200824070 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種晶圓製程用器具，特別是關於一種 晶圓承載具。 【先前技術】 在晶圓製程中，特別是發光二極體(LED)製程中，使 用到需要熱傳導快速且熱分佈均勻之製程，包括有機金屬 化學氣相沉積（Metal Organic Chemical Vapor Deposition; MOCVD)、化學氣相沉積（Chemical Vapor Deposition; CVD)、退火(annealing)、乾蝕刻（dry etch)、異質晶圓接合 (wafer bonding)等。在這些製程中，要求晶圓的表面溫度 分佈必須非常均勻，因此，承載晶圓的器具需要有很好的 導熱特性，以達成快速且均勻地升降溫度。 以下介紹幾種常用製程的特性和要求。 (MOCVD) MOCVD屬於高溫製程，其製程溫度介於5〇〇〜14〇〇它 ’因此’此製私中所使用的晶圓承載具，除了要求導熱係 數高以外，尚必須具有耐高溫不變形、熱膨脹係數小等特 性，才能在高溫環境下㈣使用，並使承_晶圓熱分佈 均勻，而得到分佈均勻的沉積薄膜。 目前用於MOCVD製程的晶圓承載具，其材質可分為 整體高純度石墨材質、高純度石墨體外部财碳化邦⑹ 薄膜被覆以及單純碳切材質共三種，這些器具的特點及 5 200824070 其遭遇的問題分述如下。 (1)整體高純度石墨材質 此材料具備高導熱係數、 材單位體積之價格低廉、 宁向=、材料取得容易、素 特性，因此可以用來大a @加卫容易、熱膨脹係數小等 ，由於石墨不耐某些化地生產晶81承载具。但是 之-，因而對石墨承載具:^用大量的氨做為反應氣體 石墨碎屑散佈於反應*厥重的侵银，而被腐餘後的 的污染源，易污染晶圓：導體中，亦成為反應環境中 具僅適合使祕無腐l j讀失敗，因此，石墨承载 ，即使未受化學物質：【材質之化學物質的製程。而且 生粉塵，污染整個製程及反=墨本身也相為氧化而產 清洗而被侵蝕損耗或散發出：：二:石墨承载具還會因為 ()二屯度石墨體外部錢有石炭化石夕薄膜披覆 載具的腐_ 由碳化矽的耐腐蝕特性延長曰曰' 猎 =巧污染的問題。此承^ ^讀常見的M0CVD晶圓承載具，然而，由於碳化石夕 二石墨之熱祕餘不同，在高溫下❹，特別是經過反 復升降溫度的歷史以後’碳化石夕鍍膜可能自 或剝離，而且在鏟膜時因為無法在每—方向及—些細部: 置鑛上均-厚度的被賴，這些膜厚*足的區域容易遭到 200824070 腐減壞，進而由破壞處釋放出污染物 另一方面，雖然破切抵抗氨的_性_:=二 作用後仍齡被其腐姓’此外，因為碳化㈣膜需 的賴技賴為制，纽率又高，目此其縣較單= 墨材質之晶圓承載具高出許多。 ' (3)整體碳化矽材質 為改善上述二者的問題，有人使用單純碳化矽製作晶 ®承載具。碳切材質的晶圓承載具可以承受長時間於腐 蝕性反應氣體或其他化學品中對晶圓承載具本體之侵蝕 且厌化夕的‘熱係數比咼純度石墨更高，因此製程所生 產的有機金屬磊晶薄膜層的膜厚均勻度非常高。然而，碳 化石夕原料的價格昂貴，且因為碳化石夕材料的機械硬度非常 高，因此在加工上非常困難，有些機台甚至其承載具的設 。十有不可犯以加工達成的情況，而且加工用的刀具（一般為 鑽石刀具）消耗非常快速，加工成本因此更加提高，造成碳 、 化矽B曰圓承載具的成本過於昂貴，無法與前二者匹敵，因 而失去了市場應用的意義，所以目前也很少有此類的晶圓 承載具。 (CVD) • CVD製程是將反應室裡經化學反應後所產生的分子 ’利用磁場或電場的導引，沉積在晶圓的表面上。CVD製 私也疋南溫製程，其運作須配合3〇〇〜8〇〇。〇不等的高溫， 以游離電子或離子（形成電漿）及磁場等配合輔助反應使反 應時間縮短，因此，在此製程中，晶圓承載具亦必須具有 7 200824070 耐高溫不變形、導熱係數高、熱膨脹係數小等特性。 CVD製程所使用的晶圓承載具，大多是以金屬鋁材經 過陽極處理後製作，但是鋁的耐熱性不佳，易因長時間的 高溫而變形，且陽極處理後之陽極鍍膜層易剝離，因此壽 命不長。 〈退火/加熱固晶〉 退火及加熱固晶製程是利用加熱爐管或是快速升溫 爐，藉由控制晶圓的溫度，消除高溫薄膜製程中時所殘留 的應力；或是將所做的氧化銦錫（ITO)薄膜層經由加熱程序 轉變成透明電極；或是將製作好的薄膜以加熱方式均勻化 並加強薄膜層與薄膜層、薄膜層與晶圓之間的結合強度， 使得薄膜層不易剝落。由於晶圓表面的溫度分佈會影響此 製程的結果，因此所使用的晶圓承載具必須要能快速反應 溫度的升降，並且讓溫度分佈均勻。 業界目前使用的晶圓承載具材質有高純度石墨體外 部鍍碳化矽薄膜被覆及純碳化矽材質等，其缺點如同前述 的MOCVD —般，有使用壽命不長或成本太高等問題。 〈乾#刻〉 乾蝕刻製程，是將經過曝光及顯影等程序的晶圓置於 電椠喷頭（plasma shower head)下方之晶圓承載具上，利用 游離電子或離子所形成之電漿束，以電場或磁場之控制導 引，轟擊至晶圓表面，以去除晶圓表面上不需要的部份， 需要保留之部份則以光阻劑屏蔽。 電漿束之形成及以離子轟擊晶圓這些步驟，會在作用 8 200824070 區域局部產生100〜500°c不等之溫度，此溫度累積在晶圓 上導致晶圓溫度升高，晶圓上之光阻因而硬化，甚至因為 蓄積的溫度過高而燒焦。為解決因為溫度過高造成光阻燒 焦或晶圓產生電性異常的現象，目前在乾蝕刻製程中，常 藉由在晶圓承載具下方加裝冷卻器，以便在製程中降低晶 圓表面溫度或維持晶圓穩定的製程溫度。因此，乾蝕刻製 程中的晶圓承載具除了需具備耐高溫不變形、導熱係數高 、熱膨脹係數小等特性以外，還必須能承受離子轟擊而不 損壞。 目前業界經常使用於乾蝕刻製程之晶圓承載具，可以 分為整體高純度石墨材質、石英材質、氧化鋁陶瓷材質及 單純碳化矽材質等四類，其材質特性及缺點說明如下。 (1) 整體高純度石墨材質 石墨材質的優點包括南導熱係數、耐南溫及成本低廉 ，缺點則在於不耐受離子轟擊，且被轟擊後的石墨碎屑散 佈於反應室或反應腔體中，成為反應環境中的污染源，污 染晶圓，導致製程失敗或蝕刻率不佳。此外，石墨本身的 氧化發塵亦會污染整個製程及反應室，而且單純石墨材質 的晶圓承載具無法承受多次清洗，因此使用壽命短，僅適 用於低功率或無導通電流時無電漿射出之電漿蝕刻環境。 (2) 石英材質 為抵抗離子轟擊的侵蝕，有人以石英製作乾蝕刻製程 用之晶圓承載具，希望藉由石英材質較石墨材質财受離子 轟擊的特性而延長承載具的使用壽命。石英材質有材料取 9 200824070 得容易、材料成本不高、加工容易及製造成本低等優點， 目前，這種石英材質的晶圓承載具最為常見。但是石英材 貝的導熱係數低，導熱性差，雖然較能承受離子轟擊的侵 蝕，卻谷易因為散熱問題造成晶圓過熱或光阻劑燒焦，因 此，石英材質之晶圓承載具的厚度不能太厚，以免散熱不 佳。此外，此種石英材質的晶圓承載具不能使用於有氟或 氟化物參與反應之製程，以免受氟化物之侵蝕而縮短使用 壽命。 (3) 氧化鋁(Al2〇3)陶瓷材質 為抵抗離子轟擊，亦有人以氧化鋁陶瓷製作乾蝕刻製 程用之晶圓承載具’希望藉由氧她喊較石墨及石英更 此财文離子轟擊之特性，延長承載具的使料命。此種晶 圓承載具亦是目前常見的、然而，和石英材質相似，氧: 銘陶莞的導熱係數亦低，導熱性差，易因散熱問題造成曰 圓過熱或光阻劑燒焦，因此其厚度也不能太厚。也有人= 減為晶®承載具之本體，並在其外部喷塗-層氧化銘陶 瓷希！利用金屬銘的高導熱性及氧化紹陶究的耐受離子 轟擊特性’改善導熱及壽命問題，但是金屬缺氧 熱膨脹係數差距大’在高溫下會造成㈣之間卿或氧化 ㈣μ㈣層膨脹的金屬_開’因此使用壽命仍不佳 〇 (4) 碳化石夕材質 為改善上述二者的問題，有人使用單純碳化 圓承載具之材質。