TW200813248A - Flow-formed chamber component having a textured surface - Google Patents

Flow-formed chamber component having a textured surface Download PDF

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Publication number
TW200813248A
TW200813248A TW95133939A TW95133939A TW200813248A TW 200813248 A TW200813248 A TW 200813248A TW 95133939 A TW95133939 A TW 95133939A TW 95133939 A TW95133939 A TW 95133939A TW 200813248 A TW200813248 A TW 200813248A
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Taiwan
Prior art keywords
mandrel
preform
textured
processing chamber
protrusions
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TW95133939A
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Chinese (zh)
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TWI345593B (en
Inventor
Stephen E Abney
Anthony Vesci
Joseph F Sommers
Marc O Schweitzer
Scott Dickerson
Jennifer Tiller
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Applied Materials Inc
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Publication of TWI345593B publication Critical patent/TWI345593B/en

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Abstract

A method of fabricating a component for a substrate processing chamber involves providing a preform having internal and external surfaces, and providing a mandrel having a textured surface with a pattern of textured features comprising protrusions and depressions. The internal surface of the preform component is contacted with the textured surface of mandrel, and a pressure is applied to the external surface of the preform. The pressure is sufficiently high to plastically deform the preform over the textured surface of the mandrel to form a component having a textured internal surface comprising the pattern of textured feature that are shaped and sized to adhere process residues generated in the processing of substrates.

Description

200813248 九、發明說明: 【發明所屬之技術領域】 本發明有關於一種製造用於基板處理室之元件的方 法,特別是有關於以流動形成製造具有紋理表面之元件的 方法。 【先前技術】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating an element for a substrate processing chamber, and more particularly to a method of forming an element having a textured surface by flow formation. [Prior Art]

在處理如半導體晶圓及顯示器等基板時,將一基板置 於一處理室内並暴露於一能量化氣體中以便在基板上沈積 或蝕刻材料。在此處理過程中,會產生處理殘餘物且可能 沈積於處理室之内表面上。舉例而言,在濺鍍沈積製程中, 由一靶材濺鍍出來以沈積在一基板上之材料亦會沈積在處 理室中之其他元件表面上,例如沈積環、陰蔽環、室壁内 襯及聚焦環。在後續處理循環中,所沈積之處理殘餘物可 能自處理室表面「剝離」而掉落並污染基板。為了減少基 板受處理殘餘物之污染,可使處理室中之元件表面具有紋 理。將處理殘餘物吸附至紋理表面且可抑制處理殘餘物剝 落並避免污染處理室中之基板。 傳統上,在一種多重步驟製程中製造具有紋理表面之 元件。在第一製程步驟中,係製造元件之外型或整體結構, 舉例而言,可將一塊金屬利用電腦數位控制(CNC)切削成 所需結構。之後,利用一第二製程處理在切削後的元件上 形成紋理表面。舉例而言,表面紋理加工處理可包括研磨、 珠喷沙或拋光、或上述處理之組合。在一情形中,欲形成 5In processing substrates such as semiconductor wafers and displays, a substrate is placed in a processing chamber and exposed to an energized gas to deposit or etch material on the substrate. During this process, processing residues are created and may deposit on the inner surface of the processing chamber. For example, in a sputter deposition process, a material deposited by a target to be deposited on a substrate is also deposited on the surface of other components in the processing chamber, such as a deposition ring, a shadow ring, or a chamber wall. Lining and focusing ring. During subsequent processing cycles, the deposited processing residue may "peel" from the surface of the processing chamber and fall and contaminate the substrate. In order to reduce the contamination of the substrate by the processing residues, the surface of the components in the processing chamber can be textured. The treatment residue is adsorbed to the textured surface and the processing residue can be inhibited from flaking and contaminating the substrate in the processing chamber. Traditionally, components having textured surfaces have been fabricated in a multi-step process. In the first process step, an external or integral structure of the component is fabricated. For example, a piece of metal can be cut into a desired structure by computer numerical control (CNC). Thereafter, a textured surface is formed on the cut component by a second process. For example, the surface texturing process can include grinding, bead blasting or polishing, or a combination of the above. In one case, want to form 5

200813248 紋理表面’可藉由將一電磁能光束導向至 上’以形成可供處理沉積物良好吸附的凹 表面之一實施例為一 Lavacoat™表面, Popiolkowski等人擁有之美國專利公告# 號(2003年9月18曰公告,2002年3月1 Popiolkowski等人擁有之美國專利案6,81: 11月2日核准)’此處將二文獻整體納入本 LavacoatTM表面至少包含凹陷及突起,其 吸附至該處以便在基材處理過程中減低基; 然而,用來製造紋理元件之傳統製程 為需要多重製裎步驟才能形成該元件及其 成本阻撓了紋理元件之大量實作,即便該 處理上之優點。傳統製造製程之成本至少 些製程中所用之複雜的多步驟製程程序, 設備。舉例而言,元件製造機械,例如產 儀器,非常昂責且f能大幅增加該紋理元 當用於整修表面紋理元件之洗淨製程 後腐蝕該元件時,元件之製造時間及成本 的問題。一旦殘餘物已累積在紋理元件上 一洗淨處理以移除殘餘物,並整修該元件 舉例而言,以至少包含HN〇3或HF之溶液 件最終會腐钱元件之紋理表面,而通常需 件來取代該腐蝕之元件。因此,製造新紋 本會不利地增加操作處理室之相關成本。 一元件之一表面 陷及突起。此一 其可見於,如 ^ 2003-0173526 3曰申請);以及 2,471 號(2004 年 文中作為參照。 可供處理殘餘物 之污染。 通常很昂貴,因 紋理表面。製造 元件提供了許多 部份肇因於在這 以及昂貴的製造 生電磁能光束之 件之製造成本。 在數個洗淨循環 則成為更進一步 時,通常會執行 以供重新使用。 重複洗淨紋理元 要以新製成之元 理表面元件之成 6200813248 Texture surface 'can be formed by directing an electromagnetic energy beam onto the top' to form a concave surface that can be well adsorbed by the deposit. An embodiment is a LavacoatTM surface, US Patent Publication #, Popiolkowski et al. September 18, Announcement, March 2002, 1 filed by Popiolkowski et al., US Patent No. 6,81: Approved November 2, 'The entire document is incorporated herein. The surface of the LavacoatTM contains at least depressions and protrusions that are adsorbed to the In order to reduce the base during substrate processing; however, the conventional process used to fabricate the textured component is a multi-practice process that requires multiple fabrication steps to form the component and its cost obstructs a large number of implementations of the textured component, even with this processing advantage. The cost of a traditional manufacturing process is at least the complex multi-step process, equipment used in the process. For example, component manufacturing machinery, such as manufacturing equipment, is very cumbersome and can greatly increase the manufacturing time and cost of the stencil when it is used to refurbish the surface texture component after etching the component. Once the residue has accumulated on the textural component, a cleaning process is performed to remove the residue, and the component is refurbished, for example, a solution containing at least HN〇3 or HF will eventually rot the textured surface of the component, usually Replace the corroded component. Therefore, the manufacture of new patterns can disadvantageously increase the associated costs of operating the processing chamber. One of the components has a surface that is trapped and protruded. This can be seen in, for example, ^ 2003-0173526 3曰 application; and 2,471 (referred to as the reference in 2004. It can be used to treat the contamination of residues. It is usually expensive due to the textured surface. Many parts are produced by the manufacturing components. Because of the cost of manufacturing the parts of the electromagnetic beam that are expensive and expensive to manufacture. When several cleaning cycles become further, they are usually executed for reuse. The repeated cleaning of the texture elements is done in a new form. The formation of surface components 6

200813248 因此,需要提出一種製造具有紋理之處理室元件 法,其相較於傳統製造製程更為廉價且有效率。更需 出一具有可供處理殘餘物良好吸附之紋理表面的元件 【實施方式】 一基板處理室至少包含可用以在一能量化氣體中 一基板的多個元件。該等元件之其中一或多者包含一 表面,使得在基板處理過程中產生之處理沈積物能夠 至該元件表面,以減低處理之基板受處理沈積物之污 吸附至處理室元件之紋理表面的處理沈積物可包括含 之沈積物,例如包含下列至少一者之沈積物:鈕、氮化 鈦、氣化鈦、铭、銅、鶴、及氮化鎢。 所選處理室元件22之紋理表面20以及元件本身 型係藉由由一種適用於紋理表面元件之流動形成裝置 程來形成的,例如,第1A及1B圖中所示之裝置與製 該流動形成裝置對一預型體24施加一壓力,以便將該 體之材料塑性變形並流過一心軸26,以提供元件22 的整體外型。可依需要來調整心軸 2 6,以便在與心幸 接觸的預型體24之表面20上形成一預定紋理樣式。 而言,心軸2 6可能包含一紋理表面2 8。在所施加之 下,元件材料之塑性變形可模塑該預型體24之表面 以符合心軸表面2 8之紋理,因此可將至少一部份的心 面樣式轉移至最終處理室元件22。藉由提供一種特製 以創造所需表面紋理樣式3 4之心轴2 6,流動形成製 的方 要提 處理 紋理 吸附 染。 金屬 钽、 之外 及製 預型 所需 由2 6 舉例 壓力 20, 轴表 成用 程可 7200813248 Therefore, there is a need to provide a method of fabricating a textured chamber component that is less expensive and efficient than conventional manufacturing processes. There is a further need for an element having a textured surface that is well adhered to the processing residue. [Embodiment] A substrate processing chamber contains at least a plurality of elements that can be used in a substrate in an energized gas. One or more of the elements comprise a surface such that processing deposits generated during substrate processing can be applied to the surface of the element to reduce contamination of the treated substrate by the treated deposit to the textured surface of the processing chamber element. The treatment deposit may comprise a deposit comprising, for example, a deposit comprising at least one of the following: a button, titanium nitride, titanium carbide, ingot, copper, crane, and tungsten nitride. The textured surface 20 of the selected process chamber component 22 and the component itself are formed by a flow forming device suitable for use with textured surface elements, such as the apparatus shown in Figures 1A and 1B, and the formation of the flow. The device applies a pressure to a preform 24 to plastically deform the material of the body and flow through a mandrel 26 to provide the overall appearance of the element 22. The mandrel 2 can be adjusted as needed to form a predetermined texture pattern on the surface 20 of the preform 24 that is in contact with the skin. In other words, the mandrel 26 may include a textured surface 28 . Under application, plastic deformation of the component material can mold the surface of the preform 24 to conform to the texture of the mandrel surface 28 such that at least a portion of the core pattern can be transferred to the final processing chamber component 22. By providing a special mandrel to create the desired surface texture pattern 3 4 of the mandrel 2 6, the flow forming method is to deal with the texture adsorption. Metal 钽, exterior and prefabrication required 2 2 Example Pressure 20, Axis Forming Process 7

200813248 有效並反覆形成不僅具有所需之整體外型且亦有所需 面紋理樣式34的元件22。 預型體24具有一預先選擇之尺及外型,該外型可 所需之最終元件2 2。適用於一流動形成製程的預型體 可以是,例如一圓錐形、圓柱形、似管狀及其他形狀 可在心軸26上模塑並順形之。傳統上,預型體具有圓 稱的軸,該軸和心軸26之對稱軸對齊。預型體24之 係製造得夠厚,因而在經過流動形成製程所造成之塑 形後,元件22之壁能夠得到理想之最終厚度。舉例而 預型體壁36之厚度比元件壁厚度多出一計算量,舉 言,至少5 %,以達到最終元件2 2之壁的理想最終厚 預型體24係由一具有相對較高延展性之金屬所製成, 在壓力下塑性變形,且實質上不會造成金屬之破裂 痕。合適的金屬可至少包含,如下列至少一者:銘、 不鏽鋼、鈦、及相關合金。形成預型體2 4之方法可包 壓成型、沖壓成型、CNC切削、壓型加工、以及習知 人士已知之其他金屬外型製造方法。 在流動形成製程中,預型體24至少包含一内表面 其可貼附至少、一部份的心軸26之紋理表面28,且可 於心轴26之表面28上。心軸26為一流動形成裝置 一元件,該流動形成裝置52至少包含適用於元件22 動形成的其他部份。預型體24之第一端40可能是封 半封閉端,其可由一軸承5 6和/或尾座4 2握持,該 5 6和/或尾座4 2能夠施加一液壓以便將預型體2 4 之表 形成 外型 ,其 形對 壁36 性變 言, 例而 度。 其可 或裂 銅、 括深 技藝 丨20, 放置 52的 之流 閉或 軸承 :持在 8 200813248 適當位置。心軸26通常會繞其縱軸44旋轉,舉例而言, 藉由一馬達(此處未顯示)來同步旋轉心軸26與預型·體 24。可將一加壓裝置46,例如壓力滾輪48,作用於預型體 24之一外表面5 0上,以將預型體材料塑性變形並沿著心 軸2 6之表面28的軸向流動。200813248 is effective and repetitive to form an element 22 that not only has the desired overall shape but also the desired surface texture pattern 34. Preform 24 has a pre-selected ruler and shape that can be used with the desired final element 22. Preforms suitable for use in a flow forming process may be, for example, a conical, cylindrical, tubular, and other shape that may be molded and conformed to the mandrel 26. Traditionally, the preform has a nominal axis that is aligned with the axis of symmetry of the mandrel 26. The preform 24 is made thick enough to provide the desired final thickness of the wall of the component 22 after being shaped by the flow forming process. For example, the thickness of the preform body wall 36 is greater than the thickness of the component wall by a calculated amount, in other words, at least 5% to achieve the desired final thickness of the wall of the final component 22. The preform 24 has a relatively high elongation. Made of metallic metal, plastically deformed under pressure, and does not substantially cause cracks in the metal. Suitable metals can include at least one of the following: Ming, stainless steel, titanium, and related alloys. The method of forming the preform 24 can be by compression molding, press forming, CNC cutting, press forming, and other metal forming methods known to those skilled in the art. In the flow forming process, the preform 24 includes at least an inner surface to which a textured surface 28 of at least a portion of the mandrel 26 can be attached and which can be applied to the surface 28 of the mandrel 26. The mandrel 26 is an element of a flow forming device, and the flow forming device 52 includes at least other portions suitable for the dynamic formation of the element 22. The first end 40 of the preform 24 may be a semi-closed end that may be held by a bearing 56 and/or a tailstock 42 that is capable of applying a hydraulic pressure to pre-form The shape of the body 2 4 forms an appearance, and its shape is opposite to the wall 36. It can be either split copper or deep-skinned 丨20, placed in 52 closed or bearings: held in place at 8 200813248. The mandrel 26 will typically rotate about its longitudinal axis 44, for example, by rotating a mandrel 26 and a preform body 24 by a motor (not shown). A pressurizing means 46, such as a pressure roller 48, can be applied to the outer surface 50 of one of the preforms 24 to plastically deform the preform material and flow axially along the surface 28 of the mandrel 26.

