TW200707722A - Integrated circuit transformer devices for on-chip millimeter-wave applications - Google Patents

Integrated circuit transformer devices for on-chip millimeter-wave applications

Info

Publication number
TW200707722A
TW200707722A TW095112387A TW95112387A TW200707722A TW 200707722 A TW200707722 A TW 200707722A TW 095112387 A TW095112387 A TW 095112387A TW 95112387 A TW95112387 A TW 95112387A TW 200707722 A TW200707722 A TW 200707722A
Authority
TW
Taiwan
Prior art keywords
integrated circuit
circuit transformer
transformer devices
millimeter
wave applications
Prior art date
Application number
TW095112387A
Other languages
English (en)
Other versions
TWI380440B (en
Inventor
David Goren
Ullrich R Pfeiffer
Benny Sheinman
Shlomo Shlafman
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200707722A publication Critical patent/TW200707722A/zh
Application granted granted Critical
Publication of TWI380440B publication Critical patent/TWI380440B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223Capacitor integral with wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225Shielding layers formed together with wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • H01L23/5286Arrangements of power or ground buses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/645Inductive arrangements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26Push-pull amplifiers; Phase-splitters therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085Long tailed pairs
    • H03F3/45089Non-folded cascode stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602Combinations of several amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microwave Amplifiers (AREA)
  • Coils Or Transformers For Communication (AREA)
TW095112387A 2005-04-08 2006-04-07 Integrated circuit transformer devices for on-chip millimeter-wave applications TWI380440B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/102,292 US7427801B2 (en) 2005-04-08 2005-04-08 Integrated circuit transformer devices for on-chip millimeter-wave applications

Publications (2)

Publication Number Publication Date
TW200707722A true TW200707722A (en) 2007-02-16
TWI380440B TWI380440B (en) 2012-12-21

Family

ID=37082407

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112387A TWI380440B (en) 2005-04-08 2006-04-07 Integrated circuit transformer devices for on-chip millimeter-wave applications

Country Status (6)

Country Link
US (3) US7427801B2 (zh)
EP (1) EP1866937B1 (zh)
JP (1) JP5065242B2 (zh)
CN (1) CN101142639B (zh)
TW (1) TWI380440B (zh)
WO (1) WO2006110207A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8797135B2 (en) 2008-03-12 2014-08-05 Mediatek Inc. Transformer power combiner having a plurality of current combiners coupled in series and a voltage combiner coupled to a series connection of the current combiners
US8994488B2 (en) 2008-03-12 2015-03-31 Mediatek Inc. Transformer power splitter having primary winding conductors magnetically coupled to secondary winding conductors and configured in topology including series connection and parallel connection

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070069717A1 (en) * 2005-09-28 2007-03-29 Cheung Tak S Self-shielded electronic components
KR100758991B1 (ko) * 2006-02-03 2007-09-17 삼성전자주식회사 Rfid 시스템을 구비한 이동통신 단말기
JP5366932B2 (ja) * 2007-05-08 2013-12-11 スキャニメトリクス,インコーポレイテッド 超高速信号送受信
US8362481B2 (en) 2007-05-08 2013-01-29 Scanimetrics Inc. Ultra high speed signal transmission/reception
US8261228B1 (en) 2008-10-01 2012-09-04 Cadence Design Systems, Inc. Technique for modeling parasitics from layout during circuit design and for parasitic aware circuit design using modes of varying accuracy
JP5556072B2 (ja) * 2009-01-07 2014-07-23 ソニー株式会社 半導体装置、その製造方法、ミリ波誘電体内伝送装置
US8143952B2 (en) * 2009-10-08 2012-03-27 Qualcomm Incorporated Three dimensional inductor and transformer
KR101075013B1 (ko) * 2009-12-11 2011-10-19 전자부품연구원 빔 성형 rf 벡터모듈레이터
US20110161064A1 (en) * 2009-12-31 2011-06-30 Lorentz Solution, Inc. Physics-based compact model generation from electromagnetic simulation data
US20120002377A1 (en) * 2010-06-30 2012-01-05 William French Galvanic isolation transformer
CN102394578A (zh) * 2011-10-20 2012-03-28 刘训春 一种低失真变压器输出的晶体管音频功率放大电路
EP2669906B1 (en) 2012-06-01 2018-08-29 Nxp B.V. An integrated circuit based transformer
DE102013101768A1 (de) * 2013-02-22 2014-08-28 Intel Mobile Communications GmbH Transformator und elektrische Schaltung
US8901714B2 (en) * 2013-03-14 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Transmission line formed adjacent seal ring
CN104616557B (zh) * 2015-01-30 2017-05-17 南车株洲电力机车有限公司 一种轨道车辆模拟电路生成方法、***及控制方法、***
CN104915527A (zh) * 2015-07-15 2015-09-16 哈尔滨工业大学 一种基于变分积分离散拉格朗日模型的Buck-Boost变换器建模与非线性分析方法
JP6930427B2 (ja) * 2016-01-14 2021-09-01 ソニーグループ株式会社 半導体装置
WO2017210153A1 (en) * 2016-05-30 2017-12-07 Coventor, Inc. System and method for electrical behavior modeling in a 3d virtual fabrication environment
JP6766946B2 (ja) * 2017-02-28 2020-10-14 株式会社村田製作所 積層型電子部品および積層型電子部品の製造方法
US10559561B2 (en) 2018-01-19 2020-02-11 Xilinx, Inc. Isolation enhancement with on-die slot-line on power/ground grid structure
US11270951B2 (en) * 2018-12-13 2022-03-08 Qualcomm Incorporated Substrate comprising at least one patterned ground plane for shielding
CN109920633A (zh) * 2019-03-21 2019-06-21 惠州市纬特科技有限公司 减小电磁干扰的变压器
US11764739B2 (en) * 2020-04-23 2023-09-19 Smarter Microelectronics (Guang Zhou) Co., Ltd. Radio frequency power amplifier with harmonic suppression

