TW200842500A - Photolithography system and method - Google Patents

Abstract

A photolithography system for conducting photolithography on a wafer includes an exposure light source, a mask unit, and a lens unit. The mask unit includes a mask and a first and a second light screens. The mask includes spaced first and second pattern areas. The light screens can be alternately arranged to be parallel with the mask in a vertical direction. The first light screen has a first exposure zone that allows only the light passing through the first pattern area to irradiate on the wafer, and the second light screen has a second exposure zone that allows only the light passing through the second pattern area to irradiate on the wafer. In a divisional photolithography design using the light screens that respectively allow only the light passing through the first or the second pattern area to irradiate on the wafer, the mask pattern can be accurately photo-lithographed on the wafer by division without changing the relative position of the mask to the wafer.

Description

200842500 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種曝光系統與曝光方法，特別是指 一種半導體微影曝光系統與曝光方法。 【先前技術】200842500 IX. Description of the Invention: [Technical Field] The present invention relates to an exposure system and an exposure method, and more particularly to a semiconductor lithography exposure system and exposure method. [Prior Art]

在半導體微影製程中，為使一電路圖案可精確地微影 稷製至晶圓上，藉以在晶圓上糈確定義出具有微小線寬與 間距(Pitch)的電路圖案，晶圓廠一直在開發各種不同的製程 技術。由於光軍上的電路圖案之線寬與間距可能有多種不 同的刀佈情況，為使光罩之電路圖案的各部位皆能精確地 微影至光罩上，並具有較佳之解析度，目前晶圓廠採用的 其中一種微影製程方式，是將原本成型於單一光罩上的電 路圖案分割成數個部分，且分別成型於一光罩上，然後， 再配a母一光罩上的圖案結構，例如線寬與間距大小，調 整對應採用之透鏡裝置的數值孔徑，使具有局部圖案的每 一光罩對晶圓進行徽影曝光時，可於晶圓上定義具有較佳 線寬/間距解析度的圖案，並藉由該等光罩所定義之圖案的 相互層疊(overlay)，而組合成一完整電路圖案。依電路圖 案之分割方式，大致有以下兩種處理類型： 類型一：如圖1所示，當電路圖案丨具有間距較大之 獨立圖案部位11與間距較小之致密排列散圖案部位12時， 會先將該等獨立圖案部位u成型於一光罩100上，而將該 等致密排列的圖案部位12成型於另一光罩101上。 類型二：如圖2所示，當電路圖案2具有χ軸向與γ 200842500 ㈣延伸交錯之圖案時，可將電路圖案^分割成χ轴向與 Υ軸向兩部分13、14，且分別成型於一光罩1〇〇、上。 、，透過上述採甩複數個光罩100、101進行多次微影曝光 ，並配合該等光罩100、101調整透鏡（圖未示）之數值孔 徑（Numerical aperture，ΝΑ }，來將一電路圖案i分區分次 微影複製至晶圓（圖未示）的方式，雖然可提高每一光罩 …1〇〇、101於晶圓上所定義的圖案品質，但因每次微影製程 都必須更換多數値光罩100、1〇1，所以該等光罩ι〇〇、ι〇ι • 、晶圓間容易因為相互對位不準，而造成該等光罩1〇〇、 1 〇 1刀別於Ba圓上所定義構成的電路圖案出現嚴重相對位置 - ·. · .. - 誤差，例如出現圖案斯裂或橋揍…等，因而有待改善。 【發明内容】 因此’本發明之目的’即在提供一種用於半導體光微 .— - ... · · ' .... 影製程中，可避免光罩對位不準並可於晶圓上精確定義出 電路圖案的微影曝光系統。 ... . .. .... . . ‘ 1 _ . _ .. .. .—. 統進行微影曝光之方法。 . .. . . . .... - . -- -. ... ‘ ' : ' .. - 於是，本發明徵影曝光系統，適用於設置在一半導體 製程環境中，而可對一頂面塗覆有光阻劑之晶圓進行微影 v 曝光，並包含一設置於晶圓上方並可產生射向晶圓之光線 一透鏡裝置。該光罩裝置包括一光罩，及一第一與一第二 遮光板’該光罩具有相間隔並可分别使光線往下穿透且相 配合構成一欲微影至晶圓之圖案的一第一與一第二圖案區 200842500 ，該等遮光板是可彼此替換地單獨與該光罩縱向平行排列 ，第一遮光板具有-僅使穿透該第-圖案區之光線可射向 晶圓的第-曝光區’而策二遮光板具有—僅使穿透該第二 圖案區之光線可射向晶圓的第二曝光區。該透鏡裝置包括 一設置定位於晶圓與光罩裝置間，且可使來自光罩裝置之 光線往下穿透並聚焦射向晶圓頂面之預定曝光區域=第一 _ 透鏡單元，且該第一透鏡單元之數值孔徑可隨搭配使用之 光罩與第一或第二遮光板而改變。 • 於是’本發明微影曝光方法’是以中請專利範圍第/ 項所述之微影曝光系統對一晶圓進行微影曝光，並包含以 間，踩使晶圓與光罩對位；（b)將第一遮光板與該光罩縱 向平仃排列地設置定位，並調整第一透鏡單元之數值孔徑 ，然後驅使曝光光源發光，僅使往下穿透該第一圖案區之 光線可穿透第一透鏡單元，而對晶圓進行微影曝光；及(c _ )移離第一遮光板，並將第二遮光板與光罩縱向平行排列 瞻 地設置定位，且對應調整第一透鏡單元之數值孔徑，然後 驅使曝光光源發光，僅使往下穿透該第二圖案區之光線穿 透第一透鏡單元，而對晶圓進行微影曝光。 ，【實施方式】 ..... . .... ... .: .. . ’ 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之二姆較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 200842500 明内容中，類似的元件是以相同的編號來表示。In the semiconductor lithography process, in order to accurately lithographically pattern a circuit pattern onto a wafer, a wafer pattern having a small line width and pitch (Pitch) is determined on the wafer, and the fab has been Developing a variety of different process technologies. Since the line width and spacing of the circuit pattern on the light army may have a variety of different cloth cloth conditions, in order to make the parts of the circuit pattern of the light mask accurately lithographically onto the light mask, and have better resolution, currently One of the lithography processes adopted by the fab is to divide the circuit pattern originally formed on a single reticle into several parts, and respectively form them on a reticle, and then match the pattern on the mother reticle. The structure, for example, the line width and the spacing size, adjusts the numerical aperture of the lens device corresponding to the lens device, so that each mask with a partial pattern can be defined on the wafer with a preferred line width/pitch when the wafer is exposed to the wafer. The resolution pattern is combined into a complete circuit pattern by the mutual overlay of the patterns