide is compared to the insulating layer of the same layer thickness only by When ceramic is formed, the insulation withstand voltage will become large. Therefore, if the layer thickness is the same, compared to the case where only ceramic is used, the double layer structure of ceramic and polyimide can apply a large voltage to the electrode 25, and the adsorption force can be increased by the application of an increased voltage. . Further, FIGS. 3 to 5 show that the relative dielectric constant ε η of the ceramic layer 28 is 10, the relative dielectric constant ε d of the polyimide layer 27 is 3.4, and the dielectric withstand voltage Vbi of the ceramic layer 28 is 15. (kv/mm), when the dielectric breakdown voltage Vh of the polyimide layer 27 is 205 (kv/mm), the layer thickness of the ceramic layer 28 and the layer thickness q of the woody imine layer 27 are changed, and they are respectively obtained. The relative dielectric constant ε x of the insulating layer 26, the insulating withstand voltage Vbx (kv) of the insulating layer 26, the adsorption force F(N) when the voltage applied to the electrode 25 is 0.5 x Vbx (kv), and the applied to the electrode 25 The result of the adsorption force F(N) at a voltage of 10 kV. In addition, FIG. 3 shows that when the layer thickness 〇14^2) of the insulating layer 26 is 12 mm, and FIG. 4 shows that the layer thickness (t]+t2) of the insulating layer 26 is imm, FIG. 5 shows the insulating layer 26. When the layer thickness (ti+t2) is 〇.5mm. According to the above-mentioned FIG. 3 to FIG. 5, it can be understood that after the combination of the ceramic and the polyimide, the insulating dust resistance is enhanced and the voltage which can be applied to the electrode is increased, and by applying a larger voltage to the electrode 25, it is possible to generate more. Large adsorption force. Further, the adsorption force which can be generated by the insulating layer 26 is, for example, an adsorption force of only 1 mm of the thickness of the layer 13 200845287. "The self-known electrostatic chuck is not available for the 3325N. The cymbal mechanism 30 is provided with an insulating film 24, a Leitian & port 22 (body 23, °, polyimine layer 27, and ceramics). The lunar surface of the door is 28). The cooling gas supply unit 32 is to be cooled by the cooling gas (for example, the plurality of supply # 31 ' of the 氦~ and the upper end of the official 3 1 opening.
又，依照該冷卻機構3〇，由 卻氣體供應至各供廍总^ ± Ρ札體i、應4 32將冷 B 31時，所供應之冷卻氣體，伤士 各供應管3!的上端開進;广體係由 表面之槽(未圖示)内流通。养:广在形成於陶究層28 ^ 28 * 猎此，使得吸附、保持在陶瓷 層28表面的石夕基板K受到冷卻。 該排氣裝置3 5 >播# ^ a 之構成，包含排氣泵36、 該排氣泵乂盥下部宠哭” ⑺木遷接 ”下P合為12的排氣管37,透過排氣管37 =:部容…的氣體，使處理室"的内部成為:: 該氣體供應裝置38之構成，包含心供應作為處理氣 體之兹刻氣體⑽口 sf6氣體）及耐姓刻層形成氣體（例如 c4F8 的處理氣體供應冑39’及連接該處理氣體供應 部39與上部容器13之上面 、 幻仏應& 40，從處理氣體供應 部39透過供應管4G隸職體及耐㈣層形錢體供應 至上部容器1 3内。 〜 该電漿產生裝4 41 <構成，包含配置在上部容器u 之外周部的複數個線目42’及用以將高頻電塵施加至各線 14 200845287 口 的第2阿頻電源43，藉第2高頻電源43將高頻電壓 她加至線圈42,使供應至上部容器13内之蝕刻氣體及耐 颠刻層形成氣體電漿化。 "亥第1呵頻電源44，係藉由將高頻電壓施加至靜電夾 頭21的本體23，在本體23與電漿之間產生電位差（偏壓 電位）。 久该控制裝置（未圖示），係用以控制該直流電源29、昇 降&缸33、冷卻氣體供應部32、排氣泵36、處理氣體供 應部39、第2高頻電源43、及第工高頻電源44的作動。 又，控制裝置（未圖示）係交互反覆進行將矽基板κ予 以餘刻的㈣步驟，及切基板Κ形成耐飿刻層的耐钱刻 層形成步驟。