200810301 九、發明說明 【發明所屬之技術領域】 本發明是關於加工裝置，該加工裝置使用適合於半導 體晶圓上之半導體裝置之電路構成零件等之加工之雷射振 盪裝置，得到即使變化脈衝重複頻率亦可以取得安定之高 輸出Q開關脈衝之裝置及方法，並且，實現即使任意照 射時序亦可以取得經常安定化之輸出的微細加工裝置及方 法。 【先前技術】 在電子工業中，對於微細化之電路零件之調整、修 正、加工等，於該領域所知的有如照射自固體雷射所取得 之Q開關脈衝輸出，使用於除去、標記、修整、劃線等 之製造工程。在該雷射加工方法中，是以即使重複每雷射 脈衝之輸出能量、波形，對於頻率之變化亦經常取得特定 輸出爲佳。例如，用以切換半導體記憶體之冗長電路之不 良救濟用的電路保險絲切斷等，是以一面高速掃描不等間 隔之切斷點，一面將聚光雷射光束照射至電路之保險絲而 切斷保險絲部。該是藉由隨著高速振盪指令朝切斷點照射 安定脈衝波形、能量，求出高精度處理高積體度之記憶體 單元；°對該些加工對象物照射雷射脈衝之時間間隔不均勻 之情形爲多’故有用以將雷射振盪器所發射出之脈衝能 量、脈衝寬、峰値輸出予以均等化的技術。對此之先前技 術是如第1圖所示般，提案有藉由組合脈衝雷射振盪裝置 -5- 200810301 和音響光源元件（AOM)所產生之脈衝安定化方法。 第1圖爲使AOM在每脈衝動作之脈衝安定化方法， 使用藉由Α Ο Μ除去於Q開關脈衝振盪後所產生之低輸出 脈衝之方法。該有使用高價格ΑΟΜ裝置之缺點。於下述 說明。自半導體雷射等之激勵用之光源1所發射之雷射光 朝向固體雷射媒體5之雷射振盪激勵用聚光部1 0發射。 該之間存在相對於構成透鏡等之聚光光學系3和固體雷射 共振器之雷射波長成爲高反射，相對於激勵光成爲透過性 之高反射鏡4。雷射共振器之另一方之輸出鏡7是被設置 在與雷射媒體5之高反射鏡4相反側上，在雷射媒體5和 輸出鏡7之間設置有由音響光學性之開關元件所構成之Q 開關元件6。動作訊號自雷射裝置之控制部1 1使激勵光 源驅動部8、Q開關驅動部、被設置在與雷射共振器之外 部的ΑΟΜ29之ΑΟΜ驅動部12發生訊號。ΑΟΜ施加RF 功率至超音波變換器而生成布拉格折射（Bragg diffraction) 單元，使通過光束折射。因此，當自驅動部12施加RF 至單元時，光束之一部份則在RF施加時點藉由折射分 離。將RF功率音波傳播至AOM之折射單元而通過折射 格子之雷射脈衝藉由放大器1 5被瞄準而進入反射鏡1 6， 反射而朝向加工對象物20，在透鏡1 8聚光而聚光照射至 加工對象物20之表面，執行加工。加工對象物20是藉由 驅動台23執行精密定位之驅動。驅動在已知之技術是藉 由自控制部11經由控制訊號線26而執行。 在如此之構成中，雷射振盪是以第2圖所示之程序執 -6- 200810301 行。事先發出來自半導體雷射之激勵用雷射光束2’雷射 媒體被放置在事先激勵狀態。在此’當脈衝觸發在（a)之 tl、t3、t5、…時點發出時，RF1之功率則自驅動部9被 施加至Q開關元件，增加在雷射振盪之高反射鏡4和輸 出鏡7之間的雷射振盪之往返光路之損失，形成抑制振盪 之狀態。該狀態在時間tl-t2、t3-t4、t5-t6、…之時間持 續，於該期間將激勵能量蓄積於雷射媒體5。該蓄積量是 與激勵光之強度及tl-t2、t3-t4、t5-t6、…之時間大略成 比例。在t2、t4、t6以驅動部9隔斷對開關6供給RF功 率。依此，在雷射共振器激烈發生Q開關脈衝，透過輸 出鏡7取得（c)之輸出光束30MIR。接著，因雷射媒體放 置在激勵狀態，故雷射媒體恢復雷射振盪增益，存在於 RF功率不被施加至Q開關元件6之狀態，故連續性低輸 出之振盪部份則如第2圖之（c )之1 3 S I R所示持續振盪。 因此，雷射輸出光路30IR含有Q開關脈衝部份30MIR和 連續輸出部份13SIR。 因在雷射共振器之外部光束光路設置有Α Ο Μ 2 9，故 將自驅動部1 2施加R F功率至該a Ο Μ 2 9之時序，如第2 圖（d)所示般，於Q開關脈衝30MIR結束後配合連續盪振 邰份1 3 S IR之振盪時序。連續性振盪部份丨3 s〗r因在 AOM29折射’故與Q開關脈衝3〇MIR*離如第1圖所示 般取得另外方向之光束13SIR。連續性雷射振盪部份14 表示此。與Q開關脈衝部份3 〇 ΜIR分離而連續性之雷射 部份13SIR是不朝向加工對象物。因此，僅q開關脈衝 200810301 3 0MIR照射至加工對象物20，有助於加工。 在如此之以往構成中，必須於振盪器之外部設置 AOM29，與脈衝振盪同步而控制動作時序。具有AOM29 所產生之損失，使用具有功率損失之AOM29則有導致增 加裝置成本，必須設置場所等之缺點。並且，A0M2 9是 當雷射光束波長變化時，必須使設置角度、光學端面之反 射防止膜之變更的必要性發生等之設置條件再次予以最佳 化。 並且，在重複脈衝振盪輸出中，因迴避第1號脈衝與 後續之脈衝輸出不同之現象，故於Q開關振盪之前，降 低激勵Nd : YAG雷射媒體之光源的激勵強度，如此之技 術揭示於美國專利第43 3 7442號說明書。揭示有爲了使脈 衝輸出成爲一定，持續如此的連續性激勵，因於Q開關 脈衝振盪之前於特定期間停止振盪動作，故以Q開關隔 斷振盪，於蓄積Q開關脈衝用之能量後，使Q開關予以 振盪之方法，於事先Q開關振盪之前使來自激勵光源之 激勵強度下降之方法等，調整雷射振盪之上能級位準之分 佈數之方法。 [專利文獻1]美國專利第43 3 7442號說明書 [專利文獻2]美國專利第5 0 1 8 1 52號說明書 [專利文獻3]美國專利第529 1 5 05號說明書 [專利文獻4]美國專利第5 3 3 93 2 3號說明書 [專利文獻5]美國專利第5 8 1 25 69號說明書 [專利文獻6]美國專利第5982790號說明書 200810301 [專利文獻7 ]美國專利第6 0 3 8 2 4 1號說明書 [專利文獻8]美國專利第64 1 8 1 54號說明書 [專利文獻9 ]美國專利第6 0 0 9 1 1 0號說明書 [專利文獻10]美國專利第6683 893號說明書 [專利文獻Π]美國專利第693 1 03 5號說明書 [專利文獻12]美國專利第6 1 723 25號說明書 [專利文獻1 3 ]美國專利第5 7 1 9 3 7 2號說明書 [專利文獻14]美國專利第44 1 23 3 0號說明書 [專利文獻1 5 ]特表2 0 0 2 - 5 1 8 8 3 4號公報 【發明內容】 [發明所欲解決之課題] 本案發明所欲解決之課題是重複Q開關脈衝之輸出 的均等化。即是，提供即使脈衝重複之時間間隔變化亦可 以取得不依存於此的安定化Q開關脈衝雷射振盪輸出之 雷射脈衝產生裝置及方法，並且提供使用於此之雷射加工 裝置及方法。 [用以解決課題之手段] 本發明爲了解決上述課題’本發明之雷射派衝產生裝 置’其徵爲·具備·雷射媒體，雷射共振器；藉由控制 上述雷射共振器之Q値成爲雷射振盪控制之Q開關元 件；上述雷射媒體之退激源；和使上述退激源在第一特定 時間動作，自雷射媒體發射蓄積能量的手段；藉由在第二 -9- 200810301 特定時間對上述Q開關元件施加雷射振盪抑制訊號，使 特定能量蓄積於上述雷射媒體之手段；和爲了取得Q開 關雷射脈衝振盪，停止對上述Q開關元件施加雷射振盪 抑制訊號的手段。 再者，具有上述雷射媒體之激勵源，於使上述蓄積能 量發射之手段又具備有降低上述激勵源之激勵強度或是停 止或者隔斷激勵的手段。再者，使上述能量蓄積之手段又 具備有將上述雷射振盪抑制訊號之位準設定成不具有充分 振盪抑制止能之位準的手段。 接著，本發明之雷射派衝產生裝置，其特徵爲：具備 有雷射媒體；雷射共振器；藉由控制上述雷射共振器之Q 値成爲雷射振盪控制之Q開關元件；藉由將不具有充分 之振盪抑止能之位準之雷射振盪抑制訊號在特定時間施加 至上述Q開關元件，使特定能量蓄積於上述雷射媒體之 手段；和爲了取得Q開關雷射脈衝振盪輸出，停止對上述 Q開關元件施加雷射振盪抑制訊號的手段。 接著，本發明之雷射脈衝產生裝置，其特徵爲：具備 有雷射媒體；雷射共振器；藉由控制上述雷射共振器之Q 値成爲雷射振盪控制之Q開關元件；將調變後之激勵訊 號給予至上述媒體的手段；藉由施加雷射振盪抑制訊號而 在特定時間施加至上述Q開關元件，使特定之能量蓄積 於上述雷射媒體之手段；和爲了取得Q開關雷射脈衝振 盪，停止對上述Q開關元件施加雷射振盪抑制訊號的手 段。 -10- 200810301 接著，本發明之雷射派衝產生裝置，其特徵爲：具備 有雷射媒體；雷射共振器；藉由控制上述雷射共振器之Q 値成爲雷射振盪控制之Q開關元件；將施加雷射振盪抑 制訊號施加至上述Q開關元件，使能量蓄積至上述雷射 媒體之手段；和爲了在具有因應來自前次脈衝之產生間隔 的損失之狀態下，取得Q開關雷射脈衝振盪輸出，依存 於來自前次脈衝之產生間隔而調變雷射振盪抑制訊號之手 段。 並且，本發明是在Q開關雷射脈衝之光路又具備有 非線形光學元件。再者，本發明之雷射加工裝置，其特徵 爲將來自該些雷射脈衝產生裝置之脈衝輸出照射至加工對 象物，並且，加工對象物爲半導體基板上之連結配線、電 容器、電阻器、電感器等之裝置，或爲液晶顯示裝置、電 激發光顯示裝置、電漿顯示裝置等之顯示裝置。 另外，本發明之雷射脈衝產生方法，其特徵爲：具有 設置雷射媒體、雷射共振器、藉由控制雷射共振器之Q 値成爲雷射振盪抑制之Q開關元件和雷射媒體之退激源 的步驟；使退激源在第一特定時間動作，自雷射媒體發射 蓄積能量之步驟；藉由在第二特定時間對Q開關元件施 加雷射振盪抑制訊號，將特定能量蓄積於雷射媒體之步 驟；和藉由停止對Q開關元件施加雷射振盪抑制訊號， 取得Q開關雷射脈衝振盪輸出之步驟。 再者，在發射上述蓄積能量之步驟中，又降低對雷射 媒體之激勵強度或停止或者隔斷激勵。再者，在將特定能 -11 - 200810301 量蓄積於上述雷射媒體之步驟中，將雷射振盪抑制訊號之 位準設定成不具有充分振盪抑制止能之位準。再者，在放 射上述蓄積能量之步驟中，第一特定時間爲零以上。 接著，本發明之雷射脈衝產生方法，其特徵爲：具有 設置雷射媒體、雷射共振器、藉由控制雷射共振器之Q 値成爲雷射振盪抑制之Q開關元件的步驟；藉由在特定 時間將不具有充分振盪抑止能之訊號位準之雷射振盪抑制 訊號施加至Q開關元件，將特定能量蓄積於雷射媒體之 步驟；和藉由停止對 Q開關元件施加雷射振盪抑制訊 號，取得Q開關雷射脈衝振盪輸出之步驟。 接著，本發明之雷射脈衝產生方法，其特徵爲：具有 設置雷射媒體、雷射共振器、藉由控制雷射共振器之Q 値成爲雷射振盪抑制之Q開關元件的步驟；將調變後之 激勵訊號給予至上述雷射媒體之步驟；藉由在特定時間將 雷射振盪抑制訊號施加至Q開關元件，使特定之能量蓄 積至雷射媒體之步驟；和藉由停止對Q開關元件施加雷 射振盪抑制訊號，取得 Q開關雷射脈衝振盪輸出之步 驟。 接著，本發明之雷射脈衝產生方法，其特徵爲：具有 設置雷射媒體、雷射共振器、藉由控制雷射共振器之Q 値成爲雷射振盪抑制之Q開關元件的步驟；對Q開關元 件施加雷射振盪抑制訊號而將能量蓄積於雷射媒體之步 驟；和藉由依存於來自前次脈衝之產生間隔而調變雷射振 盪抑制訊號，在雷射共振器具有因應來自前次脈衝之產生 -12- 200810301 間隔的損失之狀態下，取得Q開關雷射脈衝振 步驟。 並且，本發明又具有將Q開關雷射脈衝變 波而予以輸出之步驟。再者，本發明之雷射加工 特徵爲具有將以該些之雷射脈衝產生方法所產生 衝照射至加工對象物之步驟。並且，加工對象物 基板上之連結配線、電容器、電阻器、電感器等 或是爲液晶顯示裝置、電激發光顯示裝置、電漿 等之顯示裝置。 [發明效果] 當藉由本發明之雷射脈衝產生裝置及方法時 衝重複之時間間隔變化亦可以取得不依存於此 開關脈衝。再者，若藉由本發明之雷射脈衝加工 法，則可以以任一時序均勻將雷射脈衝照射至加 在藉由雷射脈衝之物體加工中，於照射光束時， 置以不等間隔分布在基板上之情形，即使於此情 由本案發明，雖然因應加工位置而爲不均等之任 但是亦可以照射均勻之雷射脈衝。 再者，若藉由本案發明，即使無以往所需之 之外部的用以選擇光束連續振盪輸出和Q開關 輸出部之分歧元件，亦可以實現藉由安定之Q 脈衝所執行之加工。於自來自雷射振盪媒體之基 高諧波之時，則可以防止以退激光成分或高諧波 盪輸出之 換至高諧 方法，其 之雷射脈 爲半導體 之裝置， 顯示裝置 ，即使脈 的安定Q 裝置及方 工物體。 有加工位 形，若藉 意時序， AOM等 脈衝振盪 開關雷射 本波取得 元件所變 -13- 200810301 換之波長以外之波長光混入Q開關脈衝或是高諧波成 分。在雷射媒體採用導波路之核心周圍設置多孔之多孔光 纖（holey fiber)，降低由於形成在雷射媒體內之溫度分布 所產生之雷射媒體內溫度變化而導致折射率變動影響’亦 可以謀求提升雷射振盪模式之安定性。 【實施方式】 以下，參照第3圖至第1 0圖，針對本發明之較佳實 施例予以說明。 [實施例1] 以下，使用第3圖、第4圖詳細說明本發明之實施例 1。針對圖中之說明號碼’與先前技術說明之第1圖中所 使用之號碼相同之功能部份使用相同號碼。在此’輸出鏡 7，是設爲對於基本波具有高反射率’對於第2高諧波具有 高透過率之特性的輸出鏡。經由瞄準透鏡4 3使來自雷射 激勵光源之半導體雷射振盪器46之激勵用雷射光束成爲 平行光束，而引導至偏光重疊器44。另外，雷射上能級 激勵密度降低用之退激用雷射振盪器4 1 ’成爲對雷射媒 體照射雷射振盪目的波長外之雷射波長的退激源。以瞄準 透鏡42使來自退激用雷射振盪器4 1之雷射光束成爲平行 光束，引導至偏光光束重疊器44，將該兩條光束重疊或 時間錯開而在同軸上進行配置在同軸上之合成的光束 45，以聚光光學系統3使雷射共振器之基本波長通過高反 -14- 200810301 射鏡4而聚光照射於雷射媒體5上。在雷射共振器之輸出 鏡7 ’和Q開關元件之間設置非線形光學元件3 1。該構成 中，對雷射共振器4和輸出鏡7 ’之間的Q開關元件6以 來自控制部50之指令如第4圖（b)所示般控制RF功率之 開啓和關閉之時序。 在第3圖之例中，激勵用之半導體雷射振盪器46之 光雖然在空間上傳送，但是可以利用光纖傳送激勵用振盪 器之光，此時，將退激用光源光束結合於該光纖以同軸傳 送。 退激用雷射振盪器41、激勵用半導體雷射振盪器46 之振盪波長，是雷射媒體爲Nd 離子添加的Nd : YAG : Nd : YV04、Nd : YLF，之時，則從如第5圖所示之眾知 Nd之能量位準圖使用80 8nm附近之波長以當作激勵用波 長，退激用則以波長〇.9μιη、Ι.ίμιη、1·3μιη附近之雷射 光爲有效。該是因爲以雷射媒體所使用之Nd : YAG結晶 通常所使用波長之雷射遷移的上能級之4F3/2設爲起點的 其他遷移波長具有 946nm、1123nm、1319nm。說明該些 構成中，各元件和控部部之動作時序例。 爲了設定加工對象物2 0之加工設置，以來自控制部 5 0之訊號使驅動部2 1驅動驅動台23。該驅動台之控制位 置即使爲具有解碼器之閉環位置控制系統（無圖式）亦可。 在該階段，爲了搶先於第4圖之時刻11 ’驅動超音波施加 之Q開關元件6、激勵用半導體雷射振盪器46，故控制 第4圖（b)之RF1之施加時序而施加RF，啓動（c)之激勵功 -15- 200810301 率（PL)。Q開關元件6是自Q開關驅動部9將RF功率施 加至Q開關元件6之超音波變換器’使雷射共振器成爲 損失大之雷射振盪隔斷狀態。另外’對雷射媒體5施加激 勵用雷射輸出，因於成爲雷射振盪之前’使形成具有雷射 媒體內之熱性溫度分布之平衡狀態’故自控制部5 0經由 控制訊號線27而將振盪指令發送至激勵用半導體雷射振 盪器46。 預測加工對象物20之加工位置到達至所對應之聚光 透鏡1 8之聚光點的時間13而自控制部5 0發出雷射振盪 動作製程開始之指令訊號。首先，因施加用以降低至此所 激勵的上能級反轉分布密度之退激波長附近之雷射光，故 經由控制訊號線40將振盪指令發送至退激用雷射振盪器 41。振盪指令是藉由第4圖（a)所示之觸發訊號而射出， 藉由觸發訊號之下降邊緣如（d)所示般在時刻tl、t5、t9 中開始退激用雷射振盪。退激雷射光是利用瞄準透鏡42 被瞄準而成爲平行，進入至偏光光束重疊器44，通過而 利用聚光透鏡3被照射至雷射媒體5。在該雷射媒體5如 第4圖（e)虛線位準所示般蓄積有事先自激勵用半導體雷 射振盪器46藉由瞄準透鏡43而成爲平行，以藉由偏光光 束重疊器44成爲同軸之激勵雷射光束而被激勵產生結晶 溫度上昇’朝上能級激勵之能量。在此，因退激用之雷射 波長被照射至相问結晶空間，故以與雷射振擾之基本波長 不同之波長自上能級遷移至下位位準而發射光。該光由於 越不滿足成爲雷射共振器之充分振盪的條件，損失越大， -16- 200810301 故無到達雷射振盪。以第4圖（e) U L - 1所示般可以降低至 此所蓄積之上能級之能量位準之密度。 在特定時間tl-t2之期間執行退激，之後僅以退激雷 射在t2-t3之間激勵，執行用以在上能級發生反轉分布之 激勵（UL-2)。之後，如第4圖（b)所示般，在t3-t4間隔斷 朝Q開關元件6之驅動用RF功率，成爲透過（開）狀態， 使Q開關脈衝3 3 G振盪。在此，上能級之激勵密度隨著 雷射振盪降低（UL-3)。此時之Q開關脈衝輸出33G對應 於在時間t2-t3之間被蓄積於雷射媒體5之能量而放射脈 衝能量（f)Q〇之33G。於Q開關脈衝之振盪後，因自時刻 t4再次使Q開關成爲隔斷（閉）狀態，施加RF功率至Q開 關元件6。在該過程之時刻t3-t4之間振盪而發射之Q開 關脈衝，加工第1加工對象點。接著，第2加工對象物點 也相同，求出自位置和掃描速度所求出之Q開關振盪之 時序，在根據此之時間關係，在時間t5-t6之間持續退激 DPL1，之後，執行特定時間t6-t7之間雷射激勵，之後， 在時間t7-t8間隔斷RF使Q開關脈衝33G振盪。