TW200813407A - Vibrational wave detection method, and vibrational wave detector - Google Patents
Vibrational wave detection method, and vibrational wave detector Download PDFInfo
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- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
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Abstract
Description
200813407 九、發明說明： 【發明所屬之技術領域】 本發明關於振動波檢測方法及裝置，該振動波檢測方法 使用共振頻率不同之複數個共振器對振動波之各頻帶之強 度進行電性檢測。 【先前技術】 有如下共振器陣列型振動感測器，其排列共振頻率不同 ，禝數個共振器，使各共振器以特定之共振頻率對於聲波 等振動波選擇性地應答並共振，且將該各共振器之共振位 準轉換為電性信號後輸出，並對振動波之各頻帶之強度進 行檢測（例如，非專利文獻丨或者非專利文獻2)。 先丽之振動感測器中，於共振器之支持部附近形成壓致 電阻（pieZoresistance)，藉由惠斯登電橋等對因共振器之振 動（共振）而引起之壓致電阻之電阻值的變化進行檢測，並 2共振器輸出電性輸出信號。尤其於非專利文獻2之感測 器中 面藉由多工器切換各共振器之惠斯登電橋輸出， 一面獲得輸出信號。 提出有藉由共振器陣列型之簡易電路構成，而控制輸入 2動波之特疋頻帶之增益的方法（專利文獻丨或專利文獻 2)。。例如專利文獻丨之技術中，於共振器陣列型之振動感 測器中，使各共振樑中所設定之各壓致電阻並聯連接。藉 由改變施加至該並聯電路之電源電壓，或者，改變壓致電 阻之形狀而改變電阻值，可控制特定頻帶之增益。 專利文獻2之技術中，利用畸變之大小與共振樑之 120994.doc 200813407 位置相應而不同，對各共振樑中設定壓致電阻的位置進行. 調整，以使各頻帶之輸出信號之位準達到所希望之位準， 從而控制特定頻帶之增益。 非專利文獻 1 : W. Benecke et al·，”A Frequency-Selective， Piezoresistive Silicon Vibration Sensor，" Digest of * Technical Papers of TRANSDUCERSf85 5 pp.105-108 (1985) “ 非專利文獻 2 : E. Peeters et al·，"Vibration SignatureBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vibration wave detecting method and apparatus for electrically detecting the intensity of each frequency band of a vibration wave using a plurality of resonators having different resonance frequencies. [Prior Art] There is a resonator array type vibration sensor having a different resonance frequency and a plurality of resonators, so that each resonator selectively responds to and resonates with a vibration wave such as a sound wave at a specific resonance frequency, and The resonance levels of the resonators are converted into electrical signals and output, and the intensity of each frequency band of the vibration waves is detected (for example, Non-Patent Document 2 or Non-Patent Document 2). In the vibration sensor of the front, a piezoresistance is formed in the vicinity of the support portion of the resonator, and the resistance value of the piezoresistance caused by the vibration (resonance) of the resonator by the Wheatstone bridge or the like is obtained. The change is detected and the 2 resonator outputs an electrical output signal. In particular, in the sensor of Non-Patent Document 2, the output of the Wheatstone bridge of each resonator is switched by the multiplexer, and an output signal is obtained. A method of controlling the gain of the characteristic band of the input motion wave by the simple circuit configuration of the resonator array type is proposed (Patent Document 2 or Patent Document 2). . For example, in the technique of the patent document, in the resonator array type vibration sensor, the respective piezoresistive resistors set in the respective resonant beams are connected in parallel. The gain of a particular frequency band can be controlled by varying the supply voltage applied to the parallel circuit, or by changing the shape of the voltage-resistance to change the resistance value. In the technique of Patent Document 2, the magnitude of the distortion is different from the position of the resonant beam of 120994.doc 200813407, and the position of the piezoelectric resistor in each resonant beam is adjusted to adjust the level of the output signal of each frequency band. The desired level is controlled to control the gain of a particular frequency band. Non-Patent Document 1: W. Benecke et al., "A Frequency-Selective, Piezoresistive Silicon Vibration Sensor," Digest of * Technical Papers of TRANSDUCERSf85 5 pp. 105-108 (1985) "Non-Patent Document 2: E. Peeters Et al·,"Vibration Signature
Analysis Sensors for Predictive Diagnostics，’’ Proceedings • of SPIE，97, vol· 3224, pp· 220-230 (1997) 專利文獻1:日本專利特開2000-46639號公報 專利文獻2:日本專利特開2000-46640號公報 【發明内容】 [發明所欲解決之問題] 關於對振動現象或聲響信號進行處理方面，將信號表現 為複數，可進行振幅/相位之瞬時檢測或信號之解調變等 0 各種解析或轉換。以麥克風為首之先前之聲響/振動感測 器，係將各時刻之聲壓等物理量轉換為電性信號之裝置， 輸出係單一之即時信號。一般而言，為了將即時信號轉換 β 為所對應之複數信號，必須進行下述被稱作希爾伯特轉換 之運算。該運算為非因果，無法對寬頻帶信號即時進行該 運算。因此，對於信號之複數表現之可實際運用而言，限 於如於通信領域中進行處理般之窄頻帶信號。 解析函數之實部與虛部之間，一般存在如下之希爾伯特 轉換之關係（日本數學會編輯，岩波數學辭典第3版 120994.doc 200813407 (1985) ， 520頁）。 於複變數Z=X+jy之上半平面（7^〇)上，於正則函數 φ(ζ)=υ(χ > y)+jV(x , y) 之實軸上之邊界值 f(x)=U(x、〇)、g(x)=_v(x、〇) 之間，f、g為實數上之可積分之函數（f、、①》 時，存在如下 [數1] g(x) =去 p.v.£[(-'+t)dt f(x) =丄 ρ.ν.ΓίίΞ±4 ⑴ π S(X> t 之關係。此處ρ·ν·係表示Cauchy之主值 [數2] p.v.£F(t)dt = AJ]m^〇(f；F(t)dt = J；F(t)dt) (2) 之含義。 將g稱作f之希爾伯特轉換（Hilbert transform)，將填g稱 作希爾伯特轉換對。希爾伯特轉換係連接解析函數之實部 與虛部之函數。 對於物理現象、尤其振動現象而言，於複數平面上解析 則較為便利。一般而言，振動現象中，藉由歐拉公式 eje=c〇se+jsin0，實部與虛部存在一者為另一者之微分之關 係。例如，相對於變位或速度，存在速度或加速度之關 係。為了根據瞬時值把握現象，僅知道存在其等之關係之 120994.doc 200813407 必須知道兩者（例如變位 一者之資訊（例如變位）並不充分 與速度）。 、邛與虛邛之關係成為希爾伯特轉換 g或者f之式可導出另一者，如】 文错由上迷 之區間之積分，必須對某期間(週期函數中至:二(週:、… 行觀測。先前之振動波檢測裝置中，僅可檢測_者= :把握若：瞬時值檢測實部與虛部兩者之資訊‘Analysis Sensors for Predictive Diagnostics, ''Proceedings • of SPIE, 97, vol. 3224, pp. 220-230 (1997) Patent Document 1: Japanese Patent Laid-Open No. 2000-46639 Patent Document 2: Japanese Patent Laid-Open No. 2000- In the case of processing a vibration phenomenon or an acoustic signal, the signal is expressed as a complex number, and the amplitude/phase instantaneous detection or signal demodulation can be performed. Or conversion. The previous sound/vibration sensor, which is headed by a microphone, is a device that converts physical quantities such as sound pressure at various times into electrical signals, and the output is a single instant signal. In general, in order to convert the instantaneous signal β to the corresponding complex signal, the following operation called Hilbert conversion must be performed. This operation is non-causal and cannot be performed on the wideband signal immediately. Therefore, for the practical use of the complex representation of the signal, it is limited to narrow-band signals as processed in the communication field. Between the real and imaginary parts of the analytic function, there is generally a relationship between the following Hilbert transformations (edited by the Japanese Mathematical Society, Rock Wave Mathematical Dictionary, 3rd Edition, 120994.doc 200813407 (1985), p. 520). On the semi-plane (7^〇) above the complex variable Z=X+jy, the boundary value f on the real axis of the regular function φ(ζ)=υ(χ > y)+jV(x , y) When x)=U(x,〇), g(x)=_v(x,〇), f and g are functions of integrals (f,, 1) on real numbers, there are the following [number 1] g (x) = go to pv£[(-'+t)dt f(x) =丄ρ.ν.