200812107 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體光源裝置，且特別是有關於一種兼具聚光 及散熱的半導體光源裝置。 【先前技術】 習知大多使用如白熾燈、鹵素燈或曰光燈等各種不同之燈泡，以作為 光源裝置之發光源。近來，由於發光二極體(Light Emitting Di〇de，簡稱 ⑩LED)等半導體晶片具有體積小、省電與壽命長等優點，乃逐漸取代而成為 極受歡迎之發光源。 對於光源裝置之結構而言，多晶片、高功率之發光二極體封裝，已成 為不可縣讀勢要求。勤，賴為”GQneentHeally Leaded p_200812107 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor light source device, and more particularly to a semiconductor light source device having both condensing and heat dissipation. [Prior Art] Conventionally, various light bulbs such as an incandescent lamp, a halogen lamp, or a neon lamp have been used as a light source of a light source device. Recently, semiconductor wafers such as Light Emitting Diodes (LEDs) have the advantages of small size, power saving, and long life, and have gradually become a popular source of illumination. For the structure of the light source device, the multi-wafer, high-power LED package has become a non-prefective reading requirement. Diligence, Laiwei" GQneentHeally Leaded p_
Semi_ductOT Device Package”之美國第M92,725號專利，即提出一種 共中心之封裝結構，以利於封裝多個高功率晶片之結構的散熱。此種封裝 結構，雖可解決封裝多個高轉晶#之散熱問題，但因為在封裝結構體之 周邊’財-面可_轉體；，使得轉體⑼的封絲量受到限制， 且當半導體晶片為發光二極體時，也因為封裝結構體之周邊分佈的半導體 晶片不能集中，使其不易滿足應用在半導體光源裝置時之聚光要求。 1 【發明内容】 • 有餘此，本發日狀目的是提供—種半導體光職置，其可兼具 散熱與光源裝置的聚光需求。 為達上述及其他目的，本發明提供—種铸體絲裝置包括：導 熱電路基板、第—轉體晶狀第—聚光杯。其中，導鐘路基板具有第 5 200812107 =接面，第-焊接面上具有多辦墊。第—半導體晶片係 路基板之第一焊接面上，並電性連接至第-焊接面之焊墊上。第：電 亦貼附於導«路基板之第—焊接面上，以在第—雜面 === 形成第-出光口，而將第—铸體⑼所產生之光，匯聚 方向 ^貝關中‘熱電路基板也具有第二焊接面，第二谭接面上同樣 ^夕:焊塾，而半導體光源裝置更包括：第二半導體晶片與第二聚光杯。 •，、中1二半賴；係_於導鏡路基板之第二焊接面上，並電性連 接至第二焊接面上之。第二縣杯也_在導熱基板之第二焊接 面上，以在第二焊接面與第二聚光杯間形成第二出光口，而將第二半導體 晶片所產生之光，匯聚往第二出光口之方向。 在-實施例中，此半導體光源裝置更包括··外導體、内導體、絕緣 層與多個第三半導體晶片。其中，外導體係配置於第一聚光杯與第二聚光 杯中，並具有外表面、第一端、第二端與連通第一端及第二端之通孔。内 導體係設置於通孔中，並突出於第一端之外。絕緣層設置於内導 •體與外導體之間’而多個第三半導體晶片則貼附於外導體第一端之外表 “並以串連、並連或串並連組合方式連接至内導體與外導體，使第 /半導體晶片所產生之光，分別經由第一聚光杯與第二聚光杯之匯聚，而 ，往第—出光口與第二出光口之方向傳送。 ， 為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂， 下文特以較佳實施例，並配合所附圖式，作詳細說明如下·： 【實施方式】 圖1 2顯示根據本發明第一實施例之一種半導體光源裝置1〇，此半導 6 200812107 體光源裝置10包括例如是絲板或随基板之導熱電路基板U、例如是發 光二極體晶片之半導體晶片12、13及聚光杯14、15。其中，為了提高半導 體晶片12、13的一階導熱散熱效果，導熱電路基板n上用以貼附半導體 晶片12、13的位置，並内嵌有導熱係數較導熱電路基板n為佳之一内嵌 散熱塊115。内嵌散熱塊115之材質例如為銅，内嵌方式則可以使用挖空導 熱電路基板11，再予緊密配合之方式來製作。 圖中，導熱電路基板11具有焊接面lu與112，焊接面m與112上 分別具有作為電路佈線之多個焊墊113。因為半導體；12、13係為倒裝 晶片（Fllp Chip)，故可分別貼附並電性連接至導熱電路基板u之焊接面 111與112的焊墊113上，以使用焊塾113的電路佈線，來作為半導體晶片 12、13的供電電極。 ，此外，導熱電路基板11之兩個焊接面111與112上，也分別貼附有聚 光杯14與15，聚光杯14、15與導鏡路基板11之兩辦接面ιη、112 間，即可分卿成出光σ 16與17。聚光杯14、15則將半導體⑼12、13 所產生之光，分別匯聚往出光口 16與17之方向。 前述實施例中，雖然在導熱電路基板11之兩個焊接面m與112上， 刀別僅貼附有倒裝之半導體晶片12或13。然熟習此藝者應知，可在導孰電 路基板η之兩個焊接面m與112上，分別貼附更多之半導體晶片12或 3 ’以增加此半導體光源裝置10之發光強度。所貼附之半導體晶片12或 13也可以是一般晶片，再以導線分別連接至焊接面出與⑴的焊墊ιι3 上’其貼附位置較佳地應分別位於聚光杯14或15之焦點 、當焊接面m與112上娜附有多個半導侧12幻3時、‘，也可 乂搭配焊接面m與112上之不哪線料，以及控制此 1〇之電路，來達成在不同場合應用此半導體光源裝置H)之目的。例如，將 7 200812107 此半«光源裝置1G應用在汽車職時，可簡作為遠光駐光源之半導 體晶片12似3’細在導熱電路基板U對騎光杯14或15之焦點位置， 且將作為近紐规之轉體晶>^2或13，貼附在導熱轉基板u對應 聚光杯14或15之焦點前方’並應用導熱電路基板^之佈線，分別連接至 半導體光職置1G料隨概路上，以分顺概統絲光燈光源的 點亮與否。 另外，如將此料縣縣置1G躺錢妓光時，除了可以將半導 體晶片12或13，貼附在導熱電路基板n斜應聚光杯14或15之焦點位置 外’也可以將半導體晶片12或13，貼附在導熱電路基板η對應聚光杯μ 或15之焦點四周，並應料鱗路基板u之佈線，將餘上餘點四周 之半導體晶片12㈣，分別連接至半導體光源裝置丨_同控制電路上， 以分別控制半導體晶片12或13的點亮與否，達成動態控制舞台燈光之目 的。其中，貼附於焦點左侧之半導體晶片12 _所產生的光，將會偏向 右方投射’嘯猶點賴之轉_ 12或13所產生的光，則會偏 向左方投射，故可祕配轉體光職置1G的控制電路，絲態 燈光。 圖3-7顯示根據本發明第二實施例之—種半導體光源裝置3〇，此半導 ==裝置3G _合於作為汽車之職使用，其除了具有與_似之 導'、、、電路基板3卜作為近光燈光源之半導體晶片&及聚光杯33外，更包 =外導體4卜内導體42、絕緣層43與多個轉體晶片_構成之 40，4〇 33 5i 〇 ^ ^ 不:1丨:方具有V形缺口 311，以#將主光源4G置入聚光杯33時， 曰文到導織路基板31之妨礙，㈣_進至聚脉33之焦點位置。 如圖所示，外導體41較佳地為長條形圓柱狀，其具有第一端姐、第 8 200812107 二端412、連通第一端411與第二端412之通孔413及一外表面414。第一 端411係製作成錐狀，錐狀外表面414之周圍則具有圍繞外導體41且平均 分佈之平面4141、4142、4143與4144，用以貼附例如是發光二極體之半導 體晶片44。