TW200705651A - Image sensors including active pixel sensor arrays - Google Patents

Image sensors including active pixel sensor arrays

Info

Publication number
TW200705651A
TW200705651A TW095125019A TW95125019A TW200705651A TW 200705651 A TW200705651 A TW 200705651A TW 095125019 A TW095125019 A TW 095125019A TW 95125019 A TW95125019 A TW 95125019A TW 200705651 A TW200705651 A TW 200705651A
Authority
TW
Taiwan
Prior art keywords
active
image sensors
sensor arrays
pixel sensor
active pixel
Prior art date
Application number
TW095125019A
Other languages
English (en)
Other versions
TWI310607B (en
Inventor
Duck-Hyung Lee
Kang-Bok Lee
Seok-Ha Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050061968A external-priority patent/KR20070006982A/ko
Priority claimed from KR1020050068103A external-priority patent/KR100703979B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200705651A publication Critical patent/TW200705651A/zh
Application granted granted Critical
Publication of TWI310607B publication Critical patent/TWI310607B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW095125019A 2005-07-09 2006-07-10 Image sensors including active pixel sensor arrays TWI310607B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050061968A KR20070006982A (ko) 2005-07-09 2005-07-09 수광 효율이 향상된 독출 소자 공유 이미지 센서
KR1020050068103A KR100703979B1 (ko) 2005-07-26 2005-07-26 수광 효율이 향상된 2 공유 픽셀 이미지 센서 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200705651A true TW200705651A (en) 2007-02-01
TWI310607B TWI310607B (en) 2009-06-01

Family

ID=37617520

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125019A TWI310607B (en) 2005-07-09 2006-07-10 Image sensors including active pixel sensor arrays

Country Status (3)

Country Link
US (1) US7541628B2 (zh)
JP (1) JP2007020194A (zh)
TW (1) TWI310607B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395475B (zh) * 2007-08-21 2013-05-01 Sony Corp 影像拾取設備
TWI413242B (zh) * 2007-08-10 2013-10-21 Hon Hai Prec Ind Co Ltd 固態圖像感測器
TWI673858B (zh) * 2015-11-18 2019-10-01 美商豪威科技股份有限公司 在影像感測器中作為接觸蝕刻停止層之硬遮罩

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3709873B2 (ja) * 2003-02-19 2005-10-26 ソニー株式会社 固体撮像装置及び撮像カメラ
US7683407B2 (en) * 2005-08-01 2010-03-23 Aptina Imaging Corporation Structure and method for building a light tunnel for use with imaging devices
US7557419B2 (en) * 2006-07-21 2009-07-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for preventing or reducing color cross-talk between adjacent pixels in an image sensor device
US8053287B2 (en) * 2006-09-29 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making multi-step photodiode junction structure for backside illuminated sensor
JP4420039B2 (ja) * 2007-02-16 2010-02-24 ソニー株式会社 固体撮像装置
KR100835892B1 (ko) * 2007-03-26 2008-06-09 (주)실리콘화일 칩 적층 이미지센서
JP5214904B2 (ja) * 2007-04-12 2013-06-19 ルネサスエレクトロニクス株式会社 固体撮像素子の製造方法
KR100851495B1 (ko) * 2007-05-14 2008-08-08 매그나칩 반도체 유한회사 Ｊｆｅｔ 및 수직적으로 집적된 리셋 다이오드를 갖는이미지 센서의 소형 픽셀
KR100851494B1 (ko) 2007-05-14 2008-08-08 매그나칩 반도체 유한회사 수직적으로 집적된 세트 및 리셋 다이오드를 갖는 ｃｍｏｓ이미지 센서를 위한 소형 픽셀
KR20080104589A (ko) * 2007-05-28 2008-12-03 삼성전자주식회사 Ｇｒ/Ｇｂ 감도 차이를 제거할 수 있는 씨모스 이미지센서의 배치구조 및 배치방법
US8072015B2 (en) * 2007-06-04 2011-12-06 Sony Corporation Solid-state imaging device and manufacturing method thereof
KR100904716B1 (ko) * 2007-06-13 2009-06-29 삼성전자주식회사 수광 효율이 향상된 이미지 센서
JP2009038263A (ja) * 2007-08-02 2009-02-19 Sharp Corp 固体撮像素子および電子情報機器
DE102007045448A1 (de) * 2007-09-24 2009-04-02 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
JP2011114324A (ja) 2009-11-30 2011-06-09 Sony Corp 固体撮像装置及び電子機器
JP5780711B2 (ja) * 2010-04-06 2015-09-16 キヤノン株式会社 固体撮像装置
TWI502212B (zh) * 2013-01-11 2015-10-01 Pixart Imaging Inc 光學裝置、使用微透鏡之感光元件及其製作方法
JP6246076B2 (ja) * 2014-06-05 2017-12-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
WO2016136488A1 (ja) * 2015-02-27 2016-09-01 ソニー株式会社 半導体装置、固体撮像素子、撮像装置、並びに電子機器
JP2017054966A (ja) * 2015-09-10 2017-03-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
KR102519178B1 (ko) * 2015-09-25 2023-04-06 삼성전자주식회사 색분리 소자를 포함하는 이미지 센서 및 이를 포함하는 촬상 장치
KR102554417B1 (ko) 2018-06-18 2023-07-11 삼성전자주식회사 이미지 센서

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262345A (en) * 1990-01-25 1993-11-16 Analog Devices, Inc. Complimentary bipolar/CMOS fabrication method
US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3337976B2 (ja) * 1998-04-30 2002-10-28 キヤノン株式会社 撮像装置
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
JP3524391B2 (ja) * 1998-08-05 2004-05-10 キヤノン株式会社 撮像装置及びそれを用いた撮像システム
US6734906B1 (en) 1998-09-02 2004-05-11 Canon Kabushiki Kaisha Image pickup apparatus with photoelectric conversion portions arranged two dimensionally
US6657665B1 (en) * 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
US6693670B1 (en) * 1999-07-29 2004-02-17 Vision - Sciences, Inc. Multi-photodetector unit cell
JP4216976B2 (ja) 1999-12-06 2009-01-28 富士フイルム株式会社 固体撮像装置およびその製造方法
JP2001250931A (ja) * 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
US6301051B1 (en) 2000-04-05 2001-10-09 Rockwell Technologies, Llc High fill-factor microlens array and fabrication method
JP4721380B2 (ja) * 2000-04-14 2011-07-13 キヤノン株式会社 固体撮像装置および撮像システム
US6873338B2 (en) * 2002-03-21 2005-03-29 International Business Machines Corporation Anti-moire pixel array having multiple pixel types
US7489352B2 (en) * 2002-11-15 2009-02-10 Micron Technology, Inc. Wide dynamic range pinned photodiode active pixel sensor (APS)
US7859581B2 (en) 2003-07-15 2010-12-28 Eastman Kodak Company Image sensor with charge binning and dual channel readout
US7232712B2 (en) * 2003-10-28 2007-06-19 Dongbu Electronics Co., Ltd. CMOS image sensor and method for fabricating the same
US7755116B2 (en) * 2004-12-30 2010-07-13 Ess Technology, Inc. Method and apparatus for controlling charge transfer in CMOS sensors with an implant by the transfer gate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413242B (zh) * 2007-08-10 2013-10-21 Hon Hai Prec Ind Co Ltd 固態圖像感測器
TWI395475B (zh) * 2007-08-21 2013-05-01 Sony Corp 影像拾取設備
TWI673858B (zh) * 2015-11-18 2019-10-01 美商豪威科技股份有限公司 在影像感測器中作為接觸蝕刻停止層之硬遮罩

Also Published As

Publication number Publication date
JP2007020194A (ja) 2007-01-25
US20070007559A1 (en) 2007-01-11
TWI310607B (en) 2009-06-01
US7541628B2 (en) 2009-06-02

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