TW200739647A - Cathode and counter-cathode arrangement in an ion source - Google Patents

Cathode and counter-cathode arrangement in an ion source

Info

Publication number
TW200739647A
TW200739647A TW095112873A TW95112873A TW200739647A TW 200739647 A TW200739647 A TW 200739647A TW 095112873 A TW095112873 A TW 095112873A TW 95112873 A TW95112873 A TW 95112873A TW 200739647 A TW200739647 A TW 200739647A
Authority
TW
Taiwan
Prior art keywords
cathode
voltage potential
counter
arc chamber
electrode
Prior art date
Application number
TW095112873A
Other languages
Chinese (zh)
Other versions
TWI336484B (en
Inventor
Richard David Goldberg
Christopher James Sydney Burgess
Andrew Stephen Devaney
David George Armour
David Kirkwood
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to TW95112873A priority Critical patent/TWI336484B/en
Publication of TW200739647A publication Critical patent/TW200739647A/en
Application granted granted Critical
Publication of TWI336484B publication Critical patent/TWI336484B/en

Links

Abstract

The present invention relates to ion sources comprising a cathode and a counter-cathode that are suitable for ion implanters. Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber. Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer. The ion source according to the present invention further comprises a cathode arranged to emit electrons into the arc chamber; an electrode positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources arranged to bias the electrode; and a voltage potential adjuster operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.
TW95112873A 2006-04-11 2006-04-11 Cathode and counter-cathode arrangement in an ion source TWI336484B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95112873A TWI336484B (en) 2006-04-11 2006-04-11 Cathode and counter-cathode arrangement in an ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95112873A TWI336484B (en) 2006-04-11 2006-04-11 Cathode and counter-cathode arrangement in an ion source

Publications (2)

Publication Number Publication Date
TW200739647A true TW200739647A (en) 2007-10-16
TWI336484B TWI336484B (en) 2011-01-21

Family

ID=45075078

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95112873A TWI336484B (en) 2006-04-11 2006-04-11 Cathode and counter-cathode arrangement in an ion source

Country Status (1)

Country Link
TW (1) TWI336484B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI483281B (en) * 2010-02-24 2015-05-01 Kla Tencor Corp Methods and apparatus for reflecting electrons
CN109841470A (en) * 2017-11-29 2019-06-04 台湾积体电路制造股份有限公司 Device for semiconductor ion implant
TWI773081B (en) * 2020-01-30 2022-08-01 德商Ｉｃｔ積體電路測試股份有限公司 Method of operating a charged particle gun, charged particle gun, and charged particle beam device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI483281B (en) * 2010-02-24 2015-05-01 Kla Tencor Corp Methods and apparatus for reflecting electrons
CN109841470A (en) * 2017-11-29 2019-06-04 台湾积体电路制造股份有限公司 Device for semiconductor ion implant
CN109841470B (en) * 2017-11-29 2023-08-01 台湾积体电路制造股份有限公司 Apparatus for ion implantation and method for generating ions during ion implantation
TWI773081B (en) * 2020-01-30 2022-08-01 德商Ｉｃｔ積體電路測試股份有限公司 Method of operating a charged particle gun, charged particle gun, and charged particle beam device

Also Published As

Publication number Publication date
TWI336484B (en) 2011-01-21

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees