TW200822392A

TW200822392A - Solid-state lighting device and applications thereof

Info

Publication number: TW200822392A
Application number: TW95141404A
Authority: TW
Inventors: Shih-Ching Chen
Original assignee: Epistar Corp
Priority date: 2006-11-08
Filing date: 2006-11-08
Publication date: 2008-05-16
Also published as: TWI315918B

Abstract

A solid-state lighting device and applications thereof are provided, wherein the solid-state lighting device comprises a substrate, a lighting unit, a transparent electrode, a light-reflecting layer, a first electrode and a second electrode. The lighting unit formed on the substrate has a plurality of bulges to make itself rough and uneven in surface. The light-reflecting layer formed on the vertical sidewalls of the bulges. The transparent electrode formed on the top surface of the bulges is electrically connected to the first electrode, and the second electrode is electrically connected to the lighting unit. When electricity passing through the first electrode and the second electrode to make light emitted from the lighting unit, the light that is not parallel the vertical sidewall can be reflected back to the lighting unit by the light-reflecting layer.

Description

200822392 本'Λ發明說明:^ ...........〜細麵叙總【發明所屬之技術領域】本發明是有關於_***# & , _ 、種口 .忐叙光元件及其相關運用，且特別疋有關於一種出光而且亡嫌/ 25尤面具有幾何結構圖案的固態發光元件。【先前技術】 •固悲發光兀件，例如高亮度發光二極體（High —Brightness Lift Emitting diode; BH_LED)或有機發光二極體，具有低耗 •私里4氐务熱里、插作壽命長、耐撞擊、體積小、反應速度㈤以及可發出穩定波長的色光等良好光電特性，因此常應用於家電、儀表之指示燈、光電產品之應用。隨著光電科技的進步，固態發光元件在提升發光效率、使用壽命以及亮度等方面已有長足的進步，在不久的將來將成為未來發光元件的主流。然而固態發光元件的效能係取決於發光單元 (Electr〇-luminescence Layer)之内部量子效率（化化⑺“ • Quantum Efficiency)與光取出效率（Extraction Efficiency)。其中内部量子效率係由電子和電洞復合之比例所決定。光取出效率則是在固態發光元件所產生的光子，自光出射表面出射到外界環境的比率。以發光二極體為例，拜先進蠢晶技術，例如分子束蠢晶，（Molecular Beam Epitaxy ; MBE)和金屬有機化學氣相沉積 (Metal-Organic Chemical Vapor Deposition; MOCVD)之賜，其所形成的多層量子井（Multiple Quantum Wells)結構的内部量 5 200822392 子放率已經幾乎可達理論值的。極體係Μ用ϋ _ 相對地由於傳統發光二杜體係知用+導體材質，其具有合受刭蚱κ^界角度，多數光子曰又到L界表面的全反射，而無法被半導髀分併^ 尤出射表面射出，最後 *體材貝所吸收’造成光取出效率偏低。之光2 =此一問題，習之技術乃採用改變固態發光元件發光-桎2的幾何結構來進一步増進光取出效率，例如在么先一極體光出射表面上形成立方體、倒金字塔形凸起，或在發光二極體切成：=去笑端的係數或介電常數變化的光子曰體⑽：·成具有不同週期折射增加光子出射角度。 (°一一)結構，藉以 ::’由於上述幾何結構和光子晶體的結二：二：程控制上必須非常精準-寸的誤差水準 (vi at ion)相當窄。以读具氣形成H μ A 皮長為460nm的藍光發光二極體為 =之門光子晶體所需的間距尺寸大約在-請至正負^至^5的誤差水準大約為正負1G個百分比（亦即為貝“nm至1 ι·5ηιη之間），智姜口 λ φ5 , ^ ^ ) I私難度因此大幅提升，相對地也大巾田增加了發光二極體的製造成本。表面：二：=射表面的幾何結構會使固態發光元件的上升，電：：小，而使得固態發光元件驅動電壓(Vf) 上升’電流岔度過大而造成元件燒毀。【發明内容】因此有需要提供一藉且士性的ffl &八丄 /、有k越光取出率與低驅動電壓特胜的固恶發光元件以及並饤 /、I作方法，可以在不需要增加固態 200822392 發光7L件之製程精度的前提下，増進固態發光元件光取出率。200822392 This 'inventive description: ^ ........... ~ fine-faced general [Technical field of invention] The present invention is related to _ Yin Yin # &, _, seed mouth. Optical elements and their associated applications, and particularly with respect to a solid-state light-emitting element that emits light and has a geometric pattern of suspicion. [Prior Art] • Solid-light illuminating elements, such as High-Brightness Lift Emitting diode (BH_LED) or organic light-emitting diodes, have low-cost, private, and thermal life. Long, impact-resistant, small volume, reaction speed (5) and good photoelectric properties such as color light that can emit stable wavelengths, so it is often used in the application of home appliances, instrument indicators, optoelectronic products. With the advancement of optoelectronic technology, solid-state light-emitting components have made great progress in improving luminous efficiency, service life and brightness, and will become the mainstream of future light-emitting components in the near future. However, the performance of solid-state light-emitting elements depends on the internal quantum efficiency (Chemistry (7) “ Quantum Efficiency” and “Extraction Efficiency” of the illuminating unit. The internal quantum efficiency is determined by electrons and holes. The ratio of the composite is determined by the ratio of the photon generated by the solid-state light-emitting element to the external environment from the light-emitting surface. Taking the light-emitting diode as an example, advanced crystal technology, such as molecular beam crystal , (Molecular Beam Epitaxy; MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD), the internal quantity of the multilayer Quantum Wells structure formed by the system 5 200822392 It can reach almost the theoretical value. The polar system uses ϋ _ relatively speaking, because the traditional illuminating two-du system uses the +conductor material, it has the 刭蚱κ^ boundary angle, and most photons 全 to the total reflection of the L boundary surface. It can't be split by semi-conducting and ^ is especially emitted from the surface, and finally * absorbed by the body shell, which causes the light extraction efficiency to be low. 2 = This problem, the technique of the art is to further change the light extraction efficiency by changing the geometry of the solid-state light-emitting element - 桎 2, for example, forming a cube, an inverted pyramid-shaped protrusion on the first-pole light-emitting surface, or The light-emitting diode is cut into: = photon body (10) with a change in coefficient or dielectric constant of the laughing end: · having different periodic refractions to increase the photon exit angle. (° 1) structure, by: 'Because of the above geometry And the photonic crystal of the second two: two: the process must be very precise - the error level (vi at ion) is quite narrow. To read the gas to form a H μ A blue light emitting diode with a skin length of 460nm is the door of = The required pitch size of the photonic crystal is about - the positive and negative ^ to ^ 5 error level is about plus or minus 1G percentage (that is, between the shell "nm to 1 ι · 5ηιη), Zhi Jiangkou λ φ5, ^ ^ The private difficulty of I has been greatly increased, and the manufacturing cost of the light-emitting diode has been increased. Surface: 2: = The geometry of the surface of the shot causes the solid-state light-emitting element to rise, and the electricity: is small, causing the solid-state light-emitting element to drive the voltage (Vf) to rise. The current is too large and the component is burnt. SUMMARY OF THE INVENTION Therefore, there is a need to provide a borrowed ffl & gossip /, a light-emitting light-emitting element having a k-light extraction rate and a low driving voltage, and a method of 饤 /, I, can be Under the premise of increasing the process accuracy of the solid state 200822392 illuminating 7L piece, the light extraction rate of the solid state light emitting element is broken.

