TW200811941A - Cleaning method and cleaning apparatus - Google Patents
Cleaning method and cleaning apparatus Download PDFInfo
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- TW200811941A TW200811941A TW096124348A TW96124348A TW200811941A TW 200811941 A TW200811941 A TW 200811941A TW 096124348 A TW096124348 A TW 096124348A TW 96124348 A TW96124348 A TW 96124348A TW 200811941 A TW200811941 A TW 200811941A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Liquid Crystal (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning In General (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
200811941 九、發明說明： 【發明所屬之技術領域】 本發明係關於使用超臨界流體之潔淨方法及潔淨設備， 其適用於在半導體製造過程中潔淨半導體基板，或適用於 在（例如）製造光遮罩或液晶顯示基板之過程中潔淨基板。 【先前技術】 在大多數半導體設備製造過程中，例如，在用於形成所 要平面形狀的電極之圖案形成過程中，藉由在一電極層、 佈線層、絕緣層或沈積於半㈣基板上之類似層上蚀刻圖 案來產生佈線圖案及接觸孔。 在該圖案㈣中’例如’在形成於—基板上之佈線層上 形成-抗蝕膜。接著，藉由在該抗蝕膜上形成一圖案，以 形成-抗餘遮罩，該抗_罩具有—形狀與所要佈線圖案 相同之抗飯圖案。其後，該抗姓遮罩用作一飯刻遮罩，且 該佈線層經㈣而形成—佈線圖案。繼钱刻該佈線層之 後’將在-遮罩移除過程中移除該佈線圖案上之抗敍遮 罩。 在該遮罩移除過程巾，該抗料罩通常係藉由在一預定 時間週期㈣-基板及形成於其上之抗料罩浸沒於一抗 餘移除溶液（諸如硫酸鹽溶液、基於胺之抗…聚合物移除 劑、基於氟之抗钱/聚合物移除劑及其類似物）中而自該基 板移除。 近年來由於半導體設備進—步整合，佈線圖案中佈線之 線寬得以降低。在LSI(大規模積體）電路中，料之線寬變 120275.doc 200811941 得大體不超過100 nm，且佈線圖案之縱橫比（高度/寬度）亦 得到提高。 因此，根據相關技術方法（在該方法中，該蝕刻遮罩係 藉由將基板浸沒於蝕刻移除溶液中而移除），由於該蝕刻 移除溶液之大表面張力而在氣液界面處產生大的吸力。因 此，具有高縱橫比之圖案存在受損之風險，亦即圖案可能 崩潰。 當一具有中空結構（其在一可移動部分與一基板之間包 括一間隙）之微電機（MEMS :微機電系統）在其製造過程中 被潔淨時，在移除一抗蝕遮罩過程中，在一精細結構上可 能發生損壞’諸如㈣崩潰。另外’在基於—金屬镶喪 (dam〇cene)方法形成一佈線結構之過程中潔淨一多孔低介 電常數層間絕緣體時可能發生該損壞，該金屬鑲嵌方法用 於製造半導體設備之過程中。 亦即，根據使用一潔淨溶液（具有大的表面張力）之相關 技術綠淨方法，g漂淨一具有精細結構之物件時，潔淨該 物件而不損壞該精細結構係困難的。 舉例而言，曰本未審查專利申請公開案第^00828號、 日本未審查專利中請公開案第丨韻314號、日本未審查專 利申請公開案第9_43857號及日本未審查專利申請公開案 第8-181050號揭示各別超臨界技術，該等技術使用可能不 引起表面張力之超臨界流體作為抗蝕移除溶液或潔淨溶 液。 田材料之溫度及壓力增大為該材料特定的臨界溫度及 120275.doc 200811941 該材料表現出流體與固體之200811941 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a cleaning method and a cleaning apparatus using a supercritical fluid, which is suitable for cleaning a semiconductor substrate in a semiconductor manufacturing process, or for, for example, manufacturing a light mask. The substrate is cleaned during the process of the cover or the liquid crystal display substrate. [Prior Art] In most semiconductor device manufacturing processes, for example, in the patterning process for forming electrodes of a desired planar shape, by an electrode layer, a wiring layer, an insulating layer, or deposited on a half (four) substrate A pattern is etched on the similar layer to create a wiring pattern and a contact hole. In the pattern (4), a resist film is formed, for example, on a wiring layer formed on the substrate. Next, a pattern is formed on the resist film to form a resist mask having an anti-rice pattern having the same shape as the desired wiring pattern. Thereafter, the anti-surname mask is used as a rice mask, and the wiring layer is formed by (4) a wiring pattern. After the engraving of the wiring layer, the anti-snag mask on the wiring pattern will be removed during the mask removal process. In the mask removal process towel, the backing cover is typically immersed in an anti-removal removal solution (such as a sulfate solution, based on an amine) by a substrate and a mask formed thereon over a predetermined period of time (four) The anti-...polymer remover, fluorine-based anti-money/polymer remover and the like are removed from the substrate. In recent years, due to the further integration of semiconductor devices, the line width of wiring in the wiring pattern is reduced. In the LSI (Large Scale Integrated Circuit) circuit, the line width of the material is 120275.doc 200811941 is generally not more than 100 nm, and the aspect ratio (height/width) of the wiring pattern is also improved. Therefore, according to the related art method (in which the etch mask is removed by immersing the substrate in the etch removal solution), a large surface tension of the etch removal solution is generated at the gas-liquid interface Great suction. Therefore, patterns with high aspect ratios are at risk of damage, i.e., patterns may collapse. When a micro-motor (MEMS: MEMS) having a hollow structure including a gap between a movable portion and a substrate is cleaned during its manufacture, during the process of removing a resist mask , damage may occur on a fine structure such as (four) crash. Further, the damage may occur when a porous low dielectric constant interlayer insulator is cleaned during the formation of a wiring structure by a dam〇cene method for manufacturing a semiconductor device. That is, according to the related art green method using a clean solution (having a large surface tension), when it is possible to clean an object having a fine structure, it is difficult to clean the object without damaging the fine structure. For example, Japanese Unexamined Patent Application Publication No. No. 00828, Japanese Unexamined Patent Publication No. No. 314, Japanese Unexamined Patent Application Publication No. 9-43857, and Japanese Unexamined Patent Application Publication No. No. 8-181050 discloses various supercritical techniques which use a supercritical fluid which may not cause surface tension as a resist removal solution or a clean solution. The temperature and pressure of the field material increase to the specific critical temperature of the material and 120275.doc 200811941 The material exhibits fluid and solid
臨界壓力或高於此等條件時， 間的中 流體。 超臨界流體。 詳言之，在溫度為31。(：且壓力為7.38 Mpa條件下，二氧 化碳(C02)變成超臨界流體，且因此從工業觀點看使用起 來不難。 然而，即便在使用超臨界流體C〇2作為潔淨溶液來潔淨 難以自該物件解離 一物件時，對於超臨界流體C〇2而言 抗蝕劑或抗蝕劑殘餘物，因此可能不能完全自該物件移除 抗蝕劑或抗蝕劑殘餘物。 因此，用於自該物件移除抗蝕劑或抗蝕劑殘餘物之解離 化學物（下文稱作”添加劑”）或一解離溶劑被添加到該超臨 界流體，以有助於自該物件移除抗蝕遮罩。此處，解離溶 劑為用於添加劑之溶解辅助劑，且在添加劑可能不太可溶 於超臨界流體co2時使用。 美國未審查專利申請公開案第US2002/0048731 A1號揭 不藉由應用超臨界流體技術自一半導體基板（下文稱作，，晶 圓移除光阻膜或光阻殘餘物（下文均稱作"抗蝕膜之方 法。該方法特定描述如下。 首先’將一晶圓（其表面上沈積有一抗蝕膜）置於一潔淨 設備之處理腔室中。接著，調節壓力腔室中之壓力，且將 超臨界流體C〇2及添加劑置於該壓力腔室中。此外，調節 壓力腔室中之壓力且將超臨界流體C〇2及添加劑引入至該 120275.doc 200811941 壓力ι至中"亥9曰圓維持於溶解有添加劑之超臨界流體 c〇2中，使得包括添加劑之超臨界流體叫可接觸該抗餘 膜直至自該晶圓移除該抗餘膜。繼自晶圓移除抗餘膜之 後’釋放壓力且晶圓被潔淨。 根據US2GG2/_873i A1，該^不僅可移除綠膜及 光阻殘餘物，且亦可移除晶圓上之其他粒子及金屬污染材 料。 此外，若添加劑難以溶解於超臨界流體c〇2中，則除了 該添加劑外，可添加一解離溶劑至該超臨界流體C〇2中作 為用於組合該添加劑及該超臨界流體eh之溶劑。經由彼 等過程，可使用超臨界流體潔淨晶圓及其他類似物。 曰本未審查專利申請公開案第11_216437號揭示一技 術，其中，在一超臨界流體潔淨方法中，藉由在潔淨過程 中將超臨界流體自-潔淨池排纟至一分離池而迅速降低壓 力，使得可提高超臨界流體之流速以改良潔淨效應。 圖1為一展示根據相關技術之超臨界流體潔淨設備之示 意圖。如圖1中所示，一超臨界潔淨設備40包括一基板潔 淨池（亦即，處理腔室）41、一用於供應超臨界流體（其中混 合有超臨界流體C〇2及添加劑）至該基板潔淨池41之主管道 (超臨界流體管道）42、一用於自該基板潔淨池41排放用於 潔淨之超臨界流體之排放管道43，及用於供應添加劑至該 超臨界c〇2管道（主管道）42之添加劑管道44及45。