此時， 爲Q開關脈衝之間隔的時間t3-t7、t7-tl 1之時間變化 時，即是即使時間t4-t5、t8-t9之間的時間不同，因將退 激製程（d)之DPL1導入至Q開關重複動作之脈衝振盪循 環間，故自tl、t5、t9以前各被蓄積之上能級能量藉由退 激雷射而減少。（f)Q0所示之Q開關脈衝輸出33G之輸出 能量因已退激後之激勵能量被設定，故謀求與脈衝頻率無 關係之輸出均等化。因此，藉由使用該些均等化之脈衝輸 -17- 200810301 出，可以與雷射照射時序無關係精密執行加工對象物之加 工。第3號以後之Q開關動作爲相同製程之重複。 上述圖之實施例中如第4圖（〇所示般表示以低強度 使激勵用之雷射輸出P L予以動作之例，但是，即使以該 輸出成爲退激中或振盪停止或是低輸出狀態之方式，調變 激勵用雷射輸出PL而促進退激速度亦可。 在上述說明中，針對非線形光學元件3 1，於加工用 波長使用基本波之波長時不需要，但是於使用第2高諧波 時則將眾知之非線形光學元件相對於基本波之光束設置成 滿足相位整合條件。依此，Q開關脈衝變換至第2高諧波 而自輸出鏡7’發射。此時因應所需依據波長過濾器32除 去藉由混入至第2高諧波輸出之Q開關脈衝之基本波成 分或退激波長成分而被刺激所發射之 ASE成分（ASE = Amplified Spontaneous Emission 之簡稱，被放大之自然 放射光之意），將混入成分33 1R導入光束吸收體34，以 光束放大器1 5僅瞄準第2高諧波成分3 3 G，而由反射鏡 1 6反射之後，以聚光透鏡1 8形成微細之點，而照射至加 工對象物，可以施予加工。 爲了使非線形光學元件3 1產生非線形作用，必須使 輸入光偏光。於共振器內具有帶偏光之要素時，必須在另 外光路設置偏光器等之偏光手段。在此所示之偏光手段之 必要性在本案發明設置非線形光學元件之時，所有爲共 同。 於將該基本波長之第2高諧波成分藉由線形光學元件 -18- 200810301 予以波長變換並利用於加工之時，即使連續振盪成分混入 基本波亦可，因爲被波長變換之第2高諧波成分之大部份 僅取得高變換效率之Q開關元件之成分當作第2高諧波 被輸出之故。即使連續波成分不被波長變換，放發射於與 高諧波相同軸上，亦可藉由波長過濾器刪除高諧波以外。 因此，可以完全刪除連續成分。 藉由通過非線形光學元件3 1，可以大幅度緩和共振 器內之振盪抑制能對Q開關元件6之基本波成分之負 擔。該是自以往使用基本波時，因以使Q開關元件之驅 動功率不輸出連續輸出成分之方式，增大用以增大Q開 關元件之抑制能之Q開關元件驅動之RF功率，抑制連續 振盪，或於輸出連續成分之後，如先前技術所說明般，必 須以AOM來刪除之故。於前者時，因增大Q開關驅動部 9之RF電路之最大功率，故有多數產生藉由發熱產生信 賴性下降，隨著對高重複RF調變元件增大負荷而對最高 重複率限制，由於增大Q開關變換器之消耗電力使得於 與變換器之折射媒體的接合部產生剥離或發生超音波振動 用變換器之破裂等之不良現象。於後者之時，由於設置具 有分離Q開關脈衝成分和連續振盪成分之高折射率的 AOM，故AOM之變換器需要高RF功率驅動，產生如Q 開關元件6中與RF驅動器有關之設計性限制的缺點。 [實施例2] 實施例2爲在基本波振盪中連續輸出成分與Q開關 -19- 200810301 脈衝交互發生之例。使用第3圖之構成。第6圖是說明本 實施例之動作。事先產生激勵用半導體雷射振盪器46之 輸出，激勵雷射媒體5，以將該期間Q開關元件6之RF 功率，以重複脈衝速度，降低RF功率至可以抑制所需之 能量蓄積位準之程度，具有低折射能爲止之方式，將（b) 之RF 1設定成比較低之位準。因此，當進行激勵能量之 蓄積時，雷射勝過Q開關元件6之抑制而開始連續性振 盪，如（f)Q0所示般輸出連續性低輸出LP。接著，在 (d)DPL之tl-t2之間產生退激DPL1而予以退激，將被蓄 積之能量當作ASE而放射，如（e)UL-N之UL-1所示般消 耗上能級之能量。該期間，激勵用半導體雷射如（〇PL之 11 -t2間般振盪停止或隔斷。並且，退激用雷射之振盪指 令是與實施例1相同，藉由第6圖（a)所示之觸發訊號而 發出。 在t2-t3之間自激勵用半導體雷射再次照射激勵光而 激勵雷射媒體，蓄積所需之激勵位準能量（UL-2)。之後， 在t3停止施加Q開關元件6之RF施加，使引起Q開關 脈衝振盪，發射Q開關脈衝33G(UL-3)。接著，對Q開關 元件6施加RF 1功率而自激勵用半導體雷射振盪器46使 雷射媒體5激勵光，連續振盪成分L P振盪。之後，以需 要之時序t5-t6執行退激雷射照射，以激勵用半導體雷射 在特定時間（t6-t7)激勵，接著，執行振盪Q開關脈衝之重 複。即使在該循環中發生連續性輸出，非線形光學元件 3 1中之變換效率因與功率之平方成比例，故連續輸出之 -20- 200810301 變換效率，比起Q開關脈衝，由於壓倒性較低，故以基 本波原樣通過非線形光學元件3 1，利用波長過濾器3 2分 離，以光束吸收體3 4成爲熱而可以刪除。因此’對加工 對象物僅照射來自高諧波成分之Q開關脈衝之變換成 分，執行加工。 退激期間11 -12、t 5 -16及19 -11 0亦可能成爲零。於成 爲零時，因可以省略退激用雷射，故即使不是自第3圖與 退激用雷射發訊器4 1、控制訊號線40、瞄準透鏡42、偏 光光束重疊器44及雷射裝置控制部5 0中之退激用雷射振 盪器控制有關之功能亦可。 於對Q開關元件6施加RF功率時，將振盪設定成完 全無法抑制之位準，在抑制上能級之反轉分布數之狀態， 使用第6圖（g)UL’-N之時，尤其在第6圖（g)、（h)、（i)表 示使退激時間tl-t2、t5-t6、t9-tl0成爲0之時的動作。 此時，具有從低重複至高重複動作安定在任意間隔取得低 峰値Q開關之特徵。此時，以第6圖（g)表示上能級之能 量。相當於第6圖（f)之振盪輸出之時間經過成爲第6圖（h) 般。勝過因Q開關之抑制能所造成之損失而振盪連續洩 漏成分LP’，持續至Q開關脈衝振盪指令時序t3、t7、 11 1之前，在此，當RF功率關閉時，藉由RF功率施加所 抑制之殘存增益，取得低峰値Q開關脈衝（h)Q’之33G。 藉由將此以非線形光學元件予以波長變換成高諧波，取得 第2高諧波之Q開關輸出（i)QSHG之33G’。當藉由該方 法時，因至不發生洩漏振盪成分LP，的高重複率爲止以一 -21 - 200810301 定輸出取得Q開關脈衝3 3 G及第2高諧波輸出3 3 G ’。故 與脈衝重複率無關係，取得與脈衝間隔無關係之安定高諧 波Q開關脈衝。 [實施例3][Technical Field] The present invention relates to a processing apparatus which uses a laser oscillation device suitable for processing a circuit component or the like of a semiconductor device on a semiconductor wafer, and obtains a pulse repeat even if it is changed A device and method for obtaining a stable high-output Q-switch pulse at a frequency, and a micro-machining device and method capable of obtaining a constantly stabilized output even at an arbitrary irradiation timing. [Prior Art] In the electronics industry, for the adjustment, correction, processing, etc. of the miniaturized circuit components, it is known in the art that the Q-switch pulse output obtained from the solid laser is used for removal, marking, trimming. Manufacturing engineering such as scribing. In the laser processing method, it is preferable to obtain a specific output for a change in frequency even if the output energy and waveform of each laser pulse are repeated. For example, a circuit fuse for cutting a defective circuit for switching a semiconductor memory is cut off by a high-speed scanning of unequal intervals, and the concentrated laser beam is irradiated to a fuse of the circuit. Fuse section. By irradiating the stable pulse waveform and the energy to the cutting point with the high-speed oscillation command, the memory unit with high precision is obtained by high-precision processing; and the time interval at which the laser beam is irradiated to the processing object is uneven. In many cases, it is useful to equalize the pulse energy, pulse width, and peak chirp output emitted by the laser oscillator. The prior art for this is as shown in Fig. 1, and there is proposed a pulse stabilization method by combining a pulsed laser oscillation device -5 - 200810301 and an acoustic light source element (AOM). Fig. 1 is a method of pulse-stabilizing the AOM in each pulse operation, using a method of removing the low-output pulse generated by the oscillation of the Q-switch pulse by Α Μ 。. This has the disadvantage of using a high-priced device. As explained below. The laser light emitted from the light source 1 for excitation by a semiconductor laser or the like is emitted toward the laser oscillation excitation concentrating portion 10 of the solid laser medium 5. Between the condensing optical system 3 and the solid-state laser resonator constituting the lens, the high-reflection mirror 4 is highly reflective and highly transparent to the excitation light. The other output mirror 7 of the laser resonator is disposed on the opposite side of the high mirror 4 of the laser medium 5, and an acoustic optical switching element is disposed between the laser medium 5 and the output mirror 7. The Q switching element 6 is constructed. The operation signal from the control unit 1 of the laser device causes the excitation light source driving unit 8, the Q-switch driving unit, and the driving unit 12 provided in the outer portion of the laser resonator to generate a signal. ΑΟΜ RF power is applied to the ultrasonic transducer to generate a Bragg diffraction unit that refracts through the beam. Therefore, when RF is applied from the driving portion 12 to the unit, a portion of the light beam is separated by refraction at the time of RF application. The RF power sound wave is propagated to the refraction unit of the AOM, and the laser pulse passing through the refracting grid is aimed by the amplifier 15 and enters the mirror 16. The reflection is directed toward the object 20, and the lens is concentrated at the lens 18. Processing is performed on the surface of the object 20 to be processed. The object 20 is driven by the drive table 23 to perform precise positioning. The known technique of driving is performed by the control unit 11 via the control signal line 26. In such a configuration, the laser oscillation is performed in the procedure shown in Fig. 2 -6-200810301. The excitation laser beam 2' from the semiconductor laser is previously placed in a pre-excited state. Here, when the pulse is triggered at the point of (a) tl, t3, t5, ..., the power of RF1 is applied from the driving portion 9 to the Q switching element, and the high reflection mirror 4 and the output mirror are added in the laser oscillation. The loss of the round-trip optical path between the laser oscillations between 7 forms a state of suppressing oscillation. This state continues at times t1 - t2, t3 - t4, t5 - t6, ..., during which the excitation energy is accumulated in the laser medium 5. The amount of accumulation is approximately proportional to the intensity of the excitation light and the time of tl-t2, t3-t4, t5-t6, . The RF power is supplied to the switch 6 by the