以碳切材f製作的乾_製程用^曰曰 J曰白 200824070 圓承載具或下電極，因為機械強古 電漿轟擊之環境及腐錄反麋::、可⑷m時間於 石黑更古，田屮力古道舳 材貝之V熱係數比高純度 石墨更…因此沒有導熱不佳或散熱的問題，是，如前 所述’碳切之雜及加工_昂#，使得碳切晶圓承 载具的成本無法與前三者匹敵，失去了市場應用的意義。 〈異質晶圓接合〉 異貝日曰圓接合是將已做好薄膜層的晶圓，例如石申化鎵 (GaAs)上成長鋁鎵銦磷（AlGalnP)膜，利用晶圓接合之技術 將晶圓與不會吸收發光的材質如磷化鎵（GaP)做接合，以增 加發光效岸。此接合方式需使用250〜400°C的溫度以及一 定之壓力，才能造成晶圓接合的效果。此製程為了溫度分 佈均勻性，一般是以石墨做為壓合時之治具或晶圓承载具 ，以確保高溫下不變形且熱分佈均勻。但是石墨材質在大 氣環境下會氧化，因此必須經常將其表面的氧化層去除， 以保持壓合面之精密度。然而晶圓承載具厚度變薄時，其 使用壽命也會相對減短。 為改善前述之晶圓製程用承載具所面臨的問題，一種 兼顧製程品質及成本的晶圓承載具，乃為所冀。 【發明内容】 本發明的目的，在於提供一種適用於高溫製程，兼顧 成本及使用壽命之晶圓承載具。 根據本發明，一種氮化铭陶究晶囡承載具’係在鼠化 200824070 鋁陶瓷基底上以機械加工的方式形成晶圓容置槽等構造 ，其具有耐腐蝕、耐高溫且導熱均勻之特性，適合使用在 但不限於諸如LED等製程中，包括M0CVD、CVD、退火 、加熱固晶、乾蝕刻、異質晶圓接合等需要承受高溫及化 學藥品、離子轟擊腐蝕之程序。 【實施方式】 本發明以氮化鋁(A1N)陶瓷製作晶圓承載具，其係在氮 化鋁陶瓷基底上加工製作出承載晶圓之機構及其他細節 。該氮化鋁陶瓷基底大致為板狀塊體，形狀及其上加工的 構造則配合機台的設計。 氮化紹陶瓷包括以下的特點： 1·氮化銘陶瓷材料具有高機械強度及高導熱特性，斑 目前較常使狀石墨、石，驗碳化㈣或整體碳化二 之晶圓=载具三者之導熱係數接近，用來製作晶圓承1 取代目珂的晶圓承載具，不會有因為熱傳導係數相差太： 而=要大巾田度變更製程參數之困擾，且使用時具有相 熱刀佈均句特性。用於乾_時，因為導 氣 載的晶圓不會因為蓄熱及或是散熱問題： 熱或燒焦。 、观且劑過 •虱匕鋁陶瓷之熱膨脹係數小，不會因 埶 熱膨脹導致變形，改變晶承 ‘:；生的 之精度而影響導熱。 I、及被間接觸面 3·氮化銘H的化學特性及物理特性穩定，在 12 200824070 MOCVD、CVD及乾_製程中，不易因腐飿性化學品（ 如氨）、離子或電子束轟擊、或腐蝕性清洗液（如hf)之侵 蝕造成壽命縮短，因此可以延長晶圓承載具之使用壽命。 4.氮化鋁陶瓷之軟化變形溫度大於16〇〇t：，因此可以 提供足夠的穩定性供MOCVD及CVD、退火、固晶及異質 晶圓接合等高溫製程使用。 /'、 5·氮化鋁陶瓷之材料成本比高純度碳化矽材料低，價 格接近氧化鋁（Al2〇3)陶瓷，且其硬度亦低於碳化矽材料， 而與氧化鋁（Al2〇3)陶瓷之加工特性相近，因此加工困難度 低，可以大量生產製作晶圓承載具，不會因為材料及加工 造成成本過南而失去市場價值。 表一知納習知常用之材料與氮化銘陶莞的各項係數 ，以供進一步比較。這些具體的數據可以佐證上述氮化鋁 陶瓷材料的特性。 表一 石墨 氧化铭陶兗 氮化鋁陶瓷 碳化石夕 陶瓷 TOYO IG-11 TOYO ISO-63 99.5% 99.6% 94% 99% 密度 g/cm3 1.77 1.82 3.1 3.92 3.3 3.3 3.1 彎曲強度 Kgf/cm2 400 780 40 42 30 30 40 膨脹係數 10-6/°C 4.5 5.6 3·7 7.5 4.3 4.3 3.7 介電常數 1MHZ - 40 10 9 9 40 介電損失 氺 10-4 - - — 2 5 5 — 體阻抗 歐姆/mm 1100 1550 >1013 >1014 >1014 >1014 >1013 介電強度 Kv/mm - - — 15 15 15 — 13 200824070 熱傳導率 W/mK 116 70 23 23 184 86 270 圖1顯示根據本發明的MOCVD磊晶盤，其係在氮化 鋁陶瓷基底10上加工形成晶圓容置槽12。在圖1中，左 圖為磊晶盤的正面，右圖為其反面。由於MOCVD之製程 溫度介於500〜1400°C，因此，此製程中所使用的晶圓承載 具，需具有導熱係數高、耐高溫不變形、熱膨脹係數小等 特性，氮化鋁陶瓷製作的磊晶盤可以符合此要求。CVD製 程與MOCVD類似，因此，氮化鋁陶瓷材質之晶圓承載具 同樣適用於CVD製程。 圖2顯示根據本發明製作的加熱爐管及快速升溫爐用 載晶盤，其係在氮化鋁陶瓷基底20上加工形成晶圓容置 槽22。在圖2中，左圖為載晶盤的上視圖，中圖為其側視 圖，右圖為其立體圖。由於晶圓表面的溫度分佈會影響退 火或加熱固晶的結果，因此製程所使用的晶圓承載具必須 要能快速反應溫度的升降，並且讓溫度分佈均勻，而氮化 鋁陶瓷具有極佳的熱傳導率，適合用來製作退火、加熱固 晶等製程用載晶盤。此外，有些薄膜不耐長時間的加熱， 或是對熱的反應不好，因此需要以快速的升降溫方式以縮 短加熱時間。一般快速升溫爐的溫度會在短時間内由200 °C升溫至800°C，再降溫至200°C，因此晶圓承載盤必須 要有非常好的導熱特性及極小的熱膨脹率，以避免瞬間因 熱膨服造成承載盤破裂。圖3是載晶盤的另一種式樣。在 圖3中，載晶盤係在氮化鋁陶瓷基底30上加工形成晶圓 14 200824070 今置槽32，左圖為載晶盤的上視圖，右圖為其立體圖 =側邊有3個小孔34供插人感溫棒，用來回饋加熱溫 又的讯號，以控制加熱器。這種載晶盤可以讓不同尺寸的 晶圓共用。 』八丁的 圖4顯示根據本發明的感應搞合電漿侧機(ICP)的 ^曰圓承健，其係在氮仙喊基底4()上加謂成晶圓 合置才曰42在圖4中，左圖為晶圓承載盤的上視圖，右圖200824070 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a wafer processing tool, and more particularly to a wafer carrier. [Prior Art] In the wafer process, especially in the process of light-emitting diode (LED), a process requiring rapid heat conduction and uniform heat distribution, including Metal Organic Chemical Vapor Deposition (MOCVD) is used. Chemical Vapor Deposition (CVD), annealing, dry etch, wafer bonding, and the like. In these processes, the surface temperature distribution of the wafer must be very uniform. Therefore, the wafer-carrying device needs to have good thermal conductivity to achieve rapid and uniform temperature rise and fall. The characteristics and requirements of several common processes are described below. (MOCVD) MOCVD is a high-temperature process with a process temperature of 5〇〇~14〇〇. It is therefore a wafer carrier used in this process. In addition to