TW200832612A - Apparatus and method for integrated surface treatment and deposition for copper interconnect - Google Patents

Apparatus and method for integrated surface treatment and deposition for copper interconnect Download PDF

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Publication number
TW200832612A
TW200832612A TW96131987A TW96131987A TW200832612A TW 200832612 A TW200832612 A TW 200832612A TW 96131987 A TW96131987 A TW 96131987A TW 96131987 A TW96131987 A TW 96131987A TW 200832612 A TW200832612 A TW 200832612A
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TW
Taiwan
Prior art keywords
substrate
deposition
layer
copper
ald
Prior art date
Application number
TW96131987A
Other languages
Chinese (zh)
Other versions
TWI378532B (en
Inventor
Hyungsuk Alexander Yoon
John M Boyd
Mikhail Korolik
Yezdi Dordi
Fritz C Redeker
Original Assignee
Lam Res Corp
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Filing date
Publication date
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Priority claimed from US11/736,519 external-priority patent/US20080260967A1/en
Priority claimed from US11/736,514 external-priority patent/US20080260963A1/en
Priority claimed from US11/736,522 external-priority patent/US7615486B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200832612A publication Critical patent/TW200832612A/en
Application granted granted Critical
Publication of TWI378532B publication Critical patent/TWI378532B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the first proximity head for ALD.

Description

200832612 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種基板表面的處理裝置及方法。 【先前技術】 在半導體裝置(如積體電路、記憶體元件等)的製造中，進行一 連串生產操作將特徵部界定於半導體晶圓 ，反上為多階結構型式的積體電路裝置。在=:圓= =擴散區_電晶體裝置。在後續層級中，配線金屬化線被圖^200832612 IX. Description of the Invention: [Technical Field] The present invention relates to a processing apparatus and method for a substrate surface. [Prior Art] In the manufacture of a semiconductor device (e.g., an integrated circuit, a memory device, etc.), a series of production operations are performed to define a feature portion on a semiconductor wafer, and in turn, a multi-stage structure type integrated circuit device. At =: circle = = diffusion zone _ transistor device. In the subsequent level, the wiring metallization line is shown in the figure ^

亚且以電連接到電晶體裝置以達成所要的積體電路裝置。並/、 且，圖，化的導電層藉由介電材料與其他導電層絕緣。 確貫地生產次微米以及更小的特徵部是半導體裝置下一 超大型積體電路(VLSI，very large scale integrati〇n)以及極大型積體 電路(υΜΙ，ultra large scale integrati〇n)其中一項關鍵的技術。然 而:在VLSI以及ULSI技術中縮小配線尺寸已造成在處理性能上 更夕的需求。當電路密度增加時，空洞、接觸及其他特徵部以及 在此之間的介電材料的寬度減少耻微米尺寸(也就是說少於_ 微米或是再更少）’其巾介電層的厚度仍_大致蚊，結果造成 特徵部的方位比(也就是高度除以寬度)增加。在處理時，許多舊有 的沈積製財有_達成方位比超過4:1的次微米結構的實質^ 孔及無縫填滿。 、… 在如今，銅及其合金因其較低電阻性質，已成為次微米配線 技術所選擇的金屬。使用銅的問題為銅會擴散進入矽、二氧化矽 及其他介電材料，而可能損害裝置完整性。因此，保形屏障層於 避免銅^散上逐漸變得重要。銅可能無法良好地粘附屏障層；因 此、，可能需要在屏障層及銅之間沈積背襯層。背襯層的保形沈積 亦為重要以提供良好的台階覆蓋以輔助銅附著及/或沈積。 在配線特徵部上藉由沈積方法(例如原子層沈積(ALD，atomic layer deposition))進行的屏障層保形沈積，需要發生於乾淨表面上 200832612 以讀保在屏賴及/或背姆及在其上的漏屏障層沈積之 好的附著。在基減理的加賴環過針，表、 广 =來源。前處理用來在屏障沈積之前縣板表面移除二=: ，此外’以ALD進行的沈積可能需要進行表面前處理以使‘ 表面較易與沈積丽驅物結合以改善屏障層沈積品質。 土 主1遷移(EM，Electr〇-migration)對於金屬配線而言為孰 ，度問題，是由電子以電流的方向及電流密麟決定的速率推 及移動金屬原子所造成。銅線中的舰是一種表面現象。口嬰 銅自由移動之處就會發生，典型的發生情況是在銅及另—；；固= i t具有不佳的附著的介面時~例如在銅/屏障或銅/背襯介面。屏 Tii’或背^的品質及保形顯齡影響銅配線的em特性。因 上進行ALD屏障及背襯層沈積，因為 表面可ίί::或其他污染物-段時間，已進行前處理的 積之前的屏障層及/或背襯層沈積之後的後處 ίϊίίίΞ移除雜質以改善銅在屏障層或背襯層之間附著。此曰 ，後處理可以增加銅種晶層沈積的成核:用 種晶層的薄膜品質。 j改口銅 择田在ΐΐ可知，需要―細配線之整合的基板表面處理及膜、允 積用之衣置及方法以具有改㈣金屬遷移雜及減少空洞增大 【發明内容】 廣泛而a，本發明實施例滿足銅配線之整合的美#$ & ==装置及方法的需求，以具有改=== =、方法、製程、裝置或系統。本發明的數個發明實施 在一實施例中，提供基板表面的處理裝置。此處ί里I置包括： 6 200832612 =持，基板支座韻置亦包括：近接頭，用以分送處 理氣體以處理用近接頭下基板表面的活性處理區域。該近接頭包 含：基板表面的活性處理區域以及近接頭，該近接頭g括至少^ 用以自近接頭及基板之間的反應空間抽出過多的處理氣體的真空 通道。近綱具有激發室’用以在處理氣體被分送·板表面= 活性處理區域部分上之前激發該處理氣體。 在另一實施例中，提供一種基板表面的處理方法。該方法包 ^ 括：將處理用近接頭表面處理用近接頭移動到基板之上，該近接 頭具有至少-用时送基板表_域上的處理氣職體通^表面 區域，該近接頭具有至少-用以自近_下敬應空間排出過多 響處魏義真空通道；__近接縣面處_近_覆蓋基 板^面區域。該方法亦包括：在分送處理氣體到基板表面區域1 之前，在近接頭的激發室内激發處理氣體。該方法更包括··分送 表面區域被激發的處理氣體於基板表面區域上以處理基板表面。 在另一實施例中，提供用以進行表面處理及薄膜沈積的腔 室。該腔室包括：第一基板表面處理用近接頭，用以分送第一處 理氣體以處理在第一基板表面處理用近接頭下方之基板表 分。該腔室亦包括：第一 ALD( atomic layer deposition，原子層、、尤 積)近接頭，用以依序分送第-反應氣體及第—清除氣體以沈^/ϋ • 一 ALD薄膜於第一 ALD用近接頭之下。 —在另一實施例中，提供一種在處理室内在基板上的表面處理 及薄膜沈積方法。該方法包括：將基板放置於具有複數個表面處 理^薄膜沈積用近接頭之處理室中。複數個近接頭中的每一個皆 - 覆蓋4刀的基板表面。该方法亦包括：移動前處理用近接頭到基 板表面區域之上。該方法更包括：利用前處理用近接頭在基板表 ^ 面區域上進行表面前處理。此外，該方法包括··移動ALD1 (原子 層沈積1)近接頭到基板表面區域之上。另外，該方法包括：利用 ALD1近接頭在基板表面上沈積銅之屏障層。 在另一實施例中，提供一種銅配線之在整合系統中的基板上 200832612 4膜的沈積方法。該方法包括：將基板移進具有複數俩近接頭的 處理室。選定的近接頭用以進行表面處理以及ALD的至少其一。 該處理室為整合系統的一部分。在處理室内，在基板表面而使用 數個作用為進行屏障層ALD的近接頭的其中之一進行屏障層沈 積。此外，該方法包括：從該處理室移動基板，經由整合系統的 傳送模組而進入銅種晶層沈積用處理模組。銅種晶層沈積用處理 、 模組為整合系統之一部分。在銅種晶層沈積用處理模組之内，在 * 基板表面進行銅種晶層沈積。該整合系統實現在該整合系統内完 成受控制環境下的移轉，以限制基板曝露於該整合系統外之未受 控制環境狀況。 /在另一實施例中’提供一套銅配線之在基板上沈積薄膜之整 合系統。該整合系統包括：具有複數個近接頭的處理室，選定的 近接頭供作表面處理以及ALD之用。該整合系統亦包括：連結於 該處理室的真空傳送模組，該真空傳送模組用以傳送該整合系統 中的基板。該整合系統更包括：銅種晶層沈積用處理模組。此外， 該整合系統包括：與銅種晶層沈積用處理模組連結的受控制環境 的傳送模組。另外，該整合系統包括：與真空傳送模組以及受控 制環境的傳送模組結合的真空預備室，該真空預備室用以輔助在 真空傳送模組及環境控制傳送模組之間傳送基板。該整合系統使 鲁 得在该整合系統内之受控制環境的移轉進行以限制基板曝露於該 整合系統外的未受控制環境的狀況。 本發明的其他樣態及優勢將可藉由下列附圖說明本發明原則 及範例詳細敘述而可更加清楚。 【實施方式】 " 在此詳述數個銅配線之整合的基板表面處理及薄膜沈積用之 裝置(或系統)及方法之例示實施例。在屏障層沈積前的基板前處理 可以移除表面污染物或可以活化表面以進行ALD ( atomic layer deposition ’原子層沈積）。在薄膜沈積之後的基板後處理可以移除 200832612 表物或準備基板表面以進行其他薄膜(如麵晶層)沈積。< 以將刖處理以及後處理用近接頭與ALD肖近接頭整合於腔室中以 ，成薄膜沈積以及絲處理。之後，將基板移人朗—整合系統 一的$種晶層沈積腔室以進行銅種晶層沈積。該基板在真空中進 灯傳，或在紐制魏巾進行傳送嫌獅露於減或接觸到其 他私物。沈積於清潔或活化表面的ALD屏障層、ald背概層、 及銅種曰曰層可以產生良好的EM (eiectr(>migrati〇n，電遷移)特性， 因而避免脫層以及空洞增大。 狀吾人，了解本發明可用數種方式實施，包括：製程、方法、 、或系統。以下說明本發明的數個發明實施例。顯然地對於 見、心本項技藝者而言，本發明可以無需在此提到的部分或是全部 的特定細節即可實施。 圖1A顯不配線結構在藉由使用雙重金屬鑲嵌法處理程序圖 案化之後的剖面範例。配線結構在基板5〇上並具有之前用來生產 形成金屬化線101的介電層100。金屬化典型為利用將溝槽蝕刻到 介電層100中並且接著用導電性材料(例如銅)填滿溝槽而產生。 在溝槽中有用以避免銅材料122擴散進入介電層丨⑻It is electrically connected to the transistor device to achieve the desired integrated circuit device. And /, and, the conductive layer is insulated from other conductive layers by a dielectric material. The production of sub-micron and smaller features is one of the next very large scale integrators (VLSI) and one of the ultra large scale integratiators (VLSI). Key technology. However, reducing the size of wiring in VLSI and ULSI technologies has created a need for processing performance. As the circuit density increases, the width of the voids, contacts, and other features, and the dielectric material therebetween, decreases the shame-micron size (that is, less than _micron or less)' thickness of the dielectric layer of the towel. Still _ roughly mosquitoes, resulting in an increase in the azimuthal ratio of the features (ie, height divided by width). At the time of processing, many of the old deposits were made to have a substantial hole in the sub-micron structure with an orientation ratio exceeding 4:1 and to be seamlessly filled. ,... Today, copper and its alloys have become the metal of choice for sub-micron wiring technology due to their lower resistance properties. The problem with copper is that copper can diffuse into helium, cerium oxide, and other dielectric materials, potentially damaging device integrity. Therefore, the conformal barrier layer gradually becomes important in avoiding copper interference. Copper may not adhere well to the barrier layer; therefore, it may be desirable to deposit a backing layer between the barrier layer and the copper. Conformal deposition of the backing layer is also important to provide good step coverage to aid copper adhesion and/or deposition. Conformal deposition of the barrier layer by deposition methods (eg, atomic layer deposition (ALD)) on the wiring features needs to occur on a clean surface 200832612 to be read in the screen and/or back and Good adhesion of the drain barrier layer deposited thereon. In the base reduction of the Jialai ring over the needle, the table, wide = source. The pretreatment is used to remove the surface of the county plate prior to barrier deposition. Two:: In addition, deposition by ALD may require surface preparation to make the surface easier to combine with the deposited precursor to improve barrier layer deposition quality. The EM (Electr〇-migration) is a problem with metal wiring, which is caused by electrons pushing the metal atoms at a rate determined by the direction of the current and the current. The ship in the copper wire is a surface phenomenon. Mouth-infant copper is free to move where it occurs, typically in copper and another; when solid = i t has a poorly attached interface ~ for example in a copper/barrier or copper/backing interface. The quality of the screen Tii' or back and the age of the conformal influence the em characteristics of the copper wiring. Due to the ALD barrier and backing layer deposition, because the surface can be ίί:: or other contaminants - the time period, the barrier layer before the pre-treatment product and / or the back layer after the deposition layer ίϊίίίΞ remove impurities To improve the adhesion of copper between the barrier layer or the backing layer. In this case, post-treatment can increase the nucleation of copper seed layer deposition: the film quality of the seed layer. j changed the copper to choose the field in the ΐΐ, we need to know the integration of the thin surface of the substrate surface treatment and film, the clothing and methods for the use of the device to change (4) metal migration and reduce the increase in voids [invention] Widely a, Embodiments of the present invention address the need for an integrated ## &== device and method for copper wiring to have a modified ====, method, process, apparatus, or system. Several Inventions of the Invention In one embodiment, a processing apparatus for a substrate surface is provided. Here, the ίi I set includes: 6 200832612 = Hold, the substrate support also includes: a proximal joint for dispensing the treatment gas to treat the active treatment area of the surface of the lower substrate with the proximal joint. The proximal joint comprises: an active treatment area on the surface of the substrate and a proximal joint, the proximal joint g including at least a vacuum passage for extracting excess process gas from the reaction space between the proximal joint and the substrate. The near-frame has an excitation chamber' for exciting the process gas before the process gas is dispensed onto the surface of the plate = active treatment zone. In another embodiment, a method of processing a substrate surface is provided. The method includes: moving a proximal joint for processing a proximal surface to a substrate, the proximal joint having at least a processing gas surface area on the substrate surface, the proximal joint having at least - Used to evacuate the Weiyi vacuum channel from the near _ lower respect space; __ near the county level _ near _ covering the substrate ^ surface area. The method also includes exciting the process gas in the excitation chamber of the proximal joint prior to dispensing the process gas to the substrate surface region 1. The method further includes dispensing the processing gas excited by the surface region on the surface area of the substrate to process the surface of the substrate. In another embodiment, a chamber for surface treatment and film deposition is provided. The chamber includes a first substrate surface treatment proximal joint for dispensing the first process gas to process the substrate surface below the first substrate surface treatment proximal joint. The chamber also includes a first ALD (atomic layer deposition, atomic layer), for sequentially dispensing the first reaction gas and the first removal gas to sink the ϋ film. An ALD is used under the proximal joint. - In another embodiment, a surface treatment and thin film deposition method on a substrate within a processing chamber is provided. The method includes placing a substrate in a processing chamber having a plurality of surface treatments for film deposition. Each of the plurality of proximal joints - covering the surface of the substrate of 4 knives. The method also includes moving the front joint for the pre-treatment to the surface area of the substrate. The method further comprises: performing surface pretreatment on the surface area of the substrate by using a front joint for pretreatment. In addition, the method includes moving the ALD1 (atomic layer deposition 1) near-junction to the surface area of the substrate. Additionally, the method includes depositing a barrier layer of copper on the surface of the substrate using an ALD1 proximal joint. In another embodiment, a method of depositing a copper wiring on a substrate in an integrated system 200832612 4 is provided. The method includes moving a substrate into a processing chamber having a plurality of proximal joints. The selected proximal joint is used for surface treatment and at least one of ALD. The processing chamber is part of an integrated system. In the processing chamber, barrier layer deposition is performed on one of the plurality of proximal joints acting as the barrier layer ALD on the surface of the substrate. In addition, the method includes moving a substrate from the processing chamber and entering a copper seed layer deposition processing module via a transfer module of the integrated system. The treatment of copper seed layer deposition and module are part of the integrated system. In the processing module for depositing copper seed layer, copper seed layer deposition is performed on the surface of the * substrate. The integrated system enables the transition in a controlled environment within the integrated system to limit the exposure of the substrate to uncontrolled environmental conditions outside of the integrated system. In another embodiment, an integrated system for depositing a thin film on a substrate is provided. The integrated system includes a processing chamber having a plurality of proximal joints, selected proximal joints for surface treatment and ALD. The integrated system also includes a vacuum transfer module coupled to the processing chamber for transporting the substrate in the integrated system. The integrated system further includes: a processing module for depositing a copper seed layer. In addition, the integrated system includes a transfer module of a controlled environment coupled to a processing module for depositing a copper seed layer. Additionally, the integrated system includes a vacuum preparation chamber in combination with a vacuum transfer module and a transport module in a controlled environment for assisting in transporting the substrate between the vacuum transfer module and the environmental control transfer module. The integrated system allows Lude to move the controlled environment within the integrated system to limit the exposure of the substrate to an uncontrolled environment outside of the integrated system. Other aspects and advantages of the invention will be apparent from the description and appended claims. [Embodiment] " An exemplary embodiment of an apparatus (or system) and method for integrated substrate surface treatment and thin film deposition of a plurality of copper wirings will be described in detail. Substrate pre-treatment prior to deposition of the barrier layer may remove surface contaminants or may activate the surface for ALD (atomic layer deposition). Post-processing of the substrate after film deposition may remove the 200832612 surface or prepare the substrate surface for deposition of other films, such as a matte layer. < The ruthenium treatment and the post treatment are integrated into the chamber with a proximal joint and an ALD smear joint for film deposition and silk treatment. Thereafter, the substrate is transferred to a seed-layer deposition chamber of the integrated system to perform copper seed layer deposition. The substrate is transferred to a light in a vacuum, or is conveyed in a New Zealand Wei towel to reduce or expose to other private objects. The ALD barrier layer, the ald back layer, and the copper seed layer deposited on the clean or activated surface can produce good EM (eiectr(> migrati〇n, electromigration) characteristics, thereby avoiding delamination and voiding. The present invention may be embodied in a number of ways, including: processes, methods, or systems. Several embodiments of the invention are described below. It will be apparent to those skilled in the art that the present invention may be omitted. Part or all of the specific details mentioned herein can be implemented. Figure 1A shows an example of a cross-section of a wiring structure after patterning by using a dual damascene process. The wiring structure is on the substrate 5 and has the previous use. The dielectric layer 100 forming the metallization line 101 is produced. Metallization is typically produced by etching a trench into the dielectric layer 100 and then filling the trench with a conductive material such as copper. To avoid diffusion of copper material 122 into the dielectric layer (8)