第二端412則可以設置多個螺紋415,用以配合設置於聚光杯 33上的螺紋，來調整主光源4〇在聚光杯33中之位置。 内導體42較佳地為外徑略小於外導體41之通孔413的長條形圓柱 狀，以便可以穿設於通孔413中，並延伸其一端至突出於外導體4ι 的第一端411外。圖中，内導體42突出外導體41之部分並具有一錐 狀末端421，錐狀末端421較佳地也具有分別與平面4141、4142、4143與 4144相對應之平面4211、4212、4213與4214，以利於使用導線45將半導 體晶片44分別連接至内導體42與外導體41。 絕緣層43係設置於内導體42與外導體41之間，以隔離内導 體42與外導體41的電性連接，使内導體42與外導體4丨成為此 主光源40之電極。 前述第二實施例的主光源40，除了可以是如圖3—7所示之結構外，熟 馨習此藝者亦可依據其精神而進行各種不同之變化。例如，圖8—1〇即顯示二 種類似於圖3-7之主光源40的不同結構，分別說明如下。 請參考圖8所示，主光源70的内導體72與外導體71結構均與 圖3-7相同，所不同的只有半導體晶片74的連接方式。在圖卜7中， 每個半導體晶片44均係以導線45分別連接至内導體42與外導體41， 使半導體晶片44成為並連連接，而圖8中，半導體晶片％係以導線乃先 行串連連接後，再連接至内導體72與外導體71。當然，此種串連、 f連或甚至串並連組合猶财式，射域用者依據供電與半導體 晶片74的額定電壓之不同，而加以變化選擇的。 9 200812107 圖9之主光源80的内導體82與外導體81結構亦大致與圖3一7 相同，所不同的是外導體81與内導體82上所設置用以貼附半導體 晶片84的平面數，以及所貼附之半導體晶月84的數目。如圖9所示，錐 狀外表面之周圍具有圍繞外導體且平均分佈之三個平面SMI、8142與 8143，每個平面8141、8142與8143上，各貼附有三個例如是發光二極體 之半導體曰曰片84 ’半導體晶片84並以導線85先行串連連接後，再連接至 内導體82與外導體81，以形成串並連交互組合之連接方式。 • 圖10之主光源9〇的内導體92與外導體91結構同樣也大致與 囷3 7相同，不同的是外導體Q 1與内導體犯上所設置用以貼附 半導體晶片94的平面數，以及所貼附之半導體晶片94的型式。如圖10 所不，錐狀外表面之周圍具有圍繞外導體91且平均分佈之五個平面跑卜 142 9143 9144 與 9145 ’ 每個平面 9141、9142、9143、9144 與 9145 上， 係貼附有倒裝晶片（Flip Chip)之半導體晶片94。由於半導體晶片⑽係貼 附並直接電性連接至外導體91與内導體92，因此，圖中之半導體晶片 94 ’並未再以導線分別連接至内導體92與外導體。 • 由前述說日种可知，_料體統裝置10係將半導體⑼12、13 貼附在例如是銘基板或陶莞基板之導熱電路基板11上，其無疑地可提供足 夠之貼附面積與散熱面積。而半導體光源裝置30之外導體與内導體犯 ，2結構’則如前述可在較小的體積内封裝較多的半導體晶片，達成較佳的 光效果。此外，由於半導體光源裝置3〇之外導體4卜除了可以作為供電 電木卜也可以藉由與外加散熱器（未繪示）的轉合，使得如高功率發光 -極體等轉體⑼所產生__快速發散，達紐侧散熱功效。 &雖然本發明已以較佳實施例揭露如上，然其並非用以限定本 I明’任何热習此技藝者，在不脫離本發明之精神和範圍内所作 200812107 之各種更動與潤飾，亦屬本發明之範圍。因此，本發明之保護範 圍當視後附之申請專利範圍所界定者為準。 、 【圖式簡單說明】 圖1係顯示根據本發明第一實施例之一種半導體光源裝置立體圖。 圖2係顯示圖1之分解立體圖。 圖3係顯示根據本發明第二實施例之一種半導體光源裝置立體圖。 圖4係顯示圖3之分解立體圖。 圖5係顯示圖4之主光源放大立體圖。 圖6係顯示圖4之主光源剖面圖。 圖7係顯示圖4之主光源俯視圖。 圖8係顯示圖4之主光源的另一連接方式俯視圖。 圖9係顯示圖4之主光源的一種結構變化俯視圖。 圖10係顯示圖4之主光源的另一種結構變化俯視圖。 【主要元件符號說明】 10、 30半導體光源裝置' 11、 31導熱電路基板 111、112焊接面 113烊墊 115内嵌散熱塊 12、 13、32半導體晶片 14、15、33聚光杯 16、17出光口 π 200812107 311 V形缺口 40、 70、80、90 主光源 51螺帽 41、 71、8卜91外導體 411第一端 412第二端 413通孔 414外表面 4141、4142、4143、4144、4211、4212、4213、4214 平面 415螺紋 42、 72、82、92 内導體 421錐狀末端 43絕緣層 44、 74、84、94半導體晶片 45、 75、85 導線 8141、8142、8143、9141、9142、9143、9144、9145 平面 12The US Patent No. M92,725 of the Semi_ductOT Device Package proposes a concentric packaging structure to facilitate heat dissipation of a structure encapsulating a plurality of high-power chips. This package structure can solve the package of multiple high-transformation crystals# The problem of heat dissipation, but because the periphery of the package structure can be turned into a body, the amount of the wire of the rotating body (9) is limited, and when the semiconductor wafer is a light-emitting diode, it is also because of the package structure. The semiconductor wafers distributed around the periphery cannot be concentrated, making it difficult to meet the concentrating requirements when applied to a semiconductor light source device. 1 [Summary of the Invention] • In addition, the purpose of this publication is to provide a semiconductor optical position, which can be combined with For the above and other purposes, the present invention provides a cast wire device comprising: a thermally conductive circuit substrate, a first-rotating crystalline first-concentrating cup, wherein the guiding circuit substrate has No. 5 200812107 = junction, the first soldering surface has a plurality of pads. The first semiconductor wafer is on the first soldering surface of the substrate, and is electrically connected to the pad of the first soldering surface. : The electricity is also attached to the first surface of the guide substrate - the welding surface, to form the first light exit port at the first