TW200723530A - Carbon nano tube field effect transistor - Google Patents

Carbon nano tube field effect transistor

Info

Publication number
TW200723530A
TW200723530A TW095107485A TW95107485A TW200723530A TW 200723530 A TW200723530 A TW 200723530A TW 095107485 A TW095107485 A TW 095107485A TW 95107485 A TW95107485 A TW 95107485A TW 200723530 A TW200723530 A TW 200723530A
Authority
TW
Taiwan
Prior art keywords
carbon nano
nano tube
field effect
effect transistor
substrate
Prior art date
Application number
TW095107485A
Other languages
English (en)
Inventor
Seiji Takeda
Satoshi Hattori
Atsushi Ishii
Koichi Mukasa
Makoto Sawamura
Hirotaka Hosoi
Yoshiki Yamada
Hiroichi Ozaki
Kazuhisa Sueoka
Original Assignee
Univ Hokkaido Nat Univ Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Hokkaido Nat Univ Corp filed Critical Univ Hokkaido Nat Univ Corp
Publication of TW200723530A publication Critical patent/TW200723530A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Carbon And Carbon Compounds (AREA)
TW095107485A 2005-03-28 2006-03-06 Carbon nano tube field effect transistor TW200723530A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005092391 2005-03-28
JP2005243305 2005-08-24

Publications (1)

Publication Number Publication Date
TW200723530A true TW200723530A (en) 2007-06-16

Family

ID=37053140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107485A TW200723530A (en) 2005-03-28 2006-03-06 Carbon nano tube field effect transistor

Country Status (3)

Country Link
JP (1) JPWO2006103872A1 (zh)
TW (1) TW200723530A (zh)
WO (1) WO2006103872A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698210B2 (en) 2008-05-28 2014-04-15 Mitsumi Electric, Co., Ltd. Sensor and method for manufacturing the same
TWI653447B (zh) 2013-05-29 2019-03-11 南非科學與工業研究理事會 場效電晶體及包括多個場效電晶體的氣體偵測器

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006103872A1 (ja) * 2005-03-28 2008-09-04 国立大学法人 北海道大学 カーボンナノチューブ電界効果トランジスタ
KR101362138B1 (ko) * 2007-03-07 2014-02-13 엘지디스플레이 주식회사 평판표시패널 및 그 제조방법
EP2160612A4 (en) * 2007-05-23 2016-04-27 Univ Arizona SYSTEMS AND METHODS FOR INTEGRATED ELECTROCHEMICAL AND ELECTRICAL DETECTION
JP5077660B2 (ja) * 2007-07-25 2012-11-21 三菱マテリアル株式会社 金属粉末複合材を製造するコーティング組成物と、該金属粉末複合材によって製造された金属複合材、金属積層複合材、およびこれらの製造方法
JP2009064925A (ja) * 2007-09-05 2009-03-26 Brother Ind Ltd 薄膜トランジスタの製造方法及びその製造方法により製造された薄膜トランジスタ。
JP2009250631A (ja) * 2008-04-01 2009-10-29 Mitsumi Electric Co Ltd センサ製造方法
JP5371453B2 (ja) * 2009-01-09 2013-12-18 ミツミ電機株式会社 電界効果トランジスタおよびその製造方法
JP5433839B2 (ja) 2009-07-17 2014-03-05 国立大学法人北海道大学 Ｃｎｔセンサーによる過酸化物を電気的に測定する方法
FR2962667A1 (fr) * 2010-07-19 2012-01-20 Commissariat Energie Atomique Procede de fonctionnalisation selective d'un materiau semiconducteur par activation thermique par effet joule
US20150192540A1 (en) 2012-10-18 2015-07-09 Bio Sensor Inc. Sensor, sensor module, and detection method
KR101558470B1 (ko) * 2013-09-16 2015-10-08 서울대학교산학협력단 이종이합체 g 단백질 연결 수용체를 포함하는 나노베지클, 이의 제조 방법, 및 이를 포함하는 전계효과 트랜지스터 기반 미각 센서, 이의 제조 방법
DE102013018850A1 (de) 2013-11-09 2015-05-13 Forschungszentrum Jülich GmbH Vorrichtung und Verfahren zur Messung kleiner Spannungen und Potentiale an einer biologischen, chemischen oder anderen Probe
JP6296880B2 (ja) * 2014-04-23 2018-03-20 バイオセンサー株式会社 測定装置および測定方法
JP6782968B2 (ja) * 2016-08-26 2020-11-11 国立大学法人東京海洋大学 電極およびバイオセンサ
WO2018079314A1 (ja) 2016-10-24 2018-05-03 東レ株式会社 半導体センサおよびその製造方法、ならびに複合センサ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2430888C (en) * 2000-12-11 2013-10-22 President And Fellows Of Harvard College Nanosensors
CN102183569B (zh) * 2003-05-23 2013-09-04 独立行政法人科学技术振兴机构 试样中的被检测物质的检测方法
JP2005034970A (ja) * 2003-07-17 2005-02-10 Japan Science & Technology Agency パターン配列化カーボンナノ物質構成体およびその製造方法
JP4669213B2 (ja) * 2003-08-29 2011-04-13 独立行政法人科学技術振興機構 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ
JPWO2006103872A1 (ja) * 2005-03-28 2008-09-04 国立大学法人 北海道大学 カーボンナノチューブ電界効果トランジスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698210B2 (en) 2008-05-28 2014-04-15 Mitsumi Electric, Co., Ltd. Sensor and method for manufacturing the same
TWI653447B (zh) 2013-05-29 2019-03-11 南非科學與工業研究理事會 場效電晶體及包括多個場效電晶體的氣體偵測器

Also Published As

Publication number Publication date
WO2006103872A1 (ja) 2006-10-05
JPWO2006103872A1 (ja) 2008-09-04

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