TW200835801A

TW200835801A - Non-contact process kit

Info

Publication number: TW200835801A
Application number: TW96148309A
Authority: TW
Inventors: Karl Brown; Puneet Bajaj
Original assignee: Applied Materials Inc
Priority date: 2006-12-19
Filing date: 2007-12-17
Publication date: 2008-09-01
Also published as: TWI488986B

Abstract

A process kit for use in a physical vapor deposition (PVD) chamber, along with a PVD chamber having a non-contact process kit are provided. In one embodiment, a process kit includes a generally cylindrical shield that has a substantially flat cylindrical body, at least one elongated cylindrical ring extending downward from the body, and a mounting portion extending upwards from an upper surface of the body. In another embodiment, a process kit includes a generally cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, at least one downwardly extending u-channel coupled to an outer portion of the body, an inner wall extending upward from an upper surface of an inner region of the body, and a substrate support ledge extending radially inward from the inner wall.

Description

200835801 九、發明說明：【發明所屬之技術領域】本發明大致關於半導體製程處理室之製程套組以有製程套組之半導體製程處理室。更明確具 & ，本發明關於一製程套組（pr〇cess kit) ’其·包括適用於物理氣相沈積處理室之環部（ring)及遮蔽件（shield)。、& 【先前技術】物理氣相沈積（PVD)或濺鍍為製造電子电丁 70件的常用製程之一。物理氣相沈積係於真空處理室中 _ 王丁運仃之電漿製程，其中在真空處理室中受負偏壓之靶材係暴露於一含有重原子（如，氬（A〇或包含此種惰性氣體之翕礼篮處合物）惰性氣體的電壓中。惰性氣體離子轟擊靶材後會將靶材材料原子擊射出。擊射出的原子則在處理室内基材支標座上的基材上累積成沈積薄膜。製程組件可放置於處理室中以便在處理室内相對於美材之一所欲區域中定義出製程區域。該製程套組一、、力又包括一遮蓋環、一沈積環及一接地遮蔽件。將電漿尽擊射出的原子限定在製程區域中有助於維護處理室中的其他元件文沈積材料的影響，並更有效的利用靶材材料以使較高比例的擊射原子沈積在基材上。遮蓋環（cover ring)另可避免基材支撐座周圍的沈積。該遮蓋環也可協助控制基材选緣處或下方的沈積。200835801 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention generally relates to a semiconductor process chamber for a process set of a semiconductor process chamber and a process kit. More specifically, the present invention relates to a pr〇cess kit which includes a ring and a shield suitable for a physical vapor deposition process chamber. & [Prior Art] Physical vapor deposition (PVD) or sputtering is one of the common processes for making electronic components. Physical vapor deposition is in a vacuum processing chamber. The plasma process in which the negatively biased target in the vacuum processing chamber is exposed to a heavy atom (eg, argon (A 〇 or contains such inertia). The gas is placed in the pressure of the inert gas. The inert gas ions bombard the target and will atomize the target material. The atom that is emitted is accumulated on the substrate on the substrate holder in the processing chamber. Forming a film. The process component can be placed in the processing chamber to define a process area in a desired area of the processing chamber relative to one of the materials. The process kit includes a cover ring, a deposition ring, and a Grounding shield. Limiting the atomic emission of the plasma to the process area helps to maintain the influence of other component deposition materials in the processing chamber, and more efficient use of the target material to enable a higher proportion of shot atoms. Deposited on the substrate. The cover ring also prevents deposition around the substrate support. The cover ring also assists in controlling the deposition at or below the substrate edge.

200835801 關鍵尺寸的縮減使得處理室内的污染備受支撐座在傳送及處理位置間上升及下降使此有週期性的接觸，使傳統設計已成為可負此外，由於傳統遮蔽環設計通常未與 • (例如處理室壁或基材支撐座），故遮蔽環環期間可能會變動。加熱及冷卻遮蔽環會積材料中的應力，使得受應力材料有剝落 Φ 子。因此，本案發明人認為若製程套組能將非常有幫助。因此’業界對於改良的製程套組仍有【發明·内容】本發明大致提供一用於物理氣相沈積的製程套組’以及一具有交插製程套 process kit)的物理氣相沈積處理室。於一程套組包括一交插（interleaving)沈積環及沈積環經配置具有大的機座接觸面及數個 (buttons)。該交插沈積環及接地遮蔽件裝處理室後較佳係與基材支撐機座及處理室進良好且可預測的控制溫度，進而將沈積程污染最小化。此外，在物理氣相沈積處間該—交插沈積環及接地遮蔽件較佳係設觸’故可排除傳統設計中因所產生粒子的於一實施例中，本發明之製程套組大重視。由於基材環部及遮蔽件彼 L的特定污染源。溫度控制源連接的温度在製程德增加遮蔽環上沈的傾向而形成粒減少處理室污染需求。 (PVD)處理室組（interleaving 實施例中，一製接地遮蔽件D該基材支撐扣狀部入物理氣相沈積壁接觸’以便促其上之薄膜的製理室内的使用期置成不會··相—互接潛在污染。 .致包括一具有實 200835801 質平坦柱形本體的柱形遮蔽件、至少一由該本體向下延伸之細長柱形環、以及一由該本體之一上表面向上延伸的安裝部。200835801 The reduction in critical dimensions has made the contamination in the process chamber rise and fall between the transfer and processing positions, making this periodic contact, making the traditional design a negative, in addition to the traditional shadow ring design is usually not with For example, the chamber wall or the substrate support base may be changed during the shadow ring. Heating and cooling the shadow ring accumulates stress in the material, causing the stressed material to peel off the Φ sub. Therefore, the inventor of the case believes that if the process kit can be very helpful. Therefore, the industry still has an improved process kit. [Invention and Content] The present invention generally provides a process kit for physical vapor deposition and a physical vapor deposition processing chamber having a process kit. The process kit includes an interleaving deposition ring and a deposition ring configured to have a large contact surface and a plurality of buttons. The interleaved deposition ring and the grounding shield are preferably placed in the processing chamber to provide a good and predictable temperature control of the substrate support frame and the processing chamber, thereby minimizing deposition process contamination. In addition, in the embodiment, the intervening deposition ring and the grounding shielding member are preferably in contact with each other in the conventional design, and the process set of the present invention is greatly emphasized. . Due to the specific source of contamination of the substrate ring and the shield. The temperature at which the temperature control source is connected increases the tendency of the shadow ring to sink and the granules reduce the contamination of the processing chamber. (PVD) treatment chamber group (in the embodiment of the interleaving, the grounding shield D is the substrate supporting the button into the physical vapor deposition wall contact) so as to promote the use period of the film in the processing chamber · Phase-interconnecting potential pollution. Included is a cylindrical shield having a solid flat cylindrical body of 200835801, at least one elongated cylindrical ring extending downwardly from the body, and an upper surface of the body An upwardly extending mounting portion.

於另一實施例中，一製程套組包括一大致柱形的沈積環。該沈積環包括一實質平坦的柱形本體、至少一向下延伸耦接至該本體之一外部的U形通道、一由該本體一内部區域之一上表面向上延伸的内壁、以及一由該内壁徑向朝内延伸的基材支撐突出部。於又另一實施例中係提供一物理氣相沈積處理室，其包括一交插接地遮蔽件及沈積環，其經配置於物理氣相沈積處理室使用期間不相互接觸。【實施方式】本發明大致提供一用於物理氣相沈積（PVD)處理室之製程套組。該製程套組較佳之處在於不易產生特定污染，進而促進製程均勻性與再現性以及較長製程元件的生命週期。第1圖繪示一具有製程套組114實施例的例示性半導體製程處理室150。該製程套組114包括一交插沈積環102 及接地遮蔽件 162。可受惠於本發明之一製程處理室範例為加州聖塔克拉拉市應用材料公司所提供之 IMP VECTRA™PVD製程處理室。然應理解的是其他製造商..所. 提供的其他製程處理室也可受惠於本發明。例示性製程處理室.1 5 0包括一製程處理室本體1 5 2，. 7In another embodiment, a process kit includes a substantially cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, at least one U-shaped channel extending downwardly coupled to an outer portion of the body, an inner wall extending upward from an upper surface of the inner region of the body, and an inner wall The substrate extending radially inward supports the protrusion. In yet another embodiment, a physical vapor deposition processing chamber is provided that includes an interleaved ground shield and a deposition ring that are configured to be in contact with each other during use of the physical vapor deposition processing chamber. [Embodiment] The present invention generally provides a process kit for a physical vapor deposition (PVD) processing chamber. The process kit is preferred in that it is less prone to specific contamination, thereby promoting process uniformity and reproducibility and the life cycle of longer process components. FIG. 1 illustrates an exemplary semiconductor process chamber 150 having an embodiment of a process kit 114. The process kit 114 includes an interleaved deposition ring 102 and a ground shield 162. An example of a process chamber that can benefit from the present invention is the IMP VECTRATMPVD process chamber available from Applied Materials, Inc. of Santa Clara, California. It should be understood that other process chambers provided by other manufacturers may also benefit from the present invention. An exemplary process chamber. 1 50 includes a process chamber body 1 5 2,. 7