P章層120。屏障層120可由PVD氮化紐(TaN)、PVD纽(Ta)、ALD 氮化組、或這些薄膜的組合所組成；也可以使用其他屏障層 另外H見層可以在屏障層120及銅材料122之間沈積以增加錮 材料122及屏障層120之間的附著。另一屏障層1〇2沈積於 化的銅材料122表面以在介層洞114經由覆於其上的介電材 104、106蝕刻到屏障層1〇2之時，保護銅材料122免於不成孰 氧化。屏障層1〇2也用以作為選擇性的侧停止劑及銅擴散屏= 屏障層102之例示材料包括氮化石夕(SiN)或碳化石夕(沉）。 將經介電層104沈積於屏障層1〇2之上，經介電層1⑽ 介電常數材料所製。覆蓋在經介電層1〇4上的是溝槽介電層 溝槽介電層106可以是低介電常數且與層1〇4相同或不同9的° 的介電材料。在一實施例中，經介電層以及溝槽介電層兩者比= 200832612 ，同材料所製，而且同時進行沈積以形成連續性的薄膜。在溝槽 介，層106進行沈積之後，包含上述結構的基板5〇藉由已知技術 進行圖形化及韻刻程序以形成介層洞n4以及溝槽n6。 ^圖顯示在形成介層洞114及溝槽116之後，屏障層13Θ、 選擇性的背襯層131、以及銅層132沈積到線而填滿介層洞114及 /冓才曰116屏卩早層13〇可以是現成材料(例如氮化钮(TaN)、组(Ta)、 釕(Ru))、或是這些薄膜的混合。屏障層材料可為其他的耐火金屬 化合物所製，包括但不限於··鈦(Ti)、氮化鈦(TiN)、鎢(w)、鍅(Zr)、 铪(巧、銦(Mo)、鈮(Nb)、釩(V)、及鉻(Cr)、以及其他。P chapter layer 120. The barrier layer 120 may be composed of a PVD nitride (TaN), a PVD New Zealand (Ta), an ALD nitride group, or a combination of these films; other barrier layers may also be used. Further, the H layer may be in the barrier layer 120 and the copper material 122. The deposition is between to increase the adhesion between the tantalum material 122 and the barrier layer 120. Another barrier layer 1〇2 is deposited on the surface of the copper material 122 to protect the copper material 122 from being formed when the via 114 is etched into the barrier layer 1〇2 via the dielectric material 104, 106 overlying it. Oxidation. Barrier layer 1〇2 is also used as a selective side stop agent and copper diffusion screen = an exemplary material for barrier layer 102 includes Nitride Xi (SiN) or carbon carbide (Sink). The dielectric layer 104 is deposited over the barrier layer 1 , 2 and made of dielectric layer 1 (10) dielectric constant material. Overlying the dielectric layer 1〇4 is a trench dielectric layer. The trench dielectric layer 106 may be a dielectric material having a low dielectric constant and the same or different 9° as the layer 1〇4. In one embodiment, both the dielectric layer and the trench dielectric layer are made of the same material as = 200832612, and simultaneously deposited to form a continuous film. After the trenches are deposited and the layer 106 is deposited, the substrate 5 comprising the above structure is patterned and rhymed by known techniques to form vias n4 and trenches n6. The figure shows that after forming the via 114 and the trench 116, the barrier layer 13, the selective backing layer 131, and the copper layer 132 are deposited to the line to fill the via 114 and/or the screen 116 The layer 13 can be a ready-made material (such as a nitride button (TaN), a group (Ta), a ruthenium (Ru)), or a mixture of these films. The barrier layer material can be made of other refractory metal compounds, including but not limited to titanium (Ti), titanium nitride (TiN), tungsten (w), germanium (Zr), germanium (indium, indium (Mo), Niobium (Nb), vanadium (V), and chromium (Cr), and others.

>、遥擇性的背襯層131可以是現成材料，例如钽(Ta)及釕(Ru) 等。襯層材料可以是其他耐火金屬化合物，包括但不限於：鈦 (Τι)、氮化鈦(TiN)、鎢(W)、錯(Zr)、铪㈣、銦(m9)、鈮⑽）、釩 (V)、鉻(Cr)、以及其他。在使用這些廣泛所想到的材料的同時， 也可以使帛其他屏障層以及背襯層材料。接著沈積銅層以填> The remote selective backing layer 131 may be a ready-made material such as tantalum (Ta) and ruthenium (Ru). The lining material may be other refractory metal compounds including, but not limited to, titanium (Ti), titanium nitride (TiN), tungsten (W), mal (Zr), niobium (tetra), indium (m9), niobium (10), vanadium (V), chromium (Cr), and others. While using these widely contemplated materials, other barrier layers as well as backing layer materials can also be used. Then deposit a copper layer to fill

滿介層洞114以及溝槽116。可在沈積填隙的銅層132前，先 積銅種晶層133。 九U 士如同上述討論，在沈積金屬屏障層13〇之前，基板表面可能 侧介電層綱、1Ό6以及屏障層1〇2所殘留的污染物而使 =屬屏障層13Q接觸到銅材料122。可以用清潔程序(例如氮賤 射)^移除表面污_。也如同上述討論，由ALD所形成的 屏障層13〇保形沈積可能需要進行絲前處理 與沈積前驅物結合。原因在下說明。 H表面合易 原子層沈積(ALD)已知可用以產生具有良好的台階覆 膜。如圖2中賴示，ALD的典型達成方式係㈣具有^體於#盆 間吹掃的反應物多重脈衝(例如雙重脈衝）。就金屬屏而;；、， 含屏障金屬之反應物⑽201的脈衝被傳送到基板表面Y ^ 口生 ^氣體(P)202的脈衝。含屏障金屬之反應物2〇1的脈衝被傳g 基板表面以在基板表面上形成屏障金屬(例如钽)單岸。杏 中，清除氣體脈衝為電漿附加或電槳·輔助)氣體。^貝=列 200832612 组)連結於基板表面，基絲面可由介料(例如圖1A之低介電 材料104 106)戶斤‘，及/或導電性材料(例如圖a所示之銅材料 122)所製。沖洗氣體202從基板表面移除過量的含屏障金屬之反應 物201 〇 〜 在清除氣體202脈衝之後，反應物⑼2〇3脈衝被傳送到基板 表面。如果屏障材料含有氮(例如氮化组），反應物(聊3可為含 氮。反應物(B)203可為含氮氣體以與组在基板上形成氮化卜反 應物(B)2=的例子包括而3、A、及N〇。另外可能會用到的其 他含氮的前驅物氣體可以包括但不限於NxHy，其中X及 (例如，聯胺N2H4、氮氣電漿來源、二甲基聯胺_#(%)/、 他）°，屏障材料為含有少量氮或不含氮，反應物(B)203 可^氫之逛原氣體(例如㈦。氏為可與反應物嫩〇1中的屏障 金，反應進行配位結合以終止薄膜沈積的還原氣體。在脈衝加 2體脈衝204 °反應物m、b、以及清除氣體p可以是 增°在—實珊，反柳)2G3脈衝輔 然而’在某些情形中’基板表面不具有用以作為在表面上全 。阿能位置的足夠結合位置。㈤樣地，賴於表_含屏障金 ，反應物Μ(或前驅物)會結果形成足夠遙遠而變成⑤質不好的 之1ίΙΓϋ大ί粒狀。圖3顯示一ALD薄膜具有在沈積開始 有限的生長點生長的島狀部301。在島狀部301之 空洞3G3。基板表面(例如二氧化残低介電材料)ΐ以 ί ί ί i r不易與在含屏障金屬之反應物μ中的屏障金屬結 & s:日1 Γ0Η、〇、或氧基的表面處理可以有效率地***η〇ηThe via 114 and the trench 116. A copper seed layer 133 may be deposited prior to depositing the interstitial copper layer 132. As discussed above, before depositing the metal barrier layer 13 , the surface of the substrate may be contaminated with a layer of dielectric layer, 1Ό6, and barrier layer 1〇2 such that the barrier layer 13Q contacts the copper material 122. The surface stain _ can be removed by a cleaning procedure (such as nitrogen nitration). As also discussed above, the conformal deposition of the barrier layer 13 formed by ALD may require wire pre-treatment to bond with the deposited precursor. The reason is explained below. H Surface Atomic Layer Atomic Layer Deposition (ALD) is known to be used to produce a good step coating. As shown in Figure 2, the typical way of achieving ALD is to use (iv) multiple pulses (e.g., double pulses) of reactants that have a body wash. In the case of a metal screen;;, the pulse of the reactant (10) 201 containing the barrier metal is transmitted to the surface of the substrate Y ^ mouth ^ gas (P) 202 pulse. A pulse of the reactant metal containing barrier metal 2〇1 is transmitted to the surface of the substrate to form a barrier metal (e.g., ruthenium) on the surface of the substrate. In apricots, the purge gas pulse is a plasma-added or electric paddle-assisted gas. ^贝 = column 200832612 group) is attached to the surface of the substrate, and the base surface can be made of a dielectric material (for example, the low dielectric material 104 106 of FIG. 1A), and/or a conductive material (for example, the copper material 122 shown in FIG. ) made. Flush gas 202 removes excess barrier metal containing reactant 201 from the substrate surface. 在 After the purge gas 202 pulse, reactant (9) 2〇3 pulses are delivered to the substrate surface. If the barrier material contains nitrogen (eg, a nitrided group), the reactant (talk 3 may be nitrogen-containing. The reactant (B) 203 may be a nitrogen-containing gas to form a nitrided reactant on the substrate with the group (B) 2 = Examples include 3, A, and N. Other nitrogen-containing precursor gases that may be used may include, but are not limited to, NxHy, where X and (eg, hydrazine N2H4, nitrogen plasma source, dimethyl Hydrazine _# (%) /, he) °, the barrier material is containing a small amount of nitrogen or nitrogen, the reactant (B) 203 can be hydrogen storage of the original gas (for example, (seven). It can be associated with the reactants 1 In the barrier gold, the reaction is coordinated to terminate the deposition of the reducing gas. In the pulse plus 2 body pulse 204 ° reactant m, b, and the scavenging gas p can be increased in the -Shenshan, Fuliu) 2G3 pulse Supplementary, however, 'in some cases' the surface of the substrate does not have sufficient binding position to serve as a full surface on the surface. (5) Sample plots, depending on the table _ containing barrier gold, the reactant Μ (or precursor) will The result is a shape that is far enough to become a poor quality. Figure 3 shows that an ALD film has a deposition start. a limited growth point growth island 301. The cavity 3G3 in the island portion 301. The substrate surface (for example, a oxidized residual dielectric material) is not easily associated with the barrier metal-containing reactant μ. Barrier metal junction & s: surface treatment of 10Η, 〇, or oxy group can be efficiently inserted into η〇η