在蝕刻步驟，分別藉第i高頻電源44及第2 :頻電源43將高頻電壓施加至本體23及線圈42，從處理 虱體供應部39將蝕刻氣體供應至處理室11内，藉排氣泵 36使處理室11内成為既定壓力。另一方面，在耐蝕刻層 形成步驟，藉第2高頻電源43將高頻電壓施加至線圈42， 從處理氣體供應部39將耐蝕刻層形成氣體供應至處理室u 内藉排氣泵3 6使處理室11内成為既定壓力。 依妝由上述方式構成之本例的蝕刻裝置丨，在將矽基 板κ妥適地搬入處理室n的下部容器丨2内，且裝載於靜 電失頭21的基台22上（陶变層28的表面）後，藉由直流電 2 Μ將直流電壓施加至電極25。藉此在矽基板κ與絕緣 層26之間產生吸附力而吸附、保持矽基板κ。 之後，將蝕刻步驟與耐蝕刻層形成步驟交互反覆進行 15 200845287 既疋-人數。在钱刻步驟，將鍅刻氣體供應至處理室1 1内 而使其電漿化，電漿中之自由基與矽原子產生化學反應、 或兒漿中之離子藉由偏壓電位而朝基台22側移動，撞擊 矽基板κ。藉此，在矽基板κ形成具備既定寬度及深度之 槽或孔。 另一方面，在耐蝕刻層形成步驟，將耐蝕刻層形成氣 to供應至處理室丨丨内而使其電漿化，由電漿中之自由基Further, according to the cooling mechanism 3, when the gas is supplied to each of the supply ports, the cooling gas B 31 is supplied, and the supplied cooling gas is supplied to the upper end of each of the supply pipes 3! The wide system is circulated by grooves (not shown) on the surface. Nutrient: widely formed in the ceramic layer 28 ^ 28 * hunting, so that the stone substrate K adsorbed and held on the surface of the ceramic layer 28 is cooled. The exhaust device 3 5 > broadcast # ^ a configuration includes an exhaust pump 36, the exhaust pump 乂盥 lower pet crying" (7) wood migrating" under the P into 12 exhaust pipe 37, through the exhaust The tube 37 =: the gas of the portion, so that the inside of the processing chamber is:: the gas supply device 38 is composed of a gas supply (10) sf6 gas as a processing gas, and a gas-forming gas (for example, the processing gas supply port 39' of c4F8 and the upper surface of the upper processing container supply unit 39 and the upper container 13, the illusion & 40, the processing gas supply unit 39 through the supply tube 4G, and the (four) layer shape The money body is supplied to the upper container 13. The plasma generating device 4 41 is configured to include a plurality of wires 42' disposed on the outer periphery of the upper container u and for applying high frequency electric dust to the respective wires 14 The second A-frequency power supply 43 of the port of 200845287 adds the high-frequency voltage to the coil 42 by the second high-frequency power source 43 to plasmaize the etching gas and the resistance-resistant layer forming gas supplied into the upper container 13. The first power frequency 44 is applied to the body 23 of the electrostatic chuck 21 by applying a high frequency voltage. A potential difference (bias potential) is generated between the body 23 and the plasma. The control device (not shown) is used to control the DC power source 29, the lift & cylinder 33, the cooling gas supply unit 32, and the row. The operation of the air pump 36, the processing gas supply unit 39, the second high-frequency power source 43, and the multiplexed high-frequency power source 44. Further, the control device (not shown) alternately performs the (fourth) step of engraving the 矽 substrate κ. And cutting the substrate Κ to form a stencil resistant layer forming step. In the etching step, the high frequency voltage is applied to the body 23 and the coil 42 by the ith high frequency power source 44 and the second frequency power source 43 respectively. The processing cartridge supply unit 39 supplies the etching gas into the processing chamber 11, and the inside of the processing chamber 11 is set to a predetermined