high thermal conductivity, it must have high temperature resistance and no deformation. The characteristics of small thermal expansion coefficient can be used in high temperature environment (4), and the heat distribution of the wafer is uniform, and a uniformly distributed deposition film is obtained. Currently, the wafer carrier used in the MOCVD process can be divided into an overall high-purity graphite material, a high-purity graphite body, an external carbonization state (6), a film coating, and a simple carbon cutting material. The characteristics of these instruments and the experience of 5 200824070 The problem is described below. (1) Overall high-purity graphite material This material has high thermal conductivity, low cost per unit volume, and is easy to obtain, easy to obtain, and easy to use. Therefore, it can be used for large a @加卫, small thermal expansion coefficient, etc. Graphite is not resistant to certain production of crystal 81 carrier. But - and thus the graphite carrier: ^ with a large amount of ammonia as a reaction gas, graphite debris scattered in the reaction * heavy intrusion of silver, and the source of pollution after the corrosion, easy to contaminate the wafer: conductor, also In the reaction environment, it is only suitable for making the unsuppressed lj read failure, therefore, the graphite is carried, even if it is not subject to chemical substances: [material chemical process. Moreover, the dust is polluted, the whole process is polluted, and the ink itself is also oxidized and cleaned to be eroded or dissipated: 2: The graphite carrier will also have a carboniferous fossil film due to the (2) dilatite graphite body. The rot of the tarpaulin _ is extended by the corrosion resistance of strontium carbide. This is to read the common M0CVD wafer carrier. However, due to the different heat secrets of carbonized carbide, the graphite is exposed to high temperatures, especially after repeated history of temperature rise and fall. And in the process of shovel film, because it can not be in every direction and some details: the thickness of the thickness of the mine, the thickness of these areas is easy to be damaged by 200824070 rot, and then the pollutants are released from the damage On the other hand, although the cut-off resistance to ammonia is still affected by the _ sex _:= two, it is still the name of its rot. In addition, because the carbonization (four) film needs to rely on the technology, the rate is high, so the county is more = The wafer carrier of the ink material is much higher. ' (3) Overall carbonized tantalum material In order to improve the above two problems, some people use pure tantalum carbide to make crystal ® carrier. The carbon-cut wafer carrier can withstand the erosion of the wafer carrier body for a long time in a corrosive reaction gas or other chemicals, and the heat coefficient is higher than that of the 咼 purity graphite, so the process produces The film thickness uniformity of the organometallic epitaxial film layer is very high. However, carbon carbide raw materials are expensive, and because the mechanical hardness of carbonized stone materials is very high, it is very difficult to process, and some machines even have their carriers. Ten can not be committed to the processing of the situation, and the processing tools (usually diamond tools) consumption is very fast, the processing cost is therefore increased, resulting in carbon, chemical, B, round bearing equipment is too expensive, can not be the first two They are rivals and thus lose the meaning of market applications, so there are currently few such wafer carriers. (CVD) • The CVD process deposits molecules on the wafer by chemical or electric field generated by chemical reaction in the reaction chamber. The CVD system is also used in the South Wen process, and its operation must be coordinated with 3〇〇~8〇〇. The high temperature varies from 〇 to 游离, and the reaction time is shortened by the combination of free electrons or ions (forming plasma) and magnetic field. Therefore, in this process, the wafer carrier must also have 7 200824070 high temperature resistance, no deformation, thermal conductivity High, low coefficient of thermal expansion and other characteristics. The wafer carrier used in the CVD process is mostly made of metal aluminum after anodizing, but the heat resistance of aluminum is not good, it is easy to be deformed due to high temperature for a long time, and the anode coating layer after anodization is easily peeled off. Therefore, the life is not long. <Annealing/heating solid crystal> Annealing and heating solid crystal processing is to use a heating furnace tube or a rapid heating furnace to control the temperature of the wafer to eliminate the residual stress in the high temperature thin film process; or to oxidize The indium tin (ITO) film layer is converted into a transparent electrode by a heating process; or the formed film is homogenized by heating and the bonding strength between the film layer and the film layer, the film layer and the wafer is strengthened, so that the film layer is not easily Peel off. Since the temperature distribution on the surface of the wafer affects the results of this process, the wafer carrier used must be able to react quickly to temperature rises and even temperature distribution. The wafer carrier materials currently used in the industry are high-purity graphite coated with carbonized tantalum film and pure tantalum carbide. The shortcomings are similar to the above-mentioned MOCVD, and have long service life or high cost. Dry etching process is a process in which a wafer subjected to exposure and development processes is placed on a wafer carrier under a plasma shower head, and a plasma beam formed by free electrons or ions is used. Guided by an electric or magnetic field, bombarded onto the surface of the wafer to remove unwanted portions of the wafer surface, and the portion that needs to be retained is shielded with photoresist. The formation of the plasma beam and the bombardment of the wafer with ions will locally generate temperatures ranging from 100 to 500 ° C in the region of 20082008070. This temperature accumulates on the wafer and causes the wafer temperature to rise. The photoresist is thus hardened and burnt even because the accumulated temperature is too high. In order to solve the phenomenon that the photoresist is burnt or the wafer is electrically abnormal due to excessive temperature, in the dry etching process, a cooler is often installed under the wafer carrier to reduce the surface of the wafer in the process. Temperature or process temperature to maintain a