i Λ 1 目f含獅金屬之反麟Μ為高度反應的si-〇H 種置入刖處理電漿到含有基板的該處理室中可以推矣 Ϊ:種Γΐ日Γ例期的結合位置。為了要長出連續性的介面2 ί而ί 1卜實施例為在ALD前進行基板表面前處理而使得 表面更谷易進行ALD ’其原因為產生更多的沈積點。 200832612 上因為習知的ALD製程的沈積循環相對較長，從生產觀點而言 ，為一些屏障層或背襯層(例如釕)的沈積速率(或產量)過低。為改 。沈積速率，發明使用屏障層及/或背襯層的ALD用近接頭的新系 統及方法。圖4A顯示具有近接頭43〇的八1^反應器4〇〇之示意 圖、。在反應斋400中，具有放置在基板支座42〇之上的基板41〇。 < 將近接碩430支持於基板410之上，且僅覆蓋部分的基板表面。 在近接碩430以及基板41〇之間具有反應空間45〇。 ^ 將進氣口 440及真空管線465連結於近接頭430。進氣口 440 供應反應物以及清除氣體到製程處理室4〇〇。可將進氣口 44〇連結 φ 於數，儲存反應物以及清除氣體的容器。可將進氣口 440連結於 儲，第一反應物(例如為圖2中所述反應物M)的容器441。也可將 進^ 口 440連結於供應第二反應物(例如：圖2中所述反應物B) 的容器443。如上所述，反應物B可為電漿輔助。反應物B可由 產生電漿化的反應物B的反應器443,供應。另外，基板支座420 I連結於射頻(RF)產生器以在反應物B被分送入反應空間45〇之 日守產生反應物B的電漿，而非從反應器443,供應電漿化之反應物 另一個替代方案是結合一射頻產生器473至近接頭430以產生 電漿。在一實施例中，在電漿產生過程中，一電極連結於射頻產 生器而另一電極接地。 鲁 "進氣口 440連結於儲存清除氣體的容器445。反應物Μ、清 除氣體以及反應物Β可被載體氣體(可為惰性氣體)所稀釋。在ALD 沈積循環中，供應反應物M、B以及清除氣體p之其一到進氣口 44〇 °此等氣體的氣體供應開啟與關閉係由閥45卜453及奶所 • ，制。真空管線465的另一末端為真空幫浦460。圖4a中的反應 ^ 空間450甚小於習知的ALD腔室的反應空間。屏障層的近接頭 ^ ALD的沈積速率可為習知ALD的沈積速率之1〇倍或更高。 圖4B顯示一實施例，其中將近接頭"ο放置在基板41〇之 上’並具有值於近接頭430及基板410之間的反應空間450。反應 空間450之下的基板表面為活性表面區域457。近接頭430具有一 12 200832612 或多個供應反應物Μ、B、或清除氣體p的氣體通道411。在氣體 通道411的兩側具有真空通道413、415，用以從反應空間450吸 取過多的反應物Μ、B、清除氣體及/或反應物副產品。反應物μ、 Β、以及清除氣體Ρ經由氣體通道411以如圖2中顯示的順序持續 地通過。氣體通道411連結於進氣口 44〇。在氣體的脈衝之時，反 應物Μ、Β、或Ρ之其一從氣體通道411被注入到基板表面，藉由 ， 真空通迢413、415從基板表面抽走過量氣體，而可保持反應空間 較小以減少清除或吸取時間。因為反應空間很小，因此只需少量 …反應物以覆蓋小的反應空間。同樣地只需用少量的清除氣體以自 反應空間450吹掃過多反應物。此外，真空通道就位於小反應空 • 間450附近，小反應空間450可以辅助從基板表面吸取及清除過 多反應物、清除氣體以及反應副產品。因此，可以大量地減少反 應物Μ、Β以及清除氣體之個別脈衝時間么丁乂、 ALD用近接頭也可具有數侧，以不同側分送不同類型的處理 氣體。從-_另-綱補近翻麟完成ALD彳練及沈積 膜。 、 如同上述討論，為了長成連續性的介面及簿膜，太路日曰仏一i Λ 1 目 f The lion metal is the highly reactive si-〇H species. The treatment plasma can be pushed into the processing chamber containing the substrate. Ϊ: The binding position of the species in the daytime. In order to grow a continuous interface 2, the embodiment is to perform pre-treatment of the substrate surface before ALD to make the surface more ALD ‘the reason for producing more deposition points. Since the deposition cycle of the conventional ALD process is relatively long in 200832612, the deposition rate (or yield) of some barrier layers or backing layers (e.g., germanium) is too low from a production standpoint. To change. Deposition rate, a novel system and method for inventing ALD proximal joints using barrier layers and/or backing layers. Fig. 4A shows a schematic view of an eight-reactor 4〇〇 having a proximal joint 43〇. In the reaction medium 400, there is a substrate 41〇 placed on the substrate holder 42A. < The proximity 430 is supported on the substrate 410 and covers only a portion of the substrate surface. There is a reaction space 45 〇 between the proximity 430 and the substrate 41 〇. ^ The air inlet 440 and the vacuum line 465 are coupled to the proximal joint 430. Inlet 440 supplies reactants and purges gases to the process chamber 4〇〇. The inlet port 44〇 can be connected to φ, the reactants and the gas-removing container. The inlet 440 can be coupled to a vessel 441 that stores a first reactant (e.g., reactant M as described in Figure 2). The inlet 440 can also be coupled to a vessel 443 that supplies a second reactant (e.g., reactant B as described in Figure 2). As noted above, reactant B can be plasma assisted. Reactant B can be supplied from reactor 443 which produces a pulverized reactant B. In addition, the substrate holder 420I is coupled to a radio frequency (RF) generator to maintain the plasma of the reactant B on the day when the reactant B is dispensed into the reaction space 45, instead of supplying the plasma from the reactor 443. Another alternative to the reactants is to combine a RF generator 473 to a proximal joint 430 to produce a plasma. In one embodiment, during plasma generation, one electrode is coupled to the RF generator and the other electrode is coupled to ground. The "air inlet 440 is coupled to a container 445 that stores purge gas. The reactant enthalpy, the purge gas, and the reactant enthalpy may be diluted by a carrier gas (which may be an inert gas). In the ALD deposition cycle, one of the reactants M, B and the purge gas p is supplied to the intake port 44 〇 ° The gas supply of these gases is opened and closed by the valve 45 453 and the milk. The other end of the vacuum line 465 is a vacuum pump 460. The reaction ^ space 450 in Figure 4a is much smaller than the reaction space of a conventional ALD chamber. The near junction of the barrier layer ^ ALD can be deposited at a rate that is 1 〇 or higher than the deposition rate of conventional ALD. Figure 4B shows an embodiment in which a proximal joint " is placed over the substrate 41' and has a reaction space 450 between the proximal joint 430 and the substrate 410. The surface of the substrate below the reaction space 450 is the active surface area 457. The proximal joint 430 has a 12 200832612 or a plurality of gas passages 411 that supply reactants Μ, B, or purge gas p. Vacuum channels 413, 415 are provided on both sides of the gas passage 411 for absorbing excess reactants B, B, purge gases and/or reactant by-products from the reaction space 450. The reactants μ, Β, and purge gas 持续 are continuously passed through the gas passage 411 in the order as shown in Fig. 2. The gas passage 411 is coupled to the intake port 44A. At the time of the pulse of the gas, one of the reactants Β, Β, or Ρ is injected from the gas passage 411 to the surface of the substrate, and the vacuum vents 413, 415 draw excess gas from the surface of the substrate to maintain the reaction space. Smaller to reduce the purge or draw time. Because the reaction space is small, only a small amount of ... reactants are needed to cover the small reaction space. Similarly, only a small amount of purge gas is required to purge excess reactants from reaction space 450. In addition, the vacuum channel is located near the small reaction space 450, which assists in the extraction and removal of excess reactants, purge gases, and reaction by-products from the substrate surface. Therefore, the individual pulse times of the reactants Β, Β, and purge gas can be greatly reduced. The ALD proximal joints can also have several sides, and different types of process gases can be distributed on different sides. From the -_ another-class complement to the lining to complete the ALD training and deposition film. As discussed above, in order to grow into a continuous interface and film,