在此實 例中，該超臨界流體潔淨設備40包括添加劑管道44及45之 兩個系統。又，管道42、43、44及45分別具備一超臨界 120275.doc 200811941 C〇2供應閥（開/關閥）46、一背壓閥47及添加劑供應閥（開/ 關閥）48及49。 在該潔淨設備40中，當潔淨一物件時，諸如半導體晶圓 之該物件置於該基板潔淨池41中。接著，打開該超臨界 C〇2供應閥46、背壓閥47及兩個添加劑供應闊48及49，且 經由主管道42將已添加添加劑52及53至該超臨界C02 51之 超臨界流體供應至該基板潔淨池41以潔淨該晶圓。繼潔淨 晶圓之後’關閉該等添加劑供應閥48及49，且將僅供應超 臨界C〇2 5 1以沖洗該晶圓。繼沖洗該晶圓之後，關閉超臨 界C〇2供應閥46 ’基板潔淨池41中壓力降低返回至大氣 壓。隨後，自基板潔淨池41取出經如此潔淨之半導體晶 圓。 【發明内容】 使用上述超臨界流體潔淨以防止損壞一精細結構，亦 即，防止圖案崩潰，此發生於移除抗蝕遮罩之過程中。然 而，繼潔淨晶圓之後，仍存在溶於一超臨界流體（殘留於 末端官道中）中之添加劑在降壓狀態下經液化，進入基板 >累淨池中而潤濕該晶圓且因此可損壞該精細結構之問題。 此外，由於在極其高壓下使用超臨界流體潔淨且沖洗該半 導體晶圓，因此在該沖洗過程中難以自末端管道清洗殘留 添加劑。若在該添加劑未充分自該末端管道清洗之條件 下，设備中之壓力返回至常壓，則經液化之添加劑快速進 入基板潔淨設備中而潤濕該半導體晶圓。 此外，將參考圖丨及圖2八至2D詳細描述上述問題。應注 120275.doc 200811941 意，圖2A至2D中之虛線表示超臨界c〇2流，且實線表示添 加劑及殘餘添加劑流。另外，在圖2八至2D中，空閥表示 閥處於打開狀怨’且實心閥表示閥處於關閉狀態。 當潔淨基板時（圖2A)，在管道壓力下，四個閥46、47、 48及49全部打開。此時，儘管所添加之添加劑52及53在添 加劑管道44及45中經加壓，但其通常保持於液相。添加劑 52及53添加至待處於超臨界狀態之該超臨界流體c〇2 5ι。 隨後，使用經添加添加劑之該超臨界流體以在基板潔淨池 41中潔淨該半導體晶圓。 接著，繼潔淨該半導體晶圓之後，關閉經提供至用於供 應添加劑之添加劑管道44及45之添加劑供應閥48及49(圖 2B)。此時，在關閉添加劑供應閥銘及的之瞬間流動的添 加劑52A及53A部分殘留於靠近添加劑供應閥48及49之部 刀中酼後，僅使用超臨界C〇2 5 1沖洗該半導體晶圓。此 夺由於苢道至基板潔淨池41之壓力高，因此留在靠近添 ，劑供應閥48及49之部分處之添加劑52A及53A仍位於此 等部分中。亦即，可能未充分清洗殘留於管道44及45至基 板潔淨池41處之添加劑。 繼使用超臨界C〇2 51沖洗該半導體晶圓之後（圖2〇,關 b超臨界C〇2供應閥46，打開該超臨界流體排放閥47至 ^ 且自管道42及基板潔淨池41排放該超臨界流體 (圖 2D)。The medium pressure between critical pressures or above these conditions. Supercritical fluid. In detail, the temperature is 31. (: and the pressure is 7.38 Mpa, carbon dioxide (C02) becomes a supercritical fluid, and therefore it is not difficult to use from an industrial point of view. However, even if the supercritical fluid C〇2 is used as a clean solution, it is difficult to clean from the object. When dissociating an object, the resist or resist residue for the supercritical fluid C〇2 may therefore not completely remove the resist or resist residue from the object. Therefore, for the object A dissociation chemistry (hereinafter referred to as "additive") to remove the resist or resist residue or a dissociation solvent is added to the supercritical fluid to facilitate removal of the resist mask from the article. Wherein, the dissociation solvent is a dissolution aid for the additive, and is used when the additive may be less soluble in the supercritical fluid co2. U.S. Patent Application Publication No. US2002/0048731 A1 discloses the application of the supercritical fluid. The technique is from a semiconductor substrate (hereinafter, referred to as a wafer removal photoresist film or a photoresist residue (hereinafter referred to as a "resist film method. The method is specifically described as follows. Firstly, a crystal will be used A circle (with a resist deposited on its surface) is placed in the processing chamber of a clean apparatus. Next, the pressure in the pressure chamber is adjusted, and supercritical fluid C〇2 and additives are placed in the pressure chamber. In addition, the pressure in the pressure chamber is adjusted and the supercritical fluid C〇2 and the additive are introduced into the 120275.doc 200811941. The pressure ι to the middle is maintained in the supercritical fluid c〇2 in which the additive is dissolved. The supercritical fluid including the additive is said to contact the anti-recessive film until the anti-surge film is removed from the wafer. After the anti-remaining film is removed from the wafer, the pressure is released and the wafer is cleaned. According to US2GG2/_873i A1 The ^ can not only remove the green film and photoresist residues, but also remove other particles and metal-contaminated materials on the wafer. In addition, if the additive is difficult to dissolve in the supercritical fluid c〇2, then the additive In addition, a dissociation solvent may be added to the supercritical fluid C〇2 as a solvent for combining the additive and the supercritical fluid eh. Through these processes, a supercritical fluid can be used to clean wafers and the like. Ben not A technique is disclosed in the patent application publication No. 11-216437, in which a pressure is rapidly reduced by discharging a supercritical fluid from a clean bath to a separation tank in a supercritical fluid cleaning method. Increasing the flow rate of the supercritical fluid to improve the cleansing effect. Figure 1 is a schematic diagram showing a supercritical fluid cleaning apparatus according to the related art. As shown in Figure 1, a supercritical cleaning apparatus 40 includes a substrate clean tank (i.e., a processing chamber 41, a main pipe (supercritical fluid pipe) 42 for supplying a supercritical fluid (in which a supercritical fluid C〇2 and an additive are mixed) to the substrate cleaning tank 41, one for cleaning from the substrate The tank 41 discharges the discharge conduit 43 for the clean supercritical fluid, and the additive conduits 44 and 45 for supplying the additive to the supercritical c〇2 conduit (main conduit) 42. In this example, the supercritical fluid cleaning apparatus 40 includes two systems of additive conduits 44 and 45. Further, the pipes 42, 43, 44, and 45 respectively have a supercritical 120275.doc 200811941 C〇2 supply valve (open/close valve) 46, a back pressure valve 47, and an additive supply valve (on/off valve) 48 and 49. . In the cleaning apparatus 40, when an object is cleaned, the object such as a semiconductor wafer is placed in the substrate cleaning tank 41. Next, the supercritical C〇2 supply valve 46, the back pressure valve 47 and the two additive supply widths 48 and 49 are opened, and the additive 52 and 53 are added to the supercritical fluid supply of the supercritical C02 51 via the main pipe 42. The substrate cleaning bath 41 is cleaned to clean the wafer. The additive supply valves 48 and 49 are turned off after the wafer is cleaned, and only the supercritical C〇2 5 1 will be supplied to rinse the wafer. After flushing the wafer, the supercritical C〇2 supply valve 46' is closed and the pressure in the substrate clean tank 41 is lowered back to atmospheric pressure. Subsequently, the thus cleaned semiconductor crystal grains are taken out from the substrate cleaning bath 41. SUMMARY OF THE INVENTION The above-described supercritical fluid cleaning is used to prevent damage to a fine structure, that is, to prevent pattern collapse, which occurs during the process of removing the resist