defined by the masks. According to the way of dividing the circuit pattern, there are roughly two types of processing: Type 1: As shown in FIG. 1 , when the circuit pattern 丨 has a separate pattern portion 11 with a large spacing and a densely spaced pattern portion 12 with a small pitch, The individual pattern portions u are first formed on a mask 100, and the densely arranged pattern portions 12 are formed on the other mask 101. Type 2: As shown in FIG. 2, when the circuit pattern 2 has a pattern in which the χ axial direction and the γ 200842500 (4) are extended and interlaced, the circuit pattern can be divided into two parts 13 and 14 in the axial direction and the Υ axial direction, and respectively formed. On a light mask 1 〇〇, on. And performing multiple lithography exposure through the plurality of reticle 100 and 101, and adjusting the numerical aperture (ΝΑ) of the lens (not shown) with the reticle 100 and 101 to connect a circuit Pattern i partitioning the lithography to the wafer (not shown), although the pattern quality defined by each mask...1〇〇, 101 on the wafer can be improved, but each lithography process Most of the masks 100 and 1 必须1 must be replaced, so the masks ι〇〇, ι〇ι•, and the wafers are easily misaligned with each other, causing the masks 1〇〇, 1 〇1 The circuit pattern formed by the knife on the Ba circle has a serious relative position - -. . . . - error, such as a pattern crack or bridge, etc., and thus needs to be improved. [Summary] Therefore, the object of the present invention 'Is providing a kind of lithography exposure for semiconductor light micro---... · '.. shadow process, which can avoid the misalignment of the mask and accurately define the circuit pattern on the wafer. System. ... . . . . . . . . . . . . . . . . . . . . . 。 。 。 。 。 a photoresist coated with a photoresist on the top surface for lithography v exposure, and a lens device disposed above the wafer and capable of generating light incident on the wafer. The photomask device includes a photomask, and a photomask a first and a second pattern area 200842500, wherein the reticle is spaced apart from each other and can respectively penetrate the light and cooperate to form a pattern of lithography to the wafer. The visors are alternately arranged in parallel with the longitudinal direction of the reticle, and the first visor has - only the light penetrating the first pattern region can be directed toward the first exposure region of the wafer; and the visor has - allowing only light that penetrates the second pattern region to be directed toward the second exposure region of the wafer. The lens device includes a placement between the wafer and the reticle device and allows light from the reticle device to be lowered Penetrating and focusing a predetermined exposure area that is directed toward the top surface of the wafer = first _ lens unit, and the first lens The numerical aperture of the element can be changed according to the reticle used with the first or second visor. • The 'lithographic exposure method of the present invention' is the lithographic exposure system described in the scope of the patent application. The wafer is subjected to lithography exposure, and includes aligning the wafer with the reticle; (b) positioning the first visor and the reticle in a longitudinally aligned manner, and adjusting the value of the first lens unit The aperture, and then driving the exposure source to emit light, only the light that penetrates the first pattern region downward can penetrate the first lens unit to perform lithographic exposure on the wafer; and (c _) move away from the first visor And positioning the second visor in parallel with the longitudinal direction of the reticle, and correspondingly adjusting the numerical aperture of the first lens unit, and then driving the exposure light source to emit light, so that only the light penetrating the second pattern area is penetrated. A lens unit that lithographically exposes the wafer. [Embodiment] ..... . . . . . . . . . . . . . . The above-mentioned and other technical contents, features and effects of the present invention are preferably implemented in the following reference drawings. The detailed description of the examples will be clearly presented. Before the present invention is described in detail, it is to be noted that in the following description, the like elements are denoted by the same reference numerals.

