200826158 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種磊晶方法，特別是指一種用於製 造咼光取出效率（light extraction )之固態發光元件的蟲晶 方法。 【先前技術】 固恶發光元件是新一代的人造光源之一，以發光二極 體（LED )為例，其製程技術成熟，兼且具有壽命長、省電 、體積小、驅動電壓低、反應速率快、辨識率高等優點， 已在日常生活中隨處可見其蹤影應用。 參閱圖1，一般發光二極體丨包含一塊基材n、一層磊 晶形成在該基材11上並可以光電效應產生光的量子單元12 ，及二片設置在該量子單元12上以提供電能的電極13。 當自二電極13施加電能時，電流通過量子單元a使 電子-電洞覆合（combination)而產生光，產生的光在發光 二極體1内部不斷的折射與反射，最後經由發光二極體^ 與外界接觸的界面射出。 由量子單元12產出的光的效率稱為内部發光效率，而 由發光二極體丨與外界接觸的界面（通常是指自量子單元 相反於基材Η的頂面）射出的光的效率稱之為光取出效 率（_ extraction);目前氮化物發光二極冑^的内部發光 效率約可朗60〜鳩，而絲出效㈣料切2^因 此，現階段的研究主要是致力於改善元件的光取出效率。 根據研九’提幵凡件的光取出效率主要可從增加散射 5 200826158 == 發出並向基材U方向行進的光路徑著手-=成此U政射的最主要變因則包括了基材u ”土材12的結構又與後續形成量子單元^ 曰BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an epitaxial method, and more particularly to a method of in-situ crystals for producing a solid-state light-emitting element for light extraction. [Prior Art] The solid-state illuminating element is one of the new generation of artificial light sources. Taking the light-emitting diode (LED) as an example, its process technology is mature, and it has long life, power saving, small volume, low driving voltage, and reaction. The advantages of fast speed and high recognition rate have been seen everywhere in daily life. Referring to FIG. 1, a general light-emitting diode includes a substrate n, a quantum unit 12 which is epitaxially formed on the substrate 11 and can generate light by a photoelectric effect, and two sheets are disposed on the quantum unit 12 to supply electric energy. Electrode 13. When electric energy is applied from the two electrodes 13, a current is passed through the quantum unit a to cause electron-hole bonding to generate light, and the generated light is continuously refracted and reflected inside the light-emitting diode 1, and finally via the light-emitting diode. ^ The interface with the outside world is shot. The efficiency of the light produced by the quantum unit 12 is referred to as the internal luminous efficiency, and the efficiency of the light emitted by the interface of the light-emitting diode 丨 with the outside (generally referred to as the top surface of the quantum unit opposite to the substrate Η) is called The light extraction efficiency (_extraction); the current internal luminous efficiency of the nitride light-emitting diode is about 60 鸠, and the silk is effective (4) cutting 2^ Therefore, the current research is mainly aimed at improving the components. Light extraction efficiency. According to Yan Jiu's light extraction efficiency, the light extraction path can be increased from the increase of scattering 5 200826158 == and the light path to the direction of the substrate U -= the main cause of this U Zheng Zheng includes the substrate u "The structure of the soil material 12 and subsequent formation of quantum units ^ 曰
=程彼此緊密相依’因此，此部份的研究必須同時克H 材11結構與後續的磊晶製程。 最早，日本特開平u-274568號發 * 用機械研磨的方式粗化基材u與量子單元12'連接= 疋田於械械研磨造成基材 表面111的粗化是隨機的，所以在後心晶成長量子單 疋12日寺，會產生遙晶成長不易聚合的問題， 元 生產的良率，故未被業界所採用。 a7L# 之後，日本第2001_267242號發明專利案，則揭示在美 材表面形成長條且規則間隔分布的溝_脊結構（groo ve_r咖 咖cture)，試圖散射自量子單元發出並向基材方向行進的 光路徑，進而增加光取出效率。 參閱圖2,但是，這種基材仍會在磊晶成長時，因為受 限於蟲晶成長的必然機制，而在臨靠近脊狀結構頂部周緣 形成包覆有空氣的孔隙14 (v〇ids);且由於孔隙Μ中空 與蟲晶形成之量子單元的折射率差值，較基材與量子= 的折射率差值更大’所以反而造成自量子單元發出並向基 材方向行進的光的重複行進，而減少了原欲提昇的光取2 效率’另外此等溝-脊結構在實際蟲晶成長時也存在有不易 200826158 聚合的問題，進而影響元件生產的良率。 