dough surface ===, and the light generated by the first casting body (9) is concentrated in the direction of the shell The thermal circuit substrate also has a second soldering surface, and the second soldering surface is also the same: the semiconductor light source device further includes: a second semiconductor wafer and a second collecting cup. _ is on the second soldering surface of the guide substrate, and is electrically connected to the second soldering surface. The second county cup is also on the second soldering surface of the heat conducting substrate to the second soldering surface The second light-emitting port forms a second light-emitting port, and the light generated by the second semiconductor wafer is concentrated in the direction of the second light-emitting port. In the embodiment, the semiconductor light source device further includes an outer conductor and an inner conductor. An insulating layer and a plurality of third semiconductor wafers, wherein the outer guiding system is disposed in the first concentrating cup and the second concentrating cup, and has an outer surface, a first end, a second end, and the first end and the first end The through hole of the two ends. The inner guiding system is disposed in the through hole and protrudes beyond the first end. Placed between the inner conductor and the outer conductor' and a plurality of third semiconductor wafers are attached to the outer end of the outer conductor "and connected in series, parallel or serially to the inner conductor and outer The conductor causes the light generated by the first/semiconductor wafer to be concentrated by the first collecting cup and the second collecting cup, and is transmitted to the first light exit port and the second light exit port. The above and other objects, features, and advantages of the present invention will become more apparent and understood by the appended claims appended claims According to a semiconductor light source device 1 of the first embodiment of the present invention, the semiconductor light source device 10 includes, for example, a wire plate or a thermally conductive circuit substrate U with a substrate, a semiconductor wafer 12 such as a light emitting diode chip, 13 and the concentrating cups 14, 15. In order to improve the first-order heat conduction and heat dissipation effect of the semiconductor wafers 12 and 13, the position of the semiconductor wafers 12 and 13 on the heat-conductive circuit substrate n is attached, and the thermal conductivity is embedded in the thermal conductive circuit substrate n. Block 115. The material of the embedded heat sink 115 is, for example, copper, and the in-line method can be fabricated by using the hollowed-out thermal circuit substrate 11 and closely fitting it. In the figure, the thermally conductive circuit substrate 11 has soldering faces lu and 112, and the soldering faces m and 112 respectively have a plurality of pads 113 as circuit wirings. Because the semiconductors 12 and 13 are flip-chips, they can be attached and electrically connected to the pads 113 of the soldering surfaces 111 and 112 of the thermally conductive circuit substrate u to use the circuit wiring of the solder pads 113. As the power supply electrodes of the semiconductor wafers 12, 13. In addition, on the two soldering surfaces 111 and 112 of the thermally conductive circuit substrate 11, the collecting cups 14 and 15 are also attached, and the two surfaces of the collecting cups 14, 15 and the guiding substrate 11 are interposed between the interfaces , you can divide the light into σ 