mask. However, after cleaning the wafer, there is still an additive dissolved in a supercritical fluid (remaining in the end official channel) that is liquefied under reduced pressure, into the substrate > the clean pool to wet the wafer and thus The problem of the fine structure can be damaged. In addition, since the semiconductor wafer is cleaned and rinsed at a very high pressure using a supercritical fluid, it is difficult to clean the residual additive from the end pipe during the rinsing process. If the pressure in the apparatus returns to normal pressure without the additive being sufficiently cleaned from the end pipe, the liquefied additive rapidly enters the substrate cleaning apparatus to wet the semiconductor wafer. Further, the above problem will be described in detail with reference to FIGS. 2 and 2 to 2D. Note 120275.doc 200811941 means that the dashed lines in Figures 2A to 2D represent supercritical c〇2 flows, and the solid lines represent additives and residual additive streams. Further, in Figs. 2 to 2D, the empty valve indicates that the valve is open and the solid valve indicates that the valve is in the closed state. When the substrate is cleaned (Fig. 2A), the four valves 46, 47, 48 and 49 are all open under the pipe pressure. At this time, although the added additives 52 and 53 are pressurized in the additive pipes 44 and 45, they are usually maintained in the liquid phase. Additives 52 and 53 are added to the supercritical fluid c〇2 5ι to be in a supercritical state. Subsequently, the supercritical fluid to which the additive is added is used to clean the semiconductor wafer in the substrate cleaning bath 41. Next, after cleaning the semiconductor wafer, the additive supply valves 48 and 49 (Fig. 2B) supplied to the additive conduits 44 and 45 for supplying the additive are turned off. At this time, after the additives 52A and 53A flowing at the instant of closing the additive supply valve remain in the knives close to the additive supply valves 48 and 49, the semiconductor wafer is washed only by the supercritical C〇2 5 1 . . Since the pressure of the ramp to the substrate cleaning tank 41 is high, the additives 52A and 53A remaining near the portions of the additive supply valves 48 and 49 are still located in these portions. That is, the additives remaining in the pipes 44 and 45 to the substrate cleaning tank 41 may not be sufficiently cleaned. After the semiconductor wafer is rinsed using the supercritical C〇2 51 (Fig. 2, the b supercritical C〇2 supply valve 46 is opened, the supercritical fluid discharge valve 47 is opened and discharged from the pipe 42 and the substrate clean tank 41. The supercritical fluid (Fig. 2D).
$時，由於管道42及基板潔淨池41中之壓力降低，殘留 ;近加劑供應閥48及49之部分處之添加劑52A及53A 120275.doc 200811941 在液化狀態下由於壓差而 ^ ^ W且進入基板潔淨池41中 (參看圖2D之放大視圖）。因此， 添加劑52A及53A而變渴，且由於該㈣ 支濕且其精細結構可能受到損壞。 因此，該超臨界技術可能未得到充分利用。 1匕1卜’若添加料如上述經充分清洗，則在下-晶圓處 用㈣官道添加另__添加劑時，該等添加劑混 合，造成不可執行意欲執行之處理之問題。At time, the pressure in the pipe 42 and the substrate cleaning tank 41 is lowered, and the additives 52A and 53A 120275.doc 200811941 in the portions of the near-supply supply valves 48 and 49 are liquefied due to the pressure difference. Enter the substrate cleaning tank 41 (see enlarged view of Fig. 2D). Therefore, the additives 52A and 53A become thirsty, and since the (four) branch is wet and its fine structure may be damaged. Therefore, this supercritical technology may not be fully utilized. If the additive is sufficiently cleaned as described above, when the other additive is added to the lower wafer at the lower wafer, the additives are mixed, causing the problem that the intended treatment cannot be performed.
作為另-清洗添加劑之方法，可能存在__方法： 該半導體晶圓時，該方法造成A量超臨界⑶251^且替As a method of cleaning the additive, there may be a method of __: in the case of the semiconductor wafer, the method causes a quantity of supercritical (3) 251 ^ and
代殘留於罪近添加劑供應閥48及49之部分處之添加劑52A 及53A。然而在此情況下’可能存在有關成本及處理時間 週期的問題。 需要提供-潔淨方法及一潔淨設備，其中繼潔淨一晶圓 之後，可充分清洗殘留於管道内之添加劑。 根據本發明之—實施例’提供―潔淨方法，其中在沖洗 處理時’打開一自一添加劑管道分支的分支管道之背壓 閥，且在該添加劑管道及該分支管道中循環—超臨界流體 以自該添加劑管道清洗殘餘添加劑。 根據本發明之一實施例，提供一潔淨方法，其中在沖洗 處理時，打開該分支管道之背壓閥以降低且釋放添加劑管 道中之壓力，因此與殘餘添加劑一起經由該添加劑管道及 該分支管道排放超臨界流體以清洗殘餘添加劑。 根據本發明之一實施例，提供一潔淨方法，其中在完成 沖洗處理時，打開自該添加劑管道分支的分支管道之背壓 120275.doc 11 200811941 閥，且使用該處理腔室内之高壓與藉由打開該背壓閥引起 之低壓之間的壓差經由該分支管道自添加劑管道清洗殘餘 添加劑。 在根據本發明之一實施例之潔淨方法中，繼沖洗處理之 後’藉由打開該A支管道之背壓閥來降低且釋纟添加劑管 道中之壓力’因此與殘餘添加劑一起經由該添加劑管道及 該分支管道排放超臨界流體以清洗殘餘添加劑。The additives 52A and 53A remaining in the portion of the sin near additive supply valves 48 and 49 are substituted. However, in this case, there may be problems related to cost and processing time period. It is necessary to provide a clean method and a clean device, which can fully clean the additives remaining in the pipeline after relaying a wafer. According to an embodiment of the present invention, there is provided a "cleaning method" in which a back pressure valve of a branch pipe branching from an additive pipe branch is opened during the rinsing process, and a supercritical fluid is circulated in the additive pipe and the branch pipe The residual additive is cleaned from the additive pipe. According to an embodiment of the present invention, a cleaning method is provided in which a back pressure valve of the branch pipe is opened to reduce and release pressure in the additive pipe during the rinsing process, thereby passing the additive pipe and the branch pipe together with the residual additive The supercritical fluid is discharged to clean residual additives. According to an embodiment of the present invention, a cleaning method is provided in which a back pressure 120275.doc 11 200811941 valve of a branch pipe branched from the additive pipe is opened when the flushing process is completed, and the high pressure and the use in the processing chamber are used The pressure difference between the low pressures caused by opening the back pressure valve cleans residual additives from the additive conduit via the branch conduit. In a cleaning method according to an embodiment of the present invention, after the rinsing treatment, 'the pressure in the additive conduit is reduced and released by opening the back pressure valve of the A-branch pipe', thus, together with the residual additive, via the additive conduit and The branch conduit discharges a supercritical fluid to clean residual additives.
根據本發明之另一實施例，提供一潔淨設備，其中藉由 供應一具有一添加劑之超臨界流體來在一處理腔室中^淨 -物件，且其中僅使㈣超臨界流體沖洗該物件。㈣淨 設備包括-主管道、一排放管道、一添加劑管道及一分支 管道。該主管道經由-開/關閥供應該超臨界流體至一潔 淨池。該排放管道經由一第一背壓閥自該處理腔室排放該 超臨界流體。該添加劑管道經由用於添加劑之—第一開/ 關閥及-第二開/關閥供應一添加劑至該主管道。該分支 管道自該第-開/關閥與該第二開/關閥之間的一中間部分 分支，其包括一背壓閥。 在根據本發明之一實施例之省、、备 1』< 4淨设備中，該添加劑管道 具備该弟一開/關閥及該第-聞/關 /昂一開/關閥，且該分支管道（包括 該背壓閥）自該兩個開/關閥之由 闹阀之中間部分分出。因此，若在 完成潔淨處理後沖洗處理時，介％ 各 f亦即，在即將結束沖洗處理 之前，藉由打開該分支管道之昔 、<月壓閥來降低添加劑管道中 之壓力，則與超臨界流體一叔6 起自該添加劑管道及自該分支 管道排放殘餘添加劑以清洗殘餘添加劑。 120275.doc -12· 200811941 此外’繼結束沖洗處理之後’若藉由打開該分支管道之 背壓閥來降低該添加劑管道内之壓力，則與該超臨界流體 一起自該添加劑管道經由該分支管道排放該殘餘添加劑以 清洗該殘餘添加劑。 在根據本發明之實施例之潔淨方法及潔淨設備中，可自 該添加劑管道充分清洗殘餘添加劑。因此，繼潔淨處理及 沖洗處理之後，當基板潔淨池中之壓力降低時（當基板潔 淨池中之壓力返回至大氣壓時），防止液化添加劑流入該In accordance with another embodiment of the present invention, a cleaning apparatus is provided in which a supercritical fluid having an additive is supplied to clean a workpiece in a processing chamber, and wherein only the (four) supercritical fluid is flushed. (4) The net equipment includes a main pipe, a discharge pipe, an additive pipe and a branch pipe. The main conduit supplies the supercritical fluid to a clean pool via an on/off valve. The discharge conduit discharges the supercritical fluid from the processing chamber via a first back pressure valve. The additive conduit supplies an additive to the main conduit via a first on/off valve and a second on/off valve for the additive. The branch pipe branches from an intermediate portion between the first on/off valve and the second on/off valve, and includes a back pressure valve. In the cleaning device according to an embodiment of the present invention, the additive pipe is provided with the first opening/closing valve and the first-sense/off/on-one opening/closing valve, and the The branch pipe (including the back pressure valve) is branched from the middle portion of the two open/close valves by the valve. Therefore, if the rinsing process is completed after the cleaning process is completed, the amount of each f, that is, the pressure in the additive pipe is lowered by opening the branch pipe and the <month pressure valve, just before the rinsing process is finished, The supercritical fluid, uncle 6 , is discharged from the additive conduit and from the branch conduit to remove residual additives to clean residual additives. 120275.doc -12· 200811941 In addition, 'after the end of the rinsing process', if the pressure in the additive pipe is reduced by opening the back pressure valve of the branch pipe, the branch pipe is fed from the additive pipe together with the supercritical fluid The residual additive is discharged to wash the residual additive. In the cleaning method and cleaning apparatus according to the embodiment of the present invention, the residual additive can be sufficiently cleaned from the additive piping. Therefore, after the cleaning treatment and the rinsing treatment, when the pressure in the substrate clean pool is lowered (when the pressure in the substrate cleaning tank returns to atmospheric pressure), the liquefaction additive is prevented from flowing into the
處理腔室中係可能的。因此，可防止諸如—物件之精細結 構由於液化添加劑而受損及該物件變濕之問題。此外，即 便在隨後處理中使用相同管道添加另一添加劑至該物件之 情況下，可防止添加劑混合且因此可執行所意欲之處理。 【實施方式】 ，據本發明之實施例，提供—自用於供應添加劑之添加 劑管道分支且連接至一背壓閥之分離管路（亦即，一分支 另外，在一用於供應超臨界流體之連接主管道與 =分支管道之間的-位置處為該添加㈣道提供一開/關 一根據本發明之實施例之潔淨方法，亦即，一白 劑管道清洗殘餘添加劑之方法係使用之: 二(為其之-特徵)而執行。根據第-方法，當使用超 界流體沖洗一物件時，打 " 與超臨界流ml 自添加劑管道 管道分支的分支管道之背壓閱控制壓力。添加劑 得疋而言，關閉 120275.doc -13- 200811941 開該分支管道之背壓 該處理腔室之排放管道之背壓閥且打It is possible to process in the chamber. Therefore, problems such as damage to the fine structure of the article due to the liquefaction additive and the object becoming wet can be prevented. Further, even in the case where another additive is added to the article using the same pipe in the subsequent treatment, the additive mixing can be prevented and thus the intended treatment can be performed. [Embodiment] According to an embodiment of the present invention, there is provided a separation line branched from an additive pipe for supplying an additive and connected to a back pressure valve (that is, a branch is additionally provided for supplying a supercritical fluid A cleaning method according to an embodiment of the present invention is provided for the addition (four) channel at a position between the connection main pipe and the = branch pipe, that is, a method for cleaning the residual additive in a white agent pipe is used: Executing the second (for its characteristics). According to the first method, when flushing an object with a supercritical fluid, the control pressure is pressed against the back of the branch pipe branching from the additive pipeline with the supercritical fluid ml. For the sake of success, close 120275.doc -13- 200811941 to open the back pressure valve of the discharge pipe of the processing chamber and hit the back pressure valve
閥，以使超臨界流體流至添加劑管道及該分支管道中，從 而與超臨界流體一起清洗殘餘添加劑。此外，完成沖洗= 理(包括自添加劑管道清洗殘餘物)時，關閉上述在一連接 主管道與該分支管道之間的一位置處為該添加劑管道提供 之開/關閥。因此’自該開/關閥至該背壓閥之管道壓力返 回至常壓’以進一步有助於排放殘餘添加劑。繼沖洗處理 之後’打開該處理腔室之排放管道之背壓閥，以使該處理 腔室中之壓力返回至常壓。經由該等操作 管道内之殘餘添加劑流入處理腔室中。 可防止添加劑 流體-起排放出該背壓閥。此外，藉由繼打開該背壓闕之 n胃卩關閉開/關閥’自開/關闕至該背壓闊之管道返回至 常壓’以進一步有助於排放添加劑。、繼關閉該開/關閱之 後’打開直接連接至該處理腔室之f壓閥，以使該處理腔 室中之壓力返回至常壓。根據上述操作及壓力控制，可防 根據第二方法，在使用超臨界流體完成物件沖洗時，在 超臨界狀態下打開自該添加劑管道分支之背壓閥，以保持 足夠高之壓力。使用處理腔室中之高壓與藉由打開分支管 道中之背壓閥引起之低壓之間的壓差’添加劑隨同超臨界 止殘留在該添加劑管道中之添加劑流入該處理腔室中。 在本發明之實施例中’可使用任何材料，只要該材料能 夠相變為超臨界流體"交佳使用在大體常溫、相對較低壓 =條件下可相變為超臨界流體之二氧化碳氣體作為超臨界 流體產生材料。能夠相變為超臨界流體之其他材料具有其 120275.doc -14· 200811941 自身之超臨界條件。 另外，在本發明之實施例中，至少選自HF、基於羥基 胺之添加齊1、基於烷醇胺之添加劑、基於烷矽胺 (alkysilamine)之添加劑、氟化銨、水、ιρΑ、甲醇、乙 醇、異丙醇、乙二醇、丙酮、甲乙基酮、二甲亞砜及Μ·甲 基吡咯啶之任何材料可用作該添加劑。根據本發明之實施 例，可使用一種添加劑，或兩種或兩種以上添加劑之混合 物。 以下將參考圖來詳細描述本發明之實施例。 圖3為展示一根據本發明之一實施例使用一 之潔淨設備之目。 ία 如圖3中所示，一根據本發明之實施例之潔淨設備，亦 即一超臨界潔淨設備〗包括一處理腔室2、一主管道3、添 加劑嘗道4及5，及一排放管道6。將一物件置於該處理腔 室（下文稱作”基板潔淨池”，根據該實施例在此處潔淨晶 圓）2中。主管道3供應超臨界c〇2 21至該基板潔淨池2作為 超臨界流體。根據此實施例，添加劑管道4及5連接至主管 道3，且分別供應兩種添加劑22及23。排放管道轉放該基 板潔淨池2中所使用之超臨界流體。主管道3具備一用於供 應超臨界C〇2之開/關閥7，排放管道6具備一背壓閥1〇，且 添加劑管道4及5具備用於供應添加劑之第一開/關閥8及 9 〇 另外’根據本發明之實施例，在一連接主管道3與第一 開/關閥8及9之間的一位置處為添加劑管道4及$提供第二 120275.doc •15- 200811941 開/關閥！5及16。自一個添 二開/關閥a ^ s道4之弟一開/關閥8與第 ’關間15之間的一中間部分分出一分支管道心又， :另二加劑管道5之第一開/關闕9與第二開卿6之間 八別且：：刀分出一分支管道12。該兩個分支管道11及12 分別具備背壓閥13及14。 排放管道6之㈣闕10及分支管道1⑽之背壓闕13及 14為可用來控制壓力之閥。