TW200744153A - Method for forming contact hole - Google Patents

Method for forming contact hole

Info

Publication number
TW200744153A
TW200744153A TW095118211A TW95118211A TW200744153A TW 200744153 A TW200744153 A TW 200744153A TW 095118211 A TW095118211 A TW 095118211A TW 95118211 A TW95118211 A TW 95118211A TW 200744153 A TW200744153 A TW 200744153A
Authority
TW
Taiwan
Prior art keywords
opening
dielectric layer
contact hole
forming contact
layer
Prior art date
Application number
TW095118211A
Other languages
Chinese (zh)
Other versions
TWI301307B (en
Inventor
Ying-Chou Chi
Rong-Duo Wang
Ying-Tsung Tu
Chao-Huan Hsu
Original Assignee
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd
Priority to TW95118211A priority Critical patent/TWI301307B/en
Publication of TW200744153A publication Critical patent/TW200744153A/en
Application granted granted Critical
Publication of TWI301307B publication Critical patent/TWI301307B/en

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The present invention relates to a method for forming a contact opening. First, a substrate having at least a dielectric layer formed thereon is provided. Then, a photoresist layer having a first opening is formed on the dielectric layer. A plasma etching operation is performed to form a second opening in the dielectric layer, and the first opening is located above the second opening. The bottom part of the first opening has a diameter smaller than that of the top part of the second opening. Thereafter, the photoresist layer is removed from the dielectric layer. Accordingly, at least a portion of the exposed contact opening will not be oxidized to prevent an increase in the resistance between the conductive pattern and the conductive layer that fills in the contact opening.
TW95118211A 2006-05-23 2006-05-23 Method for forming contact hole TWI301307B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95118211A TWI301307B (en) 2006-05-23 2006-05-23 Method for forming contact hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95118211A TWI301307B (en) 2006-05-23 2006-05-23 Method for forming contact hole

Publications (2)

Publication Number Publication Date
TW200744153A true TW200744153A (en) 2007-12-01
TWI301307B TWI301307B (en) 2008-09-21

Family

ID=45070192

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95118211A TWI301307B (en) 2006-05-23 2006-05-23 Method for forming contact hole

Country Status (1)

Country Link
TW (1) TWI301307B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10243157B2 (en) 2013-09-25 2019-03-26 Toppan Printing Co., Ltd. Thin film transistor array and image display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10243157B2 (en) 2013-09-25 2019-03-26 Toppan Printing Co., Ltd. Thin film transistor array and image display device
TWI655678B (en) * 2013-09-25 2019-04-01 日商凸版印刷股份有限公司 Thin film transistor array and image display device

Also Published As

Publication number Publication date
TWI301307B (en) 2008-09-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees