200811940 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種基板洗淨裝置，更詳而言之係關於 一種提升生産性之基板洗淨裝置。 、 【先前技#ί】200811940 IX. Description of the Invention: [Technical Field] The present invention relates to a substrate cleaning apparatus, and more particularly to a substrate cleaning apparatus for improving productivity. , [previous technique #ί]
一抑作為半導體記憶體元件之基板所使用的晶圓、液晶顯 示為、或作為電漿顯示器面板所使用的平板基板等，妙 過=成薄膜與金屬膜等之各種製程而作為記憶體元件或'^ 不态7G件加以製造。如上所述之各製程係在提供盥*、 離之環境的製程腔室（chamber)進行。亦即，在^程腔^ j可進行製造記憶體元件或顯示器元件之塗佈製程、暾 :顯影製程、蝕刻製程、洗淨製程、剝離（如p)J'製 洗淨製程係在處理各種化學藥品（藥液）等 ^及附在ELD、LCD、PDP & FPD表面之汚祕質的事 染物質的去除係可藉由供應水或洗淨液，且使用^ 等去除吸附在基板表面的汚染物質的製程來進行。 1係概略顯示習知技術之基板洗淨裝置的圖示， 2概略顯示習知技術之基板洗淨裝置之—部分的圖示。 躱1及圖2，基板洗淨裝置係包含喷射喷嘴⑽、 市液供給部120及氣體供給部13〇。 、、商4^，11G係混合氣體及藥液轉成霧滴，且將霧 於在ίΪΡ上。藥液供給部12G係對喷射喷嘴110供 、、口市’文:軋體供給部130係對喷射喷嘴11〇供給氣體。 徂仏樂液在加熱部140加熱’經由藥液供給線15〇而 二喷嘴110供給並混 市的乳體，而形成霧滴（mist)o如上所 5 200811940 形成的霧滴係供給至基板p上，以將基板p表面洗淨。 為了供給高溫藥液，而在加熱部140加熱藥液，但此 時為了加熱液體的藥液而耗費大量的能量，而且，耗費許 多的時間。亦即，由於為了加熱藥液而耗費大量能量且耗 費許多時間，而使生產性降低。 200811940 【發明内容】 (發明所欲解決之課題） 本發明的目的在提供一種提升生產性之基板洗淨裝 置。 一本發明並非限制於前述之目的，未提及之其他目的亦 可藉由下述而由熟習該項技術者明確理解。 (解決課題之手段） 壯為了解決丽述課題之本發明之一實施形態的基板洗淨 含：混合氣體及藥液而形捕滴，且將前述霧滴 嘴，在，板p上之-伽㈣；將供給至前述喷射喷 供，1;、將氣體供給至前述倾噴嘴之-氣體 度上&的錢體供給部相連結❿使料氣體的溫 (發明之效果） 所述實施形態之基板洗淨裝置，具有如下 霧滴以且在短時㈣^ 之洗藉由形成高溫霧滴而將基板洗淨，可提高基板 7 200811940 【實施方式】 纽，實施雜之·事項係包含於詳細説明及 中。 參考所附圖示及於後詳述之實施形態，以使本發明之 巧點及特徵以及用以達成該等優點及特徵的方法更加明 確。但是，本發明並非限定於以下所揭示的實施形態，可 =不同且各式各樣的形態加以實現，本實施形態僅為使本 务明之揭示更為完整，且為了使本發明所屬技術領域中具 有通常知識者完全理解發明範圍而提供者，本發明係僅g • 由申請專利範圍的範圍所定義。在整個說明書中，相同^ 件符號係表示相同之構成要素。 此外，本說明書中，「及/或」係包含所提及之項目 (item)之各個項目及1個以上之所有組合。 本說明書中所使用的用語係用以說明實施形態者，並 非用以限制本發明者。本說明書中，單數形若未以說明特 別提及，則亦包含複數形。此外，說明書中所使用的「包 括（comprises)及/或包含（comprising)」係可在所提及 之構成要素、階段、動作及/或元件中可追加1個以上之 φ 其他構成要素、階段、動作及/或元件。 以下芩照圖3及圖4，更進一步詳加說明本發明之— 實施形態的基板洗淨裝置。 圖3係概略顯示本發明之一實施形態之基板洗淨裝置 的圖示，圖4係概略顯示本發明之一實施形態之基板^淨 裝置之一部分的圖示。 苓照圖3及圖4，本發明之一實施形態之基板洗淨裝 置係包含：噴射喷嘴210、藥液供給部220、氣體供給部 230及加熱部240。 贺射赁嘴210係混合氣體及藥液而形成霧滴，且將霧 200811940 ίΐΐί基板。喷射喷嘴2ig係可包含.]錄氣體之 乳體供給口；供給藥液之藥液供給口 1田、體之 形成之霧滴的喷射口。 U ，及用以贺射在内部 ，液供給部22G係將藥液供給至嘴射21〇The wafer used for the substrate of the semiconductor memory device, the liquid crystal display, or the flat substrate used for the plasma display panel, etc., can be used as a memory element or a process such as a film or a metal film. '^ Not 7G parts are manufactured. Each of the processes described above is carried out in a process chamber providing an environment of 盥*. That is, in the process chamber, the coating process for manufacturing the memory device or the display device, the development process, the etching process, the cleaning process, and the stripping (eg, p) J's cleaning process can be performed in various processes. The removal of chemical substances (chemical liquids), etc., and the staining substances attached to the surface of ELD, LCD, PDP & FPD can be carried out by supplying water or a cleaning solution, and removing the adsorption on the surface of the substrate by using The process of polluting substances is carried out. 1 is a schematic view showing a substrate cleaning apparatus of a conventional technique, and 2 is a schematic view showing a part of a substrate cleaning apparatus of a conventional technique. In FIG. 1 and FIG. 2, the substrate cleaning apparatus includes an injection nozzle (10), a municipal liquid supply unit 120, and a gas supply unit 13A. ,, 4^, 11G mixed gas and liquid turned into droplets, and will fog on the ΪΡ. The chemical solution supply unit 12G supplies the injection nozzle 110, and the product