在所示具體實施例中,壓力滾輪48朝向預型體24之 第一端40移動,以將預型體材料朝向遠離預型體24之第 一端4 0的方向按壓而在心轴2 6上移動。施加高於其屈服 強度之壓力下,壓縮並塑形該預型體材料,以沿著心軸26 之表面2 8的軸向流動該材料。因此,廢力滾輪4 8藉由沿 著心軸2 6流動該預型體材料,以減低預型體2 4之壁3 6 的厚度並延長預型體24之壁3 6的長度。施加至外表面5 0 之壓力夠高足以塑性變形並流動該預型體材料,且實質上 不會造成材料之破裂或裂痕。所施加之壓力會隨著正在形 成之材料特性而改變。心軸及滾輪係相距一界定距離而作 配置,該距離可為恆定距離或可變距離,以建立該完成部 份之内及外表面間的關係。在一種態樣中,壓力滾輪48 可至少包含外型為圓形之滾輪,其適合藉由一馬達(此處 未顯示)以與心軸2 6之旋轉方向平行或反平行之方向來旋 轉之,且因此可在預型體24之外表面5 0上施加一徑向力。 壓力滾輪48亦可至少包含一前斜邊54,其可在預型體24 之外表面5 0上施加一轴向力,以驅使預型體材料於軸向方 向上經過心軸26之表面28。在一態樣中,在預型體24之 週邊上間隔放置複數個壓力滾輪4 8,且該等壓力滾輪4 8 9 200813248 亦可軸向及徑向地相間隔,以便在預型體外表面5 0之複數 個不同區域上施加壓力。In the particular embodiment shown, the pressure roller 48 is moved toward the first end 40 of the preform 24 to press the preform material in a direction away from the first end 40 of the preform 24 on the mandrel 26. mobile. The preform material is compressed and shaped under pressure applied above its yield strength to flow the material along the axial direction of the surface 28 of the mandrel 26. Therefore, the waste roller 4 8 flows the preform material along the mandrel 26 to reduce the thickness of the wall 36 of the preform 24 and extend the length of the wall 36 of the preform 24. The pressure applied to the outer surface 50 is sufficiently high to plastically deform and flow the preform material without substantially causing cracking or cracking of the material. The applied pressure will vary with the material properties being formed. The mandrel and the roller are arranged at a defined distance, which may be a constant distance or a variable distance to establish a relationship between the inner and outer surfaces of the finished portion. In one aspect, the pressure roller 48 can include at least a circular roller that is adapted to be rotated in a direction parallel or anti-parallel to the direction of rotation of the mandrel 26 by a motor (not shown). And thus a radial force can be applied to the outer surface 50 of the preform 24. The pressure roller 48 can also include at least a front bevel 54 that exerts an axial force on the outer surface 50 of the preform 24 to urge the preform material through the surface 28 of the mandrel 26 in the axial direction. . In one aspect, a plurality of pressure rollers 4 8 are spaced apart on the periphery of the preform 24 and the pressure rollers 4 8 9 200813248 can also be axially and radially spaced apart so as to be on the outer surface 5 of the preform. Apply pressure to a plurality of different areas of 0.

該用於流動形成製程之心軸 2 6可根據意願加以調整 以提供最終流動形成元件 22所需的整體外型及表面紋理 樣式3 4。舉例而言,心軸2 6可至少包含適用於元件壁3 6 之所需長度的軸長。心轴26亦可視需要而包含紋理表面 28,其適合形成一元件22之内表面20所需的表面紋理樣 式3 4。舉例而言,心軸2 6可至少包含一紋理表面2 8,其 具有一心轴表面樣式58,該樣式為處理室元件22所需之 表面紋理樣式3 4的倒像或鏡像。形成於元件2 2之表面2 0 上的表面紋理樣式 3 4為在流動形成製程過程中施加壓力 所產生的結果,該壓力將預型體材料按壓於心軸表面 28 上,使得元件22之内表面實質上呈現心軸表面2 8之輪廓。 舉例而言,對於包含浮凸突起60a及凹陷60b之心軸表面 2 8,可將預型體材料按壓並流動至心轴表面 2 8中之凹陷 6 0b内,以在元件22之表面上形成包含突起30b在内的相 對應倒像特徵3 0包含的,如第2圖中所示般。該預型體材 料亦可沿著心軸表面2 8上之突起6 0 a流動,以在元件表面 20中形成包含凹陷30的相對應倒像特徵30。可根據所需 之表面紋理樣式34來選擇提供於心軸表面28的特徵60, 且其可包含例如突起60a及凹陷60b,該等突起60a及凹 陷60b包含下列至少一者:***、孔洞、波紋(ridge)、凹 槽、及元件表面20可能需要之其他特徵。在一態樣中,心 軸26甚至包含在該心軸表面28 —區域内之突起60a及凹 10 200813248 陷6 0b的尺寸與分佈(spacing)不同於該心軸表面28 —不同 區域中的尺寸及分佈。在心轴26上流動形成元件22允許 形成具有預定尺寸及整體外型之元件22的表面20,且可 在該元件 22之表面上同時形成一所需之表面紋理樣式 34,因此提供了一種有效且改良之處理室元件 22製造方 式。The mandrel 26 for the flow forming process can be adjusted as desired to provide the overall appearance and surface texture pattern 3 required for the final flow forming element 22. For example, the mandrel 26 can include at least an axial length suitable for the desired length of the component wall 36. The mandrel 26 may also include a textured surface 28, as desired, which is suitable for forming the desired surface texture pattern 34 of the inner surface 20 of an element 22. For example, the mandrel 26 can include at least one textured surface 2 8 having a mandrel surface pattern 58 that is an inverted or mirror image of the desired surface texture pattern 34 of the process chamber component 22. The surface texture pattern 34 formed on the surface 20 of the element 2 2 is the result of applying pressure during the flow forming process that presses the preform material against the mandrel surface 28 such that within the element 22 The surface substantially presents the contour of the mandrel surface 28. For example, for the mandrel surface 28 comprising the relief protrusion 60a and the recess 60b, the preform material can be pressed and flow into the recess 60b in the mandrel surface 28 to form on the surface of the element 22. The corresponding inverted image feature 30 including the protrusion 30b is included as shown in FIG. The preform material may also flow along the protrusions 60a on the mandrel surface 28 to form a corresponding inverted image feature 30 comprising recesses 30 in the component surface 20. The features 60 provided on the mandrel surface 28 can be selected according to the desired surface texture pattern 34, and can include, for example, protrusions 60a and recesses 60b that include at least one of the following: ridges, holes, ripples Ridges, grooves, and other features that component surface 20 may require. In one aspect, the mandrel 26 even includes the protrusions 60a and the recesses 10 200813248 in the area of the mandrel surface 28 - the size and spacing of the recess 60b is different from the size of the mandrel surface 28 - in different regions And distribution. Flowing the forming element 22 on the mandrel 26 allows the surface 20 of the element 22 having a predetermined size and overall shape to be formed, and a desired surface texture pattern 34 can be simultaneously formed on the surface of the element 22, thus providing an effective and Improved process chamber component 22 manufacturing.