Τα。結果，ALD循環時間可以減少而產量可以增加。 意圖。在腔室500中，具有放置) 近接頭530支持於基板51〇之上 -签败衣曲逼理用的腔室5〇〇之示 令基板支座520上之基板51〇。將 。在近接頭530及基板510之間'， 13 200832612 具J反應空間550。因為近接頭530僅覆蓋部分基板表面，因此反 應空間550可以遠小於習知之應用到全部基板表面之表面處理。 將進氣口 540及真空管線565連結於近接頭530。真空管線 565的另一末端為幫浦56〇。進氣口 54〇供應反應氣體至製程處7理 室ρο。過多處理氣體從反應空間550藉由真空管線565被吸走。 進，口 540可以連結於儲存處理氣體(例如Kb)的容器541。可用惰 • 性土體以稀釋處理氣體。如上所述，處理氣體可為電漿輔助。在 • 一實施例中，電漿化的處理氣體藉由電漿化處理氣體的反應器 541’供應。另外，在分送處理氣體到反應空間55〇之時，基#^座 應 520可以連結於射頻(RF)產生器57〇以產生電漿以電漿化處理氣 響 體，而非從反應器541，供應電漿化的處理。另一個替代方案為結 合射頻產生器570至近接頭530以產生電漿。可用惰性氣體來維 持腔室壓力或維持電漿。 、 、，圖5B顯示一實施例，具有放置於基板51〇之上近接頭53〇， 並具有在近接頭530及基板510之間的反應空間55〇。近接頭53〇 具有一或數個供應處理氣體的氣體通道511。氣體通道511的兩側 上具有用以吸取從反應空間550來的過多處理氣體的真空通道 513、515。氣體通道511連結於處理氣體的容器。當從氣體通道 511注入處理氣體到基板表面之時，過量氣體藉由將反應空間限制 • 在近接頭530實質上下方的真空通道513、515從基板表面被吸走。 圖6A顯示基板510之頂部之上圖5八及56的處理用近接頭 表面處理用近接頭530實施例之俯視示意圖。各個關於處理用近 接頭表面處理用近接頭實施例的敘述也可運用於圖4八及4]5中的 • 基板41()之上的ALD用近接頭430。近接頭530移動通過基板表 面。在此貫施例中，近接頭的長度lph相同於或大於基板半徑。 ‘ 近接頭下的反應空間覆蓋在下面的基板表面。藉由移動近接頭通 過基板一次，處理氣體處理全部基板表面，其中處理氣體可為以 電漿、燈絲、紫外線、或藉由雷射激發的。在另一實施例中，將 基板510移動到近接頭530之下。還有在另一個實施例中，近接 14 200832612 頭530以及基板510兩者皆移動，以相反方向移動以通過彼此。 可由近接頭530移動通過基板510的速度控制基板接受表面處理 的程度。 或者，近接頭長度LPH可較基板半徑短。多個通過基板近接 頭兄〇’的通道為在基板表面上沈積薄屏障層或背襯層所需。圖6b 顯不近接頭530’具有短於基板半徑的近接頭長度LpH，。近接頭53〇, 在通道1移動通過基板表面之後，近接頭53〇,可向下移動以在通 道2及通道3中移動通過基板。在通道3末端，以 之薄層沈積全部基板表面。 圖6C顯示另一個沿者基板51〇表面旋轉的近接頭$如，，之實 施例。在此實施例中，供應處理氣體到連接至近接5 = 進氣口 540，。真空管線565,也接合到近接頭53〇，，末端。末而勺 圖6D顯示實施例中圖5A中之近接頭53〇的仰^圖。近接頭 530具有以數個氣體注射孔521連結於氣體通道511的氣體注射頭 501。圖6D顯示氣體注射孔521的配置及形狀僅為例子，也可使 用其他注射孔配置及注射孔形狀。在一實施例中，注射頭5〇1僅 有窄開縫(未顯示），而非注射孔。另外，舉例而言，可能會有二 或更多排的注射孔，而非只有一排。注射孔可以交錯或並排。注 射孔的形狀可是圓的、方的、六角形的或其他形狀。近接頭5邓 也有真空頭503、505，連結於氣體注射頭5〇1兩側的真空通道 513、515。在此實施例中，真空頭5〇3、5〇5為二開縫了 =可 其他幾何形狀的真空頭。另外，連接真空頭5G3及5()5開缝 成一個圍繞氣體注射頭501的單一開縫503，，如圖6E中所 頭530”，。上述也可將各個處理用近接頭表面處理崎接狀 例為運用於ALD用近接頭。 、、 除了在近接頭下放置基板，也可將基板放置於近接 處理基板表面。圖6F顯示放置於基板51〇之下的近接5 意圖，具有面對近接頭530的基板510之活性表面。' ^ 產可於活性表面S55之上。藉由裝置(未顯示）將基板51〇、懸掛於 15 200832612 近接頭530之上。近接頭53〇也由機械裝置(未顯示)所支持。 如同上述时論，處理氣體可被熱激發。處理氣體可藉由熱燈 j熱激發。圖7A顯示近接頭53〇*，具有激發室566中的氣體 t的m燈絲561以在處理氣體到達基板表面之前加熱處 、二二上述也討論縣面處理可以用雷射或紫外線激發的氣體 ^丁。，7B顯示近接頭53G**具有可為雷射或紫永線燈源之 563以在激發室564中激發處理氣體。 如同上述討論可將處理氣體電漿化。圖7C顯示近接頭53〇具 有，發室568以電椠化氣體管線54〇所供應的處理氣體。將近接、 於如圖5A所述之射頻產生器573。將基板支座52〇接地。 、:顯不另一實施例，其中，將近接頭53〇接地以及將基板支座 連…於射頻電源570，如同圖5A所顯示者。 顯示在基板810上沈積的薄屏障層或背襯層82〇之剖面 圖:在基板810的邊緣，薄屏障層或背襯層82〇的小切面821係 =近接頭之下。在沈積切面821之後，將近接頭向左移動以沈 一個切面822，切面822與切面821有些微重疊。切面823 在切面822之後，然後切面824接在切面823之後，並依此 ^在基板的其他侧’沈積製程停止而形成完成的細δ2〇。在I 貝施例中，基才^ 810 e進行前處理以增加在基板表面上的生長點。 、*一1，上述纣娜，由屏障層及/或背襯層所沈積的基板可能需要 口 = 清潔基板表面或準備基板表面以沈積具有較佳薄膜 =二j LD。ALD用近接頭、前處理用近接頭、及/或後處理 =接，可以^合於單_製程處理室以完成沈積及處理製程。對於 薄屏障層(例如氮化组)沈積及背襯層(例如対)沈積的基、， ιϊϊίϊ行前處理以清潔基板表面或基板表面可進行前處理以 ^備Ϊ行ALD沈積，如同上述討論。在沈積(背襯層沈積)之 一，土板表面可進行後處理以準備表面進行銅種晶層沈積。在單 二以，整合沈積/處_理室中，紐進行祕舰沈積屏 月襯a，然後進行後處理。目9八顯示基板㈣，具有複數個^基 16 200832612 及沈積頭。前處理用近接頭620用以前處理 面為雜處理£域670。靠近·_近接頭62 T 接頭630。在_近接頭630^ :ΐί 除雜質或準備基板表面進行接著的銅種 =ΪΪ幻ΐ用近接頭_進行後處理。各個近接頭依序 岐成處理並沈積於絲。處理及沈積製程可 可以用許多種類的材料製造近接頭 =二鋼、氧化_2〇3)、石英、碳化且 處理氣體(例如Η2及顺3之類)而言，石英為 子之尤 在背襯層沈積之前進行表面▲理。圖9Β:示= 插二Τα. As a result, the ALD cycle time can be reduced and the yield can be increased. intention. In the chamber 500, there is placed a proximal joint 530 supported on the substrate 51A - the chamber 51 of the substrate holder 520 is shown to be defeated by the chamber 5 for the cleat. Will. Between the proximal joint 530 and the substrate 510 ', 13 200832612 has a J reaction space 550. Since the proximal joint 530 covers only a portion of the substrate surface, the reaction volume 550 can be much smaller than the conventional surface treatment applied to the entire substrate surface. The air inlet 540 and the vacuum line 565 are coupled to the proximal joint 530. The other end of the vacuum line 565 is a pump 56. The intake port 54 〇 supplies the reaction gas to the process chamber 7 ρο. Excessive process gas is drawn away from reaction space 550 by vacuum line 565. The inlet 540 can be coupled to a container 541 that stores a process gas (e.g., Kb). An inert soil can be used to dilute the process gas. As noted above, the process gas can be plasma assisted. In an embodiment, the plasmad process gas is supplied by a reactor 541' for slurrying the process gas. In addition, when the process gas is distributed to the reaction space 55, the base 520 may be coupled to a radio frequency (RF) generator 57 to generate a plasma to plasma treat the gas, instead of the reactor. 541, supply of plasma treatment. Another alternative is to combine the RF generator 570 to the proximal connector 530 to produce a plasma. An inert gas can be used to maintain chamber pressure or maintain plasma. FIG. 5B shows an embodiment having a proximal contact 53〇 placed on the substrate 51A and having a reaction space 55〇 between the proximal joint 530 and the substrate 510. The proximal joint 53 has one or several gas passages 511 for supplying a process gas. The gas passages 511 have vacuum passages 513, 515 on both sides for drawing excess process gas from the reaction space 550. The gas passage 511 is coupled to a vessel for processing the gas. When the process gas is injected from the gas passage 511 to the surface of the substrate, the excess gas is restricted from the reaction space by the vacuum passages 513, 515 substantially below the proximal joint 530. Figure 6A shows a top plan view of the embodiment of the proximal joint 530 for surface treatment of the treatment of Figures 5 and 56 above the top of the substrate 510. The description of each of the proximal joint embodiments for the treatment of the proximal surface of the joint can also be applied to the ALD proximal joint 430 on the substrate 41 () in Figs. 4 and 4]. The proximal joint 530 moves through the surface of the substrate. In this embodiment, the length lph of the proximal joint is the same as or greater than the radius of the substrate. ‘The reaction space under the near joint covers the surface of the substrate below. The process gas treats all of the substrate surface by moving the proximal connector through the substrate once, wherein the process gas can be excited by plasma, filament, ultraviolet light, or by laser. In another embodiment, the substrate 510 is moved under the proximal joint 530. In still another embodiment, the proximity 14 200832612 head 530 and the substrate 510 both move, moving in opposite directions to pass each other. The extent to which the substrate can be subjected to surface treatment can be controlled by the speed at which the proximal joint 530 moves through the substrate 510. Alternatively, the proximal length LPH can be shorter than the substrate radius. A plurality of passages through the substrate proximate is required to deposit a thin barrier layer or backing layer on the surface of the substrate. Figure 6b shows that the proximal joint 530' has a proximal length LpH that is shorter than the radius of the substrate. The proximal joint 53A, after the passage 1 has moved through the surface of the substrate, the proximal joint 53 is moved downward to move through the substrate in the passage 2 and the passage 3. At the end of the channel 3, a thin layer of all substrate surfaces is deposited. Fig. 6C shows another embodiment of a proximal joint that rotates along the surface of the substrate 51. In this embodiment, the process gas is supplied to connect to the proximity 5 = air inlet 540. Vacuum line 565, also joined to the proximal joint 53〇, end. Figure 6D shows the elevation of the proximal joint 53A of Figure 5A in the embodiment. The proximal joint 530 has a gas injection head 501 coupled to the gas passage 511 by a plurality of gas injection holes 521. Fig. 6D shows that the configuration and shape of the gas injection hole 521 are merely examples, and other injection hole configurations and injection hole shapes can be used. In one embodiment, the injection head 5〇1 has only a narrow slit (not shown), rather than an injection hole. Also, for example, there may be two or more rows of injection holes, rather than just one row. The injection holes can be staggered or side by side. The shape of the perforation can be round, square, hexagonal or other shape. The proximal joint 5 Deng also has vacuum heads 503 and 505 connected to vacuum passages 513 and 515 on both sides of the gas injection head 5〇1. In this embodiment, the vacuum heads 5〇3, 5〇5 are two slits = vacuum heads of other geometries. In addition, the connecting vacuum heads 5G3 and 5() 5 are slit into a single slit 503 surrounding the gas injection head 501, as shown in Fig. 6E, head 530". The above treatment can also be used for the surface treatment of the proximal joints. The example is applied to the ALD proximal joint. In addition to placing the substrate under the proximal joint, the substrate can also be placed on the surface of the proximity processing substrate. Fig. 6F shows the proximity 5 placed under the substrate 51〇, with the face facing The active surface of the substrate 510 of the joint 530 can be produced on the active surface S55. The substrate 51 is slid by a device (not shown) over the 15 200832612 proximal joint 530. The proximal joint 53 is also mechanically Supported by (not shown). As mentioned above, the process gas can be thermally excited. The process gas can be thermally excited by the heat lamp j. Figure 7A shows the proximal joint 53〇* with the m filament of the gas t in the excitation chamber 566 561 to heat the gas before the treatment gas reaches the surface of the substrate, and the above discussion also discusses the gas that can be excited by laser or ultraviolet light. The 7B shows that the proximal joint 53G** has a laser or violet light. 563 of the source to the excitation chamber 564 Excitation of the process gas. The process gas can be plasmad as discussed above. Figure 7C shows that the proximal joint 53 has a process gas supplied by the chamber 568 as an electrified gas line 54. The proximity is as described in Figure 5A. The RF generator 573. The substrate holder 52 is grounded. Another embodiment is shown in which the proximal connector 53 is grounded and the substrate holder is connected to the RF power source 570, as shown in Figure 5A. A cross-sectional view of the thin barrier layer or backing layer 82 deposited on the substrate 810: at the edge of the substrate 810, a thin barrier layer or a small cut surface of the backing layer 82A is under the proximal joint. After the deposited cut surface 821 The proximal joint is moved to the left to sink a cut surface 822, and the cut surface 822 slightly overlaps the cut surface 821. The cut surface 823 is after the cut surface 822, and then the cut surface 824 is connected behind the cut surface 823, and the deposition process is stopped on the other side of the substrate. And the finished fine δ2〇 is formed. In the I shell example, the base 810 e is pretreated to increase the growth point on the surface of the substrate., *1, the above-mentioned enamel, by the barrier layer and/or the backing Substrates deposited on the layer may need = Clean the surface of the substrate or prepare the surface of the substrate for deposition with a preferred film = two nd LD. Near-joint for ALD, near-junction for pre-treatment, and/or post-treatment = can be combined in a single-process chamber to complete deposition And processing processes. For thin barrier layer (such as nitrided layer) deposition and backing layer (such as germanium) deposition, pre-treatment to clean the substrate surface or substrate surface can be pre-treated for ALD deposition As discussed above, in one of the deposition (backing layer deposition), the surface of the soil plate can be post-treated to prepare the surface for copper seed layer deposition. In the single and second, integrated deposition / treatment, the new secret The ship is screened with a screen lining a and then post-treated. The display substrate (4) has a plurality of bases 16 200832612 and a deposition head. The pre-treatment proximal joint 620 uses the previously treated surface as a miscellaneous treatment zone 670. Close to the _ proximal joint 62 T joint 630. In the _ near joint 630^: ΐί In addition to impurities or preparation of the surface of the substrate for the next copper species = ΪΪ ΐ ΐ with the near joint _ post-processing. Each of the proximal joints is sequentially processed and deposited on the wire. The processing and deposition processes can be made with many types of materials such as near joints = 2 steel, oxidized 2 〇 3), quartz, carbonized and process gases (such as Η 2 and cis 3). Quartz is especially for the back. Surface lining is performed prior to deposition of the liner. Figure 9: Show = insert two

季處理f里室可以與其他沈積、基板清潔、或處理 ΐ、、^πδ ^元成線沈積。ALD用近接頭也可與另一個ALD L-s敕^^頭及在同一 ALD沈積處理室的前處理及後處理用近 接頭正5以完成屏障/背襯層沈積。 士的接頭及要進行表面處理的基板之間之間隔距離為短的’ =^到10醜之間。在⑽從侧到侧改變期間中，近接 1及基板之間的間隔距離係小於5mm(例如是lmm) 室 近接頭而言，不同近接頭基板表面之間的間隔距 近接碩也可用ALD之外的其他方法來沈積細。舉例來說， 17 200832612 >^^(CVD? Chemieal vapor deposition) 以銅電鍍而言，在基板表面上屏障層及/或種晶層的厚度 而^旱以具有足以進行銅電鍍之低薄層電阻。cvd近接頭糾5在 腔^中整合ALD用近_。在沈積郷屏障/背襯層之後，可以沈 積較少的保形CVD背襯層以增加全部屏障層及背襯層的厚度以 降低薄層電阻而可進行銅電鍍。The quarter treatment f chamber can be deposited with other deposits, substrate cleaning, or processing ΐ, ^πδ ^ elements. The ALD proximal joint can also be used with another ALD L-s head and a pre- and post-treatment proximal joint in the same ALD deposition chamber to complete the barrier/backing layer deposition. The distance between the joint of the person and the substrate to be surface treated is short between '=^ and 10 ug. During the (10) side-to-side change period, the distance between the proximity 1 and the substrate is less than 5 mm (for example, 1 mm). For the near-joint joint, the spacing between the surfaces of the different proximal joint substrates can also be used in addition to ALD. Other methods to deposit fine. For example, 17 200832612 >^^(CVD? Chemieal vapor deposition) In the case of copper electroplating, the thickness of the barrier layer and/or the seed layer on the surface of the substrate is dry to have a low-thin layer sufficient for copper plating. resistance. Cvd near joint correction 5 in the cavity ^ integrated ALD with near _. After depositing the barrier/backing layer, less conformal CVD backing layer can be deposited to increase the thickness of all barrier and backing layers to reduce sheet resistance for copper plating.