supply unit 130 supplies the gas to the injection nozzle 11A. The eucalyptus liquid is heated by the heating unit 140 to the milk which is supplied and mixed by the two nozzles 110 via the chemical supply line 15 ,, and the mist is formed as described above. The mist droplets formed as described above in 200811940 are supplied to the substrate p. Upper to wash the surface of the substrate p. In order to supply the high-temperature chemical liquid, the chemical liquid is heated in the heating unit 140. However, in order to heat the liquid chemical liquid, a large amount of energy is consumed, and it takes a lot of time. That is, since a large amount of energy is consumed for heating the chemical liquid and it takes a lot of time, the productivity is lowered. [Invention] The object of the present invention is to provide a substrate cleaning apparatus which improves productivity. The invention is not limited to the foregoing purposes, and other objects not mentioned may be clearly understood by those skilled in the art from the following. (Means for Solving the Problem) In order to solve the problem of the present invention, the substrate cleaning method includes: mixing a gas and a chemical liquid to form a droplet, and the mist nozzle is on the plate p-ga (4); supplying the jet to the jet, 1; supplying the gas to the gas supply unit of the tilting nozzle and connecting the temperature of the gas to the nozzle (effect of the invention) The substrate cleaning apparatus has the following mist droplets and washes the substrate by forming a high-temperature mist droplet in a short period of time (4), and the substrate 7 can be improved. [Embodiment] The problem is included in the details. Description and medium. The embodiments of the present invention, as well as the methods and features of the present invention, will become more apparent. However, the present invention is not limited to the embodiments disclosed below, and can be implemented in various forms and in various forms, and the present embodiment is only to make the disclosure of the present invention more complete, and in order to make the present invention The present invention is provided by a person having ordinary knowledge who fully understands the scope of the invention, and the present invention is only defined by the scope of the patent application. Throughout the specification, the same reference numerals denote the same constituent elements. In addition, in the present specification, "and/or" includes each item of the item mentioned and all combinations of one or more. The terms used in the specification are used to describe the embodiments and are not intended to limit the inventors. In the present specification, the singular forms include plural forms unless otherwise specified. In addition, "comprises" and/or "comprising" as used in the specification may add one or more φ other constituent elements and stages to the constituent elements, stages, actions, and/or components mentioned. , actions and / or components. Hereinafter, a substrate cleaning apparatus according to an embodiment of the present invention will be further described in detail with reference to Figs. 3 and 4 . Fig. 3 is a view schematically showing a substrate cleaning apparatus according to an embodiment of the present invention, and Fig. 4 is a view schematically showing a part of a substrate cleaning apparatus according to an embodiment of the present invention. Referring