200835801 其具有一底部154、一蓋組件156及數個側壁158以界定出一可抽空的内部體積160。該處理室本體150大致由不鏽鋼的焊接板或整體鋁塊製成。該等側壁158大致包含一可密封的存取埠口（未示出）以提供基材104由製程處理室 I 5 0的入口及出口。設於該等側壁1 5 8中的抽吸埠1 2 2係耦接至抽吸系統1 2 0，以抽空並控制内部體積1 6 0的屋力。該處理室150的蓋組件156大致支撐該環形遮蔽件152，其與沈積環I 02交插以將内部體積1 60中形成的電裝限定在基材1 0 4上方的區域。機厓、、且件1〇〇係由處理室15〇底部支撐。該機座組件100在製程期間可支撐沈積環1〇2與基材ι〇4。該機座、、且件100係藉一升舉機構118耦接至處理室150的底部 154’該升舉機構係經配置以將機座組件移動於上方位置（如圖所示）及下方位置之間。於上方位置處，該沈積環 102係以間隔關係與遮蔽件162交插。於下方位置處，該沈積環102則與遮蔽件⑹分開，以讓基材104能由處理通過該沈積環102及遮蔽件162之間側壁158所設的存取埠移出。此外，於、下方位置處，升舉銷（於第2圖所八門、機座組件100移動以將基材104與機座组件100 刀開’以利用製程處理室j s n k 葉式機械臂，未示出）交換卜1設的晶圓傳送機構（如單機座―及處理= 的内部體積…與機座=之間，以將處理室本體-152 開。件10〇的外部及處理室外部隔絕200835801 has a bottom 154, a cover assembly 156 and a plurality of side walls 158 to define an evacuatable interior volume 160. The process chamber body 150 is generally made of a stainless steel welded plate or a unitary aluminum block. The side walls 158 generally include a sealable access opening (not shown) to provide access and exit of the substrate 104 from the process chamber I 50 . A suction 埠 1 2 2 disposed in the side walls 158 is coupled to the suction system 120 to evacuate and control the internal volume of the internal volume of 160. The lid assembly 156 of the processing chamber 150 generally supports the annular shield 152 that intersperses with the deposition ring I 02 to define an electrical component formed in the interior volume 160 to a region above the substrate 104. The machine cliff and the piece 1 are supported by the bottom of the processing chamber 15 . The base assembly 100 can support the deposition ring 1〇2 and the substrate ι4 during the process. The base, and the member 100 is coupled to the bottom 154' of the processing chamber 150 by a lifting mechanism 118. The lifting mechanism is configured to move the base assembly to an upper position (as shown) and a lower position. between. At the upper position, the deposition ring 102 is interposed with the shield 162 in a spaced relationship. At the lower position, the deposition ring 102 is separated from the shield (6) to allow the substrate 104 to be removed by the access ports disposed through the sidewalls 158 between the deposition ring 102 and the shield 162. In addition, at the lower position, the lift pin (the eight doors in Figure 2, the base assembly 100 moves to open the base 104 and the base assembly 100) to utilize the process chamber jsnk leaf-type robot arm, Shown that the wafer transfer mechanism (such as the stand-alone seat and the internal volume of the process = and the stand =) is exchanged to open the process chamber body - 152. The exterior of the device 10 及 is isolated from the outside of the process chamber.

200835801 該機座組件1〇0大致包括一基材支撐件i4〇，盆封地輕接至-平台外罩108β該平台外罩ι〇8通常由不鏽鋼或鋁的金屬材料製成。冷卻124則通常設於台外罩1 08内以便熱調節基材支撐件1 40。可受惠於明的機座組件100係描述於1 996年4月16曰 Davenport等人之美國專利第55〇7499號案中。該基材支撐# 140可由銘或陶究材料製成。該某樓件可為靜電吸座、陶莞體、加熱器或其組：：實施例中’該基材支料14〇為—包括介電本體1〇6 電吸盤’該介電本體巾时有導電層112。該介電本楚通常由高導熱介電材料製成’例如熱解氮化硼、氮化氮化矽、鋁或等同材料。蓋組件156大致包括一蓋件13〇、一靶材&、一物182及一磁，管134。該蓋件13〇在處於關閉位置由數個側壁158支撐，如第！圖所示。密封件136係間距物182及蓋件13〇與側壁158之間，以避免真空間洩漏。 /' 該靶材132耦接至蓋件130並暴露於製程處理室的外部體積160。該靶材132於物理氣相沈積製程期提供材料沈積於基材i 〇4上。該間距物〗82係置於 132、蓋件130及處理室本體152之間以將耙材132電絕開蓋件1 3 〇及處理室本體1 5 2。該乾材1 3 2及機座組件1 〇〇係藉由電源〗8 4相對此作偏壓。氣體（例如氬氣）係由氣體源（未示出）供應係密例如該平本發授予材支於一的靜 106 鋁、間距時係置於在其 150 間可靶材性隔於彼至體 200835801 積160中。電漿則由f靜轧體形成於基材104及靶材132 電漿内的離子會加速朝而& u ^間。朝白靶材132並促使材料由乾脫離，而脫離的靶材鉍袓日丨丄 ^ 何材料則沈積在基材104上。磁電管134輕接5 接至該製程處理室ISO外部 1 3 0。該磁電管1 3 4白扛s J孤什括至少一轉動的磁性組件1 3 8，以利物理氣相沈積製程期間均月门构勺々耗靶材132。可採用管描述於1999年9月 w 〇 η π 日授予Or等人之美國專利第 5953827號中。 …矛樞紐組件 1 1 〇孫眩望λ π 係將盖組件1 56耦接至製程處理室 150。安裝有馬達的较翁 π勹递扪致動盜i i 6可耦接至樞紐組件丨〗〇及/ 或蓋件1 3 0以利蓋έ且杜1 ς < ^ ^ 0 β 现、、且仵156於開啟及關閉位置間移動。第Θ為製私套組114與基材支撐機座組件1〇〇接合的部分截面圖。雖然未示出，但製程套組U4之遮蔽件丨^ 係安裝於處理室本體152相對於蓋組件156的固定高度處。該沈積環1〇2圖示係位於一升高或製程位置，其:: 折的間隙250係界定在沈積環1〇2及接地遮蔽件162之間，以將電漿及沈積物限定在基材〗〇4與靶材丨32間界定出的區域内。該沈積環i 〇2及接地遮蔽件丨62另具有阻擋作用，以避免靶材丨32擊射出的材料不慎沈積在處理室的其他部分上。就其本身而論，沈積環i 〇2及接地遮蔽件i 62 可有效的將靶材132變成基材1〇4上沈積的材料層。接地遮蔽件—1 6 2具有二大致平坦的柱形本體2 〇 2，且可由導電材料（例如金屬）製成或塗覆導電材料。適用於接地遮蔽件162的金屬中包括不鏽鋼及鈦。選用作為接地遮 10 200835801 蔽件162的材料應與處理室内進行的製程相容。本體202 係安裝至處理室本體1 52以使本體202與機座組件1 00的中心線大致共中心。第2圖實施例中所示本體202的中心線2 0 0大致為垂直走向。中心線2 0的位置僅為說明性質，故其與圖示中的其他特徵並未按比例繪製。200835801 The base assembly 1〇0 generally includes a substrate support member i4〇, which is lightly attached to the platform cover 108β. The platform cover ι8 is usually made of a stainless steel or aluminum metal material. Cooling 124 is typically disposed within the housing cover 108 to thermally condition the substrate support 140. The base assembly 100, which can be benefited from the description, is described in U.S. Patent No. 55,7,499, issued to Davenport et al. The substrate support #140 can be made of Ming or ceramic materials. The certain floor piece may be an electrostatic suction seat, a ceramic body, a heater or a group thereof: In the embodiment, the substrate material 14 is-including a dielectric body 1〇6 electric suction cup, and the dielectric body towel is electrically conductive. Layer 112. The dielectric is typically made of a highly thermally conductive dielectric material such as pyrolytic boron nitride, tantalum nitride nitride, aluminum or equivalent materials. The cover assembly 156 generally includes a cover member 13A, a target & a member 182, and a magnetic, tube 134. The cover member 13 is supported by a plurality of side walls 158 in the closed position, as in the first! The figure shows. Seal 136 is between spacer 182 and cover member 13b and side wall 158 to avoid leakage between vacuum. The target 132 is coupled to the cover member 130 and exposed to the outer volume 160 of the process chamber. The target 132 provides material deposition on the substrate i 〇 4 during the physical vapor deposition process. The spacer 82 is placed between the cover member 130 and the processing chamber body 152 to electrically separate the coffin 132 from the opening member 13 and the processing chamber body 15 2 . The dry material 1 32 and the base assembly 1 are biased relative to each other by a power supply. The gas (for example, argon) is supplied by a gas source (not shown), for example, the static 106 aluminum, which is supported by the flattening material, is placed at a distance between the 150 and the target material. Volume 200835801 is 160. In the plasma, ions formed in the plasma of the substrate 104 and the target 132 by the static rolling body are accelerated toward the & The white target 132 is directed toward and causes the material to be detached from the dry, while the detached target is deposited on the substrate 104. The magnetron 134 is lightly connected to the outside of the process chamber ISO 130. The magnetron 1 3 4 includes at least one rotating magnetic component 138 to facilitate the loss of the target 132 during the physical vapor deposition process. U.S. Patent No. 5,953,827 to Or et al., which is incorporated herein by reference. The spear hub assembly 1 1 〇 Sun glare λ π couples the cap assembly 1 56 to the process chamber 150. The motor-mounted 勹勹扪扪扪 ii ii 6 6 can be coupled to the hub assembly 丨〇 / and / or cover 1 3 0 to facilitate the cover and Du 1 ς < ^ ^ 0 β now, and The 仵 156 moves between the open and closed positions. The third section is a partial cross-sectional view of the private set 114 engaged with the substrate support base assembly. Although not shown, the shield member of the process kit U4 is mounted at a fixed height of the process chamber body 152 relative to the lid assembly 156. The deposition ring 1 〇 2 is shown in a raised or process position, wherein: a folded gap 250 is defined between the deposition ring 1 〇 2 and the ground shield 162 to limit the plasma and deposit to the base. The material is defined in the area between the 〇4 and the target 丨32. The deposition ring i 〇 2 and the ground shield 丨 62 additionally have a barrier function to prevent material that is shot by the target cymbal 32 from being inadvertently deposited on other portions of the processing chamber. For its part, the deposition ring i 〇 2 and the ground shield i 62 can effectively transform the target 132 into a layer of material deposited on the substrate 1〇4. The ground shield - 162 has two substantially flat cylindrical bodies 2 〇 2 and may be made of or coated with a conductive material such as metal. The metal suitable for the ground shield 162 includes stainless steel and titanium. Materials selected for grounding cover 10 200835801 should be compatible with the process in the processing chamber. The body 202 is mounted to the process chamber body 152 such that the body 202 is substantially co-centered with the centerline of the base assembly 100. The centerline 200 of the body 202 shown in the embodiment of Figure 2 is generally vertically oriented. The position of the centerline 20 is merely illustrative and is not drawn to scale with other features in the figures.

本體202包括一上表面204、一下表面206、於一外壁 220及一内緣224。於第2圖所示實施例中，除了上表面 204的傾斜面22 6(往下朝向本體202内緣224傾斜）外，該上表面204及下表面206大致垂直於中心線200。内環208及外環210係由下表面206向下延伸。該等環部20 8，2 10為大致細長的柱形狀（相較於本體202的大致形狀）。於第2圖所示實施例中，該等環部208，210方向係採大致平行間隔的關係。外環2 1 0的外徑也可與外壁2 2 0 外徑相同。安裝段212係沿著外壁220由上表面204向上延伸。該安裝段212包括一内壁214及一内錐形部216、一外壁 222及一安裝凸緣218。該内壁214係由上表面大致垂直於内錐形部向上延伸。該内錐形部2 1 6係向上及向外延伸以在遮蔽件162及靶材130間提供空隙（如第1圖所示）。該外壁222直徑通常大於本體2 02外壁220之外徑。該安裝凸緣2 1 8係由外壁 2 2 2向外延伸並囁合本體 1-52及/或蓋組件156以確保.遮蔽件_1 62就定位。該安裝凸緣2 1 8可包括數個孔洞及/或狹長孔以利耦接至本體1 5 2及 /或蓋組件156。由於本體152及/或蓋組件156(安裝有遮 11 200835801 敝件1 6 2)可竹^r _ & J熱调節，故安裝凸緣218的溫度控制能經由傳導方式進行。接地遮®株1 < 0 ^ Μ 、々献件162的某些部分可作.塗覆、紋路處理或其他表面處理。於 ^ , % 一貝施例中，該接地遮蔽件1 6 2在至少某 —表面上呈起佚业〜穴狀。起伏部（例如紋理化）可經由蝕刻、浮珠名、砂療轟擊（grit blasting)、磨礙或磨光或及他適合製令之。於第2圖所示實施例中，接地遮蔽件 62的所有表面都經過珠擊處理。接地遮蔽件的經珠擊表面通常有約250忐或更南微英吋的RA表面粗糙度。沈積環102且右士 & , 大致平坦的柱形本體252且可由導體或非導體材料製成。於 ^ ^ ^ 於一實施例中，該沈積環1 02係由陶究材料製成，例如石央、氧化鋁或其他適合材料。本體2 5 2大致句紅匕括一外部274、一内部276、一下表面 256及一上表面254〇、嗓上表面254包括一凹部258，其在遮蔽件1 6 2及沈積環鲁、& 1 0 2位置彼此接近時可容納遮蔽件 162的唇部228。下 β卸2 5 6係經配置安置在機座組件1 〇〇周圍處形成的突出部2 . Ζ4〇上。該下表面256可呈平坦及/ 或具有一平滑表面抛夹 ^ 尤度，以利與突出部240有良好熱接觸。下表面256及突屮却、 4 24〇間相當大（在與傳統設計相比：的接觸面積以及本體 ^ 相當細的環節面積可提供該環 “2及機座組件1〇〇 ^ 間良好熱傳送。就其本身而論，環 # 102溫度經由與機 i成件1 〇〇的熱傳送便可輕易維.持在固定溫度。於一實施例中，一十氣夕個溫度控制件246可設於機癌 12 200835801 組件100中突出部240正下方，以加強環部1〇2的溫度控制而不受機座組件100特徵（用以控制基材1〇4溫度）的影響。該等溫度控制件246可包括一或多個導管（用以於其間流動熱傳送流體）、電阻加熱器及類似物。溫度控制件246 的輸出係由一或多個適合的溫度控制源248所控制，例如電源、熱傳送流體供應器及類似物。内壁260係由内部276向上延伸至基材支撐凸緣 2 62。該内壁260具一内徑，其經選擇以維持該壁26〇及一階梯部242(將該突出部240耦接至機座組件100之頂表面）間的間隙。該内壁260之高度係經選擇以維持該環部1〇2 之凸緣262及機座組件1 〇〇頂表面244間的間隙。The body 202 includes an upper surface 204, a lower surface 206, an outer wall 220 and an inner edge 224. In the embodiment illustrated in Fig. 2, the upper surface 204 and the lower surface 206 are substantially perpendicular to the centerline 200 except for the inclined surface 22 of the upper surface 204 (which is inclined downward toward the inner edge 224 of the body 202). Inner ring 208 and outer ring 210 extend downwardly from lower surface 206. The ring portions 20, 2, 10 are generally elongated column shapes (compared to the general shape of the body 202). In the embodiment shown in Fig. 2, the directions of the loop portions 208, 210 are generally parallel spaced. The outer diameter of the outer ring 210 may also be the same as the outer diameter of the outer wall 2 2 0. Mounting segment 212 extends upwardly from upper surface 204 along outer wall 220. The mounting section 212 includes an inner wall 214 and an inner tapered portion 216, an outer wall 222 and a mounting flange 218. The inner wall 214 extends upwardly from the upper surface generally perpendicular to the inner tapered portion. The inner tapered portion 2 16 extends upwardly and outwardly to provide a gap between the shield member 162 and the target member 130 (as shown in Fig. 1). The outer wall 222 is generally larger in diameter than the outer wall 220 of the body 208. The mounting flange 2 18 extends outwardly from the outer wall 222 and engages the body 1-52 and/or the cover assembly 156 to ensure that the shield member 106 is positioned. The mounting flange 2 18 can include a plurality of holes and/or slits for coupling to the body 15 2 and/or the lid assembly 156. Since the body 152 and/or the cover assembly 156 (with the cover 11 200835801 element 162) can be thermally adjusted, the temperature control of the mounting flange 218 can be performed by conduction. Some parts of the grounding shield 1 < 0 ^ Μ , 々 162 can be used for coating, grain processing or other surface treatment. In the case of ^ , % 一贝, the grounding shield 162 is on the at least one surface to form a 〜-hole shape. The undulations (e. g., texturing) can be etched, floated, grit blasted, scratched or polished, or he is suitable for making. In the embodiment shown in Fig. 2, all surfaces of the ground shield 62 are subjected to bead blasting. The beaded surface of the ground shield typically has an RA surface roughness of about 250 或更 or more micro-inch. The deposition ring 102 and the right-hander & , a substantially flat cylindrical body 252 and may be made of a conductor or non-conductor material. In one embodiment, the deposition ring 102 is made of a ceramic material such as stone, alumina or other suitable material. The body 2 552 includes an outer portion 274, an inner portion 276, a lower surface 256, and an upper surface 254, and the upper surface 254 includes a recess 258 for the shield member 162 and the stacking ring, & The lips 228 of the shield 162 can be received when the 1 0 2 positions are close to each other. The lower β unloading 2 5 6 is configured to be placed on the protrusion 2 formed around the base assembly 1 〇 .. The lower surface 256 can be flat and/or have a smooth surface throwing comfort to facilitate good thermal contact with the projections 240. The lower surface 256 and the abrupt but 4 4 相当 are quite large (compared with the traditional design: the contact area and the body ^ is a relatively thin link area to provide good heat between the ring 2 and the base assembly 1〇〇 In its own right, the temperature of the ring #102 can be easily maintained at a fixed temperature by heat transfer from the machine i. In one embodiment, a temperature control unit 246 can be used. It is disposed directly under the protrusion 240 of the component 100 200835801 assembly 100 to strengthen the temperature control of the ring portion 1〇2 without being affected by the characteristics of the base assembly 100 (to control the temperature of the substrate 1〇4). Control 246 may include one or more conduits for flowing a heat transfer fluid therebetween, an electrical resistance heater, and the like. The output of temperature control 246 is controlled by one or more suitable temperature control sources 248, such as The power supply, heat transfer fluid supply, and the like. The inner wall 260 extends upwardly from the interior 276 to the substrate support flange 262. The inner wall 260 has an inner diameter that is selected to maintain the wall 26 and a step 242. (The protrusion 240 is coupled to the base assembly 10 The gap between the top surfaces of 0. The height of the inner wall 260 is selected to maintain the gap between the flange 262 of the ring portion 1〇2 and the dome surface 244 of the base assembly 1.