本發明的目的就是在提供一種固態發光元件包括：基板、發光單元、反光層、透明電極層'第一電極以及第二電極。發光單兀係疊設於基板之表面，且發光單元之外表具有複數個突起結構，使其為一凹凸表面。反光層係設於突起結構的，數個立壁表面。透明電極層係覆蓋於突起結構之上端面。第-電極係電性連結於透明電極層’第二電極，係電性連接於發光單元。藉此當第—電極及第二電極導通，使發光單元發光時’由發光單S所射出之非平行立壁的光線，係可經由反光層之反射後，向外界射出。本舍明的另-目的就是在提供—種固態發光元件之製造方法，此-方法包括下述步驟：首先，提供一基板；再形成 -：先早凡疊設於基板之表面。接著形成一透明電極層，係覆盍於發光單元之上端面。再圖案化透明電極和發光單元，使發光單it具有由複數個突起結構所形成的凹凸表面。之後’形成一反光層，係設於φ 4 你叹於大起結構的立壁表面，並且於圖木:的透明電極層上形成第—電極，使其電性連結於透明電極層，以及形成一第二電極，電性連接發光單元。 2明的又„目的就是在提供—種固態發光元件包括：至屬基板、發光單元、反#@ πη β 反先層、透明電極層以及第-電極。叙先早係豐設於製作有電先單亓$冰#;目+ U杀旳金屬基板之表面，且發 …：：複數個突起結構，使其為-凹凸表面。覆蓋於突起結構之上端m 透明電極層，係糕面。弟一電極係電性連結於透明電極 7 200822392 層。藉此。，_當金屬基板與第一電極導通，使發光單元發光時，由’X光單元所射出之非平行於立壁的光線係可經由反光層之反射後，向外界射出。令货啊的再、 9的跣疋在挺供住四恐贫尤兀忏的裂造SUMMARY OF THE INVENTION An object of the present invention is to provide a solid state light emitting device comprising: a substrate, a light emitting unit, a light reflecting layer, a transparent electrode layer 'a first electrode, and a second electrode. The light-emitting unit is superposed on the surface of the substrate, and the light-emitting unit has a plurality of protrusion structures on the outer surface to make it a concave-convex surface. The reflective layer is provided on the surface of the raised structure and on several vertical walls. The transparent electrode layer covers the upper end surface of the protruding structure. The first electrode is electrically connected to the second electrode of the transparent electrode layer, and is electrically connected to the light-emitting unit. Thereby, when the first electrode and the second electrode are turned on to cause the light-emitting unit to emit light, the light of the non-parallel standing wall emitted by the light-emitting unit S can be reflected by the light-reflecting layer and then emitted to the outside. A further object of the present invention is to provide a method of fabricating a solid state light-emitting element, the method comprising the steps of: first, providing a substrate; and forming -: first overlapping the surface of the substrate. A transparent electrode layer is then formed to be attached to the upper end surface of the light-emitting unit. The transparent electrode and the light-emitting unit are patterned again so that the light-emitting sheet it has a concave-convex surface formed by a plurality of protrusion structures. Then 'form a reflective layer, set at φ 4. You sigh on the vertical wall surface of the large structure, and form a first electrode on the transparent electrode layer of the wood: electrically connected to the transparent electrode layer, and form a The second electrode is electrically connected to the light emitting unit. 2 Ming's purpose is to provide a kind of solid-state light-emitting elements including: the substrate, the light-emitting unit, the anti-#@ πη β anti-previous layer, the transparent electrode layer and the first electrode. The Syrian early system is rich in production and electricity. First single 亓 $冰#; 目+U kills the surface of the metal substrate, and emits...:: a plurality of protruding structures, making it a concave-convex surface. Covering the upper end of the protruding structure m transparent electrode layer, the cake surface. One electrode is electrically connected to the layer of the transparent electrode 7 200822392. Thus, when the metal substrate is electrically connected to the first electrode to cause the light emitting unit to emit light, the light emitted by the 'X-ray unit and non-parallel to the vertical wall can be After the reflection of the reflective layer, it is shot out to the outside world. The re-environment of the goods, the shackles of the 9 are very good for the four horrible cracks.

方：：此-方法包括下述步驟：首先提供一暫時基板，再形成:發光單元疊設於暫時基板之表面。之後接合-金屬基板於發光單元相對於暫時基板之—側，再移除暫時基板。接著， :成透明電極層覆蓋於發光單元因移除暫時基板所暴露出 “之側再圖案化透明電極層與發光單元，使發光單1 =個由突起結構所形成的喝面。之後於突起結構的一：义面形成反光層；並且於圖案化的透明電極層上形成第私極，使其電性連結於透明電極層上。根據Μ上所述之較佳實施例，本發明層塗佈於图態發光元件之發光單元突起結構的== :a來限制非平打於立壁的光線由發光元; =壁的光線經由反光層之反射先返回發光元件，= =以平行立壁的方向向外界射出。如此可增加平=斤入三#的光子數量，減少光子進人具有低折射係數之办Γ "貝的機率’以增進固態發光元件的光取出率。由工乳 f層來增進固態發光元件的光取出率具有不：要=2反悲發光元件的製程ρ ρ 1k咼固取可以解決f之技術爲提Μ 取出率而造成製程成本激增的問題。钕呵先【實施方式】 8 200822392 為讓本發明之上述和其他目的、特旦榀竹做和優點能更明顯易Μ ’下文特舉數種較佳實施例，並配 ^ 口尸附圖式作詳細說 :如下。但值得注意的是此較佳實施例其並非用以限制本發請參照第1Α圖和第則，第1Α圖係根據本發明的第 -幸父佳實施例所繪示的—種固態發光元件⑽的結構刹面圖。弟1Β圖係根據本發明的第二較佳實施例所繪示的一種固態發光元件100的結構剖面圖。固態發光元件ι〇〇勺某板120、發光單元104、反光層i"、透明電極層二二：極π 3以及第二電極丨丨5。电發光單it HM係、疊設於基板12〇之表面，且發光單元1〇4 之外表具有複數個突起結構104a，使里一從丹形成一凹凸表面。在本^明的第一較佳實施例之中，發光單早兀1 04係一種發夹二極體7G件。此一發光二極體元件包含 ° s ^ 種由同質结、異質結構、雙異質結構或多重量子井所組成的蟲B曰曰.構。 2成翁晶結構之材料可為磷化銘銦鎵（A1GaInp)系列半導體材貝，或為氮化鎵（GaN)系列之半導體材質。一在本發明的較佳實施例之中，磊s处 ion 絲日日結構係一種包括依序隹宜於基板120上的N型包覆層1〇1、 ,_ 王勒層103、以及p部包覆層109。其中p型包覆層1〇9係 1Π. ^ ^ .碎糸表面具有複數個突起結構 104a的圖案化層。在本發明的一此么士播u %丄、卜▲ 二貝知例之中，複數個突起、、、。構104a係由複數個立方體、圓柱 ^ π , . y 體或載去尖端的倒金字塔形凸起所組成。但此圖案化層較佳並由、—机加办士，丄係為一種光子晶體結構，八中複數個犬起結構1 〇4a具有调董日从百遇期性排列的折射係數（介電 9 200822392 常數）。反光層111係設於突起結構104a的立壁1〇4b表面1在本發明的實施例之中，反光層m係一種覆蓋於突起結構i〇4a二立壁104b表面的金屬層。然而在本發明的其它實施例之中，反光層111也可以由其他具有高反光特性的非金屬材質所組成。透明電極層117係覆蓋於突起結構104a之上端面。、在本實施例之中，透明電極層117係形成於？型包覆層109之突起結構104a上端面。而第一電極113則係位於透明電極層m 上，並與透明電極層117電性接觸。具有第二電性的第θ二電極115則位於發光單元104之一側，以使第二電極⑴藉由主動層⑽和第-電# 113電性連結。例#，在本發明^第一The method: the method includes the following steps: first, providing a temporary substrate, and then forming: the light emitting unit is superposed on the surface of the temporary substrate. Thereafter, the metal substrate is bonded to the side of the light-emitting unit with respect to the temporary substrate, and the temporary substrate is removed. Next, the transparent electrode layer covers the light-emitting unit to remove the temporary substrate to expose the "side of the patterning transparent electrode layer and the light-emitting unit, so that the light-emitting single 1 = a drinking surface formed by the protruding structure. The first layer of the structure forms a reflective layer; and a private electrode is formed on the patterned transparent electrode layer to be electrically connected to the transparent electrode layer. According to the preferred embodiment described above, the layer coating of the present invention The == :a of the protruding structure of the light-emitting unit of the light-emitting element of the picture state is used to limit the light that is not leveled on the vertical wall by the light-emitting element; the light of the wall is returned to the light-emitting element through the reflection of the reflective layer, == in the direction of the parallel vertical wall The outside world is shot. This can increase the number of photons in the flat = jin into three #, reduce the photon into the person with a low refractive index, and the probability of 'bee' to improve the light extraction rate of the solid state light-emitting element. The light extraction rate of the solid-state light-emitting element has no: the process ρ ρ 1k 要要 2 2 2 2 发光发光发光可以可以可以可以咼咼咼咼咼咼咼咼咼咼咼咼咼咼咼咼咼咼咼咼咼咼咼可以可以可以可以可以可以可以可以8 200822392 In order to make the above and other objects of the present invention, the advantages and advantages of the present invention can be made more obvious. 'The following are a few preferred embodiments, and the details are as follows: However, it is to be noted that the preferred embodiment is not intended to limit the present invention. Referring to FIG. 1 and FIG. 1 , the first diagram is a solid-state illumination according to the embodiment of the present invention. FIG. 1 is a cross-sectional view showing a structure of a solid-state light-emitting device 100 according to a second preferred embodiment of the present invention. A solid-state light-emitting device 〇〇〇〇 a plate 120, a light-emitting unit 104 , reflective layer i", transparent electrode layer 22: pole π 3 and second electrode 丨丨 5. Electroluminescence single it HM system, stacked on the surface of the substrate 12 ,, and the light-emitting unit 1 〇 4 has a plurality of appearances The protrusion structure 104a forms a concave-convex surface from the lining. In the first preferred embodiment of the present invention, the illuminating single early 兀104 is a hairpin diode 7G. The light-emitting diode The component contains ° s ^ species consisting of homojunction, heterostructure, double heterogeneity The structure of the worm or the multi-quantum well is composed of a bismuth crystal structure of the phosphatized indium gallium (A1GaInp) series semiconductor material or a semiconductor material of the gallium nitride (GaN) series. In a preferred embodiment of the present invention, the Rays day wire structure is an N-type cladding layer 1, ,1, _王勒层103, and p, which are sequentially disposed on the substrate 120. a cladding layer 109. wherein the p-type cladding layer 1〇9 is 1Π. ^ ^. The surface of the broken crucible has a patterned layer of a plurality of protruding structures 104a. In the present invention, the sputum broadcasts a 丄丄, 卜 ▲ In the case of the two shells, a plurality of protrusions, and structures 104a are composed of a plurality of cubes, a cylinder ^π, .y body or an inverted pyramid-shaped protrusion carrying a tip. However, the patterned layer is preferably composed of a machine-operated sergeant, and the lanthanide system is a photonic crystal structure. The eight-in-one dog-inducing structure 1 〇4a has a refractive index adjusted from a hundred-period arrangement. 9 200822392 constant). The light reflecting layer 111 is provided on the surface 1 of the standing wall 1 4b of the protruding structure 104a. In the embodiment of the present invention, the light reflecting layer m is a metal layer covering the surfaces of the two vertical walls 104b of the protruding structure i〇4a. However, in other embodiments of the invention, the reflective layer 111 may also be comprised of other non-metallic materials having high retroreflective properties. The transparent electrode layer 117 covers the upper end surface of the protrusion structure 104a. In the present embodiment, the transparent electrode layer 117 is formed in? The upper cladding layer 109 has an upper end surface of the protruding structure 104a. The first electrode 113 is located on the transparent electrode layer m and is in electrical contact with the transparent electrode layer 117. The second θ electrode 115 having the second electrical property is located on one side of the light emitting unit 104 such that the second electrode (1) is electrically connected by the active layer (10) and the first electrode #113. Example #, in the present invention ^ first