16 and 17. The concentrating cups 14, 15 converge the light generated by the semiconductors (9) 12, 13 in the directions of the light exits 16 and 17, respectively. In the foregoing embodiment, on the two soldering faces m and 112 of the thermally conductive circuit substrate 11, only the flip-chip semiconductor wafer 12 or 13 is attached to the blade. As will be appreciated by those skilled in the art, more semiconductor wafers 12 or 3' may be attached to the two soldering faces m and 112 of the conductive circuit substrate η to increase the luminous intensity of the semiconductor light source device 10. The attached semiconductor wafer 12 or 13 may also be a general wafer, and then the wires are respectively connected to the soldering surface and the bonding pad ιι3 of (1). The attached positions are preferably located at the focus of the collecting cup 14 or 15 respectively. When the welding faces m and 112 are attached with a plurality of semi-conductive sides 12 illusion 3, ', you can also match the non-wire materials on the welding faces m and 112, and control the circuit of this one to achieve The purpose of the semiconductor light source device H) is applied in different occasions. For example, when the 7 200812107 half-light source device 1G is used in the automobile occupation, the semiconductor wafer 12 which can be simply used as the high-beam standing light source is thinner than the focus position of the heat-conductive circuit substrate U on the riding cup 14 or 15, and As a near-new gauge, the body crystals>2 or 13, attached to the front side of the focus of the heat-conducting substrate u corresponding to the condenser cup 14 or 15 and the wiring of the heat-conducting circuit substrate ^, respectively connected to the semiconductor light position 1G On the way, the light source of the filament light is illuminated or not. In addition, if the material county is placed at 1G, the semiconductor wafer 12 or 13 can be attached to the thermal conductive circuit substrate n outside the focus position of the concentrating cup 14 or 15 12 or 13, attached to the periphery of the focus of the heat-conducting circuit substrate η corresponding to the collecting cup μ or 15, and the wiring of the scale circuit substrate u, and the semiconductor wafer 12 (four) remaining around the remaining points are respectively connected to the semiconductor light source device. On the same control circuit, to control the lighting of the semiconductor wafer 12 or 13, respectively, to achieve the purpose of dynamically controlling the stage lighting. Among them, the light generated by the semiconductor wafer 12 _ attached to the left side of the focus will be biased to the right to project the light generated by the whistling turn -12 or 13, which will be projected to the left, so it is secret. With the rotating body light position 1G control circuit, silk light. 3-7 show a semiconductor light source device 3〇 according to a second embodiment of the present invention, which is used in conjunction with a vehicle as an automobile, and which has a circuit similar to that of The substrate 3 is a semiconductor wafer & and a collecting cup 33 as a low beam light source, and further includes an outer conductor 4 inner conductor 42 , an insulating layer 43 and a plurality of rotating wafers _ 40, 4 〇 33 5i 〇 ^ ^ No: 1丨: The square has a V-shaped notch 311, and when the main light source 4G is placed in the collecting cup 33, the obstruction to the guide path substrate 31 is blocked, and (4) is advanced to the focus position of the polypulse 33. As shown, the outer conductor 41 is preferably an elongated cylindrical shape having a first end sister, a second end 412 of the 8200812107, a through hole 413 connecting the first end 411 and the second end 412, and an outer surface. 