A valve to cause the supercritical fluid to flow into the additive conduit and the branch conduit to clean residual additive with the supercritical fluid. In addition, upon completion of the flushing (including the cleaning of the additive pipe cleaning residue), the above-described opening/closing valve provided for the additive pipe at a position between the connecting main pipe and the branch pipe is closed. Therefore, the pipe pressure from the opening/closing valve to the back pressure valve is returned to the normal pressure to further contribute to the discharge of residual additives. The back pressure valve of the discharge conduit of the processing chamber is opened after the rinsing process to return the pressure in the processing chamber to normal pressure. Residual additives in the operating conduits flow into the processing chamber. It prevents the additive fluid from discharging out of the back pressure valve. In addition, the additive is further assisted by opening the back pressure/pressure valve to close the on/off valve 'from opening/closing to returning the back pressure to the normal pressure'. After the opening/closing is turned off, the pressure valve directly connected to the processing chamber is opened to return the pressure in the processing chamber to normal pressure. According to the above operation and pressure control, according to the second method, when the object is flushed using the supercritical fluid, the back pressure valve branched from the additive pipe is opened in a supercritical state to maintain a sufficiently high pressure. The pressure difference between the high pressure in the processing chamber and the low pressure caused by opening the back pressure valve in the branch pipe' additive flows into the processing chamber along with the supercritical residual additive in the additive conduit. In the embodiment of the present invention, 'any material can be used as long as the material can be transformed into a supercritical fluid" as a carbon dioxide gas which can be converted into a supercritical fluid at a substantially normal temperature and a relatively low pressure=condition Supercritical fluid produces materials. Other materials capable of phase change into supercritical fluids have their own supercritical conditions of 120275.doc -14· 200811941. Further, in an embodiment of the present invention, at least selected from the group consisting of HF, hydroxylamine-based addition 1, alkanolamine-based additive, alkysilamine-based additive, ammonium fluoride, water, ΑρΑ, methanol, Any material of ethanol, isopropanol, ethylene glycol, acetone, methyl ethyl ketone, dimethyl sulfoxide and hydrazine methyl pyrrolidine can be used as the additive. According to an embodiment of the present invention, an additive or a mixture of two or more additives may be used. Embodiments of the present invention will be described in detail below with reference to the drawings. Figure 3 is a diagram showing the use of a clean apparatus in accordance with one embodiment of the present invention. Ία As shown in FIG. 3, a cleaning apparatus according to an embodiment of the present invention, that is, a supercritical cleaning apparatus, includes a processing chamber 2, a main pipe 3, additive tastings 4 and 5, and a discharge pipe. 6. An object is placed in the processing chamber (hereinafter referred to as "substrate clean bath", in which the crystal is cleaned according to this embodiment). The main pipe 3 supplies supercritical c〇2 21 to the substrate clean tank 2 as a supercritical fluid. According to this embodiment, the additive pipes 4 and 5 are connected to the main pipe 3, and two kinds of additives 22 and 23 are supplied, respectively. The discharge pipe transfers the supercritical fluid used in the substrate clean tank 2. The main pipe 3 is provided with an on/off valve 7 for supplying a supercritical C〇2, the discharge pipe 6 is provided with a back pressure valve 1〇, and the additive pipes 4 and 5 are provided with a first on/off valve 8 for supplying an additive. And 9 〇 additionally, according to an embodiment of the present invention, a second portion of the additive pipe 4 and $ is provided at a position between the main pipe 3 and the first on/off valves 8 and 9 120275.doc • 15 - 200811941 Open/close valve! 5 and 16. From the middle of a second open/close valve a ^ s road 4, an intermediate part between the opening/closing valve 8 and the 'closed room 15 is divided into a branch pipe heart, and the other two dosing pipe 5 An open/closed 9 and a second open 6 are separated: and the knife divides a branch pipe 12. The two branch pipes 11 and 12 are provided with back pressure valves 13 and 14, respectively. The back pressures 13 and 14 of the (4) 阙 10 of the discharge pipe 6 and the branch pipe 1 (10) are valves for controlling the pressure.
接著’將以操作過程來描述-使用根據該實施例之超臨 界潔甲設備1來潔淨例如半導體晶圓(下文稱作"晶圓，之物 件的潔淨方法之第一實施例。 圖4A至4E為展示彼等操作過程之各別圖。應注意，圖 4A至4E中空閥表示閥處於打開狀態，且實心閥表示閥處 於關閉狀態。X，粗虛線表示超臨界c〇2流，且粗實線表 示添加劑及其殘餘物流。 首先’將一晶圓容納且置於基板潔淨池2中。接著，如 圖4A中所示，執行潔淨處理。特定而言，打開開/關閥7及 背壓閥10，以保持一超臨界狀態，且經加熱且加壓之超臨 界C02 21經由主管道3供應至該基板潔淨池2。此外，在分 支管道11及12之背壓閥13及14關閉之狀態下，打開添加劑 管道4及5之第一開/關閥8及9及第二開/關閥15及16。因 此，第一及第二添加劑22及23經由添加劑管道4及5供應以 添加至主管道3中之超臨界c〇2 21。含有第一及第二添加 劑22及23(溶於超臨界c〇2 21中）之超臨界流體供應至基板 潔淨池2中以潔淨晶圓。 120275.doc -16 - 200811941 接著’使用含有經溶解之添加劑之超臨界流體完成潔淨 過程後，如圖4B中所示，在含有經溶解之添加劑之超臨界 流體被純的超臨界流體替代的同時執行沖洗處理。特定而 言，維持分支管道11及12之背壓閥13及14之關閉狀態，且 關閉添加劑管道4及5之第一開/關閥8及9以停止供應第一 及第二添加劑22及23。在此狀態下，僅供應超臨界c〇2 21，且使用超臨界C〇2 21沖洗置於基板潔淨池2中之晶Next, 'will be described in the operation process--using the supercritical armor apparatus 1 according to this embodiment to clean a first embodiment of a semiconductor wafer (hereinafter referred to as "wafer, object cleaning method. Fig. 4A 4E is a separate diagram showing their operation. It should be noted that the hollow valves of Figures 4A to 4E indicate that the valve is open, and the solid valve indicates that the valve is closed. X, thick dashed line indicates supercritical c〇2 flow, and coarse The solid line indicates the additive and its residual stream. First, a wafer is accommodated and placed in the substrate cleaning tank 2. Next, as shown in Fig. 4A, a clean process is performed. Specifically, the on/off valve 7 and the back are opened. The valve 10 is pressurized to maintain a supercritical state, and the heated and pressurized supercritical CO 2 21 is supplied to the substrate cleaning tank 2 via the main pipe 3. Further, the back pressure valves 13 and 14 of the branch pipes 11 and 12 are closed. In the state, the first opening/closing valves 8 and 9 and the second opening/closing valves 15 and 16 of the additive pipes 4 and 5 are opened. Therefore, the first and second additives 22 and 23 are supplied via the additive pipes 4 and 5 Supercritical c〇2 21 added to the main pipe 3. Contains the first And the supercritical fluids of the second additives 22 and 23 (dissolved in the supercritical c〇2 21) are supplied to the substrate cleaning bath 2 to clean the wafer. 120275.doc -16 - 200811941 Then 'use the additive containing the dissolved After the supercritical fluid completes the cleaning process, as shown in Figure 4B, the rinsing process is performed while the supercritical fluid containing the dissolved additive is replaced by the pure supercritical fluid. In particular, the back of the branch pipes 11 and 12 are maintained. The pressure valves 13 and 14 are closed, and the first on/off valves 8 and 9 of the additive pipes 4 and 5 are closed to stop supplying the first and second additives 22 and 23. In this state, only the supercritical c〇 is supplied. 2 21, and using supercritical C〇2 21 to rinse the crystal placed in the substrate clean bath 2