貫施例之中，第二電極115係位於N型包覆層ι〇ι上，藉由N 型包覆層101、主動層103、以及p型包覆層1〇9來鱼第—電極⑴電性連結。其中第二電極115與第一電極ιΐ3係位於主動層10 3的相同側。當第一電極U3及第二電極115#由發光單元1〇4而相互導通時，發光單元104所產生之光線，若非平行立壁職，會被反先層111反射而返回發光單元1〇4，再經過至少一次反射之後再以平行立壁104b的方向向外界射出。In the embodiment, the second electrode 115 is located on the N-type cladding layer ι〇1, and the fish-electrode (1) is provided by the N-type cladding layer 101, the active layer 103, and the p-type cladding layer 1〇9. Electrical connection. The second electrode 115 and the first electrode ι3 are located on the same side of the active layer 103. When the first electrode U3 and the second electrode 115# are electrically connected to each other by the light-emitting unit 1〇4, the light generated by the light-emitting unit 104 is reflected by the reverse first layer 111 and returned to the light-emitting unit 1〇4 if it is not parallel to the standing wall. After at least one reflection, it is emitted to the outside in the direction of the parallel vertical wall 104b.

基，請參照第2圖，第2圖係繪示形成第1A圖或第1B 固恶發光70件的製造流程圖。製造第1A圖或帛圖之固態發光元件包括下述步驟： ”請參照步驟S21’提供一基板120;再形成 70 104疊設於基板120之# ^ ^ ^ 干之表面。凊再參照步驟S22,於發光單 200822392 二〇二二上鈿面形成一透明電極層117。接著請參照步驟二圖案化透明電極層117和發光單元ι〇4，使發光單元1〇4 具有由複數個突起結構丨〇4所 * d W形成的一凹凸表面。之後請再 ^步驟，於突起結構叫的立壁_^ "明再參照步驟S25，於圖案化的透明電極層117上形成-弟-電極113,使第—電極113電性連結 117。以及形成一 m -雪枝^ 烕弟一電極115，電性連接發光單元1〇4(請表Referring to FIG. 2, FIG. 2 is a manufacturing flow chart for forming 70A or 1B solid light. The solid state light emitting device of the first aspect or the drawings includes the following steps: "Please refer to step S21" to provide a substrate 120; and then form 70 104 to be superposed on the surface of the substrate 120. Referring to step S22 A transparent electrode layer 117 is formed on the surface of the light-emitting single layer 200822392. Then, the transparent electrode layer 117 and the light-emitting unit ι 4 are patterned according to the second step, so that the light-emitting unit 1〇4 has a plurality of protruding structures.一4*d W formed a concave-convex surface. Then, please further step, in the protrusion structure called the vertical wall _^ " Ming again refer to step S25, forming a -electrode 113 on the patterned transparent electrode layer 117, The first electrode 113 is electrically connected to 117, and an m-snow branch is formed, and the electrode 115 is electrically connected to the light-emitting unit 1〇4 (please