基材支撐凸緣262係由内壁260上端向内延伸，並遮盍機座組件1 0 0頂表面2 4 4之外緣。於一實施例中，該凸緣262大致垂直該内壁260並平行下表面256及上表面 2 5 4。該凸緣2 6 2包括數個基材支撐扣狀部2 6 4，以支樓基材104於該凸緣262上表面上方一距離處。該扣狀部2M 可為圓形、柱形、斜截錐形（truncated conical shape)咬其他適合形狀。該扣狀部264可將基材1 〇4與環部} 〇2間的接觸最小化。扣狀部2 6 4及基材1 〇 4間的最小接觸能減少可能形成的粒子，同時最小化環部1 02及基材〗04間的熱傳送。於一實施例中’三個扣狀部264可對稱地以一極性陣列-(ρ 〇 1 a r a r r -a -y-)方式安置-，·並呈約1 m m的高度。面朝上的U形通道266通常形成在本體252外部274 處。該U形通道266具有^一内足部2686，其藉一底部270 13 200835801 搞接至外足部272。該内足部268由本盤252 向下延伸，其並具一内徑經選擇以維持該機座該環部102間的間隙。該等足部268,272大致為細長杈狀（與環音丨 . 252相比）。於第2圖所示實施例中，該等足部知大致平行間隔關係，並經配置以與接地遮蔽環2 0 8交插。 Φ 該等足部268,272及内環208間的間格可間隙2 5 0的外部區。該曲折間隙2 5 〇的内部區The substrate support flange 262 extends inwardly from the upper end of the inner wall 260 and conceals the outer edge of the top surface 24 of the base assembly 100. In one embodiment, the flange 262 is substantially perpendicular to the inner wall 260 and parallels the lower surface 256 and the upper surface 254. The flange 262 includes a plurality of substrate support buttons 246 at a distance above the upper surface of the flange 262. The button portion 2M may have a circular shape, a cylindrical shape, or a truncated conical shape to bite other suitable shapes. The button portion 264 minimizes contact between the substrate 1 〇 4 and the ring portion 〇 2 . The minimum contact between the button portion 246 and the substrate 1 〇 4 reduces the number of particles that may be formed while minimizing heat transfer between the ring portion 102 and the substrate 04. In one embodiment, the three button portions 264 are symmetrically disposed in an array of polarities - (ρ 〇 1 a r a r r - a - y - ) and have a height of about 1 m m. A U-shaped channel 266 that faces upward is generally formed at an outer portion 274 of the body 252. The U-shaped channel 266 has an inner foot 2686 that is attached to the outer foot 272 by a bottom 270 13 200835801. The inner foot portion 268 extends downwardly from the disk 252 and has an inner diameter selected to maintain a gap between the ring portions 102 of the base. The feet 268, 272 are generally elongated (compared to the ringtone 252.). In the embodiment illustrated in Figure 2, the feet are generally parallel spaced and configured to interpose with the grounded shield ring 206. Φ The space between the feet 268, 272 and the inner ring 208 may be an outer region of the gap 250. The internal zone of the tortuous gap of 2 5 〇

