TW200641167A - Nanofabrication based on sam growth - Google Patents

Nanofabrication based on sam growth

Info

Publication number
TW200641167A
TW200641167A TW094145409A TW94145409A TW200641167A TW 200641167 A TW200641167 A TW 200641167A TW 094145409 A TW094145409 A TW 094145409A TW 94145409 A TW94145409 A TW 94145409A TW 200641167 A TW200641167 A TW 200641167A
Authority
TW
Taiwan
Prior art keywords
sam
nanofabrication
molecular species
substrate surface
forming molecular
Prior art date
Application number
TW094145409A
Other languages
Chinese (zh)
Inventor
Dirk Burdinski
Ruben Bernardus Alfred Sharpe
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200641167A publication Critical patent/TW200641167A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

Abstract

The present invention relates to a process of nanofabrication based on nucleated SAM growth, to patterned substrates prepared thereby, to a nanowire or grid of nanowires prepared thereby and to electronic devices including the same. In particular, there is provided a process which comprises applying a first SAM-forming molecular species to a first surface region of the substrate surface, so as to provide a first SAM defining a scaffold pattern on the first surface region; and applying a second SAM-forming molecular species to at least a second surface region of said substrate surface which is not covered by the first SAM, whereby a second replica SAM comprising the second SAM-forming molecular species selectively forms on substrate surface adjacent to at least one edge of said first SAM.
TW094145409A 2004-12-23 2005-12-20 Nanofabrication based on sam growth TW200641167A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04106967 2004-12-23

Publications (1)

Publication Number Publication Date
TW200641167A true TW200641167A (en) 2006-12-01

Family

ID=36216850

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094145409A TW200641167A (en) 2004-12-23 2005-12-20 Nanofabrication based on sam growth

Country Status (7)

Country Link
US (1) US20090272715A1 (en)
EP (1) EP1831764A2 (en)
JP (1) JP2008525204A (en)
KR (1) KR20070086446A (en)
CN (1) CN101088044A (en)
TW (1) TW200641167A (en)
WO (1) WO2006067694A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459467B (en) * 2007-09-26 2014-11-01 Eastman Kodak Co Organosiloxane materials for selective area deposition of inorganic materials

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112008001634A5 (en) * 2007-06-21 2010-04-01 GeSIM Gesellschaft für Silizium-Mikrosysteme mbH Method and device for transfer of micro- or nanostructures by contact stamping
EP2288962A1 (en) * 2008-05-06 2011-03-02 Nano Terra Inc. Molecular resist compositions, methods of patterning substrates using the compositions and process products prepared therefrom
US20100101840A1 (en) * 2008-10-29 2010-04-29 Raytheon Company Application of a self-assembled monolayer as an oxide inhibitor
KR20110023164A (en) 2009-08-28 2011-03-08 삼성전자주식회사 Optoelectronic device
US9321269B1 (en) * 2014-12-22 2016-04-26 Stmicroelectronics S.R.L. Method for the surface treatment of a semiconductor substrate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512131A (en) * 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
US5725788A (en) * 1996-03-04 1998-03-10 Motorola Apparatus and method for patterning a surface
US6048623A (en) * 1996-12-18 2000-04-11 Kimberly-Clark Worldwide, Inc. Method of contact printing on gold coated films
US6180288B1 (en) * 1997-03-21 2001-01-30 Kimberly-Clark Worldwide, Inc. Gel sensors and method of use thereof
US6413587B1 (en) * 1999-03-02 2002-07-02 International Business Machines Corporation Method for forming polymer brush pattern on a substrate surface
EP1194960B1 (en) * 1999-07-02 2010-09-15 President and Fellows of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6703304B1 (en) * 2001-01-30 2004-03-09 Advanced Micro Devices, Inc. Dual damascene process using self-assembled monolayer and spacers
WO2002071151A1 (en) * 2001-03-06 2002-09-12 Lee T Randall Dithiocarboxylic acid self-assembled monolayers and methods for using same in microconact printing
US6773616B1 (en) * 2001-11-13 2004-08-10 Hewlett-Packard Development Company, L.P. Formation of nanoscale wires
JP2005534190A (en) * 2002-07-26 2005-11-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Micro contact printing method
TW564383B (en) * 2002-10-17 2003-12-01 Chi Mei Optoelectronics Corp A liquid crystal display comprises color filters with recess structures
US7182996B2 (en) * 2002-11-22 2007-02-27 Florida State University Research Foundation, Inc. Deposting nanowires on a substrate
US6893966B2 (en) * 2002-11-27 2005-05-17 International Business Machines Corporation Method of patterning the surface of an article using positive microcontact printing
US6860956B2 (en) * 2003-05-23 2005-03-01 Agency For Science, Technology & Research Methods of creating patterns on substrates and articles of manufacture resulting therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459467B (en) * 2007-09-26 2014-11-01 Eastman Kodak Co Organosiloxane materials for selective area deposition of inorganic materials

Also Published As

Publication number Publication date
WO2006067694A3 (en) 2006-10-05
KR20070086446A (en) 2007-08-27
EP1831764A2 (en) 2007-09-12
JP2008525204A (en) 2008-07-17
CN101088044A (en) 2007-12-12
US20090272715A1 (en) 2009-11-05
WO2006067694A2 (en) 2006-06-29

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