stable wafer. Therefore, in addition to the characteristics of high temperature resistance, high thermal conductivity, and small thermal expansion coefficient, the wafer carrier in the dry etching process must be able to withstand ion bombardment without damage. Currently, the wafer carrier used in the dry etching process in the industry can be divided into four types: the overall high-purity graphite material, the quartz material, the alumina ceramic material, and the simple tantalum carbide material. The material characteristics and shortcomings are described below. (1) The advantages of the overall high-purity graphite material include the south thermal conductivity, the south temperature resistance and the low cost. The disadvantage is that the ion bombardment is not tolerated, and the graphite debris after bombardment is dispersed in the reaction chamber or the reaction chamber. It becomes a source of pollution in the reaction environment, contaminating the wafer, resulting in process failure or poor etch rate. In addition, the oxidative dust of graphite itself can pollute the entire process and reaction chamber, and the wafer carrier of pure graphite can not withstand multiple cleanings, so the service life is short, and it is only suitable for low-power or non-conduction current without plasma injection. Plasma etching environment. (2) Quartz material In order to resist the erosion of ion bombardment, some people use quartz to make wafer carrier for dry etching process. It is hoped that the life of the carrier will be prolonged by the characteristics of quartz material compared with graphite material. Quartz material has materials 9 200824070 Easy to get, low material cost, easy processing and low manufacturing cost. At present, this quartz wafer carrier is the most common. However, the quartz material shell has low thermal conductivity and poor thermal conductivity. Although it can withstand the erosion of ion bombardment, it is easy for the wafer to overheat or the photoresist to be burnt due to heat dissipation. Therefore, the thickness of the quartz wafer carrier cannot be Too thick to avoid poor heat dissipation. In addition, such a quartz wafer carrier cannot be used in a process in which fluorine or fluoride is involved in the reaction to protect it from fluoride attack and shorten the service life. (3) Alumina (Al2〇3) ceramic material is resistant to ion bombardment. Some people also use alumina ceramics to make wafer carrier for dry etching process. I hope that by oxygen, she shouts more than graphite and quartz. The characteristics of the bearing extend the life of the carrier. Such a wafer carrier is also common at present, however, similar to quartz material, oxygen: Ming Taowan has a low thermal conductivity, poor thermal conductivity, and is susceptible to overheating due to heat dissipation problems or scorch of photoresist, so The thickness should not be too thick. Also someone = reduced to the body of the crystal® carrier, and sprayed on the outside - layer oxidation Ming Tao porcelain! Using the high thermal conductivity of the metal and the tolerant ion bombardment characteristics of the oxidized sulphur's ability to improve the heat conduction and life problems, but the large difference in the coefficient of thermal expansion of the metal anoxic 'causes at