to Fig. 3 and Fig. 4, a substrate cleaning apparatus according to an embodiment of the present invention includes an injection nozzle 210, a chemical supply unit 220, a gas supply unit 230, and a heating unit 240. The Hefei nozzle 210 is a mixture of gas and liquid to form a droplet, and the mist is 200811940 ίΐΐί substrate. The injection nozzle 2ig may include a milk supply port for recording a gas, and an injection port for a droplet formed by the liquid supply port of the chemical solution. U, and for the inside shot, the liquid supply unit 22G supplies the liquid to the mouth 21〇
Wf泵相連結而以高麗將藥液供給至喷射^嘴210 I 時樂液可為例如純水（DI)。 主貝射贺為210。此 ^體供給部230係將氣體供給至前 但此時所供給的氣體可為 :=于二鳥2 〇，When the Wf pump is connected to supply the liquid medicine to the spray nozzle 210 I in Korea, the liquid liquid may be, for example, pure water (DI). The main shell shot is 210. The body supply unit 230 supplies the gas to the front but the gas supplied at this time can be: = 2 birds 2 〇,
=高溫氣體。例如可一面使氣體供 ==二 Π : 2將氣體加ΐ至高溫。此外，供給至^噴ί 度係$祕秘給。此時所供給之氣體溫 260力^控制、&而形成之霧滴的溫度而以控制部 在此，以加熱部240之發熱手段而言，例如可直接利 =將電流流通至電阻線等所產生職耳熱（；Gule heat), ^可以可見光線或紅外線產生熱而加以利用。或者，亦可 =用藉由放電所產生的電弧熱，或者利用高頻之電磁氣 =。亦可一面將由氣體供給部230所供給的氣體壓縮 棱，一面使溫度上昇。 以下參圖3及圖4，說明本發明之一實施形態之基 板洗淨裝置的洗淨製程。 、 ^ ^ ^在製程腔室内裝載基板P，以準備進行洗淨製程。接 著，由藥液供給部220及氣體供給部230將藥液及氣體供 给至噴射噴嘴210。此時供給至喷射噴嘴21〇之藥液及氣 體的流重係可由控制部260加以控制。此外，藥液係可^呈 由高壓泵而以高壓供給，氣體亦可壓縮成高壓而供給。 另一方面’氣體係以加熱部240加熱至高溫而供給， 在加熱部240中係可直接利用將電流流通至電阻線等而產 9 200811940 生之焦耳熱，或者亦可以可見光線或紅外線產生埶。戋者， =利用藉由放電所產生的m熱，或者高頻之電磁 ίϊ。另一方面，亦可一面將由氣體供給部230所供給的 氣體壓縮成高壓，一面使溫度上昇。 b若鬲溫的氣體及藥液供給至喷射噴嘴210，在喷射喷 嘴21〇中係混合高溫氣體及藥液而形成霧滴，且喷射在美 上。此時在噴射噴嘴210中係可將霧滴調整為所希i ，士^。在喷射噴嘴210中’混合高溫氣體與藥液所形成 之務滴的溫度係具有高於常溫的溫度。 由貝射喷嘴210所供給之高溫霧滴會碰觸基板p，基 反〃表面則措由務滴的打擊力而予以物理性洗淨。此時由 於常溫的溫度’因此實現高於供給常 溫霧滴 4根據本發明之一實施形態的基板洗淨裝置，供給常溫 ，液與高溫氣體而形成高溫霧滴。此時由於將氣體加哉2 供給，因此耗費比將藥液加熱至高溫而供給者車交少 二ί i此外，用以加熱氣體所耗#時間係比將藥液加埶 ίίΓ:間少。因此’可以更少的能量、使用較少的時間 t成;溫霧滴。藉此方式，可降低成本而使生產性提升。 由形成高溫霧滴而將基板p洗淨，相較於使用常 /皿務滴者，可提高基板p之洗淨力。 二參照所附圖示說明本發明之實施形態，但本發 Μ 4支術領域中具有通常知識者係可理解在未改變本在 思想或所需特徵的情形下，可藉由其 ： ==:Ξ此，必須瞭解前述之實施形態係在各方面ΐ 。兄均為例不者，而非用以限定者。 200811940 【圖式簡單說明】 圖1係概略顯示習知技術之基板洗淨裝置的圖示。 圖2係概略顯示習知技術之基板洗淨裝置之一部分的 圖示。 圖3係概略顯示本發明之一實施形態之基板洗淨裝置 的圖示。 圖4係概略顯示本發明之一實施形態之基板洗淨裝置 之一部分的圖示。= high temperature gas. For example, the gas can be supplied to ==2 Π : 2 to raise the gas to a high temperature. In addition, the supply to the ^ ί degree is secret. In this case, the temperature of the gas supplied by the gas is controlled by 260, and the temperature of the mist formed is controlled by the control unit. For example, in the heating means of the heating unit 240, for example, the current can be directly flowed to the electric resistance wire or the like. The generated Gule heat (Gule heat) can be utilized by generating heat from visible light or infrared rays. Alternatively, you can use the arc heat generated by the discharge or use the high frequency electromagnetic gas =. It is also possible to increase the temperature while compressing the gas supplied from the gas supply unit 230. Referring to Fig. 3 and Fig. 4, a cleaning process of the substrate cleaning apparatus according to an embodiment of the present invention will be described. , ^ ^ ^ Loading the substrate P in the process chamber to prepare for the cleaning process. Then, the chemical liquid supply unit 220 and the gas supply unit 230 supply the chemical liquid and the gas to the injection nozzle 210. At this time, the flow rate of the chemical liquid and the gas supplied to the injection nozzle 21A can be