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134440A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体集積回路装置
US5223800A (en) 1991-09-30 1993-06-29 Itt Corporation Distributed arrays of microelectronic amplifiers
JPH07235796A (ja) * 1994-02-25 1995-09-05 Hitachi Denshi Ltd 多層基板を用いた高周波回路
US5477204A (en) 1994-07-05 1995-12-19 Motorola, Inc. Radio frequency transformer
US5760456A (en) * 1995-12-21 1998-06-02 Grzegorek; Andrew Z. Integrated circuit compatible planar inductors with increased Q
US5697088A (en) * 1996-08-05 1997-12-09 Motorola, Inc. Balun transformer
WO1998050956A1 (en) 1997-05-02 1998-11-12 The Board Of Trustees Of The Leland Stanford Junior University Patterned ground shields for integrated circuit inductors
FR2771843B1 (fr) * 1997-11-28 2000-02-11 Sgs Thomson Microelectronics Transformateur en circuit integre
US6137376A (en) 1999-07-14 2000-10-24 International Business Machines Corporation Printed BALUN circuits
JP2001060809A (ja) * 1999-08-19 2001-03-06 Sony Corp 回路素子およびプリント配線板
ATE522979T1 (de) 2000-10-10 2011-09-15 California Inst Of Techn Verteilte leistungsverstärkerarchitektur mit kreisförmiger geometrie
US6856199B2 (en) 2000-10-10 2005-02-15 California Institute Of Technology Reconfigurable distributed active transformers
US6731166B1 (en) 2001-11-26 2004-05-04 Analog Devices, Inc. Power amplifier system with multiple primary windings
JP4274730B2 (ja) * 2002-01-30 2009-06-10 株式会社ルネサステクノロジ 半導体集積回路装置
JP2003257739A (ja) * 2002-02-28 2003-09-12 Koa Corp 高周波デバイス
TW200306062A (en) 2002-03-11 2003-11-01 California Inst Of Techn Multi-cascode transistors
AU2003225069A1 (en) * 2002-04-18 2003-11-03 University Of South Florida Global equivalent circuit modeling system for substrate mounted circuit components incoporating substrate dependent characteristics
US6794978B2 (en) * 2002-05-15 2004-09-21 John C. Tung Accurate multi-ground inductors for high-speed integrated circuits
US7091813B2 (en) 2002-06-13 2006-08-15 International Business Machines Corporation Integrated circuit transformer for radio frequency applications
TWI300617B (en) * 2002-11-15 2008-09-01 Via Tech Inc Low substrate loss inductor
JP4664619B2 (ja) * 2003-05-16 2011-04-06 パナソニック株式会社 相互誘導回路
JP4477964B2 (ja) * 2003-07-31 2010-06-09 太陽誘電株式会社 高周波回路の設計方法及び設計装置と高周波回路の設計に係る表示方法
US7084728B2 (en) * 2003-12-15 2006-08-01 Nokia Corporation Electrically decoupled integrated transformer having at least one grounded electric shield

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8797135B2 (en) 2008-03-12 2014-08-05 Mediatek Inc. Transformer power combiner having a plurality of current combiners coupled in series and a voltage combiner coupled to a series connection of the current combiners
US8994488B2 (en) 2008-03-12 2015-03-31 Mediatek Inc. Transformer power splitter having primary winding conductors magnetically coupled to secondary winding conductors and configured in topology including series connection and parallel connection

Also Published As

Publication number Publication date
CN101142639A (zh) 2008-03-12
US8453078B2 (en) 2013-05-28
US20060226510A1 (en) 2006-10-12
TWI380440B (en) 2012-12-21
EP1866937B1 (en) 2012-11-21
JP2008537849A (ja) 2008-09-25
US7427801B2 (en) 2008-09-23
EP1866937A2 (en) 2007-12-19
US8122393B2 (en) 2012-02-21
WO2006110207A3 (en) 2007-07-19
WO2006110207A2 (en) 2006-10-19
US20080195988A1 (en) 2008-08-14
EP1866937A4 (en) 2010-09-29
US20120060135A1 (en) 2012-03-08
JP5065242B2 (ja) 2012-10-31
CN101142639B (zh) 2011-10-12

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