此外，美國第2004/0129948號發明專利案揭示先在基 材表面形成多數凹孔’之㈣於各凹孔巾填錢定折射率 值與晶格係數的材質，然後再行蟲晶成長量子單元，藉著 形娜數凹孔以及填充於凹孔中的預定材質，避免磊晶 成長量子單元時於凹孔頂部形成孔隙14而減少光的重複行 進’同時也可散射形成之量子單元發出並向基材方向行進 的光路徑，進而增加光取出效率。= The process is closely related to each other. Therefore, the research in this part must be carried out simultaneously with the structure of the H material 11 and the subsequent epitaxial process. The earliest, Japanese special Kaiping u-274568 issued * The roughening of the substrate u and the quantum unit 12' by means of mechanical grinding = The roughening of the substrate surface 111 caused by the mechanical grinding of the field is random, so the back center crystal The growth of the quantum single 疋 12th Temple will cause the problem that the growth of the crystal growth is not easy to be polymerized, and the yield of the Yuan production is not adopted by the industry. After a7L#, the invention patent No. 2001_267242 of Japan discloses that a long and regularly spaced groove-ridge structure (groo ve_r) is formed on the surface of the material, attempting to scatter from the quantum unit and proceed toward the substrate. The light path, which in turn increases the light extraction efficiency. Referring to Figure 2, however, such a substrate will still form an air-encapsulated aperture 14 near the top edge of the ridge structure due to the inevitable mechanism of growth of the crystallites during epitaxial growth (v〇ids). And because the difference in refractive index between the hollow cells and the crystallites formed by the hollow crystals is larger than the difference between the refractive index of the substrate and the quantum =, it causes the light emitted from the quantum unit and traveling toward the substrate. Repeated travel, which reduces the efficiency of the light that is intended to be improved. In addition, these trench-ridge structures also have problems in the polymerization of actual insect crystals, which may not affect the polymerization of components, which in turn affects the yield of component production. In addition, U.S. Patent Application Publication No. 2004/0129948 discloses that a plurality of recessed holes are formed on the surface of the substrate, and (4) a material for which the refractive index value and the lattice coefficient are filled in each of the concave apertures, and then the crystal growth quantum unit is further processed. By means of the number of recessed holes and the predetermined material filled in the recessed holes, the formation of the apertures 14 at the top of the recessed holes is reduced when the quantum cells are epitaxially grown to reduce the repeated travel of light, and the quantum elements which are also scattered can be emitted and directed. The light path that travels in the direction of the substrate increases the light extraction efficiency.
此種方切實可以避免蟲晶成長時形成孔隙14而造成 光的重複行進，同時也可增加光取出效率；但是，此等製 程卻因為多了必須將預定折射率值與晶格係數的材質填充 入㈣孔洞中的製程步驟，而大幅增加製程成本，故並不 適合實際量產需求。 70件的光取出效率，仍是業界持 所以，如何有效提昇 續努力的方向之一。 【發明内容】 發明人仔細分析習知基材及其遙晶成長製程，得知造 =習知無論是溝—脊結構或是形成有凹孔結構的基材會在蠢 曰產生孔隙、降低光取出效率的原目，是由於基材粗化 ^⑹日及/或凹孔’均可以將其底面定義w晶成長時 品切—方向（即x_y方向）為非連續的低位蟲晶面， ^纟上表面則除了此等溝槽及/或凹孔形成的空缺之外 的：為遙晶成長時沿該第-…三方向均為連續 问立—面，所以當蟲晶成長時，自每-低位蟲晶面成 200826158 核長晶的晶種在沿該第一、二方向成長為面態樣的晶體結 構後’即無法再往第一、二方向成長擴張，而僅能向第二 方向（即咼度方向，z方向）以面態樣成長增厚，而高位磊 晶面成長的晶種則可沿著第一、二、三方向三維同步成長 口此 g自母一低位蠢晶面成長的晶體結構增厚至臨靠 近高位磊晶面時，會因為溝槽及/或凹孔側周面上半部本就 極難成核長晶，而使得分別在高、低位磊晶面成長的晶體 結構在相互聚合時，於此等無法成核長晶的側周面上半部 形成孔隙，進而造成後續製備之元件的光取出效率降低。 口此’本發明之目的，即在提供一種可以提昇元件光 取出率的磊晶方法。 ^再者，本發明之另一目的，即在提供一種可以提昇後 續製得之元件的光取出率的基材。 於疋，本發明一種磊晶方法，包含以下的步驟。 ^首先備製一塊具有一層體，及複數島狀物的基材，且 該層體包括一個實質由彼此相垂直之一第一方向與一第二 方向界定的表面，該複數島狀物彼此相間隔地自該表面沿 —垂直於該第一、二方向的第三方向凸伸。 接著定義該表面為一磊晶成長時沿該第一、二、三方 向為連續的低位磊晶面’同時’定義該每一島狀物具有一 貧質平行於該低位蟲晶面且為蟲晶成長時沿該第一、二方 向為非連續的高位磊晶面。 然後使欲蟲晶成長的晶種同時自該高、低μ晶面成 又，自該低位磊晶面成長的晶種是沿該第一、二、三方向 8 200826158 同步三維成長為連續晶體結構，^每一高 的晶種沿該第一、-太Λ p ^ ^ 战長 …一 —万向成長後被侷限，繼而以面態樣向 第三方向成長增料非連續晶體結構。 最後繼續蠢晶忐且 i 士 /视日日成長，使自該低位磊晶面三維成長的連 續晶體結構成县梯ρ 5 # ^ ^ 曰厚至貝貝平行於該高位磊晶面，進而使 〆連只日B體、、、。構與每_高蟲晶晶面成長之非連續晶體結構 相互成長聚合成一體而形成一磊晶膜。 、 本毛月種以島狀物形成連續蟲晶面的基材， 適用於向上蟲晶成長n日日膜，該基材包含-層體，及 複教島狀物。 〜該層體具有—個實質由彼此相垂直之-第-方向與— 第二方向界定的表面。 一該複數島狀物彼此相間隔地自該表面沿一垂直於該第 曰、方向的第二方向凸伸’而使該層體表面可定義為蟲 :曰，長％ /0 3亥第一、二、三方向為連續的低位蟲晶面，且 °曰玄母-島狀物具有-實質平行於該低位蟲晶面並定義為磊 曰曰成：蚪冶a亥第一、二方向為非連續的高位磊晶面。 當磊晶成長時’晶種自該高、低位磊晶面同時成長， 且自該低位蟲晶面成長的晶種是沿該第一、二、三方向同 :三維成長為連續晶體結構’自每—高位蠢晶面成長的晶 亥第一、二方向成長後被侷限而以面態樣向第三方向 成長為非連續晶體結構’且當該連續晶體結構成長增厚至 貫質平行於該高位蟲晶面時’該連續晶體結構與每一高蟲 晶晶面成長之非連續晶體結構相互成長聚合成一體而形成 9 200826158 該蠢晶膜。 ^ 本發明的功效在於基材形成有高、低位磊晶面，|以 - 低位磊晶面成三維的空間連續成長晶體結構，同時配合高 位磊晶面僅能以面態樣往高度方向一維磊晶增厚晶體結構 ，以磊晶聚合形成無孔隙的磊晶膜，進而提昇後續磊晶形 成之發光兀件的光取出效率。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 參閱圖2,本發明磊晶方法的一較佳實施例，是磊晶形 成無孔隙的蟲晶膜5，進而製備具有高光取出效率的發光元 件（發光二極體）。 , 配合爹閱圖3，首先進行步驟2卜備製一塊具有一層 " 體3卜及複數島狀物32的板狀基材3,該層體31包括一 個實質由彼此相垂直之-第—方向1〇〇與—第二方向2〇〇 界定的表面311’該複數島狀物32彼此相間隔地自該表面 川沿一垂直於該第一、二方向ι〇〇 2〇〇的第三方向· =伸；較佳地’該基材31可以利用離子耗合電漿氣體飯刻 、、里’而s基材31疋盖寶石基材時’氯化氯（Bci3/Cl2 是較佳的選擇’類㈣，也可以制濕則成型基材， 此時當基材31是藍寶石基材時，則以鱗酸溶液（则3)為 10 200826158 主要的蝕刻溶液，蝕刻溫度則需不小於250°C ;而成型出之 任兩島狀物32彼此的間距介於200nm〜10// m，每一島狀物 32的高度介於0.5〜10//m，高位磊晶面的面積不大於10x10 //m2，此夕卜，島狀物32的形狀可利用蝕刻硬罩的選擇與蝕 刻時蝕刻方向性的選擇而得到例如圓柱體、角椎體、半球 體等等不同的形狀。 接著進行步驟22，定義該層體31表面311為磊晶成長 時沿該第一、二、三方向100、200、300為連續的低位磊 晶面400 ;同時，定義該每一島狀物32具有一實質平行於 該低位蠢晶面400且為遙晶成長時沿該第一、二方向100、 200為非連續的高位磊晶面500。 配合參閱圖4，然後進行步驟23，使欲蠢晶成長的晶 種同時自該多數高位磊晶面500及該低位磊晶面400成核 長晶’自該低位蠢晶面400成長的晶種是沿该弟*^、-一、 三方向100、200、300同步三維成長為連續晶體結構4，而 自每一高位磊晶面500成長的晶種沿該第一、二方向100、 200成長後被侷限，繼而以面態樣向第三方向300成長增厚 為非連續晶體結構5 ;較佳地，此步驟需控制自該高、低位 磊晶面500、400的磊晶成長條件，使自該低位磊晶面400 磊晶成長速率大於自該複數高位磊晶面500磊晶成長速率 〇 配合參閱圖5，最後進行步驟14，繼續磊晶成長，當 自該低位磊晶面400三維成長的連續晶體結構4成長增厚 至實質平行於該高位磊晶面500時，在高位磊晶面500成 11 200826158 ==體結構5才會開始沿第-、二方"。、 社構4相二曰進而與自低位磊晶® 400成長的連續晶體 目互成長聚合L形成^膜6。 參閱圖6，當LV齡餘卞从朴 氮化鎵率半導〜 材的材料，並配合磊晶成長 二==膜時’本發…一實可 為:方=化鎵”_料 製得可發出波以及後續製程步驟 度為mmd，較;知:二:的發光二極體時，其裸晶亮 81以形成有孔隙之蟲晶膜的發光二極體的 :石 副’大幅提昇近us，間接可以證明本發明 之一方法確實可以有效提昇元件的光取出效率。 有’本發明是有鐘於粗化基板確實可以 Lt 元件的光取出效率，但又基於粗化的 Γ曰:是採用溝·脊結構或是形成有凹孔的結構，均會在 隙、反而會降低光取出效率，於是自整個蟲 :曰一、时研究，得知孔隙生成的成因，進而提出沿 弟一、二、三方向均為連續的低位蟲晶面，配合沿第一、 :::為非連續的高位蟲晶面，而可在蟲晶成長的過程中 低位磊晶面成核長晶的晶種可沿第一、二、二 成為連續的晶體結構’而自高位蟲晶:成:的晶 、在成核長晶成面態樣的晶體結構後，即盔法再往第一 面：：向成長擴張，而僅能向第三方向（即高度方向）以 …成長增厚’而高位蟲晶面成長的晶種則可沿著第一 12 200826158 :二二方向三維同步成長’因此，#自低位蟲晶面成 曰曰肢結構增厚至臨靠近m日日面時，晶體結構可以^ 長聚編孔隙的完整蟲晶冑，不會有不易聚合的問題， ，而可提：後續製備之元件的光取出效率，並提高生產的 良率’確實達到本發明的創作目的。Such a method can effectively prevent the formation of the pores 14 when the crystal grains grow, thereby causing repeated traveling of light, and at the same time, the light extraction efficiency can be increased; however, these processes must be filled with a material having a predetermined refractive index value and a lattice coefficient. Into the (four) process steps in the hole, and significantly increase the cost of the process, it is not suitable for actual mass production needs. The efficiency of light extraction of 70 pieces is still one of the reasons why the industry is holding it. How to effectively improve the direction of continuous efforts. SUMMARY OF THE