ΓίίΞ±4 (1) π S(X> t relationship. Here ρ·ν· is the main value of Cauchy [Equation 2] pv£F(t)dt = AJ]m^〇(f;F(t)dt = J;F(t)dt) (2) The meaning of g is called Hilbert of f Hilbert transform, which is called the Hilbert transform pair. The Hilbert transform is a function that connects the real and imaginary parts of the analytic function. For physical phenomena, especially vibration phenomena, on the complex plane Analysis is more convenient. Generally speaking, in the vibration phenomenon, by Euler's formula eje=c〇se+jsin0, there is a difference between the real part and the imaginary part as the other. For example, relative to the displacement or Speed, there is a relationship between speed or acceleration. In order to grasp the phenomenon according to the instantaneous value, only know the existence of the relationship between the 120994.doc 200813407 Both of the roads (for example, the information of the one (such as the displacement) is not sufficient and the speed). The relationship between the 邛 and the imaginary becomes the Hilbert transform g or f can be derived from the other, such as The error is determined by the upper limit of the interval, which must be for a certain period (the periodic function is up to: two (week:, ... line observation. In the previous vibration wave detection device, only detectable _ == grasp if: instantaneous value detection Information on both the ministry and the imaginary department'
:如，如專利文獻！所示般，#由與共振樑之共振頻率 ==τ器之偏㈣賦予，則實現可動態變 制^ “而切之方法中，振動波檢測之負载限 制為正負之J，無法_實現任意之脈 複數負載。 叮而要之 本發明係蓥於上述情關發而成者，其目的在於提供一 種可賦予任意之複數負載之振動波檢測方法及裝置。 [解決問題之技術手段] 本發明之第1觀點之振動波檢測方法，其特徵在於：其 係將振動波傳播於各自與不同之特定頻率共振之複數個共 振器，以設在各上述共振器之檢測器檢測伴隨由各上述共 振器之上述頻率而產生之共振的電性輸出者，且 a以上述複數個共振器之檢測器#通之頻率將相位不同之 父流偏壓電壓施加至各共振器； 合成上述複數個共振器之檢測器之輸出。 再者，於施加該交流偏壓電壓之上述複數個共振器中的 120994.doc 200813407 至少1個共振器，上述交流偏壓電壓之振幅不同。 、尤其，將上述複數個共振器分為複數個群，針對該各 ，將具有共通之振幅與相位之上述交流偏壓電壓施加至 各群所包含之共振器。 八車又好的疋，以濾波器抽出上述複數個共振器之檢測器所 成之輪出的上旁波帶，藉由正交相關檢測輸出希爾伯特 轉換對之信號。 人再者亦可利用無線電將上述複數個共振器之檢測器所 合成之輸出傳送至上述濾波器。 X月之弟2觀點之振動波檢測裝置的特徵在於包括： 複數個共振器，其等各自與不同之特定頻率共振； 才双測斋，其檢測伴隨由傳播於上述複數個共振器之振動 皮而產生之各上述共振器在上述頻率之共振的電性輸出， 且設在上述複數個共振器各個中； 偏壓轭加機構，其以設在上述複數個共振器各個中之檢 測叩共通之頻率將相位不同之交流偏壓電壓施加至各上述 共振器；及 輸出合成機構，其合成設在上述複數個共振器各個中之 檢測器之輸出。 再者’以上述偏壓施加機構施加之上述交流偏壓電壓於 上述複數個共振器中的至少1個共振器，具有不同之振 幅。 尤其’上述偏壓施加機構將上述複數個共振器分為群， 針對遠各群’將共通之振幅與相位之交流偏壓電壓施加至 120994.doc -10- 200813407 各群之共振器。 較好的是包括： 濾、波機構，其自以上述輸出合成機構合成之檢測器的輸 出之合成輸出，對上旁波帶進行濾波後抽出，上述檢測器 4在上述複數個共振器各個中；及 正交檢波機構，其對以上述濾波機構抽出之上旁波帶進 行正父相關檢測，並輸出希爾伯特轉換對之信號。 _ •再者，亦可包括無線傳送機構，其利用無線電將以上述 輪出&成機構合成之檢測器之輸出的合成輸出傳送至上述 ;慮波機構，上述檢測器設在上述複數個共振器各個中。 車父好的是’上述檢測器係壓致電阻。 又’上述檢測器亦可係電容性之元件。 [發明之效果] 根據本發明之振動波檢測方法及振動波檢測裝置，可實 、4 ^之複數負載。並且，增加任意之複合頻率特性可作 • 為具有實部與虛部之2自由度的RF (Radio FreqUency，射 頻）調變信號而讀出、傳送。 【實施方式】 ， 以下，一面參照圖式一面詳細說明本發明之實施形態。 。 #者，對圖中相同或者相當部分附上相同符號，其說明不 再重複。以下，以將檢測對象之振動波作為聲波之聲響感 測器為例加以說明。 圖1係表示本發明之振動波檢測裝置之感測器本體之一 例的圖。形成於半導體石夕基板2〇上之感測器本❸包括： 120994.doc 200813407 接又輸入聲波之膜片2;與膜片2連接之1個橫樑3 ;與橫樑 3之前端連接之終止板4，·以及於橫樑3之兩侧，受到一側 支持之複數（η個）個共振樑51a、51b〜5na、5nb(以下，總稱 為共振樑5)，該等所有部分由半導體矽而形成。橫樑3之 兩側之共振樑5具有相同之共振頻率，以相對向為丨對，形 成有η組之共振樑5。 ^實施形態中，為了使數學處理變得簡單而容易理解， ^橫樑3之兩側，使具有相同共振頻率之共振樑成對地配 =。即使共振樑5僅配置於橫樑之一側，亦可獲得相同之 、、、4。然而，此時，感測器之靈敏度為1/2。 二黃:梁3之寬度於膜片2端為最粗’自膜片^開始隨著向 :板_而逐漸變細，且於終錢4端為最細 振樑5為共振器， 人各共 到了調整。 ，、振…-頻率共振的方式長度得 選 β等複數個共振樑5以下述（3)式所表示之 擇性地應答振動。 ，、振頻率f而 [數3] f: For example, as patent documents! As shown, # is given by the resonance frequency of the resonant beam == τ (4), then the dynamic variable can be realized. In the method of cutting, the load of the vibration wave detection is limited to positive and negative J, which cannot be realized. The present invention is directed to the above-mentioned circumstances, and an object thereof is to provide a vibration wave detecting method and apparatus capable of imparting an arbitrary complex load. [Technical means for solving the problem] The present invention The vibration wave detecting method according to the first aspect is characterized in that the vibration wave is propagated to a plurality of resonators each resonating with a different specific frequency, and the detectors provided in the respective resonators are detected by the respective resonances. An electrical output of the resonance generated by the frequency of the device, and a applies a parent bias voltage having a different phase to each resonator at a frequency of the detectors of the plurality of resonators; synthesizing the plurality of resonators The output of the detector. Further, at least one resonator in the plurality of resonators to which the AC bias voltage is applied, the amplitude of the AC bias voltage In particular, the plurality of resonators are divided into a plurality of groups, and the AC bias voltage having a common amplitude and phase is applied to the resonators included in each group for each of the groups. And extracting the upper sideband of the plurality of resonators by the filter, and outputting the signal of the Hilbert transform pair by orthogonal correlation detection. The person may also use the radio to use the above complex number The output synthesized by the detectors of the resonators is transmitted to the above filter. The vibration wave detecting device of the 2nd point of the X-ray includes: a plurality of resonators, each of which resonates with a different specific frequency; And detecting the electrical output of the resonance of the resonators generated by the vibrating skins of the plurality of resonators at the frequency, and provided in each of the plurality of resonators; the bias yoke applying mechanism, And applying an AC bias voltage having a different phase to each of the resonators at a frequency common to the detection chirps provided in each of the plurality of resonators; and an output synthesizing mechanism The output of the detector is provided in each of the plurality of resonators. Further, the AC bias voltage applied by the bias applying means has at least one of the plurality of resonators having different amplitudes. In particular, the bias applying mechanism divides the plurality of resonators into groups, and applies a common alternating current amplitude and phase AC bias voltage to the resonators of the groups of 120994.doc -10- 200813407 for the distant groups. The method includes: a filter and a wave mechanism, wherein the combined output of the output of the detector synthesized by the output synthesizing mechanism is filtered, and the upper sideband is filtered, and the detector 4 is in each of the plurality of resonators; and The quadrature detecting mechanism performs positive-fair correlation detection on the upper sideband extracted by the filtering mechanism, and outputs a Hilbert conversion pair signal. _ • Furthermore, a wireless transmission mechanism may be included, which uses radio The composite output of the output of the detector synthesized by the above-described round-up & mechanism is transmitted to the above; the wave-sensing mechanism is disposed in each of the plurality of resonatorsThe car owner is good. The above detector is a piezoresistive resistor. Further, the above detector may be a capacitive element. [Effect of the Invention] According to the vibration wave detecting method and the vibration wave detecting device of the present invention, a complex load of 4 ^ can be realized. Furthermore, the addition of any composite frequency characteristic can be read and transmitted for an RF (Radio FreqUency) modulation signal having two degrees of freedom between the real part and the imaginary part. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. . #者, the same or equivalent parts are attached to the same symbols, and the description thereof will not be repeated. Hereinafter, an acoustic sensor that uses a vibration wave to be detected as a sound wave will be described as an example. Fig. 1 is a view showing an example of a sensor body of the vibration wave detecting device of the present invention. The sensor body formed on the semiconductor substrate 2 includes: 120994.doc 200813407 a diaphragm 2 for inputting sound waves; a beam 3 connected to the diaphragm 2; a termination plate connected to the front end of the beam 3 4, and on both sides of the beam 3, a plurality of (n) resonant beams 51a, 51b to 5na, 5nb (hereinafter collectively referred to as a resonant beam 5) supported by one side, all of which are formed by semiconductor germanium . The resonance beams 5 on both sides of the beam 3 have the same resonance frequency, and the opposite directions are 丨 pairs, and the η group of the resonance beams 5 are formed. In the embodiment, in order to make the mathematical processing simple and easy to understand, the two sides of the beam 3 are paired with the resonant beams having the same resonance frequency. Even if the resonant beam 5 is disposed only on one side of the beam, the same, , and 4 can be obtained. However, at this time, the sensitivity of the sensor is 1/2. Two yellow: the width of the beam 3 is the thickest at the end of the diaphragm 2 'from the diaphragm ^ begins to become thinner with the direction: the plate _, and at the end of the 4th end, the most fine vibration beam 5 is a resonator, each A total of adjustments have been made. The length of the mode of the frequency resonance is selected from a plurality of resonance beams 5 such as β, and the vibration is selectively responsive to the vibration expressed by the following formula (3). , the vibration frequency f and [number 3] f
CaVY χ2νϊ (3) /、中C·由實驗而決定之常數 各共振襟5之厚度 各共振樑5之長度 材料㈣㈡導財）之揚氏模量 材料物質（半導體石夕）之密度CaVY χ2νϊ (3) /, medium C· Constant determined by experiment The thickness of each resonance 襟5 The length of each resonant beam 5 Material (4) (2) Young's modulus of material (material)
X Y 120994.doc 12 200813407 由上述⑺式可知’藉由改變共振樑5之厚度a或者長度 X’可將其共振頻率f設定為預期值。各共振襟5具有固有 之共振頻率。本例令’將所有共振樑5之厚度a設為固定， 且使其長度X隨著自右娜片2側）向左側（終止㈣側）而逐 漸變長’隨著自右側（膜片2側）向左侧（終止板4側），將各 共振樑5固有地振動之共振頻率自高頻率設定為低頻率。 再者’使用微機械加工技術，將具有以上構成之感測器 本體旧造於半導體石夕基板2〇上。自膜片2輸入之振動能， 通過橫樑3而分配至各個共振樑5，且被各共振系統之機 械-電性轉換器吸收，並轉換為信號能後抽出。 (實施形態1) 圖2係表示使用上述感測器本體丨之本發明之振動波檢測 裝置之一例的電路圖。於感測器本體丨之各共振樑5之產生 ’變部分（検樑3侧），形成有包含多晶矽之壓致電阻61&、 6113〜61^、61113(以下，總稱為壓致電阻6)。該等複數個壓致 電阻6並聯地連接，該壓致電阻6之一端與交流電源7；u、 711}〜71^、71113(以下，總稱為交流電源7)連接，其中上述交 流電源具有共通之頻率且具有分別不同之振幅與相位，而 該壓致電阻6之另一端與運算放大器1〇之一輸入端子連 接。運算放大器10之+輸入端子接地。將相位彼此相反之 父流偏壓電壓施加至對向之共振樑5中。圖2中，以電壓yi 之負说表不相反之相位。 電壓VI〜Vn可為相同。對於相位多卜知而言，至少1個 具有與其他不同之相位。 120994.doc 200813407 其次，就圖2所示之振動波檢測裝置之作用加以說明。 一般而言，電阻體之電阻值R之相對變化率藉由如下式（4) 而表示，其中將電阻體之泊松比設為V，將長度設為丨，將 電阻率設為Ρ。 [數4] (4)X Y 120994.doc 12 200813407 It is known from the above formula (7) that the resonance frequency f can be set to an expected value by changing the thickness a or the length X' of the resonant beam 5. Each of the resonances 具有5 has an inherent resonance frequency. In this example, 'the thickness a of all the resonant beams 5 is set to be fixed, and the length X is gradually increased from the side of the right-hand sheet 2 to the left side (the end (four) side)' with the right side (the diaphragm 2 On the left side (the side of the terminating plate 4), the resonance frequency in which each of the resonant beams 5 is inherently vibrated is set from a high frequency to a low frequency. Further, the sensor body having the above configuration was fabricated on the semiconductor substrate 2 using micromachining technology. The vibration energy input from the diaphragm 2 is distributed to the respective resonant beams 5 through the beam 3, and is absorbed by the mechanical-electrical converter of each resonance system, and converted into signal energy and then extracted. (Embodiment 1) FIG. 2 is a circuit diagram showing an example of a vibration wave detecting device of the present invention using the above-described sensor body 丨. The generating portion (the side of the girders 3) of each of the resonant beams 5 of the sensor body , is formed with a piezoresistive resistor 61 & 6,113 to 61^, 61113 (hereinafter, collectively referred to as a varistor 6) including polycrystalline germanium. . The plurality of piezoresistors 6 are connected in parallel, and one end of the piezoresistive resistor 6 is connected to an alternating current power source 7; u, 711}~71^, 71113 (hereinafter, collectively referred to as an alternating current power source 7), wherein the alternating current power source has common The frequency has a different amplitude and phase, and the other end of the voltage-resistive 6 is connected to one of the input terminals of the operational amplifier 1〇. The + input terminal of the operational amplifier 10 is grounded. A parent bias voltage having phases opposite to each other is applied to the opposing resonant beam 5. In Fig. 2, the opposite phase is indicated by the negative voltage yi. The voltages VI to Vn can be the same. For phase Dob, at least one has a different phase from the others. 120994.doc 200813407 Next, the action of the vibration wave detecting device shown in Fig. 2 will be described. In general, the relative change rate of the resistance value R of the resistor is expressed by the following formula (4), wherein the Poisson ratio of the resistor is V, the length is 丨, and the resistivity is Ρ. [Number 4] (4)
形成於半導體矽基板20上之壓致電阻6中，主要因畸變 而使電阻率變化，若將壓致電阻係數設為π，將揚氏模量 設為Ε，則壓致電阻之電阻值R之相對變化率可如以下式 (5)而表示。 [數5]In the piezoresistive resistor 6 formed on the semiconductor substrate 20, the resistivity is mainly changed by distortion. If the piezoresistance coefficient is π and the Young's modulus is Ε, the resistance value of the piezoresistor is R. The relative change rate can be expressed by the following formula (5). [Number 5]
6R I πΕ δΐ (5)6R I πΕ δΐ (5)
如圖2之振動波檢測裝置’將輸出形態稱作振動波形之 合成輸出’即’該輸出形態係將各共振樑5之振動輸出作 為波形並加上1個信號線而輸出之輸出形態。此時之感測 器本體1之作用在於’有效地向機械振動之電性信號進行 轉換’並調整基於機械頻率分解之電性信號上之頻 性。 、 上側之共振樑5 1 a〜5na中施加 樑51b〜5nb中施加負直流偏壓 圖9係使用感測器本體1表示壓致電阻6之共振樑5之振動 波形之和的輸出形式之-例的電路圖。圖9之電路中，向 正直流偏壓、向下侧之共振 ’將各共振樑5之振動輸出作 120994.doc •14- 200813407 為波形加上1根信號線後輸出。此處，為了易於理解，使 成對之上下共振樑5以逆相而振動，使上下壓致電阻6以彼 此逆相而伸縮。 圖9中，對於第i共振樑51上之壓致電阻之電阻值，若將 上側設為Ri+SRi(t)，將下側設為Ri_5Ri⑴，將上下各電阻 之其他共通端子之電壓設為v〇、-ν〇，則流入運算放大器 之假想接地點之電流由以如下式（6)而表示。 [數6]The vibration wave detecting device of Fig. 2 refers to the output form as a combined output of the vibration waveforms. That is, the output form is an output form in which the vibration output of each of the resonant beams 5 is a waveform and one signal line is added and output. At this time, the sensor body 1 functions to 'effectively convert the electrical signal of the mechanical vibration' and adjust the frequency on the electrical signal based on the mechanical frequency decomposition. The negative DC bias is applied to the applied beams 51b to 5nb of the upper resonant beam 5 1 a to 5na. FIG. 9 is an output form of the sum of the vibration waveforms of the resonant beam 5 of the piezoelectric resistor 6 using the sensor body 1 - The circuit diagram of the example. In the circuit of Fig. 9, the positive DC bias and the resonance to the lower side are used to output the vibration of each resonant beam 5 as 120994.doc • 14- 200813407, and one signal line is added to the waveform and output. Here, for the sake of easy understanding, the pair of upper and lower resonance beams 5 are vibrated in a reverse phase, and the upper and lower piezoresistors 6 are expanded and contracted in opposite phases. In Fig. 9, for the resistance value of the piezoresistive resistor on the i-th resonant beam 51, if the upper side is Ri+SRi(t), the lower side is set to Ri_5Ri(1), and the voltages of the other common terminals of the upper and lower resistors are set to V〇, -ν〇, the current flowing into the imaginary ground point of the operational amplifier is expressed by the following equation (6). [Number 6]
F ^ hY-SR.(t)-atm 並且，藉由反饋電阻Rf，作為如 (6) 下式（7)表不之振動 電 壓而抽出。 [數7]F ^ hY - SR. (t) - atm is extracted by the feedback resistor Rf as the vibration voltage expressed by the following equation (7). [Number 7]
2Rfv R2Rfv R
V ^(t)' 八V ^(t)' eight
RR
NN
R ⑺ 合成輸出之負載Wi藉由調整電阻Ri而可變。然而，實際上 製造晶片時之微調等為固定。 考慮利用上述方法中輸出與偏壓電壓V0成比例，而針對 各共振樑5改變偏壓電壓。圖1〇係使用複數個偏壓電壓線 之壓致電阻方式之合成輸出之一例的電路圖。使用圖之 電路，可按照頻率動態地調整增益。若將第丨樑之偏壓電 壓設為士Vi，則輸出電壓vout由如下式（8)而表示。 120994.doc -15- (8) 200813407 [數8]R (7) The load Wi of the composite output is variable by adjusting the resistance Ri. However, the fine adjustment or the like when actually manufacturing the wafer is fixed. It is considered that the output is varied in proportion to the bias voltage V0 by the above method, and the bias voltage is changed for each of the resonant beams 5. Fig. 1 is a circuit diagram showing an example of a composite output of a piezoresistive mode using a plurality of bias voltage lines. Using the circuit of the diagram, the gain can be dynamically adjusted to the frequency. When the bias voltage of the second beam is set to ±Vi, the output voltage vout is expressed by the following equation (8). 120994.doc -15- (8) 200813407 [Number 8]
V Σ 2R,V Σ 2R,
VV
R yvR yv
RR
其中，因通過橫樑3之配線數，若共振樑5之數量增加， 則必須進行將共振樑5分為組之偏壓控制。 圖1〇所示之振動波檢測方法中，頻率特性為可變，但各 頻率中可設定之增益限於實數。頻率濾波時之增益為實數However, if the number of the resonant beams 5 increases due to the number of wires passing through the beam 3, it is necessary to perform the bias control for grouping the resonant beams 5 into groups. In the vibration wave detecting method shown in Fig. 1A, the frequency characteristic is variable, but the gain that can be set in each frequency is limited to a real number. The gain during frequency filtering is real
或者虛數則限於脈衝應答為對稱或者反對稱之情形。若各 頻率中所設定之增益限於實數，則無法實現任意之脈衝應 答。 ~ 圖2所示之本發明之振動波檢測裝置中，可實現可變負 載濾波器，該可變負載濾波器實現更普通之頻率應答。如 圖2所不’將第i共振樑5ia及5ib之共振頻率設為，壓致 電阻之電阻值設為Ri，電阻變化設為SRi(t)。將以頻率Ω、 振幅為Vi、相位為w之正弦波交流電壓施加至各壓致電阻 6 i a之個別、子中。且將相同正弦波交流電壓之逆相電壓 供給至逆相側之壓致電阻6il)中。將正相與逆相之壓致電 阻6之共通端子與轉移阻抗型之運算放大器10之輸入端子 連接。轉移阻抗型之運算放大器1〇係輸入阻抗為〇、輸出 阻抗為0之電流-電壓轉換放大器。 此時’自第i共振樑5iaA5ib流入放大器之電流為如下式 (9) 〇 [數9] 120994.doc -16· 200813407Or the imaginary number is limited to the case where the impulse response is symmetric or antisymmetric. If the gain set in each frequency is limited to a real number, no arbitrary pulse response can be achieved. ~ The vibration wave detecting device of the present invention shown in Fig. 2 can realize a variable load filter which realizes a more general frequency response. As shown in Fig. 2, the resonance frequencies of the i-th resonance beams 5ia and 5ib are set such that the resistance value of the piezoresistive resistance is Ri and the resistance change is set to SRi(t). A sinusoidal alternating voltage having a frequency Ω, an amplitude of Vi, and a phase of w is applied to each of the individual resistors 6 i a . Further, the reverse phase voltage of the same sinusoidal alternating current voltage is supplied to the piezoresistive resistor 6il) on the reverse phase side. The common terminal of the positive phase and the reverse phase voltage is connected to the input terminal of the operational amplifier 10 of the transfer impedance type. The transfer impedance type operational amplifier 1 is a current-voltage conversion amplifier having an input impedance of 〇 and an output impedance of zero. At this time, the current flowing into the amplifier from the i-th resonance beam 5iaA5ib is as follows (9) 〇 [9] 120994.doc -16· 200813407
Xc〇s(at+^) Vc〇s(at+^^ c〇s(at+^. )5Ri(t) Ri R i s—(9) 其中，Hi三2WRi係調變之增益係數，Fi (t，叫咖⑴/Ri係共振樑5i之振動時間波形，（t，coi)藉由祕〇ne(魚 骨)構造之感測器本體i之特性’具有ωί附近之較窄頻帶之 光譜分佈。 將Ν設為共振樑5之一對之總數 流之合計波形由如下式（1〇)而表示 [數 10] ，整個共振樑5之輪出Xc〇s(at+^) Vc〇s(at+^^ c〇s(at+^. )5Ri(t) Ri R is—(9) where Hi 3 2WRi is the gain coefficient of modulation, Fi (t, called The vibration time waveform of the coffee (1)/Ri resonance beam 5i, (t, coi) The characteristic of the sensor body i constructed by the secret ne (fish bone) structure has a spectral distribution of a narrow band near ωί. It is assumed that the total waveform of the total flow of one pair of the resonant beam 5 is represented by the following formula (1〇) [10], and the entire resonant beam 5 is rotated.
(10)(10)
此處，進而 帶，為 [數 11] 出假定為充分窄之頻 F1^ ω') - ReiFioy)^} [數 12]斤綱⑼+炎)：=如把，，} ^Re{H(Wi)ejnt}=臺{Η(ω〗>Ωι + Η*(ω>’} (11) 120994.doc • 17 - (12) 200813407 時，即，F(co)及Η(ω)僅正之頻率co-0，為非零之複數函數 時，則輪出電流可由如下式（13)而表示。此處，虛數單位 以字母j來表示。又，Re表示實部，函數符號之右側之* 表示複數共軛（以下相同）。 [數 13]Here, in turn, the band [10] is assumed to be a sufficiently narrow frequency F1^ ω') - ReiFioy)^} [number 12] 千纲(9)+炎):=如把,,} ^Re{H( Wi)ejnt}=台台{Η(ω〗>Ωι + Η*(ω>'} (11) 120994.doc • 17 - (12) 200813407, ie, F(co) and Η(ω) are only positive When the frequency co-0 is a non-zero complex function, the wheel current can be expressed by the following equation (13). Here, the imaginary unit is represented by the letter j. Further, Re represents the real part, and the right side of the function symbol * Indicates complex conjugate (the same below). [13]
1 N 以)=—7 Σ (F(a)i)ejwit+F*ui)e-_)(H(a)i)eKU + 4 i，l1 N to) = -7 Σ (F(a)i)ejwit+F*ui)e-_)(H(a)i)eKU + 4 i,l
# — f (FU)e^+ F*U)d叫（HU)ei〇t + H本 4Δ ω Jo 1 Λ p°° =— ielQt \ FU)HU)eWda) 4Δ ω J〇# — f (FU)e^+ F*U)d called (HU)ei〇t + H Ben 4Δ ω Jo 1 Λ p°° =— ielQt \ FU)HU)eWda) 4Δ ω J〇
P OO + e~iQt 1 Ρ(ω)Η* (w)eitot dco J〇P OO + e~iQt 1 Ρ(ω)Η* (w)eitot dco J〇
p OO 十 I Ρ*(ω〉Η(ω>θ_Μ(1ωp OO 十 I Ρ*(ω〉Η(ω>θ_Μ(1ω
Jo J〇 = f°°F(ce))H(a))e^da) } ω Jq + i?e{eJQt F* (ω)Η(ω)θ~1ωΜω}} (13) 式（12)表示，以載波頻率Ω進行調變，並於其上旁波帶 (以下，稱作上旁波帶）而獲得濾波器結果，該濾波器結果 為作為F(co)之逆傅立葉轉換（由F-1表示）之經解析的輸入信 號 f(t)、 f(t) = F-l{F(co)}Jo J〇= f°°F(ce))H(a))e^da) } ω Jq + i?e{eJQt F* (ω)Η(ω)θ~1ωΜω}} (13) Formula (12) It is shown that the carrier frequency is Ω, and the filter is obtained by the subband (hereinafter referred to as the upper sideband), and the result of the filter is the inverse Fourier transform as F(co) F-1 represents the resolved input signal f(t), f(t) = Fl{F(co)}
之複合頻率特性Η(ω)的濾波器結果。又，f * (_t)、即F 120994.doc -18- 200813407 氺（ω)之逆傅立葉轉換 f*(-t) = F-l{F*(c〇)} 之Η(ω)之濾波器結果，於下旁波帶（以下，稱作下旁波帶） 而獲得。 該過程表示於圖3。圖3係模式性表示頻率分解後之振幅 相位調變之作用的光譜分佈。經頻率分解之輸入信號分別 地乘以固定之複數振幅Hi，獲得僅載波頻率卩之頻率偏 私。該等之合成為Η(ω)之頻率特性之乘法運算與固定頻率 Ω之載波的調變。例如，某共振樑5中經頻率分解之輸入光 譜分佈A，成為僅載波頻率〇之頻率偏移後之光譜分佈β。 分解並僅以載波頻率Ω而頻率偏移後之光譜合成作為上旁 波帶之光譜分佈而獲得。 該結果與僅將聲響信號f(t)以頻率特性Η(ω)而濾波，其 後以載波頻率Ω而調變者不同。以頻率特性Η(ω)而濾波並 以載波頻率Ω而調變者，接受聲響信號之負頻率為Η*⑷ 之杧皿又化。與此相對，本發明之方法中，乘以與正頻率 相同之Η(ω)之增益。 圖4表示考慮下旁波帶或_Ω之頻率偏移之合成信號之光 譜分佈。4慮各個旁頻帶成分之含義。載波頻率Ω之右侧 之成分（上旁波帶）係將所希望之濾波器特性之輸出解析為 信號者。載波頻率Ω之左側之成分（下旁波帶）如以下式（14) 般， [數 14] I20994.doc •19- 200813407 J 〇 = J〇 Ε(ω)Η*(ω)63^άω}* ={f(t)*h*(—t)}， (14) 係頻率應答Η* (ω)或者脈衝應答h* (-t)之濾波器輸出。 此處’函數之間之符號*表示卷積。式（14)由複數共軛之 逆傅立葉轉換 [數 15] p 〇〇 J〇 Η*(ω〉β^(1ω 叫 J〇 Η(ω)一Hd6)}* = h*(一t) 而導出。· 可知負頻率區域中，_Ω之左側之成分係所希望之濾波器 特性之輸出之複數共軛，_Ω之右側之成分係上述Η*(ω)2 濾波器輸出之複數共軛。再者，若偏壓電壓v〇〜vn相等， 則振動波檢測裝置之頻率特性平穩。藉由改變偏壓電壓 V0〜Vn，可改變濾波器特性。 如上所述，上旁波帶與下旁波帶作為信號之含義不同。 共振樑5之經合成之輸出，必須於使上旁波帶與下旁波帶 分離後進行解調。可對合成輸出信號進行直接解調，以載 波頻率Ω而調變，因此可直接利用無線發送。 圖5係表不利用無線之振動波檢測裝置之構成例的方塊 圖。圖5(a)表不感測器侧之電路，圖5(b)表示接受側之電 路。如圖5(a)所示，於感測器侧，由感測器本體1調變之信 號利用變壓器11進行阻抗整合，並由放大器12放大後自天 線13 S以無線而發送。 圖5⑻所示之接受側，利用天線13R而接受並利用放大 120994.doc -20- 200813407 一器14而放大後之信號，由帶通濾波器（BpF)15分為上旁波 帶與下旁波帶。同時，利用PLL(Phase Locked Loop，鎖相 迴路）16等使載波頻率Ω再生。根據載波頻率由移相器 (Phase Shifte〇17製作〇。與90。之相位之載波頻率，進行經 BPF15分離之上旁波帶（USB:Upper Side Band，上旁波帶） 之正父檢波。USB中，利用乘法器18對〇。與9〇。之相位之載 波頻率進行乘法運算，通過低通濾波器（L〇w pass ，The composite frequency characteristic Η(ω) filter result. Also, f * (_t), that is, F 120994.doc -18- 200813407 滤波器(ω) inverse Fourier transform f*(-t) = Fl{F*(c〇)} Η(ω) filter result It is obtained in the lower sideband (hereinafter referred to as the lower sideband). This process is shown in Figure 3. Fig. 3 is a diagram showing the spectral distribution of the effect of amplitude phase modulation after frequency decomposition. The frequency-decomposed input signals are respectively multiplied by a fixed complex amplitude Hi to obtain a frequency offset of only the carrier frequency 卩. These combinations are the multiplication of the frequency characteristics of Η(ω) and the modulation of the carrier of the fixed frequency Ω. For example, the input spectral distribution A decomposed by frequency in a certain resonant beam 5 becomes a spectral distribution β after the frequency shift of only the carrier frequency 〇. The spectral synthesis after decomposition and only the carrier frequency Ω and the frequency offset is obtained as the spectral distribution of the upper sideband. This result is different from the case where only the acoustic signal f(t) is filtered by the frequency characteristic Η(ω), and then modulated by the carrier frequency Ω. If the frequency characteristic Η(ω) is filtered and modulated by the carrier frequency Ω, the negative frequency of the received acoustic signal is Η*(4). In contrast, in the method of the present invention, the gain of Η(ω) which is the same as the positive frequency is multiplied. Figure 4 shows the spectral distribution of the composite signal considering the frequency offset of the lower sideband or _Ω. 4 consider the meaning of each sideband component. The component on the right side of the carrier frequency Ω (upper sideband) is the one that resolves the output of the desired filter characteristic into a signal. The component on the left side of the carrier frequency Ω (lower sideband) is as shown in the following equation (14). [12] I20994.doc •19- 200813407 J 〇= J〇Ε(ω)Η*(ω)63^άω} * ={f(t)*h*(—t)}, (14) Filter output with frequency response Η* (ω) or impulse response h* (-t). Here the symbol * between functions represents convolution. Equation (14) is inverse Fourier transform of complex conjugate [15] p 〇〇J〇Η*(ω>β^(1ω is called J〇Η(ω)-Hd6)}* = h*(一t) Derived. · It can be seen that in the negative frequency region, the component on the left side of _Ω is the complex conjugate of the desired filter characteristic output, and the component on the right side of _Ω is the complex conjugate of the above Η*(ω)2 filter output. If the bias voltages v〇 to vn are equal, the frequency characteristics of the vibration wave detecting device are stable. By changing the bias voltages V0 to Vn, the filter characteristics can be changed. As described above, the upper sideband and the lower side wave are as described above. The meaning of the band as a signal is different. The synthesized output of the resonant beam 5 must be demodulated after separating the upper sideband from the lower sideband. The composite output signal can be directly demodulated and adjusted at carrier frequency Ω. Fig. 5 is a block diagram showing an example of a configuration of a wireless vibration wave detecting device. Fig. 5(a) shows the circuit on the sensor side, and Fig. 5(b) shows the receiving side. As shown in Fig. 5(a), on the sensor side, the signal modulated by the sensor body 1 is blocked by the transformer 11. Anti-integration, amplified by amplifier 12 and transmitted wirelessly from antenna 13 S. The receiving side shown in Fig. 5 (8) receives and amplifies the signal by using antenna 13R and amplifying 120994.doc -20- 200813407 The bandpass filter (BpF) 15 is divided into an upper sideband and a lower sideband. At the same time, the carrier frequency Ω is reproduced by a PLL (Phase Locked Loop) 16, etc. The phase shifter is used according to the carrier frequency ( Phase Shifte〇17 produces 〇. With the carrier frequency of the phase of 90, the positive edge detection of the bypass band (USB: Upper Side Band) is separated by the BPF 15. In the USB, the multiplier 18 is used. 〇. Multiply with the carrier frequency of the phase of 9〇, through a low-pass filter (L〇w pass ,
LPF) 19後獲得檢波輸出。正交相關檢測後之2個信號成為 已。又疋之複數負載濾波器之輸出之希爾伯特轉換對。即f 自〇°之相位獲得實部之信號，自9Ό。之相位獲得虛部之信號。 再者，所施加之交流偏壓電壓並非係正弦波亦可。此係 因為對BPF1 5進订適當調節，可於抽出上旁波帶時抑制讀 波。交流偏壓電壓可例如為矩形波。 如以上所呪明般，根據本發明之振動波檢測裝置，可實 現任意之複數負载。並且’可作為除具有任意之複合頻率 特性之：亦具有實部與虛部之2自由度的RF調變信號而讀 於先前之使用麥克風或振 可用於先前所未出現之如 本發明之振動波檢測方法可用 動感測器之任一情形。進而，亦 下情形中。 根據複數波形之特傲社 聲響進行檢測。例如，可h對時間分解能較高之振動· 現之異常音。X，可、ί測：連續開動之機器中瞬間出 Κ兄I頻帶之AM/FM解調器。 不會產生矛盾而可檢測容 、 輪出信號，因此適用於高精度 120994.doc 200813407 之波形測量。 (實施形態1之變形例） 圖6表示將共振樑5分為群並施加交流偏壓電壓之振動波 檢測裝置之例。若共振樑5之數量增多，則因通過橫樑3之 配線數受到限制，難以向所有共振樑5施加不同相位之交 流偏壓電壓。例如，如圖6所示，將共振樑5分為群，針對 各群，將具有共通之振幅與相位的交流偏壓電壓施加至各 群所包含之共振樑5中。The detection output is obtained after LPF) 19. The two signals after the orthogonal correlation detection become. The Hilbert transform pair of the output of the complex load filter. That is, f is the phase of the real phase from the phase of 〇°, since 9Ό. The phase gets the signal of the imaginary part. Furthermore, the applied AC bias voltage is not a sine wave. This is because the BPF1 5 is properly adjusted to suppress the read wave when the upper sideband is extracted. The AC bias voltage can be, for example, a rectangular wave. As described above, according to the vibration wave detecting device of the present invention, any arbitrary load can be realized. And 'can be used as an RF modulated signal with 2 degrees of freedom of the real and imaginary parts, except for the characteristic of the composite frequency. The previous use of the microphone or the vibration can be used for the vibration of the present invention which has not appeared before. The wave detection method can be used in any case of a motion sensor. Furthermore, it is also the case. It is detected according to the sound of the complex waveform. For example, it is possible to decompose the vibration with a high degree of time and the current abnormal sound. X, can, and measure: the AM/FM demodulator of the I-band I band is instantaneously released in the machine. Waveform measurement with high precision 120994.doc 200813407 is applicable without detecting contradiction and detecting the volume and rotating the signal. (Modification of the first embodiment) Fig. 6 shows an example of a vibration wave detecting device in which the resonance beam 5 is divided into groups and an AC bias voltage is applied. When the number of the resonant beams 5 is increased, the number of wires passing through the beam 3 is limited, and it is difficult to apply an AC bias voltage of a different phase to all of the resonant beams 5. For example, as shown in Fig. 6, the resonant beam 5 is divided into groups, and an AC bias voltage having a common amplitude and phase is applied to the resonant beam 5 included in each group for each group.