high temperatures will cause (4) between the metal or the oxidized (four) μ (four) layer of expanded metal _ On 'The service life is still not good 〇 (4) Carbonized stone eve material In order to improve the above two problems, some people use the material of a simple carbonized round carrier. The dry _ process made of carbon cutting material f is used to make a round bearing or a lower electrode, because the environment is strong and the plasma is bombarded by the environment and the rot is recorded::, can be (4) m time in Shihei The V-heat coefficient of the 屮 屮 古 舳 贝 贝 贝 更 ... ... ... ... ... ... 因此 因此 因此 因此 因此 因此 因此 因此 热 热 V V V V V V 热 热 V 热 热 热 V V V V V V V V V The cost cannot match the top three and loses the meaning of market application. <Heterogeneous Wafer Bonding> Isobe 曰 接合 接合 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异 异The circle is joined to a material that does not absorb light, such as gallium phosphide (GaP), to increase the luminous effect. This bonding method requires a temperature of 250 to 400 ° C and a certain pressure to cause wafer bonding. For the uniformity of temperature distribution, this process generally uses graphite as a fixture or wafer carrier for pressing to ensure no deformation at high temperatures and uniform heat distribution. However, graphite materials are oxidized in an atmospheric environment, so the oxide layer on the surface must be removed frequently to maintain the precision of the pressed surface. However, when the thickness of the wafer carrier is thinned, its service life is relatively short. In order to improve the problems faced by the above-mentioned wafer processing carrier, a wafer carrier having both process quality and cost is considered. SUMMARY OF THE INVENTION It is an object of the present invention to provide a wafer carrier that is suitable for high temperature processes and that combines cost and service life. According to the present invention, a nitriding crystal enamel carrier is formed on a ratified 200824070 aluminum ceramic substrate by mechanical processing to form a wafer accommodating groove, etc., which has corrosion resistance, high temperature resistance and uniform heat conduction characteristics. It is suitable for use in, but not limited to, processes such as LEDs, including M0CVD, CVD, annealing, heating solid crystal, dry etching, hetero-wafer bonding, etc., which are required to withstand high temperatures and chemical, ion bombardment corrosion. [Embodiment] The present invention is a wafer carrier made of aluminum nitride (A1N) ceramic, which is processed on a aluminum nitride ceramic substrate to fabricate a wafer carrying mechanism and other details. The aluminum nitride ceramic substrate is substantially a plate-like block, and the shape and the structure processed thereon are matched with the design of the machine. Nitriding ceramics include the following characteristics: 1. Niobium-based ceramic materials have high mechanical strength and high thermal conductivity. Speckle is currently more commonly used in graphite, stone, carbonation (4) or integrated carbonization wafer = carrier The thermal conductivity is close, and the wafer carrier used to make the wafer bearing 1 is not replaced because the heat transfer coefficient is too different: and = the problem of changing the process parameters of the large towel field, and the phase heat knife is used. Cloth sentence characteristics. For dry _, because the airborne wafer does not suffer from heat storage or heat dissipation: hot or charred.