pressure by the exhaust pump 36. On the other hand, in the etching resistant layer forming step, the second high-frequency power source 43 is high. The frequency voltage is applied to the coil 42, and the etching-resistant layer forming gas is supplied from the processing gas supply unit 39 to the processing chamber u, and the inside of the processing chamber 11 is set to a predetermined pressure by the exhaust pump 36. The makeup of the present embodiment is configured as described above. Etching device 丨, properly moving the 矽 substrate κ After the lower container 丨2 of the chamber n is mounted on the base 22 of the static head 21 (the surface of the ceramic layer 28), a direct current voltage is applied to the electrode 25 by direct current 2 。. An adsorption force is generated between the insulating layer 26 and the ruthenium substrate κ is adsorbed and held. Thereafter, the etching step and the etch-resistant layer forming step are alternately repeated. 15 200845287 疋-number of people. In the engraving step, the engraving gas is supplied to the processing. The chamber 11 is made to be plasmalized, and the radical in the plasma chemically reacts with the helium atom, or the ions in the slurry move toward the base 22 side by the bias potential, and impinge on the substrate κ. Thereby, a groove or a hole having a predetermined width and depth is formed on the ruthenium substrate κ. On the other hand, in the etching-resistant layer forming step, the etching-resistant layer is formed into a gas to be supplied into the processing chamber to be plasma-plasmaized by the radical in the plasma.
所產生之聚合物，會堆積在矽基板K的表面（蝕刻所形成 之扣或孔的側壁及底面等）。藉此在矽基板κ形成耐蝕刻 層（氟碳膜）。 藉由父互反覆進行該蝕刻步驟與耐蝕刻層形成步驟， 石夕基板Κ之槽或孔之側壁一彡受到耐姓刻層之保護一邊在 其深度方向進行蝕刻。 再者，在蝕刻步驟及耐蝕刻層形成步驟進行中，將冷 卻氣體由冷卻氣體供應部32供應至各供應管31，在形成 於尤層28纟面之槽（未圖示）内流通。藉此，吸附、 :寸；基口 22上之矽基板κ受到冷卻，避免其温度的上 幵〇 互反覆進行#刻步驟與耐#刻層形成步驟既 疋-人數時，停止直流電源29對電極 π访I α 丁电桂25轭加之直流電壓後， ^ 土板Κ妥適地搬出至下部容器12的外部。 如此’依照本例之飿刻裝置 μ 26 士、杏 』衣置1使静電夾頭21之絕緣 曰 成為陶瓷層28及聚醯亞胺層27之錐屏M 1 ^ , ^ % ^ _ 曰^ <雙層構造，精此 曰強、、'巴緣層26的絕緣耐壓 了&因此增大可施加至電極25 16 200845287 的直流電壓，若是施加至電極25之直流電壓較大，則能 生更大的吸附力。又’因為能施加更大的直流電壓，因 此即使絕緣層26之層厚達某種程度，亦能得到_定水準 以上的南吸附力。再者，藉由使絕緣層％之層厚達某種 程度，可縮小形成Μ基板κ之背面側之絕緣層所產生之 吸附力之變動。 藉此’可防切基板Κ之吸附、保持並不完全的狀況、 或能藉由供應至石夕基板Κ之背面與絕緣層26表面之間的 冷卻氣體來有效的冷卻矽基板〖，可對靜電夾頭2ι所保持 之基板Κ，更有效的進行蝕刻處理。 又，由於在絕緣^ 26 @上層採用對因除去氣體（用以 除去附者在處理室U内面的衍生物)之電漿化而產生之自 由基或離子具有耐性的陶瓷，因此難以受到腐蝕。 又，將一定之直流電壓施加至電極乃時，絕緣層％ 的層厚越大則吸附力越小，但將絕緣層26的層厚設定在 1.2mm以下時，能確保一定水準以上的吸附力。 又，將陶瓷層28的層厚設定為0·1ηπη以上時，可防 止強度極度弱化。 士又，直流電源29對電極25施加10卜以下的直流電壓 時，無需高價的專用電源，又，可防止產生構成靜電夹頭 2 1之其他構件因不耐高電壓而導致破損等問題。 又，將陶瓷層28之層厚tl及聚醯亞胺層27之層厚丈 的厚度設定成能滿足上述算式2的關係時，可得到一定水2 準以上的高吸附力，亦即3325(N)以上的吸附力，因此， 17 200845287 在吸附形成有絕緣層之矽基板κ時，即使吸附力降低，亦 可防止矽基板κ之吸附、保持不完全，或無法得到一定冷 卻效果。 以上雖已說明本發明之一實施形態，但本發明所能採 用之具體形態並不偈限於此。 在上例中，舉單極型者作為靜電夾頭2 1的一例，但並 不侷限於此，使用雙極型者亦可。又，雖將靜電夾頭2工 。又在钱刻裝置1，但亦可設於進行灰化處理或成膜處理等 之電衆處理裝置◦又，靜電夾頭21所保持之基板，並不 偈限於石夕基板κ，亦可為玻璃基板等各種基板。 【圖式簡單說明】 圖1係顯示本發明一實施形態之餘刻裝置之概略構成 的截面圖。 圖2係顯示本實施形態之基板保持裝置之概略構成的 截面圖。 ® 3係分別顯示絕緣層之層厚為1 2mm時，絕緣層之 相對；1電係數、絕緣層之絕緣耐壓及吸附力的圖。 圖4係分別顯示絕緣層之層厚為lmm時，絕緣層之相 對介雷位去人 ι你數、絕緣層之絕緣耐壓及吸附力的圖。 圖5係分別顯示絕緣層之層厚為〇.5nim時，絕緣層之 相對介I * ’、數、、纟巴緣層之絕緣对壓及吸附力的圖。 