在一態樣中,藉由在一具有交錯之突起62a及凹陷62上 的心軸26上流動形成一元件22以提供一種改良之表面紋 理樣式34,,該心轴例如第3圖中所示。該交錯之突起62a 及凹陷62b在元件22之表面20中形成一倒像表面紋理樣 式34,該倒像表面紋理樣式34包含相對應突起64a及凹 陷6 4b,以允許將基板1 04處理過程中產生之處理殘餘物 吸附至紋理元件2 2之表面2 0,以減低殘餘物造成之基板 104之污染。心軸表面28中之突起62a可至少包含,舉例 而言,墩丘或***,其高度由心軸表面2 8之一平均表面高 度A測量起,至少約為0.005至0.050英吋。突起62a在 其二分之一高度處的寬度可介於約0.07至0.070英吋間。 心轴表面28之凹陷62b的深度包含低於該平均表面高度A 至少約0.005至0.050英吋,且凹陷62b在其二分之一深 度處的寬度介於約〇 . 002至0.1 3 0英吋間。在流動形成元 件22之表面20中形成之突起64b及凹陷64a的尺寸實質 上相對應於心軸突起62a及凹陷62b之尺寸。 在一態樣中,紋理表面2 8至少包含一實質上欠缺銳角 及銳邊的表面橫切面,例如第3圖中所示者。該正弦曲線 11 200813248In one aspect, an element 22 is formed by flowing over a mandrel 26 having staggered projections 62a and recesses 62 to provide an improved surface texture pattern 34, such as shown in FIG. . The staggered protrusions 62a and recesses 62b form an inverted image surface pattern 34 in the surface 20 of the element 22, the inverted image surface pattern 34 including corresponding protrusions 64a and recesses 64b to allow substrate 104 processing during processing The resulting processing residue is adsorbed to the surface 20 of the texturing element 2 2 to reduce contamination of the substrate 104 caused by the residue. The protrusion 62a in the mandrel surface 28 can comprise, for example, a mound or ridge having a height of at least about 0.005 to 0.050 inches as measured by an average surface height A of the mandrel surface 28. The width of the projection 62a at its one-half height may be between about 0.07 and 0.070 inches. The depth of the recess 62b of the mandrel surface 28 comprises at least about 0.005 to 0.050 inches below the average surface height A, and the width of the recess 62b at a half of its depth is between about 〇. 002 to 0.1 3 0 inches. between. The size of the projection 64b and the recess 64a formed in the surface 20 of the flow forming member 22 substantially corresponds to the size of the mandrel projection 62a and the recess 62b. In one aspect, the textured surface 28 includes at least a surface cross-section that is substantially lacking an acute angle and a sharp edge, such as shown in FIG. The sine curve 11 200813248

橫切面至少包含一類似正弦波之橫切面輪廓,且具有根據 所需之元件特性而選出的正弦曲線橫切面之波長及振幅。 該正弦曲線橫切面提供一種平滑變化之表面並具有交錯之 突起62a及凹陷62b以增進吸附處理殘餘物,並減低沈積 殘餘物可能因尖銳或突然表面轉換而發生之裂痕或斷裂。 合適的正弦曲線表面橫切面中,相鄰突起6 2 a間之波峰至 波峰距離介於約 0.0 1 5至 0 · 1 8 0英吋,且及振幅介於約 0.005至0.050英吋。在一態樣中,心轴表面28至少包含 一第一正弦曲線橫切面與一第二正弦曲線橫切面,該第一 正弦曲線橫切面圍繞包覆著至少一部份的該心軸 26之軸 44,如第3圖中所示,該第二正弦曲線橫切面沿著該心軸 26之軸44縱向延伸,如第1圖中所示。在理想的情形中, 紋理表面2 8實質上現欠缺銳角66以及銳邊,且取而代之 的是其實質上包含圓角66及圓邊。 亦可特製地設計心軸2 6,用以形成複雜且實質上非線 性之表面紋理樣式34,以便在基板104之處理中提供改良 之結杲。此種複雜之表面樣式使得在流動形成製程之後, 難以自心軸26移除該流動形成元件22。舉例而言,對於 不允許元件2 2由心軸2 6滑動或扭轉之表面樣式3 4,自心 軸26移開元件22就非常具有挑戰性。此種本身不易將元 件22由心軸26扭轉或滑動的表面樣式34係包含交錯之突 起6 4 b及凹陷 6 4 a的表面樣式3 4,因為心軸及元件突起 62 a、64 b可鎖定至心軸及元件凹陷62b、64a中。一般而 言,表面樣式34若未包含延伸至元件22至少一端40的線 12 200813248The cross section includes at least a cross-sectional profile similar to a sine wave and has a wavelength and amplitude of a sinusoidal cross-section selected according to the desired component characteristics. The sinusoidal cross-section provides a smoothly varying surface and has staggered projections 62a and recesses 62b to enhance the adsorption process residue and to reduce cracking or fracture of the deposit residue that may occur due to sharp or sudden surface transitions. In a suitable sinusoidal cross-section, the peak-to-crest distance between adjacent protrusions 6 2 a is between about 0.015 to 0 · 18 0 inches and the amplitude is between about 0.005 and 0.050 inches. In one aspect, the mandrel surface 28 includes at least a first sinusoidal cross-section and a second sinusoidal cross-section that surrounds at least a portion of the axis of the mandrel 26 44. As shown in FIG. 3, the second sinusoidal transverse plane extends longitudinally along the axis 44 of the mandrel 26, as shown in FIG. In the ideal case, the textured surface 28 is substantially lacking the acute angle 66 and the sharp edges, and instead it substantially comprises the fillet 66 and the rounded edges. The mandrel 26 can also be specially designed to form a complex and substantially non-linear surface texture pattern 34 to provide improved crusting in the processing of the substrate 104. This complex surface pattern makes it difficult to remove the flow forming element 22 from the mandrel 26 after the flow forming process. For example, for a surface pattern 34 that does not allow element 22 to be slid or twisted by mandrel 26, removal of element 22 from mandrel 26 is very challenging. This surface pattern 34, which itself is not easily twisted or slid by the mandrel 26, comprises a staggered projection 6 4 b and a surface pattern 34 of the recess 6 4 a because the mandrel and the element projections 62 a, 64 b can be locked. It is in the mandrel and element recesses 62b, 64a. In general, surface pattern 34 does not include a line that extends to at least one end 40 of element 22 12 200813248