圖6之例中，將振幅為V1、相位為幻之交流偏壓電壓施 加至共振樑51a與523中。將振幅為_V1、相位為^之交流 偏廢電麼施加至共振樑51_52b中。以同樣方式，依次將 相鄰玲共振樑5分為1組，將共通之振幅與相位之交流偏 麼電壓施加至各組中。以μ 、 式’複數負载之振幅與相位 =由度減小’複數負載不會產生變化，於橫樑3之配線 數之限制内可設有多個共振樑5。 圖6之例中’以相鄰2個丘振 量亦可為3以上。又，//丘1組共振標5之數 同。進而廿t 1組共振樑5之數量可針對組而不 並非為相鄰共振樑5，例 振襟5為！組，針對各组施加共通之鮮選擇相個共 ㈣。分為何種組合之群、將打種心^、相位之交流偏麼 電壓施加至每個电中振幅與相位之交流偏歷 計。 組中，可根據所取得之複合頻率特性而設 (實施形態2) 明之振動波 圖7係表示檢測器為電容器之情形時的本發 120994.doc -22- 200813407 檢測裝置之一例的電路圖。 各共振樑5之前端部81&、gib〜8na、8nb(以下，總稱為 前端部8)所對向之位置之半導體矽基板20上，分別形成有 電極91a、91b〜9na、9nb(以下，總稱為電極9)，由各共振 i 樑5之前端部8與其所對向之各電極9構成電容器。共振樑5 < 之前端部8係伴隨振動而位置可上下移動之可動電極，另 - 一方面，形成於半導體矽基板20上之電極9係其位置無法 移動之固定電極。並且，若共振樑5以特定頻率振動，則 忒對向電極間之距離產生變動，因此，電容器之電容改變。 複數個電極9並聯連接，且與運算放大器10之一輸入端 子連接。運异放大器1〇之+輸入端子接地。共振樑5之前端 部8與具有共通之頻率且振幅與相位分別不同之交流電源 71a、71b〜7na、7nb連接。與圖2之電路相同，對向之共振 標5中施加有相位彼此相反之交流偏壓電壓。 若特疋之共振樑5共振，則藉由其畸變使共振樑5之前端 _ 部8與電極9之間之距離改變，且其之間之電容器之電容改 變，該等之變化之和作為運算放大器1〇之輸出（電壓v+)而 獲得。 ， 虽檢測益為電容器時，式（4)〜式（13)中代替電阻Ri，考 慮電容器之電容Ci之阻抗Zi。In the example of Fig. 6, an alternating bias voltage having an amplitude of V1 and a phase is applied to the resonant beams 51a and 523. An AC bias power having an amplitude of _V1 and a phase of ^ is applied to the resonant beam 51_52b. In the same manner, the adjacent Ling resonance beams 5 are sequentially divided into one group, and the common amplitude and phase AC bias voltages are applied to the respective groups. In the μ, the amplitude and phase of the complex load = the degree of decrease is reduced. The complex load does not change, and a plurality of resonant beams 5 can be provided within the limit of the number of wires of the beam 3. In the example of Fig. 6, 'the amplitude of two adjacent hills may be three or more. Also, the number of resonance symbols 5 of the 1st group is the same. Further, the number of the resonance beams 5 of the group 1 can be directed to the group rather than the adjacent resonance beam 5, for example, the vibration 5 is! Group, for each group to apply a common choice of a total of (four). What kind of combination group, which will be used to generate the heart ^, the phase of the AC bias voltage applied to the amplitude and phase of each electrical AC bias. In the group, it is possible to provide a vibration wave according to the obtained composite frequency characteristic. (Embodiment 2) FIG. 7 is a circuit diagram showing an example of the detecting device of the present invention 120994.doc -22-200813407 when the detector is a capacitor. Electrodes 91a, 91b, 9na, and 9nb are formed on the semiconductor cymbal substrate 20 at the positions where the front end portions 81', gibs, 8na, and 8nb (hereinafter collectively referred to as the distal end portions 8) of the respective resonant beams 5 are opposed to each other (hereinafter, Referring collectively to the electrode 9), a capacitor is formed by the front end portion 8 of each resonance i-beam 5 and the electrode 9 opposed thereto. Resonant beam 5 < The front end portion 8 is a movable electrode that can move up and down with vibration, and on the other hand, the electrode 9 formed on the semiconductor substrate 20 is a fixed electrode whose position cannot be moved. Further, when the resonant beam 5 vibrates at a specific frequency, the distance between the opposing electrodes varies, and therefore the capacitance of the capacitor changes. A plurality of electrodes 9 are connected in parallel and connected to one of the input terminals of the operational amplifier 10. The input terminal of the transmission amplifier 1〇 is grounded. The front end portion 8 of the resonant beam 5 is connected to an AC power source 71a, 71b to 7na, 7nb having a common frequency and having different amplitudes and phases. As in the circuit of Fig. 2, an alternating bias voltage having phases opposite to each other is applied to the opposite resonance target 5. If the resonant beam 5 of the special resonance resonates, the distance between the front end portion 8 of the resonant beam 5 and the electrode 9 is changed by the distortion thereof, and the capacitance of the capacitor between them changes, and the sum of the changes is used as an operation. Obtained by the output of the amplifier 1 (voltage v+). When the detection benefit is a capacitor, the resistance Ri of the capacitor Ci is considered in place of the resistor Ri in the equations (4) to (13).
Zi=l/(jaci) 此時，阻抗Zi包含頻率（角頻率），載波頻率Ω為固定且共 通，因此，若考慮僅l/j=_j變化，則與電阻時相同可進行 處理。振幅Hi包含虛數j，因此，輸出之相位與壓致電阻6 120994.doc •23· 200813407 之情形相比改變了 90。，經解調之輪出之實部與虛部替 換。可作為除具有任意之複合頻率特性之外亦具有實部盥 虛部之2自由度的變信號而讀出•傳送，此係與檢測 器為電阻時相同。 (貫施形態2之變形例） 圖8表示檢測器為電容器時將共振樑5分為群而施加交流 偏壓電壓之振動波檢測裝置之例。若共振樑5之數量增 多，則因通過橫樑3之配線數之限制，難以向所有共振標5 施加相位不同之交流偏壓電壓。 、與實施形態！之變形例（圖6)相肖，將相鄰2個共振樑5分 為1組，將具有共通之振幅與相位之交流偏壓電壓施加至 各組中。以此方式，複數負載之振幅與相位之自由度減 小，但複數數負載未發生變化，可於橫樑3之配線數之限 制内設置多個共振樑5。 圖8之例中，將相鄰2個共振樑5分為i組，i組之共振樑$ 之數量亦可為3以上。又，W共振樑5之數量可針對組而 不同進而，並非為相鄰共振樑5，例如，亦可選擇每❿個 之共振樑5為1組，將共通之振幅與相位之交流偏壓電壓施 加至各組中。分為何種組合之群、將何種振幅與相位之交 流偏壓電壓施加至每個組中，可根據所取得之複合頻率特 性而設計。 ' 如以上所說明，根據本發明之振動波檢測裝置，即使於 檢測器為電容器時亦可實現任意之複數負m。並且，可作 為除具有任意之複合頻率特性之外亦具有實部與虛部之2 120994.doc -24- 200813407 自由度的RF調變信號而讀出·傳送。 此外，上述硬體構成係一例，可任意地進行變更及修 正。 本申請案基於2006年5月12日提出之日本專利申請案特 願2006-133 802。本說明書中參照上述說明書、專利申社 範圍、圖式全體而編入。 [產業之可利用性] 本發明之振動波檢測方法及裝置可用於故障診斷裝置、 助聽态、語音識別系統、通信系統等之聲響感測器。 【圖式簡單說明】 ° 圖1係表示本發明之振動波檢測裝置之感測器本體之一 例的圖。 圖2係表示本發明之振動波檢測裝置之一例的電路圖。 圖3係模式性地表示頻率分解後之振幅相位調變之作用 的光譜分佈。 圖4係亦考慮下旁波帶或_Ω之頻率偏移之合成信號之光 譜分佈圖。 圖5(a)、（b)係表示利用無線之振動波檢測裝置之構成例 的方塊圖。 圖6係表不將共振樑分為群且施加交流偏壓電壓之振動 波檢测裝置之例的圖。 ^二表示測器為電容器時之本發明之振動波檢測裝 置之一例的電路圖。 圖8係表示檢測器為電容器時將共振樑分為群並施加交 120994.doc -25- 200813407 /瓜偏壓龟壓之振動波檢測裝置之例的圖。 圖9係表示壓致電阻之共振樑之振動波形之 ^ . %出形 式之一例的電路圖。 圖10係表示使用複數個偏壓電壓線之壓致電阻方式之合 成輸出之一例的電路圖。 【主要元件符號說明】 1 2 3 4 10 11 12、 13S 15 16 17 18 19 20 51a 5iaZi = l / (jaci) At this time, the impedance Zi includes the frequency (angular frequency), and the carrier frequency Ω is fixed and common. Therefore, if only l/j = _j change is considered, the same processing as in the case of the resistance can be performed. The amplitude Hi contains an imaginary number j, so the phase of the output changes by 90 compared to the case of the piezoresistive 6 120994.doc • 23· 200813407. The demodulated wheel is replaced by the real part and the imaginary part. It can be read and transmitted as a variable signal with 2 degrees of freedom of the real part and imaginary part in addition to any composite frequency characteristic. This is the same as when the detector is a resistor. (Modification of the second embodiment) Fig. 8 shows an example of a vibration wave detecting device that applies an alternating current bias voltage by grouping the resonant beam 5 into a group when the detector is a capacitor. If the number of the resonant beams 5 is increased, it is difficult to apply an AC bias voltage having a different phase to all of the resonance targets 5 due to the limitation of the number of wires passing through the beam 3. And