【主要元件符號說明】 I 钱刻裝置（電漿處理裝置） II 處理室 18 200845287 12 下部容器 13 上部容器 14 擋門 20 基板保持裝置 21 靜電夾頭 22 基台 23 本體 24 絕緣膜 25 電極 26 絕緣層 27 聚醯亞胺層 28 陶瓷層 29 直流電源 30 冷卻機構 3 1 供應管 32 冷卻氣體供應部 33 昇降汽缸 35 排氣裝置 38 氣體供應裝置 41 電漿產生裝置 K 碎基板 19The resulting polymer is deposited on the surface of the ruthenium substrate K (the side walls and the bottom surface of the crater or hole formed by etching). Thereby, an etching resistant layer (fluorocarbon film) is formed on the germanium substrate κ. The etching step and the etching resistant layer forming step are repeated by the parent, and the sidewalls of the grooves or holes of the stone substrate are etched in the depth direction while being protected by the resistance layer. Further, during the etching step and the etching resistant layer forming step, the cooling gas is supplied from the cooling gas supply unit 32 to each of the supply tubes 31, and flows through a groove (not shown) formed in the surface of the surface layer 28. Thereby, the substrate κ on the base port 22 is cooled, and the upper layer of the temperature is prevented from being reversed. The step of engraving and the step of forming the layer 10 are stopped. After the electrode π visits the I α Ding electric 25 yoke and the DC voltage is applied, the earth plate is properly carried out to the outside of the lower container 12. Thus, the insulating device of the electrostatic chuck 21 is made into the ceramic layer 28 and the tapered screen of the polyimide layer 27 by the engraving device of the present embodiment, and the thickness of the electrostatic chuck 21 is 1 1 , ^ % ^ _ 曰^ <Double-layer structure, which is reluctant, and the insulating pressure resistance of the edge layer 26 is increased. Therefore, the DC voltage which can be applied to the electrodes 25 16 200845287 is increased, and if the DC voltage applied to the electrode 25 is large, It can produce greater adsorption. Further, since a larger DC voltage can be applied, even if the layer thickness of the insulating layer 26 is to some extent, a south adsorption force of more than a predetermined level can be obtained. Further, by making the layer thickness of the insulating layer % to some extent, it is possible to reduce the variation in the adsorption force generated by the insulating layer forming the back side of the ruthenium substrate κ. Therefore, the substrate can be prevented from being adsorbed and maintained in an incomplete state, or the ruthenium substrate can be effectively cooled by supplying a cooling gas between the back surface of the substrate and the surface of the insulating layer 26. The substrate 保持 held by the electrostatic chuck 2 ι is more effectively etched. Further, since the ceramic having the resistance to the radical or ion generated by the plasma removal of the gas (derivative for removing the derivative on the inner surface of the processing chamber U) is used in the upper layer of the insulating layer, it is difficult to be corroded. In addition, when a certain DC voltage is applied to the electrode, the adsorption force is smaller as the layer thickness of the insulating layer is larger. However, when the layer thickness of the insulating layer 26 is set to 1.2 mm or less, the adsorption force at a certain level or higher can