性或螺旋凹陷3 0a,則將其自心軸26上移除時都可能面臨 挑戰。在一態樣中,藉著使心軸26可至少部份可折疊,而 適用於製造此種複雜表面樣式,使得在流動形成製程後, 可輕易自心軸26移除元件22。舉例而言,心軸26可至少 包含一空心内部區段7 0,在流動形成製程之後,可將心軸 26之部份折疊於該空心内部區段70中,以提供一種較小 之心轴圓周並改善由心軸26移除元件22之簡易性。舉例 而言,可將心軸26鉸接或以其他方式建構,而使得心軸可 在其本身之上收折。在又另一態樣中’心軸2 6之表面2 8 上的突起60a,例如正弦曲線橫切面突起62a,能夠在流動 形成之後,將之收回至心軸之空心内部區段中,以便由心 軸表面2 8「鬆脫」元件2 2。因此,該改良之心軸2 6得以 在元件22上形成實質欠缺沿著内元件22之内表面20長度 延伸之線性或螺旋凹陷的複雜表面樣式3 4,且不限於實質 線形或螺旋之表面樣式。 在另一態樣中,可籍由一種適當熱源加熱該元件,而 將該流動形成元件22自心軸26移除。元件22之膨脹至足 以使得其内表面20脫離心軸26上之突起64b與凹陷64a 的高度,而呈解開狀態,而得以由心軸26移除元件22。 所需之熱量隨著心軸26上突起64b及凹陷64a之深度以及 元件材料之熱脹係數而不同。 第4圖繪示一種由流動形成製程所製造之元件22的實 施例。元件2 2至少包含一遮罩1 2 0,舉例而言其適用於一 沈積室106。由一預型體24形成元件22,預型體24至少 13 200813248 包含圓柱形側壁3 6,可在流動形成製程中將圓柱形側壁3 6 按壓至所需之遮罩壁長度及厚度。具有遮罩120之元件22 的内表面20包含所需之表面紋理樣式34 (此處未顯示), 以供處理殘餘物吸附至該處以減低對已處理基板1 04的污 染。因此,該流動形成方法能夠在一單一處理步驟中,提 供具有所需之整體外型及表面紋理之元件22,因而提供了 一種更有效率且可重複形成元件22之方式。Sexual or spiral depressions 30a can be challenged when removed from the mandrel 26. In one aspect, it is suitable to fabricate such a complex surface pattern by making the mandrel 26 at least partially foldable so that the element 22 can be easily removed from the mandrel 26 after the flow forming process. For example, the mandrel 26 can include at least one hollow inner section 70. After the flow forming process, a portion of the mandrel 26 can be folded into the hollow inner section 70 to provide a smaller mandrel. The circumference and the ease of removal of the component 22 by the mandrel 26 are improved. For example, the mandrel 26 can be hinged or otherwise constructed such that the mandrel can be folded over itself. In yet another aspect, the protrusion 60a on the surface 28 of the mandrel 26, such as the sinusoidal cross-sectional protrusion 62a, can be retracted into the hollow inner section of the mandrel after the flow is formed, so that The mandrel surface 28 "releases" the element 2 2 . Thus, the modified mandrel 26 is capable of forming a complex surface pattern 34 on the element 22 that is substantially lacking in linear or spiral depressions extending along the length of the inner surface 20 of the inner member 22, and is not limited to a substantially linear or spiral surface pattern. . In another aspect, the element can be heated by a suitable heat source and the flow forming element 22 is removed from the mandrel 26. The element 22 is expanded to a sufficient extent that its inner surface 20 is disengaged from the height of the projections 64b and recesses 64a on the mandrel 26, and the element 22 is removed by the mandrel 26. The amount of heat required varies with the depth of the protrusions 64b and recesses 64a on the mandrel 26 and the coefficient of thermal expansion of the component material. Figure 4 illustrates an embodiment of an element 22 fabricated by a flow forming process. Element 2 2 includes at least one mask 120 which is suitable for use in a deposition chamber 106, for example. The element 22 is formed from a preform 24 which comprises at least 13 200813248 comprising a cylindrical side wall 36 for pressing the cylindrical side wall 36 to the desired mask wall length and thickness during the flow forming process. The inner surface 20 of the element 22 having the mask 120 contains the desired surface texture pattern 34 (not shown here) for the treatment residue to be adsorbed there to reduce contamination of the treated substrate 104. Thus, the flow forming method provides the element 22 with the desired overall appearance and surface texture in a single processing step, thus providing a more efficient and repeatable means of forming the element 22.

將由流動形成方法所形成之不同態樣的具紋理表面 20元件22用於一基板處理室106中,第5圖中顯示了基 板處理室的示範性實施例。處理室1 〇 6為一多處理室平台 (此處未顯示)之一部份,多處理室平台具有由一機械手 臂機構互相連結之處理室所構成的群集設備,一機械手臂 機構可在該等處理室106之間輸送基板104a。在所示之實 施例中,處理室1 06至少包含一濺鍍沈積室,亦稱為一種 物理氣相沈積或PVD處理室,其能夠將材料濺鍍沈積於一 基板1 04a上,例如下列之一或更多者材料:鈕、氮化鈕、 鈦、氮化鈦、銅、鎢、及氮化鎢、及鋁等。處理室106至 少包含外罩壁118其可圈圍出一處理區109且外罩壁118 包括多個側壁164、一下壁166及一頂壁168。可在該等側 壁1 64及頂壁1 6 8間放置一支撐環1 3 0,以支撐頂壁1 6 8。 其他處理室壁可包括一或多個遮罩1 2 0以便將外罩壁11 8 與濺鍍環境隔絕開來。 處理室1 06至少包含一基板支撐件1 1 4,以支撐濺鍍 沈積室106中之基板。基板支撐件114可電子漂浮或可包 14A different aspect of the textured surface 20 element 22 formed by the flow forming method is used in a substrate processing chamber 106, and an exemplary embodiment of a substrate processing chamber is shown in FIG. The processing chamber 1 〇 6 is part of a multi-processing chamber platform (not shown) having a clustering device formed by a processing chamber interconnected by a robotic arm mechanism, a robotic arm mechanism being The substrate 104a is transported between the processing chambers 106. In the illustrated embodiment, the processing chamber 106 includes at least a sputtering deposition chamber, also referred to as a physical vapor deposition or PVD processing chamber, capable of depositing material onto a substrate 104a, such as the following One or more materials: button, nitride button, titanium, titanium nitride, copper, tungsten, and tungsten nitride, and aluminum. The processing chamber 106 includes at least a housing wall 118 that encloses a processing zone 109 and the housing wall 118 includes a plurality of side walls 164, a lower wall 166, and a top wall 168. A support ring 130 can be placed between the side walls 1 64 and the top wall 168 to support the top wall 168. Other processing chamber walls may include one or more masks 120 to isolate the outer wall 11 8 from the sputtering environment. The processing chamber 106 includes at least a substrate support member 112 to support the substrate in the sputtering deposition chamber 106. The substrate support 114 can be electronically floated or can be wrapped.