drive unit 9 at t2, t4, and t6. Accordingly, the Q-switch pulse is intensely generated in the laser resonator, and the output beam 30MIR of (c) is obtained through the output mirror 7. Then, since the laser medium is placed in the excited state, the laser medium restores the laser oscillation gain, and the RF power is not applied to the Q switching element 6, so the oscillation portion of the continuous low output is as shown in FIG. The oscillation of 1 3 SIR of (c) continues. Therefore, the laser output optical path 30IR includes a Q switch pulse portion 30MIR and a continuous output portion 13SIR. Since the external beam path of the laser resonator is provided with Α Μ Μ 2 9, the timing of applying RF power from the driving portion 12 to the a Ο Μ 2 9 is as shown in Fig. 2(d). After the end of the Q-switch pulse 30MIR, the oscillation timing of the 1 3 S IR is continuously matched. The continuous oscillation portion 丨3 s〗R is obtained by refraction at AOM29, and the Q-switch pulse 3〇MIR* is taken as the light beam 13SIR in the other direction as shown in Fig. 1. The continuous laser oscillating portion 14 indicates this. The laser portion 13SIR which is separated from the Q-switch pulse portion 3 〇 Μ IR is not oriented toward the object to be processed. Therefore, only the q-switch pulse 200810301 3 0MIR is irradiated to the object 20 to facilitate processing. In such a conventional configuration, the AOM 29 must be provided outside the oscillator to synchronize the pulse oscillation to control the operation timing. With the loss caused by AOM29, the use of AOM29 with power loss has the disadvantage of causing the cost of the device to be increased, and the location must be set. Further, in the case where the wavelength of the laser beam is changed, the setting condition of the installation angle and the necessity of changing the reflection preventing film of the optical end face must be optimized again. Moreover, in the repetitive pulse oscillation output, since the phenomenon that the first pulse is different from the subsequent pulse output is avoided, the excitation intensity of the light source that excites the Nd:YAG laser medium is lowered before the Q-switch oscillation, and thus the technique is disclosed in U.S. Patent No. 4,337,442. It is disclosed that in order to keep the pulse output constant, the continuous excitation is continued. Since the oscillation operation is stopped for a certain period of time before the Q-switch pulse oscillates, the Q-switch is used to block the oscillation, and after accumulating the energy for the Q-switch pulse, the Q-switch is made. The method of oscillating, the method of reducing the excitation intensity from the excitation light source before the Q-switching oscillation, and the method of adjusting the distribution level of the energy level level above the laser oscillation. [Patent Document 1] US Patent No. 43 3 7442 [Patent Document 2] US Patent No. 5 0 1 8 1 52 [Patent Document 3] US Patent No. 529 1 5 05 Specification [Patent Document 4] US Patent Japanese Patent No. 5 8 1 25 69 [Patent Document 6] US Patent No. 5982790 Specification 200810301 [Patent Document 7] US Patent No. 6 0 3 8 2 4 No. 1 specification [Patent Document 8] US Patent No. 64 1 8 1 54 [Patent Document 9] US Patent No. 6 0 0 1 1 0 No. [Patent Document 10] US Patent No. 6683 893 Specification [Patent Literature U.S. Patent No. 693 1 03 5 [Patent Document 12] US Patent No. 6 1 723 25 [Patent Document 13] US Patent No. 5 7 1 3 3 7 2 [Patent Document 14] US Patent [Patent Document 1 5] Special Table 2 0 0 2 - 5 1 8 8 3 4 [Invention] [Problems to be Solved by the Invention] The problem to be solved by the present invention is to repeat The output of the Q switching pulse is equalized. That is, a laser pulse generating apparatus and method for obtaining a stabilized Q-switched pulse laser oscillation output which does not depend on the change of the time interval of the pulse repetition, and a laser processing apparatus and method therefor are provided. [Means for Solving the Problems] In order to solve the above-described problems, the present invention provides a laser emission generation device of the present invention, which includes a laser medium and a laser resonator, and controls the Q of the laser resonator.値 becoming a Q-switching element for laser oscillation control; a source of de-excitation of the above-mentioned laser medium; and means for causing said de-excited source to operate at a first specific time to emit energy from a laser medium; - 200810301 means for applying a laser oscillation suppression signal to the Q switching element at a specific time to accumulate specific energy in the laser medium; and stopping the application of the laser oscillation suppression signal to the Q switching element in order to obtain the Q-switching laser pulse oscillation s method. Further, the excitation source having the above-described laser medium has means for reducing the excitation intensity of the excitation source or stopping or blocking the excitation. Further, the means for accumulating the energy is provided with means for setting the level of the laser oscillation suppression signal to a level that does not have sufficient oscillation suppression. Next, the laser pie generating device of the present invention is characterized in that: a laser medium is provided; a laser resonator; and a Q-switching element for controlling the laser oscillation by controlling Q 値 of the laser resonator; a means for applying a laser oscillation suppression signal having a sufficient level of oscillation suppression to the Q-switching element at a specific time to accumulate specific energy in the laser medium; and in order to obtain a Q-switched laser pulse oscillation output, The means for applying the laser oscillation suppression signal to the Q switching element is stopped. Next, the laser pulse generating device of the present invention is characterized in that: a laser medium is provided; a laser resonator; and a Q-switching element that controls the laser oscillation of the laser resonator to become a laser oscillation control; a means for applying a stimulus signal to the medium; applying a laser oscillation suppression signal to the Q-switching element at a specific time to accumulate specific energy in the laser medium; and obtaining a Q-switching laser Pulse oscillation stops the means of applying a laser oscillation suppression signal to the Q switching element. -10- 200810301 Next, the laser projection generating device of the present invention is characterized in that: a laser medium is provided; a laser resonator; and a Q switch which is controlled by the laser oscillation by controlling the Q 値 of the laser resonator a means for applying a laser oscillation suppression signal to the Q-switching element to accumulate energy to the laser medium; and for obtaining a Q-switched laser in a state having a loss corresponding to the interval from the previous pulse generation The pulse oscillation output depends on the means for modulating the laser oscillation suppression signal from the interval at which the previous pulse was generated. Further, the present invention is provided with a non-linear optical element in the optical path of the Q-switched laser pulse. Further, the laser processing apparatus according to the present invention is characterized in that the pulse output from the laser pulse generating means is irradiated onto the object to be processed, and the object to