观 观 剂 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕 虱匕I, and the contact surface 3 · Niobing Ming H's chemical and physical properties are stable, in 12 200824070 MOCVD, CVD and dry process, not easily bombarded by corrosive chemicals (such as ammonia), ions or electron beams Or the erosion of corrosive cleaning fluids (such as hf) results in a shortened life, thus extending the life of the wafer carrier. 4. The softening temperature of aluminum nitride ceramics is greater than 16〇〇t:, so it can provide sufficient stability for high-temperature processes such as MOCVD and CVD, annealing, die bonding and hetero-wafer bonding. /', 5· The material cost of aluminum nitride ceramics is lower than that of high-purity tantalum carbide materials, the price is close to that of alumina (Al2〇3) ceramics, and its hardness is also lower than that of tantalum carbide materials, and with aluminum oxide (Al2〇3) The processing characteristics of ceramics are similar, so the processing difficulty is low, and the wafer carrier can be mass-produced without losing the market value due to the cost of materials and processing. Table 1 summarizes the commonly used materials and the various factors of Niobin Mingtaowan for further comparison. These specific data can support the characteristics of the above aluminum nitride ceramic materials. Table 1 Graphite Oxide Inorganic Ceramics Aluminum Nitride Ceramics Carbonized Ceramics TOYO IG-11 TOYO ISO-63 99.5% 99.6% 94% 99% Density g/cm3 1.77 1.82 3.1 3.92 3.3 3.3 3.1 Bending Strength Kgf/cm2 400 780 40 42 30 30 40 Expansion coefficient 10-6/°C 4.5 5.6 3·7 7.5 4.3 4.3 3.7 Dielectric constant 1MHZ - 40 10 9 9 40 Dielectric loss 氺10-4 - - 2 5 5 — Body impedance ohm/mm 1100 1550 >1013 >1014 >1014 >1014 >1013 Dielectric strength Kv/mm - - 15 15 15 - 13 200824070 Thermal conductivity W/mK 116 70 23 23 184 86 270 Figure 1 shows according to the invention The MOCVD epitaxial disk is processed on the aluminum nitride ceramic substrate 10 to form a wafer receiving groove 12. In Fig. 1, the left picture shows the front side of the epitaxial disk, and the right picture shows the reverse side. Since the process temperature of MOCVD is between 500 and 1400 ° C, the wafer carrier used in the process needs to have the characteristics of high thermal conductivity, high temperature resistance, no deformation, small thermal expansion coefficient, and the like. The crystal plate can meet this requirement. The CVD process is similar to MOCVD, so the wafer carrier of aluminum nitride ceramic is also suitable for CVD processes. Fig. 2 shows a heating furnace tube and a quick-heating furnace carrier wafer prepared in accordance with the present invention, which are processed on an aluminum nitride ceramic substrate 20 to form a wafer receiving groove 22. In Fig. 2, the left diagram is a top view of the carrier disk, the middle view is a side view thereof, and the right side is a perspective view thereof. Since the temperature distribution on the surface of the wafer affects the result of annealing or heating the solid crystal, the wafer carrier used in the process