士圖 *所示，本發明微影曝光系統之第一較佳實施 例’可以設置於半導體製程環境中，而用以對—頂面被覆 有光阻劑（圖未示）之晶圓100進行微影曝光，而於晶^ 上精確疋我出預疋之電路圖案（圖未示）。該微影曝光系統 匕3間U於晶圓1〇〇上方之並可產生曝光所需之光 的*光光源3間隔设置於曝光光源3與晶圓1 〇〇間並可 使光線穿透之透鏡裝置4，及一間隔設置於曝光光源3與晶 圓100間之光罩裝置5。 該透鏡裝置4包括上、下間隔地設置於爆光光源3下 方之第一與第二透鏡單元41、42，第―^ 定位於光罩裝置5下方，而第二透鏡單元 光罩裝置5上方’且第一透鏡單元41之數值孔徑（ Numerical·叩时槪’ να )可被調整’但實施時，該透鏡裝 置4可不δ又置光罩裝置5上方的第二透鏡單元42。由於該 曝光光源3為習知構件，且非本發明之創作重點，因此不 再詳述。 4光罩裝置5包括一光罩51、一第一遮光板52 ,及一 第二遮光板53。在本實施例中，該光罩51具有一由多數個 間距較大之圖案512組合構成之第一圖案區511，及一由多 數緊密排列之圖案514構成的第二圖案區513，且談第一圖 案區511與第二圖案區513可分別使光往下穿透，且該等圖 案區511、513相配合構成一預定微影複製到晶圓1〇〇上的 電路圖案51G。該光罩51是由_可透光材料製成之片狀光 200842500 罩本體515，及一被覆固定於光罩本體515底面之不透光第 迫光體516組合而成，且該第一遮光體516於光罩本體 515上圍繞界定出該等圖案區511、513。 該第一遮光板52具有一外型與該第一圖案區511對稱 且可使光線往下穿透之第一曝光區521，第二遮光板53則 具有一與第二圖案區513外型對稱且可使光線往下穿透之 乂第二曝光區531。該等遮光板52、53是分別由一可供光線 鲁 往下穿透之平板狀板本體522、532,及一被覆固定於板本 體522、532頂面之不透光第二遮光體523、533組合而成 ’且該第二遮光體523、533分別於相對應板本體522、532 上圍繞界定出該等曝光區521、53 1。 在本實施例中，該等遮光體516、523、533皆為金屬 鉻（Cr)，但實施時，該尊透光體M6、523、533材質皆^ 以此為限’只要可阻止曝光光源3產生的光穿透即可。 该等遮光板52、53是能夠彼此替換地單獨與該光罩51 • 向平行排列設置，當該等遮光板52、53 ^As shown in FIG. 4, the first preferred embodiment of the lithography exposure system of the present invention can be disposed in a semiconductor process environment for performing a wafer 100 having a top surface coated with a photoresist (not shown). The lithography is exposed, and on the crystal ^ I accurately pre-existed the circuit pattern (not shown). The lithography exposure system 匕 3 between the exposure light source 3 and the wafer 1 is disposed between the exposure light source 3 and the wafer 1 and can penetrate the light. The lens device 4 and a mask device 5 are disposed between the exposure light source 3 and the wafer 100. The lens device 4 includes first and second lens units 41, 42 disposed above and below the explosion light source 3 at intervals, the first portion being located below the reticle device 5, and the second lens unit above the reticle device 5' And the numerical aperture (Numerical 叩' να να ) of the first lens unit 41 can be adjusted 'But in practice, the lens device 4 can not δ the second lens unit 42 above the reticle device 5 . Since the exposure light source 3 is a conventional member and is not the focus of the present invention, it will not be described in detail. The reticle device 5 includes a reticle 51, a first visor 52, and a second visor 53. In this embodiment, the photomask 51 has a first pattern region 511 composed of a plurality of patterns 512 having a large pitch, and a second pattern region 513 composed of a plurality of closely arranged patterns 514. A pattern area 511 and a second pattern area 513 respectively allow light to pass downward, and the pattern areas 511, 513 cooperate to form a predetermined pattern to be copied onto the circuit pattern 51G on the wafer 1 . The reticle 51 is formed by combining a sheet-like light 200842500 cover body 515 made of a permeable material and a opaque damper 516 fixed to the bottom surface of the reticle body 515, and the first opaque The body 516 surrounds the mask body 515 to define the pattern regions 511, 513. The first visor 52 has a first exposure region 521 whose outer shape is symmetrical with the first pattern region 511 and allows light to pass downward, and the second visor 53 has a shape symmetry with the second pattern region 513. And the second exposure area 531 can be penetrated by the light. The visors 52, 53 are respectively a flat plate body 522, 532 for allowing the light to pass downward, and a opaque second light blocking body 523 which is fixed to the top surface of the plate bodies 522, 532, The 533 is combined and the second light-shielding bodies 523 and 533 respectively define the exposure regions 521 and 53 1 on the corresponding plate bodies 522 and 532. In the embodiment, the light-shielding bodies 516, 523, and 533 are all metallic chromium (Cr), but in practice, the light-transmitting bodies M6, 523, and 533 are all limited to each other as long as the exposure light source can be blocked. 3 The generated light can be penetrated. The visors 52, 53 are arbitrarily arranged in parallel with the reticle 51, and are arranged in parallel with each other, when the visors 52, 53 ^