蔽件162之唇部228及沈積環1〇2之壁面2 6Q 之間。該唇部228及沈積環102間的間距可作進或減少基材1〇4面對機座組件1〇〇之側上的由於進入曲折間隙2 5 0内部區域的入口有 4遮蓋且遠離（face away)内部體積16〇中濺的軌道，故相較於傳統設計不太可能會有在曲 ^ 内化成並成為橋架（b r i d g i n g )的沈積物，因此可冱1 1 4數次清洗之間的使用壽命。此外，由於製的沈積環102及接地遮蔽件162並未接觸，因成极子污染的可能性。再者，由於製程套組1 : 1 0 〇 . 及接地遮蔽件162與其支撐結構（如機座組理至本體152/蓋組件156)有良好熱接觸，故 4的熱控制。強化熱控制即能對套組1 14上作應力控制，故相較於傳統設計會有較少的粒第3圖為一製程套組3 〇〇另一實施例與基下表面2 5 6 組件100及 102本體 268,272 係件162之内界定出曲折係界定在遮與凹部2 5 8 選擇，以促尤積。部分被基材鍍乾材材料折間隙250 延長製程套程套組1 1 4 此可消除形 I 4的沈積環件1 〇〇及處可強化套組沈積.的薄膜子形成。材支樓機座 14 200835801 100接合之截面圖。該製程套組3 00大致包括〜、》尤積JS 及一接地遮蔽件304交插形成曲折間隙350。 I 〇2 接地遮蔽件3 04大致類似前述接地遮蔽件。所述實施例中，該遮蔽件3 〇4包括一柱形本體1 ;第3 _ . . - Λ Λ 〇06， ❿ 有一上表面308、一下表面31〇、一内緣312及—外…其具該上表面308包括一斜面316。本體3〇6下表面夕壁314。環208及外環21〇。於—實施例中，内緣~ 310 大It u 地截短該斜面3 1 6。上沈積環302大致_似前述沈積環，但在環部3 表面254上另形成一補集部（&叩）352。該補集部〜上在補集部壁面360及環部3〇2上表面254之間。該補集部壁360包括一環部3 54，其由環部3 面254向上延伸至唇部3 56。該唇部3 56向内^及二〇2上表至内壁260及上壁254之接合處。該 I下延作 ---------- 的末蠕基；φ 包内傾斜界定上較環部354旁之唇部3 56部分靠近上表面254 集部川的上頂部較唇部3 56末端為高。這樣的幾二“ 有利於補獲沈積材料而不會使沈積物集結，因此避免唇苦 3 5 6及基材104之間橋架出間隙（bridging of gap)。於一貝施例中，該環部3 54的上表面包括一内斜壁26 及一外斜壁262 ’其係於-頂點266交會。該内斜壁26 係由該頂·點3 66向下延伸至該唇部。外斜壁262貝“ 頂點3 6 6向下延伸5认卜、補集·部·壁3 6 8。沈積環3 0 2之外名壁262及遮蔽件304之内緣界定出由内體積16〇之| 程區域通至曲折間隙35〇的入口。以使相 15 200835801 第3圖之製程套組300藉由曲蛀辦命〆丄間隙350將電漿隔絕特徵與經由補集部352控制的邊、盘叶 7積物隔開。此外，在遮蔽件3 04之内徑及外徑間的距離每所〜+上， Α貝縮減時，按此實施例方式可減少製造成本而不致大幅姆，Λ 3加組裝匹配之沈積環 3 02所需的材料。、第4圖為製程套組400另一每 1ΠΛ ^ ^ ^ 貝知例與基材支撐機座 1〇〇接合之截面圖。該製程套組4〇〇 η ^ , ώ ^ 致包括一沈積環402 曲折間隙450 及一接地遮敝件404，其係交插形成前述第 • 2圖所述接地遮該接地遮蔽件404大致類似蔽件。於第4圖所示實施例中，該遲蔽件404包括一平坦柱形本體406，其具有一上表面4〇 ~下表面410、一内緣412及一外壁41〇該上表面4〇匕括一斜面416。該本體406之下表面410具有一柱形環418。該柱形環4 1 8向下及向外延伸廿、評並與沈積環402交插。於第4圖所示實施例中，該環$丨8柏 1 δ相對於遮蔽件4 〇 4中心線朝向約5至約3 5度之方位。沈積環402大致類似前述沈積|，但加上一傾斜的υ 形通道420。該U形通道42〇包括_内足部422，藉一底部426耦接至一外足部424。該等足部422,424相對於環 402的中心線朝向約5至約35度的方位。於第4圖所示實施例中’該專足部4 2 2，4 2 4如遮蔽件4 0 4之柱形環4 1 8般係朝向相同方位。… ..... -. ' · - 該外足部424之末端内徑大致經選擇以不遮住該環 418的末端，使得遮蔽件4〇4及沈積環402可在機座組件 16 200835801 1 00下降作基材交換時能隔開而不會彼此阻礙。當機座組件10G升至第4圖所示製程位置時，該等足部422,424及環部4 1 8可界定出該曲折間隙4 5 〇的外部部分。亦可選擇的是在外足部4 2 4末端處形成延伸部4 3 0 (以虛線表示）。該延伸部430可延伸並增加曲折間隙45〇額外的轉折。該延伸部43 0包括一凸緣432由外族部424末端向外延伸至末端環434 ^該末端環434具一内徑，其經選The lip 228 of the cover member 162 and the wall surface 2 6Q of the deposition ring 1〇2. The spacing between the lip portion 228 and the deposition ring 102 can be made to reduce or reduce the distance between the substrate 1〇4 facing the base of the base assembly 1 and the entrance to the internal region of the tortuous gap 250. Face away) The internal volume of the 16-inch spattered orbit, so it is unlikely that there will be a deposit in the curved and internal bridging compared to the traditional design, so it can be 冱1 1 4 several times between cleaning Service life. In addition, since the deposition ring 102 and the ground shield 162 are not in contact, the possibility of contamination by the poles is caused. Furthermore, since the process kit 1 : 10 〇 . and the ground shield 162 have good thermal contact with its support structure (e.g., the base assembly to the body 152 / cover assembly 156), the thermal control of 4. Intensified thermal control enables stress control on the set 1 14 , so there will be fewer particles compared to the conventional design. Figure 3 shows a process set 3 . Another embodiment and the base lower surface 2 5 6 components Within the body 268, 272 of the 100 and 102 bodies, a tortuous line is defined defining the obscuration and recesses 2 58 to facilitate accumulation. Part of the substrate is coated with dry material. Folding gap 250 Extends the process set of the set 1 1 4 This eliminates the shape of the I 4 deposition ring 1 〇〇〇可可可可可可可可可可可可可可可可可Material support base 14 200835801 100 joint sectional view. The process kit 300 includes a plurality of ~, "JS" and a ground shield 304 interleaved to form a tortuous gap 350. The I 〇 2 ground shield 3 04 is substantially similar to the aforementioned ground shield. In the embodiment, the shielding member 3 包括 4 includes a cylindrical body 1; the third _ . . . , 上〇〇 06, ❿ has an upper surface 308, a lower surface 31 〇, an inner edge 312, and the like The upper surface 308 includes a ramp 316. The lower surface 314 of the lower surface of the body 3〇6. Ring 208 and outer ring 21〇. In the embodiment, the inner edge ~ 310 large It u truncates the slope 3 16 . The upper deposition ring 302 is substantially like the aforementioned deposition ring, but a complementary portion (& 叩) 352 is formed on the surface 254 of the ring portion 3. The complement portion to the upper portion is between the complement portion wall surface 360 and the ring portion 3〇2 upper surface 254. The complement wall 360 includes a ring portion 3 54, which extends upwardly from the ring portion 3 face 254 to the lip portion 3 56. The lip portion 3 56 is inwardly and inwardly joined to the junction of the inner wall 260 and the upper wall 254. The I is extended as the last creeping base of the ----------; the inside of the bag is inclined to define the upper lip portion 354. The lip portion 3 56 is close to the upper surface 254. 3 56 ends are high. Such a few "will facilitate the replenishment of the deposited material without the accumulation of deposits, thus avoiding the bridging of gap between the lip and the substrate 104. In the case of a shell, the ring The upper surface of the portion 3 54 includes an inner inclined wall 26 and an outer inclined wall 262 'which are tied to the apex 266. The inner inclined wall 26 extends downward from the top point 3 66 to the lip. Wall 262" "Vertex 3 6 6 extends downward 5 recognition, complement, part, wall 3 6 8 . The outer edge of the deposition ring 3 0 2 and the inner edge of the shield 304 define an entrance from the inner volume 16 通 to the meandering gap 35 。. The process set 300 of the phase 15 200835801, Fig. 3, is separated from the side and disk 7 controlled by the complement 352 by the meander gap 350. In addition, when the distance between the inner diameter and the outer diameter of the shielding member 304 is reduced by Α, when the mussel is reduced, the manufacturing cost can be reduced according to this embodiment without increasing the thickness, and the assembly ring 3 is assembled and matched. 02 required materials. Fig. 4 is a cross-sectional view showing another example of the process set 400 joined to the substrate support base. The process kit 4〇〇η ^ , 包括 ^ includes a deposition ring 402 meandering gap 450 and a grounding concealing member 404, which are interleaved to form the grounding shield. The grounding shield 404 is substantially similar to the above-mentioned FIG. Covering. In the embodiment shown in FIG. 4, the delay member 404 includes a flat cylindrical body 406 having an upper surface 4 下 to a lower surface 410, an inner edge 412, and an outer wall 41 上 the upper surface 4 〇匕A bevel 416 is included. The lower surface 410 of the body 406 has a cylindrical ring 418. The cylindrical ring 4 1 8 extends downward and outward, and is interspersed with the deposition ring 402. In the embodiment shown in Fig. 4, the ring $丨8 柏 1 δ is oriented from about 5 to about 35 degrees with respect to the center line of the shield 4 〇 4 . The deposition ring 402 is substantially similar to the previously described deposition|, but with a sloping meandering channel 420. The U-shaped channel 42 includes an inner foot 422 coupled to an outer foot 424 by a bottom portion 426. The feet 422, 424 are oriented with respect to the centerline of the ring 402 in an orientation of from about 5 to about 35 degrees. In the embodiment shown in Fig. 4, the foot portion 4 2 2, 4 2 4 such as the cylindrical ring 4 1 8 of the shield member 4 0 is oriented in the same orientation. The end inner diameter of the outer leg portion 424 is generally selected so as not to obscure the end of the ring 418, so that the shield member 4〇4 and the deposition ring 402 can be in the base assembly 16 200835801. The 100 00 drop can be separated when the substrate is exchanged without hindering each other. When the base assembly 10G is raised to the process position shown in Figure 4, the feet 422, 424 and the ring portion 418 define the outer portion of the meandering gap 45 〇. Alternatively, an extension 4 3 0 (indicated by a dashed line) is formed at the end of the outer foot portion 4 2 4 . The extension 430 can extend and increase the additional transition of the tortuous gap 45. The extension 43 0 includes a flange 432 extending outwardly from the end of the outer portion 424 to the end ring 434. The end ring 434 has an inner diameter that is selected