controlled by the control unit 260. Further, the chemical liquid can be supplied by a high pressure pump at a high pressure, and the gas can be compressed to a high pressure and supplied. On the other hand, the gas system is heated by the heating unit 240 to a high temperature, and the heating unit 240 can directly generate Joule heat generated by flowing a current to a resistance wire or the like, or can be generated by visible light or infrared rays. . The best, = use the m heat generated by the discharge, or the high frequency electromagnetic ϊ. On the other hand, the temperature of the gas supplied from the gas supply unit 230 can be increased while being compressed to a high pressure. b If the warm gas and the chemical liquid are supplied to the spray nozzle 210, the high temperature gas and the chemical liquid are mixed in the spray nozzle 21 to form a mist, and the spray is formed in the United States. At this time, in the spray nozzle 210, the mist can be adjusted to the desired value. In the spray nozzle 210, the temperature of the droplet formed by mixing the high-temperature gas and the chemical liquid has a temperature higher than normal temperature. The high-temperature mist supplied from the jet nozzle 210 touches the substrate p, and the surface of the base is physically washed by the striking force of the droplet. At this time, the temperature is higher than the normal temperature. Therefore, the substrate cleaning apparatus according to an embodiment of the present invention is supplied, and the normal temperature, the liquid and the high temperature gas are supplied to form the high temperature mist. At this time, since the gas is supplied to the crucible 2, it is more expensive than heating the liquid to a high temperature, and the supplier pays less. In addition, the time taken to heat the gas is less than the amount of the chemical solution. Therefore, 'can be less energy, use less time t; warm mist drops. In this way, the cost can be reduced and the productivity can be improved. The substrate p is washed by the formation of a high-temperature mist droplet, and the cleaning power of the substrate p can be improved as compared with the case of using a conventional dish. 2, the embodiments of the present invention are described with reference to the accompanying drawings, but those of ordinary skill in the art of the present invention can understand that, without changing the present thought or desired features, it can be: In this regard, it must be understood that the foregoing embodiments are in all respects. Brothers are not examples, not limited. 200811940 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a conventional substrate cleaning apparatus. Fig. 2 is a view schematically showing a part of a substrate cleaning apparatus of the prior art. Fig. 3 is a view schematically showing a substrate cleaning apparatus according to an embodiment of the present invention. Fig. 4 is a view schematically showing a part of a substrate cleaning apparatus according to an embodiment of the present invention.
【主要元件符號說明】 P 基板 110 喷射喷嘴 120 藥液供給部 130 氣體供給部 140 加熱部 150 藥液供給線 210 喷射喷嘴 220 藥液供給部 230 氣體供給部 240 加熱部 250 氣體供給線 260 控制部 11[Description of main components] P substrate 110 injection nozzle 120 chemical supply unit 130 gas supply unit 140 heating unit 150 chemical supply line 210 injection nozzle 220 chemical supply unit 230 gas supply unit 240 heating unit 250 gas supply line 260 control unit 11