圖9C顯示近接頭655，可在基板61〇上以反應物a及b沈積 CVD(或是電漿增強cVD)薄膜。這樣的CVD近接頭也可與前處理 用近接頭、ALD用近接頭、或後處理用近接頭整合，可有許多種 =合。舉例而言，可能在ALD之後不需要後處理。因此，僅需要 鈾處理、ALD1近接頭、及/或ALD2。或是如圖9D所顯示的組人： 可以是前處理、ALD1、CVD及後處理。 、口 圖10A顯示基板71〇上的配線結構7〇〇的剖面圖。配線結構 700具有開口 705，而與屏障層720及選擇性的背襯層73〇'並^。 圖中使用屏P早層7如及背襯層730為例子。另外，可能有銅配 線之單一屏障層72〇。屏障層72〇以及背襯層73〇皆以ald沈 因為屏障層720及背襯層730都是以ALD製程沈積，因此沿〇著% 構特徵部的層720及背襯層730的薄膜厚度相當地一致。^一声° 的厚度層介於大約10A到大約5GA之間。屏障層及f襯層全音; 厚度(Tbl)介於大約20A到大約1〇〇人之間。 舉例而言，屏障層720為大約20人的氮化钽屏障層。背襯層 730為大約2〇A的釕背襯層。TBL大約是40A而其薄層電阻在大 約ΗΚΜ000Ω，這樣對於銅電鍍而言過高。銅電鍍製裎所需 層電阻大約在1Ω到大約10Ω之間。藉由在背襯層上增加大^⑻入 的釕’屏障/背襯層的全部薄層電阻大約為1〇到15Ώ，而夠低足 以進行銅電鍍，而沒有無電銅種晶層。請注意在背襯層（或屏障戶 上直接銅電鍍的最初步驟指的是藉由電鍍的銅種晶層。因此，二 要在特欲部上沈積另一層740以增加基板表面上全部屏障/北^ 厚度τΒυ而降低經薄層電阻到銅電鍍所需的大約⑴到1〇^之曰 18 200832612 間。在-實施例中’全部厚度Tbl，大約為献到2〇〇A之間。可 以用許多種方法來沈積屏障層或背襯層增加厚度。這些方法包 括，而不限於：CVD及物理氣相沈 deposition) ° 如圖9C中所述，近接頭也可用來進行沈積化學氣相沈積 (CV_膜。耩由使用-近接頭與與近接⑽沈積頭相似方式的 • CVD細使得CVD近細與制近細的表面纽及薄膜沈積 _ 卫具整合在一起。使用近接頭的CVD製程可以運用在廣大範圍的 製程情況巾。在-實施例巾，製程溫絲圍在大約：贼到4〇叱 之間。在另一實施例+，溫度範圍在大約300°C到大約350°C之間。 •在一實列中，製程壓力在大約ITorr到大約10Torr。可藉由可 達到10 Torr白勺渦輪幫浦進行處理氣體之抽空。在一實施例中， 在基板表面與面對基板的近接頭表面之間的間隔大約在到 10mm之間。在另-實施例中，間隔大約在3mm到7咖之間。 這樣的CVD近接頭也可稍在單—腔室巾的祕理用近接 頭、MJ)、用近接帛、或後處理用近接頭整合以進行基板表面處理 以及薄膜沈積。可以有許多種組合。使用圖1〇B巾所示的例子， 如圖10B所不，製程處理室可包括：前處理用近接頭乃^、用以 沈積屏障層的ALD1近接頭76〇、用以在屏障層上沈齡襯層的 鲁 2近接頭77〇、用沈積另一個背襯層的CVD近接頭78Θ、接 著是用以進行後處理用的後處理用近接頭79〇。 、主如反應空間=具有晶圓面積壓力(Pwap)。為進行表面處理(例如前 >月潔）’ Pwap的範圍大約為100 mT〇rr到10 T〇rr。在另一 ALD實施 . 例t PwaP範圍大約為lOOmTorr到2ΤΟΓΓ之間。反應空間中晶圓 面積壓力+Pwap需要大於腔室壓力(Pchamber)以控制PwaP。腔室壓力 • (PcLamber)需要至少比用以控制該腔室壓力的真空幫浦的壓力稍微 更高。 ' 口圖ΠΑ顯示處理基板表面的處理流程11〇〇的實施例。處理流 程可以用以處理任何種類的基板表面，而不限制於屏障/背襯層沈 1 19 200832612 積前處理或後處理。在步驟刪，將處糊近接頭表面處理用近 ，頭放，到基板之上。將近細放置於需要進行表面處理的基板 士，區域。區域所指的是圖9A及圖9B中的活性處理區域67〇， 备處理氣體被分送職絲面均活性處理_67()在反應空間 1^在?驟聰’將用以處理基板表面的處理氣體分送到基板 表，上之雜行激發以活化處理氣體。如同上述，處理氣體可於 熱激發。處理氣體也可藉由紫外線或藉由雷 發後，處理氣體在步驟11〇5被分送麟㈣^被1 ，削7詢問是否已到達末端表面處“二在 ^理地即點完程。如果答案為「否」，接著在步驟^〇9辨 ^处里地”、、占。衣私接者回到製程步驟11〇1。 -眚ϋΐΐ接面處理製程可用於廣泛範圍的製程情況。在 、以J中，衣私溫度範圍在大約室溫至大約4〇〇它之束 f接頭與ALD崎接輕合於同—製 a ^ 至大約350X：之fl卢1在貝^例中，溫度範圍為250〇C 大=二Γί二實施例中，製程壓力為大約10到 幫浦進行。 氣體的抽空可藉由能達到1()·6^的渦輪 圖11B顯示處理流程112〇之一 室::進行祕理基板= 基= 層及月觀層、接著後處理 1 的:序放置數個近接頭。在步驟η5接 =5區域移rA= 上的區域沈積屏障j f面_之上並且在基板表面 面區域之上;i工;=:f動顧近接·基板表 在基板表面上的區域沈積背襯層。在步驟⑽， 20 200832612 則近接頭至基絲面區域之上並且在基板表面上的區 =:ίί:ΐΓ驟1131，詢問末端沈積及表面處理是否 果夂查良「果5案為疋」，即完成在該腔室沈積及表面處理。如 =U匕’接著在步驟1133辨認處理/沈積循環用的區域。 循環。衣壬循^回到步驟1123以進行前處理/ALD1/ALD2/後處理 用折Z = f不處理流程115G之實施例，在具有多個處理及沈積 理室中進行前處理基板表面、在基板表面上： 10Β所-_ 層及另一個背槪層，接著後處理基板表面，如圖 近接‘驟115卜放置基板於具有數個表面處理及沈積用 ίϋίΐί Γ以前處理用近接頭、ALD1近接頭、ALD2近接 1153，理用近接頭的順序放置數個近接頭。在步驟 上的巴ίΪ，ΪΪ用ί接頭到基板表面區域之上並且在基板表面 W處理。在步驟1155，移動ALD1近接頭到基 ΐΐί，二ϋΐ且在基板表面上的區域沈積屏障層。在步驟 的區域沈财_近_聰_區域之上並且在基板表面上 板表祕糊基絲® _之上並且在基 =基板表面區域之上並且在基板ί面上的區 ΐί 即完成在該腔室中的沈積及表面處理。如ΐ又案ί η二ί ίί步驟1165辨認處理/沈積循環用的區域。之i:夢 ，面前，及屏障層沈積於同一腔室進行^^;間 3在=屏P早層之前保護前處^^表面 J】 ::在同—腔室中進行表面後處理及背襯層沈積Siiii 此外，並非需要用到在製程處理室的每個近接頭以進行處 21 200832612 ^。舉例來說’如果某些麵的基板不需要進行前處理 與AiD1近接頭、彻2近接頭及後處理用近接頭 私動^過基板，但未自前處理用近接頭分送處理氣體。 、 叫浙當基成在整合表面處理及沈積系統的處理，例如圖9A及 斤不’基板已預備好進行銅種晶層的無電沈積(ELD， 性的顯ff理流程12GG之實施例，說明沈積屏障層、選擇 及H、、、電銅種晶層及銅填隙相填滿配線結構。屏障層 積^層2有處理表面處理能力的整合腔室中被沈 i程产^- “ 土板被移入到具有整合表面處理及ALD沈積的 if亍所述，整合表面處理及ALD沈積腔室使用用以 .頭整^在=處理室$沈躺近翻’因為近制可贿多個處理 室中’在具有整合的表面處理及ald沈積的製程處理 有:ίΐίϊΐ^χ在薄膜沈積之前及，或在薄膜沈積之後沈積具 面^薄^及選擇性的背襯層。在—實施例中，基板表 層师的=月’』例如圖1Α所顯示），進行前處理以準備作屏障 面二以移除表面污染物或以處理 ϊίϊ ===表面ma)，可被氧化以形成金屬氧化物。移 ^ cit製程、使用含氣氣趙(例如 電表®老 或者組合。另外，開口m、116的介 對於一Γβ戶产t处理以增加沈積點而改善薄膜品質，如上所述。 釕)、。對;戸ΐΐ氣化组)在銅沈積之前可能需要背襯層(例如 了）對於其他屏障層(例如旬，可能不需要背概層。在一實施例 22 200832612 了 = 屏障層厚度大約為2从到2祕之間。 月概f献，而，_厚度大約為20A到200A之間。 ，沈積屏障層及選擇性的倾層之後，基板 準備進行基板表面銅種晶層沈積。 層為氮ii 。在，中，屏障 提供進行後續銅種沈積步驟“面 h含金屬表面以 1207U^5a’H反移入銅種晶層沈積處理室中。在步驟Figure 9C shows a proximal joint 655 on which a CVD (or plasma enhanced cVD) film can be deposited with reactants a and b. Such a CVD proximal joint can also be integrated with a proximal joint for pretreatment, a proximal joint for ALD, or a proximal joint for post-treatment, and there are many types of joints. For example, post processing may not be required after ALD. Therefore, only uranium treatment, ALD1 proximity, and/or ALD2 are required. Or as shown in Figure 9D: It can be pre-processing, ALD1, CVD, and post-processing. Port FIG. 10A shows a cross-sectional view of the wiring structure 7A on the substrate 71A. The wiring structure 700 has an opening 705 with the barrier layer 720 and the optional backing layer 73. The screen P early layer 7 and the backing layer 730 are used as an example. In addition, there may be a single barrier layer 72 of copper wiring. Both the barrier layer 72〇 and the backing layer 73〇 are deposited as ald because both the barrier layer 720 and the backing layer 730 are deposited in an ALD process, so that the film thickness of the layer 720 and the backing layer 730 along the % features are equivalent. Consistently. ^ The thickness of a layer is between about 10A and about 5GA. The barrier layer and the f-liner are full-tone; the thickness (Tbl) is between about 20 A and about 1 〇〇. For example, barrier layer 720 is a tantalum nitride barrier layer of approximately 20 people. Backing layer 730 is a backing liner of about 2 A. The TBL is about 40A and its sheet resistance is about ΗΚΜ000 Ω, which is too high for copper plating. The layer resistance required for copper plating is approximately between 1 Ω and approximately 10 Ω. By adding a large (8) 钌' barrier/backing layer to the backing layer, the overall sheet resistance is about 1 〇 to 15 Ώ, which is low enough for copper plating without an electroless copper seed layer. Please note that the initial step of direct copper plating on the backing layer (or barrier plating refers to the plating of the copper seed layer. Therefore, the second layer is to be deposited on the special part to increase the total barrier on the substrate surface / The thickness of the north is reduced by approximately (1) to 1 〇 2008 18 200832612 through the sheet resistance to copper plating. In the embodiment, the total thickness Tbl is approximately between 2 〇〇 A. The barrier layer or backing layer is deposited in a number of ways to increase the thickness. These methods include, but are not limited to, CVD and physical vapor deposition. ° As described in Figure 9C, the proximal joint can also be used for depositional chemical vapor deposition. (CV_film. 耩 is used in a similar manner to the proximity (10) deposition head. • CVD fineness allows CVD to be close to fine-grained surface and thin film deposition _ Guards. CVD process using near joints Can be used in a wide range of process conditions. In the embodiment towel, the process temperature wire circumference is about: thief to 4 。. In another embodiment +, the temperature range is about 300 ° C to about 350 ° C Between • In a real column, process pressure From about 1 Torr to about 10 Torr, the evacuation of the process gas can be performed by a turbo pump that can reach 10 Torr. In one embodiment, the spacing between the surface of the substrate and the surface of the proximal surface facing the substrate is approximately 10 mm. In another embodiment, the interval is between about 3 mm and 7 coffee. Such a CVD proximal joint can also be used in the case of a single-chamber towel with a proximal joint, MJ), with a proximal joint, or after The treatment is integrated with a proximal joint for substrate surface treatment and film deposition. There can be many combinations. Using the example shown in FIG. 1B, as shown in FIG. 10B, the process chamber may include: a pre-processed proximal joint, an ALD1 proximal joint 76〇 for depositing a barrier layer, for sinking on the barrier layer. The ruthenium joint of the aged lining is 77 〇, the CVD proximal joint 78 沉积 which deposits another backing layer, and the post-processing proximal joint 79 用以 for post-treatment. Main, such as reaction space = with wafer area pressure (Pwap). For surface treatment (eg, pre > month clean), the range of Pwap is approximately 100 mT〇rr to 10 T〇rr. In another ALD implementation, the example p PwaP range is between about 100 mTorr and 2 Torr. The wafer area pressure +Pwap in the reaction space needs to be greater than the chamber pressure (Pchamber) to control PwaP. Chamber pressure • (PcLamber) needs to be at least slightly higher than the pressure of the vacuum pump used to control the chamber pressure. The 'port diagram ΠΑ shows an embodiment of the processing flow 11处理 for processing the surface of the substrate. The processing flow can be used to treat any kind of substrate surface without being limited to the barrier/backing layer deposition 1 19 200832612 pre-product processing or post-processing. In the step of deleting, the surface of the paste near the joint is treated with a near head and placed on the substrate. Place it in close proximity to the substrate, area where surface treatment is required. The area refers to the active treatment area 67〇 in FIG. 9A and FIG. 9B, and the preparation gas is distributed to the surface of the active surface to be treated _67() in the reaction space. The process gas is distributed to the substrate table, and the miscellaneous excitation is performed to activate the process gas. As described above, the process gas can be thermally excited. The treatment gas can also be distributed by ultraviolet rays or by lightning, and the treatment gas is sent to the lining (four) ^ by 1 in step 11 , 5, and the 7 is asked whether the end surface has been reached. If the answer is "No", then in step ^〇9, the location is "," and the private receiver returns to the process step 11〇1. The 眚ϋΐΐ joint processing can be used for a wide range of process conditions. In J, the temperature range of the clothing is in the range of about room temperature to about 4 〇〇, and the bundle of the f-joint is in the same manner as the ALD-synthesis - a ^ to about 350X: in the case of The temperature range is 250 〇C. Large = Γ. In the second embodiment, the process pressure is about 10 to the pump. The evacuation of the gas can be performed by the turbine shown in Figure 11B which can reach 1 ()·6^. Room:: Perform the secret substrate = base = layer and moon view layer, followed by post-treatment 1 : Place several joints in sequence. In step η5, connect the area on the rA= area deposition barrier jf surface _ and Above the surface area of the substrate; i: f: the near-substrate table deposits the backing layer on the surface of the substrate. In step (10), 20 200832612 The area near the base to the base surface area and on the surface of the substrate =: ίί: Step 1131, ask whether the end deposition and surface treatment are good, and the result is "Yi 5 case is 疋", that is, completed in the cavity Chamber deposition and surface treatment. For example, =U匕' then identifies the area for the processing/deposition cycle at step 1133. cycle. The garment is returned to step 1123 for pre-treatment/ALD1/ALD2/post-treatment. The embodiment of the process is performed in a plurality of processing and deposition chambers. On the surface: 10 - - 层 layer and another back 槪 layer, and then after processing the surface of the substrate, as shown in the vicinity of the 'flip 115' placed substrate with several surface treatment and deposition with ϋ ΐ Γ Γ Γ 、 、 、 、 、 ALD2 is close to 1153, and several proximal joints are placed in the order of the proximal joint. In the step, the ί is connected to the surface area of the substrate and processed on the surface W of the substrate. At step 1155, the ALD1 proximal joint is moved to the base, and a barrier layer is deposited on the surface of the substrate. In the area of the step, the area of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Deposition and surface treatment in the chamber. For example, step 165 identifies the area used for the processing/deposition cycle. i: dream, front, and barrier layer deposited in the same chamber for ^^; 3 in front of the screen before the protection layer ^ ^ surface J] :: surface post-treatment and back in the same chamber Liner Deposition Siiii In addition, it is not necessary to use each of the near joints in the process chamber to perform at 21 200832612 ^. For example, if the substrate on some sides does not need to be pre-processed, the AiD1 proximity connector, the 2nd proximity connector, and the post-processing proximity connector are used to move the substrate, but the processing gas is not distributed from the front connector. It is called Zhe Dangjicheng in the process of integrating surface treatment and deposition system. For example, Figure 9A and Jin's substrate have been prepared for electroless deposition of copper seed layer (ELD, embodiment of the process of 12GG, indicating deposition The barrier layer, the selection and the H,, the electro-copper seed layer and the copper interstitial phase fill the wiring structure. The barrier layer 2 has an integrated processing chamber for processing the surface treatment capability. It is moved into the if亍 with integrated surface treatment and ALD deposition, integrated surface treatment and ALD deposition chamber are used to make the head in the processing room, and the multiple treatment rooms can be bribed. The process in the process of having integrated surface treatment and ald deposition is: 沉积 χ χ χ χ 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜The substrate surface layer's = month'', as shown in FIG. 1A), is pretreated to prepare the barrier surface 2 to remove surface contaminants or to treat ϊίϊ === surface ma), which may be oxidized to form a metal oxide. Move ^ cit process, use gas containing gas Zhao (such as electricity ® Old or combined. In addition, the openings m, 116 are treated for a Γ 户 户 t to increase the deposition point to improve film quality, as described above. 钌), 对; 戸ΐΐ gasification group) may be before copper deposition A backing layer (for example) is required for other barrier layers (for example, a back layer may not be required. In an embodiment 22 200832612 = barrier layer thickness is between about 2 and 2 secrets. The thickness of _ is between about 20A and 200A. After depositing the barrier layer and selectively pour the layer, the substrate is ready for copper seed layer deposition on the substrate surface. The layer is nitrogen ii. In, the barrier provides for subsequent copper deposition. Step "The surface h containing metal surface is reversely transferred into the copper seed layer deposition processing chamber at 1207U^5a'H. In the step

到200A= 一實施例中’銅種晶層厚度大約為25A 100A之門—貫施例中’銅種晶層的厚度大約為50入到 狀銅充一ϋ列中，藉由無電製程沈積銅種晶層。厚的塊 ，钔充真d可糟“ f沈積(ELD)製程或電化學電鑛(咖 製程沈積。在步驟12G9，移動基板至銅電 齡ELD沈__層，可叫略這個步 在同—處理室中填隙層沈積可以做為種晶 層在步驟1211，沈積銅間隔填滿層。 具有的濕製程。* 了讓濕製程整合到 it ^具有全乾燥卿姻以韻懷程能力乂此外’系統需 ‘==填„保基板最少曝露於氧氣。最近已發展全乾 銅衣程。另外，全部製程中使用的液體為除氣的，也就是 可糟由市售的除氣系統移除溶氧。 >，電沈積製程可以數個方法(例如授煉電鍍㈣dle_plati叩))進 =’八中分送液制基板上*使赠態方式反應，在此之後移除 、或進行回收。在另—實施例巾，製程使用近接處理頭以 限制热電製程只細限繼域上的基板表面。未接近處理頭 之下的基板表面是乾的。 在步驟1207及1211的銅沈積之後，可以選擇性地將基板移 入基板清雜理室以在步驟1加進行選擇性的基板清潔。可藉由 23 200832612 ，用具化學溶液的刷洗清潔達成後銅沈積清潔 有美國賓州Allent_空氣產品及化學公司市 ^^ ^ 使用其他的基板表面清潔程序。 。的CP72B。也可 把本^2B為實施例示意圖顯示可以使屏障表面在f備之德，其 ?表面隶少的曝露於氧或其他污染物的整合備m 為此係整合系統，從一製程站會馬上傳送基板到下—制。’ 如上所述，屏障/背襯層沈積、屏障及背襯層 i的無電沈積、銅填隙層沈積，以及選擇性的後銅卩、^二曰 數？製程與濕触 ί i tf 作，而乾賴製程則是在少於1 T-r下運作。 兮ft糸統需要可以處理混合之乾製程與濕製程。 η ^曰糸、统1250具有2個基板傳送模组1255及1257。傳送 杈、、且55及1257裝置有自動控制裝置以從一掣程巴蒋動美勑 Γτ t 1255運條餘狀態，壓力小於大約 1255連結湖崎碰合絲處職Aj d處ΐϋ也運作於真空狀g，也就是壓力小於1 基板1251帶人該“=== 至日日圓匣盖1252。在真空傳送模組1255及 一真空預備室⑽以在大氣晶_盒12直^ =有 助舰絲，__魏㈣55 j力與所連接的處理室(例如處理模組1256)相等。舉例而言， 直1252傳送基板1251到真空傳送模組1255， 5 it 3 f力首先被帶到與大氣壓力相同以使基板 攸氣曰曰圓匣盒1252傳送到真空預備室1253。在基板1251 24 200832612 位於真空預備室1253之内並且關閉真空預備室門後，直介 I253抽真空到真空狀態以使基板12si被從真空預備 、捕， 到真空傳送模組1255。 傅运 如上所述，在處理流程1200中，基板1251被帶到該敕人 統1250以沈積屏障/背襯層與銅種晶層，以及銅填隙層。如#Z 程1200的步驟1201所述，移動基板1251到具有整合表面f理^ ALD屏障/背襯沈積用的處理室的處理模組1256。表面處理^ald 屏障/背襯沈積藉由近接頭(例如圖9A所示)進行。圖9a所述的表 面處理製程、ALD屏障沈積以及ALD背襯沈積皆為乾製 皆在1 Torr以下運作。、'To 200A = in one embodiment, 'the thickness of the copper seed layer is about 25A 100A - in the example, the thickness of the copper seed layer is about 50 into the copper filling column, and the copper is deposited by the electroless process. Seed layer. Thick blocks, 钔 真 d “ f f f f deposition (ELD) process or electrochemical electro-mineral (coffee process deposition. In step 12G9, moving the substrate to the copper age ELD sink __ layer, can be called this step in the same - The interstitial layer deposition in the processing chamber can be used as a seed layer. In step 1211, a copper spacer is filled to fill the layer. The wet process is provided. * The wet process is integrated into it ^ has a full dryness and a good ability. In addition, the 'system needs' == fill in the substrate to be exposed to oxygen at least. Recently, the whole dry copper process has been developed. In addition, the liquid used in all processes is degassed, that is, it can be removed by a commercially available degassing system. In addition to dissolved oxygen. >, the electrodeposition process can be carried out in several ways (for example, refining electroplating (four) dle_plati叩)) into the 'eight-in-one liquid-feeding substrate* to allow the reaction mode to be reacted, after which it is removed or recycled. . In another embodiment, the process uses a proximity processing head to limit the thermoelectric process to only fine-tune the surface of the substrate on the relay. The surface of the substrate that is not near the processing head is dry. After the copper deposition of steps 1207 and 1211, the substrate can be selectively transferred into the substrate clearing chamber for selective substrate cleaning in step 1. The cleaning of the copper deposit can be achieved by brush cleaning of the chemical solution of 23 200832612. There is a cleaning process for other substrates in the United States. Allen_Air Products and Chemical Company of the United States ^^ ^. . CP72B. The schematic diagram of the embodiment can also be used to show that the surface of the barrier can be made in a proper manner, and the surface is exposed to a small amount of exposed oxygen or other contaminants, so that the system is integrated from a process station. Transfer the substrate to the bottom. As mentioned above, barrier/backing layer deposition, electroless deposition of barrier and backing layer i, deposition of copper interstitial layers, and selective post-bending, 曰? The process is done with wet touch ί i tf, while the dry process is operated at less than 1 T-r. The 兮 糸 system needs to be able to handle the mixed dry and wet processes. The η ^ 曰糸 system 1250 has two substrate transfer modules 1255 and 1257. The transmission 杈, and 55 and 1257 devices have automatic control devices to transport the remaining state from a 巴 巴 蒋 蒋 , , , t t t t t t t , , , , , , , , , t 小于 小于 小于 ΐϋ ΐϋ ΐϋ ΐϋ ΐϋ ΐϋ ΐϋ ΐϋ ΐϋ ΐϋ Vacuum g, that is, pressure less than 1 substrate 1251 with the person "=== to the Japanese yen cover 1252. In the vacuum transfer module 1255 and a vacuum preparation room (10) to the atmosphere crystal_box 12 straight ^ = help ship Wire, __Wei (4) 55 j force is equal to the connected processing chamber (for example, processing module 1256). For example, straight 1252 transfer substrate 1251 to vacuum transfer module 1255, 5 it 3 f force is first brought to atmospheric pressure The force is the same to transfer the substrate helium gas cassette 1252 to the vacuum preparation chamber 1253. After the substrate 1251 24 200832612 is located inside the vacuum preparation chamber 1253 and the vacuum preparation chamber door is closed, the direct dielectric I253 is evacuated to a vacuum state to make the substrate The 12si is prepared from the vacuum, trapped, to the vacuum transfer module 1255. As described above, in process flow 1200, the substrate 1251 is brought to the deaf system 1250 to deposit a barrier/backing layer and a copper seed layer. And a copper interstitial layer, such as step 1201 of #Z程1200 The substrate 1251 is moved to a processing module 1256 having a processing chamber for integrating the surface ALD barrier/backing deposition. The surface treatment ^ald barrier/backing deposition is performed by a proximal joint (such as shown in Figure 9A). The surface treatment process, ALD barrier deposition, and ALD backing deposition described in Figure 9a are all dry and operate below 1 Torr.

基板1251在步驟1202中於製程處理室1256中進行處理後， 基板準備好進行ELD銅種晶層沈積。無電銅沈積及電化學電鍍 (ECP)為熟知的濕製程。如同上述討論，為了將濕製程整合於如上 所述之具有受控制之處理及輸送環境的系統中，反應器需要整合 沖洗器/烘乾器以具有全乾燥製程能力。此外，系統必需以惰性1 體填滿以確保基板最少曝露於氧氣。最近已發展全乾燥無電銅製 程。另外’在製程中使用的全部液體為除氣的，也就是說藉由市 面上已有的除氣系統移除溶氧。 ELD銅及ECP銅處理模組兩者皆需與具有受控制之環境的傳 送模組整合;因此，基板輸送模組1257於受控制之環境中運作以限 制基板曝露於氧氣或接觸到污染物。在一實施例中，基板輸送模 組1257以惰性氣體填滿並且在大氣壓力下運作。如步驟1205及 1207所述從處理室1256移動基板1251到ELD銅處理模組1258 以進行銅種晶層沈積。之後，如步驟709及711所述，基板1251 被移動到ECP銅模組1259以進行銅間隔··填滿沈積。在ECP間隔 -填滿之後’如步驟1213所述，可以移動基板1251進入清潔模組 1261並且進行基板清潔。然而，ECP銅沈積之後的清潔為選擇性 的。ECP處理模組具有一整合性的足以清潔基板的清洗器/烘乾器。 在此本發明以數個實施例敘述，熟悉本項技藝者將可從閱讀 25 200832612 式得知其中各樣的改變、增加、排列及等效。因此， 本务月應包括在本發明精神及範圍之内所做的改變、详 【圖式簡單說明】 的剖示依據本發明之一實施例在屏障層沈積前配線結構 後的===發明之—實施例在屏障層沈積及銅沈積之 圖2顯示ALD沈積循環之範例。 的剖Γ圖3顯示在勘沈制始之時具有關生長點的ALD薄膜 圖。圖4A顯雜據本發明之—實闕之近麵ald腔室之示意 圖。圖4B顯示依據本發明之一實施例之ALD用近接頭之示意 理用關具魏朗秘頭表面處 近接依縣㈣之—實關處理崎麵表面處理用 用或rL6DA«®rm=r實補，在級技行表面處理 理用==之發二'-實施例’在基板上進行表面處. 理用==¾「實施例’在基板上進行表面處 接頭雜縣购之—實酬，絲纽㈣⑽用近 26 200832612 近接:二5=依據本發明的另-實施例’表面處理用或ALD用 用或鋒在基板之下進行表面處理 用近據本剌之—實侧之處糊近接齡面處理 用近㈣P實酬4理崎細絲面處理 理用本發0狀—實補，—處_近接頭表面處 結之示意圖/。、在基板及接地的基板支座之上的射頻（RF)電源連 去应f-35示依據本發明之—實施例’一在基板及接地的基板 結之示意圖近接頭表面處理用近接頭與射頻⑽）電源連 之示g顯示依據本發明之—實施例—藉由近接頭ALD沈積薄膜 細=/=_明之—實施例，祕板上讀個表面處 處理料例’在基板议數個表面 頭。㈣顯示依據本發明的另—實施例，在基板上的CVD近接 圖9D顯示依據本發明的 處理及沈積用近接頭。 另—一例’在基板上的數個表面 圖10A顯示依據本發明 ^ ^After the substrate 1251 is processed in the process chamber 1256 in step 1202, the substrate is ready for ELD copper seed layer deposition. Electroless copper deposition and electrochemical plating (ECP) are well known wet processes. As discussed above, in order to integrate the wet process into a system having a controlled processing and delivery environment as described above, the reactor requires an integrated irrigator/dryer to have a full drying process capability. In addition, the system must be filled with an inert 1 body to ensure that the substrate is exposed to minimal oxygen. A fully dry, electroless copper process has recently been developed. In addition, all of the liquid used in the process is degassed, that is, dissolved oxygen is removed by a commercially available degassing system. Both the ELD copper and ECP copper processing modules need to be integrated with the transfer module in a controlled environment; therefore, the substrate transport module 1257 operates in a controlled environment to limit exposure of the substrate to oxygen or exposure to contaminants. In one embodiment, the substrate transport module 1257 is filled with an inert gas and operates at atmospheric pressure. The substrate 1251 is moved from the processing chamber 1256 to the ELD copper processing module 1258 as described in steps 1205 and 1207 for copper seed layer deposition. Thereafter, as described in steps 709 and 711, the substrate 1251 is moved to the ECP copper module 1259 for copper spacer filling. After the ECP interval - filling - as described in step 1213, the substrate 1251 can be moved into the cleaning module 1261 and the substrate cleaned. However, cleaning after ECP copper deposition is selective. The ECP processing module has an integrated washer/dryer sufficient to clean the substrate. The present invention has been described in terms of several embodiments, and various modifications, additions, permutations, and equivalents thereof will be apparent to those skilled in the art. Therefore, the present month should include the changes made in the spirit and scope of the present invention, and the detailed description of the drawings will be based on an embodiment of the present invention after the wiring structure of the barrier layer is deposited. - Example of Barrier Layer Deposition and Copper Deposition Figure 2 shows an example of an ALD deposition cycle. Figure 3 shows an ALD film with a growth point at the beginning of the deposition process. Figure 4A is a schematic illustration of a near ald chamber in accordance with the present invention. 4B shows the schematic use of the proximal joint of the ALD according to an embodiment of the present invention. The surface of the Weilang secret head is closely connected to the county (four) - the practical treatment of the surface treatment or rL6DA «® rm = r Complement, in the surface of the technical line of the treatment == the second two - the 'example' on the surface of the substrate. Rational == 3⁄4 "Examples" on the substrate at the surface of the joints of the county to buy - the real ,Silk (4) (10) used nearly 26 200832612 Proximity: 2 5 = According to another embodiment of the present invention 'surface treatment or ALD use or front surface treatment under the substrate with the near side - the real side paste Near the age of the surface treatment with the near (four) P real remuneration 4 Lizaki fine silk surface treatment with this hair 0 shape - real compensation, - at the near joint surface diagram / /, on the substrate and grounded substrate support The radio frequency (RF) power supply is connected to the f-35 according to the present invention - an embodiment of the substrate and the grounded substrate junction schematic near the joint surface treatment with the near connector and the radio frequency (10) power supply g display according to the present invention - Embodiment - Thin film deposited by near joint ALD = / = _ Ming - examples, secret board The surface treatment sample 'receives a number of surface heads on the substrate. (4) shows another embodiment according to the present invention, the CVD close-up on the substrate 9D shows the processing and deposition proximal joint according to the present invention. Several surfaces on the substrate are shown in Figure 10A in accordance with the present invention ^ ^

