TW200741870A - Method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices - Google Patents

Method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices

Info

Publication number
TW200741870A
TW200741870A TW096106492A TW96106492A TW200741870A TW 200741870 A TW200741870 A TW 200741870A TW 096106492 A TW096106492 A TW 096106492A TW 96106492 A TW96106492 A TW 96106492A TW 200741870 A TW200741870 A TW 200741870A
Authority
TW
Taiwan
Prior art keywords
copper
fabrication
filling
compositions
semiconductor devices
Prior art date
Application number
TW096106492A
Other languages
English (en)
Other versions
TWI437638B (zh
Inventor
Jose Gonzalez
Herve Monchoix
Original Assignee
Alchimer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alchimer filed Critical Alchimer
Publication of TW200741870A publication Critical patent/TW200741870A/zh
Application granted granted Critical
Publication of TWI437638B publication Critical patent/TWI437638B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
TW096106492A 2006-02-21 2007-02-26 用於半導體元件之製造中直接銅電鍍及填補以形成內連線之方法與組合物 TWI437638B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77467506P 2006-02-21 2006-02-21

Publications (2)

Publication Number Publication Date
TW200741870A true TW200741870A (en) 2007-11-01
TWI437638B TWI437638B (zh) 2014-05-11

Family

ID=38038534

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106492A TWI437638B (zh) 2006-02-21 2007-02-26 用於半導體元件之製造中直接銅電鍍及填補以形成內連線之方法與組合物

Country Status (10)

Country Link
US (1) US7579274B2 (zh)
EP (1) EP1987177A1 (zh)
JP (1) JP5346215B2 (zh)
KR (1) KR101360595B1 (zh)
CN (1) CN101512048B (zh)
CA (1) CA2643018C (zh)
HK (1) HK1132768A1 (zh)
IL (1) IL193308A (zh)
TW (1) TWI437638B (zh)
WO (1) WO2007096390A1 (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100808796B1 (ko) * 2006-10-09 2008-03-03 동부일렉트로닉스 주식회사 전해 도금 방법
FR2930785B1 (fr) * 2008-05-05 2010-06-11 Alchimer Composition d'electrodeposition et procede de revetement d'un substrat semi-conducteur utilisant ladite composition
JP5388191B2 (ja) * 2009-05-26 2014-01-15 Ｊｘ日鉱日石金属株式会社 貫通シリコンビアを有するめっき物及びその形成方法
FR2949121A1 (fr) * 2009-08-12 2011-02-18 Alchimer Electrolyte et procede d''electrodeposition de cuivre sur une couche barriere, et substrat semi-conducteur obtenu par un tel procede.
US20110192462A1 (en) * 2010-01-03 2011-08-11 Alchimer, S.A. Solar cells
US20110162701A1 (en) * 2010-01-03 2011-07-07 Claudio Truzzi Photovoltaic Cells
KR20130108978A (ko) * 2010-06-11 2013-10-07 알쉬메 구리 도금 조성물 및 이 조성물을 사용한 반도체 기판에서 공동을 충진하기 위한 공정
FR2961220B1 (fr) * 2010-06-11 2012-08-17 Alchimer Composition d'electrodeposition de cuivre et procede de remplissage d'une cavite d'un substrat semi-conducteur utilisant cette composition
EP2528089B1 (en) * 2011-05-23 2014-03-05 Alchimer Method for forming a vertical electrical connection in a layered semiconductor structure
CN103426814B (zh) * 2012-05-24 2015-04-01 中芯国际集成电路制造(上海)有限公司 填充金属的方法
FR2995912B1 (fr) 2012-09-24 2014-10-10 Alchimer Electrolyte et procede d'electrodeposition de cuivre sur une couche barriere
TWI478861B (zh) * 2012-11-22 2015-04-01 Univ Nat Chunghsing Electrodeposition of copper nanoparticles
US9349636B2 (en) * 2013-09-26 2016-05-24 Intel Corporation Interconnect wires including relatively low resistivity cores
CN103579101A (zh) * 2013-11-05 2014-02-12 复旦大学 采用脉冲电镀铜方式实现铜互连的方法
KR102312018B1 (ko) 2013-12-09 2021-10-13 아베니 전기화학적 불활성 양이온을 함유하는 구리 전착 배쓰
JP6585434B2 (ja) * 2014-10-06 2019-10-02 株式会社荏原製作所 めっき方法
US9758845B2 (en) * 2014-12-09 2017-09-12 Intel Corporation Microelectronic substrates having copper alloy conductive route structures
US10329683B2 (en) 2016-11-03 2019-06-25 Lam Research Corporation Process for optimizing cobalt electrofill using sacrificial oxidants
FR3061601B1 (fr) 2016-12-29 2022-12-30 Aveni Solution d'electrodeposition de cuivre et procede pour des motifs de facteur de forme eleve
KR102056980B1 (ko) 2017-03-31 2019-12-17 제이엑스금속주식회사 황산구리, 황산구리 용액, 도금액, 황산구리의 제조 방법, 반도체 회로 기판의 제조 방법 및 전자기기의 제조 방법
CN110724983B (zh) * 2019-10-12 2022-02-08 天津大学 一种利用脉冲电沉积法制备纳米铜包覆碳化钨核壳结构粉体的方法
US11972973B1 (en) 2023-10-04 2024-04-30 Chun-Ming Lin Semiconductor structure and method of manufacturing a semiconductor structure

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151168A (en) * 1990-09-24 1992-09-29 Micron Technology, Inc. Process for metallizing integrated circuits with electrolytically-deposited copper
TW593731B (en) * 1998-03-20 2004-06-21 Semitool Inc Apparatus for applying a metal structure to a workpiece
US6309969B1 (en) * 1998-11-03 2001-10-30 The John Hopkins University Copper metallization structure and method of construction
JP3271756B2 (ja) * 1999-03-01 2002-04-08 日本電気株式会社 半導体装置の製造方法
US7135404B2 (en) 2002-01-10 2006-11-14 Semitool, Inc. Method for applying metal features onto barrier layers using electrochemical deposition
US20050145499A1 (en) 2000-06-05 2005-07-07 Applied Materials, Inc. Plating of a thin metal seed layer
US20050006245A1 (en) 2003-07-08 2005-01-13 Applied Materials, Inc. Multiple-step electrodeposition process for direct copper plating on barrier metals
JP2002004081A (ja) * 2000-06-16 2002-01-09 Learonal Japan Inc シリコンウエハーへの電気めっき方法
US20020092673A1 (en) * 2001-01-17 2002-07-18 International Business Machines Corporation Tungsten encapsulated copper interconnections using electroplating
US6464779B1 (en) 2001-01-19 2002-10-15 Novellus Systems, Inc. Copper atomic layer chemical vapor desposition
KR20020092444A (ko) 2001-02-23 2002-12-11 가부시키 가이샤 에바라 세이사꾸쇼 구리-도금 용액, 도금 방법 및 도금 장치
JP4207394B2 (ja) 2001-03-28 2009-01-14 株式会社村田製作所 セラミック電子部品の銅電極形成方法
JP2002329682A (ja) 2001-04-27 2002-11-15 Anelva Corp Ｃｕ薄膜作製方法
US6723219B2 (en) 2001-08-27 2004-04-20 Micron Technology, Inc. Method of direct electroplating on a low conductivity material, and electroplated metal deposited therewith
US6664633B1 (en) 2001-09-10 2003-12-16 Lsi Logic Corporation Alkaline copper plating
US6812143B2 (en) 2002-04-26 2004-11-02 International Business Machines Corporation Process of forming copper structures
JP4224434B2 (ja) * 2004-06-30 2009-02-12 パナソニック株式会社 半導体装置及びその製造方法
US7438794B2 (en) 2004-09-30 2008-10-21 Intel Corporation Method of copper electroplating to improve gapfill

Also Published As

Publication number Publication date
JP5346215B2 (ja) 2013-11-20
WO2007096390A1 (en) 2007-08-30
TWI437638B (zh) 2014-05-11
US7579274B2 (en) 2009-08-25
KR101360595B1 (ko) 2014-02-11
HK1132768A1 (en) 2010-03-05
JP2009527912A (ja) 2009-07-30
IL193308A (en) 2013-06-27
CA2643018C (en) 2014-04-22
US20070272560A1 (en) 2007-11-29
CN101512048B (zh) 2011-12-28
IL193308A0 (en) 2009-05-04
CA2643018A1 (en) 2007-08-30
EP1987177A1 (en) 2008-11-05
KR20080100813A (ko) 2008-11-19
CN101512048A (zh) 2009-08-19

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