擇以按間隔關在機座組件1 〇〇位於圖示升舉位置時限定該遮蔽件404之外壁414周圍。第4圖之製程套組4〇〇相較於前述傳統設計製造成本較為經濟並具有諸多優點。第5圖係製程套組5〇〇另一實施例與基材支撐機座 1〇〇接合時之戴面圖。該製程套組5〇〇大致包括一沈積環 5 0 2及接地遮蔽件5 0 4交插形成一曲折間隙5 5 〇。 *該接地遮蔽件504大致類似前述第3_4圖所述之接地遮蔽件。於第5圖所示實施例中，該遮蔽件5〇4包括一柱形本體506，其具有一上表面3〇8、一下表㊆31〇、一内緣外土 314。該外壁308包括一斜面316。該本體3〇6 3 1 〇包括一柱形裱4 ! 8。該柱形環48向下並向外延伸且與沈積環502交插。 ,沈積環502内部大致類似前述第3圖沈積環3〇2。壤502包括一補集部352形成在該環5〇2 —上表面Μ# 該補集部3 52界定在補集部壁面36〇及上表面254之間該補集部壁面360包括一環部3 54、一唇音"56及數布 17 200835801 會於一頂點366之斜壁262,264。該沈積環5 02外部大致類似前述第4圖所述沈積環 402。該環502包括一傾斜1;形通道420。該1；形通道420 包括一内足部422，藉一底部426耦接至一外足部424。該等足部422,424係經配置以按前述與遮蔽件504柱形環418 交插。The outer wall 414 of the shield 404 is defined to be closed at intervals in the illustrated lift position. The process kit of Figure 4 is more economical and has many advantages over the conventional design described above. Figure 5 is a front view of the process kit 5 when another embodiment is joined to the substrate support frame. The process kit 5〇〇 generally includes a deposition ring 502 and a grounding shield 504 interposed to form a tortuous gap 5 5 〇. * The ground shield 504 is substantially similar to the ground shield described in the aforementioned FIG. In the embodiment shown in Fig. 5, the shield member 5〇4 includes a cylindrical body 506 having an upper surface 3〇8, a lower surface 731〇, and an inner edge outer soil 314. The outer wall 308 includes a ramp 316. The body 3〇6 3 1 〇 includes a cylindrical shape 4 8 . The cylindrical ring 48 extends downwardly and outwardly and interspersed with the deposition ring 502. The interior of the deposition ring 502 is substantially similar to the deposition ring 3〇2 of the aforementioned FIG. The soil 502 includes a complementary portion 352 formed on the ring 5〇2—the upper surface Μ#. The complementary portion 3 52 is defined between the complementary portion wall surface 36〇 and the upper surface 254. The complementary portion wall surface 360 includes a ring portion 3 54. A lip tone "56 and number cloth 17 200835801 will be at a vertex 366 slanting wall 262,264. The outer portion of the deposition ring 502 is substantially similar to the deposition ring 402 described in the aforementioned fourth embodiment. The ring 502 includes a tilt 1 shaped passage 420. The 1 shaped channel 420 includes an inner foot 422 coupled to an outer foot 424 by a bottom portion 426. The feet 422, 424 are configured to interpose with the cylindrical ring 418 of the shield 504 as previously described.

第6圖為製程套組6〇〇另一實施例與基材支撐機座 1〇〇接合之戴面圖。該製程套組6〇〇大致包括一沈積環620 及一接地遮蔽件662，其等交插形成一曲折間隙650。該沈積& 620及遮蔽件622大致類似前述沈積環1 02及接地遮蔽件1 6 2 ’且為簡明起見，其類似特徵均標以相同參考號而不另作說明。 ;第6圖所示貫施例中，該沈積環内壁26〇具肩 2基材支撐端622。該基材支撐端622並未徑向延伸至户壁260中。該基材支撐端622具一基材安置表面，其經s X將基材1 04支撐在機座組件1 〇〇表面244上方，且灰 2施例中，其係大致平坦且垂直該環6 2 0之中心線。% 、貝成例中’該内壁26〇高度約〇45英对。該内壁26〇石 ::%凸、緣262之下表面256的交點可去角(c —旬，呈45度角，以提供機座組件1〇〇額外空間。 ^ 6圖所示實施例中，沈積環㈣也可在其上表g 部620 Γ處S ’如虛線Μ所示。該紋理化表面可提供1 剝落之’尤積材料更佳的黏附性，使得沈積材料粒子i 不會輕易與環部620分離而成為製程過程的製程汽 18 200835801 染物。前述黏附的沈積材料可利用原位及/或異位清潔製程由部620移除。&一實施例中，該環可如前述方式作紋路處理。該接地遮蔽件662包括一安裝段212，其在上外徑6〇4 上具有-階梯冑606。該階梯冑6〇6可將外I 6〇4耦接至一實質水平的上表面6〇2。一轉換半徑（transiti〇nFigure 6 is a perspective view of another embodiment of the process kit 6 and the substrate support base. The process kit 6 〇〇 generally includes a deposition ring 620 and a ground shield 662 that are interleaved to form a meandering gap 650. The deposition & 620 and shield 622 are generally similar to the aforementioned deposition ring 102 and ground shield 1 6 2 'and for the sake of brevity, like features are designated by the same reference numerals and are not described. In the embodiment shown in Fig. 6, the inner wall 26 of the deposition ring has a shoulder 2 substrate supporting end 622. The substrate support end 622 does not extend radially into the wall 260. The substrate support end 622 has a substrate seating surface that supports the substrate 104 over the top surface 244 of the base assembly 1 via s X, and in the embodiment of the ash 2, it is substantially flat and perpendicular to the ring 6 The center line of 20. In the case of % and Bay, the inner wall 26 is about 45 inches high. The inner wall 26 vermiculite::% convex, the intersection of the lower surface 256 of the edge 262 can be chamfered (c-ten, at a 45 degree angle to provide additional space for the base assembly 1). The deposition ring (4) can also be shown in the upper part g 620 S ' ' 如如如如如。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。 Separating from the ring portion 620 to form a process steam 18 200835801. The previously deposited deposition material can be removed by the portion 620 using an in-situ and/or ex situ cleaning process. & In one embodiment, the ring can be as described above The grounding shield 662 includes a mounting section 212 having a stepped 胄 606 on the upper outer diameter 6〇4. The step 胄6〇6 can couple the outer I 6〇4 to a substantial level. The upper surface is 6〇2. A conversion radius (transiti〇n

radlUS)608可連接該接地遮蔽件662之外壁222及上外壁 604 〇一唇部 610係由上外壁6〇4向下延伸並超過該轉換半該唇部610可在製程處理室及接徑608，如第6圖所示地遮蔽件662間提供縮減的接觸面積。該接地遮蔽件662之上内表面也可作紋路處理，如虛線654所示…文所述，該接地遮蔽件之紋理表面可提供沈積材料更加的黏附性’ &其在之後不會成為製程污染物0 該接地遮蔽件662之唇部228也可包括一凹部612形成在遮蔽件本冑202之4# 228及下表面2Q6之間的轉換處。該凹部612可在遮蔽件662及環部62〇間提供額外的空間以容納大量沈積在環部62〇凹部25 8中的材料。如前文所述之製程套組，第6圖的製程套組6〇〇相較於前述傳統設計其製造成本較經濟並具有諸多優點。因此，前述用·於物理氣相沈積製程處理室之製程套組在製程套組的接地遮蔽件及沈積環操作期間不接觸時可有效的減少可能形成的微粒。此外，當製稜套組之遮蔽件及 19 200835801 環部以經溫控的表面作接觸時製程套組的溫度可控制以降低及/或消除熱循環應力，藉以控制沈積在製程套組上的材料應力。再者，由於設計簡單化，本發明製程套組具有製造上的成本優勢且不需要傳統製程套組的第三環部（third ring)設計。The radlUS 608 can be connected to the outer wall 222 and the upper outer wall 604 of the grounding shield 662. The lip portion 610 extends downward from the upper outer wall 6〇4 and exceeds the conversion half. The lip 610 can be in the process chamber and the diameter 608. A reduced contact area is provided between the shields 662 as shown in FIG. The inner surface of the grounding shield 662 can also be textured, as shown by the dashed line 654. The textured surface of the grounding shield can provide more adhesion to the deposited material. & Contaminant 0 The lip 228 of the ground shield 662 may also include a recess 612 formed at the transition between the 4# 228 and the lower surface 2Q6 of the shield member 202. The recess 612 provides additional space between the shield 662 and the ring portion 62 to accommodate a substantial amount of material deposited in the recess 62 of the ring portion 62. As with the process kits described above, the process kits of Fig. 6 are economical and have many advantages over the conventional designs described above. Therefore, the aforementioned process kit for the physical vapor deposition process chamber can effectively reduce the number of particles that may be formed when the process block's ground shield and the deposition ring are not in contact during operation. In addition, the temperature of the process set can be controlled to reduce and/or eliminate thermal cycling stress when the shield of the ferrule and the ring of the 200835801 are contacted by the temperature-controlled surface, thereby controlling deposition on the process set. Material stress. Moreover, due to the simplification of the design, the process kit of the present invention has a manufacturing cost advantage and does not require a third ring design of a conventional process kit.