背襯層、及CVD層沈積配線特例轉由⑽屏障層、ALD 圖ΙΟΒ顯示依據本發明的 — 理及沈積用近接頭。 的另一貫施例’在基板上數個表面虑 圖11Α顯示依據本發明之—實施例使用近接頭以進行表面肩 27 200832612 理的處理流程。 個、斤ϋΓ顯Γ依據本發明之—實施例，在製程處理室中使用數 個近接頭細表面纽及_的處理棘。 中使用數 頁示f據本發明的另一實施例，在製程處理室中#用 數m進行表面處理及沈積的處理流程。u至中使用 配線咖的整合系麵行鋼 沈積本發明之—實施例之進行銅配線之表面處理及祺The backing layer and the CVD layer deposition wiring are exemplified by (10) barrier layer, ALD diagram, and the near joint for deposition and deposition according to the present invention. Another embodiment of the present invention is shown in Figure 11 which shows a process flow for the surface shoulder 27 200832612 using a proximal joint in accordance with the present invention. In accordance with an embodiment of the present invention, a plurality of proximal joints and thorns are used in the process chamber. In accordance with another embodiment of the present invention, a process flow for surface treatment and deposition is performed by a number m in a process chamber. u to use integrated wiring of wiring coffee. Depositing the surface treatment of copper wiring according to the present invention -

_主要元件符號說明： 50〜基板 100〜介電層 101〜金屬化線 102〜屏障層 104〜經介電層 106〜溝槽介電層 114〜介層洞 116〜溝槽 120〜屏障層 122〜銅材料 122a〜表面 130〜屏障層 131〜選擇性的背襯層 132〜銅薄膜 133〜銅種晶層 2〇1〜含有屏障-金屬之反應物(M) 202〜清除氣體(P) 203〜反應物(B) 28 200832612 204〜清除氣體脈衝 301〜島狀部 303〜空洞 400〜ALD反應器 410〜基板 411〜氣體通道 • 413、415〜真空通道 420〜基板支座 430〜近接頭 440〜進氣口 • 441〜儲存第一反應物之容器 443〜第二反應物的容器 443’〜反應器 445〜儲存清除氣體之容器 450〜反應空間 451、453 及 455〜閥 460〜真空幫浦 465〜真空管線 473〜射頻產生器 ⑩ 500〜處理室 501〜氣體注射頭 503、505〜真空頭 503’〜單一開縫 510〜基板 ‘ 511〜氣體通道 - 513、515〜真空通道 520〜基板支座 521〜氣體注射孔 530〜近接頭 29 200832612 530’〜近接頭 530”〜近接頭 530’”〜近接頭 530*〜近接頭 530**〜近接頭 540〜進氣口 540’〜進氣口 541〜容器 541’〜反應器 550〜反應空間 555〜活性表面 560〜幫浦 561〜熱燈絲 563〜燈源 565〜真空管線 565’〜真空管線 566〜激發室 568〜激發室 570〜射頻電源 573〜射頻產生器 610〜基板 620〜前處理用近接頭 630〜ALD1近接頭 635〜處理間近接頭 640〜ALD2近接頭 650〜後處理用近接頭 655〜近接頭 660〜反應空間 670〜活性處理區域 200832612 700〜配線結構 705〜開口 710〜基板 720〜屏障層 730〜背襯層 740〜層 750〜前處理用近接頭 760〜ALD1近接頭 770〜ALD2近接頭 780〜CVD近接頭 790〜後處理用近接頭 810〜基板 820〜薄膜 821〜切面 822〜切面 823〜切面 824〜切面 1100〜流程 1101〜步驟 1103〜步驟 1105〜步驟 1107〜步驟 1109〜步驟 1120〜處理流程 1121〜步驟 1123〜步驟 1125〜步驟 1127〜步驟 1129〜步驟 200832612 1131〜步驟 1133〜步驟 1150〜流程 1151〜步驟 1153〜步驟 1155〜步驟 1157〜步驟 1159〜步驟. 1161〜步驟 1163〜步驟 1165〜步驟 1200〜處理流程 1201〜步驟 1203〜步驟 1205〜步驟 1207〜步驟 1209〜步驟 1211〜步驟 1213〜步驟 1250〜整合系統 1252〜晶圓匣盒 1253、1254〜真空預備室 1255〜真空傳送模組_ Main component symbol description: 50 to substrate 100 to dielectric layer 101 to metallization line 102 to barrier layer 104 to dielectric layer 106 to trench dielectric layer 114 to via hole 116 to trench 120 to barrier layer 122 ~ copper material 122a~ surface 130~ barrier layer 131~ selective backing layer 132~ copper film 133~ copper seed layer 2〇1~ containing barrier-metal reactant (M) 202~ purge gas (P) 203 ~Reactant (B) 28 200832612 204~Clear gas pulse 301~island 303~cavity 400~ALD reactor 410~substrate 411~gas channel•413,415~vacuum channel 420~substrate holder 430~near joint 440 ~ Inlet port 441~ Container 443 for storing the first reactant 4.4~ Container 443' for the second reactant~ Reactor 445~ Container for storing the purge gas 450~ Reaction space 451, 453 and 455~ Valve 460~ Vacuum pump 465~vacuum line 473~RF generator 10500~processing chamber 501~gas injection head 503,505~vacuum head 503'~single slit 510~substrate '511~ gas channel-513,515~vacuum channel 520~substrate branch Seat 521~ gas injection hole 530~ close 29 200832612 530'~near joint 530"~near joint 530'"~near joint 530*~near joint 530**~near joint 540~air inlet 540'~air inlet 541~container 541'~reactor 550~ Reaction space 555 ~ active surface 560 ~ pump 561 ~ hot filament 563 ~ light source 565 ~ vacuum line 565' ~ vacuum line 566 ~ excitation chamber 568 ~ excitation chamber 570 ~ RF power supply 573 ~ RF generator 610 ~ substrate 620 ~ before Processing proximal joint 630 to ALD1 proximal joint 635 to treatment intermediate joint 640 to ALD2 proximal joint 650 to post-treatment proximal joint 655 to proximal joint 660 to reaction space 670 to active treatment region 200832612 700 to wiring structure 705 to opening 710 to substrate 720~barrier layer 730~backing layer 740~layer 750~pre-processing proximal joint 760~ALD1 proximal joint 770~ALD2 proximal joint 780~CVD proximal joint 790~post processing proximal joint 810~substrate 820~film 821~section 822~Section 823~Section 824~Slice 1100~ Flow 1101~Step 1103~Step 1105~Step 1107~Step 1109~Step 1120~Processing Flow 1121~Step 1123~Step 1125~Step 1127~Step 1129~Step 200832612 1131~Step 1133~Step 1150~ Flow 1151~Step 1153~Step 1155~Step 1157~Step 1159~Step. 1161~Step 1163~Step 1165~Step 1200~Process Flow 1201~Step 1203~ Step 1205 to step 1207 to step 1209 to step 1211 to step 1213 to step 1250 to integration system 1252 to wafer cassette 1253, 1254 to vacuum preparation chamber 1255 to vacuum transfer module

1256〜整合的表面處理及ALD 1257〜受控制環境的傳送模組 1258〜ELD銅處理模組 1259〜ECP銅模組 1261〜清潔模組 321256~ integrated surface treatment and ALD 1257~ controlled environment transmission module 1258~ELD copper processing module 1259~ECP copper module 1261~ cleaning module 32

Claims (1)