圓。在沖洗處理期間，在使用背壓閥丨〇調節流體壓力情況 下排放該超臨界流體的同時沖洗晶圓。舉例而言，由於在 溫度為31。(：、壓力為7·38 MP^c〇2變為超臨界，在高於 上述溫度及壓力之條件下該背壓閥1〇打開。在沖洗處理 中，由於第一開/關閥8及9之下游側處之添加劑管道4及5 亦、、二冲洗，罪近第一開/關閥8及9之部分處殘留部分添加 劑 22A及 23 A。 接者，在沖洗處理期間，如圖4C中所示，在即將結束根 據此實施例之沖洗處理之前，自添加劑管道4及5清洗殘餘 添加劑22A及23A。特定而t，在、、中、秦垮 、 管道4及5之背壓閥！3及14。當打開背壓閥似叫，同時 關閉排放管道6之背壓閥1〇。此時，背麼閥⑽"打開， 同時將基板潔淨池2内之沖洗超臨界流體維持於—溫度及 一遷力下以保持超臨界狀態°因& ’超臨界C〇2 21^添 加劑管道4及5及分支管道11及12而排放。同 W W β 冋時，殘餘添加 剑22八及23八亦隨超臨界(：：〇 21排放出，日：^4 + 5之内部經清洗。 卜放出且添加劑管道4及 120275.doc •17- 200811941 接著，如圖4D中所示，繼添加劑管道4及5之内部由超臨 界C〇2 21充分替代之後，關閉添加劑管道4及5之第二開/ 關閥1 5及16。因此，結束沖洗處理。此時，分支管道11及 12之背壓閥13及14較佳應處於打開狀態。當打開分支管道 11及12之背壓閥13及14時，自第二開/關閥15及16至背壓 閥13及14之管道返回至常壓。因此，可能有助於排放少量 殘留於添加劑管道4及5中之添加劑。circle. During the rinsing process, the wafer is rinsed while discharging the supercritical fluid while adjusting the fluid pressure using a back pressure valve. For example, because the temperature is 31. (:, the pressure is 7.38 MP^c〇2 becomes supercritical, and the back pressure valve 1〇 is opened under conditions higher than the above temperature and pressure. In the flushing process, due to the first on/off valve 8 and Additives pipes 4 and 5 at the downstream side of 9 are also flushed, and some of the additives 22A and 23A are left near the first opening/closing valves 8 and 9. In the rinsing process, as shown in Fig. 4C As shown in the figure, the residual additives 22A and 23A are cleaned from the additive pipes 4 and 5 just before the rinsing process according to this embodiment is completed. Specifically, t, the back pressure valves in the middle, the middle, the sputum, the pipes 4 and 5! 3 and 14. When the back pressure valve is opened, the back pressure valve 1 of the discharge pipe 6 is closed. At this time, the back valve (10) " is opened, and the flushing supercritical fluid in the substrate cleaning tank 2 is maintained at the same temperature. And a force to maintain the supercritical state ° due to & 'supercritical C 〇 2 21 ^ additive pipelines 4 and 5 and branch pipelines 11 and 12 emissions. With WW β 冋, the residual added sword 22 eight and 23 eight Also with supercritical (:: 〇21 emissions, day: ^4 + 5 inside the cleaning. Bu released and additive pipeline 4 and 120275.doc • 17- 200811941 Next, as shown in FIG. 4D, after the inside of the additive pipes 4 and 5 is sufficiently replaced by the supercritical C〇2 21, the second on/off valves of the additive pipes 4 and 5 are closed. 1 5 and 16. Therefore, the rinsing process is ended. At this time, the back pressure valves 13 and 14 of the branch pipes 11 and 12 should preferably be in an open state. When the back pressure valves 13 and 14 of the branch pipes 11 and 12 are opened, The pipes of the second on/off valves 15 and 16 to the back pressure valves 13 and 14 are returned to normal pressure. Therefore, it may be helpful to discharge a small amount of additives remaining in the additive pipes 4 and 5.
接著’如圖4E中所示，基板潔淨池2之内部返回至常壓 (大氣壓）。特定而言，關閉主管道3之開/關閥7、添加劑管 道4及5之第一開/關閥8及9及第二開/關閥15及16，且接著 打開排放管道6之背壓閥10。此時，由於第二開/關閥15及 16關閉，即便當少量添加劑殘留於添加劑管道4及$中時， 可防止殘留添加劑液化且進入基板潔淨池2中。隨後，停 止供應超臨界C〇2 21，基板潔淨池2中壓力返回至常壓， 且結束基板潔淨處理。 根據該潔淨方法之第—實施例，在沖洗處理期間可自添 加劑管道4及5清洗殘餘添加劑。因此，繼結束沖洗處理之 後，當基板潔淨池2中之壓力返回至常㈣，可防止殘餘 添加劑流入基板潔淨池2中。 接著’將以操作過程來描述—用於使用圖3中所示 臨界潔淨設備1潔淨—物件之潔淨方法的 圖5A至5E為展示彼等操作過程之圖。應注意，圖5八至 =空：表=處於打開狀態’且實心閱表示間處於關閉 ^，粗虛線表示超臨界c〇2流，且粗實線表示添加 120275.doc -18- 200811941 劑及殘餘添加劑流。 首先，將一晶圓容納且置於該基板潔淨池2中。接著， 如圖5 A中所不，執行潔淨處理。特定而言，打開開/關閥7 及背壓閥10，以保持一超臨界狀態，且經加熱且加壓之超 臨界C〇2 21經由主管道3供應至該基板潔淨池2。此外，在 分支管道11及12之背壓閥13及14關閉之狀態下，打開添加 劑管道4及5之第一開/關閥8及9及第二開/關閥15及16。因 此，苐一及弟一添加劑22及23經由添加劑管道4及5供應以 添加至主管道3中之超臨界c〇2 21。含有第一及第二添加 劑22及23(溶於超臨界c〇2 21中）之超臨界流體供應至基板 潔淨池2中以潔淨晶圓。 接著，使用含有經溶解之添加劑之超臨界流體完成潔淨 過程後，如圖5B中所示，在含有經溶解之添加劑之超臨界 流體被純的超臨界流體替代的同時執行沖洗處理。特定而 言，維持分支管道11及12之背壓閥13及14之關閉狀態，且 關閉添加劑管道4及5之第一開/關閥8及9以停止供應第一 及第二添加劑22及23。在此狀態下，僅供應超臨界c〇2 21，且使用超臨界c〇2 21沖洗置於基板潔淨池2中之晶 圓在沖洗處理期間，在使用背壓閥1 〇調節流體壓力情況 下排放該超臨界流體的同時沖洗晶圓。舉例而言，由於在 溫度為311、壓力為7,38 MPaTc〇2變為超臨界，在高於 上述溫度及壓力之條件下該背壓閥1〇打開。在沖洗處理 中，由於第一開/關閥8及9之下游側處之添加劑管道4及5 亦經沖洗，靠近第一開/關閥8及9之部分處殘留部分添加 120275.doc 19 - 200811941 劑 22A及 23A。 接著如圖5C中所示，關閉主管道3之開/關閥7。同時， 關閉排放管道6之背壓闊1〇，且結束沖洗處理。 接著，如圖5D中所示，繼結束沖洗處理之後，打開分支 管道11及12之背壓閥13及14以自添加劑管道4及5清洗殘餘 添加劑22A及23A。特定而言，在使用超臨界c〇2 21完成 沖洗處理時，在基板潔淨池2由超臨界c〇2保持於充分高壓 的同時’同時打開分支管道4及5之背壓閥13及14。由於 C〇2在溫度為31°C、壓力為7.38 MPa下變為超臨界狀態， 在兩於上述溫度及壓力之條件下背壓閥13及14打開。因 此，藉由使用基板潔淨池2中之高壓與藉由打開背壓閥13 及14引起之大氣壓之間的壓差，添加劑管道4及5中之殘餘 添加劑22A及23A及超臨界C〇2 21自背壓閥13及14排放 出，且管道被清洗。 接著，如圖5E中所示，繼打開背壓閥13及14之後，立即 關閉添加劑管道4及5之第二開/關閥15及16。因此，即便 >里添加劑殘留於添加劑管道4及5中，可防止殘留添加劑 液化且進入基板潔淨池2中。隨後，自第一開/關閥8及9至 背壓閥13及14之管道中之壓力返回至常壓，且進一步有助 於排放添加劑。 龜關閉第一開/關閥15及16之後，打開基板潔淨池2之排 放管道6之背壓閥1〇，且基板潔淨池2中之壓力返回至常壓 以結束潔淨處理。 根據該潔淨方法之第二實施例，繼沖洗處理結束之後， 120275.doc -20- 200811941 可使用基板潔淨池2中所維持之高壓與藉由打開背壓閥13 及14而引起之大氣壓之間的壓差清洗殘餘添加劑22A及 23 A。因此，完成沖洗處理時，當基板潔淨池2中之壓力返 回至常壓時，可防止殘餘添加劑進入基板潔淨池2中。 根據該第一實施例，潔淨過程之數目減少，因為在沖洗 處理期間可清洗添加劑管道4及5。根據該第二實施例，成 本降低，因為可在停止供應超臨界流體C〇2 21之後清洗添 加劑管道4及5，此防止浪費大量超臨界流體c〇2。此外， 基板潔淨池2中之壓力保持於高壓，以維持超臨界狀態， 且該第二實施例使用基板潔淨池2之内部保持於高壓的事 實。因此，超臨界潔淨之特性可充分用於第二實施例中。 如上所述，根據該等實施例之超臨界潔淨方法及超臨界 房、淨e又備’可防止殘留於末端管道中之超臨界流體中之添 加劑在潔淨晶圓之後的降低壓力階段液化，且防止其沖入 基板潔淨池中而潤濕晶圓且損壞精細結構。因此，可充分 執行超臨界流體基板清洗，其中使用超臨界流體以防止該 精細結構經液體接觸而受到損壞，諸如發生於抗蝕遮罩移 除過程中之圖案崩潰。 此外，根據該實施例之超臨界基板潔淨設備，即便在下 一晶圓處理中自相同管道添加另一添加劑，可防止該等添 加劑混合，且可根據目的而執行處理。 根據上述實施例，使用能夠控制壓力之背壓閥來調節壓 力，然而，在可使用開/關閥控制設備中之壓力時，可清 洗該等添加劑。 120275.doc •21· 200811941 另外，根據上述實施例，提供兩個添加劑管道系統，然 而，藉由類似設置背壓閥及開/關龆 〜人闭/關闕，根據所使用添加劑 之數目增加系統之數目係可能的。 應注意’在上述實施例中可#代地使用—包括溶於有機 溶劑（例如甲醇）中之添加劑（化學製品）之超臨界流體來潔 淨晶圓。隨後，在後續沖洗處理中可執行使用有機溶劑 (例如甲醇）之沖洗處理及僅使用超臨界流體之沖洗處理。 根據本發明實施例之潔淨方法應用於潔淨半導體基板。 應瞭解，本發明不限於彼等實施例，且根據本發明之一實 施例之潔淨方法可應用於潔淨其他物件，諸如潔淨光遮罩 及液晶顯示基板。 熟習此項技術者應瞭解，可視設計需求及其他因素進行 各種修改、組合、次組合及更改，只要其處於隨附申請專 利範圍或其均等物之範疇内。 【圖式簡單說明】 圖1為展不一根據相關技術之靠近一基板潔淨池之超臨 界基板潔淨设備之一部分之示意圖； 圖2A至2D為展示一使用根據相關技術之超臨界基板潔 淨設備之潔淨方法之示意過程圖； 圖3為展示一根據本發明之一實施例的靠近一基板潔淨 池之超臨界流體基板潔淨設備之一部分之示意圖·， 圖4A至4E為展示一根據本發明之第一實施例之超臨界 基板潔淨方法之示意過程圖；及 圖5A至5Έ為展示一根據本發明之第二實施例之超臨界 120275.doc -22- 200811941 基板潔淨方法之示意過程圖。 