414. The first end 411 is formed in a tapered shape, and the periphery of the tapered outer surface 414 has planes 4141, 4142, 4143 and 4144 which are evenly distributed around the outer conductor 41 for attaching a semiconductor wafer 44 such as a light emitting diode. . The second end 412 can be provided with a plurality of threads 415 for adjusting the position of the main light source 4 in the collecting cup 33 in cooperation with the thread provided on the collecting cup 33. The inner conductor 42 is preferably an elongated cylindrical shape having an outer diameter slightly smaller than the through hole 413 of the outer conductor 41 so as to be able to pass through the through hole 413 and extend one end thereof to protrude from the first end 411 of the outer conductor 4ι. outer. In the figure, the inner conductor 42 protrudes from a portion of the outer conductor 41 and has a tapered end 421. The tapered end 421 preferably also has planes 4211, 4212, 4213 and 4214 corresponding to the planes 4141, 4142, 4143 and 4144, respectively. In order to facilitate the use of the wires 45 to connect the semiconductor wafer 44 to the inner conductor 42 and the outer conductor 41, respectively. The insulating layer 43 is disposed between the inner conductor 42 and the outer conductor 41 to isolate the inner conductor 42 from the outer conductor 41 so that the inner conductor 42 and the outer conductor 4 become the electrodes of the main light source 40. The main light source 40 of the foregoing second embodiment can be variously changed according to its spirit, in addition to the structure shown in Fig. 3-7. For example, Figure 8.1 shows two different configurations similar to the primary light source 40 of Figures 3-7, respectively, as follows. Referring to FIG. 8, the structure of the inner conductor 72 and the outer conductor 71 of the main light source 70 are the same as those of FIG. 3-7, except that the semiconductor wafer 74 is connected. In FIG. 7, each of the semiconductor wafers 44 is connected to the inner conductor 42 and the outer conductor 41 by wires 45, respectively, so that the semiconductor wafers 44 are connected in parallel. In FIG. 8, the semiconductor wafers are preliminarily linked by wires. After being connected, it is connected to the inner conductor 72 and the outer conductor 71. Of course, such a series, f-connection or even a series of parallel combinations can be selected according to the difference between the power supply and the rated voltage of the semiconductor wafer 74. 9 200812107 The inner conductor 82 and the outer conductor 81 of the main light source 80 of FIG. 9 are also substantially the same as those of FIGS. 3-7 except for the number of planes on the outer conductor 81 and the inner conductor 82 for attaching the semiconductor wafer 84. And the number of semiconductor crystal moons 84 attached. As shown in FIG. 9, the tapered outer surface has three planes SMI, 8142 and 8143 which are evenly distributed around the outer conductor, and each of the planes 8141, 8142 and 8143 is attached with three, for example, light-emitting diodes. The semiconductor wafer 84' semiconductor wafer 84 is connected in series with the wires 85, and then connected to the inner conductor 82 and the outer conductor 81 to form a series connection method. The inner conductor 92 of the main light source 9A of FIG. 10 is also substantially identical in structure to the outer conductor 91, except that the outer conductor Q1 and the inner conductor commit the number of planes provided for attaching the semiconductor wafer 94, And the type of semiconductor wafer 94 to which it is attached. As shown in Fig. 10, the outer surface of the tapered outer surface has five planes surrounding the outer conductor 91 and is evenly distributed. 