be processed is a connecting wiring, a capacitor, a resistor, and the like on the semiconductor substrate. A device such as an inductor or a display device such as a liquid crystal display device, an electroluminescence display device, or a plasma display device. In addition, the laser pulse generating method of the present invention is characterized in that it has a laser medium, a laser resonator, a Q-switching element for controlling laser oscillation by controlling the Q 値 of the laser resonator, and a laser medium. a step of de-energizing the source; causing the de-excited source to operate at a first specific time, and transmitting a stored energy from the laser medium; accumulating the specific energy by applying a laser oscillation suppression signal to the Q-switching element at a second specific time a step of laser media; and a step of obtaining a Q-switched laser pulse oscillation output by stopping applying a laser oscillation suppression signal to the Q switching element. Further, in the step of emitting the above accumulated energy, the excitation intensity to the laser medium is lowered or the excitation is stopped or blocked. Further, in the step of accumulating the specific energy -11 - 200810301 in the above-mentioned laser medium, the level of the laser oscillation suppression signal is set to a level which does not have sufficient oscillation suppression. Further, in the step of emitting the above-described accumulated energy, the first specific time is zero or more. Next, the laser pulse generating method of the present invention is characterized by the steps of: providing a laser medium, a laser resonator, and a Q-switching element for controlling laser oscillation suppression by controlling Q 値 of the laser resonator; Applying a laser oscillation suppression signal having no signal level of sufficient oscillation suppression to the Q switching element at a specific time, accumulating specific energy in the laser medium; and suppressing application of laser oscillation suppression to the Q switching element Signal, the step of obtaining the Q-switched laser pulse oscillation output. Next, the laser pulse generating method of the present invention is characterized in that: there is a step of setting a laser medium, a laser resonator, and a Q-switching element for controlling laser oscillation suppression by controlling Q 値 of the laser resonator; a step of applying a modified excitation signal to the laser medium; a step of applying a laser oscillation suppression signal to the Q switching element at a specific time to accumulate specific energy to the laser medium; and by stopping the Q switch The component applies a laser oscillation suppression signal to obtain a Q-switched laser pulse oscillation output. Next, the laser pulse generating method of the present invention is characterized in that: there is a step of providing a laser medium, a laser resonator, and a Q-switching element for controlling laser oscillation suppression by controlling Q 値 of the laser resonator; a step of applying a laser oscillation suppression signal to the laser element to accumulate energy in the laser medium; and modulating the laser oscillation suppression signal by depending on a generation interval from the previous pulse, the laser resonator having a response from the previous time Pulse generation -12- 200810301 In the state of the loss of the interval, the Q-switched laser pulse vibration step is obtained. Further, the present invention has a step of outputting a Q-switched laser pulse and outputting it. Further, the laser processing of the present invention is characterized in that it has a step of irradiating the object to be processed by the laser pulse generating method. Further, the connection wiring, the capacitor, the resistor, the inductor, and the like on the substrate to be processed are display devices such as a liquid crystal display device, an electroluminescence display device, and a plasma. [Effect of the Invention] When the laser pulse generating apparatus and method of the present invention change the time interval of the repetition of the time, it is possible to obtain a switching pulse that does not depend on the switching pulse. Furthermore, according to the laser pulse processing method of the present invention, the laser pulse can be uniformly irradiated to the object applied by the laser pulse at any timing, and the illuminating beam is unequally spaced. In the case of the substrate, even if it is the invention of the present invention, it is possible to irradiate a uniform laser pulse even though it is not uniform depending on the processing position. Furthermore, according to the present invention, the processing performed by the stabilized Q pulse can be realized even without the externally required external components for selecting the continuous oscillation output of the light beam and the Q-switch output portion. At the time of the high harmonics from the laser oscillating medium, it is possible to prevent the switching of the laser component or the high harmonic output to the high harmonic method, and the laser pulse is a semiconductor device, the display device, even the pulse Settling Q devices and square objects. There is a machining position. If the timing is used, the AOM and other pulse-oscillation switches are laser-induced. The wave is mixed with the Q-switch pulse or the high-harmonic component. It is also possible to provide a porous fiber in the laser medium around the core of the waveguide to reduce the influence of the refractive index fluctuation caused by the temperature change in the laser medium generated by the temperature distribution in the laser medium. Improve the stability of the laser oscillation mode. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to Figs. 3 to 10. [Embodiment 1] Hereinafter, Embodiment 1 of the present invention will be described in detail using Figs. 3 and 4 . The same number is used for the functional part in which the description number in the figure is the same as the number used in the first figure of the prior art. Here, the output mirror 7 is an output mirror having a high transmittance for the fundamental wave and a high transmittance for the second harmonic. The excitation laser beam from the semiconductor laser oscillator 46 of the laser excitation source is made into a parallel beam via the aiming lens 43 and guided to the polarization stacker 44. Further, the de-excitation laser oscillator 4 1 ' for the laser upper-level excitation density reduction is a source of de-excitation of the laser wavelength outside the wavelength of the laser medium for the laser oscillation. The laser beam from the demagnetizing laser oscillator 41 is made into a parallel beam by the aiming lens 42 and guided to the polarization beam superimposer 44. The two beams are overlapped or time-shifted and arranged coaxially on the coaxial line. The combined beam 45 is focused by the collecting optics 3 so that the fundamental wavelength of the laser resonator is concentrated on the laser medium 5 through the high anti--14-200810301 lens 4. A non-linear optical element 31 is disposed between the output mirror 7' of the laser resonator and the Q switching element. In this configuration, the Q switching element 6 between the laser resonator 4 and the output mirror 7' controls the timing of turning on and off the RF power as shown in Fig. 4(b) with an instruction from the control unit 50. In the example of FIG. 3, although the light of the semiconductor laser oscillator 46 for excitation is transmitted in space, the light of the excitation oscillator can be transmitted by the optical fiber, and at this time, the light source beam for de-excitation is coupled to the optical fiber. Transmitted coaxially. The oscillation wavelengths of the excitation laser oscillator 41 and the excitation semiconductor laser oscillator 46 are Nd : YAG : Nd : YV04 and Nd : YLF added to the Nd ion by the laser medium, and the The energy level map of the known Nd shown in the figure uses a wavelength near 80 8 nm as the excitation wavelength, and the debounce is effective for the laser light in the vicinity of the wavelengths 9.9 μιη, Ι.