照步驟S26)，以完成如第！圖所繪示的結構。 &弟/圖係根據本發明的第三較佳實施例所繪示的一種固恶發光元件300的結構剖面圖。固態發光元件300包括:金屬基板315、發光單元304、反光層311、透明電極層317以及第一電極η)。盔光早兀304係疊設於製作有電路圖案（未繪示）的金屬之表面，且發光單元3〇4之外表具有複數個突起結構304a，使其形成一凹凸表面。在本务明的第三較佳實施例之中，發光單元3〇4係一種發光^極體元件。此—發光二極體元件包含有-種由同質結 :、早異質結構、雙異質結構或多重量子井所組成的磊晶結構。形成磊晶結構之材料可為磷化鋁銦鎵（AiGdnp)系列之半導體材質，或為氮化鎵（GaN)系列之半導體材質。在本實施例之中，磊晶結構係一種依序堆疊於金屬基板 315上的P型包覆層3〇1、主動層303、以及N型包覆層3〇9。其中N型包覆層309係表面具有複數個突起結構3〇乜的圖案化層。在本發明的—些實施例之中，複數個突起結構3〇4a係 11 200822392 由複數個立方體、圓柱體或截去尖端的倒金字塔形凸起所組成。但此圖案化層較佳係為一種光子晶體結構，其中複數個突起結構304a具有週期性排列的折射係數（介電常數）。反光層311係設於突起結構3〇4a的立壁3〇4b表面。在本發明的實施例之中，反光層311係一種覆蓋於突起結構3〇乜的立壁304b表面的金屬層。然而在本發明的其它實施例之中，反光層311也可以由其他具有高反光特性的非金屬材質所組成。、透明電極層317係覆蓋於突起結構3〇4a之上端面。在本實施例之中，透明電極層317係形成於包覆層3〇9之突起結構304a上端面。第一電極313則係位於透明電極層μ? 上並與電性透明電極層317接觸。當第一電極313及金屬基板315藉由發光單元3〇4而相互導通時，發光單元304所產生之光線’若非平行立壁3〇仆，會被反光層3 11反射而返回發光單元3〇4，再經過至少一次反射之後再以平行立壁304b的方向向外界射出。凊爹照第4圖，第4圖係繪示形成第3圖之固態發光元件的製造流程圖。製造第3圖之固態發光元件包括下驟T 首先請參照步驟S41，提供一暫時基板（未繪示）；再形成一發光單元304疊設於暫時基板之表面。請再參照步驟su，接合一金屬基板320於發光單元304相對於暫時基板 _ 側’再移除暫時基板。接著請參照步驟S43，形成一透明電極層317覆蓋於發光單元304因移除暫時基板所暴露出來之j 側。請再參照步驟S44，圖案化透明電極層3丨7和發光單元 12 200822392 3一04 ,使發光單元3(M具有由複數個突起結構綱a所形成的、面。之後請再參照步驟S45，於突起結構3 壁3_表面形成-反光層311。請再參照步驟州，於圖案电枝層317上形成一第一電極313，使第一電極3 性連結於透明電極層317，以完成如第3圖所繪示的結構。根據以上所述之較佳實施例’本發明的特徵係採用層塗佈於固態發光元件之發光單元突起結構的立壁上。藉由反先層來限制非平行於立壁的光線由發光元件射出。使非平 ==壁的域經由反光層之反射先返回發光元件，經過折後再以平行立壁的方向向外界射出，以增加非平行於立辟 ::的光子出射數量，減少光子進入具有低折射係數之空： "為的機率，以增進固態發光元件的光取出率。提本發明所提供的固態發光元件並不需要大幅 ^固恶發光元件的製程精度，再加上反光層係一金屬層， :有效降低驅㈣壓，並且增加㈣表面積後可以降低電流岔度，提高操作電流。1 此本發明所提供的固態發光元件具有高光取出率、製 :呈間早、低驅動電壓等技術優勢’可以解決習之技術爲提：先取出率而必須大幅提高製程精度與成本的問豸。並可夢由降低’流經幾何圖案的電流密度，解決習知固態發光元；因幾何圖案所引起之驅動電屡過高而燒毀的問題。雖然本發明已以上述較佳實施例揭露如上，然其並非用以限定本發明’任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍内’當可作各種之更動與潤 13 200822392 此本發明之保護範圍準。視後附之申請專利範圍所界定者為【圖式簡單說明】根據以上所述之較佳實施例，者當能對本發明之目的、特徵、和值得注意的是，為了清楚描述起見未按照比例尺加以纟會示。Follow step S26) to complete as the first! The structure shown in the figure. &Digital/FIG. is a cross-sectional view showing the structure of a solid-state light-emitting element 300 according to a third preferred embodiment of the present invention. The solid state light emitting device 300 includes a metal substrate 315, a light emitting unit 304, a light reflecting layer 311, a transparent electrode layer 317, and a first electrode η). The helmet light is stacked on the surface of the metal on which the circuit pattern (not shown) is formed, and the light-emitting unit 3〇4 has a plurality of protrusion structures 304a to form a concave-convex surface. In a third preferred embodiment of the present invention, the light-emitting unit 3〇4 is a light-emitting body element. The light-emitting diode element comprises an epitaxial structure consisting of a homojunction, an early heterostructure, a double heterostructure or a multiple quantum well. The material forming the epitaxial structure may be a semiconductor material of the aluminum indium phosphide (AiGdnp) series or a semiconductor material of a gallium nitride (GaN) series. In the present embodiment, the epitaxial structure is a P-type cladding layer 3, an active layer 303, and an N-type cladding layer 3〇9 which are sequentially stacked on the metal substrate 315. The N-type cladding layer 309 is a patterned layer having a plurality of protrusion structures 3〇乜 on its surface. In some embodiments of the invention, the plurality of raised structures 3〇4a are 11 200822392 comprised of a plurality of cubes, cylinders or inverted pyramid-shaped projections with truncated tips. However, the patterned layer is preferably a photonic crystal structure in which a plurality of protrusion structures 304a have periodic refractive indices (dielectric constants). The light reflecting layer 311 is provided on the surface of the standing wall 3〇4b of the protruding structure 3〇4a. In the embodiment of the present invention, the light reflecting layer 311 is a metal layer covering the surface of the standing wall 304b of the protruding structure 3''. However, in other embodiments of the invention, the light reflecting layer 311 may also be composed of other non-metallic materials having high light reflecting properties. The transparent electrode layer 317 is covered on the upper end surface of the protrusion structure 3〇4a. In the present embodiment, the transparent electrode layer 317 is formed on the upper end surface of the protruding structure 304a of the cladding layer 3〇9. The first electrode 313 is located on the transparent electrode layer μ? and is in contact with the electrically transparent electrode layer 317. When the first electrode 313 and the metal substrate 315 are electrically connected to each other by the light-emitting unit 3〇4, the light generated by the light-emitting unit 304 will be reflected by the light-reflecting layer 3 11 and returned to the light-emitting unit 3〇4 if it is not parallel to the vertical wall 3. And after at least one reflection, it is emitted to the outside in the direction of the parallel vertical wall 304b. Referring to Fig. 4, Fig. 4 is a flow chart showing the manufacture of the solid state light emitting device forming Fig. 3. The solid-state light-emitting element of the third embodiment is manufactured to include a lower step T. First, referring to step S41, a temporary substrate (not shown) is provided; and a light-emitting unit 304 is further formed on the surface of the temporary substrate. Referring to step su again, a metal substrate 320 is bonded to the light-emitting unit 304 to remove the temporary substrate with respect to the temporary substrate _ side. Next, referring to step S43, a transparent electrode layer 317 is formed to cover the j side of the light emitting unit 304 exposed by the removal of the temporary substrate. Referring to step S44, the transparent electrode layer 3丨7 and the light-emitting unit 12200822392 3 to 04 are patterned to make the light-emitting unit 3 (M have a surface formed by a plurality of protrusion structures a. Then, refer to step S45. Forming a reflective layer 311 on the surface of the wall 3_ of the protrusion structure 3. Referring to the step state, a first electrode 313 is formed on the pattern electrode layer 317, and the first electrode is three-folded to the transparent electrode layer 317 to complete The structure illustrated in Fig. 3. According to the preferred embodiment described above, the feature of the present invention is to apply a layer on the vertical wall of the light-emitting unit protrusion structure of the solid-state light-emitting element. The anti-parallel is used to limit the non-parallel The light of the vertical wall is emitted by the light-emitting element, so that the non-flat == wall domain is first returned to the light-emitting element via the reflection of the light-reflecting layer, and then folded and then emitted to the outside in the direction of the parallel vertical wall to increase non-parallelism to the vertical: The number of photons emitted, reducing the photon entering the space with a low refractive index: " is the probability to improve the light extraction rate of the solid state light-emitting element. The solid-state light-emitting element provided by the present invention does not need to substantially eliminate the illuminating element The process precision of the part, together with the reflective layer is a metal layer, which effectively reduces the driving voltage, and increases the (iv) surface area to reduce the current concentration and increase the operating current. 1 The solid-state light-emitting element provided by the invention has high-light extraction Rate, system: technology advantages such as early, low driving voltage, 'can solve the technology of the study: first take out the rate and must greatly improve the accuracy and cost of the process. And dream of reducing the current flowing through the geometric pattern Density, solving the problem of the conventional solid-state illuminating element; the driving power caused by the geometric pattern is excessively high and burned. Although the present invention has been disclosed above in the above preferred embodiments, it is not intended to limit the present invention. Those skilled in the art will be able to make various changes and modifications without departing from the spirit and scope of the invention. The scope of protection of the present invention is as defined in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS In light of the above-described preferred embodiments, it is intended that the objects, features, and See Si will not be shown according to scale.

圖式簡單說明如下：第1A圖係根據本發明的筐 ^ χ 3的弟較佳實施例所繪示的一種固恶發光元件100的結構剖面圖。第1B圖係根據本發明的筮— 月的弟一較佳實施例所繪示的一種固悲發光元件100的結構剖面圖。第2圖係繪示形成第〗a闰士》风弟1A圇或第1B圖之固態發光元件的製造流程圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a cross-sectional view showing the structure of a solid-state light-emitting element 100 according to a preferred embodiment of the basket of the present invention. Fig. 1B is a cross-sectional view showing the structure of a solid-state light-emitting element 100 according to a preferred embodiment of the present invention. Fig. 2 is a flow chart showing the manufacture of a solid-state light-emitting element forming the first gentleman 1A or 1B.

並配合所附圖式說明，讀優點有更深入的理解。但 ’本說明書所附之圖式並第一3圖係根據本發明的第三較佳實施例所繪示的一種固態發光元件300的結構剖面圖。第4圖係繪示形成第3圖之固態發光元件的製造流程圖。【主要元件符號說明】 12L基板 i〇3 :主動層 104a :突起結構 100 :固態發光元件 101 : N型包覆層 10 4 :發光單元 104b :立壁 14 200822392 109 : P型包覆層 U1 :反光層 11 5 :第二電極 117 :透明電極層 3 00 :固態發光元件 320 :基板 301 ·· P型包覆層 303 :主動層 304 :發光單元 304a :突起結構 304b :立壁 309 : N型包覆層 311 :反光層 3 13 :第一電極 3 1 5 :金屬基板 3 17 :透明電極層步驟S21 :提供一基板；再形成發光單元面0 113 :第一電極步驟S22:於發光單元之上端面形成_透明電極層。步驟S23 :圖案化透明電極層和發光單元，使發光單元呈有由複數個突起結構所形成的一凹凸表面。 ^ 凡^、步驟S24:於突起結構的立壁1〇仆表面形成反光層。步驟S25:於圖案化的透明電極上形成第_電極⑴。步驟S26 ·形成一第二電極，電性連接發光單元。步驟S 41 ·長：供暫時基板；再形成發.一九早凡豐設於暫時基攸之表面。步驟sm合金屬基板於發光單元相對於暫時基板之一側’再移除暫時基板。步驟S43 :形成透明電極層覆蓋於於朵妃^号復蓋及^九早兀因移除暫時基板所暴露出來之一側。步驟S44 ··圖案化透明電極層和發夯罝塔和^九早兀，使發光單元 15 200822392 304具有由複數個突起結構304a所形成的凹ί 步驟S45 :於突起結構的立壁表面形成一步驟S46 :於圖案化透明電極層上形成第 7表面。反光層。一電極。With the description of the drawings, the advantages of reading have a deeper understanding. However, the drawings attached to the present specification and the first three drawings are structural cross-sectional views of a solid state light emitting device 300 according to a third preferred embodiment of the present invention. Fig. 4 is a flow chart showing the manufacture of the solid state light emitting device of Fig. 3. [Description of main component symbols] 12L substrate i〇3: Active layer 104a: Projection structure 100: Solid-state light-emitting element 101: N-type cladding layer 10 4: Light-emitting unit 104b: Vertical wall 14 200822392 109 : P-type cladding layer U1: Reflective Layer 11 5 : second electrode 117 : transparent electrode layer 3 00 : solid state light emitting element 320 : substrate 301 · P type cladding layer 303 : active layer 304 : light emitting unit 304 a : protruding structure 304 b : vertical wall 309 : N type cladding Layer 311: light-reflecting layer 3 13 : first electrode 3 1 5 : metal substrate 3 17 : transparent electrode layer step S21 : providing a substrate; forming a light-emitting unit surface 0 113 : first electrode step S22 : at the upper end surface of the light-emitting unit A transparent electrode layer is formed. Step S23: patterning the transparent electrode layer and the light emitting unit such that the light emitting unit has a concave-convex surface formed by a plurality of protruding structures. ^ 凡^, step S24: forming a reflective layer on the surface of the standing wall of the protruding structure. Step S25: forming a first electrode (1) on the patterned transparent electrode. Step S26: forming a second electrode electrically connected to the light emitting unit. Step S 41 · Long: for the temporary substrate; re-formed the hair. The nine-year-old is located on the surface of the temporary base. The step sm is combined with the metal substrate to remove the temporary substrate from the side of the light emitting unit with respect to the temporary substrate. Step S43: forming a transparent electrode layer covering one side of the exposed substrate and removing the temporary substrate. Step S44 · patterning the transparent electrode layer and the hairpin tower and the light-emitting tower, so that the light-emitting unit 15 200822392 304 has a concave formed by the plurality of protrusion structures 304a. Step S45: forming a step on the vertical wall surface of the protrusion structure S46: forming a seventh surface on the patterned transparent electrode layer. Reflective layer. An electrode.

