TW200709418A - Processing method of low temperature poly silicon - Google Patents

Processing method of low temperature poly silicon

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Publication number
TW200709418A
TW200709418A TW094128660A TW94128660A TW200709418A TW 200709418 A TW200709418 A TW 200709418A TW 094128660 A TW094128660 A TW 094128660A TW 94128660 A TW94128660 A TW 94128660A TW 200709418 A TW200709418 A TW 200709418A
Authority
TW
Taiwan
Prior art keywords
processing method
poly silicon
low temperature
temperature poly
nano
Prior art date
Application number
TW094128660A
Other languages
Chinese (zh)
Other versions
TWI263341B (en
Inventor
Ru-Yuan Yang
Min-Hang Weng
Cheng-Yuan Hung
Hung-Wei Wu
Yan-Kuin Su
Original Assignee
Ru-Yuan Yang
Min-Hang Weng
Yan-Kuin Su
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ru-Yuan Yang, Min-Hang Weng, Yan-Kuin Su filed Critical Ru-Yuan Yang
Priority to TW94128660A priority Critical patent/TWI263341B/en
Application granted granted Critical
Publication of TWI263341B publication Critical patent/TWI263341B/en
Publication of TW200709418A publication Critical patent/TW200709418A/en

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Abstract

The present invention discloses a processing method of low temperature poly silicon induced by nano-metallic particles, used for the thin film transistors (TFTs) and solar cells. The processing method according to the present invention use the nano-metallic particles wiyh large surface and high induced ability, combined with steps of annealing, to reduce the processing temperature of forming the poly silicon film with larger areas and different thickness, therefore the reduce the thermal budget of the process.
TW94128660A 2005-08-23 2005-08-23 Processing method of low temperature poly silicon TWI263341B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94128660A TWI263341B (en) 2005-08-23 2005-08-23 Processing method of low temperature poly silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94128660A TWI263341B (en) 2005-08-23 2005-08-23 Processing method of low temperature poly silicon

Publications (2)

Publication Number Publication Date
TWI263341B TWI263341B (en) 2006-10-01
TW200709418A true TW200709418A (en) 2007-03-01

Family

ID=37966341

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94128660A TWI263341B (en) 2005-08-23 2005-08-23 Processing method of low temperature poly silicon

Country Status (1)

Country Link
TW (1) TWI263341B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI481042B (en) * 2010-12-16 2015-04-11 Univ Nat Pingtung Sci & Tech Manufacturing method of poly silicon based thin film applied on solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI481042B (en) * 2010-12-16 2015-04-11 Univ Nat Pingtung Sci & Tech Manufacturing method of poly silicon based thin film applied on solar cell

Also Published As

Publication number Publication date
TWI263341B (en) 2006-10-01

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Legal Events

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