200813248 含一電極1 70,其可由例如RF電源供應等電源供 進行偏壓。基板支樓件1 14亦可支撐其他晶圓1 〇4 可移動快門片(shutter disc) 104b,當基板1〇4a不存 其可保護支撐件114之上表面134。在操作時,經 處理室106之一側壁164中的一基板載入口(此處^ 將基板104a引入處理室1〇6中,並將基板i〇4a放 撐件114上。在輸送基板i〇4a進出處理室1〇6之過 可由支撐升降伸縮裝置來抬高或低該支撐件114, 用一升降指部組件(此處未顯示)將基板抬高或降 撐件1 1 4上。 支撐件11 4亦可包含一或多個環,例如一蓋環 沈積環128,其可覆蓋支撐件114之上表面134的 部份,以抑制支撐件114之腐蝕。在一態樣中,沈稿 至少部份環繞該基板1 〇 4 a,以保護支撐件丨丨4未 1 〇4a所覆蓋住的部份。蓋環i 26環繞並覆蓋至少一 沈積環1 2 8之’且可減低粒子在沈積環1 2 8及下方 114二者上之沈積。 經由一氣體運送系統1 1 2將一處理氣體,例如 氣體’導入處理室1 〇 6中,氣體運送系統i〗2包括 氣體供應’其包含一或多個氣體來源丨7 4,該等氣 174個別可饋送至一導管176,該導管176具有一氣 控制闕1 7 8,例如一質量流動控制器,以便在其中 設定流動速率之氣體。導管丨7 6可將氣體饋送至一 管(此處未顯示),氣體可在其中混合以形成一所需 應 172 例如一 在時, 由位於 l顯示) 置於支 程中, 且可利 低至支 126或 至少一 環1 2 8 被基板 部份的 支撐件 一濺鐘 一處理 體來源 體流動 傳送一 混合歧 之處理 15 200813248 氣體組成。該混合歧管可饋送氣體至一氣體分配器18〇其 在處理室106中具有一或多個氣體出口 182。該處理氣體 可包含一惰性乳體,例如氬或氙,其能夠積極衝擊一靶材 並自靶材濺鍍出靶材材料。處理氣體可亦至少包含一反應 性氣體,例如下列之一或更多者:含氧氣體及一含氮氣體, 其能约和漉鍍之材料反應,以便在基板1 〇4a上形成一膜 層。可經由一排氣裝置122將使用過之處理氣體及副產品 由處理室106排出,該排氣裝置包括一或多個排氣埠丨84 其可接收使用過之處理氣體並將該使用過之氣體傳送到一 排氣導管1 86,其中有一節流闊1 8 8用以控制處理室1 〇6 中氣體之塵力。排氣導管186可饋入一或多個排氣泵1 9 〇。 傳統上,將處理室1 〇6中之濺鍍氣體的壓力設定為低於大 氣壓程度。 濺鍍處理室106至少更包含一濺鍍靶材124,靶材ι24 面對基板 1 〇4a之一表面i 05且至少包含將濺鍍至基板 1 〇 4 a上之材料,材料例如,下列至少一者:組、氮化组。 可藉由一環狀絕緣環132將靶材I24與處理室1〇6電性隔 離開來’並該靶材1 24係連接至一電源供應1 92。靶材1 24 叮至少包含~靶材背襯板,該靶材背襯板具有暴露於處理 室106中之 士 〜乾材邊緣125。藏鍍處理室106亦具有一遮 罩12 〇以枝 、 保瘦處理室1 〇 6之一壁1 1 8不致接觸錢鍍之材 牙斗。3^暴 Λ … 120可至少包含一似壁圓柱形外型,其具有上方 下方遮革部份120a、120b,玎防護處理室106之上方及 下方區。 一在第4圖所示之實施例中,遮罩120具有褒配 16 200813248200813248 includes an electrode 1 70 that can be biased by a power source such as an RF power supply. The substrate support member 14 can also support other wafers 1 〇 4 movable shutters 104b that protect the upper surface 134 of the support member 114 when the substrate 1 〇 4a is absent. In operation, a substrate carrying inlet in one of the side walls 164 of the processing chamber 106 (wherein the substrate 104a is introduced into the processing chamber 1〇6, and the substrate i〇4a is placed on the support member 114. On the transport substrate i The raft 4a can be raised or lowered by the support lifting and lowering device to raise or lower the support member 114, and the substrate can be raised or lowered by a lifting finger assembly (not shown). The support member 11 4 can also include one or more rings, such as a cover ring deposition ring 128 that can cover portions of the upper surface 134 of the support member 114 to inhibit corrosion of the support member 114. In one aspect, the sink The draft at least partially surrounds the substrate 1 〇 4 a to protect the portion of the support member 4 not covered by the cover 。 4a. The cover ring i 26 surrounds and covers at least one deposition ring 1 2 8 and reduces particles Depositing on both the deposition ring 1 2 8 and the lower portion 114. A process gas, such as a gas, is introduced into the processing chamber 1 〇6 via a gas delivery system 1 1 2, the gas delivery system i 2 including the gas supply 'its Containing one or more gas sources 丨 7.4, which may be individually fed to a conduit 176, the conduit 1 76 has a gas control 阙17, such as a mass flow controller, to set a flow rate of gas therein. The conduit 丨76 can feed the gas to a tube (not shown here) where the gas can be mixed to form A required 172, for example, at the time, is displayed in the branch, and can be lowered to the branch 126 or at least one ring 1 2 8 is supported by the substrate portion, a splashing clock, a processing body source flow Transmitting a mixture of treatments 15 200813248 Gas composition. The mixing manifold can feed gas to a gas distributor 18 having one or more gas outlets 182 in the processing chamber 106. The process gas may comprise an inert emulsion, such as argon or helium, which is capable of actively impacting a target and sputtering the target material from the target. The process gas may also comprise at least one reactive gas, such as one or more of the following: an oxygen-containing gas and a nitrogen-containing gas, which are capable of reacting with the rhodium-plated material to form a film on the substrate 1 〇 4a. . The used process gas and by-products may be discharged from the process chamber 106 via an exhaust device 122, the exhaust device including one or more exhaust gases 84 that receive the used process gas and use the used gas It is sent to an exhaust duct 186, which has a flow width of 1 8 8 for controlling the dust force of the gas in the processing chamber 1 〇6. The exhaust conduit 186 can be fed into one or more exhaust pumps 1 9 〇. Conventionally, the pressure of the sputtering gas in the processing chamber 1 〇 6 is set to be lower than atmospheric pressure. The sputtering processing chamber 106 further includes at least a sputtering target 124, the target material ι24 facing a surface i 05 of the substrate 1 〇 4a and containing at least a material to be sputtered onto the substrate 1 〇 4 a, for example, the following One: group, nitride group. The target I24 can be electrically separated from the process chamber 1〇6 by an annular insulating ring 132 and the target 1 24 is connected to a power supply 1 92. The target 1 24 叮 contains at least a target backing plate having a smear-dry material edge 125 exposed to the processing chamber 106. The plating treatment chamber 106 also has a cover 12 〇, and the wall 1 1 8 of the thinning treatment chamber 1 不 6 does not contact the money-plated material. 3^ Storm Λ 120 may include at least one wall-like cylindrical shape having upper and lower visor portions 120a, 120b, above and below the protective treatment chamber 106. In the embodiment shown in Fig. 4, the mask 120 has a matching unit.