1616

Claims

200822392 十、申請專利範圍 .…·ν·- ·ί·«··>：···— · ^ ^ 1 · 一種固態發光元件，包括：一基板；面，且該發光單元使其為一凹凸表舍光單元’係豐設於該基板之表之外表面具有複數個突起結構面；一反光層’㈣於該等突起結構的複數個立壁表面一透明電極層’係覆蓋於該等突起結構之上端面； -電極，係電性連結於該透明電極層；以及一第二電極，係電性連接於該發光單元；藉此’當該第-電極及該第二電極導通，使該發光單元辱光時，由該發光單元所射出之非平行該些立壁的3 線係可經由該反光層之反射後，向外界射·出。 _ 2.如巾#專利範圍第1項所述之固態發光it件，其中該固態、發光元件係為-發光二極體（Light Emiuing心心； LED) °亥叙光單元係為一磊晶結構，該等突起結構係由該蠢晶結構之P型包覆層所形成。 3. 如申請專利範圍第丨項所述之固態發光元件，該等突起結構係為光子晶體結構呈週期性排列。 4. 如申請專利範圍第1項所述之固態發光元件，該等突起 17 200822392 結構係為準光子晶體結構呈非週期性排列。 5·如申請專利範圍第1項所述之固態發光元件，該第一電極係設於該等突起結構其中之一者上。 6 ·如申凊專利範圍第1項所述之固態發光元件，該弟一電極係設於該等突起結構以外的位置。 7·如申請專利範圍第1項所述之固態發光元件，其中該第一電極係與該第二電極係位於該發光元件的相同兩側’並藉由該發光元件彼此導通。 8 ·如申請專利範圍第1項所述之固態發光元件，其中該反光層係選自於高反射係數之材料可為金、鋁、鉑、鎳、錫以及銀所組成之一族群。 9·如申請專利範圍第}項所述之固態發光元件，其中該透明電極層之材料係選自於由氧化銦錫（IT〇)、氧化銦 (Ιη203) '氧化錫（Sn〇2)、氧化鋅（Ζη〇)以及氧化鎂 (MgO)所組成之一族群。 10 · —種固態發光元件，包括：一金屬基板，係製作有電路圖案；一發光單元，係疊設於該金屬基板之表面，且該發光 18 200822392 單元之外表面具有複數個突起結構，使其為一凹凸表面；一反光層，係設於該等突起結構的複數個立壁表面；一透明電極層，係覆蓋於該等突起結構之上端面；以及一第一電極，係電性連結於該透明電極層；藉此’當該金屬基板與該第一電極導通，使該發光單元發光時’由該發光單元所射出之非平行於該些立壁的光線係可經由該反光層之反射後，向外界射出。 1 1 ·如申請專利範圍第1 〇項所述之固態發光元件，其中該金屬基板係選自於鋁、銀、鉑等高反射係數之金屬材料其中一種所製成。 12 ·如申請專利範圍第1 〇項所述之固態發光元件，其中該固悲务光元件係為一發光二極體（Light Emitting diode ; LED)，該發光單元係為一磊晶結構，該等突起結構係由該磊晶結構之N型包覆層所形成。 13·如申請專利範圍第1〇項所述之固態發光元件，該等突起結構係為光子晶體結構呈週期性排列。 14.如申請專利範圍第ι〇項所述之固態發光元件，該等突起結構係為準光子晶體結構呈非週期性排列。 19 200822392 15·如申請專利範圍第ι〇項所述之固態發光元件，該第一電極係設於該等突起結構其中之一者上。 16·如申請專利範圍第1〇項所述之固態發光元件，該第一電極係設於該等突起結構以外的位置。 17·如申請專利範圍第1〇項所述之固態發光元件，其中該反光層係選自於高反射係數之材料係選自於由金、鋁、翻、鎳、錫以及銀所組成之一族群。 18·如申明專利範圍第1〇項所述之固態發光元件，其中該透月電極層之材料係選自於由氧化銦錫（ιτ〇)、氧化钔（Ιη2〇3)、氧化錫（Sn〇2)、氧化鋅（ho)以及氧化鎂（MgO)所組成之一族群。 19. 一種固態發光元件之製造方法，包括：提供一基板；形成一發光單元疊設於該基板之表面；形成-透明電極層，係覆蓋於該發光單元之上端面，圖案化該透明電極層和該發光單元’使該發光單元具有由複數個突起绪構所形成的一凹凸表面· 形成一反光層，係設於該等突起結構的:壁表面；於該圖案化透明電極層上形成一乐電極，使該第一電極 20 200822392 與該圖案化透明電極層電性接觸；以及形成一第二電極，電性連接於該發光單元。 20.—種固態發光元件之製造方法，包括：提供一暫時基板；發光單元’係疊設於該暫時基板之表面；一側；忒么先早兀相對於該暫時基板之移除該暫時基板；形成-透明電㈣，覆蓋於該發光單元所暴露出來之一側；于…亥暫日守基板圖案化該透明電極層與該發光單元，使複數個突起結構所形成的-凹凸表面: 八有由於:Γ;=，設於該等突起結構的立壁表面;以及亥圖案化透明電極層上形成-第-電極，使該第一二t 與该圖案化透明電極層電性接觸。 x ® ° 21200822392 X. Patent application scope....·ν·-·ί·«··>:····· ^ ^ 1 · A solid-state light-emitting element comprising: a substrate; a surface, and the light-emitting unit makes it a The surface of the surface of the substrate has a plurality of protruding structural surfaces; a reflective layer '(4) is over the plurality of vertical wall surfaces of the protruding structures, and a transparent electrode layer is attached to the protrusions An upper surface of the structure; an electrode electrically connected to the transparent electrode layer; and a second electrode electrically connected to the light emitting unit; thereby: when the first electrode and the second electrode are turned on, When the light-emitting unit is humiliating, the three-wire system of the non-parallel vertical walls emitted by the light-emitting unit can be reflected and reflected by the light-reflecting layer, and then emitted to the outside. _ 2. The solid-state light-emitting device according to the first aspect of the invention, wherein the solid-state light-emitting element is a light-emitting diode (Light Emiuing core; LED). The light-emitting unit is an epitaxial structure. The protrusion structures are formed by a P-type cladding layer of the dormant structure. 3. The solid state light-emitting element according to claim 2, wherein the protruding structures are periodically arranged in a photonic crystal structure. 4. The solid state light-emitting device of claim 1, wherein the protrusions 17 200822392 are in a non-periodic arrangement of quasi-photonic crystal structures. 5. The solid state light emitting device of claim 1, wherein the first electrode is disposed on one of the protruding structures. 6. The solid-state light-emitting device according to claim 1, wherein the first electrode is disposed at a position other than the protruding structures. The solid-state light-emitting device according to claim 1, wherein the first electrode system and the second electrode are located on the same two sides of the light-emitting element and are electrically connected to each other by the light-emitting element. 