INVENTION The inventors carefully analyzed the conventional substrate and its crystal growth process, and learned that it is known that the groove-ridge structure or the substrate formed with the pit structure will generate pores and reduce the light extraction efficiency. The original purpose is that the substrate roughening ^ (6) day and / or the recessed hole ' can define the bottom surface of the w crystal growth when the cut - direction (ie x_y direction) is a discontinuous low parasitic crystal face, ^ 纟In addition to the voids formed by the grooves and/or the recessed holes, the surface is continuous in the third-direction of the growth of the crystallites, so when the crystallites grow, from the per-low position After the crystal crystals of 200826158 nuclear crystal growth grow into a surface-like crystal structure along the first and second directions, they can no longer grow in the first and second directions, but only in the second direction (ie, The twist direction, the z direction) grows thicker in a surface state, and the seed crystal grown on the high-level epitaxial surface can grow in a three-dimensional synchronous manner along the first, second, and third directions, and the g grows from the mother's low-level stupid crystal face. When the crystal structure is thickened to near the high-level epitaxial surface, it will be due to grooves and/or depressions. It is extremely difficult to nucleate long crystals on the side surface of the side surface, so that the crystal structures grown on the high and low epitaxial planes are mutually polymerized, and the half-sided surface of the side surface which cannot be nucleated and grown is formed. The pores, which in turn cause a decrease in the light extraction efficiency of the subsequently prepared components. The purpose of the present invention is to provide an epitaxial method which can increase the light extraction rate of a component. Further, another object of the present invention is to provide a substrate which can improve the light extraction rate of a subsequently produced component. In the present invention, an epitaxial method of the present invention comprises the following steps. First preparing a substrate having a layer body and a plurality of islands, and the layer body comprises a surface substantially defined by a first direction and a second direction perpendicular to each other, the plurality of islands being phased with each other The protrusions are spaced apart from the surface in a third direction perpendicular to the first and second directions. Then defining that the surface is a continuous low-level epitaxial surface along the first, second, and third directions during epitaxial growth, and simultaneously defining that each island has a lean parallel to the lower parasite and is an insect When the crystal grows, it is a discontinuous high-level epitaxial plane along the first and second directions. Then, the seed crystals of the crystal growth are simultaneously formed from the high and low μ crystal faces, and the seed crystals growing from the low epitaxial surface are synchronously three-dimensionally grown into a continuous crystal structure along the first, second and third directions 8 200826158. ^ Each high seed crystal is confined along the first, - too Λ p ^ ^ warfare ... one - universal growth, and then grows in a third direction to increase the discontinuous crystal structure. Finally, the stupid crystals continue to grow and the i/s grows day by day, so that the continuous crystal structure growing from the low-level epitaxial surface three-dimensionally grows into a county ladder ρ 5 # ^ ^ thick to babe parallel to the high-level epitaxial surface, thereby Qilian only has B body, , and. The discontinuous crystal structure which grows with each crystal plane is grown and polymerized to form an epitaxial film. The present invention is a substrate for forming a continuous worm surface by an island shape, and is suitable for growing up to n-day film of the upper worm crystal, the substrate comprising a layer body, and a resurrection island. ~ The layer has a surface substantially defined by the -first direction and the second direction perpendicular to each other. The plurality of islands are spaced apart from each other from the surface in a second direction perpendicular to the second direction, and the surface of the layer can be defined as: 曰, 长% /0 3 The second, third, and third directions are continuous low worm planes, and the 曰 曰 mother-island has - substantially parallel to the low worm plane and is defined as Lei 曰曰 蚪: 蚪 a ahai first and second directions Non-continuous high-level epitaxial surface. When the epitaxial growth occurs, the seed crystal grows simultaneously from the high and low epitaxial planes, and the seed crystal grown from the low parasite surface is the same along the first, second and third directions: three-dimensional growth into a continuous crystal structure 'from Each of the high-level stupid crystal faces grows in the first and second directions and is confined to grow into a discontinuous crystal structure in the third direction in the surface state' and grows thicker to the cross-parallel when the continuous crystal structure grows thicker. In the case of a high parasite crystal plane, the continuous crystal structure and the non-continuous crystal structure in which each of the high crystal crystal planes grow grow into a single body to form a single crystal film. ^ The effect of the invention is that the substrate is formed with a high and low epitaxial surface, and the low-order epitaxial surface is formed into a three-dimensional spatially continuous crystal structure, and the high-order epitaxial surface can only be one-dimensionally oriented in the height direction. The epitaxial thickened crystal structure is formed by epitaxial polymerization to form a non-porous epitaxial film, thereby improving the light extraction efficiency of the subsequent epitaxially formed light-emitting element. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to Fig. 2, a preferred embodiment of the epitaxial method of the present invention is to epitaxially form a non-porous worm film 5, thereby preparing a luminescent element (light emitting diode) having high light extraction efficiency. Referring to FIG. 3, firstly, step 2 is performed to prepare a plate-like substrate 3 having a layer of "body 3" and a plurality of islands 32, the layer 31 including a substantially perpendicular to each other - the first The direction 1〇〇 and the second direction 2〇〇 define a surface 311'. The plurality of islands 32 are spaced apart from each other from the surface along a third direction perpendicular to the first and second