至該支撐環130的一上方部份12〇a以及裝至蓋環126 的下方部份120b。亦可提供一夾合裝置遮罩(ciamp shield) 1 4 1,其至少包含一夾環’以便將上方及下方遮罩部 份120a、b夾合在一起。亦可利用替代性遮罩組態,例如 内部及外部遮罩。在一態樣中,電源供應19 2、靶材124 及遮罩1 20之其中一者或多者可作為一能夠能量化該濺鍍 氣體以便自靶材1 24濺擊出材料的氣體能量化器i〗6。相 對於遮罩120,電源供應192可施加一偏壓給靶材124。在 處理室1 06中由所施加之電壓產生的電場能夠能量化該錢 鍍氣體以形成一電漿,該電漿能夠積極衝擊並撞擊靶材 1 2 4以便將材料自把材1 2 4滅鍍下來並轉移到基板丨〇 4 a 上。具有電極170及支撐電極電源供應172的支撐件114 亦可作為氣體能量化器11 6之一部份,其可能量化由乾材 1 24濺擊下來的離子化材料並使之加速朝向基板1 〇4a。此 外’可提出一氣體能量化線圈1 35 ’其係由一電源供應1 9 2 供電且係置於處理室106中,以提供經強化之能量化氣體 特性,例如改良之能量化氣體密度。可由連接至一遮罩i 2 〇 或處理室106中之另一壁的一線圈支撐件137來支撐氣體 能量化線圈1 3 5 〇 可由一控制益1 9 4來控制處理室1 〇 6,該控制器至少 包含:一具有指令集的程式碼,用以操作處理室之多 個元件於該處理室106中處理該基板104a。舉例而言,控 制器1 94可至少包含一基板定位指令集,其可操作基板支 偉件114及基板運輸裝置之一或多者以將基板1〇4a定位於 17 200813248 處理室106中;-氣體流動控制指令集,其可操作流動控 制閥178以設定濺鍍氣體流動至處理室1〇6 •,一氣體壓力 控制指令集’其可操作排氣節流閥丨8 8以維持處理室工% 中之一壓力;一氣體能量化器控制指令集,其可操作氣體 能量化器1 1 6以設定一氣體能量化之電量程度;一溫度控 制指令集,其可用於控制處理室1〇6中之溫度;以及一處 理監控指令集,其可用於監控處理室1〇6中之製程。 具紋理表面20之處理室元件22可至少包含,例如, 氣體運送系統1 1 2 '基板支撐件丨丨4、處理套組丨3 9、氣體 月化态116、處理室外罩壁118及遮罩12〇、或處理室 1〇6之氣體排氣裝置122等不同工藝領域。舉例而言,具 紋理表面20之處理室元件22可包括一·處理室外罩壁 118、一處理室遮罩120、一靶材124、一靶材邊緣125、 一處理套組139之一元件(例如一蓋環126及一沈積環128 之至少一者)、一支撐環1 3 〇、絕緣環i 3 2、一線圈} 3 5、 線圈支撐件137、快門片l〇4b、夾合遮罩141、及一部份 的基板支撐件1 1 4。舉例而言,具紋理表面之元件可包括 應用材料公司之產品編號〇〇2〇 —5〇〇〇7、〇〇2〇 —5〇〇〇8、 0020- 50010 、 0020-50012 、 0020—50013 、 0020-48908 、 0021- 23852 、 0020-48998 、 0020—52149 、 0020-51483 、 0020-49977 、 0020-52151 、 0020-48999 、 0020-48042 及 0190-14818 ’ 來自 Applied Materials, Santa Clara, California。此元件清單僅為例示,且其他元件或來自其他 類型處理室之元件亦可具有紋理表面;因此,本發明不應 18An upper portion 12〇a of the support ring 130 and a lower portion 120b of the cover ring 126 are attached. A caliper shield 141 can also be provided which includes at least one clamp ring </ RTI> to sandwich the upper and lower mask portions 120a, b together. Alternative mask configurations, such as internal and external masks, can also be utilized. In one aspect, one or more of the power supply 19, the target 124, and the mask 120 can be used as a gas that can energize the sputtering gas to splatter the material from the target 122. i〗 6. The power supply 192 can apply a bias to the target 124 relative to the mask 120. The electric field generated by the applied voltage in the processing chamber 106 can energize the money plating gas to form a plasma that can positively impact and strike the target 1 2 4 to extinguish the material from the material 1 2 4 Plated and transferred to the substrate 丨〇 4 a . Support member 114 having electrode 170 and supporting electrode power supply 172 may also be part of gas energizer 116, which may quantify and accelerate the ionized material splashed by dry material 1 24 toward substrate 1 4a. Further, a gas energization coil 1 35 ' can be provided that is powered by a power supply 1 9 2 and placed in the processing chamber 106 to provide enhanced energized gas characteristics, such as improved energized gas density. The gas energizing coil 1 3 5 can be supported by a coil support 137 connected to a mask i 2 or another wall in the processing chamber 106. The processing chamber 1 〇 6 can be controlled by a control benefit 94. The controller includes at least: a code having an instruction set for operating a plurality of components of the processing chamber to process the substrate 104a in the processing chamber 106. For example, the controller 1 94 can include at least one substrate positioning instruction set that can operate one or more of the substrate support member 114 and the substrate transport device to position the substrate 1〇4a in the 17 200813248 processing chamber 106; A gas flow control command set operative to operate the flow control valve 178 to set the sputtering gas flow to the process chamber 1〇6, a gas pressure control command set 'which operates the exhaust throttle valve 丨8 8 to maintain the process chamber One of the pressures in %; a gas energizer control command set that operates the gas energizer 1 16 to set the amount of energy that a gas energizes; a temperature control command set that can be used to control the process chamber 1〇6 The temperature in the middle; and a processing monitoring instruction set that can be used to monitor the process in the processing chambers 1-6. The process chamber component 22 of the textured surface 20 can include, for example, a gas delivery system 1 1 2 'substrate support 丨丨 4, a process kit 丨 39, a gas tempering state 116, a process enclosure wall 118, and a mask 12 〇, or the gas venting device 122 of the treatment chamber 1 不同 6 and other different process areas. For example, the processing chamber component 22 of the textured surface 20 can include a processing enclosure wall 118, a processing chamber mask 120, a target 124, a target edge 125, and a component of the processing kit 139 ( For example, at least one of a cover ring 126 and a deposition ring 128, a support ring 1 3 〇, an insulating ring i 3 2, a coil} 3 5, a coil support 137, a shutter l4b, a sandwich mask 141, and a portion of the substrate support member 1 14 . For example, the component of the textured surface may include the product number of the Applied Materials Company 〇〇2〇—5〇〇〇7, 〇〇2〇—5〇〇〇8, 0020-50010, 0020-50012, 0020-50013 , 0020-48908, 0021- 23852, 0020-48998, 0020-52149, 0020-51483, 0020-49977, 0020-52151, 0020-48999, 0020-48042, and 0190-14818' from Applied Materials, Santa Clara, California. This list of components is merely exemplary, and other components or components from other types of processing chambers may also have textured surfaces; therefore, the present invention should not be

200813248 限於所列或此處所示之元件。 此處參照本發明之某些較佳具體實施例來描述 明;然而亦可能有其他實施例。舉例而言,流動形成 可用於其他類型之應用中,例如,習知技藝人士可輕 解其可作為蝕刻室之元件。亦可利用其他之流動形成 組態,且亦可提出除了此處具體所述之樣式以外的心 面樣式。此外,習知技藝人士可輕易了解到,亦可參 述實施例之參數來運用和本文所述流動形成方法等效 代性步驟。因而,後附申請專利範圍之精神及範圍不 於此處所述之較佳具體實施例的描述。 【圖式簡單說明】 參照闡明本發明實施例的敘述内容、所附申請專 圍以及圖式可進一步了解本發明之上述特徵、態樣、 點。然而,可以理解,這些特徵之每一者通常皆可用 發明中,而不僅限於特定圖式中所繪示之情況,且本 包括這些特徵之任意組合,其中圖式如下: 第1A圖為部份側視剖面圖,繪示一種用以執行 動形成製程之裝置的一具體實施例; 第1 B圖為第1 A圖之裝置在流動形成製程中處於 同位置時的另一視圖; 第2圖為部份側視剖面圖,繪示藉由流動形成製 形成之一種具紋理内表面的元件; 第3圖為部份前視剖面圖,繪示一用於流動形成 本發 元件 易了 裝置 軸表 照所 之替 應限 利範 及優 於本 發明 一流 一不 程所 製程 19 200813248 之具紋理表面的心軸具體實施例; 第4圖為一部份側面圖式,繪示一利用流動形成製程 所形成的遮罩具體實施例;以及 第5圖為一部份側面剖面圖,繪示具有一或更多流動 形成元件之處理室的具體實施例。200813248 Limited to the components listed or shown here. The invention is described herein with reference to certain preferred embodiments of the invention; however, other embodiments are possible. For example, flow formation can be used in other types of applications, for example, those skilled in the art can appreciate that it can be used as an element of an etch chamber. Other flows can also be used to form the configuration, and can also be presented in addition to the styles specifically described herein. Moreover, it will be readily apparent to those skilled in the art that the parameters of the examples can be used to apply the equivalent steps of the flow forming methods described herein. Therefore, the spirit and scope of the appended claims are not to be construed as the description of the preferred embodiments. BRIEF DESCRIPTION OF THE DRAWINGS The above features, aspects, and points of the present invention can be further understood by referring to the description of the embodiments of the invention. However, it is to be understood that each of these features is generally available in the invention, and is not limited to the particulars illustrated in the specific drawings, and includes any combination of these features, wherein the drawings are as follows: Figure 1A is a portion A side cross-sectional view showing a specific embodiment of a device for performing a motion forming process; FIG. 1B is another view of the device of FIG. 1A in the same position during a flow forming process; For a partial side cross-sectional view, an element having a textured inner surface formed by flow formation is shown; FIG. 3 is a partial front cross-sectional view showing a flow axis for forming a hair unit The embodiment of the present invention is a preferred embodiment of a textured surface that is superior to the first-class process of the present invention. The fourth embodiment is a partial side view showing a flow forming process. A specific embodiment of the mask is formed; and Figure 5 is a partial side cross-sectional view showing a specific embodiment of a processing chamber having one or more flow forming elements.