縱向平行排列時，在本實施例中，是以排列設置於光罩U 5 ^ f 52 ^ 53 ^ - ^ 521 > 531 f g| t ^ 511 . 513 jLt^ 。亦即，第-遮光板52縱向平行地排列設置於光罩51下 方時，第一遮光板52之第二遮光體523會將往下穿透第二 » t ^ 513 ^ , m f itlt f - ® t ^ 511 4往下穿透第—曝光區521而射向第—透鏡單元4^^ 53 533 200842500 £ 511之光線擔住，僅讓穿透第— 弟一圖案區513之光線可往 下牙透弟一曝光區531而射向透鏡單元μ。 如圖3〜5所示，當要以上流 a 上述城影曝光系統於被覆有光 阻劑之晶圓100頂面曝光定義屮 _ 、叫'庀疋我出預定之電路圖案時，其步 驟如下： 將該微影曝光系統設置於一製程環境中， 100上方，且將曝光光源3、第二透鏡單元 步驟（一） 並對應位於晶圓When the longitudinally parallel arrays are arranged in the present embodiment, they are arranged in a mask U 5 ^ f 52 ^ 53 ^ - ^ 521 > 531 f g | t ^ 511 . 513 jLt^ . That is, when the first visors 52 are arranged in parallel in the longitudinal direction of the reticle 51, the second opaque body 523 of the first visor 52 will penetrate downwards through the second » t ^ 513 ^ , mf itlt f - ® The t ^ 511 4 penetrates the first-exposure region 521 and is directed toward the first lens unit 4^^ 53 533 200842500 £ 511, and only allows the light penetrating the pattern 513 of the first brother to be lowered. The lens is exposed to the lens unit μ by an exposure area 531. As shown in FIG. 3 to 5, when the above-mentioned flow shadow exposure system is to be used in the top surface of the wafer 100 coated with the photoresist, the definition of the top surface is defined as 屮 _ : setting the lithography exposure system in a process environment, above 100, and exposing the light source 3, the second lens unit step (1) and corresponding to the wafer

42、光罩51、第一透鏡單元41與晶圓ι〇〇上下相互對位， 使曝光光源3產生之光線可經由第二透鏡單元^往下穿透 該等谓案區511、513 〇 步驟（二）：將第一遮光板S2設置定位於光罩W下方 ，並依據曝光光源3之光線往下穿透該第一圖案區乃丨丨與該 第一曝光區時，可於晶圓1〇〇上定義出μ 間距解析度時的曝光需求，調整第一透鏡單元41之數值孔 徑（ΝΑ)’然後，驅使曝先光源3發光而開始進行第一次微 影曝光程序。 . ^ . - · -, · . . . · 藉由第一遮光板52之第二遮光體523將往下穿透第二 圖案區513之光線擋住，僅讓穿透該第一圖案區511之光線 往下穿透第一曝光區521，並被預定數值孔徑之第一透鏡單 元41聚焦，而對晶圓loo頂面預定區域之光阻劑進行微影 曝光，進而於晶圓100上定義出一與該第一圖案區511外型 相對應之微小圖案（圖未示）。 V驟（二）·關閉曝光光源3，並將第 < 遮光板52移離 光罩51下方’再將第二遮光板53設置定位於光罩51下方 10 200842500 ，且依據曝光光源3之光線往下穿透第二圖案區513與第 二遮光板53之該第二曝光區531時，可產生最佳圖案線寬/ 間距解析度時的曝光需求，調整第一透鏡單元41之數值孔 徑（NA)，然後，驅使曝光光源3發光而開始進行第二次微 影曝光程序。 藉由第二遮光板53之第二遮光體533將穿透光罩51 之第一圖案區511的光線擋住，僅讓穿透第二圖案區513之 … 光線往下穿透，並被預定數值孔徑之第一透鏡單元聚焦 _ ’而對晶圓100頂面預定區域之光阻劑進行微影曝光，進 而於晶圓100上定義出一與第二圖案區513外型相對應的 另一微小圖案（圖未示）。 此時，步驟（二）與步驟（三）於晶圓100 :上所定義 :出之微小圖案的組合，即為該光罩Η之電路圖案510的微 、、瓶版透過重複上述步驟，便可將光罩51之電路圖案Ho 微縮複製至晶圓1〇〇各部位。 100 —直保持相互定位不動的狀態，僅進行該尊遮光板52 、53之抽換，所以除了可避免習知抽換光罩所產生之對位 而4成的圖案相對位置層疊錯誤（ overlay error)夕卜 〔了透過調整第一透鏡之數值孔徑的設定，同時提升 每人微〜曝光製程於晶圓1〇〇上定義出之電路圖案的線寬/ 間距解析度。 、在本實施例中，共設置有兩片遮光板52、53，並藉由 :遍光板52、53之該等曝光區521、531的結構設計， 200842500 . · - - . 纟將穿透料51之光線區分成兩部分，而可分別於晶圓 _上定義出不同圖案。但實施時’遮光板數量可依光軍 51之該尊圖案區的分割設計而增加，例如可採用五片遮光 板來將光軍5|之電路圖案510區分成五個獨立部分，並藉 由五次微影曝光的步驟，將電路圖案51G分區微影於晶圓 100 上。 -另外，本實施例之光罩51是設置於該等遮光板52、53 論 上方，使得曝光光源3的光會先穿透該等圖案區511、513 • 後，再被下方之第一或第二遮光板52、 施哼，亦可將該等遮光板52、53縱向平行排列地分別設置 ;光^ 51上方’以第一遮光板Μ為例，第一遮光板η可 先將往下射向光罩51之第二圖案區513的光線預先播住， 僅使穿透該第一曝光區521的光線能往下繼續穿透該第一 圖案區511，而射向第一透鏡單元41，並可藉由調整第一透 ，單元41之數值孔徑，而於晶圓1⑼上定義出具有較佳線 • 見/間距解析度之圖案’所以同樣可藉由該等遮光板52、53 之二次分區曝光步驟來提升微影曝光之品質。 再者’光罩51、第一遮光板52與第二遮光板53之縱 向排歹j方式可依需要而改變，不以上述型態為限。 如圖Λ、7所示，本發明微影曝光系統第二較佳實施例 皋第一貫施例差異處僅在於:該光罩裝置5之結構設計。 為方便5兄明，在以下說明中將僅針對本實施例與第一實施 例差異處進行說明。 -—:. 圓- : . 圓, . 在本實施例中，同樣是以光罩51設置於該等遮光板52 ' . V . , . ' - • · ' . ... .... , . - ' ' 12 200842500 、53上方為例進行說明。該光罩具一多數χ _ 伸之圖案構成的楚一固点 夕数，口 X軸向延 延伸之圖案514 案區511 ’及—由多數沿γ軸向 η 所構成的第二圖案區5丨3，且第一圖案區 〜之部分圖案512會與第二圖案區513之圖案514連^ 弟^板52之第一曝光區52卜外型是與第-圖案區511 广:對=▼將往下穿透第二圖案區513之光線擔住，僅 讓牙透弟一圖案區511之光線可往下繼續穿透第一曝光區42. The reticle 51, the first lens unit 41 and the wafer ι are aligned with each other, so that the light generated by the exposure light source 3 can penetrate the symmetry regions 511, 513 through the second lens unit. (2): positioning the first visor S2 under the reticle W, and according to the light of the exposure light source 3, penetrating the first pattern region and the first exposure region, The exposure requirement when the μ pitch resolution is defined is adjusted, and the numerical aperture (ΝΑ) of the first lens unit 41 is adjusted. Then, the exposure light source 3 is driven to emit light to start the first lithography exposure process. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The light penetrates through the first exposure region 521 and is focused by the first lens unit 41 of the predetermined numerical aperture, and the photoresist is fixed to the predetermined area of the top surface of the wafer loo, and is further defined on the wafer 100. A minute pattern (not shown) corresponding to the shape of the first pattern region 511. V (2) · Turn off the exposure light source 3, and move the < visor 52 away from the reticle 51' and then position the second visor 53 under the reticle 51 10 200842500, and according to the light of the exposure light source 3 When the second pattern region 513 and the second exposure region 531 of the second light shielding plate 53 are penetrated downward, the exposure requirement when the optimum pattern line width/space resolution is generated can be adjusted, and the numerical aperture of the first lens unit 41 is adjusted ( NA), then, the exposure light source 3 is driven to emit light to start the second lithography exposure process. The light blocking the first pattern region 511 of the reticle 51 is blocked by the second light blocking body 533 of the second visor 53 so that only the light penetrating the second pattern region 513 penetrates downward and is predetermined. The first lens unit of the aperture is focused _' and the photoresist of the predetermined area on the top surface of the wafer 100 is subjected to lithography exposure, thereby defining another tiny corresponding to the appearance of the second pattern area 513 on the wafer 100. Pattern (not shown). At this time, the steps (2) and (3) are defined on the wafer 100: the combination of the tiny patterns, that is, the micro-pattern of the mask pattern 510 of the mask, and the bottle plate repeats the above steps. The circuit pattern Ho of the mask 51 can be micro-copied to each part of the wafer. 100—The state in which the positioning of the visors 52 and 53 is only performed is maintained, so that the alignment of the relative positions of the patterns of the reticle can be avoided. In addition, by adjusting the numerical aperture of the first lens, the line width/space resolution of the circuit pattern defined on the wafer 1 每人 is increased at the same time. In the present embodiment, two visors 52, 53 are provided in total, and the structural design of the exposure regions 521, 531 of the illuminating plates 52, 53 is used, 200842500. · - - . The light of 51 is divided into two parts, and different patterns can be defined on the wafer_. However, the number of visors can be increased according to the division design of the pattern area of the Guangjun 51. For example, five visors can be used to divide the circuit pattern 510 of the ray 5 into five independent parts. The fifth lithography exposure step lithographically patterns the circuit pattern 51G onto the wafer 100. In addition, the reticle 51 of the embodiment is disposed above the opaque plates 52, 53 so that the light of the exposure light source 3 first penetrates the pattern regions 511, 513 • and then is first or below The second visor 52, the visor, may also be arranged in parallel in the longitudinal direction of the visors 52, 53; above the light 51 51, taking the first visor Μ as an example, the first visor η may first go down The light that is incident on the second pattern area 513 of the reticle 51 is pre-sown, so that only the light that penetrates the first exposure area 521 can continue to penetrate the first pattern area 511 and be directed toward the first lens unit 41. And by adjusting the numerical aperture of the first transparent unit 41, a pattern having a preferred line/pitch resolution is defined on the wafer 1 (9), so that the visors 52, 53 can also be used. A secondary partition exposure step to improve the quality of the lithography exposure. Further, the manner in which the photomask 51, the first visor 52, and the second visor 53 are longitudinally arranged may be changed as needed, and is not limited to the above-described type. As shown in FIG. 7 and 7, the second preferred embodiment of the lithographic exposure system of the present invention differs only in the structural design of the reticle device 5. In the following description, only the differences between the present embodiment and the first embodiment will be described in the following description. -—:. Circle - : . Circle, . In this embodiment, the mask 51 is also disposed on the visor 52 ' . V . , . ' - • · ' . . . - ' ' 12 200842500 , 53 above for an example. The reticle has a plurality of χ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _丨3, and the partial pattern 512 of the first pattern area ～ is connected with the pattern 514 of the second pattern area 513. The first exposure area 52 of the panel 52 is wider than the first pattern area 511: pair = ▼ The light that penetrates the second pattern area 513 is carried up, and only the light of the pattern area 511 of the tooth-passing can continue to penetrate the first exposure area.