ίμιη, and 1·3 μιη. This is because the other migration wavelengths of 4F3/2, which is the starting point of the upper level of the laser migration of the wavelength used for the Nd:YAG crystal used in the laser medium, are 946 nm, 1123 nm, and 1319 nm. In the above configuration, an example of the operation timing of each element and the control unit will be described. In order to set the machining setting of the object 20, the drive unit 21 is driven by the drive unit 21 by a signal from the control unit 50. The control position of the drive station can be even a closed loop position control system with a decoder (no picture). At this stage, in order to preempt the Q-switching element 6 and the excitation semiconductor laser oscillator 46 applied to the ultrasonic wave at the time 11' of FIG. 4, RF is applied by controlling the application timing of the RF1 of FIG. 4(b). Start (c) incentive work -15- 200810301 rate (PL). The Q-switching element 6 is an ultrasonic transducer that applies RF power from the Q-switch driving unit 9 to the Q-switching element 6 to cause the laser resonator to be in a state of high loss laser oscillation. In addition, 'the laser output for excitation is applied to the laser medium 5, because the balance state of the thermal temperature distribution in the laser medium is formed before the laser oscillation is formed, so the control unit 50 will control the signal line 27 via the control signal line 27. The oscillation command is sent to the excitation semiconductor laser oscillator 46. The command signal for starting the laser oscillation operation process is issued from the control unit 50 by predicting the time 13 at which the processing position of the object 20 reaches the condensing point of the corresponding condensing lens 18. First, since the laser light in the vicinity of the de-excitation wavelength for lowering the upper-level inversion distribution density excited thereby is applied, the oscillation command is transmitted to the de-excitation laser oscillator 41 via the control signal line 40. The oscillation command is emitted by the trigger signal shown in FIG. 4(a), and the detonation laser oscillation is started at times t1, t5, and t9 by the falling edge of the trigger signal as shown in (d). The de-excited laser light is aimed by the aiming lens 42 and becomes parallel, enters the polarized beam splitter 44, and is irradiated to the laser medium 5 by the collecting lens 3. In the laser medium 5, as shown by the dotted line level in FIG. 4(e), the pre-excitation semiconductor laser oscillator 46 is parallelized by the aiming lens 43 so as to be coaxial by the polarized beam superimposer 44. The excitation of the laser beam is excited to produce an increase in the crystallization temperature of the energy of the upward energy level. Here, since the laser wavelength for demagnetization is irradiated to the phase crystallization space, light is emitted from the upper level to the lower level at a wavelength different from the fundamental wavelength of the laser vibration. Since the light does not satisfy the condition of becoming a sufficient oscillation of the laser resonator, the loss is larger, and the laser oscillation is not reached until -16-200810301. The density of the energy level above the accumulated energy level can be reduced as shown in Fig. 4(e) U L -1. The de-excitation is performed during a specific time t1 - t2, and then only the de-excitation laser is excited between t2-t3, and an excitation (UL-2) for inverting the distribution at the upper level is performed. Then, as shown in Fig. 4(b), the driving RF power for the Q-switching element 6 is interrupted at t3-t4 to be in a transmissive (on) state, and the Q-switching pulse 3 3 G is oscillated. Here, the excitation density of the upper level decreases with the laser oscillation (UL-3). At this time, the Q-switch pulse output 33G corresponds to the energy accumulated in the laser medium 5 between time t2-t3 and radiates the pulse energy (f) Q 〇 33G. After the oscillation of the Q-switch pulse, the Q switch is again turned off (closed) from time t4, and RF power is applied to the Q switching element 6. The Q-switching pulse that oscillates between the times t3 and t4 at the time of the process processes the first processing target point. Then, the second object to be processed is also the same, and the timing of the Q-switch oscillation obtained from the position and the scanning speed is obtained, and DPL1 is continuously de-energized between times t5 and t6 according to the time relationship, and then executed. The laser excitation is performed between specific times t6-t7, and thereafter, the RF is turned off at time t7-t8 to oscillate the Q-switch pulse 33G. At this time, when the time t3-t7 and t7-tl 1 of the interval of the Q-switch pulse are changed, even if the time between the times t4-t5 and t8-t9 is different, the de-excitation process (d) is used. DPL1 is introduced into the pulse oscillation cycle of the Q-switch repeat operation, so the energy level of each of the accumulated upper levels from tl, t5, and t9 is reduced by the de-excitation laser. (f) The output energy of the Q-switch pulse output 33G shown in Q0 is set by the excitation energy after the de-excitation, so that the output that has no relationship with the pulse frequency is equalized. Therefore, by using the equalization pulse output, it is possible to precisely perform processing of the object to be processed irrespective of the laser irradiation timing. The Q switch action after the 3rd is a repetition of the same process. In the embodiment of the above-described figure, as shown in Fig. 4 (shown as 〇, the laser output PL for excitation is operated with low intensity. However, even if the output is de-excited or the oscillation is stopped or the output is low, In the above description, the excitation laser output PL is modulated to promote the de-excitation speed. In the above description, the non-linear optical element 31 is not required to use the wavelength of the fundamental wave for the processing wavelength, but the second highest is used. In the case of harmonics, the well-known non-linear optical element is set to satisfy the phase integration condition with respect to the fundamental wave beam. Accordingly, the Q-switch pulse is converted to the second high harmonic and is emitted from the output mirror 7'. The wavelength filter 32 removes the ASE component emitted by the stimulus by the fundamental wave component or the depolarization wavelength component of the Q-switch pulse mixed in the second harmonic output (ASE = Amplified Spontaneous Emission, amplified natural radiation) In the light, the mixed component 33 1R is introduced into the beam absorber 34, and the beam amplifier 15 is aimed only at the second harmonic component 