【主要元件符號說明】 20 内表面 22 元件 24 預型體 26 心抽 28 紋理表面 3 0a 倒像特徵 30 b 突起 34 樣式 36 元件壁 40 第一端 42 尾座 44 縱轴 46 加壓裝置 48 壓力滾輪 5 0 外表面 52 裝置 5 6 轴承 58 表面樣式 60 浮凸突起 60 凹陷 62 交互之突起 62 凹陷 64 凹陷 66 轉角 64 相對應突起 70 空心内部區段 104 基板 105 表面 106 處理室 109 處理區 112 氣體運送系 統 114 基板支撐件 116 氣體能量化 器 118 外罩壁 20 200813248[Main component symbol description] 20 Inner surface 22 Element 24 Preform 26 Heart pumping 28 Texture surface 3 0a Inverted feature 30 b Protrusion 34 Pattern 36 Element wall 40 First end 42 Tailstock 44 Vertical axis 46 Pressurizing device 48 Pressure Roller 50 Outer surface 52 Device 5 6 Bearing 58 Surface pattern 60 embossing protrusion 60 Recession 62 Interactive protrusion 62 Depression 64 Depression 66 Corner 64 Corresponding protrusion 70 Hollow inner section 104 Substrate 105 Surface 106 Processing chamber 109 Processing area 112 Gas Transportation system 114 substrate support 116 gas energyifier 118 housing wall 20 200813248

120 遮罩 122 排氣裝置 124 濺鍍靶材 125 輕材邊緣 126 蓋環 128 沈積環 130 支撐環 132 絕緣環 134 上表面 135 氣體通電線圈 137 線圈支撐件 139 處理套組 141 夾合遮罩 164 側壁 166 下壁 168 頂壁 170 電極 172 電源供應 174 氣體來源 176 導管 178 閥 180 氣體分配器 182 氣體出口 184 排氣埠 186 排氣導管 188 節流閥 190 排氣泵 192 電源供應 194 控制器120 Mask 122 Exhaust 124 Sputtering target 125 Lightweight edge 126 Cover ring 128 Deposition ring 130 Support ring 132 Insulation ring 134 Upper surface 135 Gas energized coil 137 Coil support 139 Treatment kit 141 Sandwich mask 164 Side wall 166 Lower wall 168 Top wall 170 Electrode 172 Power supply 174 Gas source 176 Catheter 178 Valve 180 Gas distributor 182 Gas outlet 184 Exhaust gas 186 Exhaust duct 188 Throttle valve 190 Exhaust pump 192 Power supply 194 Controller

21twenty one

Claims (1)

200813248 十、申請專利範圍: 1. 一種製造用於一基板處理室之一元件的方法,該方法至 少包含: (a)提供一具有内及外表面之預型體; (b )提供一具紋理表面之心軸,該紋理表面之紋理特 徵樣式至少包含多個循環且交錯之突起及凹陷:200813248 X. Patent Application Range: 1. A method of manufacturing an element for a substrate processing chamber, the method comprising at least: (a) providing a preform having inner and outer surfaces; (b) providing a texture The mandrel of the surface, the textured feature of the textured surface contains at least a plurality of cyclically and staggered protrusions and depressions: (c )將該預型體之内表面和該心軸之紋理表面接觸; 以及 (d )施加一壓力至該預型體,該壓力夠高足以塑性變 形該預型體並導致該預型體之内表面在心軸之紋理表 面上流動,以形成一具紋理内表面的元件,該紋理内表 面包含一紋理特徵樣式。 2·如申請專利範圍第1項所述之方法,其中上述之(d ) 步驟包含形成一具紋理内表面之元件,且該紋理内表面欠 缺沿著該紋理内表面之長度延伸的線性或螺旋凹陷。. 3·如申請專利範圍第1項所述之方法,其中上述之(b ) 步驟包含提供一具有交錯地突起與凹陷之樣式的心軸,該 等突起與凹陷具有至少一下列特徵: (i )該等突起之高度約介於0.005至0.050英吋; (ii )該等突起在二分之一高度處的寬度約介於0.007 至0.070英吋; 22 200813248 (iii )該等凹陷之深度钓介於0.005至0· 050英吋; (iv )該等凹陷在二分之一深度處的寬度約介於0_002 至0.1 3 0英吋;以及 (v )該等突起及凹陷之樣式包含一正弦曲線橫切面。 4.如申請專利範圍第1項所述之方法,其中上述之(b ) 步驟包含提供一心軸,其具有至少一下列特徵:(c) contacting the inner surface of the preform with the textured surface of the mandrel; and (d) applying a pressure to the preform sufficient to plastically deform the preform and cause the preform The inner surface flows over the textured surface of the mandrel to form a textured inner surface element comprising a textured feature pattern. 2. The method of claim 1, wherein the step (d) comprises forming a textured inner surface element and the inner surface of the texture lacks a linear or spiral extending along a length of the inner surface of the texture. Depression. 3. The method of claim 1, wherein the step (b) comprises providing a mandrel having a pattern of staggered protrusions and depressions, the protrusions and depressions having at least one of the following features: (i) The height of the protrusions is between about 0.005 and 0.050 inches; (ii) the width of the protrusions at the height of one-half is between 0.007 and 0.070 inches; 22 200813248 (iii) the depth of the depressions Between 0.005 and 0. 050 inches; (iv) the width of the depressions at a depth of one-half is between 0_002 and 0.130 inches; and (v) the pattern of the protrusions and depressions includes a sine Curve cross section. 4. The method of claim 1, wherein the step (b) comprises providing a mandrel having at least one of the following features: (i ) 一紋理表面,其包含多個致理特徵,該等紋理特 徵實質上欠缺銳角及銳邊;以及 (ii )該心軸至少部份可折疊。 5.如申請專利範圍第1項所述之方法,其中上述之(a ) 步驟包含提供一預型體,其具有圓柱形側壁且該圓柱形側 壁包含該内及外表面。 6 ·如申請專利範圍第1項所述之方法,其中在上述(d ) 步驟中,藉由加熱該元件並使得該元件之内表面膨脹超過 該心轴之突起的高度,以便自該心軸移除該元件。 7 ·如申請專利範圍第1項所述之方法,其中上述之(d ) 步驟至少包含藉由在該預型體之外表面上按壓旋轉滾輪以 在該預型體上施加一壓力。 23 200813248 8.如申請專利範圍第1項所述之方法,其中上述之預型體 至少包含下列至少一者:鋁、銅、不鏽鋼、鈦、及前述之 合金。(i) a textured surface comprising a plurality of texture features that are substantially lacking acute and sharp edges; and (ii) the mandrel is at least partially foldable. 5. The method of claim 1, wherein the step (a) comprises providing a preform having a cylindrical side wall and the cylindrical side wall comprising the inner and outer surfaces. 6. The method of claim 1, wherein in the step (d), the element is heated and the inner surface of the element is expanded beyond the height of the protrusion of the mandrel from the mandrel Remove the component. 7. The method of claim 1, wherein the step (d) comprises at least applying a pressure on the preform by pressing a rotating roller on an outer surface of the preform. The method of claim 1, wherein the preform comprises at least one of the following: aluminum, copper, stainless steel, titanium, and alloys of the foregoing. 9. 一種如申請專利範圍第1項所述之方法所形成之用於一 基板處理室的元件,其中該元件包含下列至少一者:一處 理室外罩壁、一處理室遮罩、一乾材、一乾材邊緣、一處 理套組之一元件、一蓋環、一沈積環、‘一支撐環、一絕緣 環、一線圈、一線圈支撐件、一快門片、一夾合遮罩、及 一基板支撐件。 249. An element for a substrate processing chamber formed by the method of claim 1, wherein the element comprises at least one of: a processing outer cover wall, a processing chamber mask, a dry material, a dry material edge, a processing kit component, a cover ring, a deposition ring, a support ring, an insulating ring, a coil, a coil support member, a shutter, a sandwich mask, and a substrate supporting item. twenty four
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