must be able to react quickly to the temperature rise and even temperature distribution, while the aluminum nitride ceramic has excellent properties. Thermal conductivity, suitable for making crystal plates for processing such as annealing and heating solid crystal. In addition, some films are not resistant to prolonged heating or do not respond well to heat, so it is necessary to shorten the heating time by means of rapid temperature rise and fall. Generally, the temperature of the rapid heating furnace will be raised from 200 °C to 800 °C in a short time, and then cooled to 200 °C. Therefore, the wafer carrier must have very good thermal conductivity and a small thermal expansion rate to avoid an instant. The carrier disk is broken due to thermal expansion. Figure 3 is another version of the carrier disk. In FIG. 3, the crystal carrying disc is processed on the aluminum nitride ceramic substrate 30 to form a wafer 14 200824070. The left side is a trough 32, the left side is a top view of the crystal carrying disc, and the right side is a perspective view thereof. The hole 34 is provided with a temperature sensing rod for feeding back a warm signal to control the heater. This carrier plate allows wafers of different sizes to be shared. Figure 4 of Yading shows the 曰 曰 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承 承In the middle, the left picture shows the upper view of the wafer carrier, right
為其侧視圖。由於乾糊製程中電漿束之形成及以離子A !晶圓等步驟’會產生1〇〇〜5〇〇t：不等之溫度，同時亦有 蓄積溫度造成光阻硬化或缝的問題，因此，韻刻製程 中的日日®承載具除了必須能承受電漿束及離子轟擊之外 ，仍需具備耐高溫不變形、導_數高、_脹係數小等 特性’而氮化㈣兗具有適當的機械硬度、高的導熱性、 小的熱膨脹係數、穩定的化學特性及物理特性，因此適合 製作此類晶圓承載盤。 200824070 【圖式簡單說明】 圖1係根據本發明的MOCVD磊晶盤； 圖2係根據本發明的退火及加熱固晶用載晶盤； 圖3係另一種根據本發明的載晶盤；以及 圖4係根據本發明的感應耦合電漿蝕刻機的晶圓承載 淫。 【主要元件符號說明】 10 氮化銘陶兗基底 12 晶圓容置槽 20 氮化鋁陶瓷基底 22 晶圓容置槽 30 氮化銘陶究基底 32 晶圓容置槽 34 小孔 40 氮化銘陶瓷基底 42 晶圓容置槽 16For its side view. Due to the formation of the plasma beam in the dry paste process and the steps of the ion A! wafer, the temperature will be 1〇〇~5〇〇t: the temperature is not equal, and there is also the problem that the accumulated temperature causes the photoresist to harden or sew. Therefore, in addition to being able to withstand the plasma beam and ion bombardment, the day-to-day bearing device in the rhyme engraving process still needs to have the characteristics of high temperature resistance, no deformation, high number of conduction, small expansion coefficient, and nitriding (4) With suitable mechanical hardness, high thermal conductivity, small coefficient of thermal expansion, stable chemical properties and physical properties, it is suitable for the fabrication of such wafer carrier trays. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a MOCVD epitaxial disk according to the present invention; FIG. 2 is a crystal carrying disk for annealing and heating solid crystal according to the present invention; FIG. 3 is another atomizing disk according to the present invention; Figure 4 is a wafer carrier for inductively coupled plasma etching machine in accordance with the present invention. [Main component symbol description] 10 Nitride Ming Tao 兖 substrate 12 Wafer accommodating groove 20 Aluminum nitride ceramic substrate 22 Wafer accommodating groove 30 Nitride enamel substrate 32 Wafer accommodating groove 34 Small hole 40 Nitriding Ming ceramic substrate 42 wafer receiving slot 16