雖然本發明前述係關於較佳實施例，但本發明進一步的實施例亦可在不悖離發明基本精神下提出，且其範圍係由下文申請專利範圍所界定。【圖式簡單說明】本發明更詳細的說明在參照下文實施例及附加圖示後將更可清楚領會。然而，應理解的是該附加圖示僅繪示本發明一般實施例而不應視為本發明範圍的限制，本發明亦涵蓋其他同等效果的實施例。第1圖為一具有製程套組實施例之半導體製程系統的簡要截面圖；第2圖為該製程套組與第1圖之基材支撐機座交插的部分截面圖；第3圖為一與基材支撐機座交插之製程套組另一實施例的部分截面圖；第4圖為一與基材支撐機座交插之製程套組另一實施例的部分截面圖;- --. 第5圖為一與基材支撐機座交插之製程套組另一實施例的部分截面圖；以及 20 200835801 第6圖為一與基材支撐機座交插之製程套組另一例的部分截面圖。為便於理解，圖中盡可能以相同參考號標示相件。應理解的是實施例中所揭示的元件亦可適用於其施例而無需特定說明。【主要元件符號說明】實施同元他實While the present invention has been described in terms of the preferred embodiments, the embodiments of the present invention may be made without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The invention will be more clearly understood from the following description and appended claims. However, it is to be understood that the appended claims are not to be construed as limiting 1 is a schematic cross-sectional view of a semiconductor process system having a process kit embodiment; FIG. 2 is a partial cross-sectional view of the process kit and the substrate support base of FIG. 1; A partial cross-sectional view of another embodiment of a process kit interposed with a substrate support base; FIG. 4 is a partial cross-sectional view of another embodiment of a process kit interposed with a substrate support base; Figure 5 is a partial cross-sectional view showing another embodiment of a process kit interposed with a substrate support base; and 20 200835801 Figure 6 is another example of a process kit interposed with a substrate support base Partial section view. For ease of understanding, the figures are labeled with the same reference numbers as much as possible. It should be understood that the elements disclosed in the embodiments may also be applied to the embodiments without specific description. [Explanation of main component symbols] Implementation of the same yuan

100 機座組件 102 沈積環 104 基材 106 本體 108 外罩 110 框紐組件 112 導電層 114 製程套組 116 致動器 118 升舉機構 120 抽吸系統 122 抽吸埠 124 冷卻板 130 蓋件 132 乾材 134 磁電管 136 密封件 138 磁性組件 140 基材支撐件 150 處理室 152 本體 154 底部 156 蓋組件 158 側壁 160 遮蔽件 162 遮蔽件 180 接地遮蔽件 182 間距物 184 電源 186 蛇腹部 200 中心線 202 本體 204 上表面 206 下表面 21 200835801100 base assembly 102 deposition ring 104 substrate 106 body 108 housing 110 frame assembly 112 conductive layer 114 process kit 116 actuator 118 lift mechanism 120 suction system 122 suction 埠 124 cooling plate 130 cover member 132 dry material 134 Magnetotube 136 Seal 138 Magnetic assembly 140 Substrate support 150 Processing chamber 152 Body 154 Bottom 156 Cover assembly 158 Side wall 160 Shield 162 Shield 180 Ground shield 182 Spacer 184 Power supply 186 Snake abdomen 200 Centerline 202 Body 204 Upper surface 206 lower surface 21 200835801

208 内環 210 外環 212 安裝段 214 内壁 216 内錐形部 218 安裝凸緣 220 外壁 222 外壁 224 内緣 226 斜面 228 唇部 240 突出部 242 階梯部 244 上表面 246 溫度控制件 248 溫度控制 25 0 間隙 252 本體 254 上表面 256 下表面 258 凹部 260 内壁 262 基材支撐突緣 264 底部 266 U形通道 268 内足部 270 底部 272 外突出部 274 外部 '276 内部 300 套組 302 環部 304 遮蔽件 306 本體 308 上表面 310 下表面 312 内緣 3 14 外壁 316 斜面 3 50 曲折間隙 352 補集部 354 壁面 356 唇部 360 補集部壁 362 外斜壁 3 64 内斜壁‘ 366 頂點 368 外補集部 22 200835801208 Inner ring 210 Outer ring 212 Mounting section 214 Inner wall 216 Inner taper 218 Mounting flange 220 Outer wall 222 Outer wall 224 Inner edge 226 Bevel 228 Lip 240 Projection 242 Step 244 Upper surface 246 Temperature control 248 Temperature control 25 0 Gap 252 body 254 upper surface 256 lower surface 258 recess 260 inner wall 262 substrate support flange 264 bottom 266 U-shaped channel 268 inner foot 270 bottom 272 outer protrusion 274 outer '276 inner 300 set 302 ring portion 304 shield 306 Body 308 Upper surface 310 Lower surface 312 Inner edge 3 14 Outer wall 316 Bevel 3 50 Zigzag gap 352 Complement 354 Wall 356 Lip 360 Complement wall 362 External slant wall 3 64 Inner slant wall ' 366 Vertex 368 External complement 22 200835801

400 套組 402 環部 404 遮蔽件 406 本體 408 上表面 410 下表面 412 内緣 414 外壁 416 内錐形部 418 環部 420 U形通道 422 足部 424 足部 426 底部 45 0 曲折間隙 500 套組 502 環部 504 遮蔽件 506 本體 550 曲折間隙 600 製程套組 602 上表面 604 上外表面 606 階梯部 608 轉換半徑 610 唇部 612 凹部 620 沈積壤 622 基材支撐端 650 曲折間隙 662 接地遮蔽件400 sets 402 ring 404 shield 406 body 408 upper surface 410 lower surface 412 inner edge 414 outer wall 416 inner tapered portion 418 ring portion 420 U-shaped channel 422 foot 424 foot 426 bottom 45 0 meandering gap 500 set 502 Ring portion 504 shield 506 body 550 meandering gap 600 process kit 602 upper surface 604 upper outer surface 606 step portion 608 conversion radius 610 lip portion 612 recess 620 sedimentary soil 622 substrate support end 650 meandering gap 662 grounding shield

23twenty three

Claims

200835801 十、申請專利範圍： 1. 一種製程套組，其至少包括：一大致柱形之遮蔽件，其至少包括：一大致平坦之柱形本體，具有一上表面其向下朝一内端逐漸變細；200835801 X. Patent application scope: 1. A process kit, comprising at least: a substantially cylindrical shielding member, comprising at least: a substantially flat cylindrical body having an upper surface that gradually changes downward toward an inner end fine;

至少一細長之柱形環，由該本體向下延伸；以及一安裝部，由該本體之一外壁的本體上表面向上延伸，該安裝部具有一徑向朝外延伸超過該本體外壁的安裝凸緣、一由該本體上表面延伸出去的内壁、以及一由該内壁徑向朝外且朝上呈喇ϋ八狀的内錐形部（inner taper)。 2.如申請專利範圍第1項所述之製程套組，其中該本體係由不鏽鋼或鈦之至少一者製成。 3 .如申請專利範圍第1項所述之製程套組，其中該本體係由一導體材料製成或塗覆以一導體材料。 4.如申請專利範圍第1項所述之製#程套組，其中該本體之至少一部份係經表面處理。 5 ·如申請專利範圍第1項所述之製程套組，其中該本體之至少一部份具一珠擊處理之表面。 24 200835801 6 ·如申請專利範圍第1項所述之製程套組，其中至少一細長之柱形環相對於該本體之一中心線係朝向一垂直方向。 7.如申請專利範圍第1項所述之製程套組，其中該至少一細長之柱形環相對於該本體之一中心線係朝向約 5至約35度的方向。·At least one elongated cylindrical ring extending downwardly from the body; and a mounting portion extending upwardly from an upper surface of the body of the outer wall of the body, the mounting portion having a mounting projection extending radially outward beyond the outer wall of the body A rim, an inner wall extending from the upper surface of the body, and an inner taper radially outwardly from the inner wall and upwardly in a shape of a slap. 2. The process kit of claim 1, wherein the system is made of at least one of stainless steel or titanium. 3. The process kit of claim 1, wherein the system is made of or coated with a conductor material. 4. The process set of claim 1, wherein at least a portion of the body is surface treated. 5. The process kit of claim 1, wherein at least a portion of the body has a beaded surface. The process kit of claim 1, wherein the at least one elongated cylindrical ring faces a vertical direction with respect to a centerline of the body. 7. The process kit of claim 1, wherein the at least one elongated cylindrical ring faces in a direction from about 5 to about 35 degrees with respect to a centerline of the body. ·