【主要元件符號說明】Next, as shown in Fig. 4E, the inside of the substrate cleaning tank 2 is returned to normal pressure (atmospheric pressure). Specifically, the opening/closing valve 7 of the main pipe 3, the first opening/closing valves 8 and 9 of the additive pipes 4 and 5, and the second opening/closing valves 15 and 16 are closed, and then the back pressure of the discharge pipe 6 is opened. Valve 10. At this time, since the second opening/closing valves 15 and 16 are closed, even when a small amount of the additive remains in the additive pipes 4 and $, the residual additive can be prevented from being liquefied and entering the substrate cleaning tank 2. Subsequently, the supply of the supercritical C〇2 21 is stopped, the pressure in the substrate cleaning tank 2 is returned to the normal pressure, and the substrate cleaning process is ended. According to the first embodiment of the cleaning method, the residual additive can be cleaned from the additive pipes 4 and 5 during the rinsing process. Therefore, after the end of the rinsing treatment, when the pressure in the substrate cleaning tank 2 is returned to the normal (four), the residual additive can be prevented from flowing into the substrate cleaning tank 2. Next, Figs. 5A to 5E, which will be described by the operation process, for the cleaning method using the critical cleaning apparatus 1 clean-object shown in Fig. 3, are diagrams showing the operation processes thereof. It should be noted that Figure 5-8 to = empty: Table = in the open state 'and the solid reading is in the closing ^, the thick dashed line indicates the supercritical c〇2 flow, and the thick solid line indicates the addition of 120275.doc -18- 200811941 agent and Residual additive stream. First, a wafer is housed and placed in the substrate cleaning tank 2. Next, as shown in Fig. 5A, a clean process is performed. Specifically, the on/off valve 7 and the back pressure valve 10 are opened to maintain a supercritical state, and the heated and pressurized supercritical C〇2 21 is supplied to the substrate cleaning tank 2 via the main pipe 3. Further, in the state where the back pressure valves 13 and 14 of the branch pipes 11 and 12 are closed, the first opening/closing valves 8 and 9 and the second opening/closing valves 15 and 16 of the additive pipes 4 and 5 are opened. Therefore, the first and second additives 22 and 23 are supplied via the additive pipes 4 and 5 to be added to the supercritical c〇2 21 in the main pipe 3. A supercritical fluid containing first and second additives 22 and 23 (dissolved in supercritical c〇2 21) is supplied to the substrate cleaning bath 2 to clean the wafer. Next, after the cleaning process is completed using the supercritical fluid containing the dissolved additive, as shown in Fig. 5B, the rinsing treatment is performed while the supercritical fluid containing the dissolved additive is replaced by the pure supercritical fluid. Specifically, the closed state of the back pressure valves 13 and 14 of the branch pipes 11 and 12 is maintained, and the first open/close valves 8 and 9 of the additive pipes 4 and 5 are closed to stop supplying the first and second additives 22 and 23 . In this state, only the supercritical c〇2 21 is supplied, and the wafer placed in the substrate cleaning tank 2 is flushed using the supercritical c〇2 21 during the rinsing process, under the condition of adjusting the fluid pressure using the back pressure valve 1 〇 The wafer is rinsed while discharging the supercritical fluid. For example, since the temperature is 311 and the pressure is 7,38 MPa, Tc 〇 2 becomes supercritical, and the back pressure valve 1 〇 is opened at a temperature higher than the above temperature and pressure. In the rinsing process, since the additive pipes 4 and 5 at the downstream side of the first opening/closing valves 8 and 9 are also flushed, the residual portion near the first opening/closing valves 8 and 9 is added 120275.doc 19 - 200811941 Agents 22A and 23A. Next, as shown in Fig. 5C, the opening/closing valve 7 of the main pipe 3 is closed. At the same time, the back pressure of the discharge pipe 6 is closed by 1 〇, and the rinsing process is ended. Next, as shown in Fig. 5D, after the end of the rinsing process, the back pressure valves 13 and 14 of the branch pipes 11 and 12 are opened to clean the residual additives 22A and 23A from the additive pipes 4 and 5. Specifically, when the flushing treatment is completed using the supercritical c〇2 21, the back pressure valves 13 and 14 of the branch pipes 4 and 5 are simultaneously opened while the substrate cleaning tank 2 is maintained at a sufficiently high pressure by the supercritical c〇2. Since C 〇 2 becomes a supercritical state at a temperature of 31 ° C and a pressure of 7.38 MPa, the back pressure valves 13 and 14 are opened under the conditions of the above temperature and pressure. Therefore, the residual additives 22A and 23A and the supercritical C〇2 21 in the additive pipes 4 and 5 are used by using the pressure difference between the high pressure in the substrate cleaning tank 2 and the atmospheric pressure caused by opening the back pressure valves 13 and 14. The back pressure valves 13 and 14 are discharged, and the pipes are cleaned. Next, as shown in Fig. 5E, the second opening/closing valves 15 and 16 of the additive pipes 4 and 5 are immediately closed after the back pressure valves 13 and 14 are opened. Therefore, even if the additive remains in the additive pipes 4 and 5, the residual additive can be prevented from being liquefied and entering the substrate cleaning tank 2. Subsequently, the pressure in the pipes from the first on/off valves 8 and 9 to the back pressure valves 13 and 14 is returned to the normal pressure, and further contributes to the discharge of the additive. After the turtle closes the first opening/closing valves 15 and 16, the back pressure valve 1 of the discharge pipe 6 of the substrate cleaning tank 2 is opened, and the pressure in the substrate cleaning tank 2 is returned to the normal pressure to end the cleaning process. According to the second embodiment of the cleaning method, after the end of the rinsing process, 120275.doc -20-200811941 can be used between the high pressure maintained in the substrate cleaning tank 2 and the atmospheric pressure caused by opening the back pressure valves 13 and 14. The differential pressure cleans residual additives 22A and 23 A. Therefore, when the rinsing treatment is completed, when the pressure in the substrate cleaning tank 2 is returned to the normal pressure, residual additives can be prevented from entering the substrate cleaning tank 2. According to this first embodiment, the number of cleaning processes is reduced because the additive conduits 4 and 5 can be cleaned during the rinsing process. According to this second embodiment, the cost is lowered because the additive pipes 4 and 5 can be cleaned after the supply of the supercritical fluid C 〇 21 is stopped, which prevents waste of a large amount of supercritical fluid c 〇 2 . Further, the pressure in the substrate cleaning tank 2 is maintained at a high pressure to maintain the supercritical state, and the second embodiment uses the fact that the inside of the substrate cleaning tank 2 is maintained at a high pressure. Therefore, the characteristics of supercritical cleaning can be sufficiently utilized in the second embodiment. As described above, the supercritical clean method and the supercritical chamber according to the embodiments further prevent the additives in the supercritical fluid remaining in the end pipe from being liquefied in the pressure reducing stage