521而射向第―透鏡單^ 41。第二遮光板53之第二曝光區 办^類疋與第二圖案區513外型上下對稱，&可將往下 穿透第—®案區511之光線擔住’僅讓穿透第二圖案區5 i 3 之光線可往下繼續穿透第二曝光區531而射向第一透鏡單 元41 〇 藉由上述先罩51與該等遮光板％、μ之結構設計， 同樣了透過上述彳政影光方法，分別將光罩之第一與第二 圖案區511、513所構成之圖案微縮複製至晶圓ι〇〇上。同 樣的，該等光罩51與該等遮光板52、53亦可依照第一實 施例所述之各種組合方式進行組合排列，不再贅述。 歸納上述，藉由該等遮光板52、53可分別用以擋住穿 透光罩51之第二與第一圖案區513、511的光線，或預先將 射向該等第二或第一圖案區513、511之光線分別擋住的分 次分區曝光設計，可在不改變光罩51與晶圓丨〇〇之相對位 置的情況下，將光罩51上的電路圖案51〇分區地精確微影 至晶圓100上，所以可明顯改善習知變換光罩之缺點。 、並可於每次微影曝光製程中，依據對應組合之該等圖 13 200842500 案f51；、5】3與曝光區mi之圖案寬度與間距大小， 周正第透鏡早70 41之數值孔徑，使得s次微影曝光皆 可於晶圓I 〇〇上定羞Ψ 1 士 義出/、有較么線覓/間距解析度的圖案， 而相對提高晶圓100藏氺口所 m 曝光口口貝。因此確實可達到本發明之 目的。521 is directed to the first lens unit 41. The second exposure area of the second visor 53 and the second pattern area 513 are vertically symmetrical, and the light that can penetrate the ～ § 511 can be carried only to penetrate the second The light of the pattern area 5 i 3 can continue to penetrate the second exposure area 531 and be directed to the first lens unit 41. The structure of the first cover 51 and the light shielding plates % and μ are similarly designed, and the same The government image method directly copies the pattern formed by the first and second pattern regions 511 and 513 of the mask onto the wafer. Similarly, the reticle 51 and the visors 52 and 53 may be arranged in combination according to various combinations described in the first embodiment, and details are not described herein. In summary, the visors 52, 53 can be used to block the light passing through the second and first pattern regions 513, 511 of the reticle 51, respectively, or to be directed to the second or first pattern regions. The split-area exposure design in which the rays of 513 and 511 are respectively blocked can accurately measure the circuit pattern 51 on the mask 51 to the region without changing the relative position of the mask 51 and the wafer cassette. On the wafer 100, the disadvantages of the conventional conversion mask can be significantly improved. And in each lithography exposure process, according to the corresponding combination of the Figure 13 200842500 case f51;, 5] 3 and the exposure area mi pattern width and spacing size, Zhou Zhengdi lens early 70 41 numerical aperture, so that s lithography exposure can be shaved on the wafer I Ψ 1 士义出 /, have a more 觅 / spacing resolution pattern, and relatively improve the wafer 100 氺 mouth m exposure mouth . Therefore, the object of the present invention can be achieved.

It以上所述者，僅為本發明之二較佳實施例而已，當 不能以此限定本获明鲁A +狄 ^月貫苑之轭圍，即大凡依本發明申請專 利範圍及發明說明内n你令鸲 門合所作之間早的專效變化與修飾，皆 仍屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 ® 1 ^ f ^ # ^ t ^ t > ^ f ^ ^ ^ ^ ^ 罩上的俯視示意圖； 圖2疋類似圖丨之視屬’說明另一種電路圖案分割類 型； 圖3疋本發明微影曝光系統之第一較佳實施例與一晶 圓搭配使用時的立體示意圖，說明以一光罩妒置=一 遮光板進行微影曝光時的情況；、 ' ...... ..V: ... , ..... . 圖4是類似圖3之|圖’說明以光罩裝置之—第二遮 光板進行微影曝光時的猜況； 圖5是本發明微影曝光方法之較佳實施例的步驟流程 圖； 圖6是本發明微影曝光系統之第二較佳實施何與一晶 圓搭配使用時的立體示意圖，說明以一光罩裝置之一第一 遮光板進行微影曝光時的情況；及 200842500 圖7是類似圖6之視圖，說明以光罩裝置之一第二遮 光板進行微影曝光時的情況。It is only the preferred embodiment of the present invention, and it is not possible to limit the yoke of the Ming Lu A + Di ^ Yue Guan Yuan, that is, the scope of the patent application and the description of the invention according to the present invention. n You will make early changes and modifications between Tuen Mun and you are still covered by the patents of this invention. [Simple description of the diagram] ® 1 ^ f ^ # ^ t ^ t > ^ f ^ ^ ^ ^ ^ Schematic diagram of the top view; Figure 2 疋 疋 疋 ' ' 说明 说明 说明 说明 另一 illustrate 3D is a perspective view of a first preferred embodiment of the lithography exposure system of the present invention when used in conjunction with a wafer, illustrating a lithographic exposure with a reticle = a visor; [... .....V: ... , ..... Figure 4 is a view similar to Figure 3 of Figure 3 illustrating the lithography exposure of the second visor of the reticle device; Figure 5 is FIG. 6 is a schematic perspective view of a second preferred embodiment of the lithography exposure system of the present invention when used in conjunction with a wafer, illustrating a photomask device A case where a first visor is subjected to lithography exposure; and 200842500. Fig. 7 is a view similar to Fig. 6, illustrating a case where lithography exposure is performed by a second visor of the reticle device.