8. The solid state light-emitting device according to claim 1, wherein the light-reflecting layer is selected from the group consisting of gold, aluminum, platinum, nickel, tin, and silver. The solid-state light-emitting device of claim 1, wherein the material of the transparent electrode layer is selected from the group consisting of indium tin oxide (IT〇), indium oxide (Ιη203), tin oxide (Sn〇2), A group consisting of zinc oxide (Ζη〇) and magnesium oxide (MgO). A solid-state light-emitting element comprising: a metal substrate, which is formed with a circuit pattern; an illumination unit stacked on a surface of the metal substrate, and the surface of the light-emitting layer 18200822392 has a plurality of protrusion structures, a reflective surface; a reflective layer disposed on the plurality of vertical wall surfaces of the protruding structures; a transparent electrode layer covering the upper end surfaces of the protruding structures; and a first electrode electrically coupled to The transparent electrode layer; wherein when the metal substrate is electrically connected to the first electrode to cause the light emitting unit to emit light, the light emitted by the light emitting unit and not parallel to the vertical walls can be reflected by the reflective layer , shot to the outside world. The solid-state light-emitting element according to claim 1, wherein the metal substrate is selected from one of a metal material having a high reflection coefficient such as aluminum, silver or platinum. The solid-state light-emitting device of claim 1, wherein the solid light-emitting element is a light-emitting diode (LED), and the light-emitting unit is an epitaxial structure. The protrusion structure is formed by the N-type cladding layer of the epitaxial structure. 13. The solid state light-emitting device of claim 1, wherein the protruding structures are periodically arranged in a photonic crystal structure. 14. The solid state light-emitting element of claim 1 , wherein the raised structures are non-periodically arranged in a quasi-photonic crystal structure. The solid-state light-emitting element of claim 1, wherein the first electrode is disposed on one of the protruding structures. The solid-state light-emitting device according to the first aspect of the invention, wherein the first electrode is disposed at a position other than the protruding structures. The solid-state light-emitting device of claim 1, wherein the light-reflecting layer is selected from the group consisting of gold, aluminum, tumbling, nickel, tin, and silver. Ethnic group. The solid-state light-emitting device according to claim 1, wherein the material of the moon-transparent electrode layer is selected from the group consisting of indium tin oxide (ITO), yttrium oxide (Ιη〇3〇3), and tin oxide (Sn). 〇 2), a group of zinc oxide (ho) and magnesium oxide (MgO). A method of manufacturing a solid-state light-emitting device, comprising: providing a substrate; forming a light-emitting unit stacked on a surface of the substrate; forming a transparent electrode layer covering the upper end surface of the light-emitting unit, and patterning the transparent electrode layer And the light-emitting unit 'having the light-emitting unit having a concave-convex surface formed by a plurality of protrusions, forming a light-reflecting layer, disposed on a wall surface of the protrusion structure; forming a layer on the patterned transparent electrode layer The first electrode 20 200822392 is in electrical contact with the patterned transparent electrode layer; and a second electrode is electrically connected to the light emitting unit. 20. A method of fabricating a solid-state light-emitting device, comprising: providing a temporary substrate; a light-emitting unit' is superposed on a surface of the temporary substrate; and one side; first removing the temporary substrate relative to the temporary substrate Forming-transparent electricity (4) covering one side of the exposed light-emitting unit; patterning the transparent electrode layer and the light-emitting unit on the substrate to form a concave-convex surface formed by a plurality of protruding structures: The first electrode is electrically connected to the patterned transparent electrode layer by: Γ;=, disposed on the vertical wall surface of the protruding structure; and forming a first electrode on the patterned transparent electrode layer. x ® ° 21