3 3 G, and is reflected by the mirror 16 to collect light. The mirror 18 is formed into a fine point, and is irradiated to the object to be processed, and can be processed. In order to cause the nonlinear optical element 31 to have a nonlinear effect, the input light must be polarized. When the polarizing element is included in the resonator, it must be Further, the optical path is provided with a polarizing means such as a polarizer. The necessity of the polarizing means shown here is the same when the non-linear optical element is provided in the present invention. The second harmonic component of the fundamental wavelength is linearly optical. Element-18- 200810301 When the wavelength is converted and used for processing, even if the continuous oscillation component is mixed with the fundamental wave, the Q-switch component of the second harmonic component that is wavelength-converted only achieves high conversion efficiency. The component is output as the second harmonic. Even if the continuous wave component is not wavelength-converted, it is emitted on the same axis as the high harmonic, and the wavelength filter can be used to remove the high harmonics. Therefore, it can be completely The continuous component is deleted. By passing through the nonlinear optical element 31 1, the fundamental wave of the oscillation suppression energy in the resonator to the Q switching element 6 can be greatly alleviated. In the case where the fundamental wave is used in the past, the RF power driven by the Q-switching element for increasing the suppression energy of the Q-switching element is increased in such a manner that the driving power of the Q-switching element does not output a continuous output component. The continuous oscillation is suppressed, or after the continuous component is output, as described in the prior art, it must be deleted by the AOM. In the former case, since the maximum power of the RF circuit of the Q-switch driving unit 9 is increased, most of them are generated. The reliability is lowered by heat generation, and the maximum repetition rate is limited as the load is increased for the high-repetition RF modulation element, and the power consumption of the Q-switch converter is increased to cause peeling at the joint portion with the refractive medium of the inverter. Or a problem such as cracking of the transducer for ultrasonic vibration occurs. In the latter case, since the AOM having a high refractive index separating the Q-switch pulse component and the continuous oscillation component is provided, the AOM converter requires high RF power driving, resulting in design limitations related to the RF driver such as the Q switching element 6. Shortcomings. [Embodiment 2] Embodiment 2 is an example in which a continuous output component and a Q-switch -19-200810301 pulse interaction occur in fundamental wave oscillation. Use the composition of Figure 3. Fig. 6 is a view for explaining the operation of this embodiment. The output of the excitation semiconductor laser oscillator 46 is generated in advance, and the laser medium 5 is excited to reduce the RF power of the Q switching element 6 during the period to reduce the RF power to a level at which the required energy accumulation level can be suppressed. To the extent that there is low refractive energy, RF 1 of (b) is set to a lower level. Therefore, when the excitation energy is accumulated, the laser starts to continuously oscillate over the suppression of the Q switching element 6, and outputs the continuous low output LP as shown in (f) Q0. Then, (d) DPL1 is generated between the tl-t2 of DPL and de-excited, and the accumulated energy is radiated as ASE, as shown in (e) UL-N UL-1. Level of energy. During this period, the semiconductor laser for excitation is stopped or blocked as in the case of 〇PL 11 -t2, and the oscillation command of the laser for de-excitation is the same as that of the first embodiment, as shown in Fig. 6(a). The trigger signal is emitted. The self-excited semiconductor laser re-illuminates the excitation light between t2-t3 to excite the laser medium to accumulate the required excitation level energy (UL-2). Thereafter, the Q switch is stopped at t3. The RF application of element 6 causes the Q switch pulse to oscillate, transmitting Q switch pulse 33G (UL-3). Next, RF 1 power is applied to Q switch element 6 and laser medium 5 is self-excited by semiconductor laser oscillator 46. Excitation light, continuous oscillation component LP oscillation. Thereafter, de-excitation laser irradiation is performed at a required timing t5-t6 to excite the excitation semiconductor laser at a specific time (t6-t7), and then, repetition of the oscillation Q-switch pulse is performed. Even if a continuous output occurs in the cycle, the conversion efficiency in the nonlinear optical element 31 is proportional to the square of the power, so the continuous output -20-200810301 conversion efficiency is lower than the Q-switch pulse due to the overwhelming Basic wave The non-linear optical element 31 is separated by the wavelength filter 32, and the beam absorber 34 is heated and can be removed. Therefore, only the conversion component of the Q-switch pulse from the harmonic component is irradiated to the object to be processed, and the process is performed. Processing. 11 -12, t 5 -16 and 19 -11 0 during the de-excitation period may also become zero. When it becomes zero, the laser for de-excitation can be omitted, so even if it is not from the 3rd diagram and the laser for de-excitation The functions of the transmitter 4 1 , the control signal line 40 , the aiming lens 42 , the polarization beam superimposer 44 , and the laser oscillator control in the laser device control unit 50 may also be related to the Q switching element 6 . When RF power is applied, the oscillation is set to a level that cannot be suppressed at all, and when the number of inversions of the upper level is suppressed, the state of UL'-N in Fig. 6(g) is used, especially in Fig. 6 (g). (h) and (i) indicate the operation when the de-excitation time t1 - t2, t5 - t6, and t9 - t10 are 0. At this time, there is a low peak at any interval from low repetition to high repetition operation. The characteristic of the Q switch. At this time, the energy of the upper level is represented by Fig. 6 (g). It is equivalent to Fig. 6 (f The time of the oscillation output is as shown in Fig. 6(h). The continuous leakage component LP' is oscillated due to the loss due to the suppression energy of the Q switch, and continues to the timing of the Q-switch pulse oscillation command t3, t7, 11 1 Herein, when the RF power is turned off, 33G of the low-peak 値Q switching pulse (h)Q' is obtained by the residual gain suppressed by the RF power application. By converting the wavelength into a high-polar optical element Harmonic, the Q-switch output of the second harmonic is obtained (i) 33G' of QSHG. When this method is used, the high repetition rate of the leakage oscillation component LP does not occur, and the output is -21 - 200810301. The Q switch pulse 3 3 G and the second harmonic output 3 3 G ' are obtained. Therefore, it has nothing to do with the pulse repetition rate, and obtains a stable high-harmonic Q-switching pulse which has no relationship with the pulse interval. [Example 3]
實施例3是不使用退激用雷射振盪器而使用非線形光 學元件之例。第7圖表示構成。雖然省略與第1圖相同之 說明。但是，在第7圖中，附加有非線形光學元件3 1， 再者，使用對基本波具有高反射率，對第2高諧波具有高 透過率之特性之輸出鏡7 ’。第8圖表示如此之情形的動 作。（a)是表示激勵雷射功率。在此，並非連續波，而設 成被調變者。（b)爲觸發訊號。觸發訊號之間隔ti-t2、t2-t3、t3-t4即使不一定亦可。藉由觸發訊號（此時上昇邊緣） 進入，如（c)所示般，在Q開關元件6施加振盪抑制訊號 RF 1。依此，因在雷射媒體蓄積能量，使RF 1施加時間成 爲一定，故觸發訊號之間隔即使不一定，蓄積於雷射媒體 之能量被一定化。藉由完成施加RF1，如（d)所示般，雖 然發生Q開關脈衝，但因蓄積能量爲一定，故可以取得 能量被一定化之Q開關脈衝。該脈衝如此藉由非線形光 學元件3 1被高諧波變換，而如（e)所示般成爲Q開關脈衝 3 3 G ’雖然被照射至加工物體2 0，但是被照射之各脈衝之 能量保持一定。如此一來，本實施例中因對應於觸發訊 號，RF於一定時間被施加至Q開關元件6，故朝雷射媒 體5之能量蓄積時間成爲一定，故具有可以取得均勻Q -22- 200810301 開關脈衝之效果。再者，因雷射結晶內^ 定，故可以將光束特性保持一定。 本實施例中，藉由激勵雷射功率之調 Q開關脈衝3 3 G之間發生連續波之情形。 非線性光學元件之非線性，因原本功率弱 高諧波之變換效率非常低，故自非線形光 的僅爲基本波成分。基本波因藉由波長 離，故不被照射至加工物體20。 [實施例4] 實施例4是藉由在共振器具有損失 開關脈衝，使該能量成爲一定者。爲與！ 成，將此時之動作表示於第9圖。如第 使激勵雷射功率連續動作。再者，如第 因Q開關元件6使能量蓄積於雷射媒體 制用之RF訊號。如第9圖（b)所示般， t2、t2-t3、t3-t4、t4_t5 爲任意。對於在 所發生之觸發，藉由觸發脈衝之輸入（第 邊緣），設爲使振盪抑制用RF訊號之強度 變 DRF1、DRF2、DRF3等者。此時，該 與前次觸發之間隔（例如，對於DRF4及 3-t4及t4-t5)，並且調變成觸發間隔越長 強度之減少量。當輸入至Q開關元件6 = 變弱時，則如（d)所示般，共振器之Q値 產生熱量成爲一 變方法，則有在 如上述般，藉由 之連續波變換至 學元件3 1發出 過濾器32而分 之狀態下產生Q 爲7圖相同之構 9圖（a)所示般， 9圖（c )所示般， :，故施加振盪抑 觸發之間隔11 -如此任意之時序 9圖之時爲下降 施加一定時間調 調變量是依存於 DRF5各一存於 越簡小RF訊號 1 RF訊號之強度 上昇。依此，放 -23- 200810301 出蓄積於雷射媒體5內之能量，如（e)所示般，產生Q開 關脈衝3 0G。但是，於產生脈衝時，則與經常RF訊號成 爲零之其他實施例不同，當RF訊號弱但非零時，Q値不 充分上昇。因此，當RF訊號弱但非零時，則在雷射共振 器內存在有某程度損失之狀態下振盪。此時，所產生之Q 開關脈衝之能量因由雷射媒體中之蓄積能量和共振器內之 Q値來決定，故前者大時，若縮小後者加以控制，則可以 使產生脈衝之能量成爲一定。即是，自前次觸發之間隔長 時，因雷射媒體5內之蓄積能量大，故當縮小RF訊號之 調變度，使共振器之 Q値縮小，增大損失而產生脈衝 時，則能夠產生具有一定能量之Q開關脈衝。 爲了產生一定能量之Q開關脈衝，作成表示因應觸 發之時間間隔之RF訊號之調變量的表，藉由附加於第7 圖中之雷射控制裝置5 0，則可實施上述之方法。自觸發 脈衝之間隔，藉由參照表讀取所需之調變量，若利用雷射 裝置5 0之控制供給特定RF調變量至Q開關元件6即 可。 並且，由於改變供給至對應於觸發時間間隔之Q元 件的RF調變量之設定値，非如本實施例所示般成爲一定 之能量，亦可於每脈衝供給任意之能量。 本實施例中，除產生一定Q開關脈衝之能量外，因 僅有輸出雷射時提升Q値，故具有可以最大限利用激勵 功率，能量利用效率高之效果。 弟10圖是針封第2局諧波（SFG)共振器之構成’表不 -24- 200810301 與第3圖及第7圖所示之構成爲不同之例。於該圖中，如 第7圖之構成般，雖然無退激用雷射振盪器41，但是針 對第1 〇圖之第2高諧波共振器之構成，則如第3圖所示 般，當然亦可適用於具有退激用雷射振盪器41之構成。 使用非線形光學兀件31之點是與第3圖或第7圖共同。 並且，具有對基本波和第2高諧波具有全反射特性之終端 鏡4’。本構成是具有藉由基本波往返非線形光學元件 3 1，提高變換效率之優點。 於以上之實施例中，可知能夠使用眾知之波長變換技 術，即藉由非線形光學元件使自基本波所變換之波長成爲 第2高諧波之外，亦成爲第3高諧波、第4高諧波或是第 5高諧波。 本發明是與以往所揭示之藉由基本波波長之輸出中的 連續振盪輸出和Q開關振盪之混入的雷射振盪方法不 同，可以利用基本波至高諧波所變換之輸出僅使Q開關 脈衝振盪，可以使各Q開關脈衝輸出與脈衝重複週期無 關係地予以均等化。因此，具有可以實現不需要連續振盪 輸出之除去裝置之構成。再者，藉由變換至高諧波，即使 連續成分混在基本波，亦可以在變換效率之差異和波長過 濾器作用僅使用Q開關脈衝。即使於使用基本波之時， 使用高諧波輸出之時中之任一者時，因以掃描加工對象物 之時的相對性高速掃描，僅照射藉由Q開關所產生之短 脈衝，故由於不引起連續成分所產生之照射，故也不產生 熱性影響。亦可以因降低在高重複動作域動作之Q開關 -25- 200810301 驅動部之RF電路輸出功率而簡化電路。 並且，雖然表示於雷射媒體通過高反射鏡而在同軸激 勵之構成，但是雷射媒體之激勵亦可以使用雷射二極體激 勵、燈激勵等來當作除此之外的眾知之側面激勵，變形該 發明而加以實施。 雖然以Nd添加之結晶說明雷射媒體，但是亦可以藉 由使用具有在軸方向核心周圍設置多數孔而將中心部設爲 導波路之一種雷射活性物質之光導波路（多孔光纖）而成爲 雷射媒體，降低因形成在雷射媒體內之溫度分布使雷射媒 體內之溫度變化，而造成折射率變動之影響，又可以提升 雷射振盪模式之安定性。 以上說明幾個本發明之實施例。可知只要在不脫離申 請專利範圍所記載之發明的技術性思想，亦可以實施變形 例。 [產業上之利用可行性] 作爲本發明之活用例，是可以適用於切斷半導體記憶 體之矽晶圓的電路元件、電容器、電阻器、電感器等之調 整、LCD顯示面板修正加工、PDP顯示裝置之修正加工、 電路基板之功能調整，其他半導體基板之雷***密加工， 藉由使加工寬微小化、減少加工除去物等，提升製品良 率，依此能夠降低電子零件之製造成本。 【圖式簡單說明】 -26- 200810301 第1圖是執行藉由與該發明有關之以往例的雷射光束 照射所產生之加工方法的裝置說明圖。 第2圖爲第1圖之以往裝置構成之動作說明圖。 第3圖爲實施例1及2之裝置構成圖。 第4圖爲實施例1之裝置的動作說明圖。 第5圖爲本發明之原理說明用之雷射媒體之離子能量 位準圖，表示Nd : YAG結晶內之Nd離子能量位準。 第6圖爲實施例2之動作說明圖。 第7圖爲實施例3及4之裝置構成圖。 第8圖爲實施例3之動作說明圖。 第9圖爲實施例4之動作說明圖。 第1 〇圖爲針對第2高諧波之共振器之構成的例。 【主要元件符號說明】 1 :激勵用半導體雷射光源 2 :激勵用雷射光束 3 :聚光光學系統 4 :雷射共振器用高反射鏡 4 ’ ：終端鏡 5 :固體雷射用雷射媒體 6 : Q開關元件 7 :雷射共振器用輸出鏡 7 ’ ：輸出鏡 8 :激勵光源驅動部 -27- 200810301 9 : Q開關驅動部 1 〇 :雷射振盪激勵用聚光部 1 1 :雷射裝置控制部 1 2 : Α Ο Μ驅動部 1 4 :連續性雷射振盪部份 1 5 :光束放大器 1 6 :反射鏡 1 8 :加工用聚光透鏡 1 9 : Q開關脈衝雷射振盪部份 20 :加工對象物 21 :驅動台驅動部 26、27、40 :控制訊號線 2 3 :驅動台 29 :音響光學元件（ΑΟΜ) 3 1 :非線形光學元件 3 2 :波長過濾器 3 4 :光束吸收體 4 1 :退激用雷射振盪器 42、43 :瞄準透鏡 44:偏光光束重疊器 45 :合成光束 46 :激勵用半導體雷射振盪器 5 0 :雷射裝置控制部 -28-Embodiment 3 is an example in which a non-linear optical element is used without using a de-excitation laser oscillator. Figure 7 shows the composition. The same explanation as in Fig. 1 is omitted. However, in Fig. 7, a non-linear optical element 3 1 is added, and an output mirror 7' having a high reflectance for a fundamental wave and a high transmittance for a second high harmonic is used. Figure 8 shows the action of this situation. (a) is the excitation laser power. Here, it is not a continuous wave but a modulated person. (b) is the trigger signal. The interval between the trigger signals ti-t2, t2-t3, and t3-t4 is not necessarily the same. By the trigger signal (in this case, the rising edge), as shown in (c), the oscillation suppression signal RF 1 is applied to the Q switching element 6. Accordingly, since the RF 1 application time is constant due to the accumulation of energy in the laser medium, the interval between the trigger signals is not constant, and the energy stored in the laser medium is constant. When RF1 is applied, as shown in (d), although the Q-switch pulse is generated, since the accumulated energy is constant, the Q-switch pulse whose energy is constant can be obtained. The pulse is thus harmonically converted by the nonlinear optical element 31, and the Q-switched pulse 3 3 G ' is irradiated to the processed object 20 as shown in (e), but the energy of each pulse being irradiated is maintained. for sure. In this way, in the embodiment, the RF is applied to the Q-switching element 6 for a certain period of time corresponding to the trigger signal, so that the energy accumulation time toward the laser medium 5 becomes constant, so that the uniform Q -22-200810301 switch can be obtained. The effect of the pulse. Furthermore, since the laser crystal is fixed, the beam characteristics can be kept constant. In this embodiment, a continuous wave occurs between the PWM switching pulses 3 3 G by exciting the laser power. The nonlinearity of nonlinear optical components is very low due to the weak power of the original high-frequency harmonics. Therefore, the fundamental wave component is only the non-linear light. The fundamental wave is not irradiated to the processed object 20 by the wavelength. [Embodiment 4] Embodiment 4 is such that the energy is made constant by having a loss switching pulse in the resonator. For and! In this case, the action at this time is shown in Fig. 9. For example, the excitation laser power is continuously operated. Further, as the Q-switching element 6 causes the energy to accumulate in the RF signal for the laser medium. As shown in Fig. 9(b), t2, t2-t3, t3-t4, and t4_t5 are arbitrary. For the trigger generated, the input of the trigger pulse (the first edge) is such that the intensity of the oscillation suppression RF signal is changed to DRF1, DRF2, DRF3, and the like. At this time, the interval from the previous trigger (for example, for DRF4 and 3-t4 and t4-t5), and the change to the trigger interval is longer. When the input to the Q-switching element 6 = becomes weak, as shown in (d), the heat generated by the Q 共振 of the resonator becomes a change method, and as described above, the continuous wave transform is performed to the learning element 3 1 The filter 32 is issued and the Q is generated in the same state as shown in Fig. 9 (a), as shown in Fig. 9 (c), so the interval between the oscillations is applied 11 - so arbitrary At the time of the timing diagram 9, a certain time modulation variable is applied for the decrease in the intensity of the RF signal of the smaller RF signal 1 depending on the DRF5. Accordingly, the energy accumulated in the laser medium 5 is released -23-200810301, and as shown in (e), the Q switch pulse 3 0G is generated. However, when a pulse is generated, unlike other embodiments where the regular RF signal is zero, Q値 does not rise sufficiently when the RF signal is weak but not zero. Therefore, when the RF signal is weak but not zero, it oscillates in a state where there is a certain loss in the laser resonator. At this time, the energy of the generated Q-switch pulse is determined by the accumulated energy in the laser medium and the Q値 in the resonator. Therefore, if the former is large, if the latter is controlled, the energy of generating the pulse can be made constant. That is, since the accumulated energy in the laser medium 5 is large since the interval of the previous trigger is long, when the modulation degree of the RF signal is reduced, the Q値 of the resonator is reduced, and the loss is increased to generate a pulse. A Q-switch pulse with a certain energy is generated. In order to generate a Q-switch pulse of a certain energy, a table indicating the modulation of the RF signal at the time interval of the trigger is created, and the above-described method can be implemented by being attached to the laser control device 50 in Fig. 7. The interval between the self-triggering pulses is read by the reference table, and the specific RF variable is supplied to the Q switching element 6 by the control of the laser device 50. Further, since the setting of the RF variable supplied to the Q element corresponding to the trigger time interval is changed, it is not a certain energy as shown in the present embodiment, and any energy can be supplied per pulse. In the present embodiment, in addition to the energy of generating a certain Q-switch pulse, since the Q 提升 is increased only when the laser is output, the excitation power can be utilized to the utmost, and the energy utilization efficiency is high. Figure 10 is a diagram in which the composition of the second harmonic (SFG) resonator is sealed. The case of -24-200810301 is different from the configuration shown in Figs. 3 and 7. In the figure, as in the configuration of Fig. 7, although the excitation laser oscillator 41 is not provided, the configuration of the second harmonic resonator of the first drawing is as shown in Fig. 3, Of course, it can also be applied to a configuration having a laser oscillator 41 for de-excitation. The point of using the non-linear optical element 31 is in common with Fig. 3 or Fig. 7. Further, it has a terminal mirror 4' having a total reflection characteristic for the fundamental wave and the second harmonic. This configuration has an advantage of improving the conversion efficiency by the fundamental wave to and from the nonlinear optical element 31. In the above embodiments, it is known that the known wavelength conversion technique can be used, that is, the wavelength converted from the fundamental wave becomes the second harmonic by the nonlinear optical element, and the third harmonic and the fourth highest are also obtained. Harmonic or the 5th harmonic. The present invention is different from the conventional laser oscillation method in which the continuous oscillation output and the Q-switch oscillation in the output of the fundamental wave wavelength are mixed, and the output of the fundamental wave to the high harmonic can be used to oscillate only the Q-switch pulse. The Q-switch pulse output can be equalized regardless of the pulse repetition period. Therefore, there is a configuration in which a removing device that does not require continuous oscillation output can be realized. Furthermore, by shifting to high harmonics, even if the continuous components are mixed in the fundamental wave, only the Q-switched pulse can be used in the difference in conversion efficiency and the wavelength filter action. Even when any of the high harmonic output is used when the fundamental wave is used, only the short pulse generated by the Q switch is irradiated due to the relative high-speed scanning at the time of scanning the object to be processed, It does not cause irradiation by continuous components, so it does not cause thermal effects. It is also possible to simplify the circuit by reducing the RF circuit output power of the Q-switch -25- 200810301 driver in the high-repetition action domain. Moreover, although the laser medium is represented by coaxial excitation by a high mirror, the excitation of the laser medium can also be used as a side excitation other than the laser diode excitation, lamp excitation, or the like. The invention was modified and implemented. Although the laser medium is described by the crystal added by Nd, it can be made into a light by using an optical waveguide (porous optical fiber) having a laser active material having a central portion as a waveguide in a plurality of holes around the core in the axial direction. The medium is used to reduce the temperature variation in the laser medium caused by the temperature distribution in the laser medium, which causes the influence of the refractive index fluctuation, and can improve the stability of the laser oscillation mode. Several embodiments of the invention have been described above. It is to be understood that modifications may be made without departing from the technical spirit of the invention described in the claims. [Industrial Applicability] As an example of use of the present invention, it is applicable to adjustment of circuit elements, capacitors, resistors, inductors, and the like of a wafer in which a semiconductor memory is cut, and LCD display panel correction processing, PDP The correction processing of the display device and the function adjustment of the circuit board, and the laser precision machining of the other semiconductor substrates can improve the manufacturing yield of the electronic component by increasing the processing width and reducing the processing loss. [Brief Description of the Drawings] -26- 200810301 Fig. 1 is an explanatory view of a device for performing a processing method of laser beam irradiation by a conventional example relating to the invention. Fig. 2 is an explanatory view showing the operation of the conventional device configuration of Fig. 1. Fig. 3 is a view showing the configuration of the devices of the first and second embodiments. Fig. 4 is a view showing the operation of the apparatus of the first embodiment. Figure 5 is a diagram showing the ion energy level of the laser medium used in the principle of the present invention, showing the Nd ion energy level in the Nd:YAG crystal. Fig. 6 is a view showing the operation of the second embodiment. Fig. 7 is a view showing the configuration of the devices of the third and fourth embodiments. Fig. 8 is a view for explaining the operation of the third embodiment. Fig. 9 is a view showing the operation of the fourth embodiment. The first diagram is an example of the configuration of the resonator of the second harmonic. [Description of main component symbols] 1 : Semiconductor laser light source for excitation 2 : Laser beam for excitation 3 : Concentrating optical system 4 : High reflection mirror for laser resonator 4 ' : Terminal mirror 5 : Laser medium for solid laser 6 : Q switching element 7 : Output mirror for laser resonator 7 ' : Output mirror 8 : Excitation light source drive unit -27 - 200810301 9 : Q switch drive unit 1 : Laser oscillation excitation concentrating unit 1 1 : Laser Device control unit 1 2 : Α Ο Μ drive unit 1 4 : continuous laser oscillating portion 1 5 : beam amplifier 1 6 : mirror 1 8 : processing concentrating lens 1 9 : Q-switch pulse laser oscillating portion 20 : object to be processed 21 : drive table drive unit 26 , 27 , 40 : control signal line 2 3 : drive stage 29 : acoustic optical element (ΑΟΜ) 3 1 : non-linear optical element 3 2 : wavelength filter 3 4 : beam absorption Body 4 1 : De-excitation laser oscillator 42 , 43 : aiming lens 44 : polarized beam overlapr 45 : combined beam 46 : excitation semiconductor laser oscillator 50 : laser device control unit -28-