15 200842500 【主要元件符號說明】 100···· ...晶圓 514···· ...圖案 3 ....... …曝光光源 515 .... …光罩本體 4 ······· …透鏡裝置 516.··· …第一遮光體 41...... .··第一透鏡單元 52······ ...第一遮光板 42...... …第二透鏡單元 521 .... …第一曝光區 5 ....... …光罩裝置 522 .... η ...板本體 51·.···· ...光罩 523 .... ...第二遮光體 510···· …電路圖案 53...... ...第二遮光板 511 .... ...第一圖案區 531 .... ...第二爆光區 512···· ,…圖案 532···· ...板本體 513.... ....第二圖案區 533 .... .第二遮光體 1615 200842500 [Description of main component symbols] 100····...wafer 514·····pattern 3 .............exposure light source 515 .......mask body 4 ·· ····· ... Lens device 516..... First light-shielding body 41... First lens unit 52... First light-shielding plate 42... ...the second lens unit 521 ..... first exposure area 5 .... reticle device 522 .... η ... board body 51 ·..... . Photomask 523 .... ... second light shielding body 510 ... ... ... circuit pattern 53 ... ... second light shielding plate 511 .... ... first pattern area 531 .... ...second exploding area 512····,...pattern 532···· board body 513.....second pattern area 533 ..... second Light shield 16

Claims (1)

200842500 十、申請專利範圍： I —種微影曝光系統，適用於設置在一半導體製程環境中 ’而可對一頂面塗覆有光阻劑之晶圓進行微影曝光，並 包含： 一曝光光源，設置於晶圓上方並可產生射向晶圓之 光線; 一光罩裝置，設置於曝光光源與晶圓間，包括一光 罩，及一第一與一第二遮光板，該光罩具有相間隔並可 分別使光線往下穿透且相配合構成—欲微影至晶圓之圖 案1一第一與一第二圖案區，該等遮光板是可彼此替換 地早獨與該光罩縱向平行排列，第一遮光板具有—僅使 穿透該第一圖案區之光線可射向晶圓的第一爆光區，而 第二遮光板具有一僅使穿透該第二圖案區之光線可射向 晶圓的第二曝光區；及 一透鏡裝置，包括一設置定位於晶圓與光罩裝置間 ，且可使來自光罩裝置之光線往下穿透並聚焦射向晶圓 頂面之預定曝光區域的第一透鏡單元，且該第_填鏡單 7G之數值孔徑可随搭配使用之光罩與第_或第二遮光板 而改變。 2. 依據申請專利範圍第丨項所述之微影曝光系統，其中， 該光罩是設置定位於第一或第二遮光板上方，且曝光光 源之光線可往下穿透該尊圖案區。 3. 依據申請專利範圍第丨項所述之微影曝光系統，其中， 第一與第二遮光板是可替換地單獨設置於光罩上方，而 17 200842500 - ； - .- . 可分別阻止爆光光源之光線往下穿透第二圖案區與第一 圖案區。 ， 4.依據申請專利範圍第2或3項所述之微影曝光系統，其 中，該等遮光板之第一與第二曝光區外型是分別和第二 與第二圖案區上下相對稱而可分別使第一與第二圖案區 分別微影至晶圓上。 5·依據申請專利範圍第4項所述之微影曝光系統，其中， • 光罩之第一圖案區是由多數個間距較大之圖案組合而成 . ’第二圖案區是由多數間距較小且緊密排列之圖案組合 而成。 6.依據申請專利範圍第4項所述之微影曝光系統，其中， 光罩之第一圖案區是由多數沿乂軸向延伸之圖案組舍構 成’第二圖案區是由多數沿γ軸向延伸之圖案組合構成 - · . . . . ... -V . . . '： ... .1 . : . 4 · · . ·.. f. · · ..····. - . · · . ' . ' - - · -·. . . . : 7·依據申請專利範圍第6項所述之微影曝光系統,其中， . - · . 第一圖案區之部分圖案是與第二圖案區之圖案連接。 春8 ·依據申請專利範圍第丨項所述之微影曝光系統，其中， 该透鏡單元更包括一設置定位於曝光光源與光罩裝置間 ’而可使曝光光源之光線往下穿透並射向曝光裝置的第 • . - - * . - —二透鏡單元。 _ . . .9·——種微影曝光方法，是以申請專利範圍第q項所述之微 影曝光系統對一晶圓進行微影曝光，並包含以下步驟: • . . ' ... ' (a)將該光罩設置定位於一曝光光源與一透鐃裝置: 間，並使晶圓與光罩對位; 18 200842500 (b) 將第遮光板與該光罩縱向平行排列地設置定 位JL調正第透鏡單凡之數值孔徑，然後驅使曝光光 f f - W ^r_ 透鏡單兀，而對晶圓進行微影曝光·，及 (c) 私離第一遮光板，並將第二遮光板與光罩縱向 平行㈣地設置定位，且對應調整第—透鏡單元之數值 - 孔钇/後驅使曝光光源發光，僅使往下穿透該第二圖 • 案區之光線牙透第一透鏡單元，而對晶圓進行微影曝光 ι . . . . . . * . · . . 10.依據申請專利範圍第9項所述之微影曝光方法，其中， 步驟（b)是將第一遮光板設置定位於光罩下方，而可將 往下穿透該第二圖案區之光線擋住，僅讓穿透該第一圖 案區之光線可往下穿透第一透鏡單元。 11·依據申請專利範圍第9項所述之微影曝光方法，其中， 步驟（b)是將第一遮光板設置定位於光罩上方，而可預 • 先將往下射向該第二圖案區之光線擋住，讓往下穿透之 光線僅可穿透談第一圖案區而射向第一透鏡單元。 其中，步驟（C)是將第二遮光板設置定位於光罩下方， 而可將往下穿透該第一圖案區之光線擋住，僅讓穿透該 第二圖案區之光線可往下穿透第一透鏡單元。 13.依據申讀專利範圍第1〇或力項所述之微影曝光方法， 其中’步驟（c)是將第二遮光板設置定位於光罩上方， 而可預先將往下射向該第一圖案區之光線擋住，讓往下 19 200842500 穿透之光線僅可穿透該第二圖案區而射向第一透鏡單元 20200842500 X. Patent application scope: I - a lithography exposure system, suitable for setting in a semiconductor process environment, and lithographically exposing a wafer coated with a photoresist on the top surface, and comprising: an exposure a light source disposed above the wafer and capable of generating light incident on the wafer; a photomask device disposed between the exposure light source and the wafer, including a photomask, and a first and a second light shielding plate, the photomask Having a spacing and respectively allowing the light to penetrate downwardly and cooperating to form a pattern 1 to a first pattern and a second pattern area to be lithographically printed to the wafer, the light shielding plates being replaceable with each other The cover is arranged in parallel in the longitudinal direction, and the first visor has a light ray that penetrates the first pattern area to be directed toward the first blasting area of the wafer, and the second visor has a surface that only penetrates the second pattern area Light can be directed to the second exposure region of the wafer; and a lens device includes a positioning between the wafer and the reticle device, and the light from the reticle device can be penetrated downwardly and focused toward the top of the wafer First lens sheet of the predetermined exposure area of the face And the numerical aperture of the first Mirror 7G can be changed with the reticle and the _ or second visor used together. 