after the clean wafer, and Prevent it from rushing into the substrate clean bath to wet the wafer and damage the fine structure. Therefore, the supercritical fluid substrate cleaning can be sufficiently performed in which a supercritical fluid is used to prevent the fine structure from being damaged by liquid contact, such as a pattern collapse occurring during the removal of the resist mask. Further, according to the supercritical substrate cleaning apparatus of this embodiment, even if another additive is added from the same pipe in the next wafer process, the additives can be prevented from being mixed, and the treatment can be performed according to the purpose. According to the above embodiment, the pressure is adjusted using a back pressure valve capable of controlling the pressure, however, the additives can be cleaned when the pressure in the on/off valve control device can be used. 120275.doc • 21· 200811941 In addition, according to the above embodiment, two additive piping systems are provided, however, by similarly setting the back pressure valve and opening/closing 龆~human closing/closing 阙, the system is increased according to the number of additives used. The number is possible. It should be noted that the above-described embodiments can be used as a supercritical fluid including an additive (chemical) dissolved in an organic solvent (e.g., methanol) to clean the wafer. Subsequently, a rinsing treatment using an organic solvent (e.g., methanol) and a rinsing treatment using only a supercritical fluid may be performed in the subsequent rinsing treatment. The cleaning method according to an embodiment of the present invention is applied to a clean semiconductor substrate. It should be understood that the present invention is not limited to the embodiments, and that the cleaning method according to an embodiment of the present invention can be applied to clean other articles such as a clean light mask and a liquid crystal display substrate. Those skilled in the art should understand that there are various modifications, combinations, sub-combinations and changes in the visual design requirements and other factors as long as they are within the scope of the accompanying application patent or its equivalent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a portion of a supercritical substrate cleaning apparatus adjacent to a substrate cleaning bath according to the related art; FIGS. 2A to 2D are diagrams showing the use of a supercritical substrate cleaning apparatus according to the related art. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a schematic view showing a portion of a supercritical fluid substrate cleaning apparatus adjacent to a substrate cleaning bath according to an embodiment of the present invention. FIGS. 4A to 4E are diagrams showing a first aspect of the present invention. A schematic process diagram of a supercritical substrate cleaning method of an embodiment; and FIGS. 5A to 5B are schematic process diagrams showing a supercritical 120275.doc -22-200811941 substrate cleaning method according to a second embodiment of the present invention. [Main component symbol description]
1 超臨界潔淨設備 2 處理腔室、基板潔淨池 3 主管道 4 添加劑管道 5 添加劑管道 6 排放管道 7 開/關閥 8 第一開/關閥 9 第一開/關閥 10 背壓閥 11 分支管道 12 分支管道 13 背壓閥 14 背壓閥 15 第二開/關閥 16 第二開/關閥 21 超臨界co2 22 第一添加劑 22A 殘餘添加劑 23 第二添加劑 23A 殘餘添加劑 40 超臨界潔淨設備 120275.doc -23- 200811941 41 基板潔淨池、 處理腔室 42 主管道 43 排放管道 44 添加劑管道 45 添加劑管道 46 超臨界C02供應閥、開/關閥 47 背壓閥 48 添加劑供應閥 、開/關閥 49 添加劑供應閥 、開/關閥 51 超臨界C〇2 52 添加劑 52A 殘餘添加劑 53 添加劑 53A 殘餘添加劑 120275.doc -24-1 Supercritical clean equipment 2 Processing chamber, substrate cleaning tank 3 Main piping 4 Additive piping 5 Additive piping 6 Discharge piping 7 Open/close valve 8 First open/close valve 9 First open/close valve 10 Back pressure valve 11 Branch Pipe 12 Branch pipe 13 Back pressure valve 14 Back pressure valve 15 Second open/close valve 16 Second open/close valve 21 Supercritical co2 22 First additive 22A Residual additive 23 Second additive 23A Residual additive 40 Supercritical clean equipment 120275 .doc -23- 200811941 41 Substrate cleansing tank, processing chamber 42 Main piping 43 Discharge piping 44 Additive piping 45 Additive piping 46 Supercritical C02 supply valve, on/off valve 47 Back pressure valve 48 Additive supply valve, on/off valve 49 additive supply valve, on/off valve 51 supercritical C〇2 52 additive 52A residual additive 53 additive 53A residual additive 120275.doc -24-
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006189553A JP2008021673A (en) | 2006-07-10 | 2006-07-10 | Cleaning method and cleaning apparatus |
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|---|---|
| TW200811941A true TW200811941A (en) | 2008-03-01 |
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| TW096124348A TW200811941A (en) | 2006-07-10 | 2007-07-04 | Cleaning method and cleaning apparatus |
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|---|---|
| US (1) | US20080006291A1 (en) |
| JP (1) | JP2008021673A (en) |
| CN (1) | CN101195118A (en) |
| TW (1) | TW200811941A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI658919B (en) * | 2018-03-22 | 2019-05-11 | 國立中山大學 | Bonding method for materials and method for separating the materials |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8956463B2 (en) * | 2008-10-08 | 2015-02-17 | Shin-Etsu Chemical Co., Ltd. | Method for cleaning photomask-related substrate, cleaning method, and cleaning fluid supplying apparatus |
| JP6006923B2 (en) * | 2010-09-30 | 2016-10-12 | Ｋｉｓｃｏ株式会社 | Drying apparatus and drying method for ultrafine structure |
| CN103676469A (en) * | 2012-09-26 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning photomask and method for disassembling photomask protection film component |
| US20160167978A1 (en) | 2013-08-08 | 2016-06-16 | Ocean Team Group A/S | A permanent magnetic material |
| KR20180006716A (en) * | 2016-07-11 | 2018-01-19 | 세메스 주식회사 | Apparatus and method fdr treating substrates |
| CN106269707A (en) * | 2016-09-07 | 2017-01-04 | 京东方科技集团股份有限公司 | The clean method of a kind of mask plate and cleaning device |
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| US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
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2006
- 2006-07-10 JP JP2006189553A patent/JP2008021673A/en active Pending
-
2007
- 2007-06-27 US US11/823,159 patent/US20080006291A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI658919B (en) * | 2018-03-22 | 2019-05-11 | 國立中山大學 | Bonding method for materials and method for separating the materials |
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| Publication number | Publication date |
|---|---|
| US20080006291A1 (en) | 2008-01-10 |
| CN101195118A (en) | 2008-06-11 |
| JP2008021673A (en) | 2008-01-31 |
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