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Application filed by Ru-Yuan Yang, Min-Hang Weng, Yan-Kuin SufiledCriticalRu-Yuan Yang
Priority to TW94128660ApriorityCriticalpatent/TWI263341B/en
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Publication of TWI263341BpublicationCriticalpatent/TWI263341B/en
Publication of TW200709418ApublicationCriticalpatent/TW200709418A/en
The present invention discloses a processing method of low temperature poly silicon induced by nano-metallic particles, used for the thin film transistors (TFTs) and solar cells. The processing method according to the present invention use the nano-metallic particles wiyh large surface and high induced ability, combined with steps of annealing, to reduce the processing temperature of forming the poly silicon film with larger areas and different thickness, therefore the reduce the thermal budget of the process.
TW94128660A2005-08-232005-08-23Processing method of low temperature poly silicon
TWI263341B
(en)
Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition