TW200703624A - Method of fabricating dynamic random access memory and array of the same - Google Patents
Method of fabricating dynamic random access memory and array of the sameInfo
- Publication number
- TW200703624A TW200703624A TW094122285A TW94122285A TW200703624A TW 200703624 A TW200703624 A TW 200703624A TW 094122285 A TW094122285 A TW 094122285A TW 94122285 A TW94122285 A TW 94122285A TW 200703624 A TW200703624 A TW 200703624A
- Authority
- TW
- Taiwan
- Prior art keywords
- lines
- transistor
- array
- random access
- dynamic random
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
- Dram (AREA)
Abstract
An array of dynamic random access memory is described. The array of dynamic random access memory includes a silicon-on-insulator substrate, a plurality of memory units, a plurality of body lines, a plurality of word lines, and a plurality of bit lines. The memory cells are disposed on the silicon-on-insulator substrate and arranged in row and column lines. Each memory unit includes a transistor and a capacitor. The body lines are parallel in row lines. Each body line is stringed two transistors in the same row line and connected electrically to a body region of the transistor. The word lines are parallel with the body lines. Each word line is connected to two gate structure of the transistor in the same row line. The bit lines are perpendicular with the word lines. Each bit line is stringed the transistor in the same column and connected electrically to a source/drain region of the transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94122285A TWI278100B (en) | 2005-07-01 | 2005-07-01 | Method of fabricating dynamic random access memory and array of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94122285A TWI278100B (en) | 2005-07-01 | 2005-07-01 | Method of fabricating dynamic random access memory and array of the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200703624A true TW200703624A (en) | 2007-01-16 |
| TWI278100B TWI278100B (en) | 2007-04-01 |
Family
ID=38626110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94122285A TWI278100B (en) | 2005-07-01 | 2005-07-01 | Method of fabricating dynamic random access memory and array of the same |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI278100B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI611561B (en) * | 2012-11-16 | 2018-01-11 | 愛思開海力士有限公司 | Semiconductor device and method of manufacturing the same |
| TWI807553B (en) * | 2021-01-07 | 2023-07-01 | 新加坡商新加坡優尼山帝斯電子私人有限公司 | A manufacturing method of memory device including semiconductor element |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10622030B1 (en) | 2018-10-28 | 2020-04-14 | Nanya Technology Corporation | Memory structure with non-straight word line |
| TWI796578B (en) * | 2020-07-03 | 2023-03-21 | 華邦電子股份有限公司 | Semiconductor structure and method for manufacturing the same |
-
2005
- 2005-07-01 TW TW94122285A patent/TWI278100B/en active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI611561B (en) * | 2012-11-16 | 2018-01-11 | 愛思開海力士有限公司 | Semiconductor device and method of manufacturing the same |
| US9941291B2 (en) | 2012-11-16 | 2018-04-10 | SK Hynix Inc. | Three-dimensional non-volatile memory device |
| TWI807553B (en) * | 2021-01-07 | 2023-07-01 | 新加坡商新加坡優尼山帝斯電子私人有限公司 | A manufacturing method of memory device including semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI278100B (en) | 2007-04-01 |
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