142 9143 9144 and 9145' are attached to each of the planes 9141, 9142, 9143, 9144 and 9145. A flip chip wafer semiconductor wafer 94. Since the semiconductor wafer (10) is attached and directly electrically connected to the outer conductor 91 and the inner conductor 92, the semiconductor wafer 94' in the figure is no longer connected to the inner conductor 92 and the outer conductor by wires, respectively. • As can be seen from the above, the semiconductor device 10 attaches the semiconductors (9) 12 and 13 to the thermally conductive circuit substrate 11 such as a substrate or a ceramic substrate, which undoubtedly provides sufficient adhesion area and heat dissipation area. . On the other hand, the outer conductor and the inner conductor of the semiconductor light source device 30 are sterilized, and the two structures can encapsulate a large number of semiconductor wafers in a small volume as described above, achieving a better light effect. In addition, since the conductor 4 of the semiconductor light source device 3 can be used as a power supply, it can also be rotated by an external heat sink (not shown) to make a rotating body such as a high-power light-emitting body (9). Produce __ fast divergence, heat dissipation effect on the side of the New Zealand. While the invention has been described above by way of a preferred embodiment, it is not intended to be limited to the details of the various modifications and modifications of 200812107, without departing from the spirit and scope of the invention. It is within the scope of the invention. Therefore, the scope of protection of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a semiconductor light source device according to a first embodiment of the present invention. Fig. 2 is an exploded perspective view showing Fig. 1. 3 is a perspective view showing a semiconductor light source device according to a second embodiment of the present invention. Fig. 4 is an exploded perspective view showing Fig. 3. Fig. 5 is an enlarged perspective view showing the main light source of Fig. 4. Figure 6 is a cross-sectional view showing the main light source of Figure 4. Figure 7 is a plan view showing the main light source of Figure 4. Fig. 8 is a plan view showing another connection mode of the main light source of Fig. 4. Figure 9 is a top plan view showing a structural change of the main light source of Figure 4. Figure 10 is a top plan view showing another structural change of the main light source of Figure 4. [Major component symbol description] 10, 30 semiconductor light source device '11, 31 thermal conductive circuit substrate 111, 112 soldering surface 113 烊 pad 115 embedded heat sink 12, 13, 32 semiconductor wafer 14, 15, 33 concentrating cup 16, 17 Light exit π 200812107 311 V-shaped notch 40, 70, 80, 90 Main light source 51 Nuts 41, 71, 8 91 Outer conductor 411 First end 412 Second end 413 Through hole 414 Outer surface 4141, 4142, 4143, 4144 4211, 4212, 4213, 4214 plane 415 threads 42, 72, 82, 92 inner conductor 421 tapered end 43 insulating layer 44, 74, 84, 94 semiconductor wafer 45, 75, 85 conductors 8141, 8142, 8143, 9141 9142, 9143, 9144, 9145 plane 12