200832612 十、申請專利範圍： 1· 一種基板表面的處理裝置，包括： 一基板支座，用以支持該基板； 本而^接頭’用以分送H氣體以處_近接頭下方之一基板 處理區域，其中該近接頭覆蓋該基板表面的該活性 頭包括至少一真空通道，以從該近接頭與該 ί=: 間抽出過多處理氣體;該近接頭具有-激發 Liti處理氣體被分送到該基板表面的該活性處理區域部分 上之刖激化該處理氣體。 \ 1刀 送ί處i氣體。广乳體通道的每一側各設置一個真空通道以分 3真專第」，之^^表面的處理裝置，其中具有-個 /、 、、兀至^ 一氣體通道以分送該處理氣體。 3 NF3 NH4F、〇2、及叫所構成之群組。 項之基板表面的處理裝置，其中該處理氣 4、糾、料_v)錢_激發。 7·夕種基板表面的處理方法，包括. 遑用以分迗一處理氣體到該基板表面的 33 200832612 一區域上；該近接頭具有至少一直介 近接頭下方的-反應空間抽出衫的用以從該 頭表面處_近接賴蓋該基 =g ’且_理用近接 在分送該處理氣體到該基板表面的、， 的-激發室崎發該處理氣體·及 5上切’在該近接頭 表面祕該激發處理氣體到該基板表面的區域之上以處理該基板 Lr用之f板絲的處理方法，其巾該表面處 係用以在·板上沈積-相之前移除表面雜質。 9理I用申=利1圍第^之基板表面的處理方法，其中該表面處 里係用以祐加一銅之屏p早層之ALD的初始沈積點。 10.如申明專利範圍第7項之基板表面的處 理係在-銅種晶㈣沈猶狀前於沈躺 2強所欲沈積的-無電銅種晶層的成核翻，或移除該沈積背 襯滑上的污染物。 11. 二種用以進行表面處理及薄膜沈積之腔室，包括： ^基板表面處理用近接頭，用以分送第一處理氣體以處理在 該第厂基板表面處理用近接頭下方之一基板表面的一部分;以及 、第一 ALD (atomic layer deposition，原子層沈積)用近接頭，用 以依序分送第一反應氣體及第一清除氣體以在該第一 ALD用近接 頭之下方沈積第一 ALD薄膜。 12. 如申請專利範圍第η項之用以進行表面處理及薄膜沈積之腔 室，更包括： 弟一基板表面處理用近接頭，用以分送第二處理氣體以處理在 34 200832612 該I二ΛΐίΞί理用近接頭下方之該基板該表面的-部分;以及 収接頭，用以依序分送第二反減體及第二清除 亂體以在糾—ALD用近接歡下枝積第二Αΐχ>薄膜。 L3, 7中^^上3之用輯行表面處理及薄膜沈積之腔 至，，、中^基板絲處理用近_細以在以該第—al 膜沈積於基板之前或之後進行一表面處理。 !!.如/上專繼㈣i1奴帛輯練破理及_沈積之腔 至，其中邊弟一 ALD薄膜為一銅之屏障層。/ 15•如申請專利範圍第12項之用以進行 室，其中該第二ALD薄膜為—銅之。 16.如申請專繼圍第丨2項之㈣進行表面處理及_沈積之腔 室，其中該第二基板表面處理用近接·用以在_第二則薄 膜沈積於該基板之後進行一表面處理。 / 17·如申#專1 犯圍弟12項之用以進行表面處理及薄膜沈積之腔 理 ALD 室，其中將該第了 ALD用近接頭配置鄰接於該第一基板表面處 用近接頭，麟第jLD崎翻ALD配置雜於該第一 al^ 用近接頭，以及將該第二基板表面處理騎接頭 二ALD用近接頭。 州按7、忑弟 18.如申請專利範圍第17項之用以進行表面處理及軸 室，其中該第〆基板表面處理用近接頭係用以在上薄^ 積之前進行祕理’該f - ALD親接難肖财 層，該第二ALD用近接頭係用以沈積—銅之背概層，且 板表面處_近制細以屏障層及背襯層已沈積之後進行一 ^ 35 200832612 處理。 〜苴二圍藤弟々項之用以進行表面處理及薄膜沈積之腔 中反應乳體為—含屏障金屬之反應物，或與該含屏 I1 早孟屬之反應物形成一屏障層的一反應氣體。 兮如利範圍V2項之用以進行表面處理及薄膜沈積之腔 ^龎/、t if—反應氣體為—含背襯金屬之反應物或與該含背襯 孟屬之反應物形成一背襯層的一反應氣體。200832612 X. Patent application scope: 1. A processing device for a substrate surface, comprising: a substrate support for supporting the substrate; and a connector for distributing H gas to a substrate below the proximal connector a region, wherein the active head covering the surface of the substrate includes at least one vacuum passage to extract excess processing gas from the proximal joint and the λ=; the proximal joint has an -excited Lit process gas distributed to the The portion of the active treatment region on the surface of the substrate excites the process gas. \ 1 knife Send ί i gas. A vacuum channel is provided on each side of the wide emulsion channel to divide the surface of the processing device, wherein there is a gas channel of - /, , , 兀 to ^ to distribute the processing gas. 3 NF3 NH4F, 〇2, and the group formed by the call. The processing device of the substrate surface of the item, wherein the processing gas 4, the correction material, the material_v) money_excitation. The method for treating the surface of the substrate of the substrate, comprising: a region for separating a processing gas onto the surface of the substrate 33 200832612; the proximal connector having at least a reaction space exiting the shirt below the joint From the surface of the head _ close to the base = g 'and _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The method of treating the gas onto the surface of the substrate to treat the filaments of the substrate Lr, the surface of the substrate is used to remove surface impurities before depositing the phase on the substrate. 9 The treatment method of the surface of the substrate is applied to the surface of the substrate, wherein the surface is used for the initial deposition point of the ALD of the early layer of the copper screen. 10. The treatment of the surface of the substrate according to item 7 of the scope of the patent is in the nucleation of the electroless copper seed layer to be deposited before the copper seed crystal (4) is deposited, or the deposition is removed. Contaminants on the backing slide. 11. Two chambers for surface treatment and film deposition, comprising: a substrate surface treatment proximal joint for dispensing a first process gas for processing a substrate below the proximal surface of the first substrate surface treatment a portion of the surface; and a first ALD (atomic layer deposition) proximal joint for sequentially dispensing the first reactive gas and the first purge gas to deposit under the first ALD proximal joint An ALD film. 12. The chamber for surface treatment and film deposition according to item η of the patent application includes: a sub-joint for substrate surface treatment for dispensing a second process gas for processing at 34 200832612 Λΐ Ξ Ξ 理 理 Ξ 理 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方 下方film. L3, 7 in the upper surface of the surface treatment and film deposition cavity to,, the middle of the substrate wire treatment is used to perform a surface treatment before or after the deposition of the first -al film on the substrate . !!. such as / on the special (four) i1 slaves to practice the process and _ deposition of the cavity to, where the brother of an ALD film is a copper barrier layer. / 15• For use in the room of claim 12, wherein the second ALD film is - copper. 16. The application for the surface treatment and deposition of the second substrate (4), wherein the second substrate surface treatment is used for the surface treatment after the second film is deposited on the substrate. . / 17·如申#专1 has a 12-part cavity ALD chamber for surface treatment and film deposition, wherein the first ALD proximal joint is disposed adjacent to the first substrate surface with a proximal joint, The ninth jLD rugged ALD configuration is mixed with the first joint, and the second substrate is surface-treated to ride the joint two ALD proximal joints. According to the patent application, the surface treatment and the shaft chamber are used for the surface treatment and the shaft chamber. The second joint surface treatment for the second substrate is used for the secret treatment before the thin film is formed. - ALD is in contact with the hard layer, the second ALD is used for depositing - the back layer of copper, and the surface of the board is close to the thickness of the barrier layer and the backing layer has been deposited after a ^ 35 200832612 deal with. The reaction body in the cavity for surface treatment and film deposition is a reactant containing a barrier metal or a barrier layer formed with the reactant of the screen I1 Reaction gas. For example, the surface treatment and film deposition chambers for the surface treatment and film deposition, such as the reaction metal containing the backing metal or forming a backing with the reactant containing the backing a reaction gas of the layer. 21. —種表面處理及薄膜沈積方法 進行表面處理及薄膜沈積，包括: 用以在一處理室内的一基板上 將該基減置於具有複數個表面處理及細沈顧近接頭的 二处理至中，其中複數個近接頭的每一個覆蓋一基板表面的一部 分； 移動二前處理用近接頭到該基板表面的一區域之上； 以該珂處理用近接頭在該基板表面的該區域上進行表面前處21. A surface treatment and film deposition method for surface treatment and film deposition, comprising: substituting the substrate on a substrate in a processing chamber to a second surface treatment having a plurality of surface treatments and fine contact Wherein each of the plurality of proximal joints covers a portion of a surface of the substrate; moving the two front processing proximal joints to an area of the surface of the substrate; and the proximal joint for processing the tantalum is performed on the area of the surface of the substrate Front of the surface 移動一 ALD1 (原子層沈積1)近接頭到該基板表面上之區域上 方;以及 利用该ALD1近接頭在基板表面上之區域沈積一銅之屏障層。 22·如申請專利範圍第21項之表面處理及薄膜沈積方法，更包括： 移動一 ALD2(原子層沈積2)近接頭到該基板表面上的該區域 之上方； 以該ALD2近接頭在該基板表面上的該區域沈積一銅之背襯 層； 移動一後處理用近接頭到該基板表面的一區域之上方;以及 以該後處理用近接頭在該基板表面上的該區域進行表面後處 36 200832612 理。 23·如一申^專利範圍第21項之表面處理及薄膜沈積方法， 以ALD1近接頊沈積的該屏障層之初始沈積點。 薄膜沈積方法，其中該 以加強欲沈積之無電銅 24·如申請專利範圍第22項之表面處理及 表面後處理係進行於該銅之背襯層之上， 種晶層的成核作用。 25.如义申請專利範圍第21項之表面處理及薄膜沈積方法，其中該 表面厨處理及該屏障層沈積係在同—腔室巾進行，以減少^理時 二處理的該基板表面免於在沈積該屏障層之前 26.-種薄膜沈積方法，用以在—整合系統中將薄膜沈積 之一基板上，包括： 移動該基板進入具有複數個近接頭的一處理室中，選定的近接 頭用以進行表面處理及原子層沈積(ALD)中之至少其一，該處理室 鲁為該整合系統之-部分’並且在該處理室内，使用複數個:來進 打屏障層ALD的近綱之其-以在該基絲面進行屏障層沈積； 且 、 從該處理室移動該基板，經由該整合系統的一傳送模組進入一 • 銅種晶層沈積用之處理模組，該銅種晶層沈積用處理模、植為救人 系統之一部分，且在該銅種晶層沈積用之處理模組内，、於哕^ 表面進行銅種晶層沈積， 土 其中該整合系統實現在該整合系統内完成受控制環境下之 轉，以限制基板曝露於該整合系統外的未受控制環境下的狀況。 37 200832612 27’如申睛專利範圍第26項之薄膜沈積方法，更包括： 從孩銅種晶層沈積用之處理模組移動該基板八 驗，喊人—銅填縣沈細驗_^層 ’匕積用處軸組為該整合系統之一部分；而在該銅填隙声 处理^之内，於該基板的該銅種晶層上沈積銅填隙層i積;以及 的隙層沈積狀處理她移動該基板，經_整合系統 j理3為該整合系統之—部分；而在該基板清潔^ 於進行銅填隙層沈積之後，進行基板清潔。 、 28·如申請專利範圍第26項之薄膜沈積方法，更包括· 數個在近屏:，之 29·如申明專利範圍第μ j頁之薄膜， 進㈣除-物，或活化 30·=請專利範圍第28項之薄膜沈積方法，更包括： -在错該基用:二處:層室4^ 複一 L如該申膜沈積方法，其中該表面後處理 積的該基板的表面除污染物或活化預備進行銅種晶層沈 .32.如申請專利範圍第26項之薄膜沈積方法，其中在限制曝露於 38 200832612 該整合系統外未受控制環境之狀況下，沈積於該整合系統内的 銅配線之基板上的溥膜，改善銅配線之EM(Electromigration， 電遷移)特性。 33· —種沈積薄膜用之整合系統，用以將薄膜沈積於銅配線之一基 板上，包括： 一處理室’具有複數個近接頭，使用其中之選定的近接頭以進 ， 行表面處理及ALD; 一真空傳送模組，連結於該處理室，該真空傳送模組係用以在 該整合系統中傳送基板； 響 < 銅種晶層沈積用處理模組； 一受控制環境的傳送模組，連結於該銅種晶層沈積用處理 以及 、、二真空預備室，連結於該真空傳送模組以及受控制環境的該傳 送模組，该真空預備室係用以在該真空傳送模組及該受控制環境 的傳送模組之間輔助傳送該基板，其中該整合系統實現在該整合 系統内進行受控制環境的移轉，以限制基板曝露於該整合***外 的未受控制環境之狀況。 魯 34·如申請專利範圍第33項之沈積薄膜用之整合系統，更包括： 一銅填隙層沈積用處理模組，連結於該受控制環境的傳送模組; 及 '、’ 一基板清潔用處理模組，連結於該受控制環境的傳送模組。 ， · 士申明專利範圍苐33項之沈積薄膜用之整合系統，更包括· 一晶圓匣盒，用以在該整合系統中處理該基板之前或之後，容 納該基板;以及 一真空預備室，連結於該晶圓匣盒以及該真空傳送模組，該真 空預備室係用以在該晶圓匣盒及該真空傳送模組之間輔、助該基/板、 39 200832612 傳送。 36·如申請專利範圍第33項之沈積薄膜用之整合系統，其中該近 接頭之其一係用以沈積一銅配線之ALD屏障層。 37.如申凊專利範圍第33項之沈積薄膜用之整合系統，其中該近 接頭之其一係用以沈積一銅配線之ALD背襯層。 38·如申請專利範圍第33項之沈積薄膜用之整合系統，其中該近 接頭之其一係用以在ALD之前進行表面前處理，以及另一近接頭 係用以在ALD之後進行表面後處理。 申請專利範圍第33項之沈積薄膜用之整合系統，其中該等 選定的近^頭包括··一表面前處理用近接頭、一屏障層ALD用近 接頭、一背襯層ALD用近接頭，以及一表面後處理用近接頭。 4〇·ί ί請專利範圍第33項之沈積薄膜用之整合系統，其中該受控 制％境的傳迭模組及該鋼種晶層沈積用處理模組 ，係以一惰性氣 體充填以限制該基板曝露於氧氣。 十一、圖式·· 40Moving an ALD1 (Atomic Layer Deposition 1) near the junction to the area on the surface of the substrate; and depositing a barrier layer of copper on the surface of the substrate using the ALD1 proximal joint. 22. The surface treatment and film deposition method of claim 21, further comprising: moving an ALD2 (Atomic Layer Deposition 2) proximal joint to the region on the surface of the substrate; the ALD2 proximal joint on the substrate a region of the surface on which a copper backing layer is deposited; a post-processing proximal joint is applied over a region of the surface of the substrate; and the surface of the post-processing proximal joint is applied to the surface of the substrate 36 200832612 Theory. 23. The surface treatment and film deposition method of claim 21 of the patent application, the initial deposition point of the barrier layer deposited by ALD1. A thin film deposition method in which the electroless copper to be deposited is reinforced. 24. The surface treatment and surface post-treatment according to claim 22 of the patent application are carried out on the copper backing layer to nucleate the seed layer. 25. The surface treatment and film deposition method of claim 21, wherein the surface treatment and the barrier layer deposition are performed in the same chamber to reduce the surface of the substrate from being treated. Prior to depositing the barrier layer, a thin film deposition method for depositing a thin film on a substrate in an integrated system includes: moving the substrate into a processing chamber having a plurality of proximal joints, the selected proximal joint For at least one of surface treatment and atomic layer deposition (ALD), the processing chamber is a part of the integrated system and in the processing chamber, a plurality of: used to enter the barrier layer ALD Forming a barrier layer on the surface of the substrate; and moving the substrate from the processing chamber, through a transfer module of the integrated system, into a processing module for depositing a copper seed layer, the copper seed crystal The layer deposition method is used as a part of the rescue system, and in the processing module for depositing the copper seed layer, the copper seed layer deposition is performed on the surface of the copper layer, and the integrated system is realized in the integration. The system is rotated within a controlled environment to limit exposure of the substrate to uncontrolled environments outside of the integrated system. 37 200832612 27'The film deposition method of the 26th item of the application scope of the application of the eye, further includes: moving the substrate from the treatment module for the deposition of the copper seed layer, and calling the person--the copper filling county 'The accumulation axis group is part of the integrated system; and within the copper interstitial acoustic treatment ^, the copper interstitial layer i product is deposited on the copper seed layer of the substrate; and the gap layer deposition treatment She moves the substrate through the _ integrated system, which is part of the integrated system; and after the substrate is cleaned, the substrate is cleaned after deposition of the copper interstitial layer. 28) The method of film deposition according to item 26 of the patent application, including several in the near screen: 29, such as the film on the μth page of the scope of the patent, the fourth (four), or the activation 30·= The film deposition method of the scope of claim 28 further includes: - in the wrong base: two: layer chamber 4 ^ complex L, such as the film deposition method, wherein the surface of the surface after the deposition of the substrate Contaminant or activation is prepared for copper seed layer deposition. 32. The thin film deposition method of claim 26, wherein the integrated system is deposited under conditions that limit exposure to an uncontrolled environment outside the integrated system at 38 200832612 The ruthenium film on the substrate of the copper wiring inside improves the EM (Electromigration) characteristics of the copper wiring. 33. An integrated system for depositing a film for depositing a thin film on a substrate of a copper wiring, comprising: a processing chamber having a plurality of proximal joints, using selected ones of the proximal joints for surface treatment and ALD; a vacuum transfer module coupled to the processing chamber, the vacuum transfer module for transferring the substrate in the integrated system; ringing < processing module for depositing copper seed layer; a transfer mode of a controlled environment And a transfer module coupled to the vacuum deposition module and the controlled environment, the vacuum preparation chamber is used in the vacuum transfer module And transferring the substrate between the transfer modules of the controlled environment, wherein the integrated system implements a controlled environment shift in the integrated system to limit exposure of the substrate to an uncontrolled environment outside the integrated system . Lu 34. The integrated system for deposited film of claim 33, further comprising: a processing module for depositing a copper interstitial layer, a transfer module coupled to the controlled environment; and ', ' a substrate cleaning A processing module is coupled to the transmission module of the controlled environment. The invention relates to an integrated system for depositing thin films of the 33rd patent, and further comprising: a wafer cassette for accommodating the substrate before or after processing the substrate in the integrated system; and a vacuum preparation chamber, Connected to the wafer cassette and the vacuum transfer module, the vacuum preparation chamber is used to assist the transfer of the substrate/board, 39 200832612 between the wafer cassette and the vacuum transfer module. 36. The integrated system for deposited film of claim 33, wherein the one of the proximal contacts is used to deposit an ALD barrier layer of copper wiring. 37. The integrated system for deposited films of claim 33, wherein the one of the proximal joints is used to deposit an ALD backing layer of copper wiring. 38. The integrated system for deposited film of claim 33, wherein one of the proximal joints is used for surface preparation prior to ALD, and the other proximal joint is used for surface post-treatment after ALD . An integrated system for depositing a film according to claim 33, wherein the selected near head comprises a front joint for surface preparation, a proximal joint for ALD, and a proximal joint for ALD. And a proximal joint for surface finishing. 4 〇 ί 请 请 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 整合 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The substrate is exposed to oxygen. XI, schema·· 40
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US11/736,514 US20080260963A1 (en) 2007-04-17 2007-04-17 Apparatus and method for pre and post treatment of atomic layer deposition
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