2. The lithography exposure system of claim 2, wherein the reticle is disposed above the first or second visor, and the light of the exposure light source can penetrate the stencil region downward. 3. The lithography exposure system of claim 2, wherein the first and second visors are alternatively disposed separately above the reticle, and 17 200842500 - ; - .- . The light of the light source penetrates the second pattern area and the first pattern area downward. 4. The lithography exposure system of claim 2, wherein the first and second exposure regions of the visors are symmetrical with the second and second pattern regions, respectively. The first and second pattern regions may be separately lithographically onto the wafer. 5. The lithography exposure system according to claim 4, wherein: • the first pattern area of the mask is composed of a plurality of patterns having a larger pitch. The second pattern area is formed by a plurality of spaces. A small and closely arranged pattern is combined. 6. The lithography exposure system according to claim 4, wherein the first pattern area of the reticle is composed of a plurality of patterns extending along the 乂 axial direction, and the second pattern area is formed by a majority along the γ axis. Forming a combination of extended patterns - · . . . . -V . . . ': . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . · · . . . - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - The pattern of the pattern area is connected. The lithography exposure system according to the application of the invention, wherein the lens unit further comprises a positioning between the exposure light source and the reticle device to allow the light of the exposure light source to penetrate downward and shoot To the exposure device, the . . - - * . - two lens unit. _ . . . . . . - lithography exposure method, the lithography exposure system described in the patent application scope q to the lithography exposure of a wafer, and the following steps: • . . . ' (a) locating the reticle to an exposure source and a permeable device: and aligning the wafer with the reticle; 18 200842500 (b) arranging the visor in parallel with the reticle longitudinally Positioning the JL to correct the numerical aperture of the lens, then driving the exposure light ff - W ^r_ lens to uniform the wafer, lithographically exposing the wafer, and (c) secluding the first visor, and second The visor is positioned parallel to the longitudinal direction of the reticle (four), and the value of the first lens unit is adjusted correspondingly - the aperture/rear drive causes the exposure light source to illuminate, and only the light penetrating through the second image is penetrated first. The lens unit is subjected to a lithographic exposure to the wafer, and the lithography exposure method according to claim 9, wherein the step (b) is the first The visor is disposed to be positioned below the reticle, and can penetrate the light of the second pattern area downward Live, so that the light penetrates only a first pattern region can penetrate down to the first lens unit. The lithography exposure method according to claim 9, wherein the step (b) is to position the first visor over the reticle, and the reticle may be directed downward toward the second pattern. The light of the area is blocked, so that the light penetrating downward can only penetrate the first pattern area and be directed to the first lens unit. Wherein, the step (C) is to position the second visor plate under the reticle, and block the light that penetrates the first pattern area downward, so that only the light penetrating the second pattern area can be worn down. Through the first lens unit. 13. The method according to claim 1, wherein the step (c) is to position the second visor above the reticle, and to shoot the ray downward toward the first The light of a pattern area is blocked, so that the light penetrating through the next 19 200842500 can only penetrate the second pattern area and be directed to the first lens unit 20