8. 如申請專利範圍第1項所述之製程套組，其中該至少一細長之柱形環更至少包括：一内環；以及一外環，其以一大致平行關係與該内環間隔一段距離。 9. 如申請專利範圍第1項所述之製程套組，其中該安裝部8. The process kit of claim 1, wherein the at least one elongated cylindrical ring further comprises: an inner ring; and an outer ring spaced apart from the inner ring by a substantially parallel relationship distance. 9. The process kit of claim 1, wherein the installation section

一唇部，由該凸緣之一外徑向下延伸。 1 0 ·如申請專利範圍第1項所述之製程套組，其中該本體之該内緣係截短該斜面，且其中該内緣大致平行該本體之一中心線。 1 1 .如申請專利範圍第1項所述之製程套組，其更至少包 25 200835801 括：一大致柱形之沈積環，其至少包含：一大致平坦之柱形本盤，其具有一上表面及一下表面，該下表面經設置成被支撐在一基材支撐機座之一突出部（ledge)上；至少一向下延伸之U形通道，其耦接至該本體之一外部；以及A lip extending downwardly from an outer diameter of one of the flanges. The process kit of claim 1, wherein the inner edge of the body is truncated by the bevel, and wherein the inner edge is substantially parallel to a centerline of the body. 1 1 . The process kit of claim 1, further comprising at least 25 200835801 comprising: a substantially cylindrical deposition ring comprising: at least one substantially flat cylindrical disk having an upper portion a surface and a lower surface, the lower surface being configured to be supported on a ledge of a substrate support frame; at least one downwardly extending U-shaped channel coupled to an exterior of the body;

内壁’由該本體之一内部區域之該上表面向上延伸，且具有—基材支撐表面；基材支撐突出部，由該内壁徑向朝内延伸。 1 2如申明專利範圍第1 1項所述之製程套組，其中該沈積環更至少包括：大出4 ’由該内壁徑向朝内延伸；以及數個扣# ^ 設於該突出部之一上表面上且界定出該基材支撐表面。 1 3 ·如申請專利扣狀部更至二個扣隔配置。轉園第1 2項所述之製程套組，其中該數個少包括： ’其以一極性陣列（p 〇 1 a r a r r a y)方式等間 Μ.如申請專利已園第11項所述之製程套組，其中該u形 26 200835801The inner wall ' extends upwardly from the upper surface of an inner region of the body and has a substrate support surface; the substrate support projection extending radially inwardly from the inner wall. The process kit of claim 11, wherein the deposition ring further comprises: a large 4' extending radially inward from the inner wall; and a plurality of buckles #^ disposed on the protrusion An upper surface and defining the substrate support surface. 1 3 · If you apply for a patent, the button has more than two deduction configurations. The process kits described in item 1 of the transfer park, wherein the number includes: 'It is in the form of a polar array (p 〇 1 ararray). For example, the process set described in claim 11 Group, where the u-shaped 26 200835801

通至 15.如通 16·如部 17.如部向To 15. If the passage is as follows

道係經配置成可交***（interleave with)該遮蔽件之少一環部。申請專利範圍第11項所述之製程套組，其中該U形道更至少包括：一第一足部，耦接至該沈積環之該本體；一第二足部，向外與該第一足部相隔；以及一底部，接合該等足部。申請專利範圍第15項所述之製程套組，其中該等足大致平行於該沈積環之一中心線。申請專利範圍第1 5項所述之製程套組，其中該等足相對於該沈積環之一中心線朝向約5至約3 5度之方 18·如環向上: 於該申請專利範圍第1 1項所述之製程套組，其中該沈積之該本體更至少包括：一補集部壁面（trap wall)，由該沈積環之該上表面廷伸；以及一唇部，由該補集部壁面向内且向下延伸，以突出沈積環之該上表面之一内部之上。 27 200835801 1 9,如申請專利範圍第1 8項所述之製程套組，其中該補集部壁面之一上表面更至少包含：一内斜壁，與一外斜壁交會於一頂點。 20.—種製程套組，其至少包含：一大致柱形之沈積環，其至少包含：The trajectory is configured to be interleaved with a ring portion of the shield. The process kit of claim 11, wherein the U-shaped path further comprises: a first foot coupled to the body of the deposition ring; a second foot, outwardly and the first The feet are separated; and a bottom is joined to the feet. The process kit of claim 15 wherein the feet are substantially parallel to a centerline of the deposition ring. The process kit of claim 15 wherein the foot is oriented toward a centerline of the deposition ring toward a side of about 5 to about 35 degrees. 18 such as a ring upward: 1st in the scope of the patent application The process kit of claim 1, wherein the body of the deposit further comprises: a trap wall, the upper surface of the deposition ring, and a lip portion, the complement portion The wall extends inwardly and downwardly to project over the interior of one of the upper surfaces of the deposition ring. The process kit of claim 18, wherein the upper surface of the wall of the complement portion further comprises: an inner inclined wall intersecting an outer oblique wall at an apex. 20. A process kit comprising at least: a substantially cylindrical deposition ring comprising at least:

一大致平坦之柱形本體，其具有一上表面以及一下表面，該下表面配置成被支撐在一基材支撐機座之一突出部上；至少一向下延伸之U形通道，耦接至該本體之一外部；以及一内壁，由該本體之一内部區域之該上表面向上延伸且具有一基材支撐表面。 2 1 .如申請專利範圍第20項所述之製程套組，其中該沈積環更至少包含：一突出部，由該内壁徑向朝内延伸；以及數個扣狀部，設於該突出部之一上表面上且界定出該基材支撐表面。 22.如申請專利範圍第2 1項所述之製程套組，其中該數個扣狀部更至少包括：三個扣狀部，其以一極性陣列方式等間隔配置。 28 200835801 23.如申請專利範圍第20項所述之製程套組，其中通道係面朝上。 U形a substantially flat cylindrical body having an upper surface and a lower surface, the lower surface being configured to be supported on a protrusion of a substrate supporting base; at least one downwardly extending U-shaped channel coupled to the An outer portion of the body; and an inner wall extending upward from the upper surface of an inner region of the body and having a substrate support surface. The process kit of claim 20, wherein the deposition ring further comprises: a protrusion extending radially inward from the inner wall; and a plurality of button portions disposed at the protrusion One of the upper surfaces defines the substrate support surface. 22. The process kit of claim 21, wherein the plurality of buttons further comprises: three button portions disposed at equal intervals in a polar array. 28 200835801 23. The process kit of claim 20, wherein the channel is facing up. U shape

24.如申請專利範圍第20項所述之製程套組，其中通道更至少包含：一第一足部，耦接至該沈積環之該本體；一第二足部，向外與該第一足部相隔；以及一底部，接合該等足部。 U形 2 5.如申請專利範圍第24項所述之製程套組，其中部大致平行於該沈積環之一中心線。 26.如申請專利範圍第24項所述之製程套組，其中係由不鏽鋼或鈦之至少一者製成。該等足該本體The process kit of claim 20, wherein the channel further comprises: a first foot coupled to the body of the deposition ring; a second foot, outwardly and the first The feet are separated; and a bottom is joined to the feet. U-shape 2 5. The process kit of claim 24, wherein the portion is substantially parallel to a centerline of the deposition ring. 26. The process kit of claim 24, wherein the process kit is made of at least one of stainless steel or titanium. The foot

27.如申請專利範圍第20項所述之製程套組，其中環之該本體更至少包括：一補集部壁面，由該沈積環之該上表面向上以及一唇部，由該補集部壁面向内且向下延伸，於該沈積環之該上表面之一内部之上。該沈積延伸；以突出 29 200835801 2 8 .如申請專利範圍第2 7項所述之部壁面之一上表面更至少包含：一内斜壁，與一外斜壁交會製程套組，其中該補集於一頂點。27. The process kit of claim 20, wherein the body of the ring further comprises: a wall of the complement portion, the upper surface of the deposition ring is upward and a lip portion, and the complement portion The wall extends inwardly and downwardly over the interior of one of the upper surfaces of the deposition ring. The deposition extension; to highlight 29 200835801 2 8 . The upper surface of one of the wall surfaces as described in claim 27 of the patent application scope further comprises: an inner inclined wall, and an outer oblique wall intersection process set, wherein the Set at a vertex.

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