directions ι〇〇2〇〇 · = extension; preferably 'the substrate 31 can utilize the ion-consuming plasma gas to engrave, the inside' and the s substrate 31 to cover the gem substrate when the chlorine chloride (Bci3/Cl2 is the preferred choice) 'Class (4), can also be wet to shape the substrate, when the substrate 31 is a sapphire substrate, the scaly acid solution (then 3) is 10 200826158 main etching solution, the etching temperature needs to be not less than 250 ° C; and the distance between any two islands 32 formed is between 200 nm and 10//m, the height of each island 32 is 0.5 to 10//m, and the area of the high-level epitaxial surface is not more than 10×10. //m2, in addition, the shape of the island 32 can be obtained, for example, by using a choice of an etching hard mask and an etching direction during etching. The vertebral body, the hemisphere, and the like have different shapes. Then, in step 22, the surface 311 of the layer body 31 is defined as a continuous low-level epitaxial plane along the first, second, and third directions 100, 200, and 300. At the same time, each of the islands 32 is defined to have a high-level epitaxial surface 500 substantially parallel to the lower-level stupid surface 400 and which is discontinuous along the first and second directions 100, 200 when the crystallite grows. Referring to FIG. 4, then proceeding to step 23, the seed crystals to be crystallized are simultaneously nucleated from the plurality of high-order epitaxial planes 500 and the low-level epitaxial planes 400. The seed crystal grown from the low-order stupid surface 400 is Along the brothers*^, -1, and 3 directions 100, 200, 300, the three-dimensional growth into a continuous crystal structure 4, and the crystal growth from each high-level epitaxial surface 500 grows along the first and second directions 100, 200 It is limited, and then thickened into a discontinuous crystal structure 5 in a third direction 300 by a surface pattern; preferably, this step needs to control the epitaxial growth conditions from the high and low epitaxial faces 500, 400, The epitaxial growth rate of the low epitaxial plane 400 is greater than the epitaxial crystal from the plurality of high epitaxial planes 500 The long-rate 〇 is matched with FIG. 5, and finally step 14 is performed to continue epitaxial growth. When the continuous crystal structure 4 grown from the low-order epitaxial plane 400 is grown thicker to be substantially parallel to the high-order epitaxial plane 500, at a high level. Epitaxial surface 500 into 11 200826158 == Body structure 5 will begin to grow along the first- and second-party", the four-phase structure of the social structure and the continuous crystal growth from the lower epitaxial® 400. Membrane 6. Referring to Figure 6, when the LV age embers from the GaN rate semi-conducting material ~, and with the epitaxial growth of the second == film when the 'this hair ... a real can be: square = gallium" _ material system The wave that can be emitted and the subsequent process steps are mmd, which is better than the light-emitting diode of the second: the bare LED is 81 to form the light-emitting diode of the apertured crystal film: Near us, it can be indirectly proved that one of the methods of the present invention can effectively improve the light extraction efficiency of the component. In the present