TW200702914A - Radiation sensitive resin composition, projections, spacers, vertically aligned type liquid crystal display element, and the method for forming projections and spacers - Google Patents
Radiation sensitive resin composition, projections, spacers, vertically aligned type liquid crystal display element, and the method for forming projections and spacersInfo
- Publication number
- TW200702914A TW200702914A TW095114620A TW95114620A TW200702914A TW 200702914 A TW200702914 A TW 200702914A TW 095114620 A TW095114620 A TW 095114620A TW 95114620 A TW95114620 A TW 95114620A TW 200702914 A TW200702914 A TW 200702914A
- Authority
- TW
- Taiwan
- Prior art keywords
- spacers
- projections
- liquid crystal
- resin composition
- crystal display
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Liquid Crystal (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
This invention provides a radiation sensitive resin composition suitably used to concurrently form projections and spacers of vertically aligned type liquid crystal display element. This invention provides a radiation sensitive resin composition used to concurrently form projections and spacers of vertically aligned type liquid crystal display element, which is characterized by comprising the following: [A] a copolymer copolymerized by the following (a1) to (a4), wherein (a1) is a unsaturated carboxylic acid and/or unsaturated carboxylic acid anhydride, (a2) epoxy-containing unsaturated compound, and (a3) unsaturated compounds represented by the following formula (1), and (a4) olefin unsaturated compounds other than the above mentioned components (a1), (a2) and (a3); (wherein, R1 is hydrogen atom or methyl, R2, R3 and R4 are independently each other, hydrogen atom, hydroxy or alkyl or alkoxy of 1 to 6 carbon atoms, n is a integer of 0 to 6); and [B] 1,2-quinodiazide compound.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005127255A JP4742662B2 (en) | 2005-04-26 | 2005-04-26 | Radiation-sensitive resin composition, protrusions and spacers formed therefrom, and liquid crystal display device comprising the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200702914A true TW200702914A (en) | 2007-01-16 |
Family
ID=37475614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095114620A TW200702914A (en) | 2005-04-26 | 2006-04-25 | Radiation sensitive resin composition, projections, spacers, vertically aligned type liquid crystal display element, and the method for forming projections and spacers |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4742662B2 (en) |
KR (1) | KR20060112225A (en) |
CN (1) | CN101059651A (en) |
TW (1) | TW200702914A (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4713262B2 (en) * | 2005-07-22 | 2011-06-29 | 昭和電工株式会社 | Photosensitive resin composition |
JP4644857B2 (en) * | 2005-07-22 | 2011-03-09 | 昭和電工株式会社 | Photosensitive resin composition |
JP4656316B2 (en) * | 2005-12-22 | 2011-03-23 | Jsr株式会社 | Interlayer insulating film, microlens, and manufacturing method thereof |
JP4884876B2 (en) * | 2006-08-07 | 2012-02-29 | 東京応化工業株式会社 | Photosensitive resin composition for interlayer insulation film |
JP5158314B2 (en) * | 2007-02-02 | 2013-03-06 | Jsr株式会社 | Liquid crystal aligning agent and liquid crystal display element |
JP5276003B2 (en) | 2007-09-28 | 2013-08-28 | 東京応化工業株式会社 | Copolymer, resin composition, display panel spacer, planarization film, thermosetting protective film, microlens, and copolymer production method |
JP2009214419A (en) * | 2008-03-11 | 2009-09-24 | Fujifilm Corp | Image forming method and cured matter made by using the same |
JP5210201B2 (en) * | 2009-02-24 | 2013-06-12 | 東京応化工業株式会社 | Photosensitive resin composition, dry film, and pattern forming method |
JP4516150B1 (en) * | 2009-02-27 | 2010-08-04 | 昭和高分子株式会社 | Photosensitive resin composition |
JP5105113B2 (en) * | 2010-03-05 | 2012-12-19 | Jsr株式会社 | Manufacturing method of liquid crystal display element |
TW201314389A (en) * | 2011-09-29 | 2013-04-01 | Wistron Corp | Method of fabricating photo spacer and liquid crystal display and array substrate |
JP6048117B2 (en) * | 2012-03-22 | 2016-12-21 | Jsr株式会社 | Liquid crystal aligning agent, liquid crystal alignment film, liquid crystal display element, and method for manufacturing liquid crystal display element |
KR102128536B1 (en) | 2017-07-04 | 2020-06-30 | 주식회사 엘지화학 | POSITIVE-WORKING PHOTORESIST COMPOSITION, PATTERN USING THE SAME, and MANUFACTURING METHOD OF THE PATTERN |
CN107329330B (en) * | 2017-07-28 | 2020-05-19 | 武汉华星光电技术有限公司 | Liquid crystal display panel, manufacturing method thereof and columnar spacer |
EP4166322A4 (en) * | 2020-06-12 | 2024-02-28 | Toppan Inc | Resin composition and film |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3484808B2 (en) * | 1995-03-24 | 2004-01-06 | Jsr株式会社 | Radiation-sensitive resin composition for forming interlayer insulating film, interlayer insulating film and method of manufacturing the same |
JP4492393B2 (en) * | 2005-03-08 | 2010-06-30 | チッソ株式会社 | Photosensitive composition and display element using the same |
-
2005
- 2005-04-26 JP JP2005127255A patent/JP4742662B2/en not_active Expired - Fee Related
-
2006
- 2006-04-21 CN CNA2006100744676A patent/CN101059651A/en active Pending
- 2006-04-25 KR KR1020060037086A patent/KR20060112225A/en not_active Application Discontinuation
- 2006-04-25 TW TW095114620A patent/TW200702914A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP2006308612A (en) | 2006-11-09 |
CN101059651A (en) | 2007-10-24 |
JP4742662B2 (en) | 2011-08-10 |
KR20060112225A (en) | 2006-10-31 |
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