be secured. . Further, when the layer thickness of the ceramic layer 28 is set to 0·1ηπη or more, the strength can be prevented from being extremely weak. Further, when the DC power supply 29 applies a DC voltage of 10 watts or less to the electrode 25, it is not necessary to use a high-priced dedicated power source, and it is possible to prevent the other members constituting the electrostatic chuck 2 from being damaged due to the high voltage. When the thickness of the layer of the ceramic layer 28 and the thickness of the layer of the polyimide layer 27 are set so as to satisfy the relationship of the above formula 2, a high adsorption force of a certain water level or more can be obtained, that is, 3325 ( N) The above-mentioned adsorption force, therefore, 17 200845287 When the ruthenium substrate κ having the insulating layer formed thereon is adsorbed, even if the adsorption force is lowered, the adsorption and retention of the ruthenium substrate κ can be prevented, or a certain cooling effect cannot be obtained. Although an embodiment of the present invention has been described above, the specific form that can be employed in the present invention is not limited thereto. In the above example, a single-pole type is used as an example of the electrostatic chuck 2, but it is not limited thereto, and a bipolar type may be used. Also, although the electrostatic chuck 2 is used. In addition, the apparatus 1 is provided, but it may be provided in a battery processing apparatus such as an ashing process or a film forming process, and the substrate held by the electrostatic chuck 21 is not limited to the Shishi substrate κ, and may be Various substrates such as glass substrates. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a schematic configuration of a remnant device according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a schematic configuration of a substrate holding device of the embodiment. ® 3 shows the relative relationship of the insulating layer when the layer thickness of the insulating layer is 12 mm; the electrical coefficient, the insulating withstand voltage of the insulating layer, and the adsorption force. Fig. 4 is a graph showing the relative dielectric level of the insulating layer, the dielectric breakdown of the insulating layer, and the insulating withstand voltage and the adsorption force of the insulating layer when the thickness of the insulating layer is 1 mm. Fig. 5 is a graph showing the relative dielectric I*', the number of the insulating layers, and the insulating pressure and adsorption force of the insulating layer when the layer thickness of the insulating layer is 〇5. [Main component symbol description] I money engraving device (plasma processing device) II processing chamber 18 200845287 12 lower container 13 upper container 14 blocking door 20 substrate holding device 21 electrostatic chuck 22 base 23 body 24 insulating film 25 electrode 26 insulation Layer 27 Polyimide layer 28 Ceramic layer 29 DC power supply 30 Cooling mechanism 3 1 Supply pipe 32 Cooling gas supply 33 Lifting cylinder 35 Exhaust device 38 Gas supply device 41 Plasma generating device K Broken substrate 19