invention, it is possible to have a light extraction efficiency of the Lt element in the roughened substrate, but based on the roughening: a groove/ridge structure or a structure in which a concave hole is formed, both of which are in the gap, Will reduce the efficiency of light extraction, so from the whole insect: 曰一, 时研究, know the cause of pore formation, and then propose that the first, second and third directions are continuous low worm planes, with the first along, :: : It is a non-continuous high parasite crystal surface, and in the process of crystal growth, the seed crystal of the low-level epitaxial nucleation crystal can be a continuous crystal structure along the first, second and second, and from the high crystal: After the crystal structure of the nucleation crystal is formed into a surface-like crystal structure, the helmet method is further extended to the first side: the growth to the third direction (ie, the height direction) is thickened by ... 'The seed crystals that grow in the high worm plane can grow in three dimensions along the first 12 200826158: two directions. Therefore, #from the lower worm plane to the limb structure thickens to near the m-day surface. The crystal structure can be used to grow the pores of the intact insect crystals, and there is no difficulty in polymerizing. , But may be mentioned: light extraction efficiency and improve the production yield of the element subsequent preparation 'does reach the creation object of the present invention.
At惟以上所述者，僅為本發明之較佳實施例而已，當不 ，以此限定本發明實施之範圍，即大凡依本發明中請^利 範圍及發明說明内容所作之簡單的等效變化與㈣，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一示意圖，說明發光二極體的橼造； 圖2是一 SEM照片，說明習知具有粗糙表面之基材磊 晶時’形成包覆有孔隙的磊晶膜； 圖3是一流程圖，說明本發明_種磊晶方法的一較佳 實施例； 圖4是一立體剖視圖，說明用於本發明磊晶方法中的 基材； 圖5是一立體剖視圖，說明實施本發明磊晶方法時， 蠢晶成長的過程； 圖6是一立體剖視圖，說明實施本發明磊晶方法而磊 晶成長一層磊晶膜；及 圖7是一 SEM照片，說明實施本發明磊晶方法而磊晶 成長一層無孔隙之磊晶膜。 13 200826158 【主要元件符號說明】 100 第一方向 24 步驟 200 第二方向 3 基材 300 第三方向 31 層體 400 低位蠢晶面 311 表面 500 南位蠢晶面 32 島狀物 21 步驟 4 連續晶體結構 22 步驟 5 非連續晶體結構 23 步驟 6 蠢晶膜The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the simple equivalent of the scope of the invention and the description of the invention. Changes and (4) are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing the fabrication of a light-emitting diode; FIG. 2 is a SEM photograph showing the formation of an epitaxial film coated with pores when a substrate having a rough surface is epitaxially formed. 3 is a flow chart illustrating a preferred embodiment of the present invention, and FIG. 4 is a perspective cross-sectional view illustrating a substrate used in the epitaxial method of the present invention; FIG. 5 is a perspective cross-sectional view. FIG. 6 is a perspective cross-sectional view showing the epitaxial growth of an epitaxial film by performing the epitaxial method of the present invention; and FIG. 7 is an SEM photograph illustrating the implementation of the present invention. The epitaxial method is used to epitaxially grow a layer of epitaxial film without voids. 13 200826158 [Description of main component symbols] 100 First direction 24 Step 200 Second direction 3 Substrate 300 Third direction 31 Layer 400 Low-order surface 311 Surface 500 South stupid surface 32 Island 21 Step 4 Continuous crystal Structure 22 Step 5 Discontinuous Crystal Structure 23 Step 6 Stupid Crystal Film
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