implementation! In the modification (Fig. 6), the adjacent two resonance beams 5 are divided into one group, and an AC bias voltage having a common amplitude and phase is applied to each group. In this way, the degree of freedom of the amplitude and phase of the complex load is reduced, but the complex load is not changed, and a plurality of resonant beams 5 can be provided within the limit of the number of wires of the beam 3. In the example of Fig. 8, the adjacent two resonant beams 5 are divided into groups i, and the number of the resonant beams $ of the i group may be three or more. Moreover, the number of the W resonant beams 5 may be different for the group, and is not the adjacent resonant beam 5. For example, each of the resonant beams 5 may be selected as a group, and the common amplitude and phase AC bias voltages will be selected. Apply to each group. The combination of which group is divided and the amplitude and phase of the AC bias voltage are applied to each group, and can be designed according to the obtained composite frequency characteristics. As described above, according to the vibration wave detecting device of the present invention, any plural negative m can be realized even when the detector is a capacitor. Further, it can be read and transmitted as an RF modulation signal having 2 120994.doc -24 - 200813407 degrees of freedom of the real part and the imaginary part in addition to any composite frequency characteristic. Further, the above-described hardware configuration is an example and can be arbitrarily changed and corrected. The present application is based on Japanese Patent Application No. 2006-133 802, filed on May 12, 2006. In this specification, the above description, the scope of the patent application, and the drawings are incorporated. [Industrial Applicability] The vibration wave detecting method and apparatus of the present invention can be used for an acoustic sensor such as a fault diagnosis device, a hearing aid state, a voice recognition system, and a communication system. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an example of a sensor body of a vibration wave detecting device of the present invention. Fig. 2 is a circuit diagram showing an example of a vibration wave detecting device of the present invention. Fig. 3 is a view schematically showing the spectral distribution of the action of amplitude phase modulation after frequency decomposition. Fig. 4 is a light spectrum distribution diagram of a composite signal in which the frequency difference of the side band or _Ω is also considered. Figs. 5(a) and 5(b) are block diagrams showing a configuration example of a wireless vibration wave detecting device. Fig. 6 is a view showing an example of a vibration wave detecting device which does not divide a resonance beam into a group and applies an AC bias voltage. ^2 is a circuit diagram showing an example of the vibration wave detecting device of the present invention when the measuring device is a capacitor. Fig. 8 is a view showing an example of a vibration wave detecting device which divides a resonance beam into a group and applies a 120994.doc -25-200813407 / melon-biased turtle pressure when the detector is a capacitor. Fig. 9 is a circuit diagram showing an example of a vibration waveform of a resonant beam of a piezoelectric resistor. Fig. 10 is a circuit diagram showing an example of a composite output of a piezoresistive method using a plurality of bias voltage lines. [Main component symbol description] 1 2 3 4 10 11 12, 13S 15 16 17 18 19 20 51a 5ia
14 、13R ' 51b、52a、52b 、5ib、5na、5nb 感測器本體 膜片 橫樑 終止板 運算放大器 變壓器 放大器 天線 帶通濾波器（BPF) PLL 移相器（Phase Shifter) 乘法器 低通濾波器（LPF) 半導體矽基板 共振樑 61a、61b、62a、62b、壓致電阻 6ia、6ib、6na、6nb 120994.doc -26- 200813407 71a、71b、72a、72b、 7na 、 7nb 81 a、81b、82a、82b、 8ia、8ib、8na、8nb 91a 、 91b 、 92a 、 92b 、 9ia、9ib、9na、9nb 交流電源 前端部 電極14, 13R ' 51b, 52a, 52b, 5ib, 5na, 5nb Sensor Body Diaphragm Beam Termination Board Operational Amplifier Transformer Amplifier Antenna Bandpass Filter (BPF) PLL Phase Shifter (Phase Shifter) Multiplier Low Pass Filter (LPF) semiconductor germanium substrate resonant beams 61a, 61b, 62a, 62b, piezoresistive 6ia, 6ib, 6na, 6nb 120994.doc -26- 200813407 71a, 71b, 72a, 72b, 7na, 7nb 81 a, 81b, 82a , 82b, 8ia, 8ib, 8na, 8nb 91a, 91b, 92a, 92b, 9ia, 9ib, 9na, 9nb AC power front end electrodes
120994.doc -27 -120994.doc -27 -
Claims (1)
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| JP2006133802A JP4539920B2 (en) | 2006-05-12 | 2006-05-12 | Vibration wave detection method and apparatus |
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| TWI323340B TWI323340B (en) | 2010-04-11 |
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| JP (1) | JP4539920B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI426786B (en) * | 2009-12-31 | 2014-02-11 | Fan En Yueh | Voice receiver and electronic device using the same |
| TWI471474B (en) * | 2011-03-07 | 2015-02-01 | ||
| TWI681371B (en) * | 2018-03-31 | 2020-01-01 | 鈺紳科技股份有限公司 | Vibration and sound wave integrated sensing system and method |
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| TWI466442B (en) | 2011-12-07 | 2014-12-21 | Ind Tech Res Inst | Inter-digital bulk acoustic resonator |
| DE102012204357A1 (en) * | 2012-03-20 | 2013-09-26 | Siemens Aktiengesellschaft | Sensor arrangement for detecting sound emissions of object, used in industrial plant, has detecting unit to detect the sum of electrical currents flown through the respective first electrode elements as measurement signal |
| JP7030331B2 (en) * | 2018-03-28 | 2022-03-07 | リバーエレテック株式会社 | AE sensor element and AE sensor |
| CN110793620B (en) * | 2019-11-28 | 2024-01-26 | 长安大学 | Noise detection device and detection method |
| KR20220037551A (en) | 2020-09-17 | 2022-03-25 | 삼성전자주식회사 | Sensor interface comprising resonator and differential amplifier |
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| JPS582640U (en) * | 1981-06-30 | 1983-01-08 | 日本精密測器株式会社 | Vibrating piece type frequency meter |
| JP3348687B2 (en) * | 1998-05-22 | 2002-11-20 | 住友金属工業株式会社 | Vibration wave detection method and device |
| JP3348686B2 (en) * | 1998-05-22 | 2002-11-20 | 住友金属工業株式会社 | Vibration wave detection method and device |
| JP3251555B2 (en) * | 1998-12-10 | 2002-01-28 | 科学技術振興事業団 | Signal analyzer |
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| TWI426786B (en) * | 2009-12-31 | 2014-02-11 | Fan En Yueh | Voice receiver and electronic device using the same |
| TWI471474B (en) * | 2011-03-07 | 2015-02-01 | ||
| TWI681371B (en) * | 2018-03-31 | 2020-01-01 | 鈺紳科技股份有限公司 | Vibration and sound wave integrated sensing system and method |
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| JP4539920B2 (en) | 2010-09-08 |
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